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Dual work function gate electrodes obtained through local thickness-limited silicidation

Номер патента: US20060019437A1
Опубликовано: 26-01-2006
Автор(ы): Luigi Colombo, Mark Visokay, Robert Murto
Принадлежит: Texas Instruments Inc
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Номер патента: US20240021729A1. Автор: Ming-Hsi Yeh,Chun-Neng LIN,Hung-Chin Chung,Hsin-Yun Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

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Номер патента: US12021145B2. Автор: Ming-Hsi Yeh,Chun-Neng LIN,Hung-Chin Chung,Hsin-Yun Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

Semiconductor devices with gate electrodes on separate sets of high-k dielectric layers

Номер патента: US09991357B2. Автор: Hyeok-Jun Son,Hoonjoo NA,Suyoung BAE,Jaeyeol Song,Sangjin Hyun,Wandon Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-05.

Field effect transistors having multiple effective work functions

Номер патента: US09484427B2. Автор: Balaji Kannan,Takashi Ando,Min Dai,Unoh Kwon,Siddarth A. Krishnan. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-01.

Forming MOSFET structures with work function modification

Номер патента: US10147725B2. Автор: Koji Watanabe,Gen Tsutsui,Robert R. Robison,Gauri Karve,Ruqiang Bao,Reinaldo A. Vega,Derrick Liu. Владелец: International Business Machines Corp. Дата публикации: 2018-12-04.

Forming mosfet structures with work function modification

Номер патента: US20170133272A1. Автор: Koji Watanabe,Gen Tsutsui,Robert R. Robison,Gauri Karve,Ruqiang Bao,Reinaldo A. Vega,Derrick Liu. Владелец: International Business Machines Corp. Дата публикации: 2017-05-11.

Method of fabricating semiconductor device using a work function control film

Номер патента: US20120122309A1. Автор: Jeong-hee Han,Sang-Jin Hyun,Hoon-joo Na,Hu-Yong Lee,Hong-bae Park,Hye-Lan Lee,Hyung-seok HONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-05-17.

Recessed access devices and gate electrodes

Номер патента: US09502516B2. Автор: Kunal R. Parekh,Casey Smith,Jasper S. Gibbons,Darren V. Young. Владелец: Micron Technology Inc. Дата публикации: 2016-11-22.

Semiconductor device structure with work function layer and method for forming the same

Номер патента: US20230111895A1. Автор: Po-Chi WU,Ming-Chia Tai,Chang-Yin Chen,Wen-Han Fang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-13.

Semiconductor device structure with work function layer and method for forming the same

Номер патента: US12002871B2. Автор: Po-Chi WU,Ming-Chia Tai,Chang-Yin Chen,Wen-Han Fang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Mask free protection of work function material portions in wide replacement gate electrodes

Номер патента: US20130307086A1. Автор: Shom Ponoth,Chih-Chao Yang,David V. Horak,Charles W. Koburger, III,Marc A. Bergendahl. Владелец: International Business Machines Corp. Дата публикации: 2013-11-21.

Work function adjustment with the implant of lanthanides

Номер патента: US20110223757A1. Автор: Manfred Ramin,Husam Alshareef,Michael F. Pas. Владелец: Texas Instruments Inc. Дата публикации: 2011-09-15.

Work function adjustment with the implant of lanthanides

Номер патента: US20130224940A1. Автор: Manfred Ramin,Michael F. Pas,Husam N. Alshareef. Владелец: Texas Instruments Inc. Дата публикации: 2013-08-29.

Novel Structure for Metal Gate Electrode and Method of Fabrication

Номер патента: US20220216317A1. Автор: Ru-Shang Hsiao,I-Shan Huang,Ching-Hwanq Su,Pohan Kung,Ying Hsin Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-07.

Structure for metal gate electrode and method of fabrication

Номер патента: US11961891B2. Автор: Ru-Shang Hsiao,I-Shan Huang,Ching-Hwanq Su,Pohan Kung,Ying Hsin Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-16.

Novel structure for metal gate electrode and method of fabrication

Номер патента: US20230387230A1. Автор: Ru-Shang Hsiao,I-Shan Huang,Ching-Hwanq Su,Pohan Kung,Ying Hsin Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Fully silicided gate electrodes and method of making the same

Номер патента: WO2008014038A1. Автор: Kern Rim,William K. Henson. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2008-01-31.

Integrated circuit devices having contact holes exposing gate electrodes in active regions

Номер патента: US7034365B2. Автор: Myoung-kwan Cho,Jeung-Hwan Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-04-25.

Integrated circuit devices having contact holes exposing gate electrodes in active regions and methods of fabricating the same

Номер патента: US20060141715A1. Автор: Myoung-kwan Cho,Jeung-Hwan Park. Владелец: Individual. Дата публикации: 2006-06-29.

Standard cell and ic structure with trench isolation through active regions and gate electrodes

Номер патента: US20240274603A1. Автор: Hong Yu,James P. Mazza,Navneet K. Jain,David Charles PRITCHARD. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-08-15.

Integrated circuits having dummy gate electrodes and methods of forming the same

Номер патента: US9275994B2. Автор: Chan-Hong Chern,mei-hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-01.

Gate electrode with a shrink spacer

Номер патента: US20150091068A1. Автор: Sven Beyer,Alexander Ebermann,Tom Hasche,Gerhard Lembach. Владелец: Globalfoundries Inc. Дата публикации: 2015-04-02.

Semicondoctor structure with gate electrode doping

Номер патента: US20220216206A1. Автор: Yoshikazu Moriwaki,Mika Yoshida. Владелец: Micron Technology Inc. Дата публикации: 2022-07-07.

Standard cell and ic structure with trench isolation through active regions and gate electrodes

Номер патента: EP4418320A1. Автор: Hong Yu,James P. Mazza,Navneet K. Jain,David Charles PRITCHARD. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-08-21.

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Номер патента: US09847417B2. Автор: Hirokazu Sayama,Hidekazu Oda,Kazunobu Ohta,Kouhei Sugihara. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-19.

Semiconductor device having a gate stack with tunable work function

Номер патента: US09799656B2. Автор: Vijay Narayanan,Unoh Kwon,Ruqiang Bao,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2017-10-24.

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Номер патента: US09614081B2. Автор: Hirokazu Sayama,Hidekazu Oda,Kazunobu Ohta,Kouhei Sugihara. Владелец: Renesas Electronics Corp. Дата публикации: 2017-04-04.

Gate stack with tunable work function

Номер патента: US09583400B1. Автор: Vijay Narayanan,Unoh Kwon,Ruqiang Bao,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2017-02-28.

Semiconductor device having a gate stack with tunable work function

Номер патента: US09559016B1. Автор: Vijay Narayanan,Unoh Kwon,Ruqiang Bao,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2017-01-31.

Integrated circuits with selective gate electrode recess

Номер патента: US09418898B2. Автор: Christopher J. WIEGAND,Michael L. Hattendorf,Mark Y. Liu,Srijit Mukherjee,Tyler J WEEKS. Владелец: Intel Corp. Дата публикации: 2016-08-16.

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Номер патента: US09412867B2. Автор: Hirokazu Sayama,Hidekazu Oda,Kazunobu Ohta,Kouhei Sugihara. Владелец: Renesas Electronics Corp. Дата публикации: 2016-08-09.

Replacement gate electrode with planar work function material layers

Номер патента: WO2013012453A1. Автор: Keith Kwong Hon Wong,Dechao Guo,Shu-Jen Han,Jun Yuan. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-01-24.

Replacement gate electrode with planar work function material layers

Номер патента: US20140042561A1. Автор: Keith Kwong Hon Wong,Dechao Guo,Shu-Jen Han,Jun Yuan. Владелец: International Business Machines Corp. Дата публикации: 2014-02-13.

CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same

Номер патента: US11961768B2. Автор: Hsien-Ming Lee,Yu-Sheng Wang,Da-Yuan Lee,Ya-Wen Chiu,Kai-Cyuan Yang,Chih-Hsiang Fan,Kun-Wa Kuok. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-16.

Semiconductor device having shared gate electrode and fabrication thereof

Номер патента: WO2000033381A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2000-06-08.

CMOS Vt control integration by modification of metal-containing gate electrodes

Номер патента: US09698020B2. Автор: Toshio Hasegawa,Genji Nakamura. Владелец: Tokyo Electron Ltd. Дата публикации: 2017-07-04.

Semiconductor device having gate electrode and electronic system including the same

Номер патента: EP3968386A1. Автор: SANGHOON Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-16.

Semiconductor transistors having reduced distances between gate electrode regions

Номер патента: US20120126339A1. Автор: Haining S. Yang,Robert C. Wong. Владелец: International Business Machines Corp. Дата публикации: 2012-05-24.

Method for manufacturing semiconductor device including metal gate electrode and semiconductor device

Номер патента: US20090321842A1. Автор: Yoshihisa Matsubara. Владелец: NEC Electronics Corp. Дата публикации: 2009-12-31.

Integrated circuits having dummy gate electrodes and methods of forming the same

Номер патента: US20140217512A1. Автор: Chan-Hong Chern,mei-hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-08-07.

Integrated circuits having dummy gate electrodes and methods of forming the same

Номер патента: US8928088B2. Автор: Chan-Hong Chern,mei-hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-01-06.

Structure and method for mosfet gate electrode landing pad

Номер патента: EP1994563A2. Автор: Carl Radens,Lawrence A. Clevenger,Timothy J. Dalton,Kwong-Hon Wong,Louis C. Hsu,Chih-chao c/o IBM United Kingdom Limited YANG. Владелец: International Business Machines Corp. Дата публикации: 2008-11-26.

Structure and method for mosfet gate electrode landing pad

Номер патента: WO2007127503A2. Автор: Carl Radens,Chih-Chao Yang,Lawrence A. Clevenger,Timothy J. Dalton,Kwong-Hon Wong,Louis C. Hsu. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2007-11-08.

Gate electrode extending into a shallow trench isolation structure in high voltage devices

Номер патента: US12040397B2. Автор: Yun-Chi Wu,Yuan-Cheng Yang,Shih-Jung Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process

Номер патента: US09960160B2. Автор: Kuo-Tai Huang,Donald Y. Chao,Ryan Chia-Jen Chen,Yih-Ann Lin,Yi-Shien Mor. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-01.

Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation

Номер патента: US09935017B2. Автор: Jeong-Yun Lee,Jung-Gun You,Eung-Gwan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-03.

Multiple work function device using GeOx/TiN cap on work function setting metal

Номер патента: US09825122B1. Автор: Takashi Ando,Pouya Hashemi,ChoongHyun Lee. Владелец: International Business Machines Corp. Дата публикации: 2017-11-21.

Semiconductor devices having work function metal films and tuning materials

Номер патента: US09780183B2. Автор: Jae-Yeol Song,Wan-Don Kim,Oh-seong Kwon,Hyeok-Jun Son,Sang-Jin Hyun,Hoon-joo Na,Sung-Kee Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-03.

Electronic device including a multiple channel HEMT and an insulated gate electrode

Номер патента: US09741840B1. Автор: Jia GUO,Peter Moens. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-08-22.

Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation

Номер патента: US09659827B2. Автор: Jeong-Yun Lee,Jung-Gun You,Eung-Gwan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-23.

Gate electrode of field effect transistor

Номер патента: US09589803B2. Автор: Neng-Kuo Chen,Sey-Ping Sun,Clement Hsingjen Wann,Yi-An Lin,Chun-Wei Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-07.

Semiconductor devices including a gate electrode and methods of manufacturing the same

Номер патента: US09508732B2. Автор: Sung-Wook Park,Gyu-Yeol Lee,Sung-Hun Lee,Ki-Yong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-29.

Effective Work Function Tuning Via Silicide Induced Interface Dipole Modulation For Metal Gates

Номер патента: US20230104442A1. Автор: Zhiqiang Wu,Tzer-Min Shen,Kuan-Ting Liu,Szu-Wei Huang,Chung-Wei Wu,Yen-Tien Tung,Yin-Chuan Chuang,Zhi-Ren Xiao,Yung-Chien Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-06.

Gate electrode extending into a shallow trench isolation structure in high voltage devices

Номер патента: US20240339533A1. Автор: Yun-Chi Wu,Yuan-Cheng Yang,Shih-Jung Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Methods of forming semiconductor switching devices having trench-gate electrodes

Номер патента: US6051488A. Автор: Tea-Sun Lee,Sung-Kyu Song. Владелец: Fairchild Korea Semiconductor Ltd. Дата публикации: 2000-04-18.

Methods of Forming CMOS Transistors with High Conductivity Gate Electrodes

Номер патента: US20110136313A1. Автор: JongWon Lee,Boun Yoon,Sang Yeob Han,Chae Lyoung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-06-09.

Integrated circuits with recessed gate electrodes

Номер патента: US10651093B2. Автор: Christopher J. WIEGAND,Michael L. Hattendorf,Mark Y. Liu,Srijit Mukherjee,Tyler J. Weeks. Владелец: Intel Corp. Дата публикации: 2020-05-12.

Field effect transistor stack with tunable work function

Номер патента: US10312157B2. Автор: Vijay Narayanan,Unoh Kwon,Ruqiang Bao,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2019-06-04.

Metal gate electrode of a semiconductor device

Номер патента: US9991375B2. Автор: MING-CHING Chang,Chao-Cheng Chen,Chih-Han Lin,Jr-Jung LIN,Jin-Aun Ng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-05.

Method of fabricating gate electrode using a treated hard mask

Номер патента: US20110250725A1. Автор: HUI Ouyang,Chi-Ming Yang,Shun Wu Lin,Matt Yeh,Fan-yi Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-10-13.

CMOS Vt CONTROL INTEGRATION BY MODIFICATION OF METAL-CONTAINING GATE ELECTRODES

Номер патента: US20160111290A1. Автор: Toshio Hasegawa,Genji Nakamura. Владелец: Tokyo Electron Ltd. Дата публикации: 2016-04-21.

Semiconductor devices having gate electrodes and methods of manufacturing the same

Номер патента: US20200185383A1. Автор: Jin Woo Kim,Sung Eun Kim,Hyun Chul Sagong,Sang Woo Pae,Choelhwyi Bae,Yang Gyeom KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-06-11.

Semiconductor device having shared gate electrode and fabrication thereof

Номер патента: EP1142018A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Advanced Micro Devices Inc. Дата публикации: 2001-10-10.

Semiconductor device having gate electrodes with dopant of different conductive types

Номер патента: US20230411488A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2023-12-21.

Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode

Номер патента: US20140339604A1. Автор: Stephan Kronholz,Markus Lenski,Vassilios Papageorgiou. Владелец: Globalfoundries Inc. Дата публикации: 2014-11-20.

Method for forming fully silicided gate electrodes and unsilicided poly resistors

Номер патента: SG152242A1. Автор: Chih-Hao Wang,Steve Ming Ting. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2009-05-29.

Effective work function tuning via silicide induced interface dipole modulation for metal gates

Номер патента: US11990522B2. Автор: Zhiqiang Wu,Tzer-Min Shen,Kuan-Ting Liu,Szu-Wei Huang,Chung-Wei Wu,Yen-Tien Tung,Yin-Chuan Chuang,Zhi-Ren Xiao,Yung-Chien Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Semiconductor device n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size

Номер патента: US7442632B2. Автор: Takayuki Suzuki,Mitsuhiro Togo. Владелец: NEC Electronics Corp. Дата публикации: 2008-10-28.

Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode

Номер патента: US20100301421A1. Автор: Stephan Kronholz,Markus Lenski,Vassilios Papageorgiou. Владелец: Individual. Дата публикации: 2010-12-02.

Transistor including a high-k metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer

Номер патента: US20110104863A1. Автор: Jan Hoentschel,Sven Beyer,Thilo Scheiper,Markus Lenski. Владелец: Individual. Дата публикации: 2011-05-05.

Method for adjusting effective work function of metal gate

Номер патента: US9831089B2. Автор: Jiang Yan,HONG Yang,Wenwu Wang,Weichun LUO. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-11-28.

Semiconductor device including merged-unmerged work function metal and variable fin pitch

Номер патента: US20150279839A1. Автор: Tenko Yamashita,Zuoguang Liu,Chun-Chen Yeh,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2015-10-01.

Effective work function tuning via silicide induced interface dipole modulation for metal gates

Номер патента: US20240313067A1. Автор: Zhiqiang Wu,Tzer-Min Shen,Kuan-Ting Liu,Szu-Wei Huang,Chung-Wei Wu,Yen-Tien Tung,Yin-Chuan Chuang,Zhi-Ren Xiao,Yung-Chien Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

P-channel transistor having an increased channel mobility due to a compressive stress-inducing gate electrode

Номер патента: US09978869B2. Автор: Yusuke Nonaka,Akihiro Shimizu,Nagatoshi Ooki,Katsuhiko Ichinose. Владелец: Renesas Electronics Corp. Дата публикации: 2018-05-22.

Methods of forming self-aligned contact structures by work function material layer recessing and the resulting devices

Номер патента: US09824920B2. Автор: Hoon Kim,Ruilong Xie,Chanro Park,Min Gyu Sung. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-21.

Method of forming the gate electrode of field effect transistor

Номер патента: US09812551B2. Автор: Neng-Kuo Chen,Sey-Ping Sun,Clement Hsingjen Wann,Yi-An Lin,Chun-Wei Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Method of tuning work function for a semiconductor device

Номер патента: US09812366B2. Автор: Yu-Lien Huang,Tung Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Method of forming complementary metal oxide semiconductor device with work function layer

Номер патента: US09721840B2. Автор: Chien-Chung Huang,Yu-Ping Wang,Chien-Ming Lai,Ya-Huei Tsai,Yu-Ting Tseng. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

Semiconductor device with tunable work function

Номер патента: US09685441B2. Автор: Wei Zhang,Chung-Liang Cheng,Yen-Yu Chen,Wei-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-20.

Semiconductor device with tunable work function

Номер патента: US09548372B2. Автор: Wei Zhang,Chung-Liang Cheng,Yen-Yu Chen,Wei-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-17.

MULTIPLE WORK FUNCTION DEVICE USING GeOx/TiN CAP ON WORK FUNCTION SETTING METAL

Номер патента: US20180374917A1. Автор: Takashi Ando,Pouya Hashemi,ChoongHyun Lee. Владелец: International Business Machines Corp. Дата публикации: 2018-12-27.

MULTIPLE WORK FUNCTION DEVICE USING GeOx/TiN CAP ON WORK FUNCTION SETTING METAL

Номер патента: US20180240865A1. Автор: Takashi Ando,Pouya Hashemi,ChoongHyun Lee. Владелец: International Business Machines Corp. Дата публикации: 2018-08-23.

Gate formation with varying work function layers

Номер патента: US11830936B2. Автор: Stan Chen,Han-Wei Wu,Jin-Dah Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation

Номер патента: US20170221771A1. Автор: Jeong-Yun Lee,Jung-Gun You,Eung-Gwan Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-03.

Method of forming the gate electrode of field effect transistor

Номер патента: US20180069094A1. Автор: Neng-Kuo Chen,Sey-Ping Sun,Clement Hsingjen Wann,Yi-An Lin,Chun-Wei Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-08.

Multiple work function device using GeOx/TiN cap on work function setting metal

Номер патента: US10134833B2. Автор: Takashi Ando,Pouya Hashemi,ChoongHyun Lee. Владелец: International Business Machines Corp. Дата публикации: 2018-11-20.

A semiconductor device having a silicided gate electrode and method of manufacture therefor

Номер патента: WO2005094534A2. Автор: Ping Jiang,Jiong-Ping Lu,Haowen Bu,Shaofeng Yu,Clint Montgomery. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2005-10-13.

Dummy Gate Electrode of Semiconductor Device

Номер патента: US20140349473A1. Автор: MING-CHING Chang,Chih-Han Lin,Jr-Jung LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-11-27.

Gate Formation with Varying Work Function Layers

Номер патента: US20200251578A1. Автор: Stan Chen,Han-Wei Wu,Jin-Dah Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-08-06.

Semiconductor device having gate electrode with multi-layers and electronic system including the same

Номер патента: US11937431B2. Автор: SANGHOON Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-19.

Semiconductor device having gate electrode and electronic system including the same

Номер патента: US20220085047A1. Автор: SANGHOON Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-17.

Reducing gate dielectric material to form a metal gate electrode extension

Номер патента: US20070040227A1. Автор: Mark Doczy,Justin Brask,Suman Datta,Robert Chau,Jack Kavalieros,Matthew Metz. Владелец: Individual. Дата публикации: 2007-02-22.

Semiconductor device including merged-unmerged work function metal and variable fin pitch

Номер патента: US20150357246A1. Автор: Tenko Yamashita,Zuoguang Liu,Chun-Chen Yeh,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2015-12-10.

Apparatus and method of adjusting work-function metal thickness to provide variable threshold voltages in finFETs

Номер патента: US09805982B1. Автор: Min-Hwa Chi,Hui Zang,Jinping Liu. Владелец: Globalfoundries Inc. Дата публикации: 2017-10-31.

Methods and structure to form high K metal gate stack with single work-function metal

Номер патента: US09515164B2. Автор: Balaji Kannan,Takashi Ando,Shahab Siddiqui,Unoh Kwon,Siddarth Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2016-12-06.

Semiconductor device including merged-unmerged work function metal and variable fin pitch

Номер патента: US09437499B2. Автор: Tenko Yamashita,Zuoguang Liu,Chun-Chen Yeh,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2016-09-06.

Method of fabricating gate electrode of CMOS device

Номер патента: US5567642A. Автор: Hyeon S. Kim,Choong H. Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1996-10-22.

Method of fabricating dual gate electrode of CMOS semiconductor device

Номер патента: US7402478B2. Автор: Tae-Hyun AN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-22.

Semiconductor device having work function metal stack

Номер патента: US11823908B2. Автор: Yen-Yu Chen,Chih-Pin TSAO,Shih-Hsun Chang,Yu-Chi LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-21.

Gate electrode extending into a shallow trench isolation structure in high voltage devices

Номер патента: US20230299196A1. Автор: Yun-Chi Wu,Yuan-Cheng Yang,Shih-Jung Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Method of fabricating a semiconductor device including metal gate electrode and electronic fuse

Номер патента: US20090163016A1. Автор: Jin-woo Kim,Min-chul Sun,Hyung-Suk Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-25.

Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode

Номер патента: US8828819B2. Автор: Markus Lenski,Vassilios Papageorgiou,Stephen Kronholz. Владелец: Globalfoundries Inc. Дата публикации: 2014-09-09.

Gate Electrodes of a Semiconductor Device Formed by a Hard Mask and Double Exposure in Combination with a Shrink Spacer

Номер патента: US20120049286A1. Автор: Klaus Gebauer,Sven Beyer,Andreas Hellmich,Steffen Laufer. Владелец: Globalfoundries Inc. Дата публикации: 2012-03-01.

Finfet including a gate electrode having an impurity region and methods of forming the finfet

Номер патента: US20230028496A1. Автор: Young Gwang YOON. Владелец: SK hynix Inc. Дата публикации: 2023-01-26.

Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode

Номер патента: US20130130449A1. Автор: Stephan Kronholz,Markus Lenski,Vassilios Papageorgiou. Владелец: Globalfoundries Inc. Дата публикации: 2013-05-23.

Semiconductor device with work function layer

Номер патента: US20240222371A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-04.

Semiconductor device with work function layer

Номер патента: US20240222370A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-04.

Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (hkmg)

Номер патента: US20110248350A1. Автор: Michael P. Chudzik,William K. Henson,Unoh Kwon. Владелец: International Business Machines Corp. Дата публикации: 2011-10-13.

Work function engineering in transistors including a high dielectric constant gate insulator and metal gate (hkmg)

Номер патента: WO2011127016A1. Автор: Michael P. Chudzik,William K. Henson,Unoh Kwon. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2011-10-13.

A bicmos device having a cmos gate electrode and a bipolar emitter each containing two imurities of the same conductivity type

Номер патента: US20020145167A1. Автор: Toru Yamazaki. Владелец: NEC Corp. Дата публикации: 2002-10-10.

Gate electrode doping method for forming semiconductor integrated circuit microelectronic fabrication with varying effective gate dielectric layer thicknesses

Номер патента: US20030232473A1. Автор: Ih-Chin Chen,Ling-Yen Yeh,Jyh-Chyurn Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2003-12-18.

Different work function metals

Номер патента: US20240321882A1. Автор: Soon-Cheon Seo,Min Gyu Sung,Ruqiang Bao. Владелец: International Business Machines Corp. Дата публикации: 2024-09-26.

Method for tuning the effective work function of a metal

Номер патента: US09892923B2. Автор: Lars-Ake Ragnarsson,Tom Schram,Hendrik F. W. Dekkers. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2018-02-13.

Method of forming a singe metal that performs N and P work functions in high-K/metal gate devices

Номер патента: US09633856B2. Автор: Su-Horng Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Semiconductor device with tunable work function

Номер патента: US20170092644A1. Автор: Wei Zhang,Chung-Liang Cheng,Yen-Yu Chen,Wei-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-30.

Corner rounding in a replacement gate approach based on a sacrificial fill material applied prior to work function metal deposition

Номер патента: US20110104880A1. Автор: Thomas Werner,Frank Richter,Jens Heinrich,Frank Seliger. Владелец: Individual. Дата публикации: 2011-05-05.

Semiconductor device comprising work function metal pattern in boundry region and method for fabricating the same

Номер патента: US20190252393A1. Автор: Jin Woo Hong,Ki Wook JUNG,Seok Han PARK,Ki Seok Lee,Dong Oh KIM,Chan Sic YOON,Ju Yeon JANG,Je Min PARK,Ho ln LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-08-15.

Semiconductor device comprising work function metal pattern in boundry region and method for fabricating the same

Номер патента: US20200295013A1. Автор: Jin Woo Hong,Ki Wook JUNG,Seok Han PARK,Ki Seok Lee,Ho In Lee,Dong Oh KIM,Chan Sic YOON,Ju Yeon JANG,Je Min PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-17.

Device with modified work function layer and method of forming the same

Номер патента: US20230420538A1. Автор: Ming-Hsi Yeh,Kuo-Bin Huang,Chun-Neng LIN,Yu-Shih Wang,Yu-Chi Pan,Kuan-Wei Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-28.

Method for adjusting effective work function of metal gate

Номер патента: US20160240382A1. Автор: Jiang Yan,HONG Yang,Wenwu Wang,Weichun LUO. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2016-08-18.

Method of forming high-K gate electrode structures after transistor fabrication

Номер патента: GB2468445A. Автор: Andy Wei,Andrew M Waite. Владелец: Advanced Micro Devices Inc. Дата публикации: 2010-09-08.

Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structures

Номер патента: US9425052B2. Автор: Jan Hoentschel,Thilo Scheiper,Steven Langdon. Владелец: Globalfoundries Inc. Дата публикации: 2016-08-23.

Recessed gate electrodes having covered layer interfaces and methods of forming the same

Номер патента: US7582931B2. Автор: Chang-Won Lee,Byung-Hak Lee,Hee-sook Park,Woong-Hee Sohn,Sun-pil Youn,Jong-ryeol Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-01.

Semiconductor device with a high-k gate dielectric and a metal gate electrode

Номер патента: US20060017098A1. Автор: Mark Doczy,Justin Brask,Suman Datta,Robert Chau,Jack Kavalieros,Matthew Metz. Владелец: Intel Corp. Дата публикации: 2006-01-26.

Integration method of a semiconductor device having a recessed gate electrode

Номер патента: US6939765B2. Автор: Ji-Young Kim,Hyoung-Sub Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-09-06.

A semiconductor device with a high-k gate dielectric and a metal gate electrode

Номер патента: EP1790006A1. Автор: Mark Doczy,Justin Brask,Suman Datta,Robert Chau,Jack Kavalieros,Matthew Metz. Владелец: Intel Corp. Дата публикации: 2007-05-30.

High-K gate electrode structure formed after transistor fabrication by using a spacer

Номер патента: US8470661B2. Автор: Kai Frohberg,Katrin Reiche,Uwe Griebenow,Heike Berthold. Владелец: Advanced Micro Devices Inc. Дата публикации: 2013-06-25.

Reducing gate dielectric material to form a metal gate electrode extension

Номер патента: US20050245036A1. Автор: Mark Doczy,Justin Brask,Suman Datta,Robert Chau,Jack Kavalieros,Matthew Metz. Владелец: Intel Corp. Дата публикации: 2005-11-03.

Method to optimize work function in complementary metal oxide semiconductor (cmos) structures

Номер патента: US20110269276A1. Автор: Ramachandran Muralidhar,Dechao Guo,Unoh Kwon,Siddarth A. Krishnan. Владелец: International Business Machines Corp. Дата публикации: 2011-11-03.

Semiconductor device having doped work function metal layer

Номер патента: US11791338B2. Автор: Chih-Hsiung Huang,Chee-Wee Liu,Chung-En TSAI,Kun-Wa Kuok,Yi-Hsiu Hsiao. Владелец: National Taiwan University NTU. Дата публикации: 2023-10-17.

Selective growth of a work-function metal in a replacement metal gate of a semiconductor device

Номер патента: US20150108577A1. Автор: Hoon Kim,Xunyuan Zhang,Xiuyu Cai. Владелец: Globalfoundries Inc. Дата публикации: 2015-04-23.

Semiconductor device having doped work function metal layer

Номер патента: US20220149041A1. Автор: Chih-Hsiung Huang,Chee-Wee Liu,Chung-En TSAI,Kun-Wa Kuok,Yi-Hsiu Hsiao. Владелец: National Taiwan University NTU. Дата публикации: 2022-05-12.

Semiconductor device having doped work function metal layer

Номер патента: US20230369331A1. Автор: Chih-Hsiung Huang,Chee-Wee Liu,Chung-En TSAI,Kun-Wa Kuok,Yi-Hsiu Hsiao. Владелец: National Taiwan University NTU. Дата публикации: 2023-11-16.

Method of Manufacturing Metal Oxide Semiconductor Field-Effect Transistor Having Dual Work Function Gate

Номер патента: KR100981114B1. Автор: 김영석,최문호,나기열. Владелец: 충북대학교 산학협력단. Дата публикации: 2010-09-08.

Process for providing dual work function doping

Номер патента: TW464956B. Автор: William Robert Tonti,Jack A Mandelman,Jeffrey P Gambino,Gary Bela Bronner,Carl J Radens. Владелец: Ibm. Дата публикации: 2001-11-21.

HIGH-K METAL GATE DEVICES WITH A DUAL WORK FUNCTION AND METHODS FOR MAKING THE SAME

Номер патента: US20150011059A1. Автор: Yu Chen-Hua,YAO Liang-Gi,LIN CHENG-TUNG. Владелец: . Дата публикации: 2015-01-08.

MANUFACTURING METHOD FOR DUAL WORK-FUNCTION METAL GATES

Номер патента: US20180211886A1. Автор: Zhang Qingchun. Владелец: . Дата публикации: 2018-07-26.

VERTICAL TRANSISTOR HAVING DUAL WORK FUNCTION MATERIALS AND METHOD FOR FABRICATING THEREOF

Номер патента: US20180294351A1. Автор: SHEN Zhaoxu,BEI Duohui. Владелец: . Дата публикации: 2018-10-11.

Method for Manufacturing A Dual Work Function Semiconductor Device and the Semiconductor Device Made Thereof

Номер патента: US20160365289A1. Автор: OKUNO Yasutoshi,KUBICEK Stefan,Ragnarsson Lars-Ake,Schram Tom,SENGOKU NAOHISA,Tseng Joshua,Hoffmann Thomas Y.. Владелец: . Дата публикации: 2016-12-15.

Fabrication of dual work-function metal gate structure for complementary field effect transistors

Номер патента: US6864163B1. Автор: James Pan,Allen S. Yu. Владелец: Advanced Micro Devices Inc. Дата публикации: 2005-03-08.

Manufacturing method for dual work-function metal gates

Номер патента: US20180211886A1. Автор: Qingchun Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-07-26.

DUAL WORK FUNCTION INTEGRATION FOR STACKED FINFET

Номер патента: US20160336421A1. Автор: Cheng Kangguo,Reznicek Alexander,Khakifirooz Ali,Hashemi Pouya. Владелец: . Дата публикации: 2016-11-17.

Electroless Metal Deposition For Dual Work Function

Номер патента: US20090280631A1. Автор: Jeffrey P. Gambino,Michael P. Chudzik,Renee T. Mo. Владелец: International Business Machines Corp. Дата публикации: 2009-11-12.

Cmos semiconductor devices having dual work function metal gate stacks

Номер патента: US20070178634A1. Автор: Jong Ho Lee,Jung Min Park,Ju Youn Kim,Hyung Suk Jung,Sung Kee Han. Владелец: Nihon Propolis Co Ltd. Дата публикации: 2007-08-02.

Manufacturing method for dual work-function metal gates

Номер патента: US10403553B2. Автор: Qingchun Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-09-03.

MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS

Номер патента: US20200083113A1. Автор: Ando Takashi,Zhang Jingyun,Lee Choonghyun,Hashemi Pouya. Владелец: . Дата публикации: 2020-03-12.

MULTIVALENT OXIDE CAP FOR MULTIPLE WORK FUNCTION GATE STACKS ON HIGH MOBILITY CHANNEL MATERIALS

Номер патента: US20190341314A1. Автор: Ando Takashi,Zhang Jingyun,Lee Choonghyun,Hashemi Pouya. Владелец: . Дата публикации: 2019-11-07.

A method to form a transistor with multiple threshold voltages using a combination of different work function gate materials

Номер патента: EP1227521A2. Автор: YANG Pan,Yelehanka Ramachandramurthy Pradeep,Lap Chan,Jia Zhen Zheng,Ying Keung Leung,James Yong Meng Lee,Elgin Quek,Ravi Sundaresan. Владелец: Chartered Semiconductor Manufacturing Inc. Дата публикации: 2002-07-31.

Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials

Номер патента: US11018062B2. Автор: Takashi Ando,Pouya Hashemi,ChoongHyun Lee,Jingyun Zhang. Владелец: International Business Machines Corp. Дата публикации: 2021-05-25.

Method for making multiple threshold voltage fet using multiple work-function gate materials

Номер патента: US20020177279A1. Автор: Jeffrey Johnson,Arne Ballantine,Ramachandra Divakaruni,James Adkisson,Erin Jones,Hon-Sum Wong. Владелец: International Business Machines Corp. Дата публикации: 2002-11-28.

Mask free protection of work function material portions in wide replacement gate electrodes

Номер патента: US20130307086A1. Автор: Shom Ponoth,Chih-Chao Yang,David V. Horak,Charles W. Koburger, III,Marc A. Bergendahl. Владелец: International Business Machines Corp. Дата публикации: 2013-11-21.

Replacement gate electrode with planar work function material layers

Номер патента: US20140042561A1. Автор: Keith Kwong Hon Wong,Dechao Guo,Shu-Jen Han,Jun Yuan. Владелец: International Business Machines Corp. Дата публикации: 2014-02-13.

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRODE AND METHOD OF MAKING

Номер патента: US20170178973A1. Автор: Lee Da-Yuan,Lee Hsien-Ming,Jang Syun-Ming,Liu Kuan-Ting,Chang Weng,Lo Wei-Jen,Chung Hung-Chin. Владелец: . Дата публикации: 2017-06-22.

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRODE AND METHOD OF MAKING

Номер патента: US20200335404A1. Автор: Lee Da-Yuan,Lee Hsien-Ming,Jang Syun-Ming,Liu Kuan-Ting,Chang Weng,Lo Wei-Jen,Chung Hung-Chin. Владелец: . Дата публикации: 2020-10-22.

Work function tuning for mosfet gate electrodes

Номер патента: US20030151074A1. Автор: Brian Doyle,Gang Bai,Chunlin Liang,Jun-Fei Zheng. Владелец: Jun-Fei Zheng. Дата публикации: 2003-08-14.

Work function tuning for MOSFET gate electrodes

Номер патента: US6373111B1. Автор: Brian Doyle,Gang Bai,Chunlin Liang,Jun-Fei Zheng. Владелец: Intel Corp. Дата публикации: 2002-04-16.

Semiconductor structure including gate electrode having laterally variable work function

Номер патента: US20090309148A1. Автор: Amlan Majumdar,Wilfried Haensch,Steven Koester. Владелец: International Business Machines Corp. Дата публикации: 2009-12-17.

Replacement gate electrode with planar work function material layers

Номер патента: GB201402956D0. Автор: . Владелец: International Business Machines Corp. Дата публикации: 2014-04-09.

Replacement gate electrode with planar work function material layers

Номер патента: GB2508745B. Автор: Keith Kwong Hon Wong,Dechao Guo,Shu-Jen Han,Jun Yuan. Владелец: International Business Machines Corp. Дата публикации: 2015-10-07.

Method for forming a gate electrode of a semiconductor device, gate electrode structure for a semiconductor device and according semiconductor device structure

Номер патента: US20140264626A1. Автор: Ran Yan,Jan Hoentschel,Martin Trentzsch,Alban Zaka,Nicolas Sassiat,Carsten Grass. Владелец: Globalfoundries Inc. Дата публикации: 2014-09-18.

MOS device, having a metal-barrier metal-silicon gate structure, is produced by forming and processing a polysilicon gate electrode before forming a metal gate electrode

Номер патента: DE19951540A1. Автор: Sang-Don Lee,Ki-Jae Huh. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2000-10-12.

Method for forming a gate electrode of a semiconductor device, gate electrode structure for a semiconductor device and according semiconductor device structure

Номер патента: SG2014012116A. Автор: Ran Yan,Jan Hoentschel,Martin Trentzsch,Alban Zaka,Nicolas Sassiat,Carsten Grass. Владелец: Globalfoundries Inc. Дата публикации: 2014-10-30.

Formation of work-function layers for gate electrode using a gas cluster ion beam

Номер патента: US09748392B1. Автор: Hui Zang,Yanzhen Wang,Jidong Huang. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-29.

FORMATION OF WORK-FUNCTION LAYERS FOR GATE ELECTRODE USING A GAS CLUSTER ION BEAM

Номер патента: US20170250284A1. Автор: Zang Hui,WANG Yanzhen,Huang Jidong. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2017-08-31.

MOS transistor including multi-work function metal nitride gate electrode, COMS integrated circuit device including same, and related methods of manufacture

Номер патента: US20060244079A1. Автор: Shigenobu Maeda,Min-Joo Kim,XiaoQuan Wang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-11-02.

MOS transistors having a multi-work function metal nitride gate electrode, CMOS integrated circuit devices employing the same, and methods of fabricating the same

Номер патента: KR100724563B1. Автор: 김민주,시게노부 마에다,왕싸오췐. Владелец: 삼성전자주식회사. Дата публикации: 2007-06-04.

Method for adjusting work function of silicide gate electrode

Номер патента: JP2008226862A. Автор: Dim-Lee Kwong,Hongyu Yu,Serge Biesemans,Jorge Adrian Kittl,ユ・ホンユ,Chen Jingde,チェン・ジンデ,Mingfu Li,リ・ミンフ,ディム−リー・クウォン,セルジュ・ビーセマン,ジョルジュ・アドリアン・キットル. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2008-09-25.

Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the same

Номер патента: US09634109B2. Автор: Dong-Soo Kim,Eun-Jeong Kim,Tae-Kyung Oh,Jin-Yul Lee. Владелец: SK hynix Inc. Дата публикации: 2017-04-25.

Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the same

Номер патента: US09508847B2. Автор: Dong-Soo Kim,Eun-Jeong Kim,Tae-Kyung Oh,Jin-Yul Lee. Владелец: SK hynix Inc. Дата публикации: 2016-11-29.

Method for fabricating semiconductor device having dual work function gate structure

Номер патента: US9577052B2. Автор: Tae-Kyung Oh. Владелец: SK hynix Inc. Дата публикации: 2017-02-21.

Dual work function buried gate type transistor and method for fabricating the same

Номер патента: US09472646B2. Автор: Tae-Kyung Oh. Владелец: SK hynix Inc. Дата публикации: 2016-10-18.

Dual work function buried gate-type transistor, method for forming the same, and electronic device including the same

Номер патента: US09431496B2. Автор: Dong-Kyun Kang. Владелец: SK hynix Inc. Дата публикации: 2016-08-30.

Vertically stacked nFET and pFET with dual work function

Номер патента: US10707304B2. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,ChoongHyun Lee,Jingyun Zhang. Владелец: International Business Machines Corp. Дата публикации: 2020-07-07.

Transistor having dual work function buried gate electrode and method for fabricating the same

Номер патента: US09818843B2. Автор: Tae-Kyung Oh,Su-ho Kim,Jin-Yul Lee. Владелец: SK hynix Inc. Дата публикации: 2017-11-14.

Transistor having dual work function buried gate electrode and method for fabricating the same

Номер патента: US09530849B2. Автор: Tae-Kyung Oh,Su-ho Kim,Jin-Yul Lee. Владелец: SK hynix Inc. Дата публикации: 2016-12-27.

Multigate dual work function device and method for manufacturing same

Номер патента: US20150263167A1. Автор: Toshitaka Miyata. Владелец: Toshiba Corp. Дата публикации: 2015-09-17.

Vertically stacked nFET and pFET with dual work function

Номер патента: US10748994B2. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,ChoongHyun Lee,Jingyun Zhang. Владелец: International Business Machines Corp. Дата публикации: 2020-08-18.

Finfet with dual work function metal

Номер патента: US20210296463A1. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2021-09-23.

Transistor having dual work function buried gate electrode and method for fabricating the same

Номер патента: US20170069735A1. Автор: Tae-Kyung Oh,Su-ho Kim,Jin-Yul Lee. Владелец: SK hynix Inc. Дата публикации: 2017-03-09.

Memory transistor with multiple charge storing layers and a high work function gate electrode

Номер патента: US20150041880A1. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Cypress Semiconductor Corp. Дата публикации: 2015-02-12.

Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode

Номер патента: US9502543B1. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Cypress Semiconductor Corp. Дата публикации: 2016-11-22.

Field effect transistor having an asymmetric gate electrode

Номер патента: US20120104513A1. Автор: Huilong Zhu,Qingqing Liang. Владелец: International Business Machines Corp. Дата публикации: 2012-05-03.

Stacked fets with non-shared work function metals

Номер патента: GB2627627A. Автор: Krishnan Rishikesh,Guo Dechao,Wang Junli,Xie Ruilong,Pranatharthiharan Balasubramanian,Bao Ruqiang,Frougier Julien. Владелец: International Business Machines Corp. Дата публикации: 2024-08-28.

Transistor gate electrodes with voids

Номер патента: US12087839B2. Автор: Shahaji B. More,Chandrashekhar Prakash SAVANT. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer

Номер патента: US09590065B2. Автор: Weng Chang,Syun-Ming Jang,Wei-Jen Lo,Hsien-Ming Lee,Da-Yuan Lee,Kuan-Ting Liu,Hung-Chin Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-07.

Work function metal fill for replacement gate fin field effect transistor process

Номер патента: US20160300721A1. Автор: Hong He,Yongan Xu,Junli Wang,Yunpeng Yin. Владелец: International Business Machines Corp. Дата публикации: 2016-10-13.

Work function metal fill for replacement gate fin field effect transistor process

Номер патента: US10147803B2. Автор: Hong He,Yongan Xu,Junli Wang,Yunpeng Yin. Владелец: International Business Machines Corp. Дата публикации: 2018-12-04.

Work function metal fill for replacement gate fin field effect transistor process

Номер патента: US20160329415A1. Автор: Hong He,Yongan Xu,Junli Wang,Yunpeng Yin. Владелец: International Business Machines Corp. Дата публикации: 2016-11-10.

Work function metal fill for replacement gate fin field effect transistor process

Номер патента: US10164060B2. Автор: Hong He,Yongan Xu,Junli Wang,Yunpeng Yin. Владелец: International Business Machines Corp. Дата публикации: 2018-12-25.

Differential work function between gate stack metals to reduce parasitic capacitance

Номер патента: US20180315827A1. Автор: Gilbert Dewey,Jack T. Kavalieros,Anand S. Murthy,Chandra S. Mohapatra,Willy Rachmady,Matthew V. Metz,Nadia M. Rahhal-Orabi,Sean T. MA. Владелец: Intel Corp. Дата публикации: 2018-11-01.

Mosfet with work function adjusted metal backgate

Номер патента: US20150228489A1. Автор: Kangguo Cheng,Bruce B. Doris,Ali Khakifirooz,Pranita Kerber. Владелец: GlobalFoundries US 2 LLC. Дата публикации: 2015-08-13.

Work Function Layers For Transistor Gate Electrodes

Номер патента: US20240363711A1. Автор: Huang-Lin Chao,Chung-Liang Cheng,Ziwei Fang,Chun-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Work function layers for transistor gate electrodes

Номер патента: US12132091B2. Автор: Huang-Lin Chao,Chung-Liang Cheng,Ziwei Fang,Chun-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Work function design to increase density of nanosheet devices

Номер патента: US12148750B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-19.

MOSFET with work function adjusted metal backgate

Номер патента: US09484359B2. Автор: Kangguo Cheng,Ali Khakifirooz,Pranita Kerber,Bruce B Doris. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-01.

Stacked fets with non-shared work function metals

Номер патента: US20230178553A1. Автор: Dechao Guo,Ruilong Xie,Junli Wang,Julien Frougier,Rishikesh Krishnan,Ruqiang Bao,Balasubramanian S. Pranatharthiharan. Владелец: International Business Machines Corp. Дата публикации: 2023-06-08.

Stacked fets with non-shared work function metals

Номер патента: WO2023105333A1. Автор: BALASUBRAMANIAN Pranatharthiharan,Dechao Guo,Ruilong Xie,Junli Wang,Julien Frougier,Rishikesh Krishnan,Ruqiang Bao. Владелец: Ibm Israel Science And Technology Ltd.. Дата публикации: 2023-06-15.

Semiconductor device with profiled work-function metal gate electrode and method of making

Номер патента: US20230369132A1. Автор: Weng Chang,Syun-Ming Jang,Wei-Jen Lo,Hsien-Ming Lee,Da-Yuan Lee,Kuan-Ting Liu,Hung-Chin Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device with profiled work-function metal gate electrode and method of making

Номер патента: US11804409B2. Автор: Weng Chang,Syun-Ming Jang,Wei-Jen Lo,Hsien-Ming Lee,Da-Yuan Lee,Kuan-Ting Liu,Hung-Chin Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-31.

Work function design to increase density of nanosheet devices

Номер патента: US11862633B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Field effect transistor having an asymmetric gate electrode

Номер патента: US20130178056A1. Автор: Huilong Zhu,Qingqing Liang. Владелец: International Business Machines Corp. Дата публикации: 2013-07-11.

Work function design to increase density of nanosheet devices

Номер патента: US20220173096A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-02.

Gate electrode having a work-function layer including materials with different average grain sizes

Номер патента: US12113120B2. Автор: Pin Chia Su,Ling-Sung Wang,Ru-Shang Hsiao,Ching-Hwanq Su,Ying Hsin Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride

Номер патента: US09691871B1. Автор: Pierre Caubet,Florian Domengie,Onintza Ros Bengoechea,Aurelie Bajolet,Carlos Augusto Suarez Segovia. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2017-06-27.

Method of adjusting metal gate work function of NMOS device

Номер патента: US8298927B2. Автор: Qiuxia Xu,Gaobo Xu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2012-10-30.

Semiconductor device including work function layer and method for forming the same

Номер патента: US20240079229A1. Автор: Chung-Liang Cheng,Chia Chan Fan,Chin-Chia Yeh,Chieh Chiang,Cheng Yu Pai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-07.

Transition metal alloys for use as a gate electrode and devices incorporating these alloys

Номер патента: EP1654767A1. Автор: Kari Harkonen,Mark Doczy,Teemu Lang,Nathan Baxter,Robert Chau. Владелец: Intel Corp. Дата публикации: 2006-05-10.

Transition metal alloys for use as a gate electrode and devices incorporating these alloys

Номер патента: EP1654767B1. Автор: Kari Harkonen,Mark Doczy,Teemu Lang,Nathan Baxter,Robert Chau. Владелец: Intel Corp. Дата публикации: 2010-09-29.

Conformal replacement gate electrode for short channel devices

Номер патента: GB2582080A. Автор: Ando Takashi,Narayanan Vijay,Bao Ruqiang,Rozen John,Ogawa Yohei,Hatanaka Masanobu. Владелец: Ulvac Inc. Дата публикации: 2020-09-09.

Conformal replacement gate electrode for short channel devices

Номер патента: US20200066859A1. Автор: Yohei Ogawa,Takashi Ando,Vijay Narayanan,Masanobu Hatanaka,John Rozen,Ruqiang Bao. Владелец: Ulvac Inc. Дата публикации: 2020-02-27.

Work function design to increase density of nanosheet devices

Номер патента: US20240096880A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-21.

Multi voltage threshold transistors through process and design-induced multiple work functions

Номер патента: US20190304840A1. Автор: Walid M. Hafez,Chia-Hong Jan,Joodong Park,Neville L. DIAS,Rahul RAMASWAMY,Hsu-Yu Chang,Chen-Guan LEE,Everett S. CASSIDY-COMFORT. Владелец: Intel Corp. Дата публикации: 2019-10-03.

Mosfet with work function adjusted metal backgate

Номер патента: US20130214356A1. Автор: Kangguo Cheng,Ali Khakifirooz,Bruce Doris,Pranita Kulkarni. Владелец: International Business Machines Corp. Дата публикации: 2013-08-22.

Process for forming a layer of equiaxed titanium nitride and a mosfet device having a metal gate electrode including a layer of equiaxed titanium nitride

Номер патента: US20170256625A1. Автор: Pierre Caubet,Florian Domengie,Onintza Ros Bengoechea,Aurelie Bajolet,Carlos Augusto Suarez Segovia. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2017-09-07.

Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride

Номер патента: US10211059B2. Автор: Pierre Caubet,Florian Domengie,Onintza Ros Bengoechea,Aurelie Bajolet,Carlos Augusto Suarez Segovia. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2019-02-19.

Semiconductor device including work function adjusting metal gate structure

Номер патента: US20220165861A1. Автор: Jong Ho Park,Byoung Hoon Lee,Wan Don KIM,Sang Jin HYUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-26.

Gate electrode and method for manufacturing the same, and method for manufacturing array substrate

Номер патента: US20210242033A1. Автор: Tingting Zhou,Bin Zhang,Yucheng CHAN,Xuefei Sun,Chienhung Liu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-08-05.

Metal gate electrode using silicidation and method of formation thereof

Номер патента: EP1502305A1. Автор: Zoran Krivokapic,Witold P. Maszara. Владелец: Advanced Micro Devices Inc. Дата публикации: 2005-02-02.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Номер патента: US20210091093A1. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-25.

Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device

Номер патента: US09559183B2. Автор: Hiroshi Kawaguchi,Takashi Inoue,Takayuki Nagai,Toshiyuki Takewaki,Yasuhiro Okamoto,Tatsuo Nakayama,Hironobu Miyamoto,Yoshinao Miura,Nobuhiro Nagura. Владелец: Renesas Electronics Corp. Дата публикации: 2017-01-31.

Semiconductor devices including a buried gate electrode

Номер патента: US11765885B2. Автор: Sangwoon Lee,Hyewon Kim,Donghyun IM,Sungmi YOON,Juhyung We,TaiUk Rim,Kyosuk CHAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-19.

Semiconductor device having buried gate electrode structures

Номер патента: US20150145029A1. Автор: Marko Lemke,Rolf Weis,Stefan Tegen. Владелец: Infineon Technologies Dresden GmbH and Co KG. Дата публикации: 2015-05-28.

Method for evaluating impurity distribution under gate electrode without damaging silicon substrate

Номер патента: US7691649B2. Автор: Hidekazu Sato,Kazuo Hashimi. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2010-04-06.

Method of enlarging contact area of a gate electrode, semiconductor device having a surface-enlarged gate electrode, and method of manufacturing the same

Номер патента: US20040169223A1. Автор: Chan-Hyung Cho,Sung-Gyu Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-09-02.

Method of a fabricating a semiconductor having a reduced leakage current flow between the accumulation electrode and the gate electrode

Номер патента: US20020055245A1. Автор: Daisuke Matsunaga. Владелец: Individual. Дата публикации: 2002-05-09.

Method of making a semiconductor device having a gate electrode with an hourglass shape

Номер патента: US7091094B2. Автор: Jeong-Hwan Son,Hyeong-Mo Yang. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-08-15.

Three-dimensional memory device with charge-trapping-free gate dielectric for top select gate electrode and method of making thereof

Номер патента: US09679907B1. Автор: Ryosuke Kaneko. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-06-13.

Dishing prevention structure embedded in a gate electrode

Номер патента: US12142488B2. Автор: Ta-Wei Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-12.

Via-first process for connecting a contact and a gate electrode

Номер патента: US20210265202A1. Автор: Mei-Yun Wang,Chao-Hsun Wang,Kuo-Yi Chao,Wang-Jung HSUEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-26.

Semiconductor device with shared contact hole for gate electrode and drain region

Номер патента: EP2075831A3. Автор: Masahiko Renesas Technology Corp. Takeuchi. Владелец: Renesas Technology Corp. Дата публикации: 2010-09-01.

Gate electrode layout

Номер патента: US20200258992A1. Автор: Hirokazu Matsumoto,Makoto Sato,Ryota Suzuki. Владелец: Micron Technology Inc. Дата публикации: 2020-08-13.

Gate electrode layout

Номер патента: WO2020167788A1. Автор: Hirokazu Matsumoto,Makoto Sato,Ryota Suzuki. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-08-20.

Process of forming electron device having gate electrode

Номер патента: US20190088483A1. Автор: Hiroyuki Ichikawa,Tomohiro Yoshida. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2019-03-21.

Multi-step process for patterning a metal gate electrode

Номер патента: US20060115972A1. Автор: Antonio Rotondaro,Trace Hurd,Deborah Riley. Владелец: Texas Instruments Inc. Дата публикации: 2006-06-01.

Lateral diffusion field effect transistor with drain region self-aligned to gate electrode

Номер патента: US20120126319A1. Автор: Jeffrey P. Gambino,Xuefeng Liu,Steven H. Voldman,Natalie B. Feilchenfeld,Michael J. Zierak,Benjamin T. Voegeli. Владелец: International Business Machines Corp. Дата публикации: 2012-05-24.

Semiconductor device with high-temperature-stable gate electrode for sub-micron applications and fabrication thereof

Номер патента: US20010013600A1. Автор: James Cunningham. Владелец: Philips Semiconductors Inc. Дата публикации: 2001-08-16.

Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate

Номер патента: US20040092090A1. Автор: Eun-Jung Yun,Kong-Soo Lee,Yong-woo Hyung,Jae-jong Han,Seung-Mok Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-05-13.

Method for improving continuity of work function thin film

Номер патента: US20230290634A1. Автор: Yanxia Hao. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2023-09-14.

Composite work function layer formation using same work function material

Номер патента: US12080777B2. Автор: Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Composite work function layer formation using same work function material

Номер патента: US20240363718A1. Автор: Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Methods for pre-deposition treatment of a work-function metal layer

Номер патента: US09978601B2. Автор: Weng Chang,Ming-Hsing Tsai,Hsin-Yi Lee,Da-Yuan Lee,Cheng-Yen Tsai,Chung-Chiang WU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-22.

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Номер патента: US09972640B1. Автор: Jin Liu,James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-15.

Methods of fabricating transistors with a protection layer to improve the insulation between a gate electrode and a junction region

Номер патента: US09786766B2. Автор: Jang Uk Lee. Владелец: SK hynix Inc. Дата публикации: 2017-10-10.

Gate electrode material residual removal process

Номер патента: US09640385B2. Автор: Chentsau Ying,Srinivas D. Nemani,Bhargav Citla. Владелец: Applied Materials Inc. Дата публикации: 2017-05-02.

Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric

Номер патента: US09484460B2. Автор: Jean-Pierre Colinge,Carlos H. Diaz,Tsung-Hsing Yu,Chia-Wen Liu,Yeh Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-01.

Three dimensional NAND device having nonlinear control gate electrodes and method of making thereof

Номер патента: US09455267B2. Автор: Yanli Zhang,Johann Alsmeier. Владелец: SanDisk Technologies LLC. Дата публикации: 2016-09-27.

Method of producing a t-shaped gate electrode

Номер патента: US5139968A. Автор: Takuji Sonoda,Iwao Hayase. Владелец: Mitsubishi Electric Corp. Дата публикации: 1992-08-18.

Work-Function Metal in Transistors and Method Forming Same

Номер патента: US20230282729A1. Автор: Weng Chang,Huang-Lin Chao,Cheng-Lung Hung,Ming-Hsing Tsai,Chih-Wei Chang,Hsin-Yi Lee,Chi On Chui,Yan-Ming Tsai,Harry CHIEN,Chun-Da Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Method of manufacturing a semiconductor device including capping layer, barrier layer and work function layer

Номер патента: US12046657B2. Автор: Hsueh Wen Tsau. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Techniques for forming multiple work function nanosheet device

Номер патента: US10381272B1. Автор: Min Gyu Sung. Владелец: Varian Semiconductor Equipment Associates Inc. Дата публикации: 2019-08-13.

Via-first process for connecting a contact and a gate electrode

Номер патента: US20240371687A1. Автор: Mei-Yun Wang,Chao-Hsun Wang,Kuo-Yi Chao,Wang-Jung HSUEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Via-first process for connecting a contact and a gate electrode

Номер патента: US12125743B2. Автор: Mei-Yun Wang,Chao-Hsun Wang,Kuo-Yi Chao,Wang-Jung HSUEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget

Номер патента: US09721796B2. Автор: James Joseph Chambers,Hiroaki Niimi. Владелец: Texas Instruments Inc. Дата публикации: 2017-08-01.

Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer

Номер патента: US09666706B2. Автор: Young-Jin Cho,Sang-Moon Lee,Ki-ha Hong,Kyoung-Yeon Kim,Eui-chul HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-30.

Selectively forming a protective conductive cap on a metal gate electrode

Номер патента: US09379209B2. Автор: Min-Hwa Chi,Xiuyu Cai,Xusheng Wu,Jiajun Mao. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-28.

Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor

Номер патента: US6140672A. Автор: Koji Arita,Carlos A. Paz de Araujo. Владелец: Symetrix Corp. Дата публикации: 2000-10-31.

Method of forming a device including a floating gate electrode and a layer of ferroelectric material

Номер патента: US9865608B2. Автор: Stefan Mueller,Johannes Mueller,Stefan Flachowsky. Владелец: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV. Дата публикации: 2018-01-09.

Damage free gate dielectric process during gate electrode plasma etching

Номер патента: US5843835A. Автор: Ming-Hsi Liu. Владелец: Winbond Electronics Corp. Дата публикации: 1998-12-01.

Gate electrode stack with diffusion barrier

Номер патента: US5962904A. Автор: Yongjun Hu. Владелец: Micron Technology Inc. Дата публикации: 1999-10-05.

Semiconductor device having a gate electrode of polycrystal layer and a method of manufacturing thereof

Номер патента: US5381032A. Автор: Yasuna Nakamura,Katsuhiko Tamura,Kenji Kusakabe,Tohru Koyama,Yoshiko Kokawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-01-10.

Method of forming a high-frequency transistor T gate electrode

Номер патента: US5776820A. Автор: Yamato Ishikawa,Tomoyuki Kamiyama. Владелец: Honda Motor Co Ltd. Дата публикации: 1998-07-07.

Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same

Номер патента: US20040041213A1. Автор: Atsushi Azuma,Kazuya Ohuchi. Владелец: Toshiba Corp. Дата публикации: 2004-03-04.

Electronic Device Including a Doped Gate Electrode and a Process of Forming the Same

Номер патента: US20220189780A1. Автор: Abhishek Banerjee,Peter Coppens,Peter Moens,Petr Kostelnik,Tomas Novak. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2022-06-16.

Process of forming an electronic device including a doped gate electrode

Номер патента: US11942326B2. Автор: Abhishek Banerjee,Peter Coppens,Peter Moens,Petr Kostelnik,Tomas Novak. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2024-03-26.

Method of manufacturing compound semiconductor device with gate electrode forming before source electrode and drain electrode

Номер патента: US8569124B2. Автор: Toshiya Sato,Tsutomu Hosoda,Yoshitaka Watanabe,Kenji Nukui,Shinichi Akiyama,Yoichi Fujisawa,Tetsuya Itou,Yuuichi Satou,Mutsumi Katou. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2013-10-29.

Metal Gate Electrode Formation Of Memory Devices

Номер патента: US20230395598A1. Автор: Yu-Ling Cheng,Hui-Chi CHEN,Wen-Hung Huang,Kuo-Feng Yu,Jian-Hao Chen,yu-xuan Wang,Chih-Wei Lee,Jo-Chun Hung,Hsin-Han Tsai,Tefu Yeh,Yin-Chuan Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-07.

Dishing prevention structure embedded in a gate electrode

Номер патента: US20230094853A1. Автор: Ta-Wei Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-30.

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Номер патента: US11792994B2. Автор: Kohji Kanamori,Jeehoon HAN,Seogoo KANG,Jongseon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-17.

Method of manufacturing semiconductor device with reduced junction leakage current and gate electrode resistance of transistor

Номер патента: US20060115936A1. Автор: Keizo Kawakita,Kensuke Okonogi,Kiyonori Oyu. Владелец: Elpida Memory Inc. Дата публикации: 2006-06-01.

Method for forming an oxynitride spacer for a metal gate electrode using a pecvd process with a silicon-starving atmosphere

Номер патента: WO2003046971A1. Автор: Minh Van Ngo,Arvind Halliyal. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2003-06-05.

Method for forming an oxynitride spacer for a metal gate electrode using a pecvd process with a silicon-starving atmosphere

Номер патента: EP1449243A1. Автор: Minh Van Ngo,Arvind Halliyal. Владелец: Advanced Micro Devices Inc. Дата публикации: 2004-08-25.

Semiconductor device including work function adjusting metal gate structure

Номер патента: US11967630B2. Автор: Jong Ho Park,Byoung Hoon Lee,Wan Don KIM,Sang Jin HYUN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-23.

Transistor comprising an air gap positioned adjacent a gate electrode

Номер патента: US20200066899A1. Автор: Haiting Wang,Hui Zang,Laertis Economikos,Jinping Liu,Shesh Mani Pandey. Владелец: Globalfoundries Inc. Дата публикации: 2020-02-27.

Method of Manufacturing a Semiconductor Device with a Metal-Filled Groove in a Polysilicon Gate Electrode

Номер патента: US20180026130A1. Автор: Ralf Siemieniec,Oliver Blank,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-01-25.

Gate electrode structure

Номер патента: US8008155B2. Автор: Yungi Kim,KangYoon Lee,Hyeoungwon Seo,Jaeman Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-30.

Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof

Номер патента: US20060138518A1. Автор: Akiyoshi Mutou,Hiroshi Ohji. Владелец: Sharp Corp. Дата публикации: 2006-06-29.

Manufacturing method for semiconductor device having a T-type gate electrode

Номер патента: US20060009032A1. Автор: So Suzuki. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2006-01-12.

Gate electrode structure

Номер патента: US20080017913A1. Автор: Yungi Kim,KangYoon Lee,Hyeoungwon Seo,Jaeman Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-01-24.

Method of forming a semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer

Номер патента: US11756995B2. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Method for adjusting the height of a gate electrode in a semiconductor device

Номер патента: US20090108336A1. Автор: Kai Frohberg,Katrin Reiche,Uwe Griebenow,Heike Berthold. Владелец: Individual. Дата публикации: 2009-04-30.

High-k and p-type work function metal first fabrication process having improved annealing process flows

Номер патента: US20170025285A1. Автор: Jin Cho,Hui Zang,Miaomiao Wang. Владелец: International Business Machines Corp. Дата публикации: 2017-01-26.

Work function metal gate device

Номер патента: US20240313074A1. Автор: Chih-Wen Huang,Shih-An Huang. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-19.

Vertical memory device having first contact plugs connected to plurality of staircase gate electrodes, respectively and second contact plugs extending through the staircase gate structure in the pad region

Номер патента: US12063781B2. Автор: Kohji Kanamori,Shin-Hwan Kang,Min-Yeong Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-13.

Work function metal gate device

Номер патента: US12021129B2. Автор: Chih-Wen Huang,Shih-An Huang. Владелец: United Microelectronics Corp. Дата публикации: 2024-06-25.

Gate electrodes with notches and methods for forming the same

Номер патента: US09905426B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Tzu-Hsuan Hsu,Feng-Chi Hung,Min-Feng KAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-27.

High-k and p-type work function metal first fabrication process having improved annealing process flows

Номер патента: US09876089B2. Автор: Jin Cho,Hui Zang,Miaomiao Wang. Владелец: International Business Machines Corp. Дата публикации: 2018-01-23.

Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

Номер патента: US09818847B2. Автор: Gilbert Dewey,Robert S. Chau,Ravi Pillarisetty,Han Wui Then,Marko Radosavljevic,Scott B. Clendenning. Владелец: Intel Corp. Дата публикации: 2017-11-14.

Method of making self-assembling floating gate electrodes for a three-dimensional memory device

Номер патента: US09806089B2. Автор: Yanli Zhang,Raghuveer S. Makala,Rahul Sharangpani,Somesh Peri. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-10-31.

Semiconductor device with metal-filled groove in polysilicon gate electrode

Номер патента: US09768290B2. Автор: Ralf Siemieniec,Oliver Blank,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-09-19.

Method of forming integrated circuit having plural transistors with work function metal gate structures

Номер патента: US09754841B2. Автор: Chia-Fu Hsu,Yu-Ru Yang,Chih-Wei Yang,En-Chiuan Liou,Jian-Cun KE,Yu-Feng Liu. Владелец: United Microelectronics Corp. Дата публикации: 2017-09-05.

High-k and p-type work function metal first fabrication process having improved annealing process flows

Номер патента: US09570318B1. Автор: Jin Cho,Hui Zang,Miaomiao Wang. Владелец: International Business Machines Corp. Дата публикации: 2017-02-14.

Method of fabricating a semiconductor device by doping impurity element into a semiconductor layer through a gate electrode

Номер патента: US7172928B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2007-02-06.

Cell of Semiconductor Device Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors

Номер патента: US20100019284A1. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2010-01-28.

Semiconductor device fabrication using a sacrificial plug for defining a region for a gate electrode

Номер патента: US6051487A. Автор: Mark I. Gardner,H. Jim Fulford,Mark C. Gilmer,Robert Paiz. Владелец: Advanced Micro Devices Inc. Дата публикации: 2000-04-18.

Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto

Номер патента: US8203189B2. Автор: Masato Koyama,Yoshinori Tsuchiya. Владелец: Toshiba Corp. Дата публикации: 2012-06-19.

Method for producing a gate electrode for an MOS structure

Номер патента: US5705414A. Автор: Bernhard Lustig. Владелец: SIEMENS AG. Дата публикации: 1998-01-06.

Integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure

Номер патента: US6057604A. Автор: Loi N. Nguyen. Владелец: STMicroelectronics lnc USA. Дата публикации: 2000-05-02.

Semiconductor device comprising gate electrode having arsenic and phosphorus

Номер патента: US7714364B2. Автор: Akira Hokazono. Владелец: Toshiba Corp. Дата публикации: 2010-05-11.

Method of forming gate electrode in semiconductor device

Номер патента: US20040259369A1. Автор: Cha Dong,Ho Son. Владелец: Individual. Дата публикации: 2004-12-23.

Process of fabricating a semiconductor device having cobalt niobate gate electrode structure

Номер патента: US5930632A. Автор: Mark I. Gardner,Mark C. Gilmer. Владелец: Advanced Micro Devices Inc. Дата публикации: 1999-07-27.

Nanosheet devices with different types of work function metals

Номер патента: US20190304848A1. Автор: Chen Zhang,Kangguo Cheng,Xin Miao,Wenyu Xu. Владелец: International Business Machines Corp. Дата публикации: 2019-10-03.

Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device

Номер патента: US11799007B2. Автор: Alexander Kalnitsky,Kong-Beng Thei,Chien-Chih Chou,Szu-Hsien Liu,Yi-huan Chen,Huan-Chih Yuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-24.

Thicker corner of a gate dielectric structure around a recessed gate electrode for an mv device

Номер патента: US20220367654A1. Автор: Alexander Kalnitsky,Kong-Beng Thei,Chien-Chih Chou,Szu-Hsien Liu,Yi-huan Chen,Huan-Chih Yuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-17.

Work-Function Layers in the Gates of pFETs

Номер патента: US20230282712A1. Автор: Weng Chang,Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen,Yen-Tien Tung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Method of manufacturing a power semiconductor device having source region and body contact region formed between trench-type gate electrodes

Номер патента: US11855184B2. Автор: Soo Chang Kang,Seong Jo HONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2023-12-26.

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Номер патента: US20180138189A1. Автор: Jin Liu,James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-17.

Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same

Номер патента: US20190267391A1. Автор: James Kai,Muneyuki IMAI. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-08-29.

Dishing prevention structure embedded in a gate electrode

Номер патента: US20220068660A1. Автор: Ta-Wei Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-03.

Image sensor comprising polysilicon gate electrode and nitride hard mask

Номер патента: US11837622B2. Автор: CHUN-WEI Chia,Chun-Hao Chou,Kuo-Cheng Lee,Shyh-Fann Ting,Kai-Chun Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-05.

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Номер патента: EP3494596A1. Автор: Jin Liu,James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-06-12.

Metal gate electrode stabilization by alloying

Номер патента: US20090179279A1. Автор: Hariklia Deligianni,Lubomyr T. Romankiw,Rajarao Jammy,Veeraraghavan S. Basker,Vamsi K. Paruchuri. Владелец: International Business Machines Corp. Дата публикации: 2009-07-16.

High band-gap devices with a doped high band-gap gate electrode extension

Номер патента: US20240055488A1. Автор: Chang Soo Suh,Dong Seup Lee. Владелец: Texas Instruments Inc. Дата публикации: 2024-02-15.

Semiconductor device having a stacked gate insulation film and a gate electrode and manufacturing method thereof

Номер патента: US6847079B2. Автор: Katsumi Nakamura. Владелец: Mitsubishi Electric Corp. Дата публикации: 2005-01-25.

High voltage semiconductor device including a doped gate electrode

Номер патента: US11908916B2. Автор: Yu Shin RYU,Soon Yeol PARK,Yoon Hyung KIM. Владелец: SK Hynix System IC Inc. Дата публикации: 2024-02-20.

Composite Work Function Layer Formation Using Same Work Function Material

Номер патента: US20220020861A1. Автор: Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-20.

Thicker corner of a gate dielectric structure around a recessed gate electrode for an mv device

Номер патента: US20230361188A1. Автор: Alexander Kalnitsky,Kong-Beng Thei,Chien-Chih Chou,Szu-Hsien Liu,Yi-huan Chen,Huan-Chih Yuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

Method for forming a gate electrode

Номер патента: US20120135594A1. Автор: ZHONGSHAN Hong. Владелец: Semiconductor Manufacturing International Beijing Corp. Дата публикации: 2012-05-31.

Method of making fully silicided gate electrode

Номер патента: WO2006051090A1. Автор: SunOo Kim,Veit Klee. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2006-05-18.

High band-gap devices with a doped high band-gap gate electrode extension

Номер патента: WO2024035857A1. Автор: Chang Soo Suh,Dong Seup Lee. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2024-02-15.

Gate electrodes with notches and methods for forming the same

Номер патента: US12009214B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Tzu-Hsuan Hsu,Feng-Chi Hung,Min-Feng KAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-11.

Tungsten gate electrode method and device

Номер патента: EP1258033A1. Автор: Timothy Z. Hossain,Amiya R. Ghatak-Roy,Jason B. Zanotti. Владелец: Advanced Micro Devices Inc. Дата публикации: 2002-11-20.

Semiconductor device having a stacked gate insulation film and a gate electrode and manufacturing method thereof

Номер патента: US20050093061A1. Автор: Katsumi Nakamura. Владелец: Renesas Technology Corp. Дата публикации: 2005-05-05.

Semiconductor device having a stacked gate insulation film and a gate electrode and manufacturing method thereof

Номер патента: US7180131B2. Автор: Katsumi Nakamura. Владелец: Mitsubishi Electric Corp. Дата публикации: 2007-02-20.

Via-first process for connecting a contact and a gate electrode

Номер патента: US20220093456A1. Автор: Mei-Yun Wang,Chao-Hsun Wang,Kuo-Yi Chao,Wang-Jung HSUEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-24.

Modifying work function of a metal film with a plasma process

Номер патента: US20180218911A1. Автор: WEI Liu,Johanes S. Swenberg,Houda Graoui,Steven C. H. Hung. Владелец: Applied Materials Inc. Дата публикации: 2018-08-02.

Method for forming a hard mask for gate electrode patterning and corresponding device

Номер патента: US20060081917A1. Автор: Chien-Hao Chen,Tze-Liang Lee,Shih-Chang Chen,Chao-Cheng Chen,Chia-Jen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2006-04-20.

Semiconductor device including a gate electrode of lower electrical resistance and method of manufacturing the same

Номер патента: US20080048274A1. Автор: Hyun-Young Kim,Jin-gi Hong,Jung-Hun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-02-28.

Methods of forming a transistor with an integrated metal silicide gate electrode

Номер патента: WO2005020282A3. Автор: Todd R Abbot. Владелец: Todd R Abbot. Дата публикации: 2006-02-09.

Methods of forming a transistor with an integrated metal silicide gate electrode

Номер патента: EP1656696B1. Автор: Todd R. Abbot. Владелец: Micron Technology Inc. Дата публикации: 2010-04-21.

Methods of forming a transistor with an integrated metal silicide gate electrode

Номер патента: WO2005020282A2. Автор: Todd R. Abbot. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2005-03-03.

Three-dimensional ferroelectric memory devices including a backside gate electrode and methods of making same

Номер патента: WO2020149937A1. Автор: Koji Sato. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-07-23.

Semiconductor device having electrode made of high work function material and method of manufacturing the same

Номер патента: US20150171179A1. Автор: Sadayoshi Horii,Arito Ogawa,Hideharu Itatani. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2015-06-18.

Semiconductor device with low concentration opposite type doping drain end gate electrode

Номер патента: WO2024226119A1. Автор: Henry Litzmann Edwards. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2024-10-31.

Gate electrode(s) and contact structure(s), and methods of fabrication thereof

Номер патента: US20140183745A1. Автор: Huang Liu,Jialin YU,Jilin XIA. Владелец: Globalfoundries Inc. Дата публикации: 2014-07-03.

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Номер патента: US09947790B2. Автор: Hitoshi Wakabayashi,Satoru Mayuzumi. Владелец: Sony Corp. Дата публикации: 2018-04-17.

Semiconductor device having electrode made of high work function material, method and apparatus for manufacturing the same

Номер патента: US09653301B2. Автор: Sadayoshi Horii,Arito Ogawa,Hideharu Itatani. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-05-16.

Dual metal gate electrode for reducing threshold voltage

Номер патента: US09577062B2. Автор: Hiroshi Sunamura,Hemanth Jagannathan. Владелец: Renesas Electronics Corp. Дата публикации: 2017-02-21.

Semiconductor device having electrode made of high work function material and method of manufacturing the same

Номер патента: US09472637B2. Автор: Sadayoshi Horii,Arito Ogawa,Hideharu Itatani. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-10-18.

Semiconductor chip including region having integrated circuit transistor gate electrodes formed by various conductive structures of specified shape and position and method for manufacturing the same

Номер патента: US09443947B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2016-09-13.

Integrated circuit device and associated layout including gate electrode level region of 965 NM radius with linear-shaped conductive segments on fixed pitch

Номер патента: US8089099B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2012-01-03.

Method of making a narrow gate electrode for a field effect transistor

Номер патента: US5538910A. Автор: Tomoki Oku. Владелец: Mitsubishi Electric Corp. Дата публикации: 1996-07-23.

Production method of T-shaped gate electrode in semiconductor device

Номер патента: US5304511A. Автор: Masayuki Sakai. Владелец: Mitsubishi Electric Corp. Дата публикации: 1994-04-19.

Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes

Номер патента: US4471522A. Автор: Chakrapani G. Jambotkar. Владелец: International Business Machines Corp. Дата публикации: 1984-09-18.

Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization

Номер патента: US20030071312A1. Автор: Yasuhisa Oana,Masakiyo Matsumura. Владелец: Advanced LCD Technologies Development Center Co Ltd. Дата публикации: 2003-04-17.

Three-dimensional semiconductor devices including gate electrodes

Номер патента: US10468433B2. Автор: Kwang Soo Kim,Jae Duk Lee,Young Jin JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-11-05.

Metal oxide semiconductor (MOS) transistor having a recessed gate electrode and methods of fabricating the same

Номер патента: US7655522B2. Автор: Tae-Young Chung,Yong-Sung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-02-02.

Semiconductor device having a low-resistance gate electrode

Номер патента: US20050020045A1. Автор: Tetsuya Taguwa. Владелец: Tetsuya Taguwa. Дата публикации: 2005-01-27.

Method for manufacturing a multi-layer gate electrode for a mos transistor

Номер патента: US5164333A. Автор: Udo Schwalke,Hellmut Joswig. Владелец: SIEMENS AG. Дата публикации: 1992-11-17.

Semiconductor device of MOS structure having p-type gate electrode

Номер патента: US5189504A. Автор: Satoshi Nakayama,Tetsushi Sakai. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 1993-02-23.

Method of making semiconductor devices having an implant damage protection film on the gate electrode sidewalls

Номер патента: US5145797A. Автор: Shoji Nakanishi. Владелец: Seiko Instruments Inc. Дата публикации: 1992-09-08.

A method of forming a tantalum-containing gate electrode structure

Номер патента: WO2005104197A1. Автор: Yumiko Kawano,Hideaki Yamasaki,Vijay Narayanan,Kazuhito Nakamura,Gert Leusink,Fenton R. McFeely,John J. Yurkas. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2005-11-03.

Method of manufacturing aluminum gate electrode

Номер патента: US6110768A. Автор: Ting-Chang Chang,Po-Sheng Shih,Du-Zen Peng. Владелец: United Microelectronics Corp. Дата публикации: 2000-08-29.

Method for fabricating a mosfet having polycide gate electrode

Номер патента: US20010051419A1. Автор: Se Aug Jang,Tae Kyun Kim. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 2001-12-13.

Semiconductor device having field plate structures and gate electrode structures between the field plate structures

Номер патента: US9691862B2. Автор: Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-06-27.

Methods of forming titanium-aluminum layers for gate electrodes and related semiconductor devices

Номер патента: US20160133470A1. Автор: David J. Williams,Jun-Han Kim,Clint E. BORDELON,Sergei DRIZLlKH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-05-12.

Method of manufacturing semiconductor device having buried gate electrodes

Номер патента: US20210183689A1. Автор: Ki-Bum Lee,Yun-Jung Kim,Byung-jae Kang,Se-min Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-06-17.

Dishing prevention structure embedded in a gate electrode

Номер патента: US20210043463A1. Автор: Ta-Wei Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-02-11.

Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget

Номер патента: US20170301774A1. Автор: James Joseph Chambers,Hiroaki Niimi. Владелец: Texas Instruments Inc. Дата публикации: 2017-10-19.

Semiconductor Device Having Field Plate Structures and Gate Electrode Structures Between the Field Plate Structures

Номер патента: US20160204210A1. Автор: Martin Poelzl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-07-14.

Semiconductor structure having air gap between gate electrode and distal end portion of active area and fabrication method thereof

Номер патента: US20190296020A1. Автор: Feng-Yi Chang,Fu-Che Lee. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-09-26.

Semiconductor structure having air gap between gate electrode and distal end portion of active area

Номер патента: US20190006368A1. Автор: Feng-Yi Chang,Fu-Che Lee. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-01-03.

Semiconductor device with a gate electrode positioned in a semiconductor substrate

Номер патента: US10319831B2. Автор: Toru Onishi,Tomoharu IKEDA,Shuhei Oki,Rahman MD. TASBIR. Владелец: Toyota Motor Corp. Дата публикации: 2019-06-11.

Non-planar iii-v field effect transistors with conformal metal gate electrode&nitrogen doping of gate dielectric interface

Номер патента: EP2901491A2. Автор: Gilbert Dewey,Robert S. Chau,Ravi Pillarisetty,Han Wui Then,Marko Radosavljevic,Scott B. Clendenning. Владелец: Intel Corp. Дата публикации: 2015-08-05.

Semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer

Номер патента: US20230369393A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Mao-Lin Huang,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Kuan-Lun Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Transistor Device and Method for Forming a Recess for a Trench Gate Electrode

Номер патента: US20200111896A1. Автор: Thomas Feil,Olaf Kuehn,Heimo Hofer,Ravi Keshav Joshi,Christoph Gruber,Juergen Steinbrenner,Jyotshna Bhandari. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2020-04-09.

Method of forming a field effect transistor having a gate structure with a first section having a first effective work function above a center portion of the channel region and with second sections having a second effective work function above opposing sidewalls of the channel region

Номер патента: US20140070330A1. Автор: Brent A. Anderson,Edward J. Nowak. Владелец: International Business Machines Corp. Дата публикации: 2014-03-13.

Semiconductor Device with Metal-Filled Groove in Polysilicon Gate Electrode

Номер патента: US20150295078A1. Автор: Ralf Siemieniec,Oliver Blank,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2015-10-15.

Method of manufacturing semiconductor device having buried gate electrodes

Номер патента: US20200243375A1. Автор: Ki-Bum Lee,Yun-Jung Kim,Byung-jae Kang,Se-min Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-30.

A semiconductor device having a silicided gate electrode and method of manufacture therefor

Номер патента: WO2005084342A2. Автор: Jiong-Ping Lu. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2005-09-15.

Stable work function for narrow-pitch devices

Номер патента: US20230299170A1. Автор: Takashi Ando,Terence B. Hook,Mohit Bajaj,Rajan K. Pandey,Rajesh Sathiyanarayanan. Владелец: Tessera LLC. Дата публикации: 2023-09-21.

Adjusting Work Function Through Adjusting Deposition Temperature

Номер патента: US20210233817A1. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-07-29.

Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus

Номер патента: US20150187907A1. Автор: Atsushi Yamada. Владелец: Transphorm Japan Inc. Дата публикации: 2015-07-02.

Semiconductor device manufacturing method with reduced gate electrode height loss and related devices

Номер патента: US10535750B2. Автор: Yang Liu,Yongmeng Lee,Shaofeng Yu,Jianhua Ju,Zhaoxu Shen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-01-14.

N-Work Function Metal with Crystal Structure

Номер патента: US20170301768A1. Автор: Chi-Cheng Hung,Kuan-Ting Liu,Jun-Nan Nian. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-19.

N-work function metal with crystal structure

Номер патента: US10269918B2. Автор: Chi-Cheng Hung,Kuan-Ting Liu,Jun-Nan Nian. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-04-23.

N-work Function Metal with Crystal Structure

Номер патента: US20190252512A1. Автор: Chi-Cheng Hung,Kuan-Ting Liu,Jun-Nan Nian. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-08-15.

Adjusting Work Function Through Adjusting Deposition Temperature

Номер патента: US20240297080A1. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Semiconductor device with low concentration opposite type doping drain end gate electrode

Номер патента: US20240363720A1. Автор: Henry Litzmann Edwards. Владелец: Texas Instruments Inc. Дата публикации: 2024-10-31.

Method for improving metal work function boundary effect

Номер патента: US11756798B2. Автор: Wenyin Weng. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2023-09-12.

Method for improving metal work function boundary effect

Номер патента: US20220406615A1. Автор: Wenyin Weng. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2022-12-22.

Self aligned structure and method for high-K metal gate work function tuning

Номер патента: US09899384B2. Автор: Kangguo Cheng,Bruce B. Doris,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2018-02-20.

Stable work function for narrow-pitch devices

Номер патента: US09735250B2. Автор: Takashi Ando,Terence B. Hook,Mohit Bajaj,Rajan K. Pandey,Rajesh Sathiyanarayanan. Владелец: International Business Machines Corp. Дата публикации: 2017-08-15.

N-work function metal with crystal structure

Номер патента: US09698019B2. Автор: Chi-Cheng Hung,Kuan-Ting Liu,Jun-Nan Nian. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-04.

NFET with Aluminum-Free Work-Function Layer and Method Forming Same

Номер патента: US20240379777A1. Автор: Weng Chang,Huang-Lin Chao,Hsin-Yi Lee,Chi On Chui,Chun-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Methods of forming semiconductor device having gate electrode

Номер патента: US09627207B2. Автор: DongSuk Shin,Jeongmin Lee,Juyeon KIM,Sunguk JANG,Hosung SON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-18.

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Номер патента: US09601622B2. Автор: Hitoshi Wakabayashi,Satoru Mayuzumi. Владелец: Sony Corp. Дата публикации: 2017-03-21.

FinFET work function metal formation

Номер патента: US09601490B2. Автор: Hoon Kim,Hui Zang. Владелец: Globalfoundries Inc. Дата публикации: 2017-03-21.

Stable work function for narrow-pitch devices

Номер патента: US09583486B1. Автор: Takashi Ando,Terence B. Hook,Mohit Bajaj,Rajan K. Pandey,Rajesh Sathiyanarayanan. Владелец: International Business Machines Corp. Дата публикации: 2017-02-28.

Self aligned structure and method for high-K metal gate work function tuning

Номер патента: US09401311B2. Автор: Kangguo Cheng,Bruce B. Doris,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2016-07-26.

Systems and methods for producing low work function electrodes

Номер патента: EP2710611A1. Автор: Bernard Kippelen,Seth R. Marder,Canek Fuentes-Hernandez,Yinhua Zhou,Jae Won Shim,Jens Meyer,Antoine Kahn. Владелец: Georgia Tech Research Institute. Дата публикации: 2014-03-26.

Work function metal patterning for nanosheet cfets

Номер патента: US20240006245A1. Автор: Chen Zhang,Kangguo Cheng,Ruilong Xie,Juntao Li. Владелец: International Business Machines Corp. Дата публикации: 2024-01-04.

Vertical stacked nanosheet cmos transistors with different work function metals

Номер патента: US20200294866A1. Автор: Kangguo Cheng,Ruilong Xie,Chanro Park,Juntao Li. Владелец: International Business Machines Corp. Дата публикации: 2020-09-17.

Work function metal patterning for nanosheet CFETs

Номер патента: US11798851B2. Автор: Chen Zhang,Kangguo Cheng,Ruilong Xie,Juntao Li. Владелец: International Business Machines Corp. Дата публикации: 2023-10-24.

Methods for near surface work function engineering

Номер патента: US11837473B2. Автор: Taichou Papo CHEN. Владелец: Applied Materials Inc. Дата публикации: 2023-12-05.

Semiconductor device having multiple work functions and manufacturing method thereof

Номер патента: US20180269106A1. Автор: Jie Zhao,Jiaqi Yang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-09-20.

Low undercut n-p work function metal patterning in nanosheet replacement metal gate process

Номер патента: US20190214311A1. Автор: Jing Guo,Ekmini Anuja De Silva,Zhenxing Bi,Ruqiang Bao,Indira Seshadri,Sivananda Kanakasabapathy,Romain J. Lallement. Владелец: International Business Machines Corp. Дата публикации: 2019-07-11.

Work function tuning in semiconductor devices

Номер патента: US20230317446A1. Автор: Cheng-Lung Hung,Sheng-Yung Chang,Hsin-Yi Lee,Chi On Chui. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

Methods of forming integrated circuit devices having stacked gate electrodes

Номер патента: US7998810B2. Автор: Sang-Woo Lee,Byung-hee Kim,Gil-heyun Choi,Jin-ho Park,Chang-Won Lee,Eun-ji Jung,Jeong-gil Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-16.

Method for tuning metal gate work function before contact formation in fin-shaped field effect transistor manufacturing process

Номер патента: US9576803B2. Автор: Ching-Yun Chang,Yen-Chen Chen,Kuo-Chih Lai,Yang-Ju Lu,Shih-Min Chou,Yun Tzu Chang,Fang-Yi Liu,Hsiang-Chieh Yen,Nien-Ting Ho. Владелец: United Microelectronics Corp. Дата публикации: 2017-02-21.

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Номер патента: US9337305B2. Автор: Hitoshi Wakabayashi,Satoru Mayuzumi. Владелец: Sony Corp. Дата публикации: 2016-05-10.

Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes

Номер патента: CA1289243C. Автор: Donald M. Kenney. Владелец: International Business Machines Corp. Дата публикации: 1991-09-17.

Mesfet transistor with air layer between gate electrode connections and substrate

Номер патента: CA1266132A. Автор: Giampiero Donzelli. Владелец: Telettra Telefonia Elettronica e Radio SpA. Дата публикации: 1990-02-20.

Method for forming gate electrode of semiconductor device

Номер патента: KR100877256B1. Автор: 조은상. Владелец: 주식회사 동부하이텍. Дата публикации: 2009-01-09.

Cap removal for gate electrode structures with reduced complexity

Номер патента: US20190326409A1. Автор: Peter Baars,Hans-Juergen Thees. Владелец: Globalfoundries Inc. Дата публикации: 2019-10-24.

Methods of forming semiconductor device having gate electrode

Номер патента: US20160133728A1. Автор: DongSuk Shin,Jeongmin Lee,Juyeon KIM,Sunguk JANG,Hosung SON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-05-12.

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Номер патента: US20190326306A1. Автор: Kiyohiko Sakakibara,Kenji Sugiura,Zhixin Cui,Mitsuteru Mushiga,Hisakazu Otoi. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-10-24.

Confined work function material for gate-all around transistor devices

Номер патента: US11430660B2. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,ChoongHyun Lee,Jingyun Zhang. Владелец: International Business Machines Corp. Дата публикации: 2022-08-30.

Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems

Номер патента: US11908932B2. Автор: Kevin J. Torek,Kamal M. Karda,Fatma Arzum Simsek-Ege,Yunfei GAO,Kamal K. Muthukrishnan. Владелец: Micron Technology Inc. Дата публикации: 2024-02-20.

Process of forming a high electron mobility transistor including a gate electrode layer spaced apart from a silicon nitride film

Номер патента: US11710773B2. Автор: Yukinori Nose,Kenta Sugawara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2023-07-25.

Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor

Номер патента: EP1649506A1. Автор: Karsten Wieczorek,Thorsten Kammler,Thomas Feudel,Wolfgang Buchholtz. Владелец: Advanced Micro Devices Inc. Дата публикации: 2006-04-26.

Field-effect transistors with a t-shaped gate electrode

Номер патента: US20180269295A1. Автор: John J. Ellis-Monaghan,Steven M. Shank,Alvin J. Joseph. Владелец: Globalfoundries Inc. Дата публикации: 2018-09-20.

Ic structure with gate electrode fully within v-shaped cavity

Номер патента: US20240178290A1. Автор: Steven M. Shank,Aaron L. Vallett,Rajendran Krishnasamy,Michel Abou-Khalil,Megan Lydon-Nuhfer,Sarah A. McTaggart. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-05-30.

Confined work function material for gate-all around transistor devices

Номер патента: US20200273710A1. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,ChoongHyun Lee,Jingyun Zhang. Владелец: International Business Machines Corp. Дата публикации: 2020-08-27.

Confined work function material for gate-all around transistor devices

Номер патента: US20210118683A1. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,ChoongHyun Lee,Jingyun Zhang. Владелец: International Business Machines Corp. Дата публикации: 2021-04-22.

Ic structure with gate electrode fully within v-shaped cavity

Номер патента: EP4376092A1. Автор: Steven M. Shank,Aaron L. Vallett,Rajendran Krishnasamy,Michel Abou-Khalil,Megan Lydon-Nuhfer,Sarah A. McTaggart. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-05-29.

Finfet work function metal formation

Номер патента: US20160163705A1. Автор: Hoon Kim,Hui Zang. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-09.

Finfet work function metal formation

Номер патента: US20150021704A1. Автор: Hoon Kim,Hui Zang. Владелец: Globalfoundries Inc. Дата публикации: 2015-01-22.

Bonded article with improved work function uniformity and method for making the same

Номер патента: EP1063670A3. Автор: Victor Katsap,Waren K. Waskiewicz. Владелец: Lucent Technologies Inc. Дата публикации: 2006-05-10.

Stable work function for narrow-pitch devices

Номер патента: US20170148892A1. Автор: Takashi Ando,Terence B. Hook,Mohit Bajaj,Rajan K. Pandey,Rajesh Sathiyanarayanan. Владелец: International Business Machines Corp. Дата публикации: 2017-05-25.

Adjusting work function through adjusting deposition temperature

Номер патента: US12009264B2. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-11.

Self aligned structure and method for high-k metal gate work function tuning

Номер патента: US20160315083A1. Автор: Kangguo Cheng,Bruce B. Doris,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2016-10-27.

Dual work function buried gate type transistor and method for fabricating the same

Номер патента: US09704988B2. Автор: Tae-Kyung Oh. Владелец: SK hynix Inc. Дата публикации: 2017-07-11.

Field effect transistor with multiple gate dielectrics and dual work-functions with precisely controlled gate lengths

Номер патента: US11791396B2. Автор: Kangguo Cheng,Ruilong Xie,Chanro Park,Julien Frougier. Владелец: International Business Machines Corp. Дата публикации: 2023-10-17.

Dual work function recessed access device and methods of forming

Номер патента: US09543433B2. Автор: Sanh D. Tang,Venkatesan Anathan. Владелец: Micron Technology Inc. Дата публикации: 2017-01-10.

Dual work function gate in cmos device

Номер патента: WO2006063239A1. Автор: Mohammed A. Fathimulla. Владелец: HONEYWELL INTERNATIONAL INC.. Дата публикации: 2006-06-15.

Dual work function integration for stacked FinFET

Номер патента: US09627270B2. Автор: Kangguo Cheng,Pouya Hashemi,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2017-04-18.

Dual work function integration for stacked FinFET

Номер патента: US09576858B2. Автор: Kangguo Cheng,Pouya Hashemi,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2017-02-21.

Non-volatile storage element having dual work-function electrodes

Номер патента: EP2652787A1. Автор: Walid M. Hafez,Anisur Rahman. Владелец: Intel Corp. Дата публикации: 2013-10-23.

Dual work function integration for stacked finfet

Номер патента: US20160336421A1. Автор: Kangguo Cheng,Pouya Hashemi,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2016-11-17.

Semiconductor structures and methods for multi-level work function and multi-valued channel doping of nanowire transistors to improve drive current

Номер патента: US09620591B2. Автор: Jean-Pierre Colinge,Tsung-Hsing Yu,Chia-Wen Liu,Yeh Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-11.

Method of manufacturing semiconductor structure having multi-work function gate electrode

Номер патента: US11943913B2. Автор: Kai Jen,Te-Hsuan Peng,Mei-Yuan CHOU. Владелец: Winbond Electronics Corp. Дата публикации: 2024-03-26.

Vertical transistor having dual work function materials and method for fabricating thereof

Номер патента: US20180294351A1. Автор: DUOHUI Bei,Zhaoxu Shen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-10-11.

Single metal gate with dual effective work function gate metal scheme

Номер патента: US20240312993A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Chun-Fu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Integrated circuit with different memory gate work functions

Номер патента: US11424261B2. Автор: Cheng-Bo Shu,Yun-Chi Wu,Chien Hung Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-23.

Nitride semiconductor device with multi-layer structure electrode having different work functions

Номер патента: US09461135B2. Автор: Masahito Kanamura. Владелец: Fujitsu Ltd. Дата публикации: 2016-10-04.

Semiconductor device having mid-gap work function metal gate electrode

Номер патента: US09461132B2. Автор: Dong-won Kim,Il-Ryong Kim,Keon-Yong Cheon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-04.

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Номер патента: US20150279948A1. Автор: Axel Scherer,Stefan Petry,Aditya Rajagopal,Oliver Plettenburg,Chieh-Feng Chang,Charles L. TSCHIRHART. Владелец: California Institute of Technology CalTech. Дата публикации: 2015-10-01.

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Номер патента: EP2877845A1. Автор: Axel Scherer,Stefan Petry,Aditya Rajagopal,Oliver Plettenburg,Chieh-Feng Chang,Charles L. TSCHIRHART. Владелец: Sanofi Inc. Дата публикации: 2015-06-03.

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Номер патента: US20150279949A1. Автор: Axel Scherer,Stefan Petry,Aditya Rajagopal,Oliver Plettenburg,Chieh-Feng Chang,Charles L. TSCHIRHART. Владелец: California Institute of Technology CalTech. Дата публикации: 2015-10-01.

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Номер патента: US09966443B2. Автор: Axel Scherer,Stefan Petry,Aditya Rajagopal,Oliver Plettenburg,Chieh-Feng Chang,Charles L. TSCHIRHART. Владелец: California Institute of Technology CalTech. Дата публикации: 2018-05-08.

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Номер патента: US09960238B2. Автор: Axel Scherer,Stefan Petry,Aditya Rajagopal,Oliver Plettenburg,Chieh-Feng Chang,Charles L. TSCHIRHART. Владелец: California Institute of Technology CalTech. Дата публикации: 2018-05-01.

Memory cell comprising a metal control gate with a work function for an enlarged operation window

Номер патента: US10879258B2. Автор: Cheng-Bo Shu,Yun-Chi Wu,Chien Hung Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-12-29.

Method for forming semiconductor device structure with gate electrode layer

Номер патента: US20210183707A1. Автор: Sai-Hooi Yeong,Jin-Aun Ng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-06-17.

Test device for determining an effective work function, method of manufacturing the same and method of determining an effective work function

Номер патента: US20240118332A1. Автор: Gyeong Ho HYUN. Владелец: SK hynix Inc. Дата публикации: 2024-04-11.

Multilayer work function metal in nanosheet stacks using a sacrificial oxide material

Номер патента: WO2023104455A1. Автор: Muthumanickam Sankarapandian,Koji Watanabe,Jingyun Zhang,Ruqiang Bao. Владелец: Ibm United Kingdom Limited. Дата публикации: 2023-06-15.

Semiconductor device having through hole, source and gate electrode structures

Номер патента: US20190165097A1. Автор: Shinji Kudoh,Shunsuke Fukunaga,Taro Kondo. Владелец: Sanken Electric Co Ltd. Дата публикации: 2019-05-30.

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Номер патента: US20090179284A1. Автор: Jeffrey Peter Gambino. Владелец: Individual. Дата публикации: 2009-07-16.

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Номер патента: US20240274540A1. Автор: Deokhan Bae,Juhun PARK,Jinwook Kim,Junghoon Seo,Myungyoon Um,Inyeal Lee,Dongbeen KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-15.

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Номер патента: US20190148487A1. Автор: Shinji Kudo,Shunsuke Fukunaga,Taro Kondo. Владелец: Sanken Electric Co Ltd. Дата публикации: 2019-05-16.

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Номер патента: US20230231057A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-07-20.

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Номер патента: US20100096706A1. Автор: Jeffrey Peter Gambino. Владелец: International Business Machines Corp. Дата публикации: 2010-04-22.

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Номер патента: US20210305384A1. Автор: Masatoshi Nishikawa,Zhixin Cui,Hardwell Chibvongodze. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-09-30.

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Номер патента: US12108642B2. Автор: Kiho Bang,Jiseon Lee,Pilsuk Lee,Inhyuck YEO. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-10-01.

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Номер патента: US09985126B2. Автор: Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-05-29.

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Номер патента: US09929261B2. Автор: Jaume Roig-Guitart,Peter Moens,Johan Camiel Julia Janssens,Marnix Tack. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-03-27.

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Номер патента: US09748282B2. Автор: Jongchan Lee,Myounghwa KIM,Yoonho Khang,Joohee Jeon,Jaewook Kang. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-08-29.

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Номер патента: US09620532B2. Автор: Wei Guo,Ning Chen,LU Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-04-11.

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Номер патента: US09548383B2. Автор: Kozo Makiyama. Владелец: Fujitsu Ltd. Дата публикации: 2017-01-17.

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Номер патента: US09508860B2. Автор: Yuejun TANG. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-29.

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Номер патента: US09337289B2. Автор: Gan Wang,Keith Kwong Hon Wong,Dechao Guo,Jun Yuan,Jian Yu,Yanfeng Wang,Zhengwen Li,Chengwen Pei,Randolph F. Knarr. Владелец: Globalfoundries Inc. Дата публикации: 2016-05-10.

Front electrode with layer of thin metal film and high-work function buffer layer for use in photovoltaic device and production method thereof

Номер патента: RU2435251C2. Автор: Алексей КРАСНОВ. Владелец: Гардиан Индастриз Корп.. Дата публикации: 2011-11-27.

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Номер патента: US20140332892A1. Автор: Josephine B. Chang,Isaac Lauer,Chung-Hsun Lin,Jeffrey N. Sleight. Владелец: International Business Machines Corp. Дата публикации: 2014-11-13.

Nonvolatile semiconductor memory with transistor whose gate electrode has bird's beak

Номер патента: US20070012990A1. Автор: Kanji Osari. Владелец: Individual. Дата публикации: 2007-01-18.

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Номер патента: US20140332890A1. Автор: Josephine B. Chang,Isaac Lauer,Jeffrey W. Sleight,Chung-Hsun Lin. Владелец: International Business Machines Corp. Дата публикации: 2014-11-13.

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Номер патента: US20020030236A1. Автор: Hisato Oyamatsu. Владелец: Individual. Дата публикации: 2002-03-14.

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Номер патента: US10680113B2. Автор: Zhen Song,Guoying Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-06-09.

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Номер патента: US12120915B2. Автор: Yoshinobu Nakamura,Tadayoshi Miyamoto,Kayo Haruguchi. Владелец: Sharp Corp. Дата публикации: 2024-10-15.

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Номер патента: US09899503B2. Автор: Akio Nakagawa,Manabu Takei,Yusuke Kobayashi,Yuichi Onozawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-20.

Vertical memory devices having contact plugs contacting stacked gate electrodes

Номер патента: US09899394B2. Автор: Sung-Min Hwang,Dae-Seok Byeon,Jee-Yong Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-20.

Array substrate having a plurality of gate electrode material lines, source-drain electrode material lines and first metal lines

Номер патента: US09812469B2. Автор: Qi Yao,Feng Zhang,Bin Zhang,Xiaolong He,Zhengliang Li,Jincheng GAO,Zhanfeng CAO,Xiangchun Kong. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-11-07.

Method of manufacturing semiconductor memory device having charge accumulation layer positioned between control gate electrode and semiconductor layer

Номер патента: US09793290B2. Автор: Takuo Ohashi,Fumiki Aiso. Владелец: Toshiba Memory Corp. Дата публикации: 2017-10-17.

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Номер патента: US09748350B2. Автор: Yi-Chun Lo,Wen-Jia HSIEH,Bo-Wen HSIEH,Mi-Hua LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

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Номер патента: US09673318B1. Автор: Timothy D. Henson,Ashita Mirchandani. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-06-06.

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Номер патента: US09576971B2. Автор: Yanli Zhang,Johann Alsmeier,Akira MATSUDAIRA,Yingda Dong. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-02-21.

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Номер патента: US09576959B1. Автор: Shigenobu Maeda,Yaoqi Dong,Mun Hyeon Kim,Keun Hwi Cho,Han Su Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-21.

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Номер патента: US09543349B2. Автор: Kyung-Ho Lee,Hee-Geun Jeong,Young-Sun Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-10.

SRAM circuits with aligned gate electrodes

Номер патента: US12041761B2. Автор: Fang Chen,Jhon Jhy Liaw,Shih-Chi Fu,Yen-Huei Chen,Ren-Fen Tsui,Min-Chang Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

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Номер патента: US12046632B2. Автор: Seung Hun Lee,Haejun YU,Kyungin Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-23.

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Номер патента: US12015086B2. Автор: Jae-Hoon Lee,Tae-Young Kim,Gi-gwan PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

FinFET Device with Gate Electrode and Spacers

Номер патента: US20090114979A1. Автор: Thomas Schulz. Владелец: Individual. Дата публикации: 2009-05-07.

Method for producing a gate electrode structure

Номер патента: US20120083081A1. Автор: Anton Mauder,Hans Weber,Kurt Sorschag,Roman Knoefler,Stefan Gamerith. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2012-04-05.

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Номер патента: US20080171429A1. Автор: Kazuo Hatakeyama. Владелец: Individual. Дата публикации: 2008-07-17.

Removal of work function metal wing to improve device yield in vertical fets

Номер патента: US20200235238A1. Автор: Soon-Cheon Seo,Alexander Reznicek,ChoongHyun Lee,Injo OK. Владелец: International Business Machines Corp. Дата публикации: 2020-07-23.

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Номер патента: US20230197842A1. Автор: Peter Mueller,Thomas Morf,Cezar Bogdan Zota,Eunjung Cha. Владелец: International Business Machines Corp. Дата публикации: 2023-06-22.

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Номер патента: US12120874B2. Автор: Seonghun Jeong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-15.

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Номер патента: US20240363748A1. Автор: Pinghai Hao,Henry Litzmann Edwards,Dhanoop Varghese. Владелец: Texas Instruments Inc. Дата публикации: 2024-10-31.

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Номер патента: US09825183B2. Автор: Jong Ho Lee,Geum Jong Bae,Ho Jun Kim,Sung Dae Suk. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-21.

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Номер патента: US09786657B1. Автор: Uwe Dersch,Ricardo Pablo. Mikalo. Владелец: Globalfoundries Inc. Дата публикации: 2017-10-10.

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Номер патента: WO2024228783A1. Автор: Pinghai Hao,Henry Litzmann Edwards,Dhanoop Varghese. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2024-11-07.

Semiconductor device having gate electrode overlapping semiconductor film

Номер патента: US09680026B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-06-13.

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Номер патента: US09620637B2. Автор: Till Schloesser,Franz Hirler,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-04-11.

Methods of operating and forming semiconductor devices including dual-gate electrode structures

Номер патента: US09449677B2. Автор: Jiyoung Kim,Hyun-Woo CHUNG,HyeongSun HONG,Yoosang Hwang,Dongsoo Woo,Yongchul Oh,Gyoyoung JIN,Sungkwan Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-20.

Transistor including a gate electrode extending all around one or more channel regions

Номер патента: US09443945B2. Автор: Jan Hoentschel,Stefan Flachowsky. Владелец: Globalfoundries Inc. Дата публикации: 2016-09-13.

Light sensing device having offset gate electrode and light sensing panel and light sensing display panel using the same

Номер патента: US11830904B2. Автор: Sheng-chia LIN. Владелец: Hannstouch Solution Inc. Дата публикации: 2023-11-28.

Vertical thin film transistor with single gate electrode with micro-perforations

Номер патента: US11881515B2. Автор: Chong Uk Lee. Владелец: Solsona Enterprise LLC. Дата публикации: 2024-01-23.

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Номер патента: US20220336357A1. Автор: Deokhan Bae,Juhun PARK,Jinwook Kim,Junghoon Seo,Myungyoon Um,Inyeal Lee,Dongbeen KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-20.

Transistor component having gate electrodes and field electrodes

Номер патента: US11810958B2. Автор: Markus Zundel,Felix Buth,Margarete Deckers,Christian Feuerbaum,Uwe Schmalzbauer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-11-07.

Non-volatile memory device with reduced distance between control gate electrode and selecting gate electrode and manufacturing method thereof

Номер патента: US20190043877A1. Автор: Meng-Chun Chen,Ping-Chia Shih,Chih-Hao Pan,Chia-Wen Wang,Wen-Peng Hsu,Kuo-Lung Li. Владелец: United Microelectronics Corp. Дата публикации: 2019-02-07.

Semiconductor device having a minimized region of sheild electrode and gate electrode overlap

Номер патента: US9577055B2. Автор: Jin Woo Han. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2017-02-21.

Vertical thin film transistor with perforated or comb-gate electrode configuration

Номер патента: US20200006506A1. Автор: Kenji Nomura,Chong Uk Lee. Владелец: Solsona Enterprise LLC. Дата публикации: 2020-01-02.

Integrated circuit chip including gate electrode with oblique cut surface, and manufacturing method of the same

Номер патента: US11996364B2. Автор: Deokhan Bae,Juhun PARK,Jinwook Kim,Junghoon Seo,Myungyoon Um,Inyeal Lee,Dongbeen KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-28.

Gate electrode for a semiconductor fin device

Номер патента: SG173995A1. Автор: Yee-Chia Yeo,Chenming Hu,Hao-Yu Chen,Fu Liang Yang. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2011-09-29.

Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications

Номер патента: US12057487B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Field effect transistor including a downward-protruding gate electrode and methods for forming the same

Номер патента: US12057475B2. Автор: Tsung-Hao YEH,Shiang-Hung HUANG,HsinFu LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications

Номер патента: US11757014B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Nonvolatile semiconductor storage device having silicide in control gate electrode

Номер патента: US7705393B2. Автор: Shoichi Watanabe. Владелец: Toshiba Corp. Дата публикации: 2010-04-27.

Channelized Gate Level Cross-Coupled Transistor Device with Complimentary Pairs of Cross-Coupled Transistors Defined by Physically Separate Gate Electrodes within Gate Electrode Level

Номер патента: US20100187632A1. Автор: Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2010-07-29.

Electro-optical device incorporating pixel transistors with plural gate electrodes

Номер патента: US5644147A. Автор: Shunpei Yamazaki,Yasuhiko Takemura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1997-07-01.

Method of fabricating silicide layer on gate electrode

Номер патента: US6221725B1. Автор: Claymens Lee. Владелец: United Microelectronics Corp. Дата публикации: 2001-04-24.

Semiconductor structure with enlarged gate electrode structure and method for forming the same

Номер патента: US20210305387A1. Автор: Yi-Chun Lo,Wen-Jia HSIEH,Bo-Wen HSIEH,Mi-Hua LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-30.

Electronic device including a hemt with a segmented gate electrode and a process of forming the same

Номер патента: US20170294530A1. Автор: Jaume Roig-Guitart,Peter Moens,Johan Camiel Julia Janssens,Marnix Tack. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2017-10-12.

Field-effect transistor with a heat absorber in contact with a surface of the gate electrode on its back side

Номер патента: US11004765B2. Автор: Jun Saito,Yusuke Yamashita,Yasushi Urakami. Владелец: Denso Corp. Дата публикации: 2021-05-11.

Unitary floating-gate electrode with both N-type and P-type gates

Номер патента: US8716083B2. Автор: Allan T. Mitchell,Michael A. Wu,Imran Mahmood Khan. Владелец: Texas Instruments Inc. Дата публикации: 2014-05-06.

Semiconductor device having ring-shaped gate electrode, design apparatus, and program

Номер патента: US8552510B2. Автор: Takamitsu Onda. Владелец: Elpida Memory Inc. Дата публикации: 2013-10-08.

Display substrate having gate extension portion protruding from gate electrode of first transistor and display device

Номер патента: US11937480B2. Автор: MENG Li,LANG Liu,Zhidong Yuan,Yongqian Li,Can Yuan,Zhongyuan Wu,Dacheng Zhang. Владелец: Hefei BOE Joint Technology Co Ltd. Дата публикации: 2024-03-19.

Method of forming a gate electrode for an igfet

Номер патента: WO1998002913A2. Автор: Mark I. Gardner,H. Jim Fulford,Derick J. Wristers. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 1998-01-22.

Laterally recessed gate electrode in thin film transistors

Номер патента: US20230369506A1. Автор: Cheng Tan,Travis W. LaJoie,Mark Armstrong,Van H. Le,Abhishek Anil Sharma,Timothy JEN,Miriam R. Reshotko,Moshe Dolejsi,Deepyanti Taneja. Владелец: Intel Corp. Дата публикации: 2023-11-16.

Unitary Floating-Gate Electrode with Both N-Type and P-Type Gates

Номер патента: US20120244671A1. Автор: Allan T. Mitchell,Michael A. Wu,Imran Mahmood Khan. Владелец: Texas Instruments Inc. Дата публикации: 2012-09-27.

Wide bandgap transistor layout with l-shaped gate electrodes

Номер патента: US20240113169A1. Автор: Guillaume Alexandre Blin. Владелец: Skyworks Solutions Inc. Дата публикации: 2024-04-04.

FET semiconductor device with partial annular gate electrodes

Номер патента: EP1863088A3. Автор: Sakae Nakajima. Владелец: Renesas Electronics Corp. Дата публикации: 2010-11-24.

Manufacturing method for gate electrode and thin film transistor and display panel

Номер патента: US20220037476A1. Автор: Wei Li,En-Tsung Cho,Yuming XIA. Владелец: Beihai HKC Optoelectronics Technology Co Ltd. Дата публикации: 2022-02-03.

Manufacturing method for gate electrode and thin film transistor and display panel

Номер патента: US11901420B2. Автор: Wei Li,En-Tsung Cho,Yuming XIA. Владелец: Beihai HKC Optoelectronics Technology Co Ltd. Дата публикации: 2024-02-13.

High work function MoO2 back contacts for improved solar cell performance

Номер патента: US11011661B2. Автор: Oki Gunawan,Richard A. Haight,Douglas M. Bishop,Priscilla D. Antunez,Gloria W. Fraczak. Владелец: International Business Machines Corp. Дата публикации: 2021-05-18.

Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode

Номер патента: US8258568B2. Автор: Toshitake Yaegashi,Junichi Shiozawa. Владелец: Toshiba Corp. Дата публикации: 2012-09-04.

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Номер патента: US20100081250A1. Автор: Toshitake Yaegashi,Junichi Shiozawa. Владелец: Individual. Дата публикации: 2010-04-01.

Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same

Номер патента: US20210391351A1. Автор: Akira Inoue,Masayuki Hiroi,Takuma Takimoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-16.

Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode

Номер патента: US20120302035A1. Автор: Toshitake Yaegashi,Junichi Shiozawa. Владелец: Individual. Дата публикации: 2012-11-29.

Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode

Номер патента: US20070281428A1. Автор: Toshitake Yaegashi,Junichi Shiozawa. Владелец: Individual. Дата публикации: 2007-12-06.

Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode

Номер патента: US7645674B2. Автор: Toshitake Yaegashi,Junichi Shiozawa. Владелец: Toshiba Corp. Дата публикации: 2010-01-12.

Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode

Номер патента: US8728903B2. Автор: Toshitake Yaegashi,Junichi Shiozawa. Владелец: Toshiba Corp. Дата публикации: 2014-05-20.

Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode

Номер патента: US20110156126A1. Автор: Toshitake Yaegashi,Junichi Shiozawa. Владелец: Individual. Дата публикации: 2011-06-30.

Semiconductor device having a gate electrode, an interlayer insulating film and a barrier metal provided in a trench

Номер патента: US12094939B2. Автор: Shinsuke Harada,Yusuke Kobayashi,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-09-17.

Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device

Номер патента: US09620512B1. Автор: Masatoshi Nishikawa,Fumiaki TOYAMA,Junji Oh,Hiroaki Koketsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-04-11.

Photoelectric conversion device, solid-state image pickup unit, and electronic apparatuses having work function adjustment layers and diffusion suppression layers

Номер патента: US09520449B2. Автор: Masaki Murata,Ryoji Arai,Osamu Enoki,Toru Udaka,Rui Morimoto. Владелец: Sony Corp. Дата публикации: 2016-12-13.

Driving method for a semiconductor device with an oxide semiconductor layer between two gate electrodes

Номер патента: US09449706B2. Автор: Shunpei Yamazaki,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-09-20.

Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same

Номер патента: US09356129B2. Автор: Saptharishi Sriram,Fabian Radulescu. Владелец: Cree Inc. Дата публикации: 2016-05-31.

Method of forming a gate electrode in a semiconductor device and method of manufacturing a non-volatile memory device using the same

Номер патента: US6660573B2. Автор: Myoung-Sik Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-12-09.

Semiconductor device with reduced stress applied to gate electrode

Номер патента: US5448096A. Автор: Yasutaka Kohno. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-09-05.

Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device

Номер патента: US20050042828A1. Автор: Jae-Hyun Park,Chul-soon Kwon,Jung-Ho Moon,Jae-Min Yu,Don-Woo Lee,In-Gu Yoon,Yong-Sun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-02-24.

Variable threshold voltage gate electrode for higher performance mosfets

Номер патента: US6222251B1. Автор: Thomas C. Holloway. Владелец: Texas Instruments Inc. Дата публикации: 2001-04-24.

Method of forming semiconductor devices using gate electrode length and spacer width for controlling drivecurrent strength

Номер патента: US5863824A. Автор: Mark I. Gardner,Jim H. Fulford,Anthony Toprac. Владелец: Advanced Micro Devices Inc. Дата публикации: 1999-01-26.

Semiconductor device with increased distance between channel edges and a gate electrode

Номер патента: US5747828A. Автор: Masahiro Adachi,Takashi Funai,Akihiro Hata. Владелец: Sharp Corp. Дата публикации: 1998-05-05.

Charge transfer device having an output gate electrode extending over a floating diffusion layer

Номер патента: US5539226A. Автор: Masahide Hirama,Tadakuni Narabu,Yasuhito Maki,Seiichi Kawamoto. Владелец: Sony Corp. Дата публикации: 1996-07-23.

Extended-drain metal-oxide-semiconductor devices with a notched gate electrode

Номер патента: US11791392B2. Автор: Upinder Singh,Bong Woong Mun,Jeoung Mo KOO. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-10-17.

Device with a recessed gate electrode that has high thickness uniformity

Номер патента: US11846871B2. Автор: Ming Chyi Liu,Tung-He Chou,Hung-Shu Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-19.

Solid state tissue equivalent detector with gate electrodes

Номер патента: US10923535B2. Автор: Michael Bardash. Владелец: Individual. Дата публикации: 2021-02-16.

Method and structure for elevated source/drain with polished gate electrode insulated gate field effect transistors

Номер патента: US6140190A. Автор: Thomas E. Spikes, Jr.,Mark I. Gardner,Michael P. Duane. Владелец: Advanced Micro Devices Inc. Дата публикации: 2000-10-31.

Vertical thin film transistor with dual gate electrodes

Номер патента: US20240113191A1. Автор: Chong Uk Lee. Владелец: Solsona Enterprise LLC. Дата публикации: 2024-04-04.

Method of determining thickness of memory gate electrode during device manufacture

Номер патента: US11676870B2. Автор: Hiroaki Mizushima,Kounosuke TATEISHI. Владелец: Renesas Electronics Corp. Дата публикации: 2023-06-13.

Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes

Номер патента: US20210050359A1. Автор: James Kai,Johann Alsmeier,Murshed CHOWDHURY. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-02-18.

Device with a recessed gate electrode that has high thickness uniformity

Номер патента: US20240061320A1. Автор: Ming Chyi Liu,Tung-He Chou,Hung-Shu Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-22.

Solid State Tissue Equivalent Detector With Gate Electrodes

Номер патента: US20190109179A1. Автор: Michael Bardash. Владелец: Individual. Дата публикации: 2019-04-11.

Solid State Tissue Equivalent Detector With Gate Electrodes

Номер патента: US20200235167A1. Автор: Michael Bardash. Владелец: Individual. Дата публикации: 2020-07-23.

Method of manufacturing semiconductor device having gate electrodes with dopant of different conductive types

Номер патента: US20230411395A1. Автор: Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2023-12-21.

Electronic Device Including a Gate Electrode Having Portions with Different Conductivity Types

Номер патента: US20100289072A1. Автор: Burchell B. Baptiste. Владелец: SPANSION LLC. Дата публикации: 2010-11-18.

Silicon controlled rectifier with a gate electrode for electrostatic discharge protection

Номер патента: US20220181474A1. Автор: RAUNAK Kumar,Prantik Mahajan,Kyong Jin HWANG,Robert Jr Gauthier Jr. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2022-06-09.

Work function control in gate structures

Номер патента: US12132112B2. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Work Function Control In Gate Structures

Номер патента: US20240347636A1. Автор: Weng Chang,Cheng-Lung Hung,Hsin-Yi Lee,Chi On Chui,Ji-Cheng Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

Semiconductor device including first and second gate electrodes and stack of insulating layers

Номер патента: US09705003B2. Автор: Takayuki Abe,Shunpei Yamazaki,Hideaki Shishido. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-07-11.

Semiconductor devices having work function adjusting films with chamfered top surfaces

Номер патента: US09627380B2. Автор: Ju-youn Kim,Kwang-You Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-18.

Memory transistors with buried gate electrodes

Номер патента: US09472557B2. Автор: Kazutaka Manabe. Владелец: Longitude Semiconductor SARL. Дата публикации: 2016-10-18.

Methods for tailoring electrode work function using interfacial modifiers for use in organic electronics

Номер патента: US09431612B2. Автор: Qun Chen,Jillian Buriak,Brian Worfolk. Владелец: University of Alberta. Дата публикации: 2016-08-30.

Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication

Номер патента: US20110020987A1. Автор: Brian S. Doyle,Robert S. Chau,Suman Datta,Scott A. Hareland,Rafael Rios,Tom Linton. Владелец: Individual. Дата публикации: 2011-01-27.

Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same

Номер патента: CA2668103A1. Автор: Alexey Krasnov. Владелец: Alexey Krasnov. Дата публикации: 2008-05-15.

Methods of fabricating transistors including supported gate electrodes and related devices

Номер патента: CA2634068C. Автор: Scott Allen,Scott Thomas Sheppard,Richard Peter Smith. Владелец: Cree Inc. Дата публикации: 2015-06-30.

Thin film transistor with a high impurity region overlapping the gate electrode

Номер патента: US8263982B2. Автор: Hidenori Kawata. Владелец: Seiko Epson Corp. Дата публикации: 2012-09-11.

Thin film transistor having dual insulation layer with a window above gate electrode

Номер патента: US5828082A. Автор: Biing-Seng Wu. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 1998-10-27.

Memory chip structure having gaa transistors with different threshold voltages and work functions for improving performances in multiple applications

Номер патента: US20220231145A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-21.

3d-stacked semiconductor device including gate structure with rmg inner spacer protecting lower work-function metal layer

Номер патента: EP4270461A1. Автор: Byounghak Hong,Seungchan Yun,Gunho JO,Jaejik Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-01.

Semiconductor device having a gate electrode embedded in a trench

Номер патента: US10263076B2. Автор: Mitsuhiro Yoshimura,Masahiro HATAKENAKA. Владелец: Ablic Inc. Дата публикации: 2019-04-16.

Select gate materials having different work functions in 3d nand non-volatile memory

Номер патента: WO2014165461A4. Автор: Masaaki Higashitani,Yingda Dong. Владелец: SANDISK TECHNOLOGIES INC.. Дата публикации: 2014-11-13.

Methods for fabricating integrated circuits with robust gate electrode structure protection

Номер патента: US20150132914A1. Автор: Markus Lenski,Joanna WASYLUK,Dominic Thurmer,Ardechir Pakfar. Владелец: Globalfoundries Inc. Дата публикации: 2015-05-14.

Memory chip structure having gaa transistors with different threshold voltages and work functions for improving performances in multiple applications

Номер патента: US20230369434A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Power semiconductor device with an insulated trench gate electrode

Номер патента: US20240021670A1. Автор: Marco Bellini,Lars Knoll,Gianpaolo Romano. Владелец: Hitachi Energy Switzerland AG. Дата публикации: 2024-01-18.

Semiconductor device comprising a gate electrode

Номер патента: WO2006112080A1. Автор: Takeshi Watanabe. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2006-10-26.

Soi mosfet device having second gate electrodes for threshold voltage control

Номер патента: US20040070031A1. Автор: Shunsuke Baba. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2004-04-15.

Electronic device including a gate electrode having portions with different conductivity types

Номер патента: US8310008B2. Автор: Burchell B. Baptiste. Владелец: SPANSION LLC. Дата публикации: 2012-11-13.

Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same

Номер патента: US20140246699A1. Автор: Saptharishi Sriram,Fabian Radulescu. Владелец: Cree Inc. Дата публикации: 2014-09-04.

3d-stacked semiconductor device including gate structure with rmg inner spacer protecting lower work-function metal layer

Номер патента: US20230343845A1. Автор: Byounghak Hong,Seungchan Yun,Gunho JO,Jaejik Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-26.

Semiconductor devices having gate electrodes with ring-shaped segments therein

Номер патента: US20240164106A1. Автор: Dong Jin Lee,Jun Hee Lim,Kang-Oh Yun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-16.

Semiconductor device including a gate electrode

Номер патента: US20160027915A1. Автор: Il Woong KWON. Владелец: SK hynix Inc. Дата публикации: 2016-01-28.

Wide bandgap transistor layout with staggered gate electrode fingers and split active regions

Номер патента: US20240113190A1. Автор: Yu Zhu,Guillaume Alexandre Blin. Владелец: Skyworks Solutions Inc. Дата публикации: 2024-04-04.

Wide bandgap transistor layout with unequal gate electrode finger widths

Номер патента: US20240113168A1. Автор: Guillaume Alexandre Blin. Владелец: Skyworks Solutions Inc. Дата публикации: 2024-04-04.

Conductive structure and method of controlling work function of metal

Номер патента: EP3910664A1. Автор: Sangwon Kim,Changhyun KIM,Hyeonjin Shin,Kyung-Eun Byun,Changseok Lee,Eunkyu Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-17.

Wide bandgap transistor layout with staggered gate electrode fingers

Номер патента: US20240113181A1. Автор: Guillaume Alexandre Blin. Владелец: Skyworks Solutions Inc. Дата публикации: 2024-04-04.

Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device

Номер патента: EP3326205A1. Автор: Masatoshi Nishikawa,Fumiaki TOYAMA,Junji Oh,Hiroaki Koketsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-05-30.

Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device

Номер патента: WO2017074546A1. Автор: Masatoshi Nishikawa,Fumiaki TOYAMA,Junji Oh,Hiroaki Koketsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-05-04.

Semiconductor device comprising transistors having control gates and floating gate electrodes

Номер патента: US6977411B2. Автор: Masaki Ito,Shozo Kawabata,Takaaki Furuyama,Masaya Katayama. Владелец: Fujitsu Ltd. Дата публикации: 2005-12-20.

High Work Function, Manufacturable Top Electrode

Номер патента: US20140183697A1. Автор: Hiroyuki Ode,Sandra G. Malhotra,Hanhong Chen,Wim Deweerd,Arthur Gevondyan. Владелец: Intermolecular Inc. Дата публикации: 2014-07-03.

Method of fabricating a diode protecting a gate electrode of a field effect transistor

Номер патента: US20030224576A1. Автор: Yasuo Yamaguchi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-12-04.

Power semiconductor device with an insulated trench gate electrode and method of producing a power semiconductor device

Номер патента: US20240038879A1. Автор: Chiara Corvasce,Gaurav Gupta,Wolfgang Amadeus VITALE,Elizabeth BUITRAGO,Luca De Michielis. Владелец: Hitachi Energy Ltd. Дата публикации: 2024-02-01.

Introducing fluorine to gate after work function metal deposition

Номер патента: US11996453B2. Автор: Pei Ying Lai,Bo-Wen HSIEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-28.

Introducing fluorine to gate after work function metal deposition

Номер патента: US20240313068A1. Автор: Pei Ying Lai,Bo-Wen HSIEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Integrated circuit with NMOS and PMOS transistors having different threshold voltages through channel doping and gate material work function schemes

Номер патента: US09985029B2. Автор: François Andrieu. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2018-05-29.

Transistor having metal electrodes surrounding a semiconductor pillar body and corresponding work-function-induced source/drain regions

Номер патента: US09837503B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2017-12-05.

Vertical transistor with source/drain regions induced by work-function differences between a semiconductor pillar body and surrounding metal electrodes

Номер патента: US09496360B2. Автор: Fujio Masuoka,Hiroki Nakamura. Владелец: Unisantis Electronics Singapore Pte Ltd. Дата публикации: 2016-11-15.

Light-emitting diode structure having progressive work function layer

Номер патента: US9397256B2. Автор: Cheng-Yi Liu,Chih-Yi Hsieh,Yen-Shou Liu. Владелец: National Central University. Дата публикации: 2016-07-19.

High Work Function MoO2 Back Contacts for Improved Solar Cell Performance

Номер патента: US20180226524A1. Автор: Oki Gunawan,Richard A. Haight,Douglas M. Bishop,Priscilla D. Antunez,Gloria W. Fraczak. Владелец: International Business Machines Corp. Дата публикации: 2018-08-09.

High Work Function MoO2 Back Contacts for Improved Solar Cell Performance

Номер патента: US20200152815A1. Автор: Oki Gunawan,Richard A. Haight,Douglas M. Bishop,Priscilla D. Antunez,Gloria W. Fraczak. Владелец: International Business Machines Corp. Дата публикации: 2020-05-14.

A gate all around device with a work function mismatch between inner and outer gates

Номер патента: WO2024056186A1. Автор: Krishna Kumar Bhuwalka,Geert Hellings,Philippe Matagne,Gautam GADDEMANE. Владелец: IMEC VZW. Дата публикации: 2024-03-21.

Light-emitting diode structure having progressive work function layer

Номер патента: US20150243838A1. Автор: Cheng-Yi Liu,Chih-Yi Hsieh,Yen-Shou Liu. Владелец: National Central University. Дата публикации: 2015-08-27.

Test element group (TEG) system for measurement of SOI-MOSFET without a body contact comprising first and second TEGs of unequal gate electrode areas

Номер патента: US7807997B2. Автор: Osamu Yamaguchi. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2010-10-05.

Solid state radiation imager with gate electrode plane shield wires

Номер патента: CA2184429C. Автор: George Edward Possin,Jack Dean Kingsley. Владелец: General Electric Co. Дата публикации: 2007-10-30.

Copper gate electrode of liquid crystal display device and method of fabricating the same

Номер патента: US7829393B2. Автор: Wen-Ching Tsai,Yu-Wei Liu,Kuo-Yu Huang,Hui-Fen Lin. Владелец: AU OPTRONICS CORP. Дата публикации: 2010-11-09.

Charge coupled device with meander channel and elongated, straight, parallel gate electrodes

Номер патента: US4639940A. Автор: Osamu Ohtsuki. Владелец: Fujitsu Ltd. Дата публикации: 1987-01-27.

Field-effect transistors having a gate electrode positioned inside a substrate recess

Номер патента: US20230317776A1. Автор: Steven M. Shank,Rajendran Krishnasamy,Michel Abou-Khalil,Sarah McTaggart,Aaron Vallett. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-10-05.

Field-effect transistors having a gate electrode positioned inside a substrate recess

Номер патента: EP4254505A1. Автор: Steven Shank,Rajendran Krishnasamy,Michel Abou-Khalil,Aaron Vallett,Sarah Mc TAGGART. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-10-04.

Semiconductor integrated circuit device having component transistor with protected gate electrode

Номер патента: US5517050A. Автор: Kunihiro Koyabu. Владелец: NEC Corp. Дата публикации: 1996-05-14.

Three dimensional semiconductor device having a back-gate electrode

Номер патента: US20240049467A1. Автор: Yun Heub Song,Chang Han Kim,In Ku Kang,Jae Min SIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-02-08.

Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts

Номер патента: US20160149054A1. Автор: Anirban Basu,Cheng-Wei Cheng,Kuen-Ting Shiu,Amlan Majumdar,Wilfried E. Haensch. Владелец: International Business Machines Corp. Дата публикации: 2016-05-26.

Memory Transistors with Buried Gate Electrodes

Номер патента: US20150340367A1. Автор: Kazutaka Manabe. Владелец: Longitude Semiconductor SARL. Дата публикации: 2015-11-26.

Silicon controlled rectifier with a gate electrode for electrostatic discharge protection

Номер патента: US11398565B2. Автор: RAUNAK Kumar,Prantik Mahajan,Kyong Jin HWANG,Robert JR Gauthier, Jr.. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2022-07-26.

Introducing Fluorine To Gate After Work Function Metal Deposition

Номер патента: US20230068458A1. Автор: Pei Ying Lai,Bo-Wen HSIEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-02.

Field emission cathode array coated with electron work function reducing material, and method

Номер патента: US5089292A. Автор: Ivor Brodie,John M. MaCaulay,Christopher E. Holland,C. A. Spindt. Владелец: Coloray Display Corp. Дата публикации: 1992-02-18.

Method for preparing a positive electrode material through extrusion in presence of an aqueous solvent, positive electrode obtained through said method, and uses thereof

Номер патента: US09450231B2. Автор: Marc Deschamps,Sophie Madray,Stephane Kerdranvat. Владелец: Blue Solutions SA. Дата публикации: 2016-09-20.

Electrochemical polishing solution, process for electrochemically polishing graphite gate electrode and graphite gate electrode

Номер патента: US09551085B2. Автор: Meiling Liao. Владелец: Beijing BOE Vacuum Technology Co Ltd. Дата публикации: 2017-01-24.

Carbon nanomaterial functionalized needle tip modified with low work function material and preparation method thereof

Номер патента: US20220308087A1. Автор: Yuliang Zhao,Jianxun Xu,Yifei GE. Владелец: National Center for Nanosccience and Technology China. Дата публикации: 2022-09-29.

Low work function materials

Номер патента: US20200263322A1. Автор: Jonathan S. Edelson,Joseph M. Fine,Michael J. Hinton,Peter Vanderwicken,John D. Birge. Владелец: Borealis Technical Ltd. Дата публикации: 2020-08-20.

CNT X-ray source apparatus including cathode electrode, emitter, gate electrode, focusing electrode and base portion having groove for accommodating cathode electrode

Номер патента: US11791122B2. Автор: Han Sung Lee. Владелец: Individual. Дата публикации: 2023-10-17.

Vacuum envelope having niobium oxide gate electrode structure

Номер патента: US5955832A. Автор: Masaharu Tomita,Shigeo Itoh,Hisataka Ochiai,Tsuyoshi Inukai. Владелец: Futaba Corp. Дата публикации: 1999-09-21.

Gate electrode and ion mobility spectrometer

Номер патента: US20180246061A1. Автор: Hideaki Izumi,Akiko IMAZU. Владелец: Shimadzu Corp. Дата публикации: 2018-08-30.

Low work function materials

Номер патента: GB2583565A. Автор: Edelson Jonathan,Vanderwicken Peter,J Hinton Michael,M Fine Joseph,Birge John. Владелец: Borealis Technical Ltd. Дата публикации: 2020-11-04.

Method For Tuning Work Function Using Surface Photo Voltage and Producing Ultra-Low-Work-Function Surfaces, and Devices Operational Therewith

Номер патента: US20220093357A1. Автор: Nicholas A. Melosh,Kunal SAHASRABUDDHE,Daniel Riley,Igor Bargatin,Zhixun Shen,Jared Schwede. Владелец: Leland Stanford Junior University. Дата публикации: 2022-03-24.

Method for tuning work function using surface photo voltage and producing ultra-low-work-function surfaces, and devices operational therewith

Номер патента: US12046439B2. Автор: Kunal SAHASRABUDDHE,Daniel Riley,Igor Bargatin,Zhixun Shen,Jared Schwede,Nicholas A Melosh. Владелец: Leland Stanford Junior University. Дата публикации: 2024-07-23.

A method for controlling a work function of at least one surface, electrode, electrochemical cell energy storage device, photovoltaic cell and electrical component thereof

Номер патента: WO2023228196A1. Автор: Ron Naaman,Nir MAROM,Shira Yochelis,Yutao SANG,Yosef Paltiel,Nir YURAN,Uri WEINHEBER. Владелец: Chiral Ltd. Дата публикации: 2023-11-30.

Conductive Material Master Batch and Dry Electrode Obtained By Using the Same

Номер патента: US20240266542A1. Автор: Sang-Min Kwak,Nam-Jeong Lee,Jae-Sung Han,Dong-Oh SHIN,Kwang-Ho Yoo,Kyung-Hwan Yoon,Ki-Seok Lee,Seong-Wook Kang. Владелец: LG Energy Solution Ltd. Дата публикации: 2024-08-08.

System and method for work function reduction and thermionic energy conversion

Номер патента: US12102005B2. Автор: Jared William SCHWEDE,Lucas Heinrich HESS. Владелец: Spark Thermionics Inc. Дата публикации: 2024-09-24.

Method of reducing work function in carbon coated LaB6 cathodes

Номер патента: US09790620B1. Автор: Victor Katsap. Владелец: Nuflare Technology America Inc. Дата публикации: 2017-10-17.

Light emitting devices utilizing high work function electrodes

Номер патента: US5955834A. Автор: Arthur J. Epstein,Yunzhang Wang. Владелец: Ohio State University. Дата публикации: 1999-09-21.

Field emission display device with flexible gate electrode and method for manufacturing the same

Номер патента: US7439666B1. Автор: Chih-Che Kuo,Tien-Sung Liu. Владелец: Teco Nanotech Co Ltd. Дата публикации: 2008-10-21.

Cathode with improved work function and method for making the same

Номер патента: EP1063669A3. Автор: Jin Sungho,Wei Zhu,Victor Katsap,Warren K. Waskiewicz. Владелец: Lucent Technologies Inc. Дата публикации: 2006-08-16.

Electrode material with low work function and high chemical stability

Номер патента: US09812279B2. Автор: Jian Xin Yan. Владелец: Tongyuan Textile Ltd. Дата публикации: 2017-11-07.

Capacitor with charge time reducing additives and work function modifiers

Номер патента: US09793058B2. Автор: Yaru Shi,Antony P. Chacko,John T. Kinard,John Joseph Ols,Robert Ramsbottom. Владелец: Kemet Electronics Corp. Дата публикации: 2017-10-17.

Low work-function, mechanically and thermally robust emitter for thermionic energy converters

Номер патента: US09607815B2. Автор: Roger T. Howe,Jae Hyung Lee,Igor Bargatin,Bernard Vancil. Владелец: Leland Stanford Junior University. Дата публикации: 2017-03-28.

Low work function, stable compound clusters and generation process

Номер патента: WO1999060598A1. Автор: Mehdi Balooch,Alex V. Hamza,Long N. Dinh,Marcus A. Schildbach,William Ii Mclean. Владелец: The Regents of the University of California. Дата публикации: 1999-11-25.

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Номер патента: US20170047421A1. Автор: KIM Dong-Soo,LEE Jin-Yul,OH Tae-Kyung,KIM Eun-Jeong. Владелец: . Дата публикации: 2017-02-16.

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Номер патента: US20160181377A1. Автор: OH Tae-Kyung. Владелец: . Дата публикации: 2016-06-23.

semiconductor device having dual work function gate structure

Номер патента: CN105702730A. Автор: 金东洙,金银贞,李振烈,吴泰京. Владелец: Hynix Semiconductor Inc. Дата публикации: 2016-06-22.

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Номер патента: CN105702730B. Автор: 金东洙,金银贞,李振烈,吴泰京. Владелец: SK hynix Inc. Дата публикации: 2020-09-08.

Memory transistor with multiple charge storing layers and a high work function gate electrode

Номер патента: US09929240B2. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Cypress Semiconductor Corp. Дата публикации: 2018-03-27.

TRANSISTOR HAVING DUAL WORK FUNCTION BURIED GATE ELECTRODE AND METHOD FOR FABRICATING THE SAME

Номер патента: US20170069735A1. Автор: LEE Jin-Yul,OH Tae-Kyung,KIM Su-Ho. Владелец: . Дата публикации: 2017-03-09.

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Номер патента: US20150214313A1. Автор: LEE Jin-Yul,OH Tae-Kyung,KIM Su-Ho. Владелец: . Дата публикации: 2015-07-30.

Dual work function semiconductor structure with borderless contact and method of fabricating the same

Номер патента: TW582113B. Автор: Yujun Li,Qiuyi Ye,William R Tonti. Владелец: Ibm. Дата публикации: 2004-04-01.

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Номер патента: US12009401B2. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Longitude Flash Memory Solutions Ltd. Дата публикации: 2024-06-11.

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Номер патента: US20140106556A1. Автор: Spessot Alessio,Caillat Christian,Ragnarsson Lars-Ake,Schram Tom,Fazan Pierre,Ritzenthaler Romain. Владелец: IMEC. Дата публикации: 2014-04-17.

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Номер патента: US20150263167A1. Автор: MIYATA Toshitaka. Владелец: . Дата публикации: 2015-09-17.

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Номер патента: US20210296463A1. Автор: Ando Takashi,Reznicek Alexander,Xie Ruilong,Hashemi Pouya. Владелец: . Дата публикации: 2021-09-23.

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Номер патента: KR102162733B1. Автор: 강동균. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2020-10-07.

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Номер патента: KR102055333B1. Автор: 오태경. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2020-01-22.

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Номер патента: US9985105B2. Автор: Shin-Yu Nieh,Tieh-Chiang Wu,Hai-Han Hung,Jei-Cheng Huang,Wei-Ming Liao,Hsiu-Chun Lee. Владелец: Nanya Technology Corp. Дата публикации: 2018-05-29.

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Номер патента: US20130337656A1. Автор: CHAMBERS James Joseph,NIIMI Hiroaki. Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2013-12-19.

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Номер патента: US20220005929A1. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Longitude Flash Memory Solutions Ltd.. Дата публикации: 2022-01-06.

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Номер патента: US20200006479A1. Автор: Ando Takashi,Reznicek Alexander,Zhang Jingyun,Lee Choonghyun,Hashemi Pouya. Владелец: . Дата публикации: 2020-01-02.

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Номер патента: US20200013863A1. Автор: Polishchuk Igor,Levy Sagy Charel,Ramkumar Krishnaswarny. Владелец: . Дата публикации: 2020-01-09.

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Номер патента: US20150041880A1. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Cypress Semiconductor Corp. Дата публикации: 2015-02-12.

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Номер патента: US20160093717A1. Автор: OH Tae-Kyung. Владелец: . Дата публикации: 2016-03-31.

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Номер патента: US20190131394A1. Автор: Ando Takashi,Reznicek Alexander,Zhang Jingyun,Lee Choonghyun,Hashemi Pouya. Владелец: . Дата публикации: 2019-05-02.

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Номер патента: US20200152752A1. Автор: Ramkumar Krishnaswamy,Polishchuk Igor,Levy Sagy Charel. Владелец: . Дата публикации: 2020-05-14.

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Номер патента: US20170186883A1. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Cypress Semiconductor Corp. Дата публикации: 2017-06-29.

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Номер патента: US20210217862A1. Автор: Ramkumar Krishnaswamy,Polishchuk Igor,Levy Sagy Charel. Владелец: . Дата публикации: 2021-07-15.

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Номер патента: US20150214314A1. Автор: OH Tae-Kyung. Владелец: . Дата публикации: 2015-07-30.

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Номер патента: US20190393307A1. Автор: Ando Takashi,Reznicek Alexander,Zhang Jingyun,Lee Choonghyun,Hashemi Pouya. Владелец: . Дата публикации: 2019-12-26.

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Номер патента: US9601590B2. Автор: Dong-Kyun Kang. Владелец: SK hynix Inc. Дата публикации: 2017-03-21.

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Номер патента: US9093318B2. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Cypress Semiconductor Corp. Дата публикации: 2015-07-28.

Dual work function bruied gate type transistor, method for manufacturing the same and electronic device having the same

Номер патента: KR20150137428A. Автор: 강동균. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2015-12-09.

Dual work-function metal gate using tungsten films and method for fabricating the same

Номер патента: KR100831974B1. Автор: 김태균,차태호,전승준,전윤석. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2008-05-26.

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Номер патента: US20230023852A1. Автор: Krishnaswamy Ramkumar,Igor Polishchuk,Sagy Charel Levy. Владелец: Longitude Flash Memory Solutions Ltd.. Дата публикации: 2023-01-26.

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Номер патента: KR102123845B1. Автор: 민병규. Владелец: 한국전자통신연구원. Дата публикации: 2020-06-18.

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Номер патента: US20170301763A1. Автор: Thomas Feil,Michael Hutzler. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-10-19.

Work function layers for transistor gate electrodes

Номер патента: US20220077296A1. Автор: Huang-Lin Chao,Chung-Liang Cheng,Ziwei Fang,Chun-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-10.

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Номер патента: US20200373400A1. Автор: Huang-Lin Chao,Chung-Liang Cheng,Ziwei Fang,Chun-I Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-26.

Semiconductor device with profiled work-function metal gate electrode and method of making

Номер патента: KR101789865B1. Автор: 웽 창,다위안 리,쿠안팅 리우,헝친 청,시엔밍 리,션밍 장,웨이젠 로. Владелец: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드. Дата публикации: 2017-10-25.

Display device comprising dual transistor with LDD regions overlapping the gate electrodes and one of a source electrode and a drain electrode of first transistor is electrically connected to the second gate electrode

Номер патента: US9366971B2. Автор: Hiroki Adachi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-06-14.

Method of manufacturing semiconductor device including air space formed around gate electrode

Номер патента: US7358179B2. Автор: Tetsuya Ogawa,Hiroyuki Minami,Toshiaki Kitano. Владелец: Mitsubishi Electric Corp. Дата публикации: 2008-04-15.

Method of manufacturing semiconductor device including air space formed around gate electrode

Номер патента: US20060199322A1. Автор: Tetsuya Ogawa,Hiroyuki Minami,Toshiaki Kitano. Владелец: Mitsubishi Electric Corp. Дата публикации: 2006-09-07.

Method of reducing control gate electrode curvature in three-dimensional memory devices

Номер патента: US09589839B1. Автор: Hiroyuki Ogawa,Kiyohiko Sakakibara,Akira MATSUDAIRA,Yusuke Ikawa,Eisuke Takii,Seiji Shimabukuro,Kengo Kajiwara. Владелец: SanDisk Technologies LLC. Дата публикации: 2017-03-07.

Cell of Semiconductor Device Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks

Номер патента: US20100019281A1. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2010-01-28.

Process for production of gate electrode and gate electrode structure

Номер патента: US20020025664A1. Автор: Norihiko Samoto,Akio Wakejima,Walter Contrata. Владелец: NEC Corp. Дата публикации: 2002-02-28.

ELECTROCHEMICAL POLISHING SOLUTION, PROCESS FOR ELECTROCHEMICALLY POLISHING GRAPHITE GATE ELECTRODE AND GRAPHITE GATE ELECTRODE

Номер патента: US20150247255A1. Автор: Liao Meiling. Владелец: . Дата публикации: 2015-09-03.

Semiconductor Device Having a Field Electrode and a Gate Electrode in a Trench Structure and Manufacturing Method

Номер патента: US20180286944A1. Автор: Zundel Markus,Meiser Andreas,Wood Andrew Christopher Graeme,Bach Karl-Heinz,Kampen Christian,Kotz Dietmar. Владелец: . Дата публикации: 2018-10-04.

Method for forming gate electrode of semiconductor device to improve characteristic of gate electrode

Номер патента: KR100418566B1. Автор: 박동수,최병대. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-07-22.

Method for forming semiconductor device capable of preventing connection between gate electrode and conducting pattern neighboring gate electrode

Номер патента: KR100349695B1. Автор: 양국승. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2002-08-24.

Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode

Номер патента: US6346451B1. Автор: Mark Simpson,Theodore Letavic. Владелец: Philips Electronics North America Corp. Дата публикации: 2002-02-12.

Semiconductor device esp. FET or HEMT with T=shaped gate - has gate electrode vertical leg height at least equal to half total electrode height

Номер патента: FR2694657A1. Автор: Tetsuya Yagi,Takahiro Nakamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 1994-02-11.

Semiconductor devices including buried gate electrodes and isolation layers and methods of forming semiconductor devices including buried gate electrodes and isolation layers using self aligned double patterning

Номер патента: US8486818B2. Автор: Kye-hee Yeom. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-16.

Integrated circuit device and associated layout including separated diffusion regions of different type each having four gate electrodes with each of two complementary gate electrode pairs formed from respective linear conductive segment

Номер патента: US8030689B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2011-10-04.

Highly doped gate electrode made by rapidly melting and resolidifying the gate electrode

Номер патента: US7557021B2. Автор: Amitabh Jain. Владелец: Texas Instruments Inc. Дата публикации: 2009-07-07.

Cell of Semiconductor Device Having Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and At Least Eight Transistors

Номер патента: US20100025736A1. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2010-02-04.

Integrated circuit with gate electrode level including at least six linear-shaped conductive structures forming gate electrodes of transisters with at least one pair of linear-shaped conductive structures having offset ends

Номер патента: US8129754B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2012-03-06.

Nonvolatile memory device having a memory-transistor gate-electrode provided with a charge-trapping gate-dielectric layer and two sidewall select-transistor gate-electrodes

Номер патента: US11315942B2. Автор: Hua Shao,Naoki Tsuji,Xiaoliang Tang,Guanglong Chen. Владелец: Shanghai Huali Integrated Circuit Manufacturing Co Ltd. Дата публикации: 2022-04-26.

Integrated circuit including gate electrode level region including at least three linear-shaped conductive structures of equal length having aligned ends and positioned at equal pitch and forming multiple gate electrodes of transistors of different type

Номер патента: US8217428B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2012-07-10.

Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions

Номер патента: US5960270A. Автор: Brad Smith,Suresh Venkatesan,Veena Misra,Christopher C. Hobbs,Jeffrey S. Cope,Earnest B. Wilson. Владелец: Motorola Inc. Дата публикации: 1999-09-28.

Method of enlarging contact area of a gate electrode, semiconductor device having a surface-enlarged gate electrode, and method of manufacturing the same

Номер патента: US20060108650A1. Автор: Chan-Hyung Cho,Sung-Gyu Park. Владелец: Sung-Gyu Park. Дата публикации: 2006-05-25.

Method for forming a V-shaped gate electrode in a semiconductor device, and the structure of the electrode

Номер патента: KR100239994B1. Автор: 히데히코 사사키,야스시 요코이,고지 몬덴. Владелец: 무라타 야스타카. Дата публикации: 2000-01-15.

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Номер патента: US20100006947A1. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2010-01-14.

Lateral thin-film silicon-on-insulator (SOI) device having gate electrode and field palte electrode

Номер патента: CN1175496C. Автор: 维克,T·莱塔维克,M·辛普森,M・辛普森. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2004-11-10.

Integrated circuit including a linear-shaped conductive structure forming one gate electrode and having length greater than or equal to one-half the length of linear-shaped conductive structure forming two gate electrodes

Номер патента: US8129752B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2012-03-06.

Trench-gate transistor with gate dielectric having a first thickness between the gate electrode and the channel region and a second greater thickness between the gate electrode and the source/drain regions

Номер патента: US20220238675A1. Автор: Ning Li. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-07-28.

Dmos transistor having a trench gate electrode and method of making the same

Номер патента: EP1269549A2. Автор: Fwu-Iuan Hshieh,Yan Man Tsui,Koon Chong So. Владелец: General Semiconductor Inc. Дата публикации: 2003-01-02.

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Номер патента: WO2001071817A9. Автор: Fwu-Iuan Hshieh,Yan Man Tsui,Koon Chong So. Владелец: Gen Semiconductor Inc. Дата публикации: 2003-02-06.

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Номер патента: US20140187030A1. Автор: JI Yun-Hyuck,Kim Hyung-Chul,LEE Seung-Mi,Jang Se-Aug. Владелец: SK HYNIX INC.. Дата публикации: 2014-07-03.

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Номер патента: US20150137257A1. Автор: JI Yun-Hyuck,Kim Hyung-Chul,LEE Seung-Mi,Jang Se-Aug. Владелец: . Дата публикации: 2015-05-21.

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Номер патента: US20160172488A1. Автор: KIM Dong-Soo,LEE Jin-Yul,OH Tae-Kyung,KIM Eun-Jeong. Владелец: . Дата публикации: 2016-06-16.

Non-volatile storage element having dual work-function electrodes

Номер патента: EP2652787A4. Автор: Walid M. Hafez,Anisur Rahman. Владелец: Intel Corp. Дата публикации: 2018-01-03.

Dual work function high voltage devices

Номер патента: US20090090983A1. Автор: Jeffrey P. Gambino,Edward J. Nowak,Steven H. Voldman,James W. Adkisson,Michael J. Zierak. Владелец: International Business Machines Corp. Дата публикации: 2009-04-09.

CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL WORK FUNCTION METAL GATE INTEGRATION

Номер патента: US20140225199A1. Автор: Chudzik Michael P.,Narayanan Vijay,Frank Martin M.,Ho Herbert L.,Park Dae-Gyu,Paruchuri Vamsi K.,Moumen Naim,Jha Rashmi,Hurley Mark J.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-08-14.

DUAL WORK FUNCTION BURIED GATE TYPE TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Номер патента: US20150214362A1. Автор: OH Tae-Kyung. Владелец: . Дата публикации: 2015-07-30.

DUAL WORK FUNCTION BURIED GATE-TYPE TRANSISTOR, METHOD FOR FORMING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME

Номер патента: US20160336414A1. Автор: KANG Dong-Kyun. Владелец: . Дата публикации: 2016-11-17.

METHOD OF MANUFACTURING FOR MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WORK FUNCTION GATE ELECTRODE

Номер патента: US20170092729A1. Автор: Ramkumar Krishnaswamy,Polishchuk Igor,Levy Sagy Charel. Владелец: . Дата публикации: 2017-03-30.

Dual Work Function Recessed Access Device and Methods of Forming

Номер патента: US20140197484A1. Автор: Tang Sanh D.,Anathan Venkatesan. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2014-07-17.

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WORK FUNCTION GATE ELECTRODE

Номер патента: US20180158919A1. Автор: Ramkumar Krishnaswamy,Polishchuk Igor,Levy Sagy Charel. Владелец: CYPRESS SEMICONDUCTOR CORPORATION. Дата публикации: 2018-06-07.

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WORK FUNCTION GATE ELECTRODE

Номер патента: US20140264551A1. Автор: Ramkumar Krishnaswamy,Polishchuk Igor,Levy Sagy Charel. Владелец: CYPRESS SEMICONDUCTOR CORPORATION. Дата публикации: 2014-09-18.

DUAL WORK FUNCTION BURIED GATE-TYPE TRANSISTOR, METHOD FOR FORMING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME

Номер патента: US20150349073A1. Автор: KANG Dong-Kyun. Владелец: . Дата публикации: 2015-12-03.

FIELD EFFECT TRANSISTOR WITH MULTIPLE GATE DIELECTRICS AND DUAL WORK-FUNCTIONS WITH PRECISELY CONTROLLED GATE LENGTHS

Номер патента: US20230008763A1. Автор: Cheng Kangguo,Xie Ruilong,Park Chanro,Frougier Julien. Владелец: . Дата публикации: 2023-01-12.

Three-dimensional memory array including dual work function floating gates and method of making the same

Номер патента: US20220254798A1. Автор: Yanli Zhang,Raghuveer S. Makala,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Jiahui Yuan. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-11.

Manufacturing method of pixel structure with data line, scan line and gate electrode formed on the same layer

Номер патента: US09449998B2. Автор: Hsiang-Lin Lin,Kuo-Yu Huang,Te-Chun Huang. Владелец: AU OPTRONICS CORP. Дата публикации: 2016-09-20.

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Номер патента: US09444029B2. Автор: Josephine B. Chang,Marcelo A. Kuroda,Brian A. Bryce. Владелец: International Business Machines Corp. Дата публикации: 2016-09-13.

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Номер патента: US6912163B2. Автор: Wei Zheng,Mark T. Ramsbey,Yun Wu,Tazrien Kamal,Hidehiko Shiraiwa. Владелец: SPANSION LLC. Дата публикации: 2005-06-28.

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Номер патента: US20130309857A1. Автор: Horak David V.,Ponoth Shom,Yang Chih-Chao,Koburger,III Charles W.,Bergendahl Marc A.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-11-21.

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Номер патента: US20140015058A1. Автор: Beyer Sven,Carter Richard,Metzger Joachim,Binder Robert. Владелец: . Дата публикации: 2014-01-16.

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Номер патента: US20150155365A1. Автор: Lee Da-Yuan,Lee Hsien-Ming,Jang Syun-Ming,Liu Kuan-Ting,Chang Weng,Lo Wei-Jen,Chung Hung-Chin. Владелец: Taiwan Semiconductor Manufacturing Company Limited. Дата публикации: 2015-06-04.

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Номер патента: US20150263004A1. Автор: KIM Dong-Won,CHEON Keon-Yong,KIM Il-ryong. Владелец: . Дата публикации: 2015-09-17.

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Номер патента: US5449931A. Автор: Hermanus L. Peek,Eleonore J. M. Daemen,Jan T. J. Bosters. Владелец: US Philips Corp. Дата публикации: 1995-09-12.

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Номер патента: US20230343863A1. Автор: Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-10-26.

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Номер патента: US20210399045A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Meng-Han LIN,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-23.

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Номер патента: US09647103B2. Автор: Michael Shur,Alexei Koudymov,Remigijus Gaska. Владелец: Sensor Electronic Technology Inc. Дата публикации: 2017-05-09.

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Номер патента: WO2019018050A1. Автор: Tong Zhang,James Kai,Takashi Orimoto,Johann Alsmeier,Shinsuke YADA,Akihisa SAI,Sayako Nagamine. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-01-24.

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Номер патента: US20160126447A1. Автор: Josephine B. Chang,Marcelo A. Kuroda,Brian A. Bryce. Владелец: International Business Machines Corp. Дата публикации: 2016-05-05.

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Номер патента: US20130168777A1. Автор: Becker Scott T.,Smayling Michael C.. Владелец: . Дата публикации: 2013-07-04.

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Номер патента: US20130168778A1. Автор: Becker Scott T.,Smayling Michael C.. Владелец: . Дата публикации: 2013-07-04.

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Номер патента: US20210183989A1. Автор: OTA Hitoshi,NOZAWA Ryoichi. Владелец: SEIKO EPSON CORPORATION. Дата публикации: 2021-06-17.

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Номер патента: FR2864703A1. Автор: Jae Yong Park,Juhn Suk Yoo. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2005-07-01.

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Номер патента: US20130119476A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: . Дата публикации: 2013-05-16.

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Номер патента: US20130200469A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: . Дата публикации: 2013-08-08.

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Номер патента: US20220052171A1. Автор: Zundel Markus,Buth Felix,Deckers Margarete,Feuerbaum Christian,Schmalzbauer Uwe. Владелец: . Дата публикации: 2022-02-17.

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Номер патента: US20220059682A1. Автор: Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2022-02-24.

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Номер патента: US20190043877A1. Автор: Shih Ping-Chia,LI Kuo-Lung,Wang Chia-Wen,Hsu Wen-Peng,Pan Chih-Hao,Chen Meng-Chun. Владелец: . Дата публикации: 2019-02-07.

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Номер патента: US20190148487A1. Автор: FUKUNAGA Shunsuke,KONDO Taro,KUDO Shinji. Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2019-05-16.

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Номер патента: US20140239408A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: Tela Innovations, Inc.. Дата публикации: 2014-08-28.

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Номер патента: US20150243701A1. Автор: JEONG HEE-GEUN,Lee Kyung-Ho,OH Young-sun. Владелец: . Дата публикации: 2015-08-27.

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Номер патента: US20170256641A1. Автор: Meiser Andreas. Владелец: . Дата публикации: 2017-09-07.

recessed gate electrode structure and method for forming the same, semiconductor device having recessed gate electrode and method for manufacturing the same

Номер патента: KR100711520B1. Автор: 이창훈,유영섭,이현덕,김효정,오정환,형용우,이공수,유대한. Владелец: 삼성전자주식회사. Дата публикации: 2007-04-27.

Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes

Номер патента: US6621121B2. Автор: Bantval Jayant Baliga. Владелец: Silicon Semiconductor Corp. Дата публикации: 2003-09-16.

Semiconductor device with switch electrode and gate electrode and method for switching a semiconductor device

Номер патента: US7952166B2. Автор: Franz Hirler,Thomas Raker. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2011-05-31.

Method for manufacturing semiconductor device with pixel electrode over gate electrode of thin film transistor

Номер патента: US8895333B2. Автор: Saishi Fujikawa,Yoko Chiba. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2014-11-25.

Oxide-based semiconductor non-linear element having gate electrode electrically connected to source or drain electrode

Номер патента: US9105609B2. Автор: Shunpei Yamazaki. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-08-11.

Dual-gate-electrode contact ring cathode surface layer structure of integrated gate electrode commutation thyristor chip

Номер патента: CN104600101A. Автор: 张翔宇,曾嵘,余占清,陈政宇,吕纲,朱童. Владелец: TSINGHUA UNIVERSITY. Дата публикации: 2015-05-06.

Systems and methods of fabricating gate electrode on trenched bottom electrode based molecular spintronics device

Номер патента: WO2022066263A1. Автор: Pawan Tyagi. Владелец: Pawan Tyagi. Дата публикации: 2022-03-31.

Semiconductor storage cell has a modulation region arranged between a first gate electrode of a gate electrode arrangement and an insulating region

Номер патента: DE10212926A1. Автор: Guenter Schmid,Christine Dehm,Thomas Haneder,Marcus Halik,Hagen Klauk,Thomas Mikolajick. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-10-16.

Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes

Номер патента: US20040016963A1. Автор: Bantval Baliga. Владелец: Individual. Дата публикации: 2004-01-29.

TRANSISTOR COMPONENT WITH GATE ELECTRODES AND FIELD ELECTRODES

Номер патента: DE102020121333A1. Автор: Markus Zundel,Felix Buth,Margarete Deckers,Christian Feuerbaum,Uwe Schmalzbauer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2022-02-17.

Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same

Номер патента: AU2002363937A1. Автор: Bantual Jayant Baliga. Владелец: Silicon Semiconductor Corp. Дата публикации: 2003-06-10.

Switching circuit for use in e.g. direct current-direct current converter, has breakdown diode and capacitor connected in series between electrode and gate electrode of transistor e.g. Insulated-gate bipolar transistor

Номер патента: DE102007013824A1. Автор: Yoshiyuki Hattori,Kyoko Okada,Makoto Kuwahara,Takaaki Kariya Aoki,Shoji Kariya Mizuno,Shigeki Kariya Takahashi,Takashi Kariya Nakano,Nozomu Kariya Akagi. Владелец: Denso Corp. Дата публикации: 2007-11-29.

Transistor with interdigital electrodes, comprising a gate terminal connected by a plurality of vertical vias to the gate electrodes

Номер патента: WO2022003265A1. Автор: Robin Jung. Владелец: Exagan. Дата публикации: 2022-01-06.

Semiconductor device with switching electrode and gate electrode and method for switching a semiconductor device

Номер патента: DE102009022032B4. Автор: Dr. Hirler Franz,Dr. Raker Thomas. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2013-11-21.

Charge-coupled image sensor comprising gate electrodes interconnected by shunt electrodes

Номер патента: EP1323184A2. Автор: Daniel W. E. Verbugt,Joris P. V. Maas,Hemanus L. Peek. Владелец: Dalsa Corp. Дата публикации: 2003-07-02.

Semiconductor memory device and semiconductor device including multilayer gate electrode

Номер патента: US7541654B2. Автор: Fumitaka Arai,Makoto Sakuma. Владелец: Toshiba Corp. Дата публикации: 2009-06-02.

Semiconductor memory device with floating gate electrode

Номер патента: US5687119A. Автор: Keun Hyung Park. Владелец: LG Semicon Co Ltd. Дата публикации: 1997-11-11.

Nonvolatile semicondutor memory with metallic silicide film electrically connected to a control gate electrode layer

Номер патента: US7705394B2. Автор: Yasuhiko Matsunaga,Masayuki Ichige,Fumitaka Arai,Atsuhiro Sato,Kikuko Sugimae. Владелец: Toshiba Corp. Дата публикации: 2010-04-27.

Method of transmitting data through local area network

Номер патента: US20050068927A1. Автор: Tai-Shui Ho,Shih-Kuang Tsai,Xiao-Qin Yu,Wen-Jiang Qing. Владелец: Inventec Appliances Corp. Дата публикации: 2005-03-31.

Magnetic device with gate electrode

Номер патента: US11730065B2. Автор: Byong Guk Park,Min-Gu Kang,Jong-Guk CHOI. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-08-15.

Method of forming gate electrode pattern in semiconductor device

Номер патента: US7544564B2. Автор: Sung Hoon Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-06-09.

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Номер патента: US11943970B2. Автор: Hiromasa Tsuboi. Владелец: Canon Inc. Дата публикации: 2024-03-26.

Memory device having word line with improved adhesion between work function member and conductive layer

Номер патента: US11937420B2. Автор: Yueh Hsu,Wei-Tong Chen. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-19.

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Номер патента: US11895820B2. Автор: Yueh Hsu,Wei-Tong Chen. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-06.

Domain name system (DNS)-based discovery of regulatory requirements for non-3GPP inter-working function (N3IWF) selection

Номер патента: US11871460B2. Автор: Meghashree Dattatri Kedalagudde,Alexandre Saso Stojanovski,Abhijeet Kolekar. Владелец: Intel Corp. Дата публикации: 2024-01-09.

Stable electrodes with modified work functions and methods for organic electronic devices

Номер патента: EP2304820A1. Автор: Bernard Kippelen,Seth Marder,Benoit Domercq,Asha Sharma,Peter Hotchkiss. Владелец: Georgia Tech Research Institute. Дата публикации: 2011-04-06.

Method for preparing a positive electrode material through extrusion in presence of an aqueous solvent, positive electrode obtained through said method, and uses thereof

Номер патента: CA2772130A1. Автор: Marc Deschamps,Sophie Madray,Stephane Kerdranvat. Владелец: Batscap SA. Дата публикации: 2011-03-17.

Method for preparing a positive electrode material through extrusion in presence of an aqueous solvent, positive electrode obtained through said method, and uses thereof

Номер патента: EP2476153A1. Автор: Marc Deschamps,Sophie Madray,Stephane Kerdranvat. Владелец: Batscap SA. Дата публикации: 2012-07-18.

Nanoparticle detection threshold determination through local minimum analysis

Номер патента: WO2023211783A1. Автор: Daniel R. Wiederin,Austin Schultz,Cole J. NARDINI. Владелец: Elemental Scientific, Inc.. Дата публикации: 2023-11-02.

Nanoparticle detection threshold determination through local minimum analysis

Номер патента: US20230352289A1. Автор: Daniel R. Wiederin,Austin Schultz,Cole J. NARDINI. Владелец: Elemental Scientific Inc. Дата публикации: 2023-11-02.

Semiconductor device having a transistor with an oxide semiconductor layer between a first gate electrode and a second gate electrode

Номер патента: US09524993B2. Автор: Yoshiyuki Kurokawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-12-20.

SLURRY OBTAINED USING BINDER FOR BATTERY ELECTRODES, ELECTRODE OBTAINED USING THE SLURRY, AND LITHIUM ION SECONDARY BATTERY OBTAINED USING THE ELECTRODE

Номер патента: US20140054496A1. Автор: ITO Daigo,Hanasaki Mitsuru,Fukase Kazunari. Владелец: SHOWA DENKO K. K.. Дата публикации: 2014-02-27.

Lithium ion secondary battery electrode binder, slurry obtained using these electrode binders, electrode obtained using these slurries, and lithium ion secondary battery obtained using these electrodes

Номер патента: JP5701519B2. Автор: 充 花崎,一成 深瀬,内田　二朗,二朗 内田,安孝 河野,悠佳 筑後,航 石口. Владелец: NEC Energy Devices Ltd. Дата публикации: 2015-04-15.

Field emission display with a sinking type gate electrode structure and method for fabricating the gate electrode structure

Номер патента: KR100879290B1. Автор: 황성연. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2009-01-16.

Dual working-electrode electrochemical detector for high performance liquid chromatography

Номер патента: US4554064A. Автор: Sam A. McClintock,William C. Purdy. Владелец: Imasco CDC Research Foundation. Дата публикации: 1985-11-19.

Method of determining electronic work function in vacuum (versions)

Номер патента: RU2346267C1. Автор: Роберт Рихардович Салем. Владелец: Инновационный технический центр Общество с ограниченной ответственностью "СИТИС". Дата публикации: 2009-02-10.

Bias control for memory cells with multiple gate electrodes

Номер патента: US12057177B2. Автор: Jaw-Juinn Horng,Szu-chun TSAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Bias control for memory cells with multiple gate electrodes

Номер патента: US20240355398A1. Автор: Jaw-Juinn Horng,Szu-chun TSAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Control method for a manually actuated lever provided for actuating an operating and/or work function

Номер патента: US20230399815A1. Автор: Christoph Wagner,Sebastian Jung,Kamlesh Gaikwad. Владелец: Deere and Co. Дата публикации: 2023-12-14.

Pre-charging a gate electrode before resuming display updating

Номер патента: US09715291B2. Автор: Petr Shepelev. Владелец: Synaptics Inc. Дата публикации: 2017-07-25.

Chemical probe field effect transistor for measuring the surface potential of a gate electrode in response to chemical exposure

Номер патента: US5576563A. Автор: Young S. Chung. Владелец: Motorola Inc. Дата публикации: 1996-11-19.

Nano-ring gate electrode nanochannels

Номер патента: US20150276664A1. Автор: Binquan Luan,Sung-wook Nam. Владелец: International Business Machines Corp. Дата публикации: 2015-10-01.

Bias control for memory cells with multiple gate electrodes

Номер патента: US20220130470A1. Автор: Jaw-Juinn Horng,Szu-chun TSAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-04-28.

Method for controlling a molding and vulcanization process of a tyre and tyre obtained through a manufacturing process wherein such a method is carried out

Номер патента: EP3898212A1. Автор: Stefano Rosario MERVIC,Andrea TRABATTONI,Fabio MARTELLOTTA. Владелец: Pirelli Tyre SpA. Дата публикации: 2021-10-27.

Method for controlling a molding and vulcanization process of a tyre and tyre obtained through a manufacturing process wherein such a method is carried out

Номер патента: WO2020128931A1. Автор: Stefano Rosario MERVIC,Andrea TRABATTONI,Fabio MARTELLOTTA. Владелец: PIRELLI TYRE S.P.A.. Дата публикации: 2020-06-25.

Image forming apparatus employing work function relationships

Номер патента: US6819899B2. Автор: Nobuhiro Miyakawa,Nobumasa Abe,Kaneo Yoda,Shinji Yasukawa,Mikio Furumizu. Владелец: Seiko Epson Corp. Дата публикации: 2004-11-16.

Driving method for photo transistor by supplying an alternate current voltage to a gate electrode and photo sensor and flat panel display using the same

Номер патента: US8212199B2. Автор: Fu-Yuan Hsu. Владелец: Chimei Innolux Corp. Дата публикации: 2012-07-03.

Shift register unit, gate electrode drive circuit and display apparatus

Номер патента: US09524686B2. Автор: Seung Woo Han,Xing Yao,Jiayang ZHAO,Yuanbo Zhang,Haifeng Jin. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-12-20.

Method of driving design on gate electrodes, and device and electronic device thereof

Номер патента: US20230103799A1. Автор: Yang Liu. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-04-06.

Transistor-based biological assay system comprising mating receptacle plate and gate electrode plate

Номер патента: EP4081793A1. Автор: Luisa Torsi,Gaetano Scamarcio,Fabrizio TORRICELLI,Zsolt Miklos Kovàcs-Vajna. Владелец: Universita degli Studi di Bari Aldo Moro. Дата публикации: 2022-11-02.

Product, suitable to be given to the human body for its protective effects and health benefits, based on cow buffalo's milk self-enriched with lactoferrin, or pure lactoferrin, obtained through membrane separative processes

Номер патента: WO2008018103B1. Автор: Pietro Raimondi. Владелец: Pietro Raimondi. Дата публикации: 2008-03-20.

Co-gate electrode between pixels structure

Номер патента: US20190228727A1. Автор: I-Ta Jiang,Che-Yao WU,Kai-Ju Chou. Владелец: Giantplus Technology Co Ltd. Дата публикации: 2019-07-25.

Product, suitable to be given to the human body for its protective effects and health benefits, based on cow buffalo's milk self-enriched with lactoferrin, or pure lactoferrin, obtained through membrane separative processes

Номер патента: EP2076140A1. Автор: Pietro Raimondi. Владелец: Individual. Дата публикации: 2009-07-08.

Method for preparing cremation crystals using catalyst obtained through reduction of phosphorus in skeletal remains

Номер патента: US20240309539A1. Автор: Dae Hoon Kim,Se Ho Boo,Mi Kyung Ko. Владелец: Individual. Дата публикации: 2024-09-19.

Hydraulic braking energy utilization for emergency steering, braking, charging accumulator(s), and/or work functions to reduce or prevent engine from overspeed, assist acceleration and/or unlimited towing

Номер патента: US12140163B2. Автор: Wenling Babbitt,W. E. Hoffner, III. Владелец: Applied Industrial Technologies Inc. Дата публикации: 2024-11-12.

Work function calibration of a non-contact voltage sensor

Номер патента: US09625557B2. Автор: Steven R. Soss,M. Brandon Steele. Владелец: Qcept Investments LLC. Дата публикации: 2017-04-18.

Improvements relating to alloys or metallic mixtures required to have low-work-function characteristics

Номер патента: GB584270A. Автор: . Владелец: Motors Liquidation Co. Дата публикации: 1947-01-10.

Method to prepare a graphene coated sponge-based electrode, electrode obtained thereof and use of the electrode for water treatment

Номер патента: WO2022069621A1. Автор: Jelena RADJENOVIC,Luis Miguel BAPTISTA PIRES,Giannis-Florjan NORRA,Nick DUINSLAEGER. Владелец: Fundació Institut Català De Recerca De L'aigua (Icra). Дата публикации: 2022-04-07.

Hydraulic valve module for steering and work functions in a work vehicle

Номер патента: EP4031439A1. Автор: Steven Johnson,Adam Adeeb. Владелец: CATERPILLAR SARL. Дата публикации: 2022-07-27.

Method to prepare a graphene coated sponge-based electrode, electrode obtained thereof and use of the electrode for water treatment

Номер патента: EP4229004A1. Автор: Jelena RADJENOVIC,Luis Miguel BAPTISTA PIRES,Giannis-Florjan NORRA,Nick DUINSLAEGER. Владелец: Fundació Institut Català De Recerca De L'aigua (Icra). Дата публикации: 2023-08-23.

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Номер патента: WO2020128933A1. Автор: Stefano Rosario MERVIC,Andrea TRABATTONI,Fabio MARTELLOTTA. Владелец: PIRELLI TYRE S.P.A.. Дата публикации: 2020-06-25.

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Номер патента: AU2022209558A9. Автор: ZAENAL Awaludin,Yoshinori Nishiki. Владелец: DE NORA PERMELEC LTD. Дата публикации: 2024-07-11.

Coating composition containing levelling agents, obtained through nitroxyl-mediated polymerisation

Номер патента: RU2395551C2. Автор: Ральф КНИШКА,Клеменс АУШРА,Андреас МЮЛЕБАХ,Зевги ЦЕРЕН. Владелец: Циба Спешиалти Кемикэлз Холдинг Инк.. Дата публикации: 2010-07-27.

Method for resurfacing monocrystalline components and components obtained through directional crystallisation

Номер патента: RU2409708C2. Автор: Фредерик БРАЙАР,Жан-Пьер ФЕРТ,Оливье ГУРБЕСВИЛЛЬ,Эрик ПИНТО. Владелец: Снекма Сервис. Дата публикации: 2011-01-20.

Implants for replacement "load-bearing" bones having hierarchically organised architecture obtained through transformation of plant structures

Номер патента: RU2585958C2. Автор: Франк Мюллер,Петер ГРАЙЛЬ,Анна ТАМПИЕРИ,Симоне СПРИО,Андреа РУФФИНИ,Юлия ВИЛЛЬ,ФЕРНАНДЕС Хулиан МАРТИНЕС,РАЙА Кармен ТОРРЕС,ФЕРИЯ Франсиско Мануэль ВАРЕЛА,РИКО Хоакин РАМИРЕС,Мари-Франсуа АРМАН. Владелец: Консилио Национале Делле Ричерке. Дата публикации: 2016-06-10.

Automatic, self-sustaining probe for measuring the work function

Номер патента: CA1248621A. Автор: Peter R. Norton,Patrick E. Bindner,Eric B. Selkirk. Владелец: Atomic Energy of Canada Ltd AECL. Дата публикации: 1989-01-10.

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Номер патента: WO2020214375A1. Автор: James Thomas SILANE,David Kenneth MATTOX. Владелец: HM Electronics, Inc.. Дата публикации: 2020-10-22.

Systems and methods for using information obtained through time-limited events among quick service restaurants

Номер патента: EP3956739A1. Автор: James Thomas SILANE,David Kenneth MATTOX. Владелец: HM Electronics Inc. Дата публикации: 2022-02-23.

Evaluation of digital content using non-intentional user feedback obtained through haptic interface

Номер патента: US09710151B2. Автор: Carlos H. Cardonha,Fernando L. Koch. Владелец: International Business Machines Corp. Дата публикации: 2017-07-18.

Automated adjustment of content composition rules based on evaluation of user feedback obtained through haptic interface

Номер патента: US09600073B2. Автор: Carlos H. Cardonha,Fernando L. Koch. Владелец: International Business Machines Corp. Дата публикации: 2017-03-21.

Apparatus for performing work functions

Номер патента: US4378959A. Автор: Kenneth J. Susnjara. Владелец: Thermwood Corp. Дата публикации: 1983-04-05.

Automatic, self sustaining probe for measuring the work function

Номер патента: US4649336A. Автор: Peter R. Norton,Patrick E. Bindner,Eric B. Selkirk. Владелец: Atomic Energy of Canada Ltd AECL. Дата публикации: 1987-03-10.

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Номер патента: US11860765B2. Автор: Jaeseung Choi,Sang Kil Cha,Daejin Lee,Kangsu Kim. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2024-01-02.

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Номер патента: US20230051654A1. Автор: Jaeseung Choi,Sang Kil Cha,Daejin Lee,Kangsu Kim. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2023-02-16.

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Номер патента: CA3224538A1. Автор: Dae Hoon Kim,Se Ho Boo,Mi Kyung Ko. Владелец: Individual. Дата публикации: 2023-01-12.

Motion detection using capacitor having different work function materials

Номер патента: US20140009175A1. Автор: Alexander Kalnitsky,Fu-Lung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-01-09.

Work function calibration of a non-contact voltage sensor

Номер патента: US20150338494A1. Автор: Steven R. Soss,M. Brandon Steele. Владелец: Individual. Дата публикации: 2015-11-26.

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Номер патента: CA3208669A1. Автор: ZAENAL Awaludin,Yoshinori Nishiki. Владелец: DE NORA PERMELEC LTD. Дата публикации: 2022-07-28.

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Номер патента: AU2022209558A1. Автор: ZAENAL Awaludin,Yoshinori Nishiki. Владелец: DE NORA PERMELEC LTD. Дата публикации: 2023-08-17.

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Номер патента: EP4283021A1. Автор: ZAENAL Awaludin,Yoshinori Nishiki. Владелец: DE NORA PERMELEC LTD. Дата публикации: 2023-11-29.

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Номер патента: US20240066536A1. Автор: ZAENAL Awaludin,Yoshinori Nishiki. Владелец: DE NORA PERMELEC LTD. Дата публикации: 2024-02-29.

Polymer obtained through controlled radical polymerization and containing at least one boronate substituent, associate thereof with a ligand compound, and application thereof

Номер патента: RU2314320C2. Автор: Этьен ФЛЕРИ,Брюно БАВУЗЕ,Матиас ДЕСТАРАК,Войцех БЗДУХА. Владелец: Родиа Шими. Дата публикации: 2008-01-10.

Additive for the physico-chemical activation of rubber powder particles and pre-treated rubber obtained through the use of said additive

Номер патента: EP4286472A1. Автор: Luis Alfonso DE LEÓN ALONSO,Aitor DEL CERRO SERENA. Владелец: Reciclado De Neumaticos De Castilla Y Leon SL. Дата публикации: 2023-12-06.

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Номер патента: US09363334B2. Автор: Avi Bar-Zeev,Blaise Aguera y Arcas,Gur Kimchi,Brian C. Beckman,Eran Yariv,Scott Isaacs,Meir Ben-Itay. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2016-06-07.

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Номер патента: US20190020733A1. Автор: Avi Bar-Zeev,Blaise Aguera y Arcas,Gur Kimchi,Brian C. Beckman,Eran Yariv,Scott Isaacs,Meir Ben-Itay. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2019-01-17.

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Номер патента: US20160261720A1. Автор: Avi Bar-Zeev,Blaise Aguera y Arcas,Gur Kimchi,Brian C. Beckman,Eran Yariv,Scott Isaacs,Meir Ben-Itay. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2016-09-08.

Light emitting element unit including varying distance between drive element gate electrodes and light emitting portions

Номер патента: US12041813B2. Автор: Tomoyoshi Ichikawa. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2024-07-16.

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Номер патента: US20130097440A1. Автор: Bar-Zeev Avi,Kimchi Gur,Beckman Brian C.,Isaacs Scott,Ben-Itay Meir,Yariv Eran,y Arcas Blaise Aguera. Владелец: MICROSOFT CORPORATION. Дата публикации: 2013-04-18.

EVENT SERVICE FOR LOCAL CLIENT APPLICATIONS THROUGH LOCAL SERVER

Номер патента: US20190020733A1. Автор: Bar-Zeev Avi,Kimchi Gur,Beckman Brian C.,Isaacs Scott,Ben-Itay Meir,Yariv Eran,Aguera y Arcas Blaise. Владелец: . Дата публикации: 2019-01-17.

Event service for local client applications through local server

Номер патента: US20160261720A1. Автор: Avi Bar-Zeev,Blaise Aguera y Arcas,Gur Kimchi,Brian C. Beckman,Eran Yariv,Scott Isaacs,Meir Ben-Itay. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2016-09-08.

High voltage gate driver ic with multi-function gating

Номер патента: KR100912294B1. Автор: 이동영,민 팽. Владелец: 인터내쇼널 렉티파이어 코포레이션. Дата публикации: 2009-08-17.

Multi-level magnetic tunnel junction nor device with wrap-around gate electrodes and methods for forming the same

Номер патента: US20240090236A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Meng-Han LIN,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same

Номер патента: US11864392B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Han-Jong Chia,Bo-Feng YOUNG,Meng-Han LIN,Chenchen Jacob WANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Electrical circuit for electronic system, has arrangement of vertical selection transistors vertically formed in substrate, and gate-electrode-ditches filled with gate-electrode-material

Номер патента: DE102006051137A1. Автор: Till Dr. Schloesser,Ulrike Dr. Gruening-Von Schwerin. Владелец: Qimonda AG. Дата публикации: 2008-05-08.

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Номер патента: US8534039B1. Автор: Thomas L. Pierson,Herman Leibowitz. Владелец: TAS Energy Inc. Дата публикации: 2013-09-17.

Optical scanners having dual surface optical elements for dual working ranges

Номер патента: CA2170934C. Автор: Duanfeng He,Paul Dvorkis,Joseph Katz,Edward Barkan,David Tsi,Howard Shepard,Joel Kahn,Mark Krichever,Boris Metlitsky,Raj Bridgelall,Vladimir Gurevich,Richard Isaac. Владелец: Symbol Technologies LLC. Дата публикации: 2007-06-19.

Hydrostatic drive, has dual working hydraulic cylinder with working piston that defines working chamber, and two hydraulic pumps with its connections connected with pressure medium reservoir and working chamber, respectively

Номер патента: DE102007025742A1. Автор: Seppo Dr. Tikkanen. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2007-12-06.

Event service for local client applications through local server

Номер патента: RU2616162C2. Автор: Ави БАР-ЗЕЕВ,Гур КИМЧИ,Брайан К. БЕКМАН,Скотт АЙЗАКС,Мейр БЭН-ИТАЙ,Еран ЯРИВ,АРКАС Блейз Агуэра И. Владелец: МАЙКРОСОФТ ТЕКНОЛОДЖИ ЛАЙСЕНСИНГ, ЭлЭлСи. Дата публикации: 2017-04-12.

Architettura per la gestione delle tensioni interne in una memoria non volatile in particolare di tipo flash dual-work a singola tensione di

Номер патента: ITMI992372A0. Автор: Antonio Russo,Lorenzo Bedarida,Simone Bartoli,Mauro Sali. Владелец: St Microelectronics Srl. Дата публикации: 1999-11-12.

Architettura per la gestione delle tensioni interne in una memoria non volatile in particolare di tipo flash dual-work a singola tensione di

Номер патента: ITMI992372A1. Автор: Antonio Russo,Lorenzo Bedarida,Simone Bartoli,Mauro Sali. Владелец: St Microelectronics Srl. Дата публикации: 2001-05-12.

Optical scanners having dual surface optical elements for dual working ranges

Номер патента: CA2580492C. Автор: Duanfeng He,Paul Dvorkis,Joseph Katz,Edward Barkan,David Tsi,Howard Shepard,Joel Kahn,Mark Krichever,Boris Metlitsky,Raj Bridgelall,Vladimir Gurevich,Richard Isaac. Владелец: Symbol Technologies LLC. Дата публикации: 2007-10-09.

Optical scanners having dual surface optical elements for dual working ranges

Номер патента: EP0752680B1. Автор: Duanfeng He,Paul Dvorkis,Joseph Katz,Edward Barkan,David Tsi,Howard Shepard,Joel Kahn,Mark Krichever,Boris Metlitsky,Raj Bridgelall,Vladimir Gurevich,Richard Isaac. Владелец: Symbol Technologies LLC. Дата публикации: 2002-08-28.

Medium and high temperature flue gas waste heat dual-working-medium combined cycle power generation device

Номер патента: CN103790732B. Автор: 董汉杰,李春国,史正武,窦春燕. Владелец: SHANDONG QINGNENG POWER CO Ltd. Дата публикации: 2015-07-08.

Annual operating dual-working-condition flue gas treatment system

Номер патента: CN108106450B. Автор: 白亮,马元,徐敬玉,黄文乐. Владелец: Haomu Shanghai Energy Saving Technology Co ltd. Дата публикации: 2023-03-10.

Dual-working condition solar heat pump cold and hot water machine unit

Номер патента: CN201221869Y. Автор: 于奎明. Владелец: 于奎明. Дата публикации: 2009-04-15.

Height adjusting method and device with dual working modes

Номер патента: CN109164760B. Автор: 高云峰,陈焱,封雨鑫,陆渊,余锦望. Владелец: Shenzhen Han's Smc Technology Co ltd. Дата публикации: 2020-07-14.

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Номер патента: CN108562196B. Автор: 王文博,张军民,孙兰兰,乔应克,易清丰,鲁国林,邢瑞英. Владелец: Hubei Institute of Aerospace Chemical Technology. Дата публикации: 2021-04-30.

Safety valve with dual working modes

Номер патента: CN105422933A. Автор: 李俊华,龚建化. Владелец: AVIC Jincheng Nanjing Engineering Institute of Aircraft Systems. Дата публикации: 2016-03-23.

Event service for local client applications through local server.

Номер патента: MX345059B. Автор: Bar-Zeev Avi,Kimchi Gur,Isaacs Scott,Ben-Itay Meir,Yariv Eran,Aguera y Arcas Blaise,C Beckman Brian. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2017-01-16.

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Номер патента: CN106424175A. Автор: 时乾中,李恕东,方凌云,肖翔. Владелец: Hefei Taitong Refrigeration Technology Co Ltd. Дата публикации: 2017-02-22.

Mophead having dual working surfaces

Номер патента: US2665441A. Автор: Goon Wong Bing. Владелец: Individual. Дата публикации: 1954-01-12.

Table item information extraction with continuous machine learning through local and global models

Номер патента: US12080091B2. Автор: Matthias Theodor Middendorf,Gisela Barbara Cäcilie Hammann,Carsten Peust. Владелец: Open Text SA ULC. Дата публикации: 2024-09-03.

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Номер патента: US20130298568A1. Автор: Pierson Thomas L.,Leibowitz Herman. Владелец: . Дата публикации: 2013-11-14.

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Номер патента: CN211775076U. Автор: 王龙,朱佳慧,王俊博,毛佳妮,谢珂,方奇,全文鹏. Владелец: China Jiliang University. Дата публикации: 2020-10-27.

Robust anatomy detection through local voting and prediction

Номер патента: WO2009085144A1. Автор: Xiang Zhou,Arun Krishnan,Yiqiang Zhan,Zhigang Peng. Владелец: SIEMENS MEDICAL SOLUTIONS USA, INC.. Дата публикации: 2009-07-09.

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Номер патента: US09453785B2. Автор: Tony Lindgren,Johan Aneros. Владелец: SCANIA CV AB. Дата публикации: 2016-09-27.

Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory

Номер патента: US20050237809A1. Автор: Hang-Ting Lue,Yen-Hao Shih. Владелец: Macronix International Co Ltd. Дата публикации: 2005-10-27.

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Номер патента: US11710334B2. Автор: Matthias Theodor Middendorf,Gisela Barbara Cäcilie Hammann,Carsten Peust. Владелец: Open Text SA ULC. Дата публикации: 2023-07-25.

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Номер патента: US20210150133A1. Автор: Matthias Theodor Middendorf,Gisela Barbara Cäcilie Hammann,Carsten Peust. Владелец: OPEN TEXT SOFTWARE GMBH. Дата публикации: 2021-05-20.

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Номер патента: US20190332662A1. Автор: Matthias Theodor Middendorf,Gisela Barbara Cäcilie Hammann,Carsten Peust. Владелец: Open Text SA ULC. Дата публикации: 2019-10-31.

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Номер патента: WO2019207549A1. Автор: Matthias Theodor Middendorf,Gisela Barbara Cäcilie Hammann,Carsten Peust. Владелец: Open Text SA ULC. Дата публикации: 2019-10-31.

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Номер патента: US20230334888A1. Автор: Matthias Theodor Middendorf,Gisela Barbara Cäcilie Hammann,Carsten Peust. Владелец: OPEN TEXT SOFTWARE GMBH. Дата публикации: 2023-10-19.

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Номер патента: US20220391580A1. Автор: Matthias Theodor Middendorf,Gisela Barbara Cäcilie Hammann,Carsten Peust. Владелец: OPEN TEXT SOFTWARE GMBH. Дата публикации: 2022-12-08.

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Номер патента: KR100303355B1. Автор: 김현수. Владелец: 박종섭. Дата публикации: 2001-11-01.

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Номер патента: EP4251127A1. Автор: Alain Moussy. Владелец: Individual. Дата публикации: 2023-10-04.

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Номер патента: US09740046B2. Автор: David Wyatt. Владелец: Nvidia Corp. Дата публикации: 2017-08-22.

Pharmaceutical composition for treatment of inner ear disorders through local administration in the tympanic area

Номер патента: US20240016766A1. Автор: Alain Moussy. Владелец: Individual. Дата публикации: 2024-01-18.

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Номер патента: US5900879A. Автор: Richard Edmond Berry,John Martin Mullaly. Владелец: International Business Machines Corp. Дата публикации: 1999-05-04.

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Номер патента: RU2612883C1. Автор: Александр Александрович Веневитин,Светлана Семеновна Веневитина,Виктор Федорович Асминин. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный лесотехнический университет имени Г.Ф. Морозова". Дата публикации: 2017-03-13.

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Номер патента: KR101955744B1. Автор: 아비 바-지브,구르 킴치,브라이언 씨 벡맨,스코트 이삭스,메이어 벤-이테이,에란 야리브,블레즈 어게어 와이어캐스. Владелец: 마이크로소프트 테크놀로지 라이센싱, 엘엘씨. Дата публикации: 2019-03-07.

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Номер патента: US20230357057A1. Автор: Jelena RADJENOVIC,Luis Miguel BAPTISTA PIRES,Giannis-Florjan NORRA,Nick DUINSLAEGER. Владелец: Fundació Institut Català De Recerca De L'aigua (Icra). Дата публикации: 2023-11-09.

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Номер патента: FR2847705A1. Автор: Norbert Fruhauf. Владелец: UNIVERSITAET STUTTGART. Дата публикации: 2004-05-28.

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Номер патента: EP2667376B1. Автор: Xi Chen,Wenhai Cui. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-07-19.

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Номер патента: DE102012101127A1. Автор: Christoph Orou. Владелец: ZF Lenksysteme GmbH. Дата публикации: 2013-08-14.

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Номер патента: WO2009134691A1. Автор: Milos Popovic,Jason S. Orcutt,Rajeev Ram,Judy L. Hoyt,Charles Holzwarth. Владелец: Massachusetts Institute of Technology. Дата публикации: 2009-11-05.

Cavitation enhanced treatment through local delivery

Номер патента: WO2006032031A1. Автор: Evan C. Unger,Reena Zutshi,Rachel LaBell. Владелец: Imarx Therapeutics, Inc.. Дата публикации: 2006-03-23.

Test Structure for Controlling the Incorporation of Semiconductor Alloys in Transistors Comprising High-K Metal Gate Electrode Structures

Номер патента: US20120001174A1. Автор: Kronholz Stephan,Wiatr Maciej,Giedigkeit Rainer. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-01-05.

Local Charge and Work Function Engineering on MOSFET

Номер патента: US20120003804A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

Semiconductor Device Comprising High-K Metal Gate Electrode Structures and Precision eFuses Formed in the Active Semiconductor Material

Номер патента: US20120001295A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-01-05.

GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT FIELD EFFECT TRANSISTORS

Номер патента: US20120001271A1. Автор: YAMADA Satoru,Chae Kyo-Suk,CHOI Young-Jin,Kim Wook-Je,HAN Sang-Yeon. Владелец: . Дата публикации: 2012-01-05.

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Номер патента: RU2192069C2. Автор: К.А. Валиев,А.А. Орликовский,А.Д. Кривоспицкий,А.А. Окшин,А.А. Горбацевич,Ю.Ф. Семин,С.С. Шмелев. Владелец: Физико-технологический институт РАН. Дата публикации: 2002-10-27.

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Номер патента: RU2237947C1. Автор: К.А. Валиев,А.А. Орликовский,А.Д. Кривоспицкий,А.А. Окшин. Владелец: Окшин Алексей Александрович. Дата публикации: 2004-10-10.

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Номер патента: RU2382122C2. Автор: Даниел Джеймс ТУИТЧЕН,Филип Морис МАРТИНОУ,Джеффри Алан СКАРСБРУК,Пол Мартин СПИР. Владелец: Элемент Сикс Лимитед. Дата публикации: 2010-02-20.

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Номер патента: US20120301990A1. Автор: Bryant Andres,Nowak Edward J.,Clark,ANDERSON Brent A.,JR. WILLIAM F.,Ellis-Monaghan John J.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-11-29.

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Номер патента: US20120032257A1. Автор: Tang Sanh D.,Ananthan Venkatesan. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-02-09.

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Номер патента: US20120146124A1. Автор: . Владелец: . Дата публикации: 2012-06-14.

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Номер патента: US20140038402A1. Автор: YANG Bin,Wei Andy C.,Tambwe Francis M.. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-02-06.

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Номер патента: US20120018810A1. Автор: . Владелец: TEXAS INSTRUMENTS INCORPORATED. Дата публикации: 2012-01-26.

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Номер патента: US20130307053A1. Автор: Ramkumar Krishnaswamy,Levy Sagy,Polishchuk Igor. Владелец: CYPRESS SEMICONDUCTOR CORPORATION. Дата публикации: 2013-11-21.

Dual work table

Номер патента: USD202357S. Автор: Douglas M. Sandefur. Владелец: . Дата публикации: 1965-09-21.

Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory

Номер патента: TW200601338A. Автор: Hang-Ting Lue,Yen-Hao Shih. Владелец: Macronix Int Co Ltd. Дата публикации: 2006-01-01.

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Номер патента: SU1530414A1. Автор: Игорь Павлович Филонов. Владелец: Белорусский Политехнический Институт. Дата публикации: 1989-12-23.

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Номер патента: CN201974394U. Автор: 李敏,李跃,张志鹏,郁松涛,马宏权,茅伟东. Владелец: NANJING FENGSHENG NEW ENERGY TECHNOLOGY Co Ltd. Дата публикации: 2011-09-14.

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Номер патента: CN203396153U. Автор: 王栋,罗琼香,桑宪辉,杜银林. Владелец: YANTAI MOON CO Ltd. Дата публикации: 2014-01-15.

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Номер патента: CN202377608U. Автор: 宋希万,陈诗歌. Владелец: NINGBO DEFENG POWER Tech CO Ltd. Дата публикации: 2012-08-15.

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Номер патента: CN206720683U. Автор: 徐亮,李永辉,张鹏飞,高亮,郭戈,任建峰,胡选革,吴站伟,郑枫川,都建国. Владелец: SHAANXI ALLLEESON CONSTRUCTION MACHINERY CO Ltd. Дата публикации: 2017-12-08.

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Номер патента: CN210089171U. Автор: 杨永安,李瑞申,朱轶群,杜启含. Владелец: Tianjin University of Commerce. Дата публикации: 2020-02-18.

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Номер патента: CN201885344U. Автор: 李科,于海涛,于昌勇,曹真方. Владелец: Shanghai Langte Construction Science & Technology Co ltd. Дата публикации: 2011-06-29.

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Номер патента: CN212133045U. Автор: 马腾飞,郭晨,卢海松. Владелец: Kaifeng Kaixing Air Separation Equipment Co ltd. Дата публикации: 2020-12-11.

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Номер патента: CN101858333A. Автор: 黄伟,李楼楼,赵振峰,吕亿明,王百,惠艳妮,郭方元,韩二涛. Владелец: China Petroleum and Natural Gas Co Ltd. Дата публикации: 2010-10-13.

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Номер патента: TWM299046U. Автор: Cheng-Hsiu Shih. Владелец: Shenq Fang Yuan Technology Co. Дата публикации: 2006-10-11.

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Номер патента: TW517614U. Автор: Jia-Shiu Juang. Владелец: Her Yei Electric Co Ltd. Дата публикации: 2003-01-11.

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Номер патента: US20120202114A1. Автор: DESCHAMPS Marc,Madray Sophie,Kerdranvat Stéphane. Владелец: . Дата публикации: 2012-08-09.

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Номер патента: US20130017679A1. Автор: Lenski Markus,Hempel Klaus,Schroeder Vivien,Metzger Joachim,Binder Robert. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-01-17.

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Номер патента: US20130020658A1. Автор: Wong Keith Kwong Hon,Guo Dechao,Han Shu-Jen,Yuan Jun. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-01-24.

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Номер патента: US20130168773A1. Автор: Hempel Klaus,Stephan Rolf,PRINDLE Christopher. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-07-04.

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Номер патента: JP2003308797A. Автор: Susumu Sakamoto,佐四郎 上村,Sashiro Kamimura,Junko Yotani,純子 余谷,進 阪本. Владелец: Noritake Co Ltd. Дата публикации: 2003-10-31.

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Номер патента: KR100431623B1. Автор: 이경남. Владелец: 삼성전자주식회사. Дата публикации: 2004-10-14.

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