Semiconductor storage cell has a modulation region arranged between a first gate electrode of a gate electrode arrangement and an insulating region
Номер патента: DE10212926A1
Опубликовано: 16-10-2003
Автор(ы): Christine Dehm, Guenter Schmid, Hagen Klauk, Marcus Halik, Thomas Haneder, Thomas Mikolajick
Принадлежит: INFINEON TECHNOLOGIES AG
Опубликовано: 16-10-2003
Автор(ы): Christine Dehm, Guenter Schmid, Hagen Klauk, Marcus Halik, Thomas Haneder, Thomas Mikolajick
Принадлежит: INFINEON TECHNOLOGIES AG
Реферат: Semiconductor storage cell has a modulation region (M) arranged between first gate electrode (G1) of gate electrode arrangement,and an insulating region. (M) is made from a material which can be controllably modulated with respect to its electrical and/or its wide material properties between at least two states. The channel region can be electromagnetically influenced according to the states of the modulation material, especially when there is an electrical potential difference between the first gate electrode and the source/drain regions (SD1, SD2). The electrical conductivity of the channel region can be controlled via the states of the modulation material and/or via the state changes. The modulation region is made from an organic and/or inorganic material, especially in the form of a mono-layer.
Semiconductor storage element, semiconductor storage device, and semiconductor system
Номер патента: US20190244653A1. Автор: Masanori Tsukamoto. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2019-08-08.