Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

  • Главная
  • Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Номер патента: US20200219727A1
Опубликовано: 09-07-2020
Автор(ы): HIROSHI Ashihara, Motomu DEGAI
Принадлежит: Kokusai Electric Corp
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Method of forming a nano-FET semiconductor device

Номер патента: US12040382B2. Автор: Yee-Chia Yeo,Sen-Hong Syue,Huicheng Chang,Yi-Rui Chen,Wen-Kai Lin,Chen-Fong Tsai,Li-Chi Yu,Yoh-Rong Liu,Cheng-I Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Method of forming a nano-fet semiconductor device

Номер патента: US20240332401A1. Автор: Yee-Chia Yeo,Sen-Hong Syue,Huicheng Chang,Yi-Rui Chen,Wen-Kai Lin,Chen-Fong Tsai,Li-Chi Yu,Yoh-Rong Liu,Cheng-I Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Method of manufacturing semiconductor device, cleaning method, substrate processing apparatus and non-transitory computer-readable recording medium

Номер патента: KR101403389B1. Автор: 마사유키 아사이. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2014-06-03.

Method of fabricating gate oxide of semiconductor device

Номер патента: US20190096682A1. Автор: Yasutoshi Okuno,Andrew Joseph Kelly,Yusuke Oniki,Ta-Chun Ma. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-03-28.

Method of forming metal silicide layer, semiconductor device and method of fabricating same

Номер патента: US10490647B1. Автор: Yugui Zhang,Jianzhi Fang,Kangjun Peng,Qunzheng Lin. Владелец: Nexchip Semiconductor Corp. Дата публикации: 2019-11-26.

Low cost method of fabricating shallow junction, Schottky semiconductor devices

Номер патента: US5635414A. Автор: Jun Wu,Joseph Chan,Gregory Zakaluk,Dennis Garbis,Willem Einthoven,Jack Eng,John Amato. Владелец: Individual. Дата публикации: 1997-06-03.

Semiconductor device production method, substrate processing method, substrate processing device, and recording medium

Номер патента: EP4401113A1. Автор: Arito Ogawa,Koei KURIBAYASHI. Владелец: Kokusai Electric Corp. Дата публикации: 2024-07-17.

Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium

Номер патента: KR101061675B1. Автор: 히데노리 미요시. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2011-09-01.

Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium

Номер патента: JPWO2007111126A1. Автор: 秀典 三好,三好　秀典. Владелец: Tokyo Electron Ltd. Дата публикации: 2009-08-13.

Method of Manufacturing Semiconductor Device, Cleaning Method, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium

Номер патента: US20130102161A1. Автор: Masayuki Asai. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2013-04-25.

Method of cleaning thin film forming apparatus, thin film forming method, thin film forming apparatus and non-transitory recording medium

Номер патента: US09920424B2. Автор: Ryota Goto,Rintaro TAKAO. Владелец: Tokyo Electron Ltd. Дата публикации: 2018-03-20.

Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and recording medium

Номер патента: JPWO2013141370A1. Автор: 優幸 浅井,敦 佐野,浅井　優幸,雅広 米林. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2015-08-03.

Method of Forming Gate Insulating Film, Semiconductor Device and Computer Recording Medium

Номер патента: US20070290247A1. Автор: Yoshihiro Sato,Toshio Nakanishi,Yutaka Fujino,Tatsuo Nishita,Shuuichi Ishizuka. Владелец: Tokyo Electron Ltd. Дата публикации: 2007-12-20.

Method of forming gate insulation film, semiconductor device, and computer recording medium

Номер патента: US20100130023A1. Автор: Yoshihiro Sato,Toshio Nakanishi,Yutaka Fujino,Tatsuo Nishita,Shuuichi Ishizuka. Владелец: Tokyo Electron Ltd. Дата публикации: 2010-05-27.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20170200805A1. Автор: Manabu Takei. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-07-13.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09716159B1. Автор: Manabu Takei. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-07-25.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12080762B2. Автор: Makoto Utsumi,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-09-03.

Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures

Номер патента: US20230420536A1. Автор: Sei-Hyung Ryu,Rahul R. Potera,Madankumar Sampath. Владелец: Wolfspeed Inc. Дата публикации: 2023-12-28.

METHOD OF CLEANING THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, THIN FILM FORMING APPARATUS AND NON-TRANSITORY RECORDING MEDIUM

Номер патента: US20140187053A1. Автор: Takao Rintaro,GOTO Ryota. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2014-07-03.

Method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: SG10202100887YA. Автор: Arito Ogawa,Atsuro Seino,Koei KURIBAYASHI. Владелец: Kokusai Electric Corp. Дата публикации: 2021-08-30.

Method of manufacturing semiconductor device having higher exhaust pipe temperature and non-transitory computer-readable recording medium

Номер патента: US11201054B2. Автор: Noriyuki Isobe. Владелец: Kokusai Electric Corp. Дата публикации: 2021-12-14.

Methods of Forming Contact Features in Semiconductor Devices

Номер патента: US20210280426A1. Автор: Mei-Yun Wang,Fu-Kai Yang,Chen-Ming Lee,Chen-Hung Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-09-09.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09941362B2. Автор: Masayuki Miyazaki,Hidenao Kuribayashi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-04-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240290842A1. Автор: Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-08-29.

Method of Forming a Super Junction Semiconductor Device Having Stripe-Shaped Regions of the Opposite Conductivity Types

Номер патента: US20160104768A1. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-04-14.

Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types

Номер патента: US09484400B2. Автор: Markus Schmitt,Hans Weber,Rolf Weis,Franz Hirler,Armin Willmeroth,Thomas Wahls. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-11-01.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210328025A1. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-10-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11929400B2. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-03-12.

Method of forming gate electrode in semiconductor device

Номер патента: US20040259369A1. Автор: Cha Dong,Ho Son. Владелец: Individual. Дата публикации: 2004-12-23.

Method of forming gate pattern and semiconductor device

Номер патента: US20120276727A1. Автор: QIYANG He,YIYING Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2012-11-01.

Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device

Номер патента: US10903352B2. Автор: Katsunori Ueno,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-01-26.

Method of manufacturing nitride semiconductor device

Номер патента: US20170092493A1. Автор: Tohru Oka,Takahiro Fujii,Masayoshi Kosaki,Takaki Niwa. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 2017-03-30.

Method of forming gate line of semiconductor device

Номер патента: US20100048014A1. Автор: Chang Ki Park. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-02-25.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer-readable recording medium

Номер патента: US20160305017A1. Автор: Tsuyoshi Takeda,Arito Ogawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-10-20.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer-readable recording medium

Номер патента: US09745656B2. Автор: Tsuyoshi Takeda,Arito Ogawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-08-29.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer-readable recording medium

Номер патента: US09406520B2. Автор: Tsuyoshi Takeda,Arito Ogawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-08-02.

Method of making a vertical gate semiconductor device

Номер патента: EP1535342A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2005-06-01.

Method of making a vertical gate semiconductor device

Номер патента: WO2004017414A1. Автор: Gordon M. Grivna. Владелец: Semiconductor Components Industries L.L.C.. Дата публикации: 2004-02-26.

Method of manufacturing III-nitride semiconductor devices

Номер патента: US6486050B1. Автор: Ching-ting Lee. Владелец: Opto Tech Corp. Дата публикации: 2002-11-26.

Method of forming contacts to a semiconductor device

Номер патента: CA2011235A1. Автор: Kathleen A. Perry,San-Mei Ku. Владелец: International Business Machines Corp. Дата публикации: 1990-11-15.

Method of Fabricating Landing Plug in Semiconductor Device

Номер патента: US20100330801A1. Автор: Kyoung Bong Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-30.

Method of forming metal contact for semiconductor device

Номер патента: US11715763B2. Автор: Sung-Li Wang,Yasutoshi Okuno,Mrunal A. Khaderbad. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-01.

Method of Manufacturing Semiconductor Device, Cleaning Method, Substrate Processing Apparatus and Non-Transitory Computer Readable Recording Medium

Номер патента: US20130260566A1. Автор: Yamazaki Hirohisa. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2013-10-03.

Method of manufacturing semiconductor device, cleaning method, substrate processing apparatus and non-transitory computer readable recording medium

Номер патента: KR20150001708A. Автор: 히로히사 야마자키. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2015-01-06.

Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

Номер патента: US09825145B2. Автор: Haruo Nakazawa,Yasukazu Seki,Kenichi Iguchi,Koh Yoshikawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-11-21.

Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: EP4160659A1. Автор: KIMIHIKO Nakatani,Yuki Yamakado,Yasutoshi Tsubota. Владелец: Kokusai Electric Corp. Дата публикации: 2023-04-05.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11469303B2. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-10-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12046642B2. Автор: Shinji Fujikake. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-23.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220231128A1. Автор: Shinji Fujikake. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-07-21.

Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures

Номер патента: US20130292647A1. Автор: Prashant Raghu,Ian C. Laboriante. Владелец: Micron Technology Inc. Дата публикации: 2013-11-07.

Method of manufacturing transistor and semiconductor device including the same

Номер патента: US09530848B2. Автор: Moon Sik SEO. Владелец: SK hynix Inc. Дата публикации: 2016-12-27.

Methods of forming conductive elements of semiconductor devices and of forming memory cells

Номер патента: US09865812B2. Автор: Nishant Sinha,Scott E. Sills,Sanh D. Tang,Whitney L. West,Rob B. Goodwin. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

Method of fabricating a metal gate semiconductor device

Номер патента: US20130260547A1. Автор: Ming Zhu,Bao-Ru Young,Hak-Lay Chuang,Sheng-Chen Chung,Jyun-Ming Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-03.

Method of forming complementary metal oxide semiconductor device with work function layer

Номер патента: US09721840B2. Автор: Chien-Chung Huang,Yu-Ping Wang,Chien-Ming Lai,Ya-Huei Tsai,Yu-Ting Tseng. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180090320A1. Автор: Mitsuo Okamoto,Takashi Tsutsumi,Kenji Fukuda,Masaki Miyazato,Youichi Makifuchi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-03-29.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2667247A1. Автор: Takeyoshi Masuda,Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-05-08.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20230154999A1. Автор: Hidemoto Tomita. Владелец: Mirise Technologies Corp. Дата публикации: 2023-05-18.

Method of manufacturing and inspecting semiconductor devices

Номер патента: CA2126292A1. Автор: Takashi Iwasaki,Yasuhiro Iguchi,Nobuhisa Tanaka,Shun-Ichi Yoneyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1994-12-24.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210217852A1. Автор: Makoto Utsumi,Masaki Miyazato. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-07-15.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200144371A1. Автор: Takeshi Tawara,Mina OHSE. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-07.

Method of forming metal line in semiconductor device

Номер патента: US7790609B2. Автор: Ji-Ho Hong. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-09-07.

Method of forming wiring layer of semiconductor device

Номер патента: US20090227101A1. Автор: Sun-jung Lee,Mu-Kyeng Jung,Ki-Chul Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-10.

Methods of forming silicide layer of semiconductor device

Номер патента: US20050142727A1. Автор: Jin Jung. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-06-30.

Methods of forming metal wiring of semiconductor devices

Номер патента: US20040132283A1. Автор: Dong-Ki Jeon,Jae-Won Han. Владелец: Anam Semiconductor Inc. Дата публикации: 2004-07-08.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09685566B2. Автор: Naoki Yutani,Daisuke CHIKAMORI,Yasuhiko NISHIO. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-06-20.

Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

Номер патента: TW200607077A. Автор: Minoru Moriwaki. Владелец: Seiko Epson Corp. Дата публикации: 2006-02-16.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20190237547A1. Автор: Koichi Murata,Takeshi Tawara,Hidekazu Tsuchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-08-01.

Substrate for semiconductor device, method of manufacturing substrate for semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

Номер патента: KR100698000B1. Автор: 미노루 모리와키. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2007-03-23.

Detection of seed layers on a semiconductor device

Номер патента: US20070087530A1. Автор: Jae Kim,Ji Young Yim. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-04-19.

Substrate processing apparatus, non-transitory computer-readable recording medium and method of manufacturing semiconductor device

Номер патента: US09502236B2. Автор: Tetsuo Yamamoto,Kazuyuki Toyoda,Taketoshi Sato,Kazuhiro Morimitsu,Yukitomo Hirochi. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-11-22.

Dry etching method of manufacturing semiconductor light emitting device substrate

Номер патента: US09748441B2. Автор: Kei Shinotsuka,Kotaro Dai,Yoshihisa Hatta,Yasuhito KAJITA. Владелец: Oji Holdings Corp. Дата публикации: 2017-08-29.

Method of manufacturing a semiconductor device, pattern correction apparatus, and computer-readable recording medium

Номер патента: US20080241972A1. Автор: Tomohiko Yamamoto. Владелец: Fujitsu Ltd. Дата публикации: 2008-10-02.

Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US20040080991A1. Автор: Tatsuo Sawasaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-04-29.

Method of forming openings in a semiconductor device and a semiconductor device fabricated by the method

Номер патента: US20100291770A1. Автор: Massud Abubaker Aminpur,Scott Warrick,Lionel Riviere-Cazeaux,Will Conley. Владелец: Individual. Дата публикации: 2010-11-18.

Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure

Номер патента: US09564442B2. Автор: Wolfgang Mueller,Sanh D. Tang,Sourabh Dhir,Dylan R. MACMASTER. Владелец: Micron Technology Inc. Дата публикации: 2017-02-07.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210028010A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-28.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Номер патента: US20210343524A1. Автор: Seungmin Ryu,Younjoung CHO,Younsoo Kim,Sunmin Moon,Haeryong Kim,Kyooho JUNG,Jeonggyu SONG,Changsu WOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-11-04.

Method of forming insulating film in semiconductor device

Номер патента: US20050014389A1. Автор: Sung Hwang. Владелец: Individual. Дата публикации: 2005-01-20.

Method of forming isolation film of semiconductor device

Номер патента: US20040127035A1. Автор: Sung Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2004-07-01.

Method of patterning features of a semiconductor device

Номер патента: US09627262B2. Автор: Ming-Feng Shieh,Ru-Gun Liu,Chih-Ming Lai,Wen-Chun Huang,Wei-Chao Chiu,Chen-Yu Chen,Nian-Fuh Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-18.

Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

Номер патента: US09608119B2. Автор: Ming Zhang,John K. Zahurak,Andrew M. Bayless,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-03-28.

Method of selectively depositing glass on semiconductor devices

Номер патента: CA1038329A. Автор: Robert B. Comizzoli. Владелец: RCA Corp. Дата публикации: 1978-09-12.

Methods of forming patterns of a semiconductor device

Номер патента: US20150076617A1. Автор: Jong-wook Lee,Myeong-Cheol Kim,Cheol Kim,Si-Young Choi,Choong-ho Lee,Jong-Chan Shin,Jong-Seo Hong,Il-Sup Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-03-19.

Method of multiple patterning to form semiconductor devices

Номер патента: US20140024191A1. Автор: Kangguo Cheng,Bruce B. Doris,Kuang-Jung Chen,Sen Liu,Steven J. Holmes. Владелец: International Business Machines Corp. Дата публикации: 2014-01-23.

Method of selectively depositing glass on semiconductor devices

Номер патента: US3895127A. Автор: Robert Benedict Comizzoli. Владелец: RCA Corp. Дата публикации: 1975-07-15.

Method of forming a pattern of semiconductor device of a semiconductor device on a semiconductor substrate by using an extreme ultraviolet mask

Номер патента: US20230106148A1. Автор: Kisung Kim,Sangoh PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

Method of forming isolation film of semiconductor device

Номер патента: US7060630B2. Автор: Sung Hoon Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-06-13.

Method of forming a pattern in semiconductor device manufacturing process

Номер патента: US5236547A. Автор: Shigeki Takahashi,Yasuhiro Shiraki. Владелец: Toshiba Corp. Дата публикации: 1993-08-17.

Method of forming isolation layer for semiconductor device

Номер патента: US5913133A. Автор: Byung Seok Lee. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1999-06-15.

Semiconductor device and method of forming patterns for a semiconductor device

Номер патента: US20200144391A1. Автор: Dae Sung EOM. Владелец: SK hynix Inc. Дата публикации: 2020-05-07.

Methods of fabricating a capacitor and semiconductor device

Номер патента: US20230107346A1. Автор: Hyunjun Kim,Yukyung Shin,Cheoljin Cho,Changhwa JUNG,Jongbeom SEO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-06.

Semiconductor device and formation thereof

Номер патента: US09666438B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium

Номер патента: US09831082B2. Автор: HIROSHI Ashihara,Yoshiro Hirose,Takaaki Noda,Satoshi Shimamoto,Tsukasa Kamakura,Takeo Hanashima,Shingo Nohara. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-11-28.

Method of manufacturing semiconductor device, substrate processing system, and non-transitory computer-readable recording medium

Номер патента: US20230099451A1. Автор: Osamu Ueda,Kazuhide Asai,Norihito SHINOZAWA,Takanori KYOGOKU. Владелец: Kokusai Electric Corp. Дата публикации: 2023-03-30.

Method of cleaning semiconductor substrate, and method of manufacturing semiconductor device and semiconductor substrate processing apparatus for use in the same

Номер патента: US20060046500A1. Автор: MAKOTO Miyamoto. Владелец: Renesas Technology Corp. Дата публикации: 2006-03-02.

Semiconductor device and method of fabricating the same

Номер патента: US20200105765A1. Автор: Yoosang Hwang,Keunnam Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-04-02.

Method of fabricating semiconductor device

Номер патента: US09972539B2. Автор: Chih-Chung Wang,Wen-Fang Lee,Shin-Hung Li,Nien-Chung Li,Kuan-Chuan Chen. Владелец: United Microelectronics Corp. Дата публикации: 2018-05-15.

Semiconductor device and method of fabricating the same

Номер патента: US09653460B1. Автор: Chih-Chung Wang,Wen-Fang Lee,Shin-Hung Li,Nien-Chung Li,Kuan-Chuan Chen. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-16.

Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device

Номер патента: US20030213426A1. Автор: Eiji Natori,Koichi Furuyama,Yuzo Tasaki. Владелец: Seiko Epson Corp. Дата публикации: 2003-11-20.

Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device

Номер патента: US09691616B2. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-06-27.

Exposure methods using e-beams and methods of manufacturing masks and semiconductor devices therefrom

Номер патента: US09671686B2. Автор: Sang-Hee Lee,Jin Choi,In-kyun Shin,Byoung-Sup Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US7989231B2. Автор: Yuuichi Takeuchi,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-08-02.

Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US6787371B2. Автор: Tatsuo Sawasaki. Владелец: Seiko Epson Corp. Дата публикации: 2004-09-07.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09613809B2. Автор: Taku Horii,Masaki Kijima. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-04-04.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device

Номер патента: US09640618B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-05-02.

Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium

Номер патента: US11869764B2. Автор: Akinori Tanaka,Sadayoshi Horii,Hideto TATENO. Владелец: Kokusai Electric Corp. Дата публикации: 2024-01-09.

Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium

Номер патента: US20230077197A1. Автор: Akinori Tanaka,Sadayoshi Horii,Hideto TATENO. Владелец: Kokusai Electric Corp. Дата публикации: 2023-03-09.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09887270B2. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-06.

Methods of fabricating isolation regions of semiconductor devices and structures thereof

Номер патента: US09653543B2. Автор: Roland Hampp,Armin Tilke,Marcus Culmsee,Chris Stapelmann,Bee Kim Hong. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-05-16.

Method of separating a wafer of semiconductor devices

Номер патента: US09608016B2. Автор: Stefano Schiaffino,Grigoriy Basin,Jipu Lei,Alexander H. Nickel. Владелец: Koninklijke Philips NV. Дата публикации: 2017-03-28.

Group-iii nitride semiconductor device, epitaxial substrate, and method of fabricating group-iii nitride semiconductor device

Номер патента: US20120299010A1. Автор: Masaki Ueno,Takao Nakamura,Takashi Kyono,Katsushi Akita,Yusuke Yoshizumi,Takamichi Sumitomo,Yohei Enya. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2012-11-29.

Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium therefor

Номер патента: US11926893B2. Автор: Naofumi Ohashi,Tetsuaki Inada. Владелец: Kokusai Electric Corp. Дата публикации: 2024-03-12.

Substrate processing method, substrate processing apparatus, and computer-readable recording medium

Номер патента: US20240001410A1. Автор: Tsunemoto OGATA. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-01-04.

Substrate processing method, substrate processing apparatus, and computer readable recording medium

Номер патента: US20210208504A1. Автор: Takashi Yamauchi,Shinichiro KAWAKAMI,Masashi Enomoto. Владелец: Tokyo Electron Ltd. Дата публикации: 2021-07-08.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160240380A1. Автор: Taku Horii. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-08-18.

Method of Manufacturing a Power Semiconductor Device

Номер патента: US20190157401A1. Автор: Hans-Joachim Schulze,Christoph Weiss,Daniel Schloegl,Matthias Kuenle. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-05-23.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200279947A1. Автор: Fumitoshi Yamamoto. Владелец: Mitsubishi Electric Corp. Дата публикации: 2020-09-03.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20190157398A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-05-23.

Substrate processing apparatus, article manufacturing method, substrate processing method, substrate processing system, management apparatus, and storage medium

Номер патента: US20200333718A1. Автор: Shinichiro Koga,Takahiro Takiguchi. Владелец: Canon Inc. Дата публикации: 2020-10-22.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device.

Номер патента: US20160254356A1. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2016-09-01.

Method of manufacturing a power semiconductor device having source region and body contact region formed between trench-type gate electrodes

Номер патента: US11855184B2. Автор: Soo Chang Kang,Seong Jo HONG. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2023-12-26.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US10236372B2. Автор: Keiji Okumura,Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2019-03-19.

Method of operating vertical heat treatment apparatus, vertical heat treatment apparatus and non-transitory recording medium

Номер патента: US20140295676A1. Автор: Keisuke Suzuki,Yutaka Motoyama. Владелец: Tokyo Electron Ltd. Дата публикации: 2014-10-02.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180301536A1. Автор: Makoto Utsumi,Fumikazu Imai,Yasuhiko OONISHI. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-10-18.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210167173A1. Автор: Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-03.

Method of manufacturing silicon carbide semiconductor device

Номер патента: CA2669949A1. Автор: Kazuhiro Fujikawa. Владелец: Kazuhiro Fujikawa. Дата публикации: 2008-06-05.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20170271468A1. Автор: Fumikazu Imai,Takuya Komatsu,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-09-21.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11942517B2. Автор: Takeyoshi Masuda. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-03-26.

Method of fabrication of adjacent coplanar semiconductor devices

Номер патента: US5376229A. Автор: Steven D. Lester,Jeffrey N. Miller,Danny E. Mars. Владелец: Hewlett Packard Co. Дата публикации: 1994-12-27.

Method of forming thin film of semiconductor device

Номер патента: US9564286B2. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2017-02-07.

Method of forming thin film of semiconductor device

Номер патента: US20160049291A1. Автор: Peter Schindler,Friedrich B. Prinz,Ki-Hyun Kim,Sam Hyung Sam KIM,Andrei Teodor IANCU,Michael C. Langston,Stephen P. WALCH,Takane Usui. Владелец: Leland Stanford Junior University. Дата публикации: 2016-02-18.

Method of forming contacts for a semiconductor device

Номер патента: US20120094485A1. Автор: Shih-Chang Chen,Huan-Just Lin,Tsai-Chun Li,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2012-04-19.

Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures

Номер патента: WO2015017117A1. Автор: Roy E. Meade,Sumeet C. Pandey. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2015-02-05.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: EP4375400A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-29.

Fabrication method of layer structure for mounting semiconductor device

Номер патента: US20180233442A1. Автор: Hung-Chi Chen,Fang-Lin Tsai,Yi-Feng Chang,Yi-Min Fu,Cheng-Jen Liu. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2018-08-16.

Crystalline inzno oxide semiconductor, method of forming the same, and semiconductor device including the crystalline inzno oxide semiconductor

Номер патента: US20240178324A1. Автор: Seonghwan Ryu,Kwanghee Lee,Sangwook Kim,Jinseong PARK,Hyemi KIM. Владелец: Industry University Cooperation Foundation IUCF HYU. Дата публикации: 2024-05-30.

Method of producing a complementary-type semiconductor device

Номер патента: US5036019A. Автор: Yasushi Higuchi,Hiroyuki Yamane. Владелец: NipponDenso Co Ltd. Дата публикации: 1991-07-30.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20150200102A1. Автор: TAKEDA Tsuyoshi,Ogawa Arito. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2015-07-16.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20150200103A1. Автор: TAKEDA Tsuyoshi,Ogawa Arito. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2015-07-16.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20150200104A1. Автор: TAKEDA Tsuyoshi,Ogawa Arito. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2015-07-16.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20160305017A1. Автор: TAKEDA Tsuyoshi,Ogawa Arito. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2016-10-20.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer-readable recording medium

Номер патента: KR101434116B1. Автор: 아리토 오가와,츠요시 타케다. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2014-08-26.

Semiconductor devices and methods of manufacturing the same

Номер патента: US09466697B2. Автор: Bo-Un Yoon,Jeong-Nam Han,Sang-Jine Park,Myung-Geun Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-11.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20030062575A1. Автор: Masakatsu Tsuchiaki. Владелец: Toshiba Corp. Дата публикации: 2003-04-03.

Manufacturing method of semiconductor device

Номер патента: US20080142901A1. Автор: Yutaka Takeshima,Yasuko Yoshida,Shuji Matsuo,Kota Funayama,Katsuhiro Uchimura. Владелец: Individual. Дата публикации: 2008-06-19.

Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: EP4357481A1. Автор: Yukinao Kaga,Koei KURIBAYASHI,Kento NOMURA. Владелец: Kokusai Electric Corp. Дата публикации: 2024-04-24.

Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium

Номер патента: JP5793241B1. Автор: 直史 大橋,大橋　直史. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2015-10-14.

Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium

Номер патента: JPWO2015097871A1. Автор: 直史 大橋,大橋　直史. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-03-23.

Semiconductor device and formation thereof

Номер патента: US09530736B2. Автор: Yu-Hung Lin,Sheng-Hsuan Lin,Chih-Wei Chang,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-27.

Semiconductor device manufacturing method, substrate processing device and recording medium

Номер патента: JPWO2020054299A1. Автор: 小川　有人,有人 小川. Владелец: Kokusai Electric Corp. Дата публикации: 2021-08-30.

Semiconductor device manufacturing method, substrate processing device, and recording medium

Номер патента: WO2020054299A1. Автор: 小川　有人. Владелец: 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ. Дата публикации: 2020-03-19.

Method of forming contact included in semiconductor device

Номер патента: US20240098986A1. Автор: Donghyun Lee,Uihyoung LEE,Suncheul KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-21.

Method of forming contact included in semiconductor device

Номер патента: US20220415902A1. Автор: Donghyun Lee,Uihyoung LEE,Suncheul KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-29.

Method of forming contact included in semiconductor device

Номер патента: US11871563B2. Автор: Donghyun Lee,Uihyoung LEE,Suncheul KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-09.

Method of manufacturing semiconductor device

Номер патента: US09425288B2. Автор: Chao Zhao,Huicai Zhong,Qingqing Liang. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2016-08-23.

Method of rinsing and drying semiconductor device and method of manufacturing semiconductor device using the same

Номер патента: US20150287590A1. Автор: Hyosan Lee,Yongsun Ko,Kwangsu Kim,Seokhoon Kim,Kuntack Lee,Yong-jhin Cho,Jihoon Jeong,Jung-min Oh,ChangSup Mun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-10-08.

Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium

Номер патента: KR101555604B1. Автор: 사토시 시마모토,요시로 히로세,히로시 아시하라,타케오 하나시마,타카아키 노다,츠카사 카마쿠라,싱고 노하라. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2015-09-24.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09893162B2. Автор: Takumi Fujimoto,Yoshiyuki Sakai,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-02-13.

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240274434A1. Автор: Tsubasa HONKE,Takaya MIYASE,Taro Enokizono,Hiroki Nishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-08-15.

Semiconductor device structures with doped elements and methods of formation

Номер патента: US09773677B2. Автор: Shyam Surthi. Владелец: Micron Technology Inc. Дата публикации: 2017-09-26.

Semiconductor device manufacturing method, substrate processing apparatus and recording medium

Номер патента: KR102452913B1. Автор: 마사노리 나카야마,가츠노리 후나키,다츠요시 우에다,야스토시 츠보타,유이치로 다케시마,히로토 이가와,유키 야마카도. Владелец: 가부시키가이샤 코쿠사이 엘렉트릭. Дата публикации: 2022-10-11.

Semiconductor device manufacturing method, substrate processing apparatus, and recording medium

Номер патента: JPWO2019065544A1. Автор: 立志 上田,雅則 中山,雄一郎 竹島,克典 舟木,康寿 坪田,博登 井川,上田　立志,宥貴 山角. Владелец: Kokusai Electric Corp. Дата публикации: 2020-04-30.

Method of forming junction of semiconductor device

Номер патента: US20090111233A1. Автор: Dong Ho Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2009-04-30.

Flash memory semiconductor device and method thereof

Номер патента: US09412597B2. Автор: Jen-Yuan Chang,Chia-Ping Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-09.

Fabrication method of trenched metal-oxide-semiconductor device

Номер патента: US20110230025A1. Автор: Chun Ying Yeh. Владелец: Niko Semiconductor Co Ltd. Дата публикации: 2011-09-22.

Fabrication method of trenched metal-oxide-semiconductor device

Номер патента: US20100151642A1. Автор: Chun Ying Yeh. Владелец: Niko Semiconductor Co Ltd. Дата публикации: 2010-06-17.

Substrate liquid processing method, substrate liquid processing apparatus, and computer-readable recording medium

Номер патента: US20220290302A1. Автор: Yuichiro Inatomi,Takafumi Niwa,Kazutoshi Iwai. Владелец: Tokyo Electron Ltd. Дата публикации: 2022-09-15.

Semiconductor device and method

Номер патента: US20230299136A1. Автор: Tze-Liang Lee,Pei-Yu Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Semiconductor device having aluminum contacts or vias and method of manufacture therefor

Номер патента: US5913146A. Автор: Sailesh M. Merchant,Binh Nguyenphu. Владелец: Lucent Technologies Inc. Дата публикации: 1999-06-15.

Trench MOSFET with depleted gate shield and method of manufacture

Номер патента: US10832915B2. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2020-11-10.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20170012111A1. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2017-01-12.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20190115218A1. Автор: Patrick M. Shea. Владелец: Renesas Electronics America Inc. Дата публикации: 2019-04-18.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US12094942B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20240234496A1. Автор: Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-11.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20240339323A1. Автор: Hidenori Satou,Atsushi Yoshimoto,Takahito Kojima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-10.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09793121B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-17.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240154031A1. Автор: Masaki Miyazato,Yohei Kagoyama,Mina OHSE. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-05-09.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11114560B2. Автор: Keiji Okumura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-09-07.

Silicon carbide semiconductor device, silicon carbide semiconductor assembly, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200152594A1. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-05-14.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US09978598B2. Автор: Makoto Utsumi,Yoshiyuki Sakai. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-22.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20220336219A1. Автор: Daisuke Taniguchi,Toshikazu Tanioka,Junya MIWA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-10-20.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20160314973A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-10-27.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210074863A1. Автор: Takahito Kojima,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-03-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230253491A1. Автор: Manabu Takei,Shinsuke Harada,Masakazu Baba. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200303541A1. Автор: Keiji Okumura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-09-24.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220302251A1. Автор: Masanobu IWAYA,Kensuke HATA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-09-22.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200343345A1. Автор: Makoto Utsumi,Tsuyoshi ARAOKA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2020-10-29.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230326960A1. Автор: Keishirou KUMADA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-10-12.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11600702B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-03-07.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180138273A1. Автор: Takashi Tsuji. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-05-17.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210175369A1. Автор: Takafumi Uchida,Takahito Kojima,Yuichi HASHIZUME,Naoyuki Ohse. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-06-10.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210111250A1. Автор: Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-04-15.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220013641A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-01-13.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240021737A1. Автор: Yuichi HASHIZUME. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-01-18.

Methods of making passivating layers for semiconductor devices

Номер патента: GB1532456A. Автор: . Владелец: Sony Corp. Дата публикации: 1978-11-15.

Method of forming beam leads on semiconductor devices and integrated circuits

Номер патента: US3653999A. Автор: Clyde Rhea Fuller. Владелец: Texas Instruments Inc. Дата публикации: 1972-04-04.

Method of forming conductive layer of semiconductor device

Номер патента: US20240038545A1. Автор: Yu Shu Lin. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-01.

Method of making silicon-on-sapphire semiconductor devices

Номер патента: US4775641A. Автор: Glenn W. Cullen,Michael T. Duffy. Владелец: General Electric Co. Дата публикации: 1988-10-04.

Substrate processing apparatus, method of manufacturing semiconductor device, substrate processing method and non-transitory computer-readable recording medium

Номер патента: US20240234178A1. Автор: Daiki Kimoto. Владелец: Kokusai Electric Corp. Дата публикации: 2024-07-11.

Coating method, processing apparatus, non-transitory computer-readable recording medium, substrate processing method and method of manufacturing semiconductor device

Номер патента: US20240178008A1. Автор: Arito Ogawa. Владелец: Kokusai Electric Corp. Дата публикации: 2024-05-30.

Method of manufacturing semiconductor device and substrate processing apparatus

Номер патента: US9330904B2. Автор: Yoshiro Hirose,Yushin Takasawa,Hajime Karasawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-05-03.

Substrate Processing Apparatus, Non-transitory Computer-readable Recording Medium, Substrate Processing Method and Method of Manufacturing Semiconductor Device

Номер патента: US20220301850A1. Автор: Kuribayashi Koei,YAMAMOTO Katsuhiko,UEDA Tatsushi. Владелец: . Дата публикации: 2022-09-22.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20190259603A1. Автор: HASHIMOTO Yoshitomo,MATSUOKA Tatsuru. Владелец: KOKUSAI ELECTRIC CORPORATION. Дата публикации: 2019-08-22.

Substrate processing apparatus, non-transitory computer-readable recording medium and method of manufacturing semiconductor device

Номер патента: US9064695B1. Автор: Tetsuo Yamamoto,Kazuyuki Toyoda,Taketoshi Sato,Kazuhiro Morimitsu,Yukitomo Hirochi. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2015-06-23.

Processing apparatus and processing method

Номер патента: US12062569B2. Автор: Kazuya IKEUE. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-08-13.

Processing apparatus and processing method

Номер патента: US20240363391A1. Автор: Kazuya IKEUE. Владелец: Tokyo Electron Ltd. Дата публикации: 2024-10-31.

Semiconductor device manufacturing method, substrate processing apparatus, and recording medium

Номер патента: JPWO2018163250A1. Автор: 隆史 佐々木,公彦 中谷,建夫 花島,司 鎌倉. Владелец: Kokusai Electric Corp. Дата публикации: 2019-11-07.

Semiconductor device manufacturing method, substrate processing apparatus, and recording medium

Номер патента: JPWO2017056155A1. Автор: 亮太 笹島,慎太郎 小倉,笹島　亮太,康祐 ▲たか▼木. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2018-06-28.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US09466675B2. Автор: Chikayuki Okamoto,Tomihito Miyazaki. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-10-11.

Substrate processing apparatus, manufacturing method and recording medium of semiconductor device

Номер патента: KR102073533B1. Автор: 고이찌로 하라다,다께시 야스이,가쯔노리 후나끼,마사끼 무로바야시. Владелец: 가부시키가이샤 코쿠사이 엘렉트릭. Дата публикации: 2020-02-04.

Semiconductor device and method of fabricating the same

Номер патента: US09607985B1. Автор: Chen-Ming Huang,I-Ming Tseng,Wen-An Liang. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

Номер патента: US20130295750A1. Автор: Ning Li,Cheng-Wei Cheng,Kuen-Ting Shiu. Владелец: International Business Machines Corp. Дата публикации: 2013-11-07.

Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure

Номер патента: US09728397B1. Автор: Hsu Ting,Chun-Wei Yu,Chueh-Yang Liu,Yu-Ren Wang. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-08.

Substrate processing device, the manufacturing method and recording medium of semiconductor devices

Номер патента: CN108630574A. Автор: 高木康祐,山腰莉早,上野崇纪. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2018-10-09.

Method for via formation in a semiconductor device

Номер патента: US20120302062A1. Автор: Yi Nan Chen,Hsien Wen Liu,Chih Ching Lin. Владелец: Nanya Technology Corp. Дата публикации: 2012-11-29.

Semiconductor devices and methods of fabricating the same

Номер патента: US09640658B2. Автор: Dong Hyuk Kim,DongSuk Shin,Myungsun Kim,Hoi Sung Chung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-02.

Semiconductor device having capped air caps between buried bit lines and buried gate

Номер патента: US10854676B2. Автор: Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2020-12-01.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY RECORDING MEDIUM

Номер патента: US20130252433A1. Автор: UEDA Tatsushi. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2013-09-26.

MICRO-PATTERN FORMING METHOD, CAPACITOR AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Номер патента: US20200152638A1. Автор: KIM Jong-hyuk,Kim Jae-hee,HA Soon-mok,HWANG Chan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-05-14.

MICRO-PATTERN FORMING METHOD, CAPACITOR AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

Номер патента: US20180175043A1. Автор: KIM Jong-hyuk,Kim Jae-hee,HA Soon-mok,HWANG Chan. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2018-06-21.

Method of forming fine pattern of semiconductor device

Номер патента: US09812335B2. Автор: Jaehong Park,Dongchan Kim,Jinyoung Park,Je-woo Han,Sungyeon KIM,Junho Yoon,KyungYub JEON,Kyohyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-07.

Method of forming strained structures of semiconductor devices

Номер патента: US09748388B2. Автор: Clement Hsingjen Wann,Chih-Hsin Ko,Cheng-Hsien Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices

Номер патента: US09558993B2. Автор: Jaehan Lee,Jaehwang SIM,Keonsoo Kim,Jaeho Min. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-31.

Method of forming fine pattern of semiconductor device using SiGe layer as sacrificial layer, and method of forming self-aligned contacts using the same

Номер патента: US20050282363A1. Автор: Chang-jin Kang,Kyeong-koo Chi,Cheol-kyu Lee,Keun-Hee Bai. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-12-22.

Method of forming bit line in semiconductor device

Номер патента: US20060240673A1. Автор: Sung Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-10-26.

Method of bevel trimming three dimensional semiconductor device

Номер патента: US20120270394A1. Автор: Yi-Nan Chen,Hsien-Wen Liu,Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2012-10-25.

Method of manufacturing semiconductor device and substrate processing apparatus

Номер патента: US20110294280A1. Автор: Yoshiro Hirose,Yushin Takasawa,Hajime Karasawa. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2011-12-01.

Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: EP4411020A1. Автор: Hiroyuki Koide,Nagisa SUYAMA,Tomoya NAGAHASHI. Владелец: Kokusai Electric Corp. Дата публикации: 2024-08-07.

Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: EP4243053A1. Автор: KIMIHIKO Nakatani,Kiyohisa Ishibashi,Takafumi Nitta,Shingo Nohara. Владелец: Kokusai Electric Corp. Дата публикации: 2023-09-13.

Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: EP4435143A2. Автор: Keigo Nishida,Masanao Osanai. Владелец: Kokusai Electric Corp. Дата публикации: 2024-09-25.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

Номер патента: US10886248B2. Автор: Satoshi Inada,Jun-Su Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-01-05.

Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium

Номер патента: US20160155634A1. Автор: HIROSHI Ashihara,Yoshiro Hirose,Takaaki Noda,Satoshi Shimamoto,Tsukasa Kamakura,Takeo Hanashima,Shingo Nohara. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-06-02.

Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium

Номер патента: US20140287595A1. Автор: Hirose Yoshiro,NODA Takaaki,NOHARA Shingo,KAMAKURA Tsukasa,HANASHIMA Takeo,SHIMAMOTO Satoshi,ASHIHARA Hiroshi. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2014-09-25.

Method of manufacturing semiconductor device and substrate processing apparatus

Номер патента: US20110104879A1. Автор: Takeo Hanashima. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2011-05-05.

GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture

Номер патента: US20100314625A1. Автор: Takashi Sakurada,Hideaki Nakahata,Yoshiyuki Yamamoto,Shinsuke Fujiwara,Seiji Nakahata,Tomoki Uemura. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2010-12-16.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20140179086A1. Автор: TAKEDA Tsuyoshi,Ogawa Arito. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2014-06-26.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer readable recording medium

Номер патента: KR101461310B1. Автор: 사토시 시마모토,유고 오리하시,가오리 기리키히라. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2014-11-13.

Semiconductor device and method of manufacture

Номер патента: US20210091231A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2021-03-25.

Compound semiconductor device and method of manufacturing the same

Номер патента: US09502525B2. Автор: Atsushi Yamada,Norikazu Nakamura,Kenji Imanishi,Tetsuro ISHIGURO. Владелец: Fujitsu Ltd. Дата публикации: 2016-11-22.

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

Номер патента: US20170047243A1. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunjun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-02-16.

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

Номер патента: US09515172B2. Автор: Sungmin Kim,Heonjong Shin,Byungseo Kim,Sunhom Steve Paak,Hyunjun Bae. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-06.

SUBSTRATE PROCESSING APPARATUS, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер патента: US20150194304A1. Автор: SATO Taketoshi,Toyoda Kazuyuki,YAMAMOTO Tetsuo,HIROCHI Yukitomo,Morimitsu Kazuhiro. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2015-07-09.

Substrate Processing Apparatus, Non-Transitory Computer-Readable Recording Medium and Method of Manufacturing Semiconductor Device

Номер патента: US20150194306A1. Автор: SATO Taketoshi,Toyoda Kazuyuki,YAMAMOTO Tetsuo,HIROCHI Yukitomo,Morimitsu Kazuhiro. Владелец: . Дата публикации: 2015-07-09.

Substrate processing apparatus, method of manufacturing semiconductor device, cartridge head, gas distribution assembly and non-transitory computer-readable recording medium thereof

Номер патента: KR101668236B1. Автор: 타카후미 사사키. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2016-10-21.

Silicon carbide epitaxial substrate, method of manufacturing silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240332364A1. Автор: Taro Nishiguchi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-10-03.

Method of manufacturing nitride semiconductor device using laminated cap layers

Номер патента: US09805930B2. Автор: Katsunori Ueno,Ryo Tanaka,Masaharu Edo,Shinya Takashima. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-10-31.

III-nitride semiconductor device with doped epi structures

Номер патента: US09608075B1. Автор: Srinivasan Kannan,Peter Kim,Scott Nelson,Mihir Tungare,Jianwei Wan,Seong-Eun Park. Владелец: Infineon Technologies North America Corp. Дата публикации: 2017-03-28.

Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device

Номер патента: US09368345B2. Автор: Jun Genba. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2016-06-14.

Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: EP4261324A1. Автор: Arito Ogawa,Atsuro Seino. Владелец: Kokusai Electric Corp. Дата публикации: 2023-10-18.

Method of processing substrate, method of manufacturing semiconductor device, program, and substrate processing apparatus

Номер патента: EP4343814A1. Автор: KIMIHIKO Nakatani,Yoshiro Hirose,Takayuki Waseda,Yoshitomo Hashimoto,Shoma MIYATA. Владелец: Kokusai Electric Corp. Дата публикации: 2024-03-27.

Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium for forming containing silicon

Номер патента: US20230357926A1. Автор: KIMIHIKO Nakatani. Владелец: Kokusai Electric Corp. Дата публикации: 2023-11-09.

Method of Manufacturing Semiconductor Device

Номер патента: US20170372894A1. Автор: Naofumi Ohashi,Tsuyoshi Takeda,Yukinori Aburatani,Shin Hiyama. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-12-28.

Laser bonding apparatus, method of bonding semiconductor devices, and method of manufacturing semiconductor package

Номер патента: US20190214362A1. Автор: Satoshi Inada,Jun-Su Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-07-11.

Method of manufacturing silicon carbide substrate and method of manufacturing silicon carbide semiconductor device

Номер патента: US20130017683A1. Автор: Shin Harada,Kyoko Okita,Tsubasa HONKE. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2013-01-17.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11424325B2. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-23.

Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US20220393002A1. Автор: Takafumi Uchida. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-12-08.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12132084B2. Автор: Yohei Kagoyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-10-29.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM

Номер патента: US20140349492A1. Автор: Hirose Yoshiro,Sano Atsushi,NODA Takaaki,KAMAKURA Tsukasa,SHIMAMOTO Satoshi. Владелец: C/O HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2014-11-27.

SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM

Номер патента: US20140370628A1. Автор: SATO Takeo. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2014-12-18.

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180323262A1. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2018-11-08.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM

Номер патента: US20170268105A1. Автор: TAKEDA Tsuyoshi. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2017-09-21.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

Номер патента: US20170294302A1. Автор: Hirose Yoshiro,Sano Atsushi,HARADA Katsuyoshi. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2017-10-12.

Semiconductor device manufacturing method, substrate processing apparatus and recording medium

Номер патента: KR101624395B1. Автор: 사토시 시마모토,요시로 히로세,기요히코 마에다,다카아키 노다,신고 노하라. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2016-05-25.

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20190221647A1. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2019-07-18.

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20200287000A1. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-09-10.

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US10998406B2. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2021-05-04.

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Номер патента: US10700169B2. Автор: Tsutomu Hori. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2020-06-30.

Method of manufacturing multilayer structured semiconductor device

Номер патента: US20040067636A1. Автор: Motoki Kobayashi. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2004-04-08.

Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium

Номер патента: JP6594768B2. Автор: 由悟 渡橋,敦 森谷. Владелец: Kokusai Electric Corp. Дата публикации: 2019-10-23.

Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium

Номер патента: JP5864637B2. Автор: 聡 島本,島本　聡,義朗 ▲ひろせ▼,芦原　洋司,洋司 芦原,花島　建夫,建夫 花島,司 鎌倉,孝暁 野田,野田　孝暁,慎吾 野原. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-02-17.

Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium

Номер патента: JP6616365B2. Автор: 匡史 北村. Владелец: Kokusai Electric Corp. Дата публикации: 2019-12-04.

METHOD OF FORMING OXIDE FILM INCLUDING TWO NON-OXYGEN ELEMENTS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE

Номер патента: US20210028010A1. Автор: KIM Younsoo,KIM Haeryong,RYU Seungmin,MOON Sunmin,SONG Jeonggyu,WOO Changsu,JUNG Kyooho,CHO Younjoung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-01-28.

METHOD OF FORMING OXIDE FILM INCLUDING TWO NON-OXYGEN ELEMENTS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE

Номер патента: US20210343524A1. Автор: KIM Younsoo,KIM Haeryong,RYU Seungmin,MOON Sunmin,SONG Jeonggyu,WOO Changsu,JUNG Kyooho,CHO Younjoung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-11-04.

Semiconductor device and method for fabricating the same

Номер патента: US20010000914A1. Автор: Young Park,Jong Lee,Hyeok Lee. Владелец: LG Semicon Co Ltd. Дата публикации: 2001-05-10.

Semiconductor device and method of fabricating the same

Номер патента: US09627509B2. Автор: Sangjin Hyun,Wandon Kim,Shinhye Kim,Byung-Suk Jung,TaekSoo JEON,Kyungbum KOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-18.

Semiconductor device including fin shaped structure and method for fabricating the same

Номер патента: US09722078B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-08-01.

Semiconductor device manufacturing method, substrate processing device, and recording medium

Номер патента: TW201511136A. Автор: HIROSHI Ashihara,Yuichi Wada,Shin Hiyama,Masahisa OKUNO,Harunobu Sakuma. Владелец: Hitachi Int Electric Inc. Дата публикации: 2015-03-16.

Semiconductor device manufacturing method, substrate processing device, and recording medium

Номер патента: TWI606515B. Автор: Masayoshi Minami,Ryota Sasajima,Shintaro Kogura. Владелец: Hitachi Int Electric Inc. Дата публикации: 2017-11-21.

Method of fabricating high voltage semiconductor device

Номер патента: US6180471B1. Автор: Gary Hong,Peter Chang,Joe Ko. Владелец: United Semiconductor Corp. Дата публикации: 2001-01-30.

Method for fabricating semiconductor device including fin shaped structure

Номер патента: US20170194193A1. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2017-07-06.

Method for fabricating semiconductor device including fin shaped structure

Номер патента: US9881831B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-30.

Method for fabricating semiconductor device including fin shaped structure

Номер патента: US09881831B2. Автор: Chao-Hung Lin,Chung-Yi Chiu,Shih-Fang Hong. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-30.

Semiconductor device and method of fabricating the same

Номер патента: US09773890B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Lung Chen,Chia-Lin Lu,Wei-Hao Huang. Владелец: United Microelectronics Corp. Дата публикации: 2017-09-26.

Semiconductor device and method of forming the same

Номер патента: US09698059B2. Автор: Chia-Fu Hsu,Tian Choy Gan,Chu-Yun Hsiao. Владелец: United Microelectronics Corp. Дата публикации: 2017-07-04.

Semiconductor device manufacturing method, substrate processing method, recording medium, and substrate processing apparatus

Номер патента: KR20220018051A. Автор: 마사노리 나카야마,야스토시 츠보타,히로토 이가와,유키 야마카도,카츠노리 후나키,타츠시 우에다,유이치로 타케시마,에이코 타카미,케이타 이치무라. Владелец: 가부시키가이샤 코쿠사이 엘렉트릭. Дата публикации: 2022-02-14.

Method of cleaning thin film forming apparatus, thin film forming method, thin film forming apparatus and recording medium

Номер патента: KR101697394B1. Автор: 료타 고토,린타로 다카오. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2017-01-17.

Semiconductor device and manufacturing method

Номер патента: US20200274332A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2020-08-27.

Semiconductor device and manufacturing method

Номер патента: WO2019020871A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2019-01-31.

Method for fabricating a semiconductor device and a substrate processing apparatus

Номер патента: TW200300581A. Автор: Takashi Ozaki,Kenichi Suzaki,Norikazu Mizuno. Владелец: Hitachi Int Electric Inc. Дата публикации: 2003-06-01.

SUBSTRATE PROCESSING SYSTEM, SUBSTRATE CLEANING METHOD, AND RECORDING MEDIUM

Номер патента: US20160035561A1. Автор: KANNO Itaru,Yoshida Yuki,MOCHIDA Kenji,Yamashita Masami,Kawano Hisashi,AIBARA Meitoku,SHIMA Motoyuki. Владелец: . Дата публикации: 2016-02-04.

SUBSTRATE PROCESSING SYSTEM, SUBSTRATE CLEANING METHOD, AND RECORDING MEDIUM

Номер патента: US20190118227A1. Автор: KANNO Itaru,Yoshida Yuki,MOCHIDA Kenji,Yamashita Masami,Kawano Hisashi,AIBARA Meitoku,SHIMA Motoyuki. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2019-04-25.

SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND COMPUTER READABLE RECORDING MEDIUM

Номер патента: US20210208504A1. Автор: Yamauchi Takashi,Enomoto Masashi,KAWAKAMI Shinichiro. Владелец: . Дата публикации: 2021-07-08.

Optical semiconductor device and method of manufacturing optical semiconductor device

Номер патента: US8798110B2. Автор: Tatsuya Takeuchi,Taro Hasegawa. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2014-08-05.

Semiconductor device and method of manufacturing the same

Номер патента: US5889335A. Автор: Takashi Kuroi,Hirokazu Sayama,Maiko Sakai,Katsuyuki Horita. Владелец: Mitsubishi Electric Corp. Дата публикации: 1999-03-30.

Semiconductor substrate processing methods

Номер патента: US11823953B2. Автор: Michael J. Seddon. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2023-11-21.

Semiconductor device and method of manufacture

Номер патента: WO2019020869A1. Автор: Vicente Calvo Alonso,Jouko LÅNG,Johnny Dahl. Владелец: Comptek Solutions Oy. Дата публикации: 2019-01-31.

Semiconductor substrate processing methods

Номер патента: US20190363016A1. Автор: Michael J. Seddon. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2019-11-28.

Semiconductor substrate processing methods

Номер патента: US20210375679A1. Автор: Michael J. Seddon. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2021-12-02.

Redistribution Layers And Methods Of Fabricating The Same In Semiconductor Devices

Номер патента: US20210098400A1. Автор: Hsiang-Ku Shen,Dian-Hau Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Semiconductor device with single-crystal nanowire finfet

Номер патента: US20180102411A1. Автор: Hsin-Yu Chen,Sheng-Hao Lin,Huai-Tzu Chiang,Hao-Ming Lee. Владелец: United Microelectronics Corp. Дата публикации: 2018-04-12.

Micro-pattern forming method, capacitor and method of manufacturing the same, semiconductor device and method of manufacturing the same, and electronic system including semiconductor device

Номер патента: US20190157276A1. Автор: JAE-HEE KIM,SOON-MOK HA,Jong-Hyuk Kim,Chan Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-23.

Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method, and recording medium

Номер патента: US09543220B2. Автор: Takeo Sato. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-01-10.

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods

Номер патента: US09748304B2. Автор: Szu-Ying Chen,Dun-Nian Yaung,Jen-Cheng Liu,Jeng-Shyan Lin,Shu-Ting Tsai,U-Ting CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Method of manufacturing multi-die semiconductor devices

Номер патента: EP4016614A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-06-22.

Method of manufacturing stacked-type semiconductor device

Номер патента: US20090191666A1. Автор: Souu Kumagai. Владелец: Disco Corp. Дата публикации: 2009-07-30.

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages

Номер патента: US09773724B2. Автор: Szu Wei Lu,Jing-Cheng Lin,Po-Hao Tsai,Ying-Ching Shih,I-Ting Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Method of manufacturing high-voltage semiconductor device and low-voltage semiconductor device

Номер патента: US7910466B2. Автор: Choul Joo Ko. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2011-03-22.

Semiconductor device and method of manufacturing the same semiconductor device

Номер патента: US09865502B2. Автор: Kenro Nakamura. Владелец: Toshiba Memory Corp. Дата публикации: 2018-01-09.

Method of manufacturing multi-die semiconductor devices and corresponding multi-die semiconductor device

Номер патента: US20240249955A1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-07-25.

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Номер патента: US09865578B2. Автор: Wei Zhou,Sony Varghese,Aibin Yu,Zhaohui Ma,Jonathan S. Hacker,Bret K. Street,Shijian Luo. Владелец: Micron Technology Inc. Дата публикации: 2018-01-09.

Method of making a charge compensation semiconductor device using direct bonding and corresponding device

Номер патента: EP1119871A1. Автор: Raymond J. Grover. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-08-01.

Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device

Номер патента: US09825170B2. Автор: Till Schloesser,Franz Hirler,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-21.

Substrate cartridge, substrate processing apparatus, substrate processing system, control apparatus, and method of manufacturing display element

Номер патента: US8801307B2. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2014-08-12.

Method of making a plurality of semiconductor devices

Номер патента: US09859184B2. Автор: Hans-Martin Ritter,Frank Burmeister. Владелец: Nexperia BV. Дата публикации: 2018-01-02.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: EP3504734A1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: Qualcomm Inc. Дата публикации: 2019-07-03.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: US09837302B1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: Qualcomm Inc. Дата публикации: 2017-12-05.

Methods of reinforcing integrated circuitry of semiconductor devices and related semiconductor devices and packages

Номер патента: US20190393110A1. Автор: AJAY Kumar,John House,Hyunsoo Yeom. Владелец: Microchip Technology Inc. Дата публикации: 2019-12-26.

Board for mounting BGA semiconductor chip thereon, semiconductor device, and methods of fabricating such board and semiconductor device

Номер патента: US20050156326A1. Автор: Toshihide Ito. Владелец: NEC Toppan Circuit Solutions Inc. Дата публикации: 2005-07-21.

Method of controlling adherence of microparticles to substrate to be processed, and processing apparatus

Номер патента: US09892951B2. Автор: Kazuki Moyama,Takehiro Tanikawa. Владелец: Tokyo Electron Ltd. Дата публикации: 2018-02-13.

Method of manufacturing GaN-based semiconductor device

Номер патента: US8633087B2. Автор: Hideki Matsubara,Kuniaki Ishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2014-01-21.

Method of forming buried wiring in semiconductor device

Номер патента: US20050186795A1. Автор: Kazuhide Abe. Владелец: Individual. Дата публикации: 2005-08-25.

Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation

Номер патента: US20090029521A1. Автор: Dong Sun Sheen,Sang Tae Ahn,Seok Pyo Song,Hyeon Ju An. Владелец: Individual. Дата публикации: 2009-01-29.

Wiring structure and method of forming the same, and semiconductor device including the wiring structure

Номер патента: US09716043B2. Автор: Jeong-Hoon Ahn,Sang-Chul Lee,In-Hwan Kim,Jun-Jung Kim,Joon-Nyung Lee,Yeon-Joo Kim,Jin-Hyeung PARK,Kyoung-Pil Park,Hyo-Seon LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-25.

Method of manufacturing 3-D semiconductor device

Номер патента: US10636699B2. Автор: Zongliang Huo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-04-28.

Method of making openings in a semiconductor device with reduced residue by transferring layers

Номер патента: US09431291B2. Автор: Keisuke Nakazawa. Владелец: Toshiba Corp. Дата публикации: 2016-08-30.

Method of manufacturing multi-die semiconductor devices and corresponding multi-die semiconductor device

Номер патента: US11948806B2. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-04-02.

Method of manufacturing conductors and semiconductor device which includes conductors

Номер патента: US20180151552A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-31.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4125121A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-02-01.

Semiconductor device and method of manufacturing such a semiconductor device

Номер патента: EP1784857A1. Автор: Robertus A. M. Wolters,Robert Lander,Jacob C. Hooker. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2007-05-16.

Method of manufacturing resin-encapsulated semiconductor device package using photoresist or pre-peg lead frame dam bars

Номер патента: US5258331A. Автор: Takashi Nakashima,Kenji Masumoto. Владелец: Texas Instruments Inc. Дата публикации: 1993-11-02.

Method of manufacturing conductors for semiconductor device

Номер патента: US20230335545A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-19.

Substrate processing system, aligning apparatus, and substrate shape monitoring method

Номер патента: US20230294932A1. Автор: Kento TOKAIRIN. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-09-21.

Resin-sealed semiconductor device, circuit member for use therein and method of manufacturing resin-sealed semiconductor device

Номер патента: US6025640A. Автор: Hiroshi Yagi,Masato Sasaki,Kazuyoshi Togashi. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2000-02-15.

Method of manufacturing a multilayer semiconductor device

Номер патента: US4596604A. Автор: Shin-ichi Ogawa,Yasuaki Terui,Shigenobu Akiyama. Владелец: Agency of Industrial Science and Technology. Дата публикации: 1986-06-24.

Method of manufacturing interconnection and semiconductor device

Номер патента: US8940628B2. Автор: Tadashi Sakai,Yuichi Yamazaki. Владелец: Toshiba Corp. Дата публикации: 2015-01-27.

Semiconductor device and method of manufacturing the same semiconductor device

Номер патента: US20160268163A1. Автор: Kenro Nakamura. Владелец: Toshiba Corp. Дата публикации: 2016-09-15.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240047532A1. Автор: Shingo Hayashi,Yasuyuki Hoshi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-08.

Semiconductor device and a method of manufacture of a semiconductor device

Номер патента: US20220045222A1. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2022-02-10.

Method and system of manufacturing conductors and semiconductor device which includes conductors

Номер патента: US20190371784A1. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Ko-Bin Kao,Charles Chew-Yuen Young,Kam-Tou SIO,Shun Li CHEN,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-12-05.

Developing Method, Developing Apparatus, and Computer-Readable Recording Medium

Номер патента: US20160026087A1. Автор: Yuichi Terashita,Hirofumi Takeguchi,Tomohiro Iseki. Владелец: Tokyo Electron Ltd. Дата публикации: 2016-01-28.

A semiconductor device and a method of manufacture of a semiconductor device

Номер патента: EP3951884A1. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2022-02-09.

Semiconductor device and a method of manufacture of a semiconductor device

Номер патента: US11984515B2. Автор: VASANTHA KUMAR Vaddagere Nagaraju,Hans-Martin Ritter,Steffen Holland,Joachim Utzig,Guido Notermans. Владелец: Nexperia BV. Дата публикации: 2024-05-14.

Methods of forming a device having semiconductor devices on two sides of a buried dielectric layer

Номер патента: WO2018038865A1. Автор: Sinan Goktepeli,Stephen Alan Fanelli. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2018-03-01.

Method of producing epoxy resin encapsulated semiconductor device

Номер патента: MY112215A. Автор: ITO Hideo,MINAMI Katsunori. Владелец: Sumitomo Bakelite Co. Дата публикации: 2001-04-30.

Method of forming conductive layer and semiconductor device

Номер патента: US20120189781A1. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-07-26.

Method of forming conductive layer and semiconductor device

Номер патента: US8173542B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-05-08.

Method of forming conductive layer and semiconductor device

Номер патента: US8273656B2. Автор: Takashi Sakaki. Владелец: Canon Inc. Дата публикации: 2012-09-25.

Process of manufacturing trench gate semiconductor device

Номер патента: EP2020681A3. Автор: Richard K. Williams,Wayne B. Grabowski. Владелец: Advanced Analogic Technologies Inc. Дата публикации: 2009-06-10.

Method of fabricating hybrid impact-ionization semiconductor device

Номер патента: US20110227161A1. Автор: Ming Zhu,Lee-Wee Teo,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2011-09-22.

Methods of designing and fabricating a semiconductor device based on determining a least common multiple between select layout pitches

Номер патента: US11854976B2. Автор: Seung Young Lee,Sanghoon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-26.

Method of forming metal lines of semiconductor device

Номер патента: US20120040527A1. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-02-16.

Method of forming metal lines of semiconductor device

Номер патента: US8193088B2. Автор: Suk Joong Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-05.

Method of detecting failure of a semiconductor device

Номер патента: US20190385918A1. Автор: ZHAN Zhan,Ji-Young Choi,Ju-Hyun Kim,Hwa-Sung Rhee,Sung-Gun Kang,Min-Seob KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-12-19.

Method of forming isolation layer of semiconductor device

Номер патента: US7682928B2. Автор: Myung IL Kang. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2010-03-23.

Method of forming buried wiring in semiconductor device

Номер патента: US6903020B2. Автор: Kazuhide Abe. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2005-06-07.

Butted contacts and methods of fabricating the same in semiconductor devices

Номер патента: US12002756B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

Method of manufacturing silicon carbide semiconductor device

Номер патента: US20150371856A1. Автор: Hiroyuki Kitabayashi. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2015-12-24.

Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, silicon carbide semiconductor device, and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240204051A1. Автор: Takeshi Tawara,Shinsuke Harada,Kensuke Takenaka. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-06-20.

Method of manufacturing nitride semiconductor device

Номер патента: US09691875B2. Автор: Hajime Sasaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-06-27.

Joining electrode, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Номер патента: US8884439B2. Автор: Kenichi Aoyagi. Владелец: Sony Corp. Дата публикации: 2014-11-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US12027617B2. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-07-02.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20210074849A1. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2021-03-11.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20180308937A1. Автор: Akira Saito,Takayuki Hirose,Yutaka Terao,Hideaki Teranishi,Aki Takigawa. Владелец: Fuji Electric Co Ltd. Дата публикации: 2018-10-25.

Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same

Номер патента: US20200075398A1. Автор: Gihwan KIM,Hyo-Jung Kim,Geunwon LIM,Miso SHIN,Chungki MIN,Sanghyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-05.

Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same

Номер патента: US20220139766A1. Автор: Gihwan KIM,Hyo-Jung Kim,Geunwon LIM,Miso SHIN,Chungki MIN,Sanghyeok KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-05.

Connector formation methods and packaged semiconductor devices

Номер патента: US09691723B2. Автор: Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng,Hao-Cheng Hou,Hai-Ming Chen,Hung-Jen Lin,Chun-Chih Chuang,Ming-Che Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-27.

Connector Formation Methods and Packaged Semiconductor Devices

Номер патента: US20220359436A1. Автор: Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng,Hao-Cheng Hou,Hai-Ming Chen,Hung-Jen Lin,Chun-Chih Chuang,Ming-Che Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Connector Formation Methods and Packaged Semiconductor Devices

Номер патента: US20170352632A1. Автор: Chien-Hsun Lee,Tsung-Ding Wang,Jung Wei Cheng,Hao-Cheng Hou,Hai-Ming Chen,Hung-Jen Lin,Chun-Chih Chuang,Ming-Che Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-07.

Semiconductor device and manufacturing method thereof

Номер патента: US20010049191A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2001-12-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20030124811A1. Автор: Hiroaki Uchida. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2003-07-03.

Substrate processing method, method of manufacturing semiconductor device, program and substrate processing apparatus

Номер патента: EP4343821A1. Автор: Hirohisa Yamazaki. Владелец: Kokusai Electric Corp. Дата публикации: 2024-03-27.

Active structures of a semiconductor device and methods of manufacturing the same

Номер патента: US09768053B2. Автор: Dae-won Kim,Jae-Kyu Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

Method of manufacturing semiconductor device, method of manufacturing electronic device, semiconductor device and electronic device

Номер патента: TW201939610A. Автор: 小泉翔平. Владелец: 日商尼康股份有限公司. Дата публикации: 2019-10-01.

Semiconductor device manufacturing method

Номер патента: RU2680989C1. Автор: Гасан Абакарович Мустафаев,Асламбек Идрисович Хасанов,Руслан Азаевич Кутуев,Арслан Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет". Дата публикации: 2019-03-01.

Method of cleaning members in a depressurized processing chamber and substrate processing apparatus

Номер патента: TW200514159A. Автор: Hiroyuki Nakayama,Tsuyoshi Moriya,Hiroshi Nagaike. Владелец: Tokyo Electron Ltd. Дата публикации: 2005-04-16.

Method of fabricating semiconductor device

Номер патента: US20170025519A1. Автор: Yikun Chen,Duan Quan Liao,Ching Hwa Tey. Владелец: United Microelectronics Corp. Дата публикации: 2017-01-26.

Method of fabricating semiconductor device

Номер патента: US09583594B2. Автор: Yikun Chen,Duan Quan Liao,Ching Hwa Tey. Владелец: United Microelectronics Corp. Дата публикации: 2017-02-28.

Method of forming semiconductor device using etch stop layer

Номер патента: US09564357B2. Автор: Fang-I Chih,Yen-Chang Chao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-07.

Methods of forming patterns of semiconductor devices

Номер патента: US09779941B2. Автор: Seok-Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-03.

Method for fabricating semiconductor device

Номер патента: US09679816B2. Автор: Yu-Cheng Tung,En-Chiuan Liou. Владелец: United Microelectronics Corp. Дата публикации: 2017-06-13.

Semiconductor device and method for fabricating the same

Номер патента: US09406521B1. Автор: Yu-Cheng Tung,En-Chiuan Liou. Владелец: United Microelectronics Corp. Дата публикации: 2016-08-02.

Methods of forming products with FinFET semiconductor devices without removing fins in certain areas of the product

Номер патента: US09543416B2. Автор: Min Gyu Sung,Ryan Ryoung-Han Kim. Владелец: Globalfoundries Inc. Дата публикации: 2017-01-10.

Semiconductor device and formation thereof

Номер патента: US09991169B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-05.

Semiconductor device and formation thereof

Номер патента: US09450096B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Method for manufacturing a semiconductor device

Номер патента: US10978308B2. Автор: Masaaki Kanazawa. Владелец: Renesas Electronics Corp. Дата публикации: 2021-04-13.

Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device

Номер патента: US09958794B2. Автор: Eishi Shiobara. Владелец: Toshiba Corp. Дата публикации: 2018-05-01.

Optoelectronic Semiconductor Device and Method of Manufacturing an Optoelectronic Semiconductor Device

Номер патента: US20190348568A1. Автор: Harald KÖNIG,Alfred Lell,Sven GERHARD,Jens Ebbecke,Clemens Vierheilig. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2019-11-14.

Methods of manufacturing capacitors for semiconductor devices

Номер патента: US09496328B2. Автор: Sun Ho Kim,Hyun Jun Kim,Young Geun Park,Se Hyoung Ahn,Chang Mu An,Bong Hyun Kim,Jong Bom Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices

Номер патента: US09450071B2. Автор: Jong-Seob Kim,In-jun Hwang,Jai-Kwang Shin,Jae-joon Oh,Hyuk-soon Choi,Ki-ha Hong,Ho-Jung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-20.

Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device

Номер патента: US09716168B2. Автор: Shunichi Nakamura,Akihiko Sugai,Tetsuto INOUE. Владелец: Shindengen Electric Manufacturing Co Ltd. Дата публикации: 2017-07-25.

Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device

Номер патента: US5977615A. Автор: Yukio Yamaguchi,Toru Nomura,Masanori Minamio,Akira Oga. Владелец: Matsushita Electronics Corp. Дата публикации: 1999-11-02.

Substrate for semiconductor devices, method of manufacturing substrate for semiconductor devices, and solid-state imaging device

Номер патента: US20150263212A1. Автор: Hideo Numata,Mokuji Kageyama,Shinji Uya,Nagataka Tanaka. Владелец: Toshiba Corp. Дата публикации: 2015-09-17.

Optical semiconductor device, optoelectronic device and method of manufacturing an optical semiconductor device

Номер патента: WO2023165869A1. Автор: Jens Hofrichter. Владелец: Ams-Osram Ag. Дата публикации: 2023-09-07.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US11742392B2. Автор: Shingo Hayashi,Takumi Fujimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-08-29.

Method of manufacturing resin-encapsulated semiconductor device, and lead frame

Номер патента: US09679835B2. Автор: Shinya Kubota,Masaru Akino. Владелец: Ablic Inc. Дата публикации: 2017-06-13.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20170199957A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-13.

Methods of forming conductive materials on semiconductor devices, and methods of forming electrical interconnects

Номер патента: US09768134B2. Автор: Anilkumar Chandolu,Kenneth N. Hagen. Владелец: Micron Technology Inc. Дата публикации: 2017-09-19.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20190171789A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-06.

Optoelectronic semiconductor device comprising an al-containing layer and method of manufacturing the optoelectronic semiconductor device

Номер патента: WO2024184358A1. Автор: Xiaojun Chen,Jong Ho Na,Noor Afifa MOHD HANAFIAH,Muhammad Esmed Alif SAMSUDIN,Azharul Ariff KAMARULZAMAN. Владелец: Ams-Osram International Gmbh. Дата публикации: 2024-09-12.

Methods of forming 3-d integrated semiconductor devices having intermediate heat spreading capabilities

Номер патента: US20160190104A1. Автор: Thomas Werner,Frank Feustel,Michael Grillberger. Владелец: Globalfoundries Inc. Дата публикации: 2016-06-30.

Method of determining colorability of a semiconductor device and system for implementing the same

Номер патента: US20200117848A1. Автор: Chin-Chang Hsu,Hsien-Hsin Sean LEE,Jian-Yi Li,Wen-Ju Yang,Li-Sheng Ke,Chung-Yun CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-16.

Method of making a low noise semiconductor device comprising a screening measurement

Номер патента: US5683917A. Автор: Cuong Tran,Ralph Francis Trambarulo,Samuel Suresh Martin. Владелец: Lucent Technologies Inc. Дата публикации: 1997-11-04.

Method of wire bonding of a semiconductor device for resolving oxidation of copper bonding pad

Номер патента: US20040082174A1. Автор: Yu-Chun Huang,Ning Huang,Wen-Tsung Weng,Wen-Lo Shieh,Hui-Pin Chen,Fu-Yu Huang,Chia-Ling Lu,Chih-Yu Tsai,Shu-Wan Lu,Mei-Hua Chen,Yu-Ju Wang,Ya-Hsin Tseng,Zhe-Sung Wu,Tzu-Lin Liu. Владелец: Individual. Дата публикации: 2004-04-29.

Method of fabricating memory cell in semiconductor device

Номер патента: US20050189581A1. Автор: Tae Park. Владелец: DongbuAnam Semiconductor Inc. Дата публикации: 2005-09-01.

Method of wafer-scale integration of semiconductor devices and semiconductor device

Номер патента: US09608035B2. Автор: Franz Schrank,Cathal Cassidy,Joerg Siegert. Владелец: ams AG. Дата публикации: 2017-03-28.

Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

Номер патента: US09711633B2. Автор: Sten Heikman,Scott T. Sheppard,Yifeng Wu,Matthew Jacob-Mitos,R. Peter Smith. Владелец: Cree Inc. Дата публикации: 2017-07-18.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20210328141A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-10-21.

Method of producing a radiation sensor semiconductor device comprising a multiple colour filter

Номер патента: WO2014127988A1. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2014-08-28.

Method of producing a radiation sensor semiconductor device comprising a multiple color filter

Номер патента: US09837573B2. Автор: Rainer Minixhofer. Владелец: ams AG. Дата публикации: 2017-12-05.

Fabricating method of lateral-diffused metal oxide semiconductor device

Номер патента: US09780171B2. Автор: Ming-Shing Chen,Wei-Ting Wu,Ming-Hui Chang,Chao-Chun Ning. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Method of manufacturing method a semiconductor device, a semiconductor device manufactured using this method and a mosfet device manufactured according to the method

Номер патента: US20240162334A1. Автор: Kilian ONG,Aryadeep Mrinal,Dnyanesh Havaldar. Владелец: Nexperia BV. Дата публикации: 2024-05-16.

Gate spacers and methods of forming the same in semiconductor devices

Номер патента: US20240266224A1. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Method of mounting semiconductor element, and semiconductor device

Номер патента: US09615464B2. Автор: Takashi Kubota,Hidehiko Kira,Masayuki Kitajima,Takatoyo Yamakami. Владелец: Fujitsu Ltd. Дата публикации: 2017-04-04.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287598A1. Автор: Takayuki SHIMATOU. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

Method of manufacturing integrated circuit semiconductor device

Номер патента: US4806457A. Автор: Masayuki Yanagisawa. Владелец: NEC Corp. Дата публикации: 1989-02-21.

Method of manufacturing super-junction semiconductor device

Номер патента: US20110287617A1. Автор: Naoko Kodama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-11-24.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20220254917A1. Автор: Masaki Miyazato,Yohei Kagoyama. Владелец: Fuji Electric Co Ltd. Дата публикации: 2022-08-11.

Method of manufacturing trench type semiconductor device

Номер патента: US20220157958A1. Автор: Jau-Yan Lin. Владелец: Advanced Power Electronics Corp USA. Дата публикации: 2022-05-19.

Method of manufacturing capacitors for semiconductor devices

Номер патента: US7163859B2. Автор: Dong-Woo Kim,Jae-hee Oh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-01-16.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240063269A1. Автор: Akimasa Kinoshita. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-02-22.

Semiconductor Device Including a Transistor Array and a Termination Region and Method of Manufacturing Such a Semiconductor Device

Номер патента: US20180026133A1. Автор: Till Schloesser,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-25.

Semiconductor Device and a Method of Manufacturing of a Semiconductor Device

Номер патента: US20240079494A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-07.

A semiconductor device and a method of manufacturing of a semiconductor device

Номер патента: EP4333074A1. Автор: Manoj Kumar,Kilian ONG. Владелец: Nexperia BV. Дата публикации: 2024-03-06.

Method of manufacturing a tab semiconductor device

Номер патента: US5972739A. Автор: Koji Matsui,Yoshitsugu Funada. Владелец: NEC Corp. Дата публикации: 1999-10-26.

Method of manufacturing radiation-emitting semiconductor devices

Номер патента: US5358897A. Автор: Adriaan Valster,Coen T. H. F. Liedenbaum. Владелец: US Philips Corp. Дата публикации: 1994-10-25.

Methods of manufacturing vertical channel semiconductor devices

Номер патента: US7781287B2. Автор: Dong-gun Park,Choong-ho Lee,Jae-Man Yoon,Seong-Goo Kim,Seung-Bae Park,Won-sok Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-24.

Developing method, developing apparatus, and computer-readable recording medium

Номер патента: US10120286B2. Автор: Yuichi Terashita,Hirofumi Takeguchi,Tomohiro Iseki. Владелец: Tokyo Electron Ltd. Дата публикации: 2018-11-06.

Method of controlling performance boosting of semiconductor device and semiconductor device performing the method

Номер патента: US20210057420A1. Автор: Sangkyu Kim,Jungwook Kim,Jonglae Park,Hyunju KANG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Method of fabricating vertical structure compound semiconductor devices

Номер патента: US20060148115A1. Автор: Myung Yoo. Владелец: Supergate Technology USA Inc. Дата публикации: 2006-07-06.

System and method of determining pulse properties of semiconductor device

Номер патента: US7495456B2. Автор: Hideki Horii,Yong-ho Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-02-24.

Fabricating method of trench-gate metal oxide semiconductor device

Номер патента: US20140094013A1. Автор: Kuan-Ling LIU,Shih-Yuan UENG. Владелец: United Microelectronics Corp. Дата публикации: 2014-04-03.

Methods of forming connection bump of semiconductor device

Номер патента: US20130082090A1. Автор: Sun-Hee Park,Moon-Gi Cho,Hwan-Sik Lim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-04-04.

Methods of removing photoresist and fabricating semiconductor devices

Номер патента: US20070093031A1. Автор: Min-Chieh Yang,Wen-Hsien Huang,Jiunn-Hsing Liao. Владелец: United Microelectronics Corp. Дата публикации: 2007-04-26.

Method of making metal electrode of semiconductor device

Номер патента: US4293637A. Автор: Kenzo Hatada,Takao Kajiwara. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1981-10-06.

Structure and method of power supply routing in semiconductor device

Номер патента: US20230369310A1. Автор: Shih-Wei Peng,Jiann-Tyng Tzeng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Bending and forming method of fabricating exposed leadframes for semiconductor devices

Номер патента: SG71148A1. Автор: David R Kee,Buford H Carter Jr,Jesse E Clark. Владелец: Texas Instruments Inc. Дата публикации: 2000-03-21.

Stack type semiconductor device and method of testing the stack type semiconductor device

Номер патента: US20230307420A1. Автор: Seong Hwi Song. Владелец: SK hynix Inc. Дата публикации: 2023-09-28.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20220255000A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-11.

Method of preventing dielectric breakdown of semiconductor device and semiconductor device preventing dielectric breakdown

Номер патента: US20070253276A1. Автор: Tsuneo Ochi. Владелец: Kawasaki Microelectronics Inc. Дата публикации: 2007-11-01.

Semiconductor element mounting member, method of producing the same, and semiconductor device

Номер патента: US20120292769A1. Автор: Eiji Kamijo,Kouichi Takashima,Yoshifumi Aoi. Владелец: ALMT Corp. Дата публикации: 2012-11-22.

Semiconductor device including crack detection structure and method of detecting progressive crack in semiconductor device

Номер патента: US20240222205A1. Автор: Sungho Park,Younggu KANG,Chulhee JEON,Inho LIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-07-04.

Method of alignment mark protection and semiconductor device formed thereby

Номер патента: US20110304006A1. Автор: Chih-Hao Huang,Chiao-Wen Yeh. Владелец: Macronix International Co Ltd. Дата публикации: 2011-12-15.

Method of making a thin film semiconductor device

Номер патента: US5897344A. Автор: Satoshi Teramoto,Yasuhiko Takemura,Hongyong Zhang. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1999-04-27.

Gate spacers and methods of forming the same in semiconductor devices

Номер патента: US11967532B2. Автор: Jhon Jhy Liaw,Chih-Yung Lin,Ta-Chun Lin,Kuo-Hua Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Structure and method of forming a multiple leadframe semiconductor device

Номер патента: US20030209804A1. Автор: James Knapp,Stephen Germain. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2003-11-13.

Curable liquid composition, method of coating, inorganic substrate, and semiconductor device

Номер патента: EP2118175A2. Автор: Maki Itoh,Yukinari Harimoto,Elias Dimitris Katsoulis. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2009-11-18.

Semiconductor device, nonvolatile storage apparatus, multiply-accumulate operation apparatus, and manufacturing method for a semiconductor device

Номер патента: US20220276836A1. Автор: Masanori Tsukamoto. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2022-09-01.

Semiconductor device having ring-shaped gate electrode, design apparatus, and program

Номер патента: US8552510B2. Автор: Takamitsu Onda. Владелец: Elpida Memory Inc. Дата публикации: 2013-10-08.

Semiconductor device and method of manufacturing the same

Номер патента: US20020019129A1. Автор: Masahiro Shimizu. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-02-14.

Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer

Номер патента: US09812350B2. Автор: Julio C. Costa. Владелец: Qorvo US Inc. Дата публикации: 2017-11-07.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US20200294815A1. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-09-17.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US20190237343A1. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Inc. Дата публикации: 2019-08-01.

Semiconductor device with tiered pillar and manufacturing method thereof

Номер патента: US10748786B2. Автор: Ronald Patrick Huemoeller,Michael G. Kelly,Curtis Zwenger. Владелец: Amkor Technology Inc. Дата публикации: 2020-08-18.

Optical semiconductor device and method of manufacturing thereof

Номер патента: EP1812972A1. Автор: Yoshitsugu Dow Corning Toray Co. Ltd. MORITA,Tomoko Dow Corning Toray Co. Ltd. KATO. Владелец: Dow Corning Toray Co Ltd. Дата публикации: 2007-08-01.

Packaging devices and methods of manufacture thereof

Номер патента: US09472522B2. Автор: Jie Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-18.

Packaging devices and methods of manufacture thereof

Номер патента: US09633963B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Manufacturing method of semiconductor device and semiconductor device

Номер патента: US09484387B2. Автор: Makoto Shizukuishi. Владелец: Individual. Дата публикации: 2016-11-01.

Packaging devices and methods of manufacture thereof

Номер патента: US09418952B2. Автор: Jie Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-16.

Method of manufacturing nitride semiconductor device

Номер патента: US20130143373A1. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-06-06.

Method of manufacturing a semiconductor device having a multi-layered wiring structure

Номер патента: US7189637B2. Автор: Kazuhiko Sato,Katsuhiko Hotta,Naokatsu Suwanai,Masashi Sahara,Atsushi Tachigami,Ken Uchikoshi. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2007-03-13.

Packaged semiconductor devices and methods of packaging thereof

Номер патента: US10269693B2. Автор: Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-04-23.

Semiconductor device package and methods of manufacture thereof

Номер патента: US09799580B2. Автор: Li Li,Lakshminarayan Viswanathan,Jaynal A. Molla. Владелец: NXP USA Inc. Дата публикации: 2017-10-24.

Semiconductor device with embedded battery and method therefor

Номер патента: EP4269330A1. Автор: Stephen Ryan Hooper,Chayathorn Saklang,Chanon Suwankasab,Amornthep Saiyajitara,Jr. Crispulo Estira Lictao,Dominic Koey (Pohmeng). Владелец: NXP USA Inc. Дата публикации: 2023-11-01.

Semiconductor device manufacturing method, substrate processing device, and recording medium

Номер патента: TWI652727B. Автор: 森谷敦,中磯直春,宮倉敬弘,芳賀健佑. Владелец: 日商國際電氣股份有限公司. Дата публикации: 2019-03-01.

Semiconductor device packaging warpage control

Номер патента: EP4099367A2. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2022-12-07.

Semiconductor device with embedded battery and method therefor

Номер патента: US20230343683A1. Автор: Stephen Ryan Hooper,Chayathorn Saklang,Chanon Suwankasab,Amornthep Saiyajitara,Crispulo Estira Lictao, JR.,Dominic (PohMeng) Koey. Владелец: NXP USA Inc. Дата публикации: 2023-10-26.

Semiconductor device packaging warpage control

Номер патента: EP4099367A3. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2022-12-28.

Semiconductor device packaging warpage control

Номер патента: US12125716B2. Автор: Vivek Gupta,Michael B. Vincent,Scott M. Hayes,Zhiwei Gong,Richard Te GAN. Владелец: NXP USA Inc. Дата публикации: 2024-10-22.

Semiconductor device and method for manufacturing semiconductor device

Номер патента: US6787430B2. Автор: Jun Kanamori. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2004-09-07.

Contact pad for semiconductor devices

Номер патента: US09589891B2. Автор: Jie Chen,Hsien-Wei Chen,Ying-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-07.

Electric connection terminal and method of manufacturing the same, semiconductor device and method of mounting the same

Номер патента: US20050104213A1. Автор: Akiyoshi Aoyagi. Владелец: Seiko Epson Corp. Дата публикации: 2005-05-19.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: US20230031422A1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2023-02-02.

Packaged semiconductor device with a lead frame and method for forming

Номер патента: US09640466B1. Автор: Varughese Mathew,Sheila Chopin. Владелец: NXP USA Inc. Дата публикации: 2017-05-02.

Method of manufacturing semiconductor device and semiconductor device

Номер патента: US20130001549A1. Автор: Amane Oishi. Владелец: Toshiba Corp. Дата публикации: 2013-01-03.

Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device

Номер патента: US09812376B2. Автор: Michael Nelhiebel,Stefan Woehlert,Siegfried Roehl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2017-11-07.

Device for holding multiple semiconductor devices during thermocompression bonding and method of bonding

Номер патента: US09484241B2. Автор: Chun Ho Fan,Man Chung CHAN. Владелец: ASM TECHNOLOGY SINGAPORE PTE LTD. Дата публикации: 2016-11-01.

Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device

Номер патента: KR101007595B1. Автор: 타케시 코바야시,히사오 스고우. Владелец: 파나소닉 주식회사. Дата публикации: 2011-01-12.

Layout of semiconductor device, semiconductor device and method of forming the same

Номер патента: US10553577B2. Автор: Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2020-02-04.

Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device

Номер патента: US20020098672A1. Автор: Theodore Houston. Владелец: Individual. Дата публикации: 2002-07-25.

Semiconductor device and method of forming the same

Номер патента: US20210391327A1. Автор: Jhon-Jhy Liaw,Chun-Sheng Liang,Hsin-Che Chiang,Kuo-Hua Pan,Yu-San Chien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-16.

Vertical type semiconductor devices including a metal gate and methods of forming the same

Номер патента: US9093547B2. Автор: Chang-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-07-28.

Vertical type semiconductor devices including a metal gate and methods of forming the same

Номер патента: US20140203346A1. Автор: Chang-Hyun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-07-24.

Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device

Номер патента: EP4125121B1. Автор: Mauro Mazzola. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-08-28.

Wire ball bonding in semiconductor devices

Номер патента: WO2019136743A1. Автор: HAN Zhong,CHEN XIONG,Xi Lin Li,Zi Qi Wang,Yong Qiang Tang. Владелец: Texas Instruments Japan Limited. Дата публикации: 2019-07-18.

Wire ball bonding in semiconductor devices

Номер патента: US20190221537A1. Автор: HAN Zhong,CHEN XIONG,Xi Lin Li,Zi Qi Wang,Yong Qiang Tang. Владелец: Texas Instruments Inc. Дата публикации: 2019-07-18.

Semiconductor device including separation pattern penetrating gate structure and method of fabricating the same

Номер патента: US12132046B2. Автор: Mirco Cantoro,Dong Il Bae,Ho-jun Kim,Beomjin PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-29.

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Номер патента: US20200152577A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-14.

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Номер патента: US20190295958A1. Автор: Ji Won Kang,Tae Yeol Kim,Sang Jin HYUN,Jin Il Lee,Chung Hwan Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-26.

Vertical semiconductor device in narrow slots within trench

Номер патента: US20230178599A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-06-08.

Semiconductor device and method of forming the same

Номер патента: US20230032528A1. Автор: Chien-Hao Huang,Katherine H. Chiang,Ming-Yen Chuang,Yun-Feng KAO,Gao-Ming Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-02.

Semiconductor device and method of fabricating the same

Номер патента: US11314919B2. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-04-26.

Semiconductor device having polysilicon bit line contact

Номер патента: US7884441B2. Автор: Nam Yoon Kim. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-02-08.

Semiconductor device and method of fabricating the same

Номер патента: US20230223306A1. Автор: Wei-Lun Huang,Chia-Ling Wang,Ping-Hung Chiang,Ta-wei Chiu,Chia-Wen Lu. Владелец: United Microelectronics Corp. Дата публикации: 2023-07-13.

Semiconductor device and method of fabricating the same

Номер патента: US20240313097A1. Автор: Taehyun Kim,Junggil YANG,Taewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

Semiconductor device and method of fabricating the same

Номер патента: US12100624B2. Автор: Wei-Lun Huang,Chia-Ling Wang,Ping-Hung Chiang,Ta-wei Chiu,Chia-Wen Lu. Владелец: United Microelectronics Corp. Дата публикации: 2024-09-24.

Semiconductor device and method of fabricating the same

Номер патента: US20240265188A1. Автор: Bonghyun LEE,Yongdeok Kim,Munjun Seo. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2024-08-08.

Semiconductor device and method of forming the same

Номер патента: US09905464B2. Автор: Chao-Hung Lin,Chih-Kai Hsu,Ssu-I Fu,Yu-Hsiang Hung,Jyh-Shyang Jenq. Владелец: United Microelectronics Corp. Дата публикации: 2018-02-27.

Device with reinforced metal gate spacer and method of fabricating

Номер патента: US09780193B2. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Lung Chen,Chia-Lin Lu,Yu-Cheng Tung. Владелец: United Microelectronics Corp. Дата публикации: 2017-10-03.

Semiconductor device including air gaps and method of fabricating the same

Номер патента: US09627253B2. Автор: Min-ho Kim. Владелец: SK hynix Inc. Дата публикации: 2017-04-18.

Method of forming semiconductor device including source/drain contact having height below gate stack

Номер патента: US09478636B2. Автор: Ru-Gun Liu,Chih-Ming Lai,Chih-Liang Chen,Charles Chew-Yuen Young,Kam-Tou SIO,Meng-Hung Shen,Shu-Hui Sung,Chun-Hung Liou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-25.

Contact via structures of semiconductor devices

Номер патента: US20230395425A1. Автор: Yung Fu Chong,Rui Tze TOH,Fangyue Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-12-07.

Semiconductor device with at least one truncated corner and/or side cut-out

Номер патента: US20160211219A1. Автор: Petko Nedelev,Luc BUYDENS,Sam Maddalena. Владелец: MELEXIS TECHNOLOGIES NV. Дата публикации: 2016-07-21.

Semiconductor device and method of fabricating the same

Номер патента: US20170092771A1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-30.

Method of manufacturing multi-die semiconductor devices

Номер патента: EP4016614B1. Автор: Paolo Crema. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-03-13.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20100323520A1. Автор: Tae Kyung Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-12-23.

Methods of forming and operating semiconductor device

Номер патента: US20110194356A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-08-11.

Semiconductor device and methods of forming and operating the same

Номер патента: US20100001339A1. Автор: Yoon Kim,Byung-gook Park,Wook-Hyun Kwon,Yun-Heub Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-01-07.

Method of Forming Patterns of Semiconductor Device

Номер патента: US20120086134A1. Автор: Tae Kyung Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-04-12.

Method of manufacturing a lateral semiconductor device

Номер патента: EP1914797B1. Автор: Puo-Yu Chiang,Shun-Liang Hsu,Tsung-Yi Huang,Ruey-Hsien Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-08-12.

Method of manufacturing base for semiconductor device

Номер патента: JPS5270764A. Автор: Tokuo Satou. Владелец: Individual. Дата публикации: 1977-06-13.

Testing, manufacturing, and packaging methods for semiconductor devices

Номер патента: US09852957B2. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Der-Chyang Yeh,Chin-Hsien Chen,An-Jhih Su,Li-Hsien HUANG,Yan-Fu Lin,Yung-Shou Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-26.

Semiconductor device including cell region stacked on peripheral region and method of fabricating the same

Номер патента: US09666289B2. Автор: Sunghoon Kim,Jae-Eun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-05-30.

Semiconductor device and method for fabricating the same

Номер патента: US09653402B2. Автор: Chen-Ming Huang,I-Ming Tseng,Wen-An Liang. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-16.

Semiconductor device and method of fabricating the same

Номер патента: US09608126B1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

Attachment for substrates having different diameters, substrate processing apparatus, and method of manufacturing substrate or semiconductor device

Номер патента: US20120216743A1. Автор: Akinori Tanaka,Takeshi Itoh. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2012-08-30.

Substrate cartridge, substrate processing apparatus, substrate processing system, control apparatus, and method of manufacturing display element

Номер патента: TW201131855A. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2011-09-16.

Substrate cartridge, substrate processing apparatus, substrate processing system, control apparatus, and method of manufacturing display element

Номер патента: US20110085841A1. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2011-04-14.

Contact via structures of semiconductor devices

Номер патента: US11776844B2. Автор: Yung Fu Chong,Rui Tze TOH,Fangyue Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2023-10-03.

Semiconductor device and method of fabricating the same

Номер патента: US20210143182A1. Автор: Dong Min Kang,Hyung Sup Yoon,Sung-Bum BAE,Kyu Jun CHO,Sung-Jae Chang. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2021-05-13.

Methods of forming multiple n-type semiconductor devices with different threshold voltages on a semiconductor substrate

Номер патента: US20140227845A1. Автор: Yanxiang Liu,Manfred Eller,Johannes Van Meer. Владелец: Globalfoundries Inc. Дата публикации: 2014-08-14.

Semiconductor device and method of forming the same

Номер патента: US09524967B1. Автор: Yu-Ping Wang,Chien-Ming Lai,Ya-Huei Tsai,Ching-Hsiang Chiu,Hao-Yeh Liu,Mon-Sen Lin. Владелец: United Microelectronics Corp. Дата публикации: 2016-12-20.

WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE, METHOD OF FORMING PATTERN STRUCTURE, IMPRINT MOLD AND METHOD OF MANUFACTURING THE SAME, IMPRINT MOLD SET, AND METHOD OF MANUFACTURING MULTILAYER WIRING BOARD

Номер патента: US20180310413A1. Автор: Furukawa Tadashi,FURUSE Ayako,SOTODA Teppei,KASAI Ryohei,FURUGEN Ryo,HOSODA Tetsushi. Владелец: Dai Nippon Printing Co., Ltd.. Дата публикации: 2018-10-25.

Method and apparatus for manufacturing a packaged semiconductor device, packaged semiconductor device obtained with such a method and metal carrier suitable for use in such a method

Номер патента: AU2003255956A1. Автор: Frederik H. In 't Veld,Johannes H. Savenije. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2004-02-25.

Semiconductor device for low-power applications and a method of manufacturing thereof

Номер патента: US7985673B2. Автор: Viet Nguyen Hoang,Phillip Christie,Julien M. M. Michelon. Владелец: NXP BV. Дата публикации: 2011-07-26.

Method of fabricating hybrid impact-ionization semiconductor device

Номер патента: US09525040B2. Автор: Ming Zhu,Lee-Wee Teo,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-20.

Substrate-processing device, device management controller, and recording medium

Номер патента: WO2017168676A1. Автор: 一秀 浅井,一良 山本,秀元 林原,隆之 川岸,佳代子 屋敷,岩倉　裕幸. Владелец: 株式会社日立国際電気. Дата публикации: 2017-10-05.

Reduced Size Semiconductor Device And Method For Manufacture Thereof

Номер патента: US20160005468A1. Автор: Ya Jui Lee,Kaun Fu Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2016-01-07.

Apparatus and method for simultaneous formation of diffusion break, gate cut, and independent n and p gates for 3d transistor devices

Номер патента: WO2021025796A1. Автор: Jeffrey Smith,Daniel Chanemougame,Anton Devilliers,Lars Liebmann. Владелец: Tokyo Electron U.S. Holdings, Inc.. Дата публикации: 2021-02-11.

Substrate processing system, substrate processing method, verification program and computer readable recording medium recorded verification program

Номер патента: TWI325152B. Автор: Masato Nomura,Shuuji Oono,Katsuhisa Fujii,Toshifumi Sohara. Владелец: Tokyo Electron Ltd. Дата публикации: 2010-05-21.

Semiconductor inspecting apparatus and method of inspecting and manufacturing semiconductor device using the same

Номер патента: US20150270182A1. Автор: Jaehong Kim,Seung Hyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-09-24.

Method of forming fine holes in semiconductor device and method of manufacturing semiconductor device

Номер патента: JPH0618185B2. Автор: 徹志 酒井,邦彦 渡辺,俊彦 高倉,重雄 黒田,幹規 河路,裕幸 西沢. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 1994-03-09.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

Номер патента: US11757254B2. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2023-09-12.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

Номер патента: WO2021144377A1. Автор: Peter Fuchs,Thomas Falck,Hubert Halbritter,Christian Lauer,Ann RUSSELL,Bruno Jentzsch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2021-07-22.

Anode electrode structure, lithium-ion battery, method of making an anode electrode structure, method of making a lith him -i on battery, and substrate processing system for producing an anode electrode structure

Номер патента: WO2022039964A1. Автор: Roland Trassl. Владелец: Applied Materials, Inc.. Дата публикации: 2022-02-24.

Method of operating a coating system, controller for operating a coating system, electron catching apparatus, and coating system

Номер патента: WO2023143719A1. Автор: Torsten Bruno Dieter,Andreas JENDRZEY,Markus KLIEMT,Steffen BRAUNGER. Владелец: Applied Materials, Inc.. Дата публикации: 2023-08-03.

Semiconductor device manufacturing method, data generating apparatus, data generating method and recording medium readable by computer recorded with data generating program

Номер патента: US20110320987A1. Автор: Hiromi Hoshino. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-12-29.

Substrate cartridge, substrate-processing apparatus, substrate-processing system, substrate-processing method, control apparatus, and method of manufacturing display element

Номер патента: US09379339B2. Автор: Hideya Inoue. Владелец: Nikon Corp. Дата публикации: 2016-06-28.

Method for manufacturing semiconductor device, semiconductor manufacturing apparatus, and method for controlling transfer in production line

Номер патента: US20030204280A1. Автор: Yoshiaki Kobayashi. Владелец: Trecenti Technologies Inc. Дата публикации: 2003-10-30.

Compound semiconductor device and method of manufacturing compound semiconductor device

Номер патента: US20230036228A1. Автор: Yoshikazu Motoyama,Akito Iwao. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2023-02-02.

Superjunction semiconductor device and method of manufacturing same

Номер патента: US20230223436A1. Автор: Myeong Bum PYUN,Min Gi JO,Jin Young Goh. Владелец: DB HiTek Co Ltd. Дата публикации: 2023-07-13.

Method of manufacturing organic semiconductor device

Номер патента: US20200176697A1. Автор: Lixuan Chen. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-06-04.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20170179277A1. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2017-06-22.

Thin semiconductor device and method of manufacturing thin semiconductor device

Номер патента: US20240355719A1. Автор: Shun-Hsing Liao. Владелец: Shunsin Technology Zhongshan Ltd. Дата публикации: 2024-10-24.

Stackable semiconductor device with 2d material layer and methods of manufacturing thereof

Номер патента: US20230231058A1. Автор: Mark I. Gardner,H. Jim Fulford. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-07-20.

Method of manufacturing optical semiconductor device and optical semiconductor device

Номер патента: US12113155B2. Автор: Takashi Araki,Tsukasa Maruyama,Takehiro Miyaji. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2024-10-08.

Semiconductor device and method of manufacturing the same

Номер патента: US09812534B2. Автор: Naiqian Zhang,Fengli PEI. Владелец: Dynax Semiconductor Inc. Дата публикации: 2017-11-07.

Method of manufacturing semiconductor device including such input protection transistor

Номер патента: US5183773A. Автор: Kazuaki Miyata. Владелец: Mitsubishi Electric Corp. Дата публикации: 1993-02-02.

Semiconductor device having superlattice semiconductor layer and method of manufacturing the same

Номер патента: EP1505698B1. Автор: Won-seok Lee,Joon-seop Kwak,Kyoung-ho Ha,Ho-sun Paek,Sung-nam Lee,Tan B-502 Stbobo 2-cha Sakong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-09-09.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Номер патента: US20230055755A1. Автор: Yasuyuki Kawada. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-02-23.

High hole mobility transistor (HHMT) and method of manufacturing the same

Номер патента: US12136669B2. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2024-11-05.

Semiconductor device, method of manufacturing semiconductor device, and method of evaluating manufacturing process of semiconductor device

Номер патента: CN1306586C. Автор: 清水和宏. Владелец: Mitsubishi Electric Corp. Дата публикации: 2007-03-21.

Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus

Номер патента: TWI294688B. Автор: Tsukasa Eguchi,Hiroshi Sera. Владелец: Seiko Epson Corp. Дата публикации: 2008-03-11.

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Номер патента: US20240363696A1. Автор: Tsubasa HONKE,Takaya MIYASE,Taro Enokizono,Hiroki Nishihara. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-10-31.

Semiconductor device and formation thereof

Номер патента: US09698240B2. Автор: Mark Van Dal,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-04.

Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device

Номер патента: US6225146B1. Автор: Yukio Yamaguchi,Toru Nomura,Masanori Minamio,Akira Oga. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2001-05-01.

Semiconductor device and method of producing thereof

Номер патента: US20240113216A1. Автор: Carsten Schaeffer,Yuliya Lisunova,Andreas Frank Behrendt,Simon Paul Sindermann,Adriana Mercedes Sanchez Lotero,Silke Liebscher. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-04-04.

Transistors and methods of forming transistors using vertical nanowires

Номер патента: US20180233583A1. Автор: Alexander Reznicek,Dominic J. Schepis. Владелец: Globalfoundries Inc. Дата публикации: 2018-08-16.

Semiconductor device and method of operation

Номер патента: US20190123139A1. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2019-04-25.

Semiconductor device and method of operation

Номер патента: US20200066840A9. Автор: Adam Richard Brown,Steven Waterhouse,Saurabh Pandey,Phil Rutter,Jim Brett PARKIN. Владелец: Nexperia BV. Дата публикации: 2020-02-27.

Testing of semiconductor devices and devices, and designs thereof

Номер патента: US09945899B2. Автор: Stefano Aresu,Michael Roehner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-04-17.

Semiconductor device

Номер патента: US20160163653A1. Автор: Coenraad Cornelis Tak,Jeroen Antoon CROON. Владелец: NXP BV. Дата публикации: 2016-06-09.

Semiconductor Device and Method of Forming the Same

Номер патента: US20240194731A1. Автор: Tao DOU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-06-13.

Method to produce a 3d multilayer semiconductor device and structure

Номер патента: US20240274534A1. Автор: Zvi Or-Bach,Jin-Woo Han. Владелец: Monolithic 3D Inc. Дата публикации: 2024-08-15.

Semiconductor device and method of wire bonding for semiconductor device

Номер патента: US20040188858A1. Автор: Yoshifumi Watanabe. Владелец: Denso Corp. Дата публикации: 2004-09-30.

Method to produce a 3D multilayer semiconductor device and structure

Номер патента: US12100658B2. Автор: Zvi Or-Bach,Jin-Woo Han. Владелец: Monolithic 3D Inc. Дата публикации: 2024-09-24.

Semiconductor device and method of formation

Номер патента: US09525072B2. Автор: Si-Chen Lee,Meng-Yu Lin,Shih-Yen Lin. Владелец: National Taiwan University NTU. Дата публикации: 2016-12-20.

Semiconductor device comprising a stacked die configuration including an integrated peltier element

Номер патента: US09490189B2. Автор: Jan Hoentschel,Sven Beyer,Thilo Scheiper,Uwe Griebenow. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-08.

Semiconductor device and method of formation

Номер патента: US20160005830A1. Автор: Ming-Han Liao. Владелец: National Taiwan University NTU. Дата публикации: 2016-01-07.

Semiconductor device and method of forming the same

Номер патента: US20240312997A1. Автор: Chih-Hao Chang,Chun-Sheng Liang,Ta-Chun Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Semiconductor device and method of fabricating the same

Номер патента: EP4432340A1. Автор: Taehyun Kim,Junggil YANG,Taewon HA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-18.

Semiconductor device and method of fabricating the same

Номер патента: US12132106B2. Автор: Shin-Hung Li. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-29.

Semiconductor devices and methods of fabricating the same

Номер патента: US09978932B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-22.

Semiconductor device and method of formation

Номер патента: US09917169B2. Автор: Ming-Han Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-13.

Integrated fan-out package, semiconductor device, and method of fabricating the same

Номер патента: US09812426B1. Автор: Hsien-Wei Chen,Wei-Cheng Wu,Li-Han Hsu,Cheng-Hsien Hsieh,Tzu-Shiun Sheu,Yan-Fu Lin,Chin-te Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Semiconductor devices having dummy patterns and methods of fabricating the same

Номер патента: US09748257B2. Автор: Jaehan Lee,Won-Seok Jung,Kyungjoong JOO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof

Номер патента: US09590105B2. Автор: Cheng-Ting Chung,Chao-Hsin Chien,Che-Wei Chen. Владелец: National Chiao Tung University NCTU. Дата публикации: 2017-03-07.

Semiconductor device and method of fabricating the same

Номер патента: US09520556B2. Автор: Hideki Horii,Jeonghee Park,Sugwoo Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-13.

Semiconductor devices and methods of fabricating the same

Номер патента: US09496488B2. Автор: KEN Tokashiki,Vladimir Urazaev,Jongchul Park,Sangmin Lee,Gwang-Hyun Baek,Sechung Oh,Jaehun SEO,Hyungjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-15.

The image processing method and apparatus, the measurement apparatus and apparatus, the processing apparatus, the measuring apparatus and the exposure apparatus, the substrate processing system, and the computer-readable information recording medium

Номер патента: TWI461853B. Автор: 沖田晉一. Владелец: 尼康股份有限公司. Дата публикации: 2014-11-21.

Method of manufacturing super-junction semiconductor device

Номер патента: TW201145361A. Автор: Hitoshi Kuribayashi,Ayako YAJIMA,Akihiko Ohi,Masanobu IWAYA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2011-12-16.

Semiconductor structure, preparation method of same, and semiconductor device

Номер патента: US20220238639A1. Автор: Xianlei CAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-07-28.

Semiconductor device and method of fabricating the same

Номер патента: EP4386844A2. Автор: Jeongho Lee,Junsun HWANG,Sewoong PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-19.

Method of manufacturing point contact semiconductor devices

Номер патента: US3127659A. Автор: John V Jenkinson. Владелец: Microwave Associates Inc. Дата публикации: 1964-04-07.

Method of making silicon carbide semiconductor device

Номер патента: US7947555B2. Автор: Eiichi Okuno,Atsuya Akiba. Владелец: Denso Corp. Дата публикации: 2011-05-24.

Semiconductor device and method of fabricating the same

Номер патента: US12142587B2. Автор: Jinho PARK,Jeong Hoon Ahn,Chin Kim,Yongseung Bang,Jiyeon Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-12.

Semiconductor devices having a supporter and methods of fabricating the same

Номер патента: US09601494B2. Автор: Seung-Jun Lee,Dae-Ik Kim,Young-Seung Cho,Kyung-Eun KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-21.

Semiconductor device

Номер патента: US09837540B2. Автор: Chien-Hao Chen,En-Chiuan Liou,Tang-Chun Weng. Владелец: United Microelectronics Corp. Дата публикации: 2017-12-05.

Methods of forming fins for FinFET semiconductor devices and the selective removal of such fins

Номер патента: US09704973B2. Автор: Ruilong Xie,Andy C. Wei. Владелец: Globalfoundries Inc. Дата публикации: 2017-07-11.

Vertical non-planar semiconductor device for system-on-chip (SoC) applications

Номер патента: US09520494B2. Автор: Walid M. Hafez,Chia-Hong Jan,Jeng-Ya D. YEH,Joodong Park,Curtis Tsai. Владелец: Intel Corp. Дата публикации: 2016-12-13.

Semiconductor device and formation thereof

Номер патента: US09847233B2. Автор: Yen-Ting Chen,Chee-Wee Liu,I-Hsieh Wong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-19.

Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, IC card, and electronic appliance

Номер патента: EP2565924A3. Автор: Tatsuya Shimoda,Sumio Utsunomiya. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-02-26.

Structure and method of non-rectangular cell in semiconductor device

Номер патента: US12039242B2. Автор: Chung-Hsing Wang,Jerry Chang Jui Kao,Tzu-Ying LIN,Hui-Zhong ZHUANG,Jung-Chan YANG,Pochun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Processing apparatus, processing method and recording medium having program for controlling the processing apparatus

Номер патента: KR100976207B1. Автор: 토시히사 노자와,코지 코타니,코우지 타나카. Владелец: 도쿄엘렉트론가부시키가이샤. Дата публикации: 2010-08-17.

Base energy setting method of Auger electron spectroscopy analysis for titanium nitride film, and analyzing method of titanium nitride film and semiconductor devices having titanium nitride film thereby

Номер патента: TW502112B. Автор: Sang-eun Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2002-09-11.

Semiconductor device and a method of manufacturing the same

Номер патента: US4937645A. Автор: Osamu Tsuchiya,Fumio Ootsuka. Владелец: HITACHI LTD. Дата публикации: 1990-06-26.

Semiconductor device including a field effect transistor and a bipolar transistor and a method of manufacturing the same

Номер патента: US5471083A. Автор: Tatsuhiko Ikeda,Kazuhito Niwano. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-11-28.

Ferroelectric semiconductor device and method of manufacture

Номер патента: US5874755A. Автор: Daniel S. Marshall,William J. Ooms,Jerald A. Hallmark. Владелец: Motorola Inc. Дата публикации: 1999-02-23.

Trench mosfet with depleted gate shield and method of manufacture

Номер патента: US20190123194A1. Автор: Patrick M. Shea. Владелец: Renesas Electronics America Inc. Дата публикации: 2019-04-25.

Trench MOSFET with depleted gate shield and method of manufacture

Номер патента: US10825926B2. Автор: Patrick M. Shea. Владелец: Great Wall Semiconductor Corp. Дата публикации: 2020-11-03.

Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit

Номер патента: US09601215B2. Автор: Takuro Ohmaru. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-21.

Gate isolation features and methods of fabricating the same in semiconductor devices

Номер патента: US20240379673A1. Автор: Chia-Ta Yu,Yuan-Ching Peng,Jiun-Ming Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Method of manufacturing an optoelectronic semiconductor device, in particular a semiconductor diode laser

Номер патента: WO1996033537A3. Автор: Roijen Raymond Van,Petrus Johannes Adrianus Thijs,Gestel Patrick Henricus Van. Владелец: Philips Norden Ab. Дата публикации: 1996-12-27.

Information processing apparatus, authentication method, and recording medium for recording computer program

Номер патента: US20180241747A1. Автор: Jun Furukawa,Yuki Tanaka,Toshinori Araki,Kazuma OHARA. Владелец: NEC Corp. Дата публикации: 2018-08-23.

Information processing apparatus, method of controlling a lock screen displayed while the information processing apparatus is locked, and recording medium

Номер патента: US09898171B2. Автор: Hiroyasu Ito. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-02-20.

Image forming apparatus, color registration method of image forming apparatus, host apparatus, control method of host apparatus, and computer readable recording medium

Номер патента: US09389565B2. Автор: Ki-Youn Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-07-12.

Image processing apparatus, control method, and recording medium for processing an image signal for which a focus state can be changed after image capture

Номер патента: US09578235B2. Автор: Kazuhiro Namiki. Владелец: Canon Inc. Дата публикации: 2017-02-21.

Image display apparatus, method of driving image display apparatus, and computer readable recording medium

Номер патента: US09372655B2. Автор: Sun-Young Park,Wong-yong SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-06-21.

Image processing apparatus, method therefor and recording medium storing image processing program

Номер патента: AU6303499A. Автор: Hiroshi Inoue,Mitsuru Maeda. Владелец: Canon Inc. Дата публикации: 2000-06-08.

Image processing apparatus, method therefor and recording medium storing image processing program

Номер патента: AU764575B2. Автор: Hiroshi Inoue,Mitsuru Maeda. Владелец: Canon Inc. Дата публикации: 2003-08-21.

Image processing apparatus, method therefor and recording medium storing image processing program

Номер патента: EP1006727B1. Автор: Hiroshi Inoue,Mitsuru Maeda. Владелец: Canon Inc. Дата публикации: 2008-12-10.

Image processing apparatus, control method, and recording medium

Номер патента: US09723213B2. Автор: Koji Nishimori. Владелец: Canon Inc. Дата публикации: 2017-08-01.

Information processing system, position indicator, and method of controlling movement of display object on display screen of information processing apparatus

Номер патента: US20230221825A1. Автор: Naoto Onoda. Владелец: Wacom Co Ltd. Дата публикации: 2023-07-13.

Information processing system, position indicator, and method of controlling movement of display object on display screen of information processing apparatus

Номер патента: US20200301548A1. Автор: Naoto Onoda. Владелец: Wacom Co Ltd. Дата публикации: 2020-09-24.

Information processing system, position indicator, and method of controlling movement of display object on display screen of information processing apparatus

Номер патента: US20240168597A1. Автор: Naoto Onoda. Владелец: Wacom Co Ltd. Дата публикации: 2024-05-23.

Method for accepting QoS request, and apparatus and computer readable recording medium providing the same

Номер патента: US8156225B2. Автор: Akiko Yamada,Akira Imahase. Владелец: Fujitsu Ltd. Дата публикации: 2012-04-10.

Control method for information apparatus and computer-readable recording medium

Номер патента: US09766799B2. Автор: Takamitsu Sasaki,Kohei Tahara. Владелец: Panasonic Intellectual Property Corp of America. Дата публикации: 2017-09-19.

Control method for information apparatus and computer-readable recording medium

Номер патента: US09634852B2. Автор: Takamitsu Sasaki,Kohei Tahara,Tomoyuki Hirota. Владелец: Panasonic Intellectual Property Corp of America. Дата публикации: 2017-04-25.

Image processing system, portable terminal, image processing apparatus identifying method, and recording medium

Номер патента: US20160004485A1. Автор: Naoko Sasase. Владелец: KONICA MINOLTA INC. Дата публикации: 2016-01-07.

Method of controlling electronic apparatus and computer-readable recording medium

Номер патента: WO2020013413A1. Автор: Eunjoo CHO,Hyeonji Lee,Changseog KO. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-01-16.

Method of controlling electronic apparatus and computer-readable recording medium

Номер патента: US20200022072A1. Автор: Chang-Seog Ko,Eun-Joo Cho,Hyeon-Ji Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Information processing apparatus, control method, and recording medium

Номер патента: US09961224B2. Автор: Yohsuke Utoh. Владелец: Ricoh Co Ltd. Дата публикации: 2018-05-01.

Information processing system, information processing apparatus, and computer-readable recording medium having stored therein control program for information processing apparatus

Номер патента: US09843638B2. Автор: Hiroya NOZAKI. Владелец: Fujitsu Ltd. Дата публикации: 2017-12-12.

Image processing apparatus, control method, and recording medium

Номер патента: US09665939B2. Автор: Fumitaka Nakayama. Владелец: Canon Inc. Дата публикации: 2017-05-30.

Image processing apparatus, method for controlling image processing apparatus, electronic apparatus, and non-transitory recording medium

Номер патента: US20170163829A1. Автор: Takuroh FUJIOKA. Владелец: Ricoh Co Ltd. Дата публикации: 2017-06-08.

Information processing apparatus, control method, and recording medium

Номер патента: US20160241732A1. Автор: Yohsuke Utoh. Владелец: Ricoh Co Ltd. Дата публикации: 2016-08-18.

Information processing apparatus, communication system, and recording medium

Номер патента: US09955118B2. Автор: Tatsuya Nagase,Takahiro Asai. Владелец: Ricoh Co Ltd. Дата публикации: 2018-04-24.

Image processing apparatus, authentication method, and recording medium

Номер патента: US09900468B2. Автор: Tomoko Maruyama,Toshiya Shozaki,Jun SHIRAISHI,Shoko HABA,Ryosuke NISHIMURA. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-02-20.

Image processing apparatus, method for controlling image processing apparatus, electronic apparatus, and non-transitory recording medium

Номер патента: US09838556B2. Автор: Takuroh FUJIOKA. Владелец: Ricoh Co Ltd. Дата публикации: 2017-12-05.

Image processing apparatus, control method and recording medium, to control display of state or setting information

Номер патента: US09584687B2. Автор: Kazuki Yoshida,Genki Watanabe,Takashi Soyama,Yohsuke Utoh. Владелец: Ricoh Co Ltd. Дата публикации: 2017-02-28.

Device control system, information processing apparatus, and non-transitory recording medium

Номер патента: US09888541B2. Автор: Hideaki Iijima,Kiriko Chosokabe,Yushi MIYATA,Akira Murakata,Yuji Ohue,Akiyoshi Nakai,Kazunari Tonami. Владелец: Ricoh Co Ltd. Дата публикации: 2018-02-06.

Data share system, data process apparatus, and computer-readable recording medium

Номер патента: US09661042B2. Автор: Ryoichi Baba. Владелец: Ricoh Co Ltd. Дата публикации: 2017-05-23.

Data coding/decoding method and apparatus and coded data recording medium

Номер патента: AU702962B2. Автор: Makoto Kawamura. Владелец: Sony Corp. Дата публикации: 1999-03-11.

Memory device, method of forming the same, and semiconductor device having the same

Номер патента: US11737287B2. Автор: Yu-Chao Lin,Jung-Piao Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-22.

Image processing apparatus, method, program, and recording medium

Номер патента: US20080174683A1. Автор: Nobuyuki Sato,Hiroyuki Kiba. Владелец: Sony Corp. Дата публикации: 2008-07-24.

Signal processing apparatus, method, program, and recording medium

Номер патента: US20200334321A1. Автор: Atsufumi Shibayama. Владелец: NEC Corp. Дата публикации: 2020-10-22.

Method of af apparatus, method of nef apparatus, method of udm apparatus, method of amf apparatus, method of ue, method of pcf apparatus, method of ran node, af apparatus, nef apparatus, udm apparatus, amf apparatus, ue, pcf apparatus and ran node

Номер патента: US20240323828A1. Автор: TOSHIYUKI Tamura,Kundan Tiwari,Iskren Ianev. Владелец: NEC Corp. Дата публикации: 2024-09-26.

Image processing apparatus, control method, and recording medium

Номер патента: US09826163B2. Автор: Yoichi Kamei. Владелец: Canon Inc. Дата публикации: 2017-11-21.

Multi-display digital image processing apparatus using external display apparatus, method of operating the digital image processing apparatus, and computer readable recording medium having recorded thereon program for executing the method

Номер патента: US20130176191A1. Автор: Sung-Kyu Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-11.

Information processing apparatus, system, method, and recording medium for deriving amounts of metallic colorant and process colorants based on priority determined from a target color patch

Номер патента: US11936836B2. Автор: Yuki Matsushima,Yukiko Maeo. Владелец: Ricoh Co Ltd. Дата публикации: 2024-03-19.

Information processing apparatus, storage control apparatus, and computer-readable recording medium having stored program

Номер патента: US20150095922A1. Автор: Nobuyuki Shichino. Владелец: Fujitsu Ltd. Дата публикации: 2015-04-02.

Image processing apparatus and computer-readable recording medium storing program

Номер патента: US09973651B2. Автор: Mieko Mita. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-05-15.

Information processing apparatus, storage control apparatus, and computer-readable recording medium having stored program

Номер патента: US09547501B2. Автор: Nobuyuki Shichino. Владелец: Fujitsu Ltd. Дата публикации: 2017-01-17.

Information processing apparatus, method of controlling a lock screen displayed while the information processing apparatus is locked, and recording medium

Номер патента: US20150370438A1. Автор: Hiroyasu Ito. Владелец: KONICA MINOLTA INC. Дата публикации: 2015-12-24.

Information processing apparatus and non-transitory recording medium

Номер патента: US8593571B2. Автор: Teruyuki Sato. Владелец: Fujitsu Ltd. Дата публикации: 2013-11-26.

Method of analyzing lattice strain of semiconductor device

Номер патента: US10410332B2. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-10.

Method of analyzing lattice strain of semiconductor device

Номер патента: US20180012348A1. Автор: Gwang-Seon Byun,Myoung-Ki Ahn,Han-Saem Park,Hyun-koo KWAK,Su-Bong Shon,Ung-Keun Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-11.

Image processing apparatus and non-transitory recording medium storing image processing program

Номер патента: US20200242347A1. Автор: Eiichi Harada,Kiyoshi Mizukura. Владелец: Seiko Epson Corp. Дата публикации: 2020-07-30.

Method of and apparatus for recording and/or reproducing video information in/for a record carrier, and record carrier obtained by means of the method

Номер патента: CA1320266C. Автор: Werner A. L. Heijnemans. Владелец: Philips Gloeilampenfabrieken NV. Дата публикации: 1993-07-13.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US11864477B2. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-02.

Information processing apparatus, method, and non-transitory recording medium

Номер патента: US12075006B2. Автор: Naoya MATSUTA. Владелец: Ricoh Co Ltd. Дата публикации: 2024-08-27.

Image processing apparatus, image processing system, operation method of image processing apparatus, and computer-readable recording medium

Номер патента: US20190043196A1. Автор: Yoshiki Nakajima. Владелец: Olympus Corp. Дата публикации: 2019-02-07.

Sound processing apparatus, control method, and recording medium

Номер патента: US11682377B2. Автор: Kyohei Kitazawa. Владелец: Canon Inc. Дата публикации: 2023-06-20.

Information processing apparatus, communication system, and recording medium

Номер патента: US20170019637A1. Автор: Tatsuya Nagase,Takahiro Asai. Владелец: Ricoh Co Ltd. Дата публикации: 2017-01-19.

Information processing system, image forming apparatus, and non-transitory recording medium

Номер патента: US11825046B2. Автор: Takashi Kitamura. Владелец: Ricoh Co Ltd. Дата публикации: 2023-11-21.

Sound processing apparatus, control method, and recording medium

Номер патента: US20220310054A1. Автор: Kyohei Kitazawa. Владелец: Canon Inc. Дата публикации: 2022-09-29.

Method of designing ternary logic circuit using mosfets having depletion-mode and multi-vths, and device and recording medium for performing the same

Номер патента: US20240028806A1. Автор: Hyundong LEE,Taigon SONG. Владелец: Industry Academic Cooperation Foundation of KNU. Дата публикации: 2024-01-25.

Image processing apparatus, image processing method, program, recording medium, printing system, image forming apparatus

Номер патента: EP2321957A1. Автор: Takashi Kimura,Masanori Hirano,Takayuki Ito,Naoki Nakano,Yoshiaki Hoshino,Masakazu Yoshida,Shinichi Hatanaka,Yoshihisa Ohta. Владелец: Ricoh Co Ltd. Дата публикации: 2011-05-18.

Information processing apparatus, control method, and recording medium

Номер патента: US10250719B2. Автор: Hisashi Kato. Владелец: Canon Inc. Дата публикации: 2019-04-02.

Information processing apparatus, display method, and recording medium

Номер патента: US20230056951A1. Автор: Shimpei NAKAGAWA. Владелец: Ricoh Co Ltd. Дата публикации: 2023-02-23.

Information processing apparatus, control method, and recording medium

Номер патента: US11194907B2. Автор: Satoshi Mori. Владелец: Ricoh Co Ltd. Дата публикации: 2021-12-07.

Information processing apparatus, control method, and recording medium

Номер патента: US20200242242A1. Автор: Satoshi Mori. Владелец: Ricoh Co Ltd. Дата публикации: 2020-07-30.

Method of setting parameters used to adjust quality of scanned image, information processing apparatus employing such a method, and non-transitory computer-readable recording medium therefor

Номер патента: US11503165B2. Автор: Nobuyuki Kamiya. Владелец: Brother Industries Ltd. Дата публикации: 2022-11-15.

Information processing apparatus, non-transitory computer readable recording medium that records a dashboard application program, and image forming apparatus management system

Номер патента: US20200409514A1. Автор: Masayoshi Nakamura,Yuzuru Naganuma. Владелец: Kyocera Document Solutions Inc. Дата публикации: 2020-12-31.

Information processing apparatus, moving body, computer-readable recording medium and method

Номер патента: US11993268B2. Автор: Takashi Yamada,Satoshi Onodera,Toshiaki Takano,Kazunori Tokunaga,Mafuyu Koseki. Владелец: Honda Motor Co Ltd. Дата публикации: 2024-05-28.

Proof information processing apparatus, proof information processing method, recording medium, and electronic proofreading system

Номер патента: US20120263345A1. Автор: Akira Watanabe. Владелец: Fujifilm Corp. Дата публикации: 2012-10-18.

Color correction apparatus, image forming apparatus, method of controlling color correction apparatus, and non-transitory recording medium storing computer readable program

Номер патента: US11968346B2. Автор: Daiki Yamanaka,Hiroshige KIDERA. Владелец: KONICA MINOLTA INC. Дата публикации: 2024-04-23.

Image forming apparatus, method of controlling image forming apparatus, and non-transitory recording medium storing computer-readable program

Номер патента: US20230308595A1. Автор: Toru Yamaguchi,Daiki Yamanaka. Владелец: KONICA MINOLTA INC. Дата публикации: 2023-09-28.

Color correction apparatus, image forming apparatus, method of controlling color correction apparatus, and non-transitory recording medium storing computer readable program

Номер патента: US20230336677A1. Автор: Daiki Yamanaka,Hiroshige KIDERA. Владелец: KONICA MINOLTA INC. Дата публикации: 2023-10-19.

Image display apparatus, method of driving image display apparatus, and computer readable recording medium

Номер патента: US20150195476A1. Автор: Sun-Young Park,Wong-yong SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-07-09.

Information processing apparatus, information processing method, program, recording medium, and information processing system

Номер патента: US09538021B2. Автор: Tomohisa Takaoka. Владелец: Sony Corp. Дата публикации: 2017-01-03.

Information processing method, information processing apparatus, and non-transitory recording medium storing instructions for executing an information processing method

Номер патента: US20190222703A1. Автор: FEI Yang. Владелец: Ricoh Co Ltd. Дата публикации: 2019-07-18.

Information processing method, information processing apparatus, and non-transitory recording medium storing instructions for executing an information processing method

Номер патента: US20200112645A1. Автор: FEI Yang. Владелец: Ricoh Co Ltd. Дата публикации: 2020-04-09.

Information processing method, information processing apparatus, and non-transitory recording medium storing instructions for executing an information processing method

Номер патента: US10798258B2. Автор: FEI Yang. Владелец: Ricoh Co Ltd. Дата публикации: 2020-10-06.

Data share system, data process apparatus, and computer-readable recording medium

Номер патента: US8972500B2. Автор: Ryoichi Baba. Владелец: Ricoh Co Ltd. Дата публикации: 2015-03-03.

Electronic apparatus, method for controlling an electronic apparatus, and non-transitory recording medium

Номер патента: US20210400530A1. Автор: Satoshi Takano. Владелец: Ricoh Co Ltd. Дата публикации: 2021-12-23.

Management system, image processing apparatus, non-transitory computer-readable recording medium encoded with protocol sharing program, and protocol sharing method

Номер патента: US20160026413A1. Автор: Hisashi Uchida,Masami Yamada,Yasutaka Ito,Kazumi Sawayanagi,Akihiro TORIGOSHI,Kazuya Anezaki. Владелец: KONICA MINOLTA INC. Дата публикации: 2016-01-28.

Management system, image processing apparatus, non-transitory computer-readable recording medium encoded with protocol sharing program, and protocol sharing method

Номер патента: US9606757B2. Автор: Hisashi Uchida,Masami Yamada,Yasutaka Ito,Kazumi Sawayanagi,Akihiro TORIGOSHI,Kazuya Anezaki. Владелец: KONICA MINOLTA INC. Дата публикации: 2017-03-28.

Electronic apparatus, method for controlling an electronic apparatus, and non-transitory recording medium

Номер патента: US11924684B2. Автор: Satoshi Takano. Владелец: Ricoh Co Ltd. Дата публикации: 2024-03-05.

Image forming system, system control method, image forming apparatus, and computer-readable recording medium

Номер патента: US20090237722A1. Автор: Masatoshi Kubokura. Владелец: Ricoh Co Ltd. Дата публикации: 2009-09-24.

Manipulating system consisting of wirelessly connected manipulating apparatus and electronic apparatus, power consumption control method, manipulating apparatus, electronic apparatus and computer readable recording medium having program thereof

Номер патента: US09591216B2. Автор: Kenji Yoshizawa. Владелец: Casio Computer Co Ltd. Дата публикации: 2017-03-07.

Method, apparatus and computer-readable recording medium for obtaining information

Номер патента: EP1968007A3. Автор: Kenichiro Sakai,Tsugio Noda. Владелец: Fujitsu Ltd. Дата публикации: 2013-01-02.

Method of manufacturing piezoelectric vibrating reed, piezoelectric vibrating reed, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece

Номер патента: US8445185B2. Автор: Masayuki Kawaguchi. Владелец: Seiko Instruments Inc. Дата публикации: 2013-05-21.

Information processing apparatus, method, and non-transitory recording medium storing instructions for executing an information processing method

Номер патента: US20200004485A1. Автор: Youichi MINEGISHI. Владелец: Ricoh Co Ltd. Дата публикации: 2020-01-02.

Information processing system, position indicator, and method of controlling movement of display object on display screen of information processing apparatus

Номер патента: US11921965B2. Автор: Naoto Onoda. Владелец: Wacom Co Ltd. Дата публикации: 2024-03-05.

Information processing apparatus, method, and non-transitory recording medium

Номер патента: US20230300259A1. Автор: Naoya MATSUTA. Владелец: Ricoh Co Ltd. Дата публикации: 2023-09-21.

Control method for information apparatus and computer-readable recording medium

Номер патента: US20170322699A1. Автор: Takamitsu Sasaki,Kohei Tahara. Владелец: Panasonic Intellectual Property Corp of America. Дата публикации: 2017-11-09.

Information processing method, information processing apparatus, and non-transitory recording medium

Номер патента: US20210364299A1. Автор: Hiroshi Kawakami,Ayaka Kagami,Natsuki Sugiyama,Yosuke Tokuda,Taichi Amakasu,Takuzo HIRANO,Seiei HIBINO,Hirotaka Todaka,Yoshiyasu Takezawa,Takao Kiguchi,Chieko Sawada. Владелец: Toyota Motor Corp. Дата публикации: 2021-11-25.

Information processing apparatus and computer readable recording medium having program stored thereon in non-transitory manner

Номер патента: US20190272130A1. Автор: Kenichi Takahashi,Masaya Hashimoto,Keisuke Sato,Kaitaku Ozawa,Akihiro TORIGOSHI,Tomonari Yoshimura. Владелец: KONICA MINOLTA INC. Дата публикации: 2019-09-05.

Apparatus for capturing images, method of controlling exposure in the apparatus, and computer readable recording medium storing program

Номер патента: US20090226160A1. Автор: Soon-geun Jang,Eun-sun Ahn,Jin-pyo Gwak. Владелец: Samsung Techwin Co Ltd. Дата публикации: 2009-09-10.

Information recording apparatus and method, information reproducing apparatus and method, information recording medium, program storage medium, and program

Номер патента: CA2406482A1. Автор: Masanobu Nakamura,Motoki Kato. Владелец: Individual. Дата публикации: 2002-10-16.

Image processing apparatus, and non-transitory recording medium storing computer readable program

Номер патента: US20180220035A1. Автор: Bounta CHITPASONG. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-08-02.

Image Processing Method of Processing Images from a Plurality of Cameras in Ship Cleaning Robot Into Single Image, Computer Readable Recording Medium, Computer Program, and Robot Control Method Using the Same

Номер патента: US20240169485A1. Автор: Dong Wook Lee. Владелец: Tas Global Co Ltd. Дата публикации: 2024-05-23.

Printing control method, printing control apparatus, and computer-readable recording medium

Номер патента: US9400947B2. Автор: Hirofumi Narita. Владелец: Canon Inc. Дата публикации: 2016-07-26.

Information processing apparatus, non-transitory computer readable recording medium that records printer driver program, and blank page handling method

Номер патента: US10168969B2. Автор: Hershe Alberto. Владелец: Kyocera Document Solutions Inc. Дата публикации: 2019-01-01.

Information processing apparatus, non-transitory computer readable recording medium, and information processing method

Номер патента: US20170353626A1. Автор: Hiroshi Nakamura. Владелец: Kyocera Document Solutions Inc. Дата публикации: 2017-12-07.

Information processing apparatus, information processing method, program, recording medium, and information processing system

Номер патента: US20170093763A1. Автор: Tomohisa Takaoka. Владелец: Sony Corp. Дата публикации: 2017-03-30.

Information processing apparatus, mobile object, computer-readable recording medium, and information processing method

Номер патента: US20220199077A1. Автор: Takahiro Otsuka,Shohei Tsukahara,Kosei Tsushima,Yuto Kojima. Владелец: Honda Motor Co Ltd. Дата публикации: 2022-06-23.

Color compensation apparatus and method, image forming apparatus, and computer readable recording medium

Номер патента: US20100182619A1. Автор: Kyeong-Man Kim,Hyun-Soo Oh,Se-eun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-07-22.

Online signing system and method, computing apparatus, and computer-readable recording medium

Номер патента: US20230138504A1. Автор: Kai-Yi Wu,Po-Chou Su,Hsuan Tu,Nan-Kuang Lee,Jia-Rou Lee,Weichih Sun,Ying-Hsiu Chen. Владелец: Kdan Mobile Software Ltd. Дата публикации: 2023-05-04.

Converter, Media Detecting System, Image Forming Apparatus, And Computer-Readable Recording Medium Storing Control Program

Номер патента: US20220182502A1. Автор: Hiroyuki Maruyama. Владелец: KONICA MINOLTA INC. Дата публикации: 2022-06-09.

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

Номер патента: US20060113526A1. Автор: Hiroki Maeda,Junichi Hanna,Hiroaki Iino. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2006-06-01.

Memory cell, method of forming the same, and semiconductor device having the same

Номер патента: US20240090354A1. Автор: Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Method of measuring trench depth of semiconductor device

Номер патента: US6500683B1. Автор: Masakazu Nakabayashi,Tadayuki Yoshiyama. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-12-31.

Method of fabrication of an amorphous semiconductor device on a substrate

Номер патента: US4167806A. Автор: Pierre Kumurdjian. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 1979-09-18.

Stereo camera apparatus, vehicle provided with stereo camera apparatus, and non-transitory recording medium

Номер патента: US10180318B2. Автор: Kazumasa AKIMOTO. Владелец: Kyocera Corp. Дата публикации: 2019-01-15.

Methods of correcting data errors and semiconductor devices used therein

Номер патента: US20170371746A1. Автор: Chang Hyun Kim. Владелец: SK hynix Inc. Дата публикации: 2017-12-28.

Charging control system, charging control apparatus, and computer readable recording medium

Номер патента: US20220164721A1. Автор: Masaaki Sato,Daiki Yokoyama,Shota Tsukamoto,Daiki Kawachino,Rie YAYABE. Владелец: Toyota Motor Corp. Дата публикации: 2022-05-26.

Manipulating system consisting of wirelessly connected manipulating apparatus and electronic apparatus, power consumption control method, manipulating apparatus, electronic apparatus and computer readable recording medium having program thereof

Номер патента: US20150103235A1. Автор: Kenji Yoshizawa. Владелец: Casio Computer Co Ltd. Дата публикации: 2015-04-16.

Application distribution device distributes a program for installing an application in an image forming apparatus and non-transitory recording medium

Номер патента: US11936828B1. Автор: Hideaki Suzuki,Hiroshi Watanabe,Tomoki Maeda,Jin Kamada,Sho SAKUMA. Владелец: Toshiba TEC Corp. Дата публикации: 2024-03-19.

Manipulating system consisting of wirelessly connected manipulating apparatus and electronic apparatus, power consumption control method, manipulating apparatus, electronic apparatus and computer readable recording medium having program thereof

Номер патента: US9325900B2. Автор: Kenji Yoshizawa. Владелец: Casio Computer Co Ltd. Дата публикации: 2016-04-26.

Manipulating system consisting of wirelessly connected manipulating apparatus and electronic apparatus, power consumption control method, manipulating apparatus, electronic apparatus and computer readable recording medium having program thereof

Номер патента: US20160205322A1. Автор: Kenji Yoshizawa. Владелец: Casio Computer Co Ltd. Дата публикации: 2016-07-14.

Image processing apparatus and method of controlling the same

Номер патента: US20140363136A1. Автор: Tomokazu Mori. Владелец: Canon Inc. Дата публикации: 2014-12-11.

Image processing apparatus and method of controlling the same

Номер патента: US8848067B2. Автор: Tomokazu Mori. Владелец: Canon Inc. Дата публикации: 2014-09-30.

Image processing apparatus and method of controlling the same

Номер патента: US09443554B2. Автор: Tomokazu Mori. Владелец: Canon Inc. Дата публикации: 2016-09-13.

System, server apparatus, terminal apparatus, and recording medium for generating a user affinity-based address book, and method for generating a user affinity-based address book

Номер патента: US09774567B2. Автор: Eun Bok Lee,In Seong Hwang,Kiwon Kwak. Владелец: SK Planet Co Ltd. Дата публикации: 2017-09-26.

Communications system and method, information processing apparatus and method, information management apparatus and method, recording medium and program

Номер патента: US09451327B2. Автор: Makoto Sato,Kazuyuki Ogawa,Yuji Takimoto,Kayo Sugimoto. Владелец: Sony Corp. Дата публикации: 2016-09-20.

Information processing system, service providing apparatus and method, information processing apparatus and method, recording medium, and program

Номер патента: US09684796B2. Автор: Kenichi Takemura,Yoshihiro Wakita. Владелец: Sony Corp. Дата публикации: 2017-06-20.

Recording apparatus, method of controlling recording apparatus, and computer-readable recording medium

Номер патента: US20090010611A1. Автор: Yumiko Nakamura. Владелец: Fujitsu Ltd. Дата публикации: 2009-01-08.

Method of managing policy for reducing network load in overloaded area, system and recording medium thereof

Номер патента: US20150138964A1. Автор: Yang Meong Cha. Владелец: IDEAWARE Inc. Дата публикации: 2015-05-21.

Image forming apparatus, color registration method of image forming apparatus, host apparatus, control method of host apparatus, and computer readable recording medium

Номер патента: EP2739031B1. Автор: Ki-Youn Lee. Владелец: HP Printing Korea Co Ltd. Дата публикации: 2019-01-23.

Image processing apparatus, control method, and recording medium

Номер патента: US20170078528A1. Автор: Ryo Kosaka. Владелец: Canon Inc. Дата публикации: 2017-03-16.

Semiconductor device, and programming method and programming system therefor

Номер патента: US8106681B2. Автор: Tadashi Fujita. Владелец: Renesas Electronics Corp. Дата публикации: 2012-01-31.

Imaging system, image processing apparatus, imaging device, and recording medium

Номер патента: EP3991132B1. Автор: Kazuhiro Matsumoto,Ryoh Fukui,Daisuke Hohjoh. Владелец: Ricoh Co Ltd. Дата публикации: 2024-07-31.

Image processing apparatus and method of controlling the same

Номер патента: US20110261215A1. Автор: Miyako Minobe. Владелец: Canon Inc. Дата публикации: 2011-10-27.

INFORMATION PROCESSING APPARATUS, METHOD OF CONTROLLING A LOCK SCREEN DISPLAYED WHILE THE INFORMATION PROCESSING APPARATUS IS LOCKED, AND RECORDING MEDIUM

Номер патента: US20150370438A1. Автор: ITO Hiroyasu. Владелец: KONICA MINOLTA, INC.. Дата публикации: 2015-12-24.

Information processing apparatus, information processing apparatus control method, information processing apparatus control program, and recording medium recording information processing apparatus control program

Номер патента: JP3940902B2. Автор: 章 西村. Владелец: Sony Corp. Дата публикации: 2007-07-04.

Image reading apparatus and image forming system

Номер патента: US20210306504A1. Автор: Hiroki Takayama,Masashi Sawada. Владелец: Canon Inc. Дата публикации: 2021-09-30.

Determination method, information processing apparatus, and computer-readable recording medium storing determination program

Номер патента: US20230208966A1. Автор: Jun Takahashi,Toshiyuki Yoshitake,Masayoshi Shimizu,Kentaro Tsuji,Mingxie ZHENG. Владелец: Fujitsu Ltd. Дата публикации: 2023-06-29.

Information processing system, information processing method, information processing apparatus, and non-transitory recording medium for managing a job using an image code

Номер патента: US12073135B2. Автор: Makoto Aoki,Hajime Kawasaki. Владелец: Ricoh Co Ltd. Дата публикации: 2024-08-27.

SUBSTRATE CARTRIDGE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, CONTROL APPARATUS, AND METHOD OF MANUFACTURING DISPLAY ELEMENT

Номер патента: US20140290041A1. Автор: KIUCHI Tohru. Владелец: . Дата публикации: 2014-10-02.

Method of spatio-temporally integrating/managing a plurality of videos and system for embodying the same, and recording medium for recording a program for the method

Номер патента: US6411339B1. Автор: Hiroshi Hamada,Yoshinobu Tonomura,Akihito Akutsu. Владелец: Nippon Telegraph and Telephone Corp. Дата публикации: 2002-06-25.

Information processing system, information processing apparatus, computer-readable non-transitory recording medium storing information processing program, and slave system

Номер патента: US20210099606A1. Автор: Takehiko Asano,Masato Hirota. Владелец: Kyocera Document Solutions Inc. Дата публикации: 2021-04-01.

INFORMATION PROCESSING APPARATUS, AUTHENTICATION METHOD, AND RECORDING MEDIUM FOR RECORDING COMPUTER PROGRAM

Номер патента: US20180241747A1. Автор: Furukawa Jun,Araki Toshinori,Tanaka Yuki,OHARA Kazuma. Владелец: NEC Corporation. Дата публикации: 2018-08-23.

Information processing apparatus, information processing apparatus control method, and recording medium storing information processing apparatus control program

Номер патента: JP5565142B2. Автор: 真敏 木村. Владелец: Fujitsu Ltd. Дата публикации: 2014-08-06.

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING APPARATUS CONTROLLING METHOD, AND RECORDING MEDIUM

Номер патента: US20200137254A1. Автор: IMAIZUMI Yuki. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2020-04-30.

Image processing apparatus and method of controlling the same

Номер патента: US20110261216A1. Автор: Tomokazu Mori. Владелец: Canon Inc. Дата публикации: 2011-10-27.

Rod lens array unit, production method of rod lens array unit, LED print head, image sensor head, image forming apparatus, and image reader

Номер патента: US09810816B2. Автор: Takahito Suzuki. Владелец: Oki Data Corp. Дата публикации: 2017-11-07.

Relay apparatus and computer-readable recording medium

Номер патента: US09479245B2. Автор: Tadashi Suzuki,Masayuki Kamimura,Yosuke MITSUYA. Владелец: SoftBank Corp. Дата публикации: 2016-10-25.

Information recording apparatus and method, information reproduction apparatus and method, information recording medium, program storage medium and program

Номер патента: TW200302461A. Автор: Motoki Kato. Владелец: Sony Corp. Дата публикации: 2003-08-01.

IMAGE PROCESSING APPARATUS, METHOD OF CONTROLLING IMAGE PROCESSING APPARATUS, AND NON-TRANSITORY RECORDING MEDIUM

Номер патента: US20130235408A1. Автор: YAMAGUCHI Tomohiro. Владелец: Konica Minolta Business Technologies, Inc.. Дата публикации: 2013-09-12.

IMAGE PROCESSING SYSTEM, PORTABLE TERMINAL, IMAGE PROCESSING APPARATUS IDENTIFYING METHOD, AND RECORDING MEDIUM

Номер патента: US20160004485A1. Автор: SASASE Naoko. Владелец: KONICA MINOLTA, INC.. Дата публикации: 2016-01-07.

INFORMATION PROCESSING APPARATUS, COMMUNICATION SYSTEM, AND RECORDING MEDIUM

Номер патента: US20170019637A1. Автор: ASAI Takahiro,NAGASE Tatsuya. Владелец: . Дата публикации: 2017-01-19.

IMAGE PROCESSING APPARATUS, AUTHENTICATION METHOD, AND RECORDING MEDIUM

Номер патента: US20170054875A1. Автор: Haba Shoko,Nishimura Ryosuke,MARUYAMA Tomoko,SHIRAISHI Jun,SHOZAKI Toshiya. Владелец: KONICA MINOLTA, INC.. Дата публикации: 2017-02-23.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD AND RECORDING MEDIUM

Номер патента: US20190056894A1. Автор: Hasegawa Shin. Владелец: . Дата публикации: 2019-02-21.

Video Processing Apparatus, Control Method, and Recording Medium

Номер патента: US20170064192A1. Автор: Shigeki Mori. Владелец: Canon Inc. Дата публикации: 2017-03-02.

IMAGE PROCESSING APPARATUS, CONTROLLING METHOD, AND RECORDING MEDIUM STORING CONTROLLING PROGRAM

Номер патента: US20170078498A1. Автор: HIROKAWA Tatsuma. Владелец: . Дата публикации: 2017-03-16.

IMAGE PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20170078528A1. Автор: Kosaka Ryo. Владелец: . Дата публикации: 2017-03-16.

SERVER, INFORMATION PROCESSING APPARATUS, SYSTEM, METHOD, AND RECORDING MEDIUM

Номер патента: US20150095422A1. Автор: Kasai Keiichi,Kai Keisuke. Владелец: PFU LIMITED. Дата публикации: 2015-04-02.

PROCESSING APPARATUS, PROCESSING METHOD, AND RECORDING MEDIUM FOR STORING PROCESS PROGRAM

Номер патента: US20190089863A1. Автор: KOBAYASHI Masayuki,YAMADA Norihiko,ATO Takayuki. Владелец: . Дата публикации: 2019-03-21.

NETWORK DEVICE, INFORMATION PROCESSING APPARATUS, AUTHENTICATION METHOD, AND RECORDING MEDIUM

Номер патента: US20190097993A1. Автор: IWASHITA Shinya. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2019-03-28.

IMAGE PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20150109483A1. Автор: Namiki Kazuhiro. Владелец: . Дата публикации: 2015-04-23.

Image processing apparatus, control method, and recording medium

Номер патента: US20190102053A1. Автор: Tomoya Ishida. Владелец: Canon Inc. Дата публикации: 2019-04-04.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM FOR UPDATING THE TRANSMISSION RESULT OF A MULTI-ADDRESS TRANSMISSION

Номер патента: US20150138598A1. Автор: Yamamichi Masaki. Владелец: . Дата публикации: 2015-05-21.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20210176341A1. Автор: KATO Hisashi. Владелец: . Дата публикации: 2021-06-10.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20190182354A1. Автор: KATO Hisashi. Владелец: . Дата публикации: 2019-06-13.

Information processing apparatus, control method, and recording medium storing a control program

Номер патента: US20150199000A1. Автор: Hisanori Kawaura. Владелец: Ricoh Co Ltd. Дата публикации: 2015-07-16.

TRANSMISSION SYSTEM, INFORMATION PROCESSING APPARATUS, TRANSMISSION METHOD AND RECORDING MEDIUM

Номер патента: US20160205345A1. Автор: ASAI Takahiro,HOMMA Takeshi. Владелец: . Дата публикации: 2016-07-14.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM STORING PROGRAM

Номер патента: US20210232541A1. Автор: Konishi Yohsuke. Владелец: . Дата публикации: 2021-07-29.

Information processing apparatus, installation method, and recording medium

Номер патента: US20180227445A1. Автор: Youichi MINEGISHI. Владелец: Ricoh Co Ltd. Дата публикации: 2018-08-09.

IMAGE PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20150244941A1. Автор: Nishimori Koji. Владелец: . Дата публикации: 2015-08-27.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20160241732A1. Автор: UTOH Yohsuke. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2016-08-18.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20170251080A1. Автор: KATO Hisashi. Владелец: . Дата публикации: 2017-08-31.

IMAGE PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20140347517A1. Автор: Kamei Yoichi. Владелец: . Дата публикации: 2014-11-27.

Information processing apparatus and non-transitory recording medium storing computer readable control program

Номер патента: US20240241470A1. Автор: Masahiro Kamiya,Takahiro Tsujimoto,Takeshi Tamada. Владелец: KONICA MINOLTA INC. Дата публикации: 2024-07-18.

Method of designing and manufacturing semiconductor device

Номер патента: US20080256496A1. Автор: Hiroshi Watanabe,Toshitake Yaegashi,Shigeyuki Takagi,Shigeru Kinoshita. Владелец: Toshiba Corp. Дата публикации: 2008-10-16.

Storage apparatus, method of controlling storage apparatus, and computer-readable recording medium having stored therein storage apparatus control program

Номер патента: US09582200B2. Автор: Joichi Bita. Владелец: Fujitsu Ltd. Дата публикации: 2017-02-28.

Method of determining operating drive voltage of an in-jet head, ink-jet recording apparatus and superposed-pattern-recorded article

Номер патента: US20060187256A1. Автор: Masaharu Ito. Владелец: Brother Industries Ltd. Дата публикации: 2006-08-24.

Method of recording and/or reproducing temporary defect list, recording and/or reproducing apparatus, and write-once recording medium

Номер патента: CA2505787C. Автор: Jung-Wan Ko,Sung-hee Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-10-11.

Information processing apparatus, control method, and recording medium

Номер патента: US09864736B2. Автор: Makoto Mihara. Владелец: Canon Inc. Дата публикации: 2018-01-09.

Method of detecting an integrated circuit in failure among integrated circuits, apparatus of doing the same, and recording medium storing program for doing the same

Номер патента: US20030093237A1. Автор: Kazuhiro Sakaguchi. Владелец: NEC Corp. Дата публикации: 2003-05-15.

Information processing apparatus, clustering method, and recording medium storing clustering program

Номер патента: US09519660B2. Автор: Satoshi Nakamura. Владелец: Ricoh Co Ltd. Дата публикации: 2016-12-13.

Rotation angle calculating method of wire harness, rotation angle calculating apparatus, and computer-readable recording medium

Номер патента: US7395179B2. Автор: Masayoshi Sawai. Владелец: Yazaki Corp. Дата публикации: 2008-07-01.

Rotation angle calculating method of wire harness, rotation angle calculating apparatus, and computer-readable recording medium

Номер патента: US20060241896A1. Автор: Masayoshi Sawai. Владелец: Yazaki Corp. Дата публикации: 2006-10-26.

Apparatus and method of exposing light to a semiconductor device having a curved surface

Номер патента: WO2004063813A1. Автор: Nobuo Takeda,Ikuo Nishimoto,Ichitaroh Satoh. Владелец: YAMATAKE CORPORATION. Дата публикации: 2004-07-29.

Electronic apparatus, control method of electronic apparatus and computer readable recording medium

Номер патента: US09987926B2. Автор: Ho Hyung CHO,Min Kyu Cha. Владелец: Thinkware Corp. Дата публикации: 2018-06-05.

Electronic apparatus, control method of electronic apparatus and computer readable recording medium

Номер патента: US09676275B2. Автор: Ho Hyung CHO,Min Kyu Cha. Владелец: Thinkware Corp. Дата публикации: 2017-06-13.

Information processing apparatus, control method, and recording medium

Номер патента: US09377875B2. Автор: Kensuke Inagaki,Ryota Shoji. Владелец: Canon Inc. Дата публикации: 2016-06-28.

Method of navigation of an unmanned apparatus in the presence of a foreign flying apparatus and the unmanned apparatus for the implementation of the method

Номер патента: RU2661242C2. Автор: Жульен ФАРЖОН. Владелец: Сафран Электроникс Энд Дифенс. Дата публикации: 2018-07-13.

Information processing apparatus, interaction method, and recording medium

Номер патента: US20180004300A1. Автор: Taichi Murase. Владелец: Fujitsu Ltd. Дата публикации: 2018-01-04.

Image processing apparatus and computer-readable recording medium storing screen transfer program

Номер патента: US20220067873A1. Автор: Kohji Yamada. Владелец: Fujitsu Ltd. Дата публикации: 2022-03-03.

Information processing apparatus, operation method, and recording medium

Номер патента: US20240289547A1. Автор: Kosaku YOSHIOKA. Владелец: Casio Computer Co Ltd. Дата публикации: 2024-08-29.

Information processing apparatus, control method, and recording medium

Номер патента: US09766839B2. Автор: Hiroaki Nakata. Владелец: Canon Inc. Дата публикации: 2017-09-19.

Method of generating specific information on semiconductor device, method of managing specific information on semiconductor device, and manufacturing apparatus for semiconductor device

Номер патента: US20240289570A1. Автор: Hiroshi Miyoshi,Noriyuki Yabuoshi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-08-29.

Parallel processing apparatus and computer-readable recording medium storing parallel processing program

Номер патента: US20230176864A1. Автор: Masafumi Yamazaki. Владелец: Fujitsu Ltd. Дата публикации: 2023-06-08.

Method of determining whether or not result of processing process of laser processing apparatus is acceptable

Номер патента: US20210060697A1. Автор: Hiroki Takeuchi,Masanobu Takenaka,Yukito Akutagawa. Владелец: Disco Corp. Дата публикации: 2021-03-04.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US09711205B2. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-07-18.

High voltage power supply without output voltage adjustment, method of adjusting output voltage of the high voltage power supply in image forming apparatus, and image forming apparatus using the method

Номер патента: US20140178082A1. Автор: Yun-Tae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-06-26.

Multilayer information recording medium manufacturing method, multilayer information recording medium manufacturing apparatus, and multilayer information recording medium

Номер патента: US20110069603A1. Автор: Yuuko Tomekawa,Morio Tomiyama. Владелец: Panasonic Corp. Дата публикации: 2011-03-24.

Dynamic image processing apparatus and computer-readable recording medium for providing diagnosis support

Номер патента: US09704242B2. Автор: Koichi Fujiwara,Osamu Toyama,Hiroshi Yamato,Kenta Shimamura. Владелец: KONICA MINOLTA INC. Дата публикации: 2017-07-11.

Method of correction of odometry errors during the autonomous drive of a wheel-equipped apparatus and control unit thereof

Номер патента: EP4374137A1. Автор: Andrea Bertaia. Владелец: Alba Robot SRL. Дата публикации: 2024-05-29.

Display control method, information processing apparatus, and computer-readable recording medium

Номер патента: US20160292364A1. Автор: Takahiro Inoue. Владелец: Fujitsu Ltd. Дата публикации: 2016-10-06.

Method of Correction of Odometry Errors During the Autonomous Drive of a Wheel-Equipped Apparatus and Control Unit Thereof

Номер патента: US20240328823A1. Автор: Andrea Bertaia. Владелец: Alba Robot SRL. Дата публикации: 2024-10-03.

Computing device executing program performing method of analyzing power noise in semiconductor device, semiconductor device design method, and program storage medium storing program

Номер патента: US09958495B2. Автор: Young Hoe Cheon,Chan Seok Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-01.

System for and method of designing and manufacturing a semiconductor device

Номер патента: US20020045280A1. Автор: Keith Strickland,Arshad Madni,Lance Trodd,Chris Powell. Владелец: Zarlink Semiconductor Ltd. Дата публикации: 2002-04-18.

Pattern correcting method of mask for manufacturing a semiconductor device

Номер патента: US20080212869A1. Автор: Koji Hashimoto,Satoshi Usui,Kei Yoshikawa. Владелец: Toshiba Corp. Дата публикации: 2008-09-04.

Information processing apparatus, method, and non-transitory recording medium

Номер патента: US20210109838A1. Автор: Genki Watanabe. Владелец: Ricoh Co Ltd. Дата публикации: 2021-04-15.

Information processing apparatus, method, and non-transitory recording medium storing instructions for executing an information processing method

Номер патента: US20190303124A1. Автор: Hideki Ohhashi. Владелец: Ricoh Co Ltd. Дата публикации: 2019-10-03.

Method of accessing word line in semiconductor device

Номер патента: US20050232064A1. Автор: Yin Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2005-10-20.

Methods, apparatus, and articles of manufacture to encode auxiliary data into relational database keys and methods, apparatus, and articles of manufacture to obtain encoded data from relational database keys

Номер патента: US09990478B2. Автор: Leonid Ayzenshtat,Nikolay Georgiev,Kalyanaraman Rajamani. Владелец: Nielsen Co US LLC. Дата публикации: 2018-06-05.

Method for separately executing software, apparatus, and computer-readable recording medium

Номер патента: US09454456B2. Автор: SUNG Kim,Minseok Kim,Oin Kwon,Giseon Nam. Владелец: SK Planet Co Ltd. Дата публикации: 2016-09-27.

Image processing apparatus, operating method of image processing apparatus, and computer-readable recording medium

Номер патента: US20200054400A1. Автор: Takashi Kono,Yamato Kanda,Takehito Hayami. Владелец: Olympus Corp. Дата публикации: 2020-02-20.

Information processing apparatus, printing method, and recording medium

Номер патента: US20200097229A1. Автор: Aoi NAKAMURA. Владелец: Ricoh Co Ltd. Дата публикации: 2020-03-26.

Information processing apparatus, updating method, and recording medium

Номер патента: US20180267793A1. Автор: Genki Watanabe. Владелец: Ricoh Co Ltd. Дата публикации: 2018-09-20.

Information processing apparatus, control method, and recording medium

Номер патента: US20140139529A1. Автор: Tomohiko Mukai. Владелец: Square Enix Co Ltd. Дата публикации: 2014-05-22.

Method of detecting an integrated circuit in failure among integrated circuits, apparatus of doing the same, and recording medium storing program for doing the same

Номер патента: US20030182073A1. Автор: Kazuhiro Sakaguchi. Владелец: NEC Corp. Дата публикации: 2003-09-25.

Method and system for selling by using product catalogue having unit-sell pattern, apparatus and computer-readable recording medium with program therefor

Номер патента: WO2008114949A1. Автор: Jaehyun Park,Seunggol Lee,Daehun Nyang,Jeonil Kang. Владелец: Easy System Inc.. Дата публикации: 2008-09-25.

Observation information processing apparatus, non-transitory computer-readable recording medium, and observation information processing method

Номер патента: US9519697B2. Автор: Tatsuya Asai,Hiroaki Morikawa,Nobuhiro Yugami,Seishi Okamoto,Shinichiro Tago,Hiroya Inakoshi. Владелец: Fujitsu Ltd. Дата публикации: 2016-12-13.

Observation information processing apparatus, non-transitory computer-readable recording medium, and observation information processing method

Номер патента: US20140210820A1. Автор: Tatsuya Asai,Hiroaki Morikawa,Nobuhiro Yugami,Seishi Okamoto,Shinichiro Tago,Hiroya Inakoshi. Владелец: Fujitsu Ltd. Дата публикации: 2014-07-31.

Image forming apparatus, control method of image forming apparatus, and non-transitory recording medium

Номер патента: US20160129714A1. Автор: Tomohiro SASA. Владелец: Ricoh Co Ltd. Дата публикации: 2016-05-12.

Signal processing apparatus, method, program, and recording medium

Номер патента: US12019700B2. Автор: Hajime Yamagiwa,Atsufumi Shibayama. Владелец: NEC Corp. Дата публикации: 2024-06-25.

Medical information processing apparatus, medical information processing method, recording medium, and information processing apparatus

Номер патента: US20240169671A1. Автор: Gakuto Aoyama. Владелец: Canon Medical Systems Corp. Дата публикации: 2024-05-23.

Predicting method, predicting apparatus, and computer-readable recording medium

Номер патента: US20210004697A1. Автор: Keisuke Goto,Hiroaki Iwashita,Takuya Takagi,Kotaro Ohori. Владелец: Fujitsu Ltd. Дата публикации: 2021-01-07.

Method for analyzing signal waveform, electronic apparatus, and computer-readable recording medium

Номер патента: US20240268767A1. Автор: Ke Han,Hung-Yi Hsu,Cheng-Yen Wang,Wen-Yung Sheng,Han-Hwa Hu. Владелец: Individual. Дата публикации: 2024-08-15.

Content reading method for reading out copyright-protected content from non-transitory recording medium, content reading apparatus, and non-transitory recording medium

Номер патента: US9946849B2. Автор: Masaya Yamamoto,Kaoru Murase. Владелец: Panasonic Intellectual Property Corp of America. Дата публикации: 2018-04-17.

Image forming apparatus, method of driving the image forming apparatus, billing apparatus, method of driving the billing apparatus, and computer-readable recording medium

Номер патента: US20140122309A1. Автор: Hwan-joon Choi,Jung-mo YEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-01.

Magneto-optical reading method and apparatus and magneto-optical recording medium used for execution of the method

Номер патента: US5883863A. Автор: Masakazu Taguchi,Akihiro Itakura. Владелец: Fujitsu Ltd. Дата публикации: 1999-03-16.

Anomalousness determination method, anomalousness determination apparatus, and computer-readable recording medium

Номер патента: US20200065954A1. Автор: Hiroyuki Yoshida,Akira Sakai,Masaaki Komatsu,Ryuji Hamamoto,Akihiko Sekizawa,Ryu Matsuoka. Владелец: RIKEN Institute of Physical and Chemical Research. Дата публикации: 2020-02-27.

Movable marking system, controlling method for movable marking apparatus, and computer readable recording medium

Номер патента: US11906305B2. Автор: Dongjun Lee,Han Seok Nam. Владелец: Landor Architecture Inc. Дата публикации: 2024-02-20.

Image display apparatus, driving method of image display apparatus, and computer readable recording medium

Номер патента: US20170160823A1. Автор: Do-Sung Kim,Yong-Deok Kim,Kwan-Young Kim,Kyu-jung JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-08.

Movable marking system, controlling method for movable marking apparatus, and computer readable recording medium

Номер патента: US20240151531A1. Автор: Dongjun Lee,Han Seok Nam. Владелец: Landor Architecture Inc. Дата публикации: 2024-05-09.

Image forming apparatus, method for controlling image forming apparatus, and non-transitory recording medium

Номер патента: US20160370735A1. Автор: Kenji Sato,Masato Mukai,Junichi Mizawa,Yasuko Yoshikawa,Ichiro Komuro,Shuuichi Endoh,Toru OHMINE,Yohsuke Saitoh. Владелец: Ricoh Co Ltd. Дата публикации: 2016-12-22.

Information Processing Apparatus, Non-Transitory Computer-Readable Recording Medium and Printer

Номер патента: US20210132882A1. Автор: Koshi Fukazawa,Po Chun Chew. Владелец: Brother Industries Ltd. Дата публикации: 2021-05-06.

Information processing apparatus, non-transitory computer-readable recording medium with information processing program recorded thereon, and information processing method

Номер патента: US20170315708A1. Автор: Yoshihisa Tanaka,Tetsuya Nishino,Isaac JUDD. Владелец: Kyocera Document Solutions Inc. Дата публикации: 2017-11-02.

Clinical recommendation method, clinical recommendation apparatus, and computer-readable recording medium

Номер патента: WO2024177618A1. Автор: An Jim Long. Владелец: Aesop Technology Inc.. Дата публикации: 2024-08-29.

Small-sized optical memory device and information processing apparatus utilizing cylindrically shaped information recording medium

Номер патента: US5109374A. Автор: Takeshi Maeda,Yoshito Tsunoda,Hiroshi Yasuoka. Владелец: HITACHI LTD. Дата публикации: 1992-04-28.

Parameter update method, parameter update apparatus, and non-transitory recording medium storing program for parameter update

Номер патента: US20200019586A1. Автор: Eisuke Takahashi. Владелец: Brother Industries Ltd. Дата публикации: 2020-01-16.

Apparatus and computer-readable recording medium for processing data based on setting conditions

Номер патента: US20130250331A1. Автор: Hiroto Kobayashi. Владелец: Ricoh Co Ltd. Дата публикации: 2013-09-26.

Information processing system, information processing apparatus, and computer-readable recording medium

Номер патента: US7200231B2. Автор: Keiichi Iwamura. Владелец: Canon Inc. Дата публикации: 2007-04-03.

Virtual machine management method, virtual machine management apparatus, and computer-readable recording medium having stored therein virtual machine management program

Номер патента: US20160132350A1. Автор: Tsunehisa Doi. Владелец: Fujitsu Ltd. Дата публикации: 2016-05-12.

Image processing apparatus and non-transitory recording medium

Номер патента: US20240176554A1. Автор: Tsuyoshi Ishikawa. Владелец: Ricoh Co Ltd. Дата публикации: 2024-05-30.

Embroidery data processing apparatus, sewing machine equipped with the embroidery data processing apparatus, and computer-readable recording medium with recorded embroidery data processing computer program

Номер патента: US20080078312A1. Автор: Satoru Makino,Atsuya Hayakawa. Владелец: Brother Industries Ltd. Дата публикации: 2008-04-03.

Information Processing Apparatus and Non-Transitory Recording Medium

Номер патента: US20170329563A1. Автор: Takashi Otsuka,Kazuma Maruyama. Владелец: KONICA MINOLTA INC. Дата публикации: 2017-11-16.

Image processing apparatus and computer-readable recording medium storing program

Номер патента: US20180372642A1. Автор: Yuka Yoshihara. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-12-27.

Information processing apparatus and computer-readable recording medium recording information processing program

Номер патента: US20210072899A1. Автор: Tomohiro Uno,Tomonori Furuta. Владелец: Fujitsu Ltd. Дата публикации: 2021-03-11.

Information processing apparatus and computer-readable recording medium including program

Номер патента: US20200118356A1. Автор: Atsushi Takahashi,Hirofumi Iikuma. Владелец: Subaru Corp. Дата публикации: 2020-04-16.

Electronic apparatus, control method of electronic apparatus and computer readable recording medium

Номер патента: US20170259667A1. Автор: Ho Hyung CHO,Min Kyu Cha. Владелец: Thinkware Corp. Дата публикации: 2017-09-14.

Data processing apparatus and non-transitory recording medium

Номер патента: US20240221438A1. Автор: Takeru Shinohara,Hajime Oyama. Владелец: Subaru Corp. Дата публикации: 2024-07-04.

Method for evaluating anti-contamination level on a surface of optical recording medium, the apparatus and the optical recording medium

Номер патента: WO2005047936A3. Автор: Jin Hong Kim,Jin Yong Kim,Hun Seo,Seung Yoon Lee. Владелец: Seung Yoon Lee. Дата публикации: 2008-02-14.

Ink jet recorded matter and production process therefor, and thermal transfer sheet, ink jet recording apparatus, thermal transfer apparatus, and ink jet recording medium

Номер патента: US6857736B2. Автор: Hiroyuki Onishi,Katsumori Takei,Hajime Mizutani,Teruaki Kaieda,Masahiro Hanmura. Владелец: Seiko Epson Corp. Дата публикации: 2005-02-22.

Method for evaluating anti-contamination level on a surface of optical recording medium, the apparatus and the optical recording medium

Номер патента: MY141301A. Автор: Jin Hong Kim,Jin Yong Kim,Hun Seo,Seung Yoon Lee. Владелец: LG ELECTRONICS INC. Дата публикации: 2010-04-16.

Optical information reproducing method, optical information reproducing apparatus, and optical information recording medium

Номер патента: US20100246348A1. Автор: Yuichiro Yamamoto,Chikara Tanioka. Владелец: Toshiba Corp. Дата публикации: 2010-09-30.

Information processing apparatus and computer-readable recording medium recording control program

Номер патента: US20220019371A1. Автор: Kazuhiro Suzuki. Владелец: Fujitsu Ltd. Дата публикации: 2022-01-20.

Image processing apparatus and computer-readable recording medium

Номер патента: US20180330501A1. Автор: Tsuyoshi Kobayashi,Shintaro Muraoka. Владелец: KONICA MINOLTA INC. Дата публикации: 2018-11-15.

Information output method, information output apparatus, and computer-readable recording medium recording a program

Номер патента: US20240126525A1. Автор: Takuya Yamaguchi,Kenta Murakami,Takamichi Matsusako,Naomi Tomiyama,Yuki Minoda,Megumi MIZOGUCHI,Kihiro YUASA. Владелец: Panasonic Intellectual Property Corp of America. Дата публикации: 2024-04-18.

Image forming apparatus and non-transitory recording medium storing computer readable control program

Номер патента: US20240192900A1. Автор: Masahiro Kamiya,Takahiro Tsujimoto,Takeshi Tamada. Владелец: KONICA MINOLTA INC. Дата публикации: 2024-06-13.

Recording and/or reproducing method, recording and/or reproducing apparatus, and computer readable recording medium storing program for performing the method

Номер патента: US7543219B2. Автор: Jung-Wan Ko,Sung-hee Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-02.

Information processing apparatus, information processing method, program recording medium, information processing system, inspection device, and inspection method

Номер патента: US20220245309A1. Автор: Yoshiki SAJI. Владелец: Canon Inc. Дата публикации: 2022-08-04.

Method of displaying flight route of unmanned aerial vehicle that flies autonomously, terminal, and non-transitory computer-readable recording medium storing program

Номер патента: US11837097B2. Автор: Shunsuke Kuhara. Владелец: Panasonic Intellectual Property Corp of America. Дата публикации: 2023-12-05.

Optical information reproducing method and apparatus, and optical information recording medium

Номер патента: EP2043091A2. Автор: Harukazu Miyamoto,Atsushi Kikugawa,Hiroyuki Minemura,Junko Ushiyama,Takahiro Kurokawa. Владелец: HITACHI LTD. Дата публикации: 2009-04-01.

Method for controlling electronic apparatus and electronic apparatus, recording medium using the method

Номер патента: US20090160807A1. Автор: Hsing-Chiang Huang,Kuo-Chen Wu,Jen-Chih Chang,Tsung-Yuan Ou. Владелец: HTC Corp. Дата публикации: 2009-06-25.

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Номер патента: US20160104522A1. Автор: Chul-woo Park,Young-Soo Sohn,Jong-Pil Son. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-04-14.

Method for providing audio game, apparatus and computer-readable recording medium with program therefor

Номер патента: US8167719B2. Автор: Seung-hee Cha. Владелец: Neowiz Games Corp. Дата публикации: 2012-05-01.

Information processing apparatus, non-transitory computer-readable recording medium, and control method

Номер патента: US10928967B2. Автор: Kenichi Fujita. Владелец: Fujitsu Component Ltd. Дата публикации: 2021-02-23.

Method of reconstructing tomograms from polychromatic X-ray transmission image and image processing apparatus using the same

Номер патента: US8958619B2. Автор: Kang-eui Lee,Young-hun Sung,Jong-Ha Lee,Kwang-Eun Jang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-02-17.

Data processing apparatus, data processing system, packet, recording medium, storage device, and data processing method

Номер патента: EP2507718A1. Автор: Mitsuru Mushano. Владелец: MUSH-A Co Ltd. Дата публикации: 2012-10-10.

Information processing apparatus, method, and non-transitory recording medium

Номер патента: US20230176822A1. Автор: Naotaka Izumi. Владелец: Ricoh Co Ltd. Дата публикации: 2023-06-08.

Information processing apparatus, non-transitory computer readable recording medium that records information processing program, and information processing method

Номер патента: US20200265277A1. Автор: Minoru Takahashi. Владелец: Kyocera Document Solutions Inc. Дата публикации: 2020-08-20.

Information processing apparatus, non-transitory computer-readable recording medium, and control method

Номер патента: US20200183540A1. Автор: Kenichi Fujita. Владелец: Fujitsu Component Ltd. Дата публикации: 2020-06-11.

Work managing method, work managing apparatus, and computer-readable recording medium

Номер патента: US20170221016A1. Автор: Hiroshi Sasaki,Takashi Shimada,Hiroyuki Tani. Владелец: Fujitsu Ltd. Дата публикации: 2017-08-03.

A method of calibrating a lithographic apparatus, an alignment method, a computer program, a lithographic apparatus and a device manufacturing method

Номер патента: SG144718A1. Автор: Gui Cheng-Qun,Buel Henricus Wilhelmus Ma Van,Vries Alex De. Владелец: ASML Netherlands BV. Дата публикации: 2008-08-28.

Reticle for use in exposing semiconductor, method of producing the reticle, and semiconductor device

Номер патента: US6352800B1. Автор: Toshifumi Suganaga. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-03-05.

Allocation method, extraction method, allocation apparatus, extraction apparatus, and computer-readable recording medium

Номер патента: US20230222367A1. Автор: Tatsuya Asai,Keisuke Goto,Hiroaki Iwashita,Kotaro Ohori,Yoshinobu Shiota. Владелец: Fujitsu Ltd. Дата публикации: 2023-07-13.

Calculation method, calculation apparatus, and computer-readable recording medium

Номер патента: US11410289B2. Автор: Akira Sakai. Владелец: Fujitsu Ltd. Дата публикации: 2022-08-09.

Image forming apparatus and non-transitory recording medium storing computer readable program

Номер патента: US20190011861A1. Автор: Akihiko Shimazu. Владелец: KONICA MINOLTA INC. Дата публикации: 2019-01-10.

Method of generating trained model, machine learning system, program, and medical image processing apparatus

Номер патента: US20230368442A1. Автор: Akira Kudo. Владелец: Fujifilm Corp. Дата публикации: 2023-11-16.

Allocation method, extraction method, allocation apparatus, extraction apparatus, and computer-readable recording medium

Номер патента: US20200279178A1. Автор: Tatsuya Asai,Keisuke Goto,Hiroaki Iwashita,Kotaro Ohori,Yoshinobu Shiota. Владелец: Fujitsu Ltd. Дата публикации: 2020-09-03.

Prediction method, prediction apparatus, and computer-readable recording medium

Номер патента: US11989663B2. Автор: Keisuke Goto,Hiroaki Iwashita,Takuya Takagi,Kotaro Ohori. Владелец: Fujitsu Ltd. Дата публикации: 2024-05-21.

Calculation method, calculation apparatus, and computer-readable recording medium

Номер патента: US20210241442A1. Автор: Akira Sakai. Владелец: Fujitsu Ltd. Дата публикации: 2021-08-05.

Method of forming resist pattern and semiconductor device manufactured with the same

Номер патента: US20080241489A1. Автор: Takeo Ishibashi,Mamoru Terai,Atsumi Yamaguchi,Takuya Hagiwara. Владелец: Renesas Technology Corp. Дата публикации: 2008-10-02.

Method of determining the boundaries of a measuring path of a gear flank testing apparatus and gear flank testing apparatus for performance of the method

Номер патента: US4356556A. Автор: Armin Sterki. Владелец: Maag Gear Wheel and Machine Co Ltd. Дата публикации: 1982-10-26.

Operation method of radiation imaging apparatus having sensor substrate and bias power supply, radiation imaging apparatus, and computer-readable medium

Номер патента: US20230204803A1. Автор: Takamasa Ishii,Masato Ofuji,Katsuro Takenaka,Masao Ina. Владелец: Canon Inc. Дата публикации: 2023-06-29.

Printing system, image forming apparatus, and non-transitory recording medium

Номер патента: US20190286036A1. Автор: Youichi MINEGISHI. Владелец: Ricoh Co Ltd. Дата публикации: 2019-09-19.

Method of playing a bingo-type game with a mechanical technological aid, and an apparatus and program product for playing the game

Номер патента: US20120252551A1. Автор: David L. Wright,Jon P. Yarbrough. Владелец: Individual. Дата публикации: 2012-10-04.

Method of playing a bingo-type game with a mechanical technological aid, and an apparatus and program product for playing the game

Номер патента: US20120302313A1. Автор: David L. Wright,Jon P. Yarbrough. Владелец: Individual. Дата публикации: 2012-11-29.

Method of playing a bingo-type game with a mechanical technological aid, and an apparatus and program product for playing the game

Номер патента: US20130252697A1. Автор: David L. Wright,Jon P. Yarbrough. Владелец: Video Gaming Technologies Inc. Дата публикации: 2013-09-26.

Information processing system, server apparatus, and computer-readable recording medium

Номер патента: US20200167878A1. Автор: Shingo Takayanagi,Sae KITABATAKE. Владелец: Ricoh Co Ltd. Дата публикации: 2020-05-28.

Methods of testing cell arrays and semiconductor devices executing the same

Номер патента: US20180102183A1. Автор: Young Bo Shim. Владелец: SK hynix Inc. Дата публикации: 2018-04-12.

Method for making semiconductor device

Номер патента: RU2677500C1. Автор: Гасан Абакарович Мустафаев,Асламбек Идрисович Хасанов,Руслан Азаевич Кутуев,Арслан Гасанович Мустафаев. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет". Дата публикации: 2019-01-17.

Recording method to generate a box type recording pattern with a first pulse having a first power level and a second pulse having a second power level, and recording apparatus, and optical recording medium for the same

Номер патента: MY147590A. Автор: Otsuka Tatsuhiro,JEONG An-sik,Lee Kyung-Geun,Hwang Wook-Yeon,Kim In-Joo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-12-31.

Method of producing composite material with improved damping properties

Номер патента: RU2568985C2. Автор: Сергей Альбертович Лурье,Юрий Олегович Соляев,Наталия Павловна Тучкова. Владелец: Федеральное государственное бюджетное учреждение науки Вычислительный центр им. А.А. Дородницына Российской академии наук (ВЦ РАН). Дата публикации: 2015-11-20.

Image forming apparatus, image forming method, print setting method of image forming apparatus, and computer-readable recording medium on which print setting program of image forming apparatus is recorded

Номер патента: US09753422B2. Автор: Takahiro Hagiwara. Владелец: Toshiba TEC Corp. Дата публикации: 2017-09-05.

Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product

Номер патента: US09715181B2. Автор: Paul Frank Luehrmann,Emil Peter SCHMITT-WEAVER,Marc Jurian Kea,Wolfgang Henke. Владелец: ASML Netherlands BV. Дата публикации: 2017-07-25.

Computational method of material constant of composite material and volume fraction of material component in composite material, and recording medium

Номер патента: US20100223313A1. Автор: Nobuo Suzuki,Kazuyuki Kabe,Seiichi Nomura. Владелец: Yokohama Rubber Co Ltd. Дата публикации: 2010-09-02.

Method of operating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product

Номер патента: US09507279B2. Автор: Paul Frank Luehrmann,Alexander Ypma,Daan Maurits SLOTBOOM,Emil Peter SCHMITT-WEAVER,Marc Jurian Kea,Wolfgang Henke,Jean-Philippe Xavier Van Damme,Eduardus Johannes Gerardus Boon. Владелец: ASML Netherlands BV. Дата публикации: 2016-11-29.

Recording medium overturning device and recording medium processing apparatus using the same

Номер патента: US20120267843A1. Автор: Ming Gao,Kai Liu,Jigang Zhang,Zhenxing Zhao. Владелец: Shandong New Beiyang Information Technology Co Ltd. Дата публикации: 2012-10-25.

Information processing apparatus and storage medium

Номер патента: US20240354131A1. Автор: Sho MAGARIYAMA. Владелец: Canon Inc. Дата публикации: 2024-10-24.

Image processing apparatus, non-transitory computer-readable recording medium having stored therein image processing program, and operation method of image processing apparatus

Номер патента: US09965698B2. Автор: Yoshiro Kitamura. Владелец: Fujifilm Corp. Дата публикации: 2018-05-08.

Method of magnetic transfer to magnetic recording medium having two recording layers and the magnetic recording medium thereof

Номер патента: US6879453B2. Автор: Akira Saito. Владелец: Fuji Electric Co Ltd. Дата публикации: 2005-04-12.

Image forming apparatus, decoloring apparatus and method of evaluating a condition of a heating portion of an image processing apparatus

Номер патента: US09796201B2. Автор: Yasuharu ARIMA. Владелец: Toshiba TEC Corp. Дата публикации: 2017-10-24.

Apparatus having an input device and a display, method of controlling apparatus and computer-readable recording medium

Номер патента: US20080203315A1. Автор: Koichiro Kasama. Владелец: Fujitsu Ltd. Дата публикации: 2008-08-28.

Electronic apparatus, control method of electronic apparatus and computer readable recording medium

Номер патента: US09644987B2. Автор: Suk Pil Ko,Gyu Hyeon PARK,Jang Youl SHIN. Владелец: Thinkware Corp. Дата публикации: 2017-05-09.

Information collection apparatus, method of controlling information collection apparatus, and non-transitory recording medium recording program

Номер патента: US20200192917A1. Автор: Kaoru TAKEMAE,Keiro Kawano. Владелец: Seiko Epson Corp. Дата публикации: 2020-06-18.

Ultrasound observation system, operation method of ultrasound imaging apparatus, and computer-readable recording medium

Номер патента: US20230181164A1. Автор: Tomonao Kawashima. Владелец: Olympus Corp. Дата публикации: 2023-06-15.

Information collection apparatus, method of controlling information collection apparatus, and non-transitory recording medium recording program

Номер патента: US11429643B2. Автор: Kaoru TAKEMAE,Keiro Kawano. Владелец: Seiko Epson Corp. Дата публикации: 2022-08-30.

Sound-generation controlling apparatus, a method of controlling the sound-generation controlling apparatus, and a program recording medium

Номер патента: US20130239789A1. Автор: Yuji Tabata. Владелец: Casio Computer Co Ltd. Дата публикации: 2013-09-19.

Drawing apparatus, method of controlling operation of the drawing apparatus, and computer readable recording medium

Номер патента: US09894976B2. Автор: Daisuke Shimizu. Владелец: Casio Computer Co Ltd. Дата публикации: 2018-02-20.

Generation method of image restoration filter, image processing method, image pickup apparatus, image processing apparatus, and recording medium

Номер патента: US9639922B2. Автор: Takeshi Watanabe. Владелец: Canon Inc. Дата публикации: 2017-05-02.

Generation method of image restoration filter, image processing method, image pickup apparatus, image processing apparatus, and recording medium

Номер патента: US20150146996A1. Автор: Takeshi Watanabe. Владелец: Canon Inc. Дата публикации: 2015-05-28.

Method for stopping pipeline laying from ship (versions) and method of resuming pipeline laying from ship, vessel and connector for said ship

Номер патента: RU2600823C2. Автор: Кристиан Скайни,Терезио СИНЬЯРОЛДИ,Кимон Туллио АРДАВАНИС. Владелец: САЙПЕМ С.п.А.. Дата публикации: 2016-10-27.

Information processing apparatus, control method for the same, and medium

Номер патента: US10209927B2. Автор: Mitsugu Yamauchi. Владелец: Canon Inc. Дата публикации: 2019-02-19.

Ultrasonic observation apparatus, operation method of ultrasonic observation apparatus, and computer readable recording medium

Номер патента: US09662090B2. Автор: Hirotaka Eda. Владелец: Olympus Corp. Дата публикации: 2017-05-30.

Generation method of image restoration filter, image processing method, image pickup apparatus, image processing apparatus, and recording medium

Номер патента: US20150146996A1. Автор: Takeshi Watanabe. Владелец: Canon Inc. Дата публикации: 2015-05-28.

Method of continuous removal of hydrogen sulphide from gas flow

Номер патента: RU2527991C1. Автор: Гэри Джей НАГЛ. Владелец: Меричем Компани. Дата публикации: 2014-09-10.

Information processing apparatus and method, program, recording medium, recommendation apparatus and method, and information processing system

Номер патента: TW201002070A. Автор: Yoshiyuki Kobayashi,Kae Nagano. Владелец: Sony Corp. Дата публикации: 2010-01-01.

Method of correcting design layout of semiconductor device, computing device performing the same, and method of fabricating semiconductor device using the same

Номер патента: US20240202424A1. Автор: Bok-yeon Won,Jichang SIM,Ohhun KWON,Hyuckjoon Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-20.

Processing system, display system, processing apparatus, processing method, and record medium

Номер патента: US20240042565A1. Автор: Yusuke Koike. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2024-02-08.

Crushing-breaking method of casting products, cutter structure used for the method and crushing-breaking apparatus of casting products

Номер патента: US20020125351A1. Автор: Yasuaki Okuya. Владелец: Individual. Дата публикации: 2002-09-12.

Storage controlling apparatus, information processing apparatus, and computer-readable recording medium having stored therein storage controlling program

Номер патента: US09983806B2. Автор: Kenichirou Shimogawa,Soichi Shigeta,Rikiya AYUKAWA. Владелец: Fujitsu Ltd. Дата публикации: 2018-05-29.

Game system, information processing apparatus, control method, and recording medium

Номер патента: US9789397B2. Автор: Takanori Nakayama. Владелец: Square Enix Co Ltd. Дата публикации: 2017-10-17.

Reproducing method, reproducing apparatus, recording and reproducing apparatus, and magnetic recording medium

Номер патента: US20060279868A1. Автор: Takeshi Nagata,Yoshihiro Okamoto,Naoto Abe,Hisashi Osawa. Владелец: Fuji Photo Film Co Ltd. Дата публикации: 2006-12-14.

Method of cleaning, support, and cleaning apparatus

Номер патента: US20240278295A1. Автор: Ker-Hsun LIAO,Yi-Chen Ho,Chih Ping Liao,Chi-Hsun Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

INFORMATION PROCESSING METHOD, INFORMATION PROCESSING APPARATUS, DISPLAY METHOD, DISPLAY APPARATUS, RECORDING MEDIUM, METHOD OF MANUFACTURING PRODUCTS, AND METHOD OF ACQUIRING LEARNING DATA

Номер патента: US20220088802A1. Автор: Kanada Satoru. Владелец: . Дата публикации: 2022-03-24.

Image forming apparatus, method of allowing driven member to be mounted on apparatus body in image forming apparatus and method of allowing drive force to be transmitted to belt unit in image forming apparatus

Номер патента: US8185027B2. Автор: Hiroaki NIEDA. Владелец: Fuji Xerox Co Ltd. Дата публикации: 2012-05-22.

Image forming Apparatus, Method of Allowing Driven Member to be Mounted on Apparatus Body in Image Forming Apparatus and Method of Allowing Drive Force to be Transmitted to Belt Unit in Image Forming Apparatus

Номер патента: US20120014715A1. Автор: Hiroaki NIEDA. Владелец: Individual. Дата публикации: 2012-01-19.

Image forming apparatus and methods thereof

Номер патента: US20120275827A1. Автор: Jonathan Nir. Владелец: Hewlett Packard Indigo BV. Дата публикации: 2012-11-01.

Image forming apparatus and method of controlling top margin of printing medium in image forming apparatus

Номер патента: US20060092265A1. Автор: Byung-Sun Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-05-04.

Reproducing method, reproducing apparatus, recording and reproducing apparatus, and magnetic recording medium

Номер патента: US20060285241A1. Автор: Takeshi Nagata,Yoshihiro Okamoto,Naoto Abe,Hisashi Osawa. Владелец: Fuji Photo Film Co Ltd. Дата публикации: 2006-12-21.

Information process apparatus and method, program record medium, and program

Номер патента: US20100278511A1. Автор: Kenji Hyodo,Masaki Hirose,Hideaki Mita,Hiroshi Saitou,Tatsushi Bannai. Владелец: Individual. Дата публикации: 2010-11-04.

Gas separation composite membrane, method of producing the same, gas separating module using the same, and gas separation apparatus and gas separation method

Номер патента: US09764293B2. Автор: Ichiro Nagata,Satoshi Sano. Владелец: Fujifilm Corp. Дата публикации: 2017-09-19.

Video game processing method, video game processing apparatus and computer readable recording medium storing video game program

Номер патента: EP1316343A3. Автор: Koji Ohno. Владелец: Square Enix Co Ltd. Дата публикации: 2004-05-26.

Information processing method, information processing apparatus and computer-readable recording medium storing information processing program

Номер патента: US20200029766A1. Автор: Takanori Ogawa. Владелец: Panasonic Intellectual Property Corp of America. Дата публикации: 2020-01-30.

Method for generating predicting model, information processing apparatus, and computer-readable recording medium having stored therein predicting model generating program

Номер патента: US20240005178A1. Автор: Manabu Nakao,Akihiro Inomata,Naoyuki Sawasaki. Владелец: Fujitsu Ltd. Дата публикации: 2024-01-04.

Method of local implicit normalizing flow for arbitrary-scale image super-resolution, and associated apparatus

Номер патента: US20240177269A1. Автор: Chun-yi Lee,Yi-Chen Lo,Chia-Che Chang,Shou-Yao Tseng,Jie-En Yao,Li-Yuan Tsao. Владелец: MediaTek Inc. Дата публикации: 2024-05-30.

Information processing apparatus and computer-readable recording medium having program recorded therein

Номер патента: US09928185B2. Автор: Takehiko Murata. Владелец: Fujitsu Ltd. Дата публикации: 2018-03-27.

Information processing system, information processing apparatus, and computer-readable recording medium

Номер патента: US09891878B2. Автор: Youichi MINEGISHI. Владелец: Ricoh Co Ltd. Дата публикации: 2018-02-13.

Coating apparatus, information processing apparatus, coating method, and recording medium

Номер патента: WO2024115985A1. Автор: Daisuke Tokunaga. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2024-06-06.

MULTI-DISPLAY DIGITAL IMAGE PROCESSING APPARATUS USING EXTERNAL DISPLAY APPARATUS, METHOD OF OPERATING THE DIGITAL IMAGE PROCESSING APPARATUS, AND COMPUTER READABLE RECORDING MEDIUM HAVING RECORDED THEREON PROGRAM FOR EXECUTING THE METHOD

Номер патента: US20130176191A1. Автор: Jang Sung-kyu. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-07-11.

MULTI-DISPLAY DIGITAL IMAGE PROCESSING APPARATUS USING EXTERNAL DISPLAY APPARATUS, METHOD OF OPERATING THE DIGITAL IMAGE PROCESSING APPARATUS, AND COMPUTER READABLE RECORDING MEDIUM HAVING RECORDED THEREON PROGRAM FOR EXECUTING THE METHOD

Номер патента: US20140125555A1. Автор: Jang Sung-kyu. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-05-08.

INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING APPARATUS STARTUP METHOD, AND RECORDING MEDIUM

Номер патента: US20150143092A1. Автор: Senda Shigeya. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2015-05-21.

IMAGE PROCESSING SYSTEM, IMAGE PROCESSING APPARATUS CONTROL METHOD, AND RECORDING MEDIUM STORING IMAGE PROCESSING APPARATUS CONTROL PROGRAM

Номер патента: US20140268225A1. Автор: KUBOTA Hajime,Shibukawa Tomoki. Владелец: . Дата публикации: 2014-09-18.

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING APPARATUS CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20140376029A1. Автор: Itoh Naotsugu. Владелец: . Дата публикации: 2014-12-25.

Image forming apparatus, information processing apparatus, customization program, and recording medium

Номер патента: JP5582012B2. Автор: 智裕 鈴木. Владелец: Ricoh Co Ltd. Дата публикации: 2014-09-03.

Apparatus for predicting cracking and processing apparatus, program product and recording medium

Номер патента: RU2445601C2. Автор: Сигеру ЙОНЕМУРА,Тохру ЙОСИДА,Акихиро УЕНИСИ,Дзун НИТТА,Такаси АРИГА. Владелец: Ниппон Стил Корпорейшн. Дата публикации: 2012-03-20.

Information processing apparatus, information processing apparatus startup method, and recording medium, configured to determine startup order of multiple modules

Номер патента: US9563441B2. Автор: Shigeya Senda. Владелец: Ricoh Co Ltd. Дата публикации: 2017-02-07.

METHOD OF ESTIMATING THE POSITION OF A WIPER BLADE, METHOD AND CONTROL UNIT USING THE SAME, AND RECORDING MEDIUM FOR SAID METHODS

Номер патента: FR2867737B1. Автор: Guillaume Vibert,Jerome Baillarguet. Владелец: PEUGEOT CITROEN AUTOMOBILES SA. Дата публикации: 2006-06-09.

Information processing method, image processing method, robot control method, product manufacturing method, information processing apparatus, image processing apparatus, robot system, and recording medium

Номер патента: US20230364798A1. Автор: Akihiro Oda,Yuichiro Kudo,Taishi Matsumoto. Владелец: Canon Inc. Дата публикации: 2023-11-16.

Method of performing game, game server and client apparatus constituting game system for executing the method, and recording medium provided with program for operating the game server

Номер патента: US20020052241A1. Автор: Mitsuhira Idaka. Владелец: Konami Corp. Дата публикации: 2002-05-02.

Computational method of material constant of composite material and volume fraction of material component in composite material, and recording medium

Номер патента: US8380776B2. Автор: Nobuo Suzuki,Kazuyuki Kabe,Seiichi Nomura. Владелец: Yokohama Rubber Co Ltd. Дата публикации: 2013-02-19.

Test system for testing semiconductor devices

Номер патента: US20240183878A1. Автор: Chih-Ming Chen,Chih-Kang TOH. Владелец: Taiwan Mask Corp. Дата публикации: 2024-06-06.

Data generation method, machine learning method, information processing apparatus, non-transitory computer-readable recording medium storing data generation program, and non-transitory computer-readable recording medium storing machine learning program

Номер патента: US20240330684A1. Автор: Satoru Koda. Владелец: Fujitsu Ltd. Дата публикации: 2024-10-03.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20130176217A1. Автор: Shoji Ryota,Inagaki Kensuke. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2013-07-11.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20130194601A1. Автор: Nakagawa Masashi. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2013-08-01.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20140075301A1. Автор: Mihara Makoto. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2014-03-13.

INFORMATION PROCESSING APPARATUS, INTERACTION METHOD, AND RECORDING MEDIUM

Номер патента: US20180004300A1. Автор: MURASE Taichi. Владелец: FUJITSU LIMITED. Дата публикации: 2018-01-04.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20160026903A1. Автор: Nakata Hiroaki. Владелец: . Дата публикации: 2016-01-28.

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING SYSTEM, OPERATION METHOD OF IMAGE PROCESSING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20190043196A1. Автор: NAKAJIMA Yoshiki. Владелец: OLYMPUS CORPORATION. Дата публикации: 2019-02-07.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20190050173A1. Автор: Suzuki Shinya. Владелец: . Дата публикации: 2019-02-14.

IMAGE PROCESSING APPARATUS, OPERATING METHOD OF IMAGE PROCESSING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20200054400A1. Автор: KONO Takashi,KANDA Yamato,HAYAMI Takehito. Владелец: OLYMPUS CORPORATION. Дата публикации: 2020-02-20.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20140139529A1. Автор: MUKAI Tomohiko. Владелец: SQUARE ENIX CO., LTD.. Дата публикации: 2014-05-22.

INFORMATION PROCESSING APPARATUS, CLUSTERING METHOD, AND RECORDING MEDIUM STORING CLUSTERING PROGRAM

Номер патента: US20140149412A1. Автор: NAKAMURA Satoshi. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2014-05-29.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20170091818A1. Автор: Miyajima Hiroyuki. Владелец: . Дата публикации: 2017-03-30.

INFORMATION PROCESSING APPARATUS, PRINTING METHOD, AND RECORDING MEDIUM

Номер патента: US20200097229A1. Автор: NAKAMURA Aoi. Владелец: . Дата публикации: 2020-03-26.

IMAGE PROCESSING APPARATUS, MICROSCOPE SYSTEM, AND RECORDING MEDIUM

Номер патента: US20140198197A1. Автор: KAMINAGA Shigeto. Владелец: OLYMPUS CORPORATION. Дата публикации: 2014-07-17.

INFORMATION PROCESSING APPARATUS, METHOD, PROGRAM, AND RECORDING MEDIUM

Номер патента: US20140225629A1. Автор: Igari Tatsuya. Владелец: SONY CORPORATION. Дата публикации: 2014-08-14.

OPERATING METHOD OF IMAGE PROCESSING APPARATUS, IMAGE PROCESSING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20210174147A1. Автор: OTSUKA Takeshi. Владелец: OLYMPUS CORPORATION. Дата публикации: 2021-06-10.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20150161494A1. Автор: Oishi Tetsu. Владелец: . Дата публикации: 2015-06-11.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20160162226A1. Автор: Suzuki Shinya. Владелец: . Дата публикации: 2016-06-09.

SOUND PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20220310054A1. Автор: Kitazawa Kyohei. Владелец: . Дата публикации: 2022-09-29.

IMAGE PROCESSING APPARATUS, CONTROL METHOD AND RECORD MEDIUM

Номер патента: US20170186201A1. Автор: Ikeda Tohru,Goto Fumitaka,Kunieda Hiroyasu,Kato Masao,Obayashi Masaaki,Mizoguchi Yoshinori,Kurokawa Maya. Владелец: . Дата публикации: 2017-06-29.

IMAGE PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20170228853A1. Автор: Nakayama Fumitaka. Владелец: . Дата публикации: 2017-08-10.

Information processing apparatus, print system, and recording medium

Номер патента: US20150248259A1. Автор: Shohgo KUMAGAI. Владелец: Ricoh Co Ltd. Дата публикации: 2015-09-03.

GAME SYSTEM, INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20150251090A1. Автор: NAKAYAMA Takanori. Владелец: SQUARE ENIX CO., LTD.. Дата публикации: 2015-09-10.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20200242242A1. Автор: Mori Satoshi. Владелец: RICOH COMPANY, LTD.. Дата публикации: 2020-07-30.

SIGNAL PROCESSING APPARATUS, METHOD, PROGRAM, AND RECORDING MEDIUM

Номер патента: US20210342102A1. Автор: Shibayama Atsufumi,YAMAGIAWA Hajime. Владелец: NEC Corporation. Дата публикации: 2021-11-04.

Method of Manufacturing Semiconductor Device, Cleaning Method, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium

Номер патента: US20130102161A1. Автор: Asai Masayuki. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2013-04-25.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM

Номер патента: US20120329286A1. Автор: TAKEDA Tsuyoshi,SATO Taketoshi. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2012-12-27.

Semiconductor device manufacturing method, substrate processing device, gas supply system, and recording medium

Номер патента: TWI672800B. Автор: 森谷敦,中磯直春,渡橋由悟,村上孝太郎. Владелец: 日商國際電氣股份有限公司. Дата публикации: 2019-09-21.

ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE

Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

Method of manufacturing interconnections for semiconductor devices

Номер патента: RU2593415C1. Автор: Сергей Владимирович Дубков,Дмитрий Геннадьевич Громов,Евгений Александрович Лебедев,Борис Николаевич Рыгалин,Алексей Сергеевич Шулятьев. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ). Дата публикации: 2016-08-10.

Method of manufacturing interconnections for semiconductor devices

Номер патента: RU2593416C1. Автор: Сергей Владимирович Дубков,Дмитрий Геннадьевич Громов,Евгений Александрович Лебедев,Борис Николаевич Рыгалин,Алексей Сергеевич Шулятьев. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ). Дата публикации: 2016-08-10.

Mode of manufacturing of a heat exchanging section of a gas air cooling apparatus and a heat exchanging section of a gas air cooling apparatus

Номер патента: RU2266491C1. Автор: В.М. Терехов,В.А. Коневских,В.Н. Жигалов. Владелец: Овчар Владимир Герасимович. Дата публикации: 2005-12-20.

HOLOGRAM RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME, HOLOGRAM REPRODUCTION APPARATUS, AND HOLOGRAM REPRODUCTION METHOD

Номер патента: US20120002257A1. Автор: Shirakura Akira,Baba Shigeyuki,Arai Toshiyuki,Higashihara Teruaki. Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Номер патента: US20120001304A1. Автор: . Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001257A1. Автор: MURAKAWA Kouichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-01-05.

PACKAGE FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE

Номер патента: US20120001312A1. Автор: . Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001345A1. Автор: Hwang Kihyun,YANG Junkyu,Choi Hanmei,Park ChanJin,Min Gyungjin,Yoo Dongchul,Kong Yoochul. Владелец: . Дата публикации: 2012-01-05.

Methods of Forming Nonvolatile Memory Devices Using Nonselective and Selective Etching Techniques to Define Vertically Stacked Word Lines

Номер патента: US20120003831A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM

Номер патента: US20130065391A1. Автор: TAKEDA Tsuyoshi,Ogawa Arito. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2013-03-14.

METHOD OF ARRANGING PADS IN SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE USING THE METHOD, AND PROCESSING SYSTEM HAVING MOUNTED THEREIN THE SEMICONDUCTOR MEMORY DEVICE

Номер патента: US20120002456A1. Автор: OH Chi-sung. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

Method of making interconnections for semiconductor device

Номер патента: RU2421847C1. Автор: Сергей Александрович Гаврилов,Сергей Владимирович Дубков,Дмитрий Геннадьевич Громов,Андрей Евгеньевич Миронов,Алексей Сергеевич Шулятьев. Владелец: Государственное образовательное учреждение высшего профессионального образования Московский государственный институт электронной техники (технический университет) (МИЭТ). Дата публикации: 2011-06-20.

Method of forming system of flows in working chamber of heat-and-mass exchange apparatus and heat-and-mass exchanger apparatus for realization of this method

Номер патента: RU2137074C1. Автор: А.Ф. Гуцол. Владелец: Поляков Евгений Георгиевич. Дата публикации: 1999-09-10.

Method of manufacture of mos semiconductor devices

Номер патента: PL239947A1. Автор: Tadeusz Piotrowski,Wojciech Jung,Marek Rozental. Владелец: Inst Tech Elektronowej. Дата публикации: 1984-07-16.

Method of manufacture of mos semiconductor devices

Номер патента: PL136425B1. Автор: Tadeusz Piotrowski,Wojciech Jung,Marek Rozental. Владелец: Inst Tech Elektronowej. Дата публикации: 1986-02-28.

SUBSTRATE CARTRIDGE, SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING SYSTEM, SUBSTRATE-PROCESSING METHOD, CONTROL APPARATUS, AND METHOD OF MANUFACTURING DISPLAY ELEMENT

Номер патента: US20120215338A1. Автор: Inoue Hideya. Владелец: . Дата публикации: 2012-08-23.

IMPROVEMENTS IN OR RELATING TO METHODS OF X'v MANUFACTURING SEMICONDUCTOR DEVICES

Номер патента: AU270812B2. Автор: ADRIAAN GROENEWEGEN and NAHUM DEMIROVSKI MARTINIS. Владелец: . Дата публикации: 1964-03-05.

Methods of manufacturing housings for semiconductor devices

Номер патента: CA903930A. Автор: Diel Burkhart,Gregor Kurt,Huber Walther. Владелец: SIEMENS AG. Дата публикации: 1972-06-27.

Improvements in the Method of Forming Duplicate Sound Record Cylinders of Celluloid or similar Materials and the Apparatus and Devices connected therewith.

Номер патента: GB190207146A. Автор: Ademor Napoleon Petit. Владелец: Individual. Дата публикации: 1903-03-24.

Substrate processing apparatus, simulation apparatus for substrate processing apparatus, and computer-readable recording medium

Номер патента: JP3977554B2. Автор: 健一 伊藤,修治 長良,智彦 宮城. Владелец: Screen Holdings Co Ltd. Дата публикации: 2007-09-19.

Method of and system for getting semiconductor devices of improved properties and preliminary selection of avalanche devices

Номер патента: PL131247B1. Автор: Henryk Rzepa,Jerzy Kuchta. Владелец: Politechnika Gdanska. Дата публикации: 1984-10-31.

Image processing apparatus, method for controlling image processing apparatus, control program, and recording medium

Номер патента: US20120038955A1. Автор: Ooshio Hideyoshi. Владелец: . Дата публикации: 2012-02-16.

Information recording apparatus and method, information reproducing apparatus and method, information recording medium, program storage medium, and program

Номер патента: AU2002237528A1. Автор: Masanobu Nakamura,Motoki Kato. Владелец: Sony Corp. Дата публикации: 2002-09-12.

IMAGE PROCESSING APPARATUS, METHOD THEREOF, AND RECORDING MEDIUM

Номер патента: US20120008013A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2012-01-12.

Image Processing Apparatus, Processing Method, and Recording Medium

Номер патента: US20120171962A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2012-07-05.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM OF CONTROL PROGRAM

Номер патента: US20120198480A1. Автор: NISHIGUCHI Naoki,Iwamatsu Noboru,Yasaki Masatomo,NODA Masahide. Владелец: FUJITSU LIMITED. Дата публикации: 2012-08-02.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD AND RECORDING MEDIUM

Номер патента: US20120212781A1. Автор: Kohata Toru. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2012-08-23.

INFORMATION PROCESSING APPARATUS, CORRECTION METHOD, AND RECORDING MEDIUM

Номер патента: US20120252502A1. Автор: . Владелец: FUJITSU LIMITED. Дата публикации: 2012-10-04.

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND RECORDING MEDIUM

Номер патента: US20120327454A1. Автор: Hasama Yuichi. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2012-12-27.

IMAGE PROCESSING SYSTEM, PORTABLE TERMINAL, IMAGE PROCESSING APPARATUS IDENTIFYING METHOD, AND RECORDING MEDIUM

Номер патента: US20130027746A1. Автор: SASASE Naoko. Владелец: Konica Minolta Business Technologies, Inc.. Дата публикации: 2013-01-31.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.