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Semiconductor device, capacitor, and manufacturing method thereof

Номер патента: US20230329002A1
Опубликовано: 12-10-2023
Автор(ы): Fumito Isaka, Haruyuki Baba, Hitoshi KUNITAKE, Kazuki Tanemura, Shunpei Yamazaki, Tatsuya Onuki, Yasuhiro Jinbo, Yasumasa Yamane, Yuki Ito
Принадлежит: Semiconductor Energy Laboratory Co Ltd
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Номер патента: US20120003795A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

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