Memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
Номер патента: EP3044816A1
Опубликовано: 20-07-2016
Автор(ы): Gurtej S. Sandhu, Witold Kula
Принадлежит: Micron Technology Inc
Опубликовано: 20-07-2016
Автор(ы): Gurtej S. Sandhu, Witold Kula
Принадлежит: Micron Technology Inc
Реферат: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy ("MA") with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region to reduce an oxygen concentration and, thus, an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
Memory cells, methods of fabrication, semiconductor device structures, and memory systems
Номер патента: US09379315B2. Автор: Wei Chen,Witold Kula,Sunil Murthy. Владелец: Micron Technology Inc. Дата публикации: 2016-06-28.