다이-대-다이 상호연결을 위한 브리지 모듈을 가지는 반도체 어셈블리
The disclosure content generally examples of semiconductor devices and in particular, to die - - die (die-a to a-die) having a assembly interconnecting bridge module (bridge module) are disclosed. Integrated circuit (IC) architectures integrated single package a number of disparate functions to development of priority order, wherein each IC die (die) or CSP (chip non-scale package) by separate function is carried out. Such architecture is sometimes SiP (system provided in a non-package) be referred to as substrate. One type of architecture includes a number of IC die is mounted on the interposer (interposer) of SiP, axially mounted to gun low price package then following the other. In addition TSV interposer (through a-silicon via) are referred to as the TDV (through a-die via) include, TVD on both upper and lower surfaces are connected to metallization layers. Enable a number of IC die between a metalization layer, and a plurality of IC die are used to convey electrical signals between confronts each. This type of SiP architecture is sometimes 2. 5 Dimensional (2. 5D) are referred. However, the package is SiP 2. 5D the use of architecture, are designed separate inter gun low price, since a circuit number tank and be, significantly enhance costs. Die - to - die interconnecting bridge module having the assembly for number [...] techniques are described. In one embodiment, the semiconductor assembly number 1 IC die, number 2 IC die, and bridge module comprises. Number 1 IC die on its top side, and a plurality of interconnections between the number 1 of a plurality of interconnections between the contacts during contacts comprise a number 1 (inter-a die). Number 2 IC die on its top side, and a plurality of interconnections between the contacts of a plurality of interconnections between the contacts during number 2 comprise a number 2. Number 1 and number 2 interconnections disposed thereon between the bridge module interconnections. Bridge module includes its own top side onto the bridge interconnections - bridge interconnections between the mechanical and electrical contacts coupled - a plurality of roof bows, and on its top side for routing signals between number 1 IC number 2 IC disposed on one or more includes the layer of electrically conductive interconnects. A plurality of interconnections extending above bridge at a front surface of side which can not. Selectively, the number 2 IC die bonding and number 1 IC die semiconductor assembly, the bridge module further comprises bonding each number 1 IC die and number 2 IC die can be epoxy. Selectively, the number 1 IC die semiconductor assembly, number 2 IC die, and bridge module for encapsulating molding compound can be. Selectively, bridge module ceramic, organic, or can be a semiconductor substrate. Selectively, the bridge module comprising a semiconductor substrate having an active circuit can be. In another example, IC package includes a package substrate, number 1 IC die, number 2 IC die, and bridge module comprises. Number 1 IC die on its top side, and a plurality of interconnections between the contacts of a plurality of interconnections between the contacts during number 1 and number 1, number 1 top side coupled electrically and mechanically to a package board interconnections. Number 2 IC die on its top side, and a plurality of interconnections between the contacts of a plurality of interconnections between the contacts during number 2 and number 2, number 2 interconnections electrically and mechanically coupled to a package board top side. Number 1 and number 2 the bridge module disposed between the interconnections and interconnections, bridge at a front surface of side spaced away from the package substrate. Bridge module includes its own top side bridges interconnections - bridge interconnections between the mechanical and electrical contacts coupled - a plurality of roof bows, and on its top side for routing signals between number 1 IC number 2 IC disposed on one or more includes the layer of electrically conductive interconnects. Selectively, IC package number 2 IC die bonding and number 1 IC die, each die number 1 IC die and number 2 IC and bridge module further comprises epoxy bonding can be. Selectively, IC package number 1 IC die, number 2 IC die, and bridge module for encapsulating molding compound can be. Selectively, IC package number 1 IC die, number 2 IC die, and bridge module disposed between the uppermost portion of confronts each side further comprises underfill (underfill) can be. Optionally, the backside of the package substrate comprising a plurality of interconnections can be on its own. Selectively, it became work can be pre - number to a package board bridge module is separated from the substrate. Selectively, bridge module can be a semiconductor substrate including active circuit. In another example, semiconductor assembly is a bath method number: voids and cavities disposed on the carrier substrate has a layer of release (release) forming; the step of placing the bridge module in the cavity of the one cavity - bridge module includes its own top side onto the bridge interconnects disposed on its top side and one or more layers of electrically conductive interconnects including -; number 1 integrated circuit (IC) die number 1 interconnects to integrated circuit (IC) die number 1 are arranged in plurality of cavities on a carrier substrate placing; number 2 number 2 IC die interconnects are arranged in placing the plurality of cavities to number 2 IC die on a carrier substrate; number 2 IC die number 1 IC die and a bridge interconnections between the contacts coupling step; and a release layer flush release number 1 IC die, number 2 IC die, and bridge module including a semiconductor assembly comprising the following steps separate from the carrier substrate. Selectively, the release layer be flush release method number 1 IC die, number 2 IC die and bridge module including a semiconductor assembly can further include the step of separated from the base substrate carrier. Optionally, before the separation method, number 2 IC die bonding and number 1 IC die, each die number 1 IC die and number 2 IC and bridge module further comprises forming a bonding epoxy can be. Selectively, a molding compound before the separation method number 1 IC die, can further include the step of number 2 IC die and bridge module for encapsulating. Selectively, bridge module ceramic, organic, or can be a semiconductor substrate. Selectively, the bridge module comprising a semiconductor substrate having an active circuit can be. Selectively, coupling a metal bridge interconnects between contacts die semiconductor assembly for heating and soldering a reflow (reflow) comprising the following steps. Selectively, coupling step of bonding between die bonding contacts using a process the bridges interconnect comprising the following steps. These and other aspects include reference to understand the description then can be. It will feature are provided and formed to, over a short abstract a more specific description is exemplary implementations can be done via the reference and, some are attached drawing illustrated substrate. However, conventional implementations are exemplary only and therefore its attached drawing example relayed do not become confused should have been taken into account number range of interest. As shown in the schematic cross-section diagram of a repeller (IC) example 1a also are disclosed. In another example of a schematic cross-section diagram through the IC package 1b is also are disclosed. Also 2a - 2c also relates to a method for cross-section schematic diagrams examples of process for tank-sound assembly number are disclosed. 3A - 3b also includes a number of assembly process for tank 1a also relates to a method for cross-section examples of schematic diagrams also are disclosed. 4A - 4b also includes a number of assembly process for tank 1b also relates to a method for cross-section examples of schematic diagrams also are disclosed. 5A - 5b is also separated from the semiconductor assembly such that the plane view of a carrier substrate also are disclosed. As shown in the schematic cross section diagrams examples 6a - 6b also includes a IC die also are disclosed. Figure 7 shows a schematic cross-section of a bridge module configured to IC die also interconnecting diagram when for example are disclosed. Figure 8 shows a high pressure liquid coolant also semiconductor assembly depicting a flow number for examples of method are disclosed. Hereinafter for understanding order, where possible, the same reference numbers common to drawing the same elements used to specify. In one exemplary elements advantageously can be integrated into other examples are taken into account. Various characteristics of the reference drawing is then described. [...] drawing are shown or not shown may be the same structures or functions that can be drawing elements over all the same reference number is treated should the genes of interest. Drawing description hereinafter are intended only for so should the features of interest. Drawing of the invention of the invention the claimed are complete annunciate or the claimed range is not intended as number one. In addition, in an illustrated in the embodiment shown includes all aspects or advantages no disclosed. In the embodiment described with particular advantage in the embodiment has the number to one aspect or the sure, not so illustrated, without so explicitly described in the embodiment can be in any other embodiment. Die - to - die interconnecting bridge module having the assembly for number [...] techniques are described. In one embodiment, an integrated circuit (IC) die semiconductor assembly configured to bridge module comprises a pair of electrically connected. Bridge module is mechanical and electrical contacts configured to coupled between the IC die comprising the bridge interconnects. IC die and bridge module is mechanically secured using epoxy or molding compound. Can be formed by using a semiconductor assembly comprises a carrier substrate and then are separated from the carrier substrate SiP package substrate, PCB (printed circuit board) can be there. Electrical connections between the IC die and thus support the bridge module IC package substrate/PCB need a stand-alone number between interposer substrate. Bridge module to a package board/PCB from apart from each other. The, coefficient of thermal expansion (CTE) to a package board bridge module/PCB CTE mismatch between the lamp and module can be configured without a wanted shape. Small semiconductor assembly pre - number and bridge module, package substrate/PCB, and IC die - not on to sequential build up (build a-up). In addition, the semiconductor assembly it became work pre - number, organic substrate, such as a package substrate or PCB complex die buried bridge die bury steps involved avoiding other. The, not on any particular package substrate or PCB to pre - number it became work semiconductor assembly. Also 1a and a repeller (IC) package (100A) relates to a method for coarse to restore each examples of cross-sectional drawing. IC package (100A) comprises a plurality of IC die (for example, number 1 IC die (104A) and number 2 IC die (104B) is shown by) a package substrate support (102) comprises. 2 E.g. clarity of IC die but is only shown, techniques are more than 2 described herein can be used with a semiconductor assembly having the same to IC-case to one skilled in the will. Package substrate (102) collectively referred to as "IC die (104)" mounted IC die are disclosed. Package substrate (102) is a plurality of interconnections in one side (106) coupled to, and opposite sides of number 1 IC die (104A) on number 2 IC die (104B) are retained. A plurality of interconnections (106) example IC package (100A) PCB (printed circuit board) and the like can be adapted to mount comprising a plurality of solder balls. IC die (104) comprises each of the "top side" and "backside". IC die (104) each of the, top side of package substrate (102) in such a way that, package substrate (102) to "flip - chip (flip-a chip)" consists of mounting. IC die (104) has a top side opposite to the backside of each side disclosed. IC die (104A) comprises a plurality of interconnections ("interconnections (108A)") coupled to comprise a top side. Interconnections (108A) are the solder bump (bump) (e.g., collapse chip connection (C4) number [...] bumps) can be like. Interconnections (108A) the IC die (104A) package substrate (102) decodes mechanical and electrical coupling. IC die (104A) on similarly, IC die (104B) comprises a plurality of interconnections ("interconnections (108B)") coupled to comprise a top side. Interconnections (108B) solder bumps (e.g., C4 bumps) can be like. Interconnections (108B) the IC die (104B) package substrate (102) decodes mechanical and electrical coupling. Interconnections (108A) and interconnections (108B) collectively comprise a plurality of interconnections ("interconnections (108)"). IC package (100A) is IC die (104A) on IC die (104B) electrically coupling configured to bridge module (110) results are. For example, bridge module (110) is IC die (104A) on IC die (104B) can be between supporting delivery of electrical signals. Bridge module (110) is interconnections (108A) and interconnections (108B) disposed thereon between. Bridge module (110) includes a plurality of bridge interconnections ("bridge interconnections (112)") coupled to comprise a top side. Bridge module (110) "top side" of the IC die (104) to top side facing side disclosed. Bridge module (110) "backside" of this top side facing the side disclosed. In one embodiment, bridge module (110) to the backside of the IC die (104) of interconnections (108) extends beyond the height of not. I.e., bridge module (110) to a package board (102) spaced from the. In another example, bridge module (110) of the backside of the thrust to a package board (102) but physically contact, bridge module (110) of the backside of the thrust to a package board (102) is not electrically connected. Bridge module (110) substrate, such as ceramic substrate, organic substrate or metallized layers can be formed on a semiconductor substrate. In one embodiment, bridge module (110) comprises a solid state circuit formed on the semiconductor substrate. Bridge interconnections (112) the IC die (104A) between the contacts of number 1 (also shown in 6a by) are connected mechanically coupled to the set of bridge interconnections ("bridge interconnections (112A)") and IC die (104B) between the contacts (6b is also shown) of number 2 are connected mechanically coupled to the set of bridge interconnections comprises ("bridge interconnections (112B)"). In one embodiment, bridge interconnections (112) the IC die (104A) and IC die (104B) (e.g., C4 bumps) to be soldered between the contacts each comprise solder bumps. In another example, bridge interconnections (112) the IC die (104A) and IC die (104B) bonded to each die-contacts (e.g., diffusion bonding, pressure tank lining (joining), thermal compression welding, each generally herein referred to as "bonding" by) metal contacts comprise. Such embodiment, bridge interconnections (112) aluminum, copper, gold or the like can be. IC die (104A), IC die (104B) and bridge module (110) lead (150A) and form. In one example shown, semiconductor assembly (150A) is epoxy or similar - types of bonding compound comprises mechanical support. For example, epoxy (114) is IC die (104A) IC a die (104B) for bonding the IC die (104A) on IC die (104B) disposed thereon between. Epoxy (114) is in addition bridge module (110) the IC die (104A) and IC die (104B) for bonding each of the bridge module (110) and IC die (104A) and IC die (104B) between each of disposed thereon. IC package (100A) is a semiconductor assembly (150A) package substrate (102) disposed between the underfill (116) comprises. Underfill (116) can be used as underfill materials include a in the art various well known. 1B also includes a IC package (100B) in another example of a relates to a method for coarse to restore each cross-sectional drawing. Also 1a elements with the same or similar reference numbers the same elements 1b hole are designated as described above comprise. In this example, semiconductor assembly (150B) is IC die (104A), IC die (104B) and bridge module (110) comprises. Although only 2 of IC die but shown e.g., semiconductor assembly (150B) other IC die 2 can be more than examples. Semiconductor assembly (150B) is, epoxy (114) rather than, molding compound (118) in relation to the assembly used for supporting semiconductor assembly (150A) transformational hereinafter disclosed. Molding compound (118) the IC die (104A), IC die (104B) and bridge module (110) can be encapsulating. Molding compound (118) is known in the art such purposes any type of suitable material, such as epoxy molding compound can be. Also 2a - 2c also includes a semiconductor assembly, such as a semiconductor assembly (150A) or semiconductor assembly (150B) examples of a process for bath through the coarse cross-sectional drawing number are disclosed. 1A - 1b 2a - 2c with the same or similar elements may also hole are also designated as reference number the same elements are disclosed. Also as shown in 2a, carrier substrate (202) bridge module cavity (208) forming cavities therein (206) for interconnecting the processing with each other. Carrier substrate (202) can be for example silicon substrate. Voids (206 and 208) - can be formed using well known semiconductor processing techniques. Release layer (204) cavities (206 and 208) including internal, carrier substrate (202) is deposited above. Release layer (204) carrier substrate (202) suitable for temporarily attaching the carrier substrate (202) can be release from which can be any type of material. Also as shown in 2b, bridge module (110) bridge module cavity (208) disposed thereon to. As also shown in 2c, IC die (104A) is, interconnections (108A) the carrier substrate (202) respective cavities (206) are arranged aligned with, carrier substrate (202) is arranged on the. IC die (104B) is, interconnections (108B) the carrier substrate (202) respective cavities (206) are arranged aligned with, carrier substrate (202) is arranged on the. The, voids (206) the IC die (104A) of interconnections (108A) and IC die (104B) of interconnections (108B) receiving the layout of the carrier in a pattern that substrate (202) in a transfer liquid. Voids (206) is interconnections (108) are formed with receiving the height of depth. Voids (206) is, IC die (104B) of bridge interconnections between the contacts (also shown by 6a) (112a) and aligned with, and number 2 IC die (104B) of bridge interconnections between the contacts (6b is also shown) (112B) further configured to consists of aligned with. Bridge cavity (208) the width of the bridge module (110) to accommodate the width of the consists of. The, bridge cavity (208) the width of the bridge module (110) at least equal to the width of 2000. Bridge cavity (208) the depth of, bridge interconnections (112) the IC die (104A) and IC die (104B) of contact between the contacts consists of. Also 3a - 3b also includes a semiconductor assembly (150A) examples of a process for bath through the coarse cross-sectional drawing number are disclosed. 3A - 3b also are shown in the process steps shown in 2a - 2c also after process steps also are also carried out. Also 1a 2a - 2c and 3a - 3b with the same or similar elements are also the same elements designated as reference number hole are also are disclosed. As shown in 3a also, epoxy (114) or other type of bonding compound is IC die (104A) on IC die (104B) between the deposition process. Epoxy (114) includes a bridge module (110) bridge interconnections (112) between the bridge module (110) and IC die (104A) and IC die (104B) spread between each vehicle from the outside. Epoxy (114) is IC die (104A) on IC die (104B) to fill in the space between 2000. Epoxy (114) is IC die (104A) on IC die (104B) the entire space between, or less than the entire space (e.g., epoxy (114) the height of the IC die (104A, 104B) can be less than the height of the negative) can be filling. Epoxy (114) is in addition bridge module (110) and carrier substrate (202) between can be unfolded. Epoxy (114) is a semiconductor assembly (150A) [...] to pH for a support number. As shown in 3b also, semiconductor assembly (150A) has a release layer (204) flush the release carrier substrate (202) from apart from each other. Semiconductor assembly (150A) is, epoxy (114) is cured can be then isolated. Then, separated semiconductor assembly (150A) has a package substrate, PCB can be there. A carrier substrate is also 5a (202) after separation from semiconductor assembly (150A) plane view of are disclosed. Bridge module (110) a portion of the bridge interconnections (112) shown is cut to substrate. As shown, epoxy (114) is IC die (104A) on IC die (104B) between, the bridge module (110) bridge interconnections (112) around the bridge module (110) and IC die (104A and 104B) between each of disposed thereon. Also 4a - 4b also includes a semiconductor assembly (150B) examples of a process for bath through the coarse cross-sectional drawing number are disclosed. 4A - 4b also are shown in the process steps shown in 2a - 2c also after process steps also are also carried out. Also 2a - 2c 1b and also with the same or similar elements 4a - hole are also the same elements also 4b are designated as reference number. Also as shown in 4a, molding compound (118) the IC die (104A), IC die (104B), and bridge module (110) to encapsulate the lower substrate (202) is deposited on the substrate. Molding compound (118) the IC die (104A and 104B) and encloses the outer edge of IC die (104A) on IC die (104B) disposed thereon between. Molding compound (118) is in addition bridge interconnections (112) between the bridge module (110) and IC die (104A and 104B) between each of spread of vehicle from the outside. Molding compound (118) is in addition bridge module (110) and carrier substrate (202) between can be unfolded. Lead molding compound (150B) [...] to pH for a support number. Also as shown in 4b, semiconductor assembly (150B) has a release layer (204) flush the release carrier substrate (202) from apart from each other. Semiconductor assembly (150B) is, molding compound (118) can be cured is then isolated. Then, separated semiconductor assembly (150B) has a package substrate, PCB can be there. A carrier substrate is also 5b (202) after separation from semiconductor assembly (150B) plane view of are disclosed. Bridge module (110) a portion of the bridge interconnections (112) shown is cut to substrate. As shown, molding compound (118) the IC die (104A and 104B) surrounding the IC die (104A) on IC die (104B) disposed thereon between. Molding compound (118) is in addition bridge module (110) bridge interconnections (112) around the bridge module (110) and IC die (104A and 104B) between each disposed thereon. IC die is also 6a (104A) relates to a method for coarse to restore each examples of cross-sectional drawing. IC die (104A) includes a solid state circuit (604A) semiconductor substrate inside (602A) comprises. Electrically conductive interconnects (606A) includes a substrate (602A) on solid state circuit (604A) formed on. Electrically conductive interconnects (606A) is of conductive material for the layers of the dielectric material layers and comprising alternating layers. Interconnections (108A) is electrically conductive interconnects (606A) coupled to. Electrically conductive interconnects (606A) in addition is between the contacts (608A) comprises. Between the contacts (608A) bridge module (110) bridge interconnections (112A) and coupling consists of to. IC die is also 6b (104B) relates to a method for coarse to restore each examples of cross-sectional drawing. IC die (104B) is IC die (104A) on similarly consists of. IC die (104B) includes a solid state circuit (604B) semiconductor substrate inside (602B) comprises. Electrically conductive interconnects (606B) includes a substrate (602B) on solid state circuit (604B) formed on. Electrically conductive interconnects (606B) is of conductive material for the layers of the dielectric material layers and comprising alternating layers. Interconnections (108B) is electrically conductive interconnects (606B) coupled to. Electrically conductive interconnects (606B) in addition is between the contacts (608B) comprises. Between the contacts (608B) bridge module (110) bridge interconnections (112B) and coupling consists of to. Figure 7 shows a also bridge module (110) through the coarse to restore each examples of cross-section. Bridge module (110) is electrically conductive interconnects (706) substrate thereon (702) comprises. Electrically conductive interconnects (706) is of conductive material for the layers of the dielectric material layers and comprising alternating layers. Bridge interconnections (112) is electrically conductive interconnects (706) coupled to. In one embodiment, substrate (702) comprises ceramic or organic substrate. In another example, substrate (702) comprises a semiconductor substrate. In some instances include, substrate (702) solid state circuit (704) in which comprises a semiconductor substrate. Figure 8 shows a high pressure liquid coolant also method for semiconductor assembly number (800) depicting a examples of flow are disclosed. Method (800) step (802) begins in, wherein the carrier substrate has a layer and release cavities formed (2a also). The carrier can be e.g. silicon substrate. Cavity are of the existing method can be formed by using silicon processing techniques. Step (804) in, bridge module comprises a carrier substrate bridge module cavity disposed thereon (Figure 2b). Bridge module ceramic, organic, be a or the semiconductor substrate. Bridge module pre - number is small, can be formed on various metallization layers. Bridge module includes the semiconductor substrate, the bridge module, metal locking ring formed therein for electrically coupling circuit can be enabled. Bridge module (804) using semiconductor processing techniques of the existing method is less number can be disclosed. Step (806) in, number 1 IC die having interconnections to each cavity of a carrier substrate disposed thereon (also 2c) on a carrier substrate. Step (808) in, number 2 IC die having interconnections to each cavity of a carrier substrate disposed thereon (also 2c) on a carrier substrate. IC die each have a pre - number and may be small, and the U1 can be formed on the activation circuit. Portions of the top metal layer, interconnections can be exposed as bond pads is attached. Interconnects (e.g., C4 bumps) comprising e.g. solder interconnections can be. Number 1 and number 2 IC die using semiconductor processing techniques of the existing method small number can be disclosed. Step (810) in, number 1 and number 2 IC die coupled between the contacts on the outside of the bridge module on bridge interconnections (also also 3a or 4a). In one embodiment, bridge interconnects are solder bumps between the IC die (e.g., C4 bumps) to be soldered contacts each comprise a. In another example, each of the interconnections between the contacts and a second insulating bridge IC die (e.g., diffusion bonding, pressure tank lining, bonding welding, each generally herein referred to as "bonding" by) metal contacts comprise. Such embodiment, bridge interconnects can comprise aluminum, copper, gold or the like can be. Selective step (811) in, number 1 IC die, number 2 IC die and bridge die using bonding or epoxy encapsulated in a molding compound with each other. Step (812) in, semiconductor assembly comprises a carrier substrate from separated therefrom (also 3b or 4b also). To the aforementioned specific examples but, in the device of the present invention examples and an additional other can be made without deviating from the basic, and this range determined by the following claim. In one example, a semiconductor assembly comprises a first IC die, a second IC die, and a bridge module. The first IC die includes, on a top side thereof, first interconnects of a plurality of interconnects and first inter-die contacts of a plurality of inter-die contacts. The second IC die includes, on a top side thereof, second interconnects of the plurality of interconnects and second inter-die contacts of the plurality of inter-die contracts. The bridge module is disposed between the first interconnects and the second interconnects and includes bridge interconnects on a top side thereof, the bridge interconnects mechanically and electrically coupled to the plurality of inter-die contacts, and layer(s) of conductive interconnect disposed on the top side thereof to route signals between the first IC and the second IC. A back side of the bridge module does not extend beyond a height of the plurality of interconnects. As a semiconductor assembly, its top on one side thereof, a plurality of interconnections between the substrate and a plurality of interconnections of number 1 (inter-a die) integrated circuit (IC) die having number 1 number 1 of contacts between the contacts; its top on one side thereof, said one of said plurality of interconnections and interconnections between the contacts during number 2 number 2 number 2 IC die having a plurality of die contacted; and said number 1 interconnections and said number 2 interconnections disposed between bridge module (bridge module) and, said bridge module is: - said bridge interconnects said uppermost portion of said bridge module on the lower side in bridge interconnections between the contacts are mechanically and electrically coupling a plurality of roof bows -; and said number 1 IC on said top side of said bridge module configured to routing signals between said number 2 IC disposed on one or more layers of electrically conductive interconnects, said bridge module of said plurality of interconnections that does not extend above the backside of connectors, semiconductor assembly. According to Claim 1, said number 2 IC die bonding and said number 1 IC die, and said bridge module further including each said number 1 IC die and said number 2 IC die bonding epoxy, semiconductor assembly. According to Claim 1 or Claim 2, said number 1 IC die, said number 2 IC die, and said bridge module for encapsulating molding compound including, semiconductor assembly. According to one of Claim 1 to Claim 3, said bridge module ceramic, organic, or semiconductor substrate including, semiconductor assembly. According to one of Claim 1 to Claim 4, active circuit including said bridge module including a semiconductor substrate, semiconductor assembly. Integrated circuit (IC) packages, package substrate; its top on one side thereof, a plurality of interconnections between the contacts and a plurality of interconnections between the contacts during number 1 during integrated circuit (IC) die having number 1 number 1 - said number 1 interconnects are electrically and mechanically coupling said top side of the package substrate - roof bows; on one side of top, said one of said plurality of interconnections and interconnections between the plurality of die contacted during number 2 number 2 - said number 2 number 2 IC die having contacts said top side of the package substrate interconnects are electrically and mechanically coupling said roof bows -; and said number 1 interconnections and said number 2 interconnections disposed between the bridge module, said bridge at a front surface of said package substrate away from the spaced sides, said bridge module is:
The uppermost portion of said bridge module on said bridge interconnections between the contacts side bridge interconnections - said plurality of roof bows - mechanical and electrical coupling; and
Said number 1 IC on said top side of said bridge module configured to routing signals between said number 2 IC disposed on one or more layers of electrically conductive interconnects including, integrated circuit (IC) package. According to Claim 6, said number 2 IC die bonding and said number 1 IC die, and said bridge module further including each said number 1 IC die and said number 2 IC die bonding epoxy, integrated circuit (IC) package. According to Claim 6 or Claim 7, said number 1 IC die, said number 2 IC die, and said bridge module for encapsulating molding compound; and said number 1 IC die, said number 2 IC die, each of the package substrate disposed between said top side and said bridge module further including underfill (underfill), integrated circuit (IC) package. According to one of Claim 6 to Claim 8, said bridge module is separated from said package substrate pre - number it became work including substrate, integrated circuit (IC) package. According to one of Claim 6 to Claim 9, said bridge module including a semiconductor substrate including active circuit, integrated circuit (IC) package. A semiconductor assembly as number bath method, cavity and said cavity disposed on the carrier substrate has a layer of release (release) forming; the step of placing the bridge module cavity - said one of said cavity top side its bridge module disposed on its top side and on bridge interconnects electrically conductive interconnects by one or more of layers -; number 1 integrated circuit (IC) die integrated circuit (IC) die said number 1 to number 1 interconnects are arranged in said plurality of cavities on a carrier substrate placing; number 2 number 2 IC die are arranged in said plurality of cavities to interconnect said number 2 IC die on a carrier substrate placing; and said bridge said number 1 IC die and said number 2 IC chip packages including a coupling between the contacts of the die, semiconductor assembly a number bath method. According to Claim 11, said release layer flush release said number 1 IC die, said number 2 IC die and said bridge module including semiconductor assembly further including said carrier separated from the base substrate, a semiconductor assembly number bath method. According to Claim 12, before said separating, said number 2 IC die bonding and said number 1 IC die, each die forming said bridge module and said number 1 IC die and said number 2 IC bonding epoxy; and separating said molding compound before said number 1 IC die, said bridge module for encapsulating said number 2 IC die and further including, a semiconductor assembly number bath method. According to one of Claim 11 to Claim 13, said bridge module including active circuit including a semiconductor substrate, a semiconductor assembly number bath method. According to one of Claim 11 to Claim 14, said coupling step, said bridge chip packages between the contacts said heating and soldering a reflow (reflow) for said semiconductor assembly; said bridge between the contacts or ten compressions bonding process using said chip packages including bonding, semiconductor assembly a number bath method.
