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Fabrication method of semiconductor device

Номер патента: US20040014283A1
Опубликовано: 22-01-2004
Автор(ы): Shouji Satou, Toshitaka Yamamoto
Принадлежит: HITACHI LTD
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Method of fabricating a semiconductor device,method of cleaning a crystalline surface of a semiconductor,and semiconductor device

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Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices

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Method of manufacturing a semiconductor device and a semiconductor device

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Semiconductor device and method of fabricating a semiconductor device

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Optical semiconductor device and method of fabricating optical semiconductor device

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of manufacturing a semiconductor device and semiconductor device

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Manufacturing method of silicon carbide semiconductor device

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Method of forming a semiconductor device structure and semiconductor device structure

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Semiconductor device and method of forming PoP semiconductor device with RDL over top package

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Semiconductor device and method of manufacturing the semiconductor device

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Method of fabricating a semiconductor device including a plurality of isolation features

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Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device

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Method of fabricating a semiconductor device and a semiconductor device fabricated by the method

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Method of forming a semiconductor device structure and such a semiconductor device structure

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Method of manufacturing a semiconductor device with a continuous silicate glass structure

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Method of manufacturing a semiconductor device with buried channel/body zone and semiconductor device

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Method of manufacturing a semiconductor device

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Production method of silicon carbide wafer, production method of semiconductor substrate, and production method of silicon carbide semiconductor device

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Method of manufacturing a semiconductor device

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Method of Manufacturing a Semiconductor Device with a Metal-Filled Groove in a Polysilicon Gate Electrode

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Method of severing a semiconductor device composite

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Method of forming a semiconductor device

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Method of making a semiconductor device using multiple layer sets

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device and corresponding semiconductor device

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Manufacturing method of three-dimensional semiconductor device including contact plugs

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Method of Manufacturing a Semiconductor Device by Plasma Doping

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device having different kinds of insulating films with different thicknesses

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Semiconductor devices having a multi-oxide semiconductor channel layer and methods of manufacturing the semiconductor devices

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of producing a semiconductor device

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Methods of manufacturing a semiconductor device and a semiconductor memory device thereby

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Method of manufacturing a semiconductor device with a bicmos circuit

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Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

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Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

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Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate

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Method of fabricating a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of forming a semiconductor device including strain reduced structure

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Semiconductor device, method of manufacturing a semiconductor device, and positioning jig

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component

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Method of severing a semiconductor device composite

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Method of manufacturing a semiconductor device including a silicon pillar

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Method of manufacturing a semiconductor device having an alignment mark

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Method of Manufacturing a Semiconductor Device having a Buried Field Plate

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Method of manufacturing a semiconductor device, pattern correction apparatus, and computer-readable recording medium

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Method of manufacturing a semiconductor device and semiconductor device

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Method of manufacturing a semiconductor device and semiconductor device

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Method of manufacturing a semiconductor device and semiconductor device

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Method of manufacturing a semiconductor device having a trench isolation structure

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Method of manufacturing a semiconductor device and semiconductor device

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Method of manufacturing a semiconductor device and an apparatus for use in such a method

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of manufacturing a semiconductor device for reducing resistance of a CoSi2 layer

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Semiconductor device, an electronic system including the same, and a method of manufacturing the semiconductor device

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Lead frame, semiconductor device, and method of manufacturing the semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Semiconductor Device and Method of Manufacturing the Semiconductor Device

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Semiconductor device and method of manufacturing the semiconductor device

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Structure and method of forming a semiconductor device with resistive elements

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Method of manufacturing a semiconductor device

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Method of Manufacturing a Semiconductor Device Having a Rear-Side Insert Structure

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Semiconductor device and method of manufacturing a semiconductor device

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Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate

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Method of manufacturing a semiconductor device and semiconductor device manufactured thereof

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Semiconductor device and method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Methods of forming a semiconductor device and related semiconductor devices

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Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

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Method of fabricating a semiconductor device

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Method of manufacturing a semiconductor device with a multilayer wiring

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device including a semiconductor material of the aiibvi type,and semiconductor device manufactured by this method

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of making a semiconductor device

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Method of producing a semiconductor device having a light transparent window

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Method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device with capacitor electrodes

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Method of manufacturing a semiconductor device with high packing density and having field effect transistors

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Method of making a semiconductor device

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Vertical semiconductor device with body contact, method of manufacturing vertical semiconductor device with body contact, and electronic apparatus

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Method of producing a semiconductor device

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Method of manufacturing a semiconductor device

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Method of making a semiconductor device

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Method of producing a semiconductor device comprising a cleaning process for removing silicon-containing material

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Method of manufacturing a semiconductor device and a semiconductor device

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Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

Номер патента: WO2015124465A1. Автор: Rainer Minixhofer,Martin Schrems,Sara Carniello. Владелец: ams AG. Дата публикации: 2015-08-27.

Method of forming a semiconductor device

Номер патента: US11888024B2. Автор: Hans-Joachim Schulze,Reinhard Ploss. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-01-30.

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

Номер патента: US11862476B2. Автор: Ho Lee,Sang Woo Lee,Chankyung Kim,Jaehong MIN,Junsoo Kim,Minhee Cho,Sangwuk PARK,Woo Bin Song,Hei Seung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Method of manufacturing a semiconductor device

Номер патента: US6319812B1. Автор: Yoshinori Tanaka,Yoshifumi Takata,Masatoshi Anma. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-11-20.

Semiconductor device and method of forming the semiconductor device

Номер патента: US11869936B2. Автор: Eric R. Miller,Gauri Karve,Fee Li LIE,Sean TEEHAN,Marc Adam Bergendahl,Robert Russell Robison,John Ryan Sporre. Владелец: International Business Machines Corp. Дата публикации: 2024-01-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230377984A1. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Manufacturing method of silicon carbide semiconductor device

Номер патента: US20130330896A1. Автор: Tsuyoshi Ishikawa,Masahiro Sugimoto,Toshimasa Yamamoto,Yukihiko Watanabe,Hidefumi Takaya,Narumasa Soejima,Shinichiro Miyahara. Владелец: Toyota Motor Corp. Дата публикации: 2013-12-12.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US20210013039A1. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: Denso Corp. Дата публикации: 2021-01-14.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: WO2019159680A1. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO. Дата публикации: 2019-08-22.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

Номер патента: US11501971B2. Автор: Toru Onishi,Kensaku Yamamoto,Katsuhiro KUTSUKI. Владелец: Denso Corp. Дата публикации: 2022-11-15.

Method of manufacturing a semiconductor device having a bond wire or clip bonded to a bonding pad

Номер патента: US11837528B2. Автор: Anton Mauder,Hans-Joachim Schulze. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2023-12-05.

Method of manufacturing a semiconductor device with metal gate etch selectivity control

Номер патента: US20180174915A1. Автор: Yi-Wei Chiu,Chia-Ching Tsai,Li-Te Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-06-21.

Method of Manufacturing a Semiconductor Device

Номер патента: US20160268397A1. Автор: Thorsten Meyer,Till Schloesser,Andreas Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-09-15.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11830947B2. Автор: Martin Christopher Holland,Mark Van Dal,Gerben Doornbos,Blandine Duriez. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

Method of fabricating a semiconductor device

Номер патента: US11830874B2. Автор: Yoon Tae Hwang,Wandon Kim,Geunwoo Kim,Hyunbae Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-11-28.

Method of Fabricating a Semiconductor Device

Номер патента: US20240038848A1. Автор: Carsten Ahrens,Helmut Brech,Matthias Zigldrum. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-02-01.

Method of manufacturing a semiconductor device and substrate processing apparatus

Номер патента: US20120009764A1. Автор: Atsushi Moriya,Takaaki Noda,Kiyohiko Maeda,Kiyohisa Ishibashi. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2012-01-12.

Method of forming a semiconductor device with a dual gate dielectric layer having middle portion thinner than the edge portions

Номер патента: US11968828B2. Автор: Yong-Shiuan Tsair,Meng-Han LIN,Wen-Tuo Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Semiconductor device in which an electrode of a semiconductor element is joined to a joined member and methods of manufacturing the semiconductor device

Номер патента: US9824994B2. Автор: Takuya Kadoguchi. Владелец: Toyota Motor Corp. Дата публикации: 2017-11-21.

Method of manufacturing a semiconductor device

Номер патента: US20160254264A1. Автор: Tomonori MIZUSHIMA. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-09-01.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11823957B2. Автор: I-Sheng Chen,Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-21.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20110241211A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2011-10-06.

Method of manufacturing a semiconductor device and semiconductor device

Номер патента: US20120326315A1. Автор: Hisaya Sakai,Kazuya Okubo,Kazuo Kawamura,Shinichi Akiyama,Hirofumi Watatani. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2012-12-27.

Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core

Номер патента: US6417039B2. Автор: Marian N. Webster. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2002-07-09.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US20230411215A1. Автор: Tung Ying Lee,Wei-Sheng Yun,Shao-Ming Yu,Fu-Hsiang Yang. Владелец: Tatwan Semiconductor Manufacturing Comany Ltd. Дата публикации: 2023-12-21.

Manufacturing method of high-voltage semiconductor device with increased breakdown voltage

Номер патента: US11769794B2. Автор: Chao Sun. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-26.

Method of manufacturing a semiconductor device

Номер патента: US20240145582A1. Автор: Ling-Yen Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Method of Processing a Semiconductor Device

Номер патента: US20170236913A1. Автор: Martin Poelzl,Heimo Hofer,Britta Wutte. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-08-17.

Method of manufacturing a semiconductor device including a stress film

Номер патента: US8383486B2. Автор: Hiroyuki Umimoto,Masafumi Tsutsui,Kaori Akamatsu. Владелец: Panasonic Corp. Дата публикации: 2013-02-26.

Method of Manufacturing a Semiconductor Device Having Electrode Trenches, Isolated Source Zones and Separation Structures

Номер патента: US20180090594A1. Автор: Hans-Joachim Schulze,Johannes Georg Laven,Matteo Dainese,Peter Lechner,Roman Baburske. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-03-29.

Method of fabricating a semiconductor device and the semiconductor device with a capacitor structure having increased capacitance

Номер патента: US6512261B2. Автор: Akinori Kinugasa. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-01-28.

Method of forming a semiconductor device including strain reduced structure

Номер патента: US20180047686A1. Автор: Hsien-Wei Chen,Yu-feng Chen,Tsung-Ding Wang,Ying-Ju Chen,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-15.

Method of manufacturing a semiconductor device

Номер патента: US20240105842A1. Автор: Sunghwan JANG,Pyung MOON,Dohee Kim,Sunguk JANG,Mina SEOL. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-28.

Method of manufacturing a semiconductor device

Номер патента: US20240145306A1. Автор: Daeseok Byeon,Taehong KWON,Gyosoo Choo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-02.

Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device

Номер патента: US20130175538A1. Автор: Jong-Seob Kim,In-jun Hwang,Jai-Kwang Shin,Jae-joon Oh,Hyuk-soon Choi,Jong-Bong Ha,Ki-ha Hong,Chang-Yong Um. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-07-11.

Semiconductor device and method of forming a semiconductor device

Номер патента: US20150270276A1. Автор: Bernd Landgraf. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2015-09-24.

Method of manufacturing a semiconductor device and a semiconductor device

Номер патента: US11764289B2. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Martin Christopher Holland,Gerben Doornbos,Blandine Duriez,Timothy Vasen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

Method of forming a semiconductor device

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Method of forming a semiconductor device

Номер патента: US20200395468A1. Автор: Peter A. Burke,Dean E. Probst,Prasad Venkatraman,Peter McGrath,Masaichi Eda,Jeffery A. NEULS. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2020-12-17.

Method of manufacturing a semiconductor device

Номер патента: US10236294B2. Автор: Chun-Yuan Wu,Yu-Chieh Lin,Shih-Fang Tzou,Li-Wei Feng,Ying-Chiao Wang,Chien-Ting Ho,Tsung-Ying Tsai. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-03-19.

Semiconductor devices including seed structure and method of manufacturing the semiconductor devices

Номер патента: US11935858B2. Автор: Seungmin Baek. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-03-19.

Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device

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Method of forming a semiconductor device

Номер патента: US20160104796A1. Автор: Thierry Coffi Herve Yao,Moshe Agam. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2016-04-14.

Method of manufacturing a semiconductor device and a semiconductor device

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Method of manufacturing a semiconductor device

Номер патента: EP1579488B1. Автор: Marcus J. H. Van Dal,Jacob C. Hooker,Vincent C. Venezia,Charles J. J. Dachs. Владелец: NXP BV. Дата публикации: 2011-12-07.

Method of fabricating a semiconductor device with reduced leak paths

Номер патента: US20150332957A1. Автор: Guan-Jie Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-11-19.

Method of manufacturing a semiconductor device having an inverted t-shaped metal gate between inner spacers

Номер патента: US20190371913A1. Автор: Chen Zhang,Kangguo Cheng,Xin Miao,Wenyu Xu. Владелец: International Business Machines Corp. Дата публикации: 2019-12-05.

Method of forming a semiconductor device

Номер патента: US20150064895A1. Автор: Kanta Saino. Владелец: PS4 Luxco SARL. Дата публикации: 2015-03-05.

Method of fabricating a semiconductor device including multiple contacts

Номер патента: US11984400B2. Автор: Feng-Ming Chang,Jui-Lin Chen,Kian-Long Lim,Chao-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-14.

Method of Manufacturing a Semiconductor Device Comprising First and Second Field Stop Zone Portions

Номер патента: US20190165090A1. Автор: Hans-Joachim Schulze,Franz-Josef Niedernostheide,Stephan Voss,Oana Julia Spulber. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2019-05-30.

Semiconductor device and method of manufacturing a semiconductor device

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Method of manufacturing a semiconductor device

Номер патента: US20130316523A1. Автор: Nobuyuki SUZUKI,Satoshi Suzuki,Keiichi Sasaki,Masanobu Ohmura,Tomohiro Migita,Takatoshi Nakahara. Владелец: Canon Inc. Дата публикации: 2013-11-28.

Semiconductor device and method of manufacturing the semiconductor device

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Method of manufacturing a semiconductor device and a semiconductor device

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Method of forming trench semiconductor device having multiple trench depths

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Method of manufacturing a semiconductor device

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Method of severing a semiconductor device composite

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Method of fabricating monos semiconductor device

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Semiconductor device and method of manufacturing the semiconductor device

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Semiconductor device, an electronic system including the same, and a method of manufacturing the semiconductor device

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Method of producing a semiconductor device having spicular-shaped field plate structures and a current spread region

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Semiconductor device and method of manufacturing a semiconductor device

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Apparatus for manufacturing a semiconductor device and method of manufacturing a semiconductor device

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Method of fabricating integrated semiconductor device and structure thereof

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Method of fabricating integrated semiconductor device and structure thereof

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Titanium etchant composition and method of forming a semiconductor device using the same

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Titanium etchant composition and method of forming a semiconductor device using the same

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Method of manufacturing a semiconductor device

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Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

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Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device

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