Reducing or avoiding metal deposition from etching magnetic tunnel junction (mtj) devices, including magnetic random access memory (mram) devices
Номер патента: EP3472875A1
Опубликовано: 24-04-2019
Автор(ы): Chando Park, Jimmy Jianan KAN, Seung Hyuk KANG
Принадлежит: Qualcomm Inc
Опубликовано: 24-04-2019
Автор(ы): Chando Park, Jimmy Jianan KAN, Seung Hyuk KANG
Принадлежит: Qualcomm Inc
Реферат: Aspects disclosed include reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices. In one example, a width of a bottom electrode of an MTJ device is provided to be less than a width of the MTJ stack of the MTJ device. In this manner, etching of the bottom electrode may be reduced or avoided to reduce or avoid metal redeposition as a result of over-etching the MTJ device to avoid horizontal shorts between an adjacent device(s). In another example, a seed layer is embedded in a bottom electrode of the MTJ device. In this manner, the MTJ stack is reduced in height to reduce or avoid metal redeposition as a result of over-etching the MTJ device. In another example, an MTJ device includes an embedded seed layer in a bottom electrode which also has a width less than a width of the MTJ stack.
Reducing or avoiding metal deposition from etching magnetic tunnel junction (mtj) devices, including magnetic random access memory (mram) devices
Номер патента: WO2018026529A1. Автор: Seung Hyuk KANG,Jimmy Jianan KAN,Chando Park. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2018-02-08.