Nonvolatile random access memory
Номер патента: AU4802693A
Опубликовано: 03-03-1994
Автор(ы): Richard M. Lienau
Принадлежит: Richard M Lienau
Опубликовано: 03-03-1994
Автор(ы): Richard M. Lienau
Принадлежит: Richard M Lienau
Реферат: A nonvolatile random access memory is disclosed having a substrate (50) carrying separate magnetically polarizable domains (19) each surrounded by a full write loop member (18) and arranged to penetrate the Hall channel (36) of a dual drain FET (16) with its residual magnetic field. The domains are organized in word rows and bit columns, are each written to by a single full write current through the surrounding loop member and each read by a comparator connected to the FET drains (42, 42'). The memory can be fabricated in a variety of forms (e.g. a planar card).
Nonvolatile random access memory
Номер патента: WO1994003899A1. Автор: Richard M. Lienau. Владелец: Lienau Richard M. Дата публикации: 1994-02-17.