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Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same

Номер патента: US09583485B2
Опубликовано: 28-02-2017
Автор(ы): Chai-Wei Chang, Che-Cheng Chang, Po-Chi WU, Yi-Cheng Chao
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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