Semiconductor memory with programmable bitline multiplexers
Номер патента: EP1285442A2
Опубликовано: 26-02-2003
Автор(ы): Dmitry Netis, Gerhard Mueller, Toshiaki Kirihata
Принадлежит: Infineon Technologies North America Corp, International Business Machines Corp
Опубликовано: 26-02-2003
Автор(ы): Dmitry Netis, Gerhard Mueller, Toshiaki Kirihata
Принадлежит: Infineon Technologies North America Corp, International Business Machines Corp
Реферат: There is provided a semiconductor memory device that includes: a plurality of memory cells arranged in at least two groups (102); at least one sense amplifier (SA); a first and a second multiplexer (MUXs); and at least one programmable control device (control circuit). Each multiplexer is adapted to couple at least one of the groups to the amplifier. The programmable control device is adapted to control the first and said second multiplexers. In one embodiment, the programmable control device is adapted to control the multiplexers independently.
Semiconductor memory devices with open bitline architectures and methods of controlling the bitlines of such semiconductor memory devices
Номер патента: US20070047350A1. Автор: Ji-hoon Park,Chang-Yeong Jeong,Sung-Wan Joo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2007-03-01.