MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME.

MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME

Номер патента: US20140008744A1
Опубликовано: 09-01-2014
Автор(ы): Gan Huadong, Huai Yiming, Wang Zihui, Zhou Yuchen
Принадлежит: AVALANCHE TECHNOLOGY INC.
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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