Method for developing a cop resist used in x-ray lithography
Номер патента: CA1136775A
Опубликовано: 30-11-1982
Автор(ы): William D. Buckley
Принадлежит: Perkin Elmer Corp
Опубликовано: 30-11-1982
Автор(ы): William D. Buckley
Принадлежит: Perkin Elmer Corp
Реферат: ABSTRACT OF THE DISCLOSURE Apparatus and method are provided for developing a COP resist used in x-ray lithography apparatus. The lithography apparatus uses an x-ray target made of tungsten and the apparatus is operated to generate the tungsten M-line, this line being at a wavelength which will be absorbed by the resist normally used in lithography. To develop the resist, which was initially designed for use in an electron beam lithography, a developing method is used in which an initial short development with a high concentration is first carried out followed by a longer, full development with a concentration which is approximately the lowest at which complete development will take place.
Irradiation device for X-ray lithography
Номер патента: GB9508025D0. Автор: . Владелец: Jenoptik Technologie GmbH. Дата публикации: 1995-06-07.