Method to passivate conductive surfaces during semiconductor processing

13-03-2007 дата публикации

Номер:

US7188630B2

Автор: John C. Flake, Kevin E. Cooper, Saifi Usmani

Принадлежит: FREESCALE SEMICONDUCTOR INC

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

C C1 C11 C11D C11D1 C11D1/C11D1/1 C11D1/14 C11D1/146 C11D1/3 C11D1/34 C11D1/345 C11D1/6 C11D1/62 C11D1/7 C11D1/72 C11D11 C11D11/C11D11/0 C11D11/00 C11D11/004 C11D11/0047 C11D3 C11D3/C11D3/0 C11D3/00 C11D3/007 C11D3/0073 C11D3/2 C11D3/20 C11D3/200 C11D3/2003 C11D3/28 C11D3/3 C11D3/38 C11D3/382 C11D3/4 C11D3/43 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/020 H01L21/0207 H01L21/02074 H01L21/3 H01L21/30 H01L21/304 H01L21/32 H01L21/321 H01L21/3212 H01L21/7 H01L21/76 H01L21/768 H01L21/7684

IPC - классификация

C C1 C11 C11D C11D1 C11D1/C11D1/6 C11D1/62 C11D11 C11D11/C11D11/0 C11D11/00 C11D11/004 C11D11/0047 C11D3 C11D3/C11D3/2 C11D3/28

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