Composition and method for removing residue from chemical-mechanical planarization substrate

01-10-2019 дата публикации

Номер:

TWI673357B

Автор: 崔驥, 黃禾琳, HUANG HELIN, CUI JI, HUANG, HELIN, CUI, JI

Принадлежит: 美商卡博特微電子公司, CABOT MICROELECTRONICS CORP, CABOT MICROELECTRONICS CORPORATION

Контакты:

Номер заявки: 10-41-10611

Дата заявки: 27-11-2017

CPC - классификация

C C1 C11 C11D C11D1 C11D11 C11D11/C11D11/0 C11D11/00 C11D11/004 C11D11/0047 C11D17 C11D17/C11D17/0 C11D17/00 C11D17/001 C11D17/0013 C11D2 C11D21 C11D211 C11D2111 C11D2111/C11D2111/2 C11D2111/22 C11D3 C11D3/C11D3/0 C11D3/00 C11D3/004 C11D3/0047 C11D3/2 C11D3/20 C11D3/207 C11D3/2075 C11D3/22 C11D3/222 C11D3/4 C11D3/43 C11D3/48 C11D7 C11D7/C11D7/2 C11D7/26 C11D7/268 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/020 H01L21/0204 H01L21/02041 H01L21/0207 H01L21/02074 H01L21/3 H01L21/30 H01L21/304 H01L21/32 H01L21/321 H01L21/3212

IPC - классификация

C C1 C11 C11D C11D1 C11D11 C11D11/C11D11/0 C11D11/00 C11D3 C11D3/C11D3/4 C11D3/43 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/32 H01L21/321 H01L21/3212

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