Ambipolar vertical field effect transistor
Номер патента: EP2926376A1
Опубликовано: 07-10-2015
Автор(ы): Andrew Gabriel Rinzler, BO LIU, Mitchell Austin Mccarthy
Принадлежит: University Of Florida, University of Florida Research Foundation Inc
Опубликовано: 07-10-2015
Автор(ы): Andrew Gabriel Rinzler, BO LIU, Mitchell Austin Mccarthy
Принадлежит: University Of Florida, University of Florida Research Foundation Inc
Реферат: Various examples are provided for ambipolar vertical field effect transistors (VFETs). In one example, among others, an ambipolar VFET includes a gate layer; a source layer that is electrically percolating and perforated; a dielectric layer; a drain layer; and a semiconducting channel layer. The semiconducting channel layer is in contact with at least a portion of the source layer and at least a portion of the dielectric layer and the source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier. Another example includes an ambipolar vertical field effect transistor including a dielectric surface treatment layer. The semiconducting channel layer is in contact with at least a portion of the source layer and at least a portion of the dielectric surface treatment layer and where the source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.
Semi-metal tunnel field effect transistor
Номер патента: WO2017046024A1. Автор: James Greer,Lida ANSARI,Giorgos FAGAS. Владелец: University College Cork. Дата публикации: 2017-03-23.