Semiconductor device with control structure including buried portions and method of manufacturing.

Semiconductor device with control structure including buried portions and method of manufacturing

Номер патента: US09536999B2
Опубликовано: 03-01-2017
Автор(ы): Hans-Joachim Schulze, Johannes Georg Laven, Matteo Dainese, Peter Lechner, Roman Baburske
Принадлежит: INFINEON TECHNOLOGIES AG
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Semiconductor device with control structure including buried portions and method of manufacturing

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