Substrate process device and method for manufacturing semiconductor device .

Substrate process device and method for manufacturing semiconductor device

Номер патента: KR101369600B1
Опубликовано: 04-03-2014
Автор(ы): 가즈유끼 오꾸다, 고이찌 혼다, 마모루 우메모또, 마사유끼 아사이
Принадлежит: 가부시키가이샤 히다치 고쿠사이 덴키
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Номер патента: WO2017037927A1. Автор: 和宏原田,芦原　洋司,中谷　公彦. Владелец: 株式会社日立国際電気. Дата публикации: 2017-03-09.

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Method for manufacturing a recessed semiconductor device

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