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Tunnel junction selector mram

Номер патента: US20210098530A1
Опубликовано: 01-04-2021
Автор(ы): Hon-Sum Philip Wong, Mauricio Manfrini
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Номер патента: US20120305060A1. Автор: Fu Jianming,Xu Zheng,Yu Chentao,Heng Jiunn Benjamin. Владелец: SILEVO, INC.. Дата публикации: 2012-12-06.

SYSTEMS AND METHODS FOR DIRECT COMMUNICATION BETWEEN MAGNETIC TUNNEL JUNCTIONS

Номер патента: US20120314489A1. Автор: Yao Xiaofeng,Wang Jian-Ping,Lilja David J.,Lyle Andrew P.,Patil Shruti R.,Harms Jonathan D.. Владелец: Regents of the University of Minnesota. Дата публикации: 2012-12-13.

TANDEM SOLAR CELL WITH IMPROVED TUNNEL JUNCTION

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ELECTRON BEAM SCULPTING OF TUNNELING JUNCTION FOR NANOPORE DNA SEQUENCING

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METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES

Номер патента: US20120326253A1. Автор: Butler William H.. Владелец: . Дата публикации: 2012-12-27.

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MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER

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METHODS FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION STRUCTURE

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SEMICONDUCTOR FABRICATING DEVICE AND METHOD FOR DRIVING THE SAME, AND METHOD FOR FABRICATING MAGNETIC TUNNEL JUNCTION USING THE SAME

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METHOD FOR FABRICATING MAGNETIC TUNNEL JUNCTION

Номер патента: US20130037894A1. Автор: CHUNG Su Ock. Владелец: . Дата публикации: 2013-02-14.

MAGNETIC TUNNEL JUNCTION AND SPIN TRANSFER TORQUE RANDOM ACCESS MEMORY HAVING THE SAME

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MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES

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METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE

Номер патента: US20130062716A1. Автор: Li Xia. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2013-03-14.

MULTI-BIT SPIN-MOMENTUM-TRANSFER MAGNETORESISTENCE RANDOM ACCESS MEMORY WITH SINGLE MAGNETIC-TUNNEL-JUNCTION STACK

Номер патента: US20130094282A1. Автор: Lu Yu,Hu Guohan. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-04-18.

MAGNETIC TUNNEL JUNCTION DEVICES HAVING MAGNETIC LAYERS FORMED ON COMPOSITE, OBLIQUELY DEPOSITED SEED LAYERS

Номер патента: US20130119495A1. Автор: Worledge Daniel C.,Vetrò Francesco A.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-05-16.

METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION

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METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING

Номер патента: US20130154035A1. Автор: Tang Xueti,Apalkov Dmytro,Nikitin Vladimir,Krounbi Mohamad Towfik. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-06-20.

MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING SAME

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TOP-PINNED MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION

Номер патента: US20130207209A1. Автор: Shen Kuei-Hung,Yang Shan-Yi,Wang Yung-Hung,Wang Ding-Yeong. Владелец: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE. Дата публикации: 2013-08-15.

Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect Device and Spintronics Device Utilizing Same

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Magnetic Tunnel Junction (MTJ) Structure in Magnetic Random Access Memory

Номер патента: US20130228882A1. Автор: Yu Chwen,Cheng Kai-Wen,CHEN Chih-Ming. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-09-05.

DIFFERENTIAL MRAM STRUCTURE WITH RELATIVELY REVERSED MAGNETIC TUNNEL JUNCTION ELEMENTS ENABLING WRITING USING SAME POLARITY CURRENT

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TUNNELING-JUNCTION SOLAR CELL WITH SHALLOW COUNTER DOPING LAYER IN THE SUBSTRATE

Номер патента: US20130298973A1. Автор: Fu Jianming,Xu Zheng,Heng Jiunn Benjamin,Xie Zhigang. Владелец: SILEVO, INC.. Дата публикации: 2013-11-14.

MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES

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MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES

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MULTI-LEVEL MEMORY CELL USING MULTIPLE MAGNETIC TUNNEL JUNCTIONS WITH VARYING MGO THICKNESS

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MAGNETIC TUNNEL JUNCTION BASED RANDOM NUMBER GENERATOR

Номер патента: US20140108478A1. Автор: Zhu Xiaochun,Kang Seung H.,WU Wenqing,Madala Raghu Sagar,Kim Taehyun,Kim Jung Pill,Lee Kangho,Jacobson David M.. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2014-04-17.

MULTIPLE BIT NONVOLATILE MEMORY BASED ON CURRENT INDUCED DOMAIN WALL MOTION IN A NANOWIRE MAGNETIC TUNNEL JUNCTION

Номер патента: US20140126280A1. Автор: Gaidis Michael C.,Gallagher William,Annunziata Anthony J.,THOMAS LUC. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-05-08.

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