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Method of manufacturing semiconductor device having recess gate structure with varying recess width for increased channel length

Номер патента: US20070004145A1
Опубликовано: 04-01-2007
Автор(ы): CHANG Lee, Jong Kim, Se Won
Принадлежит: Hynix Semiconductor Inc
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Номер патента: US09741852B2. Автор: James Tsai,Shih-Hsien Huang,Tsang-Hsuan Wang. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-22.

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Номер патента: US09564357B2. Автор: Fang-I Chih,Yen-Chang Chao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-07.

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Номер патента: US11973130B2. Автор: Sotirios Athanasiou,Sébastien Daveau. Владелец: X Fab France SAS. Дата публикации: 2024-04-30.

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Номер патента: US11038014B2. Автор: Feng-Yi Chang,Fu-Che Lee,Ying-Chih Lin,Gang-Yi Lin,Yi-Ching Chang,Kai-Lou Huang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2021-06-15.

Semiconductor device and method for fabricating the same

Номер патента: US20200403082A1. Автор: Chi-Mao Hsu,Chia-Ming Kuo,Tsuo-Wen Lu,Fu-Jung Chuang,Po-Jen Chuang. Владелец: United Microelectronics Corp. Дата публикации: 2020-12-24.

Method of forming semiconductor device

Номер патента: US20210265462A1. Автор: Feng-Yi Chang,Fu-Che Lee,Ying-Chih Lin,Gang-Yi Lin,Yi-Ching Chang,Kai-Lou Huang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2021-08-26.

Semiconductor device and method of forming the same

Номер патента: US20200083325A1. Автор: Feng-Yi Chang,Fu-Che Lee,Ying-Chih Lin,Gang-Yi Lin,Yi-Ching Chang,Kai-Lou Huang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2020-03-12.

Super-junction power device having adjustable resistors connected in parallel between gates and sources and manufacturing method thereof

Номер патента: US20240178275A1. Автор: WEI Hu. Владелец: Chongqing Alpha And Omega Semiconductor Ltd. Дата публикации: 2024-05-30.

The manufacture method of manufacturing silicon carbide semiconductor device

Номер патента: CN104704611B. Автор: 前山雄介,渡部善之,中村俊,中村俊一. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-04-05.

Silicon carbide semiconductor device, power converter, and method of manufacturing silicon carbide semiconductor device

Номер патента: US11984492B2. Автор: Yasuhiro Kagawa,Yuji Ebiike. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-05-14.

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Номер патента: US20170271486A1. Автор: Komatsu Takuya,Imai Fumikazu. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2017-09-21.

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Номер патента: US20190378921A1. Автор: Sakai Yoshiyuki,UTSUMI Makoto. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2019-12-12.

Method of manufacturing gate of semiconductor device

Номер патента: KR100223942B1. Автор: 하재희. Владелец: 엘지반도체주식회사. Дата публикации: 1999-10-15.

Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

Номер патента: TW200607077A. Автор: Minoru Moriwaki. Владелец: Seiko Epson Corp. Дата публикации: 2006-02-16.

Semiconductor device and formation thereof

Номер патента: US09666438B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Method of Forming Gate Insulating Film, Semiconductor Device and Computer Recording Medium

Номер патента: US20070290247A1. Автор: Yoshihiro Sato,Toshio Nakanishi,Yutaka Fujino,Tatsuo Nishita,Shuuichi Ishizuka. Владелец: Tokyo Electron Ltd. Дата публикации: 2007-12-20.

Method of forming gate insulation film, semiconductor device, and computer recording medium

Номер патента: US20100130023A1. Автор: Yoshihiro Sato,Toshio Nakanishi,Yutaka Fujino,Tatsuo Nishita,Shuuichi Ishizuka. Владелец: Tokyo Electron Ltd. Дата публикации: 2010-05-27.

Method of manufacturing a non-volatile memory device having a vertical structure

Номер патента: US20130089974A1. Автор: Ki-Hyun Hwang,Sung-Hae Lee,Jin-Gyun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-04-11.

Method of manufacturing a semiconductor integrated circuit device having a capacitor

Номер патента: US6638811B2. Автор: Satoru Yamada,Masayuki Suzuki,Masayoshi Saito,Toshihiro Sekiguchi,Yoshitaka Nakamura,Hideo Aoki,Hidekazu Goto,Naoki Fukuda,Yoshitaka Tadaki,Keizo Kawakita,Takuya Fukuda,Isamu Asano,Tsuyoshi Tamaru,Masayoshi Hirasawa. Владелец: HITACHI LTD. Дата публикации: 2003-10-28.

Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

Номер патента: KR100698000B1. Автор: 미노루 모리와키. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2007-03-23.

Semiconductor devices

Номер патента: US20190237414A1. Автор: Hyung-Gil Baek,Yun-rae Cho,Sun-Dae KIM,Nam-Gyu BAEK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-08-01.

Method of manufacturing capacitor of semiconductor device including contacts

Номер патента: KR100301050B1. Автор: 신지철,이세형. Владелец: 윤종용. Дата публикации: 2002-06-20.

Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

Номер патента: US09825145B2. Автор: Haruo Nakazawa,Yasukazu Seki,Kenichi Iguchi,Koh Yoshikawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-11-21.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09941362B2. Автор: Masayuki Miyazaki,Hidenao Kuribayashi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-04-10.

Method of manufacturing a power semiconductor device having source region and body contact region formed between trench-type gate electrodes

Номер патента: US11855184B2. Автор: Soo Chang Kang,Seong Jo HONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2023-12-26.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180090320A1. Автор: Mitsuo Okamoto,Takashi Tsutsumi,Kenji Fukuda,Masaki Miyazato,Youichi Makifuchi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-29.

Method of Manufacturing a Power Semiconductor Device

Номер патента: US20190157401A1. Автор: Hans-Joachim Schulze,Christoph Weiss,Daniel Schloegl,Matthias Kuenle. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-05-23.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2667247A1. Автор: Takeyoshi Masuda,Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-05-08.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20230154999A1. Автор: Hidemoto Tomita. Владелец: Mirise Technologies Corp. Дата публикации: 2023-05-18.

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Номер патента: US20200144371A1. Автор: Takeshi Tawara,Mina OHSE. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-07.

Method of manufacturing nitride semiconductor device

Номер патента: US20170092493A1. Автор: Tohru Oka,Takahiro Fujii,Masayoshi Kosaki,Takaki Niwa. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2017-03-30.

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Номер патента: US20210234005A1. Автор: KAWADA Yasuyuki. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2021-07-29.

Method of forming junction of semiconductor device

Номер патента: US20090111233A1. Автор: Dong Ho Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-04-30.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09793121B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-17.

Method of forming zro2 thin film using plasma enhanced atomic layer deposition and method of manufacturing capacitor of semiconductor memory device having the thin film

Номер патента: KR100640654B1. Автор: 박정민,송민우,원석준,권대진,김원홍. Владелец: 삼성전자주식회사. Дата публикации: 2006-11-01.

Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device

Номер патента: US09691616B2. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-06-27.

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Номер патента: US20240339323A1. Автор: Hidenori Satou,Atsushi Yoshimoto,Takahito Kojima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-10.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20240234496A1. Автор: Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-11.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09613809B2. Автор: Taku Horii,Masaki Kijima. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-04-04.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240154031A1. Автор: Masaki Miyazato,Yohei Kagoyama,Mina OHSE. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-05-09.

Method of fabricating a metal gate semiconductor device

Номер патента: US20130260547A1. Автор: Ming Zhu,Bao-Ru Young,Hak-Lay Chuang,Sheng-Chen Chung,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-03.

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Номер патента: US11114560B2. Автор: Keiji Okumura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-09-07.

Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole

Номер патента: US09966463B2. Автор: Naoya Okamoto,Shirou Ozaki. Владелец: Fujitsu Ltd. Дата публикации: 2018-05-08.

Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device

Номер патента: US09825170B2. Автор: Till Schloesser,Franz Hirler,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-21.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US12094942B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09887270B2. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-06.

Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole

Номер патента: US09660065B2. Автор: Naoya Okamoto,Shirou Ozaki. Владелец: Fujitsu Ltd. Дата публикации: 2017-05-23.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210028010A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-28.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210343524A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-04.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160314973A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-10-27.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210167173A1. Автор: Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-03.

Wiring structure and method of forming the same, and semiconductor device including the wiring structure

Номер патента: US09716043B2. Автор: Jeong-Hoon Ahn,Sang-Chul Lee,In-Hwan Kim,Jun-Jung Kim,Joon-Nyung Lee,Yeon-Joo Kim,Jin-Hyeung PARK,Kyoung-Pil Park,Hyo-Seon LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-25.

Method of fabricating hybrid impact-ionization semiconductor device

Номер патента: US20110227161A1. Автор: Ming Zhu,Lee-Wee Teo,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-09-22.

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Номер патента: US20210175369A1. Автор: Takafumi Uchida,Takahito Kojima,Yuichi HASHIZUME,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-10.

Method of detecting failure of a semiconductor device

Номер патента: US20190385918A1. Автор: ZHAN Zhan,Ji-Young Choi,Ju-Hyun Kim,Hwa-Sung Rhee,Sung-Gun Kang,Min-Seob KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-19.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200279947A1. Автор: Fumitoshi Yamamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-09-03.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160240380A1. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-08-18.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20190157398A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-05-23.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20220336219A1. Автор: Daisuke Taniguchi,Toshikazu Tanioka,Junya MIWA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-10-20.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US10236372B2. Автор: Keiji Okumura,Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-03-19.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230253491A1. Автор: Manabu Takei,Shinsuke Harada,Masakazu Baba. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200303541A1. Автор: Keiji Okumura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-09-24.

Butted Contacts And Methods Of Fabricating The Same In Semiconductor Devices

Номер патента: US20220359686A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220302251A1. Автор: Masanobu IWAYA,Kensuke HATA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-09-22.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200343345A1. Автор: Makoto Utsumi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-10-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230326960A1. Автор: Keishirou KUMADA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-10-12.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11600702B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-03-07.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180138273A1. Автор: Takashi Tsuji. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-17.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240047532A1. Автор: Shingo Hayashi,Yasuyuki Hoshi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-08.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210074863A1. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-03-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210111250A1. Автор: Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-04-15.

Methods of reducing parasitic capacitance in semiconductor devices

Номер патента: US12009263B2. Автор: Yen-Ming Chen,Feng-Cheng Yang,Sai-Hooi Yeong,Kai-Hsuan LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180301536A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-10-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220013641A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-01-13.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2669949A1. Автор: Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-06-05.

Semiconductor device and a method of manufacture of a semiconductor device

Номер патента: US20220045222A1. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2022-02-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20170271468A1. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240021737A1. Автор: Yuichi HASHIZUME. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-01-18.

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Номер патента: US20230238319A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-27.

A semiconductor device and a method of manufacture of a semiconductor device

Номер патента: EP3951884A1. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2022-02-09.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11942517B2. Автор: Takeyoshi Masuda. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-03-26.

Semiconductor device and a method of manufacture of a semiconductor device

Номер патента: US11984515B2. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2024-05-14.

Contact features and methods of fabricating the same in semiconductor devices

Номер патента: US12021025B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

Process of manufacturing trench gate semiconductor device

Номер патента: EP2020681A3. Автор: Richard K. Williams,Wayne B. Grabowski. Владелец: Advanced Analogic Technologies Inc. Дата публикации: 2009-06-10.

Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures

Номер патента: WO2015017117A1. Автор: Roy E. Meade,Sumeet C. Pandey. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2015-02-05.

Method of forming metal contact for semiconductor device

Номер патента: US11715763B2. Автор: Sung-Li Wang,Yasutoshi Okuno,Mrunal A. Khaderbad. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-01.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US12002756B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Methods of forming conductive elements of semiconductor devices and of forming memory cells

Номер патента: US09865812B2. Автор: Nishant Sinha,Scott E. Sills,Sanh D. Tang,Whitney L. West,Rob B. Goodwin. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

Semiconductor devices with ion-sensitive field effect transistor

Номер патента: US20210055256A1. Автор: Eng Huat Toh,Shyue Seng Tan,Xinshu CAI. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2021-02-25.

Method of manufacturing III-nitride semiconductor devices

Номер патента: US6486050B1. Автор: Ching-ting Lee. Владелец: Opto Tech Corp. Дата публикации: 2002-11-26.

Method of forming contacts to a semiconductor device

Номер патента: CA2011235A1. Автор: Kathleen A. Perry,San-Mei Ku. Владелец: International Business Machines Corp. Дата публикации: 1990-11-15.

Method of forming metal line in semiconductor device

Номер патента: US7790609B2. Автор: Ji-Ho Hong. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-09-07.

Methods of forming metal wiring of semiconductor devices

Номер патента: US20040132283A1. Автор: Dong-Ki Jeon,Jae-Won Han. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-07-08.

Method of forming wiring layer of semiconductor device

Номер патента: US20090227101A1. Автор: Sun-jung Lee,Mu-Kyeng Jung,Ki-Chul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-10.

Low cost method of fabricating shallow junction, Schottky semiconductor devices

Номер патента: US5635414A. Автор: Jun Wu,Joseph Chan,Gregory Zakaluk,Dennis Garbis,Willem Einthoven,Jack Eng,John Amato. Владелец: Individual. Дата публикации: 1997-06-03.

Method of Fabricating Landing Plug in Semiconductor Device

Номер патента: US20100330801A1. Автор: Kyoung Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-30.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11469303B2. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-10-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210217852A1. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-07-15.

Fabrication method of layer structure for mounting semiconductor device

Номер патента: US20180233442A1. Автор: Hung-Chi Chen,Fang-Lin Tsai,Yi-Feng Chang,Yi-Min Fu,Cheng-Jen Liu. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2018-08-16.

Method of rinsing and drying semiconductor device and method of manufacturing semiconductor device using the same

Номер патента: US20150287590A1. Автор: Hyosan Lee,Yongsun Ko,Kwangsu Kim,Seokhoon Kim,Kuntack Lee,Yong-jhin Cho,Jihoon Jeong,Jung-min Oh,ChangSup Mun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-08.

Semiconductor device and manufacturing method thereof

Номер патента: US20010049191A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2001-12-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20030124811A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2003-07-03.

Joining electrode, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US8884439B2. Автор: Kenichi Aoyagi. Владелец: Sony Corp. Дата публикации: 2014-11-11.

Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure

Номер патента: US09728397B1. Автор: Hsu Ting,Chun-Wei Yu,Chueh-Yang Liu,Yu-Ren Wang. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-08.

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240274434A1. Автор: Tsubasa HONKE,Takaya MIYASE,Taro Enokizono,Hiroki Nishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-08-15.

Semiconductor device manufacturing method

Номер патента: RU2680989C1. Автор: Гасан Абакарович Мустафаев,Асламбек Идрисович Хасанов,Руслан Азаевич Кутуев,Арслан Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет". Дата публикации: 2019-03-01.

Semiconductor device and method for manufacturing the same

Номер патента: US4425700A. Автор: Nobuo Sasaki,Motoo Nakano. Владелец: Fujitsu Ltd. Дата публикации: 1984-01-17.

Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same

Номер патента: US20200075398A1. Автор: Gihwan KIM,Hyo-Jung Kim,Geunwon LIM,Miso SHIN,Chungki MIN,Sanghyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-05.

Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same

Номер патента: US20220139766A1. Автор: Gihwan KIM,Hyo-Jung Kim,Geunwon LIM,Miso SHIN,Chungki MIN,Sanghyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-05.

Connector formation methods and packaged semiconductor devices

Номер патента: US09691723B2. Автор: Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng,Hao-Cheng Hou,Hai-Ming Chen,Hung-Jen Lin,Chun-Chih Chuang,Ming-Che Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-27.

Method for via formation in a semiconductor device

Номер патента: US20120302062A1. Автор: Yi Nan Chen,Hsien Wen Liu,Chih Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2012-11-29.

Methods of forming patterns of semiconductor devices

Номер патента: US09779941B2. Автор: Seok-Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-03.

Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containning polymer of silicon, oxygen, and hydrogen

Номер патента: US20030077896A1. Автор: Masayoshi Saito,Masayuki Kojima,Hiroyuki Maruyama,Takuya Fukuda,Hiroyuki Uchiyama,Katsuhiko Hotta,Masayoshi Hirasawa. Владелец: Masayoshi Hirasawa. Дата публикации: 2003-04-24.

Connector Formation Methods and Packaged Semiconductor Devices

Номер патента: US20220359436A1. Автор: Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng,Hao-Cheng Hou,Hai-Ming Chen,Hung-Jen Lin,Chun-Chih Chuang,Ming-Che Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Connector Formation Methods and Packaged Semiconductor Devices

Номер патента: US20170352632A1. Автор: Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng,Hao-Cheng Hou,Hai-Ming Chen,Hung-Jen Lin,Chun-Chih Chuang,Ming-Che Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-07.

Capacitor of semiconductor device, method of manufacturing the same and memory device having the same

Номер патента: KR101001741B1. Автор: 이정현,서범석. Владелец: 삼성전자주식회사. Дата публикации: 2010-12-15.

MICRO-PATTERN FORMING METHOD, CAPACITOR AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Номер патента: US20200152638A1. Автор: KIM Jong-hyuk,Kim Jae-hee,HA Soon-mok,HWANG Chan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-05-14.

MICRO-PATTERN FORMING METHOD, CAPACITOR AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Номер патента: US20180175043A1. Автор: KIM Jong-hyuk,Kim Jae-hee,HA Soon-mok,HWANG Chan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2018-06-21.

Manufacturing Method of Manufacturing Device and Semiconductor Device

Номер патента: KR20200014359A. Автор: 토루 마에다,토모노리 나카무라,테츠오 타카노. Владелец: 가부시키가이샤 신가와. Дата публикации: 2020-02-10.

Method of forming hemispherical grain for semiconductor devices

Номер патента: TW434656B. Автор: Chan-Sik Park,Yun-Young Kwon,Jang-Hyeok Lee,Se-Hyoung Ryu,Eung-Yong Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2001-05-16.

Method for making semiconductor device

Номер патента: RU2674413C1. Автор: Гасан Абакарович Мустафаев,Асламбек Идрисович Хасанов,Руслан Азаевич Кутуев,Арслан Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет". Дата публикации: 2018-12-07.

Non-volatile semiconductor devices and methods of manufacturing non-volatile semiconductor devices

Номер патента: US20110233653A1. Автор: Hak-sun Lee,Kyoung-sub Shin. Владелец: Lee Hak-Sun. Дата публикации: 2011-09-29.

Method of manufacturing capacitor of semiconductor device by two-step thermal treatment

Номер патента: KR20060084988A. Автор: 송민우,원석준,정용국,권대진,김원홍. Владелец: 삼성전자주식회사. Дата публикации: 2006-07-26.

Method of manufacturing capacitor of semiconductor device

Номер патента: JP2001237399A. Автор: Ki-Jung Lee,洪 善 梁,起 正 李,Kouzen Yana. Владелец: Hynix Semiconductor Inc. Дата публикации: 2001-08-31.

Method of manufacturing and inspecting semiconductor devices

Номер патента: CA2126292A1. Автор: Takashi Iwasaki,Yasuhiro Iguchi,Nobuhisa Tanaka,Shun-Ichi Yoneyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1994-12-24.

Method of producing a complementary-type semiconductor device

Номер патента: US5036019A. Автор: Yasushi Higuchi,Hiroyuki Yamane. Владелец: NipponDenso Co Ltd. Дата публикации: 1991-07-30.

Manufacturing method of semiconductor device

Номер патента: US09793382B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Hsien Lin,Chun-Lung Chen,Chia-Lin Lu. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-17.

Semiconductor device and manufacturing method thereof

Номер патента: US09640484B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Hsien Lin,Chun-Lung Chen,Chia-Lin Lu. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-02.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20030062575A1. Автор: Masakatsu Tsuchiaki. Владелец: Toshiba Corp. Дата публикации: 2003-04-03.

Method of manufacturing nonvolatile memory device

Номер патента: US20100164019A1. Автор: Heedon Jeong. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-07-01.

Semiconductor device with funnel shape spacer and methods of forming the same

Номер патента: US12051628B2. Автор: Yen-Ming Chen,Yen-Ting Chen,Wei-Yang Lee,Fu-Kai Yang,Cheng-Yu Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Semiconductor device with funnel shape spacer and methods of forming the same

Номер патента: US20240363426A1. Автор: Yen-Ming Chen,Yen-Ting Chen,Wei-Yang Lee,Fu-Kai Yang,Cheng-Yu Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device and manufacturing method thereof

Номер патента: US20230343872A1. Автор: Chun-Sheng Liang,Shih-Hsun Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Fabrication method of trenched metal-oxide-semiconductor device

Номер патента: US20110230025A1. Автор: Chun Ying Yeh. Владелец: Niko Semiconductor Co Ltd. Дата публикации: 2011-09-22.

Fabrication method of trenched metal-oxide-semiconductor device

Номер патента: US20100151642A1. Автор: Chun Ying Yeh. Владелец: Niko Semiconductor Co Ltd. Дата публикации: 2010-06-17.

Method of fabricating semiconductor device

Номер патента: US6168996B1. Автор: Satoshi Kudo,Masayoshi Kobayashi,Yasuo Imai,Takashi Shigematsu,Yoshito Nakazawa,Akihiro Ohnishi,Kentaro Oishi,Sakae Kubo,Sumito Numazawa,Kozo Uesawa. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2001-01-02.

Semiconductor device and method for fabricating the same

Номер патента: US10211313B2. Автор: Shih-Hung Tsai,Yu-Ting Tseng,Po-Kuang Hsieh,Kuan-Hao TSENG,Cheng-Ping Kuo. Владелец: United Microelectronics Corp. Дата публикации: 2019-02-19.

Method for fabricating semiconductor device

Номер патента: US20210050253A1. Автор: Li-Han Chen,Wei-Chuan Tsai,Yen-Tsai Yi,Jin-Yan Chiou,Hsiang-Wen Ke. Владелец: United Microelectronics Corp. Дата публикации: 2021-02-18.

Semiconductor device and method for fabricating the same

Номер патента: US09899522B1. Автор: Chun-Hsien Lin,An-Chi Liu. Владелец: United Microelectronics Corp. Дата публикации: 2018-02-20.

Trench MOSFET with depleted gate shield and method of manufacture

Номер патента: US10832915B2. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2020-11-10.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20190115218A1. Автор: Patrick M. Shea. Владелец: Renesas Electronics America Inc. Дата публикации: 2019-04-18.

Methods of Forming Contact Features in Semiconductor Devices

Номер патента: US20210280426A1. Автор: Mei-Yun Wang,Fu-Kai Yang,Chen-Ming Lee,Chen-Hung Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-09.

Method for fabricating semiconductor device with bulb-shaped recess gate

Номер патента: US20070148980A1. Автор: Jun-hee Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-06-28.

Method of forming of a semiconductor film, method of manufacture of a semiconductor device and a semiconductor device

Номер патента: US20110266550A1. Автор: Munehiro Tada,Krishna Saraswat. Владелец: Leland Stanford Junior University. Дата публикации: 2011-11-03.

Method of manufacturing high-integrated semiconductor device and semiconductor device manufactured using the same

Номер патента: TW201007928A. Автор: Young-Man Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-02-16.

Method of manufacturing high-integrated semiconductor device and semiconductor device manufactured using the same

Номер патента: US8119509B2. Автор: Young Man Cho. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-02-21.

Semiconductor device and method of forming the same

Номер патента: US20200135477A1. Автор: Chun-Sheng Liang,Shu-Hui Wang,Li-Jung LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-30.

Method of manufacturing a semiconductor integrated circuit device having a trench

Номер патента: US20050260820A1. Автор: Kouzou Watanabe,Norio Suzuki,Norio Ishitsuka,Kenji Kanamitsu. Владелец: Kenji Kanamitsu. Дата публикации: 2005-11-24.

Method of manufacturing a nonvolatile semiconductor memory device having a gate stack

Номер патента: US20090068808A1. Автор: Jung-hyun Lee,Hyun-Sang Hwang,Chung-woo Kim,Soo-doo Chae,Moon-kyung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-03-12.

Method of manufacturing a semiconductor integrated circuit device having a trench

Номер патента: US6967141B2. Автор: Kouzou Watanabe,Norio Suzuki,Norio Ishitsuka,Kenji Kanamitsu. Владелец: Renesas Technology Corp. Дата публикации: 2005-11-22.

Method of manufacturing a semiconductor integrated circuit device having a trench

Номер патента: US20050014340A1. Автор: Kouzou Watanabe,Norio Suzuki,Norio Ishitsuka,Kenji Kanamitsu. Владелец: Kenji Kanamitsu. Дата публикации: 2005-01-20.

SEMICONDUCTOR DEVICE HAVING CONTACT PLUG CONNECTED TO GATE STRUCTURE ON PMOS REGION

Номер патента: US20210125927A1. Автор: Hsu Chi-Mao,Lu Tsuo-Wen,Wu Tsung-Hsun,Liang Shih-Hao,Chen Shih-Cheng,Ho Li-Hsuan,Chuang Po-Jen. Владелец: . Дата публикации: 2021-04-29.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20210328025A1. Автор: Ohse Naoyuki,Kojima Takahito. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2021-10-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: JP6500912B2. Автор: 直樹 熊谷,卓巳 藤本,熊谷　直樹. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-04-17.

Method of manufacturing transistor of semiconductor device

Номер патента: KR100224785B1. Автор: 박보현. Владелец: 현대전자산업주식회사. Дата публикации: 1999-10-15.

Method for fabricating semiconductor device

Номер патента: US11227769B2. Автор: Yu-Jen Liu,Chun-Jung Tang. Владелец: United Microelectronics Corp. Дата публикации: 2022-01-18.

Method of forming GE silicide layer, semiconductor device comprising GE silicide layer and method of manufacturing the same

Номер патента: KR101194843B1. Автор: 이내인,양현덕,이화성,전중석,문창욱,웨이웨이 첸. Владелец: 삼성전자주식회사. Дата публикации: 2012-10-25.

Method of manufacturing high-voltage semiconductor device and low-voltage semiconductor device

Номер патента: US7910466B2. Автор: Choul Joo Ko. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2011-03-22.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device

Номер патента: US09640618B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-05-02.

Method of making a charge compensation semiconductor device using direct bonding and corresponding device

Номер патента: EP1119871A1. Автор: Raymond J. Grover. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-08-01.

Silicon carbide semiconductor device, silicon carbide semiconductor assembly, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200152594A1. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-14.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09978598B2. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-22.

Methods of fabricating isolation regions of semiconductor devices and structures thereof

Номер патента: US09653543B2. Автор: Roland Hampp,Armin Tilke,Marcus Culmsee,Chris Stapelmann,Bee Kim Hong. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-05-16.

Semiconductor device with a contact plug adjacent a gate structure

Номер патента: US12062660B2. Автор: Jong-Chul Park,Sang-Hyun Lee,In-Keun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-13.

Method of manufacturing conductors and semiconductor device which includes conductors

Номер патента: US20180151552A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-31.

Method of manufacturing conductors for semiconductor device

Номер патента: US20230335545A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device.

Номер патента: US20160254356A1. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2016-09-01.

Method and system of manufacturing conductors and semiconductor device which includes conductors

Номер патента: US20190371784A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-12-05.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: EP4375400A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-29.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: US20240178324A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-30.

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods

Номер патента: US09748304B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Jeng-Shyan Lin,Shu-Ting Tsai,U-Ting CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device

Номер патента: US20030213426A1. Автор: Eiji Natori,Koichi Furuyama,Yuzo Tasaki. Владелец: Seiko Epson Corp. Дата публикации: 2003-11-20.

Method of manufacturing stacked-type semiconductor device

Номер патента: US20090191666A1. Автор: Souu Kumagai. Владелец: Disco Corp. Дата публикации: 2009-07-30.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages

Номер патента: US09773724B2. Автор: Szu Wei Lu,Jing-Cheng Lin,Po-Hao Tsai,Ying-Ching Shih,I-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Exposure methods using e-beams and methods of manufacturing masks and semiconductor devices therefrom

Номер патента: US09671686B2. Автор: Sang-Hee Lee,Jin Choi,In-kyun Shin,Byoung-Sup Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Method of manufacturing multi-die semiconductor devices

Номер патента: EP4016614A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-06-22.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US7989231B2. Автор: Yuuichi Takeuchi,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-08-02.

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Номер патента: US6787371B2. Автор: Tatsuo Sawasaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-09-07.

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Номер патента: US09865578B2. Автор: Wei Zhou,Sony Varghese,Aibin Yu,Zhaohui Ma,Jonathan S. Hacker,Bret K. Street,Shijian Luo. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

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Номер патента: US09865502B2. Автор: Kenro Nakamura. Владелец: Toshiba Memory Corp. Дата публикации: 2018-01-09.

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Номер патента: US20240249955A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-07-25.

Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation

Номер патента: US20090029521A1. Автор: Dong Sun Sheen,Sang Tae Ahn,Seok Pyo Song,Hyeon Ju An. Владелец: Individual. Дата публикации: 2009-01-29.

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Номер патента: US8633087B2. Автор: Hideki Matsubara,Kuniaki Ishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-01-21.

Method of making a plurality of semiconductor devices

Номер патента: US09859184B2. Автор: Hans-Martin Ritter,Frank Burmeister. Владелец: Nexperia BV. Дата публикации: 2018-01-02.

Methods of reinforcing integrated circuitry of semiconductor devices and related semiconductor devices and packages

Номер патента: US20190393110A1. Автор: AJAY Kumar,John House,Hyunsoo Yeom. Владелец: Microchip Technology Inc. Дата публикации: 2019-12-26.

Method of separating a wafer of semiconductor devices

Номер патента: US09608016B2. Автор: Stefano Schiaffino,Grigoriy Basin,Jipu Lei,Alexander H. Nickel. Владелец: Koninklijke Philips NV. Дата публикации: 2017-03-28.

Group-iii nitride semiconductor device, epitaxial substrate, and method of fabricating group-iii nitride semiconductor device

Номер патента: US20120299010A1. Автор: Masaki Ueno,Takao Nakamura,Takashi Kyono,Katsushi Akita,Yusuke Yoshizumi,Takamichi Sumitomo,Yohei Enya. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-11-29.

Board for mounting BGA semiconductor chip thereon, semiconductor device, and methods of fabricating such board and semiconductor device

Номер патента: US20050156326A1. Автор: Toshihide Ito. Владелец: NEC Toppan Circuit Solutions Inc. Дата публикации: 2005-07-21.

Method of forming buried wiring in semiconductor device

Номер патента: US20050186795A1. Автор: Kazuhide Abe. Владелец: Individual. Дата публикации: 2005-08-25.

Method of manufacturing 3-D semiconductor device

Номер патента: US10636699B2. Автор: Zongliang Huo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-04-28.

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Номер патента: US11948806B2. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-04-02.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4125121A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-02-01.

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Номер патента: EP1784857A1. Автор: Robertus A. M. Wolters,Robert Lander,Jacob C. Hooker. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2007-05-16.

Method of manufacturing resin-encapsulated semiconductor device package using photoresist or pre-peg lead frame dam bars

Номер патента: US5258331A. Автор: Takashi Nakashima,Kenji Masumoto. Владелец: Texas Instruments Inc. Дата публикации: 1993-11-02.

Method of manufacturing interconnection and semiconductor device

Номер патента: US8940628B2. Автор: Tadashi Sakai,Yuichi Yamazaki. Владелец: Toshiba Corp. Дата публикации: 2015-01-27.

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Номер патента: US6025640A. Автор: Hiroshi Yagi,Masato Sasaki,Kazuyoshi Togashi. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2000-02-15.

Method of manufacturing a multilayer semiconductor device

Номер патента: US4596604A. Автор: Shin-ichi Ogawa,Yasuaki Terui,Shigenobu Akiyama. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1986-06-24.

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Номер патента: US20160268163A1. Автор: Kenro Nakamura. Владелец: Toshiba Corp. Дата публикации: 2016-09-15.

Method of fabrication of adjacent coplanar semiconductor devices

Номер патента: US5376229A. Автор: Steven D. Lester,Jeffrey N. Miller,Danny E. Mars. Владелец: Hewlett Packard Co. Дата публикации: 1994-12-27.

Method of forming beam leads on semiconductor devices and integrated circuits

Номер патента: US3653999A. Автор: Clyde Rhea Fuller. Владелец: Texas Instruments Inc. Дата публикации: 1972-04-04.

Method of forming conductive layer and semiconductor device

Номер патента: US20120189781A1. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-07-26.

Method of forming contacts for a semiconductor device

Номер патента: US20120094485A1. Автор: Shih-Chang Chen,Huan-Just Lin,Tsai-Chun Li,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-04-19.

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Номер патента: US20050282363A1. Автор: Chang-jin Kang,Kyeong-koo Chi,Cheol-kyu Lee,Keun-Hee Bai. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-12-22.

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Номер патента: US8273656B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-09-25.

Methods of making passivating layers for semiconductor devices

Номер патента: GB1532456A. Автор: . Владелец: Sony Corp. Дата публикации: 1978-11-15.

Method of producing epoxy resin encapsulated semiconductor device

Номер патента: MY112215A. Автор: ITO Hideo,MINAMI Katsunori. Владелец: Sumitomo Bakelite Co. Дата публикации: 2001-04-30.

Method of forming thin film of semiconductor device

Номер патента: US9564286B2. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2017-02-07.

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Номер патента: US11854976B2. Автор: Seung Young Lee,Sanghoon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-26.

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Номер патента: US20160049291A1. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2016-02-18.

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Номер патента: US20120040527A1. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-02-16.

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Номер патента: US8173542B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-05-08.

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Номер патента: US8193088B2. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-05.

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Номер патента: US7682928B2. Автор: Myung IL Kang. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2010-03-23.

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Номер патента: US6903020B2. Автор: Kazuhide Abe. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-06-07.

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Номер патента: US20230107346A1. Автор: Hyunjun Kim,Yukyung Shin,Cheoljin Cho,Changhwa JUNG,Jongbeom SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

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Номер патента: US20170047243A1. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunjun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-16.

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Номер патента: US09773890B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Lung Chen,Chia-Lin Lu,Wei-Hao Huang. Владелец: United Microelectronics Corp. Дата публикации: 2017-09-26.

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Номер патента: US10903352B2. Автор: Katsunori Ueno,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-01-26.

Semiconductor device structures with doped elements and methods of formation

Номер патента: US09773677B2. Автор: Shyam Surthi. Владелец: Micron Technology Inc. Дата публикации: 2017-09-26.

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Номер патента: US20190237547A1. Автор: Koichi Murata,Takeshi Tawara,Hidekazu Tsuchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-08-01.

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Номер патента: US09893162B2. Автор: Takumi Fujimoto,Yoshiyuki Sakai,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-13.

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Номер патента: US09716168B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-07-25.

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Номер патента: US11742392B2. Автор: Shingo Hayashi,Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-29.

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Номер патента: US20190148216A1. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunju BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-16.

Method of fabricating high voltage semiconductor device

Номер патента: US6180471B1. Автор: Gary Hong,Peter Chang,Joe Ko. Владелец: United Semiconductor Corp. Дата публикации: 2001-01-30.

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Номер патента: US09698059B2. Автор: Chia-Fu Hsu,Tian Choy Gan,Chu-Yun Hsiao. Владелец: United Microelectronics Corp. Дата публикации: 2017-07-04.

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Номер патента: US20190157392A1. Автор: Chih-Wei Lin,Tsung-Han Lin,Chao-Wei Wu,Yen-Kai CHEN. Владелец: Vanguard International Semiconductor Corp. Дата публикации: 2019-05-23.

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Номер патента: US20220157958A1. Автор: Jau-Yan Lin. Владелец: Advanced Power Electronics Corp USA. Дата публикации: 2022-05-19.

Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

Номер патента: US09711633B2. Автор: Sten Heikman,Scott T. Sheppard,Yifeng Wu,Matthew Jacob-Mitos,R. Peter Smith. Владелец: Cree Inc. Дата публикации: 2017-07-18.

Fabricating method of lateral-diffused metal oxide semiconductor device

Номер патента: US09780171B2. Автор: Ming-Shing Chen,Wei-Ting Wu,Ming-Hui Chang,Chao-Chun Ning. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

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Номер патента: US20190157448A1. Автор: Katsunori Ueno,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-05-23.

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Номер патента: US20240162334A1. Автор: Kilian ONG,Aryadeep Mrinal,Dnyanesh Havaldar. Владелец: Nexperia BV. Дата публикации: 2024-05-16.

Gate spacers and methods of forming the same in semiconductor devices

Номер патента: US20240266224A1. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Vertical semiconductor devices and methods of manufacturing the same

Номер патента: US20200312878A1. Автор: Yong-Seok Kim,Tae-Young Kim,Sung-Il Chang,Su-Jin Ahn,Jae-Sung SIM,Jun-Hee Lim,Ji-Yeong HWANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-10-01.

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Номер патента: US20130237043A1. Автор: Yoichiro Tarui,Noriaki Tsuchiya. Владелец: Mitsubishi Electric Corp. Дата публикации: 2013-09-12.

Thin film transistor, method of manufacturing the same, and display device having thin film transistor

Номер патента: US8964141B2. Автор: Ji-Yong Park,Kyung-Min Park,Jin-Suk Park,Sung-In Ro,Seong-Yeun Kang. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-02-24.

Method of manufacturing a resurf semiconductor device, and a semiconductor device manufactured by such a method

Номер патента: WO1997023901A1. Автор: Adrianus Willem Ludikhuize. Владелец: Philips Norden Ab. Дата публикации: 1997-07-03.

Metal oxide semiconductor device with improved threshold voltage and drain junction breakdown voltage and method for fabricating same

Номер патента: US20080023776A1. Автор: Allan Laser. Владелец: Micrel Inc. Дата публикации: 2008-01-31.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287598A1. Автор: Takayuki SHIMATOU. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

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Номер патента: US20230246076A1. Автор: Shinsuke Harada,Masakazu Baba. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-03.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US10665681B2. Автор: Koichi Murata,Takeshi Tawara,Hidekazu Tsuchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-26.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287617A1. Автор: Naoko Kodama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

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Номер патента: US20240063269A1. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-22.

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Номер патента: US20180026133A1. Автор: Till Schloesser,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-25.

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Номер патента: US20240079494A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-07.

A semiconductor device and a method of manufacturing of a semiconductor device

Номер патента: EP4333074A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-06.

Semiconductor device including a superlattice and replacement metal gate structure and related methods

Номер патента: US09722046B2. Автор: Hideki Takeuchi,Robert J. Mears,Tsu-Jae King Liu. Владелец: Atomera Inc. Дата публикации: 2017-08-01.

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Номер патента: US20170221714A1. Автор: IWAYA Masanobu,WAKIMOTO Setsuko. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2017-08-03.

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Номер патента: US20170222046A1. Автор: IWAYA Masanobu,WAKIMOTO Setsuko. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2017-08-03.

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Номер патента: US20190237547A1. Автор: Murata Koichi,TSUCHIDA Hidekazu,TAWARA Takeshi. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2019-08-01.

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Номер патента: WO2005038900A1. Автор: Marcus J. H. Van Dal,Radu C. Surdeanu. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2005-04-28.

Integrated semiconductor device and method of manufacturing an integrated semiconductor device

Номер патента: CN101174649A. Автор: 于尔根·福尔. Владелец: Qimonda AG. Дата публикации: 2008-05-07.

Methods of manufacturing vertical channel semiconductor devices

Номер патента: US7781287B2. Автор: Dong-gun Park,Choong-ho Lee,Jae-Man Yoon,Seong-Goo Kim,Seung-Bae Park,Won-sok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-24.

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Номер патента: US20140094013A1. Автор: Kuan-Ling LIU,Shih-Yuan UENG. Владелец: United Microelectronics Corp. Дата публикации: 2014-04-03.

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Номер патента: US5897344A. Автор: Satoshi Teramoto,Yasuhiko Takemura,Hongyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1999-04-27.

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Номер патента: US11967532B2. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

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Номер патента: EP3218937A1. Автор: Hideki Takeuchi,Robert J. Mears,Tsu-Jae King Liu. Владелец: Atomera Inc. Дата публикации: 2017-09-20.

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Номер патента: US12132046B2. Автор: Mirco Cantoro,Dong Il Bae,Ho-jun Kim,Beomjin PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-29.

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Номер патента: US09905464B2. Автор: Chao-Hung Lin,Chih-Kai Hsu,Ssu-I Fu,Yu-Hsiang Hung,Jyh-Shyang Jenq. Владелец: United Microelectronics Corp. Дата публикации: 2018-02-27.

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Номер патента: US20210091231A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2021-03-25.

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Номер патента: US09780193B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Lung Chen,Chia-Lin Lu,Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

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Номер патента: US09653402B2. Автор: Chen-Ming Huang,I-Ming Tseng,Wen-An Liang. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-16.

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Номер патента: US09543410B2. Автор: Wu Meng-Chuan,Yi-Wei Chiu,Tzu-Chan Weng,Li-Te Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-10.

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Номер патента: US20240204051A1. Автор: Takeshi Tawara,Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-06-20.

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Номер патента: US20230178599A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-06-08.

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Номер патента: US20130143373A1. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-06-06.

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Номер патента: US20240290616A1. Автор: Tomohiro Mimura,Masanobu IWAYA,Kensuke HATA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-08-29.

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Номер патента: US20080142901A1. Автор: Yutaka Takeshima,Yasuko Yoshida,Shuji Matsuo,Kota Funayama,Katsuhiro Uchimura. Владелец: Individual. Дата публикации: 2008-06-19.

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Номер патента: US09805930B2. Автор: Katsunori Ueno,Ryo Tanaka,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-31.

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Номер патента: US20220069103A1. Автор: Wei Huang,Xiaodong Luo. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-03-03.

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Номер патента: US09608075B1. Автор: Srinivasan Kannan,Peter Kim,Scott Nelson,Mihir Tungare,Jianwei Wan,Seong-Eun Park. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-03-28.

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Номер патента: US20230299136A1. Автор: Tze-Liang Lee,Pei-Yu Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

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Номер патента: US11424325B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-23.

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Номер патента: US20210074849A1. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-03-11.

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Номер патента: US20220393002A1. Автор: Takafumi Uchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-12-08.

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Номер патента: US12027617B2. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-02.

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Номер патента: US20180308937A1. Автор: Akira Saito,Takayuki Hirose,Yutaka Terao,Hideaki Teranishi,Aki Takigawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-10-25.

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Номер патента: US12132084B2. Автор: Yohei Kagoyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-29.

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Номер патента: US20130001549A1. Автор: Amane Oishi. Владелец: Toshiba Corp. Дата публикации: 2013-01-03.

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Номер патента: US20190221647A1. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2019-07-18.

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Номер патента: US20180323262A1. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2018-11-08.

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Номер патента: US20200287000A1. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-09-10.

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Номер патента: US10998406B2. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-05-04.

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Номер патента: US10700169B2. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-06-30.

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Номер патента: US10553577B2. Автор: Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2020-02-04.

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Номер патента: US20160322227A1. Автор: Koichi Arai,Kenichi Hisada. Владелец: Renesas Electronics Corp. Дата публикации: 2016-11-03.

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Номер патента: US9412819B2. Автор: Koichi Arai,Kenichi Hisada. Владелец: Renesas Electronics Corp. Дата публикации: 2016-08-09.

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Номер патента: US9922829B2. Автор: Koichi Arai,Kenichi Hisada. Владелец: Renesas Electronics Corp. Дата публикации: 2018-03-20.

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Номер патента: WO2011071973A2. Автор: David C. Sheridan,Andrew Ritenour. Владелец: SEMISOUTH LABORATORIES, INC.. Дата публикации: 2011-06-16.

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Номер патента: EP3002777A3. Автор: Koichi Arai,Kenichi Hisada. Владелец: Renesas Electronics Corp. Дата публикации: 2016-04-20.

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Номер патента: US20160099316A1. Автор: Koichi Arai,Kenichi Hisada. Владелец: Renesas Electronics Corp. Дата публикации: 2016-04-07.

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Номер патента: EP2510539A2. Автор: David C. Sheridan,Andrew Ritenour. Владелец: SS SC IP LLC. Дата публикации: 2012-10-17.

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Номер патента: WO2011071973A3. Автор: David C. Sheridan,Andrew Ritenour. Владелец: SEMISOUTH LABORATORIES, INC.. Дата публикации: 2011-10-27.

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Номер патента: US20210391327A1. Автор: Jhon-Jhy Liaw,Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan,Yu-San Chien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-16.

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Номер патента: US9093547B2. Автор: Chang-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-07-28.

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Номер патента: US20140203346A1. Автор: Chang-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-24.

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Номер патента: US20170092771A1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-30.

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Номер патента: US20230032528A1. Автор: Chien-Hao Huang,Katherine H. Chiang,Ming-Yen Chuang,Yun-Feng KAO,Gao-Ming Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-02.

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Номер патента: EP1914797B1. Автор: Puo-Yu Chiang,Shun-Liang Hsu,Tsung-Yi Huang,Ruey-Hsien Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-08-12.

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Номер патента: US20010000914A1. Автор: Young Park,Jong Lee,Hyeok Lee. Владелец: LG Semicon Co Ltd. Дата публикации: 2001-05-10.

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Номер патента: US20240313097A1. Автор: Taehyun Kim,Junggil YANG,Taewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

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Номер патента: US09722078B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

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Номер патента: US09608126B1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

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Номер патента: US20240234212A1. Автор: Zi-Wei FANG,Peng-Soon Lim. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

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Номер патента: US20110194356A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-11.

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Номер патента: US20100001339A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-01-07.

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Номер патента: US20170194193A1. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-07-06.

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Номер патента: US09881831B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-30.

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Номер патента: US09837508B2. Автор: Hsiu-wen Hsu. Владелец: Super Group Semiconductor Co Ltd. Дата публикации: 2017-12-05.

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Номер патента: US20180006133A1. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chia-Lin Liu,Chun-Lung Chen,Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-04.

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Номер патента: US20220262790A1. Автор: Mirco Cantoro,Dong Il Bae,Ho-jun Kim,Beomjin PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-08-18.

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Номер патента: US20240154043A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Guan-Lin Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-09.

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Номер патента: US20170012111A1. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2017-01-12.

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Номер патента: US20200312986A1. Автор: Masakazu Itoh,Hiroki Sakane. Владелец: Denso Corp. Дата публикации: 2020-10-01.

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Номер патента: US20180102411A1. Автор: Hsin-Yu Chen,Sheng-Hao Lin,Huai-Tzu Chiang,Hao-Ming Lee. Владелец: United Microelectronics Corp. Дата публикации: 2018-04-12.

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Номер патента: US20240266437A1. Автор: Chun-Yu Chen,Yu-Shu Lin,Keng-Jen Lin,Bo-Lin HUANG,Jhong-Yi Huang. Владелец: United Microelectronics Corp. Дата публикации: 2024-08-08.

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Номер патента: US11411112B2. Автор: Chun-Chieh Wang,Yueh-Ching Pai,Chi-Jen Yang,Sheng-Wei YEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-09.

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Номер патента: CN104335328B. Автор: 木下明将,福田宪司,辻崇. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-06.

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Номер патента: DE102017117306A1. Автор: Gerhard Schmidt,Erwin Lercher,Johannes Baumgartl,Daniel Schlögl,Matthias Künle. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-01-31.

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Номер патента: US20110233563A1. Автор: Yasuyuki Sakaguchi,Akihiko Sugai. Владелец: Showa Denko KK. Дата публикации: 2011-09-29.

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Номер патента: US20230402327A1. Автор: Chin-Chin Tsai. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2023-12-14.

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Номер патента: US20200295141A1. Автор: Keiji Okumura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-09-17.

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Номер патента: US20170271468A1. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-21.

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Номер патента: KR970072206A. Автор: 윤성렬. Владелец: 현대전자산업 주식회사. Дата публикации: 1997-11-07.

Semiconductor device and method of manufacturing such a semiconductor device

Номер патента: KR100273070B1. Автор: 레오나르두스 페크 헤르마누스. Владелец: 코닌클리케 필립스 일렉트로닉스 엔.브이.. Дата публикации: 2000-12-01.

Method of manufacturing high voltage semiconductor device and the high voltage semiconductor device using the same

Номер патента: KR100836766B1. Автор: 강미현. Владелец: 삼성전자주식회사. Дата публикации: 2008-06-10.

Compound semiconductor device and method of manufacturing the compound semiconductor device

Номер патента: US10134889B2. Автор: Tsuyoshi Takahashi. Владелец: Fujitsu Ltd. Дата публикации: 2018-11-20.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US10002952B2. Автор: Keiji Okumura,Yoshiyuki Sugahara. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-06-19.

Silicon carbide semiconductor base substance, crystal axis alignment method for the same, and method of manufacturing silicon carbide semiconductor device

Номер патента: JP2018037560A. Автор: Yasuyuki Kawada,泰之 河田,Takeshi Tawara,河田　泰之,武志 俵,俵　武志. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-08.

Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities

Номер патента: US6221700B1. Автор: Jun Kojima,Eiichi Okuno. Владелец: Denso Corp. Дата публикации: 2001-04-24.

Method of manufacturing semiconductor integrated circuit device

Номер патента: US20100227472A1. Автор: Takuya Futase. Владелец: Renesas Technology Corp. Дата публикации: 2010-09-09.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09685566B2. Автор: Naoki Yutani,Daisuke CHIKAMORI,Yasuhiko NISHIO. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-06-20.

Semiconductor device having aluminum contacts or vias and method of manufacture therefor

Номер патента: US5913146A. Автор: Sailesh M. Merchant,Binh Nguyenphu. Владелец: Lucent Technologies Inc. Дата публикации: 1999-06-15.

Semiconductor device having gate electrode of polymetal gate structure processed by side nitriding in ammonia atmosphere

Номер патента: TWI227916B. Автор: Satoru Yamada,Masayoshi Saito,Yoshiki Kato,Eiji Kitamura,Kanta Saino. Владелец: Hitachi Ulsi Sys Co Ltd. Дата публикации: 2005-02-11.

Semiconductor device having gate electrode of polymetal gate structure processed by side nitriding in anmonia atmosphere

Номер патента: TW200414328A. Автор: OYU Kiyonori,Satoru Yamada,IIJIMA Shinpei,Masayoshi Saito,Yoshiki Kato,Eiji Kitamura,Kanta Saino. Владелец: Hitachi Ulsi Sys Co Ltd. Дата публикации: 2004-08-01.

Method of forming contact included in semiconductor device

Номер патента: US20240098986A1. Автор: Donghyun Lee,Uihyoung LEE,Suncheul KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

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Номер патента: US20220415902A1. Автор: Donghyun Lee,Uihyoung LEE,Suncheul KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-29.

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Номер патента: US11871563B2. Автор: Donghyun Lee,Uihyoung LEE,Suncheul KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

Method of forming metal line in semiconductor device

Номер патента: TW200516711A. Автор: Kyeong-Keun Choi. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-05-16.

Method of manufacturing contact of semiconductor device

Номер патента: KR100258364B1. Автор: 김대영. Владелец: 현대전자산업주식회사. Дата публикации: 2000-06-01.

Method of fabricating memory cell in semiconductor device

Номер патента: US20050189581A1. Автор: Tae Park. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-09-01.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Methods of removing photoresist and fabricating semiconductor devices

Номер патента: US20070093031A1. Автор: Min-Chieh Yang,Wen-Hsien Huang,Jiunn-Hsing Liao. Владелец: United Microelectronics Corp. Дата публикации: 2007-04-26.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220254917A1. Автор: Masaki Miyazato,Yohei Kagoyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-11.

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Номер патента: US20100090210A1. Автор: Junghyun Lee,Hyoyoung Lee,Jonghyurk Park,Gyeong Sook BANG,Seung Rim Shin,Nak-Jin Choi,Heeyoel Baek,Kun Jun. Владелец: Individual. Дата публикации: 2010-04-15.

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Номер патента: US20210167173A1. Автор: FUJIMOTO Takumi. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2021-06-03.

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Номер патента: US20210217852A1. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-07-15.

Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device

Номер патента: US09958794B2. Автор: Eishi Shiobara. Владелец: Toshiba Corp. Дата публикации: 2018-05-01.

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Номер патента: US20190348568A1. Автор: Harald KÖNIG,Alfred Lell,Sven GERHARD,Jens Ebbecke,Clemens Vierheilig. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2019-11-14.

Method of making a low noise semiconductor device comprising a screening measurement

Номер патента: US5683917A. Автор: Cuong Tran,Ralph Francis Trambarulo,Samuel Suresh Martin. Владелец: Lucent Technologies Inc. Дата публикации: 1997-11-04.

Methods of manufacturing optical sheets, organic light emitting display devices having optical sheets and methods of manufacturing organic light emitting display devices having optical sheets

Номер патента: US09627651B2. Автор: Ki-Seo Kim,Jong-In Baek,Rang-Kyun Mok. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-04-18.

Methods of forming 3-d integrated semiconductor devices having intermediate heat spreading capabilities

Номер патента: US20160190104A1. Автор: Thomas Werner,Frank Feustel,Michael Grillberger. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-30.

Method of manufacturing organic light emitting display device having cathode electrode connected with an auxiliary electrode via a gap space between the first and second banks

Номер патента: US20180204894A1. Автор: Jin-Hee Jang,Sejune Kim,SoJung LEE. Владелец: LG Display Co Ltd. Дата публикации: 2018-07-19.

Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device

Номер патента: US5977615A. Автор: Yukio Yamaguchi,Toru Nomura,Masanori Minamio,Akira Oga. Владелец: Matsushita Electronics Corp. Дата публикации: 1999-11-02.

Substrate for semiconductor devices, method of manufacturing substrate for semiconductor devices, and solid-state imaging device

Номер патента: US20150263212A1. Автор: Hideo Numata,Mokuji Kageyama,Shinji Uya,Nagataka Tanaka. Владелец: Toshiba Corp. Дата публикации: 2015-09-17.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20210328141A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-10-21.

Optical semiconductor device, optoelectronic device and method of manufacturing an optical semiconductor device

Номер патента: WO2023165869A1. Автор: Jens Hofrichter. Владелец: Ams-Osram Ag. Дата публикации: 2023-09-07.

Method of manufacturing resin-encapsulated semiconductor device, and lead frame

Номер патента: US09679835B2. Автор: Shinya Kubota,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2017-06-13.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20170199957A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-13.

Methods of forming conductive materials on semiconductor devices, and methods of forming electrical interconnects

Номер патента: US09768134B2. Автор: Anilkumar Chandolu,Kenneth N. Hagen. Владелец: Micron Technology Inc. Дата публикации: 2017-09-19.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20200117848A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-16.

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Номер патента: US20190171789A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-06.

Optoelectronic semiconductor device comprising an al-containing layer and method of manufacturing the optoelectronic semiconductor device

Номер патента: WO2024184358A1. Автор: Xiaojun Chen,Jong Ho Na,Noor Afifa MOHD HANAFIAH,Muhammad Esmed Alif SAMSUDIN,Azharul Ariff KAMARULZAMAN. Владелец: Ams-Osram International Gmbh. Дата публикации: 2024-09-12.

Method of wire bonding of a semiconductor device for resolving oxidation of copper bonding pad

Номер патента: US20040082174A1. Автор: Yu-Chun Huang,Ning Huang,Wen-Tsung Weng,Wen-Lo Shieh,Hui-Pin Chen,Fu-Yu Huang,Chia-Ling Lu,Chih-Yu Tsai,Shu-Wan Lu,Mei-Hua Chen,Yu-Ju Wang,Ya-Hsin Tseng,Zhe-Sung Wu,Tzu-Lin Liu. Владелец: Individual. Дата публикации: 2004-04-29.

Method of wafer-scale integration of semiconductor devices and semiconductor device

Номер патента: US09608035B2. Автор: Franz Schrank,Cathal Cassidy,Joerg Siegert. Владелец: ams AG. Дата публикации: 2017-03-28.

Method of producing a radiation sensor semiconductor device comprising a multiple colour filter

Номер патента: WO2014127988A1. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2014-08-28.

Method of preparing quantum dot layer, qled display device having the quantum dot layer and method of preparing the same

Номер патента: US20170271549A1. Автор: Xiang Zhou,Tian Yang,Zhao Kang,Ning Chen,Xiaoyan Zhu,Biao TIAN,Xiaona Xu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-09-21.

Method of producing a radiation sensor semiconductor device comprising a multiple color filter

Номер патента: US09837573B2. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2017-12-05.

Method of preparing quantum dot layer, QLED display device having the quantum dot layer and method of preparing the same

Номер патента: US09780257B1. Автор: Xiang Zhou,Tian Yang,Zhao Kang,Ning Chen,Xiaoyan Zhu,Biao TIAN,Xiaona Xu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-10-03.

Miniaturized lens packaging module, preparation method of the lens packaging module, and electronic device having the lens packaging module

Номер патента: US20240266448A1. Автор: Hsin-Yen Hsu. Владелец: Rayprus Technology Foshan Co Ltd. Дата публикации: 2024-08-08.

Method of mounting semiconductor element, and semiconductor device

Номер патента: US09615464B2. Автор: Takashi Kubota,Hidehiko Kira,Masayuki Kitajima,Takatoyo Yamakami. Владелец: Fujitsu Ltd. Дата публикации: 2017-04-04.

Method of manufacturing radiation-emitting semiconductor devices

Номер патента: US5358897A. Автор: Adriaan Valster,Coen T. H. F. Liedenbaum. Владелец: US Philips Corp. Дата публикации: 1994-10-25.

Method of manufacturing integrated circuit semiconductor device

Номер патента: US4806457A. Автор: Masayuki Yanagisawa. Владелец: NEC Corp. Дата публикации: 1989-02-21.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20220255000A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-11.

Method of manufacturing capacitors for semiconductor devices

Номер патента: US7163859B2. Автор: Dong-Woo Kim,Jae-hee Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-16.

Method of manufacturing a tab semiconductor device

Номер патента: US5972739A. Автор: Koji Matsui,Yoshitsugu Funada. Владелец: NEC Corp. Дата публикации: 1999-10-26.

Method of controlling performance boosting of semiconductor device and semiconductor device performing the method

Номер патента: US20210057420A1. Автор: Sangkyu Kim,Jungwook Kim,Jonglae Park,Hyunju KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Method of fabricating vertical structure compound semiconductor devices

Номер патента: US20060148115A1. Автор: Myung Yoo. Владелец: Supergate Technology USA Inc. Дата публикации: 2006-07-06.

System and method of determining pulse properties of semiconductor device

Номер патента: US7495456B2. Автор: Hideki Horii,Yong-ho Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-24.

Methods of forming connection bump of semiconductor device

Номер патента: US20130082090A1. Автор: Sun-Hee Park,Moon-Gi Cho,Hwan-Sik Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-04-04.

Stack type semiconductor device and method of testing the stack type semiconductor device

Номер патента: US20230307420A1. Автор: Seong Hwi Song. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

Method of preventing dielectric breakdown of semiconductor device and semiconductor device preventing dielectric breakdown

Номер патента: US20070253276A1. Автор: Tsuneo Ochi. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2007-11-01.

Semiconductor element mounting member, method of producing the same, and semiconductor device

Номер патента: US20120292769A1. Автор: Eiji Kamijo,Kouichi Takashima,Yoshifumi Aoi. Владелец: ALMT Corp. Дата публикации: 2012-11-22.

Method of alignment mark protection and semiconductor device formed thereby

Номер патента: US20110304006A1. Автор: Chih-Hao Huang,Chiao-Wen Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2011-12-15.

Method of making metal electrode of semiconductor device

Номер патента: US4293637A. Автор: Kenzo Hatada,Takao Kajiwara. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1981-10-06.

Structure and method of power supply routing in semiconductor device

Номер патента: US20230369310A1. Автор: Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Bending and forming method of fabricating exposed leadframes for semiconductor devices

Номер патента: SG71148A1. Автор: David R Kee,Buford H Carter Jr,Jesse E Clark. Владелец: Texas Instruments Inc. Дата публикации: 2000-03-21.

Structure and method of forming a multiple leadframe semiconductor device

Номер патента: US20030209804A1. Автор: James Knapp,Stephen Germain. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2003-11-13.

Curable liquid composition, method of coating, inorganic substrate, and semiconductor device

Номер патента: EP2118175A2. Автор: Maki Itoh,Yukinari Harimoto,Elias Dimitris Katsoulis. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2009-11-18.

Semiconductor device including crack detection structure and method of detecting progressive crack in semiconductor device

Номер патента: US20240222205A1. Автор: Sungho Park,Younggu KANG,Chulhee JEON,Inho LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

Номер патента: US10886248B2. Автор: Satoshi Inada,Jun-Su Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-05.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

Номер патента: US20190214362A1. Автор: Satoshi Inada,Jun-Su Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-07-11.

Detection of seed layers on a semiconductor device

Номер патента: US20070087530A1. Автор: Jae Kim,Ji Young Yim. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-04-19.

Conductive wiring for a semiconductor device and method of forming the same, and flash memory device having the conductive wiring and method of manufacturing the same

Номер патента: KR100795363B1. Автор: 최길현,최경인,박현,이종명,홍종원,이현배. Владелец: 삼성전자주식회사. Дата публикации: 2008-01-17.

GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture

Номер патента: US20100314625A1. Автор: Takashi Sakurada,Hideaki Nakahata,Yoshiyuki Yamamoto,Shinsuke Fujiwara,Seiji Nakahata,Tomoki Uemura. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-12-16.

Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer

Номер патента: US09812350B2. Автор: Julio C. Costa. Владелец: Qorvo US Inc. Дата публикации: 2017-11-07.

Semiconductor device structure with etch stop layer

Номер патента: US20220223736A1. Автор: Chung-Ting Ko,Bo-Cyuan Lu,Chi-On CHUI,Jr-Hung Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-14.

Silicon carbide epitaxial substrate, method of manufacturing silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240332364A1. Автор: Taro Nishiguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-10-03.

Semiconductor device with at least one truncated corner and/or side cut-out

Номер патента: US20160211219A1. Автор: Petko Nedelev,Luc BUYDENS,Sam Maddalena. Владелец: MELEXIS TECHNOLOGIES NV. Дата публикации: 2016-07-21.

Semiconductor device and method of fabricating the same

Номер патента: US20230223306A1. Автор: Wei-Lun Huang,Chia-Ling Wang,Ping-Hung Chiang,Ta-wei Chiu,Chia-Wen Lu. Владелец: United Microelectronics Corp. Дата публикации: 2023-07-13.

Semiconductor device and method of fabricating the same

Номер патента: US12100624B2. Автор: Wei-Lun Huang,Chia-Ling Wang,Ping-Hung Chiang,Ta-wei Chiu,Chia-Wen Lu. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-24.

Isolation structure, method of forming the isolation structure, semiconductor device having the isolation structure and method of manufacturing the semiconductor device having the isolation structure

Номер патента: KR100823703B1. Автор: 최종완,백은경,구주선,김홍근,최용순. Владелец: 삼성전자주식회사. Дата публикации: 2008-04-21.

Heterojunction semiconductor device and manufacturing method

Номер патента: US20160020296A1. Автор: Andreas Bernardus Maria Jansman,Markus Mueller,Tim BOETTCHER,Johannes Josephus Theodorus Marinus Donkers,Jan Sonsky,Stephan Heil,Godefridus Adrianus Maria Hurkx,Jeroen Antoon CROON,Stephen John SQUE. Владелец: NXP BV. Дата публикации: 2016-01-21.

Silicon carbide semiconductor device, power converter, method of manufacturing silicon carbide semiconductor device, and method of manufacturing power converter

Номер патента: US20200194554A1. Автор: Yutaka Fukui,Kohei Adachi,Katsutoshi Sugawara,Rina Tanaka,Hideyuki HATTA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-06-18.

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Номер патента: US20200194554A1. Автор: ADACHI Kohei,Fukui Yutaka,TANAKA Rina,SUGAWARA Katsutoshi,HATTA Hideyuki. Владелец: Mitsubishi Electric Corporation. Дата публикации: 2020-06-18.

The manufacturing method of silicon carbide epitaxy chip and the manufacturing method of manufacturing silicon carbide semiconductor device

Номер патента: CN110476223A. Автор: 大野彰仁. Владелец: Mitsubishi Corp. Дата публикации: 2019-11-19.

Semiconductor device and method for fabricating the same

Номер патента: US09614055B2. Автор: Hiroshi Inagawa,Nobuo Machida,Kentaro Ooishi. Владелец: Renesas Electronics Corp. Дата публикации: 2017-04-04.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device.

Номер патента: US20160254356A1. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2016-09-01.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US11869814B2. Автор: Hidetatsu Nakamura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-01-09.

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Номер патента: US20200119147A1. Автор: Okumura Keiji,Kinoshita Akimasa. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2020-04-16.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20200144371A1. Автор: TAWARA Takeshi,OHSE Mina. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2020-05-07.

SILICON CARBIDE SEMICONDUCTOR DEVICE, SILICON CARBIDE SEMICONDUCTOR ASSEMBLY, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20200152594A1. Автор: Sakai Yoshiyuki,UTSUMI Makoto. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2020-05-14.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20170236914A1. Автор: KUMAGAI Naoki,FUJIMOTO Takumi. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2017-08-17.

RESIN-SEALED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING RESIN-SEALED SEMICONDUCTOR DEVICE

Номер патента: US20140361416A1. Автор: Ito Koji,Ito Kazuhiko,Ogasawara Atsushi,Muyari Koya. Владелец: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.. Дата публикации: 2014-12-11.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20170271156A1. Автор: GOTOH Masahide. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2017-09-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20170271157A1. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-21.

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Номер патента: US20200279921A1. Автор: Shiomi Hiromu. Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2020-09-03.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20190386106A1. Автор: Suzuki Yoshihisa,Hoshi Yasuyuki,HASHIZUME Yuichi,KUMADA Keishirou. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2019-12-19.

Method of manufacturing epitaxial of semiconductor device

Номер патента: JPS5538096A. Автор: Jiyan Baron Jiyatsuku. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1980-03-17.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US09484387B2. Автор: Makoto Shizukuishi. Владелец: Individual. Дата публикации: 2016-11-01.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US20200294815A1. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-09-17.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US20190237343A1. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Inc. Дата публикации: 2019-08-01.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US10748786B2. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Inc. Дата публикации: 2020-08-18.

Method of manufacturing a semiconductor device having a multi-layered wiring structure

Номер патента: US7189637B2. Автор: Kazuhiko Sato,Katsuhiko Hotta,Naokatsu Suwanai,Masashi Sahara,Atsushi Tachigami,Ken Uchikoshi. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2007-03-13.

Semiconductor device and method of manufacturing the same

Номер патента: US20020019129A1. Автор: Masahiro Shimizu. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-14.

Optical semiconductor device and method of manufacturing thereof

Номер патента: EP1812972A1. Автор: Yoshitsugu Dow Corning Toray Co. Ltd. MORITA,Tomoko Dow Corning Toray Co. Ltd. KATO. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2007-08-01.

Packaging devices and methods of manufacture thereof

Номер патента: US09633963B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device

Номер патента: US09812376B2. Автор: Michael Nelhiebel,Stefan Woehlert,Siegfried Roehl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-07.

Semiconductor device and method for manufacturing semiconductor device

Номер патента: US6787430B2. Автор: Jun Kanamori. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2004-09-07.

Semiconductor device package and methods of manufacture thereof

Номер патента: US09799580B2. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2017-10-24.

Semiconductor device packaging warpage control

Номер патента: EP4099367A2. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2022-12-07.

Semiconductor device with embedded battery and method therefor

Номер патента: US20230343683A1. Автор: Stephen Ryan Hooper,Chayathorn Saklang,Chanon Suwankasab,Amornthep Saiyajitara,Crispulo Estira Lictao, JR.,Dominic (PohMeng) Koey. Владелец: NXP USA Inc. Дата публикации: 2023-10-26.

Semiconductor device packaging warpage control

Номер патента: EP4099367A3. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2022-12-28.

Semiconductor device with embedded battery and method therefor

Номер патента: EP4269330A1. Автор: Stephen Ryan Hooper,Chayathorn Saklang,Chanon Suwankasab,Amornthep Saiyajitara,Jr. Crispulo Estira Lictao,Dominic Koey (Pohmeng). Владелец: NXP USA Inc. Дата публикации: 2023-11-01.

Semiconductor device packaging warpage control

Номер патента: US12125716B2. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2024-10-22.

Semiconductor device having polysilicon bit line contact

Номер патента: US7884441B2. Автор: Nam Yoon Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-02-08.

Contact pad for semiconductor devices

Номер патента: US09589891B2. Автор: Jie Chen,Hsien-Wei Chen,Ying-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-07.

Method of Manufacturing Semiconductor Device

Номер патента: US20170372894A1. Автор: Naofumi Ohashi,Tsuyoshi Takeda,Yukinori Aburatani,Shin Hiyama. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-12-28.

Electric connection terminal and method of manufacturing the same, semiconductor device and method of mounting the same

Номер патента: US20050104213A1. Автор: Akiyoshi Aoyagi. Владелец: Seiko Epson Corp. Дата публикации: 2005-05-19.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: US20230031422A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-02-02.

Semiconductor device having capped air caps between buried bit lines and buried gate

Номер патента: US10854676B2. Автор: Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2020-12-01.

Packaged semiconductor device with a lead frame and method for forming

Номер патента: US09640466B1. Автор: Varughese Mathew,Sheila Chopin. Владелец: NXP USA Inc. Дата публикации: 2017-05-02.

Semiconductor device for low-power applications and a method of manufacturing thereof

Номер патента: US7985673B2. Автор: Viet Nguyen Hoang,Phillip Christie,Julien M. M. Michelon. Владелец: NXP BV. Дата публикации: 2011-07-26.

Method of manufacturing multilayer structured semiconductor device

Номер патента: US20040067636A1. Автор: Motoki Kobayashi. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2004-04-08.

Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device

Номер патента: KR101007595B1. Автор: 타케시 코바야시,히사오 스고우. Владелец: 파나소닉 주식회사. Дата публикации: 2011-01-12.

Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device

Номер патента: US20020098672A1. Автор: Theodore Houston. Владелец: Individual. Дата публикации: 2002-07-25.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4125121B1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-08-28.

Wire ball bonding in semiconductor devices

Номер патента: WO2019136743A1. Автор: HAN Zhong,CHEN XIONG,Xi Lin Li,Zi Qi Wang,Yong Qiang Tang. Владелец: Texas Instruments Japan Limited. Дата публикации: 2019-07-18.

Wire ball bonding in semiconductor devices

Номер патента: US20190221537A1. Автор: HAN Zhong,CHEN XIONG,Xi Lin Li,Zi Qi Wang,Yong Qiang Tang. Владелец: Texas Instruments Inc. Дата публикации: 2019-07-18.

METHOD OF FORMING OXIDE FILM INCLUDING TWO NON-OXYGEN ELEMENTS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE

Номер патента: US20210028010A1. Автор: KIM Younsoo,KIM Haeryong,RYU Seungmin,MOON Sunmin,SONG Jeonggyu,WOO Changsu,JUNG Kyooho,CHO Younjoung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-01-28.

METHOD OF FORMING OXIDE FILM INCLUDING TWO NON-OXYGEN ELEMENTS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE

Номер патента: US20210343524A1. Автор: KIM Younsoo,KIM Haeryong,RYU Seungmin,MOON Sunmin,SONG Jeonggyu,WOO Changsu,JUNG Kyooho,CHO Younjoung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-11-04.

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Номер патента: US20200152577A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Номер патента: US20190295958A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-26.

Method of manufacturing multi-die semiconductor devices

Номер патента: EP4016614B1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-03-13.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20100323520A1. Автор: Tae Kyung Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-23.

Semiconductor device and method of fabricating the same

Номер патента: US11314919B2. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-26.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20120086134A1. Автор: Tae Kyung Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-04-12.

Method of manufacturing base for semiconductor device

Номер патента: JPS5270764A. Автор: Tokuo Satou. Владелец: Individual. Дата публикации: 1977-06-13.

Semiconductor device and method of fabricating the same

Номер патента: US20240265188A1. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2024-08-08.

Testing, manufacturing, and packaging methods for semiconductor devices

Номер патента: US09852957B2. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Der-Chyang Yeh,Chin-Hsien Chen,An-Jhih Su,Li-Hsien HUANG,Yan-Fu Lin,Yung-Shou Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-26.

Semiconductor device including cell region stacked on peripheral region and method of fabricating the same

Номер патента: US09666289B2. Автор: Sunghoon Kim,Jae-Eun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-30.

Semiconductor device including air gaps and method of fabricating the same

Номер патента: US09627253B2. Автор: Min-ho Kim. Владелец: SK hynix Inc. Дата публикации: 2017-04-18.

Memory structure with doping-induced leakage paths

Номер патента: US20220301646A1. Автор: Shih-Hao Lin,Jui-Lin Chen,Hsin-Wen Su,Lien-Jung Hung,Ping-Wei Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-22.

Contact via structures of semiconductor devices

Номер патента: US20230395425A1. Автор: Yung Fu Chong,Rui Tze TOH,Fangyue Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-12-07.

Contact via structures of semiconductor devices

Номер патента: US11776844B2. Автор: Yung Fu Chong,Rui Tze TOH,Fangyue Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-10-03.

Semiconductor device and method of fabricating the same

Номер патента: US20210143182A1. Автор: Dong Min Kang,Hyung Sup Yoon,Sung-Bum BAE,Kyu Jun CHO,Sung-Jae Chang. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-05-13.

Methods of forming multiple n-type semiconductor devices with different threshold voltages on a semiconductor substrate

Номер патента: US20140227845A1. Автор: Yanxiang Liu,Manfred Eller,Johannes Van Meer. Владелец: Globalfoundries Inc. Дата публикации: 2014-08-14.

Semiconductor device and method of forming the same

Номер патента: US09524967B1. Автор: Yu-Ping Wang,Chien-Ming Lai,Ya-Huei Tsai,Ching-Hsiang Chiu,Hao-Yeh Liu,Mon-Sen Lin. Владелец: United Microelectronics Corp. Дата публикации: 2016-12-20.

Method of manufacturing semiconductor integrated circuit device having complementary MISFET

Номер патента: JP2509173B2. Автор: 修二 池田,真 元吉. Владелец: HITACHI LTD. Дата публикации: 1996-06-19.

Efuse inside and gate structure on triple-well region

Номер патента: US11848324B2. Автор: Robert J. Gauthier, Jr.,Ephrem G. Gebreselasie,Steven M. Shank,Alain F. Loiseau,Michel J. Abou-Khalil,Ahmed Y. Ginawi. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-12-19.

Electrically Conductive Element, Power Semiconductor Device Having an Electrically Conductive Element and Method of Manufacturing a Power Semiconductor Device

Номер патента: US20160013117A1. Автор: Nelhiebel Michael,Woehlert Stefan,ROEHL Siegfried. Владелец: . Дата публикации: 2016-01-14.

WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE, METHOD OF FORMING PATTERN STRUCTURE, IMPRINT MOLD AND METHOD OF MANUFACTURING THE SAME, IMPRINT MOLD SET, AND METHOD OF MANUFACTURING MULTILAYER WIRING BOARD

Номер патента: US20180310413A1. Автор: Furukawa Tadashi,FURUSE Ayako,SOTODA Teppei,KASAI Ryohei,FURUGEN Ryo,HOSODA Tetsushi. Владелец: Dai Nippon Printing Co., Ltd.. Дата публикации: 2018-10-25.

Optical semiconductor device and method of manufacturing optical semiconductor device

Номер патента: US8798110B2. Автор: Tatsuya Takeuchi,Taro Hasegawa. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2014-08-05.

Method and apparatus for manufacturing a packaged semiconductor device, packaged semiconductor device obtained with such a method and metal carrier suitable for use in such a method

Номер патента: AU2003255956A1. Автор: Frederik H. In 't Veld,Johannes H. Savenije. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2004-02-25.

Multiple well device and process of manufacture

Номер патента: US5698458A. Автор: Chen-Chiu Hsue,Ming-Tzong Yang,Sun-Chieh Chien,Chung-Yuan Lee. Владелец: United Microelectronics Corp. Дата публикации: 1997-12-16.

Semiconductor device and method of manufacturing the same

Номер патента: US5889335A. Автор: Takashi Kuroi,Hirokazu Sayama,Maiko Sakai,Katsuyuki Horita. Владелец: Mitsubishi Electric Corp. Дата публикации: 1999-03-30.

Semiconductor device and manufacturing method

Номер патента: US20200274332A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2020-08-27.

Semiconductor device and manufacturing method

Номер патента: WO2019020871A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2019-01-31.

Semiconductor device and manufacturing method thereof

Номер патента: USRE41696E1. Автор: Michiko Yamauchi. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2010-09-14.

Semiconductor device having align key and method of fabricating the same

Номер патента: US7129591B2. Автор: Sung-Ho Kim,Myeong-Cheol Kim,Jin-Hee Kim,Doo-Youl Lee,Sung-woo Lee,Sang-Su Kim,In-Wook Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-10-31.

Semiconductor device and manufacturing method thereof

Номер патента: US6642124B1. Автор: Michiko Yamauchi. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2003-11-04.

Reduced Size Semiconductor Device And Method For Manufacture Thereof

Номер патента: US20160005468A1. Автор: Ya Jui Lee,Kaun Fu Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2016-01-07.

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Номер патента: US20160013117A1. Автор: Michael Nelhiebel,Stefan Woehlert,Siegfried Roehl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-01-14.

Semiconductor device having align key and method of fabricating the same

Номер патента: US20050104229A1. Автор: Sung-Ho Kim,Myeong-Cheol Kim,Jin-Hee Kim,Doo-Youl Lee,Sung-woo Lee,Sang-Su Kim,In-Wook Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-05-19.

Redistribution Layers And Methods Of Fabricating The Same In Semiconductor Devices

Номер патента: US20210098400A1. Автор: Hsiang-Ku Shen,Dian-Hau Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Micro-pattern forming method, capacitor and method of manufacturing the same, semiconductor device and method of manufacturing the same, and electronic system including semiconductor device

Номер патента: US20190157276A1. Автор: JAE-HEE KIM,SOON-MOK HA,Jong-Hyuk Kim,Chan Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-23.

Method of manufacturing nitride semiconductor device

Номер патента: EP1768194B1. Автор: Kunio Takeuchi,Yasumitsu Kunoh. Владелец: Sanyo Electric Co Ltd. Дата публикации: 2011-07-27.

Semiconductor device interconnection pattern with rim

Номер патента: CA1203643A. Автор: Johannes A. Appels,Henricus G.R. Maas. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1986-04-22.

Method of manufacturing capacitor of semiconductor device having tantalum oxide dielectric film

Номер патента: KR100331569B1. Автор: 박흥수,박영욱,박기연. Владелец: 윤종용. Дата публикации: 2002-04-06.

Semiconductor device package and methods of manufacture thereof

Номер патента: US20180012815A1. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2018-01-11.

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

Номер патента: US20220149242A1. Автор: Yohei Ito. Владелец: ROHM CO LTD. Дата публикации: 2022-05-12.

Semiconductor device package and methods of manufacture thereof

Номер патента: US20170278763A1. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2017-09-28.

Semiconductor device and a method of manufacturing the same

Номер патента: US7303986B2. Автор: Kazuhiko Sato,Katsuhiko Hotta,Naokatsu Suwanai,Masashi Sahara,Atsushi Tachigami,Ken Uchikoshi. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2007-12-04.

Method of manufacturing nitride semiconductor device

Номер патента: US8697466B2. Автор: Satoshi Komada. Владелец: Sharp Corp. Дата публикации: 2014-04-15.

Leadframe, method of manufacturing the same, semiconductor device using the same, and method of manufacturing the device

Номер патента: TW577157B. Автор: Akinobu Abe. Владелец: Shinko Electric Ind Co. Дата публикации: 2004-02-21.

Semiconductor device and a method of manufacturing the same

Номер патента: US20070066050A1. Автор: Kazuhiko Sato,Katsuhiko Hotta,Naokatsu Suwanai,Masashi Sahara,Atsushi Tachigami,Ken Uchikoshi. Владелец: Individual. Дата публикации: 2007-03-22.

Redistribution layers and methods of fabricating the same in semiconductor devices

Номер патента: US11967573B2. Автор: Hsiang-Ku Shen,Dian-Hau Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Method of forming fine patterns of semiconductor device

Номер патента: TW201140651A. Автор: Chong-Kwang Chang,Young-Mook Oh,Seo-Woo Nam,Myung-Joo Lee,Woo-Cheol Jeon,Ju-Beom Yi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-11-16.

Redistribution layers and methods of fabricating the same in semiconductor devices

Номер патента: US20240274558A1. Автор: Hsiang-Ku Shen,Dian-Hau Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Group iii nitride semiconductor device, epitaxial substrate, and method of fabricating group iii nitride semiconductor device

Номер патента: TW201034054A. Автор: Masaki Ueno,Takao Nakamura,Takashi Kyono,Katsushi Akita,Yusuke Yoshizumi,Takamichi Sumitomo,Yohei Enya. Владелец: Sumitomo Electric Industries. Дата публикации: 2010-09-16.

Method of forming metal wiring of semiconductor device

Номер патента: TW200537623A. Автор: Dong-Joon Kim. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2005-11-16.

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20150221498A1. Автор: Genba Jun. Владелец: Sumitomo Electric Industries, Ltd.. Дата публикации: 2015-08-06.

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер патента: US20160254149A1. Автор: Genba Jun. Владелец: . Дата публикации: 2016-09-01.

Semiconductor inspecting apparatus and method of inspecting and manufacturing semiconductor device using the same

Номер патента: US20150270182A1. Автор: Jaehong Kim,Seung Hyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-09-24.

Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device

Номер патента: US9633840B2. Автор: Jun Genba. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-04-25.

Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: JP2011082547A. Автор: Shiro Sakai,士郎 酒井. Владелец: Seoul Optodevice Co Ltd. Дата публикации: 2011-04-21.

Contact Pad for Semiconductor Devices

Номер патента: US20170179051A1. Автор: Jie Chen,Hsien-Wei Chen,Ying-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-22.

Vertical semiconductor device and method for fabricating the same

Номер патента: US12035526B2. Автор: Yoo Hyun NOH. Владелец: SK hynix Inc. Дата публикации: 2024-07-09.

Method of producing hybrid oxide for semiconductor devices

Номер патента: YU301876A. Автор: S H Cohen,J J Fabula. Владелец: RCA Corp. Дата публикации: 1982-06-30.

Method of fixing connecting wire to semiconductor device

Номер патента: JPS55154742A. Автор: Hatsuke Hansuyurugen,Pentsuru Rainhoruto,Raushiyaa Geruharuto,Shiyuraa Rotaaru,Uirupuzaa Osukaaru. Владелец: SIEMENS AG. Дата публикации: 1980-12-02.

Vertical semiconductor device and method for fabricating the same

Номер патента: US20240315031A1. Автор: Yoo Hyun NOH. Владелец: SK hynix Inc. Дата публикации: 2024-09-19.

Method of forming isolation structure and semiconductor device with the isolation structure

Номер патента: TW201218314A. Автор: Yi-Jung Chen,Jyun-Huan Chen. Владелец: Nanya Technology Corp. Дата публикации: 2012-05-01.

Method of manufacturing substrates for semiconductor devices, corresponding product and semiconductor device

Номер патента: US20240178105A1. Автор: Mauro Mazzola,Roberto Tiziani. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-05-30.

Method of Manufacture of a Semiconductor Device

Номер патента: US20200006178A1. Автор: Lee Long Hua,Wu Chih-Wei,HUANG Sung-Hui,Kuo Li-Chung,Shih Ying-Ching,Huang Kuan-Yu,Li Pai Yuan. Владелец: . Дата публикации: 2020-01-02.

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Номер патента: US20180012830A1. Автор: Tsai Po-Hao,Lin Jing-Cheng,Shih Ying-Ching,Lu Szu-Wei,Chen I-Ting. Владелец: . Дата публикации: 2018-01-11.

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Номер патента: US20140210074A1. Автор: Szu Wei Lu,Jing-Cheng Lin,Po-Hao Tsai,Ying-Ching Shih,I-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-07-31.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME SEMICONDUCTOR DEVICE

Номер патента: US20160268163A1. Автор: NAKAMURA Kenro. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2016-09-15.

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Номер патента: US20200321274A1. Автор: Magni Pierangelo. Владелец: . Дата публикации: 2020-10-08.

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Номер патента: US20220406703A1. Автор: Magni Pierangelo. Владелец: STMICROELECTRONICS S.R.L.. Дата публикации: 2022-12-22.

Method of manufacturing transistor of semiconductor device

Номер патента: KR0172788B1. Автор: 이길호. Владелец: 김주용. Дата публикации: 1999-03-30.

Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device

Номер патента: US9570408B2. Автор: Koji Ito,Kazuhiko Ito,Atsushi Ogasawara,Koya Muyari. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-02-14.

Functional macro and method of designing the same, and semiconductor device and method of manufacturing the same

Номер патента: KR100329951B1. Автор: 미모또겐이찌로,호조다께히꼬. Владелец: 니시무로 타이죠. Дата публикации: 2002-03-27.

Method of manufacturing passivation of semiconductor device

Номер патента: KR100256823B1. Автор: 이주상. Владелец: 현대전자산업주식회사. Дата публикации: 2000-05-15.

Semiconductor device with an element isolation oxide film having a flat surface, and method of manufacturing such a semiconductor device

Номер патента: DE19606682C2. Автор: Shigeru Shiratake,Hiroshi Matsuo,Kenji Yasumura,Yuichi Yokoyama,Takaaki Murakami,Kaoru Motonami,Satoshi Hamamoto,Kenji Morisawa,Yasuyoshi Itoh,Ritsuko Gotoda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-04-19.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20230036228A1. Автор: Yoshikazu Motoyama,Akito Iwao. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-02-02.

Superjunction semiconductor device and method of manufacturing same

Номер патента: US20230223436A1. Автор: Myeong Bum PYUN,Min Gi JO,Jin Young Goh. Владелец: DB HiTek Co Ltd. Дата публикации: 2023-07-13.

Semiconductor device and method of using

Номер патента: US20220238670A1. Автор: Jia Liang ZHONG,Cun Cun CHEN,Xin Yong WANG,Ming Jian WANG. Владелец: TSMC China Co Ltd. Дата публикации: 2022-07-28.

Semiconductor device and method of using

Номер патента: US11799008B2. Автор: Jia Liang ZHONG,Cun Cun CHEN,Xin Yong WANG,Ming Jian WANG. Владелец: TSMC China Co Ltd. Дата публикации: 2023-10-24.

Stackable semiconductor device with 2d material layer and methods of manufacturing thereof

Номер патента: US20230231058A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-07-20.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20170179277A1. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2017-06-22.

Semiconductor device

Номер патента: US09837540B2. Автор: Chien-Hao Chen,En-Chiuan Liou,Tang-Chun Weng. Владелец: United Microelectronics Corp. Дата публикации: 2017-12-05.

Semiconductor device and method of manufacturing the same

Номер патента: US09812534B2. Автор: Naiqian Zhang,Fengli PEI. Владелец: Dynax Semiconductor Inc. Дата публикации: 2017-11-07.

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Номер патента: US09590105B2. Автор: Cheng-Ting Chung,Chao-Hsin Chien,Che-Wei Chen. Владелец: National Chiao Tung University NCTU. Дата публикации: 2017-03-07.

Method of making silicon carbide semiconductor device

Номер патента: US7947555B2. Автор: Eiichi Okuno,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-05-24.

Transistors and methods of forming transistors using vertical nanowires

Номер патента: US20180233583A1. Автор: Alexander Reznicek,Dominic J. Schepis. Владелец: Globalfoundries Inc. Дата публикации: 2018-08-16.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230055755A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-02-23.

High hole mobility transistor (HHMT) and method of manufacturing the same

Номер патента: US12136669B2. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2024-11-05.

Method of fabricating semiconductor device having epitaxial structure

Номер патента: US11735661B2. Автор: Chun-Wei Yu,Yu-Ren Wang,Chi-Hsuan Tang,Kuang-Hsiu Chen,Sung-Yuan Tsai. Владелец: United Microelectronics Corp. Дата публикации: 2023-08-22.

Semiconductor device and formation thereof

Номер патента: US09698240B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-04.

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Номер патента: US20240113216A1. Автор: Carsten Schaeffer,Yuliya Lisunova,Andreas Frank Behrendt,Simon Paul Sindermann,Adriana Mercedes Sanchez Lotero,Silke Liebscher. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-04-04.

Semiconductor device and method of forming the same

Номер патента: US20240312997A1. Автор: Chih-Hao Chang,Chun-Sheng Liang,Ta-Chun Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Semiconductor device and method of formation

Номер патента: US09525072B2. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: National Taiwan University NTU. Дата публикации: 2016-12-20.

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Номер патента: EP4386844A2. Автор: Jeongho Lee,Junsun HWANG,Sewoong PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-19.

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Номер патента: US20160005830A1. Автор: Ming-Han Liao. Владелец: National Taiwan University NTU. Дата публикации: 2016-01-07.

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Номер патента: EP4432340A1. Автор: Taehyun Kim,Junggil YANG,Taewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-18.

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Номер патента: US12132106B2. Автор: Shin-Hung Li. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-29.

Semiconductor device and method of formation

Номер патента: US09917169B2. Автор: Ming-Han Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-13.

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Номер патента: US11935924B2. Автор: Dong Il Bae,Beomjin PARK,Noh Yeong PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-19.

Method of forming a high voltage semiconductor device having a voltage sustaining region

Номер патента: EP1468439B1. Автор: Richard A. Blanchard. Владелец: General Semiconductor Inc. Дата публикации: 2009-12-09.

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Номер патента: US20240339501A1. Автор: Che-Hsien Lin,Chun-Chia Chen,Chun-jen Huang,Te-Chang Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-10.

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Номер патента: US09761663B2. Автор: Hitoshi Abe,Seiji Momota,Kenji Kouno,Hiromitsu Tanabe. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-12.

Methods of forming fins for FinFET semiconductor devices and the selective removal of such fins

Номер патента: US09704973B2. Автор: Ruilong Xie,Andy C. Wei. Владелец: Globalfoundries Inc. Дата публикации: 2017-07-11.

Complex semiconductor devices of the SOI type

Номер патента: US09466717B1. Автор: Ran Yan,Jan Hoentschel,Alban Zaka. Владелец: Globalfoundries Inc. Дата публикации: 2016-10-11.

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Номер патента: US20150024530A1. Автор: LEE Bong-Won. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2015-01-22.

Method of fabricating semiconductor device

Номер патента: US20210280717A1. Автор: Chun-Wei Yu,Yu-Ren Wang,Chi-Hsuan Tang,Kuang-Hsiu Chen,Sung-Yuan Tsai. Владелец: United Microelectronics Corp. Дата публикации: 2021-09-09.

Method of fabricating semiconductor device

Номер патента: US20230352587A1. Автор: Chun-Wei Yu,Yu-Ren Wang,Chi-Hsuan Tang,Kuang-Hsiu Chen,Sung-Yuan Tsai. Владелец: United Microelectronics Corp. Дата публикации: 2023-11-02.

Semiconductor device and method of fabricating the same

Номер патента: US20240204054A1. Автор: Dong Il Bae,Beomjin PARK,Noh Yeong PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-20.

Semiconductor device and formation thereof

Номер патента: US09847233B2. Автор: Yen-Ting Chen,Chee-Wee Liu,I-Hsieh Wong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-19.

Method of fabricating semiconductor device

Номер патента: US20230354583A1. Автор: Yu-Cheng Tung,Li-Wei Feng,Janbo Zhang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2023-11-02.

Semiconductor device and channel structure thereof

Номер патента: US20160093745A1. Автор: Jean-Pierre Colinge,Carlos H. Diaz. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-31.

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Номер патента: US20220384627A1. Автор: Tohru SHIRAKAWA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-12-01.

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Номер патента: US20200203512A1. Автор: Tohru SHIRAKAWA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-06-25.

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Номер патента: US20190123194A1. Автор: Patrick M. Shea. Владелец: Renesas Electronics America Inc. Дата публикации: 2019-04-25.

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Номер патента: US10825926B2. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2020-11-03.

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Номер патента: US20240222456A1. Автор: Chia-Ta Hsieh,Hsin-Fu Lin,Tsung-Hao YEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-04.

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Номер патента: US20240282830A1. Автор: Sangmoon Lee,Jinbum Kim,Gyeom KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-22.

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Номер патента: US20240379673A1. Автор: Chia-Ta Yu,Yuan-Ching Peng,Jiun-Ming Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

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Номер патента: US20240088260A1. Автор: Han Seok KO,Dae Il Kim,Ji Houn Jung,Ung Bi Son. Владелец: DB HiTek Co Ltd. Дата публикации: 2024-03-14.

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Номер патента: US20210167167A1. Автор: KAWADA Yasuyuki. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2021-06-03.

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Номер патента: US20160293753A1. Автор: NAKAMURA Shunichi,INOUE Tetsuto,SUGAI Akihiko. Владелец: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.. Дата публикации: 2016-10-06.

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Номер патента: US20170301789A1. Автор: YAMADA Ryuji,Takei Manabu. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2017-10-19.

Metal-insulator-semiconductor device manufacture

Номер патента: CA1120605A. Автор: William A. Pliskin,Joseph F. Shepard,Martin Revitz,James R. Gardiner. Владелец: International Business Machines Corp. Дата публикации: 1982-03-23.

Method of forming transistors of different configurations

Номер патента: US20230369513A1. Автор: Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

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Номер патента: US11888032B2. Автор: Thomas Basler,Dethard Peters,Jens Peter Konrath,Michael Hell,Caspar Leendertz,Rudolf Elpelt,Paul Ellinghaus,Shiqin Niu,Konrad Schraml,Bernd Leonhard Zippelius. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-30.

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Номер патента: EP4208899A1. Автор: Jan Vobecky,Umamaheswara VEMULAPATI. Владелец: Hitachi Energy Switzerland AG. Дата публикации: 2023-07-12.

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Номер патента: WO2022048919A1. Автор: Jan Vobecky,Umamaheswara VEMULAPATI. Владелец: Hitachi Energy Switzerland AG. Дата публикации: 2022-03-10.

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Номер патента: US20140211117A1. Автор: KIM Jae-sung,CHOI Jin-Young,Kim Cha-Dong. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2014-07-31.

Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device

Номер патента: US20070063317A1. Автор: Dae-Joung Kim,Dae-Youp Lee,Ji-Yong You,Chun-Suk Suh,Do-yul Yoo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-22.

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Номер патента: US20220199818A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2022-06-23.

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Номер патента: US20230317842A1. Автор: Shinsuke Harada,Masakazu Baba. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-10-05.

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Номер патента: US20180026133A1. Автор: Till Schloesser,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-25.

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Номер патента: US20220069087A1. Автор: HAYASHI Shingo,FUJIMOTO Takumi. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2022-03-03.

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Номер патента: US20180061951A1. Автор: Shoji Kitamura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-01.

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Номер патента: US20180138273A1. Автор: Tsuji Takashi. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2018-05-17.

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Номер патента: US20220285501A1. Автор: ICHIKAWA Yoshihito. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2022-09-08.

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Номер патента: US20180182887A1. Автор: Yasunori Tanaka,Takeshi Tawara,Shinsuke Harada,Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-06-28.

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Номер патента: US20160240661A1. Автор: Hirler Franz,Schloesser Till,Meiser Andreas. Владелец: . Дата публикации: 2016-08-18.

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Номер патента: US20150303294A1. Автор: Yasushi Niimura,Toshiaki SAKATA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2015-10-22.

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Номер патента: WO2007016969A1. Автор: Jean Michel Reynes,Alain Deram,Stéphane ALVES,Blandino Lopes,Joel Margheritta. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2007-02-15.

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Номер патента: EP1911097B1. Автор: Jean Michel Reynes,Alain Deram,Stéphane ALVES,Blandino Lopes,Joel Margheritta. Владелец: NXP USA Inc. Дата публикации: 2018-04-25.

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Номер патента: DE102021117826A1. Автор: Frank Pfirsch,Thomas Kuenzig. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-01-12.

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Номер патента: US20060202609A1. Автор: Jin Jang,Sung-hoon Lim,Kyu-Chang Park. Владелец: Individual. Дата публикации: 2006-09-14.

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Номер патента: US11757254B2. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2023-09-12.

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Номер патента: WO2021144377A1. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2021-07-22.

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Номер патента: EP1505698B1. Автор: Won-seok Lee,Joon-seop Kwak,Kyoung-ho Ha,Ho-sun Paek,Sung-nam Lee,Tan B-502 Stbobo 2-cha Sakong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-09.

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Номер патента: US20190123139A1. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2019-04-25.

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Номер патента: US20200066840A9. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2020-02-27.

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Номер патента: US4937645A. Автор: Osamu Tsuchiya,Fumio Ootsuka. Владелец: HITACHI LTD. Дата публикации: 1990-06-26.

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Номер патента: CN1306586C. Автор: 清水和宏. Владелец: Mitsubishi Electric Corp. Дата публикации: 2007-03-21.

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Номер патента: US11723240B2. Автор: Woosik Jeon,Eon Seok OH,Jungmin Choi,Seungsoo Hong,Junkyeong Jeong. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-08-08.

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Номер патента: US20240363696A1. Автор: Tsubasa HONKE,Takaya MIYASE,Taro Enokizono,Hiroki Nishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-10-31.

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Номер патента: US09935280B2. Автор: Jin Hwan Choi,Young Gug Seol,Tae Woong Kim,Ju Chan Park,Pil Suk Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-04-03.

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Номер патента: US20160163653A1. Автор: Coenraad Cornelis Tak,Jeroen Antoon CROON. Владелец: NXP BV. Дата публикации: 2016-06-09.

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Номер патента: US20240194731A1. Автор: Tao DOU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-06-13.

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Номер патента: US20240274534A1. Автор: Zvi Or-Bach,Jin-Woo Han. Владелец: Monolithic 3D Inc. Дата публикации: 2024-08-15.

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Номер патента: TW201145361A. Автор: Hitoshi Kuribayashi,Ayako YAJIMA,Akihiko Ohi,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-12-16.

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Номер патента: US3127659A. Автор: John V Jenkinson. Владелец: Microwave Associates Inc. Дата публикации: 1964-04-07.

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Номер патента: US5895950A. Автор: Andrew J. Walker,Roger Cuppens,Alwin N. Kronert. Владелец: US Philips Corp. Дата публикации: 1999-04-20.

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Номер патента: US12039242B2. Автор: Chung-Hsing Wang,Jerry Chang Jui Kao,Tzu-Ying LIN,Hui-Zhong ZHUANG,Jung-Chan YANG,Pochun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

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Номер патента: US09837429B2. Автор: Youngwoo Park,Shinhwan Kang,Jaeduk LEE,Yunghwan Son,Jaesung SIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-12-05.

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Номер патента: US5874755A. Автор: Daniel S. Marshall,William J. Ooms,Jerald A. Hallmark. Владелец: Motorola Inc. Дата публикации: 1999-02-23.

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Номер патента: US09601215B2. Автор: Takuro Ohmaru. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-21.

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Номер патента: US8450183B2. Автор: Atsushi Narazaki,Kaoru Motonami,Ryoichi Fujii,Shigeto Honda. Владелец: Mitsubishi Electric Corp. Дата публикации: 2013-05-28.

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Номер патента: US20210305343A1. Автор: Woosik Jeon,Eon Seok OH,Jungmin Choi,Seungsoo Hong,Junkyeong Jeong. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-09-30.

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Номер патента: US20230345774A1. Автор: Woosik Jeon,Eon Seok OH,Jungmin Choi,Seungsoo Hong,Junkyeong Jeong. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-10-26.

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Номер патента: US09728556B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Shinpei Matsuda,Kenichi Okazaki,Masahiko Hayakawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-08.

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Номер патента: US20140008728A1. Автор: Yoshitaka Kamo. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-01-09.

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Номер патента: US8809989B2. Автор: Yoshitaka Kamo. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-08-19.

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Номер патента: US20130134501A1. Автор: Son Yong-Hoon,Kang Jong-Hyuk,Lee Jong-Wook. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-05-30.

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Номер патента: US20220045222A1. Автор: Holland Steffen,RITTER Hans-Martin,NOTERMANS Guido,Utzig Joachim,Vaddagere Nagaraju Vasantha Kumar. Владелец: NEXPERIA B.V.. Дата публикации: 2022-02-10.

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Номер патента: US20150129928A1. Автор: ABOUDA Kamel,BESSE PATRICE,Bernon-Enjalbert Valerie,Givelin Philippe. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2015-05-14.

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Номер патента: CN1967338A. Автор: 金时烈,金彰洙,金炳住,周振豪,沈怡燮,赵国来,蔡钟哲,崔志源. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-05-23.

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Номер патента: US8330194B2. Автор: Takashi Sato. Владелец: Seiko Epson Corp. Дата публикации: 2012-12-11.

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Номер патента: TW200734717A. Автор: Jin-Ho Ju,Chong-Chul Chai,Ji-Won Choi,Jang-Soo Kim,Shi-Yul Kim,Gug-Rae Jo,Byoung-Joo Kim,Yi-Seop Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-09-16.

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Номер патента: US20140021488A1. Автор: LEE Jae Hoon. Владелец: . Дата публикации: 2014-01-23.

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Номер патента: US20180308937A1. Автор: Saito Akira,Hirose Takayuki,Teranishi Hideaki,TAKIGAWA Aki,TERAO Yutaka. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2018-10-25.

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Номер патента: US20200343345A1. Автор: UTSUMI Makoto,ARAOKA Tsuyoshi. Владелец: FUJI ELECTRIC CO., LTD.. Дата публикации: 2020-10-29.

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Номер патента: US20220376065A1. Автор: Masuda Takeyoshi,Hatayama Tomoaki,HARADA Shinsuke. Владелец: . Дата публикации: 2022-11-24.

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Номер патента: DE112020002222T5. Автор: Kouichi Murata,Akihiro Koyama,Koji Nakayama,Takeshi Tawara,Manabu Takei,Yoshiyuki Yonezawa,Hidekazu Tsuchida,Shinichiro Matsunaga,Tomonori MIZUSHIMA,Kensuke Takenaka,Mitsuru SOMETANI,Yuji Kiuchi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-02-17.

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Номер патента: EP0390274A1. Автор: Aart Adrianus Van Gorkum. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1990-10-03.

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Номер патента: US20200176697A1. Автор: Lixuan Chen. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-06-04.

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Номер патента: US20030204280A1. Автор: Yoshiaki Kobayashi. Владелец: Trecenti Technologies Inc. Дата публикации: 2003-10-30.

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Номер патента: US20060086979A1. Автор: Yang-Sun Kim,Taek-Hee Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-04-27.

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Номер патента: US20240355719A1. Автор: Shun-Hsing Liao. Владелец: Shunsin Technology Zhongshan Ltd. Дата публикации: 2024-10-24.

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Номер патента: US12113155B2. Автор: Takashi Araki,Tsukasa Maruyama,Takehiro Miyaji. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2024-10-08.

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Номер патента: US20090206435A1. Автор: Kenzo Fukuyoshi,Keisuke Ogata,Mitsuhiro Nakao,Tadashi Ishimatsu,Akiko Ushibori. Владелец: Toppan Printing Co Ltd. Дата публикации: 2009-08-20.

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Номер патента: US7737044B2. Автор: Kenzo Fukuyoshi,Keisuke Ogata,Mitsuhiro Nakao,Tadashi Ishimatsu,Akiko Uchibori. Владелец: Toppan Printing Co Ltd. Дата публикации: 2010-06-15.

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Номер патента: WO2006001317A1. Автор: Kenzo Fukuyoshi,Keisuke Ogata,Mitsuhiro Nakao,Tadashi Ishimatsu,Akiko Uchibori. Владелец: TOPPAN PRINTING CO., LTD.. Дата публикации: 2006-01-05.

Semiconductor devices having dummy patterns and methods of fabricating the same

Номер патента: US09748257B2. Автор: Jaehan Lee,Won-Seok Jung,Kyungjoong JOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Method of manufacturing semiconductor device including such input protection transistor

Номер патента: US5183773A. Автор: Kazuaki Miyata. Владелец: Mitsubishi Electric Corp. Дата публикации: 1993-02-02.

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Номер патента: US20090243017A1. Автор: Takeshi Takeda,Kenji Takeo,Tadayuki Dofuku. Владелец: Sony Corp. Дата публикации: 2009-10-01.

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Номер патента: US20140377888A1. Автор: YIN Long,Hunglin Chen,Qiliang Ni,Rongwei FAN,Feijue Liu. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2014-12-25.

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Номер патента: US09601494B2. Автор: Seung-Jun Lee,Dae-Ik Kim,Young-Seung Cho,Kyung-Eun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-21.

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Номер патента: US09575386B2. Автор: Jae-Sung Kim,Jin-Young Choi,Cha-Dong KIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-02-21.

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Номер патента: TWI294688B. Автор: Tsukasa Eguchi,Hiroshi Sera. Владелец: Seiko Epson Corp. Дата публикации: 2008-03-11.

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Номер патента: US09945899B2. Автор: Stefano Aresu,Michael Roehner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-17.

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Номер патента: US6225146B1. Автор: Yukio Yamaguchi,Toru Nomura,Masanori Minamio,Akira Oga. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2001-05-01.

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Номер патента: US7323735B2. Автор: Naotaka Hashimoto,Shuji Ikeda,Yutaka Hoshino. Владелец: Renesas Technology Corp. Дата публикации: 2008-01-29.

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Номер патента: TW502112B. Автор: Sang-eun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-09-11.

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Номер патента: US20040188858A1. Автор: Yoshifumi Watanabe. Владелец: Denso Corp. Дата публикации: 2004-09-30.

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Номер патента: US12100658B2. Автор: Zvi Or-Bach,Jin-Woo Han. Владелец: Monolithic 3D Inc. Дата публикации: 2024-09-24.

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Номер патента: JPH0618185B2. Автор: 徹志 酒井,邦彦 渡辺,俊彦 高倉,重雄 黒田,幹規 河路,裕幸 西沢. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 1994-03-09.

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Номер патента: US20220238639A1. Автор: Xianlei CAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-07-28.

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Номер патента: US09978932B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

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Номер патента: US09871062B2. Автор: Su Wan WOO,Wan Soon Im. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-01-16.

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Номер патента: US09812426B1. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Li-Han Hsu,Cheng-Hsien Hsieh,Tzu-Shiun Sheu,Yan-Fu Lin,Chin-te Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

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Номер патента: US12142587B2. Автор: Jinho PARK,Jeong Hoon Ahn,Chin Kim,Yongseung Bang,Jiyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-12.

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Номер патента: US09520556B2. Автор: Hideki Horii,Jeonghee Park,Sugwoo Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-13.

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Номер патента: US09496488B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

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Номер патента: US7157734B2. Автор: Chao-Yuan Su,Pei-Haw Tsao,Chender Huang,Shang-Yu Hou,Chia-Hsiung Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2007-01-02.

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Номер патента: CA1135856A. Автор: Jan Lohstroh. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1982-11-16.

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Номер патента: US20240332455A1. Автор: Min-Hsun Hsieh. Владелец: Epistar Corp. Дата публикации: 2024-10-03.

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Номер патента: US20130299785A1. Автор: Baek Jong-In,KIM Ki-Seo,Mok Rang-Kyun. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2013-11-14.

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Номер патента: KR100718267B1. Автор: 김명곤,임동현,배병재,임지은,유동철. Владелец: 삼성전자주식회사. Дата публикации: 2007-05-14.

Method of manufacturing semiconductor integrated circuit device having capacitor element

Номер патента: US20080061381A1. Автор: Naotaka Hashimoto,Shuji Ikeda,Yutaka Hoshino. Владелец: Individual. Дата публикации: 2008-03-13.

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Номер патента: US7598558B2. Автор: Naotaka Hashimoto,Shuji Ikeda,Yutaka Hoshino. Владелец: Renesas Technology Corp. Дата публикации: 2009-10-06.

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Номер патента: US5471083A. Автор: Tatsuhiko Ikeda,Kazuhito Niwano. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-11-28.

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Номер патента: US20070058068A1. Автор: Kenzo Fukuyoshi,Keisuke Ogata,Mitsuhiro Nakao,Tadashi Ishimatsu,Akiko Uchibori. Владелец: Toppan Printing Co Ltd. Дата публикации: 2007-03-15.

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Номер патента: EP1759414A1. Автор: Kenzo c/o TOPPAN PRINTING CO. LTD FUKUYOSHI,Tadashi c/o TOPPAN PRINTING CO. LTD ISHIMATSU,Keisuke c/o TOPPAN PRINTING CO. LTD OGATA,Mitsuhiro c/o TOPPAN PRINTING CO. LTD NAKAO,Akiko c/o TOPPAN PRINTING CO. LTD. UCHIBORI. Владелец: Toppan Printing Co Ltd. Дата публикации: 2007-03-07.

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Номер патента: WO2006001317B1. Автор: Kenzo Fukuyoshi,Keisuke Ogata,Mitsuhiro Nakao,Tadashi Ishimatsu,Akiko Uchibori. Владелец: Akiko Uchibori. Дата публикации: 2006-04-06.

Method of manufacturing capacitor of semiconductor device having high dielectric constant dielectric film

Номер патента: KR19990075997A. Автор: 이병택,이기훈. Владелец: 윤종용. Дата публикации: 1999-10-15.

Interdigitated capacitor and method of manufacturing thereof

Номер патента: US6740922B2. Автор: Yiu-Huen Wong,Christopher D. W. Jones,Donald W. Murphy. Владелец: Agere Systems LLC. Дата публикации: 2004-05-25.

Conductive film, method of manufacturing the same, semiconductor device and method of manufacturing the same

Номер патента: US20110095419A1. Автор: Yuichi Matsuda,Michio Horiuchi,Tsuyoshi Kobayashi,Tatsuaki Denda,Yasue Tokutake. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2011-04-28.

Semiconductor device having an optical device degradation sensor

Номер патента: EP4166957A1. Автор: Hans Reisinger,Thomas Aichinger,Andre Kabakow,Maximilian Wolfgang FEIL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-04-19.

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Номер патента: US11940489B2. Автор: Hans Reisinger,Thomas Aichinger,Andre Kabakow,Maximilian Wolfgang FEIL. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-03-26.

Method of manufacturing nitride semiconductor device

Номер патента: US11984528B2. Автор: Toshihiko KISHINO. Владелец: Nichia Corp. Дата публикации: 2024-05-14.

Semiconductor device having a capacitor and a fabrication method thereof

Номер патента: US20060186453A1. Автор: Won-mo Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-08-24.

Solution, method of forming resist pattern, and semiconductor device manufacturing method

Номер патента: US11822250B2. Автор: Hiroyuki Iida,Masaharu Nakamura,Motoki Takahashi. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2023-11-21.

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Номер патента: US20200301283A1. Автор: Hiroyuki Iida,Masaharu Nakamura,Motoki Takahashi. Владелец: Tokyo Ohka Kogyo Co Ltd. Дата публикации: 2020-09-24.

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Номер патента: US20130113113A1. Автор: BAE Ki-Soon,Choi Sei-Ryung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-05-09.

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Номер патента: US20130323864A1. Автор: Kim Jin-su,Mo Jae-Bum,Kim Byoung-Joo. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-12-05.

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Номер патента: US20140077187A1. Автор: Hyun-Shik LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-03-20.

Image Sensor Devices, Methods of Manufacture Thereof, and Semiconductor Device Manufacturing Methods

Номер патента: US20150171132A1. Автор: Chen Szu-Ying,Yaung Dun-Nian,Liu Jen-Cheng,Lin Jeng-Shyan,Tsai Shu-Ting,CHEN U-Ting. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2015-06-18.

MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE AND MANAGEMENT METHOD OF MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE

Номер патента: US20160204040A1. Автор: SHIOBARA Eishi. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2016-07-14.

Method of manufacturing stack-type semiconductor device and method of manufacturing stack-type electronic component

Номер патента: CN1841688A. Автор: 芳村淳,大久保忠宣. Владелец: Toshiba Corp. Дата публикации: 2006-10-04.

Structure and method of forming a multiple leadframe semiconductor device

Номер патента: TW200306657A. Автор: James Howard Knapp,Stephen St Germain. Владелец: Semiconductor Components Ind. Дата публикации: 2003-11-16.

Circuit board, method of producing the circuit board and display device having the circuit board

Номер патента: TW200603219A. Автор: Tadahiro Ohmi,Teruhiko Suzuki,Keiichi Nii,Takeyoshi Kato. Владелец: Zeon Corp. Дата публикации: 2006-01-16.

Method of making thermo compression bonded semiconductor device

Номер патента: AU3497371A. Автор: FUJIWARA Shohei. Владелец: Matsushita Electronics Corp. Дата публикации: 1973-05-03.

Method of making thermo compression bonded semiconductor device

Номер патента: AU454608B2. Автор: FUJIWARA Shohei. Владелец: Matsushita Electronics Corp. Дата публикации: 1974-10-31.

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Номер патента: US20180019434A1. Автор: KIM Sangyeol,JEON Woosik,KIM Jungyeon,Park Ilseok,Jang Byeongmin,Cho Junkyung. Владелец: . Дата публикации: 2018-01-18.

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Номер патента: US20190181076A1. Автор: ZIGLIOLI Federico Giovanni,CREMA Paolo,VITELLO Dario,MARCHISI Fabio,ARRIGONI Alberto,FREGO Federico. Владелец: . Дата публикации: 2019-06-13.

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Номер патента: US20180204894A1. Автор: Jang Jin-Hee,KIM SeJune,LEE SoJung. Владелец: LG DISPLAY CO., LTD.. Дата публикации: 2018-07-19.

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Номер патента: US20150263212A1. Автор: Uya Shinji,KAGEYAMA Mokuji,TANAKA Nagataka,NUMATA Hideo. Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2015-09-17.

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Номер патента: US20160315098A1. Автор: WOO Su Wan,IM Wan Soon. Владелец: . Дата публикации: 2016-10-27.

stacked package, method of manufacturing the same, and digital device having the stacked package

Номер патента: KR101473313B1. Автор: 김태훈,김상욱,권흥규. Владелец: 삼성전자주식회사. Дата публикации: 2014-12-17.

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Номер патента: KR101158903B1. Автор: 이상훈,김성만,강신택,기동현. Владелец: 삼성전자주식회사. Дата публикации: 2012-06-25.

Image sensor, method of manufacturing the same, and imaging device having image sensor mounted thereon

Номер патента: CN113169204A. Автор: 徐泽,肖�琳,周雪梅. Владелец: SZ DJI Technology Co Ltd. Дата публикации: 2021-07-23.

Display substrate, method of manufacturing the same and display device having the same

Номер патента: US20080203392A1. Автор: Hyun-Young Kim,Kwan-Wook Jung,Seung-Gyu Tae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-08-28.

Display substrate, method of manufacturing the same and display device having the same

Номер патента: US7851835B2. Автор: Sang-Hoon Lee,Sung-Man Kim,Dong-Hyeon Ki,Shin-Tack Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-12-14.

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Номер патента: US20210234068A1. Автор: Lell Alfred,Vierheilig Clemens,König Harald,Ebbecke Jens,Gerhard Sven. Владелец: . Дата публикации: 2021-07-29.

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Номер патента: US20200295236A1. Автор: Cui Hailing,Pindl Markus. Владелец: OSRAM OLED GmbH. Дата публикации: 2020-09-17.

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Номер патента: US20190348568A1. Автор: Lell Alfred,Vierheilig Clemens,König Harald,Ebbecke Jens,Gerhard Sven. Владелец: . Дата публикации: 2019-11-14.

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Номер патента: KR100729231B1. Автор: 김석필,임동현,배병재,임지은,유동철. Владелец: 삼성전자주식회사. Дата публикации: 2007-06-15.

Method of manufacturing capacitor of semiconductor device

Номер патента: KR102307061B1. Автор: 김현준,김선호,김봉현,박영근,서종범,안세형,안창무. Владелец: 삼성전자주식회사. Дата публикации: 2021-10-05.

Method of manufacturing capacitor of semiconductor device _

Номер патента: KR100277847B1. Автор: 황정모. Владелец: 현대반도체 주식회사. Дата публикации: 2001-04-02.

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Номер патента: KR100752642B1. Автор: 홍창기,김상용,심우관,최상준,오정민. Владелец: 삼성전자주식회사. Дата публикации: 2007-08-29.

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Номер патента: JP2012512556A. Автор: マリー ブーレイ、ジャン,ガンナム、アヤッド. Владелец: NXP USA Inc. Дата публикации: 2012-05-31.

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Номер патента: EP0589524A3. Автор: Rudolf Paulus Tijburg,Hermanus Antonius Van De Pas,Johannes Antonius De Poorter. Владелец: Philips Electronics NV. Дата публикации: 1994-04-20.

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Номер патента: JP2023071690A. Автор: Cui Hailing,Pindl Markus,マルクス ピンドル,ハイリング キュイ. Владелец: OSRAM OLED GmbH. Дата публикации: 2023-05-23.

Semiconductor device and a method of manufacturing such a semiconductor device

Номер патента: EP0487739A1. Автор: Koji KATO. Владелец: Ramtron International Corp. Дата публикации: 1992-06-03.

Method of manufacturing an optoelectronic semiconductor device and semiconductor device

Номер патента: JP6204600B2. Автор: ルッツ ヘッペル. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2017-09-27.

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Номер патента: US7118972B2. Автор: Masaaki Shinohara,Takashi Aoyama,Kozo Watanabe,Fukuo Owada. Владелец: Renesas Technology Corp. Дата публикации: 2006-10-10.

Method of manufacturing capacitor of semiconductor device

Номер патента: KR101152821B1. Автор: 김진웅,이종민,김찬배,정채오,이효석,민성규. Владелец: 에스케이하이닉스 주식회사. Дата публикации: 2012-06-12.

Semiconductor device comprising an electrically erasable programmable read only memory and a flash-erasable programmable read only memory, and method of manufacturing such a semiconductor device

Номер патента: TW529160B. Автор: Johannes Dijkstra,Guido Jozef Maria Dormans,Robertus Dominicus Jos Verhaar. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2003-04-21.

An optical semiconductor device and method of manufacturing an optical semiconductor device

Номер патента: DE102005000800A1. Автор: Shin Kawasaki Sakamoto,Isao Kitakyushu Ogawa,Hideo Yokohama Tamura. Владелец: Toshiba Corp. Дата публикации: 2005-08-04.

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Номер патента: US20050269931A1. Автор: Sang-Yu Lee,In-Sun Hwang,Joong-Hyun Kim,Hae-Soo Ha. Владелец: Samsung Corning Co Ltd. Дата публикации: 2005-12-08.

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Номер патента: US20140346975A1. Автор: Jae-Woo Kim,Jin-woo Jeong,Yoon-Ho Song,Jun-Tae KANG. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2014-11-27.

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Номер патента: EP3870732A2. Автор: Vasil Vorsa,Alexandru Pavel. Владелец: Greene Tweed Technologies Inc. Дата публикации: 2021-09-01.

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Номер патента: WO1996033537A3. Автор: Roijen Raymond Van,Petrus Johannes Adrianus Thijs,Gestel Patrick Henricus Van. Владелец: Philips Norden Ab. Дата публикации: 1996-12-27.

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Номер патента: KR101488482B1. Автор: 이상영,송현곤,김주명. Владелец: 국립대학법인 울산과학기술대학교 산학협력단. Дата публикации: 2015-02-02.

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Номер патента: US20230352776A1. Автор: Hung-Chun Ma,Hai-Peng Yan,Fuh-Feng Tang,Ching-Sheng Sun. Владелец: Fuyu Precision Components Kunshan Co ltd. Дата публикации: 2023-11-02.

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Номер патента: US20190081315A1. Автор: Morin Brian G.,Hu Carl C.. Владелец: . Дата публикации: 2019-03-14.

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Номер патента: KR101576277B1. Автор: 박수진,이상영,이정인,최근호,김세희,최신호. Владелец: 국립대학법인 울산과학기술대학교 산학협력단. Дата публикации: 2015-12-09.

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Номер патента: KR101490294B1. Автор: 이상영,김주명,박장훈. Владелец: 국립대학법인 울산과학기술대학교 산학협력단. Дата публикации: 2015-02-06.

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Номер патента: US10700339B2. Автор: Brian G. Morin,Carl C. HU. Владелец: Sateria Battery Innovation Group Inc. Дата публикации: 2020-06-30.

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Номер патента: US20210218229A1. Автор: Lauer Christian,HALBRITTER Hubert,JENTZSCH Bruno,Falck Thomas,Russell Ann,Fuchs Peter. Владелец: . Дата публикации: 2021-07-15.

Semiconductor device for generating an electron beam and method of manufacturing such a semiconductor device.

Номер патента: NL184589C. Автор: . Владелец: Philips Nv. Дата публикации: 1989-09-01.

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Номер патента: US11737287B2. Автор: Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

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Номер патента: US12016234B2. Автор: Ke Liu,Jie Li,Xiaoqi Ding,Jiali WANG,Guoyi Cui,Xinlei YANG. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-06-18.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US11864477B2. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Method of fabricating a micro-electromechanical fluid ejection device having enhanced actuator strength

Номер патента: US20050055829A1. Автор: Kia Silverbrook. Владелец: SILVERBROOK RESEARCH PTY LTD. Дата публикации: 2005-03-17.

Method of forming superconducting functional elements of electronic devices having regions with different values of critical current density

Номер патента: RU2694800C1. Автор: Борис Аронович Гурович,Евгения Анатольевна Кулешова,Кирилл Евгеньевич Приходько,Леонид Вячеславович Кутузов,Александр Григорьевич Домантовский. Владелец: Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт". Дата публикации: 2019-07-16.

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Номер патента: US10410332B2. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-10.

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Номер патента: US20180012348A1. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-11.

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Номер патента: US9514392B2. Автор: Young-cheul Wee,Young-Hoon Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-06.

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Номер патента: US20240090354A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

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Номер патента: US20070120121A1. Автор: Jung Lee,Nak Choi,Jong Park,Hyo Lee,Gyeong Bang. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2007-05-31.

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Номер патента: US20060113526A1. Автор: Hiroki Maeda,Junichi Hanna,Hiroaki Iino. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2006-06-01.

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Номер патента: US4167806A. Автор: Pierre Kumurdjian. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1979-09-18.

Methods of correcting data errors and semiconductor devices used therein

Номер патента: US20170371746A1. Автор: Chang Hyun Kim. Владелец: SK hynix Inc. Дата публикации: 2017-12-28.

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Номер патента: US6500683B1. Автор: Masakazu Nakabayashi,Tadayuki Yoshiyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-12-31.

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Номер патента: US09830038B2. Автор: Youn-Gu Lee,Bo-Sung Kim,Kyu-Young Kim,Nam-Ok Jung. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-11-28.

Semiconductor device, and programming method and programming system therefor

Номер патента: US8106681B2. Автор: Tadashi Fujita. Владелец: Renesas Electronics Corp. Дата публикации: 2012-01-31.

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Номер патента: US11871684B2. Автор: Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2024-01-09.

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Номер патента: US12094411B2. Автор: Rongrong Li,Mancheng ZHOU. Владелец: Chongqing HKC Optoelectronics Technology Co Ltd. Дата публикации: 2024-09-17.

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Номер патента: CN103390729A. Автор: 白种仁,金基栖,睦朗均. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-11-13.

Semiconductor devices

Номер патента: US20240324186A1. Автор: Kiseok LEE,Chansic Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-26.

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Номер патента: US20130344766A1. Автор: Ahn Yi-Joon,Park Won-Sang,Baek Jong-In,KIM Ki-Seo. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2013-12-26.

Component Carrier and Method of Manufacturing the Same

Номер патента: US20200296842A1. Автор: Thomas KRISTL,Ewald Moitzi. Владелец: AT&S Austria Technologie und Systemtechnik AG. Дата публикации: 2020-09-17.

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Номер патента: US11871604B2. Автор: Seung Kim,Byunghoon Kang,Seungho KIM,Gyuin SHIM. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-01-09.

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Номер патента: US20160098130A1. Автор: Youn-Gu Lee,Bo-Sung Kim,Kyu-Young Kim,Nam-Ok Jung. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-04-07.

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Номер патента: KR20110014311A. Автор: 이승훈,이정환,윤해영,김휘,정경호,김희섭. Владелец: 삼성전자주식회사. Дата публикации: 2011-02-11.

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Номер патента: EP3273499A1. Автор: Ilseok Park,Sangyeol Kim,Jungyeon Kim,Byeongmin Jang,Woosik Jeon,Junkyung Cho. Владелец: Samsung Display Co Ltd. Дата публикации: 2018-01-24.

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Номер патента: KR100612854B1. Автор: 김태완,박상진,김영근,황인준,박완준,권순주,감비노리차드제이.. Владелец: 삼성전자주식회사. Дата публикации: 2006-08-21.

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Номер патента: US20100029040A1. Автор: Akihiro Nomoto. Владелец: Sony Corp. Дата публикации: 2010-02-04.

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Номер патента: US8279362B2. Автор: Seung-Hoon Lee,Hee-Seop Kim,Hae-Young Yun,Kyung-Ho Jung,Hwi Kim,Jung-Hwan Yi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-10-02.

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Номер патента: US20230309293A1. Автор: Yoosang Hwang,Manbok Kim,Chulkwon Park,Keunnam Kim,Hyosub Kim,Soojeong Kim,Seungbae Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

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Номер патента: TW202243204A. Автор: 林毓超,邱榮標. Владелец: 台灣積體電路製造股份有限公司. Дата публикации: 2022-11-01.

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Номер патента: US20080256496A1. Автор: Hiroshi Watanabe,Toshitake Yaegashi,Shigeyuki Takagi,Shigeru Kinoshita. Владелец: Toshiba Corp. Дата публикации: 2008-10-16.

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Номер патента: US09625765B2. Автор: Satoshi Hasegawa,Yoichi Momose. Владелец: Seiko Epson Corp. Дата публикации: 2017-04-18.

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Номер патента: US09599861B2. Автор: Satoshi Hasegawa,Yoichi Momose. Владелец: Seiko Epson Corp. Дата публикации: 2017-03-21.

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Номер патента: US09557608B2. Автор: Satoshi Hasegawa,Yoichi Momose. Владелец: Seiko Epson Corp. Дата публикации: 2017-01-31.

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Номер патента: WO2004063813A1. Автор: Nobuo Takeda,Ikuo Nishimoto,Ichitaroh Satoh. Владелец: YAMATAKE CORPORATION. Дата публикации: 2004-07-29.

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Номер патента: US20240289570A1. Автор: Hiroshi Miyoshi,Noriyuki Yabuoshi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-08-29.

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Номер патента: US09711205B2. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-18.

Pattern correcting method of mask for manufacturing a semiconductor device

Номер патента: US20080212869A1. Автор: Koji Hashimoto,Satoshi Usui,Kei Yoshikawa. Владелец: Toshiba Corp. Дата публикации: 2008-09-04.

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Номер патента: US20240310045A1. Автор: Christian Bauer,Jörgen van KOPPEN. Владелец: Truma Geraetetechnik GmbH and Co KG. Дата публикации: 2024-09-19.

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Номер патента: US09958495B2. Автор: Young Hoe Cheon,Chan Seok Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-01.

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Номер патента: WO2009156404A2. Автор: François-Xavier Marseille,Michel Thill. Владелец: GEMALTO SA. Дата публикации: 2009-12-30.

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Номер патента: US20020045280A1. Автор: Keith Strickland,Arshad Madni,Lance Trodd,Chris Powell. Владелец: Zarlink Semiconductor Ltd. Дата публикации: 2002-04-18.

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Номер патента: US20050232064A1. Автор: Yin Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-10-20.

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Номер патента: US09798498B2. Автор: Hyun Seok Kim,Young Jin Cho,Seong Jun Ahn,Jae Geun Park,Seong Nam KWON,Mi Hyang LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-24.

Method of manufacture of liquid crystal display device having characteristics which differ locally

Номер патента: US6051444A. Автор: Toshimi Watanabe,Takehiko Ueda,Toru Iwane,Itaru Homma. Владелец: Nikon Corp. Дата публикации: 2000-04-18.

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Номер патента: EP1980898A3. Автор: Hye-Young Ryu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-01-21.

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Номер патента: US4152469A. Автор: Richard E. Allen,Peter R. Segatto. Владелец: Corning Glass Works. Дата публикации: 1979-05-01.

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Номер патента: US20160196209A1. Автор: Jungug Kim. Владелец: SK hynix Inc. Дата публикации: 2016-07-07.

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Номер патента: US20160104522A1. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-14.

Method of operating memory controller and methods for devices having the same

Номер патента: US20150363338A1. Автор: Hyun Seok Kim,Young Jin Cho,Seong Jun Ahn,Jae Geun Park,Seong Nam KWON,Mi Hyang LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-12-17.

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Номер патента: EP2304556A2. Автор: François-Xavier Marseille,Michel Thill. Владелец: GEMALTO SA. Дата публикации: 2011-04-06.

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Номер патента: US20080241489A1. Автор: Takeo Ishibashi,Mamoru Terai,Atsumi Yamaguchi,Takuya Hagiwara. Владелец: Renesas Technology Corp. Дата публикации: 2008-10-02.

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Номер патента: US6352800B1. Автор: Toshifumi Suganaga. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-03-05.

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Номер патента: US20180102183A1. Автор: Young Bo Shim. Владелец: SK hynix Inc. Дата публикации: 2018-04-12.

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Номер патента: RU2677500C1. Автор: Гасан Абакарович Мустафаев,Асламбек Идрисович Хасанов,Руслан Азаевич Кутуев,Арслан Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет". Дата публикации: 2019-01-17.

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Номер патента: US20070103624A1. Автор: Jae-Hyun Kim,Jong-Seong Kim,Sung-Hwan Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-05-10.

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Номер патента: RU2666917C1. Автор: Сергей Николаевич Макаров,Николай Николаевич Петров,Сергей Баянович Фахретдинов,Марат Константинович Тен. Владелец: Акционерное общество "Делан". Дата публикации: 2018-09-13.

Display substrate, method of manufacturing the same and display device having the same

Номер патента: US20090217521A1. Автор: Yong-Ho Yang. Владелец: Individual. Дата публикации: 2009-09-03.

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Номер патента: US20240301240A1. Автор: Sangwon Lee,Hyuk-Hwan Kim,Jae Sul An,Jonghwan Cho. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-09-12.

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Номер патента: US20240202424A1. Автор: Bok-yeon Won,Jichang SIM,Ohhun KWON,Hyuckjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-20.

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Номер патента: US20240278295A1. Автор: Ker-Hsun LIAO,Yi-Chen Ho,Chih Ping Liao,Chi-Hsun Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

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Номер патента: US20230277800A1. Автор: Karen Crow,Matt SANDERS. Владелец: Neurogeneces Inc. Дата публикации: 2023-09-07.

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Номер патента: US20180101093A1. Автор: Lixuan Chen,Yungjui LEE. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-04-12.

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Номер патента: US20110029936A1. Автор: Suk-joo Lee,Seong-Woon Choi,Kyoung-Yun Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-02-03.

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Номер патента: US20140146254A1. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-05-29.

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Номер патента: US20220308380A1. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2022-09-29.

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Номер патента: US20210103172A1. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2021-04-08.

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Номер патента: US9494811B2. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-11-15.

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Номер патента: US8643812B2. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-02-04.

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Номер патента: US11803073B2. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2023-10-31.

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Номер патента: US20130193536A1. Автор: ARAI Koichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-08-01.

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Номер патента: US20170059911A1. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-03-02.

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Номер патента: US20200057331A1. Автор: KIM Sung-Hoon,KIM Hyo-Seop,SHIN Dong-Ho,Lim Hyo-Taek,Choi Kook-Hyun,NO Sang-Yong,CHO Young-je,KIM YONG-JO. Владелец: . Дата публикации: 2020-02-20.

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Номер патента: US20140146254A1. Автор: KIM Sung-Hoon,KIM Hyo-Seop,SHIN Dong-Ho,Lim Hyo-Taek,Choi Kook-Hyun,NO Sang-Yong,CHO Young-je,KIM YONG-JO. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2014-05-29.

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Номер патента: US20210103172A1. Автор: KIM Sung-Hoon,KIM Hyo-Seop,SHIN Dong-Ho,Lim Hyo-Taek,Choi Kook-Hyun,NO Sang-Yong,CHO Young-je,KIM YONG-JO. Владелец: . Дата публикации: 2021-04-08.

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Номер патента: US20140192416A1. Автор: WANG Chan hee. Владелец: . Дата публикации: 2014-07-10.

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Номер патента: US20220308380A1. Автор: Dong-Ho Shin,Sung-Hoon Kim,Kook-Hyun Choi,Hyo-Seop Kim,Sang-Yong NO,Young-Je Cho,Hyo-Taek Lim,Yong-jo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2022-09-29.

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Номер патента: US20170185185A1. Автор: Sunghwan Kim,Kangwon Lee,Youngsik Kim,Heewoong Park,Youngseok Yoo,Jeongheon LEE,Innam LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-06-29.

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Номер патента: US20140339659A1. Автор: ARAI Koichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2014-11-20.

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Номер патента: US20140355208A1. Автор: CHANG Min-Su. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-12-04.

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Номер патента: KR101297566B1. Автор: 김시열,김상갑,오민석,김주한,최승하,진홍기,정유광. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2013-08-20.

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Номер патента: KR101519844B1. Автор: 이병준. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2015-05-13.

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Номер патента: CN101308303A. Автор: 卢水贵,尹荣男,李明姬,文智慧. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-11-19.

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Номер патента: KR101353298B1. Автор: 이명희,윤영남,문지혜,노수귀. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2014-01-20.

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Номер патента: US4441317A. Автор: Denis G. Wolfe,Naohisa Wada. Владелец: Robertshaw Controls Co. Дата публикации: 1984-04-10.

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Номер патента: EP2322975B1. Автор: Hyun-Hee Lee. Владелец: Samsung Display Co Ltd. Дата публикации: 2019-03-27.

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Номер патента: US20070026324A1. Автор: Takuji Yoshida,Toshio Araki,Nobuaki Ishiga,Hatsumi Kimura,Takahito Yamabe. Владелец: Mitsubishi Electric Corp. Дата публикации: 2007-02-01.

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Номер патента: KR20060017998A. Автор: 김진석,조국래,심이섭,최진경,백기범. Владелец: 삼성전자주식회사. Дата публикации: 2006-02-28.

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Номер патента: CN101308303B. Автор: 卢水贵,尹荣男,李明姬,文智慧. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-09-19.

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Номер патента: US20070154199A1. Автор: Young-Bee Chu. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-07-05.

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Номер патента: WO2023223048A1. Автор: Barry Peter Liversidge. Владелец: Tip-Top.Com Ltd. Дата публикации: 2023-11-23.

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Номер патента: US20240103198A1. Автор: Su-Hyoung Kang. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-03-28.

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Номер патента: US20150362834A1. Автор: Lee Sang-Hee,Choi Jin,AHN Byoung-Sup,SHIN In-Kyun. Владелец: . Дата публикации: 2015-12-17.

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Номер патента: CA1075051A. Автор: Pracheeshwar S. Mathur. Владелец: General Electric Co. Дата публикации: 1980-04-08.

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Номер патента: WO2000063956A1. Автор: Hisayoshi Yamoto,Hideo Yamanaka. Владелец: SONY CORPORATION. Дата публикации: 2000-10-26.

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Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: RU2593416C1. Автор: Сергей Владимирович Дубков,Дмитрий Геннадьевич Громов,Евгений Александрович Лебедев,Борис Николаевич Рыгалин,Алексей Сергеевич Шулятьев. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ). Дата публикации: 2016-08-10.

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Номер патента: US20120001257A1. Автор: MURAKAWA Kouichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

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Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

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Номер патента: US20120001220A1. Автор: . Владелец: SHOWA DENKO K.K.. Дата публикации: 2012-01-05.

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Номер патента: PL239947A1. Автор: Tadeusz Piotrowski,Wojciech Jung,Marek Rozental. Владелец: Inst Tech Elektronowej. Дата публикации: 1984-07-16.

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Номер патента: PL136425B1. Автор: Tadeusz Piotrowski,Wojciech Jung,Marek Rozental. Владелец: Inst Tech Elektronowej. Дата публикации: 1986-02-28.

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Номер патента: AU3333368A. Автор: TROUM and MICHEL DE BREBISSON JEANCLAUDE. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1969-08-14.

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Номер патента: AU415408B2. Автор: TROUM and MICHEL DE BREBISSON JEANCLAUDE. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1969-08-14.

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Номер патента: AU3333268A. Автор: TROUM and MICHEL DE BREBISSON JEANCLAUDE. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1969-08-14.

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Номер патента: AU417402B2. Автор: TROUM and MICHEL DE BREBISSON JEANCLAUDE. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1969-08-14.

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Номер патента: CA1033469A. Автор: Wilhelmus H.C.G. Verkuijlen. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1978-06-20.

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Номер патента: KR19980084215A. Автор: 방철원. Владелец: 현대전자산업 주식회사. Дата публикации: 1998-12-05.

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Номер патента: KR19980084216A. Автор: 김천수,문환성. Владелец: 현대전자산업 주식회사. Дата публикации: 1998-12-05.

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