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Integrated circuit and method of forming the same

Номер патента: US11552069B1
Опубликовано: 10-01-2023
Автор(ы): Chih-Liang Chen, Hui-Zhong ZHUANG, Jung-Chan YANG, Kuang-Ching CHANG, Kuo-Nan Yang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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