Nonvolatile memory device and program method of the same.

Nonvolatile memory device and program method of the same

Номер патента: US20210217477A1
Опубликовано: 15-07-2021
Автор(ы): Byoung-taek Kim, Ji-Ho Cho, Sun-gyung HWANG, Won-Bo Shim, Yong-Seok Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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