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MEMORY CELL, MEMORY DEVICE, AND OPERATION METHOD OF MEMORY CELL

Номер патента: US20200083236A1
Опубликовано: 12-03-2020
Автор(ы): Jian Shen, Wenxuan WANG, Yunning LI
Принадлежит: Shenzhen Weitongbo Technology Co Ltd
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Multiple pin configurations of memory devices

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MEMORY CELLS

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INTERLEAVED MEMORY PROGRAM AND VERIFY METHOD, DEVICE AND SYSTEM

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Circuit and method for eliminating bit line leakage current in random access memory devices

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SEMICONDUCTOR MEMORY DEVICE

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