Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same.

Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same

Номер патента: US09356129B2
Опубликовано: 31-05-2016
Автор(ы): Fabian Radulescu, Saptharishi Sriram
Принадлежит: Cree Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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