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Semiconductor device and manufacturing method for the same

Номер патента: US20230215765A1
Опубликовано: 06-07-2023
Автор(ы): Chih-Nan Lo, Hsin-Hsien Lu, Kuo-Bin Huang, Ming-Chi Huang, Ming-Hsi Yeh
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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