High voltage generator and high voltage generating method of semiconductor device .

High voltage generator and high voltage generating method of semiconductor device

Номер патента: KR101024137B1
Опубликовано: 22-03-2011
Автор(ы): 강인호, 권이현
Принадлежит: 주식회사 하이닉스반도체
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Method of forming a semiconductor device with metal silicide regions

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Semiconductor Device, Memory Module, and Method of Manufacturing a Semiconductor Device

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Method of manufacturing a semiconductor device by implanting ions through bevelled oxide layer in single masking step

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Method of manufacturing a semiconductor device having a buried region with higher impurity concentration

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Method of manufacturing a semiconductor device

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Method of passivating a semiconductor device by treatment with atomic hydrogen

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Method of manufacturing a semiconductor device by plasma etching of a double layer

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Method of fabricating a semiconductor device

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Method of manufacturing a semiconductor device using trench isolation

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Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls

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Method of fabricating a semiconductor device

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Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state

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Method of manufacturing a semiconductor device having groove-shaped via-hole

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Method of manufacturing a semiconductor device having unhomogeneous distribution of impurity concentration

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Method of selectively etching compound semiconductor and method of manufacturing compound semiconductor device using the selective etching method

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Semiconductor device, integrated circuit and method of forming a semiconductor device

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Method of manufacturing a semiconductor device with a BiCMOS circuit

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Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface

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Laser irradiation method and method of manufacturing a semiconductor device

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Method of forming a semiconductor device

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Method of manufacturing a semiconductor device including a sram section and a logic circuit section

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Wafer and method of making, and semiconductor device

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates

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Method of manufacturing a semiconductor device

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Semiconductor device and a method of manufacturing a semiconductor device

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Method of Forming a Semiconductor Device

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Semiconductor device having package on package structure and method of manufacturing the semiconductor device

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Method of forming a semiconductor device having a capacitor and a resistor

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Semiconductor device and method of fabricating a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of forming the semiconductor device

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Optoelectronic semiconductor device and manufacturing method of an optoelectronic semiconductor device

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Method of fabricating a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Methods of manufacturing a semiconductor device with local isolation and a semiconductor device with local isolation

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Method of fabricating a semiconductor device

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Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same

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Method of manufacturing a semiconductor device

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Method of forming power semiconductor device

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Semiconductor device and method of forming the semiconductor device

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Method of fabricating a semiconductor device

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device with self-aligning landing pad

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Method of manufacturing a semiconductor device with self-aligning landing pad

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Manufacturing method of silicon carbide semiconductor device

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Semiconductor device and method of fabricating a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of forming a semiconductor device having impurity region

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Method of forming a semiconductor device having impurity region

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Semiconductor device and method of fabricating a semiconductor device

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Method of making a semiconductor device

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Method of manufacturing compound semiconductor device with gate electrode forming before source electrode and drain electrode

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Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

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Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

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Method of forming a semiconductor device

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Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

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Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions

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Method of manufacturing a semiconductor device and semiconductor wafer

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Semiconductor device in which an electrode of a semiconductor element is joined to a joined member and methods of manufacturing the semiconductor device

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Номер патента: US20160329263A1. Автор: Werner Robl,Michael Rogalli,Johann Gross,Michael Nelhiebel,Robert Illing,Thomas Detzel,Stefan Woehlert,Maximilian Krug,Sven Gustav Lanzerstorfer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-11-10.

Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core

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Method of manufacturing a semiconductor device with multilayered channel structure

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Method of manufacturing a semiconductor device with multilayered channel structure

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Method of manufacturing a semiconductor device with multilayered channel structure

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Method of Manufacturing a Semiconductor Device Having Electrode Trenches, Isolated Source Zones and Separation Structures

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Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

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Strained semiconductor devices and methods of fabricating strained semiconductor devices

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Method of fabricating a semiconductor device and the semiconductor device with a capacitor structure having increased capacitance

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Method of making a semiconductor device having a conductor pattern side face provided with a separate conductive sidewall

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Номер патента: US11764289B2. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

Номер патента: US20240006505A1. Автор: Sung-Li Wang,Po-Chin Chang,Pinyen Lin,Shuen-Shin Liang,Chia-Hung Chu,Yuting CHENG,Lin-Yu HUANG,Hsu-Kai Chang,Tzu-Pei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-04.

High voltage arm assembly with integrated resistor, automatic high voltage deflection electrode locator, and special insulation

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High voltage arm assembly with integrated resistor, automatic high voltage deflection electrode locator, and special insulation

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High voltage arm assembly with integrated resistor, automatic high voltage deflection electrode locator, and special insulation

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Highly active and highly selective catalyst of ethylene oligomerisation and method of obtaining hexene or octene with application of said catalyst

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Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

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Method of manufacturing a semiconductor device

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Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

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Multi-chamber discharger, high-voltage insulator with multichamber discharger and high-voltage power transmission line using such insulator

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High voltage generator and high voltage generating method of semiconductor device

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