Device-Manufacturing Scheme for Increasing the Density of Metal Patterns in Inter-Layer Dielectrics

13-02-2014 дата публикации

Номер:

US20140042557A1

Автор: Fang-Tsun Chu, Kvei-Feng Yen, Wei Yu Ma, yao-bin Wang

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/7 H01L21/76 H01L21/768 H01L21/7681 H01L21/76816 H01L21/7684 H01L21/7687 H01L21/76879 H01L23 H01L23/H01L23/5 H01L23/52 H01L23/522 H01L23/5226 H01L23/528 H01L27 H01L27/H01L27/0 H01L27/06 H01L27/062 H01L27/0629 H01L29 H01L29/H01L29/0 H01L29/06 H01L29/061 H01L29/0619 H01L292 H01L2924 H01L2924/H01L2924/0 H01L2924/00 H01L2924/000 H01L2924/0002

IPC - классификация

H H0 H01 H01L H01L2 H01L23 H01L23/H01L23/5 H01L23/52 H01L23/522 H01L23/5226 H01L29 H01L29/H01L29/8 H01L29/86 H01L29/868 H01L29/87 H01L29/872

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