УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ КРИСТАЛЛОВ КАРБИДА КРЕМНИЯ

Изобретение относится к технике для выращивания кристаллов карбида кремния на подложках. Устройство содержит камеру (1), расположенную вдоль оси, причем камера (1) включает отдельные средства (2, 3) для входа газов, содержащих углерод, и для газов, содержащих кремний, средство для поддерживания подложки (4), расположенное в первой концевой зоне (Z1) камеры, средство для выпуска отработанных газов (5), расположенное вблизи средства для поддерживания (4), и средство для нагревания, обеспечивающее нагревание камеры (1) до температуры свыше 1800°C; средство (2) для входа газов, содержащих кремний, которое размещено, сформировано и отрегулировано таким образом, что газы, содержащие кремний, входят во вторую концевую зону (Z2) камеры; средство (3) для входа газов, содержащих углерод, которое размещено, сформировано и отрегулировано таким образом, что углерод и кремний контактируют, по существу, в центральной зоне (ZC) камеры, удаленной и от концевой первой зоны (Z1) и от концевой второй зоны ...

КРИСТАЛЛ SiC ДИАМЕТРОМ 100 мм И СПОСОБ ЕГО ВЫРАЩИВАНИЯ НА ВНЕОСЕВОЙ ЗАТРАВКЕ

Изобретение относится к полупроводниковым материалам и технологии их получения и может быть использовано в электронике. Полупроводниковый кристалл карбида кремния содержит монокристаллическую затравочную часть 21 и монокристаллическую выращенную часть 22 на указанной затравочной части 21, при этом затравочная 21 и выращенная 22 части образуют по существу правильный цилиндрический монокристалл карбида кремния 20, причем границу раздела между выращенной и затравочной частью определяет затравочная грань 23, которая по существу параллельна основаниям указанного правильного цилиндрического монокристалла 20 и имеет отклонение от оси на угол примерно 0,5°-12° относительно базовой плоскости 26 монокристалла 20, а указанная монокристаллическая выращенная часть воспроизводит политип указанной монокристаллической затравочной части и имеет диаметр, по меньшей мере, примерно 100 мм. Изобретение обеспечивает получение высококачественных (с малым содержанием дефектов) монокристаллов карбида кремния большого ...

СПОСОБ ПРОИЗВОДСТВА ПОДЛОЖКИ НА ОСНОВЕ КАРБИДА КРЕМНИЯ И ПОДЛОЖКА КАРБИДА КРЕМНИЯ

Изобретение относится к технологии получения подложки из поликристаллического карбида кремния. Способ состоит из этапов предоставления покрывающих слоев 1b, каждый из которых содержит оксид кремния, нитрид кремния, карбонитрид кремния или силицид металла, выбранного из группы, состоящей из никеля, кобальта, молибдена и вольфрама, или покрывающих слоев, каждый из которых изготовлен из фосфоросиликатного стекла (PSG) или борофосфоросиликатного стекла (BPSG), имеющего свойства текучести допированного P2O5или B2O3и P2O5,на обеих поверхностях основной подложки 1a, изготовленной из углерода, кремния или карбида кремния для подготовки поддерживающей подложки 1, имеющей покрывающие слои, каждый из которых имеет гладкую поверхность; формирования пленок 10 поликристаллического карбида кремния на обеих поверхностях поддерживающей подложки 1 осаждением из газовой фазы или выращиванием из жидкой фазы; и химического удаления, по меньшей мере, покрывающих слоев 1b в поддерживающей подложке для отделения ...

УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ КРИСТАЛЛОВ КАРБИДА КРЕМНИЯ

... 1. Устройство для выращивания кристаллов карбида кремния на подложках, содержащее камеру, которая расположена вдоль оси, включающая отдельные средства для входа газов, содержащих углерод и для газов, содержащих кремний, средство для поддерживания подложки, расположенное в первой концевой зоне камеры, средство для выпуска отработанных газов, расположенное вблизи средства для поддерживания, средство для нагревания, обеспечивающее нагревание камеры до температуры, более чем примерно 1800°C, при этом средство для входа газов, содержащих кремний, размещено, сформировано и отрегулировано таким образом, что газы, содержащие кремний, проходят во вторую концевую зону камеры, отличающееся тем, что средство для входа газов, содержащих углерод, размещено, сформировано и отрегулировано таким образом, что углерод и кремний контактируют по существу в центральной зоне камеры, удаленной и от концевой первой зоны и от концевой второй зоны. 2. Устройство по п.1, в котором средство для входа газов, содержащих ...

СПОСОБ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛИЧЕСКОГО SiC

Изобретение относится к технологии получения монокристаллического SiC - широкозонного полупроводникового материала, используемого для создания на его основе интегральных микросхем. SiC получают сублимацией источника SiC, размещенного в нижней части ростовой ячейки, на затравочную пластину из монокристаллического SiC в присутствии пластины, размещенной на поверхности источника SiC, выполненной из материала, теплопроводность которого выше теплопроводности источника SiC, при этом пластина выполнена из монокристаллического SiC толщиной не меньше 500 мкм с диаметром не меньше диаметра монокристаллической затравки SiC, но не больше 70% внутреннего диаметра ростовой ячейки. Плоскость пластины, обращенная к монокристаллической затравке SiC, может быть плоскошлифованной с шероховатостью поверхности менее 10 мкм. Изобретение позволяет увеличить высоту и повысить качество выращиваемого слитка монокристаллического SiC. Это приводит к увеличению количества получаемых из слитка подложек и увеличению ...

Способ выращивания кристаллов карбида кремния и устройство для его осуществления

Изобретение относится к способам выращивания кристаллов из паровой фазы и может быть использовано для выращивания относительно крупных объемных кристаллов карбида кремния α-модификации. Способ позволяет повысить производительность процесса. Кристаллы SIC выращивают путем сублимации исходной шихты из зоны загрузки на затравку, расположенную на фронте кристаллизации в заданном градиенте температур. Перед началом процесса устанавливают зону загрузки, превышающей по длине зону сублимации. Процесс ведут при постоянном фронте кристаллизации. Затравку перемещают со скоростью роста кристалла через зону загрузки, которую перемещают в противоположном направлении со скоростью V = L/Τ, где L - длина зоны сублимации τ - время сублимации всей загруженной шихты. Длина зоны сублимации в несколько раз меньше высоты всей загрузки шихты. Это позволяет увеличить объем загрузки и увеличить время кристаллизации, что в свою очередь позволяет увеличить размеры выращиваемых кристаллов, используя перемещение кристалла ...

Полупроводниковый материал

Использование: твердотельная электроника . Полупроводниковый материал на основе эпитаксиальных слоев твердого раствора имеет состав: (SiC)t-x(ZrC)x, где О X 1. Материал получают путем непосредственного высокотемпературного контакта кристаллических пластин SIC и 2гС. Материал может работать в химически агрессивных средах. Достигнуто уменьшение ширины запрещенной зоны. Возможно управляемое изменение электрофизических и оптических свойств. 3 ил.

Способ получения игловидных монокристаллов карбида кремния

Verfahren zum Herstellen eines SiC-Einkristalls

Bei einem Verfahren zum Herstellen eines SiC-Einkristalls wird der SiC-Einkristall an einem SiC-Impfkristall gezüchtet durch Inkontaktbringen des SiC-Impfkristalls, welcher an einer drehbaren Impfkristall-Befestigungsstange befestigt ist, mit einer dltenden Schmelze in einem drehbaren Tiegel hergestellten Lösung. Das Verfahren weist auf: Starten einer Rotation der Impfkristall-Befestigungsstange, und Starten einer Rotation des Tiegels nach einer vorbestimmten Verzögerungszeit (Td); dann gleichzeitiges Stoppen der Rotation der Impfkristall-Befestigungsstange und der Rotation des Tiegels; dann Stoppen der Impfkristall-Befestigungsstange und des Tiegels für eine vorbestimmte Haltezeit (Ts); und Wiederholen eines Rotation/Stopp-Zyklus.

SiC-Epitaxiewafer, Verfahren zum Herstellen eines SiC-Epitaxiewafers, SiC-Vorrichtung und Leistungsumwandlungsgerät

VORRICHTUNG ZUR ZÜCHTUNG VON GROSSEN SILIZIUMKARBIDEINKRISTALLEN

Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat

Verfahren zur Herstellung mindestens eines semiisolierenden zur Herstellung von Halbleiter- und/oder Hochfrequenzbauelementen bestimmten SiC-Volumeneinkristalls (2; 33) mit einem spezifischen elektrischen Widerstand von mindestens 10Ωcm, wobeia) in mindestens einem Kristallwachstumsbereich (5; 36) eines Züchtungstiegels (3; 34) eine SiC-Wachstumsgasphase (9; 38) erzeugt wird und der SiC-Volumeneinkristall (2; 33) mittels Abscheidung aus der SiC-Wachstumsgasphase (9; 38) aufwächst,b) die SiC-Wachstumsgasphase (9; 38) aus einem SiC-Quellmaterial (6; 31), das sich in einem SiC-Vorratsbereich (4; 35) innerhalb des Züchtungstiegels (3; 34) befindet, gespeist wird, wobei ein Materialtransport von dem SiC-Vorratsbereich (4; 35) zu einer Wachstumsgrenzfläche (16; 39) des aufwachsenden SiC-Volumeneinkristalls (2; 33) stattfindet,c) dem Kristallwachstumsbereich (5; 36) Vanadium als ein Dotierstoff des aufwachsenden SiC-Volumeneinkristalls (2; 33) zugeführt wird,d) an der Wachstumsgrenzfläche (16; ...

Siliziumkarbid-Einkristallsubstrat und Siliziumkarbid-Epitaxiesubstrat

Siliziumkarbid-Einkristallsubstrat mit einer ersten Hauptfläche und einer zweiten Hauptfläche gegenüber der ersten Hauptfläche, wobei die erste Hauptfläche einen Höchstdurchmesser von nicht weniger als 100 mm aufweist, die erste Hauptfläche einen ersten mittleren Bereich mit Ausnahme eines Bereichs innerhalb von 3 mm von einem Außenumfang umfasst, in dem Fall, in dem der erste mittlere Bereich in erste quadratische Bereiche mit jeweils einer Seitenlänge von 250 µm unterteilt ist, jeder der ersten quadratischen Bereiche einen arithmetischen Mittenrauwert (Sa) von weniger als 0,2 nm aufweist, und eine Sauerstoffkonzentration in jedem der ersten quadratischen Bereiche nicht weniger als 5 Atom-% und weniger als 20 Atom-% beträgt.

SILICON CARBIDE

SEED CRYSTAL FROM SILICON CARBIDE SINGLE CRYSTAL AND PROCEDURE FOR THE PRODUCTION OF A STAFF THEREBY

PROCEDURE FOR THE PRODUCTION OF SIC CRYSTAL

PROCEDURE AND DEVICE FOR THE PRODUCTION OF SILICON CARBIDE CRYSTALS

PROCEDURE FOR THE PRODUCTION OF MONOCRYSTAL FIBERS FROM SILICON CARBIDE.

HIGH IMPEDANCE SILICON CARBIDE AND PROCEDURE FOR ITS PRODUCTION

PROCEDURE FOR THE PRODUCTION OF SILICON CARBIDE FILMS USING INDIVIDUAL SILICON-ORGANIC CONNECTIONS

Procedure for the production of silicon carbide whiskers

BREEDING OF VERY EVEN ONE EPITAKTI LAYERS FROM SILICON CARBIDE

FAR AND REACTOR FOR BREEDING OF SILICON CARBIDE EINKRISTALLUNG BY CHEMICAL STEAM SEPARATION

DEVICE TO ZUCHTUNG SILICON CARBIDE SINGLE CRYSTALS

Procedure for the production of silicon carbide crystals

PROCESS FOR PRODUCING SILICON CARBIDE PLATELETS AND THE PLATELETS SO-PRODUCED

Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes

Ultracoarse, monorystalline tungsten carbide and method for producing the same, and hard metal produced therefrom

Deposition of transition metal carbides

Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy

Method for depositing nanolaminate thin films on sensitive surfaces

A METHOD FOR FABRICATING A SIC FILM AND A METHOD FOR FABRICATING A SIC MULTI-LAYERED FILM STRUCTURE

An organic silicon gas having Si-H bond and Si-C bond is supplied onto a Si-contained base material, to form a SiC film on a main surface of the base material. Moreover, An organic silicon gas having Si-H bond and Si-C bond is supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC mufti-layered film structure.

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A silicon carbide substrate (1) with which manufacturing cost of a semiconductor device using the silicon carbide substrate can be reduced is provided with: a base substrate (10) composed of a silicon carbide; and a SiC layer (20), which is composed of single crystal silicon carbide other than the silicon carbide of the base substrate (10) and is disposed on the base substrate (10) in contact with the base substrate. Thus, in the silicon carbide substrate (1), the silicon carbide single crystal can be effectively used.

SILICON CARBIDE SUBSTRATE

Disclosed is a silicon carbide substrate (1) that can be prevented from warping even in cases where a different material layer, which is formed from a material other than silicon carbide, is formed thereon. The silicon carbide substrate (1) comprises a base layer (10) that is formed from silicon carbide, and a plurality of SiC layers (20) that are formed from single crystal silicon carbide and aligned on the base layer (10) when viewed in plan. A gap (60) is provided between the end faces (20B) of SiC layers (20) that are adjacent to each other.

PRODUCTION OF BULK SINGLE CRYSTALS OF ALUMINUM NITRIDE, SILICON CARBIDE AND ALUMINUM NITRIDE:SILICON CARBIDE ALLOY

Low defect density, low impurity bulk single crystals of AlN, SiC and AlN:SiC alloy are produced by depositing appropriate vapor species of Al, Si, N, C on multiple nucleation sites that are preferentially cooled to a temperature less than the surrounding surfaces in the crystal growth enclosure. The vapor species may be provided by subliming solid source material, vaporizing liquid Al, Si or Al-Si or injecting source gases. The multiple nucleation sites may be unseeded or seeded with a seed crystal such as 4H or 6H SiC.

METHOD OF MANUFACTURING SILICON CARBIDE CRYSTALS

METHOD OF MANUFACTURING SUBSTRATES HAVING IMPROVED CARRIER LIFETIMES

This invention relates to a method for depositing silicon carbide materia l onto a substrate such that the resulting substrate has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixtur e comprising a chlorosilane gas, a carbon- containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b. heating the substrate to a temperature of greater than 1000 °C but less than 2000 °C; with the pr oviso that the pressure within the reaction chamber is maintained in the ran ge of 0.1 to 760 torr. This invention also relates to a method for depositin g silicon carbide material onto a substrate such that the resulting substrat e has a carrier lifetime of 0.5 -1000 microseconds, the method comprising a. introducing a gas mixture comprising a non-chlorinated silicon- containing gas, hydrogen chloride, a carbon-containing gas, and hydrogen gas into a rea ction chamber containing a substrate; and b. heating the substrate to a temp erature ...

SUBSTRATE, SUBSTRATE WITH THIN FILM, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Provided are a substrate which suppresses deterioration of processing accuracy of a semiconductor device due to the warping of the substrate, a substrate provided with a thin film, a semiconductor device formed using the abovementioned substrate, and a method for manufacturing said semiconductor device. In the substrate (1), the diameter of the main surface (1a) is 2 inches or more, the bow value of the main surface (1a) is -40 µm to -5 µm, and the warp value of the main surface (1a) is 5 µm to 40 µm. The value of the surface roughness (Ra) of the main surface (1a) of the substrate (1) is preferably 1 nm or less and the value of the surface roughness (Ra) of the main surface (1b) is preferably 100 nm or less.

PROCESS FOR THE MANUFACTURE OF A REFRACTORY COMPOSITE MATERIAL PROTECTED AGAINST CORROSION

TRIANGULAR DEPOSITION CHAMBER FOR A VAPOR DEPOSITION SYSTEM

A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.

Verfahren zur Herstellung von Siliciumcarbid in Form von Whiskers

Verfahren zur Herstellung von drahtförmigen Kristallen

Verfahren zur Herstellung von Siliciumcarbidwhiskers

Verfahren zur Herstellung draht- oder bandförmiger Siliziumkarbidkristalle

Verfahren zur Herstellung von kristallinem Silicumkarbid

Verfahren zur Herstellung von aus Siliciumkarbid-Einkristallen bestehenden Haarkristallen kreisförmigen Querschnitts

Verfahren zur Herstellung von Siliciumkarbidkristallen

Verfahren zur Herstellung von Whiskers

Verfahren zur Herstellung von Whiskers

Verfahren zur Herstellung von Siliciumkarbidkristallen

СПОСОБ ПОЛУЧЕНИЯ ТИГЛЕЙ, СОСУДОВ, ТРУБ И ПРОФИЛИРОВАННЫХ ИЗДЕЛИЙ ИЗ ТУГОПЛАВКИХ МАТЕРИАЛОВ С МОНОКРИСТАЛЛИЧЕСКОЙ, ПОЛИКРИСТАЛЛИЧЕСКОЙ И ОПРЕДЕЛЕННОЙ СТРУКТУРОЙ

Способ относится к технологии получения тиглей, сосудов, труб и профилированных изделий из тугоплавких материалов с монокристаллической, поликристаллической и определенной структурой для применения в агрессивных средах, при контакте со щелочными расплавами и жидкими тугоплавкими материалами. Предложенный способ позволяет расширить сортамент тугоплавких профилированных изделий плавленого качества с различной структурой (монокристаллический, поликристаллической, кристаллической). Сегодня тигли, сосуды, трубы и профилированные изделия получают средствами порошковой металлургии, но такие материалы не удовлетворяют современным требованиям атомной, ракетной, авиастроительной отраслей и других, в связи с низкой их плотностью и несовершенством структуры, что приводит к быстрой потере рабочих параметров материалов. Предложенный способ позволяет получать изделия плавленого качества с разной структурой (монокристаллический, поликристаллической, кристаллической), которые значительно качественнее существующих ...

СПОСОБ ПОДГОТОВКИ ТИГЛЯ ДЛЯ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ КАРБИДА КРЕМНИЯ

Изобретение относится к микроэлектронике и касается технологии получения монокристаллического SiC - широко распространенного материала, используемого для изготовления интегральных микросхем, в частности подготовки тиглей для выращивания монокристаллов карбида кремния. В способе подготовки тигля для выращивания монокристаллов карбида кремния, включающем создание футеровки внутренней поверхности тигля путем покрытия внутренней боковой поверхности и внутреннего дна тигля предварительно раскроенными в соответствии с их размерами деталями из футеровочного материала, предварительно создают футеровочный материал путем нанесения на одну из сторон листа графитовой фольги пленки тугоплавкого металла толщиной от 0,1 до 20 мкм, после раскроя деталей из футеровочного материала создают футеровку тигля, покрывая его внутреннюю поверхность футеровочным материалом таким образом, что поверхность, покрытая пленкой тугоплавкого металла, обращена внутрь тигля, и проводя карбидизацию пленки тугоплавкого металла ...

METHOD OF PREPARING CRUCIBLE FOR GROWING SINGLE CRYSTALS OF SILICON CARBIDE

System for growing silicon carbide crystals

Process for production of silicon carbide single crystal, and silicon carbide substrate

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Silicon carbide substrate

Silicon carbide single crystal growing device with temperature gradient corrective action

A device for cement foaming machine grows

Method for preparing high-purity semi-insulating silicon carbide substrate

Thermal field structure of growing silicon carbide single crystal

Chemical vapor deposition method and device for preparing polycrystalline silicon carbide

Process for production of silicon carbide substrate

Method for reducing content of nitrogen impurities in silicon carbide powder

Cement foaming machine's growth apparatus

Silicon carbide single crystal grows and uses compound incubation structure

Water cooling device capable of regulating SiC crystal growth gradient and crystal growing furnace

There is not parcel thing carborundum growth of single crystal room

Prevent leaking silicon carbide crystal growth stove

Apparatus for producing silicon carbide single crystal

Preparation method of silicon carbide wafers and silicon carbide wafers

Air inlet device of silicon carbide epitaxial furnace

Growth device and growth method of low-carbon coated material density SiC single crystal

Method for preparing silicon carbide nanowire array through gas phase interlayer diffusion reaction process

Preparation method of tungsten and/or molybdenum metal powder, tungsten carbide and/or molybdenum carbide

Silicon carbide preparation method and prepared silicon carbide crystal

The invention provides a silicon carbide preparation method and a prepared silicon carbide crystal, and relates to the field of semiconductors. The silicon carbide preparation method is applied to the silicon carbide crystal growth device and comprises the steps that first gas is input into a crucible through a gas inlet pipeline, and the first gas comprises carrier gas and doping gas; and second gas is input into the heating furnace through the gas inlet, and the first gas and the second gas move from bottom to top. According to the silicon carbide preparation method, the gas introduced into the growth device is divided into two independent paths, and the first gas introduced into the crucible contains the doping gas and can directly participate in formation of the silicon carbide crystal, so that the stability and uniformity of the concentration of the doping gas are ensured. The two paths of gas are independently controlled, so that the pressure difference inside and outside the crucible ...

Silicon carbide and growth device and growth method thereof

The invention provides silicon carbide and a growth device and a growth method thereof. The growth device comprises a container body; the heat preservation layer is arranged in the container body, an opening is formed in the top of the heat preservation layer, and a temperature measuring device can be contained in the opening; the crucible is arranged in the heat preservation layer, a cavity which is arranged in the crucible in a protruding mode is arranged at the bottom of the crucible, the crucible comprises a crucible cover and is located at the top of the crucible, and a through hole is formed in the crucible cover; the heating body comprises a column body and a disc body, the column body is embedded into the cavity, and the disc body is arranged in the heat preservation layer; the induction coil is arranged on the periphery of the container body. The silicon carbide synthesized by the device does not need to be subjected to acid pickling subsequently, material blocks are loose, a conventional ...

Silicon carbide seed crystal bonding and fixing method and fixing structure

The invention discloses a silicon carbide seed crystal bonding and fixing method and a silicon carbide seed crystal bonding and fixing structure, an adhesive-free bonding process is used, and silicon carbide seed crystals and silicon carbide polycrystalline blocks are subjected to low-pressure and high-temperature treatment, react and then are bonded with each other. According to the invention, the bonding firmness and stability are improved, and the method is especially suitable for bonding large-size silicon carbide seed wafers; no adhesive is introduced in the bonding and fixing method, and the polycrystalline silicon carbide ceramic block is used, so that the polycrystalline silicon carbide ceramic block has almost no thermal expansion coefficient difference with the silicon carbide seed crystal at high temperature; compared with a traditional adhesive for bonding, the bonding strength is higher, and the risk that the stress of the seed crystal is increased due to the difference of ...

Crucible structure for improving utilization rate of silicon carbide powder and silicon carbide crystal preparation method

The invention belongs to the technical field of crystal growth, and particularly relates to a crucible structure for improving the utilization rate of silicon carbide powder and a silicon carbide crystal preparation method.The crucible structure for improving the utilization rate of the silicon carbide powder comprises a crucible body, a crucible cover is installed above the crucible body, and a plurality of material rings are sequentially installed in the crucible body from bottom to top; a feeding ring is installed above the uppermost layer of material ring in a plugging mode, and a crystal lining is installed above the feeding ring. According to the method, annular small crucibles surrounding the periphery of the crucible are stacked together, silicon carbide powder is placed through a material ring, a temperature gradient thermal field is arranged in a vacant area in the middle of the crucible, gas-phase components are driven by the temperature gradient to generate a power mass transfer ...

Procedure for the production of silicon carbide whiskers

DEPOSITION OF SILICON CARBIDE

PROCESS OF FORMATION Of a LAYER OF GRAPHENE ON the SURFACE Of a SUBSTRATE INCLUDING/UNDERSTANDING a LAYER OF SILICON

PROCEEDED OF FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE AREAS ON SUBSTRATES OUT OF SILICON AND SEMICONDUCTOR DEVICES WHILE RESULTING

PROCESS FOR THE PRODUCTION OF SILICON CARBIDE WHISKERS

Apparatus and method for growing large diameter single crystal

... 본 발명은 대구경 단결정 성장장치 및 성장방법에 관한 것으로, 도가니; 도가니의 외부에 설치되고, 도가니를 가열하는 코일; 도가니의 내부에서 하부에 배치되는 종자정; 및 도가니의 내부에서 측면에 배치되고, 원료 분말을 수용하는 용기를 포함하는 단결정 성장장치를 제공한다.

Single Crystal Growth Apparatus

METHOD FOR GROWING SINGLE CRYSTAL SILICON CARBIDE

... 본 발명에 따른 단결정 탄화 규소 성장 방법은 종자정의 일면에 보호막을 형성하는 단계, 보호막 위에 접착층을 형성하는 단계, 접착층을 이용하여 잉곳 성장 장치의 종자정 홀더에 종자정을 고정시키는 단계, 종자정 위에 단결정 탄화 규소를 성장시키는 단계를 포함한다.

SILICON CARBIDE PRODUCT, METHOD FOR PRODUCING SAME, AND METHOD FOR CLEANING SILICON CARBIDE PRODUCT

METHOD TO MANUFACTURE LARGE UNIFORM INGOTS OF SILICON CARBIDE BY SUBLIMATION/CONDENSATION PROCESSES

... 본 발명은 이하의 단계들을 포함하는, 실리콘 탄화물의 모놀리식 주괴의 제조방법에 관한 것이다: i) 폴리실리콘 금속 칩과 탄소 분말을 포함하는 혼합물을 마개가 달린 원통형 반응 셀에 도입하는 단계; ii) 상기 i) 단계의 원통형 반응 셀을 밀봉하는 단계; iii) 상기 ii) 단계의 원통형 반응 셀을 진공로(vacuum furnace)에 도입하는 단계; iv) 상기 iii) 단계의 진공로를 배기시키는 단계; v) 상기 iv) 단계의 진공로에 대기압 부근까지 실질적으로 불활성인 가스인 가스 혼합물을 충전시키는 단계; vi) 상기 v) 단계의 진공로 내의 상기 원통형 반응 셀을 1600℃ 내지 2500℃의 온도까지 가열시키는 단계; vii) 상기 vi) 단계의 원통형 반응 셀 내의 압력을 50torr 이하 0.05torr 이상까지 감압시키는 단계; 및 viii) 상기 vii) 단계의 원통형 반응 셀의 마개의 안쪽 상에 증기의 실질적인 승화 및 응결을 허용하는 단계.

PREPERATION METHOD FOR SiC INGOT, THE SiC INGOT AND A SYSTEM THEREOF

SILICON CARBIDE AND METHOD OF MANUFACTURING THE SAME

Method for producing silicon carbide single crystal

METHOD FOR GROWING SINGLE CRYSTAL AND APPARATUS THEREFOR

탄화 규소의 결정의 제조 방법 및 결정 제조 장치

... 탄화 규소의 오프 기판 상에 표면 거칠기를 억제하면서 탄화 규소의 단결정을 성장시키는 것이 가능한 방법을 얻는다. 탄화 규소의 종결정을, 규소 및 탄소를 포함하는 원료 용액에 접촉시키면서 회전시키는 탄화 규소의 결정의 제조 방법에 있어서, 상기 종결정의 결정 성장면은 오프각을 갖고, 상기 종결정의 회전 중심의 위치가, 상기 종결정의 중심 위치에 대하여, 상기 오프각의 형성 방향인 스텝 플로우 방향의 하류측에 있는 것을 특징으로 하는 탄화 규소의 결정의 제조 방법을 이용한다.

APPARATUS AND METHOD FOR MANUFACTURING AN INGOT CAPABLE OF EFFICIENTLY PROTECTING A SEED AND THE INGOT

PURPOSE: An apparatus and method for manufacturing an ingot are provided to improve the quality of an ingot by preventing the defects of a holder from being transmitted to the ingot. CONSTITUTION: A crucible(100) receives raw materials. A holder(170) is arranged on the raw materials and fixes a seed. An adhesive layer(160) is located between the seed and the holder and is inserted into a plurality of grooves located on the lower side of the holder. The adhesive layer is chemically combined with the seed. COPYRIGHT KIPO 2013 ...

다결정 ＳｉＣ 기판 및 그 제조방법

... 지지기판(2)은 다결정 SiC 로 형성된 다결정 SiC 기판이며, 다결정 SiC 기판의 양면 중 일측면을 제1면으로 함과 동시에 타측면을 제2면으로 하고, 제1면에서의 다결정 SiC 의 결정입경의 평균값과, 제2면에서의 다결정 SiC 의 결정입경의 평균값과의 차이를 상기 다결정 SiC 기판의 두께로서 나눈 값인 기판입경변화율이 0.43% 이하이고, 상기 다결정 SiC 기판의 휨 곡률반경이 142m 이상인 다결정 SiC 기판.

Supporting substrate, bonded substrate, method for manufacturing supporting substrate, and method for manufacturing bonded substrate

Provided is a supporting substrate ( 30 ) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate ( 10 ) composed of a silicon carbide polycrystalline body, and a coat layer ( 20 ) deposited on the silicon carbide polycrystalline substrate ( 10 ). The coat layer ( 20 ) is composed of silicon carbide or silicon and is in contact with the single crystalline wafer, and the arithmetic average roughness of the contact surface ( 22 ) of the coat layer ( 20 ) in contact with the single crystalline wafer is 1 nm or less.

Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface, and an average of residues on the main surface are equal to or larger than 0.2 and smaller than 200 in number.

Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes

This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

Method of production of sic single crystal

The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Halogen assisted physical vapor transport method for silicon carbide growth

A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

Substrate processing apparatus and solid raw material replenishing method

Disclosed is a substrate processing apparatus that includes: a processing chamber that accommodates a substrate; and a raw material supply system that sublimates a solid raw material to generate a gas raw material used for processing of the substrate, and supplies the generated gas raw material to the processing chamber. The raw material supply system includes: a solid raw material container that stores the solid raw material; a first piping connected between the solid raw material container and the processing chamber; and a second piping connected with the solid raw material container and equipped with an attachment portion to which a raw material replenishing container that holds the solid raw material for replenishment is attached.

Semiconductor device based on the cubic silicon carbide single crystal thin film

A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an Al x Ga 1-x As (0.6>x≧ 0 ) layer and a cubic silicon carbide single crystal layer. The apparatus also includes a substrate on which a metal layer is formed. The multilayer structure is bonded to a surface of the metal layer with the Al x Ga 1-x As (0.6>x≧ 0 ) in direct contact with the metal layer.

Sublimation growth of sic single crystals

In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

Silicon carbide powder and method for producing silicon carbide powder

There are provided a silicon carbide powder for silicon carbide crystal growth and a method for producing the silicon carbide powder. The silicon carbide powder is formed by heating a mixture of a silicon small piece and a carbon powder and thereafter pulverizing the mixture, and is substantially composed of silicon carbide.

Method of production of sic single crystal

The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated.

METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF

A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The collector region is arranged on a substrate having an off-axis orientation of about 4 degrees or lower. Further, a defect termination layer (DTL) is arranged between the substrate and the collector region. A thickness and a doping level of the DTL are configured to terminate basal plane dislocations in the DTL and reduce the growth of defects from the DTL to the collector region. At least some of the embodiments are advantageous in that SiC BJTs with improved stability are provided. Further, a method of evaluating the degradation performance of a SiC BJT is provided. 1. A method of manufacturing a silicon carbide , SiC , bipolar junction transistor , comprising:forming a collector region on a substrate having an off-axis orientation less than or equal to approximately 4 degrees; andforming a defect termination layer disposed between the substrate and the collector region,{'sup': 18', '19', '−3, 'the defect termination layer having a thickness in a range of approximately 12 to 30 micrometers for terminating basal plane dislocations in the defect termination layer and having a doping level in a range of approximately 3×10to 2×10cm.'}2. The method of claim 1 , wherein the off-axis orientation of the substrate is in a range of approximately 2 to 4 degrees.3. The method of claim 1 , wherein the doping level of the defect termination layer is in a range of approximately 5×10to 1×10cm.4. The method of claim 1 , wherein the forming of the defect termination layer includes epitaxial growth of SiC on top of the substrate claim 1 , the doping level of the defect termination layer includes a Nitrogen dopant atom.5. A silicon carbide claim 1 , SiC claim 1 , bipolar junction transistor (BJT) comprising:an emitter region,a base region,a collector region disposed on a substrate having an ...

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 10° C./cm or less.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereina surface of said silicon carbide layer located opposite to a side where the base substrate is located includes a (0001) facet plane, andsaid (0001) facet plane includes a central portion of said surface of the silicon carbide layer.3. The method of manufacturing a silicon carbide ingot according to claim 2 , whereina portion located under a region having said (0001) facet plane in said silicon carbide layer after the step of growing a silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.4. The method of manufacturing a silicon carbide ingot according to claim 3 , further ...

SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREFOR AND HEAT TREATMENT APPARATUS

A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T below the annealing temperature T in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms. 1. A method of manufacturing a silicon carbide epitaxial wafer , the method comprising:{'b': '1', 'I) annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in an atmosphere comprising a reducing gas at a first temperature T for a treatment time t;'}II) reducing the temperature of the substrate in the reducing gas atmosphere; and then{'b': 2', '1, 'III) performing epitaxial growth at a second temperature T below the annealing temperature T in I), while supplying a gas mixture comprising a first gas comprising a silicon atom and a second gas comprising a carbon atom.'}212. The method of claim 1 , wherein the first temperature T is higher than the second temperature T by 75 degrees C. or more.3. The method of claim 1 , wherein the epitaxial growth is performed by a CVD method.4. The method of claim 1 , wherein the first gas is a monosilane gas claim 1 , and the second gas is propane.5. The method of claim 1 , wherein the reducing gas is composed of hydrogen.6. The method of claim 1 , wherein the silicon carbide bulk substrate is composed of 4H—SiC.7. The method of claim 1 , wherein the treatment time t in I) ranges from 10 seconds to 180 seconds.81. The method of wherein ...

Perovskite manganese oxide thin film

An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m 10 ) orientation where 19≧m≧2. When m is 2 the perovskite manganese oxide thin film has a ( 210 ) orientation. The invention provides a perovskite manganese oxide thin film having a transition temperature at room temperature or above, which is higher than that of the bulk oxide, by exploiting the substrate strain and the symmetry of the crystal lattice.

METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

In a powder fabrication step (S) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon carbide powder as transition metal atoms for the silicon carbide powder, which is the source or silicon carbide, to produce a sublimation starting material (). In a purification process step (S), the sublimation starting material () is disposed in a purified graphite crucible (), and a sublimation/growth step (S) is carried out. When a growth height for this single crystal such that the donor concentration and acceptor concentration are equal in the single crystal of silicon carbide obtained by growth of sublimated raw material on a seed crystal in the sublimation/growth step (S) is achieved, nitrogen gas is introduced at 0.5-100 ppm of an inert atmospheric gas. 1. A method of producing a silicon carbide single crystal employing a production apparatus having a graphite member formed of graphite , disposing a raw material including a silicon carbide in the graphite member , and heating and sublimating the raw material and growing a single crystal of the silicon carbide on a seed crystal in an atmospheric gas , the method comprising:the step of fabricating the raw material by mixing a metal material including a transient metal atom with a silicon carbide source including the silicon carbide;the step of purification treatment to retain the graphite member under a temperature condition of 2,000 degrees C. or more, in an inert gas atmosphere of 100 Pa to 100 kPa; andthe step of disposing the raw material in the graphite member subsequent to the step of purification treatment, and heating and sublimating the raw material and growing a silicon carbide single crystal on the seed crystal.2. The method of producing a silicon carbide single crystal according to claim 1 , whereinthe silicon carbide source is a silicon carbide polycrystalline substance produced by means of a chemical vapor ...

Method for controlled growth of silicon carbide and structures produced by same

A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.

Method for manufacturing a silicon carbide wafer and respective equipment

An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

Low 1c screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm −2 to about 2000 cm −2 .

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME

A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a trench arranged in the SiC layer and having a bottom, a sidewall, and an upper corner region located between the sidewall and the upper surface of the SiC layer; a gate insulating film arranged on at least a part of the sidewall and on at least a part of the upper corner region of the trench and on at least a part of the upper surface of the SiC layer; and a gate electrode arranged on the gate insulating film. The upper corner region has a different surface from the upper surface of the SiC layer and from a surface that defines the sidewall. The gate electrode contacts with both of a first portion of the gate insulating film located on the upper corner region and a second portion of the gate insulating film located on the sidewall. The first portion of the gate insulating film is thicker than a third portion of the gate insulating film located on the upper surface of the SiC layer. And an end portion of the gate electrode is located on the upper corner region. 1. A silicon carbide semiconductor element comprising:a silicon carbide substrate which has a principal surface tilted with respect to a (0001) Si plane;a silicon carbide layer which is arranged on the principal surface of the silicon carbide substrate;a trench which is arranged in the silicon carbide layer and which has a bottom, a sidewall, and an upper corner region that is located between the sidewall and the upper surface of the silicon carbide layer;a gate insulating film which is arranged on at least a part of the sidewall and on at least a part of the upper corner region of the trench and on at least a part of the upper surface of the silicon carbide layer; anda gate electrode which is arranged on the gate insulating film,wherein the upper corner region has a surface which is different from the upper surface of ...

HIGHLY EPITAXIAL THIN FILMS FOR HIGH TEMPERATURE/HIGHLY SENSITIVE CHEMICAL SENSORS FOR CRITICAL AND REDUCING ENVIRONMENT

An oxygen sensor includes an epitaxial oxide thin film double perovskite oxygen sensor formed on a single crystal oxide substrate. The thin film includes a lanthanide element, barium, cobalt, and oxygen. 1. An oxygen sensor , comprising:a single crystal oxide substrate,a thin film double perovskite epitaxial oxide formed on the single crystal oxide substrate, wherein the thin film oxide comprises a lanthanide element, barium, cobalt, and oxygen;wherein the thin film oxide has a thickness such that the thin film oxide is capable of undergoing a reversible reaction with oxygen.2. The oxygen sensor of claim 1 , wherein the thin film oxide comprises (LnBa)CoOwhere Ln is a lanthanide element.3. The oxygen sensor of claim 1 , wherein the thin film oxide comprises (LaBa)CoO.4. The oxygen sensor of claim 1 , wherein the single crystal oxide substrate comprises LaAlO.5. The oxygen sensor of claim 1 , wherein the thin film oxide has a thickness of less than 500 nm.6. A method of making an oxygen sensor comprising: forming a thin film double perovskite epitaxial oxide on a single crystal oxide substrate claim 1 , wherein the thin film oxide comprises a lanthanide element claim 1 , barium claim 1 , cobalt claim 1 , and oxygen.7. The method of claim 6 , wherein the thin film oxide is formed on the single crystal oxide substrate using pulsed laser deposition.8. The method of claim 6 , wherein the thin film oxide is formed on the single crystal oxide substrate using pulsed laser deposition with a wavelength of 248 nm.9. The method of claim 6 , wherein the thin film oxide comprises (LnBa)CoOwhere Ln is a lanthanide element.10. The method of claim 6 , wherein the thin film oxide comprises (LaBa)CoO.11. The method of claim 6 , wherein the single crystal oxide substrate comprises LaAlO.12. The method of claim 6 , wherein the thin film oxide has a thickness of less than 500 nm.13. A method of detecting the presence of oxygen claim 6 , comprising:locating an oxygen sensor comprising a ...

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

A semiconductor substrate includes: a silicon substrate; a monocrystalline silicon carbide film formed on a surface of the silicon substrate; and a stress relieving film formed on the surface of the silicon substrate opposite from the side on which the monocrystalline silicon carbide film is formed, and that relieves stress in the silicon substrate by applying compressional stress to the silicon substrate surface on which the stress relieving film is formed, wherein a plurality of spaces is present in the monocrystalline silicon carbide film in portions on the side of the silicon substrate and along the interface between the monocrystalline silicon carbide film and the silicon substrate. 1. A semiconductor substrate comprising:a silicon substrate;a monocrystalline silicon carbide film disposed on a surface of the silicon substrate; anda stress relieving film disposed on the surface of the silicon substrate opposite from the side on which the monocrystalline silicon carbide film is disposed, and that relieves stress in the silicon substrate by applying compressional stress to the silicon substrate surface on which the stress relieving film is disposed,wherein a plurality of spaces is present in the monocrystalline silicon carbide film in portions on the side of the silicon substrate and along the interface between the monocrystalline silicon carbide film and the silicon substrate.2. The semiconductor substrate according to claim 1 , wherein the stress relieving film is a laminate of a first stress relieving film and a second stress relieving film.3. The semiconductor substrate according to claim 1 , wherein the stress relieving film contains any one of silicon oxide claim 1 , silicon nitride claim 1 , polysilicon claim 1 , and amorphous silicon.4. A semiconductor substrate manufacturing method comprising:a first step of forming a masking material on a surface of a silicon substrate;a second step of forming a plurality of openings in the masking material to partially ...

PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. 1. A process for producing an epitaxial silicon carbide single crystal substrate by epitaxially growing silicon carbide on a silicon carbide single crystal substrate , the production process comprising performing pretreatment etching by flowing a gas containing silicon and chlorine together with a hydrogen gas before epitaxial growth and thereafter , forming an epitaxial layer.2. The production process of an epitaxial silicon carbide single crystal substrate according to claim 1 , wherein in said pretreatment etching claim 1 , the silicon atom concentration in the gas containing silicon and chlorine is from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas.3. The production process of an epitaxial silicon carbide single crystal substrate according to claim 1 , wherein in said pretreatment etching claim 1 , the chlorine atom concentration in the gas containing silicon and chlorine is from 0.0001 to 0.1% based on hydrogen atoms in the hydrogen gas.4. The production process of an epitaxial silicon carbide single crystal substrate according to claim 1 , wherein the gas containing silicon and chlorine used in said pretreatment etching is SiHCl(wherein n is an integer of 0 to 3).5. The production process of an epitaxial silicon carbide single crystal substrate according to claim 1 , wherein said pretreatment etching is performed at a temperature of 1 claim 1 ,550 to 1 claim 1 ,650° C.6. The production process of an epitaxial silicon carbide single crystal substrate according to claim 1 , wherein in said pretreatment etching claim 1 , the etching amount is from 0.1 to 1 μm.7. The production process of an epitaxial silicon carbide single crystal substrate according ...

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked. 1. A silicon carbide substrate having at least stacking faults inside , comprisingencapsulated regions inside of the substrate, forming incoherent boundaries between the encapsulated regions and silicon carbide,wherein propagation of the stacking faults in the silicon carbide is blocked at the incoherent boundaries.2. The silicon carbide substrate according to claim 1 , wherein the encapsulated regions include at least one of silicon claim 1 , carbon claim 1 , nitrogen claim 1 , hydrogen claim 1 , helium claim 1 , neon claim 1 , argon claim 1 , krypton claim 1 , and xenon.3. The silicon carbide substrate according to claim 1 , wherein the encapsulated regions are hollow.4. The silicon carbide substrate according to claim 1 , wherein the silicon carbide substrate has two surfaces substantially parallel to each other and having different stacking faults density claim 1 , and propagation of the stacking faults from one surface with high stacking faults density to the other surface with low stacking faults density claim 1 , is blocked at the incoherent boundaries between the silicon carbide and the encapsulated regions.5. The silicon carbide substrate according to claim 1 , wherein when a height of the encapsulated region in a direction parallel to a thickness direction of the silicon carbide substrate is represented by H claim 1 , a width of the encapsulated region is represented by S claim 1 , center-to-center distance between the adjacent encapsulated regions is represented by P claim 1 , and an angle formed by the stacking faults and the incoherent boundaries is represented by θ claim 1 , H≧(P−S)/tan θ is satisfied.6. A silicon carbide substrate having at least stacking faults inside and ...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming, by epitaxial growth, a silicon carbide film on the silicon carbide substrate into which the ions have been implanted; and forming a pn junction region in the silicon carbide film. 1. A method of manufacturing a semiconductor device , comprising:preparing a silicon carbide substrate of a hexagonal system;implanting ions into the silicon carbide substrate;forming, by epitaxial growth, a silicon carbide film on the silicon carbide substrate into which the ions have been implanted; andforming a pn junction region in the silicon carbide film.2. The method according to claim 1 , wherein the ions are implanted into the silicon carbide substrate with a temperature of the silicon carbide substrate of 100° C. or less.3. The method according to claim 1 , wherein the ions are implanted into the silicon carbide substrate claim 1 , a conductivity type of the impurity being identical to a conductivity type of the silicon carbide substrate.4. The method according to claim 1 , wherein the ions are implanted into the silicon carbide substrate with a surface thereof exposed without forming a film on the silicon carbide substrate.5. The method according to claim 1 , wherein the ions are selectively implanted into a predetermined region of the silicon carbide substrate.6. The method according to claim 1 , wherein the silicon carbide substrate is of an n-type claim 1 , andthe ions of phosphorus or nitrogen are implanted into the silicon carbide substrate.7. The method according to claim 1 , wherein a dose of the ions implanted into the silicon carbide substrate is 1E15 cmor greater and 1E17 cmor less.8. The method according to claim 5 , wherein the ions are implanted into the silicon carbide substrate such that a region formed by shifting the pn junction region used for device operation by d/ ...

APPARATUS AND METHOD FOR PRODUCTION OF ALUMINUM NITRIDE SINGLE CRYSTAL

The invention is an apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material, thereby to recrystallize the aluminum nitride onto a seed crystal, which includes a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, and a heating element that is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, wherein the growth vessel includes a main body which has an accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and wherein the heating element is composed of a metal material containing tungsten. 1. An apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material , thereby to recrystallize the aluminum nitride onto a seed crystal , the apparatus comprising:a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, anda heating element which is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, whereinthe growth vessel comprises a main body which has the accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and whereinthe heating element is composed of a metal material containing tungsten.2. The apparatus for production of an aluminum nitride single crystal according to claim 1 , wherein the ...

Non-polar plane of wurtzite structure material

The present invention relates to a method for growing a novel non-polar (13 0) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 0) plane obtained according to the aforementioned method. 1. A method for growing a non-polar (13 0) plane epitaxy layer of wurtzite structure , which comprises the following steps:providing a single crystal oxide with perovskite structure;selecting a plane of the single crystal oxide as a substrate; and{'o': {'@ostyle': 'single', '4'}, 'forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the substrate by a vapor deposition process.'}2. The method of claim 1 , wherein the single crystal oxide is an oxide with perovskite structure of LaAlO claim 1 , LaNiO claim 1 , LaGaO claim 1 , SrTiO claim 1 , (LaSr)(AlTa)O claim 1 , PrAlO claim 1 , or NdAlO.3. The method of claim 1 , wherein the non-polar (13 0) plane epitaxy layer is a zinc oxide claim 1 , or a Group III nitride.4. The method of claim 1 , wherein the zinc oxide is further doped with magnesium claim 1 , calcium claim 1 , strontium claim 1 , barium claim 1 , cadmium claim 1 , aluminum claim 1 , gallium claim 1 , indium claim 1 , or combinations thereof.5. The method of claim 3 , wherein the Group III nitride is gallium nitride claim 3 , indium nitride claim 3 , aluminum nitride claim 3 , indium gallium nitride claim 3 , aluminum gallium nitride claim 3 , aluminum indium nitride claim 3 , or aluminum indium gallium nitride.6. The method of claim 1 , wherein the plane is a crystal plane or a cross section of the single crystal oxide.7. The method of claim 1 , wherein the plane is a plane ...

SIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

According to one embodiment, an SiC semiconductor device including a p-type 4H—SiC region formed on at least part of a surface portion of an SiC substrate, a first gate insulating film formed on the 4H—SiC region and formed of a 3C—SiC thin film having p-type dopant introduced therein, a second gate insulating film formed on the first gate insulating film, and a gate electrode formed on the second gate insulating film. 1. An SiC semiconductor device comprising:a 4H—SiC substrate,a p-type 4H—SiC region formed on at least part of a surface portion of the 4H—SiC substrate,a first gate insulating film formed on the 4H—SiC region, the first gate insulating film being a 3C—SiC thin film having p-type dopant introduced therein,a second gate insulating film of an oxide film formed on the first gate insulating film, anda gate electrode formed on the second gate insulating film.2. The device of claim 1 , wherein the first gate insulating film is insulated by introducing C defects in the 3C—SiC thin film.3. The device of claim 1 , wherein the first gate insulating film has one of an amorphous structure and polycrystalline structure.4. The device of claim 3 , wherein thickness of the first gate insulating film is set in a range of 2 to 5 nm and an amount of p-type dopant contained in the first gate insulating film is set in a range of 1×10to 1×10cm.5. The device of claim 1 , wherein the SiC substrate is an n-type 4H—SiC substrate.6. The device of claim 5 , wherein the SiC substrate has a stack structure of p-type 4H—SiC and n-type 4H—SiC.7. An SiC semiconductor device comprising:a 4H—SiC substrate,a first 4H—SiC region of a p type formed on part of a surface portion of the 4H—SiC substrate,a second 4H—SiC region of an n type formed on part of a surface portion of the first 4H—SiC region, the second 4H—SiC region being formed separately from one end portion of the first 4H—SiC region,a third 4H—SiC region of the p type formed on part of the surface portion of the first 4H—SiC ...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step. 113-. (canceled)14. A manufacturing method of a semiconductor device , comprising:performing activation annealing of an ion-implanted monocrystalline silicon carbide substrate,wherein a first carbon film disposed on a back surface of the monocrystalline silicon carbide substrate is maintained during said activation annealing.15. The manufacturing method of a semiconductor device of claim 14 ,wherein a second carbon film disposed on a front surface of the monocrystalline silicon carbide substrate is maintained during said activation annealing.16. The manufacturing method of a semiconductor device of claim 15 ,wherein said first and second carbon films each have a thickness of about 100 nm.17. The manufacturing method of a semiconductor device of claim 14 ,wherein said activation annealing is performed at 1800° C. in a vacuum for about 1 minute.18. The manufacturing method of a semiconductor device of claim 14 ,wherein said monocrystalline silicon carbide substrate has an off angle between about 0 to 8°.19. The manufacturing method of a semiconductor device of claim 18 , ...

Film-forming apparatus for the formation of silicon carbide and film-forming method for the formation of silicon carbide

A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit.

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A single crystal substrate made of silicon carbide and a first support substrate having a size greater than a size of each of the single crystal substrates are prepared. The single crystal substrate is bonded onto the first support substrate. Process on the single crystal substrate bonded to the first support substrate is performed. The first support substrate is removed. The single crystal substrate is subjected to heat treatment. The single crystal substrate is bonded onto a second support substrate having a size greater than the size of the single crystal substrate. Process on the single crystal substrate bonded to the second support substrate is performed. 1. A method for manufacturing a silicon carbide semiconductor device , comprising the steps of:preparing at least one single crystal substrate made of silicon carbide and a first support substrate having a size greater than a size of each of said at least one single crystal substrate;bonding each of said at least one single crystal substrate onto said first support substrate;performing process on said at least one single crystal substrate bonded to said first support substrate;removing said first support substrate after the step of performing process on said at least one single crystal substrate;subjecting said at least one single crystal substrate to heat treatment after the step of removing said first support substrate;bonding each of said at least one single crystal substrate onto a second support substrate having a size greater than the size of each of said at least one single crystal substrate after the step of subjecting said at least one single crystal substrate to heat treatment; andperforming process on said at least one single crystal substrate bonded to said second support substrate.2. The method for manufacturing a silicon carbide semiconductor device according to claim 1 , further comprising the step of forming an interposing portion made of a material different from each of silicon carbide and a ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown. 1. A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation , said method comprising the steps of:preparing a seed substrate made of silicon carbide and silicon carbide raw material, andgrowing said silicon carbide single crystal on a growth face of said seed substrate by sublimating said silicon carbide raw material,in said step of growing said silicon carbide single crystal, a maximum growing rate of said silicon carbide single crystal growing on said growth face of said seed substrate being greater than a maximum growing rate of silicon carbide crystal growing on a surface of said silicon carbide raw material.2. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed substrate exceeds 20 mm in said step of growing said silicon carbide single crystal.3. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed ...

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM

A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×10atoms/cmand not more than 2000×10atoms/cm, and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided. 1. A silicon carbide substrate , comprising:a first main surface; anda second main surface opposite to said first main surface,a region including at least one main surface of said first and second main surfaces being made of single-crystal silicon carbide,{'sup': 10', '2', '10', '2, 'sulfur atoms being present in said one main surface at not less than 60×10atoms/cmand not more than 2000×10atoms/cm, and carbon atoms as an impurity being present in said one main surface at not less than 3 at % and not more than 25 at %.'}2. The silicon carbide substrate according to claim 1 , wherein chlorine atoms are present in said one main surface at not more than 3000×10atoms/cm.3. The silicon carbide substrate according to claim 1 , wherein oxygen atoms are present in said one main surface at not less than 3 at % and not more than 30 at %.4. The silicon carbide substrate according to claim 1 , wherein a metal impurity is present in said one main surface at not more than 4000×10atoms/cm.5. The silicon carbide substrate according to claim 1 , wherein said one main surface has a surface roughness of not more than 0.5 nm when evaluated in Rq.6. The silicon carbide substrate according to claim 1 , having a diameter of not less than 110 mm.7. The silicon carbide substrate according to claim 1 , having a diameter of not less than 125 mm and not more than 300 mm.8. The silicon carbide ...

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph , wherein upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm , a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak is observed at a lower wavenumber than that of the TO peak.3. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak has a peak intensity 0.3 or greater times the peak intensity of the TO peak.4. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the absolute amount of shift of the LO peak from 972 cmis 4 cmor more.5. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 4 , wherein the amount of shift of the LO peak from 972 cmis 4 cmor more.6. The seed material for liquid phase epitaxial growth of a ...

FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A feed material for epitaxial growth of a monocrystalline silicon carbide , the feed material being used in a method for epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.2. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein a first-order diffraction peak corresponding to the (111) crystal plane is a main diffraction peak having the highest diffraction intensity among first-order diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.3. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the diffraction peak other than the diffraction peak corresponding to the (111) crystal plane includes at least one diffraction peak claim 1 , each corresponding to one of a (200) crystal plane claim 1 , a (220) crystal plane claim 1 , and a (311) crystal plane.4. The feed ...

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , whereinupon X-ray diffraction of the surface layer at least one first-order diffraction peak is observed, each first-order diffraction peak corresponding to one of a (111) crystal plane, a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane, andthe average crystallite diameter calculated from the at least one first-order diffraction peak is more than 700 A.3. The seed material for ...

PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPOR TRANSPORT METHOD AND ANNEALING SILICON CARBIDE SINGLE CRYSTAL IN SITU

A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process. 1. A process for growing silicon carbide single crystals by Physical Vapor Transport , which can achieve real-time dynamic control of the temperature distribution of a growth chamber by regulating the position of an insulation layer on the upper part of the graphite crucible , for controlling the temperature distribution of the growth chamber in real-time during the growth process according to the needs of the technology , wherein said process comprises:on loading a crucible inside the furnace, regulating the position of the insulation layer by an automatic drive and then recording a relative position of it inside the furnace body; during the growth process, using the automatic drive to adjust the relative position of the insulation layer according to the needs of the technology to make the temperature distribution of growth chamber form a desired one, wherein the structures of the upper thermal insulation layer are fitted with the ...

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

SILICON CARBIDE STRUCTURE AND METHOD OF PRODUCING THE SAME

To provide a block-constituted structure of silicon carbide for use as a construction material, and a method of producing the block-constituted silicon carbide structure, which method realizes thorough compatibility with the natural environment by consuming carbon dioxide and releasing oxygen during the block production process. The silicon carbide structure is formed by injecting carbon dioxide into silicon-oxide-rich silica sand sealed a form to react therewith and form the resulting silicon carbide into a block of fixed shape, and is waterproofed for use as a construction material. 1. A silicon carbide structure characterized in being formed by injecting carbon dioxide into silicon-oxide-rich silica sand sealed in a form to react therewith and form silicon carbide produced by the reaction into a block of fixed shape.2. A silicon carbide structure according to claim 1 , characterized in that the block is used as a construction material.3. A silicon carbide structure according to or claim 1 , characterized in that surfaces of the block are subjected to waterproofing partially or throughout to maintain watertightness of the block.4. A silicon carbide structure according to any of to claim 1 , characterized in that the block is a block formed using a form of desired shape.5. A silicon carbide structure according to any of to claim 1 , characterized in that the block is in a finished block shape for use as it is as a compression-resistive silicon carbide structure claim 1 , and for use as a silicon carbide structure having material tensile strength is provided internally and at sides (bonding portions) of the block with a material having tensile resistance and/or a metal material.6. A method of producing a silicon carbide structure characterized in comprising: sealing silicon-oxide-rich silica sand into a form; and injecting carbon dioxide into the silica sand to react therewith claim 1 , thereby forming a silicon carbide block of fixed shape usable as a construction ...

Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material. 1. A method of forming polycrystalline SiC material comprising the steps of:(a) positioning bulk carbon at a first location inside of a graphite crucible, wherein the bulk carbon is gas-permeable and vapor-permeable;(b) positioning a mixture comprised of elemental silicon (Si) and elemental carbon (C) at a second location inside of the graphite crucible;(c) following steps (a) and (b), removing adsorbed gas, or moisture, or volatiles or some combination of adsorbed gas, moisture and volatiles from the mixture and the bulk carbon positioned inside of the graphite crucible by heating the mixture and the bulk carbon positioned inside of the enclosed crucible to a first temperature which is below the melting point of the elemental Si;(d) following step (c), forming as-synthesized silicon carbide (SiC) inside of the crucible by heating the mixture positioned inside of the enclosed crucible to a second temperature sufficient to initiate a reaction between the elemental Si and the elemental C of the mixture that forms the as-synthesized SiC inside of the crucible ...

SEMI-INSULATING SILICON CARBIDE MONOCRYSTAL AND METHOD OF GROWING THE SAME

A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×10Ω·cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave devices. The deep energy level dopants and the intrinsic point defects jointly serve to compensate the intrinsic impurities, so as to obtain a high quality semi-insulating single crystal. 1. A semi-insulating silicon carbide monocrystal , comprising intrinsic impurities , deep energy level dopants and intrinsic point defects ,wherein the intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities,wherein the intrinsic impurities comprise shallow energy level donor impurities and shallow energy level acceptor impurities, andwherein a sum of a concentration of the deep energy level dopants and a ...

Wavelength Converter for an LED, Method of Making, and LED Containing Same

A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component. 1. A crystal growth method comprising:(a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed inside of a furnace chamber, the growth crucible disposed inside of a furnace chamber defining a growth ambient; and(b) sublimation growing a SiC single crystal on the SiC seed crystal via precipitation of sublimated SiC source material on the SiC seed crystal in the presence of a reactive atmosphere in the growth ambient that removes donor and/or acceptor background impurities from the growth ambient.2. The method of claim 1 , wherein the reactive atmosphere includes a halide vapor compound and one or more gases.3. The method of claim 2 , wherein:the halide vapor compound is comprised of (1) fluorine or chlorine, and (2) tantalum or niobium; andthe one or more gases includes argon, hydrogen, or a mixture of argon+hydrogen.4. The method of claim 2 , further including:(c) following step (b), changing the atmosphere in the growth ambient to a non-reactive atmosphere; and(d) following step (c), introducing ...

Method for producing silicon carbide crystal

There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500° C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME

A silicon carbide semiconductor device including an SBD measuring a temperature of a silicon carbide semiconductor element. The silicon carbide semiconductor device includes a MOSFET formed on a silicon carbide epitaxial substrate, and an SBD section measuring a temperature of the MOSFET. The SBD section includes an n-type cathode region in a surface portion of a silicon carbide drift layer; an anode titanium electrode formed on the cathode region, the electrode serving as a Schottky electrode; an n-type cathode contact region of a higher concentration than that of the cathode region, formed in the surface portion of the silicon carbide drift layer to make contact with the cathode region; a cathode ohmic electrode formed on the cathode contact region; and a first p-type well region formed within the silicon carbide drift layer to surround peripheries of the cathode region and the cathode contact region. 1. A silicon carbide semiconductor device , comprising:a silicon carbide epitaxial substrate having an n-type silicon carbide substrate, and an n-type silicon carbide drift layer formed on a surface of the silicon carbide substrate;a silicon carbide semiconductor element formed on the silicon carbide epitaxial substrate; and an n-type cathode region in a surface portion of the silicon carbide drift layer,', 'a first titanium electrode formed on the cathode region, the first titanium electrode serving as a Schottky electrode,', 'an n-type cathode contact region formed in the surface portion of the silicon carbide drift layer so as to make contact with the cathode region, the cathode contact region having a higher concentration than the cathode region,', 'a first ohmic electrode formed on the cathode contact region,', 'a second titanium electrode formed on the first ohmic electrode, and', 'a first p-type well region formed so as to surround peripheries of the cathode region and the cathode contact region within the silicon carbide drift layer,, 'a Schottky diode formed ...

Silicon carbide crystal and method of manufacturing silicon carbide crystal

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

A method for manufacturing a silicon carbide substrate includes the steps of: preparing a seed substrate made of silicon carbide; etching a main surface of the seed substrate prepared; obtaining an ingot by growing a silicon carbide single crystal film on a crystal growth surface formed by etching the main surface of the seed substrate; 1. A method for manufacturing a silicon carbide substrate , comprising the steps of:preparing a seed substrate made of silicon carbide;etching one main surface of said seed substrate prepared;obtaining an ingot by growing a single crystal film, which is made of silicon carbide, on a crystal growth surface formed by etching said main surface of said seed substrate; and a first etching step of removing silicon atoms, which form said silicon carbide, from an etching region using a gas including halogen atoms, said etching region being a region including said main surface of said seed substrate; and', 'a second etching step of removing carbon atoms, which form said silicon carbide, from said etching region from which the silicon atoms have been removed, using an oxidizing gas., 'obtaining a silicon carbide substrate by cutting said ingot, the step of etching said seed substrate including2. The method for manufacturing the silicon carbide substrate according to claim 1 , whereinin said first etching step, the silicon atoms forming said silicon carbide are removed while the carbon atoms forming said silicon carbide remain in said etching region.3. The method for manufacturing the silicon carbide substrate according to claim 1 , whereinin said first etching step, the silicon atoms forming said silicon carbide are removed from said etching region using chlorine gas or hydrogen chloride gas.4. The method for manufacturing the silicon carbide substrate according to claim 1 , further comprising the step of substituting the gas including said halogen atoms with an inert gas claim 1 , after said first etching step and before said second etching ...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A method for manufacturing a silicon carbide semiconductor device includes the step of forming a silicon dioxide film. The step of forming an electrode includes the steps of forming a metal film containing Al and Ti on the silicon carbide substrate, and heating the metal film. The step of heating the metal film has the steps of increasing temperature of the metal film from a temperature of less than 300° C. to a temperature of not less than 300° C. and not more than 450° C. with a first temperature gradient, holding the metal film within a temperature range of not less than 300° C. and not more than 450° C. with a second temperature gradient, and increasing the temperature of the metal film to a temperature of not less than 500° C. with a third temperature gradient. The second temperature gradient is smaller than the first temperature gradient and the third temperature gradient. 1. A method for manufacturing a silicon carbide semiconductor device , comprising the steps of:preparing a silicon carbide substrate;forming a silicon dioxide film on said silicon carbide substrate; andforming an electrode containing Al and Ti to make contact with said silicon carbide substrate and said silicon dioxide film, forming a metal film containing Al and Ti on said silicon carbide substrate, and', 'heating said metal film,, 'the step of forming said electrode including the steps of'} increasing temperature of said metal film from a temperature of less than 300° C. to a temperature of not less than 300° C. and not more than 450° C. with a first temperature gradient,', 'holding said metal film within a temperature range of not less than 300° C. and not more than 450° C. with a second temperature gradient, after the step of increasing the temperature of said metal film, and', 'increasing the temperature of said metal film to a temperature of not less than 500° C. with a third temperature gradient, after the step of holding said metal film,', 'said second temperature gradient being ...

SEMICONDUCTOR DEVICE AND METHOD FOR GROWING SEMICONDUCTOR CRYSTAL

A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide. 1. A semiconductor device comprising:a base substrate;a pattern on the base substrate;a buffer layer on the base substrate; andan epitaxial layer on the buffer,wherein the pattern is a self-assembled pattern.2. The semiconductor device according to claim 1 , wherein each of the base substrate and the pattern is formed of silicon carbide.3. The semiconductor device according to claim 1 , wherein the pattern vertically protrudes from the base substrate.4. The semiconductor device according to claim 3 , wherein the protruding shape is an elliptical cone shape.5. The semiconductor device according to claim 4 , wherein the elliptical cone shape has a long axis diameter of about 10 nm to about 30 nm and a height of about 100 nm or less.6. The semiconductor device according to claim 1 , wherein the buffer layer is disposed on only a surface of the substrate exposed between the pattern and a pattern adjacent to the pattern.7. The semiconductor device according to claim 6 , wherein the buffer layer is formed of silicon carbide.8. A method for growing a semiconductor crystal claim 6 , the method comprising:cleaning a silicon ...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Gas containing Si, gas containing C and gas containing Cl are introduced into a reacting furnace. SiC epitaxial film is grown on the surface of a 4H—SiC substrate by CVD in a gas atmosphere including raw material gas, additive gas, doping gas and carrier gas. The amount of the gas containing Cl relative to the gas containing Si in the gas atmosphere is reduced gradually. At the start of growth, the number of Cl atoms in the gas containing Cl is three times as large as the number of Si atoms in the gas containing Si. The number of Cl atoms in the gas containing Cl relative to the number of Si atoms in the gas containing Si in the gas atmosphere is reduced at a rate of 0.5%/min to 1.0%/min. The method grows silicon carbide semiconductor film at a high rate. 1. A method for manufacturing a silicon carbide semiconductor device , comprising:a first step of exposing a silicon carbide semiconductor substrate to a gas atmosphere in which gas containing chlorine is added to gas containing silicon and gas containing carbon, to grow a silicon carbide semiconductor film on the silicon carbide semiconductor substrate; anda second step of gradually reducing an introduction amount of the gas containing chlorine relative to the gas containing silicon in the gas atmosphere during the growth of the silicon carbide semiconductor film.2. The method for manufacturing a silicon carbide semiconductor device according to claim 1 , wherein the number of chlorine atoms in the gas containing chlorine relative to the number of silicon atoms in the gas containing silicon in the gas atmosphere is reduced at a rate of 0.5%/minute to 1.0%/minute in the second step.3. The method for manufacturing a silicon carbide semiconductor device according to claim 1 , wherein the second step begins at the start of the first step.4. The method for manufacturing a silicon carbide semiconductor device according to claim 3 , wherein the number of chlorine atoms in the gas containing chlorine is three times as ...

HIGH VOLTAGE POWER SEMICONDUCTOR DEVICES ON SIC

4H SiC epiwafers with thickness of 50-100 μm are grown on 4° off-axis substrates. Surface morphological defect density in the range of 2-6 cmis obtained from inspection of the epiwafers. Consistent carrier lifetime in the range of 2-3 μs has been obtained on these epiwafers. Very low BPD density has been confirmed in the epiwafers with BPD density down to below 10 cm. Epitaxial wafers with thickness of 50-100 μm have been used to fabricate diodes. High voltage testing has demonstrated blocking voltages near the theoretical values for 4H-SiC. Blocking voltage as high as 8 kV has been achieved in devices fabricated on 50 μm thick epitaxial films, and blocking voltage as high as 10 kV has been obtained in devices fabricated on 80 μm thick films. Failure analysis confirmed triangle defects, which form from surface damage or particles present during epitaxy, are killer defects and cause the device to fail in reverse bias operation. In addition, the leakage current at the high blocking voltages of the JBS diodes showed no correlation with the screw dislocation density. It is also observed that the main source of basal plane dislocations in the epilayer originates in the crystal growth process. 1. A high voltage semiconductor device comprising:{'sup': '2', 'claim-text': [{'sup': '2', 'a micropipe density of less than 1/cm,'}, {'sup': '2', 'a screw dislocation density of less than 2000/cm, and'}, {'sup': '2', 'a basal plane dislocation density of less than 2000/cm; and'}], 'a single crystal, 4° off-axis 4H-SiC substrate tilted away from the c-axis toward the <11-20> direction, having an area of 0.02 to 1.5 cmhaving [{'sup': 14', '3', '16', '3, 'a net carrier concentration in the range from 1×10/cmto 2×10/cm,'}, {'sup': '2', 'a micropipe density of less than 1/cm,'}, {'sup': '2', 'a screw dislocation density of less than 2000/cm, and'}, {'sup': '2', 'a basal plane dislocation density of less than 10/cm.'}], 'a plurality of epitaxial layers over the substrate, wherein at ...

SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE

When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S×100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less. 1. A method for producing an SiC single crystal , having the following constitution:(a) the method for producing an SiC single crystal repeats an a-plane growth step n (n≧2) times;(b) a first a-plane growth step is a step for carrying out the a-plane growth of an SiC single crystal on a first growth plane by using a first seed crystal having the first growth plane with an offset angle from the {0001} plane of 80° to 100°;(c) a k-th a-plane growth step (2≦k≦n) is a step for cutting out a k-th seed crystal having a k-th growth plane with a growth direction 45° to 135° different from the growth direction of a (k−1)-th a-plane growth step and an offset angle from the {0001} plane of 80° to 100° from a (k−1)-th grown crystal obtained in the (k−1)-th a-plane growth step, and carrying out the a-plane growth of an SiC single crystal on the k-th growth plane; and{'sub': 'facet', 'claim-text': {'br': None, 'i': S', 'S', '/S, 'sub': facet', '1', '2, '(%)=×100\u2003\u2003(A)'}, '(d) the k-th a-plane growth step (1≦k≦n) is a step for carrying out the a-plane growth of an SiC single crystal on the k-th growth plane so that an area ratio Sof a Si-plane side facet region represented by the equation (A) is maintained at 20% or less{'sub': 1', '2, 'where Sis the sum of the total area of areas obtained by projecting polar plane steps of Si-plane side on the k-th growth plane and the total area of areas obtained by projecting {1-100} plane facets sandwiched between the polar plane steps of Si-plane side on the k-th growth plane, and Sis the total area of the k-th growth plane.'}2. The method for producing an SiC single crystal according to claim 1 ,{'sub': '1', 'wherein the ...

SiC EPITAXIAL GROWTH APPARATUS

A SiC epitaxial growth apparatus according to an embodiment includes: a chamber into which a process gas at least containing silicon and carbon is introduced and housing a substrate to undergo epitaxial growth with the process gas; piping that discharges a gas containing a byproduct generated through epitaxial growth from the chamber; and a valve for pressure control in a middle of the piping. The valve has a flow inlet into which the gas flows from an upstream portion of the piping that causes the chamber and the valve to connect, and a flow outlet that allows the gas to flow out to a downstream portion of the piping that connects with the upstream portion via the valve. a part of the downstream portion is at a position lower than the flow outlet. The apparatus comprises a trap part being capable of collecting the byproduct at the downstream portion. 1. A SiC epitaxial growth apparatus comprising:a chamber into which a process gas at least containing silicon and carbon is introduced, the chamber being capable of housing a substrate to undergo epitaxial growth with the process gas;piping that discharges a gas containing a byproduct generated through epitaxial growth on the substrate from the chamber; anda valve for pressure control provided in a middle of the piping, whereinthe valve has a flow inlet into which the gas flows from an upstream portion of the piping that causes the chamber and the valve to connect with each other, and a flow outlet that allows the gas to flow out to a downstream portion of the piping that connects with the upstream portion via the valve, andat least a part of the downstream portion is provided at a position lower than the flow outlet, andthe SiC epitaxial growth apparatus further comprises a trap part that is capable of collecting the byproduct at the downstream portion.2. The SiC epitaxial growth apparatus of claim 1 , wherein the process gas contains chlorine.3. The SiC epitaxial growth apparatus of claim 1 , wherein at least any of ...

PROCESS FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING IMPROVED CHARACTERISTICS

A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects. 1. A process for manufacturing a silicon carbide semiconductor device , comprising:providing a silicon carbide wafer, having a substrate;carrying out an epitaxial growth for formation on the substrate of an epitaxial layer, having a top surface, propagation of dislocations from the substrate towards the top surface occurring during said epitaxial growth with consequent formation of surface damages; andsubsequent to the carrying out the epitaxial growth, removing a surface portion of the epitaxial layer starting from said top surface, so as to remove the surface damages at said top surface and define a resulting top surface substantially free of defects.2. The process according to claim 1 , wherein said surface damages are pits due to propagation of the dislocations starting from said substrate towards said top surface during said epitaxial growth.3. The process according to claim 1 , wherein the removed surface portion of the epitaxial layer has a thickness between 100 nm and 500 nm.4. The process according to claim 3 , wherein said thickness is equal to 300 nm.5. The process according to claim 2 , wherein the removing the surface portion of the epitaxial layer includes carrying out Chemical Mechanical Polishing (CMP) of the top surface of the epitaxial layer.6. The process according to claim 5 , wherein said CMP is carried out ...

CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL

A crucible has a bottom and a cylindrical side surface. In the crucible, a source material is sublimated to grow a single crystal. The crucible includes a third region configured to receive a source material, a second region extending from the third region in a direction away from the bottom, and a first region extending from the second region in a direction away from the bottom. The crucible includes a first wall and a second wall inside the side surface. The first wall surrounds the first region, the second wall surrounds the second region. The crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface. The distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom. 1. A crucible for sublimating a source material to grow a single crystal , comprising:a bottom; anda cylindrical side surface,wherein the crucible includes a third region configured to receive the source materiala second region extending from the third region in a direction away from the bottom, anda first region extending from the second region in a direction away from the bottom,the crucible includes a first wall and a second wall inside the side surface, the first wall surrounding the first region, the second wall surrounding the second region,the crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface,a distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom, and a distance between horizontal opposite portions on the second wall increases as the horizontal opposite portions approach the bottom,an inclination angle α of the first wall with respect to a direction perpendicular to the bottom is smaller than an inclination angle β of the second wall with ...

FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0. 1. An induction furnace apparatus for growing semiconductor crystals by seeded sublimation growth , comprising:a quartz vacuum chamber;a cylindrical RF induction coil positioned coaxially with the quartz vacuum chamber;an RF power supply coupled to the RF induction coil;a reaction cell configured for containing a seed crystal and source material, the reaction cell defining an axial length measured as the reaction cell height along its axis of rotational symmetry;an arrangement of insulation layers around the cell configured for generating a thermal gradient inside the reaction cell;a support for placing the reaction cell inside the quartz vacuum chamber;wherein the RF induction coil is configured for generating a uniform electromagnetic field around the reaction cell when the reaction cell is positioned co-axially with the induction coil, coaxially to the quartz vacuum chamber, and near or at the center of the coil with respect to its axial length; and,wherein a ratio of height of the RE induction coil, measured along the axis of rotational symmetry, to the axial length of the reaction cell is from 2.5 to 4.0.2. (canceled)3. The apparatus of ...

Device and Method for Producing Silicon Carbide

The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre. 1. Device for continuously producing crystalline silicon carbide , comprising:a reactor; anda collection container at least partially spatially separated from the reactor, whereinthe reactor comprises a supply means for supplying a precursor mixture,a substrate for depositing crystalline silicon carbide is provided,{'sub': 1', '2', '1, 'a reaction chamber of the reactor can be tempered to a first temperature Tand the substrate can be tempered to a second temperature Twhich is different from the first temperature T, wherein the reactor can be heated to a temperature in a range of ≧1400° C. to ≦2000° C., and wherein the temperature of the substrate can be reduced by a temperature in a range of ≧50° C. to ≦100° C. compared to the temperature basically set in the reactor within the aforementioned range of ≧1400° C. to ≦2000° C., wherein'}the substrate for the deposition of crystalline silicon carbide can be disposed at a deposition position within or adjacent to the reaction chamber and at least area-wise be moved from the deposition position to the collection container, and whereina scraper is arranged such that after or during an at least area-wise movement of the substrate to the collection container crystalline silicon carbide deposited on the substrate can be removed by the scraper from the substrate and the removed crystalline silicon carbide can be transferred into the collection container.2. Device according to claim 1 , wherein the substrate is configured as a rotatable disc.3. Device according to claim 1 , wherein the scraper is disposed adjacent to a fall in opening of the collection container such that the crystalline silicon carbide removed from the substrate falls into the collection container.4. Device according to claim 1 , wherein the reactor and the collection container are constructed ...

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

System For Horizontal Growth Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value. 1. A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) , the system comprising:a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside, the reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.2. The system of claim 1 , wherein the angle from horizontal is between −15° and +15 with respect to a horizontal plane perpendicular to the direction of gravity claim 1 , and/or the reactor is horizontally oriented with respect to the gravity direction to accommodate the PVT growth structure.3. The system of claim 1 , wherein the PVT growth structure includes a source material compartment containing a source material and a pair of growth compartments each on a side of the source material compartment claim 1 , a crystal seed is disposed in each growth compartment and is at a certain distance along a longitudinal axis from the source material for growing respective single crystals from the source material claim 1 , the source material is selected for growing single crystals of a semiconductor material from a group including at least silicium carbide claim 1 , 4H-SiC ...

METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C. 1. A method of cleaning a SiC monocrystal growth furnace by using a gas to clean a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C—SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis , the method comprising:flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through an inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, whereinthe mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is at least 200° C. but not more than 500° C.2. The method of cleaning a SiC monocrystal growth furnace according to claim 1 , wherein the inert gas is selected from the group consisting of nitrogen gas claim 1 , argon gas and helium gas.3. The method of cleaning a SiC monocrystal growth furnace according to claim ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

A silicon carbide substrate includes: an n type drift layer having a first surface and a second surface opposite to each other; a p type body region provided in the first surface of the n type drift layer; and an n type emitter region provided on the p type body region and separated from the n type drift layer by the p type body region. A gate insulating film is provided on the p type body region so as to connect the n type drift layer and the n type emitter region to each other. A p type Si collector layer is directly provided on the silicon carbide substrate to face the second surface of the n type drift layer. 14.-. (canceled)5. A method for manufacturing a semiconductor device , comprising the steps of:forming a silicon carbide substrate having an n type single-crystal substrate made of silicon carbide and an n type drift layer provided thereon, by epitaxially growing silicon carbide on said n type single-crystal substrate while adding a donor type impurity thereto, said n type drift layer having first and second surfaces opposite to each other, said second surface facing said n type single-crystal substrate;forming a p type body region disposed in said first surface of said n type drift layer, and an n type emitter region disposed on said p type body region and separated from said n type drift layer by said p type body region;forming a gate insulating film on said p type body region so as to connect said n type drift layer and said n type emitter region to each other;forming a gate electrode on said gate insulating film;forming an emitter electrode in contact with each of said n type emitter region and said p type body region; andforming a p type Si collector layer facing said second surface of said n type drift layer, by depositing silicon on said silicon carbide substrate while adding an acceptor type impurity thereto.6. The method for manufacturing the semiconductor device according to claim 5 , further comprising the step of performing activation heat ...

SEMICONDUCTOR LAMINATE

A semiconductor laminate includes a silicon carbide substrate having a first main surface and a second main surface opposite the first main surface, and an epitaxial layer composed of silicon carbide disposed on the first main surface. The second main surface has an average value of roughness Ra of 0.1 μm or more and 1 μm or less with a standard deviation of 25% or less of the average value. 1. A semiconductor laminate comprising:a silicon carbide substrate having a first main surface and a second main surface opposite the first main surface; andan epitaxial layer composed of silicon carbide disposed on the first main surface,wherein the second main surface has an average value of roughness Ra of 0.1 μm or more and 1 μm or less with a standard deviation of 25% or less of the average value.2. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a bow of more than 0 μm and 10 μm or less when the first main surface is placed upward.3. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 75 mm or more.4. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 100 mm or more.5. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 150 mm or more.6. The semiconductor laminate according to claim 1 , wherein the semiconductor laminate has a diameter of 200 mm or more.7. The semiconductor laminate according to claim 1 , wherein the silicon carbide substrate and the silicon carbide epitaxial layer each contain an impurity that generates majority carriers claim 1 , anda concentration of the impurity in the silicon carbide substrate is higher than a concentration of the impurity in the epitaxial layer.8. The semiconductor laminate according to claim 2 , wherein the semiconductor laminate has a diameter of 75 mm or more.9. The semiconductor laminate according to claim 2 , wherein the semiconductor ...

SiC FILM STRUCTURE

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

SILICON CARBIDE STACKED SUBSTRATE AND MANUFACTURING METHOD THEREOF

In a silicon carbide stacked substrate, the efficiency of converting the basal plane dislocation (BPD) which is a fault to deteriorate the current-carrying reliability into a threading edge dislocation (TED) which is a harmless fault is improved, thereby improving the reliability of the silicon carbide stacked substrate. As means therefor, in a silicon carbide stacked substrate including a SiC substrate and a buffer layer and a drift layer which are epitaxial layers sequentially formed on the SiC substrate, a semiconductor layer having an impurity concentration lower than those of the SiC substrate and the buffer layer and higher than that of the drift layer is formed between the SiC substrate and the buffer layer so as to be in contact with an upper surface of the SiC substrate. 1. A silicon carbide stacked substrate comprising:a first substrate of a first conductivity type which is a hexagonal semiconductor substrate containing silicon carbide;a first semiconductor layer of the first conductivity type formed on the first substrate and containing silicon carbide;a second semiconductor layer of the first conductivity type formed on the first semiconductor layer and containing silicon carbide; anda third semiconductor layer of the first conductivity type formed on the second semiconductor layer and containing silicon carbide,wherein the first semiconductor layer is in contact with an upper surface of the first substrate, anda first impurity concentration of the first semiconductor layer is lower than any of a second impurity concentration of the second semiconductor layer and a fourth impurity concentration of the upper surface of the first substrate and is higher than a third impurity concentration of the third semiconductor layer, and the second impurity concentration is higher than the third impurity concentration.2. The silicon carbide stacked substrate according to claim 1 , wherein the first impurity concentration is higher than 1×10cmand 1×10cmor lower.3. The ...

SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide semiconductor device, including a semiconductor substrate having first and second epitaxial layers. The second epitaxial layer is formed on a first main surface of the semiconductor substrate, and includes first and second semiconductor regions, selectively provided in a surface layer of the second epitaxial layer respectively in the active region and the border region, and a third semiconductor region. The semiconductor device further includes a trench penetrating the first and third semiconductor regions to reach the first epitaxial layer, a gate electrode provided in the trench via a gate insulating film, a first electrode electrically connected to the first and third semiconductor regions, and a second electrode provided at a second main surface of the semiconductor substrate. The second semiconductor region is separate from the first semiconductor region. A portion of the third semiconductor region is exposed at the first main surface of the semiconductor substrate, between the first and second semiconductor regions. 1. A silicon carbide semiconductor device , includingan active region through which main current flows,a termination region surrounding a periphery of the active region, anda border region between the active region and the termination region, and surrounding the periphery of the active region,the silicon carbide semiconductor device comprising: a first epitaxial layer of a first conductivity type, and', a first semiconductor region of the first conductivity type, selectively provided in a surface layer of the second epitaxial layer, at a side of the first main surface, in the active region,', 'a second semiconductor region of the second conductivity type, selectively provided in the surface layer of the second epitaxial layer, at the side of the first main surface, in the border region, the second semiconductor region having an impurity concentration that is higher than that of the second epitaxial layer, and', 'a third ...

SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm. 112-. (canceled)13. A substrate having a front surface and a back surface , the back surface having a distorted crystal lattice , and at least a part of said front surface is composed of single crystal silicon carbide ,said substrate having an average value of surface roughness Ra at said front surface not greater than 0.5 nm and a standard deviation of said surface roughness Ra not greater than 0.2 nm, and an average value of surface roughness Ra at said back surface not smaller than 0.3 nm and not greater than 10 nm and a standard deviation of said surface roughness Ra not greater than 3 nm, and a diameter of said front surface not smaller than 110 mm.14. The substrate according to claim 13 , wherein{'sup': 19', '3, 'nitrogen is introduced in said single silicon carbide, and concentration of said nitrogen in said single crystal silicon carbide is not higher than 2×10/cm.'}15. The substrate according to claim 13 , wherein{'sup': 18', '3', '19', '3, 'nitrogen is introduced in said single silicon carbide, and concentration of said nitrogen in said single crystal silicon carbide is not lower than 4×10/cmand not higher than 2×10/cm ...

SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm. 112-. (canceled)13. A substrate having a front surface and a back surface , each of the front surface and the back surface having a processed-damaged layer having a distorted crystal lattice , and at least a part of said front surface is composed of single crystal silicon carbide ,said substrate having an average value of surface roughness Ra at said front surface not greater than 0.5 nm and a standard deviation of said surface roughness Ra not greater than 0.2 nm, and an average value of surface roughness Ra at said back surface not smaller than 0.3 nm and not greater than 10 nm and a standard deviation of said surface roughness Ra not greater than 3 nm, and a diameter of said front surface not smaller than 110 mm.14. The substrate according to claim 13 , wherein{'sup': 19', '3, 'nitrogen is introduced in said single silicon carbide, and concentration of said nitrogen in said single crystal silicon carbide is not higher than 2×10/cm.'}15. The substrate according to claim 14 , wherein{'sup': 18', '3', '19', '3, 'nitrogen is introduced in said single silicon carbide, and concentration of said nitrogen in said single crystal ...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container. 1. A method of manufacturing a silicon carbide single crystal , comprising the steps of:preparing a crucible having a first side and a second side opposite to said first side;arranging a solid source material for growing silicon carbide with a sublimation method, on said first side in said crucible;arranging a seed crystal made of silicon carbide on said second side in said crucible;arranging said crucible in a heat insulating container, said heat insulating container having an opening facing said second side of said crucible;heating said crucible such that said solid source material sublimes and recrystallizes on said seed crystal; andmeasuring a temperature on said second side of heated said crucible through said opening in said heat insulating container, said opening in said heat insulating container having a tapered inner surface narrowed toward outside of said heat insulating container.2. The method of manufacturing a silicon carbide single crystal according to claim 1 , whereina direction of normal of said tapered inner surface of said opening in said heat insulating container is inclined by not smaller than 120° and not greater than 170°, with respect to a direction from said first side of said crucible to said second side of said crucible.3. The method of manufacturing a silicon ...

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution. 1. A production method of an SiC single crystal by a solution growth process in which a principal surface of a seed crystal is arranged to face downward and brought into contact with an Si—C solution , thereby making an SiC single crystal grow on the principal surface , whereinthe principal surface is flat, andthe production method comprises:a contact step A of bringing a partial region of the principal surface into contact with a stored Si—C solution;a contact step B of leaving a contact region between the principal surface and the stored Si—C solution to expand, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A; anda growth step of making an SiC single crystal grow on the principal surface which is in contact with the stored Si—C solution.2. The production method according to claim 1 , whereinthe contact step A comprises:{'b': '1', 'i': 'a', 'a step A-of bringing the principal surface into contact with the stored Si—C solution, and thereafter detaching the principal surface from the stored Si—C solution, thereby leading to a state in which the Si—C solution adheres to a partial region of the principal surface; and'}{'b': '1', 'i': 'b', 'a step A-of bringing the Si—C solution having ...

Sic single crystal and method for producing same

A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a SiC single crystal from the (0001) face.

MANUFACTURING METHOD OF SILICON CARBIDE WAFER AND SEMICONDUCTOR STRUCTURE

A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided. 1. A manufacturing method of a silicon carbide wafer , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor; 'passing an argon gas into the reactor, wherein a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours;', 'reducing a nitrogen content in the reactor, comprisingheating the reactor and the raw material to form a silicon carbide material on the seed;cooling the reactor and the raw material to obtain a silicon carbide ingot; andcutting the silicon carbide ingot to obtain a plurality of silicon carbide wafers.2. The manufacturing method as described in claim 1 , wherein reducing the nitrogen content in the reactor comprises: before passing the argon gas into the reactor claim 1 , performing a first vacuum process on the reactor claim 1 , such that an air pressure in the reactor is 0.1 torr to 100 torr.3. The manufacturing method as described in claim 1 , wherein a resistivity of the silicon carbide ingot is 0.1 ohm/cm to 10 ohms/cm claim 1 , and a resistivity of each of the silicon carbide wafers is 0.1 ohm/cm to 10 ohms/cm.4. The ...

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer. 1. A silicon carbide wafer , wherein in the silicon carbide wafer , a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1 , and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.2. The silicon carbide wafer according to claim 1 , wherein in the silicon carbide wafer claim 1 , the nitrogen concentration is within a range of 10atom/cmto 9.9*10atom/cm claim 1 , and the vanadium concentration is within a range of 10atom/cmto 9*10atom/cm.3. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 10atom/cmto 5*10atom/cm claim 2 , and the vanadium concentration is within a range of 10atom/cmto 3.5*10atom/cm.4. The silicon carbide wafer according to claim 2 , wherein in the silicon carbide wafer claim 2 , the nitrogen concentration is within a range of 5*10atom/cmto 7*10atom/cm claim 2 , and the vanadium concentration is within a range of 3.5*10atom/cmto 5*10atom/cm.5. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 4.5:1 to 10:1 claim 1 , and the portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 90% of the entire wafer area of the silicon carbide wafer.6. The silicon carbide wafer according to claim 1 , wherein the ratio (V:N) of the vanadium concentration to the nitrogen concentration is in a range of 7:1 to 10:1 claim 1 ...

High Purity SiOC and SiC, Methods Compositions and Applications

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. 136-. (canceled)37. A method of making an article comprising ultra pure silicon carbide , the method comprising:a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon;b. curing the combination of the first and second liquids to provide a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen;c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.999%; and,d. forming a single crystal SiC structure, comprising a polytype selected from the group consisting of 4H SiC, 6H SiC and 3C SiC, by vapor deposition of the ultra pure polymer derived SiC; wherein the vapor deposed structure is defect free and has a purity of at least 99.9999%.38. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 4H SiC.39. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 6H SiC.40. The method of claim 37 , wherein the single crystal SiC structure consists of 4H SiC.41. The method of claim 37 , wherein the single crystal SiC structure consists of 6H SiC.42. The method of claim 37 , wherein the combination of the first and the second liquids is a polysilocarb precursor formulation having a molar ratio of about 30% to 85% carbon claim 37 , about 5% to 40% oxygen claim 37 , and about 5% to 35% silicon.43. The method of claim 37 , wherein the single crystal SiC structure is a boule.44. The method of claim 37 , wherein the single crystal SiC is a layer.45. The method of claim 37 , wherein the single ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view. 13-. (canceled)4. A method for manufacturing a silicon carbide single crystal in which a growth container is surrounded by a heat-insulating material with a hole for temperature measurement provided in a top portion thereof , a seed crystal substrate is disposed at a center of an upper portion inside the growth container , a silicon carbide raw material is disposed at a lower portion of the growth container , and the silicon carbide raw material is sublimated to grow a silicon carbide single crystal on the seed crystal substrate , whereinto allow a position of a center of the hole for temperature measurement in the heat-insulating material to deviate from a position of a center of the seed crystal substrate disposed inside the growth container, the hole for temperature measurement is provided to deviate to a position on a periphery side relative to the center of the seed crystal substrate disposed inside the growth container,a silicon carbide single crystal substrate having a main surface tilted by an off angle from a {0001} plane which is a basal plane is used as the seed ...

SILICON CARBIDE EPITAXIAL GROWTH DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved. 1. A silicon carbide epitaxial growth device comprising:a wafer holder on which a silicon carbide substrate is mounted;a turntable on which the wafer holder is mounted;a susceptor covering the silicon carbide substrate and the wafer holder, and into which a growth gas, a doping gas, and a carrier gas are supplied;induction heating coils provided around the susceptor, anda tantalum carbide member mounted on a peripheral edge portion in an upper portion of the wafer holder and outside of the silicon carbide substrate.2. The silicon carbide epitaxial growth device according to claim 1 , whereinthe tantalum carbide member includes a tantalum carbide layer as a surface layer thereof which is formed from a carbon material, the tantalum carbide member being replaceable.3. The silicon carbide epitaxial growth device according to claim 1 , whereinthe tantalum carbide member has a shape extending along an outer peripheral of the wafer holder which is on outside of the silicon carbide substrate.4. The silicon carbide epitaxial growth device according to claim 1 , whereinthe wafer holder has a step shape at a peripheral edge portion thereof and the tantalum carbide member is mounted at a step of the peripheral edge portion of the wafer holder.5. A method of manufacturing a silicon carbide epitaxial wafer comprising:carrying a wafer holder loaded with a silicon carbide substrate and a ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis <0001>. 1 a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container; and', 'a convex-shaped end face of a grown ingot as a crystal growth surface, and, 'a substrate used as the seed crystal substrate comprisesa diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container.. A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate, wherein The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those using semiconductor Si crystal.As a typical and practical method for growing a crystal with a high melting point or a crystal that is difficult to grow by liquid phase growth such as SiC ...

METHOD FOR MANUFACTURING SINGLE-CRYSTAL SiC, AND HOUSING CONTAINER

Provided is a method for producing high-purity SiC single crystal, which is applicable to a process of growing SiC single crystal through a solution growth method. This method is for producing SiC single crystal and includes growing, through a solution growth method, an epitaxial layer on a seed material, at least a surface of which is made of SiC, wherein the SiC single crystal is grown so that impurity concentrations therein measured by secondary ion mass spectrometry are very small. Also provided is a housing container for growing SiC single crystal through a solution growth method using a Si melt, including a feed material that is disposed on at least a surface of the housing container and adds, to the Si melt, an additional material that is SiC and/or C. Performing the solution growth method using this housing container can produce high-purity SiC single crystal without any special treatment. 1. A method for producing silicon carbide single crystal , comprising:growing, through a solution growth method, an epitaxial layer on a seed material, at least a surface of which is made of silicon carbide, whereinthe epitaxial layer is grown to yield silicon carbide single crystal whose impurity concentrations measured by secondary ion mass spectrometry satisfy the following conditions:{'sup': 16', '3, '4.00×10or less (atoms/cm) of aluminum;'}{'sup': 14', '3, '3.00×10or less (atoms/cm) of titanium;'}{'sup': 15', '3, '7.00×10or less (atoms/cm) of chromium; and'}{'sup': 15', '3, '1.00×10or less (atoms/cm) of iron.'}2. The method according to claim 1 , whereinthe impurity concentrations in the silicon carbide single crystal further satisfy the following conditions:{'sup': 13', '3, '2.00×10or less (atoms/cm) of sodium;'}{'sup': 14', '3, '1.00×10or less (atoms/cm) of phosphorus;'}{'sup': 14', '3, '1.00×10or less (atoms/cm) of calcium;'}{'sup': 12', '3, '1.00×10or less (atoms/cm) of vanadium;'}{'sup': 14', '3, '5.00×10or less (atoms/cm) of nickel; and'}{'sup': 14', '3, '2.00× ...

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

Provided is a method of manufacturing a silicon carbide epitaxial wafer appropriate for suppressing an occurrence of a triangular defect. A method of manufacturing a silicon carbide epitaxial wafer includes: an etching process of etching a surface of a silicon carbide substrate at a first temperature using etching gas including H; a process of flattening processing of flattening the surface etched in the etching process, at a second temperature using gas including Hgas, first Si supply gas, and first C supply gas; and an epitaxial layer growth process of performing an epitaxial growth on the surface flattened in the process of flattening processing, at a third temperature using gas including second Si supply gas and second C supply gas, wherein the first temperature T, the second temperature T, and the third temperature Tsatisfy T>T>T. 1. A method of manufacturing a silicon carbide epitaxial wafer , comprising:{'sub': '2', 'etching a surface of a silicon carbide substrate at a first temperature using etching gas including H;'}{'sub': '2', 'flattening the surface etched by the etching, at a second temperature using gas including Hgas, first Si supply gas, and first C supply gas; and'}performing an epitaxial growth on the surface flattened by the flattening, at a third temperature using gas including second Si supply gas and second C supply gas, wherein{'sub': 1', '2', '3', '1', '2', '3, 'the first temperature T, the second temperature T, and the third temperature Tsatisfy T>T>T,'}2. The method of manufacturing the silicon carbide epitaxial wafer according to claim 1 , whereinthe first Si supply gas and the second Si supply gas are identical Si supply gas, andthe first C supply gas and the second C supply gas are identical C supply gas.3. The method of manufacturing the silicon carbide epitaxial wafer according to claim 2 , wherein{'sub': 4', '3', '8, 'the first Si supply gas is SiHgas, and the first C supply gas CHgas.'}4. The method of manufacturing the silicon ...

Bonding wafer structure and method of manufacturing the same

A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded onto the bonding layer, in which a carbon surface of the SiC layer is in direct contact with the bonding layer. The SiC layer has a basal plane dislocation (BPD) of 1,000 ea/cm 2 to 20,000 ea/cm 2 , a total thickness variation (TTV) greater than that of the support substrate, and a diameter equal to or less than that of the support substrate. The bonding wafer structure has a TTV of less than 10 μm, a bow of less than 30 μm, and a warp of less than 60 μm.

Silicon Based Fusion Composition and Manufacturing Method of Silicon Carbide Single Crystal Using the Same

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): 1. A silicon fusion composition for a solution growth method for forming a silicon carbide single crystal , comprising:silicon, a first metal (M1), scandium (Sc) and aluminum (Al), [{'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1., 'as represented by the following Formula 12. The silicon fusion composition of claim 1 , wherein:the first metal (M1) is one or more selected from the group consisting of titanium (Ti), chromium (Cr), vanadium (V), yttrium (Y), manganese (Mn), iron (Fe), cobalt (Co), boron (B), cerium (Ce), lanthanum (La) and praseodymium (Pr).3. The silicon fusion composition of claim 1 , wherein:in Formula 1, a is more than 0.5 and less than 0.7, b is more than 0.2 and less than 0.4, and d is more than 0.01 and less than 0.05.4. The silicon fusion composition of claim 1 , wherein:the silicon fusion composition has a carbon solubility of 5% or more.5. A silicon fused solution claim 1 , comprising: the silicon fusion composition of and carbon claim 1 , wherein the scandium increases a carbon solubility in the silicon fused solution.6. A manufacturing method of a silicon carbide single crystal comprising:preparing a silicon carbide seed crystal; {'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'preparing a silicon fusion composition comprising: silicon (Si), a first metal (M1), scandium (Sc) and aluminum (Al), as represented by the following Formula 1;'}wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6 m c us nire than 0.01 and less than 0.1, and d is ...

Method for evaluating quality of sic single crystal body and method for producing silicon carbide single crystal ingot using the same

A method for evaluating the quality of a SiC single crystal by a non-destructive and simple method; and a method for producing a SiC single crystal ingot with less dislocation and high quality with good reproducibility utilizing the same. The method for evaluating the quality of a SiC single crystal body is based on the graph of a second polynomial equation obtained by differentiating a first polynomial equation, the first polynomial equation approximating the relation between a peak shift value and a position of the measurement point and the peak shift value being obtained by an X-ray rocking curve measurement. The method for producing a SiC single crystal ingot manufactures a SiC single crystal ingot by a sublimation recrystallization method using, as a seed crystal, the SiC single crystal body evaluated by the evaluation method.

SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL

The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft. 1. A seed crystal holding shaft to be used in a single crystal production device employed in a solution process , whereinat least a portion of the side face of the seed crystal holding shaft is covered with a reflector member having higher reflectance than the reflectance of the seed crystal holding shaft, andthe reflector member is disposed so as to leave a gap between the reflector member and the seed crystal held on the end face of the seed crystal holding shaft.2. The seed crystal holding shaft according to claim 1 , wherein at least 50% of the side face of the seed crystal holding shaft is covered by the reflector member.3. The seed crystal holding shaft according to claim 1 , wherein the reflectance of the reflector member is 0.4 or greater.4. The seed crystal holding shaft according to claim 1 , wherein the reflector member is a carbon sheet.5. The seed crystal holding shaft according to claim 4 , wherein the average thickness of the carbon sheet is 0.05 mm or greater.6. The seed crystal holding shaft according to claim 1 , wherein the seed crystal holding shaft is made of graphite.7. A method for producing a SiC single crystal by a solution process in which a SiC seed crystal held on a ...

SILICON CARBIDE CRYSTAL GROWTH IN A CVD REACTOR USING CHLORINATED CHEMISTRY

A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method. 1. A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber , wherein the reaction chamber is heated to a temperature in the region 1600° C. to 2000° C. , the method comprising:entering process gases into the reaction chamber by use of at least three gas flows, a primary gas flow, a secondary gas flow surrounding the primary gas flow, and a shower gas flow, wherein said primary and secondary gas flows stream substantially parallel to the surface of the substrate, and where the shower gas flow is fed substantially perpendicularly to the primary and the secondary gas flows and being directed towards the substrate,a chlorine containing silicon precursor gas is entered into the reaction chamber utilizing the primary gas flow together with a carrier gas, and optionally together with an amount of HCl,a hydrocarbon precursor gas is entered into the reaction chamber according to one of the following alternatives:together with the chlorine containing silicon precursor gas and a small flow ratio x of hydrogen in the primary flow,together with a flow ratio y of hydrogen, and ...

EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer. 1. A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer , the method including:epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; andepitaxially growing the voltage-blocking-layer on the buffer layer.2. The method according to claim 1 , wherein the main dopant is doped at a doping concentration equal to or greater than 1.0×10cmand less than 1.0×10cm.3. The method according to claim 2 , wherein the buffer layer is implemented with a thickness equal to or greater than 0.1 micrometer ...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide epitaxial substrate includes: a silicon carbide single crystal substrate; a first silicon carbide layer on the silicon carbide single crystal substrate, the first silicon carbide layer having a first concentration of carriers; and a second silicon carbide layer on the first silicon carbide layer, the second silicon carbide layer having a second concentration of carriers. A transition region in which the concentration of the carriers is changed between the first concentration and the second concentration has a width of less than or equal to 1 μm. A ratio of a standard deviation of the second concentration to an average value of the second concentration is less than or equal to 5%, the ratio being defined as uniformity of the second concentration in a central region. The central region has an arithmetic mean roughness of less than or equal to 0.5 nm. 1. A silicon carbide epitaxial substrate comprising:a silicon carbide single crystal substrate having a first main surface;a first silicon carbide layer on the silicon carbide single crystal substrate, the first silicon carbide layer having a first concentration of carriers; anda second silicon carbide layer on the first silicon carbide layer, the second silicon carbide layer having a second concentration of carriers smaller than the first concentration, the second silicon carbide layer including a second main surface opposite to the first main surface,in a concentration profile of the carriers along a layering direction in which the first silicon carbide layer and the second silicon carbide layer are layered, a transition region in which the concentration of the carriers is changed between the first concentration and the second concentration having a width of less than or equal to 1 μm,a ratio of a standard deviation of the second concentration to an average value of the second concentration being less than or equal to 5%, the ratio being defined as uniformity of the second concentration in a central ...

METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

A method for manufacturing a compound semiconductor device includes causing epitaxial growth of a p-type impurity layer containing a compound semiconductor on a foundation layer containing the compound semiconductor. The causing the epitaxial growth includes performing pre-doping to preliminarily introduce dopant gas before introducing material gas for the epitaxial growth of the compound semiconductor. The dopant gas contains an organic metal material providing dopant of p-type impurities. An impurity concentration profile of the p-type impurity layer is controlled by controlling a time of the pre-doping. 1. A method for manufacturing a compound semiconductor device , the method comprisingcausing epitaxial growth of a p-type impurity layer containing a compound semiconductor on a foundation layer containing the compound semiconductor, whereinthe causing the epitaxial growth includes performing pre-doping to preliminarily introduce dopant gas before introducing material gas for the epitaxial growth of the compound semiconductor,the dopant gas contains an organic metal material providing dopant of p-type impurities, andan impurity concentration profile of the p-type impurity layer is controlled by controlling a time of the pre-doping.2. The method for manufacturing the compound semiconductor device according to claim 1 , whereinin the causing the epitaxial growth, the pre-doping is performed to maximize an impurity concentration of the p-type impurity layer in an initial stage of the epitaxial growth.3. The method for manufacturing the compound semiconductor device according to claim 2 , whereinin the causing the epitaxial growth, an introduction quantity of the dopant gas in the pre-doping is increased than an introduction quantity of the dopant gas after the introducing of the material gas to maximize the impurity concentration of the p-type impurity layer in the initial stage of the epitaxial growth.4. The method for manufacturing the compound semiconductor device ...

SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×10cm. 1. A silicon carbide substrate comprising:a substrate inner portion; anda substrate outer portion surrounding the substrate inner portion, wherein{'sup': 16', '−3, 'a non-dopant metal impurity concentration of the substrate inner portion is 1×10cmor more, and'}{'sup': 16', '−3, 'a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×10cm.'}2. The silicon carbide substrate according to claim 1 , wherein{'sup': '31 2', 'average threading screw dislocation density in the substrate surface region is 100 cmor less.'}3. The silicon carbide substrate according to claim 1 , whereinthe non-dopant metal impurity concentration has distribution in a thickness direction of the substrate inner portion or a direction perpendicular to the thickness direction.4. The silicon carbide substrate according to claim 1 , whereinthe non-dopant metal impurity concentration has distribution in a thickness direction of the substrate surface region or a direction perpendicular to the thickness direction.5. The silicon carbide substrate according to claim 1 , whereinan impurity concentration of the substrate inner portion is set so that the substrate inner portion has a ...

Thermal conductivity estimation method, thermal conductivity estimation apparatus, production method for semiconductor crystal product, thermal conductivity calculator, thermal conductivity calculation program, and, thermal conductivity calculation method

A thermal conductivity estimation method includes: measuring temperature distribution of a measurement sample surface in a steady state by partially heating the measurement sample under predetermined heating conditions; calculating temperature distribution of a sample model surface by performing a heat-transfer simulation on the sample model of the same shape as the measurement sample for a plurality of combinations of provisional thermal conductivities and heating conditions; making a regression model, whose input is temperature distribution of the measurement sample surface and whose output is a thermal conductivity of the measurement sample, by a machine learning technique using training data in a form of a calculation result of the plurality of combinations and the temperature distribution obtained from the plurality of combinations; and estimating the thermal conductivity of the measurement sample by inputting a measurement result of the temperature distribution of the measurement sample surface into the regression model.

METHOD FOR PRODUCING CRYSTAL

A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step. 1. A method for producing a crystal of silicon carbide , the method comprising:a preparation step of preparing a solution in which carbon is dissolved in a silicon solvent, and preparing a seed crystal of silicon carbide;a contact step of bringing a lower surface of the seed crystal into contact with the solution;a start step of starting to grow a crystal from the lower surface of the seed crystal by heating the solution to a temperature in a first temperature range;a first growth step of growing the crystal after the start step by pulling up the seed crystal upward while the solution is heated from the temperature in the first temperature range to a temperature in a second temperature range;a cooling step of cooling the solution from the temperature in the second temperature range to any one of the temperatures in the first temperature range; anda second growth step of further growing the crystal after the cooling step by pulling up the seed crystal upward while the solution is heated from the temperature in the first temperature range to any one of the temperatures in the second temperature range.2. The method according to claim 1 , whereinthe cooling step and the second growth step are each repeated.3. The method according to claim 1 , whereinthe crystal is detached from the solution in the cooling step.4. The method according to claim 1 , whereinthe solution is cooled in the cooling step keeping the crystal in contact with the solution.5. The method according to claim 1 , whereina silicon raw material is added to the solution in the cooling step.6. The method according to claim 1 , whereinthe solution is heated in the first growth step to a temperature in the second temperature range from a temperature in the first temperature range keeping a degree of supersaturation of carbon in the ...

SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer. 1. An SiC epitaxial wafer comprising an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane ,wherein a trapezoidal defect included in the SiC epitaxial wafer comprises an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow.2. The SiC epitaxial wafer according to claim 1 , wherein a ratio of the inverted trapezoidal defect in the trapezoidal defect is 50% or more.3. The SiC epitaxial wafer according to claim 1 , wherein the inverted trapezoidal defect comprises an inverted trapezoidal defect having a length of the lower base on the downstream side of the step flow of 0 and a triangular shape.4. A method for manufacturing an SiC epitaxial wafer which is a method for manufacturing the SiC epitaxial wafer according to claim 1 , the method comprising:an etching step for etching an SiC single crystal substrate; andan epitaxial growth step for growing an epitaxial layer on the SiC single crystal substrate after etching,wherein in the epitaxial growth step, a concentration ratio C/Si of a Si-based source gas and a C-based source gas is set to 1.0 or less.5. The method for manufacturing an SiC epitaxial wafer according to claim 4 , wherein a temperature in the epitaxial growth step is set to 1 claim 4 ,630° C. or less.6. The method for manufacturing ...

Carbon and/or Nitrogen Incorporation in Silicon Based Films Using Silicon Precursors With Organic Co-Reactants by PE-ALD

Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

VERTICAL JFET MADE USING A REDUCED MASK SET

A vertical JFET made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions simultaneously. A mask-less self-aligned process is used to form silicide source and gate contacts. A second mask is used to open windows to the contacts. A third mask is used to pattern overlay metallization. An optional fourth mask is used to pattern passivation. Optionally the channel may be doped via angled implantation, and the width of the trenches and mesas in the active cell region may be varied from those in the termination region. 1. A process for creating a vertical SiC JFET with regions of a first doping type and regions of a second doping type , comprising:a. starting with a SiC wafer of the second doping type, the wafer comprising a middle drift region and a bottom drain connection region;b. adding to the wafer a top layer of the second doping type to be used as a source region;c. using a first mask to apply a patterned hard masking layer to the top of the wafer;d. etching trenches in a region to be used as an active device region and in a region to be used as a termination region;e. implanting the trench bottoms with the second doping type via vertical implantation and implanting the trench sides with the second doping type via angled implantation;f. creating oxide spacers on the trench walls via creating oxide through growth and/or deposition, followed by etching back;g. creating gate and source contacts via depositing ohmic metal, heating to form silicides where the deposited metal is in contact with SiC, and etching away unreacted metal;h. creating inter-layer dielectric via oxide deposition and using a second mask to create windows in the inter-layer dielectric to reach gate and source contacts;i. creating top metallization via deposition and patterning using a third mask; andj. creating a backside drain contact via backside processes.2. The process of claim 1 , further comprising:after creating ...

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Provided is an SiC-monocrystal growth crucible that includes, at the interior thereof, a monocrystal installation part and a raw-material installation part, and that serves as a crucible for obtaining an SiC monocrystal by means of sublimation, wherein the gas permeability of a first wall of the crucible, which surrounds at least a portion of a first region positioned closer to the raw-material installation part relative to the monocrystal installation part, is lower than the gas permeability of a second wall of the crucible, which surrounds at least a portion of a second region positioned on the opposite side from the raw-material installation part relative to the monocrystal installation part. 1. A crucible for growing a SiC single crystal which is a crucible for obtaining a SiC single crystal by a sublimation method ,the crucible comprising, in an interior thereof:a single crystal setting section; anda raw material setting section,wherein a gas permeability of a first wall of said crucible surrounding at least a part of a first region located on said raw material setting section side with reference to said single crystal setting section is lower than a gas permeability of a second wall of said crucible surrounding at least a part of a second region located on an opposite side of said raw material setting section with reference to said single crystal setting section.2. The crucible for growing a SiC single crystal according to claim 1 , wherein a gas permeability of said first wall is 90% or less of a gas permeability of said second wall.3. The crucible for growing a SiC single crystal according to either claim 1 , wherein a part of said first wall comprises a gas shielding member.4. The crucible for growing a SiC single crystal according to claim 3 , wherein said gas shielding member is provided inside or on an outer periphery of said first wall.5. The crucible for growing a SiC single crystal according to either claim 3 , wherein said gas shielding member is any ...

MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide substrate () is positioned such that a principal surface of the silicon carbide substrate () is parallel to a plurality of injection holes () of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes () to epitaxially grow a silicon carbide epitaxial growth layer () on the principal surface of the silicon carbide substrate (). The source gas fed from the plurality of injection holes () is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate () is greater than 1 m/sec. 1. A manufacturing method for a silicon carbide epitaxial wafer comprising:positioning a silicon carbide substrate such that a principal surface of the silicon carbide substrate is parallel to a plurality of injection holes of a horizontal CVD apparatus arranged in a row; andan epitaxial growth step of feeding source gas and carrier gas from the plurality of injection holes to epitaxially grow a silicon carbide epitaxial growth layer on the principal surface of the silicon carbide substrate,wherein the source gas and the carrier gas fed from the plurality of injection holes is divided into a plurality of system lines and controlled individually by separate mass flow controllers,the plurality of system lines includes a first system line and a second system line,a total flow rate of the source gas fed from one of the injection holes connected to the first system line is different from a total flow rate of the source gas fed from one of the injection holes connected to the second system line,flow rates of the source gas and the carrier gas are adjusted in accordance with a number of the injection holes for each of the system lines so that the flow rates of the source gas and the carrier gas fed from the plurality of injection holes in the epitaxial growth step is uniform, anda flow rate of the source gas ...

Seed crystal holder, crystal growing device, and crystal growing method

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

METHOD, APPARATUS, AND SYSTEM HAVING SUPER STEEP RETROGRADE WELL WITH ENGINEERED DOPANT PROFILES

Generally, in one embodiment, the present disclosure is directed to a method for forming a transistor. The method includes: implanting a substrate to form at least one of an n and p doped region; depositing an epitaxial semiconductor layer over the substrate; forming trenches through the epitaxial layer and partially through at least one of an n and p doped region; forming dielectric isolation regions in the trenches; forming a fin in an upper portion of the epitaxial semiconductor layer by partially recessing the dielectric isolation regions; forming a gate dielectric adjacent at least two surfaces of the fin; and diffusing dopant from at least one of the n and p doped regions at least partially into the epitaxial semiconductor layer to form a diffusion doped transition region adjacent a bottom portion of the fin. 1. A method for forming a transistor , comprising:implanting a substrate to form at least one of an n and p doped region;depositing an epitaxial semiconductor layer over the substrate;forming trenches through the epitaxial layer and partially through at least one of an n and p doped region;forming dielectric isolation regions in the trenches;forming a fin in an upper portion of the epitaxial semiconductor layer by partially recessing the dielectric isolation regions;forming a gate dielectric adjacent at least two surfaces of the fin; anddiffusing dopant from at least one of the n and p doped regions at least partially into the epitaxial semiconductor layer to form a diffusion doped transition region, wherein the diffusion doped transition region adjacent a bottom portion of the fin has a higher dopant concentration than the diffusion doped transition region adjacent the at least one of the n and p doped region.2. The method of claim 1 , further comprising depositing a dopant diffusion inhibiting material intermediate the substrate and the epitaxial semiconductor layer.3. The method of claim 2 , wherein depositing the dopant diffusion inhibiting material ...

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide single crystal substrate has a first main surface. The silicon carbide layer is on the first main surface. The silicon carbide layer includes a second main surface opposite to a surface thereof in contact with the silicon carbide single crystal substrate. The second main surface has a maximum diameter of more than or equal to 100 mm. The second main surface includes an outer peripheral region which is within 3 mm from an outer edge of the second main surface, and a central region surrounded by the outer peripheral region. The central region has a haze of less than or equal to 75 ppm.

SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER, SIC DEVICE, AND POWER CONVERSION APPARATUS

A SiC substrate () has an off angle θ°. A SiC epitaxial layer () having a film thickness of Tm μm is provided on the SiC substrate (). Triangular defects () are formed on a surface of the SiC epitaxial layer (). A density of triangular defects () having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular () defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied. 1. A SiC epitaxial wafer comprising:a SiC substrate having an off angle θ°; anda SiC epitaxial layer provided on the SiC substrate and having a film thickness of Tm μm,wherein triangular defects are formed on a surface of the SiC epitaxial layer,a density of triangular defects having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A,a density of triangular defects having a length shorter than Tm/Tan θ×0.9 in the substrate off direction is denoted by B, andB/A≤0.5 is satisfied.2. The SiC epitaxial wafer according to claim 1 , wherein the density B of the triangular defects is 0.5/cmor less.3. The SiC epitaxial wafer according to claim 1 , wherein the film thickness Tm of the SiC epitaxial layer is 30 μm or more.4. The SiC epitaxial wafer according to claim 1 , wherein a density of triangular defects shorter than Tm/Tan θ×0.5 is denoted by C claim 1 , and C/A≤0.2 is satisfied.5. The SiC epitaxial wafer according to claim 1 , wherein the SiC epitaxial layer includes two or more layers.6. A method for manufacturing the SiC epitaxial wafer according to claim 1 , comprising:placing the SiC substrate on a wafer holder and accommodating the SiC substrate placed on the wafer holder in a susceptor; andsupplying a source gas to grow the SiC epitaxial layer on the SiC substrate.7. The method for manufacturing the SiC epitaxial wafer according to claim 6 , wherein a temperature of the susceptor at a portion directly above the SiC substrate is higher than a temperature of the ...

SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS

Implementations of a method of separating a wafer from a boule including semiconductor material may include: creating a damage layer in a boule comprising semiconductor material. The boule may have a first end and a second end. The method may include cooling the first end of the boule and heating the second end of the boule. A thermal gradient may be formed between the cooled first end and the heated second end. The thermal gradient may assist a silicon carbide wafer to separate from the boule at the damage layer. 1. A method of separating a wafer from a boule comprising a semiconductor material , the method comprising:creating a damage layer in a boule comprising semiconductor material, wherein the boule has a first end and a second end; andcooling the first end of the boule;wherein a thermal gradient between the first end and the second end assists a silicon carbide wafer to separate from the boule at the damage layer.2. The method of claim 1 , wherein the damage layer is created through laser irradiation.3. The method of claim 1 , further comprising heating the second end of the boule.4. The method of claim 3 , wherein heating the second end of the boule comprises applying pulses of heat using a heating chuck.5. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.6. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.7. The method of claim 3 , further comprising placing the second side of the boule on a heating chuck and one of peeling claim 3 , prying claim 3 , and twisting the first end of the boule with a grip while applying heat to the second side of the boule.8. A method of separating a wafer from a boule of silicon carbide claim 3 , the method comprising:creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;applying a ...

SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER

In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density. 1. A SiC wafer , whereina difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.2. The SiC wafer according to claim 1 ,wherein the numbers of the threading dislocations of the first surface and the second surface are substantially the same.3. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein a density of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface is 1.5 threading dislocations/mmor less.'}4. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein the difference between the threading dislocation density exposed on the first surface and the threading dislocation density exposed on the second surface is 0.02 threading dislocations/mmor less.'}5. A manufacturing method of a SiC wafer claim 1 , comprising:{'sup': '2', 'a preparation step of producing a seed crystal ...