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Three-dimensional memory device and method of making thereof using etch stop structures located between tiers

Номер патента: US20240138151A1
Опубликовано: 25-04-2024
Автор(ы): Bing Zhou, Monica TITUS, Raghuveer S. Makala, Rahul Sharangpani, Senaka Kanakamedala
Принадлежит: SanDisk Technologies LLC
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Three-dimensional memory device with plural channels per memory opening and methods of making the same

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Method of manufacturing three-dimensional memory device with vias connected to staircase structure

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Non-volatile three-dimensional memory cell, storage method, and chip assembly

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Method of reducing control gate electrode curvature in three-dimensional memory devices

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Three-dimensional memory device with peripheral circuit located over support pillar array and method of making thereof

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory device containing oxidation-resistant contact structures and methods of making the same

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Three-dimensional memory device with separated source-side lines and method of making the same

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Three-dimensional memory device including aluminum alloy word lines and method of making the same

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Three-dimensional memory device including aluminum alloy word lines and method of making the same

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Multi-tier three-dimensional memory device containing differential etch rate field oxides and method of making the same

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Three-dimensional memory device with dielectric isolated via structures and methods of making the same

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Three-dimensional memory device containing iii-v compound semiconductor channel and contacts and method of making the same

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Three-dimensional memory device with drain-select-level isolation structures and method of making the same

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Locally-trap-characteristic-enhanced charge trap layer for three-dimensional memory structures

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Merged cavities and buried etch stops for three-dimensional memory arrays

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Contact structures for three-dimensional memory device

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Contact structures for three-dimensional memory device

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Lateral transistors for selecting blocks in a three-dimensional memory array and methods for forming the same

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Three-dimensional memory device containing metal-organic framework inter-word line insulating layers and methods of forming the same

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Three dimensional memory array architecture

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Three-dimensional memory device including wrap around word lines and methods of forming the same

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Three-dimensional memory deivce, manufacturing method thereof, and memory system

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Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device having a heterostructure quantum well channel

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Three-dimensional memory device including a string selection line gate electrode having a silicide layer

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Three-dimensional memory device and manufacturing method thereof

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Three-dimensional memory devices and fabricating methods thereof

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Trench structures for three-dimensional memory devices

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Contact pads of three-dimensional memory device and fabrication method thereof

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Three-dimensional memory device and method for forming the same

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Staircase etch control in forming three-dimensional memory device

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Blocking oxide in memory opening integration scheme for three-dimensional memory structure

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Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same

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Three-dimensional memory device including hammerhead-shaped word lines and methods of manufacturing the same

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Three-dimensional memory device with support structures in gate line slits and methods for forming the same

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Three-dimensional memory device with deposited semiconductor plugs and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices and fabricating methods thereof

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Methods for forming three-dimensional memory devices with backside source contacts

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Three-dimensional memory device with backside source contact

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Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

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Three-dimensional memory device having multi-deck structure and methods for forming the same

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Three-dimensional memory devices

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices

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Three-dimensional memory devices

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Three-dimensional memory device with backside source contact

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory device including a mid-stack source layer and methods for forming the same

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Metal word lines for three dimensional memory devices

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Three-dimensional memory device containing heterojunction source layer and method for manufacturing the same

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Three-dimensional memory device having parallel trench type capacitor and a method of manufacturing the three-dimensional memory device

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Three-dimensional memory devices

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Three-dimensional memory device with backside source contact

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Self-aligned isolation dielectric structures for a three-dimensional memory device

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Metal word lines for three dimensional memory devices

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Three-dimensional memory device including a dummy word line with tapered corner and method of making the same

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Three-dimensional memory device including a mid-stack source layer and methods for forming the same

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Three-dimensional memory devices and methods for forming the same

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Three-dimensional memory devices

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Three-dimensional memory device including a dummy word line with tapered corner and method of making the same

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Three-dimensional memory device including a metal oxide etch stop layer and methods for forming the same

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Three-dimensional memory device including metal silicide source regions and methods for forming the same

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Three-dimensional memory device including coaxial double contact via structures and methods for forming the same

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Three dimensional memory device and method for fabricating the same

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Three-dimensional memory devices and fabricating methods thereof

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Three-dimensional memory devices having channel cap structures and methods for forming the same

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Alternating refractive index in charge-trapping film in three-dimensional memory

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Three dimensional memory array architecture

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Three dimensional memory array architecture

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Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

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Three-dimensional memory device including discrete charge storage elements and methods of making thereof

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Three-dimensional memory device having pocket structure in memory string and method for forming the same

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Joint opening structures of three-dimensional memory devices and methods for forming the same

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Temperature warning device and temperature warning method of friction element

Номер патента: US09897202B2. Автор: Takeshi Yamamoto,Hidetoshi Tsukidate,Kenichi Ooshima. Владелец: Nissan Motor Co Ltd. Дата публикации: 2018-02-20.

Methods of modifying methylcytosine or derivative thereof using a nucleophilic molecule, and methods of using the same to detect the methylcytosine or derivative thereof in a polynucleotide

Номер патента: WO2024042217A1. Автор: Elena CRESSINA,Carole ANASTASI,Mykhailo VYBORNYI. Владелец: Illumina, Inc.. Дата публикации: 2024-02-29.

Rack-mounted column, pouring device and temperature control method of drink

Номер патента: RU2493509C2. Автор: Барт Ян Бакс. Владелец: Хейнекен Сеплай Чейн Б.В.. Дата публикации: 2013-09-20.

Three-dimensional memory device including a source structure surrounded by inner sidewalls of vertical semiconductor channels and methods of forming the same

Номер патента: WO2024205709A1. Автор: Takaaki IWAI,Shinsuke YADA,Teruo OKINA,Yuki FUKUSHIGE. Владелец: Sandisk Technologies Llc.. Дата публикации: 2024-10-03.

BATTERY CHARGER, VOLTAGE MONITORING DEVICE AND SELF-DIAGNOSIS METHOD OF REFERENCE VOLTAGE CIRCUIT

Номер патента: US20120001588A1. Автор: . Владелец: OKI SEMICONDUCTOR CO., LTD.. Дата публикации: 2012-01-05.

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