Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure

01-05-2011 дата публикации

Номер:

TW201115719A

Автор: Andrew Waite, Andy Wei

Принадлежит: GlobalFoundries US Inc

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/8 H01L21/82 H01L21/823 H01L21/8238 H01L21/82380 H01L21/823807 H01L21/82384 H01L21/823842 H01L27 H01L27/H01L27/0 H01L27/06 H01L27/062 H01L27/0629 H01L28 H01L28/H01L28/2 H01L28/20 H01L29 H01L29/H01L29/6 H01L29/66 H01L29/665 H01L29/6654 H01L29/66545 H01L29/6656 H01L29/6659 H01L29/7 H01L29/78 H01L29/784 H01L29/7848

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/8 H01L21/82 H01L21/823 H01L21/8238 H01L21/82380 H01L21/823807 H01L29 H01L29/H01L29/1 H01L29/16 H01L29/165 H01L29/6 H01L29/66 H01L29/667 H01L29/6679 H01L29/66795

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