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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 236. Отображено 174.
21-02-2013 дата публикации

Vorrichtung zur Halterung von Werkstücken, insbesondere bei der Oberflächenbearbeitung von Linsen, Halbleitern und dergleichen unter Vakuum oder Atmosphäre, mittels Ionenstrahlen, Verwendung der Vorrichtung sowie Bearbeitungsvorrichtung

Номер: DE102007057950B4
Принадлежит: NTG NEUE TECHNOLOGIEN GMBH & CO KG

Vorrichtung zur Halterung von Werkstücken mit wenigstens einer mittels einer Antriebseinrichtung (2) betätigbaren Halterung (3) für einen das zu bearbeitende Werkstück aufnehmenden Werkstückträger (4), wobei die wenigstens eine Halterung (3) verfahrbar an einer Abstützeinrichtung (5) angeordnet ist, wobei die wenigstens eine Halterung (3) zur Auf- und Entnahme des Werkstückträgers (4) mittels der Antriebseinrichtung (2) gegen die Kraft eines federelastischen Mittels (6) in eine untere Endstellung verfahrbar ist und bei Außerwirkstellung befindlicher Antriebseinrichtung (2) mittels der federelastischen Mittel (6) den Werkstückträger (4) in Anlagestellung an wenigstens einem an der Abstützeinrichtung (5) angeordneten Anschlagmittel (8) hält, dadurch gekennzeichnet, dass die wenigstens eine Halterung (3) als Auflageträger (3) für den Werkstückträger (4) ausgebildet ist und dass eine Positioniereinrichtung (19) zum Positionieren bzw. Einstellen einer Winkelposition des Werkstückträgers (4) ...

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15-06-2011 дата публикации

SAMPLES FOR THE TRANSMISSION ELECTRON MICROSCOPY

Номер: AT0000511638T
Принадлежит:

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15-07-2000 дата публикации

ION GUN FOR THE PRODUCTION OF IONS FROM GAS OR STEAM

Номер: AT0000194724T
Принадлежит:

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10-12-2013 дата публикации

DIRECTED MULTI-DEFLECTED ION BEAM MILLING OF A WORK PIECE AND DETERMINING AND CONTROLLING EXTENT THEREOF

Номер: KR1020130135320A
Автор:
Принадлежит:

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18-02-2003 дата публикации

Process for minimizing electrostatic damage and pole tip recession of magnetoresistive magnetic recording head during pole tip trimming by focused ion beam milling

Номер: US0006521902B1

The improved method for trimming a magnetic head utilizing a FIB tool includes a step of aligning the FIB tool milling boxes without imaging critical pole tip components and structure. The method includes the creation of an alignment box that is disposed in a known, fixed orientation relative to the FIB tool milling boxes. The FIB tool is aligned by imaging only the alignment box and by moving the alignment box relative to known pole tip structural characteristics that are disposed away from the critical pole tip components. The alignment box is visually aligned on non-sensitive pole tip components in such a manner that the milling boxes will be properly aligned relative to the sensitive pole tip components. FIB tool milling is thereafter performed within the milling boxes which have been accurately aligned without imaging of sensitive pole tip components.

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15-06-2003 дата публикации

PROCEDURE FOR THE PRODUCTION ATOMIC OF SHARP ONES GUMPTION BLADE.

Номер: AT0000240821T
Принадлежит:

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01-06-2006 дата публикации

METHOD AND APPARATUS FOR CONTROLLING TOPOGRAPHICAL VARIATION ON A MILLED CROSS-SECTION OF A STRUCTURE

Номер: WO2005050691A3
Принадлежит: FEI Co, James P Nadeau, Jason H Arjavac, Pei Zou

An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rate of the structure at those higher incidence angles. (702) Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles. (702)

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02-04-1998 дата публикации

ION SOURCE FOR GENERATING IONS OF A GAS OR VAPOUR

Номер: WO1998013851A1
Принадлежит:

An ion source for generating ions of a gas or vapour, especially for thinning solid state samples, comprising a housing (28), means for introducing (31) said gas or vapour into said housing (28), an anode (3) positioned within said housing (28), said anode (3) having a rotationally symmetrical cavity (21) being open at both sides along the axis (30) of the source, first and second electrooptical mirror means (1, 2; 5, 4) disposed along said axis (30) and defining therebetween a space within which said anode (3) is positioned, said first and second electrooptical mirror means (1, 2; 5, 4) creating an electrostatic field so as to cause electrons to oscillate between them, wherein at least one of said first and second electrooptical mirror means (1, 2; 5, 4) being apertured for exit therethrough of a fraction of ions generated in said space. The ion source further comprises means for generating electrons (12) disposed at one of said sides of said cavity (21) and positioned outside said space ...

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03-04-2008 дата публикации

Directed Multi-Deflected Ion Beam Milling of a Work Piece and Determining and Controlling Extent Thereof

Номер: US2008078750A1
Принадлежит:

Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly; and an ion beam directing and multi-deflecting assembly, for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.

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04-01-2018 дата публикации

SYSTEM AND METHOD FOR PERFORMING NANO BEAM DIFFRACTION ANALYSIS

Номер: US20180005798A1
Принадлежит:

A system for performing nano beam diffraction (NBD) analysis, includes a focused ion beam (FIB) device for preparing a transmission electron microscopy (TEM) sample, a broad beam ion mill for milling the TEM sample to remove a surface portion of the TEM sample, and a strain analyzer for performing NBD analysis on the milled TEM sample to acquire diffraction data. 1. A system for performing nano beam diffraction (NBD) analysis , comprising:a focused ion beam (FIB) device for preparing a transmission electron microscopy (TEM) sample;a broad beam ion mill for milling the TEM sample to remove a surface portion of the TEM sample; anda strain analyzer for performing NBD analysis on the milled TEM sample to acquire diffraction data.2. The system of claim 1 , wherein the milling of the TEM sample exposes an underlying surface of the TEM sample claim 1 , and the strain analyzer uses a TEM camera image resolution of at least 4000×4000 pixels to acquire the diffraction data on the underlying surface.3. The system of claim 1 , wherein the surface portion removed by the broad beam ion mill comprises a portion of the surface of the TEM sample which has been damaged by the FIB device.4. The system of claim 1 , wherein the TEM sample comprises a parallel-sided sample claim 1 , and the broad beam ion mill removes a surface portion from two parallel sides of the parallel-sided sample.5. The system of claim 1 , wherein the removed surface portion comprises a thickness in a range from 1 nm to 45 nm.6. The system of claim 1 , wherein the surface portion comprises at least 10% of a thickness of the TEM sample.7. The system of claim 1 , wherein the diffraction data comprises a sensitivity which is less than 0.1%.8. The system of claim 1 , wherein the diffraction data comprises strain measurement data.9. The system of claim 1 , wherein the TEM sample is extracted from a semiconductor structure.10. The system of claim 9 , wherein the semiconductor structure comprises one of a semiconductor ...

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21-05-2003 дата публикации

Methods for making atomically sharp edged cutting blades.

Номер: EP0001092515B1
Автор: NEWMAN, Martin H.
Принадлежит: NEWMAN, Martin H.

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15-04-2001 дата публикации

ATOMICALLY SHARP EDGED CUTTING BLADES AND METHODS FOR MAKING SAME

Номер: CA0002323259A1
Автор: HEWMAN, MARTIN H.
Принадлежит:

... ▓▓▓▓ An atomically sharpened cutting edge for a cutting instrument is▓described. Focused ion beam (FIB) milling provides the atomically sharp▓cutting edge. In one embodiment, a cutting edge blank is provided and milled▓by FIB to form an atomically sharp edge. In another embodiment, a metal▓cutting edge blank is provided, a layer of a harder material is provided on at▓least one side of the blank and it is milled by FIB to form an atomically ▓sharp▓edge.▓ ...

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05-05-2005 дата публикации

Ion beam apparatus and sample processing method

Номер: US20050092922A1
Принадлежит:

For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.

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13-12-2007 дата публикации

Atomically sharp edged cutting blades and methods for making same

Номер: US2007283578A1
Принадлежит:

An atomically sharpened cutting edge for a cutting instrument is described. Focused ion beam (FIB) milling provides the atomically sharp cutting edge. In one embodiment, a cutting edge blank is provided and milled by FIB to form an atomically sharp edge. In another embodiment, a metal cutting edge blank is provided, a layer of a harder material is provided on at least one side of the blank and it is milled by FIB to form an atomically sharp edge.

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20-12-1995 дата публикации

Method for making specimen and apparatus thereof

Номер: EP0000687897A1
Принадлежит:

The present invention is intended to provide a method and an apparatus for making a specimen for use in observation through a transparent electron microscope, including a step for milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step for observing a mark for detection of position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the step for milling, and a step for compensating positional drift of the focused ion beam during said step for milling in accordance with a result of the observation. The present invention provides an effect to strikingly raise the efficiency of TEM observation since a specimen for use in TEM observation can be made by precisely milling a thin ...

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07-07-2005 дата публикации

Backside unlayering of MOSFET devices for electrical and physical characterization

Номер: US2005148157A1
Принадлежит:

A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.

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01-02-2017 дата публикации

Covering material stripping method and stripping device using ion irradiation

Номер: TW0201705180A
Принадлежит:

The present invention addresses the problem of providing a stripping method allowing a tool, a mechanical component, or the like, which has been coated with an inorganic material such as PCD (polycrystalline diamond), to be stripped in a manner that enables regeneration and use thereof. This stripping method allows stripping to be executed at an economical speed with no dead angle occurring readily with respect to the base material to be stripped (covering material) during ion irradiation, and with no brittle phase occurring readily in the base material (metal member) due to the temperature. The problem can be solved by the stripping method of peeling off a coating from a metal member by irradiating an ion flow onto a covering material resulting from the attachment of the coat comprising an inorganic material on the surface of the metal member. The stripping method is characterized by: setting the covering material in an ion flow concentrated portion where two or more ion flows overlap; ...

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27-04-2006 дата публикации

Movement drive for use in e.g. ion processing equipment, has pendulum holding devices with axles that intersect at right angles, such that oscillating motion of torque motors, arranged outside vacuum container, is directly realized at axles

Номер: DE102004010535B4
Принадлежит: HATLE JAROSLAV JAN, HATLE, JAROSLAV JAN

The drive has pendulum holding devices (18, 24) for a lens to be treated and an ion source, respectively. The devices have pendulum axles (20, 26) that are actuated by torque motors, which are arranged outside a vacuum container (12). The axles intersect at right angles, such that oscillating motion of the motors is directly realized at the axles. The axle (20) spherically cuts the center of curvature of the lens.

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17-04-1998 дата публикации

Ion source for generating ions of a gas or vapour

Номер: AU0007092396A
Принадлежит:

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01-12-2009 дата публикации

ATOMICALLY SHARP EDGED CUTTING BLADES AND METHODS FOR MAKING SAME

Номер: CA0002323259C
Автор: HEWMAN, MARTIN H.
Принадлежит: HEWMAN, MARTIN H.

An atomically sharpened cutting edge for a cutting instrument is described. Focused ion beam (FIB) milling provides the atomically sharp cutting edge. In one embodiment, a cutting edge blank is provided and milled by FIB to form an atomically sharp edge. In another embodiment, a metal cutting edge blank is provided, a layer of a harder material is provided on at least one side of the blank and it is milled by FIB to form an atomically sharp edge.

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15-06-2001 дата публикации

ATOMICALLY SHARP EDGED CUTTING BLADES AND METHODS FOR MAKING THE SAME

Номер: KR20010050739A
Автор: NEWMAN, MARTIN H.
Принадлежит:

PURPOSE: To provide an atomically sharp edge cutting blade for a cutting device. CONSTITUTION: A novel cutting edge is formed by evaporating a coating to the cutting blade edge of a cutting blade blank and processing with a focused ion beam. When the coating(6) is applied to one side only, as a surplus coating material(6) is usually evaporated on abase bottom(11) in the coating process, the surplus coating material is removed. After that, the blank(5) is sharpened by the focused ion beam(FIB) process, and a sharp edge(cutting blade edge)(9) with an atomically sharp edge cutting blade is produced. As for a both-side inclined cutting tool in which both sides of the blank are tapered and coated with a hard material, each coating surface of the blank is mulled with the focused ion beam(FIB) and a novel sharp edge part with an atomically sharp both-side inclined blade edge is produced. © KIPO & JPO 2002 ...

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24-04-2012 дата публикации

Method and apparatus for controlling topographical variation on a milled cross-section of a structure

Номер: US0008163145B2

An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

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16-08-2005 дата публикации

Method and apparatus for controlling topographical variation on a milled cross-section of a structure

Номер: TW0200527524A
Принадлежит:

An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

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01-10-2009 дата публикации

Vorrichtung zur Strahlbearbeitung von Werkstücken, Ionenstrahlbearbeitungsanlage

Номер: DE102007048559B4

Vorrichtung zur Strahlbearbeitung, insbesondere mit Ionenstrahlen, von Oberflächen von Werkstücken (4), insbesondere Linsen, mit einer Werkstückhalterung (10) und mit einem Bearbeitungskopf (20), wobei Werkstückhalterung (10) und Bearbeitungskopf (20) relativ zueinander verfahrbar sind, wobei im Bearbeitungszustand die Werkstückhalterung (10) entlang einer ersten Achse (Y) verfahrbar ist und der Bearbeitungskopf (20) entlang einer von der ersten Achse (Y) verschiedenen zweiten Achse (X) verfahrbar ist, dadurch gekennzeichnet, dass die Werkstückhalterung (10) um eine erste Schwenkachse (A) schwenkbar ist, wobei eine Schleuse (28) für die Werkstücke (4) vorgesehen ist, wobei eine durch die erste Achse (Y) und der ersten Schwenkachse (A) der Werkstückhalterung (10) gebildete Ebene eine Schleusenöffnung (30) der Schleuse (28) schneidet.

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21-02-2017 дата публикации

METHOD OF ANALYZING DISTRIBUTION OF COMPONENTS AND PORES IN SECONDARY BATTERY ELECTRODE AND COMPOSITION THEREFOR

Номер: KR1020170019146A
Принадлежит:

The present invention relates to a method of analyzing distribution of components and ores in a secondary battery electrode, and a composition therefor. Components and pores in a secondary battery electrode is able to definitely be divided on an electron microscopy image, and distribution of the components in the electrode is able to be observed. As such, performance of the electrode is able to be expected as a result. COPYRIGHT KIPO 2017 (AA) Positive electrode active material (BB) Conductive material + binder ...

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17-08-2000 дата публикации

IONENQUELLE ZUR ERZEUGUNG VON IONEN AUS GAS ODER DAMPF

Номер: DE0069609358D1
Принадлежит: BARNA ARPAD, BARNA, ARPAD

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13-05-2009 дата публикации

Method and apparatus for producing three dimensional nano and micro scale structures

Номер: GB0000905571D0
Автор:
Принадлежит:

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07-08-2018 дата публикации

By ion irradiation of the coat one of the trampling trampling method and device

Номер: CN0106796863B
Автор:
Принадлежит:

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30-06-2005 дата публикации

Atomically sharp edged cutting blades and methods for making same

Номер: AU0000782041B2
Принадлежит: Becton Dickinson and Co

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04-05-2006 дата публикации

APPARATUS AND METHOD FOR POLISHING GEMSTONES AND THE LIKE

Номер: WO000002006047611A3
Принадлежит:

The invention comprises a two-step process for achieving an ultra-polish finish on materials such as gemstones and the like by first performing a chemical-mechanical polishing of the material using an intermetallic material as the grinding medium followed by a gas cluster ion beam (GCIB) treatment. The intermetallic grinding wheel is formed of carbide-forming metals in the form of intermetallics consisting of one kind or more of elements selected from the group of Al, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Os, Ir and Pt, and one kind or more of elements selected from the group of Ti, V, Zr, Nb, Mo, Hf, Ta and W. The gas cluster ion beams are comprised of gas clusters having nano-sized aggregates of materials that are gaseous under conditions of standard temperature and pressure. Such clusters can be ionized by electron bombardment or other means, permitting the gas clusters to be formed into directed beams of known and controllable energy. The larger sized gas clusters are the most useful ...

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08-12-2005 дата публикации

Dual angle milling for current perpendicular to plane (CPP) magnetoresistive sensor definition

Номер: US2005269288A1
Принадлежит:

A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.

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02-03-2006 дата публикации

DIRECTED MULTI-DEFLECTED ION BEAM MILLING OF A WORK PIECE AND DETERMINING AND CONTROLLING EXTENT THEREOF

Номер: WO2006021958A2
Принадлежит:

Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly; and an ion beam directing and multi-deflecting assembly, for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.

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17-04-2018 дата публикации

Method for preparing cross-sections by ion beam milling

Номер: US9947507B2

The disclosure provides a method for preparing a cross-section of a sample by milling with a focused ion beam. The cross-section is to be prepared at a pre-defined position. The method includes excavating a trench by milling in a first milling direction. The first milling direction leads away from the position of the cross-section to be prepared. The method also includes excavating the cross-section by enlarging the trench by milling in the reversed milling direction. The second milling direction leads towards the position of the cross-section to be prepared, whereupon the milling is completed at the position where the cross-section is to be cut. The desired largest milling depth is achieved at the completion of this milling step.

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21-11-2011 дата публикации

Method and apparatus for controlling topographical

Номер: TWI353012B
Принадлежит: FEI CO, FEI COMPANY

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06-10-1998 дата публикации

Apparatus for creating three-dimensional physical models of characteristics of microscopic objects

Номер: US0005818042A
Автор:
Принадлежит:

Apparatus for creating scaled three-dimensional physical models of characteristics of microscopic objects, includes a transducer apparatus including a transducer for creating first electrical signals representative of the magnitude of a physical characteristic of the microscopic object at a selected point within a selected area thereof, the first electrical signals having a first component defining said selected point and a second component related to the magnitude of the physical characteristic, a material shaping apparatus configured to create a physical model in a workspace, the workspace having an area related to the selected area of the microscopic object by a first selected scale factor, the material shaping apparatus including apparatus responsive to second electrical signals representing x, y, and z co-ordinates in the workspace for directing the formation of the physical model; and control apparatus, connected to the transducer apparatus and the material shaping apparatus, for ...

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07-06-2018 дата публикации

이온 조사에 의한 피복재의 탈막 방법 및 탈막 장치

Номер: KR0101864877B1

PCD(다결정 다이아몬드)와 같은 무기물로 피복된 공구나 기계 부품 등을 재생 사용이 가능해지도록 탈막하는 방법으로서, 이온 조사시에 피탈막 베이스재(피복재)에 사각을 발생시키기 어렵고, 온도적으로 베이스재(금속제 부재)에 취성 상을 발생시키기 어려우며 경제적인 속도로 탈막이 실행될 수 있는 탈막 방법을 제공하는 것을 과제로 한다. 금속제 부재의 표면에 무기물로 이루어지는 피막이 붙어 이루어지는 피복재(1)에 이온류(7)를 조사하여 상기 금속제 부재로부터 상기 피막을 박리하는 탈막 방법으로서, 피복재(1)를 2개 이상의 이온류(7)가 겹치는 이온류 집중부(7A)에 설치하고, 피복재(1)에 양음 바이어스를 부가하지 않고 피복재(1)에 이온류(7)를 조사하는 것을 특징으로 하는 탈막 방법에 따라 상기 과제를 해결할 수 있다.

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16-06-2021 дата публикации

Milling a multi-layered object

Номер: TW202123295A
Принадлежит: 以色列商應用材料以色列公司

一種銑削機,非暫態電腦可讀媒體,以及用於銑削多層式物件的方法。該方法可以包括步驟:(i)接收或決定與銑削過程有關的銑削參數,該銑削參數可以包括下列至少二者:(a)散焦強度,(b)銑削過程的持續時間,(c)在銑削過程中提供給一物鏡的偏置電壓,(d)離子束能量,及(e)離子束電流密度;以及,(ii)透過在保持銑削參數的同時應用銑削過程來形成一凹坑,其中該應用銑削過程的步驟,可包括將散焦的離子束引導到多層式物件上的步驟。

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07-10-2010 дата публикации

METHOD AND APPARATUS FOR PRODUCING THREE DIMENSIONAL NANO AND MICRO SCALE STRUCTURES

Номер: WO2010112827A2
Автор: COX, David

A three-dimensional milling method and apparatus is disclosed for milling micrometre and a nanometre scale three-dimensional structures. The apparatus includes an ion column (12) operable to generate a milling beam onto a substrate (20) held on an instrument stage (18). A patterning computer (22) is operable to control the ion column (12) to generate varying ion beam and/or dwell times or to produce a plurality of milling passes, in which subsequent passes overlap previous passes at least partially to create three-dimensional structures. Optionally, an SEM column (14) may be provided.

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17-05-2023 дата публикации

ION BEAM SPECIMEN MACHINING DEVICE AND METHOD

Номер: EP4120318A3
Принадлежит:

Provided is a specimen (2) machining device (100) including: an illumination system (40) that includes a first illumination device and a second illumination device which illuminate a specimen (2) from directions different from each other; a camera (60) that photographs the specimen (2); and a processing unit (70) that controls the illumination system (40) and the camera (60), and acquires a machining control image which is used for controlling an ion source (10) and a display image which is displayed on a display unit. The processing unit (70) performs processing for: controlling the illumination system (40) to illuminate the specimen (2) under a machining illumination condition; acquiring the machining control image by controlling the camera (60) to photograph the specimen (2) illuminated under the machining control illumination condition; controlling the ion source (10) based on the machining control image; controlling the illumination system (40) to illuminate the specimen (2) under ...

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17-01-2008 дата публикации

Surface processing device for laser polishing workpieces comprises an evacuated processing chamber containing a workpiece holder and an electron beam source for producing an electron beam for processing the surface of a workpiece

Номер: DE102006032303A1
Принадлежит:

Surface processing device comprises an evacuated processing chamber (2) containing a workpiece holder (6) and an electron beam source (8) for producing an electron beam for processing the surface of a workpiece. The electron beam source is connected to a positioning unit (10) which moves the source inside the processing chamber.

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29-09-2005 дата публикации

Movement drive for use in e.g. ion processing equipment, has pendulum holding devices with axles that intersect at right angles, such that oscillating motion of torque motors, arranged outside vacuum container, is directly realized at axles

Номер: DE102004010535A1
Принадлежит:

The drive has pendulum holding devices (18, 24) for a lens to be treated and an ion source, respectively. The devices have pendulum axles (20, 26) that are actuated by torque motors, which are arranged outside a vacuum container (12). The axles intersect at right angles, such that oscillating motion of the motors is directly realized at the axles. The axle (20) spherically cuts the center of curvature of the lens.

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01-12-1998 дата публикации

METHOD FOR MAKING SPECIMEN AND APPARATUS THEREOF

Номер: KR0000155242B1

반도체소자 등의 특정장소를 투과전자 현미경으로 관찰하기 위한 시료작성방법에 관한 것으로, 특히 접속이온빔가공에 의한 시료작성방법 및 그 장치에 관한 것으로서, 접속이온빔의 가공에 의해 TEM시료를 실패하는 일없이 적절한 두께로 확실하게 마무리할 수 있는 방법과 실용성이 있는 경제적인 장치를 제공하기 위해, 고휘도 이온빔을 발생시키는 고휘도이온원, 발생시킨 고휘도 이온빔을 미세한 스폿형상으로 집속시켜서 시료상에 주사해서 조사하는 이온빔 조사수단, 집속한 이온빔의 조사에 의해 시료에서 발생하는 2차하전입자를 검출하는 2차하전입자 검출수단, 검출한 2차하전입자의 검출신호에 따라서 2차하전입자상을 표시하는 2차하전입자상 표시수단, 집속한 이온빔을 조사해서 시료의 일부를 박막형상으로 가공하는 도중에 시료의 가공의 위치검출용 마크가 형성된 표면의 2차하전입자상을 표시할 때 이 2차하전입자상에 박막형상으로 가공하는 가공면이 포함되지 않도록 집속한 이온빔의 시료상으로의 조사영역을 제어하는 조사영역 제어수단 및 2차하전입자상 표시수단에 의해 표시된 시료표면의 가공의 위치검출용 마크에 따라서 가공의 도중에 집속이온빔의 위치드리프트를 보정하는 수단을 구비한 시료작성장치를 사용해서, 시료에 집속이온빔을 주사해서 조사하는 것에 의해 시료의 일부를 투과전자 현미경으로 관찰할 수 있는 박막형상으로 가공하는 스텝, 가공하는 스텝의 도중에 하전입자빔을 박막형상으로 가공하는 부분에 조사하는 일없이 시료상에 주사해서 조사하고, 시료에 마련한 위치검출용 마크를 2차하전입자상으로써 관찰하는 스텝 및 관찰한 결과에 따라서 가공하는 스텝의 도중에 집속이온빔의 위치드리프트를 보정하는 스텝을 포함한다. The present invention relates to a sample preparation method for observing a specific place such as a semiconductor device with a transmission electron microscope, and more particularly, to a sample preparation method using a connected ion beam processing and a device thereof, without failing a TEM sample by processing a connected ion beam. In order to provide a method that can be reliably finished to a suitable thickness and economical device with practicality, a high brightness ion source for generating a high brightness ion beam and an ion beam for scanning and irradiating the sample by focusing the generated high brightness ion beam into a fine spot shape. Irradiation means, secondary charged particle detection means for detecting secondary charged particles generated in a sample by irradiation of a focused ion beam, secondary charged particle image display means for displaying secondary charged particle images in accordance with a detected signal of the detected secondary charged particles, During the processing of a portion of the sample into a thin film by irradiating the focused ion beam, Control of the irradiation area for controlling the ...

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06-05-2010 дата публикации

METHOD AND APPARATUS FOR CONTROLLING TOPOGRAPHICAL VARIATION ON A MILLED CROSS-SECTION OF A STRUCTURE

Номер: US20100108506A1
Принадлежит: FEI COMPANY

An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

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08-02-2012 дата публикации

METHOD AND APPARATUS FOR PRODUCING THREE DIMENSIONAL NANO AND MICRO SCALE STRUCTURES

Номер: EP2415066A2
Автор: COX, David

A three-dimensional milling method and apparatus is disclosed for milling micrometre and a nanometre scale three-dimensional structures. The apparatus includes an ion column (12) operable to generate a milling beam onto a substrate (20) held on an instrument stage (18). A patterning computer (22) is operable to control the ion column (12) to generate varying ion beam and/or dwell times or to produce a plurality of milling passes, in which subsequent passes overlap previous passes at least partially to create three-dimensional structures. Optionally, an SEM column (14) may be provided.

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26-04-2001 дата публикации

Atomtically sharp edged cutting blades and methods for making same

Номер: AU0006412100A
Принадлежит:

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24-05-2018 дата публикации

Vorrichtung und Verfahren zum Herstellen einer Festkörper-Immersionslinse unter Verwendung einer binären Bitmap Abtragungsschablone

Номер: DE102012204109B4

Eine Vorrichtung zum Herstellen einer Festkörper-Immersionslinse (SIL) in einem optischen Medium, die Vorrichtung aufweisend:einen Abtragungskopf, welcher zum Generieren eines fokussierten Ionenstrahls konfiguriert ist, undeine binäre Bitmap Abtragungsschablone, welche Positionen definiert, an denen der fokussierte Ionenstrahl auf eine Oberfläche des optischen Mediums projiziert wird, wobei die Positionen, an denen der fokussierte Ionenstrahl auf die Oberfläche des optischen Mediums auftrifft, zufällig über aufeinanderfolgende Raster Scans der Oberfläche des optischen Mediums verteilt sind.

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30-04-2009 дата публикации

Vorrichtung zur Strahlbearbeitung von Werkstücken, Ionenstrahlbearbeitungsanlage

Номер: DE102007048559A1

Die Erfindung betrifft eine Strahlbearbeitungsvorrichtung (2), insbesondere Ionenstrahlbearbeitungsvorrichtung, zur Bearbeitung von Oberflächen von Werkstücken (4), insbesondere Linsen (32). Die Werkstücke (4) werden in einer Werkstückhalterung (10) gehalten und mit einem Bearbeitungskopf (20), wobei im Bearbeitungszustand die Werkstückhalterung (10) entlang einer ersten Achse (Y) verfahrbar ist und der Bearbeitungskopf (20) entlang einer von der ersten Achse (Y) verschiedenen zweiten Achse (X) verfahrbar ist.

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06-02-2017 дата публикации

이온 조사에 의한 피복재의 탈막 방법 및 탈막 장치

Номер: KR1020170013308A
Принадлежит:

PCD(다결정 다이아몬드)와 같은 무기물로 피복된 공구나 기계 부품 등을 재생 사용이 가능해지도록 탈막하는 방법으로서, 이온 조사시에 피탈막 베이스재(피복재)에 사각을 발생시키기 어렵고, 온도적으로 베이스재(금속제 부재)에 취성 상을 발생시키기 어려우며 경제적인 속도로 탈막이 실행될 수 있는 탈막 방법을 제공하는 것을 과제로 한다. 금속제 부재의 표면에 무기물로 이루어지는 피막이 붙어 이루어지는 피복재(1)에 이온류(7)를 조사하여 상기 금속제 부재로부터 상기 피막을 박리하는 탈막 방법으로서, 피복재(1)를 2개 이상의 이온류(7)가 겹치는 이온류 집중부(7A)에 설치하고, 피복재(1)에 양음 바이어스를 부가하지 않고 피복재(1)에 이온류(7)를 조사하는 것을 특징으로 하는 탈막 방법에 따라 상기 과제를 해결할 수 있다.

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02-09-2009 дата публикации

METHOD AND APPARATUS FOR SAMPLE EXTRACTION AND HANDLING

Номер: EP2095134A2
Принадлежит:

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12-08-2004 дата публикации

OBJECT-MOVING METHOD, OBJECT-MOVING APPARATUS AND PRODUCTION PROCESS USING THE METHOD

Номер: WO2004068538A3
Автор: AIBA, Toshiaki
Принадлежит:

A method of moving an object (3) comprises a step of fixing the object to an object-moving means (7,8), a step of moving the object to a prescribed position by the object-moving means, and a step of releasing the object from the object-moving means; wherein the fixing step comprises forming a deposit (6), for fixation of the object (3) to the object-moving means (8) by applying a first corpuscular beam (1) in a first gas (9) to form a deposit; and the releasing step comprises etching the deposit (6) by applying a second corpuscular beam in contact with a second gas.

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31-01-2019 дата публикации

System and Method for Performing Nano Beam Diffraction Analysis

Номер: US20190035599A1
Принадлежит:

A system for performing diffraction analysis, includes a mill for removing a surface portion of a sample, and an analyzer for performing diffraction analysis on the milled sample. 1. A system for performing diffraction analysis , comprising:a mill for removing a surface portion of a sample; andan analyzer for performing diffraction analysis on the milled sample.2. The system of claim 1 , further comprising:a focused ion beam (FIB) device for preparing the sample, the mill removing a surface portion of the prepared sample.3. The system of claim 2 , wherein the diffraction analysis comprises nano beam diffraction (NBD) analysis claim 2 , the sample comprises a transmission electron microscopy (TEM) sample claim 2 , the mill comprises a broad beam ion mill for milling the prepared sample claim 2 , and the analyzer comprises a strain analyzer.4. The system of claim 3 , wherein the analyzer performs the NBD analysis on the milled sample to acquire diffraction data.5. The system of claim 4 , wherein the milling of the TEM sample exposes an underlying surface of the TEM sample claim 4 , and the strain analyzer uses a TEM camera image resolution of at least 4000×4000 pixels to acquire the diffraction data on the underlying surface.6. The system of claim 4 , wherein the surface portion removed by the broad beam ion mill comprises a portion of the surface of the TEM sample which has been damaged by the FIB device.7. The system of claim 4 , wherein the TEM sample comprises a parallel-sided sample claim 4 , and the broad beam ion mill removes a surface portion from two parallel sides of the parallel-sided sample.8. The system of claim 4 , wherein the surface portion comprises a thickness in a range from 1 nm to 45 nm.9. The system of claim 4 , wherein the surface portion comprises at least 10% of a thickness of the TEM sample claim 4 , andwherein the diffraction data comprises a sensitivity which is less than 0.1%.10. The system of claim 4 , wherein the structure comprises one ...

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23-05-2016 дата публикации

Vorrichtung zur Erzeugung eines Elektronenstrahls

Номер: DE202015101690U1
Автор:

Vorrichtung (2) zur Erzeugung eines Elektronenstrahls (4), mit einem Grundkörper (8) mit einer durch Wandungen begrenzte Kavität (12), in die über einen mit der Kavität (12) strömungsverbundenen Zugang (14) Gas (16) eintritt, welches Plasmaerzeugungsmittel (18) zur Bildung eines Plasmas (20) anregen, wobei freie Elektronen (22) des Plasmas (20) über einen Ausgang (24) die Kavität (12) in Richtung einer der Kavität (12) nachgeordneten Anode (46) verlassen, und Strahlformungsmittel (26) für die Formierung freier Elektronen (22) zu einem Elektronenstrahl (4), dadurch gekennzeichnet, dass die Strahlformungsmittel (26) wenigstens eine erste Blende (28) mit wenigstens einer Blendenöffnung (30) aufweisen, die derart eingerichtet und ausgebildet ist, dass das im Betriebszustand der Vorrichtung (2) in der Kavität (12) gebildete Plasma (20) einen sich in Strömungsrichtung (6) verjüngenden Plasmaabschnitt (32) ausbildet, über dessen der Blendenöffnung (30) zugewandten Stirnfläche (34) freie Elektronen ...

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02-05-2008 дата публикации

METHOD AND APPARATUS FOR SAMPLE EXTRACTION AND HANDLING

Номер: WO000002008051880A3
Принадлежит:

An improved method and apparatus for extracting and handling samples for S/TEM analysis. Preferred embodiments of the present invention make use of a micromanipulator and a hollow microprobe probe using vacuum pressure to adhere the microprobe tip to the sample. By applying a small vacuum pressure to the lamella through the microprobe tip, the lamella can be held more securely and its placement controlled more accurately than by using electrostatic force alone. By using a probe having a beveled tip and which can also be rotated around its long axis, the extracted sample can be placed down flat on a sample holder. This allows sample placement and orientation to be precisely controlled, thus greatly increasing predictability of analysis and throughput.

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10-11-2020 дата публикации

Method for removal of matter

Номер: US0010832918B2

A method of uniformly removing material from a sample surface includes the steps of sputtering by means of scanning the surface with a focused ion beam and a simultaneous observing of the sample during sputtering. Uniform sputtering of different materials is achieved by high-angle sputtering from multiple directions, wherein the directions are rotated relative to each other by a non-zero angle.

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19-05-2005 дата публикации

Method and apparatus for controlling topological variation on a milled cross-section of a structure

Номер: US2005103746A1
Принадлежит:

An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

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23-12-2009 дата публикации

Device for beam processing of workpieces, ion beam processing device

Номер: EP2048691A3
Автор: Ritter, Gerhard
Принадлежит:

Die Erfindung betrifft eine Strahlbearbeitungsvorrichtung (2), insbesondere lonenstrahlbearbeitungsvorrichtung, zur Bearbeitung von Oberflächen von Werkstücken (4), insbesondere Linsen, (32). Die Werkstücke (4) werden in einer Werkstückhalterung (10) gehalten und mit einem Bearbeitungskopf (20), wobei im Bearbeitungszustand die Werkstückhalterung (10) entlang einer ersten Achse (Y) verfahrbar ist und der Bearbeitungskopf (20) entlang einer von der ersten Achse (Y) verschiedenen zweiten Achse (X) verfahrbar ist.

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06-09-2007 дата публикации

Atomically sharp edged cutting blades and methods for making the same

Номер: KR0100755961B1
Принадлежит: 마틴 에이취. 뉴만

컷팅 기구를 위한 극히 미세하게 예리해진 컷팅 엣지가 설명된다. 집속 이온 빔(focused ion beam; FIB) 밀링 공정은 극히 미세하게 예리한 컷팅 엣지를 제공한다. 한 실시예에서, 컷팅 엣지 블랭크(cutting edge blank)가 제공되고 FIB에 의하여 밀링되어 극히 미세하게 예리한 엣지가 형성된다. 다른 실시예에서, 금속 컷팅 엣지 블랭크가 제공되고, 보다 경질의 재료 층이 블랭크의 적어도 일측상에 제공되며, FIB로 밀링되어 극히 미세하게 예리한 엣지를 형성한다. An extremely finely sharpened cutting edge for a cutting mechanism is described. Focused ion beam (FIB) milling processes provide extremely finely sharp cutting edges. In one embodiment, a cutting edge blank is provided and milled by FIB to form an extremely fine edge. In another embodiment, a metal cutting edge blank is provided, a harder layer of material is provided on at least one side of the blank, and milled with FIB to form an extremely fine edge. 컷팅 블레이드 Cutting blade

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27-01-2014 дата публикации

DIRECTED MULTI-DEFLECTED ION BEAM MILLING OF A WORK PIECE AND DETERMINING AND CONTROLLING EXTENT THEREOF

Номер: KR0101355280B1
Автор:
Принадлежит:

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07-01-1999 дата публикации

Method and apparatus for energy beam machining

Номер: EP0000703596A3
Принадлежит: Ebara Corp

An energy beam is irradiated to a workpiece (12) through a beam transmission hole (14a) defined in a mask (14). At that time, a relative position between an energy beam source (13) and the mask or the mask and the workpiece is changed, so that machining depth of the workpiece is varied depending on machining portions of the workpiece, which corresponds to amounts of irradiation of the energy beam. With this method, a machined product having locally different depths can be very easily made and further the product can be machined to desired depths with a high accuracy by a single machining operation in a short time.

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07-08-2013 дата публикации

Номер: JP0005254613B2
Автор:
Принадлежит:

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07-04-2016 дата публикации

Ionenstrahlbearbeitung von optischen Bauteilen

Номер: DE102016201874A1
Принадлежит:

Die vorliegende Erfindung betrifft ein Verfahren zur Bearbeitung von Werkstücken, insbesondere von optischen Bauteilen vorzugsweise für Projektionsbelichtungsanlagen für die Mikrolithographie, bei welchem ein Werkzeug über das zu bearbeitende Werkstück bewegt wird und das Werkzeug während der Bewegung über das Werkstück einen Materialabtrag von dem Werkstück gemäß einer Abtragsfunktion bewirkt, wobei die Verweildauer des Werkzeugs an einem Ort des Werkstücks mit Hilfe eines mathematischen Optimierungsverfahrens bestimmt wird.

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13-06-2013 дата публикации

Method for production of micro-or nano-structured components such as optical element, involves irradiating photons and/or electrons according to the structure to be produced, so that full surface material compaction takes place

Номер: DE102012212199A1
Принадлежит:

The method involves providing the blank, and irradiating the photons and/or electrons (5) according to the structure to be produced, so that full surface material compaction takes place. The components of predetermined shape are made of glasses, ceramic or glass ceramic. The photon or electron beam is collimated and is guided relative to the surface to be machined. The photon or electron beam has a diameter in the region of the smallest feature size, having less than or equal 10 nm.

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31-08-2004 дата публикации

Samples for transmission electron microscopy

Номер: US0006784427B1
Принадлежит: Bal-Tec AG, BAL TEC AG, BAL-TEC AG

TEM samples are cut from a solid state material with length (l) and width (b) and with a front-side sample surface ( 7 ) onto which a curable adhesive of the flowable type is applied for fixing a fiber ( 2 ) with a diameter (d) aligned on the sample surface ( 7 ) in the longitudinal direction of the sample substantially centrally with respect to the width (b), with the adhesive ( 3 ) applied substantially over the entire area on the sample surface ( 7 ) and the fiber ( 2 ) aligning itself upon being placed onto the adhesive ( 3 ) and being wetted essentially along its entire length with the adhesive and the latter subsequently being cured. A simple and economical preparation of TEM samples with high quality is thereby made possible.

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29-01-2008 дата публикации

Method of fabricating electronic component using resist structure with no undercut

Номер: US0007323112B2

A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.

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18-05-2006 дата публикации

Apparatus and method for polishing gemstones and the like

Номер: US20060102854A1
Принадлежит:

The invention comprises a two-step process for achieving an ultra-polish finish on materials such as gemstones and the like by first performing a chemical-mechanical polishing of the material using an intermetallic material as the grinding medium followed by a gas cluster ion beam (GCIB) treatment. The intermetallic grinding wheel is formed of carbide-forming metals in the form of intermetallics consisting of one kind or more of elements selected from the group of Al, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Os, Ir and Pt, and one kind or more of elements selected from the group of Ti, V, Zr, Nb, Mo, Hf, Ta and W. The gas cluster ion beams are comprised of gas clusters having nano-sized aggregates of materials that are gaseous under conditions of standard temperature and pressure. Such clusters can be ionized by electron bombardment or other means, permitting the gas clusters to be formed into directed beams of known and controllable energy. The larger sized gas clusters are the most useful ...

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10-12-2020 дата публикации

MILLING A MULTI-LAYERED OBJECT

Номер: US20200384592A1
Принадлежит: APPLIED MATERIALS ISRAEL LTD.

A miller, a non-transitory computer readable medium, and a method for milling a multi-layered object. The method may include (i) receiving or determining milling parameters related to a milling process, the milling parameters may include at least two out of (a) a defocus strength, (b) a duration of the milling process, (c) a bias voltage supplied to an objective lens during the milling process, (d) an ion beam energy, and (e) an ion beam current density, and (ii) forming a crater by applying the milling process while maintaining the milling parameters, wherein the applying of the milling process includes directing a defocused ion beam on the multi-layered object. 1. A method for milling a multi-layered object , the method comprises:receiving or determining milling parameters related to a milling process; wherein the milling parameters comprise at least two out of (a) a defocus strength, (b) a duration of the milling process, (c) a bias voltage supplied to an objective lens during the milling process, (d) an ion beam energy, and (e) an ion beam current density; andforming a crater in the multi-layered object by applying the milling process while maintaining the milling parameters, wherein the applying of the milling process comprises directing a defocused ion beam onto the multi-layered object.2. The method according to comprising receiving crater parameters and determining the milling parameters based on the crater parameters.3. The method according to wherein the crater parameters comprise one or more materials of the multi-layered object that are milled by the milling process claim 2 , and spatial parameters that define at least two out of shape and size of the crater.4. The method according to wherein the determining is based on a mapping between the milling parameters and the crater parameters.5. The method according to comprising determining the mapping based on test milling processes applied using different milling parameters.6. The method according to wherein ...

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29-09-2005 дата публикации

Atomically sharp edged cutting blades and methods for making same

Номер: US2005210684A1
Принадлежит:

An atomically sharpened cutting edge for a cutting instrument is described. Focused ion beam (FIB) milling provides the atomically sharp cutting edge. In one embodiment, a cutting edge blank is provided and milled by FIB to form an atomically sharp edge. In another embodiment, a metal cutting edge blank is provided, a layer of a harder material is provided on at least one side of the blank and it is milled by FIB to form an atomically sharp edge.

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28-08-2008 дата публикации

Work-piece e.g. optical lens surface, holding device for e.g. ion radiating processing device, has support carrier for holding work-piece carrier in position at stop unit using elastic unit

Номер: DE102007057950A1
Принадлежит:

The device has a support carrier (3) for holding a work-piece carrier (4), where the support carrier is movably arranged at a supporting device (5). The support carrier is movable in a lower end position against the force of a spring elastic unit (6) for accommodating and removing the work-piece carrier using a drive device (2). The support carrier holds the work-piece carrier in a supporting position at a stop unit (8) using the spring elastic unit, when the drive device is in an inactive condition, where the stop unit is arranged at the supporting device.

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08-10-2012 дата публикации

DIRECTED MULTI-DEFLECTED ION BEAM MILLING OF A WORK PIECE AND DETERMINING AND CONTROLLING EXTENT THEREOF

Номер: KR1020120109641A
Автор:
Принадлежит:

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07-10-2010 дата публикации

METHOD AND APPARATUS FOR PRODUCING THREE DIMENSIONAL NANO AND MICRO SCALE STRUCTURES

Номер: WO2010112827A3
Автор: COX, David
Принадлежит:

A three-dimensional milling method and apparatus is disclosed for milling micrometre and a nanometre scale three-dimensional structures. The apparatus includes an ion column (12) operable to generate a milling beam onto a substrate (20) held on an instrument stage (18). A patterning computer (22) is operable to control the ion column (12) to generate varying ion beam and/or dwell times or to produce a plurality of milling passes, in which subsequent passes overlap previous passes at least partially to create three-dimensional structures. Optionally, an SEM column (14) may be provided.

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19-08-2010 дата публикации

Oberflächenbearbeitungsvorrichtung

Номер: DE102006032303B4
Принадлежит: ELLCIE MAINTENANCE GMBH

Oberflächenbearbeitungsvorrichtung zum Elektronenstrahlpolieren mit einer evakuierbaren Bearbeitungskammer (2), in deren Inneren eine Werkstückaufnahme (6), eine Elektronenstrahlquelle (8), welche einen Elektronenstrahl zur Bearbeitung der Oberfläche des Werkstückes (14) erzeugt, sowie Detektoren und Elektronenoptik eines Elektronenmikroskops angeordnet sind, wobei die Elektronenstrahlquelle (8) an einer Positioniereinrichtung (10) angebracht ist, mittels welcher die Elektronenstrahlquelle (8) im Inneren der Bearbeitungskammer (2) beweg- und positionierbar ist.

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27-06-2002 дата публикации

Method and apparatus for specimen fabrication

Номер: US2002079463A1
Автор:
Принадлежит:

The invention provides a sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. The invention also provides a sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by ion beam processing by using an ion beam optical system for condensing an ion beam emitted from an ion source and scanning and deflecting an ion beam, wherein an angle formed between an ion beam optical axis of the ion beam optical system and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning ...

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02-05-2008 дата публикации

METHOD AND APPARATUS FOR SAMPLE EXTRACTION AND HANDLING

Номер: WO2008051880A2
Принадлежит:

An improved method and apparatus for extracting and handling samples for S/TEM analysis. Preferred embodiments of the present invention make use of a micromanipulator and a hollow microprobe probe using vacuum pressure to adhere the microprobe tip to the sample. By applying a small vacuum pressure to the lamella through the microprobe tip, the lamella can be held more securely and its placement controlled more accurately than by using electrostatic force alone. By using a probe having a beveled tip and which can also be rotated around its long axis, the extracted sample can be placed down flat on a sample holder. This allows sample placement and orientation to be precisely controlled, thus greatly increasing predictability of analysis and throughput.

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12-07-2000 дата публикации

ION SOURCE FOR GENERATING IONS OF A GAS OR VAPOUR

Номер: EP0000928495B1
Принадлежит: Barna, Arpad, Szigethy, Dezso

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28-11-2012 дата публикации

Method of manufacturing workpiece

Номер: CN102794697A
Автор: Uehara Yoshihiro
Принадлежит:

Provided is a method of manufacturing a workpiece, which is capable of processing a workpiece in one processing with high precision. The method of manufacturing includes: changing a relative orientation of a unit removal shape and the workpiece; setting relative positions of a rotation shaft of a rotating polishing tool and the workpiece so as to have a relative orientation having a smallest difference among differences between a calculated removal shape and a target removal shape determined for each of the relative orientations; and processing the workpiece at a relative speed in accordance with a dwell-time distribution. The method of manufacturing is capable of processing the workpiece with little error in one scanning for processing, and hence it is possible to increase precision of a workpiece surface and improve processing efficiency by reducing the number of repetition of the processing.

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04-05-2006 дата публикации

APPARATUS AND METHOD FOR POLISHING GEMSTONES AND THE LIKE

Номер: WO2006047611A2
Принадлежит:

The invention comprises a two-step process for achieving an ultra-polish finish on materials such as gemstones and the like by first performing a chemical-mechanical polishing of the material using an intermetallic material as the grinding medium followed by a gas cluster ion beam (GCIB) treatment. The intermetallic grinding wheel is formed of carbide-forming metals in the form of intermetallics consisting of one kind or more of elements selected from the group of Al, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Os, Ir and Pt, and one kind or more of elements selected from the group of Ti, V, Zr, Nb, Mo, Hf, Ta and W. The gas cluster ion beams are comprised of gas clusters having nano-sized aggregates of materials that are gaseous under conditions of standard temperature and pressure. Such clusters can be ionized by electron bombardment or other means, permitting the gas clusters to be formed into directed beams of known and controllable energy. The larger sized gas clusters are the most useful ...

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14-12-2000 дата публикации

IONENQUELLE ZUR ERZEUGUNG VON IONEN AUS GAS ODER DAMPF

Номер: DE0069609358T2
Принадлежит: BARNA ARPAD, BARNA, ARPAD

An ion source for generating ions of a gas or vapor, especially for thinning solid state samples, includes a housing, an arrangement for introducing the gas or vapor into the housing and an anode positioned within the housing. The anode has a rotationally symmetrical cavity which is open at both sides along the axis of the source. First and second electrooptical mirrors are disposed along the source axis and define therebetween a space in which the anode is positioned The mirrors produce an electrostatic field to cause electrons to oscillate between them. At least one of the mirrors is apertured for exit therethrough of a fraction of ions generated in the space. An electron generating arrangement is disposed at one side of the cavity externally of the space between the mirrors and further, an arrangement causes the electrons to move into the cavity.

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05-06-2008 дата публикации

High energy ion beam precision modifies the profile or surface micro-roughness of an optical lens or mirror used in micro-lithography

Номер: DE102007058103A1
Принадлежит: CARL ZEISS SMT GMBH

In a precision process to modify the surface of an optical lens, the lens is exposed to an ion beam in which the ions have a kinetic energy of 100 ke V or more. Further claimed are commensurate lenses with a modified profile or surface micro-roughness.

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15-06-2005 дата публикации

SHARP LEAVES WITH SHARPENED EDGE ATOMIC AND METHODS FOR ITS MANUFACTURE

Номер: AR0000042165A1
Автор:
Принадлежит:

Se procura una hoja que posee un borde cortante afilado atómicamente, fabricada con un material duro y duradero. Esta invención emplea teecnología de fresado de haz iónico concentrado (HIC) para fresar atómicamente un borde afilado atómicamente en la hoja de un instrumento cortante es decir, el borde es filoso en una escala de sub-micrones y puede tener un radio de curvatura de, aproximadamente 1 A a 300 A.

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22-03-2012 дата публикации

METHOD AND APPARATUS FOR PRODUCING THREE DIMENSIONAL NANO AND MICRO SCALE STRUCTURES

Номер: US20120067718A1
Автор: David Cox, COX DAVID

A three-dimensional milling method and apparatus is disclosed for milling micrometre and a nanometre scale three-dimensional structures. The apparatus includes an ion column operable to generate a milling beam onto a substrate held on an instrument stage. A patterning computer is operable to control the ion column to generate varying ion beam and/or dwell times or to produce a plurality of milling passes, in which subsequent passes overlap previous passes at least partially to create three-dimensional structures. Optionally, an SEM column may be provided.

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02-06-2005 дата публикации

METHOD AND APPARATUS FOR CONTROLLING TOPOGRAPHICAL VARIATION ON A MILLED CROSS-SECTION OF A STRUCTURE

Номер: WO2005050691A2
Принадлежит:

An improved method of controlling topographical variations when milling a cross-–section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

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13-06-2006 дата публикации

FIB milling of copper over organic dielectrics

Номер: US0007060196B2

Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.

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24-05-2016 дата публикации

Method and apparatus for sample extraction and handling

Номер: US0009349570B2
Принадлежит: FEI Company, FEI CO, FEI COMPANY

An improved method and apparatus for extracting and handling samples for S/TEM analysis. Preferred embodiments of the present invention make use of a micromanipulator and a hollow microprobe probe using vacuum pressure to adhere the microprobe tip to the sample. By applying a small vacuum pressure to the lamella through the microprobe tip, the lamella can be held more securely and its placement controlled more accurately than by using electrostatic force alone. By using a probe having a beveled tip and which can also be rotated around its long axis, the extracted sample can be placed down flat on a sample holder. This allows sample placement and orientation to be precisely controlled, thus greatly increasing predictability of analysis and throughput.

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26-02-2004 дата публикации

Verfahren zur Herstellung atomar scharfer Schneidklingen.

Номер: DE0060002812T2
Принадлежит: NEWMAN MARTIN H, NEWMAN, MARTIN H.

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02-03-2006 дата публикации

DIRECTED MULTI-DEFLECTED ION BEAM MILLING OF A WORK PIECE AND DETERMINING AND CONTROLLING EXTENT THEREOF

Номер: WO2006021958A3
Принадлежит:

Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam (10); and directing and at least twice deflecting the provided ion beam, for forming a directed multi deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly (110); and an ion beam directing and multi-deflecting assembly (120), for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.

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04-06-2015 дата публикации

Method of producing a freestanding thin film of nano-crystalline graphite

Номер: US20150151972A1
Принадлежит: FEI Co

A freestanding thin film of nano-crystalline graphite is described, as well as a method of producing a freestanding thin film of nano-crystalline graphite including: providing a freestanding thin film of amorphous carbon, heating the freestanding thin film to a high temperature in an inert atmosphere or in a vacuum; and allowing the freestanding thin film to cool down, as a result of which a freestanding thin film of nano-crystalline graphite is formed. The films can be used, for example, as phase plates in a Transmission Electron Microscope.

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24-05-2018 дата публикации

TOMOGRAPHY SAMPLE PREPARATION SYSTEMS AND METHODS WITH IMPROVED SPEED, AUTOMATION, AND RELIABILITY

Номер: US20180143110A1
Принадлежит: FEI COMPANY

Sample pillars for x-ray tomography or other tomography scanning are created using an innovative milling strategy on a Plasma-FIB. The strategies are provided in methods, systems, and program products executable to perform the strategies herein. The milling strategy creates an asymmetrical crater around a sample pillar, and provides a single cut cut-free process. Various embodiments may include tuning the ion dose as a function of pixel coordinates along with optimization of the beam scan and crater geometries, drastically reducing the preparation time and significantly improving the overall workflow efficiency. A novel cut-free milling pattern is provided with a crescent shape and optimized dwell-time values. 1. A method for creating a tomography sample from a sample substrate , comprising:(a) identifying a target area and underlying target volume of a substrate containing a region of interest;(b) creating a mill pattern based on the target area and a desired sample pillar height and width;(c) milling a crater asymmetrically positioned around the identified target area to form a sample pillar containing a target volume using a focused ion beam (FIB), (i) the crater large enough to allow a single FIB cut at a desired angle from vertical with respect to the sample pillar orientation to pass within the crater and cut the sample pillar free from the substrate, (ii) the crater having a first depth on a cutting side of the sample pillar of at least the desired sample pillar height and a second, larger, depth opposite the cutting side, the second depth large enough to accommodate the opposite end of the single FIB cut to leave the sample pillar detached after the single FIB cut, (iii) the crater having a first gap between the sample pillar and a crater edge on the cutting side and a second gap, substantially smaller than the first gap, opposite the cutting side;(d) attaching a probe tip of a probe to the sample pillar;(e) cutting the sample pillar free with the single FIB ...

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21-06-2018 дата публикации

Methods, Apparatuses, Systems and Software for Treatment of a Specimen By Ion-Milling

Номер: US20180174798A1
Принадлежит: IB LABS Inc

Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

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05-07-2018 дата публикации

System and Method for Performing Nano Beam Diffraction Analysis

Номер: US20180190470A1
Принадлежит:

A system for performing diffraction analysis, includes a focused ion beam (FIB) device for preparing a sample, a mill for removing a surface portion of the prepared sample, and an analyzer for performing diffraction analysis on the milled sample. 1. A system for performing diffraction analysis , comprising:a focused ion beam (FIB) device for removing a sample from a structure;a mill for milling the sample to remove a surface portion of the sample; andan analyzer for performing diffraction analysis on the milled sample.2. The system of claim 1 , wherein the diffraction analysis comprises nano beam diffraction (NBD) analysis claim 1 , the sample comprises a transmission electron microscopy (TEM) sample claim 1 , the mill comprises a broad beam ion mill for milling the sample claim 1 , and the analyzer comprises a strain analyzer.3. The system of claim 2 , wherein the analyzer performs the NBD analysis on the milled sample to acquire diffraction data.4. The system of claim 3 , wherein the milling of the TEM sample exposes an underlying surface of the TEM sample claim 3 , and the strain analyzer uses a TEM camera image resolution of at least 4000×4000 pixels to acquire the diffraction data on the underlying surface.5. The system of claim 3 , wherein the surface portion removed by the broad beam ion mill comprises a portion of the surface of the TEM sample which has been damaged by the FIB device.6. The system of claim 3 , wherein the TEM sample comprises a parallel-sided sample claim 3 , and the broad beam ion mill removes a surface portion from two parallel sides of the parallel-sided sample.7. The system of claim 3 , wherein the surface portion comprises a thickness in a range from 1 nm to 45 nm.8. The system of claim 3 , wherein the surface portion comprises at least 10% of a thickness of the TEM sample.9. The system of claim 3 , wherein the diffraction data comprises a sensitivity which is less than 0.1%.10. The system of claim 3 , wherein the broad beam ion mill is ...

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25-10-2018 дата публикации

ASSESSMENT AND CALIBRATION OF A HIGH ENERGY BEAM

Номер: US20180308657A1
Принадлежит:

A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area. 1. A high energy beam verification , calibration , and profiling system comprising:a conductive base plate;at least one support extending from the base plate;a plurality of conductors, each conductor supported by the at least one support such that each conductor is insulated from the conductive base plate and having a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors;a data logger electrically connected to at least one conductor to receive and record data associated with electrical charges flowing through the at least one conductor; anda computer electrically connected to the data logger, the computer being adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.2. The system of claim 1 , wherein each of the conductors is selected from the group consisting of a wire and a thin plate.3. The system of claim 1 , wherein the at least one support is a thin plate having at least one aperture ...

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01-08-2006 дата публикации

Ion beam apparatus and sample processing method

Номер: US7084399B2
Принадлежит: HITACHI LTD

For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.

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12-08-2004 дата публикации

Object-moving method, object-moving apparatus and production process using the method

Номер: WO2004068538A2
Автор: Toshiaki Aiba
Принадлежит: CANON KABUSHIKI KAISHA

A method of moving an object (3) comprises a step of fixing the object to an object-moving means (7,8), a step of moving the object to a prescribed position by the object-moving means, and a step of releasing the object from the object-moving means; wherein the fixing step comprises forming a deposit (6), for fixation of the object (3) to the object-moving means (8) by applying a first corpuscular beam (1) in a first gas (9) to form a deposit; and the releasing step comprises etching the deposit (6) by applying a second corpuscular beam in contact with a second gas.

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16-07-2019 дата публикации

Methods, apparatuses, systems and software for treatment of a specimen by ion-milling

Номер: US10354836B2
Принадлежит: IB LABS Inc

Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

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01-06-2011 дата публикации

TEM Probe

Номер: EP1505383B1
Принадлежит: LEICA MIKROSYSTEME GMBH

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14-07-2022 дата публикации

ion milling device

Номер: KR20220100026A
Принадлежит: 주식회사 히타치하이테크

이온 분포의 재현성을 높일 수 있는 이온 밀링 장치를 제공한다. 이온 밀링 장치는, 이온원(101)과, 이온원(101)으로부터 비집속의 이온 빔을 조사함으로써 가공되는 시료가 적재되는 시료 스테이지(102)와, 이온원(101)과 시료 스테이지(102) 사이에 위치하는 궤도를 따라서, 이온 빔 전류 측정 부재(105)를 보유 지지한 측정 부재 보유 지지부(106)를 이동시키는 구동 유닛(107)과, 궤도의 근방에 배치되는 전극(112)을 갖고, 전극(112)에 소정의 정전압을 인가하고, 이온원(101)으로부터 제1 조사 조건에서 이온 빔이 출력된 상태로, 구동 유닛(107)에 의해 이온 빔 전류 측정 부재(105)를 이온 빔의 조사 범위에 있어서 이동시키고, 이온 빔이 이온 빔 전류 측정 부재(105)에 조사됨으로써 흐르는 이온 빔 전류를 측정한다.

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18-09-2013 дата публикации

Workpiece manufacturing method

Номер: JP5294919B2
Автор: 克紘 舟橋
Принадлежит: Canon Inc

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22-10-2001 дата публикации

Sample preparation method and apparatus

Номер: JP3221797B2
Принадлежит: HITACHI LTD

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03-07-2018 дата публикации

Electron beam emission device

Номер: US10014146B2

Disclosed is an electron beam emission device comprising a housing which defines a space in which electron beams are accelerated, and has an opening at the other side thereof through which the electron beams are emitted; a cathode which is disposed at one side in the housing, and emits the electrons; an anode which is positioned in the housing so as to be spaced apart from the cathode toward the other side, and accelerates the electrons emitted from the cathode; and an insulation holder which insulates a portion between the cathode and the housing, and fixes the cathode, wherein the cathode has a surface which faces the anode and is formed concavely to have a gradient, and a rim of the surface of the cathode, which has the gradient, is formed to be rounded.

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14-09-2011 дата публикации

Method and apparatus for sample extraction and handling

Номер: EP2095134A4
Принадлежит: FEI Co

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01-12-2022 дата публикации

Method for controlling dynamically controllable ultrawide-amplitude and high-response ion source

Номер: US20220384141A1

The present disclosure provides a system and method for controlling a dynamically controllable ultrawide-amplitude and high-response ion source, including: resolving dwell time of ion beam machining during iterative machining; selecting an appropriate velocity V of a movable shaft of a machine tool according to a calculation result of the dwell time; and dynamically calculating process parameters of an ion source according to an initial surface error of an optical component and the velocity V of the movable shaft, and generating a corresponding numerical control (NC) program to machine the optical component. The present disclosure can control the removal function of the ion beam polishing in real time, improve the precision and efficiency of the ion beam polishing, and further reduce the requirement on a movement system of the machine tool and the depth of a damaged layer.

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12-08-1997 дата публикации

Method for making specimen and apparatus thereof

Номер: US5656811A
Принадлежит: HITACHI LTD

A method for making a specimen for use in observation through a transparent electron microscope, includes a step of milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step of observing a mark for detection of a position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the milling, and a step of compensating for positional drift of the focused ion beam during milling in accordance with a result of the observation. The method is carried out by an apparatus which includes irradiation area control means for controlling an irradiation area of the focused ion beam onto the specimen so that a surface of the specimen to be milled into the thin film part is not included in the secondary charged particle image when the secondary charged particle image of the surface, on which the mark for detecting the milling position of the specimen is formed, is displayed by the secondary charged particle image during milling part of the specimen, and compensation means for compensating the positional drift of the focused ion beam during milling in accordance with the mark for detecting the milling position.

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11-10-2020 дата публикации

Ion grinding device

Номер: TWI707375B
Автор: 金子朝子, 高須久幸

實現一種對於包含具有醯亞胺鍵結的材料之試料,亦可高速地磨削加工之離子磨削裝置。為此,離子磨削裝置,具有:真空腔室(6),將試料(3)保持於真空環境;及離子槍(1),對試料照射非聚焦的離子束(2);及氣化容器(17),蓄積水溶性的離子液體與水之混合溶液(13);及噴嘴(11、12),將使混合溶液氣化而成的水蒸氣,供給至離子束所致之試料的加工面的鄰近。

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23-11-2022 дата публикации

Tomography sample preparation systems and methods with improved speed, automation, and reliability

Номер: KR102470232B1
Принадлежит: 에프이아이 컴파니

X-선 단층 촬영 또는 기타 단층 촬영 스캔을 위한 샘플 필러는 플라즈마-FIB의 혁신적인 밀링 방법을 사용하여 생성된다. 상기 방법은 본 명세서에서 방법을 수행하기 위해 실행 가능한 방법, 시스템 및 프로그램 제품에 제공된다. 밀링 방법은 샘플 필러 주위에 비대칭 크레이터를 생성하며, 단일 절단 컷-프리 공정을 제공한다. 다양한 실시예는 빔 스캔 및 크레이터의 기하학적 구조의 최적화와 함께 픽셀 좌표의 함수로서 이온 도즈를 조율하고 준비 시간을 대폭 단축하며 전체 작업 흐름(workflow)을 현저하게 향상시키고 준비 시간을 크게 감소시키는 것을 포함할 수 있다. 새로운 컷-프리 밀링 패턴은 초승달 형상 및 최적화된 체류-시간 값을 제공한다. Sample pillars for X-ray tomography or other tomographic scans are created using Plasma-FIB's innovative milling method. The method is provided herein as a method, system, and program product executable for performing the method. The milling method creates an asymmetric crater around the sample pillar and provides a single cut cut-free process. Various embodiments include tuning the ion dose as a function of pixel coordinates along with optimizing the beam scan and crater geometry, significantly reducing preparation time, significantly improving overall workflow and greatly reducing preparation time. can do. The new cut-free milling pattern provides a crescent shape and optimized dwell-time values.

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11-12-2007 дата публикации

Slotted antenna waveguide plasma source

Номер: US7305935B1
Автор: John Foster

A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

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23-06-1998 дата публикации

Method and apparatus for energy beam machining

Номер: US5770123A
Принадлежит: Ebara Corp

An energy beam is irradiated to a workpiece through a beam transmission hole defined in a mask. At that time, a relative position between an energy beam source and the mask or the mask and the workpiece is changed, so that machining depth of the workpiece is varied depending on machining portions of the workpiece, which correspond to amounts of irradiation of the energy beam. With this method, a machined product having locally different depths very easily can be made and further the product can be machined to desired depths with high accuracy by a single machining operation in a short time.

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26-01-1996 дата публикации

Sample preparation method and device

Номер: KR960002723A

반도체소자 등의 특정장소를 투과전자 현미경으로 관찰하기 위한 시료작성방법에 관한 것으로, 특히 접속이온빔가공에 의한 시료작성방법 및 그 장치에 관한 것으로서, 접속이온빔의 가공에 의해 TEM시료를 실패하는 일없이 적절한 두께로 확실하게 마무리할 수 있는 방법과 실용성이 있는 경제적인 장치를 제공하기 위해, 고휘도 이온빔을 발생시키는 고휘도이온원, 발생시킨 고휘도 이온빔을 미세한 스폿형상으로 집속시켜서 시료상에 주사해서 조사하는 이온빔 조사수단, 집속한 이온빔의 조사에 의해 시료에서 발생하는 2차하전입자를 검출하는 2차하전입자 검출수단, 검출한 2차하전입자의 검출신호에 따라서 2차하전입자상을 표시하는 2차하전입자상 표시수단, 집속한 이온빔을 조사해서 시료의 일부를 박막형상으로 가공하는 도중에 시료의 가공의 위치검출용 마크가 형성된 표면의 2차하전입자상을 표시할 때 이 2차하전입자상에 박막형상으로 가공하는 가공면이 포함되지 않도록 집속한 이온빔의 시료상으로의 조사영역을 제어하는 조사영역 제어수단 및 2차하전입자상 표시수단에 의해 표시된 시료표면의 가공의 위치검출용 마크에 따라서 가공의 도중에 집속이온빔의 위치드리프트를 보정하는 수단을 구비한 시료작성장치를 사용해서, 시료에 집속이온빔을 주사해서 조사하는 것에 의해 시료의 일부를 투과전자 현미경으로 관찰할 수 있는 박막형상으로 가공하는 스텝, 가공하는 스텝의 도중에 하전입자빔을 박막형상으로 가공하는 부분에 조사하는 일없이 시료상에 주사해서 조사하고, 시료에 마련한 위치검출용 마크를 2차하전입자상으로써 관찰하는 스텝 및 관찰한 결과에 따라서 가공하는 스텝의 도중에 집속이온빔의 위치드리프트를 보정하는 스텝을 포함한다. 이와 같은 장치와 방법을 이용하는 것에 의해, 집속이온빔의 위치드리프트가 있어도 정밀도 좋게 박막부를 가공해서 TEM시료를 작성할 수 있으므로, TEM관찰의 능률을 비약적으로 향상시킬 수 있다.

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04-09-2008 дата публикации

Method and apparatus for sample extraction and handling

Номер: WO2008051880B1

An improved method and apparatus for extracting and handling samples for S/TEM analysis. Preferred embodiments of the present invention make use of a micromanipulator and a hollow microprobe probe using vacuum pressure to adhere the microprobe tip to the sample. By applying a small vacuum pressure to the lamella through the microprobe tip, the lamella can be held more securely and its placement controlled more accurately than by using electrostatic force alone. By using a probe having a beveled tip and which can also be rotated around its long axis, the extracted sample can be placed down flat on a sample holder. This allows sample placement and orientation to be precisely controlled, thus greatly increasing predictability of analysis and throughput.

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02-02-2021 дата публикации

Ion milling device

Номер: CN112313770A
Автор: 金子朝子, 高须久幸
Принадлежит: Hitachi High Technologies Corp

本发明提供一种对含有具有酰亚胺键的材料的试样也能够进行高速铣削加工的离子铣削装置。因此,离子铣削装置具有:将试样(3)保持在真空气氛中的真空腔室(6);向试样照射非聚焦离子束(2)的离子枪(1);储存水溶性离子液体与水的混合溶液(13)的气化容器(17);以及将使混合溶液气化而得到的水蒸气供给至利用离子束加工的试样加工面附近的喷嘴(11、12)。

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31-12-2013 дата публикации

Apparatus and method for forming a solid immersion lens using a binary bitmap milling pattern

Номер: US8618518B2

A method for forming a solid immersion lens (SIL) includes generating a focused ion beam, and projecting the focused ion beam onto an optical medium at locations defined by a binary bitmap milling pattern, wherein the locations at which the focused ion beam impact a surface of the optical medium are randomized over successive raster scans of the surface of the optical medium to form at least a portion of a hemispherical structure in the optical medium.

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13-06-2012 дата публикации

Charged particle beam processing method

Номер: EP2221849A3
Автор: Katsuhiro Funabashi
Принадлежит: Canon Inc

Plural charged particle beams (101,102) are simultaneously radiated to a surface (100) of an object for processing it while the beams (101,102) are moved relative to the surface (100) of the object by the same movement. Among the plurality of charged particle beams, a first charged particle beam (101) is an ion beam for a shape correcting process that is used to variable control a scanning speed along a raster scan trajectory (103). A second charged particle beam (102) is an ion beam for a smoothing process that is used to variable control a pulse width or the amount of current according to a variation in the scanning speed. Plural processing operations with different distributions of the number of particles that reach a unit area on surface of the object are performed at the same time. Therefore, the processing time is reduced.

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13-12-2007 дата публикации

Atomically sharp edged cutting blades and methods for making same

Номер: US20070283578A1
Автор: Martin Newman
Принадлежит: Becton Dickinson and Co

An atomically sharpened cutting edge for a cutting instrument is described. Focused ion beam (FIB) milling provides the atomically sharp cutting edge. In one embodiment, a cutting edge blank is provided and milled by FIB to form an atomically sharp edge. In another embodiment, a metal cutting edge blank is provided, a layer of a harder material is provided on at least one side of the blank and it is milled by FIB to form an atomically sharp edge.

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13-05-2015 дата публикации

Method of manufacturing workpiece

Номер: CN102794697B
Автор: 上原良浩
Принадлежит: Canon Inc

提供了一种制造工件的方法,其能够在一次加工中高精度地加工工件。该制造方法包括:改变单位去除形状和工件的相对方位;设定旋转研磨工具的旋转轴和工件的相对位置,以便具有在对于各个相对方位确定的计算去除形状和目标去除形状之间差值中差值为最小的相对方位;并且,根据驻留时间分布以相对速度加工工件。该制造方法能够在一次加工扫描中小误差地加工工件,因此可以增加工件表面的精度和通过减少加工重复次数而改善加工效率。

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26-01-2023 дата публикации

Sample processing apparatus and method of processing sample

Номер: JP2023013518A
Принадлежит: Jeol Ltd

【課題】ユーザーが加工状況を正確に把握できる試料加工装置を提供する。【解決手段】試料を互いに異なる方向から照明する第1照明装置および第2照明装置を含む照明系と、試料を撮影するカメラと、照明系およびカメラを制御して、イオン源の制御に用いられる加工制御用画像、および表示部に表示される表示用画像を取得する処理部と、を含み、処理部は、試料が加工制御用の照明条件で照明されるように照明系を制御する処理と、加工制御用の照明条件で照明された試料をカメラで撮影して加工制御用画像を取得する処理と、加工制御用画像に基づいて、イオン源を制御する処理と、試料が加工制御用の照明条件とは異なる表示用の照明条件で照明されるように照明系を制御する処理と、表示用の照明条件で照明された試料をカメラで撮影して表示用画像を取得する処理と、表示用画像を表示部に表示させる処理と、を行う、試料加工装置。【選択図】図12

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12-03-2024 дата публикации

铣削多层式物体的方法、铣削机和计算机可读介质

Номер: CN113924634B
Автор: Y·扎尔
Принадлежит: Applied Materials Israel Ltd

一种铣削机、非瞬态计算机可读介质、以及用于铣削多层式对象的方法。所述方法可以包括:(i)接收或确定与铣削工艺有关的铣削参数,所述铣削参数可以包括下列项中的至少二者:(a)散焦强度,(b)铣削工艺的持续时间,(c)在铣削工艺中供应给物镜的偏置电压,(d)离子束能量,和(e)离子束电流密度;以及(ii)通过在保持铣削参数的同时应用铣削工艺来形成凹坑,其中应用铣削工艺包括将散焦的离子束引导到多层式对象上。

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01-12-2023 дата публикации

Dispositif à faisceau d’électrons pour le traitement d’une surface

Номер: FR3136104A1
Автор: Pascal Sortais
Принадлежит: Polygon Physics

Dispositif à faisceau d’électrons pour le traitement d’une surface La présente description concerne un dispositif à faisceaux d’électrons (100) comprenant :- une chambre de traitement (130) ayant une direction longitudinale (Z) ;- au moins une source de faisceau d’électrons (110), chaque source étant adaptée à émettre un faisceau d’électrons dans un plan faisceau (PF) sensiblement transversal à la direction longitudinale de manière à induire un plasma ou un point d’évaporation dans la chambre de traitement pour le traitement d’une surface d’une pièce (106) ;- au moins un premier orifice (122) de passage du faisceau d’électrons dans ladite chambre de traitement, le diamètre du cercle minimal dans lequel s’inscrit ledit premier orifice étant inférieur ou égal à un huitième, par exemple inférieur ou égal à un dixième, de la plus petite dimension (D3) d’une section transversale de la chambre de traitement prise dans le plan faisceau. Figure pour l'abrégé : Fig. 1

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15-08-2023 дата публикации

一种动态可控超宽幅高频响离子源调控方法

Номер: CN113182944B

本发明公开了一种动态可控超宽幅高频响离子源调控方法,包括在迭代加工时进行离子束加工驻留时间解算;根据驻留时间结算结果选择机床合适的运动轴速度V;根据光学元件初始的面形误差、运动轴速度V动态解算离子源的工艺参数,并生成对应的数控程序对光学元件进行加工。本发明能够实时调控离子束抛光的去除函数,不仅能够提升离子束抛光的精度和效率,同时还可以降低对机床运动系统的需求以及损伤层深度,可用于高精度修形、质量修调以及光学元件表面特性调控等领域,具有高精度和效率兼备、调节的范围广、可操作性强、经济实用性强、应用前景广阔等优点。

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10-12-2020 дата публикации

Milling a multi-layered object

Номер: WO2020247161A1
Автор: Yehuda ZAR

A miller, a non-transitory computer readable medium, and a method for milling a multi-layered object. The method may include (i) receiving or determining milling parameters related to a milling process, the milling parameters may include at least two out of (a) a defocus strength, (b) a duration of the milling process, (c) a bias voltage supplied to an objective lens during the milling process, (d) an ion beam energy, and (e) an ion beam current density, and (ii) forming a crater by applying the milling process while maintaining the milling parameters, wherein the applying of the milling process includes directing a defocused ion beam on the multi-layered object.

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15-06-2003 дата публикации

Verfahren zur herstellung atomar scharfer schneidklingen.

Номер: ATE240821T1
Автор: Martin H Newman
Принадлежит: Martin H Newman

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20-10-2023 дата публикации

イオンミリング装置

Номер: JP7366152B2
Принадлежит: Hitachi High Tech Corp

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06-02-2024 дата публикации

Ion milling device

Номер: US11894213B2
Принадлежит: Hitachi High Tech Corp

An ion milling device capable of high-speed milling is realized even for a specimen containing a material having an imide bond. Therefore, the ion milling device includes: a vacuum chamber 6 configured to hold a specimen 3 in a vacuum atmosphere; an ion gun 1 configured to irradiate the specimen with a non-focused ion beam 2; a vaporization container 17 configured to store a mixed solution 13 of a water-soluble ionic liquid and water; and nozzles 11, 12 configured to supply water vapor obtained by vaporizing the mixed solution to a vicinity of a surface of the specimen processed by the ion beam.

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30-11-2023 дата публикации

Systems and methods for optimizing full horizontal scanned beam distance

Номер: WO2023229857A1
Принадлежит: Applied Materials, Inc.

Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a second beam current of the ion beam at the second Faraday cup, and determining an optimal scan distance of the ion beam across the intended beam-scan area based on the first beam current and the second beam current.

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15-03-2024 дата публикации

离子铣削装置

Номер: CN112313770B
Автор: 金子朝子, 高须久幸
Принадлежит: Hitachi High Technologies Corp

本发明提供一种对含有具有酰亚胺键的材料的试样也能够进行高速铣削加工的离子铣削装置。因此,离子铣削装置具有:将试样(3)保持在真空气氛中的真空腔室(6);向试样照射非聚焦离子束(2)的离子枪(1);储存水溶性离子液体与水的混合溶液(13)的气化容器(17);以及将使混合溶液气化而得到的水蒸气供给至利用离子束加工的试样加工面附近的喷嘴(11、12)。

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28-03-2024 дата публикации

Verfahren, Vorrichtung und Computerprogrammprodukt zum Bearbeiten eines Körpers, insbesondere eines Spiegelkörpers eines EUV-Spiegels

Номер: DE102022210262A1
Автор: Michael Luebben
Принадлежит: CARL ZEISS SMT GMBH

Verfahren zum Bearbeiten eines Körpers (20), insbesondere eines Spiegelkörpers eines EUV-Spiegels, bei dem ein Ionenstrahl (18) auf eine zu bearbeitende Oberfläche (21) des Körpers (20) gerichtet wird, um Material von der Oberfläche (21) des Körpers (20) abzutragen. Der Ionenstrahl (18) wird entlang einer Bahn (22, 23, 24, 25) über die Oberfläche (21) geführt, wobei die Bahn (22, 23, 24, 25) eine erste Teilbahn (22) und eine zeitlich nach der ersten Teilbahn (22) liegende zweite Teilbahn (23) umfasst, wobei der Ionenstrahl (18) während der ersten Teilbahn (22) die gesamte Oberfläche (21) überstreicht und wobei der Ionenstrahl (18) während der zweiten Teilbahn (23) die gesamte Oberfläche (21) überstreicht. Die Erfindung betrifft auch eine Vorrichtung und ein Computerprogrammprodukt zum Bearbeiten eines Körpers.

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30-11-2023 дата публикации

Systems and methods for optimizing full horizontal scanned beam distance

Номер: US20230386785A1
Принадлежит: Applied Materials Inc

Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a second beam current of the ion beam at the second Faraday cup, and determining an optimal scan distance of the ion beam across the intended beam-scan area based on the first beam current and the second beam current.

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13-10-2016 дата публикации

イオン照射による被覆材の脱膜方法および脱膜装置

Номер: WO2016163278A1
Принадлежит: 新明和工業株式会社

 PCD(多結晶ダイヤモンド)のような無機物で被覆された工具や機械部品等を再生使用が可能となるように脱膜する方法であって、イオン照射の際に被脱膜基材(被覆材)に死角を生じ難く、温度的に基材(金属製部材)に脆性相を生じ難く、かつ、経済的な速度で脱膜が実行できる脱膜方法を提供することを課題とする。 金属製部材の表面に無機物からなる被膜が付いてなる被覆材(1)へイオン流(7)を照射して、前記金属製部材から前記被膜を剥離する脱膜方法であって、被覆材(1)を2以上のイオン流(7)が重なるイオン流集中部(7A)に設置し、被覆材(1)へ正負バイアスを付加せずに、被覆材(1)へイオン流(7)を照射することを特徴とする脱膜方法によって上記課題を解決できる。

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04-01-2024 дата публикации

試料加工装置および試料加工方法

Номер: JP7407772B2
Принадлежит: Jeol Ltd

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07-12-2023 дата публикации

Dispositif a faisceau d'electrons pour le traitement d'une surface

Номер: WO2023232640A1
Автор: Pascal Sortais
Принадлежит: Polygon Physics

La présente description concerne un dispositif à faisceaux d'électrons (100) comprenant : - une chambre de traitement (130) ayant une direction longitudinale (Z); - au moins une source de faisceau d'électrons (110), chaque source étant adaptée à émettre un faisceau d'électrons dans un plan faisceau (PF) sensiblement transversal à la direction longitudinale de manière à induire un plasma ou un point d'évaporation dans la chambre de traitement pour le traitement d'une surface d'une pièce (106); ladite au moins une source de faisceau d'électrons étant externe à la chambre de traitement; - une chambre de pompage (120) reliée à une première pompe à vide (126), à la chambre de traitement et à la au moins une source de faisceau d'électrons, la chambre de pompage étant positionnée entre ladite chambre de traitement et ladite au moins une source de faisceau d'électrons, et étant adaptée à réaliser un pompage sous vide différentiel de ladite chambre de traitement; - au moins un premier orifice (122) de passage du faisceau d'électrons entre la chambre de traitement et la chambre de pompage; et - au moins un deuxième orifice (124) de passage du faisceau d'électrons entre la chambre de pompage et la au moins une source de faisceau d'électrons.

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02-11-2017 дата публикации

イオンビーム照射装置及びイオンビーム照射方法

Номер: WO2017188132A1
Автор: 宏 稲実
Принадлежит: 日新電機株式会社

基板(W)を保持する基板ホルダ(3)と、基板ホルダ(3)を保持された基板(W)の中心部(Wa)周りに回転させる回転機構(4)と、基板ホルダ(3)及び回転機構(4)を移動方向(D)に沿って往復移動させる往復移動機構(5)と、基板(W)に対してイオンビーム(IB)を照射するイオンビーム照射部(6)とを備え、イオンビーム(IB)は、移動方向(D)に沿ってビーム電流密度が所定値以上である中央領域(IBx)とビーム電流密度が所定値未満である周辺領域(IBy)とを有し、中央領域(IBx)における移動方向(D)に直交する方向の寸法が、基板(W)における移動方向(D)に直交する方向の寸法よりも大きいものであり、制御装置(7)が、基板ホルダ(3)に保持された基板(W)を前記往復移動の両端でも基板(W)の一部がビーム照射範囲に重なるように往復移動させるとともに、基板(W)を往復移動中に連続回転させるものである。

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06-03-2018 дата публикации

Method of producing a freestanding thin film of nano-crystalline graphite

Номер: US9908778B2

A freestanding thin film of nano-crystalline graphite is described, as well as a method of producing a freestanding thin film of nano-crystalline graphite including: providing a freestanding thin film of amorphous carbon, heating the freestanding thin film to a high temperature in an inert atmosphere or in a vacuum; and allowing the freestanding thin film to cool down, as a result of which a freestanding thin film of nano-crystalline graphite is formed. The films can be used, for example, as phase plates in a Transmission Electron Microscope.

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07-04-2016 дата публикации

Method of Producing a Freestanding Thin Film of Nano-Crystalline Carbon

Номер: US20160096734A2

A freestanding thin film of nano-crystalline graphite is described, as well as a method of producing a freestanding thin film of nano-crystalline graphite including: providing a freestanding thin film of amorphous carbon, heating the freestanding thin film to a high temperature in an inert atmosphere or in a vacuum; and allowing the freestanding thin film to cool down, as a result of which a freestanding thin film of nano-crystalline graphite is formed. The films can be used, for example, as phase plates in a Transmission Electron Microscope.

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01-05-2009 дата публикации

Method of making atomically sharp iridium tip and iridium needle

Номер: TW200919485A
Принадлежит: Academia Sinica

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08-10-2012 дата публикации

워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치 및 시스템

Номер: KR20120109641A

워크피스를 밀링하기 위해 이온빔을 지향시키고 다수회 편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치 및 시스템이 개시된다. 상기 방법은 이온빔을 제공하는 단계와; 그리고 지향되고 다수회 편향된 이온빔을 제공하기 위해, 상기 제공된 이온빔을 지향시키고 적어도 2번 편향시키는 단계를 포함하며, 상기 지향되고 다수회 편향된 이온빔은 워크피스의 표면쪽으로 지향되고, 그 위에 입사되고 충돌하여, 표면을 밀링한다. 상기 장치는 이온빔 소스 어셈블리와; 그리고 지향되고 다수회 편향된 이온빔을 형성하기 위해, 제공되는 이온빔을 지향시키고 적어도 2번 편향시키는 이온빔 지향 및 다수회 편향 어셈블리를 포함하며, 상기 지향되고 다수회 편향된 이온빔은 워크피스의 표면쪽으로 지향되고, 그 위에 입사되고 충돌하여, 워크피스의 표면을 밀링한다.

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31-05-2017 дата публикации

通过离子照射进行的包覆件的除膜方法及除膜装置

Номер: CN106796863A
Принадлежит: Shinmaywa Industries Ltd

本发明以提供一种除膜方法为技术问题,该除膜方法是对由像PCD(聚晶金刚石)那样的无机物包覆的刀具、机械零件等进行除膜以能够进行再利用的方法,进行离子照射时在被除膜基材(包覆件)不易产生死角,在温度方面在基材(金属制构件)不易产生脆性相,并且,能够经济且快速地进行除膜。该除膜方法是向在金属制构件的表面附着由无机物构成的覆膜而成的包覆件(1)照射离子流(7)、从所述金属制构件剥离所述覆膜的除膜方法,其特征在于,将包覆件(1)设置在两个以上的离子流(7)重叠的离子流集中部(7A),不向包覆件(1)施加正负偏压地向包覆件(1)照射离子流(7),利用这样的除膜方法能够解决所述技术问题。

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16-12-2023 дата публикации

優化離子束的掃描束距離的方法、設備及非暫態電腦可讀存儲介質

Номер: TW202349436A
Принадлежит: 美商應用材料股份有限公司

本文中提供一種優化加速器束的全水平掃描束距離的方式。在一個方式中,一種方法可包括:沿著預期束掃描區域的第一側對第一法拉第杯進行定位;沿著預期束掃描區域的第二側對第二法拉第杯進行定位;沿著預期束掃描區域的第一側及第二側對離子束進行掃描;在第一法拉第杯處測量離子束的第一束電流且在第二法拉第杯處測量離子束的第二束電流;以及基於第一束電流及第二束電流來確定離子束的跨越預期束掃描區域的最佳掃描距離。

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04-04-2024 дата публикации

Verfahren, vorrichtung und computerprogrammprodukt zum bearbeiten eines körpers, insbesondere eines spiegelkörpers eines euv-spiegels

Номер: WO2024068269A1
Автор: Michael LUBBEN
Принадлежит: CARL ZEISS SMT GMBH

Verfahren zum Bearbeiten eines Körpers (20), insbesondere eines Spiegelkörpers eines EUV-Spiegels, bei dem ein Ionenstrahl (18) auf eine zu bearbeitende Oberfläche (21) des Körpers (20) gerichtet wird, um Material von der Oberfläche (21) des Körpers (20) abzutragen. Der Ionenstrahl (18) wird entlang einer Bahn (22, 23, 24, 25) über die Oberfläche (21) geführt, wobei die Bahn (22, 23, 24, 25) eine erste Teilbahn (22) und eine zeitlich nach der ersten Teilbahn (22) liegende zweite Teilbahn (23) umfasst, wobei der Ionenstrahl (18) während der ersten Teilbahn (22) die gesamte Oberfläche (21) überstreicht und wobei der Ionenstrahl (18) während der zweiten Teilbahn (23) die gesamte Oberfläche (21) überstreicht. Die Erfindung betrifft auch eine Vorrichtung und ein Computerprogrammprodukt zum Bearbeiten eines Körpers.

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19-06-2024 дата публикации

Způsob odstranění hmoty

Номер: CZ310048B6
Принадлежит: Tescan Group, A.S.

Předmětem vynálezu je způsob rovnoměrného odstranění materiálu z povrchu vzorku odprašováním pomocí skenování povrchu fokusovaným iontovým svazkem a současné pozorování tohoto vzorku během odprašování. Rovnoměrného odprašování různých materiálů je dosaženo odprašováním pod vysokým úhlem z více směrů, přičemž tyto směry jsou vzájemně otočeny o nenulový úhel.

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29-06-2017 дата публикации

イオン照射による被覆材の脱膜方法および脱膜装置

Номер: JPWO2016163278A1
Принадлежит: Shinmaywa Industries Ltd

PCD(多結晶ダイヤモンド)のような無機物で被覆された工具や機械部品等を再生使用が可能となるように脱膜する方法であって、イオン照射の際に被脱膜基材(被覆材)に死角を生じ難く、温度的に基材(金属製部材)に脆性相を生じ難く、かつ、経済的な速度で脱膜が実行できる脱膜方法を提供することを課題とする。金属製部材の表面に無機物からなる被膜が付いてなる被覆材(1)へイオン流(7)を照射して、前記金属製部材から前記被膜を剥離する脱膜方法であって、被覆材(1)を2以上のイオン流(7)が重なるイオン流集中部(7A)に設置し、被覆材(1)へ正負バイアスを付加せずに、被覆材(1)へイオン流(7)を照射することを特徴とする脱膜方法によって上記課題を解決できる。

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20-09-2017 дата публикации

イオン照射による被覆材の脱膜方法および脱膜装置

Номер: JP6198991B2
Принадлежит: Shinmaywa Industries Ltd

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06-02-2017 дата публикации

이온 조사에 의한 피복재의 탈막 방법 및 탈막 장치

Номер: KR20170013308A

PCD(다결정 다이아몬드)와 같은 무기물로 피복된 공구나 기계 부품 등을 재생 사용이 가능해지도록 탈막하는 방법으로서, 이온 조사시에 피탈막 베이스재(피복재)에 사각을 발생시키기 어렵고, 온도적으로 베이스재(금속제 부재)에 취성 상을 발생시키기 어려우며 경제적인 속도로 탈막이 실행될 수 있는 탈막 방법을 제공하는 것을 과제로 한다. 금속제 부재의 표면에 무기물로 이루어지는 피막이 붙어 이루어지는 피복재(1)에 이온류(7)를 조사하여 상기 금속제 부재로부터 상기 피막을 박리하는 탈막 방법으로서, 피복재(1)를 2개 이상의 이온류(7)가 겹치는 이온류 집중부(7A)에 설치하고, 피복재(1)에 양음 바이어스를 부가하지 않고 피복재(1)에 이온류(7)를 조사하는 것을 특징으로 하는 탈막 방법에 따라 상기 과제를 해결할 수 있다.

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28-02-2017 дата публикации

Covering material stripping method and stripping device using ion irradiation

Номер: IL249684A0
Автор:
Принадлежит: Shinmaywa Ind Ltd

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20-07-2017 дата публикации

Covering material stripping method and stripping device using ion irradiation

Номер: US20170207065A1
Принадлежит: Shinmaywa Industries Ltd

A de-coating method includes: exposing a coated body in which a coating made of an inorganic material is formed on a surface of the metal body to ion flows to peel off the coating from the metal body, wherein the coated body is placed at an ion flow-concentrated portion where two or more ion flows overlap each other, and is exposed to the ion flows without addition of a positive or negative bias to the coated body. As gases for use in generating ions from plasma, oxygen and CF 4 that promote de-coating through a chemical reaction are preferably used in addition to Ar that performs de-coating under the physical action of ion collision and stabilizes plasma.

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12-07-2017 дата публикации

Covering material stripping method and stripping device using ion irradiation

Номер: EP3168857A4
Принадлежит: Shinmaywa Industries Ltd

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29-10-2020 дата публикации

Covering material stripping method and stripping device using ion irradiation

Номер: IL249684B
Автор:
Принадлежит: Shinmaywa Ind Ltd

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20-12-2023 дата публикации

High-energy particle surface treatment system

Номер: NL2032149B1
Автор: Chen Xiaodong
Принадлежит: Changzhou Xinli Ion Tech Co Ltd

Disclosed is a high—energy particle surface treatment system. The system includes a base, an electric control box is connected to the base, an exhaust device is connected to the base and a working chamber, an adjusting device is connected to the working chamber, 5 a product rack is arranged at the adjusting device, a sealing door is connected to the working chamber by means of a hinge, and a guide—in device is connected to the working chamber and penetrates the working chamber to be connected to an ion energizer. According to the high—energy particle surface treatment system, a low—stress 10 and high—precision machining method is provided, and by means of bombardment of high—energy ions on surfaces of products, molecules and atoms on surfaces of metal and nonmetal products can be promoted to migrate, so as to treat the surfaces of the products. Moreover, the system is suitable for wide application.

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23-05-2007 дата публикации

Directed multi-deflected ion beam milling of a work piece and determining and controlling extent thereof

Номер: EP1787310A2

Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam (10); and directing and at least twice deflecting the provided ion beam, for forming a directed multi deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly (110); and an ion beam directing and multi-deflecting assembly (120), for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.

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17-01-2022 дата публикации

다층 물체의 밀링

Номер: KR20220006660A
Автор: 예후다 자르

다층 물체를 밀링하기 위한, 밀러, 비일시적 컴퓨터 판독가능 매체, 및 방법. 방법은 (i) 밀링 프로세스에 관련된 밀링 파라미터들을 수신하거나 결정하는 단계 - 밀링 파라미터들은 (a) 디포커스 강도, (b) 밀링 프로세스의 지속기간, (c) 밀링 프로세스 동안 대물 렌즈에 공급되는 바이어스 전압, (d) 이온 빔 에너지, 및 (e) 이온 빔 전류 밀도 중 적어도 2개를 포함할 수 있음 -, 및 (ii) 밀링 파라미터들을 유지하면서 밀링 프로세스를 적용함으로써 크레이터를 형성하는 단계 - 밀링 프로세스의 적용은 디포커싱된 이온 빔을 다층 물체 상에 지향시키는 것을 포함함 - 를 포함할 수 있다.

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05-08-2022 дата публикации

多層物体のミリング

Номер: JP2022535279A
Автор: イェフダ ザー

多層物体をミリングするためのミリング装置、非一過性コンピュータ可読媒体、および方法。本方法は、(i)ミリングプロセスに関連するミリングパラメータを受信または決定することであって、ミリングパラメータが、(a)デフォーカス強度、(b)ミリングプロセスの持続時間、(c)ミリングプロセス中に対物レンズに供給されるバイアス電圧、(d)イオンビームのエネルギー、および(e)イオンビームの電流密度のうちの少なくとも2つを含むことができる、受信または決定することと、(ii)ミリングパラメータを維持しながらミリングプロセスを適用することによってクレータを形成することであって、ミリングプロセスを適用することが多層物体上にデフォーカスイオンビームを向けることを含む、形成することと、を含むことができる。 【選択図】図8

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31-07-2024 дата публикации

多層物体のミリング

Номер: JP7526209B2
Автор: イェフダ ザー

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27-06-2024 дата публикации

Apparatus and Method for Fabrication of Shield Plate

Номер: US20240208762A1
Принадлежит: Jeol Ltd

There is provided a shield plate fabrication apparatus capable of fabricating a shield plate easily. The shield plate is included in a sample milling apparatus which mills a sample by shielding a part of the sample with the shield plate and irradiating the sample with a charged particle beam. The fabrication apparatus includes: a base plate holding shaft for rotatably holding a base plate and winding tape around the base plate; and a tension mechanism for applying tension to the tape while it is being wound around the base plate.

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19-01-2023 дата публикации

Specimen Machining Device and Specimen Machining Method

Номер: US20230015109A1
Принадлежит: Jeol Ltd

A specimen machining device includes an illumination system that illuminates a specimen; a camera that photographs the specimen; and a processing unit that controls the illumination system and the camera, and acquires a machining control image which is used for controlling an ion source and a display image which is displayed on a display unit. The processing unit controls the illumination system to illuminate the specimen under a machining illumination condition; acquires the machining control image by controlling the camera to photograph the specimen illuminated under the machining control illumination condition; controls the ion source based on the machining control image; controls the illumination system to illuminate the specimen under a display illumination condition which is different from the machining control illumination condition; acquires the display image by controlling the camera to photograph the specimen illuminated under the display illumination condition; and displays the display image on the display unit.

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21-07-2005 дата публикации

電気的および物理的特徴付けのためのmosfetデバイスの裏面層剥離

Номер: JP2005197735A
Принадлежит: International Business Machines Corp

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