Method for forming barrier layer in semiconductor structure

20-07-2023 дата публикации

Номер:

WO2022160139A8

Автор: Ge Mao, Peng Zhou, Rui Song, Shuliang LV, YUAN Li

Принадлежит: Yangtze Memory Technologies Co., Ltd.

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

C C2 C23 C23C C23C1 C23C16 C23C16/C23C16/3 C23C16/30 C23C16/303 C23C16/4 C23C16/45 C23C16/455 C23C16/4552 C23C16/45527 C23C16/4554 C23C16/45546 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/2 H01L21/28 H01L21/285 H01L21/2856 H01L21/28562 H01L21/28568 H01L21/6 H01L21/67 H01L21/670 H01L21/6701 H01L21/67011 H01L21/7 H01L21/76 H01L21/768 H01L21/7682 H01L21/76829 H01L21/7684 H01L21/76843 H01L21/7685 H01L21/76856 H01L22 H01L222 H01L2221 H01L2221/H01L2221/1 H01L2221/10 H01L2221/105 H01L2221/1052 H01L29 H01L29/H01L29/4 H01L29/40 H01L29/401 H01L29/4011 H01L29/40117 H1 H10 H10B H10B4 H10B41 H10B41/H10B41/2 H10B41/27 H10B41/3 H10B41/35 H10B43 H10B43/H10B43/2 H10B43/27 H10B43/3 H10B43/35

IPC - классификация

C C2 C23 C23C C23C1 C23C16 C23C16/C23C16/3 C23C16/30 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/7 H01L21/76 H01L21/764 H01L27 H01L27/H01L27/1 H01L27/11 H01L27/115 H01L27/1158 H01L27/11582

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