Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing

19-03-2013 дата публикации

Номер:

US8399056B2

Автор: Christian Dussarrat, Nicolas Blasco

Принадлежит: LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

C C0 C07 C07F C07F1 C07F17 C07F17/C07F17/0 C07F17/00 C07F7 C07F7/C07F7/0 C07F7/00 C07F7/003 C2 C23 C23C C23C1 C23C16 C23C16/C23C16/1 C23C16/18 C23C16/3 C23C16/30 C23C16/308 C23C16/34 C23C16/4 C23C16/40 C23C16/403 C23C16/405 C23C16/407 C23C16/44 C23C16/448 C23C16/45 C23C16/455 C23C16/4555 C23C16/45553 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/021 H01L21/0214 H01L21/02148 H01L21/0215 H01L21/02159 H01L21/0217 H01L21/02178 H01L21/0218 H01L21/02181 H01L21/02189 H01L21/0219 H01L21/02192 H01L21/02194 H01L21/022 H01L21/0220 H01L21/02205 H01L21/0221 H01L21/02211 H01L21/02216 H01L21/0227 H01L21/02271 H01L21/0228 H01L21/2 H01L21/20 H01L21/205 H01L21/3 H01L21/31 H01L21/314 H01L21/3141 H01L21/316 H01L21/3164 H01L21/31641 H01L21/31645 H01L21/6 H01L21/67 H01L21/672 H01L21/6720 H01L21/67207 H01L21/8 H01L21/82 H01L21/823 H01L21/8238

IPC - классификация

C C0 C07 C07F C07F7 C07F7/C07F7/0 C07F7/00 C07F7/003 C08 C08F C08F1 C08F10 C08F10/C08F10/0 C08F10/00 C2 C23 C23C C23C1 C23C16 C23C16/C23C16/1 C23C16/18

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