PROCESS FOR MANUFACTURING A THIN FILM TRANSISTOR AND TRANSISTOR THUS MANUFACTURED
Номер патента: FR2573248B1
Опубликовано: 21-06-1991
Автор(ы): Hisao Hayashi, Takashi Noguchi
Принадлежит: Sony Corp
Опубликовано: 21-06-1991
Автор(ы): Hisao Hayashi, Takashi Noguchi
Принадлежит: Sony Corp
Method for manufacturing nonvolatile memory thin film device by using neutral particle beam generation apparatus
Номер патента: US20170301547A1. Автор: Jin Nyeong JANG,Mun Pyo Hong. Владелец: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION. Дата публикации: 2017-10-19.