Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes

05-04-2022 дата публикации

Номер:

US0011296044B2

Автор: Guilian GAO, Javier A. Delacruz, Shaowu HUANG, LIANG WANG, Gaius Gillman Fountain, Jr., Rajesh Katkar, Cyprian Emeka Uzoh

Принадлежит: Invensas Bonding Technologies, Inc.

Контакты:

Номер заявки: 35-35-1655

Дата заявки: 28-08-2019

CPC - классификация

H H0 H01 H01L H01L2 H01L22 H01L222 H01L2224 H01L2224/H01L2224/0 H01L2224/02 H01L2224/022 H01L2224/0223 H01L2224/02233 H01L2224/0225 H01L2224/02255 H01L2224/05 H01L2224/055 H01L2224/0554 H01L2224/05546 H01L2224/0555 H01L2224/05557 H01L2224/06 H01L2224/061 H01L2224/0613 H01L2224/06131 H01L2224/0617 H01L2224/06177 H01L2224/08 H01L2224/080 H01L2224/0807 H01L2224/081 H01L2224/0814 H01L2224/08145 H01L2224/08147 H01L2224/09 H01L2224/095 H01L2224/0951 H01L2224/09517 H01L2224/8 H01L2224/80 H01L2224/800 H01L2224/8000 H01L2224/80007 H01L2224/8001 H01L2224/80011 H01L2224/80012 H01L2224/8003 H01L2224/80031 H01L2224/8004 H01L2224/80047 H01L2224/801 H01L2224/8013 H01L2224/803 H01L2224/8034 H01L2224/80345 H01L2224/8035 H01L2224/80357 H01L2224/8036 H01L2224/80365 H01L2224/808 H01L2224/8089 H01L2224/80895 H01L2224/80896 H01L2224/809 H01L2224/8090 H01L2224/80908 H01L2224/9 H01L2224/94 H01L24 H01L24/H01L24/0 H01L24/05 H01L24/06 H01L24/08 H01L24/7 H01L24/74 H01L24/8 H01L24/80 H01L24/89 H01L29 H01L292 H01L2924 H01L2924/H01L2924/3 H01L2924/35 H01L2924/351 H01L2924/3512

IPC - классификация

H H0 H01 H01L H01L2 H01L23 H01L23/H01L23/0 H01L23/00 H01L23/4 H01L23/48 H01L23/482 H01L23/4824 H01L23/488 H01L24 H01L24/H01L24/8 H01L24/81

Цитирование НПИ

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International Search Report and Written Opinion for PCT/US2019/048736, dated Aug. 29, 2019, 13 pages.
Ker, Ming-Dou et al., “Fully Process-Compatible Layout Design on Bond Pad to Improve Wire Bond Reliability in CMOS ICs,” IEEE Transactions on Components and Packaging Technologies, Jun. 2002, vol. 25, No. 2, pp. 309-316.
Moriceau, H. et al., “Overview of Recent Direct Wafer Bonding Advances and Applications”, Advances in Natural Sciences-Nanoscience and Nanotechnology, 2010, 12 pages.
Nakanishi, H. et al., “Studies on SiO2-SiO2 Bonding with Hydrofluoric Acid. Room Temperature and Low Stress Bonding Technique for MEMS,” Tech. Research Lab., 200, Elsevier Science S.A., 8 pages.
Oberhammer et al., “Sealing of Adhesive Bonded Devices on Wafer Level,” in Sensors and Actuators A, vol. 110, No. 1-3, pp. 407-412, Feb. 29, 2004, see pp. 407-412; and figures 1(a)-1(I), 6 pages.
Plobi et al., “Wafer Direct Bonding: Tailoring Adhesion Between Brittle Materials,” Materials Science and Engineering Review Journal, 1999, 88 pages.

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