Substrate processing apparatus and semiconductor devices manufacturing method.

Substrate processing apparatus and semiconductor devices manufacturing method

Номер патента: US20110192347A1
Опубликовано: 11-08-2011
Автор(ы): Harunobu Sakuma, Mitsuro Tanabe, Tadashi Takasaki, Yoshihiko Yanagisawa
Принадлежит: HITACHI KOKUSAI ELECTRIC INC
Получить PDF файл: Открыть в новом окне

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

DEPOSITION METHOD AND A DEPOSITION APPARATUS OF FINE PARTICLES, A FORMING METHOD AND A FORMING APPARATUS OF CARBON NANOTUBES, AND A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20150207074A1. Автор: Awano Yuji,Shimizu Noriyoshi. Владелец: FUJITSU LIMITED. Дата публикации: 2015-07-23.

Substrate processing device, liquid raw material supplement system, semiconductor device manufacturing method, program

Номер патента: KR102248860B1. Автор: 마사카즈 시마다,노리유키 이소베,겐이치 스자키,다케시 가사이,요시타카 가와하라. Владелец: 가부시키가이샤 코쿠사이 엘렉트릭. Дата публикации: 2021-05-06.

Substrate processing chamber, deposition apparatus and gas distributor

Номер патента: JP5100936B2. Автор: ムルゲシュラクスマン,クリシュナラヤパデュマナバーン,エス．コックスミッシェル,ライキャンフェン．,デュベイナレンドラ,ケイ．チョトム,ゴンダールカールスディール,エル．パンリリー. Владелец: Applied Materials Inc. Дата публикации: 2012-12-19.

Organic layer deposition apparatus, method of manufacturing organic light emitting display device using the apparatus, and organic light emitting display device manufactured using the method

Номер патента: US20160111689A1. Автор: Kyu-Seob Han. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-04-21.

Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor

Номер патента: US20110312187A1. Автор: Kunihiko Suzuki,Hideki Ito. Владелец: Individual. Дата публикации: 2011-12-22.

Manufacturing apparatus and method for semiconductor device

Номер патента: US20110092075A1. Автор: Kunihiko Suzuki,Shinichi Mitani. Владелец: Nuflare Technology Inc. Дата публикации: 2011-04-21.

Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method

Номер патента: US20110186820A1. Автор: Un-Cheol Sung,Jung-Yeon Kim. Владелец: Samsung Mobile Display Co Ltd. Дата публикации: 2011-08-04.

Substrate processing apparatus, substrate holder, and semiconductor device manufacturing method

Номер патента: JP6560767B2. Автор: 竹林　雄二,雄二竹林,正憲境,加我　友紀直,友紀直加我,境　正憲,敦士平野,真一島田,島田　真一. Владелец: Kokusai Electric Corp. Дата публикации: 2019-08-14.

Substrate processing apparatus, gas nozzle, and semiconductor device manufacturing method

Номер патента: JPWO2018008088A1. Автор: 隆史佐々木,周平西堂,吉田　秀成,秀成吉田,花島　建夫,建夫花島. Владелец: Kokusai Electric Corp. Дата публикации: 2019-01-31.

Manufacturing method, substrate processing device and the recording medium of semiconductor devices

Номер патента: CN109559974A. Автор: 佐野敦,松冈树,中谷公彦,龟田贤治. Владелец: INTERNATIONAL ELECTRIC CO Ltd. Дата публикации: 2019-04-02.

Apparatus and method of forming thin film, and manufacturing method of electronic component using the apparatus

Номер патента: TW200306565A. Автор: Satoshi Matsui,Masato Koshikawa. Владелец: TDK Corp. Дата публикации: 2003-11-16.

Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method

Номер патента: US20150299843A1. Автор: Sang-Pil Lee,Jung-Bae Song,Young-Rok SONG,I Beohm-Rock CHOI. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-10-22.

Thin film deposition apparatus and organic light emitting display device manufacturing method using the same

Номер патента: JP5328727B2. Автор: 鎔燮崔,昌睦 ▲曹▼,枝淑 ▲呉▼,鍾憲金,煕哲康,潤美李. Владелец: Samsung Display Co Ltd. Дата публикации: 2013-10-30.

Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method

Номер патента: US9279177B2. Автор: Yong-Sup Choi,Myeng-Woo Nam. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-03-08.

Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method

Номер патента: US9136310B2. Автор: Sang-Pil Lee,Beohm-Rock Choi,Jung-Bae Song,Young-Rok SONG. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-09-15.

Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method

Номер патента: CN102286727A. Автор: 崔凡洛,宋泳录,宋正培,李相泌. Владелец: Samsung Mobile Display Co Ltd. Дата публикации: 2011-12-21.

Organic layer deposition apparatus and organic light emitting display device manufacturing method using the same

Номер патента: JP5882668B2. Автор: 興烈羅,ワレリー・プルシンスキー,レン・カプラン,世呼鄭,元植玄,慶太朴,炳成鄭,鎔燮崔. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-03-09.

Thin film deposition apparatus and organic light emitting display device manufacturing method using the same

Номер патента: JP5677785B2. Автор: 鎔燮崔,相洙金,鍾憲金,永默崔,永默崔,昌睦趙,昌睦趙,鍾憲金,鎔燮崔,金　相　洙,煕哲姜,煕哲姜. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-02-25.

Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method

Номер патента: US20110042659A1. Автор: Jong-Heon Kim,Hee-Cheol Kang,Hyun-Sook Park,Ji-Sook Oh,Jae-Kwang Ryu. Владелец: Samsung Mobile Display Co Ltd. Дата публикации: 2011-02-24.

The manufacture method of semiconductor devices and substrate manufacture method and lining processor

Номер патента: CN102763193B. Автор: 佐佐木隆史,今井义则,栗林幸永,中嶋定夫. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2016-05-11.

Semiconductor device and its manufacturing method

Номер патента: KR100322821B1. Автор: 미끼히로시,오지유즈루,다찌신이찌,가네호리게이이찌. Владелец: 가나이 쓰도무. Дата публикации: 2002-07-02.

Substrate material for mounting semiconductor device thereon and manufacturing method thereof

Номер патента: US5167697A. Автор: Yoshihiro Umeda,Takeshie Koumura,Jitsuo Matsumoto. Владелец: Nippon Tungsten Co Ltd. Дата публикации: 1992-12-01.

Cured product production method, laminate production method, semiconductor device manufacturing method, and processing liquid

Номер патента: EP4398289A1. Автор: Atsushi Nakamura,Naoki Sato,Atsuyasu Nozaki,Misaki TAKASHIMA. Владелец: Fujifilm Corp. Дата публикации: 2024-07-10.

Adhesive film for use in semiconductor device manufacture, manufacturing method of said adhesive film, semiconductor device, and manufacturing method of semiconductor device

Номер патента: SG11202002552PA. Автор: Keisuke Ohkubo,Masanori Natsukawa. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2020-04-29.

Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate

Номер патента: EP0962963A4. Автор: Kunimasa Takahashi,Masao Uchida,Makoto Kitabatake. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2004-08-04.

Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method

Номер патента: EP1860688A4. Автор: Iori Yoshida,Yoshinori Kon. Владелец: AGC Seimi Chemical Ltd. Дата публикации: 2010-08-18.

Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method

Номер патента: TW200643157A. Автор: Iori Yoshida,Yoshinori Kon. Владелец: Seimi Chem Kk. Дата публикации: 2006-12-16.

Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method

Номер патента: EP1860688A1. Автор: Iori Yoshida,Yoshinori Kon. Владелец: AGC Seimi Chemical Ltd. Дата публикации: 2007-11-28.

Abrasive for semiconductor integrated circuit device, method for polishing semiconductor integrated circuit device and semiconductor integrated circuit device manufacturing method

Номер патента: WO2006098141A1. Автор: Iori Yoshida,Yoshinori Kon. Владелец: Asahi Glass Company, Limited. Дата публикации: 2006-09-21.

METHOD FOR FORMING GALLIUM NITRIDE TEMPLATE SEMI-POLAR (20-23) ORIENTATION ON SILICON SUBSTRATE AND SEMICONDUCTOR LIGHT-EMPTING DEVICE, MANUFACTURING USING THE METHOD

Номер патента: RU2013137514A. Автор: Сергей Арсеньевич Кукушкин,Андрей Витальевич Лукьянов,Андрей Викторович Осипов,Василий Николаевич БЕССОЛОВ,Елена Васильевна Коненкова. Владелец: Общество с ограниченной ответственностью "Новые Кремневые Технологии". Дата публикации: 2015-02-20.

Negative photosensitive resin composition, cured film, cured film manufacturing method, semiconductor device, laminated body manufacturing method, semiconductor device manufacturing method, and polyimide precursor

Номер патента: TWI728137B. Автор: 吉田健太,岩井悠,渋谷明規. Владелец: 日商富士軟片股份有限公司. Дата публикации: 2021-05-21.

Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same

Номер патента: US20150207074A1. Автор: Noriyoshi Shimizu,Yuji Awano. Владелец: Fujitsu Ltd. Дата публикации: 2015-07-23.

Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same

Номер патента: US20130109170A1. Автор: Noriyoshi Shimizu,Shintaro Sato,Yuji Awano. Владелец: Fujitsu Ltd. Дата публикации: 2013-05-02.

Film-like adhesive and its manufacturing method, and semiconductor device and its manufacturing method

Номер патента: JPWO2019150445A1. Автор: 祐樹中村,大輔舛野,慎太郎橋本,智陽山崎,健太菊地. Владелец: Resonac Corporation. Дата публикации: 2021-01-14.

Engagement metal thickener, conjugant and its manufacturing method and semiconductor device and its manufacturing method

Номер патента: CN110430951A. Автор: 中子伟夫,石川大,江尻芳则,川名祐贵,根岸征央,须镰千绘. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2019-11-08.

Adhesive film, laminated body and its solidfied material and semiconductor device and its manufacturing method

Номер патента: CN105027273B. Автор: 前岛研三. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2019-01-22.

Organic transistor, compound, organic semiconductor material for non-luminescent organic semiconductor device, organic transistor material, coating solution for non-luminescent organic semiconductor device, organic transistor manufacturing method, organic semiconductor film manufacturing method, non-luminescent organic semiconductor device Organic semiconductor film and organic semiconductor material synthesis method

Номер патента: JP6082927B2. Автор: 哲北村,博昭津山,由久宇佐美,哲也渡邉,北村　哲,純一竹谷,岡本　敏宏,敏宏岡本,英治福▲崎▼,雅史小柳,渡邉　哲也,野村　公篤,公篤野村,宇佐美　由久. Владелец: University of Tokyo NUC. Дата публикации: 2017-02-22.

Manufacturing method for cured substance, manufacturing method for laminate, and manufacturing method for semiconductor device, and treatment liquid

Номер патента: US11934102B2. Автор: Atsushi Nakamura,Naoki Sato,Atsuyasu Nozaki,Misaki TAKASHIMA. Владелец: Fujifilm Corp. Дата публикации: 2024-03-19.

Manufacturing method for cured substance, manufacturing method for laminate, and manufacturing method for semiconductor device, and treatment liquid

Номер патента: US20230350305A1. Автор: Atsushi Nakamura,Naoki Sato,Atsuyasu Nozaki,Misaki TAKASHIMA. Владелец: Fujifilm Corp. Дата публикации: 2023-11-02.

reusable fuel processing apparatus, apparatus and method for cleaning carbon carbon from vapors

Номер патента: BR112018076624A2. Автор: Fowler David,OLUWASEUN Oluwadare,F. Tenore Anthony,N. Tenore Anthony. Владелец: Golden Renewable Energy, LLC. Дата публикации: 2019-04-02.

Diboride single crystal substrate, semiconductor device using this and its manufacturing method

Номер патента: EP1538243A4. Автор: Satoshi Kamiyama,Hiroyuki Matsunami,Hiroyuki Kinoshita,Isamu Akasaki,Hiroshi Amano,Shigeki Otani,Jun Suda. Владелец: Kyocera Corp. Дата публикации: 2008-04-02.

ORGANIC SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR FILM FORMING COMPOSITION, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD

Номер патента: JP6274529B2. Автор: 博昭津山,由久宇佐美,純一竹谷,岡本　敏宏,敏宏岡本,宇佐美　由久. Владелец: University of Tokyo NUC. Дата публикации: 2018-02-07.

GRANULAR MATERIAL, GRANULAR MATERIAL MANUFACTURING METHOD, THREE-DIMENSIONAL LAMINATED AND SHAPED MOLD MANUFACTURING APPARATUS, AND THREE-DIMENSIONAL LAMINATED AND SHAPED MOLD MANUFACTURING METHOD

Номер патента: US20180112067A1. Автор: NAGAI Yasuhiro,Takeshita Kosuke,OKANE Toshimitsu. Владелец: TECHNOLOGY RESEARCH ASSOCIATION FOR FUTURE ADDITIVE MANUFACTURING. Дата публикации: 2018-04-26.

Semiconductor device, base and manufacturing method thereof

Номер патента: JP6720747B2. Автор: 修司塩路. Владелец: Nichia Corp. Дата публикации: 2020-07-08.

Semiconductor devices and its manufacture method

Номер патента: CN107924912A. Автор: 李光珠,金荣国,金丁鹤,金熹正,金塞拉,南承希. Владелец: LG Chemical Co Ltd. Дата публикации: 2018-04-17.

Substrate processing method, substrate processing device, and method of manufacturing a semiconductor device

Номер патента: US20240120177A1. Автор: Kyung-Sun Kim,Seung Bo SHIM,Tae-Hwa Kim,Ji Mo LEE,Jae Bin KIM,Dong Hyeon Na,Myeong Soo SHIN,Woong Jin CHEON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-04-11.

Substrate processing apparatus, article manufacturing method, substrate processing method, substrate processing system, management apparatus, and storage medium

Номер патента: US20200333718A1. Автор: Shinichiro Koga,Takahiro Takiguchi. Владелец: Canon Inc. Дата публикации: 2020-10-22.

Substrate processing system, aligning apparatus, and substrate shape monitoring method

Номер патента: US20230294932A1. Автор: Kento TOKAIRIN. Владелец: Tokyo Electron Ltd. Дата публикации: 2023-09-21.

Substrate cartridge, substrate processing apparatus, substrate processing system, control apparatus, and method of manufacturing display element

Номер патента: US8801307B2. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2014-08-12.

Microwave plasma processing apparatus, slot antenna, and semiconductor device

Номер патента: US09875882B2. Автор: Toshihiko Iwao,Kazushi Kaneko. Владелец: Tokyo Electron Ltd. Дата публикации: 2018-01-23.

Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof

Номер патента: US7427789B2. Автор: Masafumi Muramatsu. Владелец: Sony Corp. Дата публикации: 2008-09-23.

Semiconductor device and a manufacturing method thereof

Номер патента: US09396971B2. Автор: Yukihiro Sato,Nobuya Koike. Владелец: Renesas Electronics Corp. Дата публикации: 2016-07-19.

Semiconductor device tape carrier, manufacturing method for semiconductor device, semiconductor device, and semiconductor module device

Номер патента: US20080061432A1. Автор: Kenji Toyosawa,Toshiharu Seko. Владелец: Sharp Corp. Дата публикации: 2008-03-13.

Information processing system, information processing apparatus, apparatus, and non-transitory computer readable medium storing information processing program

Номер патента: US09300631B2. Автор: Takayuki Suzuki. Владелец: Fuji Xerox Co Ltd. Дата публикации: 2016-03-29.

Semiconductor device package and manufacturing method thereof

Номер патента: US09966300B1. Автор: Ronald Patrick Huemoeller,David Jon Hiner,Michael G. Kelly,Won Chul Do. Владелец: Amkor Technology Inc. Дата публикации: 2018-05-08.

Semiconductor device package and manufacturing method thereof

Номер патента: US09553041B1. Автор: Ronald Patrick Huemoeller,David Jon Hiner,Michael G. Kelly,Won Chul Do. Владелец: Amkor Technology Inc. Дата публикации: 2017-01-24.

Semiconductor device package and manufacturing method thereof

Номер патента: US12136565B2. Автор: Ronald Patrick Huemoeller,David Jon Hiner,Michael G. Kelly,Won Chul Do. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-11-05.

Semiconductor device and its manufacturing method

Номер патента: RU2544887C2. Автор: Хидео КОБАЯСИ,Масанори ОГУРА,Тецунобу КОТИ,Масаси КИТАНИ. Владелец: Кэнон Кабусики Кайся. Дата публикации: 2015-03-20.

Apparatuses and methods involving semiconductor device with current-blocking layer

Номер патента: WO2023205169A1. Автор: Ke Zeng,Srabanti Chowdhury. Владелец: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY. Дата публикации: 2023-10-26.

Semiconductor device structure and manufacturing method

Номер патента: US20150262955A1. Автор: Chun-Jen Chen,Yi-Chen Liu,Yi-Jen LAI,Hsi-Kuei Cheng,Yung-Sheng Liu,Li-Guo LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-09-17.

Semiconductor device structure and manufacturing method

Номер патента: US09806046B2. Автор: Chun-Jen Chen,Yi-Chen Liu,Yi-Jen LAI,Hsi-Kuei Cheng,Yung-Sheng Liu,Li-Guo LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-31.

Semiconductor device structure and manufacturing method

Номер патента: US09735123B2. Автор: Chun-Jen Chen,Yi-Chen Liu,Yi-Jen LAI,Hsi-Kuei Cheng,Yung-Sheng Liu,Li-Guo LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-15.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20240371630A1. Автор: Wei-Ting YEH,I-Hsuan LO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and its manufacturing method

Номер патента: US20080061327A1. Автор: Yu-Chou Lee,Tsung-Chi Cheng,Hung-Yi Hsu,Yea-Chung Shih,Jui-Chung Chang,Hsiang-Hsien Chung,Wen-Kuang Tsao,Ching-Yeh Kuo. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2008-03-13.

Semiconductor device and its manufacturing method

Номер патента: US20020180053A1. Автор: Hirokazu Ejiri. Владелец: Sony Corp. Дата публикации: 2002-12-05.

Semiconductor device and a manufacturing method thereof

Номер патента: US09905429B2. Автор: Masaaki Shinohara,Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2018-02-27.

Semiconductor device and a manufacturing method thereof

Номер патента: US09633859B2. Автор: Masaaki Shinohara,Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2017-04-25.

Semiconductor device and related manufacturing method

Номер патента: US20130168746A1. Автор: Fumitake Mieno. Владелец: Semiconductor Manufacturing International Corp. Дата публикации: 2013-07-04.

Semiconductor device and its manufacturing method

Номер патента: US20140241051A1. Автор: Toshihiro Tanaka,Satoru Hanzawa,Nozomu Matsuzaki,Fumihiko Nitta. Владелец: Renesas Electronics Corp. Дата публикации: 2014-08-28.

Semiconductor device and its manufacturing method

Номер патента: US20110211390A1. Автор: Toshihiro Tanaka,Satoru Hanzawa,Nozomu Matsuzaki,Fumihiko Nitta. Владелец: Renesas Technology Corp. Дата публикации: 2011-09-01.

Semiconductor device and its manufacturing method

Номер патента: US20080111209A1. Автор: Chihiro Shin. Владелец: Seiko Epson Corp. Дата публикации: 2008-05-15.

Semiconductor device and related manufacturing method

Номер патента: US20170179142A1. Автор: YIYING Zhang,Erhu ZHENG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-06-22.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20240014213A1. Автор: Zheng Lv,Xunyi SONG,Chihsen Huang. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2024-01-11.

Semiconductor device and related manufacturing method

Номер патента: US09978760B2. Автор: YIYING Zhang,Erhu ZHENG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-22.

Semiconductor device structure and manufacturing method thereof

Номер патента: US09450093B2. Автор: I-Chih Chen,Chih-Mu Huang,Fu-Tsun Tsai,Chih-Ming Hsieh,Yung-Fa LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-20.

Apparatus and method fabricating semiconductor device

Номер патента: US12014905B2. Автор: Jinseok Lee,SeungBo SHIM,Sungil Cho,Nam Kyun Kim,Donghyeon NA,Chungho CHO,Sungyong LIM,Minjoon Kim,Tae-Sun Shin,Deokjin Kwon,Jin Young Bang,Bongju Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

Semiconductor device and its manufacturing method, and display device and electronic appliance

Номер патента: US20070138477A1. Автор: Tatsuya Honda. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2007-06-21.

Semiconductor device and a manufacturing method thereof

Номер патента: US20160172419A1. Автор: Takeshi Kamino. Владелец: Renesas Electronics Corp. Дата публикации: 2016-06-16.

Etching apparatus and method for semiconductor device

Номер патента: US20080248650A1. Автор: Tae-yong Kwon,Kyung Hyun Han,Kyung Chun Lim,Sang Min Jeong,Dong Yong Sung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-10-09.

Semiconductor device and a manufacturing method thereof

Номер патента: US20180308884A1. Автор: Fumitoshi Takahashi,Yotaro Goto,Takeshi Kamino. Владелец: Renesas Electronics Corp. Дата публикации: 2018-10-25.

Resin-encapsulated semiconductor device and its manufacturing method

Номер патента: US09991213B2. Автор: Shoji Yasunaga,Yasumasa Kasuya,Motoharu Haga. Владелец: ROHM CO LTD. Дата публикации: 2018-06-05.

Semiconductor device and its manufacturing method

Номер патента: US09972505B2. Автор: Masahiro Matsumoto,Kazuyoshi Maekawa,Yuichi Kawano. Владелец: Renesas Electronics Corp. Дата публикации: 2018-05-15.

Semiconductor device structure and manufacturing method thereof

Номер патента: US09666574B1. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-30.

Semiconductor device structure and manufacturing method thereof

Номер патента: US09543439B2. Автор: Shih-Chieh Chang,Chin-I Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-10.

Semiconductor device and its manufacturing method

Номер патента: US09496232B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2016-11-15.

Semiconductor device and a manufacturing method thereof

Номер патента: US20150187606A1. Автор: Yukihiro Sato,Nobuya Koike. Владелец: Renesas Electronics Corp. Дата публикации: 2015-07-02.

Semiconductor device and its manufacturing method

Номер патента: US20170033074A1. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2017-02-02.

Semiconductor device and associated manufacturing method

Номер патента: US20220231147A1. Автор: Nicolas Posseme,Fabrice Nemouchi,Louis HUTIN,Cyrille Le Royer. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2022-07-21.

Semiconductor device and the manufacturing method thereof

Номер патента: US20240213319A1. Автор: Yun-Hung Shen. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-06-27.

Thyristor semiconductor device and corresponding manufacturing method

Номер патента: US12034046B2. Автор: Nicolas Guitard. Владелец: STMicroelectronics Crolles 2 SAS. Дата публикации: 2024-07-09.

Semiconductor device and its manufacturing method

Номер патента: US20090072286A1. Автор: Takafumi Noda. Владелец: Seiko Epson Corp. Дата публикации: 2009-03-19.

Semiconductor device and its manufacturing method, memory and memory system

Номер патента: US20240164096A1. Автор: Zhiliang Xia,Kun Zhang,Linchun Wu,Wenxi Zhou,Zongliang Huo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-05-16.

Semiconductor Device and a Manufacturing Method Therefor

Номер патента: US20190051647A1. Автор: Franz Hirler,Joachim Weyers,Maximilian Treiber. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2019-02-14.

Semiconductor device and related manufacturing method

Номер патента: US09991082B2. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-06-05.

Semiconductor device and a manufacturing method thereof

Номер патента: US09954120B2. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2018-04-24.

Semiconductor device and its manufacturing method

Номер патента: US09929120B2. Автор: Akira Yajima. Владелец: Renesas Electronics Corp. Дата публикации: 2018-03-27.

Semiconductor device and a manufacturing method thereof

Номер патента: US09842878B2. Автор: Takashi Terada,Shinya Hori. Владелец: Renesas Electronics Corp. Дата публикации: 2017-12-12.

Semiconductor device and related manufacturing method

Номер патента: US09825133B2. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-11-21.

Patterned structure of a semiconductor device and a manufacturing method thereof

Номер патента: US09755048B2. Автор: I-Ming Tseng,Rai-Min Huang,Tong-Jyun Huang,Kuan-Hsien Li. Владелец: United Microelectronics Corp. Дата публикации: 2017-09-05.

Semiconductor device and related manufacturing method

Номер патента: US09715987B2. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-07-25.

Semiconductor device and a manufacturing method thereof

Номер патента: US09685474B2. Автор: Takashi Terada,Shinya Hori. Владелец: Renesas Electronics Corp. Дата публикации: 2017-06-20.

Three-dimensional powder bed fusion additive manufacturing apparatus and three-dimensional powder bed fusion additive manufacturing method

Номер патента: US12103076B2. Автор: Takashi Sato,Masahiko Kawakami,Yuhei Kaneko,Yohei DAINO,Kozo Koiwa,Nari TSUTAGAWA. Владелец: Jeol Ltd. Дата публикации: 2024-10-01.

Apparatus and method for semiconductor device bonding

Номер патента: US11990445B2. Автор: Amlan Sen. Владелец: Pyxis CF Pte Ltd. Дата публикации: 2024-05-21.

Semiconductor device and its manufacturing method

Номер патента: US8304313B2. Автор: Yoshiaki Yamamoto,Koichiro Tanaka,Atsuo Isobe. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-11-06.

Ultrahigh voltage resistor, semiconductor device, and the manufacturing method thereof

Номер патента: US10109705B2. Автор: Young Bae Kim,Kwang Il Kim. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2018-10-23.

Ultrahigh voltage resistor, semiconductor device, and the manufacturing method thereof

Номер патента: US20160181351A1. Автор: Young Bae Kim,Kwang Il Kim. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2016-06-23.

Semiconductor device and its manufacturing method

Номер патента: US6933575B2. Автор: Masahiro Hayashi. Владелец: Seiko Epson Corp. Дата публикации: 2005-08-23.

Semiconductor device and its manufacturing method

Номер патента: US20030155652A1. Автор: Kenji Masumoto,Mutsumi Masumoto,Kensho Murata. Владелец: Individual. Дата публикации: 2003-08-21.

Field effect semiconductor device and its manufacturing method

Номер патента: US5034791A. Автор: Shuichi Kameyama,Atsushi Hori. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1991-07-23.

Semiconductor device and related manufacturing method

Номер патента: US20120061758A1. Автор: Ronghua Zhu,Vishnu K. Khemka,Bernhard H. Grote,Tahir A. Khan. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2012-03-15.

Semiconductor device and a manufacturing method of the same

Номер патента: US20060220221A1. Автор: Yoshihiko Shimanuki. Владелец: Renesas Technology Corp. Дата публикации: 2006-10-05.

Semiconductor device and its manufacturing method

Номер патента: US20030107054A1. Автор: Kenji Masumoto,Mutsumi Masumoto,Kensho Murata. Владелец: Individual. Дата публикации: 2003-06-12.

Semiconductor device layout structure manufacturing method

Номер патента: US20210296470A1. Автор: Gang Qian,Yanlin Sun,Yiming Miao,Xubo Chen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-09-23.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20240055501A1. Автор: Huang-Lin Chao,Chung-Liang Cheng,Pinyen Lin,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

Semiconductor device and a manufacturing method of the semiconductor device

Номер патента: US20090189136A1. Автор: Nozomu Matsuzaki. Владелец: Renesas Technology Corp. Дата публикации: 2009-07-30.

Semiconductor device and its manufacturing method

Номер патента: US7855383B2. Автор: Yu-Chou Lee,Tsung-Chi Cheng,Hung-Yi Hsu,Yea-Chung Shih,Jui-Chung Chang,Hsiang-Hsien Chung,Wen-Kuang Tsao,Ching-Yeh Kuo. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2010-12-21.

Semiconductor device and a manufacturing method thereof

Номер патента: US5926694A. Автор: Kenji Matsuda,Ippei Fujiyama,Yasuhide Chigawa. Владелец: PFU Ltd. Дата публикации: 1999-07-20.

Semiconductor device and its manufacturing method

Номер патента: US20060194398A1. Автор: Amane Oishi,Taiki Komoda. Владелец: Toshiba Corp. Дата публикации: 2006-08-31.

Semiconductor device and a manufacturing method thereof

Номер патента: US9831318B2. Автор: Hirofumi TOKITA,Tamotsu Ogata. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-28.

Apparatus and method fabricating semiconductor device

Номер патента: US20220165552A1. Автор: Jinseok Lee,SeungBo SHIM,Sungil Cho,Nam Kyun Kim,Donghyeon NA,Chungho CHO,Sungyong LIM,Minjoon Kim,Tae-Sun Shin,Deokjin Kwon,Jin Young Bang,Bongju Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-05-26.

Semiconductor device, equipment, and manufacturing method of semiconductor device

Номер патента: US20230008401A1. Автор: Takuya Hara,Takumi Ogino. Владелец: Canon Inc. Дата публикации: 2023-01-12.

Semiconductor device and a manufacturing method of the same

Номер патента: US20070075414A1. Автор: Takashi Miwa,Yasumi Tsutsumi. Владелец: Renesas Technology Corp. Дата публикации: 2007-04-05.

Semiconductor device and related manufacturing method

Номер патента: US20160013051A1. Автор: Yizhi Zeng,Jie Zhao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-01-14.

Semiconductor device and a manufacturing method thereof

Номер патента: US20130161753A1. Автор: Toshiaki Iwamatsu,Hirofumi Shinohara,Hiromasa YOSHIMORI. Владелец: Renesas Electronics Corp. Дата публикации: 2013-06-27.

Semiconductor device and a manufacturing method of semiconductor device

Номер патента: US11810970B2. Автор: Tatsuo Harada. Владелец: Mitsubishi Electric Corp. Дата публикации: 2023-11-07.

Semiconductor device and a manufacturing method of the same

Номер патента: US20110269268A1. Автор: Hiroshi Ono,Tamaki Wada,Naoki Kawanabe,Nobuyasu MUTO. Владелец: Renesas Electronics Corp. Дата публикации: 2011-11-03.

Semiconductor device structure and manufacturing method thereof

Номер патента: US10319719B2. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-11.

Semiconductor device, semiconductor device package, and manufacturing methods thereof

Номер патента: US20210021097A1. Автор: Shigeru Matsushita,Takuya Hashimoto,Sumio Uehara,Kazuhito Yumoto,Eiichiro OKAHISA,Katsuya NAKAZAWA,Suguru Kobayashi. Владелец: Nichia Corp. Дата публикации: 2021-01-21.

Silicon carbide semiconductor device and its manufacturing method

Номер патента: US20050093000A1. Автор: Satoshi Tanimoto,Hideyo Okushi. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2005-05-05.

Semiconductor device, equipment, and manufacturing method of semiconductor device

Номер патента: EP4117031A3. Автор: Takuya Hara,Takumi Ogino. Владелец: Canon Inc. Дата публикации: 2023-08-02.

Semiconductor device and a manufacturing method thereof

Номер патента: US20140319618A1. Автор: Toshiaki Iwamatsu,Hirofumi Shinohara,Hiromasa YOSHIMORI. Владелец: Renesas Electronics Corp. Дата публикации: 2014-10-30.

Semiconductor device and a manufacturing method of semiconductor device

Номер патента: US20220254908A1. Автор: Tatsuo Harada. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-08-11.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20170154882A1. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-01.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20170243865A1. Автор: Chen-Yi Lee,Alexander Kalnitsky,Pei-Lun Wang,Mohammad Al-Shyoukh,Yu-Chang Jong,Dah-Chuen Ho,Shih-Fen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-24.

Semiconductor device and its manufacturing method

Номер патента: US6806539B2. Автор: Hitoshi Aoki. Владелец: Sharp Corp. Дата публикации: 2004-10-19.

Semiconductor device and its manufacturing method

Номер патента: US20050012172A1. Автор: Kohji Kanamori. Владелец: Kohji Kanamori. Дата публикации: 2005-01-20.

Semiconductor device and a manufacturing method thereof

Номер патента: US20160268445A1. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2016-09-15.

Semiconductor device and related manufacturing method

Номер патента: US20160329427A1. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-11-10.

Semiconductor device and a manufacturing method thereof

Номер патента: US20170323983A1. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-09.

Semiconductor device and its manufacturing method

Номер патента: US20090321896A1. Автор: Takaharu Yamano. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2009-12-31.

Semiconductor device and a manufacturing method thereof

Номер патента: US20210384107A1. Автор: Hyo Ju Kim,Kyeong bin LIM,Sung Hyup Kim,Ho Chang LEE,Jeong Min NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-12-09.

Semiconductor device and its manufacturing method

Номер патента: US20170345925A1. Автор: Toshiyuki Syo. Владелец: Renesas Electronics Corp. Дата публикации: 2017-11-30.

Semiconductor device and a manufacturing method thereof

Номер патента: US20200020610A1. Автор: Hyo Ju Kim,Kyeong bin LIM,Sung Hyup Kim,Ho Chang LEE,Jeong Min NA. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-16.

Semiconductor device, capacitor, and manufacturing method thereof

Номер патента: US20230329002A1. Автор: Yasumasa Yamane,Shunpei Yamazaki,Yuki Ito,Yasuhiro Jinbo,Fumito Isaka,Tatsuya Onuki,Haruyuki Baba,Hitoshi KUNITAKE,Kazuki Tanemura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2023-10-12.

Power semiconductor devices and corresponding manufacturing methods

Номер патента: EP4238134A2. Автор: Sei-Hyung Ryu,Naeem ISLAM,Woongsun Kim,Daniel J. Lichtenwalner,Thomas E. HARRINGTON III. Владелец: Wolfspeed Inc. Дата публикации: 2023-09-06.

ZnO based semiconductor device and its manufacture method

Номер патента: EP2093810A3. Автор: Hiroyuki Kato,Akio Ogawa,Hiroshi Kotani,Michihiro Sano,Naochika Horio,Tomofumi Yamamuro. Владелец: Stanley Electric Co Ltd. Дата публикации: 2013-10-16.

Semiconductor device and a manufacturing method thereof

Номер патента: US9755086B2. Автор: Atsushi Amo. Владелец: Renesas Electronics Corp. Дата публикации: 2017-09-05.

Semiconductor device and related manufacturing method

Номер патента: US20180005890A1. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-01-04.

Semiconductor device and related manufacturing method

Номер патента: US9793173B2. Автор: Deyuan Xiao. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-10-17.

Semiconductor device and corresponding manufacturing method

Номер патента: US11915989B2. Автор: Giovanni Graziosi,Riccardo VILLA,Aurora SANNA. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2024-02-27.

Semiconductor device and corresponding manufacturing method

Номер патента: US20220238405A1. Автор: Giovanni Graziosi,Riccardo VILLA,Aurora SANNA. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2022-07-28.

Semiconductor device and its manufacturing method

Номер патента: US20230402445A1. Автор: Yoshiaki Toyoda. Владелец: Fuji Electric Co Ltd. Дата публикации: 2023-12-14.

Semiconductor device and its manufacturing method

Номер патента: US7919843B2. Автор: Takaharu Yamano. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2011-04-05.

Semiconductor Device and a Manufacturing Method Thereof

Номер патента: US20160155747A1. Автор: Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2016-06-02.

Semiconductor device and the manufacturing method thereof

Номер патента: US20240213368A1. Автор: Yun-Hung Shen. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-06-27.

Semiconductor device and the manufacturing method thereof

Номер патента: US11948884B2. Автор: Chen Ying Chieh,Lin TZU HSIANG,Chen CHIH HAO,Wu WEI CHE. Владелец: Epistar Corp. Дата публикации: 2024-04-02.

Substrate processing apparatus, transfer method of substrate support, recording medium, and manufacturing method of semiconductor device

Номер патента: US20240249963A1. Автор: Naofumi Ohashi,Yukinori Aburatani. Владелец: Kokusai Electric Corp. Дата публикации: 2024-07-25.

Substrate cartridge, substrate-processing apparatus, substrate-processing system, substrate-processing method, control apparatus, and method of manufacturing display element

Номер патента: US09379339B2. Автор: Hideya Inoue. Владелец: Nikon Corp. Дата публикации: 2016-06-28.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US09818645B2. Автор: Wei Feng,Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2017-11-14.

Substrate processing apparatus, processing system, and semiconductor device manufacturing method

Номер патента: JP6689959B2. Автор: 誠佐野,信明山口,佐野　誠,陽一三村,真御福,克己森田,英雄 ▲やなせ▼,康明澤田. Владелец: Kokusai Electric Corp. Дата публикации: 2020-04-28.

Semiconductor device and manufacturing method therefor, and electronic device

Номер патента: EP4398307A1. Автор: Xiaogen YIN,Guangxing Wan,Waisum Wong. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-07-10.

Substrate processing apparatus, heating device and semiconductor device manufacturing method

Номер патента: KR101070667B1. Автор: 마사카즈 시마다. Владелец: 가부시키가이샤 히다치 고쿠사이 덴키. Дата публикации: 2011-10-07.

Substrate processing apparatus, lid cover, and semiconductor device manufacturing method

Номер патента: JP6616258B2. Автор: 優作岡嶋,周平西堂,美香 ▲うるし▼原. Владелец: Kokusai Electric Corp. Дата публикации: 2019-12-04.

Substrate processing apparatus, temperature sensor, and semiconductor device manufacturing method

Номер патента: JP6579974B2. Автор: 英人山口,哲也小杉,晃弘大坂,徳信赤尾,純史梅川,基哉竹脇,山口　英人. Владелец: Kokusai Electric Corp. Дата публикации: 2019-09-25.

Substrate processing apparatus, lid cover and semiconductor device manufacturing method

Номер патента: JP2018018882A. Автор: 優作岡嶋,Shuhei Nishido,周平西堂,美香 ▲うるし▼原,Yusaku OKAJIMA,Mika Urushibara. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2018-02-01.

Substrate processing apparatus, heater unit, and semiconductor device manufacturing method

Номер патента: JPWO2018179157A1. Автор: 哲明稲田,英博野内,秀人立野,裕也宮西. Владелец: Kokusai Electric Corp. Дата публикации: 2019-11-07.

Manufacturing method for semiconductor device

Номер патента: US20010036685A1. Автор: Michiyoshi Takano. Владелец: Seiko Epson Corp. Дата публикации: 2001-11-01.

Semiconductor device and manufacture thereof

Номер патента: US20180315603A1. Автор: Guang Li YANG,Dae Sub Jung,De Yan CHEN. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-11-01.

Semiconductor device manufacturing method with reduced gate electrode height loss and related devices

Номер патента: US10535750B2. Автор: Yang Liu,Yongmeng Lee,Shaofeng Yu,Jianhua Ju,Zhaoxu Shen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-01-14.

Semiconductor device and manufacture thereof

Номер патента: US20190284044A1. Автор: Guangcai Fu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-09-19.

Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step

Номер патента: US20020182796A1. Автор: Makoto Kitano,Kunio Matsumoto,Akihiko Ariga,Terutaka Mori,Hidetaka Shigi,Takayoshi Watanabe,Yuji Wada,Tetsuo Kumazawa,Susumu Kasukabe,Ryuji Kohno,Naoto Ban,Shuji Shibuya,Yasuhiro Motoyama. Владелец: Individual. Дата публикации: 2002-12-05.

Semiconductor device and semiconductor device manufacturing method

Номер патента: US20170365629A1. Автор: Koichi Kaneko,Hirokazu Fujimaki. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2017-12-21.

SUBSTRATE PROCESSING APPARATUS, ARTICLE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, MANAGEMENT APPARATUS, AND STORAGE MEDIUM

Номер патента: US20200333718A1. Автор: Takiguchi Takahiro,Koga Shinichiro. Владелец: . Дата публикации: 2020-10-22.

Dual-gate CMOS semiconductor device and dual-gate CMOS semiconductor device manufacturing method

Номер патента: US20030203561A1. Автор: Hiroyuki Tanaka. Владелец: Individual. Дата публикации: 2003-10-30.

Dual-gate CMOS semiconductor device and dual-gate CMOS semiconductor device manufacturing method

Номер патента: US20020027252A1. Автор: Hiroyuki Tanaka. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2002-03-07.

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Номер патента: US20220149093A1. Автор: Kudoh Yoshiharu,Kataoka Toyotaka,KIMIZUKA Naohiko. Владелец: SONY SEMICONDUCTOR SOLUTIONS CORPORATION. Дата публикации: 2022-05-12.

SUBSTRATE CARTRIDGE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, CONTROL APPARATUS, AND METHOD OF MANUFACTURING DISPLAY ELEMENT

Номер патента: US20140290041A1. Автор: KIUCHI Tohru. Владелец: . Дата публикации: 2014-10-02.

Substrate cartridge, substrate processing apparatus, substrate processing system, control apparatus, and method of manufacturing display element

Номер патента: TW201131855A. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2011-09-16.

Substrate cartridge, substrate processing apparatus, substrate processing system, control apparatus, and method of manufacturing display element

Номер патента: US20110085841A1. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2011-04-14.

Circuit board, semiconductor device, circuit board manufacturing method, and semiconductor device manufacturing method

Номер патента: JP4832369B2. Автор: 信幸林,佳彦今中. Владелец: Fujitsu Ltd. Дата публикации: 2011-12-07.

Laminated structure, semiconductor device, laminated structure manufacturing method, and semiconductor device manufacturing method

Номер патента: JP2009272437A. Автор: 幸栄鈴木,隆徳田野,敦小野寺,Yukie Suzuki,Atsushi Onodera,Takanori Tano. Владелец: Ricoh Co Ltd. Дата публикации: 2009-11-19.

Substrate temperature measuring method, substrate processing, substrate temperature measuring equipment and semiconductor manufacturing equipment

Номер патента: TW483034B. Автор: Chishio Koshimizu. Владелец: Tokyo Electron Ltd. Дата публикации: 2002-04-11.

Pasted soi substrate, process for producing the same and semiconductor device

Номер патента: EP1555690A1. Автор: Naoshi SUMITOMO MITSUBISHI SILICON CORP. ADACHI,Masahiko c/o SUMITOMO MITSUBISHI SILICON NAKAMAE. Владелец: Sumitomo Mitsubishi Silicon Corp. Дата публикации: 2005-07-20.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US20170200644A1. Автор: Wei Feng,Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2017-07-13.

Semiconductor device and manufacturing method therefor

Номер патента: US20200020806A1. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-01-16.

Semiconductor memory cell and semiconductor component as well as manufacturing methods therefore

Номер патента: US20030099131A1. Автор: Franz Hofmann,Till Schloesser. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-05-29.

Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device

Номер патента: US20230411320A1. Автор: Tadashi Yamaguchi. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US9984956B2. Автор: Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Fumiki Kato,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2018-05-29.

Epitaxial structure of semiconductor device and manufacturing method thereof, and semiconductor device

Номер патента: US20240178312A1. Автор: HUI Zhang,Shigiang LI. Владелец: Dynax Semiconductor Inc. Дата публикации: 2024-05-30.

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

Номер патента: US20160322282A1. Автор: Katsuya Kikuchi,Naoya Watanabe,Masahiro Aoyagi,Fumiki Kato,Tung Thanh BUI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2016-11-03.

Semiconductor device and manufacturing method thereof

Номер патента: US20230207691A1. Автор: Guangtao Han. Владелец: Joulwatt Technology Co Ltd. Дата публикации: 2023-06-29.

Substrate processing system, inspection apparatus and inspection method

Номер патента: TW200949237A. Автор: Kazutaka Taniguchi,Akio Sanda,Kichiji Azai. Владелец: Dainippon Screen Mfg. Дата публикации: 2009-12-01.

Semiconductor device and manufacturing method thereof

Номер патента: US11901447B2. Автор: Guangtao Han. Владелец: Joulwatt Technology Co Ltd. Дата публикации: 2024-02-13.

Jig, apparatus and method for inspecting semiconductor chip, and manufacturing method of semiconductor device

Номер патента: TW201013832A. Автор: Nobuhiro Sawa. Владелец: NEC Electronics Corp. Дата публикации: 2010-04-01.

Memory device, semiconductor device and method for manufacturing the same

Номер патента: US20210183820A1. Автор: Chih-Wei Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-06-17.

Semiconductor device and preparation method therefor

Номер патента: EP4383340A1. Автор: MEI Yuan,Liang Song,Qiang Zhang,Lin Luo,Yanan Wang,Yongshun LI,Huajun JIN. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2024-06-12.

Semiconductor device and manufacturing method thereof

Номер патента: US09899405B2. Автор: Yong Min Yoo,Young Jae Kim,Seung Woo Choi. Владелец: ASM IP Holding BV. Дата публикации: 2018-02-20.

Semiconductor device tape carrier, manufacturing method for semiconductor device, semiconductor device, and semiconductor module device

Номер патента: TW200828467A. Автор: Kenji Toyosawa,Toshiharu Seko. Владелец: Sharp Kk. Дата публикации: 2008-07-01.

Semiconductor device and manufacturing method thereof

Номер патента: US20240234637A1. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Anodic aluminum oxide film-based interposer for electrical connection and manufacturing method therefor, semiconductor package and manufacturing method therefor, multi-stacked semiconductor device and manufacturing method therefor, display and manufacturing method therefor

Номер патента: US20240112968A1. Автор: Seung Ho Park,Bum Mo Ahn,Sung Hyun BYUN. Владелец: Point Engineering Co Ltd. Дата публикации: 2024-04-04.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US11728408B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-08-15.

Semiconductor device with multi-layer dielectric and methods of forming the same

Номер патента: US12057398B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US20230282743A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-09-07.

Semiconductor Devices and Methods

Номер патента: US20230299159A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Guan-Lin Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Semiconductor device and manufacturing method therefor

Номер патента: US20200006372A1. Автор: Feng Ji,Haoyu Chen,Qiwei Wang,Jinshuang Zhang. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2020-01-02.

Memory device, semiconductor device and manufacturing method of the memory device

Номер патента: US20210398989A1. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-23.

Semiconductor device and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US12046672B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-07-23.

Manufacturing method of semiconductor device

Номер патента: US20160027651A1. Автор: Kentaro Saito,Yoshiyuki Kawashima,Hiraku Chakihara. Владелец: Renesas Electronics Corp. Дата публикации: 2016-01-28.

Semiconductor device and preparation method therefor

Номер патента: US20240304720A1. Автор: MEI Yuan,Liang Song,Qiang Zhang,Lin Luo,Yanan Wang,Yongshun LI,Huajun JIN. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2024-09-12.

Semiconductor device and manufacturing method thereof

Номер патента: US09679901B1. Автор: Chin-Lung Lin,Shih-Fang Tzou,Le-Tien Jung,Ying-Chiao Wang,Chien-Ting Ho,Harn-Jiunn Wang. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2017-06-13.

Semiconductor device and manufacturing method thereof

Номер патента: US09508620B2. Автор: Shunpei Yamazaki,Junya Maruyama,Toru Takayama,Yumiko Ohno. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-29.

Semiconductor device and manufacturing method and operating method for the same

Номер патента: US09450048B2. Автор: Cheng-Chi Lin,Ching-Lin Chan,Shih-Chin Lien,Chen-Yuan Lin. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-20.

Substrate processing method and apparatus, and fabrication process of a semiconductor device

Номер патента: KR20070096973A. Автор: 요시히로 나카타,겐지 이시카와,히데노리 미요시,유키오 다키가와,히데키 다테이시. Владелец: 후지쯔 가부시키가이샤. Дата публикации: 2007-10-02.

Substrate processing method and apparatus, and fabrication process of a semiconductor device

Номер патента: KR100847917B1. Автор: 요시히로 나카타,겐지 이시카와,히데노리 미요시,유키오 다키가와,히데키 다테이시. Владелец: 후지쯔 가부시키가이샤. Дата публикации: 2008-07-22.

LC element manufacturing method

Номер патента: US5846845A. Автор: Takeshi Ikeda,Akira Okamoto,Tsutomu Nakanishi. Владелец: TIF Co Ltd. Дата публикации: 1998-12-08.

Semiconductor device and manufacturing method of forming the same

Номер патента: US20240234405A9. Автор: Seungchul Lee,Yijyun Ke. Владелец: PanJit International Inc. Дата публикации: 2024-07-11.

Semiconductor device and preparation method therefor, and power amplification circuit and electronic device

Номер патента: EP4394890A1. Автор: Tao Liu,Ming Lu,Haijun Li,Zhili Zhang,Jin Rao,Shuiming LI. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-07-03.

Semiconductor device and method of manufacturing semiconductor device

Номер патента: GB2589484A. Автор: Nakamura Keisuke,YAGYU Eiji,YOSHITSUGU Koji. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-06-02.

Semiconductor device and manufacturing method therefor

Номер патента: US20180097082A1. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-04-05.

Power semiconductor device and manufacturing method thereof

Номер патента: US20240243176A1. Автор: Han Seok KO,Dae Il Kim,Ji Houn Jung,Ung Bi Son. Владелец: DB HiTek Co Ltd. Дата публикации: 2024-07-18.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US12068413B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-08-20.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230301091A1. Автор: SUNG Wook Jung,Ji Hui Baek,Jang Hee Jung. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Semiconductor device and manufacturing method therefor

Номер патента: EP4228007A1. Автор: Tao Liu,Wei Lu,Haijun Li,Juncai Ma,Zhili Zhang,Cen TANG,Jin Rao,Lingcong LE. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2023-08-16.

Semiconductor device and manufacturing method thereof and electronic apparatus including the same

Номер патента: US20210351297A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2021-11-11.

Semiconductor device and manufacturing method thereof

Номер патента: US20240276706A1. Автор: Hung-Yu Wei. Владелец: Winbond Electronics Corp. Дата публикации: 2024-08-15.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US12102021B2. Автор: HE Qian,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2024-09-24.

Semiconductor device and manufacturing method thereof

Номер патента: US20160247814A1. Автор: Erh-Kun Lai,Kuang-Hao Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2016-08-25.

High-threshold power semiconductor device and manufacturing method thereof

Номер патента: US12107167B2. Автор: Shen Li,Chen Ge,Chi Zhang,Longxing Shi,Weifeng Sun,Siyang Liu,Shuxuan XIN,Le QIAN. Владелец: SOUTHEAST UNIVERSITY. Дата публикации: 2024-10-01.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US12096703B2. Автор: Qi Xiang,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2024-09-17.

Memory device and manufacturing method the same

Номер патента: US09786669B2. Автор: Shunpei Yamazaki,Ryoji Nomura,Masayuki Sakakura,Tamae Takano,Yoshinobu Asami. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-10-10.

Semiconductor device and manufacturing method thereof

Номер патента: US09704747B2. Автор: Ji Yeon Ryu,Byong Jin Kim,Jae Beum Shim. Владелец: Amkor Technology Inc. Дата публикации: 2017-07-11.

Semiconductor device and manufacturing method thereof

Номер патента: US09576972B2. Автор: Erh-Kun Lai,Kuang-Hao Chiang. Владелец: Macronix International Co Ltd. Дата публикации: 2017-02-21.

Split gate memory device, semiconductor device and forming method thereof

Номер патента: US09536889B2. Автор: Lingyue Zhang. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Дата публикации: 2017-01-03.

Semiconductor device and manufacturing method thereof

Номер патента: US09437611B1. Автор: Erh-Kun Lai. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20180248022A1. Автор: Tianchun Ye. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2018-08-30.

Semiconductor device and the method of manufacturing the same

Номер патента: US20200075594A1. Автор: Richard R. Chang,Deyuan Xiao. Владелец: SiEn Qingdao Integrated Circuits Co Ltd. Дата публикации: 2020-03-05.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230301096A1. Автор: Sang Soo Kim,Kun Young Lee,Nam Kuk KIM,Sang Wan JIN. Владелец: SK hynix Inc. Дата публикации: 2023-09-21.

Semiconductor device and manufacturing method thereof

Номер патента: US20230187513A1. Автор: Chen-Shuo Huang. Владелец: AUO Corp. Дата публикации: 2023-06-15.

Semiconductor Device and Manufacturing Method thereof

Номер патента: US20130082362A1. Автор: Huaxiang Yin,Qiuxia Xu,Dapeng Chen. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2013-04-04.

Semiconductor device with polymer liner and method for fabricating the same

Номер патента: US20240234249A1. Автор: Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

Semiconductor device with polymer liner and method for fabricating the same

Номер патента: US20240234252A1. Автор: Shing-Yih Shih. Владелец: Nanya Technology Corp. Дата публикации: 2024-07-11.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20190288000A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2019-09-19.

Wafer-level semiconductor device and manufacturing method thereof

Номер патента: US09780276B2. Автор: Yibin Zhang,Fei Xu,Yong Cai. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2017-10-03.

Semiconductor device and manufacturing method thereof

Номер патента: US09680033B2. Автор: Shoji Kitamura. Владелец: Fuji Electric Co Ltd. Дата публикации: 2017-06-13.

Substrate structure, semiconductor device, and method for manufacturing the same

Номер патента: US09607877B2. Автор: Huicai Zhong,Qingqing Liang. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-03-28.

Wiring board, semiconductor package, semiconductor device, wiring board manufacturing method, and semiconductor package manufacturing method

Номер патента: JP6584939B2. Автор: 清水　規良,規良清水,渉金田. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2019-10-02.

Wafer and method of making, and semiconductor device

Номер патента: US20230215815A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-06.

Wafer and method of making, and semiconductor device

Номер патента: US20230230936A1. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-07-20.

Semiconductor device and manufacture thereof

Номер патента: US20180265352A1. Автор: Guangcai Fu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-09-20.

Semiconductor device and manufacture thereof

Номер патента: US10351421B2. Автор: Guangcai Fu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-07-16.

Semiconductor device manufacturing method including doping from a diffused layer

Номер патента: US10573752B2. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-02-25.

Semiconductor device and manufacturing method thereof, memory and memory system

Номер патента: US20240194607A1. Автор: Wei Xu,BIN Yuan,Zongke Xu,Zongliang Huo,Lei Xue,Yali Guo,Qiangwei Zhang. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-06-13.

Semiconductor device and manufacturing method thereof

Номер патента: US20240204101A1. Автор: Gang Wu,Shiwei HE,Hsien-Shih Chu,Junkun CHEN,Guoguo Kong,Mingru Ge. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-06-20.

Semiconductor device and manufacture thereof

Номер патента: US20180152801A1. Автор: Yu Hua,Chao Wang,Yijun Chen,Shan ZHANG,Kuanchieh YU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-31.

Semiconductor device and manufacturing method thereof

Номер патента: US20220069123A1. Автор: Chen-Yi Lee,Yi-Cheng CHIU,Sheng-Fu Hsu,Chiu-Hua Chung,Tien-Sheng Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-03.

Semiconductor device and manufacturing method thereof

Номер патента: WO2024124388A1. Автор: Ke SHEN,Huaifeng Wang,Jiajie CUI,Meiyan Lin. Владелец: Innoscience (Zhuhai) Technology Co., Ltd.. Дата публикации: 2024-06-20.

Semiconductor device and method for manufacturing the same

Номер патента: US20190043977A1. Автор: Yi Pei,Chenggong YIN. Владелец: Dynax Semiconductor Inc. Дата публикации: 2019-02-07.

Semiconductor device with multi-layer dielectric

Номер патента: US12040273B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor device and manufacturing method thereof

Номер патента: US20200259082A1. Автор: Tianhui Li,Qiang Ma,Yanlei Ping. Владелец: SiEn Qingdao Integrated Circuits Co Ltd. Дата публикации: 2020-08-13.

Semiconductor device and manufacturing method thereof

Номер патента: US11011703B2. Автор: Tianhui Li,Qiang Ma,Yanlei Ping. Владелец: SiEn Qingdao Integrated Circuits Co Ltd. Дата публикации: 2021-05-18.

Semiconductor device and manufacturing method thereof

Номер патента: US20240186308A1. Автор: Ching-Hua Hsieh,Ming-Yu Yen,Hung-Chih Chen,Chin-Wei Liang,Kai-Fung Chang,Sheng-Feng Weng,Yi-Yang Lei,Hung-Chou LIAO,Cheyu LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-06.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US20220393005A1. Автор: Wen-Jung Liao,Chih Tung Yeh. Владелец: United Microelectronics Corp. Дата публикации: 2022-12-08.

Semiconductor devices and methods of manufacturing the same

Номер патента: US20220223713A1. Автор: Satoru Yamada,Honglae PARK,Chunhyung Chung,Junsoo Kim,Naoto Umezawa. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-14.

Semiconductor device and manufacturing method, and electronic apparatus

Номер патента: US20160225722A1. Автор: Takayoshi Honda. Владелец: Sony Corp. Дата публикации: 2016-08-04.

Semiconductor device with backside self-aligned power rail and methods of forming the same

Номер патента: US20240250141A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor device with funnel shape spacer and methods of forming the same

Номер патента: US12051628B2. Автор: Yen-Ming Chen,Yen-Ting Chen,Wei-Yang Lee,Fu-Kai Yang,Cheng-Yu Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Semiconductor device and manufacturing method thereof

Номер патента: US20240250133A1. Автор: Hai-Ching Chen,Chung-Te Lin,Yu-Ming Lin,Kai-Wen Cheng,Chi-Min Chen,Yin-Hao Wu,Wu-Wei Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Semiconductor device and manufacturing method thereof

Номер патента: US20220077289A1. Автор: Cheng Yeh HSU,Qu LUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-03-10.

Semiconductor device and manufacturing method thereof

Номер патента: US8436420B2. Автор: Kyu Hyun Mo. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2013-05-07.

Semiconductor Device and Fabricating Method Thereof

Номер патента: US20220246750A1. Автор: Po-Yu YANG,Hsun-Wen Wang. Владелец: United Microelectronics Corp. Дата публикации: 2022-08-04.

Semiconductor Device Active Region Profile and Method of Forming the Same

Номер патента: US20230117516A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-20.

Semiconductor device and manufacturing method of the same

Номер патента: US20150060958A1. Автор: Erh-Kun Lai,Shih-Hung Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2015-03-05.

Semiconductor device and manufacturing method of the same

Номер патента: US20210183874A1. Автор: Yao-Ting Tsai,Hsin-Huang Shen,Yu-Shu Cheng. Владелец: Winbond Electronics Corp. Дата публикации: 2021-06-17.

Semiconductor substrate, semiconductor device and manufacturing method of semiconductor substrate

Номер патента: US20160315220A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2016-10-27.

Semiconductor Device and Manufacturing Method Thereof

Номер патента: US20110168983A1. Автор: Kyu Hyun Mo. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-07-14.

Semiconductor devices and methods of manufacturing the same

Номер патента: US20210134975A1. Автор: Satoru Yamada,Honglae PARK,Chunhyung Chung,Junsoo Kim,Naoto Umezawa. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-05-06.

Manufacturing method of semiconductor device

Номер патента: US10347644B2. Автор: Chieh-Te Chen,Feng-Yi Chang,Fu-Che Lee. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-07-09.

Manufacturing method of semiconductor device

Номер патента: US20190341385A1. Автор: Li-Wei Feng,Chien-Ting Ho,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-11-07.

Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof, and electronic apparatus

Номер патента: US20220302305A1. Автор: Nailong He. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2022-09-22.

Vertical semiconductor device and manufacturing method thereof

Номер патента: US20160380093A1. Автор: Chien-Wei Chiu,Tsung-Yi Huang. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2016-12-29.

Manufacturing method of semiconductor device

Номер патента: US12062696B2. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Yi-Tse Hung,Ang-Sheng Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Substrate sheet material for a semiconductor device and a manufacturing method thereof, a molding method using a substrate sheet material, a manufacturing method of semiconductor devices

Номер патента: TWI264782B. Автор: Toru Nishino,Noboru Hayasaka,Kouichi Meguro. Владелец: Fujitsu Ltd. Дата публикации: 2006-10-21.

Semiconductor device and manufacturing method thereof

Номер патента: US9620649B1. Автор: Shao-Hui Wu,Chi-Fa Ku,Chen-Bin Lin,Zhi-Biao Zhou,hai-biao Yao. Владелец: United Microelectronics Corp. Дата публикации: 2017-04-11.

Semiconductor device and manufacture thereof

Номер патента: US20200145771A1. Автор: Yu Hua,Chao Wang,Yijun Chen,Shan ZHANG,Kuanchieh YU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-05-07.

Three-dimensional semiconductor device and manufacturing method thereof

Номер патента: US9711525B2. Автор: Min Sik Jang. Владелец: SK hynix Inc. Дата публикации: 2017-07-18.

Semiconductor device and manufacturing method thereof

Номер патента: US20190326441A1. Автор: Guo Bin Yu,Xiao Ping Xu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-10-24.

Semiconductor device and manufacturing method thereof

Номер патента: US11069821B2. Автор: Guo Bin Yu,Xiao Ping Xu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-07-20.

A semiconductor device and manufacturing method thereof

Номер патента: US20180145182A1. Автор: Guo Bin Yu,Xiao Ping Xu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-24.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US20240243084A1. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2024-07-18.

Semiconductor device with air gaps between metal gates and method of forming the same

Номер патента: US12100625B2. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Semiconductor device with gate recess and methods of forming the same

Номер патента: US20240306360A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-12.

Semiconductor device and manufacturing method thereof

Номер патента: US20180197865A1. Автор: Li-Wei Feng,Chien-Ting Ho,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2018-07-12.

Semiconductor device and manufacturing method thereof

Номер патента: US20240322024A1. Автор: Tsung-Han Tsai,Chun-Sheng Liang,Ta-Chun Lin,Pin Chun Shen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Semiconductor device and manufacturing method thereof

Номер патента: US7504698B2. Автор: Tetsuya Taguwa. Владелец: Elpida Memory Inc. Дата публикации: 2009-03-17.

WAFER LEVEL PACKAGED GaN POWER DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20130309811A1. Автор: JU Chull Won. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2013-11-21.

Semiconductor device having capacitor and manufacturing method thereof

Номер патента: US12087809B2. Автор: Wei Cheng Wu,Meng-Han LIN,Te-An Chen,Te-Hsin Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Semiconductor device having capacitor and manufacturing method thereof

Номер патента: US20240347579A1. Автор: Wei Cheng Wu,Meng-Han LIN,Te-An Chen,Te-Hsin Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-17.

Semiconductor device and method of manufacturing the same

Номер патента: US20240355936A1. Автор: Boon Keat Toh,Chi REN,Chih-Hsin Chang,Szu Han Wu. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-24.

Semiconductor device active region profile and method of forming the same

Номер патента: US20240339541A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Semiconductor device with funnel shape spacer and methods of forming the same

Номер патента: US20240363426A1. Автор: Yen-Ming Chen,Yen-Ting Chen,Wei-Yang Lee,Fu-Kai Yang,Cheng-Yu Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device and manufacturing method thereof

Номер патента: US12132012B2. Автор: Hsin-Pin Huang,Nianwang YANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-29.

Semiconductor device with tunable epitaxy structures and method of forming the same

Номер патента: US12112989B2. Автор: Chih-Hsiang Huang,Shih-Hao Lin,Hsin-Wen Su,Tzu-Hsiang HSU,Szu-Chi Yang,Chong-De LIEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-08.

Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof

Номер патента: US10431587B2. Автор: Li-Wei Feng,Chien-Ting Ho,Tzu-Tsen Liu. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2019-10-01.

Semiconductor device and manufacturing method thereof

Номер патента: US09922865B2. Автор: Hyun Tae Jung,Jeong Gyu PARK,Woo Sig Min,Meng An Jung,Gil Ho LEE,Hyung Suk Choi,Da Soon Lee,Pil Seung Kang. Владелец: MagnaChip Semiconductor Ltd. Дата публикации: 2018-03-20.

Semiconductor device with reduced leakage current and fabricating method thereof

Номер патента: US09893107B2. Автор: Hsin-Chi Chen,Chia-Yu WEI,Chin-Hsun Hsiao,Yen-Liang Lin,Yung-Lung Hsu,Ssu-Chiang Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-13.

Semiconductor device and manufacturing method, and electronic apparatus

Номер патента: US09871000B2. Автор: Takayoshi Honda. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2018-01-16.

Vertical semiconductor device and manufacturing method thereof

Номер патента: US09786776B2. Автор: Chien-Wei Chiu,Tsung-Yi Huang. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2017-10-10.

Manufacturing method of semiconductor device

Номер патента: US09748360B2. Автор: Takuya Hagiwara,Tetsuro Hanawa. Владелец: Renesas Electronics Corp. Дата публикации: 2017-08-29.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US09748154B1. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Inc. Дата публикации: 2017-08-29.

Three-dimensional semiconductor device and manufacturing method thereof

Номер патента: US09711525B2. Автор: Min Sik Jang. Владелец: SK hynix Inc. Дата публикации: 2017-07-18.

Manufacturing method of semiconductor device

Номер патента: US09666473B2. Автор: Ching-Hung Kao. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-30.

Semiconductor device and manufacturing method thereof

Номер патента: US09633944B2. Автор: Hae Soo Kim. Владелец: SK hynix Inc. Дата публикации: 2017-04-25.

Semiconductor device and manufacturing method thereof

Номер патента: US09620649B1. Автор: Shao-Hui Wu,Chi-Fa Ku,Chen-Bin Lin,Zhi-Biao Zhou,hai-biao Yao. Владелец: United Microelectronics Corp. Дата публикации: 2017-04-11.

Semiconductor device and manufacturing method thereof

Номер патента: US09524906B1. Автор: Glenn A. Rinne,Jong Sik Paek,Won Chul Do,Eun Sook Sohn,In Bae Park. Владелец: Amkor Technology Inc. Дата публикации: 2016-12-20.

Semiconductor device and manufacturing method thereof

Номер патента: US09466678B2. Автор: Che-Wei Chang,Shih-Hsien Huang,Chih-Chieh Yeh,Tzu-I Tsai. Владелец: United Microelectronics Corp. Дата публикации: 2016-10-11.

Semiconductor device and manufacturing method of the same

Номер патента: US09406710B2. Автор: Ching-Hung Kao. Владелец: United Microelectronics Corp. Дата публикации: 2016-08-02.

Substrate processing method and fabrication process of a semiconductor device

Номер патента: US7332426B2. Автор: Tadahiro Ishizaka,Masamichi Hara,Taro Ikeda. Владелец: Tokyo Electron Ltd. Дата публикации: 2008-02-19.

Semiconductor chip, semiconductor wafer and semiconductor device and its manufacturing method

Номер патента: CN1518105A. Автор: ��һ,原一巳. Владелец: Seiko Epson Corp. Дата публикации: 2004-08-04.

Semiconductor device and manufacturing method thereof

Номер патента: US20050116272A1. Автор: Takashi Nishida,Masahito Hiroshima. Владелец: Elpida Memory Inc. Дата публикации: 2005-06-02.

Semiconductor device and manufacturing process for the same

Номер патента: US20240128339A1. Автор: Le Li,Jun Zhou,Guangjie XUE. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2024-04-18.

Semiconductor device and manufacturing method thereof

Номер патента: US20070172746A1. Автор: Takashi Nishida,Masahito Hiroshima. Владелец: Elpida Memory Inc. Дата публикации: 2007-07-26.

Semiconductor device and manufacturing method thereof

Номер патента: US7208788B2. Автор: Takashi Nishida,Masahito Hiroshima. Владелец: Elpida Memory Inc. Дата публикации: 2007-04-24.

Semiconductor device and its manufacturing method, electronic device and its manufacturing method

Номер патента: TWI275170B. Автор: Toshiaki Morita,Kenichi Yamamoto,Ryosuke Kimoto,Munehiro Yamada. Владелец: Hitachi Ulsi Sys Co Ltd. Дата публикации: 2007-03-01.

Semiconductor device and manufacture thereof

Номер патента: US10453968B2. Автор: Hai Yang Zhang,Erhu ZHENG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-10-22.

Semiconductor device and manufacture thereof

Номер патента: US20180151696A1. Автор: Yang Liu,Yongmeng Lee,Shaofeng Yu,Jianhua Ju,Zhaoxu Shen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-31.

Semiconductor device and manufacturing method therefor

Номер патента: US09553060B2. Автор: Kazuyuki Omori. Владелец: Renesas Electronics Corp. Дата публикации: 2017-01-24.

Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid

Номер патента: US8040489B2. Автор: Katsushi Nakano,Masahiko Okumura,Tomoharu Fujiwara,Tarou Sugihara,Takeyuki Mizutani. Владелец: Nikon Corp. Дата публикации: 2011-10-18.

Semiconductor element, semiconductor device, semiconductor element manufacturing method, semiconductor device manufacturing method, and electronic device

Номер патента: JP3801160B2. Автор: 貴幸近藤. Владелец: Seiko Epson Corp. Дата публикации: 2006-07-26.

Semiconductor thin film and its manufacturing method, and semiconductor device and its manufacturing method

Номер патента: KR970063764A. Автор: 아키하루 미야나가,준 고야마,순페이 야마자끼,타케시 후쿠나가. Владелец: 순페이 야마자끼. Дата публикации: 1997-09-12.

Semiconductor element and its manufacturing method, and semiconductor device and its manufacturing method

Номер патента: JP2003234367A. Автор: Tomohiro Nishiyama,知宏西山,雅基田子,Masaki Tago. Владелец: NEC Corp. Дата публикации: 2003-08-22.

Trench filling method and semiconductor integrated circuit device manufacturing method

Номер патента: JP5977002B2. Автор: 将久渡邊. Владелец: Tokyo Electron Ltd. Дата публикации: 2016-08-24.

Semiconductor crystal plate and its manufacturing method and semiconductor device and its manufacturing method

Номер патента: CN1260804C. Автор: 江头克. Владелец: Toshiba Corp. Дата публикации: 2006-06-21.

Semiconductor substrate and manufacturing method thereof, and semiconductor device structure and manufacturing method thereof

Номер патента: CN114446936A. Автор: 黄河,汪新学,王敬平,徐海瑛. Владелец: Smic Ningbo Co ltd Shanghai Branch. Дата публикации: 2022-05-06.

Package and semiconductor device for semiconductor device and their manufacturing method

Номер патента: KR100271676B1. Автор: 야수하루 나까무라,아끼요시 나까무라. Владелец: 모기 쥰이찌. Дата публикации: 2001-01-15.

Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method

Номер патента: US20080224215A1. Автор: Takeshi Fukunaga,Shunpei Yamazaki,Jun Koyama,Akiharu Miyanaga. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2008-09-18.

SOI lateral homogenization field high voltage power semiconductor device, manufacturing method and application thereof

Номер патента: US11888022B2. Автор: Bo Zhang,Ke Zhang,Ming Qiao,Ning Tang,Zhaoji Li,Nailong He,Wentong Zhang. Владелец: University of Electronic Science and Technology of China. Дата публикации: 2024-01-30.

Semiconductor device and the manufacturing method thereof, and semiconductor wafer

Номер патента: TW200423315A. Автор: Haruki Ito. Владелец: Seiko Epson Corp. Дата публикации: 2004-11-01.

Semiconductor device with stepped source structure

Номер патента: US11765896B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-09-19.

Power semiconductor device

Номер патента: EP2546879A3. Автор: Seung Bae HUR,Ki Se Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-12-11.

Semiconductor device

Номер патента: US20240363688A1. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Yi-Tse Hung,Ang-Sheng Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Vertical semiconductor device having a non-conductive substrate and a gallium nitride layer

Номер патента: US09466552B2. Автор: Chien-Wei Chiu,Tsung-Yi Huang. Владелец: RICHTEK TECHNOLOGY CORP. Дата публикации: 2016-10-11.

MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE

Номер патента: US20150013907A1. Автор: SENDA Takahiro,Iwao Toshihiko,Fujii Toru. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2015-01-15.

MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE

Номер патента: US20150013911A1. Автор: Iwao Toshihiko,KANEKO Kazushi. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2015-01-15.

MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE

Номер патента: US20150013912A1. Автор: Iwao Toshihiko,Fujii Toru. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2015-01-15.

Semiconductor device and its manufacturing method, a circuit board and an electronic device

Номер патента: US20030218260A1. Автор: Jun Taniguchi. Владелец: Seiko Epson Corp. Дата публикации: 2003-11-27.

Substrate processing method, exposure apparatus and method for manufacturing device

Номер патента: KR101236120B1. Автор: 도모하루 후지와라,가츠시 나카노,마사히코 오쿠무라,다케유키 미즈타니,다로우 스기하라. Владелец: 가부시키가이샤 니콘. Дата публикации: 2013-02-28.

Substrate processing method, exposure apparatus and method for manufacturing device

Номер патента: KR101285951B1. Автор: 도모하루 후지와라,가츠시 나카노,마사히코 오쿠무라,다케유키 미즈타니,다로우 스기하라. Владелец: 가부시키가이샤 니콘. Дата публикации: 2013-07-12.

Substrate processing system, management apparatus, and display method

Номер патента: JP6204344B2. Автор: 一良山本. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2017-09-27.

An exposure apparatus and an exposure method, and an element manufacturing method

Номер патента: TWI435048B. Автор: 柴崎祐一. Владелец: 尼康股份有限公司. Дата публикации: 2014-04-21.

Manufacturing method for semiconductor device carrier and manufacturing method for semiconductor package using the same

Номер патента: TW201209983A. Автор: Hwee-Seng Jimmy Chew,Shoa-Siong Raymond Lim,Kian-Hock Lim,Oviso Dominador Fortaleza Jr. Владелец: ADVANPACK SOLUTIONS PTE LTD. Дата публикации: 2012-03-01.

Manufacturing method for semiconductor device carrier and manufacturing method for semiconductor package using the same

Номер патента: US20120058604A1. Автор: Hwee-Seng Jimmy Chew,Shoa-Siong Raymond Lim,Kian-Hock Lim,Oviso Dominador Fortaleza, JR.. Владелец: ADVANPACK SOLUTIONS PTE LTD. Дата публикации: 2012-03-08.

Semiconductor manufacturing method including forming additional active layer

Номер патента: US20040185609A1. Автор: Shuichi Ueno,Haruo Furuta,Yoshinori Okumura. Владелец: Renesas Technology Corp. Дата публикации: 2004-09-23.

Lead frame and its manufacturing method, and semiconductor device and its manufacturing method

Номер патента: JP7145414B2. Автор: 一範大内,昌博永田. Владелец: DAI NIPPON PRINTING CO LTD. Дата публикации: 2022-10-03.

SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND MANUFACTURING METHODS THEREOF

Номер патента: US20160197236A1. Автор: HATTA Yoshihisa,Dai Kotaro,Shinotsuka Kei,Kajita Yasuhito. Владелец: . Дата публикации: 2016-07-07.

Substrate for semiconductor light emitting device and semiconductor light emitting device, and manufacturing methods thereof

Номер патента: US20150221824A1. Автор: Kei Shinotsuka,Kotaro Dai,Yoshihisa Hatta,Yasuhito KAJITA. Владелец: Oji Holdings Corp. Дата публикации: 2015-08-06.

SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND MANUFACTURING METHODS THEREOF

Номер патента: US20170309784A1. Автор: HATTA Yoshihisa,Dai Kotaro,Shinotsuka Kei,Kajita Yasuhito. Владелец: . Дата публикации: 2017-10-26.

Immersion exposure apparatus and immersion exposure method, and device manufacturing method

Номер патента: US7872730B2. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2011-01-18.

Immersion exposure apparatus and immersion exposure method, and device manufacturing method

Номер патента: US8743341B2. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2014-06-03.

Image data processing apparatus and method for defect inspection, defect inspection apparatus and method using them, plate-like body manufacturing method using them, and recording medium

Номер патента: JP5263291B2. Автор: 信楜澤. Владелец: Asahi Glass Co Ltd. Дата публикации: 2013-08-14.

Insulation gate type semiconductor device and its manufacturing method

Номер патента: TW200707745A. Автор: Tetsuya Okada,Makoto Oikawa,Kazunari Kushiyama. Владелец: Sanyo Electric Co. Дата публикации: 2007-02-16.

Semiconductor device and its manufacture method

Номер патента: TW498522B. Автор: Ikuo Yoshida,Hiroshi Kikuchi,Toshihiko Sato,Tomo Shimizu,Hideko Ando. Владелец: HITACHI LTD. Дата публикации: 2002-08-11.

Semiconductor device and the manufacturing method of the same

Номер патента: TW586156B. Автор: Mutsumi Okajima. Владелец: Toshiba Corp. Дата публикации: 2004-05-01.

Semiconductor device and its manufacturing method

Номер патента: TW200931665A. Автор: Tomomitsu Risaki. Владелец: Seiko Instr Inc. Дата публикации: 2009-07-16.

Semiconductor device and its manufacturing method

Номер патента: TW461089B. Автор: Takashi Miyato. Владелец: Mitsubishi Electric Corp. Дата публикации: 2001-10-21.

Organic semiconductor device and its manufacturing method

Номер патента: AU2003261715A1. Автор: Kenji Nakamura,Satoru Ohta. Владелец: Pioneer Corp. Дата публикации: 2004-03-19.

Semiconductor device and its manufacture method

Номер патента: TW200514259A. Автор: Shigeyuki Sugihara. Владелец: Sanyo Electric Co. Дата публикации: 2005-04-16.

A semiconductor device and the manufacturing method of the same

Номер патента: TW201613089A. Автор: Heng-Kuang Lin,Ya-Yu YANG. Владелец: Epistar Corp. Дата публикации: 2016-04-01.

Semiconductor device and its manufacturing method

Номер патента: TW399336B. Автор: Yukio Maki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2000-07-21.

Semiconductor device and its manufacturing method

Номер патента: TW465077B. Автор: Tomohiro Saito,Toshihiko Iinuma,Junji Yagishita. Владелец: Toshiba Corp. Дата публикации: 2001-11-21.

Semiconductor device and its manufacture method

Номер патента: TWI260783B. Автор: Shigeyuki Sugihara. Владелец: Sanyo Electric Co. Дата публикации: 2006-08-21.

The semiconductor device and its manufacturing method

Номер патента: TW326558B. Автор: Toshio Miyamoto,Kunihiro Tsubosaki. Владелец: HITACHI LTD. Дата публикации: 1998-02-11.

Semiconductor device and its manufacture method

Номер патента: TW498549B. Автор: Akira Asai,Teruhito Ohnishi. Владелец: Matsushita Electric Ind Co Ltd. Дата публикации: 2002-08-11.

Semiconductor device packages and manufacturing method thereof

Номер патента: TWI376779B. Автор: Seokbong Kim,Yeonsun Yun,Yuyong Lee. Владелец: Advanced Semiconductor Eng. Дата публикации: 2012-11-11.

Semiconductor devices and the manufacturing method

Номер патента: TW552562B. Автор: Mitsuo Usami. Владелец: HITACHI LTD. Дата публикации: 2003-09-11.

Semiconductor device and the manufacturing method thereof

Номер патента: TWI238441B. Автор: Katsuhiko Hieda. Владелец: Toshiba Corp. Дата публикации: 2005-08-21.

Semiconductor device and the manufacturing method thereof

Номер патента: TW449818B. Автор: Shoji Seta. Владелец: Toshiba Corp. Дата публикации: 2001-08-11.

Semiconductor device and its manufacturing method

Номер патента: TWI604592B. Автор: Tsutomu Shirakawa,Kenya Sano,Takuma Suzuki,Hirofumi FUJISAWA. Владелец: Toshiba Kk. Дата публикации: 2017-11-01.

Junction type field-effect semiconductor device and its manufacturing method

Номер патента: JPS55143076A. Автор: Tadahiko Tanaka,Takeshi Omukae. Владелец: Tokyo Sanyo Electric Co Ltd. Дата публикации: 1980-11-08.

Semiconductor device and its manufacturing method

Номер патента: US20160141241A1. Автор: Akira Nakajima,Yoshiaki Yamamoto. Владелец: Renesas Electronics Corp. Дата публикации: 2016-05-19.

Thin semiconductor device and its manufacturing method

Номер патента: TW452903B. Автор: Tzung-Je Tsai,Jin-Chiuan Bai. Владелец: United Test Ct Inc. Дата публикации: 2001-09-01.

Semiconductor device and a manufacturing method thereof

Номер патента: US8395203B2. Автор: Yasushi Ishii,Hiraku Chakihara. Владелец: Renesas Electronics Corp. Дата публикации: 2013-03-12.

Semiconductor device and its manufacturing method, circuit board, and electric apparatus

Номер патента: WO2003079431A1. Автор: Ikuya Miyazawa. Владелец: SEIKO EPSON CORPORATION. Дата публикации: 2003-09-25.

Semiconductor device and the manufacturing method thereof

Номер патента: TW447114B. Автор: Hiroshi Miki,Kazunari Torii,Yoshihisa Fujisaki. Владелец: HITACHI LTD. Дата публикации: 2001-07-21.

Semiconductor device structure and manufacturing method

Номер патента: TWI562291B. Автор: Yung Sheng Liu,Yi Chen Liu,Yi Jen Lai,Chun Jen Chen,Li Guo Lee,Hsi Kuei Cheng. Владелец: Taiwan Semiconductor Mfg Co Ltd. Дата публикации: 2016-12-11.

Semiconductor device and the manufacture method thereof, circuit board and the electronic machine

Номер патента: TW404027B. Автор: Nobuaki Hashimoto. Владелец: Seiko Epson Corp. Дата публикации: 2000-09-01.

Semiconductor device and the manufacturing method thereof

Номер патента: TW478157B. Автор: Yukihiro Ushiku. Владелец: Toshiba Corp. Дата публикации: 2002-03-01.

Semiconductor device and its manufacturing method

Номер патента: TW328151B. Автор: Toru Tono. Владелец: Seiko Epson Corp. Дата публикации: 1998-03-11.

Semiconductor device and its manufacturing method

Номер патента: TW540103B. Автор: Mitsuo Nissa. Владелец: NEC Electronics Corp. Дата публикации: 2003-07-01.

Semiconductor device and its manufacturing method, circuit board, and electronic apparatus

Номер патента: TW200535982A. Автор: Ikuya Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 2005-11-01.

Stacked layer type semiconductor device and its manufacturing method

Номер патента: US20040130017A1. Автор: Takakazu Fukumoto. Владелец: Renesas Technology Corp. Дата публикации: 2004-07-08.

Silicon carbide semiconductor device and its manufacturing method

Номер патента: EP1693896B1. Автор: K. c/o The Kansai Elec. Power Co. Inc. NAKAYAMA,Y. c/o The Kansai Elec. Power Co. Inc. SUGAWARA,K. c/o The Kansai Elec. Power Co. Inc. ASANO,H. c/o Central Research Institute TSUCHIDA,I. c/o Central Research Institute KAMATA,T. c/o Central Research Institute MIYANAGI,T. c/o Central Research Institute NAKAMURA. Владелец: Kansai Electric Power Co Inc. Дата публикации: 2013-10-02.

Semiconductor device and its manufacturing method

Номер патента: TW550767B. Автор: Kenichi Yamamoto,Junichi Arita,Kenji Ujiie. Владелец: HITACHI LTD. Дата публикации: 2003-09-01.

Semiconductor device and its manufacturing method

Номер патента: TW515036B. Автор: Shinichiro Kimura,Tomoyuki Hamada,Masahiko Hiratani. Владелец: HITACHI LTD. Дата публикации: 2002-12-21.

Semiconductor device and its manufacturing method

Номер патента: TW517381B. Автор: Taku Umebayashi. Владелец: Sony Corp. Дата публикации: 2003-01-11.

Semiconductor device and a manufacturing method thereof

Номер патента: US20130164927A1. Автор: Yasushi Ishii,Hiraku Chakihara. Владелец: Renesas Electronics Corp. Дата публикации: 2013-06-27.

Semiconductor device and the manufacturing method thereof

Номер патента: TWI251254B. Автор: Akiyoshi Mutou. Владелец: Sharp Kk. Дата публикации: 2006-03-11.

Semiconductor device and its manufacturing method

Номер патента: TW200529408A. Автор: Kazunari Suzuki,Toshihiro Shiotsuki,Hideyuki Suga,Kouichi Kanemoto. Владелец: Renesas Tech Corp. Дата публикации: 2005-09-01.

The semiconductor device and its manufacturing method

Номер патента: TW328652B. Автор: Masayuki Yasuda,Michio Tanaka,Michio Nishimura,Katsuhiro Saitou,Takashi Hayakawa. Владелец: Texas Instruments Inc. Дата публикации: 1998-03-21.

Inspection apparatus and methods, lithographic system and device manufacturing method

Номер патента: WO2015086285A1. Автор: Richard Quintanilha. Владелец: ASML Netherlands B.V.. Дата публикации: 2015-06-18.

Semiconductor apparatus and method for fabricating same

Номер патента: US20230139758A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2023-05-04.

Semiconductor apparatus and method for fabricating same

Номер патента: EP4138145A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2023-02-22.

Inspection Apparatus and Methods, Lithographic System and Device Manufacturing Method

Номер патента: US20160320711A1. Автор: QUINTANILHA Richard. Владелец: ASML Netherlands B.V.. Дата публикации: 2016-11-03.

Immersion exposure apparatus and immersion exposure method, and device manufacturing method

Номер патента: US20080068571A1. Автор: Tohru Kiuchi. Владелец: Nikon Corp. Дата публикации: 2008-03-20.

Laser-excited plasma light source, exposure apparatus and its making method, and device manufacturing method

Номер патента: US6504903B1. Автор: Hiroyuki Kondo,Noriaki Kandaka. Владелец: Nikon Corp. Дата публикации: 2003-01-07.

back grinding method of wafer and semiconductor package thereof and its manufacturing method

Номер патента: KR100388287B1. Автор: 강대병,박인배,한병준,윤주훈. Владелец: 앰코 테크놀로지 코리아 주식회사. Дата публикации: 2003-06-19.

Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof

Номер патента: TW200603393A. Автор: Masafumi Muramatsu. Владелец: Sony Corp. Дата публикации: 2006-01-16.

Semiconductor device, electronic device including the same and manufacturing methods thereof

Номер патента: US20150162247A1. Автор: Myeongcheol Kim,Yong-Joon Choi,Cheol Kim,Geumjung Seong,Hak-sun Lee,Ji-Eun Han,Haegeon JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-06-11.

Pellicle frame, pellicle, exposure original plate with pellicle, exposure method, and semiconductor or liquid-crystal-display manufacturing method

Номер патента: EP4095600A4. Автор: Akinori Nishimura. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-03-13.

ORGANIC LAYER DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE APPARATUS, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE MANUFACTURED USING THE METHOD

Номер патента: US20140014918A1. Автор: Han Kyu-Seob. Владелец: Samsung Display Co., Ltd.. Дата публикации: 2014-01-16.

THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD

Номер патента: US20150171148A1. Автор: CHOI Beohm-Rock,Song Jung-Bae,Lee Sang-Pil,Song Young-Rok. Владелец: . Дата публикации: 2015-06-18.

INFORMATION PROCESSING APPARATUS, MEASURING APPARATUS, SYSTEM, INTERFERENCE DETERMINATION METHOD, AND ARTICLE MANUFACTURING METHOD

Номер патента: US20180290307A1. Автор: Watanabe Daisuke. Владелец: . Дата публикации: 2018-10-11.

Plate-type heat transport device, electronic apparatus, and plate-type heat transport device manufacturing method

Номер патента: JP6396533B1. Автор: 顕範内野,厚喜中村,拓郎上村. Владелец: Lenovo Singapore Pte Ltd. Дата публикации: 2018-09-26.

Printed circuit board and Semiconductor package using thereof and Manufacturing method thereof

Номер патента: KR101330780B1. Автор: 김윤태,손진영,류영호. Владелец: 엘지이노텍 주식회사. Дата публикации: 2013-11-18.

Memory device, semiconductor device and method for manufacturing the same

Номер патента: US20210074685A1. Автор: Chih-Wei Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-03-11.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US20230063993A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-03-02.

Semiconductor devices and methods of manufacturing

Номер патента: US11915946B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US11830929B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-11-28.

Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same

Номер патента: US20200168555A1. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-05-28.

Semiconductor device and manufacturing method therefor

Номер патента: US10103082B2. Автор: Junhong Feng. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-10-16.

Semiconductor Devices and Methods of Manufacturing

Номер патента: US20240162059A1. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-16.

Dual crystal orientation for semiconductor devices

Номер патента: US20230290689A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Ching-Wei Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-14.

Semiconductor device and manufacturing method thereof

Номер патента: US11569419B2. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-01-31.

Semiconductor device and manufacturing method thereof

Номер патента: US11588025B2. Автор: Jia Ren,Fulong Qiao,Pengkai Xu. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2023-02-21.

Semiconductor device and manufacturing method thereof

Номер патента: US20220045179A1. Автор: Jia Ren,Fulong Qiao,Pengkai Xu. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2022-02-10.

Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US20230066077A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2023-03-02.

Semiconductor device and manufacturing method thereof, and electronic device including the semiconductor device

Номер патента: US20210175344A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2021-06-10.

Semiconductor Device and Manufacturing Method Thereof

Номер патента: US20230103393A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2023-04-06.

Semiconductor device and manufacturing method therefor

Номер патента: US20180005915A1. Автор: Junhong Feng. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-01-04.

Semiconductor device and manufacturing method thereof

Номер патента: US11961944B2. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-16.

Semiconductor device and manufacturing method therefor

Номер патента: EP3958329A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2022-02-23.

Semiconductor device and manufacturing method thereof

Номер патента: US20220140197A1. Автор: Wen-Hsiung LU,Ming-Da Cheng,Mirng-Ji Lii,Chen-En Yen,Chin-Wei Kang,Cheng-Jen Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-05-05.

Memory device, semiconductor device and manufacturing method of the memory device

Номер патента: US20240032304A1. Автор: Feng-Cheng Yang,Sheng-Chen Wang,Han-Jong Chia,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Information processing apparatus, storage medium, lithography apparatus, lithography system, and article manufacturing method

Номер патента: US20200004158A1. Автор: Shinichiro Koga,Noburu Takakura,Takahiro Takiguchi. Владелец: Canon Inc. Дата публикации: 2020-01-02.

SIGNAL PROCESSING APPARATUS, APPARATUS AND METHOD FOR MONITORING CHANNEL SPACING AND SYSTEM

Номер патента: US20170310440A1. Автор: Tao Zhenning,DOU Liang,ZHAO Ying,Li Huihui. Владелец: FUJITSU LIMITED. Дата публикации: 2017-10-26.

Manufacturing method of a semiconductor device with a trench capacitor

Номер патента: US5302541A. Автор: Moriaki Akazawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 1994-04-12.

Information processing apparatus and crossbar board unit / back panel assembly manufacturing method

Номер патента: JP4397109B2. Автор: 肇村上,良典鵜塚,義裕森田,浩二花田,泰志増田. Владелец: Fujitsu Ltd. Дата публикации: 2010-01-13.

Semiconductor device and manufacturing method thereof

Номер патента: US5218218A. Автор: Moriaki Akazawa. Владелец: Mitsubishi Electric Corp. Дата публикации: 1993-06-08.

Semiconductor device and manufacturing method thereof

Номер патента: US20090227079A1. Автор: Toshihiko Iinuma. Владелец: Toshiba Corp. Дата публикации: 2009-09-10.

Semiconductor device and manufacture method of the same

Номер патента: US10685917B2. Автор: Zhiqi Wang. Владелец: China Wafer Level CSP Co Ltd. Дата публикации: 2020-06-16.

Method for manufacturing semiconductor device having thinned fins

Номер патента: US10546946B2. Автор: Masaaki Shinohara. Владелец: Renesas Electronics Corp. Дата публикации: 2020-01-28.

Information processing apparatus, storage medium, lithography apparatus, lithography system, and article manufacturing method

Номер патента: KR102543393B1. Автор: 신이치로 고가,노부루 다카쿠라,다카히로 다키구치. Владелец: 캐논 가부시끼가이샤. Дата публикации: 2023-06-14.

Semiconductor device having a surface insulator layer and manufacturing method therefor

Номер патента: US10312093B2. Автор: FENG CHEN,Xianming Zhang,Ling TANG,Leibin Yuan,Feng DOU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-06-04.

Semiconductor Devices and Methods

Номер патента: US20210126097A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Guan-Lin Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-29.

Semicondcutor device and manufacturing method thereof

Номер патента: US20190027452A1. Автор: Chen-Shien Chen,chao-yi Wang,Hon-Lin Huang,Chin-Yu Ku,Cheng-Lung Yang,Chien-Hung Kuo,Ching-Hui Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-24.

Semiconductor device and manufacture thereof

Номер патента: US20190067114A1. Автор: JIQUAN Liu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-02-28.

Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same

Номер патента: US20230377965A1. Автор: Kuo-Chiang Tsai,Jhy-Huei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor device with capacitor contact surrounded by conductive ring and manufacturing method of the semiconductor device

Номер патента: US11895823B2. Автор: Noriaki Ikeda. Владелец: Winbond Electronics Corp. Дата публикации: 2024-02-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20220376053A1. Автор: King Yuen Wong,Kye Jin Lee. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2022-11-24.

Semiconductor device and manufacturing method and operating method for the same

Номер патента: US20140191792A1. Автор: Cheng-Chi Lin,Ching-Lin Chan,Shih-Chin Lien,Chen-Yuan Lin. Владелец: Macronix International Co Ltd. Дата публикации: 2014-07-10.

Semiconductor device and manufacturing method therefor

Номер патента: US20200105920A1. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-04-02.

Semiconductor device and manufacturing method therefor

Номер патента: US20200235233A1. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2020-07-23.

Semiconductor device and manufacturing method therefor

Номер патента: US20190035925A1. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-01-31.

Semiconductor device and manufacturing method therefor

Номер патента: US11164973B2. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-11-02.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US11837639B2. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2023-12-05.

Semiconductor device and manufacturing method thereof employing an etching transition layer

Номер патента: US11888052B2. Автор: YU Zhou,Qian Sun,Hui Yang,Shuai Su,Yaozong ZHONG,Jianxun Liu,Xiaoning Zhan,Meixin FENG,Hongwei Gao. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2024-01-30.

Semiconductor device and manufacturing method thereof

Номер патента: US10134849B2. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-11-20.

Semiconductor device and manufacturing method thereof

Номер патента: US20180097068A1. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-04-05.

Power semiconductor device and manufacturing method thereof

Номер патента: US11967631B1. Автор: Hao Feng,Yong Liu,Jing DENG,Johnny Kin On Sin. Владелец: Jsab Technologies Shenzhen Ltd. Дата публикации: 2024-04-23.

Semiconductor device and methods for manufacturing thereof

Номер патента: US11776848B2. Автор: Chih-Wei Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-10-03.

Semiconductor device and manufacturing method thereof

Номер патента: US20100108979A1. Автор: Byung-Ho Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-05-06.

Wafer-level semiconductor device and manufacturing method thereof

Номер патента: US20160336500A1. Автор: Yibin Zhang,Fei Xu,Yong Cai. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2016-11-17.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230403856A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-12-14.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20200411550A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2020-12-31.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20230157025A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2023-05-18.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US20240064975A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-02-22.

Semiconductor device and manufacturing method therefor

Номер патента: US20030218230A1. Автор: Hideki Takahashi,Shinji Aono. Владелец: Mitsubishi Electric Corp. Дата публикации: 2003-11-27.

Power semiconductor device and manufacturing method thereof

Номер патента: US20240120386A1. Автор: Han Seok KO,Dae Il Kim,Ji Houn Jung,Ung Bi Son. Владелец: DB HiTek Co Ltd. Дата публикации: 2024-04-11.

Semiconductor device and method of manufacturing the same

Номер патента: US20230133883A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technologies Co Ltd. Дата публикации: 2023-05-04.

Semiconductor device and manufacturing method therefor

Номер патента: US20240006492A1. Автор: Dong Fang,Kui Xiao. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2024-01-04.

Semiconductor device and manufacturing method therefor

Номер патента: EP4239687A1. Автор: Dong Fang,Kui Xiao. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2023-09-06.

Semiconductor device and manufacturing method therefor

Номер патента: US20180277644A1. Автор: FENG CHEN,Xianming Zhang,Ling TANG,Leibin Yuan,Feng DOU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-09-27.

Semiconductor device and method for manufacturing same

Номер патента: EP4138144A1. Автор: Zilan Li. Владелец: Guangdong Zhineng Technology Co Ltd. Дата публикации: 2023-02-22.

Semiconductor device and manufacturing method thereof

Номер патента: US11916113B2. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Gerben Doornbos. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Semiconductor device and manufacturing method of forming the same

Номер патента: US20240136348A1. Автор: Seungchul Lee,Yijyun Ke. Владелец: PanJit International Inc. Дата публикации: 2024-04-25.

Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same

Номер патента: US20210082756A1. Автор: Kuo-Chiang Tsai,Jhy-Huei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-18.

Semiconductor device and manufacturing method therefor

Номер патента: US20140077279A1. Автор: Ajin TU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2014-03-20.

Semiconductor device and manufacturing method therefor

Номер патента: US20190006509A1. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-01-03.

Semiconductor device and manufacturing method thereof

Номер патента: US20220310617A1. Автор: Tong Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-29.

Semiconductor device and manufacturing method therefor

Номер патента: US20240162379A1. Автор: Kai Cheng,Weihua Liu. Владелец: Enkris Semiconductor Wuxi Ltd. Дата публикации: 2024-05-16.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US20210043742A1. Автор: Kang Sik Choi. Владелец: SK hynix Inc. Дата публикации: 2021-02-11.

Method for forming a semiconductor device comprising a selectively grown graphene layer

Номер патента: US10121872B2. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-11-06.

Semiconductor device and manufacturing method thereof

Номер патента: US20230170223A1. Автор: Yang Wu,FAN YANG,Sheng Hu,Daohong YANG,Liliang GU. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2023-06-01.

Semiconductor device and manufacturing method thereof

Номер патента: US20210376089A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Gerben Doornbos. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Semiconductor device and manufacturing method of the semiconductor device

Номер патента: US11832445B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2023-11-28.

Semiconductor device and manufacturing method therefor

Номер патента: EP4383346A1. Автор: Hui Sun,Zhibin Chen,Yong Hou,Biao Gao. Владелец: Huawei Digital Power Technologies Co Ltd. Дата публикации: 2024-06-12.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US20230225229A1. Автор: HE Qian,Taiwei CHIU,Tingying SHEN. Владелец: Xiamen Industrial Technology Research Institute Co Ltd. Дата публикации: 2023-07-13.

Semiconductor device and manufacturing method thereof

Номер патента: US20240154002A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Gerben Doornbos. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-09.

Semiconductor device and manufacturing method therefor

Номер патента: US20230163192A1. Автор: Bo Shi,Dan ZENG,Daokun CHEN,Yiren LIN. Владелец: Gree Electric Appliances Inc of Zhuhai. Дата публикации: 2023-05-25.

Semiconductor device and manufacturing method therefor

Номер патента: EP4254508A1. Автор: Bo Shi,Dan ZENG,Daokun CHEN,Yiren LIN. Владелец: Gree Electric Appliances Inc of Zhuhai. Дата публикации: 2023-10-04.

INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, STORAGE MEDIUM, SYSTEM, AND ARTICLE MANUFACTURING METHOD

Номер патента: US20180290300A1. Автор: Niwayama Yutaka. Владелец: . Дата публикации: 2018-10-11.

Semiconductor device and its manufacturing method, connector for connecting semiconductor device to substrate and method for connecting semiconductor device to substrate

Номер патента: JP2002009235A. Автор: Takakazu Fukumoto,孝和福元. Владелец: Mitsubishi Electric Corp. Дата публикации: 2002-01-11.

Information processing apparatus, information processing method, article manufacturing system, and article manufacturing method

Номер патента: KR20220112674A. Автор: 히로아키 후지와라. Владелец: 캐논 가부시끼가이샤. Дата публикации: 2022-08-11.

Bio signal processing apparatus, apparatus and method for living body information detecting

Номер патента: KR20180060724A. Автор: 권의근,윤승근. Владелец: 삼성전자주식회사. Дата публикации: 2018-06-07.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, SOI-TYPE SUBSTRATE FOR THIS DEVICE AND ITS MANUFACTURING METHOD, AND DISPLAY DEVICE USING SUCH A SUBSTRATE

Номер патента: FR2837980B1. Автор: Takashi Itoga,Yutaka Takafuji. Владелец: Sharp Corp. Дата публикации: 2007-04-06.

Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof

Номер патента: US8163576B2. Автор: Yuji Abe,Hitoshi Sakuma,Kyozo Kanamoto,Katsuomi Shiozawa,Kazushige Kawasaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2012-04-24.

Contact electrode structure for semiconductor device

Номер патента: US5302855A. Автор: Yoshio Nakamura,Masaru Sakamoto,Shigeyuki Matsumoto. Владелец: Canon Inc. Дата публикации: 1994-04-12.

Semiconductor device, multi-chip semiconductor device, device, and manufacturing method of semiconductor device

Номер патента: JP5682496B2. Автор: 正司竹中,克義山本,竹中　正司,山本　克義. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2015-03-11.

Semiconductor device and manufacturing method for the same

Номер патента: US20060208349A1. Автор: Toshiyuki Fukuda,Hiroaki Fujimoto,Mutsuo Tsuji,Takashi Yui,Yoshiaki Takeoka. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2006-09-21.

Trench power seminconductor device and manufacturing method thereof

Номер патента: US11049950B2. Автор: Hsiu-wen Hsu. Владелец: Super Group Semiconductor Co Ltd. Дата публикации: 2021-06-29.

Image processing method, image processing apparatus, storage medium, image processing system, and learned model manufacturing method

Номер патента: CN111753869A. Автор: 日浅法人. Владелец: Canon Inc. Дата публикации: 2020-10-09.

Semiconductor device and manufacturing method therefor

Номер патента: EP3301722A1. Автор: Ming Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-04-04.

Method for patterning metal foil, electric wiring substrate and its manufacturing method, semiconductor device and its manufacturing method, and circuit board and electronic device

Номер патента: JP2002012988A. Автор: 秀樹湯澤,Hideki Yuzawa. Владелец: Seiko Epson Corp. Дата публикации: 2002-01-15.

Insulated gate-type semiconductor device and manufacturing method thereof

Номер патента: US7972928B2. Автор: Yukihiro Hisanaga. Владелец: Toyota Motor Corp. Дата публикации: 2011-07-05.

Semiconductor device with fish bone structure and methods of forming the same

Номер патента: US20220262958A1. Автор: Chih-Chuan Yang,Kuo-Hsiu Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-18.

Semiconductor devices and preparation methods therefor

Номер патента: US20240040807A1. Автор: Eunseok Lee. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2024-02-01.

Semiconductor device and manufacturing method therefor

Номер патента: US20240047212A1. Автор: FENG Lin,YU HUANG,Xiang Qin,Hongfeng JIN,Ruibin CAO,Chunxu LI. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2024-02-08.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US11855023B2. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Singapore Holding Pte Ltd. Дата публикации: 2023-12-26.

Semiconductor device with l-shape conductive feature and methods of forming the same

Номер патента: EP3944295A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Yu-Ming Lin,Li-Zhen YU,Yi-Hsun CHIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-26.

Semiconductor device and manufacturing method thereof

Номер патента: US20210399097A1. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-23.

Semiconductor device and manufacturing method thereof

Номер патента: US20220367645A1. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-17.

Semiconductor device and manufacturing method thereof

Номер патента: US20230352544A1. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-02.

Semiconductor device and manufacturing method therof

Номер патента: US20200075593A1. Автор: Deyuan Xiao. Владелец: SiEn Qingdao Integrated Circuits Co Ltd. Дата публикации: 2020-03-05.

Semiconductor device and manufacturing method thereof

Номер патента: US20180308954A1. Автор: Chia-Wei Huang,Tan-Ya Yin. Владелец: United Microelectronics Corp. Дата публикации: 2018-10-25.

Semiconductor device and manufacturing method thereof

Номер патента: US20160322297A1. Автор: Hae Soo Kim. Владелец: SK hynix Inc. Дата публикации: 2016-11-03.

Semiconductor device and method of manufacturing same

Номер патента: US20140070287A1. Автор: Ming Zhang,Yasuki Yoshihisa. Владелец: Renesas Electronics Corp. Дата публикации: 2014-03-13.

Method of manufacturing a semiconductor device

Номер патента: US20150303096A1. Автор: Ming Zhang,Yasuki Yoshihisa. Владелец: Renesas Electronics Corp. Дата публикации: 2015-10-22.

Semiconductor device with backside self-aligned power rail and methods of forming the same

Номер патента: US11916125B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Semiconductor device and manufacturing method thereof

Номер патента: US10204986B1. Автор: Kuan-Hung Chen,Chun-Tsen Lu,Rung-Yuan Lee. Владелец: United Microelectronics Corp. Дата публикации: 2019-02-12.

Semiconductor device and manufacturing method thereof

Номер патента: US11901284B2. Автор: Tae Kyung Kim,Jeong Yun Lee,Jae Yoon Noh,Hyo Sub YEOM. Владелец: SK hynix Inc. Дата публикации: 2024-02-13.

Semiconductor device and manufacturing method thereof

Номер патента: US8610175B2. Автор: ZHONGSHAN Hong,Huojin Tu. Владелец: Semiconductor Manufacturing International Beijing Corp. Дата публикации: 2013-12-17.

Semiconductor device and manufacturing method thereof

Номер патента: US11749723B2. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-05.

Semiconductor device with corner isolation protection and methods of forming the same

Номер патента: US20230387199A1. Автор: Shih-Hao Lin,Xusheng Wu,Chang-Miao Liu,Bwo-Ning Chen,Pin-Ju Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Semiconductor device and manufacturing method

Номер патента: US20190393049A1. Автор: Shinichi Miyake. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2019-12-26.

Semiconductor device with epitaxial bridge feature and methods of forming the same

Номер патента: US11855225B2. Автор: Wei-Yang Lee,Chia-Pin Lin,Ting-Yeh Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device and manufacturing method thereof

Номер патента: US20230411204A1. Автор: Chi-Cherng Jeng,Chih-Nan Wu,Wei Pang Chen. Владелец: Nexchip Semiconductor Corp. Дата публикации: 2023-12-21.

Semiconductor device doped from a diffused layer

Номер патента: US10964818B2. Автор: YONG Li. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-03-30.

Semiconductor device with S/D bottom isolation and methods of forming the same

Номер патента: US11854896B2. Автор: Ying-Keung Leung,Xusheng Wu,Huiling Shang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Semiconductor device

Номер патента: US11869844B2. Автор: Hiroyuki Shinkai. Владелец: ROHM CO LTD. Дата публикации: 2024-01-09.

Semiconductor device circuitry formed from remote reservoirs

Номер патента: US20240071989A1. Автор: Kyle K. Kirby,Terrence B. Mcdaniel. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

Manufacturing method of semiconductor device

Номер патента: US20230361177A1. Автор: Chao-Ching Cheng,Tzu-Chiang CHEN,Hung-Li Chiang,Yi-Tse Hung,Ang-Sheng Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

Semiconductor device with backside spacer and methods of forming the same

Номер патента: US20230369223A1. Автор: Mei-Yun Wang,Po-Yu Huang,Fu-Kai Yang,Chia-Hsien Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device and manufacturing method thereof

Номер патента: US20230411479A1. Автор: Chih-Hao Wang,Chung-Wei Hsu,Lung-Kun Chu,Jia-Ni YU,Kuo-Cheng Chiang,Chun-Fu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Self-aligned scheme for semiconductor device and method of forming the same

Номер патента: US11830770B2. Автор: Chii-Ping Chen,Neng-Jye Yang,Hsiu-Wen Hsueh,Cai-Ling Wu,Ya-Ching Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-28.

Semiconductor device and manufacturing method thereof

Номер патента: US20150228682A1. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2015-08-13.

Semiconductor device and manufacturing method thereof

Номер патента: US20150380360A1. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2015-12-31.

Semiconductor device and manufacturing method thereof

Номер патента: US9048355B2. Автор: Keiichiro Kashihara. Владелец: Renesas Electronics Corp. Дата публикации: 2015-06-02.

Semiconductor device and fabrication method thereof

Номер патента: US10903201B2. Автор: Xin Gui ZHANG,Yao QI DONG. Владелец: SMIC Advanced Technology R&D Shanghai Corp. Дата публикации: 2021-01-26.

Semiconductor device and fabrication method thereof

Номер патента: US20190206853A1. Автор: Xin Gui ZHANG,Yao QI DONG. Владелец: SMIC Advanced Technology R&D Shanghai Corp. Дата публикации: 2019-07-04.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US20130082277A1. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon,Seok Yoon HONG. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-04-04.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US8860087B2. Автор: Ki Yeol Park,Young Hwan Park,Woo Chul Jeon,Seok Yoon HONG. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2014-10-14.

Self-aligned scheme for semiconductor device and method of forming the same

Номер патента: US20230411210A1. Автор: Chii-Ping Chen,Neng-Jye Yang,Hsiu-Wen Hsueh,Cai-Ling Wu,Ya-Ching Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Semiconductor device and manufacturing mehod thereof

Номер патента: US20190088502A1. Автор: Shu-Ming Li,Tzu-Ming Ou Yang,Ko-Po Tseng. Владелец: Winbond Electronics Corp. Дата публикации: 2019-03-21.

Semiconductor device with air gaps between metal gates and method of forming the same

Номер патента: US11756835B2. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Semiconductor device interconnects formed through volumetric expansion

Номер патента: US20240071968A1. Автор: Wei Zhou,Kyle K. Kirby,Terrence B. Mcdaniel. Владелец: Micron Technology Inc. Дата публикации: 2024-02-29.

Semiconductor device with backside spacer and methods of forming the same

Номер патента: US11721626B2. Автор: Mei-Yun Wang,Po-Yu Huang,Fu-Kai Yang,Chia-Hsien Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-08.

Semiconductor device with backside spacer and methods of forming the same

Номер патента: EP3944298A1. Автор: Mei-Yun Wang,Po-Yu Huang,Fu-Kai Yang,Jason Yao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-26.

Semiconductor device with backside self-aligned power rail and methods of forming the same

Номер патента: US20220359699A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Shi Ning Ju,Chih-Chao CHOU,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Semiconductor device with fish bone structure and methods of forming the same

Номер патента: US20220037535A1. Автор: Chih-Chuan Yang,Kuo-Hsiu Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-03.

Semiconductor device with fish bone structure and methods of forming the same

Номер патента: EP3945598A1. Автор: Chih-Chuan Yang,Kuo-Hsiu Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-02-02.

Semiconductor device with fish bone structure and methods of forming the same

Номер патента: US11791422B2. Автор: Chih-Chuan Yang,Kuo-Hsiu Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-17.

Semiconductor device with corner isolation protection and methods of forming the same

Номер патента: US11916105B2. Автор: Shih-Hao Lin,Xusheng Wu,Chang-Miao Liu,Bwo-Ning Chen,Pin-Ju Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-27.

Semiconductor device and its manufacturing method

Номер патента: US20050087800A1. Автор: Naoto Fujishima,Katsuya Tabuchi,Akio Sugi,Mutsumi Kitamura,Setsuko Wakimoto. Владелец: Fuji Electric Co Ltd. Дата публикации: 2005-04-28.

Semiconductor device and manufacturing method thereof

Номер патента: US20230420558A1. Автор: Yuan Fang,Ke Jiang,Huiling ZUO,Chunlin ZHU,Xukun ZHANG,Junli Xiang,Jinshan SHI. Владелец: Nexperia Technology Shanghai Ltd. Дата публикации: 2023-12-28.

Semiconductor device and manufacture thereof

Номер патента: US20190355686A1. Автор: Jun Zhu,You WU. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-11-21.

Nitride semiconductor device and manufacturing method thereof

Номер патента: US20220384632A1. Автор: Wen-Jung Liao,Chih Tung Yeh. Владелец: United Microelectronics Corp. Дата публикации: 2022-12-01.

Semiconductor device and manufacturing method thereof

Номер патента: US20230187484A1. Автор: Chen-Shuo Huang. Владелец: AUO Corp. Дата публикации: 2023-06-15.

Trench-gate semiconductor device and method for manufacturing the same

Номер патента: EP4261894A1. Автор: Steven Peake,Imran Siddiqui. Владелец: Nexperia BV. Дата публикации: 2023-10-18.

Semiconductor device with multichannel heterostructure and manufacturing method thereof

Номер патента: US11942525B2. Автор: HAO LI,Jian Wang,King Yuen Wong,Anbang ZHANG,Haoning ZHENG. Владелец: Innoscience Zhuhai Technology Co Ltd. Дата публикации: 2024-03-26.

Trench-gate semiconductor device and method for manufacturing the same

Номер патента: US20230335634A1. Автор: Steven Peake,MD Imran Siddiqui. Владелец: Nexperia BV. Дата публикации: 2023-10-19.

Semiconductor Device With Fish Bone Structure And Methods Of Forming The Same

Номер патента: US20230387326A1. Автор: Chih-Chuan Yang,Kuo-Hsiu Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Semiconductor device and manufacturing method thereof

Номер патента: US20240088021A1. Автор: Tae Kyung Kim,Jeong Yun Lee,Jae Yoon Noh,Hyo Sub YEOM. Владелец: SK hynix Inc. Дата публикации: 2024-03-14.

Wafer level fan out semiconductor device and manufacturing method thereof

Номер патента: US20170323862A1. Автор: Sang Gyu Lee,Sung Kyu Kim,Jong Sik Paek,Sang Won Kim,Choon Heung Lee,In Bae Park,Boo Yang Jung. Владелец: Amkor Technology Inc. Дата публикации: 2017-11-09.

Semiconductor device with s/d bottom isolation and methods of forming the same

Номер патента: US20240105517A1. Автор: Ying-Keung Leung,Xusheng Wu,Huiling Shang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-28.

Semiconductor device and manufacturing method thereof

Номер патента: WO2024113076A1. Автор: Sichao LI,Jianfa Zhang. Владелец: Innoscience (suzhou) Semiconductor Co., Ltd.. Дата публикации: 2024-06-06.

Semiconductor device with gate recess and methods of forming the same

Номер патента: US11991872B2. Автор: Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same

Номер патента: US20230369128A1. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device and manufacturing method thereof

Номер патента: US20200294881A1. Автор: Ying-Ru Shih,Hsien-Chin Chiu. Владелец: GlobalWafers Co Ltd. Дата публикации: 2020-09-17.

Semiconductor device and manufacturing method thereof

Номер патента: EP4297096A1. Автор: Yuan Fang,Ke Jiang,Ken Zhang,Huiling ZUO,Chunlin ZHU,Junli Xiang,Jinshan SHI. Владелец: Nexperia Technology Shanghai Ltd. Дата публикации: 2023-12-27.

Semiconductor device and manufacturing method thereof

Номер патента: US20230187485A1. Автор: Chen-Shuo Huang. Владелец: AUO Corp. Дата публикации: 2023-06-15.

Semiconductor device and manufacturing method thereof

Номер патента: US20230378254A1. Автор: Jong Ho Park,Che-Ming Lin,Kwang Yeon JUN. Владелец: PanJit International Inc. Дата публикации: 2023-11-23.

Self-Aligned Scheme for Semiconductor Device and Method of Forming the Same

Номер патента: US20210098290A1. Автор: Chii-Ping Chen,Neng-Jye Yang,Hsiu-Wen Hsueh,Cai-Ling Wu,Ya-Ching Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-01.

Power semiconductor device and manufacturing method therefor

Номер патента: EP3905334A1. Автор: FENG Lin,SHENG Li,Shengli Lu,Longxing Shi,Kui Xiao,Weifeng Sun,Siyang Liu,Jiaxing WEI,Rongcheng LOU. Владелец: CSMC Technologies Fab2 Co Ltd. Дата публикации: 2021-11-03.

Semiconductor Device With Air Gaps Between Metal Gates And Method Of Forming The Same

Номер патента: US20220344216A1. Автор: Xusheng Wu,Chang-Miao Liu,Wei-Lun Min. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-27.

Semiconductor device and manufacture thereof

Номер патента: US20180204911A1. Автор: Weili Zhao,Yiqi Wang,XiaoFang Yang,Jianxiang Cai,JingGuo Jia. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-07-19.

Semiconductor device and manufacturing method thereof

Номер патента: US20200365488A1. Автор: Chen-Hua Yu,Kuo-Chung Yee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-19.

Semiconductor device including air gap

Номер патента: US8071971B2. Автор: Byung-Ho Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2011-12-06.

Semiconductor Device with Dual Isolation Liner and Method of Forming the Same

Номер патента: US20210265224A1. Автор: Yu-Kuan Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-26.

3d stacking semiconductor device and manufacturing method thereof

Номер патента: US20180308748A1. Автор: Shih-Hung Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2018-10-25.

Semiconductor device and manufacturing method thereof

Номер патента: US20210143270A1. Автор: Kai Jen,Hao-Chuan Chang. Владелец: Winbond Electronics Corp. Дата публикации: 2021-05-13.

Semiconductor device and manufacturing method thereof

Номер патента: US20230059600A1. Автор: Deyuan Xiao,GuangSu SHAO,Yunsong QIU. Владелец: Beijing Superstring Academy of Memory Technology. Дата публикации: 2023-02-23.

Semiconductor device active region profile and method of forming the same

Номер патента: US12027626B2. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-02.

Semiconductor device and manufacturing method thereof

Номер патента: US12034052B2. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20130230936A1. Автор: Ikeda Masao,Suzuki Yasuhiko,Goto Osamu,ASANO TAKEHARU,TAKETANI MOTONOBU,SHIBUYA KATSUYOSHI,MIZUNO TAKASHI,TOJO TSUYOSHI,UCHIDA SHIRO. Владелец: SONY CORPORATION. Дата публикации: 2013-09-05.

Semiconductor device and manufacturing method thereof

Номер патента: US8723254B2. Автор: Toshiaki Hikichi. Владелец: Mitsubishi Electric Corp. Дата публикации: 2014-05-13.

Optical semiconductor device lead frame, optical semiconductor device lead frame manufacturing method, and optical semiconductor device

Номер патента: JPWO2010150824A1. Автор: 伸菊池,良聡小林. Владелец: THE FURUKAW ELECTRIC CO., LTD.. Дата публикации: 2012-12-10.

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

Номер патента: US7964419B2. Автор: Motonobu Takeya,Yasuhiko Suzuki,Osamu Goto,Takashi Mizuno,Masao Ikeda,Shiro Uchida,Takeharu Asano,Tsuyoshi Tojo,Katsuyoshi Shibuya. Владелец: Sony Corp. Дата публикации: 2011-06-21.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE

Номер патента: JPWO2009123127A1. Автор: 茂森,浩田邉,田邉　浩,功東海林,めぐみ柴田. Владелец: NEC LCD Technologies Ltd. Дата публикации: 2011-07-28.

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

Номер патента: US8460958B2. Автор: Motonobu Takeya,Yasuhiko Suzuki,Osamu Goto,Takashi Mizuno,Masao Ikeda,Shiro Uchida,Takeharu Asano,Tsuyoshi Tojo,Katsuyoshi Shibuya. Владелец: Sony Corp. Дата публикации: 2013-06-11.

Optical semiconductor device lead frame, optical semiconductor device lead frame manufacturing method, and optical semiconductor device

Номер патента: JP5089795B2. Автор: 智鈴木,晃松田,伸菊池,悟座間,良聡小林. Владелец: THE FURUKAW ELECTRIC CO., LTD.. Дата публикации: 2012-12-05.

Substrate for semiconductor device and its manufacturing method, semiconductor device and its manufacturing method

Номер патента: JP6964477B2. Автор: 健太郎金子,順一中村,晴信佐藤,元中西,孝治渡邊. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2021-11-10.

Semiconductor device and manufacturing mehtod thereof

Номер патента: US20190206854A1. Автор: Yu-Lin Chu,Hsi-Yu Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-07-04.

Semiconductor device with improved electrostatic discharge or electro-over stress protection

Номер патента: US11450657B2. Автор: Yu-Lin Chu,Hsi-Yu Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-20.

Semiconductor device

Номер патента: US20170287932A1. Автор: Min Sik Jang. Владелец: SK hynix Inc. Дата публикации: 2017-10-05.

Methods, apparatus, and system for a semiconductor device comprising gates with short heights

Номер патента: US20190355615A1. Автор: Hui Zang,John Zhang,Jinping Liu,Jiehui SHU,Haigou Huang,Garo Jacques DERDERIAN. Владелец: Globalfoundries Inc. Дата публикации: 2019-11-21.

Semiconductor device and manufacturing method thereof

Номер патента: US11869949B2. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-09.

Self-Aligned Structure For Semiconductor Devices

Номер патента: US20230386933A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Kuan-Ting Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Self-aligned structure for semiconductor devices

Номер патента: US11837504B2. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Shi Ning Ju,Kuan-Ting Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-05.

Post gate dielectric processing for semiconductor device fabrication

Номер патента: US20230411220A1. Автор: Yen-Ming Chen,Hui-Chi CHEN,Chia-Wei Chen,Feng-Cheng Yang,Kuo-Feng Yu,Jian-Hao Chen,Shih-Hao Lin,Shan-Mei Liao,Chih-Yu Hsu,Cheng Hong Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-21.

Light sensing element, semiconductor device, electronic equipment, manufacturing method of light sensing element, and manufacturing method of semiconductor device

Номер патента: US20120081638A1. Автор: Hiroshi Yumoto,Hideo Yamagata,Yusuke Murakawa,Shuji Yoneda. Владелец: Sony Corp. Дата публикации: 2012-04-05.

Semiconductor device and manufacturing method thereof

Номер патента: US20240088245A1. Автор: Georgios Vellianitis. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-14.

Silicon carbide semiconductor device and manufacturing method therefor

Номер патента: US20240170540A1. Автор: Jun Yuan. Владелец: Hubei Jiufengshan Laboratory. Дата публикации: 2024-05-23.

Silicon carbide semiconductor device and manufacturing method therefor

Номер патента: EP4376056A1. Автор: Jun Yuan. Владелец: Hubei Jiufengshan Laboratory. Дата публикации: 2024-05-29.

Semiconductor device and manufacture thereof

Номер патента: US20180351001A1. Автор: Hai Yang Zhang,Erhu ZHENG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-12-06.

Semiconductor device and manufacturing mehod thereof

Номер патента: US20170125599A1. Автор: Shao-Hui Wu,Chi-Fa Ku,Chen-Bin Lin,Zhi-Biao Zhou,hai-biao Yao. Владелец: United Microelectronics Corp. Дата публикации: 2017-05-04.

Semiconductor device and manufacturing method thereof

Номер патента: US20110073934A1. Автор: Shunpei Yamazaki,Tamae Takano,Tetsuya Kakehata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-03-31.

Semiconductor device and manufacturing method thereof

Номер патента: US20110291173A1. Автор: Shunpei Yamazaki,Tamae Takano,Tetsuya Kakehata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-12-01.

DEPOSITION METHOD AND A DEPOSITION APPARATUS OF FINE PARTICLES, A FORMING METHOD AND A FORMING APPARATUS OF CARBON NANOTUBES, AND A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20130109170A1. Автор: Awano Yuji,Shimizu Noriyoshi,Sato Shintaro. Владелец: FUJITSU LIMITED. Дата публикации: 2013-05-02.

Semiconductor device and its manufacturing method thereof, mask for semiconductor manufacture, and optical proximity correction method

Номер патента: US20130249597A1. Автор: Yusaku Ono,Hironobu Taoka. Владелец: Renesas Electronics Corp. Дата публикации: 2013-09-26.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND MANUFACTURING METHODS THEREOF

Номер патента: US20210021097A1. Автор: Hashimoto Takuya,OKAHISA Eiichiro,Kobayashi Suguru,Matsushita Shigeru,Nakazawa Katsuya,Uehara Sumio,Yumoto Kazuhito. Владелец: . Дата публикации: 2021-01-21.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер патента: US20220045093A1. Автор: LEE Nam Jae. Владелец: SK HYNIX INC.. Дата публикации: 2022-02-10.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Номер патента: US20180053744A1. Автор: TANIGUCHI Katsumi. Владелец: . Дата публикации: 2018-02-22.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Номер патента: US20200202940A1. Автор: PARK Eun Young. Владелец: SK HYNIX INC.. Дата публикации: 2020-06-25.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Номер патента: US20170263535A1. Автор: Nakamura Hideyo,NAKANO Hayato. Владелец: . Дата публикации: 2017-09-14.

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND MANUFACTURING METHODS THEREOF

Номер патента: US20190305511A1. Автор: Hashimoto Takuya,OKAHISA Eiichiro,Kobayashi Suguru,Matsushita Shigeru,Nakazawa Katsuya,Uehara Sumio,Yumoto Kazuhito. Владелец: . Дата публикации: 2019-10-03.

Semiconductor device and its manufacture method, lead frame and its manufacture method

Номер патента: CN106847782A. Автор: 林真太郎. Владелец: Shinko Electric Co Ltd. Дата публикации: 2017-06-13.

A kind of semiconductor devices and its manufacturing method and electronic device

Номер патента: CN108346658A. Автор: 李勇. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-07-31.

Semiconductor device and its manufacturing method, lead frame and its manufacturing method

Номер патента: JP3007833B2. Автор: 和人辻,義之米田,英治迫田,政一織茂,隆司埜本,正徳小野寺. Владелец: Fujitsu Ltd. Дата публикации: 2000-02-07.

a manufacturing method of semiconductor device and a manufacturing method of a reflective type micro liquid crystal display using the same

Номер патента: KR100356621B1. Автор: 박진우,이상열. Владелец: 아남반도체 주식회사. Дата публикации: 2002-10-18.

A semiconductor device and a manufacturing method for a metal-insulator-metal capacitor of semiconductor device

Номер патента: KR100431810B1. Автор: 김길호. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2004-05-17.

Method, non-polar semiconductor device and its manufacturing method of the nonpolar gallium nitride-based semiconductor of manufacture

Номер патента: CN104205297B. Автор: 崔承奎,金材宪,郑廷桓. Владелец: Seoul Viosys Co Ltd. Дата публикации: 2018-06-15.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, CIRCUIT BOARD, ELECTRONIC DEVICE

Номер патента: JP4085788B2. Автор: 栄北城,博文井上,英彦黒田,雅洋久保,隆雄山崎,一郎枦山,禎道曽川. Владелец: NEC Corp. Дата публикации: 2008-05-14.

Semiconductor device and its manufacture method, magnetic detection device and electronic compass

Номер патента: CN107658381A. Автор: 石原祐子,瀬良和彦. Владелец: Asahi Kasei EMD Corp. Дата публикации: 2018-02-02.

Method for preventing deterioration of the film quality of a transparent conductive film, semiconductor device and its manufacturing method.

Номер патента: FR2714523B1. Автор: Yutaka C O Fujitsu Li Takizawa,Ken-Ichi C O Fujitsu Lim Yanai. Владелец: Fujitsu Ltd. Дата публикации: 1999-04-16.

Method for preventing deterioration of the film quality of a transparent conductive film, semiconductor device and its manufacturing method.

Номер патента: FR2714523A1. Автор: Takizawa Yutaka,Yanai Ken-Ichi. Владелец: Fujitsu Ltd. Дата публикации: 1995-06-30.

Semiconductor devices and its manufacturing method, liquid discharging head and liquid discharge device

Номер патента: CN109203695A. Автор: 成濑裕章,清水昭宏,江藤徹. Владелец: Canon Inc. Дата публикации: 2019-01-15.

Semiconductor device and its manufacturing method, stacked type semiconductor device, circuit substrate and electronic machine

Номер патента: TW492120B. Автор: Kenji Wada,Terunao Hanaoka. Владелец: Seiko Epson Corp. Дата публикации: 2002-06-21.

Semiconductor device and its manufacturing method, and film carrier tape and its manufacturing method

Номер патента: JPH10173003A. Автор: Kenji Toyosawa,健司豊沢,Mitsuaki Osono,光昭大園. Владелец: Sharp Corp. Дата публикации: 1998-06-26.

Semiconductor device including magnet

Номер патента: US8237164B2. Автор: Masakazu Murakami,Shunpei Yamazaki,Junya Maruyama,Toru Takayama,Toshiji Hamatani,Hideaki Kuwabara,Yumiko Ohno. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-08-07.

Semiconductor device and its manufacturing method and film carrier tape and its manufacturing method

Номер патента: KR100315138B1. Автор: 미쯔아끼 오소노,겐지 토요사와. Владелец: 마찌다 가쯔히꼬. Дата публикации: 2002-02-28.

Lead frame, the manufacturing method, semiconductor device and the manufacturing method

Номер патента: KR100563177B1. Автор: 겐지 오사와,히데또시 구사노. Владелец: 소니 가부시끼 가이샤. Дата публикации: 2006-05-25.

Spherical semiconductor device and the manufacture method for the same and spherical semiconductor device material

Номер патента: AU736457B2. Автор: Josuke Nakata. Владелец: SPHELAR POWER CORP. Дата публикации: 2001-07-26.

Semiconductor devices and their manufacturing methods, as well as power conversion devices

Номер патента: JP7045975B2. Автор: 正行眞舩. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-04-01.

Semiconductor devices and its manufacture method and the electronic equipment including the device

Номер патента: CN107887444A. Автор: 朱慧珑. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2018-04-06.

Semiconductor device module and manufacturing method of semiconductor device module

Номер патента: US20060220232A1. Автор: Kazuya Fujita,Yoshinori Tanida. Владелец: Sharp Corp. Дата публикации: 2006-10-05.

Semiconductor device and its manufacturing method, and display and its manufacturing method

Номер патента: CN101689535A. Автор: 龙谷胜弘. Владелец: Shindo Co Ltd. Дата публикации: 2010-03-31.

Capacitor and manufacturing method thereof

Номер патента: US5568352A. Автор: Cheol-Seong Hwang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1996-10-22.

Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device

Номер патента: US20060273365A1. Автор: Jeffrey Cross,Mineharu Tsukada,Yoshimasa Horii,Angus Kingon,Alexei Gruverman. Владелец: Fujitsu Ltd. Дата публикации: 2006-12-07.

Semiconductor devices and its manufacture method and the electronic equipment including the device

Номер патента: CN107887442A. Автор: 朱慧珑. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2018-04-06.

Substrate for semiconductor device, semiconductor-chip mounting substrate, semiconductor device and its manufacturing method, circuit board, and electronic machine

Номер патента: TW515011B. Автор: Toshiki Nakayama. Владелец: Seiko Epson Corp. Дата публикации: 2002-12-21.

Semiconductor device and its manufacturing method, semiconductor manufacturing mask, and optical proximity processing method

Номер патента: US8103977B2. Автор: Yusaku Ono,Hironobu Taoka. Владелец: Renesas Electronics Corp. Дата публикации: 2012-01-24.

Semiconductor device, leadframe and manufacturing method of semiconductor device

Номер патента: TW200845351A. Автор: Shoji Yasunaga,Yasumasa Kasuya,Motoharu Haga. Владелец: ROHM CO LTD. Дата публикации: 2008-11-16.

Semiconductor device and its manufacturing method, semiconductor manufacturing mask, and optical proximity processing method

Номер патента: KR20120074337A. Автор: 히로노부 타오카,유사쿠 오노. Владелец: 르네사스 일렉트로닉스 가부시키가이샤. Дата публикации: 2012-07-05.

Laser welding method, semiconductor device, and its manufacturing method

Номер патента: JP2009190067A. Автор: 克彦吉原,Katsuhiko Yoshihara. Владелец: Fuji Electric Device Technology Co Ltd. Дата публикации: 2009-08-27.

Semiconductor device and the manufacture method of semiconductor device

Номер патента: CN103579347B. Автор: 江间泰示,藤田和司,堀充明,鸟居泰伸. Владелец: Fujitsu Semiconductor Ltd. Дата публикации: 2016-12-28.

Light emitting device, semiconductor device, and its manufacturing method

Номер патента: EP1970968A1. Автор: Kazuhiro Kamada. Владелец: Nichia Corp. Дата публикации: 2008-09-17.

Semiconductor device module and manufacturing method of semiconductor device module

Номер патента: KR20060105487A. Автор: 요시노리 타니다,카주야 후지타. Владелец: 샤프 가부시키가이샤. Дата публикации: 2006-10-11.

Semiconductor device and its manufacturing method and inspection method

Номер патента: JP4610447B2. Автор: 義英田崎. Владелец: Oki Semiconductor Co Ltd. Дата публикации: 2011-01-12.

Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine

Номер патента: CN1405805A. Автор: 渡边吉祥. Владелец: Seiko Epson Corp. Дата публикации: 2003-03-26.

Semiconductor device and the manufacture method of semiconductor device

Номер патента: CN106133915A. Автор: 原田祐一,星保幸,木下明将,大西泰彦,原田祐. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-11-16.

A kind of semiconductor devices and its manufacturing method, electronic device

Номер патента: CN105448833B. Автор: 赵猛. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-09-25.

TERMINAL LAND FRAME AND MANUFACTURING METHOD THEREOF, AND RESIN-ENCLOSED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: JP3916352B2. Автор: 幸雄山口. Владелец: Panasonic Corp. Дата публикации: 2007-05-16.

A kind of exposure method, exposure machine, semiconductor devices and its manufacturing method

Номер патента: CN110361937A. Автор: 樊春华. Владелец: Shanghai Micro Electronics Equipment Co Ltd. Дата публикации: 2019-10-22.

Semiconductor device and the manufacture method of semiconductor device

Номер патента: CN106128946A. Автор: 小野泽勇一,小野泽勇,吉村尚,尾崎大辅,栗林秀直,仲野逸人. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-11-16.

Semiconductor device and its manufacturing method, and display and its manufacturing method

Номер патента: EP2151862A1. Автор: Katsuhiro Ryutani. Владелец: Shindo Company Ltd. Дата публикации: 2010-02-10.

Substrates for semiconductor devices and their manufacturing methods, semiconductor devices

Номер патента: JP6846484B2. Автор: 佑也五郎丸,真幸林田. Владелец: Maxell Holdings Ltd. Дата публикации: 2021-03-24.

Film carrier tapes, semiconductor assemblies, semiconductor devices and their manufacturing methods, mounting substrates and electronic devices

Номер патента: KR20000064743A. Автор: 노부아키 하시모토. Владелец: 야스카와 히데아키. Дата публикации: 2000-11-06.

Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine

Номер патента: CN100388395C. Автор: 渡边吉祥. Владелец: Seiko Epson Corp. Дата публикации: 2008-05-14.

Method for forming quantum dot, quantum semiconductor device, and its manufacturing method

Номер патента: EP1507293A1. Автор: Toshio Ohshima,Hai-zhi Fujitsu Limited SONG. Владелец: Fujitsu Ltd. Дата публикации: 2005-02-16.

Semiconductor device, SRAM, and manufacturing method of semiconductor device

Номер патента: JP4947890B2. Автор: 有一平野,隆志一法師. Владелец: Renesas Electronics Corp. Дата публикации: 2012-06-06.

The manufacturing method of semiconductor devices and the manufacturing method of memory

Номер патента: CN109461734A. Автор: 周俊,李赟,罗清威. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2019-03-12.

Vertical type semiconductor device and its manufacturing method and operating method

Номер патента: CN104037188B. Автор: 崔康植. Владелец: Hynix Semiconductor Inc. Дата публикации: 2018-06-26.

Semiconductor devices and the manufacture method of semiconductor devices

Номер патента: CN103534809B. Автор: 阿部和. Владелец: Fuji Electric Co Ltd. Дата публикации: 2016-08-17.

Semiconductor device and its manufacturing method, system and method for supporting design thereof, and method for verifying performance thereof

Номер патента: JP2006324443A. Автор: Mitsusachi Katsusawa,光幸勝沢. Владелец: NEC Electronics Corp. Дата публикации: 2006-11-30.

Semiconductor device and its manufacturing method, and electronic device

Номер патента: WO2003096421A1. Автор: Yasushi Morita,Takashi Nagano. Владелец: SONY CORPORATION. Дата публикации: 2003-11-20.

Semiconductor device test circuit, semiconductor device, and its manufacturing method

Номер патента: US8407539B2. Автор: Satoshi Ishizuka. Владелец: Renesas Electronics Corp. Дата публикации: 2013-03-26.

Semiconductor device, semiconductor device terminal and manufacturing method thereof

Номер патента: CN104332488A. Автор: 王根毅,钟圣荣,邓小社,周东飞. Владелец: Wuxi CSMC Semiconductor Co Ltd. Дата публикации: 2015-02-04.

Power semiconductor device and its manufacturing method and power conversion device

Номер патента: DE102019211221B4. Автор: Yoshihisa Uchida,Yo Tanaka,Yoshiaki Takewaki. Владелец: Mitsubishi Electric Corp. Дата публикации: 2023-06-29.

Semiconductor device, tape carrier, manufacturing method thereof, circuit board, electronic device, and tape carrier manufacturing apparatus

Номер патента: JP3536728B2. Автор: 伸晃橋元. Владелец: Seiko Epson Corp. Дата публикации: 2004-06-14.

Semiconductor device and its manufacturing method, power-converting device

Номер патента: CN108886055A. Автор: 吉田基,冈部博明,须贺原和之. Владелец: Mitsubishi Electric Corp. Дата публикации: 2018-11-23.

Semiconductor device and its manufacturing method

Номер патента: US20120268981A1. Автор: Toshihiro Tanaka,Satoru Hanzawa,Nozomu Matsuzaki,Fumihiko Nitta. Владелец: Renesas Electronics Corp. Дата публикации: 2012-10-25.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20130143359A1. Автор: Abe Yoshiyuki,HIGASHINO Tomoko,MIYAZAKI Chuichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-06-06.

Semiconductor device and its manufacture method

Номер патента: US20130154102A1. Автор: Sadahiro Kishii,Yasushi Kobayashi,Masato Tanaka,Yoshihiro Nakata,Tsuyoshi Kanki,Akio Rokugawa. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2013-06-20.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20130161753A1. Автор: Shinohara Hirofumi,IWAMATSU Toshiaki,YOSHIMORI Hiromasa. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-06-27.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20130164927A1. Автор: Chakihara Hiraku,Ishii Yasushi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2013-06-27.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD

Номер патента: US20130171791A1. Автор: SUZUKI Toshihide,JOSHIN Kazukiyo,Shima Masashi. Владелец: FUJITSU SEMICONDUCTOR LIMITED. Дата публикации: 2013-07-04.

OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

Номер патента: US20130200423A1. Автор: FU Jenn-Hwa,Huang Hsin-Hsiung,YU Tz-Chiang. Владелец: EPISTAR CORPORATION. Дата публикации: 2013-08-08.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20130240919A1. Автор: Yoo Myung Cheol,Park Moo Keun,Oh Se Jong. Владелец: VERTICLE, INC.. Дата публикации: 2013-09-19.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20130256860A1. Автор: Sato Yukihiro,Koike Nobuya. Владелец: . Дата публикации: 2013-10-03.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20130277635A1. Автор: TANAKA Toshihiro,Matsuzaki Nozomu,HANZAWA Satoru,NITTA Fumihiko. Владелец: . Дата публикации: 2013-10-24.

WAFER LEVEL PACKAGED GAN POWER SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

Номер патента: US20130292689A1. Автор: Kim Dong-Young,Yoon Hyung Sup,Kim Hae Cheon,Nam Eun Soo,CHANG Woo Jin,AHN Ho Kyun,JU Chull Won,LEE Jong Min,LIM Jong-Won,KANG Dong Min,LEE Sang-Heung. Владелец: . Дата публикации: 2013-11-07.

Discrete semiconductor device package and manufacturing method

Номер патента: US20130320551A1. Автор: Rolf Brenner,Roelf Anco Jacob Groenhuis,Sven Walczyk,Emiel de Bruin,Tim BOETTCHER. Владелец: NXP BV. Дата публикации: 2013-12-05.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20140035027A1. Автор: Chakihara Hiraku,Ishii Yasushi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2014-02-06.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20140054692A1. Автор: Matsuura Nobuyoshi,Shiraishi Masaki,UNO Tomoaki. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2014-02-27.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20170005089A1. Автор: Matsuura Nobuyoshi,Shiraishi Masaki,UNO Tomoaki. Владелец: . Дата публикации: 2017-01-05.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20160005854A1. Автор: Matsuura Nobuyoshi,Shiraishi Masaki,UNO Tomoaki. Владелец: . Дата публикации: 2016-01-07.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20180005890A1. Автор: Xiao Deyuan. Владелец: . Дата публикации: 2018-01-04.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20160013051A1. Автор: Zhao Jie,ZENG Yizhi. Владелец: . Дата публикации: 2016-01-14.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20180019303A1. Автор: YOKOTA Kazuki. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2018-01-18.

Charge-Compensation Semiconductor Device and a Manufacturing Method Therefor

Номер патента: US20190019887A1. Автор: Mauder Anton,Schulze Hans-Joachim,Hirler Franz,Wahl Uwe,Willmeroth Armin,Pfirsch Frank Dieter. Владелец: . Дата публикации: 2019-01-17.

Semiconductor device and a manufacturing method thereof

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20190025708A1. Автор: Shibuya Takashi,SHIRATO Akinori. Владелец: NIKON CORPORATION. Дата публикации: 2019-01-24.

RESIN-ENCAPSULATED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20170033056A1. Автор: Kasuya Yasumasa,Haga Motoharu,Yasunaga Shoji. Владелец: . Дата публикации: 2017-02-02.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20170033074A1. Автор: YAJIMA Akira. Владелец: . Дата публикации: 2017-02-02.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20160035739A1. Автор: Chakihara Hiraku,Saito Kentaro. Владелец: . Дата публикации: 2016-02-04.

Semiconductor device and related manufacturing method

Номер патента: US20160035826A1. Автор: Fumitake Mieno. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-02-04.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер патента: US20190043729A1. Автор: Hung Ching-Wen. Владелец: . Дата публикации: 2019-02-07.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20170047437A1. Автор: KAWAGUCHI Hiroshi,Miyamoto Hironobu,Nakayama Tatsuo,MASUMOTO Ichiro,MIYAKE Shinichi. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2017-02-16.

SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

Номер патента: US20220068792A1. Автор: TZU HSIANG Lin,CHIH HAO Chen,WEI CHE Wu,YING CHIEH Chen. Владелец: . Дата публикации: 2022-03-03.

Semiconductor Device and a Manufacturing Method Therefor

Номер патента: US20190051647A1. Автор: Hirler Franz,Weyers Joachim,Treiber Maximilian. Владелец: . Дата публикации: 2019-02-14.

Field-Effect Semiconductor Device and a Manufacturing Method Therefor

Номер патента: US20190051742A1. Автор: Hans Weber,Andreas Riegler,Christian Fachmann,Gabor Mezoesi. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2019-02-14.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20160064344A1. Автор: YAJIMA Akira. Владелец: . Дата публикации: 2016-03-03.

Semiconductor device and a manufacturing method thereof

Номер патента: US20160064654A1. Автор: Takashi Tonegawa,Eiji Kariyada,Takayasu Kazamatsuri. Владелец: Renesas Electronics Corp. Дата публикации: 2016-03-03.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20180061964A1. Автор: TOKITA Hirofumi,OGATA Tamotsu. Владелец: . Дата публикации: 2018-03-01.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20180061997A1. Автор: Kawashima Yoshiyuki,INOUE Masao,YOSHITOMI Atsushi. Владелец: . Дата публикации: 2018-03-01.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD

Номер патента: US20180068967A1. Автор: Chen Chun-Jen,LAI Yi-Jen,Cheng Hsi-Kuei,LEE Li-Guo,LIU Yung-Sheng,LIU Yi-Chen. Владелец: . Дата публикации: 2018-03-08.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20150076566A1. Автор: KAMINO Takeshi. Владелец: . Дата публикации: 2015-03-19.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20180076206A1. Автор: Kawashima Yoshiyuki,YOSHITOMI Atsushi. Владелец: . Дата публикации: 2018-03-15.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20180082944A1. Автор: Maeda Shinichi. Владелец: . Дата публикации: 2018-03-22.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHODS

Номер патента: US20160093513A1. Автор: Hong Zhongshan. Владелец: . Дата публикации: 2016-03-31.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20160093649A1. Автор: Huang Feng,Wang Xuemei,CHEN FUGANG,LIN Shuaibing. Владелец: . Дата публикации: 2016-03-31.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20170092498A1. Автор: Li Yong. Владелец: . Дата публикации: 2017-03-30.

Semiconductor device structure and manufacturing method thereof

Номер патента: US20160111536A1. Автор: I-Chih Chen,Chih-Mu Huang,Fu-Tsun Tsai,Chih-Ming Hsieh,Yung-Fa LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-04-21.

OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

Номер патента: US20140206115A1. Автор: YU Tz Chiang,FU Jenn Hwa,HUANG Hsin Hsiung. Владелец: EPISTAR CORPORATION. Дата публикации: 2014-07-24.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20170125397A1. Автор: Zhou Fei. Владелец: . Дата публикации: 2017-05-04.

DISCRETE SEMICONDUCTOR DEVICE PACKAGE AND MANUFACTURING METHOD

Номер патента: US20150140739A1. Автор: GROENHUIS Roelf Anco Jacob,WALCZYK Sven,Brenner Rolf,BOETTCHER Tim,DE BRUIN Emiel. Владелец: . Дата публикации: 2015-05-21.

Semiconductor Device Structure and Manufacturing Method

Номер патента: US20190131264A1. Автор: Chen Chun-Jen,LAI Yi-Jen,Cheng Hsi-Kuei,LEE Li-Guo,LIU Yung-Sheng,LIU Yi-Chen. Владелец: . Дата публикации: 2019-05-02.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20160141241A1. Автор: Nakajima Akira,Yamamoto Yoshiaki. Владелец: . Дата публикации: 2016-05-19.

RESIN-ENCAPSULATED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20160155689A1. Автор: Kasuya Yasumasa,Haga Motoharu,Yasunaga Shoji. Владелец: . Дата публикации: 2016-06-02.

Semiconductor Device and a Manufacturing Method Thereof

Номер патента: US20160155747A1. Автор: MIHARA Tatsuyoshi. Владелец: . Дата публикации: 2016-06-02.

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20200142320A1. Автор: SHIMOYAMA Takachika. Владелец: NIKON CORPORATION. Дата публикации: 2020-05-07.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер патента: US20170154882A1. Автор: Kalnitsky Alexander,Lee Chen-Yi,AL-SHYOUKH Mohammad,Huang Shih-Fen,Wang Pei-Lun,Jong Yu-Chang,HO DAH-CHUEN. Владелец: . Дата публикации: 2017-06-01.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20210184054A1. Автор: Usami Tatsuya,Miyamoto Hironobu,NAKAYAMA Tomoo,SAWADA Masami. Владелец: . Дата публикации: 2021-06-17.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20140239367A1. Автор: Chakihara Hiraku,Saito Kentaro. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2014-08-28.

Semiconductor device and its manufacturing method

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20160172419A1. Автор: KAMINO Takeshi. Владелец: . Дата публикации: 2016-06-16.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20140252456A1. Автор: Liao Zhongping. Владелец: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD. Дата публикации: 2014-09-11.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20190164986A1. Автор: TSUDA Shibun. Владелец: . Дата публикации: 2019-05-30.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20160181184A1. Автор: Maekawa Kazuyoshi,Matsumoto Masahiro,KAWANO Yuichi. Владелец: . Дата публикации: 2016-06-23.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20160181301A1. Автор: Terada Takashi,HORI Shinya. Владелец: . Дата публикации: 2016-06-23.

ULTRAHIGH VOLTAGE RESISTOR, SEMICONDUCTOR DEVICE, AND THE MANUFACTURING METHOD THEREOF

Номер патента: US20160181351A1. Автор: KIM Young Bae,KIM Kwang Il. Владелец: MAGNACHIP SEMICONDUCTOR, LTD.. Дата публикации: 2016-06-23.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20170179142A1. Автор: Zhang Yiying,ZHENG Erhu. Владелец: . Дата публикации: 2017-06-22.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20150187606A1. Автор: Sato Yukihiro,Koike Nobuya. Владелец: . Дата публикации: 2015-07-02.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20150187736A1. Автор: LIU Yao,HUANG Herb He,Chen Fucheng. Владелец: . Дата публикации: 2015-07-02.

Semiconductor Device Package and Manufacturing Method Thereof

Номер патента: US20170186679A1. Автор: Do Won Chul,Kelly Michael G.,Hiner David Jon,Huemoeller Ronald Patrick. Владелец: . Дата публикации: 2017-06-29.

Semiconductor Device and Corresponding Manufacturing Method

Номер патента: US20180190651A1. Автор: Siemieniec Ralf,Konrath Jens Peter,Draghici Mihai. Владелец: . Дата публикации: 2018-07-05.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20180197753A1. Автор: Maekawa Kazuyoshi,Matsumoto Masahiro,KAWANO Yuichi. Владелец: . Дата публикации: 2018-07-12.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20180198001A1. Автор: Amo Atsushi. Владелец: . Дата публикации: 2018-07-12.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20170200655A1. Автор: Wang Liang,Zhao Jie,LIU Jia Lei. Владелец: . Дата публикации: 2017-07-13.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20170200808A1. Автор: ZHANG Hai Yang,Zheng Zhe. Владелец: . Дата публикации: 2017-07-13.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20190198660A1. Автор: KACHI Tsuyoshi. Владелец: . Дата публикации: 2019-06-27.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20170207233A1. Автор: Shinohara Masaaki,MIHARA Tatsuyoshi. Владелец: . Дата публикации: 2017-07-20.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20160218108A1. Автор: TOKITA Hirofumi,OGATA Tamotsu. Владелец: . Дата публикации: 2016-07-28.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD

Номер патента: US20150221737A1. Автор: LIAO Chen-Liang,HUANG Yi-Lii,CHEN Chih-Hsiao,LI Yao-Yu. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd. Дата публикации: 2015-08-06.

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20190204752A1. Автор: Shibuya Takashi,SHIRATO Akinori. Владелец: NIKON CORPORATION. Дата публикации: 2019-07-04.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер патента: US20160225904A1. Автор: Chang Shih-Chieh,Liao Chin-I. Владелец: . Дата публикации: 2016-08-04.

Semiconductor device and a manufacturing method thereof

Номер патента: US20170221942A1. Автор: Takashi Terada,Shinya Hori. Владелец: Renesas Electronics Corp. Дата публикации: 2017-08-03.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер патента: US20210249275A1. Автор: Hung Ching-Wen. Владелец: . Дата публикации: 2021-08-12.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20140319618A1. Автор: Shinohara Hirofumi,IWAMATSU Toshiaki,YOSHIMORI Hiromasa. Владелец: . Дата публикации: 2014-10-30.

On-Chip Antennas for Semiconductor Devices and Related Manufacturing Methods

Номер патента: US20190221531A1. Автор: Meyer Thorsten,Wojnowski Maciej,Hartner Walter. Владелец: . Дата публикации: 2019-07-18.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20150243843A1. Автор: Yoo Myung Cheol,Park Moo Keun,Oh Se Jong. Владелец: . Дата публикации: 2015-08-27.

Semiconductor device and a manufacturing method thereof

Номер патента: US20150249102A1. Автор: Takashi Terada,Shinya Hori. Владелец: Renesas Electronics Corp. Дата публикации: 2015-09-03.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20140332878A1. Автор: Matsuura Nobuyoshi,Shiraishi Masaki,UNO Tomoaki. Владелец: . Дата публикации: 2014-11-13.

RESIN-ENCAPSULATED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20140332944A1. Автор: Kasuya Yasumasa,Haga Motoharu,Yasunaga Shoji. Владелец: . Дата публикации: 2014-11-13.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер патента: US20170243865A1. Автор: Kalnitsky Alexander,Lee Chen-Yi,AL-SHYOUKH Mohammad,Huang Shih-Fen,Wang Pei-Lun,Jong Yu-Chang,HO DAH-CHUEN. Владелец: . Дата публикации: 2017-08-24.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD

Номер патента: US20150262953A1. Автор: Chen Chun-Jen,LAI Yi-Jen,Cheng Hsi-Kuei,LEE Li-Guo,LIU Yung-Sheng,LIU Yi-Chen. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd. Дата публикации: 2015-09-17.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD

Номер патента: US20150262955A1. Автор: Chen Chun-Jen,LAI Yi-Jen,Cheng Hsi-Kuei,LEE Li-Guo,LIU Yung-Sheng,LIU Yi-Chen. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd. Дата публикации: 2015-09-17.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20160268445A1. Автор: Amo Atsushi. Владелец: . Дата публикации: 2016-09-15.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20150279607A1. Автор: Xiao Deyuan. Владелец: . Дата публикации: 2015-10-01.

THYRISTOR SEMICONDUCTOR DEVICE AND CORRESPONDING MANUFACTURING METHOD

Номер патента: US20200258981A1. Автор: Guitard Nicolas. Владелец: . Дата публикации: 2020-08-13.

SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

Номер патента: US20170279005A1. Автор: Lee Rong Ren,LEE Shih Chang,CHEN Meng Yang. Владелец: . Дата публикации: 2017-09-28.

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20200264516A1. Автор: Shibuya Takashi,SHIRATO Akinori. Владелец: NIKON CORPORATION. Дата публикации: 2020-08-20.

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20180275533A1. Автор: Shibuya Takashi,SHIRATO Akinori. Владелец: NIKON CORPORATION. Дата публикации: 2018-09-27.

Semiconductor device and a manufacturing method thereof

Номер патента: US20160293427A1. Автор: Masaaki Shinohara,Tatsuyoshi MIHARA. Владелец: Renesas Electronics Corp. Дата публикации: 2016-10-06.

PATTERNED STRUCTURE OF A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20160293726A1. Автор: Huang Rai-Min,Huang Tong-Jyun,Tseng I-Ming,Li Kuan-Hsien. Владелец: . Дата публикации: 2016-10-06.

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20180284619A1. Автор: Shibuya Takashi,SHIRATO Akinori. Владелец: NIKON CORPORATION. Дата публикации: 2018-10-04.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20180286881A1. Автор: Hashimoto Takashi,YAMAKOSHI HIDEAKI,ABE SHINICHIRO,Omizu Yuto. Владелец: . Дата публикации: 2018-10-04.

SEMICONDUCTOR DEVICE, RESISTOR AND MANUFACTURING METHOD OF THE SAME

Номер патента: US20150303107A1. Автор: EOM Dae Sung. Владелец: . Дата публикации: 2015-10-22.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20170294284A1. Автор: Xiao Deyuan. Владелец: . Дата публикации: 2017-10-12.

Field-Effect Semiconductor Device and a Manufacturing Method Therefor

Номер патента: US20180294333A1. Автор: Weber Hans,Riegler Andreas,Fachmann Christian,Mezoesi Gabor. Владелец: . Дата публикации: 2018-10-11.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20180308884A1. Автор: KAMINO Takeshi,GOTO Yotaro,TAKAHASHI Fumitoshi. Владелец: . Дата публикации: 2018-10-25.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20150325506A1. Автор: Sato Yukihiro,Koike Nobuya. Владелец: . Дата публикации: 2015-11-12.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20160329427A1. Автор: Xiao Deyuan. Владелец: . Дата публикации: 2016-11-10.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20170323983A1. Автор: Amo Atsushi. Владелец: . Дата публикации: 2017-11-09.

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20200326638A1. Автор: Shibuya Takashi,SHIRATO Akinori. Владелец: NIKON CORPORATION. Дата публикации: 2020-10-15.

SEMICONDUCTOR DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF

Номер патента: US20190326161A1. Автор: Do Won Chul,Kelly Michael G.,Hiner David Jon,Huemoeller Ronald Patrick. Владелец: . Дата публикации: 2019-10-24.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20170345925A1. Автор: SYO Toshiyuki. Владелец: . Дата публикации: 2017-11-30.

EXPOSURE APPARATUS AND EXPOSURE METHOD, AND FLAT PANEL DISPLAY MANUFACTURING METHOD

Номер патента: US20180341183A1. Автор: SHIMOYAMA Takachika. Владелец: NIKON CORPORATION. Дата публикации: 2018-11-29.

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD

Номер патента: US20160359010A1. Автор: LIAO Chen-Liang,HUANG Yi-Lii,CHEN Chih-Hsiao,LI Yao-Yu. Владелец: Taiwan Semiconductor Manufacturing Co.,Ltd.. Дата публикации: 2016-12-08.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20170358539A1. Автор: TSUNEMINE Yoshikazu. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2017-12-14.

SEMICONDUCTOR DEVICE, RESISTOR AND MANUFACTURING METHOD OF THE SAME

Номер патента: US20150371988A1. Автор: EOM Dae Sung. Владелец: . Дата публикации: 2015-12-24.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер патента: US20190348429A1. Автор: Hashimoto Takashi,YAMAKOSHI HIDEAKI,ABE SHINICHIRO,Omizu Yuto. Владелец: . Дата публикации: 2019-11-14.

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер патента: US20160372553A1. Автор: Xiao Deyuan. Владелец: . Дата публикации: 2016-12-22.

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Номер патента: US20180358301A1. Автор: TSUNEMINE Yoshikazu. Владелец: RENESAS ELECTRONICS CORPORATION. Дата публикации: 2018-12-13.

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

Номер патента: US20170373055A1. Автор: Matsuura Nobuyoshi,Shiraishi Masaki,UNO Tomoaki. Владелец: . Дата публикации: 2017-12-28.

Exposure apparatus and exposure method, and flat panel display manufacturing method

Номер патента: US20200363730A1. Автор: Takashi Shibuya,Akinori Shirato. Владелец: Nikon Corp. Дата публикации: 2020-11-19.

Semiconductor device and its manufacturing method

Номер патента: EP1331664A4. Автор: Hisaya Sakai,Noriyoshi Shimizu,Nobuyuki Ohtsuka. Владелец: Fujitsu Ltd. Дата публикации: 2008-10-08.

Semiconductor device and the manufacturing method thereof

Номер патента: TW490718B. Автор: Hideaki Hirabayashi,Tetsuo Matsuda,Hisashi Kaneko,Hiroshi Toyoda. Владелец: Toshiba Corp. Дата публикации: 2002-06-11.

Semiconductor device and the manufacturing method

Номер патента: KR960002990B1. Автор: 교시 마쓰바라,다다시 야마우라,도시마사 기하라,노리시게 가와시모. Владелец: 가부시끼가이샤 히다찌 세이사꾸쇼. Дата публикации: 1996-03-02.

Semiconductor device inductor and manufacturing method thereof

Номер патента: KR100250225B1. Автор: 이태복. Владелец: 윤종용. Дата публикации: 2000-04-01.

Semiconductor device and its manufacturing method

Номер патента: JPS5534488A. Автор: Kunihiko Hirashima. Владелец: Pioneer Electronic Corp. Дата публикации: 1980-03-11.

Semiconductor device and its manufacturing method

Номер патента: KR0129985B1. Автор: 박규찬,신현국,문종,심태언. Владелец: 김광호. Дата публикации: 1998-04-07.

Semiconductor devices and their manufacturing methods

Номер патента: JP7033445B2. Автор: 光廣咲間,勝秋野. Владелец: Ablic Inc. Дата публикации: 2022-03-10.

Semiconductor device and capacitor manufacturing method including capacitor

Номер патента: KR970063745A. Автор: 요시히로 다카이시. Владелец: 닛폰 덴키 가부시키가이샤. Дата публикации: 1997-09-12.

Semiconductor device and its manufacturing method

Номер патента: JP2007075931A. Автор: Satoshi Inaba,聡稲葉. Владелец: Toshiba Corp. Дата публикации: 2007-03-29.

A cof semiconductor device and a manufacturing method for the same

Номер патента: KR100563502B1. Автор: 세꼬도시하루. Владелец: 샤프 가부시키가이샤. Дата публикации: 2006-03-28.

Semiconductor device and its manufacturing method

Номер патента: KR100910614B1. Автор: 모리유카리,에자키다카유키,히라야마데루오,사사키나오토,오자키히로시,이시카와나츠야. Владелец: 소니 가부시끼 가이샤. Дата публикации: 2009-08-04.

SiGe Semiconductor Device And The Manufacturing Method Thereof

Номер патента: KR100877689B1. Автор: 김상훈,배현철,이상흥. Владелец: 한국전자통신연구원. Дата публикации: 2009-01-09.

Power semiconductor devices and their manufacturing methods

Номер патента: JP6979864B2. Автор: 円丈露野. Владелец: Hitachi Astemo Ltd. Дата публикации: 2021-12-15.

Semiconductor device and the manufacturing method thereof

Номер патента: KR100244812B1. Автор: 후미히코 사토. Владелец: 닛본 덴기 가부시끼가이샤. Дата публикации: 2000-02-15.

Semiconductor device and its manufacturing method

Номер патента: KR100319021B1. Автор: 고바야시다까시,시마모또히로미,우찌노다까시,시바다께오,오오니시가즈히로,다마끼요이찌,기꾸찌도시유끼,이께다다까히데. Владелец: 나시모토 류조. Дата публикации: 2002-06-20.

Semiconductor device and its manufacturing method

Номер патента: KR900008153B1. Автор: 류우이지 이자와,에이지 다게다,야스오 이구라,아게미 하마다. Владелец: 가부시기가이샤 히다찌세이사꾸쇼. Дата публикации: 1990-11-03.

Three-dimensional semiconductor device and its manufacturing method

Номер патента: CN105470260B. Автор: 叶甜春. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2018-09-18.

Semiconductor device and its manufacturing method

Номер патента: KR100520633B1. Автор: 하라다요시나오. Владелец: 마츠시타 덴끼 산교 가부시키가이샤. Дата публикации: 2005-10-11.

Semiconductor device and its manufacturing method

Номер патента: KR100712461B1. Автор: 다이 히사모토,요시미 스도우. Владелец: 가부시끼가이샤 히다치 세이사꾸쇼. Дата публикации: 2007-11-02.

Semiconductor device and its manufacturing method

Номер патента: CN108140675A. Автор: 伊东笃,伊东一笃. Владелец: Sharp Corp. Дата публикации: 2018-06-08.

Complementary semiconductor device and its manufacturing method

Номер патента: KR980006025A. Автор: 아키라 히로키,신지 오다나카. Владелец: 마쓰시타 덴키 산교주식회사. Дата публикации: 1998-03-30.

A semiconductor device and a manufacturing method thereof

Номер патента: KR20150102695A. Автор: 다까시 데라다,신야 호리. Владелец: 르네사스 일렉트로닉스 가부시키가이샤. Дата публикации: 2015-09-07.

Semiconductor device and its manufacturing method

Номер патента: JP2001339011A. Автор: Takashi Kurihara,Masao Aoki,Shigeru Mizuno,茂水野,孝栗原,道夫堀内,Michio Horiuchi,Tomio Nagaoka,富夫永岡,正夫青木. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2001-12-07.

Semiconductor device and its manufacturing method

Номер патента: JPH1056160A. Автор: Yasuo Yamaguchi,Shigenobu Maeda,茂伸前田,Shigeto Maekawa,繁登前川,泰男山口. Владелец: Mitsubishi Electric Corp. Дата публикации: 1998-02-24.

Semiconductor device, and its manufacturing method

Номер патента: JP2008047753A. Автор: Toru Matsumoto,Yoshio Imamura,徹松本,Yoshihiko Minamoto,良彦皆本,圭男今村. Владелец: CMK Corp. Дата публикации: 2008-02-28.

Semiconductor device package and manufacturing method thereof

Номер патента: KR102417710B1. Автор: 김소정. Владелец: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드. Дата публикации: 2022-07-06.

A kind of semiconductor devices and its manufacture method

Номер патента: CN104425384B. Автор: 谢欣云. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-08-01.

Semiconductor device and its manufacturing method

Номер патента: CN1518100A. Автор: ,金志永,朴柄俊. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2004-08-04.

Semiconductor device and its manufacturing method

Номер патента: KR101191818B1. Автор: 준이치 아리요시,아키히로 우스지마,다이지 에마. Владелец: 후지쯔 세미컨덕터 가부시키가이샤. Дата публикации: 2012-10-16.

Semiconductor devices and its manufacture method

Номер патента: CN107039246A. Автор: 郑圣烨,萧养康. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-11.

Semiconductor devices and the manufacturing method thereof

Номер патента: KR100221622B1. Автор: 이욱하. Владелец: 엘지반도체주식회사. Дата публикации: 1999-09-15.

Semiconductor devices and their manufacturing methods

Номер патента: JP6790808B2. Автор: 栄亮伴野. Владелец: Denso Corp. Дата публикации: 2020-11-25.

Semiconductor device and its manufacturing method

Номер патента: KR100544631B1. Автор: 기쿠치고우지. Владелец: 가부시끼가이샤 도시바. Дата публикации: 2006-01-24.

Transverse diffusion metal oxide semiconductor device and its manufacturing method

Номер патента: CN108682690A. Автор: 王猛,喻慧,彭川,杜益成,游步东,黄贤国. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2018-10-19.

Semiconductor device and its manufacture method

Номер патента: CN107680931A. Автор: 邱威鸣,曾健旭,张峰荣. Владелец: Winbond Electronics Corp. Дата публикации: 2018-02-09.

A kind of semiconductor device and its manufacture method

Номер патента: CN104362160B. Автор: 黄峰,陈福刚,王雪梅,林率兵. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-08-25.

Semiconductor device, and its manufacturing method

Номер патента: JP2002158258A. Автор: Koji Yoshida,浩二吉田. Владелец: Sony Corp. Дата публикации: 2002-05-31.

Semiconductor devices and its manufacturing method

Номер патента: CN110085523A. Автор: 都原彻,朴斗铉,白钟植,李志宪,徐成民. Владелец: Amkor Technology Inc. Дата публикации: 2019-08-02.

Semiconductor device and its manufacturing method

Номер патента: KR100496716B1. Автор: 미치오 아사히나,나오히로 모리야,가즈키 마츠모토,주니치 다케우치. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2005-09-30.

Three-dimensional semiconductor devices and its manufacturing method

Номер патента: CN105321952B. Автор: 刘东哲,黄棋铉,延国贤,金东宇,金东谦. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-08-30.

Semiconductor devices and its manufacturing method

Номер патента: CN109786274A. Автор: 吴志伟,林俊成,施应庆,王卜,卢思维,邹贤儒. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-05-21.

Semiconductor device and its manufacturing method

Номер патента: KR100486187B1. Автор: 마나베카즈타카. Владелец: 엘피다 메모리, 아이엔씨.. Дата публикации: 2005-05-03.

Semiconductor device and its manufacturing method

Номер патента: KR102102252B1. Автор: 심재우,박진홍,장성운. Владелец: 성균관대학교 산학협력단. Дата публикации: 2020-04-20.

Semiconductor device and its manufacturing method

Номер патента: KR970053866A. Автор: 요꼬 호리구찌,가오루 나리따,다께오 후지. Владелец: 닛본덴기 가부시끼가이샤. Дата публикации: 1997-07-31.

Semiconductor device and the manufacturing method

Номер патента: KR950006970B1. Автор: 쯔또무 나까자와. Владелец: 아오이 죠이찌. Дата публикации: 1995-06-26.

Light emitting semiconductor device and its manufacture method

Номер патента: CN104508842B. Автор: 安相贞. Владелец: 安相贞. Дата публикации: 2017-06-09.

Semiconductor devices and its manufacturing method

Номер патента: KR920004028B1. Автор: 김성태,최수한. Владелец: 김광호. Дата публикации: 1992-05-22.

Semiconductor device array and manufacturing method thereof

Номер патента: JP4235440B2. Автор: 浩克宮田,朗栗山,和彦福谷,美紀小川,央大倉,オットー・アルブレヒト. Владелец: Canon Inc. Дата публикации: 2009-03-11.

Semiconductor device and its manufacturing method, circuit board, and electronic equipment

Номер патента: JP3573133B2. Автор: 卓也高橋. Владелец: Seiko Epson Corp. Дата публикации: 2004-10-06.

Semiconductor device and its manufacturing method

Номер патента: JPH10116969A. Автор: 宏治金森,Koji Kanamori,Yoshiaki Hisamune,義明久宗. Владелец: NEC Corp. Дата публикации: 1998-05-06.

Crystalline silicon semiconductor device and its manufacturing method

Номер патента: JP2003218030A. Автор: Tadashi Sasaki,信一村松,Shinichi Muramatsu,Fumito Oka,史人岡,唯佐々木. Владелец: Hitachi Cable Ltd. Дата публикации: 2003-07-31.

Epoxy Resin Compositions for Semiconductor Device Sealing and Manufacturing Method Thereof

Номер патента: KR960026689A. Автор: 윤호규,윤제홍. Владелец: 유현식. Дата публикации: 1996-07-22.

Semiconductor device and its manufacturing method

Номер патента: CN1630024A. Автор: 山崎舜平,小山润,早川昌彦,纳光明,滨谷敏次,寺本聪,尾形靖,大谷久. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2005-06-22.

Semiconductor device structure and manufacturing method thereof

Номер патента: KR960009995B1. Автор: 최정혁,권기호,서강덕. Владелец: 김광호. Дата публикации: 1996-07-25.

Semiconductor device and its manufacture method

Номер патента: CN101312209A. Автор: 千成吉. Владелец: Hynix Semiconductor Inc. Дата публикации: 2008-11-26.

Semiconductor Device and the Manufacturing Method thereof

Номер патента: KR100642406B1. Автор: 은병수. Владелец: 주식회사 하이닉스반도체. Дата публикации: 2006-11-08.

High voltage semiconductor device and its manufacturing method

Номер патента: KR0183669B1. Автор: 최영석,유광동. Владелец: 김광호. Дата публикации: 1999-03-20.

Semiconductor device and its manufacturing method

Номер патента: KR100289962B1. Автор: 히로유키 시마. Владелец: 료덴 세미컨덕터 시스템 엔지니어링주식회사. Дата публикации: 2001-05-15.

Semiconductor device and its manufacturing method

Номер патента: JP7140349B2. Автор: 良一片岡. Владелец: Tokai Rika Co Ltd. Дата публикации: 2022-09-21.

Semiconductor devices and its manufacture method

Номер патента: CN103545351B. Автор: �金钟,金钟一. Владелец: Hynix Semiconductor Inc. Дата публикации: 2017-07-21.

Semiconductor device and its manufacturing method

Номер патента: JPS55111135A. Автор: Takeshi Sakashita,Yoshihiro Matsui. Владелец: Mitsubishi Electric Corp. Дата публикации: 1980-08-27.

Three-dimensional semiconductor device and its manufacture method

Номер патента: CN107403803A. Автор: 黄盛珉. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-11-28.

Semiconductor devices and their manufacturing methods

Номер патента: JP6930393B2. Автор: 滋春山上,林　　哲也,林　哲也,亮太田中,俊治丸井,山上　滋春,威倪,圭佑竹本. Владелец: Nissan Motor Co Ltd. Дата публикации: 2021-09-01.

A semiconductor device and its manufacture method

Номер патента: KR970000972B1. Автор: 다까오 후지쯔. Владелец: 아오이 죠이찌. Дата публикации: 1997-01-21.

Structure of semiconductor devices and the manufacturing method thereof

Номер патента: KR100223915B1. Автор: 길경선. Владелец: 엘지반도체주식회사. Дата публикации: 1999-10-15.

Semiconductor device and its manufacturing method

Номер патента: JPH1027887A. Автор: Naoki Kasai,Ichiro Yamamoto,Hiromitsu Namita,一郎山本,博光波田,直記笠井. Владелец: NEC Corp. Дата публикации: 1998-01-27.

Semiconductor devices and their manufacturing methods

Номер патента: JP6931102B2. Автор: 建廷陳,耀庭蔡,修漢廖. Владелец: Winbond Electronics Corp. Дата публикации: 2021-09-01.

Semiconductor device and its manufacturing method

Номер патента: CN100461410C. Автор: 宇佐美光雄. Владелец: HITACHI LTD. Дата публикации: 2009-02-11.

Semiconductor device and the manufacturing method thereof

Номер патента: KR100235957B1. Автор: 전용주. Владелец: 현대전자산업주식회사. Дата публикации: 1999-12-15.

Semiconductor device and its manufacture method

Номер патента: CN106170857A. Автор: 金东吉,邱翰,李吉和,金吉翰,杜文秋,贝杰翰,其王门,翰东和,金杜浑,朴金文,孙山南,可提斯·斯文格. Владелец: Imark Technology Co. Дата публикации: 2016-11-30.

Comprise semiconductor device and the manufacture method thereof of resistor

Номер патента: CN102024822B. Автор: 金建秀,辛镇铉,朴允文,沈载煌. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-03-23.

Semiconductor device and its manufacturing method

Номер патента: JP7189848B2. Автор: 佑樹藤農. Владелец: Toshiba Electronic Devices and Storage Corp. Дата публикации: 2022-12-14.

Semiconductor device and its manufacture method

Номер патента: JPH11121716A. Автор: 泰示江間,Taiji Ema. Владелец: Fujitsu Ltd. Дата публикации: 1999-04-30.

Semiconductor device and its manufacturing method

Номер патента: JP2003158215A. Автор: Akira Takashima,晃高島,浩小野寺,正宇野,Hiroshi Onodera,Tadashi Uno. Владелец: Fujitsu Ltd. Дата публикации: 2003-05-30.

Capacitor for Semiconductor device and the manufacturing method thereof

Номер патента: KR100712355B1. Автор: 김수곤. Владелец: 동부일렉트로닉스 주식회사. Дата публикации: 2007-05-02.

Semiconductor device and there manufacturing method

Номер патента: KR920007450B1. Автор: 다까시 호리. Владелец: 다니이 아끼오. Дата публикации: 1992-09-01.

The semiconductor devices and its manufacture method of reliability and working life with raising

Номер патента: CN104756245B. Автор: D·巴比克,D·弗朗西斯,F·纳瑟-菲利,F·伊杰克阿姆,Q·迪达克,J·斯马特,K·马修斯,F·Y·洛维. Владелец: RFHIC Corp Korea. Дата публикации: 2017-09-22.

Multilayer pad of semiconductor device and its manufacturing method

Номер патента: KR100482364B1. Автор: 안경호,최치영,박형무. Владелец: 삼성전자주식회사. Дата публикации: 2005-09-05.

Semiconductor device and its manufacturing method

Номер патента: CN1173739A. Автор: 金载甲. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1998-02-18.

Semiconductor devices and their manufacturing methods

Номер патента: JP6909666B2. Автор: 尚長田. Владелец: Renesas Electronics Corp. Дата публикации: 2021-07-28.

Semiconductor devices and its manufacture method and memory cell with buried gate structure

Номер патента: CN106941120A. Автор: 金东洙,林成沅,金银贞,张玄鎭,许根,金智炫. Владелец: Hynix Semiconductor Inc. Дата публикации: 2017-07-11.

In-pixel functional liquid form measuring method, in-pixel functional liquid form measuring apparatus and droplet discharge apparatus, electro-optical apparatus manufacturing method, electro-optical apparatus, and electronic apparatus

Номер патента: JP4245054B2. Автор: 寛文酒井,誠阿南. Владелец: Seiko Epson Corp. Дата публикации: 2009-03-25.

Semiconductor device and its manufacturing method

Номер патента: CN108364939A. Автор: 中村弘幸,团野忠敏,锦泽笃志. Владелец: Renesas Electronics Corp. Дата публикации: 2018-08-03.

Light emitting semiconductor device and its manufacturing method

Номер патента: CN104241486B. Автор: 金基石,李相奭,李守烈,林璨默. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-05-25.

Semiconductor devices and its manufacturing method with multiple threshold voltages

Номер патента: CN104766860B. Автор: 蔡腾群,陈德芳,林正堂,王立廷,张惠政. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-08-09.

Semiconductor device and its manufacturing method

Номер патента: CN109860293A. Автор: 王美匀,王朝勋,薛婉容,赵高毅. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-06-07.

Semiconductor device and its manufacturing method

Номер патента: KR910008835B1. Автор: 김의송. Владелец: 김광호. Дата публикации: 1991-10-21.

Semiconductor device and its manufacturing method

Номер патента: CN110211943A. Автор: 栗田洋一郎,田嶋尚之,下川一生. Владелец: Toshiba Memory Corp. Дата публикации: 2019-09-06.

Semiconductor devices and its manufacturing method

Номер патента: CN104217959B. Автор: 金成玟,李东奎,姜智秀,车东镐. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-04-05.

Semiconductor device and its manufacturing method

Номер патента: KR100259075B1. Автор: 김종채. Владелец: 현대반도체주식회사. Дата публикации: 2000-06-15.

Semiconductor device and its manufacturing method

Номер патента: KR100721073B1. Автор: 사또준이찌. Владелец: 소니 가부시끼 가이샤. Дата публикации: 2007-05-23.

Semiconductor devices and their manufacturing methods

Номер патента: JP7074046B2. Автор: 崇功川島,明徳榊原. Владелец: Denso Corp. Дата публикации: 2022-05-24.

Semiconductor device and its manufacture method

Номер патента: CN104347408B. Автор: 肖德元. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-12-26.

Dynamic type semiconductor device and its manufacturing method

Номер патента: KR920006260B1. Автор: 가츠히코 히에다. Владелец: 아오이 죠이치. Дата публикации: 1992-08-01.

Semiconductor device and its manufacture method

Номер патента: KR100252866B1. Автор: 손정환. Владелец: 현대반도체주식회사. Дата публикации: 2000-04-15.

Semiconductor device and its manufacturing method

Номер патента: KR100268453B1. Автор: 구본재. Владелец: 윤종용. Дата публикации: 2000-11-01.

Semiconductor device and its manufacturing method

Номер патента: JP2001339012A. Автор: Nobuyuki Umezaki,信之梅崎. Владелец: NEC Kyushu Ltd. Дата публикации: 2001-12-07.

Semiconductor device and its manufacturing method

Номер патента: JPH1131778A. Автор: Yasuhiro Suzuki,康弘鈴木. Владелец: NEC Corp. Дата публикации: 1999-02-02.

Semiconductor device and the manufacturing method thereof

Номер патента: KR100227766B1. Автор: 도루 야마자끼. Владелец: 닛본덴기 가부시키가이샤. Дата публикации: 1999-11-01.

Semiconductor device and the manufacturing method thereof

Номер патента: KR100244671B1. Автор: 고이치 엔도. Владелец: 사토 후미오. Дата публикации: 2000-02-15.

Insulated gate power semiconductor device and its manufacturing method

Номер патента: JP6980692B2. Автор: デ−ミキエリス，ルカ,コルバシェ，キアラ. Владелец: ABB Schweiz AG. Дата публикации: 2021-12-15.

Semiconductor devices and its manufacturing method

Номер патента: CN103367403B. Автор: 张乃千,裴风丽. Владелец: Suzhou Nexun High Energy Semiconductor Co ltd. Дата публикации: 2019-10-08.

Semiconductor devices and its manufacture method

Номер патента: CN104022151B. Автор: 邓光敏,裴轶. Владелец: SUZHOU JIEXINWEI SEMICONDUCTOR TECHNOLOGY Co Ltd. Дата публикации: 2018-03-02.

Semiconductor devices and its manufacturing method

Номер патента: CN108807524A. Автор: 朱永生,邓光敏,裴轶. Владелец: SUZHOU JIEXINWEI SEMICONDUCTOR TECHNOLOGY Co Ltd. Дата публикации: 2018-11-13.

Semiconductor device and its manufacturing method

Номер патента: JP2006032574A. Автор: Yoshihiro Sato,好弘佐藤. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2006-02-02.

Semiconductor device and its manufacturing method

Номер патента: JP2010021251A. Автор: Katsumi Otani,Takuhiko Son,卓彦孫,克実大谷,Keiko Shimohikari,敬子下光. Владелец: Panasonic Corp. Дата публикации: 2010-01-28.

Semiconductor devices and their manufacturing methods

Номер патента: JP7055087B2. Автор: 真哉赤尾. Владелец: Mitsubishi Electric Corp. Дата публикации: 2022-04-15.

Semiconductor device and its manufacturing method

Номер патента: CN101689479B. Автор: 高藤裕,福岛康守,富安一秀,竹井美智子,斯蒂文·道罗斯. Владелец: Sharp Corp. Дата публикации: 2012-05-23.

A kind of enhanced nitride compound semiconductor device and its manufacture method

Номер патента: CN104051522B. Автор: 程凯. Владелец: SUZHOU JINGZHAN SEMICONDUCTOR CO Ltd. Дата публикации: 2018-05-11.

Semiconductor device and its manufacturing method

Номер патента: KR910007379B1. Автор: 무네나리 가쿠모토,소우이치 이마무라. Владелец: 아오이 죠이치. Дата публикации: 1991-09-25.

Semiconductor device and its manufacturing method

Номер патента: CN108313975A. Автор: 王伟,郑超. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-07-24.

Semiconductor device and its manufacturing method

Номер патента: JP2008047714A. Автор: Hirohisa Yamamoto,裕久山本. Владелец: Elpida Memory Inc. Дата публикации: 2008-02-28.

Semiconductor device and the manufacturing method having semiconductor body on which tixw1-x barrier layer

Номер патента: KR100272019B1. Автор: 아드리안누스 마리아 볼터스 로베르투스,트지베 스와트 에드윈,게라르두스 더크스 알베르투스. Владелец: 코닌클리케 필립스 일렉트로닉스 엔.브이.. Дата публикации: 2000-12-01.

Layout structure, semiconductor device structure and manufacturing method thereof

Номер патента: CN113921712A. Автор: 陈泽勇,张有志,沈安星. Владелец: Guangzhou Yuexin Semiconductor Technology Co Ltd. Дата публикации: 2022-01-11.

Semiconductor device and its manufacturing method

Номер патента: JP2007019129A. Автор: Shigeki Komori,重樹小森. Владелец: Renesas Technology Corp. Дата публикации: 2007-01-25.

Semiconductor device and its manufacturing method with field plate

Номер патента: KR920009751B1. Автор: 다카시 기무라,다이라 마츠나가. Владелец: 아오이 죠이치. Дата публикации: 1992-10-22.

Semiconductor device silicon wire manufacturing method

Номер патента: KR960016237B1. Автор: Sung-Wook Park. Владелец: Hyundai Electronics Ind. Дата публикации: 1996-12-07.

Semiconductor device and its manufacturing method

Номер патента: KR100209250B1. Автор: 히데키 이시이. Владелец: 다니구찌 이찌로오, 기타오카 다카시. Дата публикации: 1999-07-15.

Semiconductor device and its manufacturing method

Номер патента: CN106486530B. Автор: 吉村尚弥,二宫英彰. Владелец: Toshiba Corp. Дата публикации: 2019-09-17.

A semiconductor device and its manufacture method

Номер патента: KR970005717B1. Автор: 다까오 후지쯔. Владелец: 아오이 죠이찌. Дата публикации: 1997-04-19.

Semiconductor devices and its manufacturing method

Номер патента: CN110190058A. Автор: 李赟,薛广杰,曹开玮. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2019-08-30.

Semiconductor device and its manufacture method

Номер патента: CN102867854B. Автор: 山崎舜平,筱原聪始. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-03-01.

Semiconductor device and its manufacturing method

Номер патента: CN1280890C. Автор: 增田秀显,宫岛秀史,中田錬平. Владелец: Toshiba Corp. Дата публикации: 2006-10-18.

Semiconductor device and its manufacturing method

Номер патента: JP2002124627A. Автор: Hiroaki Fujimoto,Nobuitsu Takehashi,信逸竹橋,博昭藤本. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2002-04-26.

SOHI semiconductor device and its manufacturing method

Номер патента: KR100279262B1. Автор: 황창선,양국승. Владелец: 현대전자산업주식회사. Дата публикации: 2001-02-01.

The semiconductor device and the manufacturing method thereof

Номер патента: KR100679224B1. Автор: 김용진,최철종,이희덕. Владелец: 한국전자통신연구원. Дата публикации: 2007-02-05.

Semiconductor device and its manufacturing method

Номер патента: KR100288040B1. Автор: 다케무라야스히코,야마자끼순페이. Владелец: 야마자끼 순페이. Дата публикации: 2001-10-24.

Semiconductor device and its manufacturing method

Номер патента: KR100891269B1. Автор: 오가와츠요시,니시타니유우지,오쿠보라아키히로. Владелец: 소니 가부시끼 가이샤. Дата публикации: 2009-04-06.

Semiconductor devices and their manufacturing methods

Номер патента: JP6824135B2. Автор: 健司鈴木,鈴木　健司,充金田,康一西. Владелец: Mitsubishi Electric Corp. Дата публикации: 2021-02-03.

Semiconductor devices and their manufacturing methods

Номер патента: JP6870546B2. Автор: 雅康石子,順斎藤,正人登尾,石子　雅康. Владелец: Toyota Central R&D Labs Inc. Дата публикации: 2021-05-12.

Transistor of semiconductor device and its manufacturing method

Номер патента: JP2006032895A. Автор: 相敦李,Sang Don Lee. Владелец: Hynix Semiconductor Inc. Дата публикации: 2006-02-02.

Semiconductor device and its manufacturing method

Номер патента: CN105590900B. Автор: 陈明发,陈承先,施应庆,沈文维. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-22.

Semiconductor device and its manufacturing method

Номер патента: CN108630739A. Автор: 福田昌利,本间庄一,本间庄. Владелец: Toshiba Memory Corp. Дата публикации: 2018-10-09.

Semiconductor devices and their manufacturing methods

Номер патента: JP6989426B2. Автор: 一茂河崎. Владелец: Kioxia Corp. Дата публикации: 2022-01-05.

Semiconductor device and its manufacturing method

Номер патента: JPH1041473A. Автор: Mona Eissa,エイッサモナ. Владелец: Texas Instruments Inc. Дата публикации: 1998-02-13.

Semiconductor device and its manufacture method

Номер патента: CN106941097A. Автор: 田中义典,张维哲. Владелец: Winbond Electronics Corp. Дата публикации: 2017-07-11.

Semiconductor device, and its manufacturing method

Номер патента: US8148757B2. Автор: Masayuki Terai,Shinji Fujieda,Akio Toda. Владелец: Renesas Electronics Corp. Дата публикации: 2012-04-03.

Semiconductor device and its manufacturing method

Номер патента: KR100501662B1. Автор: 노부아키 하시모토. Владелец: 세이코 엡슨 가부시키가이샤. Дата публикации: 2005-11-14.

Semiconductor device and its manufacturing method, power generator

Номер патента: CN109728026A. Автор: 周全国,王志东,周丽佳,兰荣华. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2019-05-07.

MASS FLOW CONTROLLER, MASS FLOW CONTROLLER SYSTEM, SUBSTRATE PROCESSING DEVICE, AND GAS FLOW RATE ADJUSTING METHOD

Номер патента: US20120000542A1. Автор: . Владелец: KABUSHIKI KAISHA TOSHIBA. Дата публикации: 2012-01-05.

Manufacturing Method of Semiconductor Film, Manufacturing Method of Semiconductor Device, and Manufacturing Method of Photoelectric Conversion Device

Номер патента: US20120003787A1. Автор: TANAKA Tetsuhiro,KATO Erika. Владелец: . Дата публикации: 2012-01-05.

Substrate processing apparatus, substrate transport method, and semiconductor integrated circuit device manufacturing method

Номер патента: JP5010884B2. Автор: 政利 ▲高▼田. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2012-08-29.

Substrate processing apparatus and semiconductor integrated circuit device manufacturing method

Номер патента: JP4949686B2. Автор: 智佳子松長. Владелец: HITACHI KOKUSAI ELECTRIC INC. Дата публикации: 2012-06-13.

SUBSTRATE CARTRIDGE, SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING SYSTEM, SUBSTRATE-PROCESSING METHOD, CONTROL APPARATUS, AND METHOD OF MANUFACTURING DISPLAY ELEMENT

Номер патента: US20120215338A1. Автор: Inoue Hideya. Владелец: . Дата публикации: 2012-08-23.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001169A1. Автор: Yamazaki Shunpei. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001226A1. Автор: . Владелец: Sanken Electric Co., Ltd.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120003797A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер патента: US20120001200A1. Автор: Yanagihara Manabu,Uemoto Yasuhiro,IKOSHI Ayanori,MORITA TATSUO. Владелец: Panasonic Corporation. Дата публикации: 2012-01-05.

Circuit board, semiconductor device, circuit board manufacturing method, and semiconductor device manufacturing method

Номер патента: JP5593897B2. Автор: 正芳近藤. Владелец: Sumitomo Bakelite Co Ltd. Дата публикации: 2014-09-24.

The cleaning solution of semiconductor device substrate, the cleaning method of semiconductor device substrate, the manufacturing method of semiconductor device substrate and semiconductor device substrate

Номер патента: CN110447090A. Автор: 草野智博,河瀬康弘,柴田俊明,原田宪,竹下祐太朗. Владелец: Mitsubishi Chemical Corp. Дата публикации: 2019-11-12.

Nitride compound semiconductor etching method and semiconductor light emitting device manufacturing method

Номер патента: JP3931777B2. Автор: 清司大仲,明彦石橋,正也萬濃,敏哉福久. Владелец: Panasonic Corp. Дата публикации: 2007-06-20.

Silicon carbide semiconductor device manufacturing apparatus and silicon carbide semiconductor device manufacturing method using the manufacturing apparatus

Номер патента: JP4360114B2. Автор: 淳小島,広希中村. Владелец: Denso Corp. Дата публикации: 2009-11-11.

Compound semiconductor device and manufacturing method thereof, and semiconductor light emitting device and manufacturing method thereof

Номер патента: JP4560885B2. Автор: 啓修成井,重吾御友. Владелец: Sony Corp. Дата публикации: 2010-10-13.

Substrate processing method, exposure apparatus, and method for producing device by immersing substrate in second liquid before immersion exposure through first liquid

Номер патента: US20120008112A1. Автор: . Владелец: NIKON CORPORATION. Дата публикации: 2012-01-12.

Hollow package structure and its manufacturing method, and semiconductor device and its manufacturing method

Номер патента: JP6625774B1. Автор: 龍彦相澤,靖雄齋藤,秀晴長谷川,憲治和佐,美郎野上. Владелец: 中央電子工業株式会社. Дата публикации: 2019-12-25.

Epitaxial silicon wafer and its manufacturing method, and semiconductor device and its manufacturing method

Номер патента: JP2006190896A. Автор: Koichi Sakurai,光一櫻井,嘉彦草壁,Yoshihiko Kusakabe,隆一若原,Ryuichi Wakahara,Yasunori Morino,寧規森野. Владелец: Renesas Technology Corp. Дата публикации: 2006-07-20.

MIM capacitor and its manufacturing method, and semiconductor device and its manufacturing method

Номер патента: JP3324946B2. Автор: 信之松本. Владелец: Sharp Corp. Дата публикации: 2002-09-17.

Sputtering apparatus, sputtering method, organic EL light emitting device manufacturing apparatus, and organic EL light emitting device manufacturing method

Номер патента: JP4423589B2. Автор: 浩木村. Владелец: Fuji Electric Holdings Ltd. Дата публикации: 2010-03-03.

Lithography simulation apparatus, lithography simulation program, and semiconductor device design and manufacturing method using the same

Номер патента: JP5374727B2. Автор: 弘展田岡. Владелец: Renesas Electronics Corp. Дата публикации: 2013-12-25.

Semiconductor device and its manufacturing method

Номер патента: TW416125B. Автор: Hidenori Mochizuki. Владелец: Asahi Chemical Micro Syst. Дата публикации: 2000-12-21.

Semiconductor device package and manufacturing method thereof

Номер патента: TW200624032A. Автор: Jun-Young Yang,You-Ock Joo,Dong-Pil Jung. Владелец: Advanced Semiconductor Eng. Дата публикации: 2006-07-01.

THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD

Номер патента: US20120009706A1. Автор: . Владелец: . Дата публикации: 2012-01-12.

THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE THIN FILM DEPOSITION APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD

Номер патента: US20120068199A1. Автор: SUNG Un-Cheol,JEONG Dong-Seob,KIM Jung-Yeon. Владелец: . Дата публикации: 2012-03-22.

Thin Film Deposition Apparatus, Method of Manufacturing Organic Light-Emitting Display Device by Using the Apparatus, and Organic Light-Emitting Display Device Manufactured by Using the Method

Номер патента: US20120068201A1. Автор: SUNG Un-Cheol,Choi Beom Rak. Владелец: . Дата публикации: 2012-03-22.

Semiconductor device and manufacturing method thereof

Номер патента: CA3093906C. Автор: YU Zhou,Qian Sun,Hui Yang,Shuai Su,Yaozong ZHONG,Hongwei Gao.,Jianxun Liu,Xiaoning Zhan,Meixin FENG. Владелец: Jiangxi Yuhongjin Material Technology Co ltd. Дата публикации: 2024-04-16.

INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING APPARATUS, APPARATUS, AND NON-TRANSITORY COMPUTER READABLE MEDIUM STORING INFORMATION PROCESSING PROGRAM

Номер патента: US20130246506A1. Автор: Suzuki Takayuki. Владелец: FUJI XEROX CO., LTD.. Дата публикации: 2013-09-19.

Medium processing apparatus, medium processing method, structure manufacturing system, and structure manufacturing method

Номер патента: JP6747042B2. Автор: 守通高鹿,高鹿　守通. Владелец: Casio Computer Co Ltd. Дата публикации: 2020-08-26.

LIGHT SENSING ELEMENT, SEMICONDUCTOR DEVICE, ELECTRONIC EQUIPMENT, MANUFACTURING METHOD OF LIGHT SENSING ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер патента: US20120081638A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2012-04-05.

Method for isolating element of semiconductor device, semiconductor device and its manufacturing method

Номер патента: JPH10209264A. Автор: Takeshi Takahashi,剛高橋. Владелец: Sony Corp. Дата публикации: 1998-08-07.

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE CARRIER AND MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE USING THE SAME

Номер патента: US20120058604A1. Автор: . Владелец: ADVANPACK SOLUTIONS PTE LTD.. Дата публикации: 2012-03-08.

The semiconductor device and its manufacture method and operating method that size reduces

Номер патента: CN105321872B. Автор: 李亚叡,陈冠复. Владелец: Macronix International Co Ltd. Дата публикации: 2018-05-11.

A kind of semiconductor devices and its manufacturing method, electronic device

Номер патента: CN105990093B. Автор: 林静. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-01-18.

A kind of semiconductor devices and its manufacturing method, electronic device

Номер патента: CN105448724B. Автор: 刘杰,李伟,马强,郝龙,金炎,任占强. Владелец: CSMC Technologies Corp. Дата публикации: 2019-03-22.

Semiconductor device and its manufacturing method, and liquid crystal device

Номер патента: JPH10335334A. Автор: 清文北和田,Kiyobumi Kitawada. Владелец: Seiko Epson Corp. Дата публикации: 1998-12-18.

A kind of semiconductor devices and its manufacturing method, electronic device

Номер патента: CN105097695B. Автор: 韩秋华,尚飞,李凤莲. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-08-21.

p-TYPE III NITRIDE SEMICONDUCTOR, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

Номер патента: JP2003023179A. Автор: Hirokazu Iwata,正二皿山,浩和岩田,Shoji Sarayama. Владелец: Ricoh Co Ltd. Дата публикации: 2003-01-24.

A kind of semiconductor devices and its manufacturing method, electronic device

Номер патента: CN105097696B. Автор: 韩秋华. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-07-20.

Semiconductor device forming substrate manufacturing method and dry etching method

Номер патента: JP5691357B2. Автор: 久雄登坂. Владелец: Casio Computer Co Ltd. Дата публикации: 2015-04-01.

PHOTOMASK, MANUFACTURING APPARATUS AND METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND PHOTOMASK FEATURE LAYOUT METHOD

Номер патента: US20120052419A1. Автор: MINAMIDE Ayumi,MONIWA Akemi,Okuno Mitsuru,Ishibashi Manabu. Владелец: . Дата публикации: 2012-03-01.

Substrate processing apparatus and semiconductor devices manufacturing method

Вам могут быть интересны следующие патенты

Главная

Проекты и услуги

Контакты