Ldmos with self-aligned body and hybrid source
Номер патента: EP4200911A1
Опубликовано: 28-06-2023
Автор(ы): Brendan TONER, Christoph Ellmers, Gary M. Dolny, Manoj Chandrika Reghunathan, Stefan EISENBRANDT, William R RICHARDS, Jr., Zhengchao Liu
Принадлежит: Amplexia LLC, X Fab Global Services GmbH
Опубликовано: 28-06-2023
Автор(ы): Brendan TONER, Christoph Ellmers, Gary M. Dolny, Manoj Chandrika Reghunathan, Stefan EISENBRANDT, William R RICHARDS, Jr., Zhengchao Liu
Принадлежит: Amplexia LLC, X Fab Global Services GmbH
Реферат: Devices and methods for providing a power transistor structure with a shallow source region include implanting a dopant of a first dopant polarity into a drift region on a source side of a gate structure to form a body region, the body region being self-aligned to, and extending under, the gate structure, and producing a shallow body region wherein the source side hybrid contact mitigates punch through of the shallow self-aligned body region and suppresses triggering of a parasitic bipolar. A retrograde body well, of the first dopant polarity, may be disposed beneath, and noncontiguous with, the shallow self-aligned body region, wherein the retrograde body well improves the electric field profile of the shallow self-aligned body region. A variety of power transistor structures are produced from such devices and methods.
LDMOS with self-aligned body and hybrid source
Номер патента: US12113106B2. Автор: Christoph Ellmers,Manoj Chandrika Reghunathan,Gary M Dolny,William R Richards,Stefan EISENBRANDT,Brendan TONER,Zhengchao Liu. Владелец: Amplexia LLC. Дата публикации: 2024-10-08.