Memory having a plurality of memory cells and a plurality of word lines.

Memory having a plurality of memory cells and a plurality of word lines

Номер патента: US09799412B2
Опубликовано: 24-10-2017
Автор(ы): Makoto Kitagawa, Yogesh Luthra
Принадлежит: Sony Semiconductor Solutions Corp
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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