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Semiconductor device gate spacer structures and methods thereof

Номер патента: US11664442B2
Опубликовано: 30-05-2023
Автор(ы): Chen-Chiu Huang, Chun-Chang Liu, Fu-Peng Lu, Kuo-Chang Huang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Номер патента: US20200365407A1. Автор: Bo-Yu Yang,Juei-Nai Kwo,Ming-Hwei Hong,Hsien-Wen WAN,Keng-Yung Lin,Yen-Hsun Lin. Владелец: National Taiwan University NTU. Дата публикации: 2020-11-19.

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Номер патента: US20220328306A1. Автор: Yu-Yun Peng,Guan-Yao TU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-13.

Multilayer structure and semiconductor device

Номер патента: US20220140145A1. Автор: Yasushi Higuchi,Osamu Imafuji,Yusuke Matsubara,Takashi Shinohe,Mitsuru Okigawa. Владелец: Flosfia Inc. Дата публикации: 2022-05-05.

TFT substrate structure and manufacturing method thereof

Номер патента: US09728647B2. Автор: Yue Wu. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-08-08.

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Номер патента: US20230369460A1. Автор: Chun-Wei Yu,Shao-Wei Wang,Wei-Chung Sun,Kuang-Hsiu Chen,Kuan Hsuan Ku,Chao Nan Chen. Владелец: United Microelectronics Corp. Дата публикации: 2023-11-16.

Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof

Номер патента: US9093328B2. Автор: Shunpei Yamazaki,Hiroyuki Miyake,Jun Koyama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2015-07-28.

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Номер патента: US20170092766A1. Автор: Lee Byeong-Chan,Kim Seok-Hoon,Lee Kwan-heum,Kim Jin-Bum,JUNG Su-Jin,Lee Cho-eun. Владелец: . Дата публикации: 2017-03-30.

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Номер патента: US20160308052A1. Автор: Lee Byeong-Chan,Kim Seok-Hoon,Lee Kwan-heum,Kim Jin-Bum,JUNG Su-Jin,Lee Cho-eun. Владелец: . Дата публикации: 2016-10-20.

Superjunction Semiconductor Device with Oppositely Doped Semiconductor Regions Formed in Trenches and Method of Manufacturing

Номер патента: US20170092717A1. Автор: Hirler Franz,Meiser Andreas. Владелец: . Дата публикации: 2017-03-30.

Semiconductor device having floating body device and bulk body device and methods of fabricating the same

Номер патента: KR100843717B1. Автор: 박동건,오창우. Владелец: 삼성전자주식회사. Дата публикации: 2008-07-04.

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Номер патента: US20170141215A1. Автор: LIU Chi-Wen,Tsai Ching-Wei,Ching Kuo-Cheng,Leung Ying-Keung. Владелец: . Дата публикации: 2017-05-18.

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Номер патента: US20190148526A1. Автор: LIU Chi-Wen,Tsai Ching-Wei,Ching Kuo-Cheng,Leung Ying-Keung. Владелец: . Дата публикации: 2019-05-16.

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Номер патента: US20180190796A1. Автор: LIU Chi-Wen,Tsai Ching-Wei,Ching Kuo-Cheng,Leung Ying-Keung. Владелец: . Дата публикации: 2018-07-05.

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Номер патента: US20190214498A1. Автор: Kang Sungkwan,Park Keum Seok,Lee Byeongchan,Kang Sangbom,Kim Nam-Kyu. Владелец: . Дата публикации: 2019-07-11.

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Номер патента: US20170278967A1. Автор: Kang Sungkwan,Park Keum Seok,Lee Byeongchan,Kang Sangbom,Kim Nam-Kyu. Владелец: . Дата публикации: 2017-09-28.

Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same

Номер патента: US20060252281A1. Автор: Seung-Hwan Lee,Han-mei Choi,Ki-yeon Park,Kyoung-Ryul Yoon,Dae-Sik Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-11-09.

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Номер патента: US7560349B2. Автор: Seung-Hwan Lee,Han-mei Choi,Ki-yeon Park,Kyoung-Ryul Yoon,Dae-Sik Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-07-14.

Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein and methods of forming same

Номер патента: WO1996015557A1. Автор: Bantval Jayant Baliga. Владелец: North Carolina State University. Дата публикации: 1996-05-23.

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Номер патента: US20230114351A1. Автор: Yen-Ming Chen,Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Jung-Chien Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-13.

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Номер патента: US20240347625A1. Автор: Chia-Hao Chang,Hai-Ching Chen,Hsin-Yen Huang,Cheng-Chi Chuang,Yu-Ming Lin,Ting-Ya Lo,Chi-Lin Teng,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

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Номер патента: US09496331B2. Автор: Kouji Eguchi,Youhei Oda. Владелец: Denso Corp. Дата публикации: 2016-11-15.

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Номер патента: US09508664B1. Автор: Chen-Hua Yu,Jing-Cheng Lin,Szu-Wei Lu,Yen-Yao Chi. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-29.

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Номер патента: US12027606B2. Автор: Chia-Hao Chang,Hai-Ching Chen,Hsin-Yen Huang,Cheng-Chi Chuang,Yu-Ming Lin,Ting-Ya Lo,Chi-Lin Teng,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

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Номер патента: US09755065B2. Автор: Toshio Nakajima. Владелец: ROHM CO LTD. Дата публикации: 2017-09-05.

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Номер патента: US20100093144A1. Автор: Tae Kyun Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-04-15.

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Номер патента: US20180350802A1. Автор: Tung Ying Lee,Chih-Hao Chang,Shou-Zen Chang,Wen-Huei Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-12-06.

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Номер патента: US20200111782A1. Автор: Tung Ying Lee,Chih-Hao Chang,Shou-Zen Chang,Wen-Huei Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-09.

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Номер патента: US20150333153A1. Автор: Kouji Eguchi,Youhei Oda. Владелец: Denso Corp. Дата публикации: 2015-11-19.

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Номер патента: MY188387A. Автор: Chia-Hong Jan,Weimin Han,Joodong Park,Gopinath Bhimarasetti,Walid M Hafez,Raymond E Cotner. Владелец: Intel Corp. Дата публикации: 2021-12-07.

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Номер патента: US20180026133A1. Автор: Till Schloesser,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-25.

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Номер патента: US09768202B2. Автор: Xiaowen LV,Hejing ZHANG,Chihyuan Tseng,Chihyu SU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-09-19.

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Номер патента: US09768200B2. Автор: Xiaowen LV,Hejing ZHANG,Chihyuan Tseng,Chihyu SU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-09-19.

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Номер патента: US20220102381A1. Автор: Zhan Ying,Jie Liu,Kui Zhang,Yuhan ZHU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-03-31.

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Номер патента: US10700182B2. Автор: Wolfgang Bergner,Ralf Siemieniec,Romain Esteve,Dethard Peters,Thomas Aichinger,Bernd Zippelius,Daniel Kueck. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-06-30.

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Номер патента: US09818866B2. Автор: Han-Chung Lin,Hua-Chou Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

Semiconductor device having a plurality of electric field relaxation layers and method for manufacturing same

Номер патента: US09536942B2. Автор: Kenji Hamada,Yuji Murakami,Akihiko Furukawa,Kohei Ebihara,Tsuyoshi Kawakami. Владелец: Mitsubishi Electric Corp. Дата публикации: 2017-01-03.

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Номер патента: US20090209067A1. Автор: Youri Ponomarev. Владелец: NXP BV. Дата публикации: 2009-08-20.

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Номер патента: US7951684B2. Автор: Youri Ponomarev. Владелец: NXP BV. Дата публикации: 2011-05-31.

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Номер патента: US20180331204A1. Автор: Wolfgang Bergner,Ralf Siemieniec,Romain Esteve,Dethard Peters,Thomas Aichinger,Bernd Zippelius,Daniel Kueck. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-11-15.

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Номер патента: US20180053850A1. Автор: Han-Chung Lin,Hua-Chou Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-22.

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Номер патента: KR100269336B1. Автор: 김주영,임훈,황선하. Владелец: 윤종용. Дата публикации: 2000-10-16.

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Номер патента: US20080227260A1. Автор: Yi-Min Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2008-09-18.

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Номер патента: CN102386186B. Автор: 张兴,杨东,黄如,黄芊芊,谭斐,安霞. Владелец: PEKING UNIVERSITY. Дата публикации: 2014-02-19.

Semiconductor device having cell transistor with recess channel structure and method of manufacturing the same

Номер патента: CN1870271A. Автор: 山崎靖. Владелец: Elpida Memory Inc. Дата публикации: 2006-11-29.

Semiconductor device employing a transistor having a recessed channel region and method of fabricating the same

Номер патента: KR100890256B1. Автор: 이진우,박태서,한성희,이자영,변현숙. Владелец: 삼성전자주식회사. Дата публикации: 2009-03-24.

Semiconductor device with high-k dielectric and quasi-metal gate, and method of forming thereof

Номер патента: TW200625632A. Автор: Chih-Hao Wang,Ching-Wei Tsai,Chen-Ming Hu. Владелец: Taiwan Semiconductor Mfg Co Ltd. Дата публикации: 2006-07-16.

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Номер патента: US20220037489A1. Автор: GuangSu SHAO,Yong Gun KIM,Cheong Soo Kim,Xianrui HU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-02-03.

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Номер патента: US20150171179A1. Автор: Sadayoshi Horii,Arito Ogawa,Hideharu Itatani. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2015-06-18.

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Номер патента: US09472637B2. Автор: Sadayoshi Horii,Arito Ogawa,Hideharu Itatani. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-10-18.

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Номер патента: US8203189B2. Автор: Masato Koyama,Yoshinori Tsuchiya. Владелец: Toshiba Corp. Дата публикации: 2012-06-19.

Fin field-effect transistor device and method

Номер патента: US20240282641A1. Автор: Sheng-Liang Pan,Shao-Jyun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

High voltage metal-oxide-semiconductor transistor device having stepped gate structure and manufacturing method thereof

Номер патента: US09461133B1. Автор: Shih-Yin Hsiao,Kun-Huang Yu. Владелец: United Microelectronics Corp. Дата публикации: 2016-10-04.

Semiconductor device having active region semiconductor layer on insulator layer and manufacturing method thereof

Номер патента: KR970003848B1. Автор: 다카시 잇뽀시,가즈유키 스가하라. Владелец: 시키모리야. Дата публикации: 1997-03-22.

The semiconductor device with high voltage CMOS structure and the manufacture method thereof

Номер патента: TW400651B. Автор: Kiyonari Kobayashi. Владелец: Nippon Electric Co. Дата публикации: 2000-08-01.

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Номер патента: US12002718B2. Автор: Sheng-Liang Pan,Shao-Jyun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

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Номер патента: US20160035888A1. Автор: TSENG Hua-Chou,LIN Han-Chung. Владелец: . Дата публикации: 2016-02-04.

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Номер патента: US20180315747A1. Автор: Agam Moshe,Janssens Johan Camiel Julia,Suwhanov Agajan,GREENWOOD Bruce,HOSE Sallie. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2018-11-01.

Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same

Номер патента: US20070004151A1. Автор: Seung Jin,Min Lee,Kyoung Rouh. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-01-04.

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Номер патента: US20230238446A1. Автор: Peng Xiang,Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2023-07-27.

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Номер патента: US20190259840A1. Автор: Yong-Seung Kim,Dong-Suk Shin,Dong-Woo Kim,Kwan-Heum Lee,Hyun-Ho NOH,Yu-yeong Jo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-08-22.

Semiconductor device with split gate flash memory cell structure and method of manufacturing the same

Номер патента: US09837425B2. Автор: Chi REN,Aaron Chen. Владелец: United Microelectronics Corp. Дата публикации: 2017-12-05.

Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices

Номер патента: US09646869B2. Автор: Ming Zhang,Sanh D. Tang. Владелец: Micron Technology Inc. Дата публикации: 2017-05-09.

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Номер патента: US09773706B2. Автор: Walter Rieger. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2017-09-26.

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Номер патента: US20050136587A1. Автор: Prasad Venkatraman,Irene Wan. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2005-06-23.

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Номер патента: US20070117305A1. Автор: Prasad Venkatraman,Irene Wan. Владелец: Individual. Дата публикации: 2007-05-24.

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Номер патента: US20220376062A1. Автор: Franz Hirler,Ralf Siemieniec,Michael Hutzler,David Laforet,Oliver Blank,Cedric OUVRARD,Li Juin Yip. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2022-11-24.

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Номер патента: US20010019154A1. Автор: Shunpei Yamazaki,Setsuo Nakajima. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2001-09-06.

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Номер патента: US20110020987A1. Автор: Brian S. Doyle,Robert S. Chau,Suman Datta,Scott A. Hareland,Rafael Rios,Tom Linton. Владелец: Individual. Дата публикации: 2011-01-27.

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Номер патента: US20180315747A1. Автор: Agajan Suwhanov,Moshe Agam,Johan Camiel Julia Janssens,Bruce Greenwood,Sallie Hose. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2018-11-01.

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Номер патента: US20240312914A1. Автор: Dong Kwon Kim,Jeongyeon Seo,Hongsik SHIN,Hyonwook RA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-19.

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Номер патента: US6906419B2. Автор: Hiroyuki Nitta,Yusuke Kohyama,Yoshiaki Fukuzumi. Владелец: Toshiba Corp. Дата публикации: 2005-06-14.

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Номер патента: US09530729B2. Автор: Hyun-Chul Kim,Seung-hee KO,Yong-Gyu Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-12-27.

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Номер патента: US09490256B2. Автор: Sung-Un Kwon,Jung-Woo Seo,Jun-Kyum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-08.

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Номер патента: US10431587B2. Автор: Li-Wei Feng,Chien-Ting Ho,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-10-01.

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Номер патента: US20070037354A1. Автор: Dae Kim,Jeong Park. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2007-02-15.

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Номер патента: US09385081B2. Автор: Yao-Hsiang Liang,Hung-Chih Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-05.

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Номер патента: US20230307374A1. Автор: Chia-Ching Lin,Chien-Chung Wang,Kuo-Chiang Ting,Tu-Hao Yu,Shun-Jang Laio. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

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Номер патента: US20230352433A1. Автор: Sheng-hui Yang. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-02.

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Номер патента: EP4080556A1. Автор: Hoonseok Seo,Taeyong BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-26.

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Номер патента: US20190252393A1. Автор: Jin Woo Hong,Ki Wook JUNG,Seok Han PARK,Ki Seok Lee,Dong Oh KIM,Chan Sic YOON,Ju Yeon JANG,Je Min PARK,Ho ln LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-08-15.

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Номер патента: US20200295013A1. Автор: Jin Woo Hong,Ki Wook JUNG,Seok Han PARK,Ki Seok Lee,Ho In Lee,Dong Oh KIM,Chan Sic YOON,Ju Yeon JANG,Je Min PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-17.

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Номер патента: US11990409B2. Автор: Hoonseok Seo,Taeyong BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-21.

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Номер патента: US20240213155A1. Автор: Hoonseok Seo,Taeyong BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-27.

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Номер патента: US20140252623A1. Автор: Yao-Hsiang Liang,Hung-Chih Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-09-11.

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Номер патента: US20150179565A1. Автор: Yao-Hsiang Liang,Hung-Chih Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-06-25.

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Номер патента: US12119390B2. Автор: Ming-Hsi Yeh,Clement Hsingjen Wann,Yu-Ming Lin,Chun Hsiung Tsai,Kuo-Feng Yu,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Method of manufacturing semiconductor devices having contact plugs overlapping associated bitline structures and contact holes

Номер патента: US10446558B2. Автор: Sung-Un Kwon,Jung-Woo Seo,Jun-Kyum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-10-15.

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Номер патента: US20200251571A1. Автор: Ming-Hsi Yeh,Clement Hsingjen Wann,Yu-Ming Lin,Chun Hsiung Tsai,Kuo-Feng Yu,Shahaji B. More. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-08-06.

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Номер патента: US12040412B2. Автор: Jian-Ting CHEN,Yu-Lung Wang,Yao-Ting Tsai,Yuan-Huang Wei. Владелец: Winbond Electronics Corp. Дата публикации: 2024-07-16.

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Номер патента: US20150111354A1. Автор: Takeshi Ishiguro,Samuel Anderson. Владелец: Icemos Technology Ltd. Дата публикации: 2015-04-23.

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Номер патента: US20240347534A1. Автор: Shih-Yao Lin,Chieh-Ning Feng,Shu-Yuan Ku,Shu-Uei JANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

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Номер патента: WO2008136874A1. Автор: Takeshi Ishiguro. Владелец: Icemos Technology Corporation. Дата публикации: 2008-11-13.

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Номер патента: US20240347635A1. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

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Номер патента: US09443979B2. Автор: Bo-Un Yoon,Jeong-Nam Han,Byung-kwon CHO,Sang-Jine Park,Ha-Young Jeon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-13.

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Номер патента: US11950400B2. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-04-02.

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Номер патента: US20210202731A1. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Tung-Ying Lee,Yu-Chao Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-07-01.

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Номер патента: US11948970B2. Автор: Chih-Hao Wang,Kuan-Lun Cheng,Kuo-Cheng Ching,Ching-Wei Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-02.

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Номер патента: US11302798B2. Автор: Chia-Hao Chang,Hai-Ching Chen,Hsin-Yen Huang,Cheng-Chi Chuang,Yu-Ming Lin,Ting-Ya Lo,Chi-Lin Teng,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-04-12.

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Номер патента: US20220238693A1. Автор: Chia-Hao Chang,Hai-Ching Chen,Hsin-Yen Huang,Cheng-Chi Chuang,Yu-Ming Lin,Ting-Ya Lo,Chi-Lin Teng,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-28.

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Номер патента: US20160111372A1. Автор: Jin Lu,Kevin Torek,Hongqi Li,Alex Schrinsky,Thy Tran. Владелец: Micron Technology Inc. Дата публикации: 2016-04-21.

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Номер патента: US20240006515A1. Автор: JISONG Jin,Jun Wang,Kuchanari SUBHASH,Nalawar PRASANNA. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-01-04.

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Номер патента: US12074197B2. Автор: Daili WANG. Владелец: China Resources Microelectronics Chongqing Ltd. Дата публикации: 2024-08-27.

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Номер патента: US12131953B2. Автор: Jie Bai,Juanjuan Huang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-29.

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Номер патента: US12148613B2. Автор: Kai Cheng,Liyang Zhang. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-11-19.

Polycide gate stucture and manufacturing method thereof

Номер патента: US20050148120A1. Автор: Han-Hsing Liu. Владелец: Winbond Electronics Corp. Дата публикации: 2005-07-07.

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Номер патента: US09881946B2. Автор: Xiaoxing Zhang. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-01-30.

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Номер патента: US09837502B2. Автор: Yueping Zuo,Xiaowei Xu,Wenqing Xu,Kaihong MA,Hongwei TIAN. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-12-05.

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Номер патента: US11925017B2. Автор: Hsin-Chi Chen,Chien-Hsuan Liu,Chih-Ming Lee,Hung-Che Liao,Kun-Tsang Chuang,Chiang-Ming Chuang,Chia-Ming PAN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-05.

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Номер патента: US20240213313A1. Автор: Chih-Hao Wang,Kuan-Lun Cheng,Kuo-Cheng Ching,Ching-Wei Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-27.

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Номер патента: US20220352340A1. Автор: Ning Li,Shuhao Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-11-03.

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Номер патента: US20210098452A1. Автор: Tung Ying Lee,Chih-Hao Chang,Shou-Zen Chang,Wen-Huei Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

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Номер патента: US20200111782A1. Автор: Lee Tung Ying,Chang Chih-Hao,Guo Wen-Huei,Chang Shou-Zen. Владелец: . Дата публикации: 2020-04-09.

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Номер патента: US9583623B2. Автор: Yen-Ming Chen,Ka-Hing Fung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-28.

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Номер патента: EP4199042A1. Автор: Shih-hung Lee. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-06-21.

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Номер патента: EP4451320A1. Автор: Deyuan Xiao,Semyeong Jang,Minki HONG,Joonsuk Moon,Jo-Lan CHIN,Kyongtaek LEE. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-23.

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Номер патента: KR100378186B1. Автор: 이승환,김영관,박영욱,김동찬. Владелец: 삼성전자주식회사. Дата публикации: 2003-03-29.

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Номер патента: FR2846789B1. Автор: Pierre Morin,Jorge Regolini. Владелец: STMICROELECTRONICS SA. Дата публикации: 2005-06-24.

Semiconductor device using amorphous fluorinated carbon film having benzene ring and manufacturing method thereof

Номер патента: KR100286075B1. Автор: 가즈히코 엔도,도루 다쓰미. Владелец: 닛본 덴기 가부시끼가이샤. Дата публикации: 2001-04-16.

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Номер патента: WO2006041793A1. Автор: Mark C. Hakey,Toshiharu Furukawa,Steven J. Holmes,David V. Horak,Charles W. Koburger, III. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2006-04-20.

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Номер патента: US20180012987A1. Автор: NAKAJIMA Toshio. Владелец: ROHM CO., LTD.. Дата публикации: 2018-01-11.

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Номер патента: US20190148536A1. Автор: NAKAJIMA Toshio. Владелец: ROHM CO., LTD.. Дата публикации: 2019-05-16.

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Номер патента: US20160284835A1. Автор: NAKAJIMA Toshio. Владелец: ROHM CO., LTD.. Дата публикации: 2016-09-29.

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Номер патента: US20150333153A1. Автор: Kouji Eguchi,Youhei Oda. Владелец: Denso Corp. Дата публикации: 2015-11-19.

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Номер патента: DE102008011813A1. Автор: Sven Beyer,Rolf Stephan,Patrick Press,Martin Trentzsch. Владелец: AMD Fab 36 LLC and Co KG. Дата публикации: 2009-09-10.

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Номер патента: US20190109098A1. Автор: Yu Chen-Hua,Lin Jing-Cheng,Lu Szu-Wei,Chi Yen-Yao. Владелец: . Дата публикации: 2019-04-11.

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Номер патента: US20190296114A1. Автор: Jan Chia-Hong,Park Joodong,Hafez Walid M.,Bhimarasetti Gopinath,Han Weimin,COTNER RAYMOND E.. Владелец: . Дата публикации: 2019-09-26.

Semiconductor devices having a fin transistor and a plannar transistor and methods of forming the same

Номер патента: KR100612419B1. Автор: 이종욱,강민구,신유균,이덕형. Владелец: 삼성전자주식회사. Дата публикации: 2006-08-16.

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Номер патента: US8558299B2. Автор: Zhendong Liu,Srinivas Gandikota,Yong Cao,Wei D. Wang,Xianmin Tang,Kevin Moraes,Muhammad M. Rasheed,Thanh X. Nguyen,Ananthkrishna Jupudi. Владелец: Applied Materials Inc. Дата публикации: 2013-10-15.

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Номер патента: US8575705B2. Автор: Myungsun Kim,Hajin LIM,Hoi Sung Chung,Jinho Do,Weonhong Kim,Moonkyun Song,Dae-Kwon Joo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-11-05.

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Номер патента: CN114242791A. Автор: J·朴,C-H·简,W·M·哈菲兹,韩卫民,G·比马拉塞蒂,R·E·科特纳. Владелец: Intel Corp. Дата публикации: 2022-03-25.

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Номер патента: KR102287271B1. Автор: 왈리드 엠. 하페즈,치아-홍 잔,주동 박,고피나스 비마라세티,웨이민 한,레이몬드 이. 코트너. Владелец: 인텔 코포레이션. Дата публикации: 2021-08-06.

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Номер патента: TW200943439A. Автор: Sven Beyer,Rolf Stephan,Patrick Press,Martin Trentzsch. Владелец: Advanced Micro Devices Inc. Дата публикации: 2009-10-16.

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Номер патента: US20200168699A1. Автор: Hu Youcun,Yang Ming,HU Lianfeng,BEI Duohui,Ni Baibing LING. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-05-28.

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Номер патента: US20230036754A1. Автор: Hui Xue,Kejun MU,Yutong SHEN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-02-02.

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Номер патента: US20230343589A1. Автор: Kai Cheng,Liyang Zhang. Владелец: Enkris Semiconductor Inc. Дата публикации: 2023-10-26.

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Номер патента: US20230290865A1. Автор: ZHENG Erhu,Ye Yizhou,Zhang Gaoying. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2023-09-14.

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Номер патента: US20230411412A1. Автор: Deyuan Xiao,Kanyu Cao. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-21.

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Номер патента: US20230413536A1. Автор: Deyuan Xiao,GuangSu SHAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-21.

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Номер патента: US20240153913A1. Автор: Wei Zheng,Zhikuan Chen,Yao Wang,Chuan Hu,Zhitao Chen,Yinhua CUI,Chang'an WANG. Владелец: Institute of Semiconductors of Guangdong Academy of Sciences. Дата публикации: 2024-05-09.

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Номер патента: US20220130716A1. Автор: Tao Li. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-04-28.

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Номер патента: US12112973B2. Автор: Tao Li. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-08.

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Номер патента: US20180331193A1. Автор: Chia-Chang Hsu,Yen-Chen Chen,Wei-Ning Chen,Kuo-Chih Lai,Yang-Ju Lu,Shih-Min Chou,Yun-Tzu Chang,Wei-Ming Hsiao,Chun-Yao Yang. Владелец: United Microelectronics Corp. Дата публикации: 2018-11-15.

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Номер патента: US20180026133A1. Автор: Till Schloesser,Andreas Peter Meiser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-01-25.

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Номер патента: US20200006285A1. Автор: LI ZHANG,Xinsheng Wang,Weihua Cheng,Ziqun HUA,Hongbin Zhu,Xianjin Wan,Gaosheng Zhang,Jiawen Wang,Taotao DING,Shining Yang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-01-02.

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Номер патента: US11854862B2. Автор: Yi Jiang,Deyuan Xiao,GuangSu SHAO,Yuhan ZHU,Youming Liu,Xingsong SU,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-26.

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Номер патента: US20230335430A1. Автор: Yi Jiang,Deyuan Xiao,GuangSu SHAO,Yuhan ZHU,Youming Liu,Xingsong SU,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-19.

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Номер патента: US20150091103A1. Автор: Tze-Liang Lee,Pang-Yen Tsai,Chii-Horng Li,Ming-Hua Yu,Yen-Ru LEE,Lilly SU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-04-02.

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Номер патента: US20240105846A1. Автор: Li-Ping Huang,Chao-Chun Lu,Wen-Hsien TU. Владелец: Invention and Collaboration Laboratory Pte Ltd. Дата публикации: 2024-03-28.

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Номер патента: US12096627B2. Автор: Deyuan Xiao. Владелец: SiEn Qingdao Integrated Circuits Co Ltd. Дата публикации: 2024-09-17.

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Номер патента: US20230320077A1. Автор: Sangho Lee,Moonyoung JEONG,Kiseok LEE,Hyungjun NOH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-05.

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Номер патента: US20140264476A1. Автор: Han-Chung Lin,Hua-Chou Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-09-18.

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Номер патента: TW200504812A. Автор: Youri Ponomarev. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2005-02-01.

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Номер патента: US20180053850A1. Автор: TSENG Hua-Chou,LIN Han-Chung. Владелец: . Дата публикации: 2018-02-22.

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Номер патента: US20140264476A1. Автор: Han-Chung Lin,Hua-Chou Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-09-18.

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Номер патента: US20230352420A1. Автор: Dong Xue. Владелец: Changxin Jidian Beijing Memory Technologies Co Ltd. Дата публикации: 2023-11-02.

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Номер патента: US09590036B2. Автор: Fang-An Shu,Chi-Liang Wu,Kuan-Yi Lin,Tzung-Wei Yu. Владелец: E Ink Holdings Inc. Дата публикации: 2017-03-07.

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Номер патента: US20240014276A1. Автор: Yizhi Zeng. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-11.

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Номер патента: US20240213374A1. Автор: Cheng Gong. Владелец: Guangzhou China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2024-06-27.

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Номер патента: US09614090B2. Автор: Ju-youn Kim,Sang-jung KANG,Ji-Hwan An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-04.

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Номер патента: US11908746B2. Автор: MING-CHING Chang,Chao-Cheng Chen,Shih-Yao Lin,Chih-Han Lin,Chih-Chung Chiu,Chen-Ping CHEN,Kuei-Yu Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-20.

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Номер патента: US20240170336A1. Автор: MING-CHING Chang,Chao-Cheng Chen,Shih-Yao Lin,Chih-Han Lin,Chih-Chung Chiu,Chen-Ping CHEN,Kuei-Yu Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-23.

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Номер патента: US20240312994A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Guan-Lin Chen,Jung-Chien Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

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Номер патента: US09780217B2. Автор: Walid M. Hafez,Chia-Hong Jan,Jeng-Ya D. YEH,Joodong Park. Владелец: Intel Corp. Дата публикации: 2017-10-03.

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Номер патента: US8269278B2. Автор: Jyi-Tsong Lin,Po-Hsieh Lin,Yi-Chuen Eng. Владелец: National Sun Yat Sen University. Дата публикации: 2012-09-18.

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Номер патента: US20100117151A1. Автор: Jyi-Tsong Lin,Po-Hsieh Lin,Yi-Chuen Eng. Владелец: National Sun Yat Sen University. Дата публикации: 2010-05-13.

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Номер патента: US11810903B2. Автор: JISONG Jin. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2023-11-07.

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Номер патента: US20230230963A1. Автор: JISONG Jin. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2023-07-20.

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Номер патента: US20240063263A1. Автор: Zhiqiang Wu,Tzer-Min Shen,Huang-Siang LAN,Sathaiya Mahaveer DHANYAKUMAR. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-22.

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Номер патента: US11843032B2. Автор: Zhiqiang Wu,Tzer-Min Shen,Huang-Siang LAN,Sathaiya Mahaveer DHANYAKUMAR. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-12.

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Номер патента: US20210119010A1. Автор: Sai-Hooi Yeong,Chi-On CHUI,Chien-Ning YAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-22.

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Номер патента: US11996410B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Guan-Lin Chen,Jung-Chien Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-28.

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Номер патента: US20170179124A1. Автор: Ju-youn Kim,Sang-jung KANG,Ji-Hwan An. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-22.

Semiconductor device having reduced gate charge and reduced on resistance and method

Номер патента: TW200527671A. Автор: Prasad Venkatraman,Irene S Wan. Владелец: Semiconductor Components Ind. Дата публикации: 2005-08-16.

Semiconductor device having reduced gate charge and reduced on resistance and method

Номер патента: HK1078991A1. Автор: Prasad Venkatraman,Irene S Wan. Владелец: Semiconductor Components Ind. Дата публикации: 2006-03-24.

Semiconductor device with gate isolation features and fabrication method of the same

Номер патента: US11876119B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Jia-Chuan You,Shi Ning Ju,Guan-Lin Chen,Jung-Chien Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-16.

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Номер патента: US20230163196A1. Автор: Chun-Yen Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-05-25.

Pixel structure and control method thereof and display panel

Номер патента: US09818368B2. Автор: Yanbing WU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-11-14.

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Номер патента: US8604477B2. Автор: Wu-Hsiung Lin,Jia-Hong Ye,Guang-Ren Shen,Shin-Shueh Chen,Po-Hsueh Chen. Владелец: AU OPTRONICS CORP. Дата публикации: 2013-12-10.

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Номер патента: US20230010950A1. Автор: Yumeng SUN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-12.

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Номер патента: US20210257393A1. Автор: MENG Li,Pan Xu,Zhidong Yuan,Yongqian Li,Can Yuan,Xuehuan Feng,Zhenfei Cai. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2021-08-19.

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Номер патента: US20220293722A1. Автор: Er-Xuan Ping,Daejoong Won,Soonbyung Park. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-15.

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Номер патента: US20230395700A1. Автор: Yi Jiang,Deyuan Xiao,GuangSu SHAO,Youming Liu,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-07.

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Номер патента: US20100314634A1. Автор: Hsien-Kun Chiu. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2010-12-16.

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Номер патента: US20230397400A1. Автор: Yi Tang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-07.

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Номер патента: US20240096982A1. Автор: Bing-Yue Tsui,Jui-Cheng Wang,Li-Tien Hsueh,Jui-Tse Hsiao. Владелец: National Yang Ming Chiao Tung University NYCU. Дата публикации: 2024-03-21.

Mosfet structure, and manufacturing method thereof

Номер патента: US20200295184A1. Автор: Tse-Huang Lo. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2020-09-17.

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Номер патента: US09960276B2. Автор: Wenhui Li. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-05-01.

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Номер патента: US12094945B2. Автор: Er-Xuan Ping,Daejoong Won,Soonbyung Park. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-17.

Co-planar oxide semiconductor TFT substrate structure and manufacture method thereof

Номер патента: US09614104B2. Автор: Xiaowen LV,Chihyuan Tseng. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-04-04.

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Номер патента: US09614018B2. Автор: Qinghua Zou,Longqiang Shi. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-04-04.

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Номер патента: US09570617B2. Автор: Xiaowen LV. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-02-14.

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Номер патента: US09553198B1. Автор: Xiaowen LV. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-01-24.

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Номер патента: US20240274684A1. Автор: Deyuan Xiao,GuangSu SHAO,Yunsong QIU. Владелец: Beijing Superstring Academy of Memory Technology. Дата публикации: 2024-08-15.

Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process

Номер патента: US09824913B2. Автор: Shaohua Zhang,Yongxiang Wen,Guoqiang Yu,Yulei Jiang,Yanghui Sun. Владелец: Hangzhou Silan Microelectronics Co Ltd. Дата публикации: 2017-11-21.

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Номер патента: US20230420499A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2023-12-28.

Super-junction mos device with integrated tmbs structure and manufacturing method thereof

Номер патента: US20240079445A1. Автор: Jiakun Wang,Xiao Hongxiu. Владелец: Hangzhou Silicon Magic Semiconductor Technology Co Ltd. Дата публикации: 2024-03-07.

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Номер патента: US20190006469A1. Автор: KIM Dong-woo,Shin Dong-Suk,Kim Yong-Seung,Noh Hyun-ho,Lee Kwan-heum,Jo Yu-yeong. Владелец: . Дата публикации: 2019-01-03.

SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES DISPOSED OVER BUFFER STRUCTURES AND MANUFACTURING METHOD THEREOF

Номер патента: US20170033220A1. Автор: Chen Yen-Ming,Fung Ka-Hing. Владелец: . Дата публикации: 2017-02-02.

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Номер патента: US20190259840A1. Автор: KIM Dong-woo,Shin Dong-Suk,Kim Yong-Seung,Noh Hyun-ho,Lee Kwan-heum,Jo Yu-yeong. Владелец: . Дата публикации: 2019-08-22.

Semiconductor device having planar type high withstand voltage vertical devices, and production method thereof

Номер патента: CA2191997A1. Автор: Kazuhisa Sakamoto. Владелец: Individual. Дата публикации: 1996-10-17.

A scalable flash eeprom memory cell with floating gate spacer wrapped by control gate, and method of manufacturing the same

Номер патента: WO2003041176A3. Автор: Ching-Shi Jenq,Ching Dong Wang. Владелец: Integrated Memory Tech Inc. Дата публикации: 2003-07-31.

Semiconductor Devices Having Source/Drain Regions with Strain-Inducing Layers and Methods of Manufacturing Such Semiconductor Devices

Номер патента: US20160027875A1. Автор: Lee Byeong-Chan,Kim Seok-Hoon,Lee Kwan-heum,Kim Jin-Bum,JUNG Su-Jin,Lee Cho-eun. Владелец: . Дата публикации: 2016-01-28.

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Номер патента: US20170213761A1. Автор: Zhang Ming,Tang Sanh D.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2017-07-27.

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Номер патента: US20160240661A1. Автор: Hirler Franz,Schloesser Till,Meiser Andreas. Владелец: . Дата публикации: 2016-08-18.

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Номер патента: US20160307891A1. Автор: Schloesser Till,Meiser Andreas. Владелец: . Дата публикации: 2016-10-20.

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Номер патента: US20130242659A1. Автор: Kim Yong-Tae,Yu Tea-Kwang,Kim Kwang-Tae,Seo Bo-Young,Lee Yong-Kyu,Jeon Hee-Seog. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-09-19.

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Номер патента: US20140312411A1. Автор: NAKAJIMA Toshio. Владелец: . Дата публикации: 2014-10-23.

Semiconductor Device with Transistor Cells and a Drift Structure and Method of Manufacturing

Номер патента: US20180331204A1. Автор: Siemieniec Ralf,Peters Dethard,AICHINGER Thomas,BERGNER Wolfgang,ESTEVE Romain,KUECK Daniel,ZIPPELIUS Bernd. Владелец: . Дата публикации: 2018-11-15.

Semiconductor device with MOS-gate control and trench structure and method of manufacture

Номер патента: DE19949364B4. Автор: Daniel M. Kinzer. Владелец: International Rectifier Corp USA. Дата публикации: 2014-10-30.

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Номер патента: US20140077333A1. Автор: SON Nak-jin. Владелец: . Дата публикации: 2014-03-20.

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Номер патента: US20170301683A1. Автор: Ren Chi,Chen Aaron. Владелец: . Дата публикации: 2017-10-19.

Bonded semiconductor device with programmable logic device and NAND flash memory and method of forming the same

Номер патента: CN110870062A. Автор: 刘峻,程卫华. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2020-03-06.

Semiconductor device incorporating a defect controlled strained channel structure and method of making the same

Номер патента: US20050205936A1. Автор: John Grant,Tab Stephens. Владелец: Individual. Дата публикации: 2005-09-22.

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Номер патента: US20160365426A1. Автор: LIU Chi-Wen,Tsai Ching-Wei,Ching Kuo-Cheng,Leung Ying-Keung. Владелец: . Дата публикации: 2016-12-15.

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Номер патента: US20030087493A1. Автор: Ching Wang,Ching-Shi Jenq. Владелец: Integrated Memory Technologies Inc. Дата публикации: 2003-05-08.

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Номер патента: US20130334583A1. Автор: YANG Ki Ho. Владелец: SK HYNIX INC.. Дата публикации: 2013-12-19.

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Номер патента: US20160043000A1. Автор: Rieger Walter. Владелец: . Дата публикации: 2016-02-11.

Semiconductor device with vertical channel transistor and low sheet resistance and method for fabricating the same

Номер патента: KR100936808B1. Автор: 임관용,성민규. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2010-01-14.

Semiconductor device having an impurity gradient in the impurity regions and method of manufacture

Номер патента: US7141821B1. Автор: Hisashi Ohtani,Shunpei Yamazaki,Toshiji Hamatani. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2006-11-28.

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Номер патента: EP0001574B1. Автор: Narasipur Gundappa Anantha,Augustine Wei-Chun Chang. Владелец: International Business Machines Corp. Дата публикации: 1982-01-13.

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Номер патента: CN1577850A. Автор: 布雷恩·S·多伊,斯科特·A·黑尔兰德,休曼·达塔,罗伯特·S·周,拉斐尔·里奥斯,汤姆·林顿. Владелец: Intel Corp. Дата публикации: 2005-02-09.

Novel semiconductor device combining the advantages of solid and soi architectures, and method for making same

Номер патента: EP1166362A1. Автор: Thomas Skotnicki,Malgorzata Jurczak. Владелец: France Telecom SA. Дата публикации: 2002-01-02.

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Номер патента: US20060172497A1. Автор: Brian Doyle,Suman Datta,Scott Hareland,Robert Chau,Rafael Rios,Tom Linton. Владелец: Individual. Дата публикации: 2006-08-03.

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Номер патента: EP2270868A1. Автор: Brian Doyle,Suman Datta,Scott Hareland,Robert Chau,Rafael Rios,Tom Linton Jr.. Владелец: Intel Corp. Дата публикации: 2011-01-05.

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Номер патента: EP2801114B1. Автор: Yih-Yin Lin,Chih-Wei Hsu,Pai-li LIN. Владелец: VISHAY GENERAL SEMICONDUCTOR LLC. Дата публикации: 2020-06-03.

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Номер патента: US7939890B2. Автор: Tadaaki Yamauchi. Владелец: Renesas Electronics Corp. Дата публикации: 2011-05-10.

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Номер патента: US7456476B2. Автор: Brian S. Doyle,Robert S. Chau,Suman Datta,Scott A. Hareland,Rafael Rios,Tom Linton. Владелец: Intel Corp. Дата публикации: 2008-11-25.

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Номер патента: US20060216897A1. Автор: DongSuk Shin,Sungyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-09-28.

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Номер патента: EP4231342A1. Автор: Qinghua Han. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-08-23.

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Номер патента: US20220376062A1. Автор: Hirler Franz,Hutzler Michael,Blank Oliver,Siemieniec Ralf,OUVRARD Cedric,Yip Li Juin,Laforet David. Владелец: . Дата публикации: 2022-11-24.

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Номер патента: US20220045054A9. Автор: Chen Xu,Lei Chen,ZHI Wang,Guangcai Yuan,Feng Guan. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2022-02-10.

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Номер патента: US20210151435A1. Автор: Chen Xu,Lei Chen,ZHI Wang,Guangcai Yuan,Feng Guan. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-05-20.

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Номер патента: US9006730B2. Автор: Chung-Chin Huang,Chin-Wen Lin,Ted Hong Shinn,Chuan-I HUANG. Владелец: E Ink Holdings Inc. Дата публикации: 2015-04-14.

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Номер патента: US20170018653A1. Автор: Xiaowen LV. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-01-19.

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Номер патента: US20230068461A1. Автор: XIAOGUANG WANG,Kanyu Cao,Huihui Li,Dinggui Zeng. Владелец: Beijing Superstring Academy of Memory Technology. Дата публикации: 2023-03-02.

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Номер патента: US11769672B2. Автор: JISONG Jin. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2023-09-26.

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Номер патента: US11996460B2. Автор: ZHANG HAIYANG,JI Shiliang,Xiao XINGYU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-05-28.

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Номер патента: US20220416049A1. Автор: Deyuan Xiao,GuangSu SHAO,Weiping BAI,Yunsong QIU. Владелец: Beijing Superstring Academy of Memory Technology. Дата публикации: 2022-12-29.

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Номер патента: US20230225110A1. Автор: Kui Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-13.

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Номер патента: US11508731B1. Автор: Shuai Guo. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-11-22.

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Номер патента: US11895822B2. Автор: Yachao Xu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-06.

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Номер патента: US09818745B2. Автор: Tung Ying Lee,Chih-Hao Chang,Shou-Zen Chang,Wen-Huei Guo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

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Номер патента: US20080048274A1. Автор: Hyun-Young Kim,Jin-gi Hong,Jung-Hun Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-02-28.

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Номер патента: US11791225B2. Автор: Pingheng WU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-17.

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Номер патента: US20220278003A1. Автор: Pingheng WU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-01.

Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same

Номер патента: US20050258450A1. Автор: Adam Saxler. Владелец: Individual. Дата публикации: 2005-11-24.

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Номер патента: US20240234313A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

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Номер патента: US20240234314A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

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Номер патента: US20240355733A1. Автор: Yu-Yun Peng,Keng-Chu Lin,Wei-Ting YEH,Zheng-Yong Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

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Номер патента: US20240266294A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-08.

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Номер патента: US20240266293A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-08.

Low capacitance interconnect structures and associated systems and methods

Номер патента: US09911653B2. Автор: Jin Lu,Kevin Torek,Hongqi Li,Alex Schrinsky,Thy Tran. Владелец: Micron Technology Inc. Дата публикации: 2018-03-06.

Low capacitance interconnect structures and associated systems and methods

Номер патента: US09613864B2. Автор: Jin Lu,Kevin Torek,Hongqi Li,Alex Schrinsky,Thy Tran. Владелец: Micron Technology Inc. Дата публикации: 2017-04-04.

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Номер патента: US20150262996A1. Автор: Hsiao-Tsung Yen,Ta-Hsun Yeh,Yuh-Sheng Jean. Владелец: Realtek Semiconductor Corp. Дата публикации: 2015-09-17.

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Номер патента: US20030151116A1. Автор: Louis Hsu,Lawrence Clevenger,Keith Wong,Cyril Cabral. Владелец: International Business Machines Corp. Дата публикации: 2003-08-14.

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Номер патента: US20200365514A1. Автор: Ming-Fa Chen,Hsien-Wei Chen,Ching-Jung Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-19.

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Номер патента: US11450595B2. Автор: Wen-Shiang Liao,Ying-Chih Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-20.

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Номер патента: US20210202360A1. Автор: Wen-Shiang Liao,Ying-Chih Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-07-01.

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Номер патента: US20170213790A1. Автор: Carlos H. Diaz,Tien-Lu Lin,Yung-Chih Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-07-27.

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Номер патента: US11848282B2. Автор: Hyunsuk CHUN,Sheng Wei Yang,Shams U. Arifeen. Владелец: Micron Technology Inc. Дата публикации: 2023-12-19.

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Номер патента: US20200211983A1. Автор: Hyunsuk CHUN,Sheng Wei Yang,Shams U. Arifeen. Владелец: Micron Technology Inc. Дата публикации: 2020-07-02.

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Номер патента: US20200402925A1. Автор: Hyunsuk CHUN,Sheng Wei Yang,Shams U. Arifeen. Владелец: Micron Technology Inc. Дата публикации: 2020-12-24.

A semiconductor device with a v-groove insulating isolation structure and a method of manufacturing such a device

Номер патента: DE3175640D1. Автор: Takeshi Fukuda. Владелец: Fujitsu Ltd. Дата публикации: 1987-01-08.

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Номер патента: US12087665B2. Автор: Hsiang-Hung Chang,Wei-Lan Chiu. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2024-09-10.

Semiconductor devices including protection patterns and methods of forming the same

Номер патента: US20150340314A1. Автор: Eun-ji Kim,Seung-Taek Lee,Yeong-lyeol Park,Sung-Dong Cho,Hyoung-Yol Mun. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-11-26.

Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication

Номер патента: TW533531B. Автор: Lawrence Clevenger,Louis Lu-Chen Hsu,Keith Kwong Hon Wong,Cyril Cabral Jr. Владелец: Ibm. Дата публикации: 2003-05-21.

Semiconductor structure and forming method thereof

Номер патента: US11309183B2. Автор: JIN Jisong. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2022-04-19.

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Номер патента: US12080596B2. Автор: JISONG Jin,Abraham Yoo. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-09-03.

Semiconductor device structures including stair step structures, and related semiconductor devices

Номер патента: US20180190587A1. Автор: Adam L. Olson,Jixin Yu,Matthew Park. Владелец: Micron Technology Inc. Дата публикации: 2018-07-05.

Semiconductor structure and manufacturing method thereof

Номер патента: US20240222266A1. Автор: Xiaoling Wang,Luguang WANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-07-04.

Semiconductor structure and preparation method thereof

Номер патента: US20240063257A1. Автор: Peng Xiang,Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-02-22.

Semiconductor structure and manufacturing method thereof

Номер патента: US11756920B2. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Min-Feng KAO,Hsing-Chih LIN,Zheng-Xun Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Semiconductor structure and production method thereof

Номер патента: US20210005706A1. Автор: Bin Lu,Jian Shen. Владелец: Shenzhen Goodix Technology Co Ltd. Дата публикации: 2021-01-07.

Package structure and manufacturing method thereof

Номер патента: US12087745B2. Автор: Po-Hao Tsai,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Li-Hsien HUANG,Chi-Hsi Wu,Ming-Shih Yeh,Ta-Wei Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

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Номер патента: US12131979B2. Автор: Xiaoling Wang,Luguang WANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-29.

Semiconductor structure including gate structure including barrier layer and conductive layer and manufacturing method thereof

Номер патента: US12113111B2. Автор: Chuyu WANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-08.

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Номер патента: US20220302127A1. Автор: Tao Liu,Jun Xia,Penghui Xu,Sen Li,Qiang Wan,Kangshu ZHAN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-22.

Interconnection structure and manufacturing method thereof

Номер патента: US09859159B2. Автор: Dyi-chung Hu,Ra-Min Tain,Yu-Hua Chen,Yin-Po Hung. Владелец: Unimicron Technology Corp. Дата публикации: 2018-01-02.

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Номер патента: US20240371840A1. Автор: Po-Hao Tsai,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Li-Hsien HUANG,Chi-Hsi Wu,Ming-Shih Yeh,Ta-Wei Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Memory device structure and fabricating method thereof

Номер патента: US09640432B2. Автор: Sheng-Fen Chiu,Shaobin Li,Jinshuang Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-05-02.

Semiconductor structure and formation method thereof

Номер патента: US12033920B2. Автор: Pingheng WU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-07-09.

Semiconductor interconnect structure and manufacturing method thereof

Номер патента: US20170025360A1. Автор: Po-Wen Chiu,Chao-Hui Yeh,Zheng-Yong Liang. Владелец: National Tsing Hua University NTHU. Дата публикации: 2017-01-26.

Semiconductor structure and forming method thereof

Номер патента: US20240023317A1. Автор: Deyuan Xiao,GuangSu SHAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-18.

Semiconductor structure and forming method thereof

Номер патента: US20230154831A1. Автор: Yonghui Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-05-18.

Interconnection structure and fabrication method thereof

Номер патента: US20040241978A1. Автор: Chih-Chao Yang,Ming-Shih Yeh,Chiung-Sheng Hsiung,Gwo-Shil Yang,Jen-Kon Chen. Владелец: Individual. Дата публикации: 2004-12-02.

Semiconductor structure and manufacturing method thereof

Номер патента: US20210151349A1. Автор: Nianheng ZHANG. Владелец: Shanghai Huali Integrated Circuit Manufacturing Co Ltd. Дата публикации: 2021-05-20.

Semiconductor structures and manufacturing methods thereof

Номер патента: US12094958B2. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-09-17.

Semiconductor structure and fabrication method thereof

Номер патента: US12087583B2. Автор: Jen-Chou Huang,Shengan ZHANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-10.

Redistribution layer structure and manufacturing method thereof

Номер патента: US12107036B2. Автор: Cheng-Chi Wang,Chuan-Ming Yeh,Kuo-Jung Fan,Heng-Shen Yeh. Владелец: Innolux Corp. Дата публикации: 2024-10-01.

Chip stacked structure and manufacturing method therefor, and chip packaging structure, and electronic device

Номер патента: EP4372789A1. Автор: Eric Wu,Jifeng Zhu. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-05-22.

Semiconductor device having an improved contact structure and a manufacturing method thereof

Номер патента: US20010041450A1. Автор: Yoshihiro Kusumi,Junko Matsumoto,Nobuaki Yamanaka,Tetsuhiro Fukao,Shigenori Sakamori,Akemi Teratani,Kazuyuki Ohmi,Kenji Tabaru. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-11-15.

Semiconductor structure and manufacture method therefor

Номер патента: EP3758065A1. Автор: Bin Lu,Jian Shen. Владелец: Shenzhen Goodix Technology Co Ltd. Дата публикации: 2020-12-30.

Conductive patterns, semiconductor devices comprising the conductive patterns, and related methods and systems

Номер патента: US20200066578A1. Автор: Scott L. Light,Richard J. Hill. Владелец: Micron Technology Inc. Дата публикации: 2020-02-27.

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Номер патента: EP3968371A1. Автор: Zhen Zhou,Er Xuan PING. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-03-16.

Silicon Carbide Semiconductor Device Having a Metal Adhesion and Barrier Structure and a Method of Forming Such a Semiconductor Device

Номер патента: US20200013722A1. Автор: Matthias Müller,Hans-Joachim Schulze,Roman Roth,Frank Hille,Holger Schulze,Carsten Schaeffer,Oliver Humbel,Frank Umbach,Ravi Keshav Joshi,Michael Fugger,Thomas Laska,Juergen Steinbrenner. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-01-09.

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Номер патента: US20170271268A1. Автор: Schulze Hans-Joachim,Schaeffer Carsten,Mueller Matthias,HILLE Frank,SCHULZE Holger,Steinbrenner Juergen,Joshi Ravi Keshav,Humbel Oliver,Umbach Frank,Roth Roman,Fugger Michael,Laska Thomas. Владелец: . Дата публикации: 2017-09-21.

A semiconductor device for forming a via using AlCu-plug, and a manufacturing method thereof

Номер патента: KR100515380B1. Автор: 이희배. Владелец: 동부아남반도체 주식회사. Дата публикации: 2005-09-14.

Capacitor in a semiconductor device using a film having a high dielectric constant and fabrication method thereof

Номер патента: KR100313506B1. Автор: 노재성. Владелец: 현대반도체 주식회사. Дата публикации: 2001-11-07.

Semiconductor device with thick interconnections free of dishing and erosion, and method of manufacturing such semiconductor device

Номер патента: US20030222351A1. Автор: Takehiro Aritoku. Владелец: NEC Electronics Corp. Дата публикации: 2003-12-04.

Semiconductor device, metal laminated plate for fabricating circuit on semiconductor, and method of fabricating circuit

Номер патента: EP1255295A1. Автор: Kinji Toyo Kohan Co. Ltd. SAIJO,Kazuo Toyo Kohan Co. Ltd. YOSHIDA,Shinji Toyo Kohan Co. Ltd. OHSAWA,Hiroaki Toyo Kohan Co. Ltd. OKAMOTO. Владелец: Toyo Kohan Co Ltd. Дата публикации: 2002-11-06.

Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluation

Номер патента: US7443031B2. Автор: Kousaku Yano,Yoshiaki Kato,Hiroshi Masuda,Shinichi Domae. Владелец: Panasonic Corp. Дата публикации: 2008-10-28.

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Номер патента: KR20020093788A. Автор: 요시다가즈오,사이조긴지,오까모또히로아끼,오오사와신지. Владелец: 도요 고한 가부시키가이샤. Дата публикации: 2002-12-16.

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Номер патента: US20090111262A1. Автор: Kousaku Yano,Yoshiaki Kato,Hiroshi Masuda,Shinichi Domae. Владелец: Panasonic Corp. Дата публикации: 2009-04-30.

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Номер патента: US7642654B2. Автор: Kousaku Yano,Yoshiaki Kato,Hiroshi Masuda,Shinichi Domae. Владелец: Panasonic Corp. Дата публикации: 2010-01-05.

Semiconductor Device Having Filling Pattern Adjacent to Storage Structure And Methods Of Forming The Same

Номер патента: KR101196484B1. Автор: 마종완,권준모. Владелец: 삼성전자주식회사. Дата публикации: 2012-11-01.

Semiconductor device with t-gate of double deck structure and method of fabricating the same

Номер патента: KR101875513B1. Автор: 이정희,임병옥,조영우,이복형,김륜휘. Владелец: 한화시스템 주식회사. Дата публикации: 2018-07-09.

Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via and Method of Forming the Same

Номер патента: US20200006201A1. Автор: Chiou Wen-Chih,WU Tsang-Jiuh,Chen Hsin-Yu,YANG Ku-Feng,LIN Yung-Chi,Chung Ming-Tsu,Lo HsiaoYun,Shih Hong-Ye,Chen Chia-Yin. Владелец: . Дата публикации: 2020-01-02.

Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via and Method of Forming the Same

Номер патента: US20170011988A1. Автор: Chiou Wen-Chih,WU Tsang-Jiuh,Chen Hsin-Yu,YANG Ku-Feng,LIN Yung-Chi,Chung Ming-Tsu,Lo HsiaoYun,Shih Hong-Ye,Chen Chia-Yin. Владелец: . Дата публикации: 2017-01-12.

SEMICONDUCTOR DEVICE WITH ADVANCED PAD STRUCTURE RESISTANT TO PLASMA DAMAGE AND METHOD FOR FORMING THE SAME

Номер патента: US20140252623A1. Автор: WANG HUNG-CHIH,LIANG YAO-HSIANG. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2014-09-11.

Semiconductor device with variable composition low-k inter-layer dielectric and method of making

Номер патента: US6518646B1. Автор: LU You,Suzette K. Pangrle,Dawn M. Hopper,Richard J. Huang,Calvin T. Gabriel. Владелец: Advanced Micro Devices Inc. Дата публикации: 2003-02-11.

Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same

Номер патента: CN101241899B. Автор: 元皙俊,金泰范. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-01-04.

Semiconductor device having diffusion barrier layer at source/drain regions and method of forming the same

Номер патента: KR100467024B1. Автор: 이신애,김성민,최시영,김성호,박동건,이병찬,이창섭,최정동. Владелец: 삼성전자주식회사. Дата публикации: 2005-01-24.

Group III nitride based layer sequence, semiconductor device comprising a group III nitride based layer sequence and methods of fabrication

Номер патента: DE102010056409A1. Автор: Dr. Dadgar Armin,Prof. Dr. Krost Alois. Владелец: Azzurro Semiconductors AG. Дата публикации: 2012-06-28.

Semiconductor device having insulating film of fluorine-added carbon film and method of producing the same

Номер патента: IL137212A. Автор: . Владелец: Tokyo Electron Ltd. Дата публикации: 2003-09-17.

Semiconductor device including a conductive layer buried in an opening and method of manufacturing the same

Номер патента: US20070085125A1. Автор: Hirofumi Inoue,Masahito Shinohe. Владелец: Toshiba Corp. Дата публикации: 2007-04-19.

Semiconductor device having parallel conductive lines including a cut portion and method of manufacturing the same

Номер патента: US9263323B2. Автор: Masahisa Sonoda. Владелец: Toshiba Corp. Дата публикации: 2016-02-16.

Semiconductor device having contact between ruthenium layer and metal layer and method for manufacturing the same

Номер патента: KR20030025494A. Автор: 이승환,최길현,이윤정,박희숙. Владелец: 삼성전자주식회사. Дата публикации: 2003-03-29.

Semiconductor device comprising work function metal pattern in boundary region and method for fabricating the same

Номер патента: US10998324B2. Автор: Jin Woo Hong,Ki Wook JUNG,Seok Han PARK,Ki Seok Lee,Ho In Lee,Dong Oh KIM,Chan Sic YOON,Ju Yeon JANG,Je Min PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-04.

Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same

Номер патента: US20080179753A1. Автор: Seok-jun Won,Andrew-tae Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-07-31.

Semiconductor device structures including damascene trenches with conductive structures and related method

Номер патента: US20120007209A1. Автор: Howard E. Rhodes. Владелец: Micron Technology Inc. Дата публикации: 2012-01-12.

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Номер патента: US20180019246A1. Автор: Kim Jun-Kyum,Seo Jung-Woo,Kwon Sung-Un. Владелец: . Дата публикации: 2018-01-18.

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Номер патента: US20170025419A1. Автор: Kim Jun-Kyum,Seo Jung-Woo,Kwon Sung-Un. Владелец: . Дата публикации: 2017-01-26.

Method of manufacturing semiconductor devices having contact plugs overlapping associated bitline structures and contact holes

Номер патента: US20190131307A1. Автор: Sung-Un Kwon,Jung-Woo Seo,Jun-Kyum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-05-02.

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Номер патента: US20190386009A1. Автор: Kim Jun-Kyum,Seo Jung-Woo,Kwon Sung-Un. Владелец: . Дата публикации: 2019-12-19.

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Номер патента: US9786672B2. Автор: Sung-Un Kwon,Jung-Woo Seo,Jun-Kyum Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-10.

Package structure and method for fabricating the same

Номер патента: US20240128120A1. Автор: Chung-Kuang Lin,Hsiang-Wei Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-18.

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Номер патента: US12009324B2. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-06-11.

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Номер патента: US11362066B2. Автор: Ming-Fa Chen,Hsien-Wei Chen,Ying-Ju Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-14.

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Номер патента: US20230328971A1. Автор: Tieh-Chiang Wu,Lingxin ZHU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-12.

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Номер патента: US11855021B2. Автор: Chen-Hua Yu,Wen-Chih Chiou,Yung-Chi Lin,Tsang-Jiuh Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

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Номер патента: US20230361075A1. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Min-Feng KAO,Hsing-Chih LIN,Zheng-Xun Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

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Номер патента: US11830921B2. Автор: Qiongyang ZHAO,Anni WANG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2023-11-28.

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Номер патента: US11217570B2. Автор: Po-Hao Tsai,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Li-Hsien HUANG,Chi-Hsi Wu,Ming-Shih Yeh,Ta-Wei Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-04.

Method for fabricating semiconductor interconnect structure and semiconductor structure thereof

Номер патента: US11769674B2. Автор: Pingheng WU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-26.

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Номер патента: US20200251456A1. Автор: Po-Hao Tsai,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Li-Hsien HUANG,Chi-Hsi Wu,Ming-Shih Yeh,Ta-Wei Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-08-06.

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Номер патента: US20220157957A1. Автор: JISONG Jin,SUBHASH KUCHANURI,Abraham Yoo. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2022-05-19.

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Номер патента: US11837587B2. Автор: Po-Hao Tsai,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Li-Hsien HUANG,Chi-Hsi Wu,Ming-Shih Yeh,Ta-Wei Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-05.

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Номер патента: US20230371287A1. Автор: Ying Song,Zhaopei CUI. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-16.

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Номер патента: US20240072021A1. Автор: Po-Hao Tsai,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Li-Hsien HUANG,Chi-Hsi Wu,Ming-Shih Yeh,Ta-Wei Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

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Номер патента: US20210166943A1. Автор: Wang Wei,He Qiyang,Su Bo,SUN Linlin. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-06-03.

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Номер патента: US11980019B2. Автор: Han Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-05-07.

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Номер патента: US20210020581A1. Автор: Yu-Wei Lin,Ching-Hua Hsieh,Chih-Wei Lin,Chun-Cheng Lin,Chun-Yen Lan,Hsaing-Pin Kuan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-01-21.

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Номер патента: US20230275039A1. Автор: Chen Xu,Yaojian Lin,Chenye He,Danfeng Yang. Владелец: JCET Group Co Ltd. Дата публикации: 2023-08-31.

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Номер патента: US20230386845A1. Автор: Yi Tang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-30.

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Номер патента: EP4451317A1. Автор: LIU Yuan,Tianyi Zhang,Ming Pan,Yanjun Chen,Can Zhong,Fengjie Tang,Peng GOU,Xiran ZUO,Guidong JIN. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2024-10-23.

Semiconductor structure and method for manufacturing semiconductor structure

Номер патента: EP4412422A1. Автор: XIANG Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-08-07.

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Номер патента: US20230061921A1. Автор: Deyuan Xiao,GuangSu SHAO,Weiping BAI,Yunsong QIU. Владелец: Beijing Superstring Academy of Memory Technology. Дата публикации: 2023-03-02.

Method of fabricating semiconductor device

Номер патента: US20240120329A1. Автор: Yifei Yan. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-04-11.

Method for preparing semiconductor device structure with air gap

Номер патента: US11895826B2. Автор: Chin-Te Kuo. Владелец: Nanya Technology Corp. Дата публикации: 2024-02-06.

Method for preparing semiconductor device structure with air gap

Номер патента: US20220037331A1. Автор: Chin-Te Kuo. Владелец: Nanya Technology Corp. Дата публикации: 2022-02-03.

Semiconductor device including hydrogen introduction layer provided on semiconductor substrate and method of forming the same

Номер патента: US20240170327A1. Автор: Hidekazu Goto,Shinichi Nakata,Mitsunari Sukekawa. Владелец: Micron Technology Inc. Дата публикации: 2024-05-23.

Semiconductor device having an insulating trench penetrating the semiconductor device and metallic tracks for galvanically isolated signal transmission and method for its production

Номер патента: DE102008012858B4. Автор: Martin Feldtkeller,Uwe Wahl. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2016-08-04.

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Номер патента: US20140302663A1. Автор: KIM Hyung-Hwan,Pyo Seung-Seok,CHOI Bong-Ho,LEE Jin-Yul. Владелец: . Дата публикации: 2014-10-09.

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Номер патента: US7651921B2. Автор: Wolfgang Rauscher. Владелец: NXP BV. Дата публикации: 2010-01-26.

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Номер патента: US20020011656A1. Автор: Leland Swanson,Elizabeth Jacobs. Владелец: Texas Instruments Inc. Дата публикации: 2002-01-31.

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Номер патента: US09761682B2. Автор: Yasuhiro Okamoto. Владелец: Renesas Electronics Corp. Дата публикации: 2017-09-12.

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Номер патента: US20220165684A1. Автор: Kai-Kuang Ho,Jen-Hsien Chang,Meng-Ting Chiang. Владелец: United Microelectronics Corp. Дата публикации: 2022-05-26.

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Номер патента: US6933211B2. Автор: Tetsuya Kurosawa. Владелец: Toshiba Corp. Дата публикации: 2005-08-23.

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Номер патента: US20040130004A1. Автор: Tetsuya Kurosawa. Владелец: Individual. Дата публикации: 2004-07-08.

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Номер патента: US12094720B2. Автор: Chung-Yen Chou. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-17.

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Номер патента: US20200303384A1. Автор: Riichiro Shirota,Masaru Yano. Владелец: Winbond Electronics Corp. Дата публикации: 2020-09-24.

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Номер патента: US8164185B2. Автор: Young-Woo Cho,Sang-Hoon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-04-24.

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Номер патента: PL123900B1. Автор: Robert H Dawson,George L Schnable. Владелец: RCA Corp. Дата публикации: 1982-12-31.

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Номер патента: US9318327B2. Автор: Michael John Bergmann,David Todd Emerson,Kevin Ward Haberern,Jason Hansen. Владелец: Cree Inc. Дата публикации: 2016-04-19.

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Номер патента: DE19946153A1. Автор: Union Teng. Владелец: Promos Technologies Inc. Дата публикации: 2001-04-19.

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Номер патента: EP2517249A1. Автор: Munaf Rahimo. Владелец: ABB TECHNOLOGY AG. Дата публикации: 2012-10-31.

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Номер патента: US20230260956A1. Автор: Mir IM. Владелец: SK hynix Inc. Дата публикации: 2023-08-17.

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Номер патента: US09859296B2. Автор: Zhiliang Xia,Sung-Min Hwang,Se-Jun Park,Jang-Gn Yun,Ahn-Sik Moon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-01-02.

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Номер патента: US20080149926A1. Автор: Chang Eun Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-06-26.

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Номер патента: US20240332136A1. Автор: Thorsten Scharf,Egbert Lamminger,Michal Chajneta,Marco Bäßler. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2024-10-03.

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Номер патента: US20070161177A1. Автор: Hiroyuki Uchiyama. Владелец: Elpida Memory Inc. Дата публикации: 2007-07-12.

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Номер патента: US20060087043A1. Автор: Naoki Hirasawa,Sadahisa Onimaru,Hirohito Matsui,Naohiko Hirano,Kuniaki Mamitsu. Владелец: Nippon Soken Inc. Дата публикации: 2006-04-27.

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Номер патента: US9276028B2. Автор: Mitsuhiro Yomori. Владелец: Canon Inc. Дата публикации: 2016-03-01.

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Номер патента: WO2023076066A1. Автор: Kunal R. Parekh. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2023-05-04.

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Номер патента: US6064114A. Автор: Leo M. Higgins, III. Владелец: Motorola Inc. Дата публикации: 2000-05-16.

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Номер патента: US5625218A. Автор: Yasunori Taga,Hideya Yamadera,Yoshihiko Isobe,Hirofumi Abe,Makio Iida,Takeshi Ohwaki,Makoto Ohkawa. Владелец: Toyota Central R&D Labs Inc. Дата публикации: 1997-04-29.

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Номер патента: US7321163B2. Автор: Makoto Terui. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2008-01-22.

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Номер патента: US7482202B2. Автор: Makoto Terui. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2009-01-27.

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Номер патента: US20080090330A1. Автор: Makoto Terui. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2008-04-17.

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Номер патента: US20220140265A1. Автор: Mari Sasaki,Junichi Takeya,Shunichiro Watanabe,Tatsuyuki MAKITA. Владелец: University of Tokyo NUC. Дата публикации: 2022-05-05.

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Номер патента: US20150097185A1. Автор: Byung Wook Bae. Владелец: SK hynix Inc. Дата публикации: 2015-04-09.

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Номер патента: US20060286485A1. Автор: Joseph Cheng. Владелец: Boardtek Electronics Corp. Дата публикации: 2006-12-21.

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Номер патента: WO2003019675A1. Автор: Richard A. Mann. Владелец: CONEXANT SYSTEMS, INC.. Дата публикации: 2003-03-06.

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Номер патента: US20230395557A1. Автор: Wu-Der Yang. Владелец: Nanya Technology Corp. Дата публикации: 2023-12-07.

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Номер патента: US10896886B2. Автор: Jonathan S. Hacker,Christopher J. Gambee,Chandra S. Tiwari,Mayukhee Das. Владелец: Micron Technology Inc. Дата публикации: 2021-01-19.

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Номер патента: US10262961B2. Автор: Jonathan S. Hacker,Christopher J. Gambee,Chandra S. Tiwari,Mayukhee Das. Владелец: Micron Technology Inc. Дата публикации: 2019-04-16.

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Номер патента: WO2019032146A1. Автор: Jonathan S. Hacker,Christopher J. Gambee,Chandra S. Tiwari,Mayukhee Das. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2019-02-14.

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Номер патента: US7514320B2. Автор: Hiroyuki Uchiyama. Владелец: Elpida Memory Inc. Дата публикации: 2009-04-07.

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Номер патента: US20190051623A1. Автор: Jonathan S. Hacker,Christopher J. Gambee,Chandra S. Tiwari,Mayukhee Das. Владелец: Micron Technology Inc. Дата публикации: 2019-02-14.

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Номер патента: US20200152647A1. Автор: Yao-Ting Tsai,Chih-Jung Ni,Chuan-Chi CHOU. Владелец: Winbond Electronics Corp. Дата публикации: 2020-05-14.

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Номер патента: US20220189975A1. Автор: Yao-Ting Tsai,Chih-Jung Ni,Chuan-Chi CHOU. Владелец: Winbond Electronics Corp. Дата публикации: 2022-06-16.

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Номер патента: US20240038613A1. Автор: Arun Ramakrishnan,Liming Tsau,Reza Sharifi,Dharmendra Saraswat,Sam Zhao,Sam Karikalan,Mayank Mayukh. Владелец: Avago Technologies International Sales Pte Ltd. Дата публикации: 2024-02-01.

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Номер патента: US11764161B2. Автор: Jong Sik Paek,Yeongbeom Ko,Youngik Kwon. Владелец: Micron Technology Inc. Дата публикации: 2023-09-19.

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Номер патента: US09997580B2. Автор: Libin LIU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-06-12.

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Номер патента: US09691826B2. Автор: Junsheng CHEN,Haidong WU. Владелец: Ordos Yuansheng Optoelectronics Co Ltd. Дата публикации: 2017-06-27.

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Номер патента: US09659911B1. Автор: Chia-Wei Chang,Li-Chih Fang,Kuo-Ting Lin,Yong-Cheng Chuang. Владелец: Powertech Technology Inc. Дата публикации: 2017-05-23.

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Номер патента: US09911702B2. Автор: Kuang-Hsiung Chen,Tien-Szu Chen,Sheng-Ming Wang,Yu-Ying Lee. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-03-06.

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Номер патента: US7863750B2. Автор: Osamu Okada,Osamu Kuwabara,Junji Shiota,Nobumitsu Fujii,Taisuke Koroku. Владелец: Casio Computer Co Ltd. Дата публикации: 2011-01-04.

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Номер патента: TW202000827A. Автор: 彼谷美千子,山中大輔. Владелец: 日商日立化成股份有限公司. Дата публикации: 2020-01-01.

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Номер патента: US20240008240A1. Автор: Chih-Cheng Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-04.

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Номер патента: US20230352482A1. Автор: Harry-Hak-Lay Chuang,Wei-Cheng Wu,Li-Feng Teng,Li-Jung LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-02.

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Номер патента: US09496380B2. Автор: Yuichi Minoura,Toshihide Kikkawa,Toshihiro Ohki. Владелец: Fujitsu Ltd. Дата публикации: 2016-11-15.

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Номер патента: US20160372486A1. Автор: Toshiaki Iwamatsu,Ryuta Tsuchiya. Владелец: Renesas Electronics Corp. Дата публикации: 2016-12-22.

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Номер патента: US20160156350A1. Автор: Toshiaki Iwamatsu,Ryuta Tsuchiya. Владелец: Renesas Electronics Corp. Дата публикации: 2016-06-02.

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Номер патента: TW372347B. Автор: Chih-Chen Cho. Владелец: Texas Instruments Inc. Дата публикации: 1999-10-21.

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Номер патента: US20230007974A1. Автор: Tzung-Han Lee. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-12.

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Номер патента: US20230335609A1. Автор: Chin-Chia Kuo,Ming-Hua Tsai,Wei Hsuan Chang. Владелец: United Microelectronics Corp. Дата публикации: 2023-10-19.

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Номер патента: US20230189518A1. Автор: Heng-Chia Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-06-15.

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Номер патента: US20210175368A1. Автор: Yu-Hsuan CHANG,Hsiu-Fang Lo. Владелец: Mosel Vitelic Inc. Дата публикации: 2021-06-10.

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Номер патента: US20180040618A1. Автор: Lee Tung Ying,Chang Chih-Hao,Guo Wen-Huei,Chang Shou-Zen. Владелец: . Дата публикации: 2018-02-08.

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Номер патента: US20180350802A1. Автор: Lee Tung Ying,Chang Chih-Hao,Guo Wen-Huei,Chang Shou-Zen. Владелец: . Дата публикации: 2018-12-06.

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Номер патента: US10332882B2. Автор: Wei-Cheng Wu,Harry Hak-Lay Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-25.

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Номер патента: KR100613349B1. Автор: 임태홍. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2006-08-21.

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Номер патента: US20170069725A1. Автор: Jan Chia-Hong,Park Joodong,Hafez Walid M.,Bhimarasetti Gopinath,Han Weimin,COTNER RAYMOND E.. Владелец: . Дата публикации: 2017-03-09.

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Номер патента: US20150171179A1. Автор: ITATANI Hideharu,Ogawa Arito,HORII Sadayoshi. Владелец: HITACHI KOKUSAI ELECTRIC INC.. Дата публикации: 2015-06-18.

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Номер патента: US20190252393A1. Автор: Hong Jin Woo,Kim Dong Oh,Yoon Chan Sic,Lee Ki Seok,PARK Seok Han,JUNG Ki Wook,JANG Ju Yeon,PARK Je Min,LEE Ho ln. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2019-08-15.

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Номер патента: US20200295013A1. Автор: Hong Jin Woo,Kim Dong Oh,Yoon Chan Sic,Lee Ki Seok,PARK Seok Han,JUNG Ki Wook,LEE Ho In,JANG Ju Yeon,PARK Je Min. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2020-09-17.

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Номер патента: KR100543472B1. Автор: 리밍. Владелец: 삼성전자주식회사. Дата публикации: 2006-01-20.

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Номер патента: US6492264B2. Автор: Noriaki Oda. Владелец: NEC Corp. Дата публикации: 2002-12-10.

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Номер патента: US20240178282A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-05-30.

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Номер патента: US20240178281A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-05-30.

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Номер патента: US20210193794A1. Автор: Kai Cheng,Kai Liu. Владелец: Enkris Semiconductor Inc. Дата публикации: 2021-06-24.

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Номер патента: CN101202233A. Автор: 三重野文健. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2008-06-18.

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Номер патента: US20120091458A1. Автор: MIENO FUMITAKE. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2012-04-19.

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Номер патента: CN103730489A. Автор: 汪涛,谢刚,崔京京,汤岑,郭清,盛况. Владелец: Industrial Technology Research Institute of ZJU. Дата публикации: 2014-04-16.

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Номер патента: FR2498815A1. Автор: Paul Robert Jay. Владелец: Thomson CSF SA. Дата публикации: 1982-07-30.

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Номер патента: US8143666B2. Автор: MIENO FUMITAKE. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2012-03-27.

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Номер патента: US7625796B2. Автор: MIENO FUMITAKE. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2009-12-01.

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Номер патента: US20230124686A1. Автор: Philippe Renaud,Bernhard Grote,Bruce McRae Green. Владелец: NXP USA Inc. Дата публикации: 2023-04-20.

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Номер патента: US20230134265A1. Автор: Peng Xiang,Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2023-05-04.

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Номер патента: US20230387287A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2023-11-30.

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Номер патента: US20200294984A1. Автор: Ming-Fa Chen,Hsien-Wei Chen,Sung-Feng Yeh,Chi-Hwang Tai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-09-17.

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Номер патента: US09478486B2. Автор: Sun Mi Kim,KyungHoon Lee,OhHan Kim. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-10-25.

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Номер патента: US20230307391A1. Автор: Ching-Hua Hsieh,Chao-Wen Shih,Han-Ping Pu,Meng-Tse Chen,Sheng-Hsiang Chiu,Albert Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

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Номер патента: US12057415B2. Автор: Ching-Hua Hsieh,Chao-Wen Shih,Han-Ping Pu,Meng-Tse Chen,Sheng-Hsiang Chiu,Albert Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

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Номер патента: US20210257246A1. Автор: Hsin-ying Ho,Cheng-Ling Huang,Ying-Chung Chen,Chang Chin TSAI,Wei Ling MA. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-08-19.

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Номер патента: US20240258200A1. Автор: Chin-Shen LIN,Hao-Tien KAN,Ren-Zheng Liao,Yung-Fong Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

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Номер патента: US09412686B2. Автор: Chien-Li Kuo,Ming-Tse Lin,Kuei-Sheng Wu. Владелец: United Microelectronics Corp. Дата публикации: 2016-08-09.

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Номер патента: US20230041760A1. Автор: Jong Sik Paek,Youngik Kwon. Владелец: Micron Technology Inc. Дата публикации: 2023-02-09.

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Номер патента: US10741508B2. Автор: Ching-Hua Hsieh,Chao-Wen Shih,Han-Ping Pu,Meng-Tse Chen,Sheng-Hsiang Chiu,Albert Wan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-08-11.

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Номер патента: US20110306178A1. Автор: Seung Joo Baek. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-12-15.

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Номер патента: US11854837B2. Автор: Ming-Chih Yew,Shin-puu Jeng,Chien-Sheng Chen,Po-Yao Lin,Po-Chen LAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

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Номер патента: US20230386863A1. Автор: Ming-Chih Yew,Shin-puu Jeng,Chien-Sheng Chen,Po-Yao Lin,Po-Chen LAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

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Номер патента: US20240088111A1. Автор: Wu-Der Yang. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-14.

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Номер патента: US20240088113A1. Автор: Wu-Der Yang. Владелец: Nanya Technology Corp. Дата публикации: 2024-03-14.

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Номер патента: KR101068637B1. Автор: 서대영. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2011-09-28.

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Номер патента: US20210125945A1. Автор: Ting Ruei CHEN,Guo-Cheng Liao. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2021-04-29.

Double-sided chip on film packaging structure and manufacturing method thereof

Номер патента: US09589883B2. Автор: Ching-Yung Chen. Владелец: Raydium Semiconductor Corp. Дата публикации: 2017-03-07.

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Номер патента: US20160064314A1. Автор: Chien-Li Kuo,Ming-Tse Lin,Kuei-Sheng Wu. Владелец: United Microelectronics Corp. Дата публикации: 2016-03-03.

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Номер патента: US12033955B2. Автор: Yi Liu,Zhen Gong,Man Bao. Владелец: JCET Group Co Ltd. Дата публикации: 2024-07-09.

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Номер патента: US20230282599A1. Автор: Yaojian Lin,Shuo Liu,Shasha Zhou,Danfeng Yang. Владелец: JCET Group Co Ltd. Дата публикации: 2023-09-07.

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Номер патента: US20240120325A1. Автор: Pei-Chun Tsai,Hung-Hsin Hsu,Shang-Yu Chang Chien,Chia-Ling Lee. Владелец: Powertech Technology Inc. Дата публикации: 2024-04-11.

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Номер патента: US20230352449A1. Автор: Yenheng CHEN,Chengchung LIN. Владелец: SJ Semiconductor Jiangyin Corp. Дата публикации: 2023-11-02.

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Номер патента: US11749594B2. Автор: Yu-Min LIANG,Wei-Yu Chen,Chi-Yang Yu,Chin-Liang Chen,Jiun-Yi Wu,Kuan-Lin Ho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

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Номер патента: US20190189541A1. Автор: Xiaochun Tan. Владелец: Hefei Smat Technology Co Ltd. Дата публикации: 2019-06-20.

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Номер патента: US20240266245A1. Автор: Jian Wang,Jifeng Li,Haixin Huang,Meng MEI,Sijie Li. Владелец: Beijing Youzhuju Network Technology Co Ltd. Дата публикации: 2024-08-08.

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Номер патента: US20230282531A1. Автор: HONG XU,XIA XU,Haijie Chen. Владелец: Jcet Advanced Packaging Co Ltd. Дата публикации: 2023-09-07.

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Номер патента: US12112991B1. Автор: Kun Zhang,Qingwen Deng,Ruyun Zhang. Владелец: Zhejiang Lab. Дата публикации: 2024-10-08.

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Номер патента: US20240339443A1. Автор: Shang-Yu Chang Chien,Nan-Chun Lin. Владелец: Powertech Technology Inc. Дата публикации: 2024-10-10.

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Номер патента: US20240363365A1. Автор: Szu-Wei Lu,Chih-hao Chen,Li-Hui Cheng,Ping-Yin Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

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Номер патента: US20240363456A1. Автор: Liang-Ju Chien,Chin-Sheng Chang,Bor-Shiun Lee,Lung-Tai Chen. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2024-10-31.

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Номер патента: US09805996B2. Автор: Shih-Ping Hsu,Che-Wei Hsu,Chin-Ming Liu,Chih-Kuai Yang. Владелец: Phoenix Pioneer Technology Co Ltd. Дата публикации: 2017-10-31.

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Номер патента: US20230163034A1. Автор: Chin-Sheng Chang,Bor-Shiun Lee,Lung-Tai Chen,Chih-Hsiang Ko. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2023-05-25.

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Номер патента: US20180366381A1. Автор: Yangyuan LI,Shaobo DING. Владелец: Microarray Microelectronics Corp ltd. Дата публикации: 2018-12-20.

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Номер патента: US20230290650A1. Автор: Szu-Wei Lu,Chih-hao Chen,Li-Hui Cheng,Ping-Yin Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-14.

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Номер патента: US12037526B2. Автор: Penghao GU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-07-16.

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Номер патента: US12068173B2. Автор: Szu-Wei Lu,Chih-hao Chen,Li-Hui Cheng,Ping-Yin Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

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Номер патента: US12082401B2. Автор: Xinman CAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-03.

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Номер патента: US20240347348A1. Автор: Shang-Yu Chang Chien. Владелец: Powertech Technology Inc. Дата публикации: 2024-10-17.

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Номер патента: US20240363601A1. Автор: Jian Xu,Soo Won Lee,Huanhuan YUAN,Zelong Yu. Владелец: Stats Chippac Semiconductor (jiangyin) Co Ltd. Дата публикации: 2024-10-31.

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Номер патента: KR101586361B1. Автор: 남석우,김봉현,임한진,서재홍,전택수. Владелец: 삼성전자주식회사. Дата публикации: 2016-01-18.

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Номер патента: KR101400061B1. Автор: 윤관영. Владелец: 삼성전자주식회사. Дата публикации: 2014-06-27.

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Номер патента: KR100809698B1. Автор: 김용현,김중현,신화수,이성열,방효재,한성찬. Владелец: 삼성전자주식회사. Дата публикации: 2008-03-06.

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Номер патента: US09443921B2. Автор: Chi-Han Chen. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2016-09-13.

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Номер патента: US20150243632A1. Автор: Inoue Hiroshi,Katsumata Akio,SAWACHI Shigenori,Yamagata Osamu. Владелец: . Дата публикации: 2015-08-27.

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Номер патента: US20150332937A1. Автор: Inoue Hiroshi,Katsumata Akio,SAWACHI Shigenori,Yamagata Osamu. Владелец: . Дата публикации: 2015-11-19.

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Номер патента: US9196507B1. Автор: Hiroshi Inoue,Shigenori Sawachi,Osamu Yamagata,Akio Katsumata. Владелец: J Devices Corp. Дата публикации: 2015-11-24.

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Номер патента: US20240371716A1. Автор: LI Tao,Shanshan Zhao,Baohua Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-07.

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Номер патента: US20020037643A1. Автор: Kazunari Ishimaru. Владелец: Toshiba Corp. Дата публикации: 2002-03-28.

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Номер патента: US20130099368A1. Автор: Kwon Whan Han. Владелец: SK hynix Inc. Дата публикации: 2013-04-25.

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Номер патента: US8823112B2. Автор: Masaaki Shinohara. Владелец: Renesas Electronics Corp. Дата публикации: 2014-09-02.

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Номер патента: US20120319209A1. Автор: Masaaki Shinohara. Владелец: Renesas Electronics Corp. Дата публикации: 2012-12-20.

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Номер патента: US7298050B2. Автор: Kazuaki Kurihara,John D. Baniecki,Takeshi Shioga. Владелец: Fujitsu Ltd. Дата публикации: 2007-11-20.

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Номер патента: TW200919668A. Автор: Chung-Pang Chi. Владелец: Chipmos Technologies Bermuda. Дата публикации: 2009-05-01.

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Номер патента: TWI371841B. Автор: Chung Pang Chi. Владелец: Chipmos Technologies Bermuda. Дата публикации: 2012-09-01.

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Номер патента: US20140117566A1. Автор: Jay-Bok Choi,Kyu-Hyun Lee,Mi-Jeong JANG,Young-jin Choi,Ju-Young HUH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-01.

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Номер патента: US20210143073A1. Автор: Paek Jong Sik,Kwon Youngik. Владелец: . Дата публикации: 2021-05-13.

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Номер патента: US20190228984A1. Автор: Agam Moshe,Janssens Johan Camiel Julia,Suwhanov Agajan,GREENWOOD Bruce,HOSE Sallie. Владелец: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. Дата публикации: 2019-07-25.

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Номер патента: KR101974350B1. Автор: 최재복,최영진,이규현,허주영,장미정. Владелец: 삼성전자주식회사. Дата публикации: 2019-05-02.

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Номер патента: US7245018B1. Автор: Keiji Sato,Shunpei Yamazaki,Toru Takayama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2007-07-17.

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Номер патента: US8729675B1. Автор: Jay-Bok Choi,Kyu-Hyun Lee,Mi-Jeong JANG,Young-jin Choi,Ju-Young HUH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-20.

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Номер патента: US6479322B2. Автор: Yasuyuki Nakajima,Takatoshi Hagiwara,Michiaki Sugiyama,Youichi Kawata,Kouji Koizumi,Atsushi Fujishima. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2002-11-12.

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Номер патента: CN104766846B. Автор: 周睿,保罗·杰罗姆·格罗斯克罗伊茨,凯利·詹姆斯·布龙克,杰里迈亚·约翰·科皮尼斯. Владелец: Rockwell Automation Technologies Inc. Дата публикации: 2017-12-08.

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Номер патента: US20030205812A1. Автор: Leland Swanson,Elizabeth Jacobs. Владелец: Individual. Дата публикации: 2003-11-06.

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Номер патента: US20080014666A1. Автор: Keiji Sato,Shunpei Yamazaki,Toru Takayama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2008-01-17.

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Номер патента: KR0152370B1. Автор: 가오루 미까기. Владелец: 닛본덴기 가부시끼가이샤. Дата публикации: 1998-12-01.

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Номер патента: US20230170274A1. Автор: Cheng Yang. Владелец: Jcet Management Co Ltd. Дата публикации: 2023-06-01.

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Номер патента: US20240030121A1. Автор: Shang-Yu Chang Chien. Владелец: Powertech Technology Inc. Дата публикации: 2024-01-25.

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Номер патента: US20200203268A1. Автор: XIAOFENG Xu,Beng Beng Lim. Владелец: Delta Electronics International Singapore Pte Ltd. Дата публикации: 2020-06-25.

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Номер патента: US20230290905A1. Автор: Kai Cheng,Liyang Zhang. Владелец: Enkris Semiconductor Inc. Дата публикации: 2023-09-14.

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Номер патента: US20220020684A1. Автор: Hsiao-Tsung Yen,Ka-Un Chan. Владелец: Realtek Semiconductor Corp. Дата публикации: 2022-01-20.

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Номер патента: US20240120374A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-04-11.

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Номер патента: US20210225832A1. Автор: Hsiu-Fang Lo,Chi-Neng Chou,Yung-An Sun. Владелец: Mosel Vitelic Inc. Дата публикации: 2021-07-22.

Memory, semiconductor structure, and manufacturing method thereof

Номер патента: US20230301056A1. Автор: Runping WU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-21.

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Номер патента: US09614017B2. Автор: Yifan Wang,Wenhui Li. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-04-04.

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Номер патента: US09966383B2. Автор: LIANG Yi,Shen-De Wang,Ko-Chi Chen. Владелец: United Microelectronics Corp. Дата публикации: 2018-05-08.

Electrically conductive structure and manufacturing method thereof, array substrate, display device

Номер патента: US10204931B2. Автор: Na Zhao. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2019-02-12.

SEMICONDUCTOR DEVICE WITH SILICON NITRIDE FILM ON NITRIDE SEMICONDUCTOR LAYER AND MANUFACTURING METHOD THEREOF

Номер патента: US20170358652A1. Автор: Okamoto Yasuhiro. Владелец: . Дата публикации: 2017-12-14.

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Номер патента: US20150348967A1. Автор: Lee Tung Ying,Chang Chih-Hao,Guo Wen-Huei,Chang Shou-Zen. Владелец: . Дата публикации: 2015-12-03.

Semiconductor Device with First and Second Field-Effect Structures and an Integrated Circuit Including the Semiconductor Device

Номер патента: US20130264651A1. Автор: Mauder Anton,Hirler Franz,Weyers Joachim. Владелец: . Дата публикации: 2013-10-10.

SEMICONDUCTOR DEVICE USING Ge AND III-V GROUP COMPOUND SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME

Номер патента: KR101566224B1. Автор: 김병주,고대홍. Владелец: 연세대학교 산학협력단. Дата публикации: 2015-11-05.

SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION METAL OXIDE SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD FOR THE SAME

Номер патента: US20130302957A1. Автор: NAKAJIMA Toshio. Владелец: . Дата публикации: 2013-11-14.

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Номер патента: US20140183649A1. Автор: JI Yun-Hyuck,LEE Seung-Mi. Владелец: SK HYNIX INC.. Дата публикации: 2014-07-03.

Semiconductor device employing a transistor having a recessed channel region and methods of fabricating the same

Номер патента: KR100843711B1. Автор: 최용진,장성호,이광우,강민성. Владелец: 삼성전자주식회사. Дата публикации: 2008-07-04.

Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Номер патента: US8659057B2. Автор: David C. Sheridan,Andrew Ritenour. Владелец: Power Integrations Inc. Дата публикации: 2014-02-25.

Semiconductor device having d mode jfet and e mode jfet and method for manufacturing the same

Номер патента: US20110156053A1. Автор: Naohiro Sugiyama,Rajesh Kumar Malhan. Владелец: Denso Corp. Дата публикации: 2011-06-30.

Semiconductor structure and formation method thereof

Номер патента: US20230422466A1. Автор: Deyuan Xiao,GuangSu SHAO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-28.

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Номер патента: US20220020749A1. Автор: Jingwen Lu,Bingyu ZHU,Haihan Hung. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-01-20.

Semiconductor structure and manufacturing method thereof

Номер патента: US20240015957A1. Автор: Li Ding. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-11.

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Номер патента: US20230363141A1. Автор: Zhaohong LV. Владелец: Changxin Jidian Beijing Memory Technologies Co Ltd. Дата публикации: 2023-11-09.

Semiconductor package and manufacturing method thereof

Номер патента: US20220148987A1. Автор: No Sun Park,Jong Sik Paek. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2022-05-12.

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Номер патента: US20200328170A1. Автор: No Sun Park,Jong Sik Paek. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2020-10-15.

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Номер патента: US11842970B2. Автор: No Sun Park,Jong Sik Paek. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-12-12.

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Номер патента: US20240258253A1. Автор: No Sun Park,Jong Sik Paek. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-08-01.

Semiconductor package and manufacturing method thereof

Номер патента: US09929113B2. Автор: No Sun Park,Jong Sik Paek. Владелец: Amkor Technology Inc. Дата публикации: 2018-03-27.

Semiconductor package and manufacturing method thereof

Номер патента: US09466580B2. Автор: No Sun Park,Jong Sik Paek. Владелец: Amkor Technology Inc. Дата публикации: 2016-10-11.

Mim capacitor of semiconductor device and manufacturing method thereof

Номер патента: US20100155890A1. Автор: Jong-Yong Yun. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-06-24.

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Номер патента: US20070210300A1. Автор: Kenichi Kawaguchi. Владелец: Fujitsu Ltd. Дата публикации: 2007-09-13.

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Номер патента: US7875875B2. Автор: Kenichi Kawaguchi. Владелец: Fujitsu Ltd. Дата публикации: 2011-01-25.

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Номер патента: US09768139B2. Автор: Chien-Fan Chen,Wan-Ting CHIU. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2017-09-19.

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Номер патента: US11728456B2. Автор: Meng-yang CHEN,Yuan-Ting Lin. Владелец: Epistar Corp. Дата публикации: 2023-08-15.

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Номер патента: US20180145128A1. Автор: Yeur-Luen Tu,Szu-Yu Wang,Chih-Yu Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-24.

Semiconductor package and manufacturing method thereof

Номер патента: US20180240768A1. Автор: No Sun Park,Jong Sik Paek. Владелец: Amkor Technology Inc. Дата публикации: 2018-08-23.

Driving method of semiconductor device

Номер патента: US8339837B2. Автор: Kiyoshi Kato,Takanori Matsuzaki,Hiroki Inoue,Shuhei Nagatsuka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-12-25.

Package structure as well as manufacturing method therefor, and semiconductor device

Номер патента: EP4307370A1. Автор: LIANG Chen,Wei Jiang,Kai Li,Kai Tian. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-17.

Semiconductor devices having crack-inhibiting structures

Номер патента: US20210020585A1. Автор: Keizo Kawakita,Hyunsuk CHUN,Sheng Wei Yang,Shams U. Arifeen. Владелец: Micron Technology Inc. Дата публикации: 2021-01-21.

Semiconductor devices having crack-inhibiting structures

Номер патента: US20200211982A1. Автор: Keizo Kawakita,Hyunsuk CHUN,Sheng Wei Yang,Shams U. Arifeen. Владелец: Micron Technology Inc. Дата публикации: 2020-07-02.

Stacked semiconductor devices with topside and backside interconnect wiring

Номер патента: US20230352406A1. Автор: Tao Li,Ruilong Xie,Kisik Choi,Mukta Ghate Farooq,Liqiao QIN. Владелец: International Business Machines Corp. Дата публикации: 2023-11-02.

Semiconductor device having fuse and capacitor at the same level and method of fabricating the same

Номер патента: TWI276214B. Автор: Ki-Young Lee,Seung-Han Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-11.

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Номер патента: US20200365597A1. Автор: Ming-Chih Hsu,Yi-Hao Chien,Huang-Nan Chen. Владелец: Winbond Electronics Corp. Дата публикации: 2020-11-19.

Semiconductor devices with thermally isolating structures

Номер патента: WO2022026238A1. Автор: Shams U. Arifeen. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2022-02-03.

Semiconductor package substrate structure and manufacturing method thereof

Номер патента: US20110031617A1. Автор: Wen-Hung Hu. Владелец: Unimicron Technology Corp. Дата публикации: 2011-02-10.

Semiconductor package substrate structure and manufacturing method thereof

Номер патента: US7847400B2. Автор: Wen-Hung Hu. Владелец: Unimicron Technology Corp. Дата публикации: 2010-12-07.

Multi-chip stack structure and fabrication method thereof

Номер патента: US20080224289A1. Автор: Cheng-Hsu Hsiao,Chien-Ping Huang,Chin-Huang Chang,Chung-Lun Liu,Jung-Pin Huang. Владелец: Siliconware Precision Industries Co Ltd. Дата публикации: 2008-09-18.

Microminiature image acquisition and processing system packaging structure and preparation method thereof

Номер патента: US20240162267A1. Автор: Chen Xu,WEI Yan,Yaojian Lin,Jianyong Wu,Danfeng Yang. Владелец: JCET Group Co Ltd. Дата публикации: 2024-05-16.

Sensor package structure and manufacturing method thereof

Номер патента: US20230360987A1. Автор: You-Wei Chang,Chien-Chen Lee,Li-Chun Hung. Владелец: Tong Hsing Electronic Industries Ltd. Дата публикации: 2023-11-09.

Pixel structure and display method thereof, and display device

Номер патента: US09697760B2. Автор: Hongli Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-07-04.

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Номер патента: US20230223369A1. Автор: Zengyan Fan. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-13.

Signal transmission structure, package structure and bonding method thereof

Номер патента: US20070221403A1. Автор: Chia-Hsing Chou,Chih-Yi Huang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2007-09-27.

Light-emitting package structure and manufacturing method thereof

Номер патента: US20210125973A1. Автор: Chen-Hsiu Lin,Wen-Hsiang Lin,Chien-Feng Kao. Владелец: Lite On Opto Technology Changzhou Co Ltd. Дата публикации: 2021-04-29.

Semiconductor structure and manufacturing method thereof

Номер патента: US20230413532A1. Автор: Min Li. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-21.

Pixel structure of cmos image sensor and manufacturing method thereof

Номер патента: US20150295002A1. Автор: Xiaoxu KANG,Yuhang Zhao. Владелец: Shanghai IC R&D Center Co Ltd. Дата публикации: 2015-10-15.

Semiconductor structure and forming method thereof

Номер патента: US20210408006A1. Автор: Yong Lu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-12-30.

Pixel structure and manufacturing method thereof

Номер патента: US20130161604A1. Автор: Hsiang-Lin Lin,Kuo-Yu Huang,Te-Chun Huang. Владелец: AU OPTRONICS CORP. Дата публикации: 2013-06-27.

Pixel structure and fabricating method thereof

Номер патента: US8030652B2. Автор: Shih-Chin Chen,Ming-Hung Shih. Владелец: AU OPTRONICS CORP. Дата публикации: 2011-10-04.

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Номер патента: US20240347491A1. Автор: Kuo-Wei Tseng. Владелец: SITRONIX TECHNOLOGY CORP. Дата публикации: 2024-10-17.

Micro component structure and manufacturing method thereof, and transfer method for light-emitting diode chip

Номер патента: US12132032B2. Автор: Chun-Lung Hsiao,Xia DENG. Владелец: Chongqing Konka Photoelectric Technology Research Institute Co Ltd. Дата публикации: 2024-10-29.

Micro light-emitting diode package structure and forming method thereof

Номер патента: US20240355986A1. Автор: Shiou-Yi Kuo,Chih-Hao Lin,Guo-Yi SHIU,Wei-Yuan Ma,Cheng-Hsien Li,Chin-Hung Lo. Владелец: Lextar Electronics Corp. Дата публикации: 2024-10-24.

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Номер патента: US20240355736A1. Автор: Min WEN,Zhen Pan,Chengbao Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-24.

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Номер патента: US12132076B2. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-29.

Thin heat pipe structure and manufacturing method thereof

Номер патента: US09802240B2. Автор: Hsiu-Wei Yang. Владелец: Asia Vital Components Co Ltd. Дата публикации: 2017-10-31.

Sensor chip package structure and manufacturing method thereof

Номер патента: US09741875B2. Автор: Chi-Chih Shen,Yi-Chang Chang,Yen-Hsin Chen. Владелец: PixArt Imaging Inc. Дата публикации: 2017-08-22.

Organic light emitting device and manufacturing method thereof

Номер патента: US09692015B2. Автор: Jun-Hyuk Choi,Jang-Joo Kim,Jun-Ho Jeong,Ki-Don Kim,Jong-youp Shim,Dae-Geun Choi,Eung-Sug Lee,So-Hee Jeon,Jae-R. Youn. Владелец: Korea Institute of Machinery and Materials KIMM. Дата публикации: 2017-06-27.

Light emitting device, electrode structure and manufacturing method thereof

Номер патента: US09680123B2. Автор: Chun-Ting Liu,Hsi-Hsuan Yen,Chang-Ying Chen. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2017-06-13.

Light emitting diode module structure and manufacturing method thereof

Номер патента: US09559277B2. Автор: Wei-Chen Liang,Pin Chang. Владелец: Wisetop Technology Co Ltd. Дата публикации: 2017-01-31.

COA WOLED structure and manufacturing method thereof

Номер патента: US09496322B1. Автор: Qinghua Zou,Longqiang Shi. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-15.

Pixel structure of CMOS image sensor and manufacturing method thereof

Номер патента: US09305951B2. Автор: Xiaoxu KANG,Yuhang Zhao. Владелец: Shanghai IC R&D Center Co Ltd. Дата публикации: 2016-04-05.

Semiconductor device, semiconductor cascaded module structure, cascaded module structure and manufacturing methods thereof

Номер патента: CN104952858A. Автор: 胜又章夫,井上广司,泽地茂典,山方修武. Владелец: J Devices Corp. Дата публикации: 2015-09-30.

Semiconductor device with an improved lead-chip adhesion structure and lead frame to be used therefor

Номер патента: CA2240589C. Автор: Michihiko Ichinose. Владелец: NEC Corp. Дата публикации: 2002-02-05.

Three-dimensional bonding scheme and associated systems and methods

Номер патента: US20230069476A1. Автор: Chin Hui Chong,Hong Wan Ng,Seng Kim Ye,Kelvin Tan Aik Boo. Владелец: Micron Technology Inc. Дата публикации: 2023-03-02.

Semiconductor device

Номер патента: US20200365757A1. Автор: Meng-yang CHEN,Yuan-Ting Lin. Владелец: Epistar Corp. Дата публикации: 2020-11-19.

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Номер патента: US11374146B2. Автор: Meng-yang CHEN,Yuan-Ting Lin. Владелец: Epistar Corp. Дата публикации: 2022-06-28.

Memory system package structure and manufacturing method thereof

Номер патента: US20240178089A1. Автор: Peng Chen,Zhen Xu,XinRu Zeng,Weisong QIAN. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-30.

Semiconductor package structure and manufacturing method thereof

Номер патента: US20240057349A1. Автор: Ling-Yi Chuang,Kaimin Lv. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-02-15.

Semiconductor structure and manufacturing method thereof

Номер патента: US20220093605A1. Автор: RAN Li,Xing Jin,Ming Cheng. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-03-24.

Circuit structure and fabrication method thereof

Номер патента: US12133337B2. Автор: Yi Hung Lin,Li-Wei Sung. Владелец: Innolux Corp. Дата публикации: 2024-10-29.

Array substrate structure and manufacturing method thereof

Номер патента: US09785023B2. Автор: Xiaojiang Yu,Haibo DU. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-10-10.

OLED structure and manufacturing method thereof

Номер патента: US09490301B2. Автор: Zhigen Yi. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-08.

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Номер патента: US20240074206A1. Автор: Tzu-Yu Chen,Fu-Chen Chang,Kuo-Chi Tu,Sheng-Hung SHIH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Heat sink structure and manufacturing method thereof

Номер патента: US20140352150A1. Автор: Kuo-Sheng Lin,Sheng-Huang Lin. Владелец: Asia Vital Components Co Ltd. Дата публикации: 2014-12-04.

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Номер патента: US20230377644A1. Автор: XIAOGUANG WANG,Huihui Li,Dinggui Zeng,Jiefang DENG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-23.

Semiconductor structures and manufacturing methods thereof

Номер патента: US12107187B2. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-10-01.

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Номер патента: US09802280B2. Автор: Kuo-Sheng Lin,Sheng-Huang Lin. Владелец: Asia Vital Components Co Ltd. Дата публикации: 2017-10-31.

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Номер патента: US20220140265A1. Автор: Sasaki Mari,Takeya Junichi,WATANABE Shunichiro,MAKITA Tatsuyuki. Владелец: . Дата публикации: 2022-05-05.

Packaging structure and preparation method therefor, packaging module, and electronic device

Номер патента: EP4398295A1. Автор: Liang Tong,Guowen Liu,Shan ZHANG,Shihu SUN. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-07-10.

Capacitor, semiconductor device including the same, method of forming a capacitor and method of manufacturing a semiconductor device using the same

Номер патента: KR101902468B1. Автор: 전종률. Владелец: 삼성전자주식회사. Дата публикации: 2018-11-13.

Semiconductor device, having a through electrode semiconductor module employing thereof and method for manufacturing semiconductor device having a through electrode

Номер патента: US7436069B2. Автор: Satoshi Matsui. Владелец: NEC Electronics Corp. Дата публикации: 2008-10-14.

High brightness light emitting diode structure and the manufacturing method thereof

Номер патента: US20130240923A1. Автор: CHEN Ou,Chia-Liang Hsu,De-Shan Kuo,Chun-Hsiang Tu,Ting-Chia Ko,Po-Shun Chiu. Владелец: Epistar Corp. Дата публикации: 2013-09-19.

Semiconductor structure and a manufacturing method thereof

Номер патента: US09859254B1. Автор: Chen-Hua Yu,Ming-Fa Chen,Sung-Feng Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-02.

Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element

Номер патента: KR100595802B1. Автор: 아라이찌히로. Владелец: 소니 가부시끼 가이샤. Дата публикации: 2006-07-03.

Semiconductor device, semiconductor stacked module structure, stacked module structure and method of manufacturing same

Номер патента: KR102235811B1. Автор: 히로시 이노우에,아키오 가쓰마타,시게노리 사와치,오사무 야마가타. Владелец: 가부시키가이샤 앰코테크놀로지재팬. Дата публикации: 2021-04-02.

Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element

Номер патента: KR19990077941A. Автор: 아라이찌히로. Владелец: 이데이 노부유끼. Дата публикации: 1999-10-25.

Semiconductor device, semiconductor stacked module structure, stacked module structure and method of manufacturing same

Номер патента: TWI550792B. Автор: 山方修武,井上廣司,勝又章夫,澤地茂典. Владелец: 吉帝偉士股份有限公司. Дата публикации: 2016-09-21.

High brightness light emitting diode structure and the manufacturing method thereof

Номер патента: US20150349210A1. Автор: CHEN Ou,Chia-Liang Hsu,De-Shan Kuo,Chun-Hsiang Tu,Po-Shun Chiu,Chun-Teng Ko. Владелец: Epistar Corp. Дата публикации: 2015-12-03.

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Номер патента: US20150097185A1. Автор: BAE Byung Wook. Владелец: SK HYNIX INC.. Дата публикации: 2015-04-09.

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Номер патента: FR2380641B1. Автор: . Владелец: Texas Instruments Inc. Дата публикации: 1985-07-19.

Semiconductor device controllable electric characteristics of double patterned patterns and pattern control method thereof

Номер патента: KR100809717B1. Автор: 박준수,여기성,조한구,이지영,곽판석. Владелец: 삼성전자주식회사. Дата публикации: 2008-03-06.

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Номер патента: US11695027B2. Автор: Zhi Tian,Haoyu Chen,Zhen Gu,Qiwei Wang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2023-07-04.

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Номер патента: US11676987B2. Автор: Zhi Tian,Haoyu Chen,Zhen Gu,Qiwei Wang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2023-06-13.

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Номер патента: US20220246667A1. Автор: Zhi Tian,Haoyu Chen,Zhen Gu,Qiwei Wang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2022-08-04.

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Номер патента: US20210036045A1. Автор: Zhi Tian,Haoyu Chen,Zhen Gu,Qiwei Wang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2021-02-04.

Light emitting structure and a manufacturing method thereof

Номер патента: US09748456B2. Автор: Chia-Liang Hsu. Владелец: Epistar Corp. Дата публикации: 2017-08-29.

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Номер патента: US20160056159A1. Автор: Kim Jun-Kyum,Seo Jung-Woo,Kwon Sung-Un. Владелец: . Дата публикации: 2016-02-25.

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Номер патента: US20140199804A1. Автор: Tsai Shuang-Ji,Yaung Dun-Nian,Liu Jen-Cheng,Lin Jeng-Shyan,Wang Wen-De,Ho Cheng-Ying. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-07-17.

Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same

Номер патента: CN1822360A. Автор: 栗原和明,盐贺健司,约翰·D·巴尼基. Владелец: Fujitsu Ltd. Дата публикации: 2006-08-23.

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Номер патента: US20190067137A1. Автор: Zhou Wei,Tuttle Mark E.,Street Bret K.. Владелец: . Дата публикации: 2019-02-28.

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Номер патента: US20210183716A1. Автор: Zhou Wei,Tuttle Mark E.,Street Bret K.. Владелец: . Дата публикации: 2021-06-17.

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Номер патента: US20200168517A1. Автор: Zhou Wei,Tuttle Mark E.,Street Bret K.. Владелец: . Дата публикации: 2020-05-28.

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Номер патента: US10580710B2. Автор: Wei Zhou,Mark E. Tuttle,Bret K. Street. Владелец: Micron Technology Inc. Дата публикации: 2020-03-03.

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Номер патента: US20080157308A1. Автор: Tsing-Chow Wang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2008-07-03.

Cured body layer, printed wiring board, semiconductor device, resin sheet, method for manufacturing printed wiring board, and method for producing resin sheet

Номер патента: JP2019218451A. Автор: Yoshio Nishimura,嘉生 西村,大地 岡崎,Daichi Okazaki. Владелец: Ajinomoto Co Inc. Дата публикации: 2019-12-26.

Cured body layer printed wiring board semiconductor device resin sheet method for manufacturing printed wiring board and method for manufacturing resin sheet

Номер патента: TW202015920A. Автор: 西村嘉生,岡崎大地. Владелец: 日商味之素股份有限公司. Дата публикации: 2020-05-01.

Chip scale package structure and the fabrication method thereof

Номер патента: TW516199B. Автор: Shih-Hsiung Lin,Hsing-Seng Wang. Владелец: Ind Tech Res Inst. Дата публикации: 2003-01-01.

Flip-chip package bonding structure and the manufacturing method thereof

Номер патента: TW200428611A. Автор: Yuan-Chang Huang. Владелец: Ind Tech Res Inst. Дата публикации: 2004-12-16.

Image sensor structure and the manufacturing method thereof

Номер патента: TW448577B. Автор: Fumihiko Matsuno. Владелец: Nippon Electric Co. Дата публикации: 2001-08-01.

Wafer with bump structure and the forming method thereof

Номер патента: TW200933853A. Автор: Cheng-Tang Huang. Владелец: Chipmos Technologies Bermuda. Дата публикации: 2009-08-01.

Chip packaging structure and the packaging method thereof

Номер патента: TWI250626B. Автор: Wen-Feng Jeng. Владелец: Boardtek Electronics Corp. Дата публикации: 2006-03-01.

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Номер патента: TW200642049A. Автор: wen-feng Zheng. Владелец: Boardtek Electronics Corp. Дата публикации: 2006-12-01.

Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof

Номер патента: US20130126883A1. Автор: Yamazaki Shunpei,Takayama Toru,Sato Keiji. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2013-05-23.

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Номер патента: US20160013131A1. Автор: Kim Hyun-Chul,Choi Yong-gyu,Ko Seung-hee. Владелец: . Дата публикации: 2016-01-14.

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Номер патента: US20150035159A1. Автор: Chiou Wen-Chih,WU Tsang-Jiuh,Chen Hsin-Yu,YANG Ku-Feng,LIN Yung-Chi,Chung Ming-Tsu,Lo HsiaoYun,Shih Hong-Ye,Chen Chia-Yin. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2015-02-05.

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Номер патента: US20190051623A1. Автор: Hacker Jonathan S.,Tiwari Chandra S.,Gambee Christopher J.,Das Mayukhee. Владелец: . Дата публикации: 2019-02-14.

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Номер патента: US20150061154A1. Автор: Kim Hyun-Chul,Choi Yong-gyu,Ko Seung-hee. Владелец: . Дата публикации: 2015-03-05.

SEMICONDUCTOR DEVICE WITH ADVANCED PAD STRUCTURE RESISTANT TO PLASMA DAMAGE AND METHOD FOR FORMING THE SAME

Номер патента: US20150179565A1. Автор: WANG HUNG-CHIH,LIANG YAO-HSIANG. Владелец: . Дата публикации: 2015-06-25.

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Номер патента: US20190189576A1. Автор: Hacker Jonathan S.,Tiwari Chandra S.,Gambee Christopher J.,Das Mayukhee. Владелец: . Дата публикации: 2019-06-20.

Semiconductor device for isolating a photodiode to reduce junction leakage and method of formation

Номер патента: US20030038336A1. Автор: Richard Mann. Владелец: Pictos Technologies Inc. Дата публикации: 2003-02-27.

Semiconductor device for isolating a photodiode to reduce junction leakage and method of formation

Номер патента: US7112466B2. Автор: Richard A. Mann. Владелец: ESS Technology Inc. Дата публикации: 2006-09-26.

Semiconductor device consisting of a photodiode and a bipolar element, and method of manufacturing

Номер патента: DE69637636D1. Автор: Chihiro Arai. Владелец: Sony Corp. Дата публикации: 2008-09-25.

Semiconductor device having storage node electrode with protection film thereon and method of fabricating the same

Номер патента: US7807542B2. Автор: Jin-Sung Kim,Kyung-Woo Lee,Sang-Jun Park,Yeong-Cheol Lee,Hye-Sun Kim,Joo-Byoung Yoon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-10-05.

Passivating contact structure and preparation method thereof, solar cell and preparation method thereof

Номер патента: EP4287270A2. Автор: HONG Chen,Shuai ZHANG,Xiaopeng Wu,Chengfa Liu,Yugang Lu,Yaqian Zhang. Владелец: Trina Solar Co Ltd. Дата публикации: 2023-12-06.

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Номер патента: US20240055539A1. Автор: HONG Chen,Shuai ZHANG,Xiaopeng Wu,Chengfa Liu,Yugang Lu,Yaqian Zhang. Владелец: Trina Solar Co Ltd. Дата публикации: 2024-02-15.

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Номер патента: EP4287270A3. Автор: HONG Chen,Shuai ZHANG,Xiaopeng Wu,Chengfa Liu,Yugang Lu,Yaqian Zhang. Владелец: Trina Solar Co Ltd. Дата публикации: 2024-04-17.

Passivating contact structure and preparation method thereof, solar cell and preparation method thereof

Номер патента: AU2023222900B1. Автор: HONG Chen,Shuai ZHANG,Xiaopeng Wu,Chengfa Liu,Yugang Lu,Yaqian Zhang. Владелец: Trina Solar Co Ltd. Дата публикации: 2024-02-01.

Pixel structure and manufacturing method thereof, array substrate and display device

Номер патента: US20210333658A1. Автор: HUI Li,Chunping Long. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-10-28.

Semiconductor device package structure having a back side protective scheme and method of the same

Номер патента: TW200908245A. Автор: Wen-Kun Yang,Hsien-Wen Hsu. Владелец: Advanced Chip Eng Tech Inc. Дата публикации: 2009-02-16.

Circuit board surface structure and fabrication method thereof

Номер патента: US8164003B2. Автор: Ying-Tung Wang,Sao-Hsia Tang. Владелец: Unimicron Technology Corp. Дата публикации: 2012-04-24.

Semiconductor device with an improved lead-chip adhesion structure and lead frame to be used therefor

Номер патента: CA2240589A1. Автор: Michihiko Ichinose. Владелец: NEC Corp. Дата публикации: 1998-12-12.

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Номер патента: EP4199088A1. Автор: Feng Wu,Sang Yeol Park. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-06-21.

Solar cell structure and manufacturing method thereof

Номер патента: EP2251909A3. Автор: Yen-Chun Chen. Владелец: Axuntek Solar Energy Co Ltd. Дата публикации: 2012-04-04.

Electronic packaging structure and a manufacturing method thereof

Номер патента: US20100052143A1. Автор: Chung-er Huang,Ming-Tai Kuo. Владелец: Individual. Дата публикации: 2010-03-04.

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Номер патента: EP4181187A1. Автор: Ling-Yi Chuang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-05-17.

Pixel structure and manufacturing method therefor, and array substrate and display device

Номер патента: EP3745191A1. Автор: HUI Li,Chunping Long. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-12-02.

Antenna packaging structure and manufacturing method thereof

Номер патента: US20230335882A1. Автор: Chen Xu,Yaojian Lin,Shuo Liu,Chenye He. Владелец: JCET Group Co Ltd. Дата публикации: 2023-10-19.

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Номер патента: US20230260940A1. Автор: Ku-Feng Yang,Wen-Chih Chiou,Tsang-Jiuh Wu,Chen-Yu Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

Capacitor structure and manufacturing method thereof

Номер патента: US11862666B2. Автор: Yu-Cheng Tung,Chia-Wei Wu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-01-02.

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Номер патента: US20230422465A1. Автор: Deyuan Xiao,GuangSu SHAO,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-28.

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Номер патента: US11862223B2. Автор: Shuliang NING. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-02.

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Номер патента: US20230397399A1. Автор: Xiaojie Li,Daohuan FENG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-07.

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Номер патента: US20230389298A1. Автор: Deyuan Xiao,Youming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-30.

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Номер патента: US20230389281A1. Автор: Yi Jiang,Deyuan Xiao,GuangSu SHAO,Youming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-30.

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Номер патента: US20230345698A1. Автор: Deyuan Xiao,Semyeong Jang,Minki HONG,Joonsuk Moon,Jo-Lan CHIN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-26.

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Номер патента: US20190097173A1. Автор: Wenbin JIA. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2019-03-28.

Three-dimensional stacked package structure with micro-channel heat dissipation structure and packaging method thereof

Номер патента: US11776879B1. Автор: Ruyun Zhang,Shunbin Li,Weihao Wang,Guandong Liu. Владелец: Zhejiang Lab. Дата публикации: 2023-10-03.

Pixel structure and manufacturing method thereof, display panel and display device

Номер патента: US9746734B2. Автор: Lei Chen,Zhilong PENG,Wukun Dai,Huanping LIU. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-08-29.

Pixel structure and manufacturing method thereof, display panel and display device

Номер патента: US20160085124A1. Автор: Lei Chen,Zhilong PENG,Wukun Dai,Huanping LIU. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2016-03-24.

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Номер патента: US11984417B2. Автор: Ling-Yi Chuang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-05-14.

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Номер патента: US20230073527A1. Автор: Chien-Yuan Wang,Chien-Chen Lee. Владелец: Tong Hsing Electronic Industries Ltd. Дата публикации: 2023-03-09.

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Номер патента: US20220005983A1. Автор: Chih-Chou Chou,Wei-Chia Huang,Zhiyi Liang. Владелец: Wistron Corp. Дата публикации: 2022-01-06.

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Номер патента: US20160343788A1. Автор: Qinghua Zou,Longqiang Shi. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-24.

Three-dimensional semiconductor structure and formation method thereof

Номер патента: US20230403840A1. Автор: Yi Jiang,Deyuan Xiao,GuangSu SHAO,Youming Liu,Weiping BAI,Xingsong SU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-14.

Semiconductor package and manufacturing method thereof

Номер патента: US20240063160A1. Автор: Chen-Hua Yu,Chuei-Tang Wang,Chung-Hao Tsai,Chih-Hsin Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-22.

Semiconductor structure and manufacturing method thereof

Номер патента: US20230320079A1. Автор: Deyuan Xiao,GuangSu SHAO,Yunsong QIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-05.

Semiconductor structure and forming method thereof

Номер патента: US11980020B2. Автор: Yong Lu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-05-07.

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Номер патента: US20230292493A1. Автор: Zhicheng Shi,Yong Lu,Ming-Hung Hsieh,Renhu LI. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-14.

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Номер патента: US20230403842A1. Автор: Yi Tang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-14.

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Номер патента: US20220262556A1. Автор: Tong Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-08-18.

Image sensor structure and manufacturing method thereof

Номер патента: US20210143194A1. Автор: Xiaoxu KANG. Владелец: Shanghai IC R&D Center Co Ltd. Дата публикации: 2021-05-13.

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Номер патента: US20230301066A1. Автор: Xinran Liu,Gongyi WU,Longyang Chen,Yachao Xu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-21.

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Номер патента: US20230005866A1. Автор: Ling-Yi Chuang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-01-05.

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Номер патента: US20210336191A1. Автор: Longqiang Shi. Владелец: Individual. Дата публикации: 2021-10-28.

Stretchable substrate structure and the manufacturing method thereof, stretchable display and the manufacturing method thereof, and operating method of stretchable display

Номер патента: US20200119294A1. Автор: Sang Il Kim,Ho Won YOON,Min Hyun JUNG,Mun Pyo Hong,Dong Hyeok Lee. Владелец: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION. Дата публикации: 2020-04-16.

Sensor chip package structure and manufacturing method thereof

Номер патента: US20170062628A1. Автор: Chi-Chih Shen,Yi-Chang Chang,Yen-Hsin Chen. Владелец: PixArt Imaging Inc. Дата публикации: 2017-03-02.

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Номер патента: US20230345694A1. Автор: Deyuan Xiao,Semyeong Jang,Minki HONG,Joonsuk Moon,Jo-Lan CHIN,Kyongtaek LEE. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-26.

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Номер патента: US20230389278A1. Автор: Deyuan Xiao,Youming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-30.

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Номер патента: US20210036297A1. Автор: Kyung Min Kim. Владелец: LG Chem Ltd. Дата публикации: 2021-02-04.

Electrical wire-connecting structure and method for manufacturing electrical wire-connecting structure

Номер патента: US09793617B2. Автор: Yukihiro Kawamura,Takashi TONOIKE. Владелец: Furukawa Automotive Systems Inc. Дата публикации: 2017-10-17.

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Номер патента: US20220029238A1. Автор: Ji Hoon Lim. Владелец: SK Innovation Co Ltd. Дата публикации: 2022-01-27.

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Номер патента: US20170262067A1. Автор: Tsu-Hui Yu,Shu-An Huang. Владелец: Primax Electronics Ltd. Дата публикации: 2017-09-14.

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Номер патента: SE2330173A1. Автор: Hang Liu,Shiya HE. Владелец: Ningbo Zhenyu Tech Co Ltd. Дата публикации: 2024-04-18.

Wireless charging cable, coil structure and producing method thereof, and wireless charging device

Номер патента: US20240242882A1. Автор: Yu-Pei Huang,Chih-Yung Wu,Kuan-Ying Ho,Yao-Nien Chung. Владелец: Luxshare Precision Industry Co Ltd. Дата публикации: 2024-07-18.

Water-proof Computer Keyboard with Computer Arch Structure and Using Method Thereof

Номер патента: AU2020103619A4. Автор: Lianhui ZHOU. Владелец: Individual. Дата публикации: 2021-02-04.

Switch seat body structure and manufacturing method thereof

Номер патента: US09870877B2. Автор: Chih-Yuan Wu,Chih-Hao Sung,Chen-Yun Hsieh. Владелец: Switchlab Inc. Дата публикации: 2018-01-16.

Three-dimensional cavity surface emitting laser structure and fabrication method thereof

Номер патента: US5895224A. Автор: Hye-Yong Chu,Hyo-Hoon Park,Byueng-Su Yoo. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 1999-04-20.

Via hole structure and manufacturing method thereof

Номер патента: US20080211107A1. Автор: Guo-Cheng Liao. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2008-09-04.

Resistor layout structure and manufacturing method thereof

Номер патента: US20080258862A1. Автор: Wei-Ting Chen,Chang-Lin Wei,Chang-Sheng Chen,Chin-Sun Shyu. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2008-10-23.

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Номер патента: US20220197415A1. Автор: Chung-Chin Hsiao,Wei-Chia Fang,Chun-Hung Chu,Ya-Ting Lin,Shih-Ching Chen,Yeh-Sheng Wang. Владелец: Cambrios Film Solutions Corp. Дата публикации: 2022-06-23.

Copper foil structure and manufacturing method thereof

Номер патента: US20240177884A1. Автор: Te-Chao Liao,Wei-Sheng Cheng,Chao-Tung Wu. Владелец: Nan Ya Plastics Corp. Дата публикации: 2024-05-30.

Connection line structure and forming method thereof

Номер патента: US20240351859A1. Автор: Li Huang,Cheng Huang,Yaqin Wang,Zhanfeng Ma,Chunshui WANG,Jianfei GAO. Владелец: Wuhan Neuracom Technology Development Co Ltd. Дата публикации: 2024-10-24.

Connection line structure and forming method therefor

Номер патента: EP4443445A1. Автор: Li Huang,Cheng Huang,Yaqin Wang,Zhanfeng Ma,Chunshui WANG,Jianfei GAO. Владелец: Wuhan Neuracom Technology Development Co Ltd. Дата публикации: 2024-10-09.

Solid electrolyte single crystal having perovskite structure and method for producing the same

Номер патента: US20150244021A1. Автор: Keigo Hoshikawa,Yasuyuki Fujiwara. Владелец: Shinshu University NUC. Дата публикации: 2015-08-27.

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Номер патента: US20230352762A1. Автор: Kyu Hyun Choi,Jin Hak Kong,Jae Hyuk KANG. Владелец: LG Energy Solution Ltd. Дата публикации: 2023-11-02.

Cylindrical secondary battery to which laser welding is applied and fabricating method thereof, battery pack and vehicle including the same

Номер патента: CA3234294A1. Автор: Min-Woo Kim,Do-Gyun Kim. Владелец: LG Energy Solution Ltd. Дата публикации: 2023-04-20.

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Номер патента: US20240315011A1. Автор: Yu-Ting Lin,Chiang-Lin Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-19.

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Номер патента: US20240315012A1. Автор: Yu-Ting Lin,Chiang-Lin Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-09-19.

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Номер патента: US20240314918A1. Автор: Hsien-Chang Chen,Ting-Jui Wang. Владелец: Fivetech Technology Inc. Дата публикации: 2024-09-19.

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Номер патента: US11856876B2. Автор: Cheng-Chun Chang,Shao-Ming Yu,Tung-Ying Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

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Номер патента: US20240045157A1. Автор: Vincent Wai HUNG,Hau Chen Loke,Wing Keung Mark Mak,Yvonne Xiaoming Yu,Paladin Li Peng Cai. Владелец: Cloud Light Technology Ltd. Дата публикации: 2024-02-08.

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Номер патента: US11839075B2. Автор: Yao-Ting Tsai,Chih-Jung Ni,Chuan-Chi CHOU. Владелец: Winbond Electronics Corp. Дата публикации: 2023-12-05.

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Номер патента: US20240365677A1. Автор: Rai-Min Huang,Jia-Rong Wu,Yi-An Shih,I-Fan Chang,Hsiu-Hao Hu,Po Kai Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-31.

Semiconductor structure and preparation method therefor

Номер патента: EP4270446A1. Автор: designation of the inventor has not yet been filed The. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-01.

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Номер патента: US20240164099A1. Автор: Hong-Ji Lee,Tzung-Ting Han,Chang-Wen Jian. Владелец: Macronix International Co Ltd. Дата публикации: 2024-05-16.

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Номер патента: US20230026176A1. Автор: Yu-Fu Kuo,Jing-Jing Gong. Владелец: WISTRON NEWEB CORP. Дата публикации: 2023-01-26.

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Номер патента: US11917830B2. Автор: Min Liao,Qijun Yang,Yichun ZHOU,Yanwei HUAN,Siwei DAI,Zhaotong LIU. Владелец: XIANGTAN UNIVERSITY. Дата публикации: 2024-02-27.

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Номер патента: US20240251504A1. Автор: Kai-Ming Yang,Cheng-Ta Ko,Pu-Ju Lin,Chin-Sheng Wang,Chen-Hao LIN. Владелец: Unimicron Technology Corp. Дата публикации: 2024-07-25.

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Номер патента: US20240275352A1. Автор: Mengyuan Wang. Владелец: Fujian Sunwise Semiconductor Technology Co Ltd. Дата публикации: 2024-08-15.

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Номер патента: US11602090B2. Автор: Yu-Fu Kuo,Jing-Jing Gong. Владелец: WISTRON NEWEB CORP. Дата публикации: 2023-03-07.

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Номер патента: US12069850B2. Автор: Chih-Cheng Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-08-20.

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Номер патента: US12096619B2. Автор: Deyuan Xiao,Youming Liu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-17.

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Номер патента: US12101943B2. Автор: WEI CHANG,Qingsong DU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-24.

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Номер патента: US12095245B2. Автор: Jing Zhao,Shijie Wang,Junfei Zhang,Xianwei Zhang,Qingyu Zhang,Jianzheng CUI. Владелец: Liaoning Wuhuan Special Materials And Intelligent Equipment Industry Technology Research Institute Co ltd. Дата публикации: 2024-09-17.

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Номер патента: US12075705B2. Автор: Wen Bin XIA. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-08-27.

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Номер патента: US12069859B2. Автор: Xing Jin. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-08-20.

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Номер патента: US09752665B2. Автор: Yi-Jeng Tsai,Chau-Shin Jang,Han-Ping Yang,Jih-Yang Chang,Hsin-Tien Yeh,Cheng-Hsuan Lin. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2017-09-05.

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Номер патента: US09630837B1. Автор: Chia-Hua Chu,Chun-Wen Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

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Номер патента: US20230165171A1. Автор: Hao Tong,Weiguo Wang,Lun Wang,Xiangshui Miao. Владелец: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY. Дата публикации: 2023-05-25.

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Номер патента: US12096616B2. Автор: RAN Li,Xing Jin,Ming Cheng. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-17.

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Номер патента: US20240357748A1. Автор: Cheng-Ta Ko,Pu-Ju Lin,Chi-Hai Kuo,Jeng-Ting LI. Владелец: Unimicron Technology Corp. Дата публикации: 2024-10-24.

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Номер патента: US12048179B2. Автор: Li Liu,Pengcheng LU,Shengji Yang,Kui Zhang,Chao PU,Rongrong SHI. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-07-23.

Electric motor having rotor structure for avoiding defect due to strain generated by temperature change, and production method thereof

Номер патента: US09356480B2. Автор: Akira Yamaguchi,Tsuyoshi Furuya. Владелец: FANUC Corp. Дата публикации: 2016-05-31.

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Номер патента: US12046280B2. Автор: XIAOGUANG WANG,Huihui Li,Dinggui Zeng,Jiefang DENG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-07-23.

Electrical leading-out structure and preparation method therefor, and airtight apparatus and optical communication device

Номер патента: EP4361691A1. Автор: Jun Luo,Xiaokang XIAO,Zengguang GUO. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-05-01.

Camera structure and assembly method therefor

Номер патента: EP4404577A1. Автор: Bingkai FU. Владелец: Shanghai Yuxing Electronics Technology Co Ltd. Дата публикации: 2024-07-24.

Perovskite cell having hole transport layer of comb-like fiber structure and preparation method for perovskite cell

Номер патента: EP4425530A1. Автор: Chen Xu,Tong Liu,ZHAO Wu,Zifeng Li,Junjie Xie,Yifan DIAO,Zhuxing SUN. Владелец: Longi Green Energy Technology Co Ltd. Дата публикации: 2024-09-04.

Heat conduction structure and preparation method therefor, radiator and electronic device having same

Номер патента: EP4429423A1. Автор: Wenwen YUAN,Mingbo Shi. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-09-11.

Circuit structure and power-on method thereof

Номер патента: US20200295753A1. Автор: Chien-Cheng Liu,Yun-Chih Chang,Shu-Yi Kao,Yun-Ru Wu. Владелец: Realtek Semiconductor Corp. Дата публикации: 2020-09-17.

Circuit structure and power-on method thereof

Номер патента: US10778214B1. Автор: Chien-Cheng Liu,Yun-Chih Chang,Shu-Yi Kao,Yun-Ru Wu. Владелец: Realtek Semiconductor Corp. Дата публикации: 2020-09-15.

Flash memory device having multi-stack structure and channel separation method thereof

Номер патента: US12119066B2. Автор: Ho-Jun Lee,Yohan Lee,Hyebin KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-10-15.

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Номер патента: US20190257870A1. Автор: Shimada Yuji. Владелец: . Дата публикации: 2019-08-22.

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Номер патента: US20190116052A1. Автор: Noh Mijung,KIM Yongsoo,AHN KYOUNGMOON,Lee Yong Ki,KARPINSKYY Bohdan,CHOI Yunhyeok. Владелец: . Дата публикации: 2019-04-18.

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Номер патента: US20160337322A1. Автор: Kim Dae Hwan,KANG Myung Koo,JUNG Jae Woo,CHUNG Hyun Woo,KANG BO GYEONG,SO BYUNG SE,JIN SANG HWA. Владелец: . Дата публикации: 2016-11-17.

Semiconductor device with reduced thickness, electronic products employing the same, and method of fabricating the same

Номер патента: KR101442176B1. Автор: 김용일,김대익. Владелец: 삼성전자주식회사. Дата публикации: 2014-09-24.

Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same

Номер патента: US20050194597A1. Автор: Sang-Hyun Lee,Du-Heon Song,Hyeoung-Won Seo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-09-08.

Semiconductor device having a functional film, a thin film transistor and method of forming same

Номер патента: TW201131784A. Автор: Osamu Goto,Hidenobu Kakimoto,Kei Sakanoue,Masashi Ogawa,Seiji Shinkai,Shuichi Haraguchi,Shuhei Nakatani,Tomohiro Shiraki. Владелец: Inst Of Systems Information Technologies And Nanotechnologies. Дата публикации: 2011-09-16.

Dualduplexer having matrix structure and method for forming the same

Номер патента: WO2005008918A1. Автор: Sang-Jun Kim,Young-Sang Yoon,Tae-Won Seo,Jae-Bum Noh,Young-Seob Yoo. Владелец: Ace Technology. Дата публикации: 2005-01-27.

Dualduplexer having matrix structure and method for forming the same

Номер патента: EP1647102A1. Автор: Sang-Jun Kim,Young-Sang Yoon,Tae-Won Seo,Jae-Bum Noh,Young-Seob Yoo. Владелец: Ace Technology Co Ltd. Дата публикации: 2006-04-19.

Dualduplexer having matrix structure and method for forming the same

Номер патента: US20070115863A1. Автор: Sang-Jun Kim,Young-Sang Yoon,Tae-Won Seo,Jae-Bum Noh,Young-Seob Yoo. Владелец: KTFreetel Co Ltd. Дата публикации: 2007-05-24.

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Номер патента: US11921960B2. Автор: FAN He,Xiaoqing SHU,Xiangdan Dong,Yunsheng Xiao,Zhengwei LUO,Jiping Zhao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-03-05.

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Номер патента: US11656727B2. Автор: FAN He,Xiaoqing SHU,Xiangdan Dong,Yunsheng Xiao,Zhengwei LUO,Jiping Zhao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2023-05-23.

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Номер патента: US20230324959A1. Автор: Jian Jin,Chuanfu Xiao. Владелец: Shanghai Tianma Microelectronics Co Ltd. Дата публикации: 2023-10-12.

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Номер патента: US20230389264A1. Автор: Yang Chen,Shiran ZHANG,Xinru HAN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-11-30.

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Номер патента: US20230413578A1. Автор: WEI CHANG,XIAOGUANG WANG,Huihui Li,Jiefang DENG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-21.

Electrical lead-out structure and preparation method thereof, hermetic apparatus, and optical communication device

Номер патента: US20240164040A1. Автор: Jun Luo,Xiaokang XIAO,Zengguang GUO. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-05-16.

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Номер патента: US20230221823A1. Автор: FAN He,Xiaoqing SHU,Xiangdan Dong,Yunsheng Xiao,Zhengwei LUO,Jiping Zhao. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2023-07-13.

Semiconductor having cross coupled structure and layout verification method thereof

Номер патента: US09767248B2. Автор: Jung-Ho Do,Changho HAN,Taejoong Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

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Номер патента: US20160085904A1. Автор: Jung-Ho Do,Changho HAN,Taejoong Song. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-03-24.

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Номер патента: US20050047704A1. Автор: Fumio Ohtake. Владелец: Sumitomo Electric Device Innovations Inc. Дата публикации: 2005-03-03.

Laminated structure, a touch display having a laminated structure, and a laminating method thereof

Номер патента: US09684397B2. Автор: Wei Wang,Jia WU,Yau-Chen Jiang,Pingping Huang. Владелец: TPK Touch Solutions Xiamen Inc. Дата публикации: 2017-06-20.

Instant dissolving device by mass transfer and stretching with a cleaning structure and a dissolving method thereof

Номер патента: US11865500B2. Автор: Xiao Shu,Yong Qi,Yalan Yang,Zheng Shu,Zhongbin Ye,Leiting Shi,Hongqiao LIU. Владелец: Chengdu Technological University CDTU. Дата публикации: 2024-01-09.

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Номер патента: US11819381B2. Автор: Jian Wang,Xiaohui Wang,Liyuan SHENG. Владелец: Individual. Дата публикации: 2023-11-21.

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Номер патента: US20230240811A1. Автор: Jian Wang,Xiaohui Wang,Liyuan SHENG. Владелец: Individual. Дата публикации: 2023-08-03.

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Номер патента: US20230330606A1. Автор: Xiao Shu,Yong Qi,Yalan Yang,Zheng Shu,Zhongbin Ye,Leiting Shi,Hongqiao LIU. Владелец: Chengdu Technological University CDTU. Дата публикации: 2023-10-19.

Quantum dot composite structure and a forming method thereof

Номер патента: US20240124350A1. Автор: Tzong-Liang Tsai,Ru-Shi Liu,Wen-Tse Huang,Hung-Chun TONG,Yu-Chun Lee,Ching Liu,Pei Cong YAN,Chai-Chun HSIEH. Владелец: Lextar Electronics Corp. Дата публикации: 2024-04-18.

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Номер патента: US20200023469A1. Автор: Xiaohui Han,Yonggang Liu,Yanqiang ZHAO,Longxi LIU,Chuanqi Tao,Xifeng FANG,Ruiquan GAO. Владелец: CRRC Qingdao Sifang Co Ltd. Дата публикации: 2020-01-23.

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Номер патента: US20230193934A1. Автор: Ting-Jui Wang. Владелец: DTech Precision Industries Co Ltd. Дата публикации: 2023-06-22.

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Номер патента: US20200133635A1. Автор: Ming-Hsiu Lee,Chao-Hung Wang. Владелец: Macronix International Co Ltd. Дата публикации: 2020-04-30.

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Номер патента: US09499409B2. Автор: DONG Fan,Yue Yang,Ying Zhang,Zhongmin Liu,Peng Tian,Xiong SU. Владелец: Dalian Institute of Chemical Physics of CAS. Дата публикации: 2016-11-22.

Ink jet head structure and adhering method thereof

Номер патента: US20080024564A1. Автор: Chia-Tai Chen. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2008-01-31.

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Номер патента: EP4424352A2. Автор: designation of the inventor has not yet been filed The. Владелец: Xcath Inc. Дата публикации: 2024-09-04.

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Номер патента: EP4451023A1. Автор: Yunpeng Zhu,Dadi Setiadi,Zhan SU,Huaiyu MENG,Yichen SHEN,Jianhua Wu,Yelong Xu,Yanfei BAI,Jinghui ZOU. Владелец: Shanghai Xizhi Technology Co ltd. Дата публикации: 2024-10-23.

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Номер патента: US20240102834A1. Автор: Lingyun Zhang,Jinliang Hou,Fenghua Wu,Jiudong YANG,Muyao SHI,Liwen YIN,Gui'e TIAN,Lipeng GONG. Владелец: North China University of Science and Technology. Дата публикации: 2024-03-28.

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Номер патента: US20160047501A1. Автор: Hiroshi Kawahara,Sumio Sugita. Владелец: NSK LTD. Дата публикации: 2016-02-18.

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Номер патента: US20220002465A1. Автор: Chunyang Zheng,Shanshan Qian,Haidong Jiang,Chunman Huang,Yangcheng HU,Jiezhong Gan. Владелец: Jiangsu China Railway ARIT New Materials Co Ltd. Дата публикации: 2022-01-06.

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Номер патента: US20240264348A1. Автор: Mu Wang,Yun Lai,Hongchen CHU,Xiang Xiong,Ruwen PENG. Владелец: Nanjing Star Hidden Technology Development Co Ltd. Дата публикации: 2024-08-08.

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Номер патента: US09464435B2. Автор: Chuan Hul Ku,Wen Hao Ku. Владелец: Evergrow International Trading (Shanghai) Co Ltd. Дата публикации: 2016-10-11.

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Номер патента: US20210298504A1. Автор: Zhiyong KANG. Владелец: Linhai Yongxin Anying Outdoor Products Co Ltd. Дата публикации: 2021-09-30.

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Номер патента: US20220114971A1. Автор: Jinxiang Chen. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2022-04-14.

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Номер патента: US12017219B2. Автор: Lei Wang,Xue Dong,Xiaochuan Chen,Haisheng Wang,Yingming Liu,Pinchao GU,Changfeng LI,Xiaoliang DING. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-06-25.

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Номер патента: US20240226667A1. Автор: Chih-Yi Lin,Kuo-Kuang Cheng,Chi-Chin Chiang,Wen-Hsin Tai. Владелец: San Fang Chemical Industry Co Ltd. Дата публикации: 2024-07-11.

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Номер патента: EP4414172A2. Автор: Chih-Yi Lin,Kuo-Kuang Cheng,Chi-Chin Chiang,Wen-Hsin Tai. Владелец: San Fang Chemical Industry Co Ltd. Дата публикации: 2024-08-14.

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Номер патента: US8944341B2. Автор: Jin-Jong Su,Byung-Jun Park,Fang-Yu Liu. Владелец: Global Material Science Co Ltd. Дата публикации: 2015-02-03.

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Номер патента: US9547185B2. Автор: Qin Chen,Shichao SONG. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2017-01-17.

Waterproof computer keyboard with computer arch structure and using method thereof

Номер патента: CA3024026A1. Автор: . Владелец: Individual. Дата публикации: 2020-03-10.

[pixel structure and fabricating method thereof]

Номер патента: US20050036079A1. Автор: Daisuke Nishino,Chih-Hung Chiang. Владелец: Individual. Дата публикации: 2005-02-17.

Pixel structure and fabricating method thereof

Номер патента: US20060033101A1. Автор: Daisuke Nishino,Chih-Hung Chiang. Владелец: Individual. Дата публикации: 2006-02-16.

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Номер патента: US20230364866A1. Автор: Yifan ZHANG,Zhixiang Li,Jianjun Guo,Gaojie Xu. Владелец: Ningbo Institute of Material Technology and Engineering of CAS. Дата публикации: 2023-11-16.

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Номер патента: US20240298835A1. Автор: Ke Wang. Владелец: Zhejiang Bahe Kitchenware Co Ltd. Дата публикации: 2024-09-12.

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Номер патента: US20240308441A1. Автор: FAN YANG,Pengfei Li,Jinfeng Zhao,Zhengmiao Guo. Владелец: TONGJI UNIVERSITY. Дата публикации: 2024-09-19.

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Номер патента: US20240360603A1. Автор: YANG LU,Shilian LI. Владелец: Elastique Seamless Pte Ltd. Дата публикации: 2024-10-31.

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Номер патента: US09995013B2. Автор: Gangping ZHANG,Dengyin WANG. Владелец: PowerChina Huadong Engineering Corp Ltd. Дата публикации: 2018-06-12.

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Номер патента: US20240293813A1. Автор: Lei Wang,Xue Dong,Xiaochuan Chen,Haisheng Wang,Yingming Liu,Pinchao GU,Changfeng LI,Xiaoliang DING. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-09-05.

Touch electrode and fabricating method thereof, capacitive touch device and touch dislay device

Номер патента: US09684401B2. Автор: Jing Wang,Yun Qiu,Youqiang Lu. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-06-20.

Liquid crystal display pixel structure and manufacture method thereof

Номер патента: US09632368B2. Автор: Feng Zhao,Chungyi CHIU. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-04-25.

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Номер патента: US20240375390A1. Автор: Huiyu LI,Xiaoxu Li,Fuzhen Sun,quanda Zhang,Jirigele Yun. Владелец: Beijing National Innovation Institute Of Lightweight Ltd Yantai Branch. Дата публикации: 2024-11-14.

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Номер патента: US09547185B2. Автор: Qin Chen,Shichao SONG. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2017-01-17.

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Номер патента: US09510992B2. Автор: Li-Chen Fu,Cheng-Hsien Lin,Chia-Ming Wang,Chung-Dial Lim,Shih-Huang Tseng. Владелец: National Taiwan University NTU. Дата публикации: 2016-12-06.

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Номер патента: US20210174173A1. Автор: HE Qian,Xinyi Li,Bin Gao,Huaqiang Wu,Sen Song,Qingtian Zhang. Владелец: TSINGHUA UNIVERSITY. Дата публикации: 2021-06-10.

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Номер патента: US20230175122A1. Автор: Jihoon Kim,Jungwon Park. Владелец: INSTITUTE FOR BASIC SCIENCE. Дата публикации: 2023-06-08.

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Номер патента: US20150353702A1. Автор: Ömer Suat Taşkin,Baris Kiskan,Yusuf Yagci,Abdullah AKSU,Nuray BALKIS. Владелец: Istanbul Teknik Universitesi ITU. Дата публикации: 2015-12-10.

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Номер патента: US20240167142A1. Автор: Jie Shen,XU Wang,DAN Guo,Jianming Liu,Yueguang Yu,Xiaoliang Lu,Weiao Hou,Zhaoran Zheng,Kaiping Du. Владелец: Bgrimm Technology Group Ltd. Дата публикации: 2024-05-23.

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Номер патента: US20060258844A1. Автор: Jiunn-Ming Jeng,Chih-Yi Lu,Wen-Jen Yang. Владелец: Zen U Biotechnology Co Ltd. Дата публикации: 2006-11-16.

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Номер патента: US20110111128A1. Автор: Jin-Jong Su,Byung-Jun Park,Fang-Yu Liu. Владелец: Global Material Science Co Ltd. Дата публикации: 2011-05-12.

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Номер патента: US20130087748A1. Автор: Seong-Ho Choi,Jong-Bum Kim,Sung-Hee Jung,Jinho Moon,Jin-Hyuck Jung. Владелец: Korea Atomic Energy Research Institute KAERI. Дата публикации: 2013-04-11.

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Номер патента: US09922587B2. Автор: Xue Dong,Peng Liu,Renwei Guo,Chungchun CHEN. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-03-20.

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Номер патента: US09563015B1. Автор: Wei Lin,Chung-Yi Lin,Yi-Jen Chiu,Yi-Jhe CHEN. Владелец: National Sun Yat Sen University. Дата публикации: 2017-02-07.

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Номер патента: US09463840B1. Автор: Bill Wu. Владелец: Individual. Дата публикации: 2016-10-11.

Column filling material and a production method thereof

Номер патента: US09394419B2. Автор: Ömer Suat Taşkin,Baris Kiskan,Yusuf Yagci,Abdullah AKSU,Nuray BALKIS. Владелец: Istanbul Teknik Universitesi ITU. Дата публикации: 2016-07-19.

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Номер патента: US20170233253A1. Автор: Kahyun HUR,Seungyeol JEON. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2017-08-17.

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Номер патента: US20200362483A1. Автор: Yih-Ping Luh. Владелец: Qingyuan Global Technology Services Ltd. Дата публикации: 2020-11-19.

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Номер патента: US20180144789A1. Автор: SHIN Sun Hye. Владелец: SK HYNIX INC.. Дата публикации: 2018-05-24.

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Номер патента: US20140016207A1. Автор: Hong Hie Lee,Kookheon Char,Hyunsik Yoon,Kahp-Yang Suh. Владелец: SNU R&DB FOUNDATION. Дата публикации: 2014-01-16.

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Номер патента: EP3831480A1. Автор: Lei Wang,Xue Dong,Xiaochuan Chen,Haisheng Wang,Yingming Liu,Pinchao GU,Changfeng LI,Xiaoliang DING. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-06-09.

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Номер патента: US20170136832A1. Автор: Soon Hong So,Jeong Heon Kim. Владелец: Hankook Tire Co Ltd. Дата публикации: 2017-05-18.

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Номер патента: US20190373981A1. Автор: Yih-Ping Luh. Владелец: Qingyuan Global Technology Services Ltd. Дата публикации: 2019-12-12.

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Номер патента: DE102004007696A1. Автор: Horst Gröninger. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2005-09-01.

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Номер патента: US20110195274A1. Автор: Atsushi Seki,Shin Masuda,Kazunori Shiota. Владелец: Advantest Corp. Дата публикации: 2011-08-11.

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Номер патента: US20070161136A1. Автор: Yea-Chung Shih,Ta-Jung Su,Cheng-Fang Su. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2007-07-12.

Semiconductor device provided with matrix type current load driving circuits, and driving method thereof

Номер патента: US7133012B2. Автор: Katsumi Abe. Владелец: NEC Corp. Дата публикации: 2006-11-07.

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Номер патента: US20050145891A1. Автор: Katsumi Abe. Владелец: NEC Corp. Дата публикации: 2005-07-07.

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Номер патента: CN1643563A. Автор: 安部胜美. Владелец: NEC Corp. Дата публикации: 2005-07-20.

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Номер патента: EP3674460A1. Автор: Yih Ping Luh. Владелец: Qingyuan Global Technology Services Ltd. Дата публикации: 2020-07-01.

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Номер патента: US20190345264A1. Автор: Yanwu WANG,Mingliang GE,Mingyi DU. Владелец: South China University of Technology SCUT. Дата публикации: 2019-11-14.

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Номер патента: US20230175192A1. Автор: Dongpil SEO,Yonghan KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-06-08.

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Номер патента: TW201031647A. Автор: Dai Oguro. Владелец: Mitsubishi Gas Chemical Co. Дата публикации: 2010-09-01.

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Номер патента: EP3548130C0. Автор: Daniel H Kim,Dong Suk Shin,Viljar Palmre,Younghee SHIM. Владелец: Xcath Inc. Дата публикации: 2024-06-12.

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Номер патента: TW475274B. Автор: Guo-Feng Peng,Shiou-Wen Du,Wen-Chiuan Chen,Meng-Nan He. Владелец: Kingpak Tech Inc. Дата публикации: 2002-02-01.

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Номер патента: US20210246044A1. Автор: Hong Jin Woo,Kim Dong Oh,Yoon Chan Sic,Lee Ki Seok,PARK Seok Han,JUNG Ki Wook,LEE Ho In,JANG Ju Yeon,PARK Je Min. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2021-08-12.

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Номер патента: MY145598A. Автор: Katsuyuki Kitagawa. Владелец: Japan Tsusyo YK. Дата публикации: 2012-02-29.

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Номер патента: US20130118011A1. Автор: Hsiu-Wei Yang. Владелец: Asia Vital Components Co Ltd. Дата публикации: 2013-05-16.

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Номер патента: US20210016490A1. Автор: Hyun Su Kim,Hong Seok Kim,Maeng Hyo Cho,Hee Jun SUNG. Владелец: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION. Дата публикации: 2021-01-21.

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Номер патента: US20240166255A1. Автор: Tae Hong Kim. Владелец: Hyundai Mobis Co Ltd. Дата публикации: 2024-05-23.

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Номер патента: US11897184B2. Автор: Hyun Su Kim,Hong Seok Kim,Maeng Hyo Cho,Hee Jun SUNG. Владелец: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION. Дата публикации: 2024-02-13.

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Номер патента: EP2549104A1. Автор: Xiaogang Yi,Xionghui Miao,Shijian Liu. Владелец: Hunan Sany Intelligent Control Equipment Co Ltd. Дата публикации: 2013-01-23.

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Номер патента: CA2860165C. Автор: Shinya Saitoh,Nobuhiro Fujita,Tatsuo Yokoi,Hiroshi Shuto,Yuuki KANZAWA,Ryohta Niiya. Владелец: Nippon Steel and Sumitomo Metal Corp. Дата публикации: 2016-12-06.

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Номер патента: EP4343160A1. Автор: Yi-Chieh Shih. Владелец: Bi Mirth Corp. Дата публикации: 2024-03-27.

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Номер патента: US20230287640A1. Автор: Weidong Li,Junhui CAO,Xuan Sun,Xudong SHAO,Deqiang ZOU. Владелец: Hunan University. Дата публикации: 2023-09-14.

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Номер патента: US20240035441A1. Автор: Jun Yang,Jiangang Zhao,Chaoyi PENG,Binbin HOU,Xuebin FENG,Hang Deng,Jiehua HU,Sheng FAN,Penghui LIU. Владелец: Zhuzhou Times New Material Technology Co Ltd. Дата публикации: 2024-02-01.

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Номер патента: US20200342927A1. Автор: Weisheng Zhao,Erya Deng,Wenlong Cai,Kaihua Cao,Shaohua Yan. Владелец: BEIHANG UNIVERSITY. Дата публикации: 2020-10-29.

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Номер патента: US11170833B2. Автор: Weisheng Zhao,Erya Deng,Wenlong Cai,Kaihua Cao,Shaohua Yan. Владелец: BEIHANG UNIVERSITY. Дата публикации: 2021-11-09.

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Номер патента: US20210010223A1. Автор: Xuedong Cui,Tengyue Cui,Jiguang Wu. Владелец: Beijing Hengxiang Hongye Foundation Reinforcement Technology Co Ltd. Дата публикации: 2021-01-14.

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Номер патента: US11802389B2. Автор: Tie Li,Yimei YUAN. Владелец: Guangdong Polytechnic Of Water Resources And Electric Engineering. Дата публикации: 2023-10-31.

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Номер патента: US20240093712A1. Автор: Yi-Chieh Shih. Владелец: Bi Mirth Corp. Дата публикации: 2024-03-21.

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Номер патента: US20210060547A1. Автор: Lei Wang,Xue Dong,Xiaochuan Chen,Haisheng Wang,Yingming Liu,Pinchao GU,Changfeng LI,Xiaoliang DING. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2021-03-04.

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Номер патента: US20240151257A1. Автор: Ting-Jui Wang. Владелец: Individual. Дата публикации: 2024-05-09.

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Номер патента: US20120001295A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-01-05.

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Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

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Номер патента: US20120003565A1. Автор: Lee Jong Ho,KIM Jong Cheol,LEE Hae-Weon,SON Ji-Won,KIM Hae-Ryoung,Noh Ho-Sung. Владелец: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2012-01-05.

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Номер патента: TWI290751B. Автор: Brian S Lee. Владелец: Promos Technologies Inc. Дата публикации: 2007-12-01.

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Номер патента: US20120212272A1. Автор: YOKOU Hideyuki,Shigezane Yasuyuki. Владелец: ELPIDA MEMORY, INC.. Дата публикации: 2012-08-23.

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Номер патента: US20120048355A1. Автор: Chang Tao-Chih,Hsieh Hsin-Hsin,Hsi Chi-Shiung. Владелец: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE. Дата публикации: 2012-03-01.

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Номер патента: US20120313249A1. Автор: Hsu Chia-Liang,HSU TZU-CHIEH,Chen Shih-I,Lin Ching-Pei. Владелец: . Дата публикации: 2012-12-13.

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Номер патента: US20130049159A1. Автор: Schmidt Gerhard. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2013-02-28.

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Номер патента: JP3481812B2. Автор: 保 三宅. Владелец: Renesas Technology Corp. Дата публикации: 2003-12-22.

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Номер патента: US20120292728A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-11-22.

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Номер патента: US20130043584A1. Автор: Kim Yong-Hoon,Kwon Heung-Kyu,SHIN Seong-ho,Choi Yun-Seok. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2013-02-21.

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Номер патента: AU2002361293A1. Автор: Jean-Luc Sandoz. Владелец: Individual. Дата публикации: 2003-05-19.

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Номер патента: US20130249048A1. Автор: KIM Hyung-Hwan,Pyo Seung-Seok,CHOI Bong-Ho,LEE Jin-Yul. Владелец: . Дата публикации: 2013-09-26.

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Номер патента: US20120146123A1. Автор: . Владелец: Semiconductor Manufacturing International (Shanghai) Corporation. Дата публикации: 2012-06-14.

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Номер патента: TW200942905A. Автор: Han-Ping Kuo,Martinus Tony Wijaya. Владелец: AU OPTRONICS CORP. Дата публикации: 2009-10-16.

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Номер патента: TW200537130A. Автор: Rou-Ching Yang,En-Boa Wu,Guo-Qing Dan. Владелец: En-Boa Wu. Дата публикации: 2005-11-16.

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Номер патента: TW533576B. Автор: Yuan-Chang Liou,Tian-Hau Tang,Mu-Jiun Wang. Владелец: United Microelectronics Corp. Дата публикации: 2003-05-21.

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Номер патента: TW200842676A. Автор: Shun-Cheng HUNG. Владелец: Mitac Int Corp. Дата публикации: 2008-11-01.

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Номер патента: TW200929612A. Автор: Chien-Yuan Wang,Yen-Wen Chen,Jui-Hung Yeh,Chih-Chiang Lu,Wei-Chih Peng,Chun-Yi Wu,Min-Hsun Shieh,Yu-Wei Tu,Shih-Chin Hung. Владелец: Epistar Corp. Дата публикации: 2009-07-01.

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Номер патента: TW200700231A. Автор: Li-Hsien Yen. Владелец: Li-Hsien Yen. Дата публикации: 2007-01-01.

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Номер патента: TWI231565B. Автор: Chung-Long Chang,Chun-Hon Chen. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2005-04-21.

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Номер патента: TW464985B. Автор: Ming-Tzung Dung. Владелец: United Microelectronics Corp. Дата публикации: 2001-11-21.

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Номер патента: TW409421B. Автор: Sen-Huang Huang,Sheng-Yang Huang,Shan-Wen Chiou. Владелец: PixArt Imaging Inc. Дата публикации: 2000-10-21.

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Номер патента: TW569635B. Автор: Guo-Jiun Shen. Владелец: Cx Technology Corp. Дата публикации: 2004-01-01.

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Номер патента: TW200501314A. Автор: Chung-Long Chang,Chun-Hon Chen. Владелец: Taiwan Semiconductor Mfg Co Ltd. Дата публикации: 2005-01-01.

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Номер патента: TWI222709B. Автор: Bin-Yi Shin,Jeng-Chiuan Wei. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2004-10-21.

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Номер патента: TWI221036B. Автор: Feng-Ren Jian,Lung-Jian Chen. Владелец: Formosa Epitaxy Inc. Дата публикации: 2004-09-11.

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Номер патента: TW200306675A. Автор: Feng-Ren Jian,Long-Jian Chen. Владелец: Formosa Epitaxy Inc. Дата публикации: 2003-11-16.

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Номер патента: TW200507172A. Автор: Pin-Yi Shin,Jeng-Chein Wei. Владелец: Taiwan Semiconductor Mfg Co Ltd. Дата публикации: 2005-02-16.

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Номер патента: TW409420B. Автор: Shr-Yau Lin,Jeng-Bang Ye,Shu-Li Chen. Владелец: United Microelectronics Corp. Дата публикации: 2000-10-21.

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Номер патента: TW471167B. Автор: Yu-Ru Yang,Yu-Hung Huang,Guo-Yu Yang,Ching-Min Li. Владелец: United Microelectronics Corp. Дата публикации: 2002-01-01.

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Номер патента: TW448574B. Автор: Sheng-Shiung Yang. Владелец: United Microelectronics Corp. Дата публикации: 2001-08-01.

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Номер патента: TW471013B. Автор: Tai-Sheng Feng,Tzung-Li Han,Ming-Jr Shiuan. Владелец: United Microelectronics Corp. Дата публикации: 2002-01-01.

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Номер патента: TW201105450A. Автор: Yau-Hung Chiou,Shu-Hui Fan,Yuan-Li Chuang. Владелец: Chenming Mold Ind Corp. Дата публикации: 2011-02-16.

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Номер патента: TW448572B. Автор: Sheng-Shiung Yang. Владелец: United Microelectronics Corp. Дата публикации: 2001-08-01.

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Номер патента: TW448571B. Автор: Ming-Tzung Dung. Владелец: United Microelectronics Corp. Дата публикации: 2001-08-01.

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Номер патента: TW448573B. Автор: Ming-Tzung Dung. Владелец: United Microelectronics Corp. Дата публикации: 2001-08-01.

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Номер патента: US20120319209A1. Автор: . Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2012-12-20.

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Номер патента: US20130011979A1. Автор: . Владелец: SS SC IP, LLC. Дата публикации: 2013-01-10.

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Номер патента: US20140342539A1. Автор: Shinohara Masaaki. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2014-11-20.

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