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Manufacturing method of memory device

Номер патента: US10020253B2
Опубликовано: 10-07-2018
Автор(ы): Shu-Mei Lee
Принадлежит: Winbond Electronics Corp
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Номер патента: US20180233512A1. Автор: Jan Van Houdt,Pieter Blomme. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2018-08-16.

Method of manufacturing memory device having active area in strip

Номер патента: US20230284441A1. Автор: Liang-Pin Chou. Владелец: Nanya Technology Corp. Дата публикации: 2023-09-07.

Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device

Номер патента: US20070114615A1. Автор: Chandra Mouli. Владелец: Individual. Дата публикации: 2007-05-24.

Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device

Номер патента: US20070148930A1. Автор: Chandra Mouli. Владелец: Individual. Дата публикации: 2007-06-28.

Method of manufacturing memory device having active area in elongated block

Номер патента: US20230360959A1. Автор: Cheng-Ling Yang. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-09.

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Номер патента: US20230360958A1. Автор: Cheng-Ling Yang. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-09.

Method of manufacturing conductive pattern of a semiconductor device and method of manufacturing flash memory device using the same

Номер патента: KR100483843B1. Автор: 이창엽,권철순,이돈우. Владелец: 삼성전자주식회사. Дата публикации: 2005-04-19.

Memory devices and methods of forming the same

Номер патента: US11903334B2. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Jer-Fu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Method of fabricating semiconductor devices using a two-step gap-fill process

Номер патента: US11063218B2. Автор: Jaeho Jung,Jonguk KIM,Youngmin KO,Kwangmin Park,Dongsung Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-13.

Methods of forming memory devices

Номер патента: US20230389454A1. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Jer-Fu Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Methods of fabricating memory devices

Номер патента: US20180122811A1. Автор: Daeik Kim,Bong-Soo Kim,Yoosang Hwang,Chan-Sic Yoon,Kiseok LEE,Jemin PARK,Keunnam Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-03.

Three-dimensional memory device including replacement insulating layers and methods of forming the same

Номер патента: US20230354608A1. Автор: Fei Zhou,Raghuveer S. Makala,Masanori Tsutsumi,Noriyuki NAGAHATA. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-02.

Method Of Forming Split Gate Memory Cells With 5 Volt Logic Devices

Номер патента: US20160359024A1. Автор: Nhan Do,Vipin Tiwari. Владелец: Silicon Storage Technology Inc. Дата публикации: 2016-12-08.

Manufacturing method of memory device

Номер патента: US09842855B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2017-12-12.

Manufacturing method of memory device

Номер патента: US20170309636A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2017-10-26.

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Номер патента: US20220352202A1. Автор: LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2022-11-03.

Method of forming memory device

Номер патента: US11637017B2. Автор: Shih Hsi Chen,Wen Chung Yang,Wei-Chang Lin. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2023-04-25.

Method of forming memory device

Номер патента: US20220336621A1. Автор: Shih Hsi Chen,Wen Chung Yang,Wei-Chang Lin. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2022-10-20.

Memory device and method of forming the same

Номер патента: US20220037503A1. Автор: Shih Hsi Chen,Wen Chung Yang,Wei-Chang Lin. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2022-02-03.

Method of manufacturing memory device

Номер патента: US20180350608A1. Автор: Lu-Ping chiang,Chun-Hsu Chen,Chung-Hsien Liu. Владелец: Winbond Electronics Corp. Дата публикации: 2018-12-06.

Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening

Номер патента: US20240237346A1. Автор: Bing Zhou,Fei Zhou,Raghuveer S. Makala,Rahul Sharangpani,Senaka Kanakamedala,Adarsh RAJASHEKHAR,Kartik SONDHI,Roshan Jayakhar TIRUKKONDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-11.

Non-volatile memory device and manufacturing method thereof

Номер патента: US12089419B2. Автор: Chia-Chang Hsu,Cheng-Yi Lin,Chia-hung Lin,Tang Chun Weng,Yung Shen Chen. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-10.

Semiconductor memory device and manufacturing method thereof

Номер патента: US11925028B2. Автор: Jae Taek Kim,Hye Yeong JUNG. Владелец: SK hynix Inc. Дата публикации: 2024-03-05.

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Номер патента: US20240130134A1. Автор: Jae Taek Kim,Hye Yeong JUNG. Владелец: SK hynix Inc. Дата публикации: 2024-04-18.

Non-volatile memory device and manufacturing method thereof

Номер патента: US20230262993A1. Автор: Chia-Chang Hsu,Cheng-Yi Lin,Chia-hung Lin,Tang Chun Weng,Yung Shen Chen. Владелец: United Microelectronics Corp. Дата публикации: 2023-08-17.

Semiconductor device and manufacturing method thereof

Номер патента: US20240008287A1. Автор: Hai-Ching Chen,Chung-Te Lin,Wei-Chih Wen,Yu-Ming Lin,Kai-Wen Cheng,Po-Ting Lin,Wu-Wei Tsai,Yan-Yi Chen,Yu-Ming Hsiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-04.

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Номер патента: US20210028104A1. Автор: Lee Jin Won,LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2021-01-28.

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Номер патента: US20220068807A1. Автор: Lee Jin Won,LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2022-03-03.

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Номер патента: US20210174839A1. Автор: LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2021-06-10.

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20210217769A1. Автор: LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2021-07-15.

Memory device package having scribe line and method for manufacturing the same

Номер патента: US20240170412A1. Автор: Wu-Der Yang. Владелец: Nanya Technology Corp. Дата публикации: 2024-05-23.

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Номер патента: US20240170410A1. Автор: Wu-Der Yang. Владелец: Nanya Technology Corp. Дата публикации: 2024-05-23.

Semiconductor memory device and manufacturing method of semiconductor memory device

Номер патента: US20230380160A1. Автор: Kun Young Lee. Владелец: SK hynix Inc. Дата публикации: 2023-11-23.

Manufacturing method of sram device

Номер патента: US20230014829A1. Автор: Shou-Zen Chang,Jia-you LIN,Yi-Hsung Wei,Pei-Hsiu Tseng. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2023-01-19.

Manufacturing method of SRAM device

Номер патента: US11917804B2. Автор: Shou-Zen Chang,Jia-you LIN,Yi-Hsung Wei,Pei-Hsiu Tseng. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2024-02-27.

Memory device and method of fabricating the same

Номер патента: US09608040B2. Автор: Inho Kim,Jongchul Park,Jung-Ik Oh,Jong-Kyu Kim,Gwang-Hyun Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-28.

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Номер патента: US20220068963A1. Автор: LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2022-03-03.

FERROELECTRIC MEMORY DEVICE, MANUFACTURING METHOD OF THE FERROELECTRIC MEMORY DEVICE AND SEMICONDUCTOR CHIP

Номер патента: US20220285396A1. Автор: Lin Yu-Ming,CHEN Hai-Ching,LIN Chung-Te,Huang Rainer,Yen-Chieh. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2022-09-08.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US20230129734A1. Автор: Dong Won Choi,Kyung Min Park,Jun Hyuk Park,Sung Gon Jin. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

Ferroelectric-based memory device and method of forming the same

Номер патента: US20230389324A1. Автор: Harry-Hak-Lay Chuang,Kuo-Chi Tu,Kuo-Ching Huang,Yu-Wei Ting,Yi-Hsuan Chen,Kuen-Yi Chen,Yi Ching Ong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Semiconductor memory device and method of manufacturing semiconductor memory device and method of layouting auxiliary pattern

Номер патента: US09455271B1. Автор: Yuji Setta. Владелец: Toshiba Corp. Дата публикации: 2016-09-27.

Non-volatile semiconductor memory device, and manufacture method for non-volatile semiconductor memory device

Номер патента: US20100001338A1. Автор: Kenichiro Nakagawa. Владелец: NEC Electronics Corp. Дата публикации: 2010-01-07.

Methods of forming semiconductor memory devices

Номер патента: US20150037949A1. Автор: Jaegoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-02-05.

Methods of forming semiconductor memory devices

Номер патента: US09305933B2. Автор: Jaegoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-05.

Manufacturing method of a semiconductor memory device

Номер патента: US11705402B2. Автор: Tae Kyung Kim,Kun Young Lee. Владелец: SK hynix Inc. Дата публикации: 2023-07-18.

Manufacturing method of a semiconductor memory device

Номер патента: US11996370B2. Автор: Tae Kyung Kim,Kun Young Lee. Владелец: SK hynix Inc. Дата публикации: 2024-05-28.

Manufacturing method of a semiconductor memory device

Номер патента: US20200350258A1. Автор: Tae Kyung Kim,Kun Young Lee. Владелец: SK hynix Inc. Дата публикации: 2020-11-05.

Manufacturing method of a semiconductor memory device

Номер патента: US20230260928A1. Автор: Tae Kyung Kim,Kun Young Lee. Владелец: SK hynix Inc. Дата публикации: 2023-08-17.

Manufacturing method of a semiconductor memory device

Номер патента: US20220230966A1. Автор: Tae Kyung Kim,Kun Young Lee. Владелец: SK hynix Inc. Дата публикации: 2022-07-21.

Manufacturing method of a semiconductor memory device

Номер патента: US11309256B2. Автор: Tae Kyung Kim,Kun Young Lee. Владелец: SK hynix Inc. Дата публикации: 2022-04-19.

Method of Manufacturing Flash Memory Device

Номер патента: US20100112799A1. Автор: Hee Don Jeong. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-05-06.

Methods of fabricating ferroelectric memory devices

Номер патента: US20190019683A1. Автор: Hyangkeun YOO. Владелец: SK hynix Inc. Дата публикации: 2019-01-17.

Stacked memory device, optical proximity correction (opc) verifying method, method of designing layout of stacked memory device, and method of manufacturing stacked memory device

Номер патента: US20170250195A1. Автор: Sung-Hoon Kim,Hyang-Ja Yang,Chang-Bum Kim,Woo-Joung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-31.

Method of forming nonvolatile memory device

Номер патента: US20100248457A1. Автор: Jin Gyun Kim,Soodoo Chae,Seungmok Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-09-30.

Sputtering apparatus and method of fabricating magnetic memory device using the same

Номер патента: US11834738B2. Автор: Jeong-Heon Park,Junho Jeong,JoonMyoung LEE,Eunsun Noh,Whankyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-05.

Sputtering apparatus and method of fabricating magnetic memory device using the same

Номер патента: US20210079517A1. Автор: Jeong-Heon Park,Junho Jeong,JoonMyoung LEE,Eunsun Noh,Whankyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-18.

Method of fabricating a memory device with a multilayer insulating film

Номер патента: US5384276A. Автор: Masanori Fukumoto,Hisashi Ogawa,Yutaka Nabeshima. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1995-01-24.

Methods of forming programmable memory devices

Номер патента: US20060252207A1. Автор: Kevin Beaman,Ronald Weimer. Владелец: Individual. Дата публикации: 2006-11-09.

Method of manufacturing semiconductor memory device

Номер патента: US20210043642A1. Автор: Yu-Kai Liao,Chiang-Hung Chen,Wen Hung. Владелец: Winbond Electronics Corp. Дата публикации: 2021-02-11.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20210296327A1. Автор: Tomoya INDEN. Владелец: Kioxia Corp. Дата публикации: 2021-09-23.

Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices

Номер патента: US09852795B2. Автор: Dong-ku Kang,Joon-Suc JANG,Sang-Yong Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-26.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US12048155B2. Автор: Eun Seok Choi,Seo Hyun Kim,Dong Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2024-07-23.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US20240341098A1. Автор: Eun Seok Choi,Seo Hyun Kim,Dong Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2024-10-10.

Resistive memory device and method of operating resistive memory device

Номер патента: US09450025B2. Автор: Jung-Dal Choi,Seung-Jae Jung,Youn-Seon Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-20.

Methods of Forming Nonvolatile Memory Devices Having Vertically Integrated Nonvolatile Memory Cell Sub-Strings Therein and Nonvolatile Memory Devices Formed Thereby

Номер патента: US20120003800A1. Автор: Kihyun Kim,Changhyun LEE,Hansoo Kim,Sunil Shim,Jaehoon Jang,Sunghoi Hur. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-01-05.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US20230320086A1. Автор: Sang Soo Kim,Kun Young Lee,Sang Wan JIN. Владелец: SK hynix Inc. Дата публикации: 2023-10-05.

Memory device including multiple memory chips and data signal lines and a method of operating the memory device

Номер патента: US11810638B2. Автор: ChiWeon Yoon,Byunghoon Jeong,Youngmin Jo,Seonkyoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-07.

Method of reducing reliability degradation of nonvolatile memory device, nonvolatile memory device using the same and method of testing nonvolatile memory device using the same

Номер патента: US11915770B2. Автор: Minseok Kim,Junyong PARK,Ilhan Park,Doohyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-27.

Method of Operating Semiconductor Memory Device with Floating Body Transistor Using Silicon Controlled Rectifier Principle

Номер патента: US20210257365A1. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2021-08-19.

Method of operating semiconductor memory device with floating body transisor using silicon controlled rectifier principle

Номер патента: US09960166B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2018-05-01.

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

Номер патента: US09761589B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2017-09-12.

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

Номер патента: US09484082B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2016-11-01.

Resistive memory device and manufacturing method of the resistive memory device

Номер патента: US20230240157A1. Автор: In Ku Kang. Владелец: SK hynix Inc. Дата публикации: 2023-07-27.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US11903208B2. Автор: Nam Jae LEE,Nam Kuk KIM. Владелец: SK hynix Inc. Дата публикации: 2024-02-13.

Method of forming semiconductor memory device

Номер патента: US20230389340A1. Автор: Wei-Chih Wen,Han-Jong Chia,Yu-Wei Jiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Semiconductor memory device and manufacturing method of a semiconductor memory device

Номер патента: US20230328983A1. Автор: Hyo Sub YEOM. Владелец: SK hynix Inc. Дата публикации: 2023-10-12.

Semiconductor memory cell, semiconductor memory device, and method of manufacturing semiconductor memory device

Номер патента: US09865693B1. Автор: Wang Xiang,Weichang Liu,Zhen Chen,Shen-De Wang,Wei Ta. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-09.

Magnetic memory device and method of manufacturing magnetic memory device

Номер патента: US09698338B2. Автор: Masatoshi Yoshikawa,Satoshi Seto,Kazuhiro Tomioka,Shuichi TSUBATA. Владелец: Toshiba Corp. Дата публикации: 2017-07-04.

Method of manufacturing flash memory device

Номер патента: US20060237772A1. Автор: Hee Gee Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-10-26.

Nonvolatile memory devices, memory systems and methods of operating nonvolatile memory devices for processing user data

Номер патента: US10672479B2. Автор: Chan-Ik Park,Sang-Hoan Chang,Taek-Soo Kim,Hyun-Sung Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-02.

Nonvolatile semiconductor memory device, semiconductor device and manufactoring method of nonvolatile semiconductor memory device

Номер патента: US20100171169A1. Автор: Isao Kamioka,Yoshio Ozawa,Daisuke Matsushita,Yuuichiro Mitani,Ryuji Ooba. Владелец: Toshiba Corp. Дата публикации: 2010-07-08.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20220050748A1. Автор: Junhyung Kim,Sungchul Park,Yesin RYU,Kiheung KIM,HyunGi Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-17.

Method of manufacturing semiconductor memory device having charge accumulation layer positioned between control gate electrode and semiconductor layer

Номер патента: US09793290B2. Автор: Takuo Ohashi,Fumiki Aiso. Владелец: Toshiba Memory Corp. Дата публикации: 2017-10-17.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US12150305B2. Автор: Hyo Sub YEOM. Владелец: SK hynix Inc. Дата публикации: 2024-11-19.

Methods of manufacturing magnetic memory device having a magnetic tunnel junction pattern

Номер патента: US09647033B2. Автор: Jun Ho Park,Hye Min Shin,Dae Eun JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-09.

Resistive memory device and manufacturing method of the resistive memory device

Номер патента: US20230240084A1. Автор: In Ku Kang. Владелец: SK hynix Inc. Дата публикации: 2023-07-27.

Method of Manufacturing flash memory device

Номер патента: US20080081451A1. Автор: Se Hoon Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-04-03.

Method of manufacturing ferroelectric memory device

Номер патента: US20020098599A1. Автор: Takashi Nakamura,Hidemi Takasu. Владелец: Individual. Дата публикации: 2002-07-25.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US11469242B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2022-10-11.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US20220415918A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2022-12-29.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US20210036002A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2021-02-04.

Method of forming a memory device structure and memory device structure

Номер патента: US20170117322A1. Автор: Ran Yan,Ralf Richter,Yu-Teh Chiang. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-27.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20210191809A1. Автор: Kijun Lee,Yeonggeol Song,Sungrae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-24.

Methods of Forming Resistive Memory Devices

Номер патента: US20100233849A1. Автор: Hyun-Jun Sim,Jang Eun Lee,Jun-Ho Jeong,Se-Chung Oh,Kyung-Tae Nam,Dae-Kyom Kim. Владелец: Individual. Дата публикации: 2010-09-16.

Method of forming a memory device structure and memory device structure

Номер патента: US09614003B1. Автор: Ran Yan,Ralf Richter,Yu-Teh Chiang. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-04.

Magnetoresistive memory device and method of manufacturing magnetoresistive memory device

Номер патента: US20200294566A1. Автор: Shuichi TSUBATA. Владелец: Toshiba Memory Corp. Дата публикации: 2020-09-17.

Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

Номер патента: US12114577B2. Автор: Taichi IGARASHI. Владелец: Kioxia Corp. Дата публикации: 2024-10-08.

Method of fabricating switching element and method of manufacturing resistive memory device

Номер патента: US20170352807A1. Автор: Tae Jung Ha. Владелец: SK hynix Inc. Дата публикации: 2017-12-07.

Method of fabricating switching element and method of manufacturing resistive memory device

Номер патента: US09960350B2. Автор: Tae Jung Ha. Владелец: SK hynix Inc. Дата публикации: 2018-05-01.

Methods of forming a layer and methods of manufacturing magnetic memory devices using the same

Номер патента: US09660187B1. Автор: Juhyun Kim,Ki Woong Kim,Yong Sung Park,Sechung Oh,JoonMyoung LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-23.

Method of Operating Semiconductor Memory Device with Floating Body Transistor Using Silicon Controlled Rectifier Principle

Номер патента: US20230413511A1. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2023-12-21.

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

Номер патента: US11785758B2. Автор: Yuniarto Widjaja. Владелец: Zeno Semiconductor Inc. Дата публикации: 2023-10-10.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US11437388B2. Автор: Kosei Noda,Go Oike. Владелец: Kioxia Corp. Дата публикации: 2022-09-06.

Method of manufacturing flash memory device

Номер патента: US20060141718A1. Автор: Seok Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-06-29.

Nonvolatile memory devices, methods of manufacturing nonvolatile memory device, and electronic systems including nonvolatile memory device

Номер патента: US20230335520A1. Автор: Seo Jin Park,Eun-ji Kim,Yoon Jo HWANG,Jun Seok BANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-19.

Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

Номер патента: US20220093146A1. Автор: Naoki Akiyama,Kenichi Yoshino,Gayoung Ha. Владелец: Kioxia Corp. Дата публикации: 2022-03-24.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US11594545B2. Автор: Fumie KIKUSHIMA. Владелец: Kioxia Corp. Дата публикации: 2023-02-28.

Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device

Номер патента: US8248837B2. Автор: Kentaro Kinoshita. Владелец: Fujitsu Ltd. Дата публикации: 2012-08-21.

Magnetoresistive memory device and method of manufacturing magnetoresistive memory device

Номер патента: US20210074762A1. Автор: Shuichi TSUBATA. Владелец: Kioxia Corp. Дата публикации: 2021-03-11.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20210091094A1. Автор: Fumie KIKUSHIMA. Владелец: Kioxia Corp. Дата публикации: 2021-03-25.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20200286910A1. Автор: Takayuki Kashima. Владелец: Toshiba Memory Corp. Дата публикации: 2020-09-10.

Method of manufacturing semiconductor memory device

Номер патента: US4818718A. Автор: Kazuhiro Komori,Yasunobu Kosa. Владелец: HITACHI LTD. Дата публикации: 1989-04-04.

Fabrication method of three-dimensional memory device

Номер патента: US20230064048A1. Автор: Kun Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-03-02.

Method of manufacturing semiconductor memory device

Номер патента: US20080280415A1. Автор: Kazuhiko Kajigaya. Владелец: Elpida Memory Inc. Дата публикации: 2008-11-13.

Method of manufacturing magnetoresistive memory device

Номер патента: US20170263860A1. Автор: Minoru Amano,Satoshi Seto. Владелец: Toshiba Corp. Дата публикации: 2017-09-14.

Method of manufacturing flash memory device

Номер патента: US20050009274A1. Автор: Cha Dong. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-01-13.

Method of operating resistive memory device to increase read margin

Номер патента: US20200118626A1. Автор: Kwang-Woo LEE,Kyu-Rie SIM,Han-bin Noh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-16.

Magnetic memory device and method of writing magnetic memory device

Номер патента: US20180151212A1. Автор: Seung-jae Lee,Kyung-Jin Lee,Woo Chang Lim,Gyungchoon GO. Владелец: Individual. Дата публикации: 2018-05-31.

Method of fabricating semiconductor memory device

Номер патента: US20230217649A1. Автор: Yuna Lee,Chanmi LEE,Jungpyo Hong,Sangwuk PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-06.

Method of manufacturing semiconductor memory devices

Номер патента: US20230276614A1. Автор: Joongchan SHIN,Taegyu Kang,Seokho Shin,Byeungmoo KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-31.

Method of Manufacturing Flash Memory Device

Номер патента: US20090142861A1. Автор: Yong Wook Shin. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2009-06-04.

Methods of manufacturing vertical memory devices

Номер патента: US10453859B2. Автор: Kohji Kanamori,Young-woo Park,Jung-Hoon Park,Shin-Hwan Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-10-22.

Method of manufacturing semiconductor memory device

Номер патента: US5858837A. Автор: Ichiro Honma,Takashi Sakoh. Владелец: NEC Corp. Дата публикации: 1999-01-12.

Method of forming semiconductor memory device by selectively forming an insulating film on the drain region

Номер патента: US5629222A. Автор: Shunpei Yamazaki,Yasuhiko Takemura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1997-05-13.

Method of fabricating magnetic memory device

Номер патента: US20220020918A1. Автор: Geeng-Chuan Chern. Владелец: HeFeChip Corp Ltd. Дата публикации: 2022-01-20.

Methods of manufacturing semiconductor memory devices

Номер патента: US20100184282A1. Автор: Albert Fayrushin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-07-22.

Nonvolatile memory device having resistance change layer and method of operating nonvolatile memory device

Номер патента: US20210202835A1. Автор: Se Ho LEE,Hyangkeun YOO,Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2021-07-01.

Method of fabricating semiconductor memory device

Номер патента: US20130237028A1. Автор: Hironobu FURUHASHI. Владелец: Individual. Дата публикации: 2013-09-12.

Method of manufacturing a memory device comprising introducing a dopant into silicon oxide

Номер патента: US11991939B2. Автор: Yoshinori Kumura. Владелец: Kioxia Corp. Дата публикации: 2024-05-21.

Method of forming ferroelectric memory device

Номер патента: US20230363173A1. Автор: Tsann Lin,Chung-Te Lin,Han-Ting Tsai,Kuo-Chang Chiang,Min-Kun Dai,Rainer Yen-Chieh Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US11417674B2. Автор: Yuichiro Mitani,Harumi SEKI. Владелец: Kioxia Corp. Дата публикации: 2022-08-16.

Methods of operating a memory device

Номер патента: US10424583B2. Автор: Tieh-Chiang Wu. Владелец: Micron Technology Inc. Дата публикации: 2019-09-24.

Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

Номер патента: US20220085278A1. Автор: Taichi IGARASHI. Владелец: Kioxia Corp. Дата публикации: 2022-03-17.

Memory device including memory chip and peripheral memory chip and method of manufacturing the memory device

Номер патента: US11721655B2. Автор: Chanho Kim,Daeseok Byeon,Jooyong PARK,Pansuk Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-08.

Magnetoresistive memory device and method of manufacturing magnetoresistive memory device

Номер патента: US20220028441A1. Автор: Shuichi TSUBATA. Владелец: Toshiba Memory Corp. Дата публикации: 2022-01-27.

Memory device including memory chip and peripheral memory chip and method of manufacturing the memory device

Номер патента: EP4002373A1. Автор: Chanho Kim,Daeseok Byeon,Jooyong PARK,Pansuk Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-25.

Memory device including memory chip and peripheral memory chip and method of manufacturing the memory device

Номер патента: US20230317655A1. Автор: Chanho Kim,Daeseok Byeon,Jooyong PARK,Pansuk Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-05.

MANUFACTURING METHOD OF A SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20200350258A1. Автор: KIM Tae Kyung,LEE Kun Young. Владелец: SK HYNIX INC.. Дата публикации: 2020-11-05.

Manufacturing method of semiconductor memory device

Номер патента: US09935116B2. Автор: Masaru Yano,Pin-Yao Wang. Владелец: Winbond Electronics Corp. Дата публикации: 2018-04-03.

Manufacturing method of semiconductor memory device

Номер патента: US09768184B2. Автор: Masaru Yano,Pin-Yao Wang. Владелец: Winbond Electronics Corp. Дата публикации: 2017-09-19.

Manufacturing method of semiconductor memory device

Номер патента: US20180269223A1. Автор: Takashi Ohashi,Kazunori HORIGUCHI. Владелец: Toshiba Memory Corp. Дата публикации: 2018-09-20.

Semiconductor memory devices and manufacturing methods thereof

Номер патента: US09443734B2. Автор: Jung-Hwan Park,Kyu-Hyun Lee,Ki-Seok Lee,Hyo-Jin Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-13.

Etching method and manufacturing method of a semiconductor memory device

Номер патента: US20240321570A1. Автор: Tsubasa IMAMURA,Ayata Harayama. Владелец: Kioxia Corp. Дата публикации: 2024-09-26.

A three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

Номер патента: EP3286785A1. Автор: Zhenyu Lu,Daxin Mao,Koji Miyata,Johann Alsmeier,Andrew Lin,George Matamis,Jixin Yu,Wenguang Shi,Junichi Ariyoshi,Xiaolong Hu,Jiyin Xu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-02-28.

Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

Номер патента: US09449987B1. Автор: Zhenyu Lu,Daxin Mao,Koji Miyata,Johann Alsmeier,Andrew Lin,Jixin Yu,Wenguang Stephen Shi. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-20.

Manufacturing method of semiconductor memory device

Номер патента: US20180190659A1. Автор: Feng-Yi Chang,Shih-Fang Tzou,Chien-Ting Ho,Fu-Che Lee. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-07-05.

Memory device and method of manufacturing the same

Номер патента: US11770938B2. Автор: Soon-Oh Park,Dong-Jun Seong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-26.

Memory device and method of manufacturing the same

Номер патента: US09780144B2. Автор: Soon-Oh Park,Dong-Jun Seong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-03.

Manufacturing method of semiconductor memory device

Номер патента: US8105907B2. Автор: Shigeru Shiratake,Takeshi Ohgami,Eiji Hasunuma. Владелец: Elpida Memory Inc. Дата публикации: 2012-01-31.

Manufacturing method for a floating gate semiconductor memory device by forming cell slits

Номер патента: US5219775A. Автор: Kenji Toyoda,Osamu Matsumoto,Masayuki Yoshida,Yukihiro Saeki,Teruo Uemura,Tomohisa Shigematsu,Hiroyuki Takamura,Takahide Mizutani,Nobuyoshi Chida. Владелец: Toshiba Corp. Дата публикации: 1993-06-15.

3D Stackable Memory and Methods of Manufacture

Номер патента: US20240268128A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Memory device

Номер патента: US09922713B2. Автор: Leroy Cronin,Asen ASENOV. Владелец: University of Glasgow. Дата публикации: 2018-03-20.

Memory devices including vertical memory cells and related methods

Номер патента: US20190067326A1. Автор: Haitao Liu,Chandra V. Mouli,Srinivas Pulugurtha,Guangyu Huang. Владелец: Micron Technology Inc. Дата публикации: 2019-02-28.

Nonvolatile nand-type memory devices including charge storage layers connected to insulating layers

Номер патента: US20100128531A1. Автор: Changhyun LEE,Jungdal CHOI,Yoocheol Shin,Yongsik Yim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-05-27.

Memory device

Номер патента: US09735014B2. Автор: Joon Hee Lee,Won Seok Jung,Keon Soo Kim,Sun Yeong LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-15.

Method of making damascene select gate in memory device

Номер патента: US09443867B2. Автор: Shingo OHSAKI. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-13.

Method of fabricating memory device

Номер патента: US09748261B2. Автор: Young-woo Park,Jae-Goo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Method of forming self-aligned split-gate memory cell array with metal gates and logic devices

Номер патента: US09721958B2. Автор: FENG Zhou,Chun-Ming Chen,Nhan Do,Jeng-Wei Yang,Man-Tang Wu,Xian Liu,Chien-Sheng Su. Владелец: Silicon Storage Technology Inc. Дата публикации: 2017-08-01.

Method of integrating a charge-trapping gate stack into a CMOS flow

Номер патента: US9196496B2. Автор: Krishnaswamy Ramkumar. Владелец: Cypress Semiconductor Corp. Дата публикации: 2015-11-24.

Method of integrating a charge-trapping gate stack into a cmos flow

Номер патента: US20160099253A1. Автор: Krishnaswamy Ramkumar. Владелец: Cypress Semiconductor Corp. Дата публикации: 2016-04-07.

Method of integrating a charge-trapping gate stack into a cmos flow

Номер патента: US20190067313A1. Автор: Krishnaswamy Ramkumar. Владелец: Cypress Semiconductor Corp. Дата публикации: 2019-02-28.

Method of integrating a charge-trapping gate stack into a cmos flow

Номер патента: US20140235046A1. Автор: Krishnaswamy Ramkumar. Владелец: Cypress Semiconductor Corp. Дата публикации: 2014-08-21.

Method of fabricating a charge-trapping gate stack using a cmos process flow

Номер патента: US20170084465A1. Автор: Krishnaswamy Ramkumar,Hui-Mei Shih. Владелец: Cypress Semiconductor Corp. Дата публикации: 2017-03-23.

Method of fabricating a charge-trapping gate stack using a CMOS process flow

Номер патента: US09911613B2. Автор: Krishnaswamy Ramkumar,Hui-Mei Shih. Владелец: Cypress Semiconductor Corp. Дата публикации: 2018-03-06.

Semiconductor device and method of forming the same

Номер патента: US09812327B2. Автор: Shih-Yin Hsiao,Kun-Huang Yu. Владелец: United Microelectronics Corp. Дата публикации: 2017-11-07.

Method of fabricating a charge-trapping gate stack using a CMOS process flow

Номер патента: US09496144B2. Автор: Krishnaswamy Ramkumar,Hui-Mei Shih. Владелец: Cypress Semiconductor Corp. Дата публикации: 2016-11-15.

Method of forming low height split gate memory cells

Номер патента: US09972493B2. Автор: Hieu Van Tran,Chun-Ming Chen,Nhan Do,Jeng-Wei Yang,Man-Tang Wu,Chien-Sheng Su. Владелец: Silicon Storage Technology Inc. Дата публикации: 2018-05-15.

Method of forming controllably conductive oxide

Номер патента: US09461247B2. Автор: Seungmoo Choi,Matthew Buynoski,Christie Marrian,Dongxiang Liao,Chakravarthy Gopalan. Владелец: Cypress Semiconductor Corp. Дата публикации: 2016-10-04.

Method Of Forming Split-Gate Flash Memory Cell With Spacer Defined Floating Gate And Discretely Formed Polysilicon Gates

Номер патента: US20210005724A1. Автор: Chunming Wang,Nhan Do,Xian Liu,Leo XING,Melvin DIAO,Guo Yong LIU. Владелец: Silicon Storage Technology Inc. Дата публикации: 2021-01-07.

Method of forming split gate memory cells with thinned tunnel oxide

Номер патента: EP4101003A1. Автор: Jinho Kim,Nhan Do,Catherine Decobert,Parviz Ghazavi,Yuri Tkachev,Bruno Villard,Elizabeth Cuevas,Bernard Bertello,Gilles Festes. Владелец: Silicon Storage Technology Inc. Дата публикации: 2022-12-14.

Method of forming split gate memory cells with thinned tunnel oxide

Номер патента: WO2021158257A1. Автор: Jinho Kim,Nhan Do,Catherine Decobert,Parviz Ghazavi,Yuri Tkachev,Bruno Villard,Elizabeth Cuevas,Bernard Bertello,Gilles Festes. Владелец: Silicon Storage Technology, Inc.. Дата публикации: 2021-08-12.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: KR101169397B1. Автор: 김종섭,이성훈,박성일,진영구,홍기하. Владелец: 삼성전자주식회사. Дата публикации: 2012-07-30.

Manufacture method of three dimensional memory device

Номер патента: KR101914038B1. Автор: 황현상. Владелец: 주식회사 에이치피에스피. Дата публикации: 2018-11-01.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP2713115B2. Автор: 武 岡澤. Владелец: NEC Corp. Дата публикации: 1998-02-16.

Manufacturing method of non-volatile memory devices

Номер патента: KR0150047B1. Автор: 장희현. Владелец: 김주용. Дата публикации: 1998-10-01.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3399186B2. Автор: 明弘 中村. Владелец: Sony Corp. Дата публикации: 2003-04-21.

Memory device etch methods

Номер патента: US20100120239A1. Автор: Angela T. Hui,Jihwan Choi. Владелец: Advanced Micro Devices Inc. Дата публикации: 2010-05-13.

MANUFACTURING METHOD AND STRUCTURE OF SEMICONDUCTOR MEMORY DEVICES.

Номер патента: FR2591380B1. Автор: Hisao Hayashi. Владелец: Sony Corp. Дата публикации: 1991-10-11.

Method of manufaturing flash memory device

Номер патента: TW200901335A. Автор: Hyun-Ju Lim. Владелец: Dongbu Hitek Co Ltd. Дата публикации: 2009-01-01.

Method of fabricating flash memory device

Номер патента: TWI272698B. Автор: Seung-Cheol Lee,Pil-Geun Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-02-01.

Method of manufacturing flash memory device

Номер патента: TWI276207B. Автор: Seung-Cheol Lee,Sang-Wook Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-03-11.

Method of fabricating flash memory device

Номер патента: TW200633144A. Автор: Seung-Cheol Lee,Pil-Geun Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-09-16.

Memory device and methods of using and making the device

Номер патента: US20050006643A1. Автор: Zhida Lan,Colin Bill,Michael Van Buskirk. Владелец: Individual. Дата публикации: 2005-01-13.

Cost-effective method to form a reliable memory device with selective silicidation and resulting device

Номер патента: US20190148395A1. Автор: Soh Yun Siah. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2019-05-16.

Cost-effective method to form a reliable memory device with selective silicidation and resulting device

Номер патента: US20180301464A1. Автор: Soh Yun Siah. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2018-10-18.

3D Stackable Memory and Methods of Manufacture

Номер патента: US20230345741A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

3D stackable memory and methods of manufacture

Номер патента: US11991888B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Chih-Yu Chang,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Method of Improving Memory Cell Device by Ion Implantation

Номер патента: US20120329220A1. Автор: Ralf van Bentum,Nihar-Ranjan Mohapatra. Владелец: Globalfoundries Inc. Дата публикации: 2012-12-27.

Semiconductor memory devices

Номер патента: US20200219885A1. Автор: Satoru Yamada,Bong-Soo Kim,Yoosang Hwang,Junsoo Kim,Hui-jung Kim,Wonsok Lee,Min Hee Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-09.

Semiconductor memory devices

Номер патента: US11785761B2. Автор: Satoru Yamada,Bong-Soo Kim,Yoosang Hwang,Junsoo Kim,Hui-jung Kim,Wonsok Lee,Min Hee Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-10.

Method of manufacturing memory device using self-aligned double patterning (sadp)

Номер патента: US20240136185A1. Автор: Chih-Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2024-04-25.

Method of manufacturing memory device using self-aligned double patterning (sadp)

Номер патента: US20240136186A1. Автор: Chih-Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2024-04-25.

NROM device and method of making same

Номер патента: US20060079053A1. Автор: Bomy Chen,Dana Lee,Bing Yeh,Yaw Hu. Владелец: Individual. Дата публикации: 2006-04-13.

Stacked memory device, optical proximity correction (opc) verifying method, method of designing layout of stacked memory device, and method of manufacturing stacked memory device

Номер патента: US20170250195A1. Автор: Sung-Hoon Kim,Hyang-Ja Yang,Chang-Bum Kim,Woo-Joung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-31.

Method of fabricating memory device using a halogen implant

Номер патента: US5576226A. Автор: Hyun S. Hwang. Владелец: LG Semicon Co Ltd. Дата публикации: 1996-11-19.

Method of forming memory device

Номер патента: US20200105344A1. Автор: Wen-Ting Chu,Kuo-Chi Tu,Sheng-Hung SHIH,Chu-Jie HUANG,Nai-Chao Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-02.

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Номер патента: US20080211039A1. Автор: Xiaofeng Wang,Eun-ji Jung,In-Seok Yeo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-09-04.

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Номер патента: US11239415B2. Автор: Wei-Chuan Fang. Владелец: Nanya Technology Corp. Дата публикации: 2022-02-01.

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Номер патента: US20140035020A1. Автор: Kuo-Ching Huang,Yu-Wei Ting,Chih-Yang Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-02-06.

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Номер патента: US20150318292A1. Автор: Kuo-Ching Huang,Yu-Wei Ting,Chih-Yang Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-11-05.

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Номер патента: US20210288253A1. Автор: Yoshinori Kumura. Владелец: Kioxia Corp. Дата публикации: 2021-09-16.

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Номер патента: US20230108500A1. Автор: Yoshinori Kumura. Владелец: Kioxia Corp. Дата публикации: 2023-04-06.

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Номер патента: US7608488B2. Автор: Susumu Yoshikawa,Yasuyuki Baba. Владелец: Toshiba Corp. Дата публикации: 2009-10-27.

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Номер патента: US09881931B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2018-01-30.

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Номер патента: US9881931B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2018-01-30.

Memory devices including phase change material elements

Номер патента: US09748475B2. Автор: Jun Liu. Владелец: Ovonyx Memory Technology LLC. Дата публикации: 2017-08-29.

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Номер патента: US20240266339A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-08-08.

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Номер патента: US20240006471A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-01-04.

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Номер патента: US20180033492A1. Автор: Ji Hyun Seo. Владелец: SK hynix Inc. Дата публикации: 2018-02-01.

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Номер патента: US09972399B2. Автор: Ji Hyun Seo. Владелец: SK hynix Inc. Дата публикации: 2018-05-15.

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Номер патента: US20180261603A1. Автор: Li-Wei Feng,Ying-Chiao Wang,Wen-Chieh Lu,Chien-Ting Ho,Li-Wei Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-09-13.

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Номер патента: US09590174B2. Автор: Tadashi Kai,Katsuya Nishiyama,Yutaka Hashimoto,Masaru Toko,Kuniaki Sugiura. Владелец: Toshiba Corp. Дата публикации: 2017-03-07.

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Номер патента: US10074656B1. Автор: Li-Wei Feng,Ying-Chiao Wang,Wen-Chieh Lu,Chien-Ting Ho,Li-Wei Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-09-11.

Erase system and method of nonvolatile memory device

Номер патента: US09431115B2. Автор: Sang-Wan Nam. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-30.

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Номер патента: US09634064B2. Автор: Shigeki Kobayashi,Takeshi Yamaguchi,Masaki Yamato. Владелец: Toshiba Corp. Дата публикации: 2017-04-25.

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Номер патента: US20180350817A1. Автор: Li-Wei Feng,Ying-Chiao Wang,Wen-Chieh Lu,Chien-Ting Ho,Li-Wei Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-12-06.

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Номер патента: US20210066493A1. Автор: Kuo-Feng Huang,Yu-Chi Kuo,Che-Jui HSU,Ying-Fu Tung,Chun-Sheng Lu,Wang-Ta Li. Владелец: Winbond Electronics Corp. Дата публикации: 2021-03-04.

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Номер патента: US20230129701A1. Автор: Hyun Soo Shin,Sang Hyun Sung,Sung Lae OH. Владелец: SK hynix Inc. Дата публикации: 2023-04-27.

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Номер патента: US11289612B2. Автор: Lu-Ping chiang,Cheng-Ta Yang. Владелец: Winbond Electronics Corp. Дата публикации: 2022-03-29.

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Номер патента: US20240349499A1. Автор: Chung-Hsien Liu,Tzu-Yun Huang. Владелец: Winbond Electronics Corp. Дата публикации: 2024-10-17.

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Номер патента: US09728721B2. Автор: Eng Huat Toh,Shyue Seng Tan,Yuan Sun,Elgin Kiok Boone Quek,Xuan Anh TRAN. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-08-08.

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Номер патента: US20220302387A1. Автор: Michael B. Jeppson. Владелец: Micron Technology Inc. Дата публикации: 2022-09-22.

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Номер патента: US20230345727A1. Автор: Satoshi Shimizu,Senaka Kanakamedala,Takumi Moriyama,Nobuyuki Fujimura. Владелец: Western Digital Technologies Inc. Дата публикации: 2023-10-26.

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Номер патента: US11869582B2. Автор: Wontaeck Jung,Jiyoon PARK,Hyunjun Yoon,Sungwon YUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

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Номер патента: US20230051615A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-02-16.

Method for manufacturing semiconductor memory device and semiconductor memory device

Номер патента: US20160254319A1. Автор: Shigeki Kobayashi,Takeshi Yamaguchi,Masaki Yamato. Владелец: Toshiba Corp. Дата публикации: 2016-09-01.

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Номер патента: US20140326939A1. Автор: Shigeki Kobayashi,Takeshi Yamaguchi,Masaki Yamato. Владелец: Toshiba Corp. Дата публикации: 2014-11-06.

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Номер патента: US20150295174A1. Автор: Shigeki Kobayashi,Takeshi Yamaguchi,Masaki Yamato. Владелец: Toshiba Corp. Дата публикации: 2015-10-15.

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Номер патента: US12027511B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-07-02.

Memory device and electronic apparatus including the same

Номер патента: US09716129B1. Автор: Gwan-Hyeob Koh,Dae-Hwan Kang,Kyu-Rie SIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-25.

Semiconductor memory devices with diode-connected mos

Номер патента: US20240249784A1. Автор: Yih Wang,Perng-Fei Yuh,Chia-En HUANG,Tung-Cheng Chang,Chun-Ying Lee,Gu-Huan Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

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Номер патента: US20160104834A1. Автор: Tadashi Kai,Katsuya Nishiyama,Yutaka Hashimoto,Masaru Toko,Kuniaki Sugiura. Владелец: Individual. Дата публикации: 2016-04-14.

3-d dram structures and methods of manufacture

Номер патента: US20210249415A1. Автор: Nitin K. Ingle,Tomohiko Kitajima,Sung-Kwan Kang,Chang Seok Kang. Владелец: Applied Materials Inc. Дата публикации: 2021-08-12.

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Номер патента: US09455404B2. Автор: Chin-Tsan Yeh,Bing-Lung Yu. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-27.

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Номер патента: US20230154804A1. Автор: Jaeho Kim,Younghoon Sohn,Souk Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-18.

Nonvolatile memory device, a storage device having the same and an operating method of the same

Номер патента: US09460795B2. Автор: Donghun Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-04.

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Номер патента: US8389357B2. Автор: Ronald Kakoschke,Thomas Nirschl,Klaus Schrufer,Danny Shum. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2013-03-05.

Methods of fabricating memory devices

Номер патента: US9172039B2. Автор: Masayuki Terai,In-Gyu Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-27.

Nonvolatile memory device and program method of the same

Номер патента: US20180268907A1. Автор: Yong-Seok Kim,Byoung-taek Kim,Ji-Ho Cho,Won-Bo Shim,Sun-gyung HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-09-20.

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Номер патента: US20240188275A1. Автор: He Chen,Ziqun HUA. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-06.

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Номер патента: US20240196589A1. Автор: He Chen,Ziqun HUA,Hongbin Zhu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-13.

Method of fabricating memory

Номер патента: US7344938B2. Автор: Yider Wu,Jongoh Kim,Kent Kuohua Chang. Владелец: Macronix International Co Ltd. Дата публикации: 2008-03-18.

Method for fabricating a semiconductor memory device

Номер патента: US20030060002A1. Автор: Walter Hartner,Gerhard Enders,Rainer Bruchhaus,Volker Weinrich,Nicolas Nagel,Matthias Kronke,Thomas Mikolajick,Igor Kasko,Michael Rohner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-03-27.

High density memory device

Номер патента: US20120300534A1. Автор: Keith A. Jenkins,Tymon Barwicz,Supratik Guha. Владелец: International Business Machines Corp. Дата публикации: 2012-11-29.

Nonvolatile memory device and operation method thereof

Номер патента: US20230352104A1. Автор: Jung Woo Lee,Yang Kyu Choi,Ji Man YU. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-11-02.

Operation method of nonvolatile memory device

Номер патента: US20220130467A1. Автор: Ho-Jun Lee,Sang-Wan Nam,Jae-Duk Yu,Jonghoon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-28.

Method of forming split-gate memory cell array along with low and high voltage logic devices

Номер патента: US9496369B2. Автор: Chun-Ming Chen,Nhan Do,Jeng-Wei Yang,Man-Tang Wu,Chien-Sheng Su. Владелец: Silicon Storage Technology Inc. Дата публикации: 2016-11-15.

DESIGNING METHOD OF NON-VOLATILE MEMORY DEVICE, MANUFACTURING METHOD OF NON-VOLATILE MEMORY DEVICE, AND NON-VOLATILE MEMORY DEVICE

Номер патента: US20140146594A1. Автор: Hayakawa Yukio,TSUJI Kiyotaka,Yoneda Shinichi,Kawahara Akifumi. Владелец: Panasonic Corporation. Дата публикации: 2014-05-29.

Nonvolatile memory device and manufacturing method therefor

Номер патента: US20240040788A1. Автор: Kazuya Saito,Takeshi Masuda,Noriyuki Miyata,Kazumasa Horita,Shutaro Asanuma,Takehito Jinbo,Kyoko Sumita,Yuusuke Miyaguchi. Владелец: Ulvac Inc. Дата публикации: 2024-02-01.

Three-dimensional memory device with ferroelectric material

Номер патента: US20210375929A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Chi On Chui,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Three-dimensional memory device with ferroelectric material

Номер патента: US12101939B2. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Chi On Chui,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

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Номер патента: US20240365553A1. Автор: Chun-Chieh Lu,Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Chi On Chui,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

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Номер патента: US20240107746A1. Автор: Li-Ping Huang,Chao-Chun Lu,Wen-Hsien TU. Владелец: Invention and Collaboration Laboratory Pte Ltd. Дата публикации: 2024-03-28.

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Номер патента: US20240130130A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

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Номер патента: US20200058666A1. Автор: Chun-Min Cheng,Chien-Lan Chiu. Владелец: Macronix International Co Ltd. Дата публикации: 2020-02-20.

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Номер патента: US20200303556A1. Автор: Lu-Ping chiang,Cheng-Ta Yang. Владелец: Winbond Electronics Corp. Дата публикации: 2020-09-24.

Method of forming memory device with physical vapor deposition system

Номер патента: US12035538B2. Автор: Chin-Szu Lee,Yu-Jen Chien,I-Pin CHIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

Method of fabricating semiconductor memory device having enlarged cell contact area

Номер патента: US09859285B2. Автор: Kuo-Chen Wang. Владелец: Micron Technology Inc. Дата публикации: 2018-01-02.

Three-dimensional memory deivce, manufacturing method thereof, and memory system

Номер патента: US20240130129A1. Автор: Zhiliang Xia,Xiaoxin LIU,Jiayi Liu,Xiaolong Du,Tingting Gao,Changzhi Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-04-18.

Semiconductor wafer manufacturing method, method of manufacturing semiconductor energy beam detecting element, and semiconductor wafer

Номер патента: US20200411702A1. Автор: Kazuhisa Yamamura,Kazumasa Kosugi,Shintaro KAMADA. Владелец: Hamamatsu Photonics KK. Дата публикации: 2020-12-31.

Semiconductor wafer manufacturing method, method of manufacturing semiconductor energy beam detecting element, and semiconductor wafer

Номер патента: EP3680940A1. Автор: Kazuhisa Yamamura,Kazumasa Kosugi,Shintaro KAMADA. Владелец: Hamamatsu Photonics KK. Дата публикации: 2020-07-15.

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Номер патента: US20210028188A1. Автор: LEE Nam Jae,KIM Nam Kuk. Владелец: SK HYNIX INC.. Дата публикации: 2021-01-28.

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Номер патента: US20210036002A1. Автор: LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2021-02-04.

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Номер патента: US20210175242A1. Автор: KIM Jin Ha. Владелец: SK HYNIX INC.. Дата публикации: 2021-06-10.

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Номер патента: US20220310644A1. Автор: Lee Dong Hwan,CHOI Eun Seok,Kim Seo Hyun. Владелец: SK HYNIX INC.. Дата публикации: 2022-09-29.

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Номер патента: US20220310653A1. Автор: LEE Nam Jae,KIM Nam Kuk. Владелец: SK HYNIX INC.. Дата публикации: 2022-09-29.

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Номер патента: US20210358944A1. Автор: LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2021-11-18.

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Номер патента: US20220093641A1. Автор: WANG Qiguang. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-03-24.

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Номер патента: US20200411702A1. Автор: Yamamura Kazuhisa,KOSUGI Kazumasa,KAMADA Shintaro. Владелец: HAMAMATSU PHOTONICS K.K.. Дата публикации: 2020-12-31.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: KR100529649B1. Автор: 이상범. Владелец: 동부아남반도체 주식회사. Дата публикации: 2005-11-17.

Manufacturing method of non-volatile memory device

Номер патента: US9012294B2. Автор: Satoru Fujii,Takumi Mikawa,Haruyuki Sorada. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2015-04-21.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: KR950034731A. Автор: 이정형,최정혁. Владелец: 김광호. Дата публикации: 1995-12-28.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3397903B2. Автор: 雄吾 冨岡. Владелец: Nippon Steel Corp. Дата публикации: 2003-04-21.

Manufacturing method of nonvolatile semiconductor memory device provided with variable resistance element

Номер патента: JP4238248B2. Автор: 信夫 山崎. Владелец: Sharp Corp. Дата публикации: 2009-03-18.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3226589B2. Автор: 理一郎 白田,誠一 有留,哲郎 遠藤. Владелец: Toshiba Corp. Дата публикации: 2001-11-05.

Manufacturing method of a semiconductor memory device

Номер патента: KR20140076798A. Автор: 양영호. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2014-06-23.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3008854B2. Автор: 正一 佐々木. Владелец: NEC Corp. Дата публикации: 2000-02-14.

Manufacturing method of non-luminescent memory device

Номер патента: JP4252637B2. Автор: 鍾 元 柳,明 寛 ▲チョー▼,鎭 宇 金. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-04-08.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3479010B2. Автор: 浩樹 白井. Владелец: NEC Electronics Corp. Дата публикации: 2003-12-15.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP2734433B2. Автор: 賢治 斎藤. Владелец: Nippon Electric Co Ltd. Дата публикации: 1998-03-30.

Semiconductor wafer manufacturing method, method of manufacturing semiconductor energy beam detecting element, and semiconductor wafer

Номер патента: EP3680940A4. Автор: Kazuhisa Yamamura,Kazumasa Kosugi,Shintaro KAMADA. Владелец: Hamamatsu Photonics KK. Дата публикации: 2021-05-12.

Fabricating method of mirror bit memory device having split ono film with top oxide film formed by oxidation process

Номер патента: US20100109070A1. Автор: Masahiko Higashi. Владелец: SPANSION LLC. Дата публикации: 2010-05-06.

Fabricating method of mirror bit memory device having split ono film with top oxide film formed by oxidation process

Номер патента: US20130175601A1. Автор: Masahiko Higashi. Владелец: SPANSION LLC. Дата публикации: 2013-07-11.

Resistive memory device

Номер патента: US20160028009A1. Автор: Eng Huat Toh,Shyue Seng Tan,Yuan Sun,Elgin Kiok Boone Quek,Xuan Anh TRAN. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2016-01-28.

Nonvolatile memory cell and manufacturing method thereof, variable resistance nonvolatile memory device, and nonvolatile memory cell design method

Номер патента: JP5119436B2. Автор: 寛 中西,秀明 笠井,智弥 岸. Владелец: Osaka University NUC. Дата публикации: 2013-01-16.

PHOTOCROSSLINKABLE POLYIMIDE POLYMER, MANUFACTURING METHODS FOR THE SAME AND MEMORY DEVICES USING THE SAME

Номер патента: US20130140532A1. Автор: KIM Kyungtae,Kim Dong Min,KIM Jin Chul,Lee Taek Joon,Ree Moonhor,Park Samdae,Ham Suk Gyu,Ko Yong-gi,Choi Jun Man,Kwon Wonsang. Владелец: . Дата публикации: 2013-06-06.

Method of fabricating semiconductor memory device

Номер патента: TW507363B. Автор: Nobuyuki Takenaka,Katsuji Iguchi,Shigeo Ohnishi. Владелец: Sharp Kabushikl Kaisha. Дата публикации: 2002-10-21.

Memory device and method of manufacturing the same

Номер патента: US20210104537A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2021-04-08.

Magnetic random access memory device and method of forming the same

Номер патента: US7645619B2. Автор: Jun-Soo Bae,Jang-eun Lee,Hyun-Jo Kim,Young-ki Ha,Se-Chung Oh,Kyung-Tae Nam. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-01-12.

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Номер патента: US20230307074A1. Автор: Yih Wang,Perng-Fei Yuh,Chia-En HUANG,Tung-Cheng Chang,Chun-Ying Lee,Gu-Huan Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

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Номер патента: US20200395079A1. Автор: Joonsoo Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

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Номер патента: US6342408B1. Автор: Masako Yoshida,Makoto Yoshimi,Yukihito Oowaki. Владелец: Toshiba Corp. Дата публикации: 2002-01-29.

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Номер патента: US20160197272A1. Автор: Chin-Tsan Yeh,Bing-Lung Yu. Владелец: Macronix International Co Ltd. Дата публикации: 2016-07-07.

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Номер патента: US20240114683A1. Автор: TSUNG-WEI Lin,Chun-Sheng Wu,Kun-Che Wu,Chun-Yen Liao. Владелец: Winbond Electronics Corp. Дата публикации: 2024-04-04.

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Номер патента: US20210217477A1. Автор: Yong-Seok Kim,Byoung-taek Kim,Ji-Ho Cho,Won-Bo Shim,Sun-gyung HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-15.

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Номер патента: US11758710B2. Автор: An-Chi Liu,Ming-Feng Kuo,Yu-Cheng Tung,Fu-Che Lee,Gang-Yi Lin,Chien-Cheng Tsai,Junyi Zheng,Yi-Wang JHAN. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2023-09-12.

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Номер патента: US20200152273A1. Автор: Yo-Han Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

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Номер патента: US20200313082A1. Автор: Yasuyuki Sonoda. Владелец: Toshiba Memory Corp. Дата публикации: 2020-10-01.

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Номер патента: US20230380165A1. Автор: Milan PESIC. Владелец: Applied Materials Inc. Дата публикации: 2023-11-23.

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Номер патента: US6818503B2. Автор: Walter Hartner,Gerhard Enders,Rainer Bruchhaus,Volker Weinrich,Nicolas Nagel,Matthias Kronke,Thomas Mikolajick,Igor Kasko,Michael Rohner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-11-16.

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Номер патента: US20210020236A1. Автор: Jinyoung Kim,Jongmin Baek,Junho SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-21.

Layout method of a semiconductor memory device

Номер патента: US20070195591A1. Автор: Byung-Gil Choi,Choong-Keun Kwak,Du-Eung Kim,Beak-Hyung Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-08-23.

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Номер патента: US20190019566A1. Автор: Mariani Marcello,Baldi Livio. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2019-01-17.

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Номер патента: US20200105339A1. Автор: Kim Ji-Woong,KIM Kyoung-Don. Владелец: . Дата публикации: 2020-04-02.

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Номер патента: US20150235713A1. Автор: Mariani Marcello,Baldi Livio. Владелец: . Дата публикации: 2015-08-20.

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Номер патента: US20140353781A1. Автор: Mariani Marcello,Baldi Livio. Владелец: . Дата публикации: 2014-12-04.

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Номер патента: US9048410B2. Автор: Livio Baldi,Marcello Mariani. Владелец: Micron Technology Inc. Дата публикации: 2015-06-02.

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Номер патента: US10147497B2. Автор: Livio Baldi,Marcello Mariani. Владелец: Micron Technology Inc. Дата публикации: 2018-12-04.

Non-volatile capacitor of semiconductor device, semiconductor memory device comprising the same and method of operating the memory device

Номер патента: KR100552704B1. Автор: 박성호,이정현,이명재,박영수. Владелец: 삼성전자주식회사. Дата публикации: 2006-02-20.

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Номер патента: US8223548B2. Автор: Yutaka Hayashi,Kazuhiko Matsumoto,Takafumi Kamimura. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2012-07-17.

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Номер патента: US11968830B2. Автор: Chung-Hsuan Wang. Владелец: Winbond Electronics Corp. Дата публикации: 2024-04-23.

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Номер патента: US20120252202A1. Автор: Giulio Albini,Federica Zanderigo,Maria Gabriella Righini,Francesca Sammiceli. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-10-04.

Control method for memory device

Номер патента: US10424348B2. Автор: Tatsuo Izumi,Ryota Suzuki. Владелец: Toshiba Memory Corp. Дата публикации: 2019-09-24.

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Номер патента: US11664382B2. Автор: Gayoung KIM,Chang-Ki Baek,Byoung-don Kong,Hyangwoo KIM. Владелец: POSTECH Research and Business Development Foundation. Дата публикации: 2023-05-30.

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Номер патента: US20210193194A1. Автор: Tatsuo Izumi,Ryota Suzuki. Владелец: Toshiba Memory Corp. Дата публикации: 2021-06-24.

Method of forming split-gate memory cell array along with low and high voltage logic devices

Номер патента: EP3248220A1. Автор: Chun-Ming Chen,Nhan Do,Jeng-Wei Yang,Man-Tang Wu,Chien-Sheng Su. Владелец: Silicon Storage Technology Inc. Дата публикации: 2017-11-29.

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Номер патента: US20220055904A1. Автор: Amit Kumar THAKUR,Michael G. Stanford,Christopher John ARNUSCH,Steven E. Presutti,James Mitchell Tour,Swatantra Pratap SINGH,Duy X. LUONG,Kaichun Yang,John T. Li. Владелец: BG Negev Technologies and Applications Ltd. Дата публикации: 2022-02-24.

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Номер патента: US20150213890A1. Автор: Katoh Yoshikazu. Владелец: . Дата публикации: 2015-07-30.

Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications

Номер патента: EP0902438A1. Автор: Jan Van Houdt,Dirk Wellekens. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 1999-03-17.

Method of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications

Номер патента: US6058043A. Автор: Jan Van Houdt,Dirk Wellekens. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2000-05-02.

Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications

Номер патента: US6144586A. Автор: Jan Van Houdt,Dirk Wellekens. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2000-11-07.

Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications

Номер патента: US6246612B1. Автор: Jan Van Houdt,Dirk Wellekens. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2001-06-12.

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Номер патента: US8379476B2. Автор: Young-Hyun Jun,Beom-seop Lee,Sang-joon Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-02-19.

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Номер патента: US20230384212A1. Автор: Donghyun Lee,Younghoon Sohn,Sungyoon Ryu,Sooseok LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-30.

Method of forming split gate memory cells with 5 volt logic devices

Номер патента: EP3304596A1. Автор: Nhan Do,Vipin Tiwari. Владелец: Silicon Storage Technology Inc. Дата публикации: 2018-04-11.

Method of forming split gate memory cells with 5 volt logic devices

Номер патента: WO2016200623A1. Автор: Nhan Do,Vipin Tiwari. Владелец: Silicon Storage Technology, Inc.. Дата публикации: 2016-12-15.

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Номер патента: US20220005816A1. Автор: Koichiro Yamaguchi. Владелец: Kioxia Corp. Дата публикации: 2022-01-06.

Method of fabricating vertical memory device

Номер патента: US20210183890A1. Автор: Jae Gil Lee,Se Ho LEE,Hyangkeun YOO,Ju Ry SONG. Владелец: SK hynix Inc. Дата публикации: 2021-06-17.

Memory device which generates operation voltages in parallel with reception of an address

Номер патента: US20210158879A1. Автор: BUSHNAQ Sanad,Junichi Sato,Norichika ASAOKA,Takaya HANDA,Masashi Yamaoka,Yuri Terada,Noriyasu Kumazaki,Akio SUGAHARA,Yuzuru SHIBAZAKI,Kazuto Uehara,Ryosuke Isomura. Владелец: Toshiba Memory Corp. Дата публикации: 2021-05-27.

Color filter manufacturing method and apparatus, display device manufacturing method, method of manufacturing apparatus having display device, and display device panel manufacturing method and apparatus

Номер патента: KR100401316B1. Автор: 아까히라마꼬또,야마구찌히로미쯔. Владелец: 캐논 가부시끼가이샤. Дата публикации: 2003-10-10.

Method of operating nonvolatile memory device, nonvolatile memory device and memory controller performing the same

Номер патента: US12033706B2. Автор: Byungchul Jang,Joonsung Lim,Junyeong Seok,Younggul SONG,Eunchu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-09.

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Номер патента: US20240311011A1. Автор: Eun Chu Oh,Byungchul Jang,Joonsung Lim,Junyeong Seok,Younggul SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Method of accessing a memory device

Номер патента: GB2380296A. Автор: Hyung-joon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-04-02.

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Номер патента: US12093569B2. Автор: Young Don CHOI,Joo Hwan Kim,Jung Hwan Choi,Eun Seok SHIN,Su Cheol Lee,Jin do Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-17.

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Номер патента: US20240172440A1. Автор: Jae Taek Kim. Владелец: SK hynix Inc. Дата публикации: 2024-05-23.

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Номер патента: US20240244842A1. Автор: Dae Sung EOM. Владелец: SK hynix Inc. Дата публикации: 2024-07-18.

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Номер патента: US20240098998A1. Автор: Ryota Fujitsuka,Tomonari SHIODA,Takanori Yamanaka,Saori MATSUSHITA. Владелец: Kioxia Corp. Дата публикации: 2024-03-21.

Metallocenyl dendrimer, organic memory device using the same and fabrication method of the organic memory device

Номер патента: US20080111124A1. Автор: Kwang Hee Lee,Tae Lim Choi,Sang Kyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-05-15.

Metallocenyl dendrimer, organic memory device using the same and fabrication method of the organic memory device

Номер патента: US20110213172A1. Автор: Kwang Hee Lee,Tae Lim Choi,Sang Kyun Lee. Владелец: Individual. Дата публикации: 2011-09-01.

Method of forming vertical memory devices with improved dummy channel structures

Номер патента: US12137562B2. Автор: Yuhui HAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Data decoding method of non-volatile memory device and apparatus for performing the method

Номер патента: US09672942B2. Автор: Jun Jin Kong,Myung Kyu Lee,Kwang Hoon Kim,Beom Kyu Shin,Pil Sang Yoon,Ung Hwan KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Semiconductor memory devices and methods of fabricating semiconductor memory device

Номер патента: US20060028856A1. Автор: Kinya Ashikaga. Владелец: Individual. Дата публикации: 2006-02-09.

Semiconductor memory devices and methods of fabricating semiconductor memory device

Номер патента: US6972980B2. Автор: Kinya Ashikaga. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-12-06.

Semiconductor memory devices and methods of fabricating semiconductor memory device

Номер патента: US20050098810A1. Автор: Kinya Ashikaga. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-05-12.

Method of manufacturing flash memory device

Номер патента: US20110250727A1. Автор: Chih-Jen Huang,Chien-Hung Chen. Владелец: United Microelectronics Corp. Дата публикации: 2011-10-13.

Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

Номер патента: US12102012B2. Автор: Naoki Akiyama,Kenichi Yoshino. Владелец: Kioxia Corp. Дата публикации: 2024-09-24.

Non-volatile memory device, storage device having the same and operating method of non-volatile memory device

Номер патента: US20240242765A1. Автор: Sangsoo Park,ChiWeon Yoon,Chihyun Kim,Junehong PARK,Jayang Yoon,Hyeongdo CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Non-volatile memory device, storage device having the same and operating method of non-volatile memory device

Номер патента: EP4401079A1. Автор: Sangsoo Park,ChiWeon Yoon,Chihyun Kim,Junehong PARK,Jayang Yoon,Hyeongdo CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-17.

Nonvolatile memory device and method of operating nonvolatile memory device

Номер патента: EP4184512A1. Автор: Sangwan Nam,Bongsoon LIM,Hongsoo Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-24.

Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices

Номер патента: US20190229753A1. Автор: Sang-Uhn CHA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-07-25.

Semiconductor memory device and manufacturing method of the semiconductor memory device

Номер патента: US20240023331A1. Автор: Jae Ho Kim,Jae Min Lee. Владелец: SK hynix Inc. Дата публикации: 2024-01-18.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20240324204A1. Автор: In Ku Kang. Владелец: SK hynix Inc. Дата публикации: 2024-09-26.

Methods of forming magnetoresistive memory device assemblies

Номер патента: US20030228711A1. Автор: Hasan Nejad,James Deak. Владелец: Individual. Дата публикации: 2003-12-11.

Memory device, host device and method of operating the memory device

Номер патента: EP4177889A1. Автор: Young Don CHOI,Joo Hwan Kim,Jung Hwan Choi,Eun Seok SHIN,Su Cheol Lee,Jin do Byun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-10.

Method of forming nonvolatile memory device

Номер патента: US6867098B2. Автор: Se-Woong Park,Dong-soo Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-03-15.

Memory devices, semiconductor devices, and methods of operating a memory device

Номер патента: US11903188B2. Автор: Yu-Wei Lin,Yih Wang,Yoshitaka Yamauchi,Shao-Yu Chou,Perng-Fei Yuh,Jui-che Tsai,Keh-Jeng Chang,Meng-Sheng CHANG,Ku-Feng Lin,Philex Ming-Yan Fan,Chansyun David Yang,Tzu-Hsien YANG,Shao-Ting WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Magnetic Memory Device Based on Perpendicular Exchange Bias and Method of Manufacturing Magnetic Memory Device

Номер патента: US20240032443A1. Автор: Ji-Sung Lee,Joon-Hyun Kwon,Han-saem Lee,Su-Jung Noh,Byong-Guk Park,Jaimin Kang,Soogil Lee,Dae-Kyu Koh. Владелец: Kia Corp. Дата публикации: 2024-01-25.

Memory devices, semiconductor devices, and methods of operations a memory device

Номер патента: US20240147711A1. Автор: Yu-Wei Lin,Yih Wang,Yoshitaka Yamauchi,Shao-Yu Chou,Perng-Fei Yuh,Jui-che Tsai,Keh-Jeng Chang,Meng-Sheng CHANG,Ku-Feng Lin,Philex Ming-Yan Fan,Chansyun David Yang,Tzu-Hsien YANG,Shao-Ting WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20240196609A1. Автор: In Su Park,Jung Dal Choi,Jung Shik JANG,Seok Min JEON,Mi Seong PARK,Won Geun CHOI. Владелец: SK hynix Inc. Дата публикации: 2024-06-13.

Resistive memory device and operating method of the resistive memory device

Номер патента: US11948633B2. Автор: Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2024-04-02.

Memory device and method of operating the memory device

Номер патента: US11328761B2. Автор: Un Sang Lee,Chi Wook An,Kyung Sub PARK. Владелец: SK hynix Inc. Дата публикации: 2022-05-10.

Magnetoresistive memory device and method of manufacturing magnetoresistive memory device

Номер патента: US11818898B2. Автор: Shuichi TSUBATA. Владелец: Kioxia Corp. Дата публикации: 2023-11-14.

Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

Номер патента: US11776603B2. Автор: Naoki Akiyama,Kenichi Yoshino,Gayoung Ha. Владелец: Kioxia Corp. Дата публикации: 2023-10-03.

Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device

Номер патента: US7737527B2. Автор: Dong-Seok Suh,Youn-Seon Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-06-15.

Non-volatile memory device and method of operating nonvolatile memory device

Номер патента: US11942154B2. Автор: Sangwan Nam,Bongsoon LIM,Hongsoo Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-26.

Memory device and method of operating the memory device

Номер патента: US20210398583A1. Автор: Un Sang Lee,Chi Wook An,Kyung Sub PARK. Владелец: SK hynix Inc. Дата публикации: 2021-12-23.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20230180479A1. Автор: Fumie KIKUSHIMA. Владелец: Kioxia Corp. Дата публикации: 2023-06-08.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20240206161A1. Автор: Takuto IKEYAMA. Владелец: Kioxia Corp. Дата публикации: 2024-06-20.

Method of manufacturing semiconductor memory device having a capacitor

Номер патента: US6333226B1. Автор: Masahiro Yoshida,Hideyuki Ando. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2001-12-25.

Method of making semiconductor memory device

Номер патента: US5336630A. Автор: Seong J. Jang,Young K. Jun,Hee G. Lee,Kwang H. Yun. Владелец: Goldstar Electron Co Ltd. Дата публикации: 1994-08-09.

Method of making semiconductor memory device

Номер патента: US5851873A. Автор: Ichiro Murai,Shinobu Shigeta,Hidemi Arakawa. Владелец: Nippon Steel Semiconductor Corp. Дата публикации: 1998-12-22.

Method of manufacturing flash memory device

Номер патента: US20070004138A1. Автор: Young Hong. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-01-04.

Method of fabricating semiconductor memory device

Номер патента: EP4207966A1. Автор: Yuna Lee,Chanmi LEE,Jungpyo Hong,Sangwuk PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-05.

Methods of manufacturing vertical memory devices

Номер патента: US11792990B2. Автор: Byoungil Lee,Jimo GU,Yujin SEO,Subin KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Memory device and method of operating the memory device

Номер патента: US20210280259A1. Автор: Hyun Chul Cho. Владелец: SK hynix Inc. Дата публикации: 2021-09-09.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20230422505A1. Автор: Ryota Fujitsuka,Hiroki Kishi,Takanori Yamanaka. Владелец: Kioxia Corp. Дата публикации: 2023-12-28.

Method of manufacturing flash memory device

Номер патента: US7015097B2. Автор: Sang Wook Park,Seung Cheol Lee,Pil Geun Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-03-21.

Method of fabricating semiconductor memory device having trench capacitor and electrical contact thereto

Номер патента: US5380674A. Автор: Takeshi Sakata,Kiyoo Itoh,Shin'ichiro Kimura. Владелец: HITACHI LTD. Дата публикации: 1995-01-10.

Semiconductor memory device and method of manufacturing semiconductor memory device

Номер патента: US20240096418A1. Автор: Satoshi Nagashima. Владелец: Kioxia Corp. Дата публикации: 2024-03-21.

Method of operating a memory device

Номер патента: US20170220417A1. Автор: Thomas Kern,Karl Hofmann,Michael Goessel. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-08-03.

Method of fabricating organic memory device

Номер патента: US20090221113A1. Автор: Zing-Way Pei,Chia-Chieh Chang,Wen-Miao Lo. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2009-09-03.

Method of fabricating organic memory device

Номер патента: US8105914B2. Автор: Zing-Way Pei,Chia-Chieh Chang,Wen-Miao Lo. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2012-01-31.

Semiconductor memory device and method of operating semiconductor memory device

Номер патента: US20240146335A1. Автор: Hyeran Kim,Sungrae Kim,ChiSung OH,Gilyoung Kang,Yujung Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-02.

Manufacturing method of memory device

Номер патента: US20230301210A1. Автор: Da-Jun Lin,Fu-Yu Tsai,Bin-Siang Tsai,Shih-Wei Su,Chich-Neng Chang. Владелец: United Microelectronics Corp. Дата публикации: 2023-09-21.

Manufacturing method of memory device

Номер патента: US12108691B2. Автор: Da-Jun Lin,Fu-Yu Tsai,Bin-Siang Tsai,Shih-Wei Su,Chich-Neng Chang. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-01.

Memory device having improved p-n junction and manufacturing method thereof

Номер патента: US20240244829A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-18.

Memory device having improved p-n junction and manufacturing method thereof

Номер патента: US20240244827A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-18.

Non-volatile memory device and memory system including the same and program method thereof

Номер патента: US12094540B2. Автор: Jinwoo Park,Sang-Wan Nam,Jaeyong Jeong,Won-Taeck JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-17.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: US20240306386A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Three-dimensional memory device containing composite word lines including a respective fluorine-free capping sublayer and methods of forming the same

Номер патента: WO2024186381A1. Автор: Raghuveer S. Makala,Yusuke Mukae,Tatsuya Hinoue,Shungo ASAEDA. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-09-12.

Semiconductor memory device

Номер патента: US20240276722A1. Автор: In Su Park,Jung Dal Choi,Jung Shik JANG,Mi Seong PARK,Won Geun CHOI. Владелец: SK hynix Inc. Дата публикации: 2024-08-15.

Semiconductor memory device

Номер патента: US20240292617A1. Автор: In Su Park,Jung Shik JANG,Won Geun CHOI. Владелец: SK hynix Inc. Дата публикации: 2024-08-29.

Memory device and manufacturing method thereof

Номер патента: US20240373653A1. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Memory device and manufacturing method thereof

Номер патента: US12114513B2. Автор: Yu-Ming Lin,Chao-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Methods for forming memory devices, and associated devices and systems

Номер патента: US11889772B2. Автор: Michael B. Jeppson. Владелец: Micron Technology Inc. Дата публикации: 2024-01-30.

Manufacturing method for non-volatile semiconductor memory device and the non-volatile semiconductor memory device

Номер патента: TW200410373A. Автор: Hiroaki Tsunoda,Tadashi Iguchi. Владелец: Toshiba Kk. Дата публикации: 2004-06-16.

Semiconductor memory device and manufacturing method of semiconductor memory device

Номер патента: US20240023330A1. Автор: Jin Ha Kim. Владелец: SK hynix Inc. Дата публикации: 2024-01-18.

Pick-up structure of memory device and method for manufacturing memory device

Номер патента: US20240147717A1. Автор: Hsin-Hung Chou,Kao-Tsair Tsai,Cheng-Shuai Li. Владелец: Winbond Electronics Corp. Дата публикации: 2024-05-02.

Memory device, method of manufacturing memory device, and electronic device including memory device

Номер патента: US20240292618A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-08-29.

Memory device and method of manufacturing memory device

Номер патента: US20240260269A1. Автор: Hyun Mi HWANG. Владелец: SK hynix Inc. Дата публикации: 2024-08-01.

NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF THE NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF MEMORY CONTROLLER CONTROLLING THE NONVOLATILE MEMORY DEVICE

Номер патента: US20200035278A1. Автор: YUN Eun-jin,Kim Sung Joon,CHANG SANGHOAN. Владелец: . Дата публикации: 2020-01-30.

Nonvolatile memory device, operation method of the nonvolatile memory device, and operation method of memory controller controlling the nonvolatile memory device

Номер патента: US10818328B2. Автор: Eun-Jin Yun,Sung Joon Kim,Sanghoan Chang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-27.

Memory device having planarized fins and method of manufacturing the same

Номер патента: US20240341077A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-10.

Memory device storing logical page data and operating method of the memory device

Номер патента: US12106806B2. Автор: Jeong Hwan Kim,Jae Woong Kim,In Su Park,Jung Dal Choi,Jung Shik JANG,Woo Pyo Jeong. Владелец: SK hynix Inc. Дата публикации: 2024-10-01.

Memory device having planarized fins and method of manufacturing the same

Номер патента: US20240341078A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-10.

Method of manufacturing memory device and method of manufacturing phase-change memory device using the same

Номер патента: US20100197111A1. Автор: Hye Jin Seo,Keum Bum Lee,Hyung Suk Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-08-05.

Memory device and method of manufacturing memory device

Номер патента: US20240260265A1. Автор: Jae Young Oh,Eun Seok Choi,Dong Hwan Lee. Владелец: SK hynix Inc. Дата публикации: 2024-08-01.

Memory Device and Method of Making Same

Номер патента: US20110227027A1. Автор: Wolodymyr Czubatyj,Tyler Lowrey,Sergey Kostylev. Владелец: Ovonyx Inc. Дата публикации: 2011-09-22.

Manufacturing method of resistive memory device

Номер патента: US11778930B2. Автор: Chih-Chien Huang,Wen Yi Tan,Yunfei Fu,Yuheng Liu,Kuo Liang Huang. Владелец: United Semiconductor Xiamen Co Ltd. Дата публикации: 2023-10-03.

Method of forming memory device

Номер патента: US20240276700A1. Автор: Yasuyuki Sakogawa. Владелец: Micron Technology Inc. Дата публикации: 2024-08-15.

Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openings

Номер патента: US20240244844A1. Автор: Senaka Kanakamedala,Kartik SONDHI. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-07-18.

Method of fabricating memeory

Номер патента: US20060270142A1. Автор: Yider Wu,Jongoh Kim,Kent Chang. Владелец: Macronix International Co Ltd. Дата публикации: 2006-11-30.

Method of fabricating memeory

Номер патента: US20070259493A1. Автор: Yider Wu,Jongoh Kim,Kent Kuohua Chang. Владелец: Individual. Дата публикации: 2007-11-08.

Method of fabricating memory device

Номер патента: US20030232484A1. Автор: Chih-Wei Hung,Da Sung,Chien-Chih Du. Владелец: Individual. Дата публикации: 2003-12-18.

Nonvolatile memory device and nonvolatile memory system and random data read method thereof

Номер патента: US09400750B2. Автор: Jaehong Kim,Kijun Lee,Sejin Lim,Jungsoo Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-07-26.

Manufacturing method of phase change memory unit and manufacturing method of phase change memory device using same

Номер патента: KR100873878B1. Автор: 신희주,박두환,임상욱,구봉진,하용호,고한봉. Владелец: 삼성전자주식회사. Дата публикации: 2008-12-15.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: WO2024158467A1. Автор: Hiroyuki Tanaka,Takashi Kudo,Tomohiro Kubo,Ryota Suzuki,Takashi Kashimura,Masanori Tsutsumi,Naohiro Hosoda,Tatsuya Hinoue,Takumi Moriyama,Nobuyuki Fujimura,Hisakazu Otoi,Seiji Shimabukuro,Shunsuke Takuma. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-02.

Magnetoresistive memory devices

Номер патента: US20050029565A1. Автор: John Mattson. Владелец: Individual. Дата публикации: 2005-02-10.

Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same

Номер патента: US20240260267A1. Автор: Takashi Kudo,Ryota Suzuki,Masanori Tsutsumi,Naohiro Hosoda,Takumi Moriyama,Nobuyuki Fujimura. Владелец: SanDisk Technologies LLC. Дата публикации: 2024-08-01.

Memory device

Номер патента: US20240306387A1. Автор: Jae Taek Kim,Hye Yeong JUNG. Владелец: SK hynix Inc. Дата публикации: 2024-09-12.

Apparatus for transmitting and receiving a signal, a method of operating the same, a memory device, and a method of operating the memory device

Номер патента: US12088291B2. Автор: Kyungryun Kim,Kyungsoo Ha,Changkyo LEE,Dongkeon Lee,Jinhoon Jang,Kiseok Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-10.

Semiconductor memory device

Номер патента: US12096628B2. Автор: Koichiro Yamaguchi. Владелец: Kioxia Corp. Дата публикации: 2024-09-17.

Error detection and correction scheme for a memory device

Номер патента: US20140189475A1. Автор: William H. Radke,Shuba Swaminathan,Brady L. Keays. Владелец: Micron Technology Inc. Дата публикации: 2014-07-03.

Fabrication method for a flash memory device

Номер патента: US20040203204A1. Автор: Chun-Lein Su,Tzung-Ting Han. Владелец: Individual. Дата публикации: 2004-10-14.

Memory device having buried source/drain region and fabrication thereof

Номер патента: US20030199142A1. Автор: Shui-Chin Huang. Владелец: Individual. Дата публикации: 2003-10-23.

Methods of forming a magnetic random access memory etch spacer and structures formed thereby

Номер патента: EP3087618A1. Автор: Oleg Golonzka,Christopher WIEGAND,Daniel R. LAMBORN. Владелец: Intel Corp. Дата публикации: 2016-11-02.

Methods of forming a magnetic random access memory etch spacer and structures formed thereby

Номер патента: WO2015099899A1. Автор: Oleg Golonzka,Christopher WIEGAND,Daniel R. LAMBORN. Владелец: Intel Corporation. Дата публикации: 2015-07-02.

Manufacturing system, manufacturing method, method of operating a manufacturing apparatus, and light emitting device

Номер патента: KR100945469B1. Автор: 야마자키순페이,무라카미마사카즈,오타니히사시,쿠와바라히데아키. Владелец: 가부시키가이샤 한도오따이 에네루기 켄큐쇼. Дата публикации: 2010-03-05.

Manufacturing method of 3D NAND memory device and 3D NAND memory device

Номер патента: CN111696992B. Автор: 夏志良,张中,周文犀. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-01.

Manufacturing method of semiconductor nonvolatile memory device

Номер патента: JP2867782B2. Автор: 賢治 斎藤. Владелец: Nippon Electric Co Ltd. Дата публикации: 1999-03-10.

Manufacturing method of conductive bridging memory device

Номер патента: TWI764624B. Автор: 劉柏村,許智傑,甘鎧誌. Владелец: 國立陽明交通大學. Дата публикации: 2022-05-11.

Method of manufacturing magnetic memory device and magnetic memory device

Номер патента: TW200901390A. Автор: Chen Eugene,Huai Yiming,WANG LIEN-CHANG,Takeharu Kuroiwa,Shuichi Ueno,Haruo Furuta,Tatsuya Fukumura,Ryoji Matsuda. Владелец: Renesas Tech Corp. Дата публикации: 2009-01-01.

Method of manufacturing magnetic memory device, and magnetic memory device

Номер патента: TWI228327B. Автор: Makoto Motoyoshi. Владелец: Sony Corp. Дата публикации: 2005-02-21.

Method of manufacturing semiconductor memory device

Номер патента: US8624313B2. Автор: Kazuhiko Kajigaya. Владелец: Longitude Semiconductor SARL. Дата публикации: 2014-01-07.

Manufacturing method for non-volatile semiconductor memory device and the non-volatile semiconductor memory device

Номер патента: TWI238497B. Автор: Hiroaki Tsunoda,Sunao Iguchi. Владелец: Toshiba Corp. Дата публикации: 2005-08-21.

Method of fabricating flash memory device

Номер патента: TW200633232A. Автор: Seok-Kiu Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-09-16.

Method of fabricating flash memory device

Номер патента: TWI286369B. Автор: Tae-gyun Kim,Jeong-Hwan Park,Dong-Kee Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-09-01.

Method of fabricating flash memory device

Номер патента: TW200634995A. Автор: Myung-Kyu Ahn. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-10-01.

Method of manufacturing flash memory device

Номер патента: TWI268578B. Автор: Seung-Cheol Lee,Sang-Wook Park,Pil-Geun Song. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-12-11.

Method of fabricating flash memory device

Номер патента: TWI272726B. Автор: Seok-Kiu Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-02-01.

Method of fabricating a resistance based memory device and the memory device

Номер патента: US7659566B2. Автор: Seung-Eon Ahn,Hye-Young Kim,Byoung-ho Park,Jung-Bin Yun,You-seon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-02-09.

Method of fabricating a resistance based memory device and the memory device

Номер патента: US20070037351A1. Автор: Seung-Eon Ahn,Hye-Young Kim,Byoung-ho Park,Jung-Bin Yun,You-seon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-02-15.

Memory device and operating method of the memory device and host device

Номер патента: US11740966B2. Автор: Walter JUN,Young San KANG,Ye Jin CHO,Sung Tack HONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-29.

Memory device and operating method of the memory device

Номер патента: US20230386562A1. Автор: Hee Youl Lee. Владелец: SK hynix Inc. Дата публикации: 2023-11-30.

Nonvolatile memory devices

Номер патента: US7605473B2. Автор: Jung-Dal Choi,Yun-Seung Shin,Jong-Sun Sel. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-10-20.

Memory device and method of manufacturing the same

Номер патента: US11785869B2. Автор: Frederick Chen. Владелец: Winbond Electronics Corp. Дата публикации: 2023-10-10.

Programming techniques for memory devices having partial drain-side select gates

Номер патента: US11823744B2. Автор: Xiang Yang. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-11-21.

Memory device, controller controlling the same, memory system including the same, and operating method thereof

Номер патента: US11348623B2. Автор: Hyunyoon Cho,Sukhee Cho,YoungHoon SON,Youngdon CHOI,Junghwan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-31.

Direct word line contact and methods of manufacture for 3d memory

Номер патента: US20230371246A1. Автор: Tomohiko Kitajima,Gill Yong Lee,Sung-Kwan Kang,Chang Seok Kang. Владелец: Applied Materials Inc. Дата публикации: 2023-11-16.

Direct word line contact and methods of manufacture for 3d memory

Номер патента: WO2023224816A1. Автор: Tomohiko Kitajima,Gill Yong Lee,Sung-Kwan Kang,Chang Seok Kang. Владелец: Applied Materials, Inc.. Дата публикации: 2023-11-23.

Semiconductor memory device and driving method thereof

Номер патента: US20160078910A1. Автор: Mitsuru Sato. Владелец: Toshiba Corp. Дата публикации: 2016-03-17.

Clock control circuits for reducing consumption current in operations of a semiconductor memory device for inputting address signal and control signals, the semiconductor memory device with the clock control circuits, and operation methods of the semiconductor memory device for inputting address signal and control signals

Номер патента: KR100672128B1. Автор: 이인재. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2007-01-19.

Control method for memory device

Номер патента: US20190355396A1. Автор: Tatsuo Izumi,Ryota Suzuki. Владелец: Toshiba Memory Corp. Дата публикации: 2019-11-21.

Method of manufacturing memory device having word line with improved adhesion between work function member and conductive layer

Номер патента: US11895820B2. Автор: Yueh Hsu,Wei-Tong Chen. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-06.

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Номер патента: US20240014817A1. Автор: Kyungryun Kim,Kyungsoo Ha,Changkyo LEE,Dongkeon Lee,Jinhoon Jang,Kiseok Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-11.

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Номер патента: US11799479B2. Автор: Kyungryun Kim,Kyungsoo Ha,Changkyo LEE,Dongkeon Lee,Jinhoon Jang,Kiseok Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-24.

Method of manufacturing memory device having word lines with reduced leakage

Номер патента: US11832432B2. Автор: Chuan-Lin HSIAO. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-28.

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Номер патента: US11799478B2. Автор: Kyungryun Kim,Kyungsoo Ha,Changkyo LEE,Dongkeon Lee,Jinhoon Jang,Kiseok Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-24.

Semiconductor memory device

Номер патента: US20230301086A1. Автор: Koichiro Yamaguchi. Владелец: Kioxia Corp. Дата публикации: 2023-09-21.

Memory device with unipolar selector

Номер патента: US20220366954A1. Автор: Sheng-Chih Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-17.

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Номер патента: US20210006247A1. Автор: Kyungryun Kim,Kyungsoo Ha,Changkyo LEE,Dongkeon Lee,Jinhoon Jang,Kiseok Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-07.

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Номер патента: US20220140829A1. Автор: Lee Changkyo,Lee Dongkeon,Jang Jinhoon,Ha Kyungsoo,Oh Kiseok,Kim Kyungryun. Владелец: . Дата публикации: 2022-05-05.

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Номер патента: US20200204179A1. Автор: Lee Changkyo,Lee Dongkeon,Jang Jinhoon,Ha Kyungsoo,Oh Kiseok,Kim Kyungryun. Владелец: . Дата публикации: 2020-06-25.

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Номер патента: US20230075459A1. Автор: Kyungryun Kim,Kyungsoo Ha,Changkyo LEE,Dongkeon Lee,Jinhoon Jang,Kiseok Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-09.

Memory device having word line with improved adhesion between work function member and conductive layer

Номер патента: US11937420B2. Автор: Yueh Hsu,Wei-Tong Chen. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-19.

Memory device with unipolar selector

Номер патента: US20210398577A1. Автор: Sheng-Chih Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-23.

Flash memory device revising program voltage, three-dimensional memory device, memory system including the memory device, and methods of programming the memory device

Номер патента: US09779833B2. Автор: Sang-Hyun Joo,Jae-Woo Im. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-03.

Methods of operating nonvolatile memory devices, methods of operating storage device and storage devices

Номер патента: US20200194072A1. Автор: Sang-Won Jung,Shin-Ho Oh,Sang-Kwon Moon,Min-cheol Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-18.

Programming method of non volatile memory device

Номер патента: US09953703B2. Автор: Wook-ghee Hahn,Chang-Yeon YU,Joo-kwang LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-24.

Memory device and method of operating the memory device

Номер патента: US20240177775A1. Автор: Jae Hyeon Shin,Sung Hyun Hwang,In Gon YANG,Chang Han SON. Владелец: SK hynix Inc. Дата публикации: 2024-05-30.

Memory device and method of operating the memory device including detrapping operations during programming

Номер патента: US12068033B2. Автор: Jae Woong Kim,Shin Won SEO,Dong Jae JUNG. Владелец: SK hynix Inc. Дата публикации: 2024-08-20.

Method of operating a memory device

Номер патента: US09971549B2. Автор: In-su Choi,Yong-Jun Yu,Doo-Hwan Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-15.

Memory device including string select transistors having different threshold voltages and method of operating the memory device

Номер патента: US20240282383A1. Автор: Yohan Lee,Sangsoo Park,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-22.

Memory device including string select transistors having different threshold voltages and method of operating the memory device

Номер патента: EP4421808A1. Автор: Yohan Lee,Sangsoo Park,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-28.

Semiconductor memory device performing program operation and operating method of the semiconductor memory device

Номер патента: US20240265981A1. Автор: Yeong Jo MUN. Владелец: SK hynix Inc. Дата публикации: 2024-08-08.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20230223095A1. Автор: Junhyung Kim,Sungchul Park,Sanguhn CHA,Kiheung KIM,Hyojin JUNG,Kyungsoo Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-13.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US12136463B2. Автор: Junhyung Kim,Sungchul Park,Sanguhn CHA,Kiheung KIM,Hyojin JUNG,Kyungsoo Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-05.

Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications

Номер патента: US09633727B2. Автор: Man Chang,Hyun-Sang Hwang,In-Gyu Baek,Sang-Heon Lee. Владелец: Academy Industry Foundation of POSTECH. Дата публикации: 2017-04-25.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20230168819A1. Автор: Kijun Lee,Sunghye CHO,Yeonggeol Song,Myungkyu Lee,Sungrae Kim,Eunae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-06-01.

Non-volatile memory device and recovery method of non-volatile memory device

Номер патента: US20240242770A1. Автор: Jae-Duk Yu,Yohan Lee,Jiho Cho,Hojoon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-18.

Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices

Номер патента: US09990163B2. Автор: Uk-Song KANG,Hoi-Ju CHUNG,Sang-Uhn CHA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-05.

Additive manufacturing method, method of processing object data, data carrier, object data processor and manufactured object

Номер патента: EP3245018A1. Автор: Urban Harrysson. Владелец: Digital Metal AB. Дата публикации: 2017-11-22.

Method of programming semiconductor memory device

Номер патента: US20180226129A1. Автор: Ji Seon Kim,Sang Tae Ahn,Eun Mee KWON. Владелец: SK hynix Inc. Дата публикации: 2018-08-09.

Method of programming semiconductor memory device

Номер патента: US20180005696A1. Автор: Ji Seon Kim,Sang Tae Ahn,Eun Mee KWON. Владелец: SK hynix Inc. Дата публикации: 2018-01-04.

Method of programming semiconductor memory device

Номер патента: US09966144B2. Автор: Ji Seon Kim,Sang Tae Ahn,Eun Mee KWON. Владелец: SK hynix Inc. Дата публикации: 2018-05-08.

Memory device related to a program operation, method of operating the memory device, and storage device including the memory device

Номер патента: US20240161829A1. Автор: Chan Sik Park,Hyung Jin Choi,Gwi Han KO. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Memory device and method of operating the memory device

Номер патента: US11908532B2. Автор: Jong Woo Kim,Young Cheol SHIN. Владелец: SK hynix Inc. Дата публикации: 2024-02-20.

Memory device for performing foggy-fine program operation and method of operating the memory device

Номер патента: US20240161831A1. Автор: Yeong Jo MUN,Dong Hun Kwak,Jae Yeop Jung,Hyun Seob SHIN. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Memory device and method of operating the memory device

Номер патента: US20230420056A1. Автор: Kwang Min LIM,Tae Un Youn,Hye Lyoung LEE. Владелец: SK hynix Inc. Дата публикации: 2023-12-28.

Arrangements of memory devices and methods of operating the memory devices

Номер патента: US11817144B2. Автор: Hung-jen Liao,Cheng Hung Lee,Chien-yuan Chen,Hau-Tai Shieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-14.

Method of programming a memory device with different levels of current

Номер патента: WO2006133419A1. Автор: Swaroop Kaza,David Gaun,Stuart Spitzer,Juri Kriger. Владелец: SPANSION LLC. Дата публикации: 2006-12-14.

Memory device and method of operating the memory device

Номер патента: US20210050051A1. Автор: In Gon YANG. Владелец: SK hynix Inc. Дата публикации: 2021-02-18.

Arrangements of memory devices and methods of operating the memory devices

Номер патента: US20230386567A1. Автор: Hung-jen Liao,Cheng Hung Lee,Chien-yuan Chen,Hau-Tai Shieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Semiconductor memory device employing processing in memory (pim) and operation method of the semiconductor memory device

Номер патента: EP3805936A1. Автор: Sunjung Lee,Jaehyun Park,Jungho Ahn,Byeongho Kim,Seungwoo Seo,Jaewan Choi,Wonkyung JUNG,Minbok WI,Eojin LEE,Jongwook CHUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-14.

Semiconductor memory device employing processing in memory (pim) and operation method of the semiconductor memory device

Номер патента: US20210398597A1. Автор: Sunjung Lee,Jaehyun Park,Jungho Ahn,Byeongho Kim,Seungwoo Seo,Jaewan Choi,Wonkyung JUNG,Minbok WI,Eojin LEE,Jongwook CHUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-23.

Methods of operating nonvolatile memory devices

Номер патента: US20090016107A1. Автор: Tae-Hee Lee,Won-joo Kim,Jae-woong Hyun,Yoon-dong Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-01-15.

Memory device and method of operating the memory device

Номер патента: US20220115075A1. Автор: Won Jae Choi,Da Woon Han. Владелец: SK hynix Inc. Дата публикации: 2022-04-14.

Reading method of non-volatile memory device

Номер патента: US9159436B2. Автор: Do-Young Kim. Владелец: SK hynix Inc. Дата публикации: 2015-10-13.

Method of operating nonvolatile memory device, nonvolatile memory device performing the same and method of operating memory system using the same

Номер патента: US20210090657A1. Автор: Seongho Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-25.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20220208293A1. Автор: Junhyung Kim,Sungchul Park,Sanguhn CHA,Kiheung KIM,Hyojin JUNG,Kyungsoo Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-06-30.

Semiconductor memory device and operating method of the semiconductor memory device

Номер патента: US20230298668A1. Автор: Eun Hye Choi. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Semiconductor memory device, a controller, and operating methods of the semiconductor memory device and the controller

Номер патента: US20210183464A1. Автор: Jung Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2021-06-17.

Memory device and method of operating the memory device

Номер патента: US20220215887A1. Автор: Jae Woong Kim. Владелец: SK hynix Inc. Дата публикации: 2022-07-07.

Memory device with reduced read disturbance and method of operating the memory device

Номер патента: US20210027837A1. Автор: Jongmin Baek,Jongryul Kim,Taehui Na,Dueung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-28.

Interface circuit, memory device, storage device, and method of operating the memory device

Номер патента: US11960728B2. Автор: Jangwoo Lee,Jeongdon Ihm,Daehoon Na. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-16.

Program method of multi-bit memory device and data storage system using the same

Номер патента: US20110249496A1. Автор: Jun Jin Kong,Jaehong Kim,Hong Rak Son,Han Woong Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-10-13.

Method of programming nonvolatile memory device

Номер патента: US20100329021A1. Автор: Hee Youl Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-30.

Semiconductor memory devices, methods of operating semiconductor memory devices and memory systems

Номер патента: US20180158494A1. Автор: Min-Sang Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-07.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US11829614B2. Автор: Kijun Lee,Sunghye CHO,Yeonggeol Song,Myungkyu Lee,Sungrae Kim,Eunae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-28.

Method of programming nonvolatile memory device

Номер патента: US20130250696A1. Автор: Ji-Sang LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-09-26.

Memory device related to a verify operation and method of operating the memory device

Номер патента: US20240170078A1. Автор: Jong Hoon Lee,Se Chun Park. Владелец: SK hynix Inc. Дата публикации: 2024-05-23.

Semiconductor memory device and method of operating semiconductor memory device

Номер патента: US20240221860A1. Автор: Taeyoung Oh,Jongcheol Kim,Hyongryol Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Methods of operating semiconductor memory devices and semiconductor memory devices

Номер патента: US20190172512A1. Автор: Ki-Seok OH,Seong-Hwan Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-06-06.

Devices and methods of managing nonvolatile memory device having single-level cell and multi-level cell areas

Номер патента: US09805799B2. Автор: Kyung-Ho Shin,Mi-Hyang Lee,Gwang-Ok Go,Joon-Ho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-31.

Memory device and method of testing the memory device for failure

Номер патента: US20240120020A1. Автор: Jung Ryul Ahn,Byung Wook Bae. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Memory device and method of operating the memory device

Номер патента: US20240185921A1. Автор: Young Hwan Choi. Владелец: SK hynix Inc. Дата публикации: 2024-06-06.

Memory device related to verifying memory cells in an erase state and method of operating the memory device

Номер патента: US20240153568A1. Автор: Chan Sik Park,Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2024-05-09.

Memory devices and methods of operating the memory devices by programming normal cells after programming a first dummy cell

Номер патента: US09721664B2. Автор: Sang-Wan Nam,Kyung-Min Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-01.

Nonvolatile memory device and method of operating nonvolatile memory device

Номер патента: EP4177895A1. Автор: Sangwon Park,ChaeHoon KIM,Jiho Cho,Sanggi Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-10.

Memory device and method of operating the memory device

Номер патента: US20210319838A1. Автор: Byoung In JOO. Владелец: SK hynix Inc. Дата публикации: 2021-10-14.

Nonvolatile memory device, memory system including nonvolatile memory device, and method of controlling nonvolatile memory device

Номер патента: US20200135281A1. Автор: Minsoo Kim,Kyunghoon Sung,Deahan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-30.

Programming method of nonvolatile semiconductor memory device

Номер патента: US6636437B2. Автор: Takashi Kobayashi,Hideaki Kurata,Katsutaka Kimura,Naoki Kobayashi,Shunichi Saeki. Владелец: Hitachi Device Engineering Co Ltd. Дата публикации: 2003-10-21.

Programming method of nonvolatile semiconductor memory device

Номер патента: US20030026146A1. Автор: Takashi Kobayashi,Hideaki Kurata,Katsutaka Kimura,Naoki Kobayashi,Shunichi Saeki. Владелец: Individual. Дата публикации: 2003-02-06.

Programming method of nonvolatile semiconductor memory device

Номер патента: US20040052114A1. Автор: Takashi Kobayashi,Hideaki Kurata,Katsutaka Kimura,Naoki Kobayashi,Shunichi Saeki. Владелец: Renesas Technology Corp. Дата публикации: 2004-03-18.

Memory device, memory system, method of operating the memory device, and method of operating the memory system

Номер патента: US09824765B2. Автор: Yoon Kim,Sang-Soo Park,Won-Bo Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-21.

Method of testing semiconductor memory device, test device, and computer readable recording medium for recording test program for semiconductor memory device

Номер патента: US09666304B2. Автор: Sea Eun Park,Sung Hee Yun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-30.

Method of repairing a memory device and method of booting a system including the memory device

Номер патента: US09472305B2. Автор: Mi-Kyoung Park,Do-Geun Kim,Dong-yang Lee,Sun-Young Lim,Ju-Yun JUNG,Bu-Il Jung,Min-Yeab CHOO,Hyuk HAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-18.

Semiconductor memory device and method of controlling semiconductor memory device

Номер патента: US20220270693A1. Автор: Hideyuki Kataoka. Владелец: Kioxia Corp. Дата публикации: 2022-08-25.

Semiconductor memory device and method of controlling semiconductor memory device

Номер патента: US11676673B2. Автор: Hideyuki Kataoka. Владелец: Kioxia Corp. Дата публикации: 2023-06-13.

Semiconductor memory device, method of manufacturing semiconductor memory device and method of writing data into semiconductor memory device

Номер патента: US20100046271A1. Автор: Yuki Yamada. Владелец: Toshiba Corp. Дата публикации: 2010-02-25.

Operating method of a nonvolatile memory device

Номер патента: US09892792B2. Автор: Wandong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-13.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US12148494B2. Автор: Junhyung Kim,Sungchul Park,Sanguhn CHA,Kiheung KIM,Hyojin JUNG,Kyung-Soo Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-19.

Method of operating semiconductor memory device and memory system including semiconductor memory device

Номер патента: US09727401B2. Автор: Ju Hyeon HAN. Владелец: SK hynix Inc. Дата публикации: 2017-08-08.

Operating method of a nonvolatile memory device

Номер патента: US09620219B2. Автор: Wandong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-11.

Molded part, molded part manufacturing method, method of molded part gluing with object and application of fabric or unidirectional fabric

Номер патента: RU2742777C1. Автор: Карстен ФОЛЬКМАНН. Владелец: Ако Зеверин Альманн Гмбх Унд Ко Коммандитгезельшафт. Дата публикации: 2021-02-10.

Resistive memory device, resistive memory, and operating method of the resistive memory device

Номер патента: US09646685B2. Автор: Dae-Seok Byeon,Hyun-Kook PARK,Yeong-Taek Lee,Yong-kyu Lee,Hyo-Jin KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-09.

Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device

Номер патента: US09543032B2. Автор: Soo-Woong Lee,Sangchul Kang,Seokcheon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-10.

Semiconductor memory device and method of controlling semiconductor memory device

Номер патента: US09406366B2. Автор: Masaki Aoki. Владелец: Fujitsu Ltd. Дата публикации: 2016-08-02.

Method of reading nonvolatile memory device and method of operating nonvolatile memory device

Номер патента: US20110128783A1. Автор: Sam Kyu Won,Kwang Ho Baek. Владелец: Individual. Дата публикации: 2011-06-02.

Method of programming nonvolatile memory device

Номер патента: US20090285028A1. Автор: Jin Su Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-11-19.

Semiconductor memory device and operating method of the semiconductor memory device

Номер патента: US12073894B2. Автор: Hee Youl Lee. Владелец: SK hynix Inc. Дата публикации: 2024-08-27.

Memory device for processing operation, data processing system including the same, and method of operating the memory device

Номер патента: US12106107B2. Автор: Hak-soo Yu,Sukhan Lee,Seongil O,Namsung KIM,Shinhaeng KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-01.

Nonvolatile memory device, memory system, method of operating nonvolatile memory device, and method of operating memory system

Номер патента: US09852804B2. Автор: Jong-Chul Park,Sang-Soo Park,Hyun-Young Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-26.

Method of programming MLC memory device and related MLC memory device

Номер патента: US12119053B2. Автор: Chien-Hung Chen,Chia-Wen Wang,Chia-Hui Huang,Chih-Yang Hsu,Jen-Yang Hsueh,Ling-Hsiu Chou. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-15.

Resistive memory device, resistive memory system, and method of operating resistive memory device

Номер патента: US09633726B2. Автор: Hyun-Kook PARK,Yeong-Taek Lee,Chi-Weon Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-25.

Memory device and method of accessing a memory device

Номер патента: US20030095462A1. Автор: Andre Schäfer,Andrea Zuckerstatter. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-05-22.

Nonvolatile memory device, operation method of a nonvolatile memory device, and operation method of a controller

Номер патента: US20230410900A1. Автор: Sung-Won Yun,Hyejin YIM,Il Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-21.

Operating method of non-volatile memory device

Номер патента: US20240361946A1. Автор: Jaeyong Lee,Jihong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-31.

Operating method of a nonvolatile memory device for programming multi-page data

Номер патента: EP3958265A1. Автор: Jinyoung Kim,Sangwan Nam,Sehwan Park,Hyun SEO,Wandong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-23.

Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices

Номер патента: US20200151053A1. Автор: Nam-Sung Kim,Sang-Uhn CHA,Kyo-Min Sohn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

Nonvolatile memory device and method of erasing nonvolatile memory device

Номер патента: US09659662B2. Автор: Kihwan Choi,Sang-Wan Nam,Kang-Bin Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-23.

Method of operating semiconductor memory device

Номер патента: US09424905B2. Автор: Jungwoo Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-23.

Method of operating nonvolatile memory device comprising resistance material

Номер патента: US09405615B2. Автор: Jung Sunwoo,Kwang-Jin Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-02.

Method of predicting hydrogen content in steel of steel strip, method of controlling hydrogen content in steel, manufacturing method, method of forming prediction model of hydrogen content in steel, and device that predicts hydrogen content in steel

Номер патента: US20230313355A1. Автор: Hideyuki Takahashi,Soshi Yoshimoto,Maiko HIYAMA. Владелец: JFE Steel Corp. Дата публикации: 2023-10-05.

Methods of operating nonvolatile memory devices including variable verification voltages based on program/erase cycle information

Номер патента: US09842658B2. Автор: Chang-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-12.

Polymer particle manufacturing method, method of obtaining liquid mixture including polymer particles and organotellurium compound, tellurium recovery method, and dispersion of polymer particles

Номер патента: US20230295384A1. Автор: Masatoshi Tosaka,Shigeru Yamago. Владелец: KYOTO UNIVERSITY. Дата публикации: 2023-09-21.

Nonvolatile memory device, storage device including the same, and method of testing nonvolatile memory device

Номер патента: US20240331774A1. Автор: Daeseok Byeon,Yongsung CHO,Jaehue Shin,Gangmin Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-03.

Memory device, method of driving the memory device, and method of driving host device

Номер патента: EP4191382A3. Автор: Jun Ha HWANG,Chul-Hwan Choo,Doo Hee HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-06.

Memory device and method of operating the memory device

Номер патента: US20220084612A1. Автор: Hyung Jin Choi,Jae Hyeon Shin,Sungmook Lim,In Gon YANG. Владелец: SK hynix Inc. Дата публикации: 2022-03-17.

Method of testing bubble memory devices

Номер патента: CA1210863A. Автор: Seiichi Iwasa. Владелец: Fujitsu Ltd. Дата публикации: 1986-09-02.

Memory device and method of operating the memory device

Номер патента: US20040022117A1. Автор: Gerhard Müller,Heinz Hoenigschmid. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-02-05.

Semiconductor memory device and operating method of the semiconductor memory device

Номер патента: US20240118813A1. Автор: Dong Uk Lee,Hae Chang Yang,Hun Wook LEE. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Nonvolatile memory device, memory system including nonvolatile memory device, and method of controlling nonvolatile memory device

Номер патента: US10872672B2. Автор: Minsoo Kim,Kyunghoon Sung,Deahan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-22.

Page buffer, semiconductor memory device with page buffer, and method of operating semiconductor memory device

Номер патента: US11842773B2. Автор: Hyung Jin Choi. Владелец: SK hynix Inc. Дата публикации: 2023-12-12.

Memory device and method of operating the memory device

Номер патента: US20240161834A1. Автор: Hyun Seung Yoo,Hye Eun Heo. Владелец: SK hynix Inc. Дата публикации: 2024-05-16.

Sensing circuits of nonvolatile memory devices and methods of operating nonvolatile memory devices

Номер патента: US20200111529A1. Автор: Hyun-Jin Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-09.

Method of operating semiconductor memory device and memory system including semiconductor memory device

Номер патента: US20160259674A1. Автор: Ju Hyeon HAN. Владелец: SK hynix Inc. Дата публикации: 2016-09-08.

Memory device and method of operating the memory device

Номер патента: US11908527B2. Автор: Sung Won Bae,Dong Jae JUNG. Владелец: SK hynix Inc. Дата публикации: 2024-02-20.

Semiconductor memory device and method of operating semiconductor memory device

Номер патента: US11901025B2. Автор: Jungmin YOU,Seongjin Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-13.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20200365226A1. Автор: Taewon Kim,Yesin RYU,Yoonna OH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-11-19.

Refresh circuit of a semiconductor memory device and refresh control method of the semiconductor memory device

Номер патента: US20130201777A1. Автор: Jung-Bae Lee,Sang-Ho Shin,Min-Jeung Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-08-08.

Memory device and method of operating the memory device

Номер патента: US20240028217A1. Автор: Tae Hun Park. Владелец: SK hynix Inc. Дата публикации: 2024-01-25.

Erase method of non-volatile memory device

Номер патента: US11783900B2. Автор: Sang-Won Park,Won Bo Shim,Bong Soon LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-10.

Methods of testing nonvolatile memory devices and nonvolatile memory devices

Номер патента: US20240127883A1. Автор: Jongchul Park,Myeongwoo Lee,Yeonwook JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-18.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20210012849A1. Автор: Jaeho Lee,Kyungryun Kim,Yoonna OH,Hohyun Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-14.

Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices

Номер патента: US11031065B2. Автор: Hyun-Gi Kim,Sang-Uhn CHA,In-Woo JUN,Hoon SIN,Ye-sin Ryu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-08.

Memory device for processing operation, data processing system including the same, and method of operating the memory device

Номер патента: US20230236836A1. Автор: Hak-soo Yu,Sukhan Lee,Seongil O,Namsung KIM,Shinhaeng KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-27.

Semiconductor memory devices that are resistant to power attacks and methods of operating semiconductor memory devices that are resistant to power attacks

Номер патента: US8230234B2. Автор: Odile Derouet,Joong Chul Yoon,Gae Won Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-24.

Method of managing a memory device employing three-level cells

Номер патента: US7782665B2. Автор: Emanuele Confalonieri,Paolo Turbanti,Luigi Bettini,Carla Giuseppina Poidomani. Владелец: Individual. Дата публикации: 2010-08-24.

Method of programming mlc memory device and related mlc memory device

Номер патента: US20230238058A1. Автор: Chien-Hung Chen,Chia-Wen Wang,Chia-Hui Huang,Chih-Yang Hsu,Jen-Yang Hsueh,Ling-Hsiu Chou. Владелец: United Microelectronics Corp. Дата публикации: 2023-07-27.

Semiconductor memory devices that are resistant to power attacks and methods of operating semiconductor memory devices that are resistant to power attacks

Номер патента: US20090043969A1. Автор: Odile Derouet,Joong Chul Yoon,Gae Won Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-12.

Memory device and method of operating the memory device

Номер патента: US20240127898A1. Автор: Jae Woong Kim. Владелец: SK hynix Inc. Дата публикации: 2024-04-18.

Reading method of non-volatile memory device

Номер патента: US20130128660A1. Автор: Eun-Seok Choi,Seiichi Aritome,Han-Soo Joo,Sung-Kye Park,Seok-Kiu Lee,Hyun-Seung Yoo,Gyu-Seog Cho,Sung-Joo HONG. Владелец: Hynix Semiconductor Inc. Дата публикации: 2013-05-23.

Method of reading nonvolatile memory device and method of operating nonvolatile memory device

Номер патента: US7898865B2. Автор: Sam Kyu Won,Kwang Ho Baek. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-03-01.

Method of programming nonvolatile memory device

Номер патента: US20100008145A1. Автор: Jong Hyun Wang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-01-14.

Method of operating semiconductor memory device

Номер патента: US20150162080A1. Автор: Jungwoo Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-06-11.

Operating method of a nonvolatile memory device for programming multipage data

Номер патента: US11815982B2. Автор: Jinyoung Kim,Sangwan Nam,Sehwan Park,Hyun SEO,Wandong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-14.

Operating method of a nonvolatile memory device for programming multi-page data

Номер патента: US20240020187A1. Автор: Jinyoung Kim,Sangwan Nam,Sehwan Park,Hyun SEO,Wandong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-18.

Method of operating nonvolatile memory device controlled by controlling coupling resistance value between bit line and page buffer

Номер патента: US8867274B2. Автор: Eun Jong Lee,Won Yeol Choi. Владелец: SK hynix Inc. Дата публикации: 2014-10-21.

Operating method of a nonvolatile memory device for programming multi-page data

Номер патента: US20230044730A1. Автор: Jinyoung Kim,Sangwan Nam,Sehwan Park,Hyun SEO,Wandong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-09.

Method of operating nonvolatile memory device

Номер патента: US20080205157A1. Автор: Sang-jin Park,Sung-Il Park,Jong-Seob Kim,Kwang-Soo Seol,Sung-Hoon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-08-28.

Method of programming nonvolatile memory device

Номер патента: US20100008138A1. Автор: Jong Hyun Wang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-01-14.

Method of programming nonvolatile memory device

Номер патента: US20100246268A1. Автор: Hee Youl Lee,Ki Seog Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-09-30.

One-time programmable (otp) memory devices and methods of testing otp memory devices

Номер патента: US20200219570A1. Автор: Min-Yeol Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-09.

Semiconductor memory devices and methods of operating semiconductor memory devices

Номер патента: US20210208965A1. Автор: Sanguhn CHA,Juseong HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-08.

Multi-site testing of computer memory devices and serial io ports

Номер патента: US20140026006A1. Автор: Chinsong Sul. Владелец: Silicon Image Inc. Дата публикации: 2014-01-23.

Memory device capable of calibration and calibration methods therefor

Номер патента: US20040141370A1. Автор: Manoj Bhattacharyya,Lung Tran. Владелец: Individual. Дата публикации: 2004-07-22.

Memory device comprising an ecc for error correction based on hint data

Номер патента: EP4170660A1. Автор: YoungMin Lee,Jeongmin Seo,Changjun LEE,Eunkak Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-26.

Memory device and operating method thereof

Номер патента: US20240203492A1. Автор: Yu Wang,Ke Jiang,Zhichao DU,Weijun Wan. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-20.

Memory device and method of operating the same

Номер патента: US20210304831A1. Автор: Dong Uk Lee,Hae Chang Yang. Владелец: SK hynix Inc. Дата публикации: 2021-09-30.

Memory device and method of operating the same

Номер патента: US11355207B2. Автор: Dong Uk Lee,Hae Chang Yang. Владелец: SK hynix Inc. Дата публикации: 2022-06-07.

Memory device and method of operating the same

Номер патента: US20230282274A1. Автор: Cheng Hung Lee,Chien-yuan Chen,Hau-Tai Shieh,Che-An Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Memory device for performing program operation including program loops and method of operating the same

Номер патента: US20240233830A1. Автор: Chan Sik Park,Hyung Jin Choi,Gwi Han KO. Владелец: SK hynix Inc. Дата публикации: 2024-07-11.

Memory device and read method of memory device

Номер патента: US09741440B2. Автор: Kyung-Ryun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-22.

Method of operating memory device including multi-level memory cells

Номер патента: US09613664B2. Автор: Jun Jin Kong,Uri Beitler,Amit Berman. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-04.

Memory device and read method of memory device

Номер патента: US09478299B2. Автор: Kyung-Ryun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-25.

Operating method of nonvolatile memory device and nonvolatile memory system

Номер патента: US09785379B2. Автор: Junjin Kong,Hong Rak Son,Eun Chu Oh,Jongha KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-10.

Program method of nonvolatile memory device for having dense threshold voltage distribution by controlling voltage of bit line according to threshold voltage of memory cell

Номер патента: US09627070B2. Автор: Cheul Hee Koo,Byoung Young KIM. Владелец: SK hynix Inc. Дата публикации: 2017-04-18.

Nonvolatile memory device with reduced coupling noise and driving method thereof

Номер патента: US09570168B2. Автор: Kwang-Jin Lee,Beak-Hyung Cho,Dong-Hoon Jeong,Woo-Jung SUN,Jae-Yun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-14.

Nonvolatile memory device and operating method of nonvolatile memory device

Номер патента: US20240282377A1. Автор: Woojae Jang,Jaeduk LEE,Sejun Park,YuJeong Seo,Chaehyeon LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-22.

Memory device and method of operating the same

Номер патента: US12125525B2. Автор: Yu-Hao Hsu,Tsung-Hsien Huang,Wei-jer Hsieh,Tsung-Yuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Nonvolatile memory device and programming method thereof

Номер патента: US09595333B2. Автор: Youngwoo Park,Jaesung SIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-14.

Program and operating methods of nonvolatile memory device

Номер патента: US12020761B2. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-25.

Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells

Номер патента: US11769558B2. Автор: Viktor Markov,Alexander Kotov. Владелец: Silicon Storage Technology Inc. Дата публикации: 2023-09-26.

Methods of activating input/output lines of memory devices, and related devices and systems

Номер патента: US20210110864A1. Автор: Atsushi Shimizu,Yosuke Takano. Владелец: Micron Technology Inc. Дата публикации: 2021-04-15.

Memory devices that perform masked write operations and methods of operating the same

Номер патента: US09588840B2. Автор: Chul-Sung Park,Chan-Yong Lee,Tae-Seong Jang,Tae-Young Oh,Jang-Woo Ryu,Hoi-Ju CHUNG,Gong-Heum Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-07.

Methods of operating a nonvolatile memory device

Номер патента: US09679659B2. Автор: Jin-Kyu Kang,Joon-Sung LIM,Jang-Gn Yun,Sunil Shim,Euido Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-13.

Resistive memory device and operating method thereof

Номер патента: US20210193223A1. Автор: Ho-Seok EM. Владелец: SK hynix Inc. Дата публикации: 2021-06-24.

Memory device, operating and control method thereof

Номер патента: US09583189B2. Автор: Jun-Jin Kong,Pil-Sang Yoon,Hong-rak Son,Dong-Min Shin,Eun-Chu Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-28.

Read methods of memory devices using bit line sharing

Номер патента: US09633704B2. Автор: Dongku Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-25.

Control of memory device reading based on cell resistance

Номер патента: US09685227B2. Автор: Dae-Seok Byeon,Hyun-Kook PARK,Yeong-Taek Lee,Yong-kyu Lee,Hyo-Jin KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-20.

Method of operating memory device and method of operating memory system

Номер патента: US20180151218A1. Автор: Min-Su Kim,Sung-Joon Kim,So-Ra Park,Chang-Ho Yun,Hyun-Jung Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-31.

Memory device, electronic device and operating method of memory device

Номер патента: US11989422B2. Автор: YoungMin Lee,Jeongmin Seo,Changjun LEE,Eunkak Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-21.

Memory device, electronic device and operating method of memory device

Номер патента: US20230126954A1. Автор: YoungMin Lee,Jeongmin Seo,Changjun LEE,Eunkak Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-27.

Method of testing memory device, memory built-in self test (MBIST) circuit, and memory device for reducing test time

Номер патента: US11899959B2. Автор: Jaewon Park,Jaehoon Lee,Sangkil PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-13.

Programming of memory devices

Номер патента: US20180308552A1. Автор: Angelo Visconti,Silvia Beltrami. Владелец: Micron Technology Inc. Дата публикации: 2018-10-25.

Programming of memory devices

Номер патента: US20190355423A1. Автор: Angelo Visconti,Silvia Beltrami. Владелец: Micron Technology Inc. Дата публикации: 2019-11-21.

Memory device and method of operating the same

Номер патента: US20220005532A1. Автор: Sung Hyun Hwang. Владелец: SK hynix Inc. Дата публикации: 2022-01-06.

Method of programming multi-plane memory device

Номер патента: EP4332973A2. Автор: Yu Wang,Jialiang DENG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-03-06.

Method of programming multi-plane memory device for accelerating program speed and reducing program disturbance

Номер патента: US20210264994A1. Автор: Yu Wang,Jialiang DENG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-08-26.

Method of programming multi-plane memory device

Номер патента: EP4332973A3. Автор: Yu Wang,Jialiang DENG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-01.

Method of programming multi-plane memory device

Номер патента: EP3899711A1. Автор: Yu Wang,Jialiang DENG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-10-27.

Methods of programming memory device

Номер патента: US20210166765A1. Автор: Haibo Li,Venkatagirish NAGAVARAPU,Zhipeng DONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2021-06-03.

Method of operating memory device

Номер патента: US20210005275A1. Автор: Hee Young Kim,Gyu Bum HWANG. Владелец: SK hynix Inc. Дата публикации: 2021-01-07.

Memory device and read method of memory device

Номер патента: US20160035429A1. Автор: Kyung-Ryun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-02-04.

Memory device and read method of memory device

Номер патента: US20170032844A1. Автор: Kyung-Ryun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-02.

Memory device and method of operating the same

Номер патента: US20240221843A1. Автор: Jinyoung Kim,Sehwan Park,Joonsuc Jang,Jisang LEE,Minji CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Memory device and method of operating the same

Номер патента: US9530494B2. Автор: Dae-Seok Byeon,Hyun-Kook PARK,Yeong-Taek Lee,Yong-kyu Lee,Hyo-Jin KWON,Chi-Weon Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-27.

Memory Device with Reduced Standby Power Consumption and Method for Operating Same

Номер патента: US20080219080A1. Автор: Wim Dehaene,Peter Geens. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2008-09-11.

Memory device with reduced standby power consumption and method for operating same

Номер патента: US7751270B2. Автор: Wim Dehaene,Peter Geens. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2010-07-06.

Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells

Номер патента: EP4352728A1. Автор: Viktor Markov,Alexander Kotov. Владелец: Silicon Storage Technology Inc. Дата публикации: 2024-04-17.

Semiconductor memory devices that support enhanced data recovery operations

Номер патента: US20240071545A1. Автор: Dae-won Kim,Kyungduk Lee,Seungjun Oh,Youn-Soo CHEON,Seong Geon Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-29.

Program and operating methods of nonvolatile memory device

Номер патента: US20220223223A1. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-14.

Program and operating methods of nonvolatile memory device

Номер патента: US20200395094A1. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-17.

Program and operating methods of nonvolatile memory device

Номер патента: US20210118520A1. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-22.

Program and operating methods of nonvolatile memory device

Номер патента: US20230245710A1. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-03.

Program and operating methods of nonvolatile memory device

Номер патента: US11804279B2. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Program and operating methods of nonvolatile memory device

Номер патента: US12009046B2. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-11.

Programming method of nonvolatile memory device

Номер патента: US20140063966A1. Автор: Tae-gyun Kim. Владелец: SK hynix Inc. Дата публикации: 2014-03-06.

Concurrent read and reconfigured write operations in a memory device

Номер патента: EP3295310A1. Автор: Gideon Intrater,Shane Hollmer,Stephen Trinh,Bard Pedersen,Derric Lewis. Владелец: Adesto Technologies Corp. Дата публикации: 2018-03-21.

Concurrent read and reconfigured write operations in a memory device

Номер патента: US20200202924A1. Автор: Gideon Intrater,Shane Hollmer,Stephen Trinh,Bard Pedersen,Derric Lewis. Владелец: Adesto Technologies Corp. Дата публикации: 2020-06-25.

Wear leveling for a memory device

Номер патента: US09710376B2. Автор: Robert Baltar. Владелец: Micron Technology Inc. Дата публикации: 2017-07-18.

Methods of charging local input/output lines of memory devices, and related devices and systems

Номер патента: US20230116292A1. Автор: JIN Lan,Genta Takaya. Владелец: Micron Technology Inc. Дата публикации: 2023-04-13.

Methods of charging local input/output lines of memory devices, and related devices and systems

Номер патента: US20210335402A1. Автор: JIN Lan,Genta Takaya. Владелец: Micron Technology Inc. Дата публикации: 2021-10-28.

Memory device and operating method thereof

Номер патента: US20190355408A1. Автор: Jae Hyeon Shin,Sung Hyun Hwang. Владелец: SK hynix Inc. Дата публикации: 2019-11-21.

Access schemes for activity-based data protection in a memory device

Номер патента: US20210335407A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: Micron Technology Inc. Дата публикации: 2021-10-28.

Memory device, memory system, and method of operating the device

Номер патента: US09904491B2. Автор: Dong-Uk Kim,Jin-Ho Yi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-27.

Access suppression in a memory device

Номер патента: US09600179B2. Автор: Gus Yeung,Yew Keong Chong,Andy Wangkun CHEN,Sriram Thyagarajan,Michael Alan Filippo. Владелец: ARM LTD. Дата публикации: 2017-03-21.

Retention control in a memory device

Номер патента: US09542994B1. Автор: James Edward Myers,Pranay Prabhat. Владелец: ARM LTD. Дата публикации: 2017-01-10.

Methods of charging local input/output lines of memory devices, and related devices and systems

Номер патента: US20230377619A1. Автор: JIN Lan,Genta Takaya. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2023-11-23.

Memory device and method of operating the same

Номер патента: US20210174873A1. Автор: Jong Woo Kim,Young Cheol SHIN. Владелец: SK hynix Inc. Дата публикации: 2021-06-10.

Memory device and operating method of the memory device

Номер патента: US20230108946A1. Автор: Se Chun Park,Sung Hyun Hwang,Jae Yeop Jung. Владелец: SK hynix Inc. Дата публикации: 2023-04-06.

Memory device and operating method of the memory device

Номер патента: US11929126B2. Автор: Se Chun Park,Sung Hyun Hwang,Jae Yeop Jung. Владелец: SK hynix Inc. Дата публикации: 2024-03-12.

Read enable signal adjusting flash memory device and read control method of flash memory device

Номер патента: EP2232500A1. Автор: Hyunmo Chung,Hanmook Park. Владелец: Indilinx Co Ltd. Дата публикации: 2010-09-29.

Read enable signal adjusting flash memory device and read control method of flash memory device

Номер патента: WO2009084796A1. Автор: Hyunmo Chung,Hanmook Park. Владелец: Indilinx Co., Ltd.. Дата публикации: 2009-07-09.

Memory device, method of operating the memory device, memory module, and method of operating the memory module

Номер патента: US20230298638A1. Автор: Jaegon Lee,Sunyoung LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-21.

Processing multi-cycle commands in memory devices, and related methods, devices, and systems

Номер патента: WO2021112955A8. Автор: Vijayakrishna J. Vankayala. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2022-06-30.

Processing multi-cycle commands in memory devices, and related methods, devices, and systems

Номер патента: US20210166742A1. Автор: Vijayakrishna J. Vankayala. Владелец: Micron Technology Inc. Дата публикации: 2021-06-03.

Method and system for validating a memory device

Номер патента: US20220043708A1. Автор: Abhinav Sharma,Rengaraja Sudarmani,Sachin Suresh Upadhya,Prathiksha Gautham,Uday Kumar N B. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-10.

Memory device, method of operating the same, and method of operating storage device including the same

Номер патента: US12040020B2. Автор: Minseok Kim,Kwangho Choi,Joonsuc Jang,Jun-Yong Park,Il Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-16.

Memory device performing offset calibration and operating method thereof

Номер патента: US20230129949A1. Автор: Kiho Kim,DongHun Lee,Kihan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-27.

Memory device performing offset calibration and operating method thereof

Номер патента: US12125553B2. Автор: Kiho Kim,DongHun Lee,Kihan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-22.

Memory device capable of improving a threshold voltage distribution of memory cells and method of operating the memory device

Номер патента: US11217317B2. Автор: Ji Hyun Seo,Jong Kyung Park. Владелец: SK hynix Inc. Дата публикации: 2022-01-04.

Nonvolatile memory device and operation method thereof

Номер патента: US20200194073A1. Автор: Joonsoo Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-18.

Hybrid volatile and non-volatile memory device having a programmable register for shadowed storage locations

Номер патента: US09905297B2. Автор: Scott C. Best. Владелец: RAMBUS INC. Дата публикации: 2018-02-27.

Memory system including nonvolatile memory device and erase method thereof

Номер патента: US09733864B2. Автор: Kyung Ho Kim,Sangkwon Moon,Jihong Kim,Jaeyong Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-15.

Peripheral circuit, semiconductor memory device and operating method of the semiconductor device and/or peripheral circuit

Номер патента: US09715934B2. Автор: Hee Youl Lee. Владелец: SK hynix Inc. Дата публикации: 2017-07-25.

Method of operating memory device using different read conditions

Номер патента: US09472275B2. Автор: Dae-Seok Byeon,Hyun-Kook PARK,Yong-kyu Lee,Hyo-Jin KWON,Young-Hoon Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-18.

Aircraft fuselage structure and manufacturing method

Номер патента: RU2435703C2. Автор: Корд ХААК. Владелец: Эйрбас Оперейшнз Гмбх. Дата публикации: 2011-12-10.

Memory device and operating method thereof

Номер патента: US20080025086A1. Автор: Lu-Ping chiang,Po-An Chen. Владелец: Winbond Electronics Corp. Дата публикации: 2008-01-31.

Methods for adjusting row hammer refresh rates and related memory devices and systems

Номер патента: US12087347B2. Автор: Joo-Sang Lee. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-09-10.

Nonvolatile memory device and operating method thereof

Номер патента: US09543026B2. Автор: Il-han Park,Minsu Kim,Jung-ho Song,Su Chang Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-10.

Color filter manufacturing method, color filter manufacturing apparatus, color filter, method of planarizing surfaces of colored portions of color filter, display device manufacturing method, method of manufacturing apparatus having the display device, method of manufacturing display device panel, apparatus for manufacturing display device panel, ink amount determining method, and ink amount determining apparatus

Номер патента: KR100408459B1. Автор: 후지이께히로시,사또히로시,가시와자끼아끼오,이와따겐이찌,니시아끼오. Владелец: 캐논 가부시끼가이샤. Дата публикации: 2003-12-06.

Input/output line sense amplifiers and/or input/output line drivers in semiconductor memory devices and methods of operating such devices

Номер патента: US20050068833A1. Автор: Jung-hwan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-03-31.

Method of refreshing memory device

Номер патента: US09767882B2. Автор: Kwang-Il Park,Tae-Young Oh,Seung-jun Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

Operation management in a memory device

Номер патента: US09465539B2. Автор: Robert Melcher,Nicholas Hendrickson,Anthony R. CABRERA. Владелец: Micron Technology Inc. Дата публикации: 2016-10-11.

Error correction operations in a memory device

Номер патента: US09367391B2. Автор: William Lam. Владелец: Micron Technology Inc. Дата публикации: 2016-06-14.

Memory device and operating method thereof

Номер патента: US12033697B2. Автор: Meng-Fan Chang,Win-San Khwa,Yen-Cheng Chiu. Владелец: National Tsing Hua University NTHU. Дата публикации: 2024-07-09.

Semiconductor memory device and operating method thereof

Номер патента: US20160055913A1. Автор: Hee Youl Lee,Kyung Sik Mun. Владелец: SK hynix Inc. Дата публикации: 2016-02-25.

Nonvolatile memory device and read method of nonvolatile memory device

Номер патента: US20220051714A1. Автор: Minseok Kim,Jisu Kim,Doohyun Kim,Jinbae BANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-02-17.

Semiconductor memory device, semiconductor memory module and operation methods thereof

Номер патента: US20150124542A1. Автор: Jeong-Tae Hwang. Владелец: SK hynix Inc. Дата публикации: 2015-05-07.

Memory device for supporting new command input scheme and method of operating the same

Номер патента: US20240282353A1. Автор: Jemin RYU,Jaeyoun Youn,Youngcheon Kwon,Haesuk LEE,Jihyun Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-22.

Refresh method of controlling self-refresh cycle with temperature

Номер патента: US09704558B2. Автор: Cheol Kim,Tae-Young Oh,Su-yeon Doo,Geun-Tae Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-11.

Semiconductor memory device performing read retry mode and operating method of the same

Номер патента: US09293209B2. Автор: Jung Ryul Ahn,Seung Hwan BAIK. Владелец: SK hynix Inc. Дата публикации: 2016-03-22.

Memory device for internally performing read-verify operation, method of operating the same, and memory system including the same

Номер патента: US09990149B2. Автор: Hyun Ju Kim,Taek Kyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-05.

Memory device and a method of operating the same

Номер патента: US09704571B2. Автор: Kwang-Hyun Kim,Dong-yang Lee,Do-Kyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-11.

Error correction code unit, self-test method and associated controller applied to flash memory device for generating soft information

Номер патента: US09703627B2. Автор: Chen-Yu Weng. Владелец: Silicon Motion Inc. Дата публикации: 2017-07-11.

Threshold based multi-level cell programming for a non-volatile memory device

Номер патента: US09672933B2. Автор: Sang-Soo Park,Joon-Soo KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Driving method of nonvolatile memory device using variable resistive element

Номер патента: US09659644B2. Автор: Kwang-Jin Lee,Dong-Hoon Jeong,Woo-Jung SUN,Jae-Yun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-23.

Nonvolatile memory device, storage device having the same, operating method thereof

Номер патента: US09570176B2. Автор: Ohsuk Kwon,Won-Taeck JUNG,Tae-Hong Kwon,Tae-Min Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-14.

Programming method of memory, memory device and memory system

Номер патента: CN114783487A. Автор: 王瑜,宋大植. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-07-22.

Nand memory device wordlines pre-charging and operating method of the same

Номер патента: EP4398251A1. Автор: Yohan Lee,Sangsoo Park,Jonghoon Park,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-10.

Memory device pre-charging common source line and operating method of the same

Номер патента: US20240221836A1. Автор: Yohan Lee,Sangsoo Park,Jonghoon Park,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Memory device performing program operation and method of operating the same

Номер патента: US20240274210A1. Автор: Dong Hun Kwak. Владелец: SK hynix Inc. Дата публикации: 2024-08-15.

Nonvolatle memory device and memory system having the same, and related memory management, erase and programming methods

Номер патента: US09818485B2. Автор: Junjin Kong,Eun Chu Oh,Jongha KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-14.

Nonvolatile memory device and an erasing method thereof

Номер патента: US09558834B2. Автор: Dongseog EUN,Byeong-In Choe,Mincheol Park,Eunsuk Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-31.

Resistive memory device and operating method

Номер патента: US09552878B2. Автор: Dae-Seok Byeon,Hyun-Kook PARK,Chi-Weon Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-24.

Storage device and method of operating the same

Номер патента: US20200350022A1. Автор: Heon Jin CHOO. Владелец: SK hynix Inc. Дата публикации: 2020-11-05.

Flash memory device and programming method thereof

Номер патента: US8194463B2. Автор: Jong-Hwa Kim,Young-Joon Choi,Seok-Cheon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-06-05.

Memory storage apparatus and forming method of resistive memory device thereof

Номер патента: US20200265914A1. Автор: Shao-Ching Liao,Ping-Kun Wang,Ming-Che Lin,Chien-Min Wu,Chih-Cheng Fu,He-Hsuan CHAO. Владелец: Winbond Electronics Corp. Дата публикации: 2020-08-20.

Semiconductor memory device with a delay locked loop circuit and a method for controlling an operation thereof

Номер патента: US09564190B2. Автор: Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-07.

Nonvolatile memory device and method of reading the same

Номер патента: US09508423B2. Автор: Boh-Chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-29.

Semiconductor memory device with a delay locked loop circuit and a method for controlling an operation thereof

Номер патента: US09443565B2. Автор: Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-13.

Memory devices and methods of operating the same

Номер патента: US09418739B2. Автор: Yeong-Taek Lee,Yong-kyu Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-08-16.

Programming method of non volatile memory device according to program speed of memory cells

Номер патента: US10090045B2. Автор: Wook-ghee Hahn,Chang-Yeon YU,Joo-kwang LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-10-02.

Memory device and method of operating the same

Номер патента: US20190035481A1. Автор: Hae Soo Kim. Владелец: SK hynix Inc. Дата публикации: 2019-01-31.

Method of operating memory device and refresh method of the same

Номер патента: US09589625B2. Автор: Hyun-Ki Kim,Hyung-Sik You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-07.

Semiconductor memory device outputting status signal and operating method thereof

Номер патента: US09424901B1. Автор: Chi Wook An,Ju Yeab Lee. Владелец: SK hynix Inc. Дата публикации: 2016-08-23.

Nonvolatile memory device and operating method thereof

Номер патента: US20240221844A1. Автор: Yohan Lee,Sangsoo Park,Jonghoon Park,Jaeduk Yu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Nonvolatile memory device and operating method thereof

Номер патента: US09672924B2. Автор: Ohsuk Kwon,Kihwan Choi,Yongsung CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Memory systems including nonvolatile memory devices and dynamic access methods thereof

Номер патента: US09646705B2. Автор: Kyung Ho Kim,Sangkwon Moon,Jihong Kim,Jaeyong Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-09.

Voltage generator, semiconductor memory device having the same, and method of operating semiconductor memory device

Номер патента: US09607709B2. Автор: Min Su Kim. Владелец: SK hynix Inc. Дата публикации: 2017-03-28.

Interface circuit, memory device, storage device, and method of operating the memory device

Номер патента: SG10202006754WA. Автор: LEE JANGWOO,IHM Jeongdon,NA Daehoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-04-29.

ADDITIVE MANUFACTURING METHOD, METHOD OF PROCESSING OBJECT DATA, DATA CARRIER, OBJECT DATA PROCESSOR AND MANUFACTURED OBJECT

Номер патента: US20170312822A1. Автор: Kimblad Hans. Владелец: . Дата публикации: 2017-11-02.

ADDITIVE MANUFACTURING METHOD, METHOD OF PROCESSING OBJECT DATA, DATA CARRIER, OBJECT DATA PROCESSOR AND MANUFACTURED OBJECT

Номер патента: US20170312824A1. Автор: HARRYSSON Urban. Владелец: . Дата публикации: 2017-11-02.

Additive manufacturing method, method of processing object data, data carrier, object data processor and manufactured object

Номер патента: KR20170132714A. Автор: 한스 킴블라드. Владелец: 디지털 메탈 아베. Дата публикации: 2017-12-04.

Additive manufacturing method, method of processing object data, data carrier, object data processor and manufactured object

Номер патента: GB201500607D0. Автор: . Владелец: Digital Metal AB. Дата публикации: 2015-02-25.

Additive manufacturing method, method of processing object data, data carrier, object data processor and manufactured object

Номер патента: KR102465220B1. Автор: 한스 킴블라드. Владелец: 디지털 메탈 아베. Дата публикации: 2022-11-08.

Semiconductor memory device employing processing in memory (pim) and operation method of the semiconductor memory device

Номер патента: EP3805936B1. Автор: Sunjung Lee,Jaehyun Park,Jungho Ahn,Byeongho Kim,Seungwoo Seo,Jaewan Choi,Wonkyung JUNG,Minbok WI,Eojin LEE,Jongwook CHUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-16.

Nonvolatile memory device and operating method thereof

Номер патента: US20180122467A1. Автор: Suk-Soo Pyo,BoYoung Seo,Taejoong Song,Hyuntaek JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-03.

Method of dual cell memory device operation for improved end-of-life read margin

Номер патента: GB2415552B. Автор: Darlene Hamilton,Kulachet Tanpairoj,Edward Hsia,Mimi Lee,Alykhan Madhani. Владелец: Advanced Micro Devices Inc. Дата публикации: 2006-12-27.

Method of dual cell memory device operation for improved end-of-life read margin

Номер патента: TWI326875B. Автор: Kulachet Tanpairoj,Edward Hsia,Mimi Lee,Alykhan Madhani,Darlene G Hamilton. Владелец: SPANSION LLC. Дата публикации: 2010-07-01.

Method of dual cell memory device operation for improved end-of-life read margin

Номер патента: GB2427771B. Автор: Darlene Hamilton,Kulachet Tanpairoj,Edward Hsia,Mimi Lee,Alykhan Madhani. Владелец: Advanced Micro Devices Inc. Дата публикации: 2007-04-25.

Planar substrate structuring method, planar substrate manufacturing method, method of electrically contacting parts

Номер патента: JP4528124B2. Автор: クエンザー，ハンス−ヨアヒム,シュルツ，アルネ，ヴァイト,メルツ，ピーター. Владелец: フラウンホファー ゲセルシャフト ツール フェールデルンク ダー アンゲヴァンテン フォルシュンク エー．ファオ．. Дата публикации: 2010-08-18.

Anti-cd22 antibodies; polynucleotides that encode them; vector and host cell that includes them; manufacturing method; method of detecting the antibody in a biological sample; immunoconjugate comprising the antibody; composition that comprises it and its use to treat proliferative cell disorders b.

Номер патента: CL2007001536A1. Автор: Yan Wu,Wei-Ching Liang,Jr Allen J Ebens,Shang-Fan Yu,Alane M Gray. Владелец: Genentech Inc. Дата публикации: 2008-01-25.

Method of making a memory device fault tolerant using a variable domain redunancy replacement configuration

Номер патента: TW410288B. Автор: Toshiaki Kirihata,Jean-Marc Dortu,Gabriel Daniel,Karl-Peter Pfefferl. Владелец: Ibm. Дата публикации: 2000-11-01.

Method of verifying flash memory device

Номер патента: TWI310561B. Автор: Min Kyu Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-06-01.

Operating method of a nonvolatile memory device for programming multi-page data

Номер патента: EP3958265B1. Автор: Jinyoung Kim,Sangwan Nam,Sehwan Park,Hyun SEO,Wandong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-09.

Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device

Номер патента: US11646087B2. Автор: Hangil JEONG,Bong-Kil Jung,Yongsung CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-09.

Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device

Номер патента: US20210343352A1. Автор: Hangil JEONG,Bong-Kil Jung,Yongsung CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-04.

Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device

Номер патента: US20230253057A1. Автор: Hangil JEONG,Bong-Kil Jung,Yongsung CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-08-10.

Nonvolatile memory device, storage device including nonvolatile memory device, and operating method of nonvolatile memory device

Номер патента: US11942166B2. Автор: Hangil JEONG,Bong-Kil Jung,Yongsung CHO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-26.

System and method of testing memory device and non-transitory computer readable medium

Номер патента: US11735283B2. Автор: Po-Hsun Chang. Владелец: Nanya Technology Corp. Дата публикации: 2023-08-22.

User device including a nonvolatile memory device and a data write method thereof

Номер патента: US11860774B2. Автор: Kyung Ho Kim,Sung Won Jung,Sangkwon Moon,Seunguk SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Access schemes for activity-based data protection in a memory device

Номер патента: WO2020036721A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-02-20.

Electronic device, memory device, and method of operating memory device

Номер патента: US20200357464A1. Автор: Seung Yun Lee. Владелец: SK hynix Inc. Дата публикации: 2020-11-12.

Access schemes for activity-based data protection in a memory device

Номер патента: US20200058341A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: Micron Technology Inc. Дата публикации: 2020-02-20.

Access suppression in a memory device

Номер патента: US20160034403A1. Автор: Gus Yeung,Yew Keong Chong,Andy Wangkun CHEN,Sriram Thyagarajan,Michael Alan Filippo. Владелец: ARM LTD. Дата публикации: 2016-02-04.

Memory device, method of operating the memory device, memory module, and method of operating the memory module

Номер патента: EP3754512A1. Автор: Jaegon Lee,Sunyoung LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-23.

Access schemes for activity-based data protection in a memory device

Номер патента: EP3837685A1. Автор: Corrado Villa,Andrea Martinelli. Владелец: Micron Technology Inc. Дата публикации: 2021-06-23.

System and method of testing memory device and non-transitory computer readable medium

Номер патента: US20230187006A1. Автор: Po-Hsun Chang. Владелец: Nanya Technology Corp. Дата публикации: 2023-06-15.

Memory device for optimizing computation of convolution layer, method for controlling memory device, and recording medium storing instruction to perform method for controlling memory device

Номер патента: US20230206033A1. Автор: Jong Hwan KO,Sung Min Moon,Johnny RHE. Владелец: Sungkyunkwan University Research and Business Foundation. Дата публикации: 2023-06-29.

Method of operating memory device and methods of writing and reading data in memory device

Номер патента: US9589674B2. Автор: Chul-woo Park,Jung-hwan Choi,Uk-Song KANG,Young-Soo Sohn,Jong-Pil Son,Kyo-Min Sohn,Won-Il Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-07.

Memory device and control method thereof

Номер патента: SG10201804165PA. Автор: PARK MIN-SANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-29.

Memory device

Номер патента: US11790958B2. Автор: Wei Min Chan,Chien-Chen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-17.

Memory device and method of refreshing memory device based on temperature

Номер патента: US11804254B2. Автор: Saemi Song,Dokyun Kim,Yeonkyu CHOI,Doohee Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-31.

Method of operating memory device and memory device performing the same

Номер патента: US11829224B2. Автор: Youngjae PARK,Reum Oh,Hyungjin Kim,Jinyong Choi,Dongyeon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-28.

Memory devices and electronic systems having a hybrid cache with static and dynamic cells, and related methods

Номер патента: EP3516525A1. Автор: Peter Feeley,Ashutosh Malshe,Kishore K. Muchherla,Sampath K. Ratnam,Michael G. Miller,Renato C. Padilla,Christopher S. Hale. Владелец: Micron Technology Inc. Дата публикации: 2019-07-31.

Memory devices and electronic systems having a hybrid cache including static and dynamic caches, and related methods

Номер патента: US20190250824A1. Автор: Peter Feeley,Ashutosh Malshe,Kishore K. Muchherla,Sampath K. Ratnam,Michael G. Miller,Renato C. Padilla,Christopher S. Hale. Владелец: Micron Technology Inc. Дата публикации: 2019-08-15.

Memory devices and electronic systems having a hybrid cache with static and dynamic cells, and related methods

Номер патента: WO2018052690A1. Автор: Peter Feeley,Ashutosh Malshe,Kishore K. Muchherla,Sampath K. Ratnam,Michael G. Miller,Renato C. Padilla,Christopher S. Hale. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2018-03-22.

Semiconductor memory device and operation method thereof

Номер патента: US20170344301A1. Автор: Reum Oh,Hak-soo Yu,Je Min RYU. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-30.

Memory device, memory system, and method of operating memory device

Номер патента: US20200020404A1. Автор: Jong Wook Kim. Владелец: SK hynix Inc. Дата публикации: 2020-01-16.

Memory Device

Номер патента: US20240161787A1. Автор: Wei Min Chan,Chien-Chen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-16.

Memory Device

Номер патента: US20220051702A1. Автор: Wei Min Chan,Chien-Chen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-17.

Memory device performing offset calibration and operating method thereof

Номер патента: EP4174860A1. Автор: Kiho Kim,DongHun Lee,Kihan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-03.

Memory device performing erase operation and method of operating the same

Номер патента: US20240185927A1. Автор: Yeong Jo MUN,Dong Hun Kwak. Владелец: SK hynix Inc. Дата публикации: 2024-06-06.

Memory device and method of operating the same

Номер патента: US20210005233A1. Автор: Sung Hwa Ok,Heon Ki KIM. Владелец: SK hynix Inc. Дата публикации: 2021-01-07.

Memory devices and methods of their operation during a programming operation

Номер патента: US9805801B1. Автор: Yogesh Luthra,Xiaojiang Guo,Kim-Fung Chan. Владелец: Micron Technology Inc. Дата публикации: 2017-10-31.

Test method of semiconductor memory device and semiconductor memory system transferring fail address data from a volatile to a non-volatile memory array using an error-correction code engine

Номер патента: US9747998B2. Автор: Sua Kim,Sung Hyun Lee,Hak-soo Yu,Jun Hee Yoo,Chulwoo PARK,Jaeyoun Youn,Hyojin Choi,Dongsoo Kang,Jinsu JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Methods for row hammer mitigation and memory devices and systems employing the same

Номер патента: US20240096394A1. Автор: Dean D. Gans. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2024-03-21.

Method of programming multi-plane memory device

Номер патента: US11776641B2. Автор: Yu Wang,Jialiang DENG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-10-03.

Memory device and operating method thereof

Номер патента: US20230335197A1. Автор: Steve S. Chung. Владелец: Taiwan Semiconductor Memory Inc. Дата публикации: 2023-10-19.

Memory device and method of operating the same

Номер патента: US20200294597A1. Автор: Hee Joung PARK,Won Chul SHIN,Kyeong Seung KANG. Владелец: SK hynix Inc. Дата публикации: 2020-09-17.

Memory device, operation method of a memory device, and operation method of a memory controller

Номер патента: EP4250124A1. Автор: Taeyoung Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-27.

Memory device, operation method of a memory device, and operation method of a memory controller

Номер патента: US20230305706A1. Автор: Taeyoung Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Methods for row hammer mitigation and memory devices and systems employing the same

Номер патента: US11837272B2. Автор: Dean D. Gans. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2023-12-05.

Memory device and method of operating the same

Номер патента: US20200294596A1. Автор: Hee Joung PARK,Won Chul SHIN,Kyeong Seung KANG. Владелец: SK hynix Inc. Дата публикации: 2020-09-17.

Memory device, memory system including memory device, and method of operating memory device

Номер патента: US20240144988A1. Автор: Doohee Hwang,Chulhwan Choo,Jeongseok SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-02.

Page buffer and verify method of flash memory device using the same

Номер патента: US20060114723A1. Автор: Gi Ju. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-06-01.

Methods of reducing clock domain crossing timing violations, and related devices and systems

Номер патента: US11727979B2. Автор: Vijayakrishna J. Vankayala,William C. Waldrop,Kallol Mazumder,Navya Sri Sreeram. Владелец: Micron Technology Inc. Дата публикации: 2023-08-15.

Nonvolatile memory device and an erase method thereof

Номер патента: US20190156896A1. Автор: Jin-woo Park,Seung-Bum Kim,Se-Hwan Park,Deok-Woo Lee,Ji-Yoon Park,Wan-Dong KIM,You-Se Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-23.

Nonvolatile memory device and an erase method thereof

Номер патента: US20190392904A1. Автор: Jin-woo Park,Seung-Bum Kim,Se-Hwan Park,Deok-Woo Lee,Ji-Yoon Park,Wan-Dong KIM,You-Se Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-26.

Method of programming multi-plane memory device

Номер патента: US20230368853A1. Автор: Yu Wang,Jialiang DENG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-11-16.

Methods for adjusting row hammer refresh rates and related memory devices and systems

Номер патента: US20210193218A1. Автор: Joo-Sang Lee. Владелец: Micron Technology Inc. Дата публикации: 2021-06-24.

Methods for adjusting row hammer refresh rates and related memory devices and systems

Номер патента: US20230360687A1. Автор: Joo-Sang Lee. Владелец: Lodestar Licensing Group LLC. Дата публикации: 2023-11-09.

Memory device performing pruning, method of operating the same, and electronic device performing pruning

Номер патента: US20240202526A1. Автор: Ho-Youn Kim,Jong-yoon Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-20.

Method of operating memory device and memory device performing the same

Номер патента: US20240221846A1. Автор: ChiWeon Yoon,Chihyun Kim,Junehong PARK,Jayang Yoon,Hyeongdo CHOI. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Method of reading memory device in page mode and row decoder control circuit using the same

Номер патента: US6930952B2. Автор: Sung Ryong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-08-16.

Nonvolatile memory device and related driving method

Номер патента: US11056195B1. Автор: Yi-Ching Liu,Chin-Ming Yang. Владелец: Macronix International Co Ltd. Дата публикации: 2021-07-06.

Method of operating memory device, method of operating memory controller and memory system

Номер патента: US11921579B2. Автор: Chang-yong Lee,Jun Hyung Kim,Kyung-Soo Ha,Ki-Heung Kim,Sang Uhn CHA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-05.

Memory device and method of operating the same

Номер патента: US20240069746A1. Автор: Hee Youl Lee. Владелец: SK hynix Inc. Дата публикации: 2024-02-29.

Memory device and method

Номер патента: US20120014202A1. Автор: Jun Li,Thinh Tran,Joseph Tzou. Владелец: Cypress Semiconductor Corp. Дата публикации: 2012-01-19.

Method of programming memory device

Номер патента: US20160042803A1. Автор: Sang-Soo Park,Joon-Soo KWON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-02-11.

Memory device and method of operating the memory device

Номер патента: US20210090620A1. Автор: Chul Woo Yang. Владелец: SK hynix Inc. Дата публикации: 2021-03-25.

Operation method of nonvolatile memory device

Номер патента: US11817158B2. Автор: Young-Jin Cho,Nari Lee,Sangyong Yoon,Doo-Yeun Jung,Bu-il NAM,Yeji Nam. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-14.

Memory device and operating method thereof

Номер патента: US20230260575A1. Автор: Meng-Fan Chang,Win-San Khwa,Yen-Cheng Chiu. Владелец: National Tsing Hua University NTHU. Дата публикации: 2023-08-17.

Memory device including massbit counter and method of operating the same

Номер патента: US11776642B2. Автор: Sung-Won Yun,Han-Jun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-03.

Semiconductor memory device and method of programming the same

Номер патента: US20120134214A1. Автор: Seok Jin Joo. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-05-31.

Memory device including massbit counter and method of operating the same

Номер патента: US20220101931A1. Автор: Sung-Won Yun,Han-Jun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-31.

Memory device including massbit counter and method of operating the same

Номер патента: US20200202960A1. Автор: Sung-Won Yun,Han-Jun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-25.

Memory device for supporting new command input scheme and method of operating the same

Номер патента: US12002543B2. Автор: Jemin RYU,Jaeyoun Youn,Youngcheon Kwon,Haesuk LEE,Jihyun Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-04.

Memory device including massbit counter and method of operating the same

Номер патента: US20220028464A1. Автор: Sung-Won Yun,Han-Jun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-01-27.

Memory device including massbit counter and method of operating the same

Номер патента: US11594294B2. Автор: Sung-Won Yun,Han-Jun LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-28.

METHODS OF OPERATING NONVOLATILE MEMORY DEVICES, METHODS OF OPERATING STORAGE DEVICE AND STORAGE DEVICES

Номер патента: US20200194072A1. Автор: Kwon Min-cheol,OH SHIN-HO,JUNG SANG-WON,MOON SANG-KWON. Владелец: . Дата публикации: 2020-06-18.

METHODS OF OPERATING NONVOLATILE MEMORY DEVICES, METHODS OF OPERATING STORAGE DEVICE AND STORAGE DEVICES

Номер патента: US20210264985A1. Автор: Kwon Min-cheol,OH SHIN-HO,JUNG SANG-WON,MOON SANG-KWON. Владелец: . Дата публикации: 2021-08-26.

Clock control circuits for reducing consumption current in data input and output operations of a semiconductor memory device, the semiconductor memory device with the clock control circuits, and data input and output operation methods of the semiconductor memory device

Номер патента: KR100632626B1. Автор: 이인재. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-10-09.

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Номер патента: US20230154509A1. Автор: Jun Ha HWANG,Chul-Hwan Choo,Doo Hee HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-05-18.

Program method of flash memory device

Номер патента: US20090207660A1. Автор: Min Kyu Lee,Sook Kyung Kim,Seok Jin Joo,Hyung Seok Kim,Kyung Pil Hwang,Keum Hwan Noh,Ju In KIM. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-08-20.

Systems and methods for monitoring and managing memory devices

Номер патента: US11798646B2. Автор: HAN Kyu Lee,Sanjeev Aggarwal,Sumio Ikegawa,Syed M. Alam,Dimitri Houssameddine,Iftekhar Rahman,Pedro Sanchez,Frederick Charles Neumeyer,Jason Janesky,Hamid ALMASI,Cristian P. Masgras. Владелец: Everspin Technologies Inc. Дата публикации: 2023-10-24.

Semiconductor memory device with a delay locked loop circuit and a method for controlling an operation thereof

Номер патента: US20160343424A1. Автор: Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-24.

Non-volatile memory device, storage device and program method thereof

Номер патента: US20220230687A1. Автор: Jun-Ho SEO,Sangwon Hwang,Haneol JANG,Suk-Eun Kang,Youngwook JEONG,Wanha HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-21.

Memory devices having sense amplifiers therein that support offset cancellation and methods of operating same

Номер патента: US20240062806A1. Автор: Eunki Hong,Minsoo Jang,Seungki HONG,Jaeseong Lim,Jinsol PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-22.

Memory device, method of operating the same, and apparatus including the same

Номер патента: US8737153B2. Автор: Cheol Kim,Jung Sik Kim,Young-Il Lim,Yun Sang Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-27.

Semiconductor memory device with a delay locked loop circuit and a method for controlling an operation thereof

Номер патента: US20170125076A1. Автор: Hangi Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-04.

Memory device for receiving one clock signal as a multi-level signal and restoring original data encoded into the clock signal and method of operating the same

Номер патента: US11594267B2. Автор: Jaewoo Park,YoungHoon SON,Youngdon CHOI,Junghwan Choi,Mingyu Lee,Hyungmin Jin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-02-28.

Systems and methods for monitoring and managing memory devices

Номер патента: WO2022094047A3. Автор: HAN Kyu Lee,Sanjeev Aggarwal,Sumio Ikegawa,Syed M. Alam,Dimitri Houssameddine,Iftekhar Rahman,Pedro Sanchez,Frederick Charles Neumeyer,Jason Janesky,Hamid ALMASI,Cristian P. Masgras. Владелец: Everspin Technologies, Inc.. Дата публикации: 2022-06-02.

Systems and methods for monitoring and managing memory devices

Номер патента: WO2022094047A2. Автор: HAN Kyu Lee,Sanjeev Aggarwal,Sumio Ikegawa,Syed M. Alam,Dimitri Houssameddine,Iftekhar Rahman,Pedro Sanchez,Frederick Charles Neumeyer,Jason Janesky,Hamid ALMASI,Cristian P. Masgras. Владелец: Everspin Technologies, Inc.. Дата публикации: 2022-05-05.

Systems and methods for monitoring and managing memory devices

Номер патента: EP4237949A2. Автор: HAN Kyu Lee,Sanjeev Aggarwal,Sumio Ikegawa,Syed M. Alam,Dimitri Houssameddine,Iftekhar Rahman,Pedro Sanchez,Frederick Charles Neumeyer,Jason Janesky,Hamid ALMASI,Cristian P. Masgras. Владелец: Everspin Technologies Inc. Дата публикации: 2023-09-06.

Systems and methods for monitoring and managing memory devices

Номер патента: US20240006011A1. Автор: HAN Kyu Lee,Sanjeev Aggarwal,Sumio Ikegawa,Syed M. Alam,Dimitri Houssameddine,Iftekhar Rahman,Pedro Sanchez,Frederick Charles Neumeyer,Jason Janesky,Hamid ALMASI,Cristian P. Masgras. Владелец: Everspin Technologies Inc. Дата публикации: 2024-01-04.

Method and system for controlling a memory device

Номер патента: US20230333627A1. Автор: Zhi Gao,Suneel Varma Uppalapati Venkata. Владелец: Imagination Technologies Ltd. Дата публикации: 2023-10-19.

Non-volatile memory device, storage device and program method thereof

Номер патента: US20210225451A1. Автор: Jun-Ho SEO,Sangwon Hwang,Haneol JANG,Suk-Eun Kang,Youngwook JEONG,Wanha HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-07-22.

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Номер патента: US20140119107A1. Автор: Soo-ho Cha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-01.

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Номер патента: US20130201777A1. Автор: Jung-Bae Lee,Sang-Ho Shin,Min-Jeung Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-08-08.

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Номер патента: US20170069389A1. Автор: Yoon Kim,Sang-Soo Park,Won-Bo Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-09.

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Номер патента: US20210090657A1. Автор: AHN Seongho. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-03-25.

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Номер патента: US20220139459A1. Автор: AHN Seongho. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2022-05-05.

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Номер патента: US20140198581A1. Автор: Kim Eun-Kyoung,LEE Jong-Chul,LEE Won-chul,YOON Myoung-Won,KWONG OH-SUK. Владелец: . Дата публикации: 2014-07-17.

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Номер патента: US20200111529A1. Автор: Shin Hyun-Jin. Владелец: . Дата публикации: 2020-04-09.

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Номер патента: US20160124641A1. Автор: YOON SANG-YONG,KIM KYUNG-RYUN. Владелец: . Дата публикации: 2016-05-05.

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Номер патента: US20160124642A1. Автор: Jang Joon-Suc,KIM KYUNG-RYUN. Владелец: . Дата публикации: 2016-05-05.

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Номер патента: US20150131393A1. Автор: KIM Do-geun,Lim Sun-Young,LEE DONG-YANG,Jung Ju-yun,Jung Bu-il,CHOO Min-Yeab,PARK MI-KYOUNG,Han Hyuk. Владелец: . Дата публикации: 2015-05-14.

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Номер патента: US20200143885A1. Автор: Kim Dae-Jin,Baek Jong-Nam,Park Sang-Ryong,JANG SEJEONG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-05-07.

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Номер патента: US20170162270A1. Автор: Park Sang-Soo,PARK Jong-Chul,YOO Hyun-Young. Владелец: . Дата публикации: 2017-06-08.

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Номер патента: US20170206978A1. Автор: JOO Sang-Hyun,IM JAE-WOO. Владелец: . Дата публикации: 2017-07-20.

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Номер патента: US20180246678A1. Автор: KANG Uk-song,CHA SANG-UHN,CHUNG HOl-JU. Владелец: . Дата публикации: 2018-08-30.

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Номер патента: US20170344486A1. Автор: Myung-June Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-30.

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Номер патента: US20200402551A1. Автор: Jaegon Lee,Sunyoung LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-12-24.

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Номер патента: KR102295528B1. Автор: 김동찬,김윤,이지상. Владелец: 삼성전자 주식회사. Дата публикации: 2021-08-30.

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Номер патента: KR102263046B1. Автор: 김경륜,윤상용. Владелец: 삼성전자주식회사. Дата публикации: 2021-06-09.

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Номер патента: KR102420588B1. Автор: 박종철,박상수,유현영. Владелец: 삼성전자주식회사. Дата публикации: 2022-07-13.

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Номер патента: KR101878455B1. Автор: 박상수,이승재,송중호,임재우,이진엽. Владелец: 삼성전자주식회사. Дата публикации: 2018-07-16.

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Номер патента: US20070187744A1. Автор: Franz Kreupl. Владелец: Qimonda AG. Дата публикации: 2007-08-16.

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Номер патента: KR102219293B1. Автор: 이영택,변대석,윤치원,박현국. Владелец: 삼성전자 주식회사. Дата публикации: 2021-02-23.

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Номер патента: US20130176803A1. Автор: Jong-ho Lee,Kyu-Chang KANG,Jae-Youn Youn,Sang-Jae Rhee,Hyo-chang KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-11.

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Номер патента: US20160027495A1. Автор: Hyun-Ki Kim,Hyung-Sik You. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-01-28.

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Номер патента: EP3651155B1. Автор: Dae-Jin Kim,Jong-Nam Baek,Sejeong Jang,Sang-Ryong PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-16.

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Номер патента: US20090244761A1. Автор: Yoshinori Inoue. Владелец: Fujitsu Ltd. Дата публикации: 2009-10-01.

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Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120002457A1. Автор: KANDA Kazushige. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120002495A1. Автор: SUH Sung-Dong,HA Kyoung-Ho,Song Ki-Jae,KIM Seong-gu,JOE In-sung,Cho Soo-Haeng,Kim Yeoung-kum. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001246A1. Автор: . Владелец: Micron Technology Inc.. Дата публикации: 2012-01-05.

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Номер патента: TW515030B. Автор: Chun-Mai Liu,Lian-Yi Liu,Ken Su,Albert V Kordesch. Владелец: Winbond Electronics Corp. Дата публикации: 2002-12-21.

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Номер патента: TW327251B. Автор: Horng-Huei Tzeng. Владелец: Vanguard Int Semiconduct Corp. Дата публикации: 1998-02-21.

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Номер патента: US20120126306A1. Автор: . Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-05-24.

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Номер патента: JP2007088235A. Автор: 泰明 小平,Yasuaki Kodaira. Владелец: Seiko Epson Corp. Дата публикации: 2007-04-05.

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Номер патента: US20130122651A1. Автор: Sorada Haruyuki,Mikawa Takumi,Fujii Satoru. Владелец: Panasonic Corporation. Дата публикации: 2013-05-16.

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Номер патента: JP3139345B2. Автор: 葛原　　剛,則行 岩森. Владелец: Denso Corp. Дата публикации: 2001-02-26.

Manufacturing method of semiconductor nonvolatile memory device

Номер патента: JP3446510B2. Автор: 博之 守屋. Владелец: Sony Corp. Дата публикации: 2003-09-16.

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Номер патента: JP3450539B2. Автор: 法晴 松井,仁 荒木. Владелец: Toshiba Corp. Дата публикации: 2003-09-29.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP2598092B2. Автор: 正信 吉田. Владелец: Fujitsu Ltd. Дата публикации: 1997-04-09.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3028984B2. Автор: 広宣 中尾. Владелец: ROHM CO LTD. Дата публикации: 2000-04-04.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3578243B2. Автор: 浩 青笹. Владелец: Sony Corp. Дата публикации: 2004-10-20.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3054530B2. Автор: 栄一 三坂. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2000-06-19.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3309960B2. Автор: 浩樹 白井. Владелец: NEC Corp. Дата публикации: 2002-07-29.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP3433016B2. Автор: 正二 坂村. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2003-08-04.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP2994927B2. Автор: 幸弘 大谷. Владелец: Sanyo Electric Co Ltd. Дата публикации: 1999-12-27.

Manufacturing method of nonvolatile semiconductor memory device

Номер патента: JP2610709B2. Автор: あきつ 鮎川,▲祥▼光 山内. Владелец: Sharp Corp. Дата публикации: 1997-05-14.

Image display system and manufacturing method of thin-film memory device

Номер патента: TW200836348A. Автор: Ryan Lee,Hanson Liu,Feng-Yi Chen. Владелец: TPO Displays Corp. Дата публикации: 2008-09-01.

Image display system and manufacturing method of thin-film memory device

Номер патента: TWI332710B. Автор: Ryan Lee,Hanson Liu,feng yi Chen. Владелец: Chimei Innolux Corp. Дата публикации: 2010-11-01.

The manufacture method of the flash memory device

Номер патента: TW402815B. Автор: Hung-Huei Tzeng. Владелец: Vanguard Int Semiconduct Corp. Дата публикации: 2000-08-21.

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Номер патента: TW201042454A. Автор: Ikuo Yamaguchi,Takahiko SUGAHARA,Tetsuo Furuichi,Takashi Oshikiri. Владелец: Mega Chips Corp. Дата публикации: 2010-12-01.

Method of forming metal oxide dielectric film and method of manufacturing semiconductor memory device

Номер патента: TW200727361A. Автор: Hiroyuki Kitamura,Hiromu Yamaguchi. Владелец: Elpida Memory Inc. Дата публикации: 2007-07-16.

Method of forming metal oxide dielectric film and method of manufacturing semiconductor memory device

Номер патента: TWI315087B. Автор: Hiroyuki Kitamura,Hiromu Yamaguchi. Владелец: Elpida Memory Inc. Дата публикации: 2009-09-21.

Method of manufacturing flash memory device

Номер патента: TW201135871A. Автор: Chih-Jen Huang,Chien-Hung Chen. Владелец: United Microelectronics Corp. Дата публикации: 2011-10-16.

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Номер патента: US20120039132A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-02-16.

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Номер патента: US20130016558A1. Автор: Lee Hae-Bum,Lee Bong-Yong,Ahn Jung-Ro,Kim Eui-Do,Jang Houng-Kuk,Shin Kyung-Jun,Yoon Tae-Hyun. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-01-17.

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Номер патента: US20130159733A1. Автор: KIM MIN-KWON,LEE JAE-BUM,JANG Hyoung-Suk,LEE Seok-Heon. Владелец: . Дата публикации: 2013-06-20.

SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20130077379A1. Автор: Matsudaira Masaharu,Terai Masayuki. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-03-28.

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