PROCESS FOR THE MANUFACTURE OF HIGH-RESPONSE IGFET FIELD-EFFECT TRANSISTORS (IGFET) IN HIGH DENSITY INTEGRATED CIRCUITS
Номер патента: FR2568058B1
Опубликовано: 18-08-1989
Автор(ы): Gianfranco Cerofolini
Принадлежит: ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA
Опубликовано: 18-08-1989
Автор(ы): Gianfranco Cerofolini
Принадлежит: ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA
Method of manufacturing field-effect transistor array by direct carbon nanotube printing and field effect transistor array manufactured by the same
Номер патента: US20240204078A1. Автор: Yoonhee Lee,Hongki KANG,Soohyun PARK,Minhye Shin. Владелец: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2024-06-20.