Noncontacting measurement of hall effect in a wafer
Номер патента: CA1129002A
Опубликовано: 03-08-1982
Автор(ы): David A.H. Robinson, Gabriel L. Miller
Принадлежит: Western Electric Co Inc
Опубликовано: 03-08-1982
Автор(ы): David A.H. Robinson, Gabriel L. Miller
Принадлежит: Western Electric Co Inc
Реферат: NONCONTACTING MEASUREMENT OF HALL EFFECT IN A WAFER Abstract of the Disclosure The magnitude and sign of the Hall angle of the material of a wafer are measured by a combined capacitive and inductive coupling technique which does not require physically contacting the wafer. Contacting methods in common use introduce surface damage or contamination which may reduce the yield of microelectronic circuits on semi-conductor wafers and normally in addition require special sample geometries. In this technique an rf signal is applied to a pair of concentric circular planar electrodes adjacent to the wafer, thus capacitively coupling a radial rf current into the wafer. A magnetic field applied perpendicular to the wafer produces a circular component of rf current because of the Hall effect. This circular rf current produces an axial rf magnetic field which couples to a pickup coil. The pickup signal is amplified and detected to produce an output signal related to the sign and magnitude of the Hall angle of the wafer material.
Hall-effect measurement apparatus
Номер патента: US09689935B2. Автор: Ming-Cheng Lin,Che-Hung Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-27.