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Tunnel junction utilizing GaPSb, AlGaPSb

Номер патента: US20050094692A1
Опубликовано: 05-05-2005
Автор(ы): Jin Kim
Принадлежит: Finisar Corp
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Long wavelength vcsel with tunnel junction and implant

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Номер патента: WO2004049528A2. Автор: Ralph H. Johnson,Tzu-Yu Wang. Владелец: FINISAR CORPORATION. Дата публикации: 2004-06-10.

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Номер патента: US20210104872A1. Автор: Chin Yu-Chung,Huang Chao-Hsing,Dai Van-Truong. Владелец: . Дата публикации: 2021-04-08.

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Номер патента: EP1766689A1. Автор: Rajaram Bhat,Nobuhiko Nishiyama. Владелец: Corning Inc. Дата публикации: 2007-03-28.

Tunnel junctions for long-wavelength vcsels

Номер патента: WO2005117135A1. Автор: Rajaram Bhat,Nobuhiko Nishiyama. Владелец: CORNING INCORPORATED. Дата публикации: 2005-12-08.

Tunnel junctions for long-wavelength vcsels

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Tunnel junctions for long-wavelength vcsels

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Tunnel junction patterning for controlling optical and current confinement in a vertical-cavity surface-emitting laser

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Iii-nitride-based vertical cavity surface emitting laser (vcsel) with a dielectric p-side lens and an activated tunnel junction

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Iii-nitride-based vertical cavity surface emitting laser (vcsel) with a dielectric p-side lens and an activated tunnel junction

Номер патента: WO2024044567A3. Автор: Shuji Nakamura,Stephen Gee,Daniel A. Cohen,Jared KEARNS,Nathan PALMQUIST. Владелец: The Regents of the University of California. Дата публикации: 2024-03-28.

VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH INTEGRATED TUNNEL JUNCTION

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Method for producing a buried tunnel junction in a surface emitting semiconductor laser and surface emitting semiconductor laser

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Tunnel junctions for long-wavelength VCSELs

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Methods and structures to improve the performance of iii-nitride tunnel junctions

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Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

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Method of forming magnetic tunnel junction device

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Ferromagnetic tunnel junction element and method of driving ferromagnetic tunnel junction element

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Magnetic devices having perpendicular magnetic tunnel junction

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Magnetic tunnel junction transistor devices

Номер патента: GB2505599A. Автор: Vladislav Korenivski,Daniel C Worledge. Владелец: International Business Machines Corp. Дата публикации: 2014-03-05.

Tunnel Junction Device

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Magnetic tunnel junctions

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Magnetoresistive double spin filter tunnel junction

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Ultra-violet treatment for a tunnel barrier layer in a tunnel junction device

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Self-pinned double tunnel junction head

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Tunnel junctions in microfluidic arrays for molecular recognition

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Method of manufacturing a magnetic tunnel junction device

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Method of manufacturing a magnetic tunnel junction device

Номер патента: US20060128037A1. Автор: Reinder Coehoorn,Dark Adelerhof,Joannes Baptist Van Zon. Владелец: Individual. Дата публикации: 2006-06-15.

Method of manufacturing a magnetic tunnel junction device

Номер патента: EP1116248A1. Автор: Joannes B. A. D. Van Zon. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2001-07-18.

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Magnetic Random Access Memory (MRAM) Manufacturing Process for a Small Magnetic Tunnel Junction (MTJ) Design with a Low Programming Current Requirement

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Generating a Non-Reversible State at a Bitcell Having a First Magnetic Tunnel Junction and a Second Magnetic Tunnel Junction

Номер патента: US20120033490A1. Автор: . Владелец: QUALCOMM INCORPORATED. Дата публикации: 2012-02-09.

Method for constructing tunnel junction and tunnel junction

Номер патента: JP4493936B2. Автор: 正 吉川,幸信 佐々木,孝志 小林,雅由 中川,浩二 馬野,孝義 青柳,行高 山本. Владелец: Kajima Corp. Дата публикации: 2010-06-30.

Magnetic tunneling junction cell and the method for preparing magnetic tunneling junction cell

Номер патента: CN105206741B. Автор: 张宏. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-02-12.

Underground junction tunnel excavator and tunnel junction method

Номер патента: JP4177948B2. Автор: 徹 渡辺,良文 高橋,秀樹 田中,義和 木戸,徹 後藤,伸司 関,豊 藤野,敏行 出口,公一 服部,勉 萩原,幸司 山崎,規安 山森,陽夫 磯,治 川上,幹男 平井,儀徳 塩屋,康昭 竹之内. Владелец: Tokyo Metropolitan Sewerage Service Corp. Дата публикации: 2008-11-05.

Magnetic tunnel junction device, free layer structure used for magnetic tunnel junction device, and magnetic memory including same

Номер патента: TW201106351A. Автор: Jian-Huei Li,Mei-Yi Lin,Gong Chern. Владелец: Nat Univ Chung Cheng. Дата публикации: 2011-02-16.

METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING SPIN-ORBIT INTERACTION BASED SWITCHING AND MEMORIES UTILIZING THE MAGNETIC TUNNELING JUNCTION

Номер патента: US20140056060A1. Автор: Apalkov Dmytro,Khvalkovskiy Alexey Vasilyevitch. Владелец: . Дата публикации: 2014-02-27.

MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER

Номер патента: US20120241878A1. Автор: . Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-09-27.

CONTROL OF TUNNELING JUNCTION IN A HETERO TUNNEL FIELD EFFECT TRANSISTOR

Номер патента: US20120298961A1. Автор: Verhulst Anne S.,IACOPI Francesca,Sibaja-Hernandez Arturo. Владелец: IMEC. Дата публикации: 2012-11-29.

MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE

Номер патента: US20130001721A1. Автор: Chen Yonghua,Peng Xilin,Nikolaev Konstantin,Pokhil Taras,Sapozhnikov Victor. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2013-01-03.

MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER

Номер патента: US20130005052A1. Автор: Worledge Daniel C.,Hu Guohan,Nowak Janusz J.,Trouilloud Philip L.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-01-03.

Spin Torque Transfer Magnetic Tunnel Junction Fabricated with a Composite Tunneling Barrier Layer

Номер патента: US20130175644A1. Автор: Horng Cheng T.,Tong Ru-Ying. Владелец: HEADWAY TECHNOLOGIES, INC.. Дата публикации: 2013-07-11.

Tunnel junction segment and tunnel connection method

Номер патента: JP2989412B2. Автор: 修身 橋本,彰男 志関,徹 谷口,秀幸 小林,誠 請川,雅弘 中川,幸司 多田,裕次 舘川,雅一 福若,高志 平本. Владелец: Toda Corp. Дата публикации: 1999-12-13.

Manufacturing method of multilayer-tunneling-junction three-dimensional tunneling field effect transistor

Номер патента: CN105990409A. Автор: 王伟,刘明,王明华,樊晓华. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2016-10-05.

FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING THE SAME

Номер патента: US20120112299A1. Автор: . Владелец: NATIONAL INSTITUTE FOR MATERIALS SCIENCE. Дата публикации: 2012-05-10.

TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS

Номер патента: US20120125392A1. Автор: Law Daniel C.,Woo Robyn L.,BOISVERT Joseph Charles. Владелец: The Boeing Company. Дата публикации: 2012-05-24.

TUNNEL JUNCTION VIA

Номер патента: US20120133050A1. Автор: . Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-05-31.

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) Magnetic Tunnel Junctions

Номер патента: US20120135273A1. Автор: Jan Guenole,Horng Cheng T.,Tong Ru-Ying. Владелец: . Дата публикации: 2012-05-31.

Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction

Номер патента: US20120158349A1. Автор: Lueng Chiuming,Leung Cheukwing,Ding Juren,Ni Rongkwang,Lee Mankit. Владелец: SAE Magnetics (H.K.) Ltd.. Дата публикации: 2012-06-21.

METHOD AND APPARATUS FOR EVALUATING SUPERCONDUCTING TUNNEL JUNCTION DETECTOR NOISE VERSUS BIAS VOLTAGE

Номер патента: US20120166117A1. Автор: Warburton William K.,Harris Jackson T.. Владелец: XIA LLC. Дата публикации: 2012-06-28.

Temperature Sensor Based on Magnetic Tunneling Junction Device

Номер патента: US20120181651A1. Автор: . Владелец: NORTH CHINA UNIVERSITY OF TECHNOLOGY. Дата публикации: 2012-07-19.

METHOD FOR FABRICATING MAGNETIC TUNNEL JUNCTION

Номер патента: US20120187510A1. Автор: Jung Dong Ha,Jin Gyu An,Min Su Ryun. Владелец: . Дата публикации: 2012-07-26.

MAGNETIC TUNNEL JUNCTION AND METHOD FOR FABRICATING THE SAME

Номер патента: US20120217596A1. Автор: . Владелец: . Дата публикации: 2012-08-30.

MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT

Номер патента: US20120257447A1. Автор: Tian Wei,Wang Xiaobin,Dimitrov Dimitar V.,Lou Xiaohua,Zheng Yuankai,Wang Dexin. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2012-10-11.

METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES

Номер патента: US20120326253A1. Автор: Butler William H.. Владелец: . Дата публикации: 2012-12-27.

TANDEM SOLAR CELL WITH IMPROVED TUNNEL JUNCTION

Номер патента: US20130000706A1. Автор: Sadana Devendra K.,Abou-Kandil Ahmed,Hong Augustin J.,Kim Jeehwan,Fogel Keith E.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-01-03.

METHODS FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION STRUCTURE

Номер патента: US20130008867A1. Автор: . Владелец: . Дата публикации: 2013-01-10.

METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE

Номер патента: US20130062716A1. Автор: Li Xia. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2013-03-14.

METHOD AND DEVICE FOR ESTIMATING DAMAGE TO A MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT

Номер патента: US20130191048A1. Автор: Li Xia,Kang Seung H.,Chen Wei-Chuan. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2013-07-25.

MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES

Номер патента: US20140004625A1. Автор: Gaidis Michael C.,Annunziata Anthony J.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-01-02.

MULTI-LEVEL MEMORY CELL USING MULTIPLE MAGNETIC TUNNEL JUNCTIONS WITH VARYING MGO THICKNESS

Номер патента: US20140050019A1. Автор: Kang Seung H.,Kim Taehyun,Kim Jung Pill,Lee Kangho. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-02-20.

MAGNETIC TUNNEL JUNCTION BASED RANDOM NUMBER GENERATOR

Номер патента: US20140108478A1. Автор: Zhu Xiaochun,Kang Seung H.,WU Wenqing,Madala Raghu Sagar,Kim Taehyun,Kim Jung Pill,Lee Kangho,Jacobson David M.. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-04-17.

Magnetic tunnel junction device and magnetic random access memory

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A displacement device for construction of bridge tunnel junction

Номер патента: CN216339072U. Автор: 张鹏,陈磊,罗鹏,白浪,张金福,杨军宏,穆垚岐,师翔宇. Владелец: Road and Bridge East China Engineering Co Ltd. Дата публикации: 2022-04-19.

Tuning circuits and superconducting integrated circuits using tunnel junction elements.

Номер патента: JP3820445B2. Автор: 佳徳 鵜澤,鎮 王. Владелец: National Institute of Information and Communications Technology. Дата публикации: 2006-09-13.

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