Schemes for forming barrier layers for copper in interconnect structures

08-09-2015 дата публикации

Номер:

US9129968B2

Автор: Chen-Hua Yu, Hai-Ching Chen, Tien-I Bao

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/32 H01L21/322 H01L21/7 H01L21/76 H01L21/768 H01L21/7684 H01L21/76843 H01L21/76849 H01L21/7686 H01L21/76867 H01L21/7687 H01L21/76877 H01L21/7688 H01L21/76883 H01L23 H01L23/H01L23/5 H01L23/52 H01L23/528 H01L23/53 H01L23/532 H01L23/5323 H01L23/53238 H01L29 H01L292 H01L2924 H01L2924/H01L2924/0 H01L2924/00 H01L2924/000 H01L2924/0002

IPC - классификация

C C2 C23 C23C C23C1 C23C16 C23C16/C23C16/1 C23C16/14 H H0 H01 H01L H01L2 H01L23 H01L23/H01L23/5 H01L23/53 H01L23/532 H01L23/5329 H01L24 H01L24/H01L24/0 H01L24/05

Получить PDF