Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same

07-11-2023 дата публикации

Номер:

US11812661B2

Автор: Yun Heub Song

Принадлежит: SAMSUNG ELECTRONICS CO LTD

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

G G1 G11 G11C G11C1 G11C13 G11C13/G11C13/0 G11C13/00 G11C13/000 G11C13/0004 G11C13/003 G11C13/004 G11C13/006 G11C13/0069 G11C13/009 G11C13/0097 G11C2 G11C20 G11C201 G11C2013 G11C2013/G11C2013/0 G11C2013/00 G11C2013/005 G11C2013/008 G11C2013/009 G11C22 G11C221 G11C2213 G11C2213/G11C2213/5 G11C2213/51 G11C2213/54 G11C2213/7 G11C2213/71 G11C2213/72 G11C2213/76 H H1 H10 H10B H10B6 H10B63 H10B63/H10B63/2 H10B63/22 H10B63/24 H10B63/8 H10B63/84 H10B63/845 H10N H10N7 H10N70 H10N70/H10N70/0 H10N70/02 H10N70/023 H10N70/06 H10N70/063 H10N70/066 H10N70/2 H10N70/23 H10N70/231 H10N70/8 H10N70/82 H10N70/823 H10N70/826 H10N70/828 H10N70/84 H10N70/841 H10N70/8413 H10N70/88 H10N70/881 H10N70/882 H10N70/8828

IPC - классификация

G G1 G11 G11C G11C1 G11C11 G11C11/G11C11/3 G11C11/36 G11C13 G11C13/G11C13/0 G11C13/00 G11C13/003 G11C13/006 G11C13/0069

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