Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

  • Главная
  • Method for annealing silicon thin films using conductive layer and polycrystalline silicon thin films prepared therefrom

Method for annealing silicon thin films using conductive layer and polycrystalline silicon thin films prepared therefrom

Номер патента: TWI294649B
Опубликовано: 11-03-2008
Автор(ы): Jae-Sang Ro, Won-Eui Hong
Принадлежит: Jae-Sang Ro
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Thin film transistor and semiconductor device and method for forming the same

Номер патента: US6008076A. Автор: Takeshi Fukada,Naoya Sakamoto,Yukio Yamauchi,Mitsufumi Codama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 1999-12-28.

Thin film transistor and semiconductor device and method for forming the same

Номер патента: US6479334B1. Автор: Takeshi Fukada,Naoya Sakamoto,Yukio Yamauchi,Mitsufumi Codama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2002-11-12.

Method for surface roughness reduction after silicon germanium thin film deposition

Номер патента: US09425046B1. Автор: Steven Patrick MAXWELL,Sundar Narayanan,Natividad VASQUEZ, JR.,Harry Yue Gee. Владелец: Crossbar Inc. Дата публикации: 2016-08-23.

Low Temperature Poly-Silicon Thin Film, Method for Making The Thin Film, and Transistor Made from The Thin Film

Номер патента: US20150194310A1. Автор: Longxian Zhang. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2015-07-09.

Low temperature poly-silicon thin film, method for making the thin film, and transistor made from the thin film

Номер патента: US9209025B2. Автор: Longxian Zhang. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2015-12-08.

Method for forming thin film pattern

Номер патента: US09634045B2. Автор: Haisheng ZHAO,Zhilian XIAO,Xiaoguang PEI. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-04-25.

Method for forming thin film pattern

Номер патента: US20170018581A1. Автор: Haisheng ZHAO,Zhilian XIAO,Xiaoguang PEI. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-01-19.

Apparatus and method for manufacturing poly-si thin film

Номер патента: US20120164819A1. Автор: Jae-Sang Ro,Won-Eui Hong. Владелец: Ensiltech Corp. Дата публикации: 2012-06-28.

Method for manufacturing thin film transistor substrate, method for manufacturing organic light-emitting display apparatus, thin film transistor substrate, and organic light-emitting display apparatus

Номер патента: KR102250044B1. Автор: 배준화,강윤호. Владелец: 삼성디스플레이 주식회사. Дата публикации: 2021-05-11.

Polycrystalline silicon film, a thin-film transistor comprising the same, and a production method thereof

Номер патента: WO2009131379A2. Автор: 노재상,홍원의. Владелец: 주식회사 엔씰텍. Дата публикации: 2009-10-29.

Method for preparing self-supporting crystallized silicon thin film and product obtained therefrom

Номер патента: CN102144283B. Автор: 简-保罗·加朗代,丹尼斯·卡梅尔,贝亚特丽斯·德勒韦. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2013-10-30.

A kind of laser crystallization prepares the method for polysilicon membrane and resulting product and thin film transistor (TFT)

Номер патента: CN108172503A. Автор: 任思雨,陈卓,李建华,苏君海,张鑫磊,徐先新. Владелец: Truly Huizhou Smart Display Ltd. Дата публикации: 2018-06-15.

Method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and a nanoporous ultra-low dielectric thin film prepared by the same method

Номер патента: US09679761B2. Автор: Bum Suk Kim,Bo Ra Shin,Hee Woo Rhee,Kyu Yoon CHOI. Владелец: Sogang University. Дата публикации: 2017-06-13.

Method for manufacturing low-temperature poly-silicon thin film transistor, low-temperature poly-silicon thin film transistor and display device

Номер патента: US20180294344A1. Автор: Kui Gong. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-10-11.

Composite substrate and method for manufacturing the same, and semiconductor device structure

Номер патента: US20240258321A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-08-01.

Thin film transistor and method for manufacturing same, array substrate, display panel and display device

Номер патента: US20210167220A1. Автор: Lin Sun,Chao Wang,Binbin CAO. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2021-06-03.

Thin film transistor and a manufacturing method thereof, array substrate and a manufacturing method thereof, display device

Номер патента: US9773813B2. Автор: Zhenyu Xie. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-09-26.

Thin film transistor and a manufacturing method thereof, array substrate and a manufacturing method thereof, display device

Номер патента: US20160141311A1. Автор: Zhenyu Xie. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2016-05-19.

Complementary thin film transistor driving back plate and preparing method thereof, and display device

Номер патента: US09647014B2. Автор: Gang Wang,Xiaodi LIU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-05-09.

Thin film transistor array panel and manufacturing method thereof

Номер патента: US20120052626A1. Автор: Chang-Mo Park,Seong-Kweon Heo,Min-Chul Shin. Владелец: Individual. Дата публикации: 2012-03-01.

Method of Manufacturing Thin Film Transistor, Dehydrogenating Apparatus for Performing the Same, and Organic Light Emitting Display Device Including Thin Film Transistor Manufactured by the Same

Номер патента: US20170352688A1. Автор: Lee Sung Soo. Владелец: . Дата публикации: 2017-12-07.

Method for manufacturing CI(G)S-based thin film comprising Cu-Se thin film using Cu-Se two-component nanoparticle flux, and CI(G)S-based thin film manufactured by the method

Номер патента: US09496449B2. Автор: Ara Cho,Jae-Ho Yun,Kyung-Hoon YOON,Kee-Shik Shin,SeJin Ahn,Jihye Gwak,SeoungKyu Ahn. Владелец: Korea Institute of Energy Research KIER. Дата публикации: 2016-11-15.

Method for forming an absorber layer of a thin film solar cell

Номер патента: US8569101B2. Автор: Tadahiro Kubota,Daisuke Okamura,Katustoshi Nosaki. Владелец: Honda Motor Co Ltd. Дата публикации: 2013-10-29.

Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate

Номер патента: US11961765B2. Автор: Yuki Takiguchi,Masahiro Fujikawa,Eiji Yagyu,Kunihiko Nishimura,Shuichi Hiza. Владелец: Mitsubishi Electric Corp. Дата публикации: 2024-04-16.

Systems and methods for processing the surface of an epitaxially grown silicon film using a radical species

Номер патента: US20230265582A1. Автор: Arun Murali,Gregory Deye,Yen Chun Fu. Владелец: ASM IP Holding BV. Дата публикации: 2023-08-24.

Method for improving continuity of work function thin film

Номер патента: US20230290634A1. Автор: Yanxia Hao. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2023-09-14.

Manufacturing method of polysilicon semiconductor layer,thin film transistor and manufacturing method

Номер патента: US20200006524A1. Автор: Ming-Jen Lu. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-01-02.

Boron-doped polycrystalline silicon thin film with high piezoresistance characteristics and preparation method of boron-doped polycrystalline silicon thin film

Номер патента: CN105140105A. Автор: 王宙,董桂馥,付传起,雍帆,骆旭梁. Владелец: Dalian University. Дата публикации: 2015-12-09.

Method for producing multilayer single crystal silicon thin film

Номер патента: JP6674568B2. Автор: 啓森 党. Владелец: 瀋陽硅基科技有限公司. Дата публикации: 2020-04-01.

Method for Preparing Metal Doped Transparent Conductive Oxide Thin Film and Thin Film Transistor Using the Same

Номер патента: KR100999501B1. Автор: 정우석,유민기,추혜용,황치선,정승묵. Владелец: 한국전자통신연구원. Дата публикации: 2010-12-09.

Gate all around structure with additional silicon layer and method for forming the same

Номер патента: US12119404B2. Автор: Chih-Hao Wang,Chun-Hsiung Lin,Chen-Han Wang,Pei-Hsun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Method for forming semiconductor structure with nanowire structures

Номер патента: US09875937B2. Автор: Chih-Wei Yang,Yu-Cheng Tung,En-Chiuan Liou. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-23.

METHOD FOR MANUFACTURING LOW-TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR

Номер патента: US20190096670A1. Автор: LI Songshan. Владелец: Wuhan China Star Optoelectronics Technology Co., Ltd.. Дата публикации: 2019-03-28.

Gate all around structure with additional silicon layer and method for forming the same

Номер патента: US20230343873A1. Автор: Chih-Hao Wang,Chun-Hsiung Lin,Chen-Han Wang,Pei-Hsun Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Method of manufacturing low temperature polycrystalline silicon thin film and thin film transistor, thin film transistor, display panel and display device

Номер патента: US09842735B2. Автор: Chao Liu,Lei Chen,Yujun Zhang,Yanan NIU,Zengsheng He. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-12-12.

Method for forming ONO top oxide in NROM structure

Номер патента: US20040228969A1. Автор: Ching Wang,Hsian Lung. Владелец: Macronix International Co Ltd. Дата публикации: 2004-11-18.

Plasma enhanced deposition processes for controlled formation of oxygen containing thin films

Номер патента: US11776807B2. Автор: Sun Ja Kim,Oreste Madia,Viljami J. Pore,Marko Tuominen,Lingyun Jia. Владелец: ASM IP Holding BV. Дата публикации: 2023-10-03.

Method for making ferroelectric thin film

Номер патента: US20040101980A1. Автор: Eiji Natori,Kenichi Kurokawa. Владелец: Seiko Epson Corp. Дата публикации: 2004-05-27.

A method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications

Номер патента: MY134065A. Автор: Daniel C Edelstein,Richard A Conti,Gill Y Lee. Владелец: Infineon Technologies Corp. Дата публикации: 2007-11-30.

Method of manufacturing thin film transistor and organic light emitting diode display

Номер патента: US09401418B2. Автор: Xiaowen LV,Chihyuan Tseng. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-07-26.

METHOD FOR MANUFACTURING LOW-TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR, LOW-TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND DISPLAY DEVICE

Номер патента: US20180294344A1. Автор: GONG Kui. Владелец: . Дата публикации: 2018-10-11.

Method for preparing power diode

Номер патента: US09502497B2. Автор: Dongfei Zhou,Xiaoshe Deng,Genyi Wang,Shengrong Zong. Владелец: CSMC Technologies Fab1 Co Ltd. Дата публикации: 2016-11-22.

Method for forming semiconductor device structure

Номер патента: US09842768B2. Автор: Chih-Lin Wang,Kang-Min Kuo,Shu-Cheng Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-12.

Semiconductor structure and method for manufacturing semiconductor structure

Номер патента: US20240079232A1. Автор: Kai Cheng,Liyang Zhang. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-03-07.

Method for forming semiconductor-on-insulator (soi) substrate

Номер патента: US20240282775A1. Автор: Chia-Shiung Tsai,Yu-Hung Cheng,Ching I Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Method for forming patterns for semiconductor device

Номер патента: US09875927B2. Автор: Home-Been Cheng,Tzu-Hao Fu,Tsung-Yin HSIEH,Ci-Dong Chu. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-23.

Method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and a nanoporous ultra-low dielectric thin film prepared by the same method

Номер патента: US20130101825A1. Автор: Bum Suk Kim,Bo Ra Shin,Hee Woo Rhee,Kyu Yoon CHOI. Владелец: Industry University Cooperation Foundation of Sogang University. Дата публикации: 2013-04-25.

Method for manufacturing bit line structure, method for manufacturing semiconductor structure, and semiconductor structure

Номер патента: US11985814B2. Автор: Ning Xi,Peimeng WANG. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-05-14.

Manufacturing method of polysilicon layer, and polysilicon thin film transistor and manufacturing method thereof

Номер патента: US20150155390A1. Автор: Zuqiang Wang. Владелец: Ordos Yuansheng Optoelectronics Co Ltd. Дата публикации: 2015-06-04.

A method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications

Номер патента: TWI234200B. Автор: Daniel C Edelstein,Richard A Conti,Gill-Yong Lee. Владелец: Ibm. Дата публикации: 2005-06-11.

Graphite thin film/silicon substrate laminate, method for producing same and substrate for high exhaust heat-type electronic devices

Номер патента: EP3905305A1. Автор: Masataka Hasegawa. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2021-11-03.

Method for manufacturing Bi layer structure strong electrolyte thin-film

Номер патента: CN1182286A. Автор: 宝地户雄幸,门仓秀公,松本政道,有田浩二,吾妻正道,大槻达男. Владелец: High Purity Chemical Research Institute. Дата публикации: 1998-05-20.

Method for forming patterns for semiconductor device

Номер патента: US20170069529A1. Автор: Home-Been Cheng,Tzu-Hao Fu,Tsung-Yin HSIEH,Ci-Dong Chu. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-09.

Semiconductor Module and Method for Manufacturing the Same

Номер патента: US20230016808A1. Автор: Junghee Park,Dae Hwan Chun,Youngkyun Jung,NackYong JOO,Jungyeop Hong. Владелец: Kia Corp. Дата публикации: 2023-01-19.

Method for manufacturing a composite structure comprising a thin film of monocrystalline sic on a carrier substrate of polycrystalline sic

Номер патента: US20240271321A1. Автор: Eric Guiot,Frederic Allibert. Владелец: Soitec SA. Дата публикации: 2024-08-15.

Semiconductor module and method for manufacturing the same

Номер патента: US11837636B2. Автор: Junghee Park,Dae Hwan Chun,Youngkyun Jung,NackYong JOO,Jungyeop Hong. Владелец: Kia Corp. Дата публикации: 2023-12-05.

STRUCTURE AND METHOD FOR CREATING A REUSABLE TEMPLATE FOR DETACHABLE THIN FILM SUBSTRATES

Номер патента: US20130241038A1. Автор: Kramer Karl-Josef,Moslehi Mehrdad M.,Kapur Pawan,Dutton David,Parikh Suketu,Nag Somnath,Ozguven Nevran,Ucok Burcu. Владелец: SOLEXEL, INC.. Дата публикации: 2013-09-19.

Thin film transistor, array substrate, display panel and method for manufacturing thin film transistor

Номер патента: US20200013867A1. Автор: Bin Zhou,Liangchen YAN,Dongfang Wang,Tongshang Su,Ce ZHAO. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2020-01-09.

Method for manufacturing CZTS based thin film having dual band gap slope, method for manufacturing CZTS based solar cell having dual band gap slope and CZTS based solar cell thereof

Номер патента: US09780246B2. Автор: Sang Hyun Park,Young Joo Eo,Ara Cho,SeJin Ahn,Jihye Gwak,Kyung Hoon YOON,Jae Ho Yun,Kee Shik Shin,SeoungKyu Ahn,Jun Sik Cho,Joo Hyung Park,Jin Su You. Владелец: Korea Institute of Energy Research KIER. Дата публикации: 2017-10-03.

Thin film transistor and method for manufacturing the same

Номер патента: US20220037531A1. Автор: Ting-Chang Chang,Yu-Lin Tsai,Yu-Ching Tsao,Po-Hsun Chen,Hong-Chih Chen,Mao-Chou Tai,Shin-Ping Huang. Владелец: National Sun Yat Sen University. Дата публикации: 2022-02-03.

Method for manufacturing semiconductor device

Номер патента: US09831101B2. Автор: Shunpei Yamazaki,Junichiro Sakata,Toshinari Sasaki,Hiroki Ohara. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-11-28.

Method for manufacturing thin film transistor and related active layer for thin film transistor, thin film transistor, array substrate, and display apparatus

Номер патента: US20170005115A1. Автор: Lujiang Huangfu,Chien Hung Liu,Zuqiang Wang,Yu Cheng Chan. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-01-05.

Method for manufacturing thin film transistor and related active layer for thin film transistor, thin film transistor, array substrate, and display apparatus

Номер патента: US09887213B2. Автор: Lujiang Huangfu,Chien Hung Liu,Zuqiang Wang,Yu Cheng Chan. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-02-06.

Method for forming thin film and apparatus for processing substrate therefor

Номер патента: US20240290586A1. Автор: Jae Hun Lee,Jeong Jun Lee,Kyoung Pil NA,Yu Deuk Kim,Jae Gab LIM,Gun Hee CHO. Владелец: Wonik Ips Co Ltd. Дата публикации: 2024-08-29.

Semiconductor device and method for manufacturing the same

Номер патента: US09722054B2. Автор: Kengo Akimoto,Toshinari Sasaki,Hideaki Kuwabara. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-08-01.

Polycrystalline silicon thin film and method thereof, optical film, and thin film transistor

Номер патента: US20170186611A1. Автор: Dong Li,Zheng Liu,Chunping Long,Xiaoyong Lu,Shuai ZHANG. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-06-29.

Method for doping carbon in thin film on wafer

Номер патента: EP4455376A1. Автор: Sung Kil Cho. Владелец: HPSP Co Ltd. Дата публикации: 2024-10-30.

Transition metal dichalcogenide thin film, method for manufacturing the same and display device comprising the same

Номер патента: US20200181768A1. Автор: Sung-Yool Choi,Gi Woong SHIM,Woonggi HONG. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2020-06-11.

Three dimensional compositional profile in CIS-based absorber layers of thin film solar cells

Номер патента: US09431562B2. Автор: Chien Yao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-30.

Method of Fabricating Thin-Film Transistor

Номер патента: US20090050880A1. Автор: Takashi Fuyuki,Hiroya Kirimura,Yukiharu Uraoka. Владелец: Nara Institute of Science and Technology NUC. Дата публикации: 2009-02-26.

Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same

Номер патента: US7851802B2. Автор: Sang-yoon Lee,Myung-kwan Ryu,Tae-Sang Kim,Jang-yeon Kwon,Kyung-bae Park,Ji-sim Jung,Jae-Young Choi,Hyeon-jin SHIN,Seon-mi Yoon,Kyung-seok SON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-12-14.

Thin film structure including dielectric material layer and electronic device including the same

Номер патента: US11532722B2. Автор: Woojin Lee,Eunsun Kim,Yongsung Kim,Kiyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-12-20.

Passivation layer and preparation method thereof, flexible thin film transistor and preparation method thereof, and array substrate

Номер патента: US12040404B2. Автор: WEI ZHONG,Rongsheng Chen,Lelong YAN. Владелец: South China University of Technology SCUT. Дата публикации: 2024-07-16.

Thin film transistor and manufacturing method thereof, array substrate and display device

Номер патента: US09882063B2. Автор: LI ZHANG. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-01-30.

Thin film transistor and manufacturing method thereof, array substrate and display device

Номер патента: US09773817B2. Автор: Haipeng Yang,Jaikwang Kim,Zhizhong TU,Yongjun Yoon. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2017-09-26.

Method for Forming SiGe Channel

Номер патента: US20240072168A1. Автор: Xinhua Cheng. Владелец: Shanghai Huali Integrated Circuit Corp. Дата публикации: 2024-02-29.

Method for manufacturing semiconductor device

Номер патента: US20160268138A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2016-09-15.

Atomic layer deposition of rhenium containing thin films

Номер патента: US11821084B2. Автор: Mikko Ritala,Markku Leskelä,Jani Hämäläinen. Владелец: ASM IP Holding BV. Дата публикации: 2023-11-21.

Method of fabricating thin film transistor, thin film transistor, array substrate, and display apparatus

Номер патента: US10777588B2. Автор: HU Meng,Qi Huang,Xuelei Liang,Jiye XIA,Boyuan TIAN,Guodong Dong. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-09-15.

Thin film encapsulation structure and organic light emitting device having the same

Номер патента: US09608235B2. Автор: LING Xiao,Guifang Li,Niu HU. Владелец: EverDisplay Optronics Shanghai Co Ltd. Дата публикации: 2017-03-28.

Manufacturing method for ferroelectric film and nonvolatile memory using the same

Номер патента: US6114199A. Автор: Takaaki Ami,Katsuyuki Hironaka,Chiharu Isobe,Masataka Sugiyama,Christian Gutleben. Владелец: Sony Corp. Дата публикации: 2000-09-05.

Method for manufacturing semiconductor structure with thin film transistor

Номер патента: US20240038893A1. Автор: Georgios Vellianitis,Marcus Johannes Henricus Van Dal,Gerben Doornbos,Mauricio Manfrini. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-01.

Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same

Номер патента: US20090127560A1. Автор: Sang-yoon Lee,Myung-kwan Ryu,Tae-Sang Kim,Jang-yeon Kwon,Kyung-bae Park,Ji-sim Jung,Jae-Young Choi,Hyeon-jin SHIN,Seon-mi Yoon,Kyung-seok SON. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-05-21.

Thin film transistor and manufacturing method thereof, array substrate and display device

Номер патента: US20160329356A1. Автор: Yucheng CHAN,Chienhung Liu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-11-10.

Crystalline multilayer oxide thin films structure in semiconductor device

Номер патента: US20190148482A1. Автор: Masaya Oda,Toshimi Hitora. Владелец: Flosfia Inc. Дата публикации: 2019-05-16.

Novel Amino-Silyl Amine Compound, Method for Preparing the Same and Silicon-Containing Thin-Film Using the Same

Номер патента: US20140363985A1. Автор: Kim Jong Hyun,Kim Sung Gi,Lee Sang Ick,Kim Myong Woon,Lee Sang Do,JANG Se Jin,YANG Byeong il,SEOK Jang Hyeon. Владелец: . Дата публикации: 2014-12-11.

Novel cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same

Номер патента: US20160326193A1. Автор: Sang Ick Lee,JANG Hyeon Seok,Jong Hyun Kim,Myong Woon Kim,Sang-Do Lee,Do Yeon Kim,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang. Владелец: DNF Co Ltd. Дата публикации: 2016-11-10.

Method for Selective Lift-off and Transfer of Thin Film Using Liquid Platform

Номер патента: KR102264384B1. Автор: 김택수,강수민. Владелец: 한국과학기술원. Дата публикации: 2021-06-14.

Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same

Номер патента: US9809608B2. Автор: Sang Ick Lee,JANG Hyeon Seok,Jong Hyun Kim,Myong Woon Kim,Sang-Do Lee,Do Yeon Kim,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang. Владелец: DNF Co Ltd. Дата публикации: 2017-11-07.

Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process

Номер патента: CN101632154B. Автор: 崔寅焕. Владелец: In-Solar Tech Co Ltd. Дата публикации: 2011-11-02.

Single crystal thin film formation method for semiconductor industries, involves growing single crystal thin film on exposed surface of amorphous thin film by nuclear or molecular beam of specific incidence angle

Номер патента: DE10009876A1. Автор: Tatau Nishinaga. Владелец: University of Tokyo NUC. Дата публикации: 2000-11-16.

Thin film structure including dielectric material layer and electronic device including the same

Номер патента: US20210043749A1. Автор: Woojin Lee,Eunsun Kim,Yongsung Kim,Kiyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-11.

Thin film structure including dielectric material layer and electronic device including the same

Номер патента: US20230074895A1. Автор: Woojin Lee,Eunsun Kim,Yongsung Kim,Kiyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-03-09.

Thin film structure including dielectric material layer and electronic device including the same

Номер патента: US12015073B2. Автор: Woojin Lee,Eunsun Kim,Yongsung Kim,Kiyoung Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

The preparation method and thin film transistor (TFT) of copper conductive layer

Номер патента: CN110289208A. Автор: 卓恩宗,夏玉明. Владелец: Chuzhou HKC Optoelectronics Technology Co Ltd. Дата публикации: 2019-09-27.

Method for crystallizing silicon layer

Номер патента: US6692996B2. Автор: Seok Woon Lee,Seung Ki Joo. Владелец: PT Plus Co Ltd. Дата публикации: 2004-02-17.

Method of fabricating thin film transistor, thin film transistor, array substrate, and display apparatus

Номер патента: WO2019042118A1. Автор: HU Meng,Qi Huang,Xuelei Liang,Jiye XIA,Boyuan TIAN,Guodong Dong. Владелец: PEKING UNIVERSITY. Дата публикации: 2019-03-07.

Method of fabricating thin film transistor, thin film transistor, array substrate, and display apparatus

Номер патента: US20200185422A1. Автор: HU Meng,Qi Huang,Xuelei Liang,Jiye XIA,Boyuan TIAN,Guodong Dong. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2020-06-11.

Thin film encapsulation structure and organic light emitting device having the same

Номер патента: US20160276627A1. Автор: LING Xiao,Guifang Li,Niu HU. Владелец: EverDisplay Optronics Shanghai Co Ltd. Дата публикации: 2016-09-22.

Thin film laminate structure, integrated device including the same, and method of manufacturing the thin film laminate structure

Номер патента: US20220238633A1. Автор: Byunghoon NA,Kiyoung Lee,Kookrin Char,Hahoon LEE,Dowon SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-28.

Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates

Номер патента: US20060208257A1. Автор: Howard Branz,Charles Teplin,David Ginley. Владелец: Midwest Research Institute. Дата публикации: 2006-09-21.

Thin film transistor, and display panel and display apparatus using the same

Номер патента: US20210193804A1. Автор: Jeyong JEON,Pilsang YUN,Jiyong NOH,Intak Cho,Jaeman JANG. Владелец: LG Display Co Ltd. Дата публикации: 2021-06-24.

Crystalline multilayer oxide thin films structure in semiconductor device

Номер патента: US20180308924A1. Автор: Masaya Oda,Toshimi Hitora. Владелец: Flosfia Inc. Дата публикации: 2018-10-25.

Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device

Номер патента: US20140367683A1. Автор: Masahiko Suzuki,Hirohiko Nishiki,Takeshi Hara,Michiko Takei,Yoshimasa Chikama,Go Mori,Okifumi Nakagawa,Yoshifumi Ohta,Tetsuya Aita,Yoshiyuki Harumoto. Владелец: Sharp Corp. Дата публикации: 2014-12-18.

Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device

Номер патента: US9076718B2. Автор: Masahiko Suzuki,Hirohiko Nishiki,Takeshi Hara,Michiko Takei,Yoshimasa Chikama,Go Mori,Okifumi Nakagawa,Yoshifumi Ohta,Tetsuya Aita,Yoshiyuki Harumoto. Владелец: Sharp Corp. Дата публикации: 2015-07-07.

Method for preparing electronic member comprising inorganic nanoparticle thin film and electronic member prepared thereby

Номер патента: KR102484464B1. Автор: 이우석,오승주,우호균. Владелец: 고려대학교 산학협력단. Дата публикации: 2023-01-02.

Method for determining preferential deposition parameters for a thin film of iii-v material

Номер патента: EP3018697B1. Автор: Yann Bogumilowicz,Jean-Michel Hartmann. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2022-05-11.

Thin film transistor (TFT) and manufacture method thereof and there is the display device of this thin film transistor (TFT)

Номер патента: CN104218090B. Автор: 黄俊杰,陈韦廷. Владелец: EverDisplay Optronics Shanghai Co Ltd. Дата публикации: 2017-01-04.

Nitrogen Plasma Treatment For Improving Interface Between Etch Stop Layer And Copper Interconnect

Номер патента: US20210257293A1. Автор: Chih-Chien Chi,Po-Hsiang Huang,Jen Hung Wang,Pei-Hsuan Lee,Wen-Sheh Huang,Su-Jen Sung,Hui LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-19.

Semiconductor device and manufacturing method for the same

Номер патента: US20130062695A1. Автор: ZHONGSHAN Hong. Владелец: Semiconductor Manufacturing International Beijing Corp. Дата публикации: 2013-03-14.

Method for manufacturing semiconductor device

Номер патента: US9704715B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2017-07-11.

Method for use in making electronic devices having thin-film magnetic components

Номер патента: US20110008915A1. Автор: Jason Reid,Jean Pierre Nozieres. Владелец: CROCUS TECHNOLOGY SA. Дата публикации: 2011-01-13.

Systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same

Номер патента: US09583354B2. Автор: David P. Taylor,Margaret H. Abraham. Владелец: Aerospace Corp. Дата публикации: 2017-02-28.

Method for fabricating three dimensional anisotropic thin films

Номер патента: US6541392B2. Автор: Peter Mardilovich,Alexander N. Govyadinov,Yuval C Avniel. Владелец: Technology Ventures LLC. Дата публикации: 2003-04-01.

Thin film transfer using substrate with etch stop layer and diffusion barrier layer

Номер патента: US11804531B2. Автор: Chia-Shiung Tsai,Ru-Liang Lee,Chen-Hao Chiang,Eugene I-Chun Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-31.

Thin film transfer using substrate with etch stop layer and diffusion barrier layer

Номер патента: EP3944297A1. Автор: Chia-Shiung Tsai,Ru-Liang Lee,Chen-Hao Chiang,Eugene I-Chun Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-01-26.

Thin Film Transfer Using Substrate with Etch Stop Layer and Diffusion Barrier Layer

Номер патента: US20230369433A1. Автор: Chia-Shiung Tsai,Ru-Liang Lee,Chen-Hao Chiang,Eugene I-Chun Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Semiconductor device and method for manufacturing the same

Номер патента: US20100129969A1. Автор: Yasuyuki Arai,Ikuko Kawamata. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2010-05-27.

Method for improving threshold voltage of oxide semiconductor thin-film transistor

Номер патента: EP3644347A1. Автор: Xuanyun Wang. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2020-04-29.

Structure, Method for Manufacturing Structure, and illuminating structure of Thin Film Transistor

Номер патента: US20140374761A1. Автор: Tarng-Shiang Hu,Yi-Kai Wang,Chi-Jen Kao. Владелец: Wistron Corp. Дата публикации: 2014-12-25.

Thin film transfer using substrate with etch stop layer and diffusion barrier layer

Номер патента: US20240379792A1. Автор: Chia-Shiung Tsai,Ru-Liang Lee,Chen-Hao Chiang,Eugene I-Chun Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Metallic thin film and method of manufacturing the same, and surface acoustic wave device using the metallic thin film and the method thereof

Номер патента: CA2195486C. Автор: Masato Kobayashi,Atsushi Sakurai,Yukio Yoshino,Hidefumi Nakanishi. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2000-10-31.

Method for manufacturing display substrate, display substrate and display device

Номер патента: US12113076B2. Автор: LIANG Chen,Tao Jiang,Tao Wang,Jincheng GAO,Jiantao Liu,Quanzhou LIU,Haijiao QIAN,Guanyong ZHANG,Zexu Liu,Lixing ZHAO. Владелец: Hefei BOE Display Lighting Co Ltd. Дата публикации: 2024-10-08.

Organic electroluminescent device and method for fabricating the same

Номер патента: US09692020B2. Автор: Ji Hyun Lee,Dae Jung Choi,Ki Soub Yang,Seung Ryul Choi,Kyoung Jin PARK,Kang Hyun KIM,Han Hee KIM. Владелец: LG Display Co Ltd. Дата публикации: 2017-06-27.

Organic electroluminescent device and method for fabricating the same

Номер патента: US09418893B2. Автор: Ji Hyun Lee,Dae Jung Choi,Ki Soub Yang,Seung Ryul Choi,Kyoung Jin PARK,Kang Hyun KIM,Han Hee KIM. Владелец: LG Display Co Ltd. Дата публикации: 2016-08-16.

Method for manufacturing display substrate, display substrate and display device

Номер патента: US20220302180A1. Автор: LIANG Chen,Tao Jiang,Tao Wang,Jincheng GAO,Jiantao Liu,Quanzhou LIU,Haijiao QIAN,Guanyong ZHANG,Zexu Liu,Lixing ZHAO. Владелец: Hefei BOE Display Lighting Co Ltd. Дата публикации: 2022-09-22.

Systems and methods for manufacturing flexible electronics

Номер патента: US20200335397A1. Автор: TIAN Xiao,Mark W. Naumann,King Hong Kwan,Sheng-Hsiang Hung. Владелец: NEXT BIOMETRICS GROUP ASA. Дата публикации: 2020-10-22.

METHOD FOR DETERMINING THE COMPLETE REMOVAL OF A THIN FILM FROM A NON-PLANAR SUBSTRATE.

Номер патента: FR2665024A1. Автор: Tissier Annie,Galvier Jean,Gayet Philippe. Владелец: Individual. Дата публикации: 1992-01-24.

Method for fabricating ultra-low density three-dimensional thin film structure based on photo-lithography

Номер патента: US09878472B2. Автор: Ki Ju Kang,Min Geun Lee,Seung Cheul HAN. Владелец: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY. Дата публикации: 2018-01-30.

Method for forming a pattern and forming a thin film used in pattern formation

Номер патента: US5512328A. Автор: Shinji Okazaki,Hiroshi Shiraishi,Toshiyuki Yoshimura,Naoko Miura,Minoru Toriumi. Владелец: HITACHI LTD. Дата публикации: 1996-04-30.

Thin film transistor and manufacturing method thereof, an array substrate and a display device

Номер патента: US09502570B2. Автор: XIANG Liu,Gang Wang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-11-22.

Method for forming a polysilicon thin film layer

Номер патента: US20090127557A1. Автор: Shan-Hung Tsai,Tsung-Yen LIN,Ho-Hsuan Lin,Wen-Tseng Cheng. Владелец: TPO Displays Corp. Дата публикации: 2009-05-21.

Thin film transistor comprising light shielding layers, array substrate and manufacturing processes of them

Номер патента: US09978876B2. Автор: Youngsuk Song,Hongda Sun. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-05-22.

Transistor device structure that includes polycrystalline semiconductor thin film that has large grain size

Номер патента: US09455350B2. Автор: Chih-Chao Yang,Tung-Ying Hsieh,Jia-Min Shieh,Chang-Hong Shen,Wen-Hsien Huang. Владелец: NATIONAL APPLIED RESEARCH LABORATORIES. Дата публикации: 2016-09-27.

LTPS array substrate and method for producing the same

Номер патента: US09893096B2. Автор: Peng Du,Cong Wang. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-02-13.

Method for producing and method for designing soi wafer

Номер патента: EP2544236A4. Автор: Susumu Kuwabara. Владелец: Shin Etsu Handotai Co Ltd. Дата публикации: 2013-12-04.

Semiconductor structures including conducting structure and methods for making the same

Номер патента: US20240145593A1. Автор: Peiching Ling,Nanray Wu. Владелец: Individual. Дата публикации: 2024-05-02.

Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions

Номер патента: EP1071132A3. Автор: Min Zhu,Kai Chartered Semiconductor Manuf. Pte Ltd. Shao,Shao-fu Chart. Semicond. Manuf. Ltd Sandford Chu. Владелец: Chartered Semiconductor Manufacturing Pte Ltd. Дата публикации: 2004-06-09.

A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

Номер патента: WO2002015252A3. Автор: Akinori Matsumoto,Yoshihisa Hatta,Shinichi Li. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2002-11-21.

A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

Номер патента: WO2002015252A2. Автор: Akinori Matsumoto,Yoshihisa Hatta,Shinichi Li. Владелец: KONINKLIJKE PHILIPS ELECTRONICS N.V.. Дата публикации: 2002-02-21.

A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

Номер патента: EP1309991A2. Автор: Akinori Matsumoto,Yoshihisa Hatta,Shinichi Li. Владелец: KONINKLIJKE PHILIPS ELECTRONICS NV. Дата публикации: 2003-05-14.

Etching liquid for film of multilayer structure containing copper layer and molybdenum layer

Номер патента: US09580818B2. Автор: Satoshi Tamai,Kunio Yube,Satoshi Okabe,Masahide Matsubara. Владелец: Mitsubishi Gas Chemical Co Inc. Дата публикации: 2017-02-28.

Method for forming semiconductor structure

Номер патента: US12087584B2. Автор: Daejoong Won. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-10.

Method for fabricating semiconductor device

Номер патента: US20110159694A1. Автор: Young-Bang Lee,Ok-Min Moon. Владелец: Hynix Semiconductor Inc. Дата публикации: 2011-06-30.

Method for ablating or roughening wafer surfaces

Номер патента: US11958739B2. Автор: Jason Rodger DWYER,Y. M. Nuwan D. Y. Bandara,Brian SHEETZ. Владелец: University of Rhode Island Board of Trustees. Дата публикации: 2024-04-16.

Thin film fabricating method for e.g. microelectronics field, involves detaching thin film by fracturing substrate at layer by applying mechanical and/or chemical detachment stress under conditions in which precipitates are in liquid phase

Номер патента: FR2899378A1. Автор: Bruce Faure,Aurelie Tauzin,Arnaud Garnier. Владелец: Soitec SA. Дата публикации: 2007-10-05.

Reactive ion etching method for lead zirconate titanate and ruthenium oxide thin films and semiconductor device manufactured using the same

Номер патента: JP3010112B2. Автор: ビー． デスー セシュ,パン ウェイ,ビジェ ディリップ. Владелец: Sharp Corp. Дата публикации: 2000-02-14.

Method for attaching masking film and apparatus for attaching masking film used therein

Номер патента: KR950021203A. Автор: 김일호,김철희,안웅관,고균희. Владелец: 김광호. Дата публикации: 1995-07-26.

Method for forming semiconductor structure

Номер патента: US20220037158A1. Автор: Daejoong Won. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-02-03.

Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam

Номер патента: US09680047B2. Автор: Sun Hwa Lee,Ho Sung Kim,Sang Ryu,Chae Hwan Jeong,Seong Jae Boo. Владелец: Korea Institute of Industrial Technology KITECH. Дата публикации: 2017-06-13.

Organic thin-film transistor and method for manufacturing the same, material for organic thin-film transistor, composition for organic thin-film transistor, compound, and organic semiconductor film

Номер патента: US20180159048A1. Автор: Tetsuya Watanabe,Takashi Goto,Yoshihisa Usami,Toshihiro Okamoto,Eiji Fukuzaki,Hiroaki Tsuyama,Masashi Koyanagi,Junichi Takeya. Владелец: University of Tokyo NUC. Дата публикации: 2018-06-07.

Method for vapor-phase growth of phase-change thin film, and device for vapor-phase growth of phase-change thin film

Номер патента: US20170125675A1. Автор: Takashi Kobayashi,Yoshihisa Fujisaki,Yoshitaka Sasago. Владелец: HITACHI LTD. Дата публикации: 2017-05-04.

Method for vapor-phase growth of phase-change thin film, and device for vapor-phase growth of phase-change thin film

Номер патента: US09911916B2. Автор: Takashi Kobayashi,Yoshihisa Fujisaki,Yoshitaka Sasago. Владелец: HITACHI LTD. Дата публикации: 2018-03-06.

Full-laser scribing method for large-area copper indium gallium selenide thin-film solar cell module

Номер патента: US20180114876A1. Автор: Ning Zhang,Xinping YU,Wanlei Dai. Владелец: Beijing Sifang Crenergey Optoelectronics Technology Co Ltd. Дата публикации: 2018-04-26.

Method for producing a textured reflector for a thin-film photovoltaic cell, and resulting textured reflector

Номер патента: US09952360B2. Автор: Cédric Ducros,Helga Szambolics. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2018-04-24.

Method for manufacturing of substrate with structure of thin-film transistors

Номер патента: RU2491678C1. Автор: Тохру ОКАБЕ,Хирохико НИСИКИ,Йосимаса ТИКАМА,Такеси ХАРА. Владелец: Шарп Кабусики Кайся. Дата публикации: 2013-08-27.

Cdte based thin film solar cell device with diffusion barrier layer and method for manufacturing thereof

Номер патента: WO2024077583A1. Автор: SHOU PENG,Marko Swoboda,Xinjian Yin,Ganhua FU,Liyun MA,Robert Arndt. Владелец: CTF SOLAR GMBH. Дата публикации: 2024-04-18.

Thin film structure for micro-bolometer and method for fabricating the same

Номер патента: US20190316968A1. Автор: Won Jun Choi,Sanghyeon Kim,Jeong Min BAIK,Ki-suk Lee,Seung Hyub BAEK,Tae Hyeon KIL. Владелец: UNIST Academy Industry Research Corp. Дата публикации: 2019-10-17.

Fixtures and methods for facilitating the fabrication of devices having thin film materials

Номер патента: WO2004021489A2. Автор: Werner Kraus,Raymond Puffer,Jürgen PAWLIK,Glen Hoppes,Stephen Derby,Glenn Saunders,Louise Courtois. Владелец: Pemeas GmbH. Дата публикации: 2004-03-11.

Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors formed with an oxide semiconductor channel

Номер патента: US20240114689A1. Автор: Usha Raghuram,Jie Zhou. Владелец: Sunrise Memory Corp. Дата публикации: 2024-04-04.

PREPARATION METHOD FOR GROWING GERMANIUM SULFIDE (GeS2) SINGLE-CRYSTAL THIN FILM ON SiO2 SUBSTRATE

Номер патента: US20240120431A1. Автор: SHENG Chen,Guoqiang Li,Wenliang Wang,Jixing CHAI. Владелец: South China University of Technology SCUT. Дата публикации: 2024-04-11.

Method of fabricating copper indium gallium selenide (CIGS) thin film for solar cell using simplified co-vacuum evaporation and copper indium gallium selenide (CIGS) thin film for solar cell fabricated by the same

Номер патента: US09472708B2. Автор: Ara Cho,Jae-Ho Yun,Sung Woo Choi,SeJin Ahn,Jihye Gwak,Kyung Hoon YOON,Kee Shik Shin,SeoungKyu Ahn,Guk-Yeong Jeong,Hisun Park. Владелец: Korea Institute of Energy Research KIER. Дата публикации: 2016-10-18.

Method for manufacturing a copper-free cdte based thin film solar cell device

Номер патента: WO2024055246A1. Автор: SHOU PENG,Marko Swoboda,Xinjian Yin,Ganhua FU,Christian Drost,Georgios Papageorgiou,Liyun MA,Robert Arndt. Владелец: CTF SOLAR GMBH. Дата публикации: 2024-03-21.

Method for manufacturing a semi-finished cdte based thin film solar cell device

Номер патента: EP4276920A1. Автор: SHOU PENG,Xinjian Yin,Ganhua FU,Daniele MENOSSI,Liyun MA. Владелец: China Triumph International Engineering Co Ltd. Дата публикации: 2023-11-15.

Method for manufacturing a semi-finished cdte based thin film solar cell device

Номер патента: EP4276919A1. Автор: SHOU PENG,Bettina Späth,Xinjian Yin,Ganhua FU,Liyun MA. Владелец: China Triumph International Engineering Co Ltd. Дата публикации: 2023-11-15.

Method of fabricating copper indium gallium selenide (cigs) thin film for solar cell using simplified co-vacuum evaporation and copper indium gallium selenide (cigs) thin film for solar cell fabricated by the same

Номер патента: US20140326317A1. Автор: Ara Cho,Jae-Ho Yun,Sung Woo Choi,SeJin Ahn,Jihye Gwak,Kyung Hoon YOON,Kee Shik Shin,SeoungKyu Ahn,Guk-Yeong Jeong,Hisun Park. Владелец: KOREA INSTITUTE OF NERGY RESEARCH. Дата публикации: 2014-11-06.

Thin-film patterning method, manufacturing method of thin-film device and manufacturing method of thin-film magnetic head

Номер патента: US20010027029A1. Автор: Akifumi Kamijima. Владелец: TDK Corp. Дата публикации: 2001-10-04.

Manufacturing method for a semiconductor device

Номер патента: US20160027682A1. Автор: Satoshi Kato,Hiroyuki Fukumizu,Kenichi Yoshino,Shintaro Okujo. Владелец: Toshiba Corp. Дата публикации: 2016-01-28.

Method for forming isolation layer in semiconductor device

Номер патента: US20030119266A1. Автор: Cheol Park. Владелец: Dongbu Electronics Co Ltd. Дата публикации: 2003-06-26.

Method for fabricating a shield gate trench MOSFET

Номер патента: US09761695B1. Автор: Rangxuan Fan,Jinzheng Miao. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Дата публикации: 2017-09-12.

Etching method, method for producing dielectric film of low dielectric constant, method for producing porous member, etching system and thin film forming equipment

Номер патента: EP1881525A1. Автор: Hitoshi MITSUBISHI HEAVY INDUSTRIES LTD SAKAMOTO,Chikako HITEC Co. Ltd. KOBAYASHI. Владелец: Phyzchemix Corp. Дата публикации: 2008-01-23.

Thin film etchant composition and method of forming metal pattern by using the same

Номер патента: US20190368053A1. Автор: Changsoo Kim,Sangtae Kim,Daesung Lim,Dongki Kim,Byungsu LEE,Jinhyung Kim,Jinsook Kim,Joohwan Chung,Haccheol Kim,Jungseek Jung,Giyong NAM,Youngchul Park,Kyungbo SHIM,Sanghoon JANG. Владелец: Samsung Display Co Ltd. Дата публикации: 2019-12-05.

METHOD FOR PROTECTING INTEGRATED CIRCUIT CHIPS BY INSULATING THIN FILM DEPOSITION

Номер патента: FR2797995B1. Автор: Philippe Patrice. Владелец: Gemplus SA. Дата публикации: 2002-03-22.

Method for forming multi-layer horizontal NOR type thin film memory string

Номер патента: CN113169170A. Автор: J.周,S.B.赫纳,W-Y.H.钱,E.哈拉里. Владелец: Sunrise Memory Corp. Дата публикации: 2021-07-23.

Thin-Film Resistor (TFR) Formed Under a Metal Layer and Method of Fabrication

Номер патента: US20190348494A1. Автор: Leng Yaojian,TAYLOR Andrew,Sato Justin,Hamlin Bonnie,Vanderiet Janet. Владелец: MICROCHIP TECHNOLOGY INCORPORATED. Дата публикации: 2019-11-14.

Semiconductor test structure and method for manufacturing same

Номер патента: US20230290696A1. Автор: Rui Ding. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-09-14.

Method for manufacturing multi-gate transistor device

Номер патента: US20130122698A1. Автор: Chia-Lin Hsu,Chien-Hao Chen,Yung-Lun Hsieh,Bo-Syuan Lee,Chin-I Liao,Ming-Yen Li,Min-Ying Hsu,Hsin-Huei Wu. Владелец: Individual. Дата публикации: 2013-05-16.

Method for forming via structure with low resistivity

Номер патента: US20240055522A1. Автор: Kuo-Chiang Tsai,Jyh-Huei Chen,Ke-Jing Yu,Fu-Hsiang Su,Chih-Hong Hwang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-15.

A method for controlling stress in thin film layers deposited over a high density interconnect common circuit base

Номер патента: EP1114573A1. Автор: Jan I. Strandberg,Scott M. Westbrook. Владелец: Kulicke and Soffa Holdings Inc. Дата публикации: 2001-07-11.

Semiconductor device and method for manufacturing the same

Номер патента: US09559212B2. Автор: Kengo Akimoto,Toshinari Sasaki,Hideaki Kuwabara. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2017-01-31.

Method for forming thin film on basic material through intermediate layer

Номер патента: EP1557485A4. Автор: Katsuya Hasegawa,Teruo Izumi,Yuh Shiohara,Tsukasa Hirayama,Yoshihiro Sugawara,Fumiyasu Oba,Yuichi Ikuhara. Владелец: International Superconductivity Technology Center. Дата публикации: 2007-10-03.

Semiconductor device with programmable unit and method for fabricating the same

Номер патента: US20220173045A1. Автор: Te-Yin Chen. Владелец: Nanya Technology Corp. Дата публикации: 2022-06-02.

Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same

Номер патента: US12071690B2. Автор: Jooho Lee,Yongsung Kim,Narae HAN,Jeonggyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-27.

Thin film transistor array substrate and method for manufacturing the same

Номер патента: US20040124451A1. Автор: Seung Nam,Jae Oh. Владелец: LG Philips LCD Co Ltd. Дата публикации: 2004-07-01.

Organic light emitting diode display with improved on-current, and method for manufacturing the same

Номер патента: US8232123B2. Автор: Jong-Moo Huh,Joon-hoo Choi,Kyu-Sik Cho,Byoung-Seong JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-07-31.

Organic light emitting diode display and method for manufacturing the same

Номер патента: US20120262433A1. Автор: Jong-Moo Huh,Joon-hoo Choi,Kyu-Sik Cho,Byoung-Seong JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-10-18.

Semiconductor device with uneven electrode surface and method for fabricating the same

Номер патента: US20230105066A1. Автор: Tsu-Chieh AI. Владелец: Nanya Technology Corp. Дата публикации: 2023-04-06.

Stress-induced selective-area lift-off of thin films and devices on van der waals buffer layers

Номер патента: US20220216109A1. Автор: Michael R. Snure,Eric W. Blanton,Jeff L. Brown,Albert M. Hilton. Владелец: Govemment Of United States Represented By Secretary Of Air Force AS. Дата публикации: 2022-07-07.

Conductive layers in memory array region and methods for forming the same

Номер патента: US12057317B2. Автор: Kenichi Sugino,Keisuke Shimada,Mitsunari Sukekawa,Yasutaka Iuchi. Владелец: Micron Technology Inc. Дата публикации: 2024-08-06.

Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same

Номер патента: US20230399749A1. Автор: Jooho Lee,Yongsung Kim,Bo-eun Park,Jeonggyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-12-14.

Method for fabricating a driving circuit board

Номер патента: US20230361134A1. Автор: Chuanbao LUO. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-11-09.

Method for manufacturing semiconductor device and plasma oxidation treatment method

Номер патента: US20120270383A1. Автор: Yoshitaka Yamamoto,Hidekazu Miyairi,Kanta Abe,Takashi Ienaga,Tetsuhiro Tanaka. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-10-25.

Encapsulating thin film, production method thereof, and method for encapsulating display panel

Номер патента: US20190165307A1. Автор: Yang Xu,Tao Jin,Jianhui Zhang,Yong Cui,Biao TIAN,Tianfeng Pan,Jieshu Wu,Lihao ZHAO. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2019-05-30.

Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate

Номер патента: US09805936B2. Автор: Takayuki Sone,Ryosuke Harada,Kazuharu Suzuki,Shunichi Nabeya,Michihiro YOKOO. Владелец: Tanaka Kikinzoku Kogyo KK. Дата публикации: 2017-10-31.

Electrical device and method for manufacturing the same

Номер патента: US20050206001A1. Автор: Hideyuki Kawai. Владелец: Seiko Epson Corp. Дата публикации: 2005-09-22.

Array substrate, method for manufacturing the array substrate and display panel

Номер патента: US20240178238A1. Автор: Guangcai Yuan,Dongfang Wang,ce Ning. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-05-30.

Semiconductor device and method for manufacturing the same

Номер патента: US09508619B2. Автор: Tomoyuki Aoki,Hisashi Ohtani,Hiroki Adachi,Takuya Tsurume,Nozomi Horikoshi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-29.

Organic light emitting diode display having high aperture ratio and method for manufacturing the same

Номер патента: US09443920B2. Автор: Soyoung Noh,Jeongoh Kim. Владелец: LG Display Co Ltd. Дата публикации: 2016-09-13.

Method for forming micro contacts of semiconductor device

Номер патента: US5550071A. Автор: Eui K. Ryou. Владелец: Hyundai Electronics Industries Co Ltd. Дата публикации: 1996-08-27.

Panel substrate and method for manufacturing micro-LED display device including the same

Номер патента: GB2625866A. Автор: LEE SUMIN,Chang Eun-Soo,Yoon Sangsoon,KIM Juhyuk,KIM Byonghoo,SOHN A-Ram,Son Hyokyeong. Владелец: LG Display Co Ltd. Дата публикации: 2024-07-03.

Array substrate and method for manufacturing the same, and display device

Номер патента: US09515095B2. Автор: Qi Yao,Feng Zhang,Zhiyong Liu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-12-06.

Thin film transistor substrate and display using the same

Номер патента: US09954014B2. Автор: Kitae Kim,Eunsung KIM,JinChae JEON,Soyoung Noh,Uijin Chung,Hyunsoo Shin,Wonkyung KIM,Jeihyun LEE,JunHo Lee,Jihye Lee,Hyojin Kim,Kyeongju Moon,YoungJang Lee,Seungchan CHOI,Jeanhan YOON,Sungbin Ryu,Bokyoung CHO,Soyeon JE. Владелец: LG Display Co Ltd. Дата публикации: 2018-04-24.

Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same

Номер патента: US11761089B2. Автор: Jooho Lee,Yongsung Kim,Bo-eun Park,Jeonggyu SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-19.

Array substrate for liquid crystal display and method for fabricating the same

Номер патента: US20100187536A1. Автор: Yu-Cheng Chen,Chen-Yueh Li. Владелец: AU OPTRONICS CORP. Дата публикации: 2010-07-29.

Thin film and method for manufacturing thin film

Номер патента: US20160056068A1. Автор: Wen Hu,Hui Hu. Владелец: Jinan Jingzheng Electronics Co Ltd. Дата публикации: 2016-02-25.

Soi substrate and method for manufacturing soi substrate

Номер патента: US20120098086A1. Автор: Shunpei Yamazaki,Yasuyuki Arai,Maki Togawa. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2012-04-26.

Manufacturing method for semiconductor structure, and pixel structure and manufacturing method for the same

Номер патента: US20120153392A1. Автор: Isaac Wing-Tak Chan,Chih-Hung Cheng. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2012-06-21.

Gate structure and method for fabricating the same, and method for fabricating memory and CMOS transistor layout

Номер патента: US7538018B2. Автор: Jung-Wu Chien. Владелец: Promos Technologies Inc. Дата публикации: 2009-05-26.

Gate structure and method for fabricating the same, and method for fabricating memory and cmos transistor layout

Номер патента: US20080138970A1. Автор: Jung-Wu Chien. Владелец: Promos Technologies Inc. Дата публикации: 2008-06-12.

Semiconductor device and method for manufacturing the same

Номер патента: US20080111201A1. Автор: Yong Ho Oh. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2008-05-15.

Damascene patterning for thin-film transistor fabrication

Номер патента: WO2019009873A1. Автор: Kevin Lin,Jack Kavalieros,Van Le. Владелец: Intel Corporation. Дата публикации: 2019-01-10.

Semiconductor device with uneven electrode surface and method for fabricating the same

Номер патента: US11823992B2. Автор: Tsu-Chieh AI. Владелец: Nanya Technology Corp. Дата публикации: 2023-11-21.

Semiconductor device with programmable unit and method for fabricating the same

Номер патента: US20220223521A1. Автор: Tse-Yao Huang,Hsih-Yang Chiu. Владелец: Nanya Technology Corp. Дата публикации: 2022-07-14.

Thin film transistor and method of manufacturing the same

Номер патента: US20080064151A1. Автор: Woo-Young So. Владелец: Samsung SDI Co Ltd. Дата публикации: 2008-03-13.

Method for forming an insulator between layers of conductive material

Номер патента: CA1120608A. Автор: Jacob Riseman. Владелец: International Business Machines Corp. Дата публикации: 1982-03-23.

Array substrate, method for fabricating same, and display panel

Номер патента: US20240063233A1. Автор: Chuanbao LUO. Владелец: TCL China Star Optoelectronics Technology Co Ltd. Дата публикации: 2024-02-22.

Method for producing contact holes

Номер патента: US5728609A. Автор: Martin Kerber. Владелец: SIEMENS AG. Дата публикации: 1998-03-17.

Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template

Номер патента: US20100203711A1. Автор: David Xuan-Qi Wang,Mehrdad Moslehi. Владелец: Solexel Inc. Дата публикации: 2010-08-12.

Lamination system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip

Номер патента: US20190147312A1. Автор: Naoto Kusumoto,Ryosuke Watanabe,Osamu Nakamura. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2019-05-16.

Display panel, array substrate, thin film transistor and method for manufacturing the same

Номер патента: US20200168744A1. Автор: Wei Li,Jun Liu,Jun Wang,Liangchen YAN,Guangyao LI,Yingbin HU,Ce ZHAO,Yuankui Ding,Yongchao HUANG. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2020-05-28.

Organic light-emitting display device and method for manufacturing the same

Номер патента: US20220069059A1. Автор: Kiyoung Jung. Владелец: LG Display Co Ltd. Дата публикации: 2022-03-03.

Liquid crystal display device integrated with driving circuit and method for fabricating the same

Номер патента: US5969377A. Автор: Seong Moh Seo. Владелец: LG ELECTRONICS INC. Дата публикации: 1999-10-19.

Apparatus and Method for Manufacturing of Thin Film Type Solar Cell

Номер патента: US20120064660A1. Автор: Cheol Hoon Yang. Владелец: Jusung Engineering Co Ltd. Дата публикации: 2012-03-15.

Thin-film transistor array substrate for AMOLED and manufacturing method thereof

Номер патента: US10157970B2. Автор: Hejing ZHANG. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-12-18.

Thin film semiconductor device and manufacturing method thereof

Номер патента: US20030027405A1. Автор: Hisao Hayashi. Владелец: Individual. Дата публикации: 2003-02-06.

Thin film transistor and manufacturing method thereof, array substrate, and display apparatus

Номер патента: US09484468B2. Автор: LIANG XIAO,Yunqi Zhang,Liang Peng,Jian Wang,Daowu HUANG,Sangsoo Park,Xunze ZHANG,Liumin YU,Weihua FANG,Yanrui SHEN,Zhiyuan DONG,Longlong DUAN. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-01.

Method for amorphizing a material by means of injection of exotic atoms into a solid with electron beams

Номер патента: US4668527A. Автор: Hiroshi Fujita,Naoto Sumida. Владелец: Osaka University NUC. Дата публикации: 1987-05-26.

Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device have the thin film transistor

Номер патента: US20110084262A1. Автор: Hye-dong Kim,Dong-Wook Park,Yeon-Gon Mo,Ki-Ju Im,Roman KONDRATYUK. Владелец: Samsung Mobile Display Co Ltd. Дата публикации: 2011-04-14.

Method for packaging target material and method for mounting target

Номер патента: US20110114480A1. Автор: Keiji Sato,Shunpei Yamazaki,Toru Takayama. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2011-05-19.

Thin film transistor substrate, display apparatus, and method of manufacturing the thin film transistor substrate

Номер патента: US11910648B2. Автор: Keunwoo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-02-20.

Thin film transistor substrate, display apparatus, and method of manufacturing the thin film transistor substrate

Номер патента: US20240164141A1. Автор: Keunwoo Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-05-16.

Thin film transistor substrate and display apparatus comprising the same

Номер патента: US20230329047A1. Автор: Wonsang Ryu,Hanseok Lee,Youngyoung Chang,Youngjin Yi,Sungsoo SHIN,Yubeen LIM,JungJune KIM,Jihwan JUNG,Jungyul YANG,Soyang CHOI. Владелец: LG Display Co Ltd. Дата публикации: 2023-10-12.

Method for manufacturing novel compound, raw material for thin film formation, and thin film

Номер патента: EP3312187A1. Автор: Akihiro Nishida,Masaki Enzu,Tomoharu Yoshino,Nana SUGIURA. Владелец: Adeka Corp. Дата публикации: 2018-04-25.

Method for forming multi-layer conductor / insulator coplanar thin film using photosensitive polyimide polymer composition

Номер патента: JPH0831522B2. Автор: エドワード クロニン ジョン,ウェリング カーンタ カーター,ポール リー ペイ−イン,アン プレヴィティ−ケリー ローズマリー,ガードナー ライアン ジェイムズ,フーン ユーン ジュン. Владелец: International Business Machines Corp. Дата публикации: 1996-03-27.

Method for vacuum-treating a channel of a thin film transistor provided on a substrate, thin film transistor and apparatus for vacuum-treating a substrate

Номер патента: CN112048698A. Автор: 马库斯·哈尼卡,约瑟夫·C·奥尔森,彼得·F·库伦齐,尹东基,马库斯·本德. Владелец: Applied Materials Inc. Дата публикации: 2020-12-08.

Thin film transistor array panel and method of manufacturing the same

Номер патента: US20170278977A1. Автор: Hyun Min Cho,Yu-gwang Jeong,Shin Il Choi,Su Bin Bae. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-09-28.

Thin film transistor array substrate including oxide semiconductor pattern and display device including the same

Номер патента: US20240038902A1. Автор: Jae Yoon Park,Jin Won Jung,Chan Yong Jeong,Sung Ju Choi,Jung Seok Seo,Seo Yeon Im,Young Hyun KO. Владелец: LG Display Co Ltd. Дата публикации: 2024-02-01.

Method for fabricating a display substrate

Номер патента: US20190043893A1. Автор: Feng Zhang,Zhiyong Liu,Liwen Dong,Zhijun LV,Wenqu Liu,Shizheng ZHANG,Ning DANG. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2019-02-07.

Method for fabricating a display substrate

Номер патента: US10325929B2. Автор: Feng Zhang,Zhiyong Liu,Liwen Dong,Zhijun LV,Wenqu Liu,Shizheng ZHANG,Ning DANG. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2019-06-18.

Thin film transistor and manufacturing method therefor, display panel and display apparatus

Номер патента: US20190027610A1. Автор: Li Lin,Song Liu,Kun Hu,Qi Shan. Владелец: Kunshan New Flat Panel Display Technology Center Co Ltd. Дата публикации: 2019-01-24.

Thin-film transistor structure and manufacturing method thereof, display panel and display device

Номер патента: US20190267409A1. Автор: WEI YANG,YU Wen,Ke Wang,Hehe HU,Xinhong Lu. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2019-08-29.

Thin film transistor and manufacturing method thereof, display substrate, and display apparatus

Номер патента: US20180114933A1. Автор: Wei Huang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2018-04-26.

Thin film transistor array substrate including oxide semiconductor pattern and display device including the same

Номер патента: US20240072064A1. Автор: Jae Yoon Park,Jin Won Jung,Sung Ju Choi,Jung Seok Seo,Seo Yeon Im. Владелец: LG Display Co Ltd. Дата публикации: 2024-02-29.

Display panel with color organic light-transmissive thin films and manufacturing method thereof

Номер патента: US11937482B2. Автор: WENXU Xianyu,Wenliang GONG. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2024-03-19.

Conformal titanium nitride-based thin films and methods of forming same

Номер патента: US20210104433A1. Автор: Sung-hoon Jung,Niloy Mukherjee,Hae Young Kim,Jae Seok Heo,Yoshikazu Okuyama,Nariman Naghibolashrafi,Bunsen B. Nie,Somilkumar J. Rathi,Jerry Mack,Srishti Chugh. Владелец: Eugenus Inc. Дата публикации: 2021-04-08.

Conformal titanium nitride-based thin films and methods of forming same

Номер патента: WO2021071628A1. Автор: Sung-hoon Jung,Niloy Mukherjee,Hae Young Kim,Jae Seok Heo,Yoshikazu Okuyama,Nariman Naghibolashrafi,Bunsen B. Nie,Somilkumar J. Rathi,Jerry Mack,Srishti Chugh. Владелец: Eugenus, Inc.. Дата публикации: 2021-04-15.

Reaction apparatus and method for manufacturing a cigs absorber of a thin film solar cell

Номер патента: US20160013338A1. Автор: Delin Li. Владелец: Soltrium Tech Ltd Shenzhen. Дата публикации: 2016-01-14.

METHOD FOR IMPROVING THRESHOLD VOLTAGE OF OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR

Номер патента: US20180374713A1. Автор: Wang Xuanyun. Владелец: . Дата публикации: 2018-12-27.

METHOD FOR MANUFACTURING A STACKED STRUCTURE COMPRISING A THIN FILM ADHERING TO A TARGET SUBSTRATE

Номер патента: FR2816445A1. Автор: Fabrice Letertre,Bernard Aspar,Hubert Moriceau,Eric Jalaguier. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 2002-05-10.

Preparing method for ultrathin self-supporting monocrystal barium titanate thin film

Номер патента: CN104733292B. Автор: 陆小力,郝跃,张春福,张进成,张吉文. Владелец: Xidian University. Дата публикации: 2017-05-17.

Thin film transistor having barrier layer as constituent layer and Cu alloy sputtering target used for sputtering film formation of said barrier layer

Номер патента: JP5354781B2. Автор: 曉 森,洋介 中里,一誠 牧,兼一 谷口. Владелец: Ulvac Inc. Дата публикации: 2013-11-27.

ICP etching machine and its insulation window thin film heater device and temperature control method capable of facilitating disassembly and assembly of the thin film heater, simplifying maintenance process of the thin film heater and the insulation window, saving manpower and time cost

Номер патента: TW201831055A. Автор: 左濤濤,狄 吳. Владелец: 中微半導體設備（上海）有限公司. Дата публикации: 2018-08-16.

Method for producing a stack of semi-conductor thin films

Номер патента: US8513092B2. Автор: Didier Landru. Владелец: Soitec SA. Дата публикации: 2013-08-20.

Metal oxide thin film transistor device with positive charge blocking layer and preparation method of metal oxide thin film transistor device

Номер патента: CN105742172A. Автор: 李俊,张志林,蒋雪茵,黄传鑫. Владелец: UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY. Дата публикации: 2016-07-06.

Method for producing a stack of semi-conductor thin films

Номер патента: CN102187451A. Автор: D·朗德吕. Владелец: Soitec SA. Дата публикации: 2011-09-14.

Method for producing bumps for chip embedding in thin-film assemblies

Номер патента: DE19904138B4. Автор: Wolf-Dieter Nohr,Gerhard Hanke. Владелец: DEUTSCHE TELEKOM AG. Дата публикации: 2008-10-16.

Thin film transistor, array substrate and manufacturing method thereof, and display panel

Номер патента: US9166059B2. Автор: Won Seok Kim,Pil Seok KIM. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2015-10-20.

Method for improving threshold voltage of oxide semiconductor thin-film transistor

Номер патента: EP3644347A4. Автор: Xuanyun Wang. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2021-03-10.

SYSTEMS AND METHODS FOR DEPOSITING MATERIALS ON EITHER SIDE OF A FREESTANDING FILM USING SELECTIVE THERMALLY-ASSISTED CHEMICAL VAPOR DEPOSITION (STA-CVD), AND STRUCTURES FORMED USING SAME

Номер патента: US20130187169A1. Автор: TAYLOR David P.,ABRAHAM Margaret H.. Владелец: . Дата публикации: 2013-07-25.

Thin film transistor, organic light-emitting display apparatus including the same, and method of manufacturing the thin film transistor

Номер патента: US20150028300A1. Автор: Yeon-Gon Mo,Kwang-Suk Kim,Jong-Han Jeong. Владелец: Samsung Display Co Ltd. Дата публикации: 2015-01-29.

Thin film transistor substrate, method of manufacturing the same, and organic light emitting device having the Thin film transistor substrate

Номер патента: KR101137391B1. Автор: 박승규,이동현,서진욱,정윤모,정민재,이기용,이탁영,박병건,이길원,박종력,소병수,손용덕,정재완. Владелец: 삼성모바일디스플레이주식회사. Дата публикации: 2012-04-20.

Thin film transistor substrate, method of manufacturing the same, and organic light emitting device having the thin film transistor substrate

Номер патента: KR20110107189A. Автор: 박승규,이동현,서진욱,정윤모,정민재,이기용,이탁영,박병건,이길원,박종력,소병수,손용덕,정재완. Владелец: 삼성모바일디스플레이주식회사. Дата публикации: 2011-09-30.

Semiconductor device and method for manufacturing the same

Номер патента: US20100025851A1. Автор: Byung-Ho Lee. Владелец: Dongbu HitekCo Ltd. Дата публикации: 2010-02-04.

Method for fabricating semiconductor device and pmos device fabricated by the method

Номер патента: US20130234216A1. Автор: Chih-Chung Chen,Chun-Chia Chen,Shih-Chieh Hsu,Shao-Hua Hsu,Chi-Horn Pai,Ying-Hung Chou,Zen-Jay Tsai,Shih-Hao Su. Владелец: United Microelectronics Corp. Дата публикации: 2013-09-12.

Method for manufacturing semiconductor device

Номер патента: US11923205B2. Автор: Chun-Han Chen,Chau-Chung Hou,Wei-Xin Gao,Fu-Shou Tsai,I-Ming Lai,Kun-Ju Li,Hsin-Jung Liu,Ang CHAN,Jhih-Yuan Chen,Zong-Sian Wu. Владелец: United Microelectronics Corp. Дата публикации: 2024-03-05.

Semiconductor structure and method for manufacturing semiconductor structure

Номер патента: US11961798B2. Автор: Ping-Heng Wu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-04-16.

Method for forming trenches and trench isolation on a substrate

Номер патента: US20120190168A1. Автор: Ching-Hung Kao. Владелец: United Microelectronics Corp. Дата публикации: 2012-07-26.

Method for manufacturing semiconductor device

Номер патента: US20240170299A1. Автор: Chun-Han Chen,Chau-Chung Hou,Wei-Xin Gao,Fu-Shou Tsai,I-Ming Lai,Kun-Ju Li,Hsin-Jung Liu,Ang CHAN,Jhih-Yuan Chen,Zong-Sian Wu. Владелец: United Microelectronics Corp. Дата публикации: 2024-05-23.

Semiconductor device and method for manufacturing the same

Номер патента: US20160043030A1. Автор: Kun-Yuan Liao,Feng-Yi Chang,Chun-Lung Chen,Chia-Lin Lu. Владелец: United Microelectronics Corp. Дата публикации: 2016-02-11.

Method for manufacturing vertically-growing open carbon nanotube thin film

Номер патента: US09884768B2. Автор: YANG Zhao,Zhaoxiang Zhong,Zhong YAO. Владелец: NANJING TECH UNIVERSITY. Дата публикации: 2018-02-06.

Temperature clamping method for anti-contamination and collimating devices for thin film processes

Номер патента: US5598622A. Автор: Ivo J. Raaijmakers. Владелец: Applied Materials Inc. Дата публикации: 1997-02-04.

Magnetoresistive effect element, thin-film magnetic head with magnetoresistive effect read head element, and magnetic disk drive apparatus with thin-film magnetic head

Номер патента: US20100177447A1. Автор: Takumi YANAGISAWA. Владелец: TDK Corp. Дата публикации: 2010-07-15.

Method for evaluating quality of oxide semiconductor thin film and laminated body having protective film on surface of oxide semiconductor thin film, and method for managing quality of oxide semiconductor thin film

Номер патента: US20170194218A1. Автор: Toshihiro Kugimiya,Nobuyuki Kawakami,Mototaka Ochi,Kazushi HAYASI. Владелец: Kobe Steel Ltd. Дата публикации: 2017-07-06.

Method for evaluating quality of oxide semiconductor thin film and laminated body having protective film on surface of oxide semiconductor thin film, and method for managing quality of oxide semiconductor thin film

Номер патента: US09780005B2. Автор: Kazushi Hayashi,Toshihiro Kugimiya,Nobuyuki Kawakami,Mototaka Ochi. Владелец: Kobe Steel Ltd. Дата публикации: 2017-10-03.

Array substrate, flat panel detector, and method for manufacturing array substrate

Номер патента: US12068355B2. Автор: Jie Huang,Kun Zhao,Zhengliang Li,ce Ning,Hehe HU,Jiayu HE,Nianqi YAO. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-08-20.

Integrated circuit combination of a target integrated circuit and a plurality of thin film photovoltaic cells connected thereto using a conductive path

Номер патента: US09698299B2. Автор: Shani Keysar,Reuven Holzer,Ofer Navon,Ram Friedlander. Владелец: SOL CHIP Ltd. Дата публикации: 2017-07-04.

Thin-film transistor and solid-state imaging apparatus

Номер патента: US20140070222A1. Автор: Tatsuya Ohguro. Владелец: Individual. Дата публикации: 2014-03-13.

Semiconductor device and method for fabricating thereof

Номер патента: US09929203B1. Автор: Keng-Ying Liao,Yi-Hung Chen,Chih-Yu Wu,Chih-Wei SUNG,Yi-Fang YANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-27.

Method for fabricating semiconductor device with air gap

Номер патента: US20230180461A1. Автор: Liang-Pin Chou. Владелец: Nanya Technology Corp. Дата публикации: 2023-06-08.

Display panel, method for fabricating same, and display device comprising same

Номер патента: US20210036071A1. Автор: Fuyang ZHANG. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2021-02-04.

Fractal-edge thin film and method of manufacture

Номер патента: US09679940B2. Автор: Oray Orkun Cellek. Владелец: Omnivision Technologies Inc. Дата публикации: 2017-06-13.

An integrated micro-inverter and thin film solar module and manufacturing process

Номер патента: WO2015022109A1. Автор: Markus Schmidt,Hans-Juergen Eickelmann,Ruediger Kellmann,Hartmut Kuehl. Владелец: IBM Deutschland GmbH. Дата публикации: 2015-02-19.

Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

Номер патента: US20210391374A1. Автор: Makoto Nakazawa,Hiroyuki Moriwaki,Rikiya Takita,Tetsuya Tanishima. Владелец: Sharp Corp. Дата публикации: 2021-12-16.

Array substrate, flat panel detector, and method for manufacturing array substrate

Номер патента: US20220278162A1. Автор: Jie Huang,Kun Zhao,Zhengliang Li,ce Ning,Hehe HU,Jiayu HE,Nianqi YAO. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2022-09-01.

Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

Номер патента: US11916094B2. Автор: Makoto Nakazawa,Hiroyuki Moriwaki,Rikiya Takita,Tetsuya Tanishima. Владелец: Sharp Display Technology Corp. Дата публикации: 2024-02-27.

Hybrid thin film transistor structure, display device, and method of making the same

Номер патента: US20200013807A1. Автор: Chandra LIUS,Kuan-Feng Lee,Nai-Fang HSU. Владелец: Innolux Corp. Дата публикации: 2020-01-09.

Imager having improved thin film transistor and photosensitive device structures

Номер патента: CA2048785A1. Автор: Robert F. Kwasnick. Владелец: General Electric Co. Дата публикации: 1992-04-06.

Method for making displays

Номер патента: US11088173B2. Автор: Chandra LIUS,Kuan-Feng Lee,Nai-Fang HSU. Владелец: Innolux Corp. Дата публикации: 2021-08-10.

Ferroelectric thin-film laminated substrate, ferroelectric thin-film device, and manufacturing method of ferroelectric thin-film laminated substrate

Номер патента: US20180114896A1. Автор: Hiroyuki Endo,Kenji Shibata,Kazutoshi Watanabe,Kazufumi Suenaga,Fumimasa Horikiri. Владелец: Sumitomo Chemical Co Ltd. Дата публикации: 2018-04-26.

Fractal-Edge Thin Film And Method Of Manufacture

Номер патента: US20160005774A1. Автор: Oray Orkun Cellek. Владелец: Omnivision Technologies Inc. Дата публикации: 2016-01-07.

Optoelectronic device integrated with multilayer thin-film circuitry

Номер патента: EP4169069A1. Автор: Vincent Lee,Ioannis Kymissis,Brian Tull,Israel Ramirez. Владелец: Lumiode Inc. Дата публикации: 2023-04-26.

Semiconductor structure with hybrid nanostructures and method for forming the same

Номер патента: US20210159311A1. Автор: Chih-Hao Wang,Kuo-Cheng Chiang,Kuan-Lun Cheng,Ching-Wei Tsai,Shi-Ning Ju,Guan-Lin Chen,Wen-Ting Lan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-05-27.

Method for Selective Delamination and Transfer of Thin Film Using Liquid Platform

Номер патента: US20200387073A1. Автор: Sumin Kang,Taek-Soo Kim. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2020-12-10.

Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon

Номер патента: US20090189164A1. Автор: James S. Im,Robert S. Sposili,Mark A. Crowder. Владелец: Individual. Дата публикации: 2009-07-30.

Method for cleaning receptor layer of surface stress sensor

Номер патента: US11796408B2. Автор: Takahiro Nemoto,Naoto Takeda,Genki Yoshikawa,Kosuke Minami,Kota SHIBA,Makito NAKATSU. Владелец: NATIONAL INSTITUTE FOR MATERIALS SCIENCE. Дата публикации: 2023-10-24.

Piezoelectric thin-film element, piezoelectric sensor and vibration generator

Номер патента: US09620703B2. Автор: Kenji Shibata,Kazutoshi Watanabe,Kazufumi Suenaga,Masaki Noguchi,Fumimasa Horikiri. Владелец: Sumitomo Chemical Co Ltd. Дата публикации: 2017-04-11.

Method for manufacturing ceramic substrate

Номер патента: US09437549B2. Автор: Chien-Hung Ho,Chen-Shen Kuo,Chun-Chu Wu. Владелец: Viking Tech Corp. Дата публикации: 2016-09-06.

Curved electronic device and method for manufacturing the same

Номер патента: US20230114927A1. Автор: Po-Lun Chen,Chun-Ta Chen,Po-Ching Lin,Wen-You Lai,Ping-Hsiang KAO,Ya-Chu Hsu. Владелец: Interface Optoelectronics Wuxi Co Ltd. Дата публикации: 2023-04-13.

Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film

Номер патента: TW360926B. Автор: Michio Sato,Mitsushi Ikeda,Yoshiko Tsuji,Yasuo Kohsaka,Yoshiharu Fukasawa. Владелец: Toshiba Corp. Дата публикации: 1999-06-11.

Thin film stack

Номер патента: US20150228886A1. Автор: Peter Mardilovich,James Elmer ABBOTT, Jr.,Christopher Shelton,Stephen F. BYLUND. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2015-08-13.

Method for preparing perovskite solar cell absorbing layer by means of chemical vapor deposition

Номер патента: US20220230813A1. Автор: Hyuk Kyoo Jang,Gyu Hyun LEE,So Yeon Lee. Владелец: Mecaroenergy Co Ltd. Дата публикации: 2022-07-21.

Integrated circuits having shielded mems devices and methods for fabricating shielded mems devices

Номер патента: US20170313577A1. Автор: NAGARAJAN Ranganathan,Rakesh Kumar,Humberto CAMPANELLA PINEDA,Zouhair Sbiaa,Ramachandramurthy Pradeep Yelehanka. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-11-02.

Piezoelectric mechanism having electrodes within thin film sheet that are substantially perpendicular to substrate

Номер патента: US20130105594A1. Автор: Peter Mardilovich,Tony S. Cruz-Uribe. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2013-05-02.

Piezoelectric thin film, method of manufacturing the same, piezoelectric thin film manufacturing apparatus and liquid ejection head

Номер патента: US09437806B2. Автор: Motokazu Kobayashi,Yoshinori Kotani,Naoyuki Koketsu. Владелец: Canon Inc. Дата публикации: 2016-09-06.

Titanium complex, method for production of the complex, titanium-containing thin film, and method for production of the thin film

Номер патента: CN102066313A. Автор: 岩永宏平,大岛宪昭,多田贤一,山本俊树,千叶洋一,摩庭笃,肆矢忠宽. Владелец: DAGAMI CHEMICAL RESEARCH CENTER. Дата публикации: 2011-05-18.

Titanium complex, method for production of the complex, titanium-containing thin film, and method for production of the thin film

Номер патента: KR101623142B1. Автор: 노리아키 오시마,히로카즈 치바,켄이치 타다,토시키 야마모토,코헤이 이와나가,아츠시 마니와,타다히로 요츠야. Владелец: 코우에키자이단호오징 사가미 츄오 카가쿠겡큐쇼. Дата публикации: 2016-05-20.

Titanium complex, method for production of the complex, titanium-containing thin film, and method for production of the thin film

Номер патента: CN102066313B. Автор: 岩永宏平,大岛宪昭,多田贤一,山本俊树,千叶洋一,摩庭笃,肆矢忠宽. Владелец: Central Chemical Research Institute Of Public Welfare Foundation. Дата публикации: 2014-04-02.

Piezoelectric thin film element, piezoelectric actuator, piezoelectric sensor, hard-disk drive and ink jet printer device

Номер патента: US9685602B2. Автор: Hitoshi Sakuma,Ryu OHTA. Владелец: TDK Corp. Дата публикации: 2017-06-20.

Piezoelectric thin film element, piezoelectric actuator, piezoelectric sensor, hard-disk drive and ink jet printer device

Номер патента: US20160218271A1. Автор: Hitoshi Sakuma,Ryu OHTA. Владелец: TDK Corp. Дата публикации: 2016-07-28.

THIN-FILM PIEZOELECTRIC MATERIAL SUBSTRATE, THIN-FILM PIEZOELECTRIC MATERIAL ELEMENT, HEAD GIMBAL ASSEMBLY, INK JET HEAD AND METHOD OF MANUFACTURING THE THIN-FILM PIEZOELECTRIC MATERIAL ELEMENT

Номер патента: US20170162779A1. Автор: XIONG Wei,IIJIMA Atsushi. Владелец: . Дата публикации: 2017-06-08.

THIN-FILM PIEZOELECTRIC MATERIAL SUBSTRATE, THIN-FILM PIEZOELECTRIC MATERIAL ELEMENT, HEAD GIMBAL ASSEMBLY, INK JET HEAD AND METHOD OF MANUFACTURING THE THIN-FILM PIEZOELECTRIC MATERIAL ELEMENT

Номер патента: US20190279670A1. Автор: XIONG Wei,IIJIMA Atsushi. Владелец: . Дата публикации: 2019-09-12.

Method for producing ink for forming compound semiconductor thin film

Номер патента: JP5967837B2. Автор: 山田　明,山田　　明,毅聞 張. Владелец: Toppan Inc. Дата публикации: 2016-08-10.

Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric

Номер патента: US11295770B2. Автор: Wei Xiong,Atsushi Iijima. Владелец: SAE Magnetics HK Ltd. Дата публикации: 2022-04-05.

Method for fabricating silicon nanowire using silicon nanodot thin film

Номер патента: KR100723882B1. Автор: 박종혁,맹성렬,김상협,박래만. Владелец: 한국전자통신연구원. Дата публикации: 2007-05-31.

A method for preparing Cu2ZnSn (S1-x, sex)4nanocrystalline thin film by circulating immersion

Номер патента: CN104064626A. Автор: 马帅,曹磊,董立峰,隋静. Владелец: Qingdao University of Science and Technology. Дата публикации: 2014-09-24.

Systems and methods for depositing materials on either side of a freestanding film using selective thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same

Номер патента: US9679779B2. Автор: David P. Taylor,Margaret H. Abraham. Владелец: Aerospace Corp. Дата публикации: 2017-06-13.

Method for connecting electrodes, surface-treated wiring board and adhesive film used in the method, and electrodes-connected structure

Номер патента: KR100559153B1. Автор: 유사마사미,츠카고시이사오,고토우야스시,미야데라야스오. Владелец: 히다치 가세고교 가부시끼가이샤. Дата публикации: 2006-03-10.

Method for connecting electrodes, surface-treated wiring board and adhesive film used in the method, and electrode-connected structure

Номер патента: US20030178138A1. Автор: Yasuo Miyadera,Masami Yusa,Isao Tsukagoshi,Yasushi Gotou. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2003-09-25.

Method for connecting electrodes, surface-treated wiring board and adhesive film used in the method, and electrodes-connected structure

Номер патента: TWI252066B. Автор: Yasuo Miyadera,Masami Yusa,Isao Tsukagoshi,Yasushi Gotou. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2006-03-21.

Method for connecting electrodes, surface-treated wiring board and adhesive film used in the method, and electrodes-connected structure

Номер патента: TW200303708A. Автор: Yasuo Miyadera,Masami Yusa,Isao Tsukagoshi,Yasushi Gotou. Владелец: Hitachi Chemical Co Ltd. Дата публикации: 2003-09-01.

Curved electronic device and method for manufacturing the same

Номер патента: EP4163971A1. Автор: Po Ching Lin,Po Lun Chen,Chun Ta Chen,KAO Ping Hsiang,Wen You Lai,Ya Chu Hsu. Владелец: Interface Optoelectronics Wuxi Co Ltd. Дата публикации: 2023-04-12.

Curved electronic device and method for manufacturing the same

Номер патента: US11895811B2. Автор: Po-Lun Chen,Chun-Ta Chen,Po-Ching Lin,Wen-You Lai,Ping-Hsiang KAO,Ya-Chu Hsu. Владелец: Interface Optoelectronics Wuxi Co Ltd. Дата публикации: 2024-02-06.

Field transistors for electrostatic discharge protection and methods for fabricating the same

Номер патента: US20020113269A1. Автор: Jong-Hwan Kim,Taeg-Hyun Kang,Jun-Hyeong Ryu. Владелец: Individual. Дата публикации: 2002-08-22.

Method for reducing substrate capacitive coupling of a thin film inductor by reverse p/n junctions

Номер патента: SG80666A1. Автор: Chu Shao-Fu Sanford,Min Zhu,Kai Shao. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2001-05-22.

Semiconductor device with thin film resistor

Номер патента: US5475254A. Автор: Kiyoshi Takahashi. Владелец: NEC Corp. Дата публикации: 1995-12-12.

Method for manufacturing capacitor of highly integrated semiconductor memory device

Номер патента: US5134086A. Автор: Ji-Hong Ahn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 1992-07-28.

Semiconductor structures utilizing thin film resistors and tungsten plug connectors and methods for making the same

Номер патента: WO2006071617A3. Автор: Ralph B Danzl. Владелец: Ralph B Danzl. Дата публикации: 2006-09-08.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

Номер патента: US11749522B2. Автор: Sang Ick Lee,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang,Joong Jin Park,Jeong Joo Park,Sam Dong LEE. Владелец: DNF Co Ltd. Дата публикации: 2023-09-05.

Thin-film transistor and method for making the smae

Номер патента: US20010028057A1. Автор: Tsutomu Tanaka,Hisao Hayashi,Masahiro Fujino. Владелец: Sony Corp. Дата публикации: 2001-10-11.

Method for manufacturing a thin film transistor

Номер патента: US6387738B2. Автор: Hye-dong Kim. Владелец: Samsung SDI Co Ltd. Дата публикации: 2002-05-14.

Display panel having a top surface of the conductive layer coplanar with a top surface of the pixel define layer

Номер патента: US09825256B2. Автор: Shi Shu,Yonglian QI. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-11-21.

Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component

Номер патента: US09412971B2. Автор: Thilo Reusch. Владелец: OSRAM OLED GmbH. Дата публикации: 2016-08-09.

Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same

Номер патента: US20180033914A1. Автор: Jing-En Huang,Yi-Fan Li,Sie-Jhan WU. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2018-02-01.

Method for producing a thin-film stack that can be disbonded from its substrate

Номер патента: US20170170359A1. Автор: Brendan Dunne,Stephanie Angle. Владелец: Nexcis SAS. Дата публикации: 2017-06-15.

Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same

Номер патента: US09786813B2. Автор: Jing-En Huang,Yi-Fan Li,Sie-Jhan WU. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2017-10-10.

Array substrate having via-hole conductive layer and display device

Номер патента: US09673231B2. Автор: Shi Shu,Feng Zhang,Feng Gu,Fang He,Yaohui GU. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2017-06-06.

Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same

Номер патента: US09564554B2. Автор: Jing-En Huang,Yi-Fan Li,Sie-Jhan WU. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2017-02-07.

Thin film resistor head structure and method for reducing head resistivity variance

Номер патента: EP1872389A1. Автор: Philipp Steinmann,Eric W. Beach. Владелец: Texas Instruments Inc. Дата публикации: 2008-01-02.

Thin film resistor head structure and method for reducing head resistivity variance

Номер патента: WO2006110871A8. Автор: Philipp Steinmann,Eric W Beach. Владелец: Eric W Beach. Дата публикации: 2007-04-12.

Non-volatile memory device and method for fabricating the same

Номер патента: US09287283B2. Автор: Eun-Seok Choi,Young-Wook Lee,Ki-hong Lee,Won-Joon Choi,Sang-Bum Lee,Se-Yun Lim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2016-03-15.

Method for forming a thin-film layer pattern, display substrate and manufacturing method thereof, and display device

Номер патента: US20160020231A1. Автор: Ming Tian,Junwei Wang,Liyan XU. Владелец: Beijing BOE Display Technology Co Ltd. Дата публикации: 2016-01-21.

Thin film transistor and method for manufacturing the same, array substrate, display device

Номер патента: US09502576B2. Автор: Heecheol KIM,Seungjin Choi,Youngsuk Song,Seongyeol Yoo. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-11-22.

Method for forming a thin-film layer pattern, display substrate and manufacturing method thereof, and display device

Номер патента: US09502444B2. Автор: Ming Tian,Junwei Wang,Liyan XU. Владелец: Beijing BOE Display Technology Co Ltd. Дата публикации: 2016-11-22.

Silicon thin film structure for optoelectronic devices and method for fabricating the same

Номер патента: US6483861B2. Автор: Dae-Won Moon. Владелец: Korea Research Institute of Standards and Science KRISS. Дата публикации: 2002-11-19.

Method for controlling an increase in conductivity of a polymer thin-film to provide a conductive film

Номер патента: US09825226B2. Автор: Sun Jin Yun,Changbong YEON. Владелец: Electronics and Telecommunications Research Institute ETRI. Дата публикации: 2017-11-21.

Semiconductor structures utilizing thin film resistors and tungsten plug connectors and methods for making the same

Номер патента: CA2592826A1. Автор: Ralph B. Danzl. Владелец: Ralph B. Danzl. Дата публикации: 2006-07-06.

Semiconductor structures utilizing thin film resistors and tungsten plug connectors and methods for making the same

Номер патента: EP1834357A2. Автор: Ralph B. Danzl. Владелец: MEDTRONIC INC. Дата публикации: 2007-09-19.

Semiconductor structures utilizing thin film resistors and tungsten plug connectors and methods for making the same

Номер патента: WO2006071617A2. Автор: Ralph B. Danzl. Владелец: Medtronic, Inc.. Дата публикации: 2006-07-06.

Organic thin film transistor, method for manufacturing the same and method for recoverying insulation thereof

Номер патента: US09865830B2. Автор: Myung-Han Yoon,Eui Tae Kim,Kookheon Char,Jae-Hyuk Lee. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2018-01-09.

Method for manufacturing piezoelectric device

Номер патента: US09553253B2. Автор: Takashi Iwamoto,Hajime Kando. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2017-01-24.

Segmented thin film solar cells

Номер патента: US09455361B2. Автор: Markus Schmidt,Hans-Juergen Eickelmann,Ruediger Kellmann. Владелец: Globalfoundries Inc. Дата публикации: 2016-09-27.

Thin film solar module and method for production of the same

Номер патента: US09425339B2. Автор: Frank Becker,Michael Bauer,Jochen Fritsche,Matthias Huchel. Владелец: CALYXO GMBH. Дата публикации: 2016-08-23.

METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM

Номер патента: US20170250303A1. Автор: Lee Sun Hwa,Kim Ho Sung,Jeong Chae Hwan,Boo Seong Jae,Ryu Sang. Владелец: . Дата публикации: 2017-08-31.

METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM

Номер патента: US20150280048A1. Автор: Lee Sun Hwa,Kim Ho Sung,Jeong Chae Hwan,Boo Seong Jae,Ryu Sang. Владелец: . Дата публикации: 2015-10-01.

Integrated micro-inverter and thin film solar module and manufacturing process

Номер патента: US09755099B2. Автор: Markus Schmidt,Hans-Juergen Eickelmann,Hartmut Kuehl,Ruediger Kellman. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-05.

Silicon thin film member

Номер патента: US5484658A. Автор: HISANORI Ihara,Hidetoshi Nozaki. Владелец: Toshiba Corp. Дата публикации: 1996-01-16.

Thin film photoelectric conversion device and method for manufacturing thin film photoelectric conversion device

Номер патента: US20110272771A1. Автор: Jose Briceno. Владелец: Si Nano Inc. Дата публикации: 2011-11-10.

Thin film structure and electronic device including the same

Номер патента: US20240266418A1. Автор: Hyangsook LEE,Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-08.

THIN FILM TRANSISTOR ARRAY SUBSTRATE, LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR

Номер патента: US20190319134A1. Автор: Chen Xiaoming. Владелец: . Дата публикации: 2019-10-17.

Liquid crystal writing apparatus and method for realizing local erasure by means of light irradiation

Номер патента: GB2616819A. Автор: LI Qingbo,Yang Mengxun. Владелец: SHANDONG LANBEISITE EDUCATIONAL EQUIPMENT GROUP. Дата публикации: 2023-09-27.

Array substrate and method for manufacturing same, and display device

Номер патента: US20240255817A1. Автор: Feng Xiao,Toshifumi Yagi,Yanmei Luo,Guidong Yang. Владелец: Chengdu Boe Display Technology Co ltd. Дата публикации: 2024-08-01.

Semiconductor sensor device and method for manufacturing same

Номер патента: US10732062B2. Автор: Takeshi Konno,Hiroshi Kikuchi,Kentarou MIYAJIMA,Munenori Degawa. Владелец: HITACHI AUTOMOTIVE SYSTEMS LTD. Дата публикации: 2020-08-04.

Multi layer for encapsulation comprising a planarizing organic thin layer and a conformal organic thin layer

Номер патента: US09681501B2. Автор: Kichang Lee,Giback Park,Sangcheol Nam,Hoyoung Park,Yongchang Lim,Kyugil Choi,Hosung Hwang,Jimin Kim. Владелец: Applied Materials Inc. Дата публикации: 2017-06-13.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon containing thin film using the same

Номер патента: US20220139704A1. Автор: Sang Ick Lee,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang,Joong Jin Park,Jeong Joo Park,Sam Dong LEE. Владелец: DNF Co Ltd. Дата публикации: 2022-05-05.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Номер патента: US20200111664A1. Автор: Sang Ick Lee,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang,Joong Jin Park,Jeong Joo Park,Sam Dong LEE. Владелец: DNF Co Ltd. Дата публикации: 2020-04-09.

Component comprising stacked functional structures and method for producing same

Номер патента: US09876158B2. Автор: Gudrun Henn,Thomas Metzger. Владелец: SnapTrack Inc. Дата публикации: 2018-01-23.

Method for manufacturing a photodetector for sensing light having a wavelength within a wide range

Номер патента: US5665423A. Автор: Ming-Kwei Lee. Владелец: National Science Council. Дата публикации: 1997-09-09.

Thin film encapsulation structure and display panel

Номер патента: AU2020338944A1. Автор: Ping Wen,Zhiliang Jiang,Shilong WANG. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2021-07-01.

Thin film encapsulation structure and display panel

Номер патента: AU2020338944B2. Автор: Ping Wen,Zhiliang Jiang,Shilong WANG. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2022-07-28.

Precursor for formation of europium-containing thin film, and method for forming europium-containing thin film

Номер патента: US8747965B2. Автор: Takayuki Mogi,Yoshinori Kuboshima,Shintaro Higashi,Kaoru KIKUKAWA. Владелец: Kojundo Kagaku Kenkyusho KK. Дата публикации: 2014-06-10.

Oled thin film packaging structure and method

Номер патента: US20190140215A1. Автор: Wei Yu. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2019-05-09.

Method for manufacturing memory and memory

Номер патента: US12082393B2. Автор: Tao Liu,Jun Xia,Penghui Xu,Sen Li,Qiang Wan,Kangshu ZHAN. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-03.

High Temperature Sputtered Stoichiometric Titanium Nitride Thin Films

Номер патента: US20190276925A1. Автор: Xiao Liu,Battogtokh Jugdersuren,Brian T. Kearney. Владелец: US Department of Navy. Дата публикации: 2019-09-12.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Номер патента: US20240372318A1. Автор: Dominik Scholz,Norwin von Malm. Владелец: Ams Osram International GmbH. Дата публикации: 2024-11-07.

Method for writing to a MRAM device configured for self-referenced read operation with improved reproducibly

Номер патента: US09875781B2. Автор: Quentin Stainer. Владелец: CROCUS TECHNOLOGY SA. Дата публикации: 2018-01-23.

Method for detecting the bright point in the liquid crystal display panel

Номер патента: US09507187B2. Автор: HAO SUN,Qingzeng SHAN. Владелец: Beijing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2016-11-29.

Alkali-developable curable composition, insulating thin film using the same, and thin film transistor

Номер патента: US09464172B2. Автор: Masahito Ide,Takao Manabe,Makoto Seino. Владелец: Kaneka Corp. Дата публикации: 2016-10-11.

Method of manufacturing stacked thin film piezoelectric filter

Номер патента: US09386388B2. Автор: Takashi Miyake. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2016-07-05.

Display panel including thin film transistors having different semiconductor materials from each other

Номер патента: US12022695B2. Автор: Yoon-Jong Cho,Seokje Seong,Yoonjee SHIN,Wooho Jeong,Kyunghyun Baek. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-06-25.

Method for manufacturing organic optoelectronic device and organic optoelectronic device manufactured thereby

Номер патента: US20230389404A1. Автор: Min Soo Kim,Dong Hwan WANG,Woongsik Jang. Владелец: Industry Academic Cooperation Foundation of Chung Ang University. Дата публикации: 2023-11-30.

Thin film transistor with UV light absorber layer

Номер патента: US8969868B2. Автор: Po-Tsun Liu,Han-Ping D. Shieh,Li-Feng Teng,Min-Yen Tsai,Yun-Chu TSAI. Владелец: National Chiao Tung University NCTU. Дата публикации: 2015-03-03.

Thin film Transistor with UV light Absorber Layer

Номер патента: US20140361287A1. Автор: Po-Tsun Liu,Han-Ping D. Shieh,Li-Feng Teng,Min-Yen Tsai,Yun-Chu TSAI. Владелец: National Chiao Tung University NCTU. Дата публикации: 2014-12-11.

Manufacturing method of flexible thin film solar cell module and the flexible thin film solar cell module using the same

Номер патента: US20210135029A1. Автор: Jeung-Hyun Jeong,Won Mok Kim,Hyeonggeun Yu,Jong-Keuk Park,Eunpyung CHOI. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2021-05-06.

Thin film transistor, manufacturing method of same, and cmos inverter

Номер патента: US20210366989A1. Автор: Huafei XIE. Владелец: TCL China Star Optoelectronics Technology Co Ltd. Дата публикации: 2021-11-25.

Thin film transistor, manufacturing method of same, and CMOS inverter

Номер патента: US11289543B2. Автор: Huafei XIE,Shujhih CHEN,Chiayu Lee. Владелец: TCL China Star Optoelectronics Technology Co Ltd. Дата публикации: 2022-03-29.

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

Номер патента: US09514857B2. Автор: Sang Ick Lee,Myong Woon Kim,Sang Jun Yim,Joo Young Lee,Seo Hyun Kim,Sang Do Lee,Seung Ho Yoo,Young Zo Yoo,Gun Sang Yoon,Sooho Park,Jongse Park,Hyung Soo SHIN. Владелец: Corning Precision Materials Co Ltd. Дата публикации: 2016-12-06.

Method for processing a minute structure on a surface of the silicon substrate

Номер патента: US09508880B2. Автор: Takashi Hirose,Ryosuke Motoyoshi. Владелец: Semiconductor Energy Laboratory Co Ltd. Дата публикации: 2016-11-29.

A kind of efficient method for annealing of novel amorphous oxide thin film transistor

Номер патента: CN106298547A. Автор: 张倩,孙玉梅,单福凯,刘国侠,张吉松,房洪杰,王雅慧,王军庆,仲维锋,耿广州. Владелец: Yantai Nanshan University. Дата публикации: 2017-01-04.

Piezoelectric thin film device

Номер патента: US20200176667A1. Автор: Junichi Kimura,Yukari Inoue. Владелец: TDK Corp. Дата публикации: 2020-06-04.

Thin film structure and electronic device including the same

Номер патента: EP3799538A1. Автор: Hyangsook LEE,Sangwook Kim,Yunseong LEE,Jinseong Heo,Sanghyun JO. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-03-31.

High electron mobility transistor and method for forming the same

Номер патента: US20240162313A1. Автор: Wen-Jung Liao,Chun-Ming Chang,Chih-Tung Yeh,Chun-Liang Hou,Ruey-Chyr Lee,Yi-Shan Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2024-05-16.

Method for making solar cell and solar cell

Номер патента: US20240258441A1. Автор: Wu Zhang,Wei Fan,Jiaji Lin. Владелец: Laplace Renewable Energy Technology Co Ltd. Дата публикации: 2024-08-01.

Semiconductor structure with a first lower electrode layer and a second lower electrode layer and method for manufacturing same

Номер патента: US12137550B2. Автор: Deyuan Xiao,Lixia Zhang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-11-05.

Display device, array substrate and method for manufacturing array substrate

Номер патента: US09874791B2. Автор: PARK Seoungyik,Tianlei Shi,Zailong Mo. Владелец: Chengdu BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-01-23.

Electrodeposition of thin-film cells containing non-toxic elements

Номер патента: US09450136B2. Автор: Hariklia Deligianni,Raman Vaidyanathan,Lian GUO. Владелец: International Business Machines Corp. Дата публикации: 2016-09-20.

Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component

Номер патента: US20140210112A1. Автор: Thilo Reusch. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2014-07-31.

Thin film device with additional conductive lines and method for producing it

Номер патента: US11978816B2. Автор: BASTIAN SIEPCHEN,MICHAEL HARR,SHOU PENG,KRISHNAKUMAR VELAPPAN,Xinjian Yin,Ganhua FU. Владелец: China Triumph International Engineering Co Ltd. Дата публикации: 2024-05-07.

Multi-junction solar cell and method for manufacturing the same

Номер патента: US20240213388A1. Автор: Donghwan Kim,Dongkyun Kang,Dongjin Choi,Hoyoung SONG,Yoonmook KANG,Hae-Seok Lee,Seok-hyun JEONG,MyeongSeob SIM,Jae-Keun HWANG,Solhee LEE,Dowon PYUN. Владелец: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION. Дата публикации: 2024-06-27.

Thin film transistor substrates and method of manufacturing the same

Номер патента: US20110129952A1. Автор: Ju-han Bae,Jang-Kyum KIM. Владелец: Individual. Дата публикации: 2011-06-02.

Electrodeposition of thin-film cells containing non-toxic elements

Номер патента: US20150236189A1. Автор: Hariklia Deligianni,Raman Vaidyanathan,Lian GUO. Владелец: International Business Machines Corp. Дата публикации: 2015-08-20.

Electrodeposition of thin-film cells containing non-toxic elements

Номер патента: US20150236188A1. Автор: Hariklia Deligianni,Raman Vaidyanathan,Lian GUO. Владелец: International Business Machines Corp. Дата публикации: 2015-08-20.

Electrodeposition of thin-film cells containing non-toxic elements

Номер патента: US09447514B2. Автор: Hariklia Deligianni,Raman Vaidyanathan,Lian GUO. Владелец: International Business Machines Corp. Дата публикации: 2016-09-20.

Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate

Номер патента: CA2441204A1. Автор: Yoshitada Murata. Владелец: Individual. Дата публикации: 2002-09-26.

Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same

Номер патента: US20170148952A1. Автор: Jing-En Huang,Yi-Fan Li,Sie-Jhan WU. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2017-05-25.

Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same

Номер патента: US20160104815A1. Автор: Jing-En Huang,Yi-Fan Li,Sie-Jhan WU. Владелец: GENESIS PHOTONICS INC. Дата публикации: 2016-04-14.

Thin-film transistor

Номер патента: US20040206955A1. Автор: Kun-Hong Chen. Владелец: AU OPTRONICS CORP. Дата публикации: 2004-10-21.

Flash memory device and method for manufacturing the same

Номер патента: US11289612B2. Автор: Lu-Ping chiang,Cheng-Ta Yang. Владелец: Winbond Electronics Corp. Дата публикации: 2022-03-29.

Method of forming p-n junction on zno thin film and p-n junction thin film

Номер патента: US20030183818A1. Автор: Young-Chang Kim,Sang-Yeol Lee. Владелец: Individual. Дата публикации: 2003-10-02.

Manufacturing method for LTPS (low temperature poly-silicon) thin film transistor

Номер патента: CN105489499A. Автор: 张占东. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-04-13.

Method for non-destructive, non-contact measurement of dielectric constant of thin films

Номер патента: US5528153A. Автор: Wei-Yung Hsu,Kelly J. Taylor. Владелец: Texas Instruments Inc. Дата публикации: 1996-06-18.

Thin film transistor array substrate and method for manufacturing the same

Номер патента: US8815692B2. Автор: Yongsoo Cho,Kyoho MOON,Byungyong AHN,Chanki HA. Владелец: LG Display Co Ltd. Дата публикации: 2014-08-26.

Evaluation method for oxide semiconductor thin film, quality control method for oxide semiconductor thin film, and evaluation element and evaluation device used in the evaluation method

Номер патента: US20150371906A1. Автор: Kazushi Hayashi,Toshihiro Kugimiya,Tomoya Kishi. Владелец: Kobe Steel Ltd. Дата публикации: 2015-12-24.

Method for forming crisscrossed conductive lines of thin-film solar module

Номер патента: EP4295417A1. Автор: Yilei SHEN,Bala-Krishna GADDIGOPULA. Владелец: Triumph Science & Technology Group Co Ltd. Дата публикации: 2023-12-27.

Method and apparatus for deposition of diffusion thin film

Номер патента: EP2222888A1. Автор: Si-Young Choi,Jung-Hyun Choi,Sang-Youl Bae,Sung-Youp Chung. Владелец: INTELLIGENT SYSTEM Inc. Дата публикации: 2010-09-01.

Display device and method for manufacturing display device

Номер патента: US20230395767A1. Автор: Kum Mi Oh,Sun Wook KO,Deuk Ho YEON. Владелец: LG Display Co Ltd. Дата публикации: 2023-12-07.

Display device and method for manufacturing display device

Номер патента: GB2616967A. Автор: Mi Oh Kum,Ho Yeon Deuk,Wook Ko Sun. Владелец: LG Display Co Ltd. Дата публикации: 2023-09-27.

Display apparatus comprising different types of thin film transistors and method for manufacturing the same

Номер патента: US20210193045A1. Автор: Yongseok Park,Jeongsuk YANG. Владелец: LG Display Co Ltd. Дата публикации: 2021-06-24.

Liquid crystal display and method for manufacturing the same

Номер патента: US20140322846A1. Автор: Jeong Ho Lee,Woo Yong Sung,Tae Woon CHA,Sang Gun Choi,Hyoung Wook LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-10-30.

Liquid crystal display and method for manufacturing the same

Номер патента: US20120326172A1. Автор: Jeong Ho Lee,Woo Yong Sung,Tae Woon CHA,Sang Gun Choi,Hyoung Wook LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-12-27.

Liquid crystal display and method for manufacturing the same

Номер патента: US8912026B2. Автор: Jeong Ho Lee,Woo Yong Sung,Tae Woon CHA,Sang Gun Choi,Hyoung Wook LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-12-16.

Liquid crystal display and method for manufacturing the same

Номер патента: US8809864B2. Автор: Jeong Ho Lee,Woo Yong Sung,Tae Woon CHA,Sang Gun Choi,Hyoung Wook LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2014-08-19.

Silver nano-twinned thin film structure and method for forming the same

Номер патента: US20210225793A1. Автор: Hsing-Hua TSAI,An-Chi CHUANG,Po-Ching Wu,Chung-Hsin CHOU. Владелец: AG Materials Technology Co Ltd. Дата публикации: 2021-07-22.

Silver nano-twinned thin film structure and method for forming the same

Номер патента: US11488920B2. Автор: Hsing-Hua TSAI,An-Chi CHUANG,Po-Ching Wu,Chung-Hsin CHOU. Владелец: AG Materials Technology Co Ltd. Дата публикации: 2022-11-01.

System And Method For Extraction Of Piezoelectric Constants Electrically

Номер патента: US20210349137A1. Автор: Mahmoud F.Y. AL AHMAD. Владелец: UNITED ARAB EMIRATES UNIVERSITY. Дата публикации: 2021-11-11.

Globally planarized backend compatible thin film resistor contact/interconnect process

Номер патента: US20030030107A1. Автор: Khanh Tran,Viktor Zekeriya. Владелец: Maxim Integrated Products Inc. Дата публикации: 2003-02-13.

Thin film resistor (tfr) with oxidation prevention

Номер патента: US20240282806A1. Автор: Chung-Liang Cheng,Sheng-Chau Chen,Guanyu Luo. Владелец: Taiwen Semiconductor Manufacturing Company Ltd. Дата публикации: 2024-08-22.

Single photomask high precision thin film resistor

Номер патента: US20160197135A1. Автор: Fuchao Wang,Pinghai Hao,Duofeng Yue. Владелец: Texas Instruments Inc. Дата публикации: 2016-07-07.

Dielectric thin film, method of manufacturing same, and applications thereof

Номер патента: US20130252436A1. Автор: Nobuyuki Soyama,Jun Fujii,Hideaki Sakurai. Владелец: Mitsubishi Materials Corp. Дата публикации: 2013-09-26.

Methods of forming a thin film resistor

Номер патента: US09963777B2. Автор: Bernard Patrick Stenson,Michael Noel Morrissey. Владелец: Analog Devices Inc. Дата публикации: 2018-05-08.

Single photomask high precision thin film resistor

Номер патента: US09842895B2. Автор: Fuchao Wang,Pinghai Hao,Duofeng Yue. Владелец: Texas Instruments Inc. Дата публикации: 2017-12-12.

Method for reducing forming voltage in resistive random access memory

Номер патента: US09761800B2. Автор: Jinhong Tong,Prashant B. Phatak,Ronald J. Kuse. Владелец: Intermolecular Inc. Дата публикации: 2017-09-12.

Temperature sensor device and radiation thermometer using this device, production method of temperature sensor device, multi-layered thin film thermopile using photo-resist film and radiation thermometer using this thermopile, and production method of multi-layered thin film thermopile

Номер патента: US09759613B2. Автор: Mitsuteru Kimura,Nobuo Tanaka,Hironori Shimobayashi. Владелец: HME CO Ltd. Дата публикации: 2017-09-12.

Thin film transistor array panel and liquid crystal display device including the same

Номер патента: US09490274B2. Автор: Kyung-ho Park,Woo-Jung Shin,Si Hyun AHN,Hyung Jun Park,Dong-hyun Yoo. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-11-08.

ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, MATERIAL FOR ORGANIC THIN-FILM TRANSISTOR, COMPOSITION FOR ORGANIC THIN-FILM TRANSISTOR, COMPOUND, AND ORGANIC SEMICONDUCTOR FILM

Номер патента: US20180159048A1. Автор: Goto Takashi,FUKUZAKI Eiji,Watanabe Tetsuya,Takeya Junichi,USAMI Yoshihisa,OKAMOTO Toshihiro,KOYANAGI Masashi,TSUYAMA Hiroaki. Владелец: . Дата публикации: 2018-06-07.

ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, MATERIAL FOR ORGANIC THIN-FILM TRANSISTOR, COMPOSITION FOR ORGANIC THIN-FILM TRANSISTOR, COMPOUND, AND ORGANIC SEMICONDUCTOR FILM

Номер патента: US20180159053A1. Автор: Goto Takashi,FUKUZAKI Eiji,Watanabe Tetsuya,Takeya Junichi,USAMI Yoshihisa,OKAMOTO Toshihiro,KOYANAGI Masashi,TSUYAMA Hiroaki. Владелец: . Дата публикации: 2018-06-07.

ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, MATERIAL FOR ORGANIC THIN-FILM TRANSISTOR, COMPOSITION FOR ORGANIC THIN-FILM TRANSISTOR, COMPOUND, AND ORGANIC SEMICONDUCTOR FILM

Номер патента: US20180205021A1. Автор: Goto Takashi,FUKUZAKI Eiji,Watanabe Tetsuya,Takeya Junichi,USAMI Yoshihisa,OKAMOTO Toshihiro,KOYANAGI Masashi,TSUYAMA Hiroaki. Владелец: . Дата публикации: 2018-07-19.

Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor

Номер патента: US6331208B1. Автор: Takao Yonehara,Kiyofumi Sakaguchi,Shoji Nishida,Masaaki Iwane. Владелец: Canon Inc. Дата публикации: 2001-12-18.

Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film

Номер патента: MY114592A. Автор: Takeishi Hidemi,Kamei Hidenori,Oku Yasunari,Shinagawa Shuuichi. Владелец: Matsushita Electric Ind Co Ltd. Дата публикации: 2002-11-30.

Solution for forming black oxide layer on metal thin film, method for forming black oxide layer on metal thin film of electromagnetic interference filter and metal thin film of electromagnetic interference filter formed by the same method

Номер патента: KR100582900B1. Автор: 최관민,김판수,정운석,이덕수,김창제,최광혜. Владелец: 주식회사 호진플라텍. Дата публикации: 2006-05-25.

Thin film transistor including low resistance conductive thin films and manufacturing method thereof

Номер патента: US20070187760A1. Автор: Hiroshi Furuta,Hiromitsu Ishii,Takashi Hirao,Motohiko Yoshida,Mamoru Furuta,Takahiro Hiramatsu,Hitoshi Hokari,Tokiyoshi Matsuda. Владелец: Kochi Ind Promotion Center. Дата публикации: 2007-08-16.

Solution for forming black oxide layer on metal thin film, method for forming black oxide layer on metal thin film of electromagnetic interference filter and metal thin film of electromagnetic interference filter formed by the same method

Номер патента: KR20050116570A. Автор: 최관민,김판수,정운석,이덕수,김창제,최광혜. Владелец: 주식회사 호진플라텍. Дата публикации: 2005-12-13.

Organic thin-film transistor and method for manufacturing the same, material for organic thin-film transistor, composition for organic thin-film transistor, compound, and organic semiconductor film

Номер патента: US10283719B2. Автор: Tetsuya Watanabe,Takashi Goto,Yoshihisa Usami,Toshihiro Okamoto,Eiji Fukuzaki,Hiroaki Tsuyama,Masashi Koyanagi,Junichi Takeya. Владелец: University of Tokyo NUC. Дата публикации: 2019-05-07.

Organic thin film transistor and method for manufacturing the same, material for organic thin film transistor, composition for organic thin film, compound, and organic semiconductor film

Номер патента: TW201710269A. Автор: 宇佐美由久,渡邉哲也,小柳雅史,津山博昭,岡本敏宏,竹谷純一,福﨑英治,後藤崇. Владелец: 富士軟片股份有限公司. Дата публикации: 2017-03-16.

Array substrate and method for preparing same, and display panel

Номер патента: EP4312265A2. Автор: Yan Fang,WU Wang,Xiaoyuan Wang,Shengxue WU. Владелец: Chongqing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-01-31.

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

Номер патента: US20140099443A1. Автор: Sang Ick Lee,Myong Woon Kim,Sang Jun Yim,Joo Young Lee,Seo Hyun Kim,Sang Do Lee,Seung Ho Yoo,Young Zo Yoo,Gun Sang Yoon,Sooho Park,Jongse Park,Hyung Soo SHIN. Владелец: Samsung Corning Precision Materials Co Ltd. Дата публикации: 2014-04-10.

Detection device with thin film transistors

Номер патента: US11776295B2. Автор: Hayato Kurasawa,Toshinori Uehara,Yoshitaka Ozeki,Koshiro Moriguchi. Владелец: Japan Display Inc. Дата публикации: 2023-10-03.

Array substrate and method for preparing same, and display panel

Номер патента: EP4312265A3. Автор: Yan Fang,WU Wang,Xiaoyuan Wang,Shengxue WU. Владелец: Chongqing BOE Optoelectronics Technology Co Ltd. Дата публикации: 2024-04-17.

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Номер патента: US09783563B2. Автор: Mikko Ritala,Markku Leskelä,Viljami Pore,Timo Hatanpää. Владелец: ASM International NV. Дата публикации: 2017-10-10.

Thin film transistor array panel and manufacturing method thereof

Номер патента: US09761614B2. Автор: Jae-Hyun Park,Young Jae Jeon. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-09-12.

METHOD FOR FORMING POLYCRYSTALLINE FILM, POLYCRYSTALLINE FILM AND THIN FILM TRANSISTOR FABRICATED FROM THE POLYCRYSTALLINE FILM

Номер патента: US20130277677A1. Автор: Liang Renrong,Xu Jun,Wang Jing,Zhao Lianfeng,Zhao Mei. Владелец: TSINGHUA UNIVERSITY. Дата публикации: 2013-10-24.

Thin Film Transistor Substrate and Display Apparatus Comprising the Same

Номер патента: US20240054961A1. Автор: Wonsang Ryu,Hanseok Lee,Youngyoung Chang,Hyeji JEON,Sungsoo SHIN,Jungyul YANG. Владелец: LG Display Co Ltd. Дата публикации: 2024-02-15.

Thin film transistor substrate and display device

Номер патента: US20190067218A1. Автор: Sung-Chun Lin,Chien-Ting Chan,Hsuan-Chen Liu,Hsien-Tang Hu. Владелец: Hannstar Display Corp. Дата публикации: 2019-02-28.

Thin-film transistor array substrate and display device

Номер патента: US20210143184A1. Автор: Tatsuya Kawasaki,Hajime Imai,Masaki Maeda,Hideki Kitagawa,Yoshihito Hara,Tohru Daitoh,Toshikatsu ITOH. Владелец: Sharp Corp. Дата публикации: 2021-05-13.

Method of measuring thickness of a ultra-thin film

Номер патента: US11215450B2. Автор: Kyung Joong KIM,Tae Gun Kim. Владелец: Korea Research Institute of Standards and Science KRISS. Дата публикации: 2022-01-04.

Thin film transistor array substrate and manufacture method thereof

Номер патента: US09806106B2. Автор: Xiaowen LV. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2017-10-31.

Thin film solar cells on flexible substrates and methods of constructing the same

Номер патента: US09590133B1. Автор: Roger E. Welser,Ashok K. Sood. Владелец: Magnolia Solar Inc. Дата публикации: 2017-03-07.

METHOD FOR VAPOR-PHASE GROWTH OF PHASE-CHANGE THIN FILM, AND DEVICE FOR VAPOR-PHASE GROWTH OF PHASE-CHANGE THIN FILM

Номер патента: US20170125675A1. Автор: Kobayashi Takashi,Sasago Yoshitaka,FUJISAKI Yoshihisa. Владелец: . Дата публикации: 2017-05-04.

METHOD OF FABRICATING A(C)IGS BASED THIN FILM USING Se-Ag2Se CORE-SHELL NANOPARTICLES, A(C)IGS BASED THIN FILM FABRICATED BY THE SAME, AND TANDEM SOLAR CELLS INCLUDING THE A(C)IGS BASED THIN FILM

Номер патента: US20150287854A1. Автор: Gwak Jihye,Ahn Sejin,Ahn SeoungKyu,Cho Ara,Yoo Jin-Su,Yoon Kyung Hoon,Eo Young Joo,Cho Jun Sik,Park Joo Hyung,Yun Jae Ho,Shin Kee Shik. Владелец: . Дата публикации: 2015-10-08.

A method for forming a platinum thin film having an antioxidant function on a substrate and an electronic device having a platinum thin film formed by the method

Номер патента: KR19980070383A. Автор: 이동수,윤의준,전동일,박동연,우현정. Владелец: 동양시멘트 주식회사. Дата публикации: 1998-10-26.

Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film

Номер патента: US9634162B2. Автор: Young Joo Eo,Ara Cho,SeJin Ahn,Jihye Gwak,Jin-Su Yoo,Kyung Hoon YOON,Jae Ho Yun,Kee Shik Shin,SeoungKyu Ahn,Jun Sik Cho,Joo Hyung Park. Владелец: Korea Institute of Energy Research KIER. Дата публикации: 2017-04-25.

Thin-film semiconductor device having a thin-film transistor for circuits that differs from a thin-film transistor for pixels

Номер патента: US6563136B2. Автор: Masafumi Kunii. Владелец: Sony Corp. Дата публикации: 2003-05-13.

Alkoxysilane/organic polymer composition for use in producing an insulating thin film and use thereof

Номер патента: CA2289782C. Автор: Tsuneaki Tanabe,Takaaki Ioka. Владелец: Asahi Kasei Corp. Дата публикации: 2004-07-13.

Piezoelectric thin film device

Номер патента: US20210126185A1. Автор: Junichi Kimura,Yukari Inoue. Владелец: TDK Corp. Дата публикации: 2021-04-29.

Thin film transistor structure, display panel and display device

Номер патента: US11967646B2. Автор: Liu He,FENG Jiang,Rongrong Li,Yizhen XU,Chunhui REN,Keming Yang,Qiang Leng. Владелец: HKC Co Ltd. Дата публикации: 2024-04-23.

Thin film transistor structure, display panel and display device

Номер патента: US20240088298A1. Автор: Liu He,FENG Jiang,Rongrong Li,Yizhen XU,Chunhui REN,Keming Yang,Qiang Leng. Владелец: HKC Co Ltd. Дата публикации: 2024-03-14.

Multi-junction solar cells with thin-film, polycrystalline, low-bandgap bottom cells

Номер патента: US20210391487A1. Автор: Richard R. King. Владелец: Individual. Дата публикации: 2021-12-16.

Method and apparatus for processing a conductive thin film

Номер патента: US7648906B2. Автор: Yasunari Suzuki,Koji Takei,Ryo Fukasawa,Sumihiro Ichikawa,Daisuke Matono. Владелец: Shinko Electric Industries Co Ltd. Дата публикации: 2010-01-19.

Thin-film device with a compound conductive layer

Номер патента: HK1013520A1. Автор: Ichiro Ohno,Junji Shiota. Владелец: Casio Comp Company Ltd. Дата публикации: 1999-08-27.

Electronic modules with interconnected surface metallization layers and fabrication methods therefore

Номер патента: US5466634A. Автор: Claude L. Bertin,John E. Cronin,Wayne J. Howell,Robert B. Phillips,Kenneth E. Beilstein, Jr.,James M. Leas. Владелец: International Business Machines Corp. Дата публикации: 1995-11-14.

Transparent conductive film and method for producing the same, and silicon based thin film solar cell

Номер патента: TWI584484B. Автор: 中山德行,阿部能之. Владелец: 住友金屬鑛山股份有限公司. Дата публикации: 2017-05-21.

Thin-film device with a compound conductive layer

Номер патента: EP0542271B1. Автор: Ichiro Ohno,Junji Shiota. Владелец: Casio Computer Co Ltd. Дата публикации: 1998-01-14.

Method for managing film quality of oxide semiconductor thin film

Номер патента: JP5961314B2. Автор: 和志 林,敏洋 釘宮,元隆 越智,釘宮　敏洋,信之 川上,川上　信之,博昭 田尾,林　和志. Владелец: Kobe Steel Ltd. Дата публикации: 2016-08-02.

Active matrix substrate, display device, and method for repairing defect of active matrix substrate

Номер патента: US20190319046A1. Автор: Masahiro Yoshida,Masakatsu Tominaga,Akane Sugisaka,Yasuhiro Mimura. Владелец: Sharp Corp. Дата публикации: 2019-10-17.

Pin diode including a conductive layer, and fabrication process

Номер патента: US20200227517A1. Автор: Pascal Fornara. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2020-07-16.

Pin diode including a conductive layer, and fabrication process

Номер патента: US20210335994A1. Автор: Pascal Fornara. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2021-10-28.

Liquid crystal display and method for manufacturing the same

Номер патента: US9645460B2. Автор: Yong Seok Kim,Pil Sook Kwon. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-05-09.

Thin film transistor and manufacturing method therefor, array substrate, and display device

Номер патента: US11869976B2. Автор: Feng Li,Wei Li,Lei Yan,Lei Li,Jun Fan,Yezhou FANG,Yusheng LIU,Yanyan MENG. Владелец: Ordos Yuansheng Optoelectronics Co Ltd. Дата публикации: 2024-01-09.

Light emitting element package with thin film pad and manufacturing method thereof

Номер патента: US20190348591A1. Автор: Seung Hyun Oh,Hyo Gu Jeon,Chi Gyun Song,Jung Hye PARK. Владелец: Lumens Co Ltd. Дата публикации: 2019-11-14.

Thin film transistor structure, GOA circuit, and display device

Номер патента: US11855160B2. Автор: Gongtan LI,HyunSik Seo. Владелец: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-12-26.

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Номер патента: US11814400B2. Автор: Mikko Ritala,Markku Leskelä,Viljami Pore,Timo Hatanpää. Владелец: ASM International NV. Дата публикации: 2023-11-14.

Thin-film solar cell

Номер патента: US20130160828A1. Автор: Yao-Chung Tsao,Chao-Hsiung Huang,Chen-Wei Peng. Владелец: Nexpower Technology Corp. Дата публикации: 2013-06-27.

Array substrate, display panel, and display device, including thin film transistor having increased effective length of channel region

Номер патента: US10444585B2. Автор: Lina Sun,Yiming Wang,Shoufu Jian. Владелец: Shanghai AVIC Optoelectronics Co Ltd. Дата публикации: 2019-10-15.

Liquid crystal display and method for manufacturing the same

Номер патента: US20160291433A1. Автор: Yong Seok Kim,Pil Sook Kwon. Владелец: Samsung Display Co Ltd. Дата публикации: 2016-10-06.

Oxide superconductor thin film and superconducting fault current limiter

Номер патента: US20140087951A1. Автор: Masakazu Matsui,Toshiya Kumagai,Takaaki Manabe,Kengo Nakao,Norio Matsui,Hajime Kasahara,Mitsugu Sohma,Naoto Edo. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2014-03-27.

Cis/cigs based-thin film solar cell having back side tco layer and method for manufacturing the same

Номер патента: KR101230973B1. Автор: 조아라,안승규,윤경훈,곽지혜,안세진,윤재호,신기식,어영주. Владелец: 한국에너지기술연구원. Дата публикации: 2013-02-07.

Thin film transistor and manufacturing method thereof

Номер патента: US5436184A. Автор: Takeo Muragishi. Владелец: Mitsubishi Electric Corp. Дата публикации: 1995-07-25.

Thin-film device

Номер патента: US5053845A. Автор: Koji Mori,Masanori Itagaki,Hideo Segawa. Владелец: Ricoh Co Ltd. Дата публикации: 1991-10-01.

Wafer-Scale Piezoelectric Bio-Organic Thin Films

Номер патента: US20220231218A1. Автор: FAN YANG,Jun Li,Xudong Wang. Владелец: WISCONSIN ALUMNI RESEARCH FOUNDATION. Дата публикации: 2022-07-21.

Thin film transistor array panel and method of manufacturing the same

Номер патента: US20100038648A1. Автор: Sung-Hoon Kim,Eun-Guk Lee,Sung-Wook Kang,Hyang-Shik Kong,Sung-Jae Moon,Byung-duk Yang,Sang-Yong NO,Su-Hyoung Kang,Young-Je Cho,Yeong-Beom Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-02-18.

Thin-film transistor, array substrate and fabrication method, and display device

Номер патента: WO2016107185A1. Автор: Hehe HU. Владелец: BOE Technology Group Co., Ltd.. Дата публикации: 2016-07-07.

Method of measuring thickness of a ultra-thin film

Номер патента: US20210131802A1. Автор: Kyung Joong KIM,Tae Gun Kim. Владелец: Korea Research Institute of Standards and Science KRISS. Дата публикации: 2021-05-06.

Method for Use in Making Electronic Devices Having Thin-Film Magnetic Components

Номер патента: US20130288392A1. Автор: Nozieres Jean Pierre,Reid Jason. Владелец: CROCUS TECHNOLOGY INC.. Дата публикации: 2013-10-31.

REACTION APPARATUS AND METHOD FOR MANUFACTURING A CIGS ABSORBER OF A THIN FILM SOLAR CELL

Номер патента: US20140141562A1. Автор: Li Delin. Владелец: Soltrium Technology, LTD. Shenzhen. Дата публикации: 2014-05-22.

METHOD FOR PRODUCING A TEXTURED REFLECTOR FOR A THIN-FILM PHOTOVOLTAIC CELL, AND RESULTING TEXTURED REFLECTOR

Номер патента: US20150109694A1. Автор: Ducros Cédric,Szambolics Helga. Владелец: Commissariat A L'Energie Atomique Et Aux Energies Alternatives. Дата публикации: 2015-04-23.

FULL-LASER SCRIBING METHOD FOR LARGE-AREA COPPER INDIUM GALLIUM SELENIDE THIN-FILM SOLAR CELL MODULE

Номер патента: US20180114876A1. Автор: Zhang Ning,YU Xinping,DAI Wanlei. Владелец: . Дата публикации: 2018-04-26.

Structure, Method for Manufacturing Structure, and illuminating structure of Thin Film Transistor

Номер патента: US20140374761A1. Автор: Wang Yi-Kai,Hu Tarng-Shiang,Kao Chi-Jen. Владелец: WISTRON CORP.. Дата публикации: 2014-12-25.

Methods for preparing Cu2ZnSnS4 nanoparticles for use in thin film photovoltaic cells

Номер патента: US20150376026A1. Автор: Harris James,Pickett Nigel,Gresty Nathalie,Masala Ombretta. Владелец: . Дата публикации: 2015-12-31.

METHOD FOR RAPIDLY GATHERING SUB-THRESHOLD SWING FROM THIN FILM TRANSISTOR

Номер патента: US20200365714A1. Автор: CHEN Li-Yi. Владелец: . Дата публикации: 2020-11-19.

Method for activation of cdte layer of cdte thin-film solar cells with calcium hypochlorite

Номер патента: WO2018119679A1. Автор: PENG Shou,HARR Michael,DROST CHRISTIAN,FRAUENSTEIN SVEN. Владелец: CTF SOLAR GMBH. Дата публикации: 2018-07-05.

Composition for Organic Gate Insulator, Method for Fabricating Organic Gate Insulator and Organic Thin Film Transistor Having the Same

Номер патента: KR101249097B1. Автор: 한정석,이상윤,김주영,구본원. Владелец: 삼성전자주식회사. Дата публикации: 2013-03-29.

Method for the fabrication of Cu(InGa)Se2 thin film solar cell and thereof

Номер патента: KR101668181B1. Автор: 김우경,구자석. Владелец: 영남대학교 산학협력단. Дата публикации: 2016-10-20.

Method for producing light absorption layer for chalcopyrite thin film solar cell

Номер патента: JP4680182B2. Автор: 智之 久米,貴史 小丸. Владелец: Honda Motor Co Ltd. Дата публикации: 2011-05-11.

Device and method for cooper wire setting curing in the thin film lay-up progress

Номер патента: KR101033259B1. Автор: 남주현. Владелец: 주식회사 우일하이테크. Дата публикации: 2011-05-09.

Method for manufacturing an organic-inorgnic hybrid perovskit thin film through a sequential vapor process, and solar cells

Номер патента: KR102478207B1. Автор: 박찬규,최원규,문태호. Владелец: 단국대학교 천안캠퍼스 산학협력단. Дата публикации: 2022-12-19.

Fixtures and methods for facilitating the fabrication of devices having thin film materials

Номер патента: EP1537616A2. Автор: Werner Kraus,Raymond Puffer,Jürgen PAWLIK,Glen Hoppes,Stephen Derby,Glenn Saunders,Louise Courtois. Владелец: Pemeas GmbH. Дата публикации: 2005-06-08.

Compound semiconductor material and method for forming an active layer of a thin film transistor device

Номер патента: US20060270197A1. Автор: Pang Lin,Jia-Chong Ho,Cheng-Chung Lee,Chun-Tao Lee,Jen-Hao Lee,Yu-Wu Wang. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2006-11-30.

Method for producing a textured reflector for a thin-film photovoltaic cell, and resulting textured reflector

Номер патента: WO2013160570A1. Автор: Cédric Ducros,Helga Szambolics. Владелец: Commissariat à l'énergie atomique et aux énergies alternatives. Дата публикации: 2013-10-31.

Thin-film forming apparatus, protective film forming apparatus for use in an organic electronic device and thin-film forming method of using it

Номер патента: KR101737057B1. Автор: 이재승,정태훈,구찬회,서문선. Владелец: 에이피시스템 주식회사. Дата публикации: 2017-05-18.

Method for forming Sn-Ag-Cu ternary alloy thin film

Номер патента: JP3711141B1. Автор: 茂紀 三浦. Владелец: Ｆｃｍ株式会社. Дата публикации: 2005-10-26.

Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device

Номер патента: EP0855614A1. Автор: Tatsuya Shimoda,Ichio Yudasaka,Sadao Kanbe,Wakao Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 1998-07-29.

Method for improving light trapping of series connected thin film solar cell devices

Номер патента: WO2010058012A3. Автор: Jens Guenster,Clau Maissen. Владелец: Oerlikon Solar Ip Ag, Trübbach. Дата публикации: 2010-12-23.

Thin film device provided with coating film, liquid crystal panel and electronic device, and method the thin film device

Номер патента: US6593591B2. Автор: Tatsuya Shimoda,Ichio Yudasaka,Sadao Kanbe,Wakao Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 2003-07-15.

The method for building up and scanning machine of thin film deposition layer Defect Scanning formula

Номер патента: CN110010513A. Автор: 郭浩,王恺,沈萍. Владелец: Shanghai Huali Integrated Circuit Manufacturing Co Ltd. Дата публикации: 2019-07-12.

Method for preparing copper-indium-gallium-selenide photoelectric thin film from copper chloride and gallium chloride

Номер патента: CN105932111A. Автор: 李静,石磊,徐勇,刘科高,吴海洋. Владелец: Shandong Jianzhu University. Дата публикации: 2016-09-07.

Preparing method of reduced graphene oxide film using a chemical reduction method and a pressure-assisted thermal reduction method, reduced graphene oxide film prepared by the same, and graphene electrode including the reduced graphene oxide film

Номер патента: US9236156B2. Автор: Sung Hyun Kim,Jyongsik Jang,Kyoung-Hwan SHIN. Владелец: SNU R&DB FOUNDATION. Дата публикации: 2016-01-12.

Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device

Номер патента: EP0855614A4. Автор: Tatsuya Shimoda,Ichio Yudasaka,Sadao Kanbe,Wakao Miyazawa. Владелец: Seiko Epson Corp. Дата публикации: 2001-12-19.

Method for fabricating high efficiency flexible compound semiconductor thin film solar cell with chalcopyrite system

Номер патента: WO2012043929A1. Автор: Yong-Tak Lee,Chang Young Park,Chae-Woong Kim,Yonkil Jeong,Seung-Hyeon Moon,Hee-Sang Shim. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2012-04-05.

Method for alleviating stress of flexible substrate for thin film solar cell

Номер патента: KR101877847B1. Автор: 조아라,박주형,조준식,김기환,안승규,유진수,곽지혜,안세진,윤재호,어영주. Владелец: 한국에너지기술연구원. Дата публикации: 2018-07-12.

Multi-junction solar cells with thin-film, polycrystalline, low-bandgap bottom cells

Номер патента: US11967663B2. Автор: Richard R. King. Владелец: Arizona State University ASU. Дата публикации: 2024-04-23.

Layer transfer diode or thin-film resistor for gallium nitride (gan) integrated circuit technology

Номер патента: US20240203815A1. Автор: Han Wui Then,Nachiket Venkappayya Desai,Samuel James Bader. Владелец: Intel Corp. Дата публикации: 2024-06-20.

METHOD OF FABRICATING COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILM FOR SOLAR CELL USING SIMPLIFIED CO-VACUUM EVAPORATION AND COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILM FOR SOLAR CELL FABRICATED BY THE SAME

Номер патента: US20140326317A1. Автор: Gwak Jihye,Ahn Sejin,Ahn SeoungKyu,Cho Ara,Yun Jae-Ho,Yoon Kyung Hoon,Choi Sung Woo,Shin Kee Shik,Jeong Guk-Yeong,Park Hisun. Владелец: . Дата публикации: 2014-11-06.

Thin film resistor having improved temperature independence and a method of engineering the TCR of the thin film resistor

Номер патента: US20010046771A1. Автор: Philipp Steinmann,Stuart Jacobsen,Robert Higgins. Владелец: Texas Instruments Inc. Дата публикации: 2001-11-29.

thin film of solar cell equipped yttria buffer layer and their manufacturing method

Номер патента: KR101381426B1. Автор: 하동우,고락길,김동혁,손명환,조영식,강부민. Владелец: 한국전기연구원. Дата публикации: 2014-04-07.

Oxide thin film transistor device based on composite insulation layer and preparation method thereof

Номер патента: CN107403842A. Автор: 张磊,周斌,张珊珊,刘腾飞,袁毅. Владелец: University of Electronic Science and Technology of China. Дата публикации: 2017-11-28.

Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV Cells

Номер патента: US20110220198A1. Автор: Ashish Tandon,Fred Mikulec. Владелец: CM Manufacturing Inc. Дата публикации: 2011-09-15.

GaAs thin film solar cells with taper back-scattering layer and preparation method thereof

Номер патента: CN106374001B. Автор: 谭明,陆书龙,卢建娅. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2018-01-09.

Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element

Номер патента: US20030153165A1. Автор: Yasuyoshi Takai,Masafumi Sano,Toshihiro Yamashita,Akira Sakai,Takaharu Kondo,Ryo Hayashi. Владелец: Individual. Дата публикации: 2003-08-14.

Method for manufacturing non-volatile memory device

Номер патента: US11818884B2. Автор: Chun-Hung Lin,Kao-Tsair Tsai,Chien-Hsien Wu,Yao-Ting Tsai. Владелец: Winbond Electronics Corp. Дата публикации: 2023-11-14.

Display panel, display apparatus and method for fingerprint recognition

Номер патента: US20200242320A1. Автор: Yang Zeng,FENG Lu,Qing Zhang,Haochi YU. Владелец: Shanghai Tianma Microelectronics Co Ltd. Дата публикации: 2020-07-30.

Method for Preparing Switch Transistor and Equipment for Etching the Same

Номер патента: US20140141573A1. Автор: Xiangdeng Que. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2014-05-22.

Method for manufacturing a solar cell and solar cell thereof

Номер патента: EP4376104A1. Автор: Jie Yang,Xinyu Zhang,Xiaowen Zhang,Wenqi Li,Shijie Zhao. Владелец: Jinko Solar Co Ltd. Дата публикации: 2024-05-29.

COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE WITH N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL ELEMENT

Номер патента: US20160359078A1. Автор: SATO Tetsuya,Yoshida Masato,Nojiri Takeshi,Iwamuro Mitsunori,Orita Akihiro,Machii Yoichi,Shimizu Mari,Kurata Yasushi,Ashizawa Toranosuke,SATOU Elichi. Владелец: HITACHI CHEMICAL COMPANY, LTD.. Дата публикации: 2016-12-08.

Display panel and manufacturing method for display panel

Номер патента: US11903293B2. Автор: Yang Zhang. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2024-02-13.

Display panel and manufacturing method for display panel

Номер патента: US20230240114A1. Автор: Yang Zhang. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2023-07-27.

Multi-state memory and method for manufacturing the same

Номер патента: US20200303635A1. Автор: Jing Xu,YAN Cui,Junfeng Li,Jun Luo,Yanru Li,Tianchun Ye,Wenwu Wang,Sumei WANG,Meiyin YANG. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2020-09-24.

Cerium oxide-titanium oxide composite thin film electrode

Номер патента: US20220396871A1. Автор: Muhammad Ali Ehsan,Abdul REHMAN. Владелец: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS. Дата публикации: 2022-12-15.

Magnetic shielding tape for cable and method for manufacturing thereof

Номер патента: WO2017176540A3. Автор: Jung-Ju Suh,Seong-Woo Woo,Jin-Bae Kim. Владелец: 3M INNOVATIVE PROPERTIES COMPANY. Дата публикации: 2017-11-16.

Magnetic shielding tape for cable and method for manufacturing thereof

Номер патента: US20190098805A1. Автор: Jung-Ju Suh,Seong-Woo Woo,Jinbae KIM. Владелец: 3M Innovative Properties Co. Дата публикации: 2019-03-28.

Method for manufacturing resin thin film

Номер патента: MY130795A. Автор: Kazuyoshi Honda,Masaru Odagiri,Tomonori Sato,Noriyasu Echigo,Toru Miyake,Nobuki Sunagare. Владелец: Matsushita Electric Ind Co Ltd. Дата публикации: 2007-07-31.

Homogeneous cerium oxide-titanium oxide composite thin film

Номер патента: US20220396872A1. Автор: Muhammad Ali Ehsan,Abdul REHMAN. Владелец: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS. Дата публикации: 2022-12-15.

Method for etching curved substrate

Номер патента: US11724962B2. Автор: Xiong Li,Xiangang Luo,Zeyu ZHAO,Xiaoliang Ma,Mingbo PU,Kaipeng LIU. Владелец: Institute of Optics and Electronics of CAS. Дата публикации: 2023-08-15.

Over-molded thin film antenna device

Номер патента: US20210167490A1. Автор: Francisco X. Gomez,Calin Pod. Владелец: Pctel Inc. Дата публикации: 2021-06-03.

Over-molded thin film antenna device

Номер патента: US20210066793A1. Автор: Francisco X. Gomez,Calin Pod. Владелец: Pctel Inc. Дата публикации: 2021-03-04.

Over-molded thin film antenna device

Номер патента: US11165147B2. Автор: Francisco X. Gomez,Calin Pod. Владелец: Pctel Inc. Дата публикации: 2021-11-02.

Over-molded thin film antenna device

Номер патента: CA3089229A1. Автор: Francisco X. Gomez,Calin Pod. Владелец: Pctel Inc. Дата публикации: 2021-02-28.

Over-molded thin film antenna device

Номер патента: EP3787106A1. Автор: Francisco X. Gomez,Calin Pod. Владелец: Pctel Inc. Дата публикации: 2021-03-03.

Method for manufacturing electronic parts and apparatus for manufacturing thin films

Номер патента: US20010020754A1. Автор: Kazuyoshi Honda,Masaru Odagiri,Noriyasu Echigo,Nobuki Sunagare. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2001-09-13.

Low-stress nbn superconducting thin film and preparation method and application thereof

Номер патента: US20240334841A1. Автор: Yi Feng,Chao Zhang,Di Li,Ran Duan,Lihui Yang,Zhifeng Zhao,Xiaohang Zhang,Shiling Yu. Владелец: Zhejiang Lab. Дата публикации: 2024-10-03.

Thin-film catalyst with enhanced catalyst-support interactions

Номер патента: US12027711B2. Автор: Jeffrey W. Elam,Deborah J. Myers,Alizera Pezhman Shirvanian. Владелец: UChicago Argonne LLC. Дата публикации: 2024-07-02.

Processes and materials for casting and sintering green garnet thin films

Номер патента: US12084387B2. Автор: Tim Holme,Niall DONNELLY,Oleh Karpenko,Gengfu Xu,Sriram Iyer. Владелец: Quantumscape Battery Inc. Дата публикации: 2024-09-10.

Processes and materials for casting and sintering green garnet thin films

Номер патента: US20240343652A1. Автор: Timothy Holme,Niall DONNELLY,Oleh Karpenko,Gengfu Xu,Sriram Iyer. Владелец: Quantumscape Battery Inc. Дата публикации: 2024-10-17.

Device and method for preparing high-strength high-modulus polyolefin thin film, and high-strength high-modulus polyolefin thin film

Номер патента: EP3960421A1. Автор: Yang Xu,BO Yang,Peng Liu,Lipeng ZHI,Zhanfei LV,Changfeng SUN. Владелец: Qingdao Lanketu Membrane Materials Co ltd. Дата публикации: 2022-03-02.

Device and method for preparing high-strength high-modulus polyolefin thin film, and high-strength high-modulus polyolefin thin film

Номер патента: EP3960421B1. Автор: Yang Xu,BO Yang,Peng Liu,Lipeng ZHI,Zhanfei LV,Changfeng SUN. Владелец: Qingdao Lanketu Membrane Materials Co ltd. Дата публикации: 2024-05-01.

Ferroelectric thin film formation composition, ferroelectric thin film and method of fabricating ferroelectric thin film

Номер патента: US7527822B2. Автор: Koji Sumi. Владелец: Seiko Epson Corp. Дата публикации: 2009-05-05.

Ferroelectric Thin Film Formation Composition, Ferroelectric Thin Film and Method of Fabricating Ferroelectric Thin Film

Номер патента: US20080217574A1. Автор: Koji Sumi. Владелец: Seiko Epson Corp. Дата публикации: 2008-09-11.

Ferroelectric thin film formation composition, ferroelectric thin film, and method of fabricating thin film

Номер патента: EP1493840A2. Автор: Koji Sumi. Владелец: Seiko Epson Corp. Дата публикации: 2005-01-05.

Ferroelectric thin film formation composition, ferroelectric thin film and method of fabricating ferroelectric thin film

Номер патента: US7553364B2. Автор: Koji Sumi. Владелец: Seiko Epson Corp. Дата публикации: 2009-06-30.

Ferroelectric thin film formation composition, ferroelectric thin film and method of fabricating ferroelectric thin film

Номер патента: US20050100759A1. Автор: Koji Sumi. Владелец: Individual. Дата публикации: 2005-05-12.

Ferroelectric Thin Film Formation Composition, Ferroelectric Thin Film and Method of Fabricating Ferroelectric Thin Film

Номер патента: US20080090098A1. Автор: Koji Sumi. Владелец: Seiko Epson Corp. Дата публикации: 2008-04-17.

Deposited thin films and their use in detection, attachment, and bio-medical applications

Номер патента: EP1254249B1. Автор: Stephen J. Fonash,Sanghoon Bae,Daniel J. Hayes,Joseph Cuiffi. Владелец: PENN STATE RESEARCH FOUNDATION. Дата публикации: 2007-06-20.

Mesostructured thin-films as electrocatalysts with tunable compositions and surface morphology

Номер патента: US20130209898A1. Автор: Nenad Markovic,Vojislav Stamenkovic. Владелец: Individual. Дата публикации: 2013-08-15.

METHOD FOR MANUFACTURING VERTICALLY-GROWING OPEN CARBON NANOTUBE THIN FILM

Номер патента: US20170113933A1. Автор: Zhao Yang,Zhong Zhaoxiang,YAO ZHONG. Владелец: . Дата публикации: 2017-04-27.

Method for pregaring graphene nanoplate, graphene nanoplate by the method, graphene nanoplate paste, and conductive layer including the same

Номер патента: KR20150046537A. Автор: 허승헌,김다혜,장광일,송철규. Владелец: 한국세라믹기술원. Дата публикации: 2015-04-30.

Indium tin oxide powder, method for producing same, dispersion, paint, and functional thin film

Номер патента: EP2634146A4. Автор: Shinya Shiraishi,Hirotoshi Umeda,Ai Takenoshita. Владелец: Mitsubishi Materials Electronic Chemicals Co Ltd. Дата публикации: 2015-03-11.

Double-walled carbon nanotubes and methods for production and application

Номер патента: CA2424969C. Автор: Raouf O. Loutfy,Alexander P. Moravsky. Владелец: Fullerene International Corp. Дата публикации: 2008-05-27.

Method for forming positive electrode for thin film lithium-ion rechargeable battery, positive electrode for thin film lithium-ion rechargeable battery, and thin film lithium-ion rechargeable battery

Номер патента: US20170077493A1. Автор: Akiyoshi Suzuki,Shunsuke Sasaki,Masaki Tsushima,Kazutoshi Takahashi,Takehito Jinbo. Владелец: Ulvac Inc. Дата публикации: 2017-03-16.

Thin-film switch

Номер патента: US9741501B2. Автор: Weimin Zou. Владелец: Jiangsu Transimage Technology Co Ltd. Дата публикации: 2017-08-22.

Thin-film switch

Номер патента: US20170186565A1. Автор: Weimin Zou. Владелец: Jiangsu Transimage Technology Co Ltd. Дата публикации: 2017-06-29.

Thin-film switch

Номер патента: US09741501B2. Автор: Weimin Zou. Владелец: Jiangsu Transimage Technology Co Ltd. Дата публикации: 2017-08-22.

Tactile keys and methods for their production and use

Номер патента: US20160070349A1. Автор: Douglas E. Loy,Michael Alan Marrs. Владелец: Deloy LLC. Дата публикации: 2016-03-10.

Tactile keys and methods for their production and use

Номер патента: US09851796B2. Автор: Douglas E. Loy,Michael Alan Marrs. Владелец: EMPIRE TECHNOLOGY DEVELOPMENT LLC. Дата публикации: 2017-12-26.

Cavity resonator for reducing phase noise of voltage controlled oscillator and method for fabricating the same

Номер патента: EP1041667A3. Автор: Changyul Cheon,Cimoo Samsung Advanced Institute of Tec. Song,Chungwoo Samsung Advanced Institute of Tec. Kim,Seokjin Samsung Advanced Institute of Tec. Kang,Insang Samsung Advanced Institute of Tec. Song,Yongwoo 123-902 Park Town Samik Apt. Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2001-08-16.

Methods for manufacturing integrated magnetic components and LED power supply

Номер патента: US09978499B2. Автор: Jinxiang Shen,Ningning Wang. Владелец: Zhejiang Shenghui Lighting Co Ltd. Дата публикации: 2018-05-22.

Electron microscopic observation method for observing biological sample in shape as it is, and composition for evaporation suppression under vacuum, scanning electron microscope, and transmission electron microscope used in the method

Номер патента: US09557253B2. Автор: Hiroshi Suzuki,Masatsugu Shimomura,Takahiko Hariyama,Yasuharu Takaku,Daisuke Ishii,Isao Ohta,Yoshinori Muranaka. Владелец: JAPAN SCIENCE AND TECHNOLOGY AGENCY. Дата публикации: 2017-01-31.

Apparatus and method for nanoscale x-ray imaging

Номер патента: US20210151288A1. Автор: Akintunde I. Akinwande,Rajiv Gupta,Richard C. Lanza,George Barbastathis,Berthold Klaus Paul Horn. Владелец: Massachusetts Institute of Technology. Дата публикации: 2021-05-20.

High speed thin film two terminal resistive memory

Номер патента: US20190214081A1. Автор: Ning Li,Devendra Sadana. Владелец: International Business Machines Corp. Дата публикации: 2019-07-11.

Molecular metal-based single crystalline thin film, component having same, and method for manufacturing single crystalline thin film

Номер патента: EP4431514A1. Автор: YUKA Kobayashi,Yoshihiko Takeda,Megumi Takahashi,Kazuto Hirata,Rui Song,Naoko Nishio,Rodrigo SATO. Владелец: NATIONAL INSTITUTE FOR MATERIALS SCIENCE. Дата публикации: 2024-09-18.

Thin films having large temperature coefficient of resistance and methods of fabricating same

Номер патента: US09664572B2. Автор: WEI Tian,Eric Walter Singleton,Declan Macken,Venkateswara Rao Inturi,Huaqing Yin. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2017-05-30.

Thin film structure including metal seed layer and method of forming oxide thin film on transparent conductive substrate by using the metal seed layer

Номер патента: US09595361B2. Автор: Jae-ho Lee,Hyeon-jin SHIN,Seong-Jun Park,Seong-Jun JEONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-03-14.

METHOD FOR PRODUCING A SUPERCONDUCTING MATERIAL AS A THIN FILM, A SUPERCONDUCTING DEVICE AND A SUPERCONDUCTING MATERIAL AS A THIN FILM

Номер патента: RU2008137079A. Автор: Судзи ХАХАКУРА,Казуя ОХМАЦУ,Мунецугу ЮЯМА,Кацуя ХАСЕГАВА,Судзи ХАХАКУРА (JP),Мунецугу ЮЯМА (JP),Казуя ОХМАЦУ (JP),Кацуя ХАСЕГАВА (JP). Владелец: Сумитомо Электрик Индастриз, Лтд. (Jp). Дата публикации: 2010-03-27.

Solid-state electrolytic capacitor with improved metallic anode and method for manufacturing the same

Номер патента: US20160118195A1. Автор: Chi-Hao Chiu,Ming-Tsung Chen,Chai-Ching Sung. Владелец: Apaq Technology Co Ltd. Дата публикации: 2016-04-28.

Solid-state electrolytic capacitor with improved metallic anode and method for manufacturing the same

Номер патента: US09754729B2. Автор: Chi-Hao Chiu,Ming-Tsung Chen,Chai-Ching Sung. Владелец: Apaq Technology Co Ltd. Дата публикации: 2017-09-05.

Thin film capacitor

Номер патента: US09564270B2. Автор: Yoshihiko Yano,Junji Aotani,Yasunobu Oikawa. Владелец: TDK Corp. Дата публикации: 2017-02-07.

Method for forming thin film conductors on a substrate

Номер патента: EP2926367A1. Автор: Andrew E. Edd,Charles C. Munson. Владелец: NCC Nano LLC. Дата публикации: 2015-10-07.

Apparatus and method for charging battery using a thin film printed solar cell

Номер патента: US8354819B2. Автор: Byeng-Sang Jung. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2013-01-15.

Method for shielding and grounding a connector assembly from electromagnetic interference (emi) using conductive seal and conductive housing

Номер патента: US20200274297A1. Автор: David Demaratos. Владелец: JST Corp. Дата публикации: 2020-08-27.

System and method for detecting abnormality of thin-film deposition process

Номер патента: US11965237B2. Автор: Yen-Yu Chen,Wen-hao Cheng,Hsuan-Chih Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-23.

Device and method for forming skyrmion

Номер патента: US11810701B2. Автор: Chang Soo Kim,Seung Mo Yang,Chan Yong Hwang,Kyoung Woong Moon. Владелец: Korea Research Institute of Standards and Science KRISS. Дата публикации: 2023-11-07.

Device and method for forming skyrmion

Номер патента: US20220246340A1. Автор: Chang Soo Kim,Seung Mo Yang,Chan Yong Hwang,Kyoung Woong Moon. Владелец: Korea Research Institute of Standards and Science KRISS. Дата публикации: 2022-08-04.

Ni-Fe alloy sputtering target for forming magnetic thin films, magnetic thin film, and method of manufacturing the Ni-Fe alloy sputtering target

Номер патента: US20010032686A1. Автор: Tsuneo Suzuki,Yuichiro Shindo. Владелец: Individual. Дата публикации: 2001-10-25.

Process for production of magnetic thin film, magnetic thin film, and magnetic material

Номер патента: US09886978B2. Автор: Kazuyuki Takami,Shin-ichi Ohkoshi,Asuka Namai,Koutaro Tomita. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2018-02-06.

Broad band, thin film attenuator and method for construction thereof

Номер патента: CA1240372A. Автор: Leonard A. Roland,H. Erwin Grellmann,Larry R. Lockwood. Владелец: Tektronix Inc. Дата публикации: 1988-08-09.

Ceramic carrier and sensor element, heating element and sensor module, each with a ceramic carrier and method for manufacturing a ceramic carrier

Номер патента: US20170110225A1. Автор: Thomas Loose,Stefan Dietmann,Dieter Teusch,Alfred Fleckenstein. Владелец: HERAEUS SENSOR TECHNOLOGY GMBH. Дата публикации: 2017-04-20.

Miniaturized electronics package with patterned thin film solid state battery

Номер патента: US11539081B2. Автор: John U. Knickerbocker,Bing Dang,Qianwen Chen. Владелец: International Business Machines Corp. Дата публикации: 2022-12-27.

Miniaturized electronics package with patterned thin film solid state battery

Номер патента: US10651507B2. Автор: John U. Knickerbocker,Bing Dang,Qianwen Chen. Владелец: International Business Machines Corp. Дата публикации: 2020-05-12.

Multi-cell monolithic thin-film battery and fabrication method thereof

Номер патента: WO2023247206A1. Автор: André Müller,Moritz Futscher,Luc Brinkman,Abdessalem ARIBIA,Yaroslav ROMANYUK. Владелец: EMPA EIDGENOSSISCHE MATERIALPRUFUNGS- UND FORSCHUNGSANSTALT. Дата публикации: 2023-12-28.

Miniaturized electronics package with patterned thin film solid state battery

Номер патента: US20180323472A1. Автор: John U. Knickerbocker,Bing Dang,Qianwen Chen. Владелец: International Business Machines Corp. Дата публикации: 2018-11-08.

Miniaturized electronics package with patterned thin film solid state battery

Номер патента: US20200194841A1. Автор: John U. Knickerbocker,Bing Dang,Qianwen Chen. Владелец: International Business Machines Corp. Дата публикации: 2020-06-18.

Miniaturized electronics package with patterned thin film solid state battery

Номер патента: US20200185781A1. Автор: John U. Knickerbocker,Bing Dang,Qianwen Chen. Владелец: International Business Machines Corp. Дата публикации: 2020-06-11.

Miniaturized electronics package with patterned thin film solid state battery

Номер патента: US20180323473A1. Автор: John U. Knickerbocker,Bing Dang,Qianwen Chen. Владелец: International Business Machines Corp. Дата публикации: 2018-11-08.

Single-step synthesis of nanostructured thin films by a chemical vapor and aerosol deposition process

Номер патента: US20160056448A1. Автор: Pratim Biswas,Tandeep Singh Chadha,Woo-Jin An. Владелец: Washington University in St Louis WUSTL. Дата публикации: 2016-02-25.

A cladding-less gan-based thin-film edge-emitting laser

Номер патента: WO2024114692A1. Автор: Hoi Wai Choi,Wai Yuen FU. Владелец: The University of Hong Kong. Дата публикации: 2024-06-06.

Thin film capacitor with intermediate electrodes

Номер патента: US09824821B2. Автор: Masaru Kurosawa. Владелец: TAIYO YUDEN CO LTD. Дата публикации: 2017-11-21.

Thin films having large temperature coefficient of resistance and methods of fabricating same

Номер патента: EP2738777A3. Автор: WEI Tian,Eric Walter Singleton,Declan Macken,Venkateswara Rao Inturi,Huaqing Yin. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2014-09-10.

METHOD FOR SHIELDING AND GROUNDING A CONNECTOR ASSEMBLY FROM ELECTROMAGNETIC INTERFERENCE (EMI) USING CONDUCTIVE SEAL AND CONDUCTIVE HOUSING

Номер патента: US20200274297A1. Автор: DEMARATOS David. Владелец: J.S.T. Corporation. Дата публикации: 2020-08-27.

PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME

Номер патента: US20140295197A1. Автор: Sakurai Hideaki,Soyama Nobuyuki,Doi Toshihiro. Владелец: MITSUBISHI MATERIALS CORPORATION. Дата публикации: 2014-10-02.

Method of forming thin film of inorganic solid electrolyte

Номер патента: US20020106456A1. Автор: Hirokazu Kugai,Nobuhiro Ota. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2002-08-08.

Method for preparing high-performance all-solid-state thin-film lithium battery by radio frequency magnetron sputtering method

Номер патента: CN111276749B. Автор: 李硕,魏峰,杜军,梁晓平,谭飞虎. Владелец: GRIMN Engineering Technology Research Institute Co Ltd. Дата публикации: 2021-01-26.

Precursor structure of perpendicular magnetization film, perpendicular magnetization film structure and method for manufacturing same, perpendicular magnetization-type tunnel magnetoresistance junction film using those and method for manufacturing same, and perpendicular magnetization-type tunnel magnetoresistance junction element using those

Номер патента: EP3683851A4. Автор: Seiji Mitani,Hiroaki Sukegawa,Thomas SCHEIKE. Владелец: NATIONAL INSTITUTE FOR MATERIALS SCIENCE. Дата публикации: 2021-06-02.

Precursor structure of perpendicular magnetization film, perpendicular magnetization film structure and method for manufacturing same, perpendicular magnetization-type tunnel magnetoresistance junction film using those and method for manufacturing same, and perpendicular magnetization-type tunnel magnetoresistance junction element using those

Номер патента: EP3683851A1. Автор: Seiji Mitani,Hiroaki Sukegawa,Thomas SCHEIKE. Владелец: NATIONAL INSTITUTE FOR MATERIALS SCIENCE. Дата публикации: 2020-07-22.

Negative electrode material Si-Sb alloy thin film for sodium-ion battery and preparation method of negative electrode material Si-Sb alloy thin film

Номер патента: CN105680028A. Автор: 潘洋,周永宁. Владелец: FUDAN UNIVERSITY. Дата публикации: 2016-06-15.

Method for manufacturing electrode for secondary battery and method for manufacturing secondary battery

Номер патента: US20190165368A1. Автор: Noboru Yoshida,Makihiro Otohata. Владелец: NEC Corp. Дата публикации: 2019-05-30.

Thin-film batteries with polymer and LiPON electrolyte layers and method

Номер патента: US7776478B2. Автор: Jody J. Klaassen. Владелец: Integrated Power Solutions Inc. Дата публикации: 2010-08-17.

Thin-film batteries with soft and hard electrolyte layers and method

Номер патента: US7931989B2. Автор: Jody J. Klaassen. Владелец: Integrated Power Solutions Inc. Дата публикации: 2011-04-26.

Thin-film batteries with soft and hard electrolyte layers and method

Номер патента: US20070015060A1. Автор: Jody Klaassen. Владелец: Integrated Power Solutions Inc. Дата публикации: 2007-01-18.

Thin-film batteries with polymer and lipon electrolyte layers and methods

Номер патента: CA2615479A1. Автор: Jody J. Klaassen. Владелец: Jody J. Klaassen. Дата публикации: 2007-01-25.

Production method for all-solid-state battery

Номер патента: AU2018352671B2. Автор: Tomohiro Ito,Masahiro Yanagida,Takashi Mukai,Keita Noguchi,Masahiro Shimada,Naoto Yamashita,Genki Nogami,Aki KATORI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2023-11-02.

Production method for all-solid-state battery

Номер патента: US11961971B2. Автор: Tomohiro Ito,Masahiro Yanagida,Takashi Mukai,Keita Noguchi,Masahiro Shimada,Naoto Yamashita,Genki Nogami,Aki KATORI. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2024-04-16.

Method for producing plasma display panel

Номер патента: US20100248576A1. Автор: Kazuto Fukuda,Motoi Hatanaka,Michiru Kuromiya. Владелец: Panasonic Corp. Дата публикации: 2010-09-30.

Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene process

Номер патента: US20240260275A1. Автор: Usha Raghuram,Jie Zhou,Kavita Shah,Eli Harari,Shohei KAMISAKA,Yosuke Nosho,Iting Lin. Владелец: Sunrise Memory Corp. Дата публикации: 2024-08-01.

Superconducting thin film formed of oxide superconductor material, superconducting current path and superconducting device utilizing the superconducting thin film

Номер патента: CA2079357A1. Автор: Hiroshi Inada,Michitomo Iiyama. Владелец: Individual. Дата публикации: 1993-03-25.

Method for forming an electrical connection in a thin film actuated mirror

Номер патента: US5834163A. Автор: Yong-Ki Min,Min-Sik Um. Владелец: Daewoo Electronics Co Ltd. Дата публикации: 1998-11-10.

Method for manufacturing superconducting thin film formed of oxide superconductor having non superconducting region in it, method for manufacturing superconducting device utilizing the superconducting thin film and superconducting thin film manufactured thereby

Номер патента: CA2077047C. Автор: Michitomo Iiyama,So Tanaka. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1998-02-10.

Method for preparing layered structure including oxide superconductor thin film

Номер патента: CA2212473C. Автор: Takao Nakamura,Michitomo Iiyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2001-12-11.

Superconducting thin film formed of oxide superconductor material, superconducting current path and superconducting device utilizing the superconducting thin film

Номер патента: CA2079357C. Автор: Hiroshi Inada,Michitomo Iiyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1996-04-16.

Piezoelectric single-crystal element, mems device using same, and method for manufacturing same

Номер патента: US20230120240A1. Автор: Sang Goo Lee. Владелец: Ibule Photonics Co Ltd. Дата публикации: 2023-04-20.

FEMTOSECOND LASER BASED METHOD FOR FABRICATION OF MICRO- AND NANO-CONSTRICTION TYPE STRUCTURES ON A YBA2-CU3O7-xSUPERCONDUCTING THIN FILM

Номер патента: EP3485507A1. Автор: Vijaya Srinivasu VALLABHAPURAPU,Patrice UMENNE. Владелец: Unisa. Дата публикации: 2019-05-22.

Method for integrating and erecting carbon nanotube column

Номер патента: US20120115367A1. Автор: Yen-Chih Chang,Chih-Pi Cheng. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2012-05-10.

Piezoelectric thin film element, manufacturing method thereof, and liquid ejecting head and liquid ejecting apparatus employing same

Номер патента: US20040090500A1. Автор: Masami Murai. Владелец: Seiko Epson Corp. Дата публикации: 2004-05-13.

Method of manufacturing a piezoelectric thin film element

Номер патента: US7089636B2. Автор: Masami Murai. Владелец: Seiko Epson Corp. Дата публикации: 2006-08-15.

Thin film stack

Номер патента: EP2850667A1. Автор: Peter Mardilovich,Christopher Shelton,James Elmer ABBOTT, Jr,Stephen F. BYLUND. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2015-03-25.

Piezoelectric mechanism having electrodes within thin film sheet that are substantially perpendicular to substrate

Номер патента: EP2589092A1. Автор: Peter Mardilovich,Tony S. Cruz-Uribe. Владелец: Hewlett Packard Development Co LP. Дата публикации: 2013-05-08.

Method for manufacturing large-area metal chalcogenide thin film, and method for manufacturing electronic device comprising metal chalcogenide thin film manufactured thereby

Номер патента: WO2018143611A1. Автор: 정운룡,양희승,기리아누팜. Владелец: 포항공과대학교 산학협력단. Дата публикации: 2018-08-09.

Composition for ferroelectric thin film formation, ferroelectric thin film and liquid-jet head

Номер патента: US7544240B2. Автор: Hiroyuki Kamei. Владелец: Seiko Epson Corp. Дата публикации: 2009-06-09.

Composition for ferroelectric thin film formation, ferroelectric thin film and liquid-jet head

Номер патента: US20100203236A1. Автор: Hiroyuki Kamei. Владелец: Seiko Epson Corp. Дата публикации: 2010-08-12.

Composition for ferroelectric thin film formation, ferroelectric thin film and liquid-jet head

Номер патента: US20090009563A1. Автор: Hiroyuki Kamei. Владелец: Seiko Epson Corp. Дата публикации: 2009-01-08.

Method for Hydrophobic Surface Modification of Zinc Aluminate Thin Film

Номер патента: KR102193650B1. Автор: 윤순길,서상영. Владелец: 충남대학교산학협력단. Дата публикации: 2020-12-21.

Vision assistance device having conductive transparent thin film

Номер патента: US20110069274A1. Автор: Chang-Soo Han,Joon-Dong Kim,Jin-Won Song. Владелец: Korea Institute of Machinery and Materials KIMM. Дата публикации: 2011-03-24.

SCREEN PROTECTING FILM INCLUDING COLORED ADHESIVE SURFACE PROTECTING LAYER AND PERFORATED LINE AND METHOD FOR ATTACHING THE SCREEN PROTECTING FILM USING THE ADHESIVE SURFACE PROTECTING LAYER AND THE PERFORATED LINE

Номер патента: US20160288406A1. Автор: KANG MI AE. Владелец: . Дата публикации: 2016-10-06.

Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor

Номер патента: US20070090349A1. Автор: Jin-Seong Park,Min-chul Suh,Taek Ahn. Владелец: Samsung SDI Co Ltd. Дата публикации: 2007-04-26.

Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor

Номер патента: US20060108581A1. Автор: Jin-Seong Park,Min-chul Suh,Jae-Bon Koo,Taek Ahn. Владелец: Samsung SDI Co Ltd. Дата публикации: 2006-05-25.

Thin film electrode ceramic substrate and method for manufacturing the same

Номер патента: US20130032383A1. Автор: Yun Hwi Park,Won Hee Yoo,Byeung Gyu Chang,Taek Jung Lee. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2013-02-07.

Organic Electro-Luminescence Display Panel and Method for Fabricating Same

Номер патента: US20130048954A1. Автор: Seung-Hwan Lee. Владелец: LG Display Co Ltd. Дата публикации: 2013-02-28.

Display panel, method for manufacturing the same and display device

Номер патента: US12029097B2. Автор: Qian Jin,Zhongyuan Sun,Jingkai Ni,Kai SUI. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-07-02.

Thin film heater and camera lens having the same

Номер патента: US20210195697A1. Автор: Kai-Ming Chang,Yu-Ching Lin,Hsiao-Fen Wei,Li-Wei YAO,Yi-Rong LIN,Yen-Shu LEE. Владелец: Industrial Technology Research Institute ITRI. Дата публикации: 2021-06-24.

Fluorine-containing compound and method for producing same, fluorine-containing polymer, organic thin film, and organic thin film device

Номер патента: US20090240014A1. Автор: Yutaka Ie,Yoshio Aso,Masato Ueda,Masashi Nitani. Владелец: Sumitomo Chemical Co Ltd. Дата публикации: 2009-09-24.

Method for manufacturing semiconductor structure and semiconductor structure

Номер патента: US11871560B2. Автор: Yang Chen,Mingxia Cheng. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-09.

Method for manufacturing nonvolatile storage device and nonvolatile storage device

Номер патента: US20130062590A1. Автор: Nobuaki Yasutake,Takeshi SONEHARA. Владелец: Toshiba Corp. Дата публикации: 2013-03-14.

Perovskite thin film solar cell and preparation method therefor

Номер патента: EP4294151A1. Автор: Likun Yin,Shufang Zhang,Zhengyan HE,Yunyi Wu,Quanming GENG. Владелец: China Three Gorges Corp. Дата публикации: 2023-12-20.

Thin film actuated mirror array

Номер патента: US5636070A. Автор: Dong-Kuk Kim,Jeong-Beom Ji. Владелец: Daewoo Electronics Co Ltd. Дата публикации: 1997-06-03.

Method for forming organic thin film

Номер патента: EP1512768A1. Автор: Katsunori Sony Corporation Yanashima,Hironobu Sony Corporation NARUI,Akihiko Sony Corporation MEMEZAWA,Koji Sony Corporation SASAKI. Владелец: Sony Corp. Дата публикации: 2005-03-09.

Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same

Номер патента: US5717222A. Автор: Hiroshi Inada,Takao Nakamura,Michitomo Iiyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1998-02-10.

OLED display device including touch sensors and method for manufacturing same

Номер патента: US11877492B2. Автор: WENXU Xianyu,Wenliang GONG. Владелец: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd. Дата публикации: 2024-01-16.

Thin film transistor gate voltage supply circuit

Номер патента: US09960761B2. Автор: Dan Cao. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-05-01.

Method for manufacturing superconducting thin film formed of oxide superconductor having non superconducting region in it, method for manufacturing superconducting device utilizing the superconducting thin film and superconducting thin film manufactured thereby

Номер патента: CA2077047A1. Автор: Michitomo Iiyama,So Tanaka. Владелец: So Tanaka. Дата публикации: 1993-03-01.

Thin-film thermo-electric generator and fabrication method thereof

Номер патента: US20110197942A1. Автор: Ping Fan,Dongping Zhang,Guangxing Liang,Zhuangghao Zjemg. Владелец: SHENZHEN UNIVERSITY. Дата публикации: 2011-08-18.

Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus

Номер патента: US20020145488A1. Автор: Setsuya Iwashita,Hiromu Miyazawa,Takamitsu Higuchi. Владелец: Seiko Epson Corp. Дата публикации: 2002-10-10.

Method of Fabricating Thin Film by Microplasma Processing and Apparatus for Same

Номер патента: US20120021132A1. Автор: Takeshi Sasaki,Yoshiki Shimizu,Naoto Koshizaki,Kazuhiro Kirihara,Davide Mariotti,Kazuo Terashima. Владелец: National Institute of Advanced Industrial Science and Technology AIST. Дата публикации: 2012-01-26.

Dual-sensor detection of reflectance signals for thin-film based assays

Номер патента: CA3164448A1. Автор: Jian Zheng,QI Sun,Stephen DAGGETT. Владелец: Ortho Clinical Diagnostics Inc. Дата публикации: 2021-06-24.

Dual-sensor detection of reflectance signals for thin-film based assays

Номер патента: US11867634B2. Автор: Jian Zheng,QI Sun,Stephen DAGGETT. Владелец: Ortho Clinical Diagnostics Inc. Дата публикации: 2024-01-09.

Method for applying a thin-film encapsulation layer assembly to an organic device, and an organic device provided with a thin-film encapsulation layer assembly preferably applied with such a method

Номер патента: EP2158626A1. Автор: Ruediger Lange,Bas Jan Emile Van Rens,Yvo Hendrik Croonen. Владелец: Otb Solar Bv. Дата публикации: 2010-03-03.

Method for applying a thin-film encapsulation layer assembly to an organic device, and an organic device provided with a thin-film encapsulation layer assembly preferably applied with such a method

Номер патента: WO2008140313A1. Автор: Ruediger Lange,Bas Jan Emile Van Rens,Yvo Hendrik Croonen. Владелец: OTB Group B.V.. Дата публикации: 2008-11-20.

Thin film transistor and filter using thin film transistor

Номер патента: US11968845B2. Автор: Yang Wei,Shou-Shan Fan,Yue-Gang Zhang,Gao-Tian Lu. Владелец: Hon Hai Precision Industry Co Ltd. Дата публикации: 2024-04-23.

Hydrogen sensor utilizing rare earth metal thin film detection element

Номер патента: US6006582A. Автор: Thomas H. Baum,Gautam Bhandari. Владелец: Advanced Technology Materials Inc. Дата публикации: 1999-12-28.

Thin film of oxide superconductor possessing locally different crystal orientations and processes for preparing the same

Номер патента: CA2062294A1. Автор: Hiroshi Inada,Michitomo Iiyama. Владелец: Individual. Дата публикации: 1992-09-05.

Thin film of oxide superconductor possessing locally different crystal orientations and processes for preparing the same

Номер патента: CA2062294C. Автор: Hiroshi Inada,Michitomo Iiyama. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1997-01-14.

Piezoelectric thin-film element

Номер патента: US20070278904A1. Автор: Kenji Shibata,Fumihito Oka. Владелец: Individual. Дата публикации: 2007-12-06.

Method for calculating area change rate of polysilicon thin film having hemispherical grains, method for calculating capacitance, and apparatus for monitoring area change rate

Номер патента: JP3154697B2. Автор: 相 浩 禹,承 祐 申,一 根 韓,動 静 呉,洪 善 梁. Владелец: Hynix Semiconductor Inc. Дата публикации: 2001-04-09.

Organic insulating layer composition, method for forming organic insulating layrer, and organic thin film transistor including the organic insulating layer

Номер патента: KR102073763B1. Автор: 노용영,백강준,조준혁. Владелец: 한밭대학교 산학협력단. Дата публикации: 2020-02-06.

Method for utilizing photo-crosslinking polymers to conduct thin film packaging on organic electronic device

Номер патента: CN103579503A. Автор: 陈平,王潇,杨丹,杨永强,段羽. Владелец: Jilin University. Дата публикации: 2014-02-12.

Optical-energy crosslinkable organic thin film transistor insulation layer material, overcoat insulation layer and organic thin film transistor

Номер патента: TW201213345A. Автор: Isao Yahagi. Владелец: Sumitomo Chemical Co. Дата публикации: 2012-04-01.

Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby

Номер патента: EP0732756A2. Автор: Hiroshi Inada,Michitomo Iiyama,So Tanaka. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1996-09-18.

Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells

Номер патента: TWI373148B. Автор: YU HUANG,Bing Joe Hwang,Hsuan Fu Wang,Chih Chung Wu,Shih Hong Chang. Владелец: Ind Tech Res Inst. Дата публикации: 2012-09-21.

Method for preparing preferred-orientation bismuth telluride thermoelectric thin film

Номер патента: CN106399937A. Автор: 张贺,丁发柱,古宏伟,屈飞,董泽斌,商红静,张慧亮. Владелец: Institute of Electrical Engineering of CAS. Дата публикации: 2017-02-15.

Organic thin film patterning method, organic thin film transistor using the same, manufacturing method thereof, and flat panel display provided with organic thin film transistor

Номер патента: JP4503544B2. Автор: 在本 具,▲ミン▼徹 徐. Владелец: Samsung Mobile Display Co Ltd. Дата публикации: 2010-07-14.

Composition for surface modification of insulator, method for surface modification of insulator, insulator, and thin film transistor

Номер патента: KR102259939B1. Автор: 이은경,정지영,최아정. Владелец: 삼성전자주식회사. Дата публикации: 2021-06-02.

Method for regulating and controlling stress of perovskite thin film by using chemical cross-linking agent and perovskite solar cell

Номер патента: CN113285031A. Автор: 李刚,张恒恺. Владелец: Shenzhen Research Institute HKPU. Дата публикации: 2021-08-20.

Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby

Номер патента: EP0546958A3. Автор: Hiroshi Inada,Michitomo Iiyama,So Tanaka. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1993-07-14.

Method for vapor-phase growth of an oxide thin film

Номер патента: EP0387456B1. Автор: Kazuhiro c/o K.K. Toshiba Eguchi,Takatosi c/o K.K. Toshiba Nakanisi,Rie c/o K.K. Toshiba Satoh. Владелец: Toshiba Corp. Дата публикации: 1993-09-22.

Devices from and method for producing crystallographic boundary junctions in superconducting thin films

Номер патента: WO1992015406A1. Автор: Timothy Walton James,Julia Sophia Fleming. Владелец: SUPERCONDUCTOR TECHNOLOGIES, INC.. Дата публикации: 1992-09-17.

Method for growing zns:mn phosphor layer for thin film electro-luminescence element

Номер патента: JPH10162957A. Автор: Gitte Haerkoenen,Erkki Lauri Soininen,Marja Lahonen,Juha Viljanen,Runar Toernqvist,ラウリ ソイニネン エルッキ,ヘルキョネン ギッテ,ラホネン マルヤ,トョルンクヴィスト ルナール,ヴィルヤネン ユハ. Владелец: Planar International Oy. Дата публикации: 1998-06-19.

Low-loss and wide-band acoustic delay lines using x-cut and y-cut lithium niobate piezoelectric thin films

Номер патента: US11942920B2. Автор: Ruochen Lu,Tomas Manzaneque Garcia,Yansong Yang,Songbin Gong. Владелец: University of Illinois. Дата публикации: 2024-03-26.

Organic thin film transistor, method of manufacturing the same and flat panel display device with the organic thin film transistor

Номер патента: KR100667935B1. Автор: 서민철,구재본,안택. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2007-01-11.

Si/Sb superlattice phase-change thin-film material for phase-change memory and preparation method of Si/Sb superlattice phase-change thin-film material

Номер патента: CN105489758A. Автор: 郑龙,袁丽,吴卫华,邹华,胡益丰,朱小芹,吴世臣,眭永兴,张建豪. Владелец: Jiangsu University of Technology. Дата публикации: 2016-04-13.

Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor

Номер патента: KR100719546B1. Автор: 김성진,서민철,구재본. Владелец: 삼성에스디아이 주식회사. Дата публикации: 2007-05-17.

Method for producing wiring substrate

Номер патента: US20210392753A1. Автор: Hiroshi Yanagimoto,Kazuaki Okamoto,Keiji Kuroda,Haruki KONDOH,Rentaro Mori. Владелец: Toyota Motor Corp. Дата публикации: 2021-12-16.

Method for patterning quantum dot layer

Номер патента: US20230403923A1. Автор: Xiaoyuan Zhang. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2023-12-14.

Display panel, display device and method for configuring display panel

Номер патента: US20200068727A1. Автор: Jiang Chen,Jianji ZHANG. Владелец: Wuhan Tianma Microelectronics Co Ltd. Дата публикации: 2020-02-27.

Optical lens structure, method for manufacturing the same, and display apparatus

Номер патента: US11860382B2. Автор: MING Yang,Han Yue,MINGHUA XUAN,CAN Wang,Xiaochuan Chen,Ning Cong,Can Zhang,Angran ZHANG,Jiao Zhao. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2024-01-02.

Method for producing multilayer wiring substrate and multilayer wiring substrate

Номер патента: US20110247865A1. Автор: Mitsuyuki Tsurumi. Владелец: Fujifilm Corp. Дата публикации: 2011-10-13.

Circuit board and method for manufacturing the same

Номер патента: US20220225510A1. Автор: Ming-Jaan Ho,Fu-Yun Shen,Xian-qin HU,Hsiao-Ting Hsu,Qian-Nan Zhou. Владелец: Qing Ding Precision Electronics Huaian Co Ltd. Дата публикации: 2022-07-14.

Sputtering target of multi-component single body and method for preparation thereof, and method for producing multi-component alloy-based nanostructured thin films using same

Номер патента: US20160068943A1. Автор: JU Hyun Sun,Chang Hun Lee,Seung Yong Shin,Jung Chan Bae,Kyoung Il Moon. Владелец: Korea Institute of Industrial Technology KITECH. Дата публикации: 2016-03-10.

Method for Manufacturing Strain Sensor by Control of Thin-Film Crack Using Stress Concentration Structure and Strain Sensor Manufactured Using Same

Номер патента: US20240142217A1. Автор: Yongtaek Hong,Taehoon Kim,Daesik Kim. Владелец: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION. Дата публикации: 2024-05-02.

Method for producing inorganic substance powder highly-oriented thin film sheet

Номер патента: US09492964B2. Автор: Yuichiro Sumi,Naoyuki Kawamata. Владелец: TBM Co Ltd. Дата публикации: 2016-11-15.

Method for purifying waste water with open-flame, thin film evaporation

Номер патента: US20210387867A1. Автор: Shawn M. LOLLING,Jonathan C. WARNER. Владелец: Abtech Industries Inc. Дата публикации: 2021-12-16.

Method for making a product of the type comprising a laminar supporting element and an upgrading layer and corresponding production system

Номер патента: EP3589489A1. Автор: Giacomino Adolfo Agosti. Владелец: Individual. Дата публикации: 2020-01-08.

Thin-film composite membranes having improved adhesion between layers and uses thereof

Номер патента: US20240299887A1. Автор: Robert D. Lousenberg,Sudipto Majumdar,Ning Shangguan,Irene GONCHAROVSKY,Kenneth E. LOPRETE,Jacob A. WARGO. Владелец: Compact Membrane Systems Inc. Дата публикации: 2024-09-12.

Method for manufacturing optical member having water-repellent thin film

Номер патента: EP1255129A3. Автор: Shigetoshi Kono. Владелец: Hoya Corp. Дата публикации: 2004-04-14.

Method for fabrication of high vertical aspect ratio thin film structures

Номер патента: US5660680A. Автор: Christopher G. Keller. Владелец: UNIVERSITY OF CALIFORNIA. Дата публикации: 1997-08-26.

Method for purifying waste water with open-flame, thin film evaporation

Номер патента: CA3181082A1. Автор: Shawn M. LOLLING,Jonathan C. WARNER. Владелец: Abtech Industries Inc. Дата публикации: 2021-01-28.

Thin-film composite membranes having improved adhesion between layers and uses thereof

Номер патента: AU2022311871A1. Автор: Robert D. Lousenberg,Sudipto Majumdar,Ning Shangguan,Irene GONCHAROVSKY,Kenneth E. LOPRETE,Jacob A. WARGO. Владелец: Compact Membrane Systems Inc. Дата публикации: 2024-01-25.

Thin-film composite membranes having improved adhesion between layers and uses thereof

Номер патента: CA3224956A1. Автор: Robert D. Lousenberg,Sudipto Majumdar,Ning Shangguan,Irene GONCHAROVSKY,Kenneth E. LOPRETE,Jacob A. WARGO. Владелец: Compact Membrane Systems Inc. Дата публикации: 2023-01-19.

Thin-film composite membranes having improved adhesion between layers and uses thereof

Номер патента: EP4370238A1. Автор: Robert D. Lousenberg,Sudipto Majumdar,Ning Shangguan,Irene GONCHAROVSKY,Kenneth E. LOPRETE,Jacob A. WARGO. Владелец: Compact Membrane Systems Inc. Дата публикации: 2024-05-22.

Method for manufacturing a cushion which is at least composed of a body, an intermediate foam layer and an upholstery layer

Номер патента: WO1992008601A1. Автор: Lucien Jourquin,Eric Cornelis,Bernard Debaes,Renaat Van Haute. Владелец: RECTICEL. Дата публикации: 1992-05-29.

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

Номер патента: US09586979B2. Автор: Sang Ick Lee,JANG Hyeon Seok,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Sung Gi Kim,Byeong-Il Yang. Владелец: DNF Co Ltd. Дата публикации: 2017-03-07.

Method for manufacturing functional mixture-coated skin attachment thin film and skin-attachment thin film manufactured by using same

Номер патента: EP4374908A1. Автор: Ki Don Kim,Jun-Ho Jeong,Soon-Hyoung Hwang,Sohee JEON,Hyeok Jung Kang. Владелец: Crscube America Inc. Дата публикации: 2024-05-29.

Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition

Номер патента: US20020192373A1. Автор: Ok-Hyun Nam,Cheol-soo Sone,Hyeong-soo Park. Владелец: Samsung Electro Mechanics Co Ltd. Дата публикации: 2002-12-19.

Driver for driving display panel and method for reading / writing in memory thereof and thin film transistor liquid crystal display using the same

Номер патента: US20080170050A1. Автор: Heng-Sheng Chou,Chun-Hung Huang,Ying-Chi Wang. Владелец: AU OPTRONICS CORP. Дата публикации: 2008-07-17.

Method for the production of highly pure copper thin films by chemical vapor deposition

Номер патента: US5441766A. Автор: Hyung S. Choi,Young S. Cho,Chong J. Lim,Soon T. Hwang. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 1995-08-15.

Thin film sampling method for film composition quantitative analysis

Номер патента: US5248614A. Автор: Wonder D. Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 1993-09-28.

System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness

Номер патента: US6031615A. Автор: Steven W. Meeks,Rusmin Kudinar,Ronny Soetarman. Владелец: Candela Instruments Inc. Дата публикации: 2000-02-29.

Apparatus and method for the determination of grain size in thin films

Номер патента: US6038026A. Автор: Humphrey J Maris. Владелец: Brown University Research Foundation Inc. Дата публикации: 2000-03-14.

Methods for marketing and generating revenue from edible thin films

Номер патента: WO2004045306A2. Автор: David B. Kroll,Steven P. Barton,Donna M. Dikselis. Владелец: WM. WRIGLEY JR. COMPANY. Дата публикации: 2004-06-03.

Protective film module and method for manufacturing the same

Номер патента: US20240109272A1. Автор: Jiyoung WANG,Kitaek Kim,Junghoon Oh. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-04-04.

Method for application of coating onto razors by atomic layered sedimentation method

Номер патента: RU2526347C2. Автор: Джон МАДЕЙРА,Невилль СОННЕНБЕРГ. Владелец: Дзе Жиллетт Компани. Дата публикации: 2014-08-20.

Method for fabricating neutron supermirror using neutron monochromator structures

Номер патента: US20080115338A1. Автор: Chang-Hee Lee,Sang-Jin Cho,Hark-Rho Kim,Ji-Yong So. Владелец: Korea Atomic Energy Research Institute KAERI. Дата публикации: 2008-05-22.

Method for fabricating neutron supermirror using neutron monochromator structures

Номер патента: US7635839B2. Автор: Chang-Hee Lee,Sang-Jin Cho,Hark-Rho Kim,Ji-Yong So. Владелец: Korea Atomic Energy Research Institute KAERI. Дата публикации: 2009-12-22.

Method for producing thin film having high refractive index and high transparency, and thin film produced by the method

Номер патента: US09845394B2. Автор: Koji Mitamura,Manabu Hirata,Kimihiro Matsukawa,Seiji WATASE. Владелец: Daihachi Chemical Industry Co Ltd. Дата публикации: 2017-12-19.

Thin film-planar structure and method for producing the same

Номер патента: US6406637B1. Автор: Akira Shimokohbe,Seiichi Hata. Владелец: Tokyo Institute of Technology NUC. Дата публикации: 2002-06-18.

Method for fabrication of a molecular filter and apparatus formed by the same

Номер патента: US20020173015A1. Автор: Axel Scherer. Владелец: California Institute of Technology CalTech. Дата публикации: 2002-11-21.

Method for fabrication of a molecular filter and apparatus formed by the same

Номер патента: WO2002092497A3. Автор: Axel Scherer. Владелец: Axel Scherer. Дата публикации: 2003-07-24.

Method for fabrication of a molecular filter and apparatus formed by the same

Номер патента: WO2002092497A2. Автор: Axel Scherer. Владелец: California Institute of Technology. Дата публикации: 2002-11-21.

Apparatus and methods for combinatorial material screening and discovery

Номер патента: CA3212014A1. Автор: Konrad WALUS,Anindya Lal Roy. Владелец: University of British Columbia. Дата публикации: 2022-09-09.

Carbon nanotube thin film/composite material forming method and manufactured lightning protection structure

Номер патента: EP4032691A1. Автор: Yanming Zu,Yanan Liu,Rongxin FENG,Limin Gao. Владелец: Beijing Aeronautical Science & Tech Research Institute Commercial Aircraft Corp Of China. Дата публикации: 2022-07-27.

Thin films covalently bonded to cellulose ester membranes and methods of making the same

Номер патента: US12048903B2. Автор: John Herron,Edward Gerard Beaudry. Владелец: Fluid Technology Solutions (fts) Inc. Дата публикации: 2024-07-30.

Method for producing sound insulation

Номер патента: US20240286397A1. Автор: Volkmar Schulze,Matthias DICKERT,Klaus Krömer. Владелец: ADLER PELZER HOLDING GMBH. Дата публикации: 2024-08-29.

Thin films covalently bonded to cellulose ester membranes and methods of making the same

Номер патента: EP3509731A1. Автор: John Herron,Edward Gerard Beaudry. Владелец: Fluid Technology Solutions (fts) Inc. Дата публикации: 2019-07-17.

Protective film module and method for manufacturing display device using the same

Номер патента: US20240103202A1. Автор: Kitaek Kim. Владелец: Samsung Display Co Ltd. Дата публикации: 2024-03-28.

Integrated additive manufacturing and laser processing systems and methods for ceramic, glass, and silicon carbide applications

Номер патента: US12053906B2. Автор: Fei Peng,Rajendra Bordia,Hua Huang,Hai Xiao,Jincheng LEI,Jianhua Tong,Kyle S. Brinkman,Shenglong Mu,Yuzhe Hong. Владелец: Clemson University Research Foundation (CURF). Дата публикации: 2024-08-06.

Device, system and method for acquiring force information based on bionic structure

Номер патента: US20220379490A1. Автор: HAO LI,Xiaoliang Xie,Yanjie ZHOU,Zengguang Hou,Shiqi Liu,Xiaohu ZHOU,Zhenqiu FENG,Meijiang GUI,Lingwu MENG. Владелец: Institute of Automation of Chinese Academy of Science. Дата публикации: 2022-12-01.

Process for preparing a polypropylene-based sponge-like porous thin film

Номер патента: US11883792B1. Автор: Junaid Saleem,Zubair Khalid Baig Moghal,Safdar Hossain S K,Gordan McKay. Владелец: King Faisal University SA. Дата публикации: 2024-01-30.

Laminated body, method for manufacturing laminated body, method for forming optical body, and camera module mounting device

Номер патента: EP3878643A1. Автор: Hiroshi Tazawa,Shunichi Kajiya,Hiroshi Sugata. Владелец: Dexerials Corp. Дата публикации: 2021-09-15.

Thin film getter structure having miniature heater and manufacturing method thereof

Номер патента: EP4074650A3. Автор: Tao Lu,Shinan Wang. Владелец: Shanghai Industrial Technology Research Institute. Дата публикации: 2022-10-26.

Methods for microscale laser shock processing of metal thin films

Номер патента: AU2003231787A1. Автор: Y. Lawrence Yao,Wenwu Zhang. Владелец: Columbia University in the City of New York. Дата публикации: 2003-12-02.

Method and apparatus for the continuous extrusion and blowing of thin films of plastic material in particular of rigid pvc

Номер патента: CA1119370A. Автор: Giancarlo Tramezzani. Владелец: Pwt Plastic World Technology Ltd. Дата публикации: 1982-03-09.

Microcellular thermoplastic thin films formed by a solid-state foaming process

Номер патента: US09381723B2. Автор: Henry G. Schirmer,Vipin Kumar,Dustin Miller,John Chunpo Lu. Владелец: UNIVERSITY OF WASHINGTON. Дата публикации: 2016-07-05.

SPUTTERING TARGET OF MULTI-COMPONENT SINGLE BODY AND METHOD FOR PREPARATION THEREOF, AND METHOD FOR PRODUCING MULTI-COMPONENT ALLOY-BASED NANOSTRUCTURED THIN FILMS USING SAME

Номер патента: US20160068943A1. Автор: Shin Seung Yong,Sun Ju Hyun,Lee Chang Hun,Bae Jung Chan,MOON Kyoung Il. Владелец: Korea Institute of Industrial Technology. Дата публикации: 2016-03-10.

Medical treatment cock body surface covers turning thin film, uses the medical cock body of this thin film, the precharging type syringe using this cock body and the manufacture method of described thin film

Номер патента: CN103619304B. Автор: 四辻晃. Владелец: COKI ENGINEERING Inc. Дата публикации: 2016-08-31.

Method for the creation of shaped plastic lenses from flat substrates through the application of a thin film coating

Номер патента: WO2010085330A1. Автор: Jeff Pool. Владелец: OCEAN THIN FILMS, INC.. Дата публикации: 2010-07-29.

Optically changing element with a series of thin-film layers

Номер патента: RU2309050C2. Автор: Людвиг БРЕМ,Хайнрих ВИЛД,Людвиг БРЕМ (DE),Хайнрих ВИЛД (DE). Владелец: Леонхард Курц Гмбх Унд Ко. Кг. Дата публикации: 2007-10-27.

Method for manufacturing molded article and preform of molded article

Номер патента: US11993687B2. Автор: Masato Honma,Takashi Fujioka,Kotaro SHINOHARA. Владелец: TORAY INDUSTRIES INC. Дата публикации: 2024-05-28.

Apparatus and methods for combinatorial material screening and discovery

Номер патента: US20240052485A1. Автор: Konrad WALUS,Anindya LaI ROY. Владелец: University of British Columbia. Дата публикации: 2024-02-15.

Nanocellulose support and method for producing same

Номер патента: EP4190887A1. Автор: Hongcheol Lee,Misun LEE,Kyungho JUNG,Juchul LEE,Sanggeun CHO,Koun PARK,Eunseck Kang,Eunja LIM. Владелец: LG ELECTRONICS INC. Дата публикации: 2023-06-07.

Thin film getter structure having miniature heater and manufacturing method thereof

Номер патента: EP4074650A2. Автор: Tao Lu,Shinan Wang. Владелец: Shanghai Industrial Technology Research Institute. Дата публикации: 2022-10-19.

PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME

Номер патента: US20140287251A1. Автор: Sakurai Hideaki,Soyama Nobuyuki,Doi Toshihiro. Владелец: MITSUBISHI MATERIALS CORPORATION. Дата публикации: 2014-09-25.

Nano thin film comprising a compound having two nitrogen-comprising aromatic heterocycles, method for manufacturing the same, and composite nano thin film comprising the same

Номер патента: KR20220082958A. Автор: 임병권,김윤아,조성민,이준엽,채희엽,복신규. Владелец: 성균관대학교산학협력단. Дата публикации: 2022-06-20.

Nano thin film comprising a compound having two nitrogen-comprising aromatic heterocycles, method for manufacturing the same, and composite nano thin film comprising the same

Номер патента: KR102524386B1. Автор: 임병권,김윤아,조성민,이준엽,채희엽,복신규. Владелец: 성균관대학교산학협력단. Дата публикации: 2023-04-21.

Nano-thin film containing a compound having two benzene rings and an amine group, method for manufacturing the same, and composite nano thin film comprising the same

Номер патента: KR20220082960A. Автор: 임병권,김윤아,조성민,이준엽,채희엽,복신규. Владелец: 주식회사 비케이켐. Дата публикации: 2022-06-20.

Drawability enhancement in polymer thin films

Номер патента: WO2023107307A3. Автор: Sheng Ye,Andrew John Ouderkirk,Christopher Yuan Ting Liao,Arman Boromand. Владелец: Meta Platforms Technologies, LLC. Дата публикации: 2023-10-19.

METHOD FOR PRODUCING INORGANIC SUBSTANCE POWDER HIGHLY-ORIENTED THIN FILM SHEET

Номер патента: US20140100328A1. Автор: Sumi Yuichiro,Kawamata Naoyuki. Владелец: TBM CO., LTD.. Дата публикации: 2014-04-10.

METHODS FOR THE VAPOR PHASE DEPOSITION OF POLYMER THIN FILMS

Номер патента: US20180009001A1. Автор: Varanasi Kripa K.,Paxson Adam T.,Gleason Karen K.,Borrelli David C.. Владелец: . Дата публикации: 2018-01-11.

METHOD FOR PREPARING HIGH PURITY ANHYDROSUGAR ALCOHOLS BY THIN FILM DISTILLATION

Номер патента: US20150112088A1. Автор: Kim Jin Kyung,RYU Hoon,JUNG Young Jae,KYUNG Do Hyun. Владелец: SAMYANG GENEX CORPORATION. Дата публикации: 2015-04-23.

VISIBLE LIGHT-RESPONSIVE PHOTOCATALYTIC NANOPARTICLE DISPERSION LIQUID, METHOD FOR PRODUCING SAME, AND MEMBER HAVING PHOTOCATALYTIC THIN FILM ON SURFACE

Номер патента: US20150273440A1. Автор: Kobayashi Takashi,INOUE Tomohiro,FURUDATE Manabu,EGUCHI Yoshitsugu. Владелец: SHIN-ETSU CHEMICAL CO., LTD.. Дата публикации: 2015-10-01.

METHOD FOR FABRICATING ULTRA-LOW DENSITY THREE-DIMENSIONAL THIN FILM STRUCTURE BASED ON PHOTO-LITHOGRAPHY

Номер патента: US20150306794A1. Автор: Lee Min Geun,KANG Ki Ju,HAN Seung Cheul. Владелец: . Дата публикации: 2015-10-29.

METHOD FOR PRODUCING INORGANIC SUBSTANCE POWDER HIGHLY-ORIENTED THIN FILM SHEET

Номер патента: US20160318232A1. Автор: Sumi Yuichiro,Kawamata Naoyuki. Владелец: . Дата публикации: 2016-11-03.

Method for producing highly pure anhydrosugar alcohols by thin film distillation using viscosity-controlling additive

Номер патента: KR101475387B1. Автор: 조성호,정영재,김진경,류훈,경도현,박혁민. Владелец: 주식회사 삼양제넥스. Дата публикации: 2014-12-23.

Method for producing highly pure anhydrosugar alcohols by thin film evaporation

Номер патента: KR101388676B1. Автор: 정영재,김진경,류훈,경도현. Владелец: 주식회사 삼양제넥스. Дата публикации: 2014-04-25.

Method for producing dianhydrohexitol having distillation step by thin film evaporator

Номер патента: JP7129340B2. Автор: ヴィアール エルヴェ,イベール マティアス. Владелец: Roquette Freres SA. Дата публикации: 2022-09-01.

Method for preparing high purity anhydrosugar alcohols by thin film distillation

Номер патента: CN104470880A. Автор: 郑英在,金昣炅,庆岛显,柳熏. Владелец: Samyang Genex Corp. Дата публикации: 2015-03-25.

Method for designing polypeptides for the nanofabrication of thin films, coatings and microcapsules by electrostatic layer-by-layer self assembly.

Номер патента: AU2004325199B2. Автор: Donald T. Haynie. Владелец: Louisiana Tech Univ Foundation. Дата публикации: 2011-09-08.

Method for producing inorganic oxide in form of thin film

Номер патента: TW201815685A. Автор: 大西諒,小田斉. Владелец: 日商花王股份有限公司. Дата публикации: 2018-05-01.

Method for designing polypeptides for the nanofabrication of thin films, coatings and microcapsules by electrostatic layer-by-layer self assembly

Номер патента: IL208932A. Автор: . Владелец: Univ Louisiana Tech Foundation. Дата публикации: 2015-09-24.

Method for producing inorganic substance powder highly-oriented thin film sheet

Номер патента: EP2716696A4. Автор: Yuichiro Sumi,Naoyuki Kawamata. Владелец: TBM Co Ltd. Дата публикации: 2015-05-20.

Method for producing inorganic substance powder highly-oriented thin film sheet

Номер патента: CN103562281A. Автор: 角祐一郎,川真田直之. Владелец: TBM Co Ltd. Дата публикации: 2014-02-05.

A method for the processing of carbon-containing ultra-thin films

Номер патента: CA2401139A1. Автор: Per-Erik Nordal,Nicklas Johansson. Владелец: Nicklas Johansson. Дата публикации: 2001-09-07.

Visible light-responsive photocatalytic nanoparticle dispersion liquid, method for producing same, and member having photocatalytic thin film on surface

Номер патента: US9604198B2. Автор: Takashi Kobayashi,Tomohiro Inoue,Yoshitsugu Eguchi,Manabu Furudate. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2017-03-28.

Method for dissociating optical recording medium substrate and thin film material thereof

Номер патента: TW553827B. Автор: Jenn-Shing Wang,Pei-Chao Cheng. Владелец: Far East College. Дата публикации: 2003-09-21.

Method for designing polypeptides for the nanofabrication of thin films, coatings and microcapsules by electrostatic layer-by-layer self assembly.

Номер патента: MX2007006099A. Автор: Donald T Haynie. Владелец: Univ Louisiana Tech Foundation. Дата публикации: 2007-11-07.

W ultrafine particles, method for producing the same, and W nanocrystal thin film

Номер патента: JP3411497B2. Автор: 俊一郎 田中,良孝 玉生,並社 許. Владелец: Japan Science and Technology Corp. Дата публикации: 2003-06-03.

Visible light-responsive photocatalytic nanoparticle dispersion liquid, method for producing same, and member having photocatalytic thin film on surface

Номер патента: KR20150058379A. Автор: 도모히로 이노우에,마나부 후루다테,다카시 고바야시,요시츠구 에구치. Владелец: 신에쓰 가가꾸 고교 가부시끼가이샤. Дата публикации: 2015-05-28.

SYSTEMS AND METHODS FOR PROCESSING METAL SUBSTRATE THROUGH COMPOSITION FOR THIN-FILM PRE-TREATMENT AND SEALING COMPOSITION

Номер патента: RU2019106628A. Автор: Кевин Т. СИЛЬВЕСТЕР,Джастин Дж. МАРТИН,Эрик Л. МОРРИС,Элизабет С. БРАУН-ЦЕНГ,Питер Л. ВОТРУБА-ДРЦАЛЬ,Шуци ВАН. Владелец: Прк-Десото Интернэшнл, Инк.. Дата публикации: 2020-09-14.

Method for designing polypeptides for the nanofabrication of thin films, coatings and microcapsules by electrostatic layer-by-layer self assembly.

Номер патента: WO2006057633A2. Автор: Donald T. Haynie. Владелец: Louisiana Tech University Foundation. Дата публикации: 2006-06-01.

Thin-film imaging recording constructions incorporating metallic inorganic layers and optical interference structures

Номер патента: US5783364A. Автор: Thomas E. Lewis,Ernest W. Ellis. Владелец: Presstek LLC. Дата публикации: 1998-07-21.

Lubricant solution and method for producing article provided with lubricant coating film

Номер патента: US20150037505A1. Автор: Masaaki Tsuzaki,Hiroaki Mitsuoka,Mai Hashimoto. Владелец: Asahi Glass Co Ltd. Дата публикации: 2015-02-05.

Thin-film magnetic head including a toroidal coil layer and connecting layer formed between a first and second magnetic cores disposed at a back side of the toroidal coil layer

Номер патента: US7259939B2. Автор: Kiyoshi Sato. Владелец: Alps Electric Co Ltd. Дата публикации: 2007-08-21.

Method for producing foam base material product with securing device

Номер патента: US5196151A. Автор: Takashi Kato,Keizo Ito,Shoji Sakaida,Hikaru Andoh. Владелец: Toyoda Gosei Co Ltd. Дата публикации: 1993-03-23.

Thin-film imaging recording constructions incorporating metallic inorganic layers and optical interference structures

Номер патента: EP1099547A2. Автор: Thomas E. Lewis,Ernest W. Ellis. Владелец: Presstek LLC. Дата публикации: 2001-05-16.

Sheet material and barrier packaging container using the same, and method for fabricating the sheet material

Номер патента: US10457456B2. Автор: Akira Isogai,Nao Nishijima. Владелец: Toppan Printing Co Ltd. Дата публикации: 2019-10-29.

Manufacturing method for metal component, and casting mold and mold release film used for same

Номер патента: CN105051259A. Автор: 诸冈笃. Владелец: Fujifilm Corp. Дата публикации: 2015-11-11.

Lightweight high load-bearing reducer and method for generating bionic bone structure of gear thereof

Номер патента: US20230087356A1. Автор: Qiang Huang,Zhangguo YU,Yuyu Zuo,Gao HUANG,Xuxiao FAN,Richeng HUANG,Jingping LIAO,Xingzhong Liu. Владелец: Beijing Institute of Technology BIT. Дата публикации: 2023-03-23.

Bio-cellulose slurry, and dry bio-cellulose material, method for manufacturing dry bio-cellulose material and skin care film using the same

Номер патента: KR101966006B1. Автор: 융-시앙 린,웨이-웬 쿠오. Владелец: 티씨아이 코 엘티디. Дата публикации: 2019-04-04.

Photocatalytic facial mask and method for manufacturing the same

Номер патента: US20220296766A1. Автор: Jae-Hyun Kim,Bongkyun JANG,Sueng-Mo LEE. Владелец: Center for Advanced Meta Materials. Дата публикации: 2022-09-22.

Composite membrane and method for producing a composite membrane

Номер патента: EP3928858A1. Автор: Mohammad Mokbul Hossain,Matteo Camani,Christoph Ellenberger. Владелец: Sefar AG. Дата публикации: 2021-12-29.

Method for measuring adhesive strength of thin film using dispersion characteristics of surface waves, and computer-readable recording medium having program for performing same recorded thereon

Номер патента: US20200217820A1. Автор: Yu Min Choi,Tae Sung Park,Ik Keun PARK,Dong Ryul KWAK. Владелец: Seoul National University of Technology Center for Industry Cllaboration. Дата публикации: 2020-07-09.

Sputtering target, optical information recording medium and method for producing same

Номер патента: EP1757712A4. Автор: H Takami,M Yahagi. Владелец: Nippon Mining and Metals Co Ltd. Дата публикации: 2007-10-17.

System and method for detecting analytes in water

Номер патента: US12044669B2. Автор: Mohamed Jamal Deen,Arif UI ALAM. Владелец: 2055218 Ontario Inc. Дата публикации: 2024-07-23.

Method for measuring optical constant of fluorine-containing organosilicon compound thin film

Номер патента: EP4011935A1. Автор: Takashi Uchida. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2022-06-15.

Method for measuring optical constants of thin film of fluorine-containing organosilicon compound

Номер патента: US12105018B2. Автор: Takashi Uchida. Владелец: Shin Etsu Chemical Co Ltd. Дата публикации: 2024-10-01.

Method for improving adhesion of yttrium-based thin film

Номер патента: US20240229241A9. Автор: Yoshitaka Ozaki,Tomohiro Matsumura,Yuriko YANAI. Владелец: Shinryo Corp. Дата публикации: 2024-07-11.

Manufacturing method of rod with optical thin film and rod block for use in the method

Номер патента: US7154685B2. Автор: Hodaka Norimatsu. Владелец: Nippon Sheet Glass Co Ltd. Дата публикации: 2006-12-26.

Optical method for measuring thin film growth

Номер патента: US20070141734A1. Автор: Colin Flynn. Владелец: Qinetiq Ltd. Дата публикации: 2007-06-21.

Method for Accumulating Microscopic Objects, and Method for Detecting Microscopic Objects Using Same

Номер патента: US20240272157A1. Автор: Takuya Iida,Shiho Tokonami,Masatoshi KANODA. Владелец: UNIVERSITY PUBLIC CORPORATION OSAKA. Дата публикации: 2024-08-15.

Pixel circuit, method for controlling pixel and display device

Номер патента: US20240221699A1. Автор: Jie Wang,LI Lv,Yunyang Liu,Zhiwei Li,Tingting Shen,Baohong KANG,Guangchen Zhang. Владелец: HKC Co Ltd. Дата публикации: 2024-07-04.

GOA circuit module, method for testing the same, display panel and display apparatus

Номер патента: US09983450B2. Автор: Huaiwei Yang. Владелец: Hefei BOE Optoelectronics Technology Co Ltd. Дата публикации: 2018-05-29.

Liquid crystal display panel and method for driving the same

Номер патента: US09448434B2. Автор: XIANG Liu,Jianshe XUE. Владелец: BOE Technology Group Co Ltd. Дата публикации: 2016-09-20.

Method for fabricating broadband near infrared plasmonic waveguide

Номер патента: US20190187368A1. Автор: Hyoung Uk Kim,Seok Joon Kwon,Il Ki Han,Kwan Il Lee,Seonju YEO. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2019-06-20.

Method for switching memory resistance by near-infrared laser beam

Номер патента: US09859001B2. Автор: Jihoon Kim,YongWook LEE. Владелец: lndustry University Cooperation Foundation of Pukyong National University. Дата публикации: 2018-01-02.

Method for producing thin film containing molybdenum

Номер патента: US09695207B2. Автор: Hiroki Sato,Junji Ueyama. Владелец: Adeka Corp. Дата публикации: 2017-07-04.

Apparatus for cathodic protection in an environment in which thin film corrosive fluids are formed and method thereof

Номер патента: US20060163084A1. Автор: Hyun-Young Chang,Gon Hwangbo,Tae-Eun Jin,Min-Yu Shin. Владелец: Korea Power Engineering Company Inc. Дата публикации: 2006-07-27.

Production method for magnetic recording medium

Номер патента: US20090021860A1. Автор: Masato Fukushima. Владелец: Showa Denko KK. Дата публикации: 2009-01-22.

Flux Transformer Formed of an Oxide Superconducting Thin Film and Method for Manufacturing the Same

Номер патента: CA2145827A1. Автор: Tatsuoki Nagaishi,Hirokazu Kugai. Владелец: Individual. Дата публикации: 1995-09-30.

Method for defect marking and analysis of thin film hard disks

Номер патента: MY123541A. Автор: Craig Cosci Michael,Marion Green Paul,Ann Oliver Lisa. Владелец: Hitachi Global Storage Tech Netherlands B V. Дата публикации: 2006-05-31.

Reliability testing method of dielectric thin film

Номер патента: US6269315B1. Автор: Mu-Chun Wang,Kuan-Yu Fu,Sheng-Hsing Yang,Donald Cheng,Chuan H. Liu. Владелец: United Microelectronics Corp. Дата публикации: 2001-07-31.

Wire grid polarizer and method for fabricating the same

Номер патента: US09581745B2. Автор: LEI Xie,Tae Woo Kim,Dae Ho Yoon,Moon Gyu LEE. Владелец: Samsung Display Co Ltd. Дата публикации: 2017-02-28.

Thin film transistor liquid crystal display and method for manufacturing the same

Номер патента: US20030038899A1. Автор: Wen-Jian Lin. Владелец: Prime View International Co Ltd. Дата публикации: 2003-02-27.

Glass substrate for information recording medium and method for manufacturing the same

Номер патента: MY182274A. Автор: Noriko Shimazu. Владелец: Hoya Corp. Дата публикации: 2021-01-18.

Integrated thin-film resistive sensor with integrated heater and metal layer thermal equalizer

Номер патента: US12066514B2. Автор: Zhong You,Vamsikrishna Parupalli. Владелец: Cirrus Logic Inc. Дата публикации: 2024-08-20.

Thin Film Cell Encapsulation Devices

Номер патента: US20240327782A1. Автор: Tejal A. Desai,Crystal NYITRAY,Ryan Chang. Владелец: UNIVERSITY OF CALIFORNIA. Дата публикации: 2024-10-03.

Method for producing carrier for electrophotographic developer, carrier for electrophotographic developer, electrophotographic developer, and image forming method

Номер патента: CA2710091A1. Автор: Yoshihiro Norikane,Ryota Inoue,Shinji Ohtani. Владелец: Individual. Дата публикации: 2009-06-25.

Antimicrobial multilayer knit fabric having air layer, and manufacturing method therefor

Номер патента: US20210198818A1. Автор: Jang Whan Kim. Владелец: Lsk Finetex Co ltd. Дата публикации: 2021-07-01.

Method for designing machine learning model using a 3d user interface and system using same

Номер патента: US20240310987A1. Автор: Sunggoo CHO. Владелец: Light & Math Inc. Дата публикации: 2024-09-19.

Method for manufacturing liquid crystal display device provided with front plate, and liquid crystal display device provided with front plate

Номер патента: US09563075B2. Автор: Takashi Murakami,Norie Tanihara. Владелец: KONICA MINOLTA INC. Дата публикации: 2017-02-07.

Method for manufacturing a thin film actuatable mirror array having an enhanced structural integrity

Номер патента: US6136390A. Автор: Myong-Hyun Park,Jin-Hun Kim,Hyoung-Jung Kim. Владелец: Daewoo Electronics Co Ltd. Дата публикации: 2000-10-24.

Chitosan scaffolds and thin films for the expansion of human neural stem cells

Номер патента: WO2023183769A1. Автор: Yang Zhou,Miqin Zhang,Yoshiki Ando,Fei-Chien CHANG,Matthew Michael JAMES. Владелец: UNIVERSITY OF WASHINGTON. Дата публикации: 2023-09-28.

Antireflection coating, cover structure, and method for manufacturing antireflection coating

Номер патента: US20240053512A1. Автор: Gao Yuan. Владелец: Honor Device Co Ltd. Дата публикации: 2024-02-15.

Delivery devices and methods for making the same

Номер патента: US20230285305A1. Автор: Peter X. Ma,Ming Dang,Laurie K. McCauley. Владелец: University of Michigan. Дата публикации: 2023-09-14.

Delivery devices and methods for making the same

Номер патента: EP3515417A1. Автор: Peter X. Ma,Ming Dang,Laurie K. McCauley. Владелец: University of Michigan. Дата публикации: 2019-07-31.

Delivery devices and methods for making the same

Номер патента: US20230157961A1. Автор: Peter X. Ma,Ming Dang,Laurie K. McCauley. Владелец: University of Michigan. Дата публикации: 2023-05-25.

Driver for driving display panel and method for reading / writing in memory thereof and thin film transistor liquid crystal display using the same

Номер патента: TW200830253A. Автор: Heng-Sheng Chou,Chun-Hung Huang,Ying-Chi Wang. Владелец: AU OPTRONICS CORP. Дата публикации: 2008-07-16.

Method of forming thin films, device for forming thin films, and thin film forming process monitoring method

Номер патента: RU2324765C2. Автор: Тосиаки КАКЕМУРА,Хирото КАСИМА,Манабу ЦУДЗИНО. Владелец: Топпан Принтинг Ко., Лтд.. Дата публикации: 2008-05-20.

Large-area single-crystal silver thin-film structure using single-crystal copper thin-film buffer layer and manufacturing method therefor

Номер патента: US20240027661A1. Автор: Se Young Jeong,You Sil LEE,Su Jae Kim. Владелец: University Industry Cooperation Foundation of Pusan National University. Дата публикации: 2024-01-25.

A method for manufacturing enzyme granules, and enzyme granules

Номер патента: EP4389882A1. Автор: Katja Palmunen,Leena Lehtikari,Mirkka PERKKALAINEN. Владелец: AB Enzymes Oy. Дата публикации: 2024-06-26.

A method for manufacturing enzyme granules, and enzyme granules

Номер патента: WO2024134012A1. Автор: Katja Palmunen,Leena Lehtikari,Mirkka PERKKALAINEN. Владелец: AB Enzymes Oy. Дата публикации: 2024-06-27.

Thin film magnetic head and magnetic disk device

Номер патента: US20100177440A1. Автор: Kei Hirata,Takayasu Kanaya,Shinji Hara,Seiichi Takayama,Yohei Koyanagi,Toshiyuki AYUKAWA. Владелец: TDK Corp. Дата публикации: 2010-07-15.

Ion beam deposition of ruthenium thin films

Номер патента: US20240102150A1. Автор: Robert Caldwell,Frank Cerio,Rutvik J. Mehta,Yuejing Wang. Владелец: Veeco Instruments Inc. Дата публикации: 2024-03-28.

Structure and driving method for active photoelectric element

Номер патента: US20070222725A1. Автор: Wen-Chun Wang,Yi-Chin Wang,Henta Kang. Владелец: Wintek Corp. Дата публикации: 2007-09-27.

Ion beam deposition of ruthenium thin films

Номер патента: WO2024073368A1. Автор: Robert Caldwell,Frank Cerio,Rutvik Mehta,Yuejing Wang. Владелец: VEECO INSTRUMENTS INC.. Дата публикации: 2024-04-04.

Method for improving adhesion of yttrium-based thin film

Номер патента: US20240133037A1. Автор: Yoshitaka Ozaki,Tomohiro Matsumura,Yuriko YANAI. Владелец: Shinryo Corp. Дата публикации: 2024-04-25.

Luminescent compound, method for producing luminescent compound, luminescent composition, luminescent thin film and luminescent particles

Номер патента: US20230235217A1. Автор: Shumpei HITOSUGI. Владелец: KONICA MINOLTA INC. Дата публикации: 2023-07-27.

Method for adjustment of thermally stable pressure sensor based on thin-film nano- and micro-electromechanical system

Номер патента: RU2581454C1. Автор: Валерий Анатольевич Васильев,Евгений Михайлович Белозубов,Нина Евгеньевна Белозубова. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Пензенский государственный университет" (ПГУ). Дата публикации: 2016-04-20.

Method for producing glass thin film

Номер патента: US5660611A. Автор: Hiroo Kanamori,Shinji Ishikawa,Akira Urano,Haruhiko Aikawa,Chizai Hirose,Masahide Saitoh. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 1997-08-26.

Electrophoretic display layer with thin film top electrode

Номер патента: US11892739B2. Автор: Richard J. Paolini, Jr.,Pavel Kamaev,David Darrell Miller,Jay William Anseth,Nishit Murari. Владелец: E Ink Corp. Дата публикации: 2024-02-06.

Method for determining number of layers of two-dimensional thin film atomic structure and device for determining number of layers of two-dimensional thin film atomic structure

Номер патента: US20130087705A1. Автор: Hidefumi Hiura,Hisao Miyazaki,Kazuhito Tsukagoshi. Владелец: NEC Corp. Дата публикации: 2013-04-11.

Fabrication of pure and modified Ta2O5 thin film with enhanced properties for microwave communication, dynamic random access memory and integrated electronic applications

Номер патента: US20020031671A1. Автор: Eric Ngo,Pooran Joshi,Melanie Cole. Владелец: Individual. Дата публикации: 2002-03-14.

Electrophoretic display layer with thin film top electrode

Номер патента: US20240168357A1. Автор: Richard J. Paolini, Jr.,Pavel Kamaev,David Darrell Miller,Jay William Anseth,Nishit Murari. Владелец: E Ink Corp. Дата публикации: 2024-05-23.

Manufacturing method of thin-film magnetic head, wafer for thin-film magnetic head and thin-film magnetic head

Номер патента: US8098462B2. Автор: Yoshiaki Tanaka,Yuji Otsubo,Tetsuya Hiraki,Sohei Horiuchi. Владелец: TDK Corp. Дата публикации: 2012-01-17.

Process for producing a thin-film magnetic tape head

Номер патента: AU7673591A. Автор: Dietmar Uhde. Владелец: Deutsche Thomson Brandt GmbH. Дата публикации: 1991-11-11.

Thin film of aluminate including rare earth elements, method of producing same, and light-accumulation optical element

Номер патента: US20020086190A1. Автор: Tomoko Miyaura. Владелец: Minolta Co Ltd. Дата публикации: 2002-07-04.

Method of producing thin film magnetic head

Номер патента: US20090223034A1. Автор: Hironori Saito. Владелец: Fujitsu Ltd. Дата публикации: 2009-09-10.

Manufacturing method of thin-film magnetic head, wafer for thin-film magnetic head and thin-film magnetic head

Номер патента: US20100321822A1. Автор: Yoshiaki Tanaka,Yuji Otsubo,Tetsuya Hiraki,Sohei Horiuchi. Владелец: TDK Corp. Дата публикации: 2010-12-23.

Systems and methods of monitoring thin film deposition

Номер патента: US20030041654A1. Автор: John Larson,Mark Hueschen,Richard Karlquist,Herbert Ko,Kent Carey. Владелец: Individual. Дата публикации: 2003-03-06.

Thin film transistor array substrate with multiple chamfers and liquid crystal display device

Номер патента: US7598525B2. Автор: Hideo Kawano,Hideki Sunayama. Владелец: Info Vision Optoelectronics Holdings Ltd. Дата публикации: 2009-10-06.

Janus transition metal dichalcogenide thin film and method of fabricating the same

Номер патента: US20230151482A1. Автор: Won Jun Lee,Suk Ho Chol,Chan Wook Jang. Владелец: Industry Academic Cooperation Foundation of Kyung Hee University. Дата публикации: 2023-05-18.

Non-volatile digital memory including thin film resistors

Номер патента: US09460789B2. Автор: Vincent Rabary,Nicolas Aupetit. Владелец: STMicroelectronics Grenoble 2 SAS. Дата публикации: 2016-10-04.

Chemical vapor deposition method for the thin film of semiconductor

Номер патента: CA1268688A. Автор: Seiji Kojima,Hiroshi Kikuchi,Masakiyo Ikeda,Yuzo Kashiwayanagi. Владелец: Furukawa Electric Co Ltd. Дата публикации: 1990-05-08.

Thin film actuated mirror array in an optical projection system and method for manufacturing the same

Номер патента: US5754330A. Автор: Yun-Woo Nam. Владелец: Daewoo Electronics Co Ltd. Дата публикации: 1998-05-19.

Thin film actuated mirror array in an optical projection system and method for manufacturing the same

Номер патента: CA2278624A1. Автор: Yoon Joon Choi. Владелец: Individual. Дата публикации: 1998-07-30.

Determining the presence of defects in thin film structures

Номер патента: US5982482A. Автор: Keith A. Nelson,John A. Rogers. Владелец: Massachusetts Institute of Technology. Дата публикации: 1999-11-09.

WEARABLE THIN-FILM MAGNETIC RESONANCE IMAGING (MRI) RECEIVE COIL INTEGRATED WITH MRI GUIDED TRANSCRANIAL FOCUSED ULTRASOUND (tFUS ) THERAPY SYSTEM

Номер патента: US20230293038A1. Автор: HSU Chang,Ching Yao,San-Chao Huang. Владелец: Individual. Дата публикации: 2023-09-21.

System for real-time analysis of material distribution in cigs thin film using laser-induced breakdown spectroscopy

Номер патента: US20130155404A1. Автор: Seokhee Lee,Hee-Sang Shim,Sungho Jeong. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2013-06-20.

Thin film head and its production

Номер патента: US20050280933A1. Автор: Masatoshi Nakayama. Владелец: TDK Corp. Дата публикации: 2005-12-22.

Thin film transistor liquid crystal display and method for manufacturing the same

Номер патента: US20040104434A1. Автор: Wen-Jian Lin. Владелец: Prime View International Co Ltd. Дата публикации: 2004-06-03.

WEARABLE THIN-FILM MAGNETIC RESONANCE IMAGING (MRI) RECEIVE COIL INTEGRATED WITH MRI GUIDED TRANSCRANIAL FOCUSED ULTRASOUND (tFUS) THERAPY SYSTEM

Номер патента: WO2023183266A1. Автор: HSU Chang,Ching Yao,San-Chao Huang. Владелец: Mbinsight Systems, Inc.. Дата публикации: 2023-09-28.

Method for manufacturing zinc oxide thin film, method for manufacturing semiconductor element substrate using the same, method for manufacturing photoelectric conversion element, zinc oxide thin film, semiconductor element substrate, and photoelectric conversion element

Номер патента: JP3445132B2. Автор: 深照 松山. Владелец: Canon Inc. Дата публикации: 2003-09-08.

Method for defect marking and analysis of thin film hard disks

Номер патента: US6281677B1. Автор: Paul Marion Green,Michael Craig Cosci,Lisa Ann Oliver. Владелец: International Business Machines Corp. Дата публикации: 2001-08-28.

Integrated thin-film resistive sensor with integrated heater and metal layer thermal equalizer

Номер патента: US20240053425A1. Автор: Zhong You,Vamsikrishna Parupalli. Владелец: Cirrus Logic International Semiconductor Ltd. Дата публикации: 2024-02-15.

Systems And Methods For Integrating A-Axis Oriented Barium Titanate Thin Films On Silicon (001) Via Strain Control

Номер патента: US20200409190A1. Автор: Marc Reynaud,Alexander A. Demkov,Agham POSADAS. Владелец: University of Texas System. Дата публикации: 2020-12-31.

Method to perform a mechanical adhesion test for thin film interfaces

Номер патента: WO2022263002A1. Автор: Moses RICHTER,Andreas Rueckerl. Владелец: Ams-Osram International Gmbh. Дата публикации: 2022-12-22.

Method and apparatus for compensating optical disks for effects of thin films

Номер патента: WO2002025649A2. Автор: Brian S. Medower,David L. Blankenbeckler. Владелец: Dataplay, Inc.. Дата публикации: 2002-03-28.

Thin-film-forming material including a molybdenum imide compound

Номер патента: US09988411B2. Автор: Hiroki Sato,Junji Ueyama. Владелец: Adeka Corp. Дата публикации: 2018-06-05.

Optical system having optical thin film including amorphous silicon oxide-based binder

Номер патента: US09915761B2. Автор: Hitoshi Ishizawa,Tsuyoshi Murata,Shunsuke Niisaka. Владелец: Nikon Corp. Дата публикации: 2018-03-13.

NOVEL AMINO-SILYL AMINE COMPOUND, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN-FILM USING THE SAME

Номер патента: US20160122369A1. Автор: Kim Sung Gi,Lee Sang Ick,Kim Myong Woon,JANG Se Jin,YANG Byeong-il,LEE Sang-Do,SEOK Jang Hyeon. Владелец: . Дата публикации: 2016-05-05.

NOVEL TRISILYL AMINE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME

Номер патента: US20160333030A1. Автор: Kim Jong Hyun,Kim Sung Gi,Kim Do Yeon,Lee Sang Ick,Kim Myong Woon,JANG Se Jin,YANG Byeong-il,LEE Sang-Do,SEOK Jang Hyeon. Владелец: DNF CO., LTD.. Дата публикации: 2016-11-17.

Method of producing thin-film materials based on silicon, phosphorus, calcium and magnesium oxides

Номер патента: RU2719580C1. Автор: Людмила Павловна Борило,Екатерина Сергеевна Лютова,Лариса Николаевна Спивакова,Елена Анатольевна Изосимова. Владелец: Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ). Дата публикации: 2020-04-21.

Method of making inorganic chlorine-containing perovskite thin films

Номер патента: RU2719167C1. Автор: Сергей Владимирович Макаров,Анатолий Петрович Пушкарев,Татьяна Геннадьевна Ляшенко,Сергей Станиславович Аношкин. Владелец: федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО). Дата публикации: 2020-04-17.

Novel amino-silyl amine compound, method for perparing the 'same and silicon-containing thin-film using the same

Номер патента: WO2014196827A2. Автор: Sang Ick Lee,JANG Hyeon Seok,Jong Hyun Kim,Myong Woon Kim,Sang-Do Lee,Se Jin Jang,Jun Hee Cho,Sung Gi Kim,Byeong-Il Yang. Владелец: DNF CO., LTD.. Дата публикации: 2014-12-11.

Thin film delamination detection for magnetic disks

Номер патента: US6580266B2. Автор: LI TANG,Yan Liu,Shanlin Duan,Bradley Frederick Baumgartner,Bob C. Robinson,Ka Chi Wong. Владелец: Hitachi Global Storage Technologies Netherlands BV. Дата публикации: 2003-06-17.

Thin film device with lead conductor film of increased surface area

Номер патента: US20080274379A1. Автор: Atsushi Yamaguchi,Kiyoshi Noguchi,Makoto Sato,Shingo Miyata. Владелец: TDK Corp. Дата публикации: 2008-11-06.

Process for manufacturing multi-layered thin film by dry vacuum vapor deposition

Номер патента: WO2009017376A3. Автор: Hong Chul Kim,Jeong Rae Kim,Hyun Joong Kim. Владелец: CEKO Corp Ltd. Дата публикации: 2009-04-16.

METHOD FOR MANUFACTURING METAL OR METAL OXIDE POROUS THIN FILM HAVING THREE-DIMENSIONAL OPEN NETWORK STRUCTURE THROUGH PORE SIZE ADJUSTMENT IN DRY PROCESS AND METAL OR METAL OXIDE POROUS THIN FILM HAVING THREEDIMENSIONAL OPEN NETWORK STRUCTUREMANUFACTURED BY SAME

Номер патента: US20190153585A1. Автор: Kim Hyun Jong,LEE Ho Nyun. Владелец: Korea Institute of Industrial Technology. Дата публикации: 2019-05-23.

Thin film magnetic recording media

Номер патента: US4673617A. Автор: Takashi Suzuki,Koichi Shinohara,Hideki Yoshida. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1987-06-16.

Thin film piezoelectric micro-actuator for head gimbal assembly

Номер патента: US20070230060A1. Автор: Masashi Shiraishi,Ming Gao Yao. Владелец: Individual. Дата публикации: 2007-10-04.

Thin film thickness monitor

Номер патента: US4355903A. Автор: John R. Sandercock. Владелец: RCA Corp. Дата публикации: 1982-10-26.

Thin-film splash guard for a dental cuspidor

Номер патента: US8393022B2. Автор: Damian D. Dachowski. Владелец: Individual. Дата публикации: 2013-03-12.

Driver of promoting pixel charging ability of thin film transistor and method thereof

Номер патента: US8928569B2. Автор: Chihtsung Kang. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2015-01-06.

Thin-film micromesh for medical devices and related methods

Номер патента: US20220378436A1. Автор: Vikas Gupta,Ian A. Cook,Colin Kealey. Владелец: Monarch Biosciences Inc. Дата публикации: 2022-12-01.

Thin-film micromesh medical devices and related methods

Номер патента: EP4285872A1. Автор: Vikas Gupta,Ian A. Cook,Colin Kealey. Владелец: Monarch Biosciences Inc. Дата публикации: 2023-12-06.

Apparatus for holding and tuning a thin-film optical assembly

Номер патента: EP1060422A1. Автор: Jing-Yu Xu. Владелец: Chorum Technologies Inc. Дата публикации: 2000-12-20.

Driver of Promoting Pixel Charging Ability of Thin Film Transistor and Method Thereof

Номер патента: US20130038235A1. Автор: Chihtsung Kang. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2013-02-14.

Thin-film micromesh medical devices and related methods

Номер патента: EP3316827A1. Автор: Vikas Gupta,Ian A. Cook,Colin Kealey. Владелец: NSvascular Inc. Дата публикации: 2018-05-09.

Thin film magnetic device and method of manufacturing the same

Номер патента: US20070230043A1. Автор: Taku Masai. Владелец: TDK Corp. Дата публикации: 2007-10-04.

VACUUM APPARATUS, METHOD FOR COOLING HEAT SOURCE IN VACUUM, AND THIN FILM MANUFACTURING METHOD

Номер патента: US20140050850A1. Автор: Shimada Takashi,HONDA Kazuyoshi,Bessho Kunihiko,Okazaki Sadayuki. Владелец: . Дата публикации: 2014-02-20.

Single crystal thin film

Номер патента: US4876144A. Автор: Kazumasa Takagi,Toshio Kobayashi,Takanobu Takayama,Kenzo Susa,Norio Ohta. Владелец: HITACHI LTD. Дата публикации: 1989-10-24.

Non-linear optical thin film layer system

Номер патента: US5993544A. Автор: Lee A. Knauss,Kolagani S. Harshavardhan. Владелец: Neocera Inc. Дата публикации: 1999-11-30.

Thin film magnetoresistive sensor

Номер патента: GB1534735A. Автор: . Владелец: International Business Machines Corp. Дата публикации: 1978-12-06.

Sensor having a thin film element

Номер патента: US6101872A. Автор: Klaus Heyers,Hans Hecht,Jiri Marek,Martin Zechnall,Martin Willmann,Christoph Treutler,Manfred Lembke,Herbert Goebel,Hans-Ulrich Gruber,Joerg Buth,Andreas Lock. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2000-08-15.

Method for detecting chemical resistance of TFT-LCD (thin film transistor-liquid crystal display) glass and method for measuring lithium content of glass

Номер патента: CN105588797A. Автор: 李刚,张广涛,闫冬成,王丽红,李俊峰,胡恒广. Владелец: WUHU DONGXU OPTOELECTRONIC EQUIPMENT TECHNOLOGY Co Ltd. Дата публикации: 2016-05-18.

Method for objective and accurate thickness measurement of thin films on a microscopic scale

Номер патента: US20030222215A1. Автор: Heiko Stegmann,Hans-Jürgen Engelmann,Quentin de Robillard,Holger Saage. Владелец: Individual. Дата публикации: 2003-12-04.

(meth)acryloyl group-containing acrylic-modified alkyd resin and undercoat agent for inorganic-material thin film

Номер патента: US20200002571A1. Автор: Hirotake Fukuoka,Akio Umino. Владелец: DIC Corp. Дата публикации: 2020-01-02.

Thin film characteristic measuring apparatus

Номер патента: US20230175834A1. Автор: Jun Park,Yun Suk Jung,Seh Won Ahn. Владелец: LG ELECTRONICS INC. Дата публикации: 2023-06-08.

Connection Mechanism for Thin Film Stimulation Leads

Номер патента: US20210299451A1. Автор: Norbert Kaula,Angelo Fruci,Todd Hanson,Jeremy Lug,Johnny Khith,Daniel Oster,Alanna Hentges,Angel Oudomrak. Владелец: Cirtec Medical Corp. Дата публикации: 2021-09-30.

INDIUM TIN OXIDE POWDER, METHOD FOR PRODUCING SAME, DISPERSION, PAINT, AND FUNCTIONAL THIN FILM

Номер патента: US20130187104A1. Автор: Shiraishi Shinya,Takenoshita Ai,Umeda Hirotoshi. Владелец: . Дата публикации: 2013-07-25.

METHOD FOR LAYER BY LAYER OPTIMIZATION OF A THIN FILM

Номер патента: US20200024728A1. Автор: THORNHILL David. Владелец: . Дата публикации: 2020-01-23.

METHOD FOR MANUFACTURING TWO-DIMENSIONAL TRANSITION METAL DICHALCOGEMIDE THIN FILM

Номер патента: US20180105930A1. Автор: KANG Sang Woo,MUN Ji Hun. Владелец: Korea Research Institute of Standards and Science. Дата публикации: 2018-04-19.

METHOD FOR PRODUCING INORGANIC OXIDE IN FORM OF THIN FILM

Номер патента: US20190169040A1. Автор: ONISHI Ryo,ODA Tsuyoshi. Владелец: KAO CORPORATION. Дата публикации: 2019-06-06.

METHOD FOR PRODUCING INORGANIC OXIDE IN FORM OF THIN FILM

Номер патента: US20190367363A1. Автор: ONISHI Ryo,ODA Tsuyoshi. Владелец: KAO CORPORATION. Дата публикации: 2019-12-05.

Systems And Methods For Integrating A-Axis Oriented Barium Titanate Thin Films On Silicon (001) Via Strain Control

Номер патента: US20200409190A1. Автор: Demkov Alexander A.,Posadas Agham,Reynaud Marc. Владелец: . Дата публикации: 2020-12-31.

Method for adhensive of substrate using the adhensive thin film

Номер патента: KR101905147B1. Автор: 유재범,임성갑,문희연,곽무진,김도흥. Владелец: 한국과학기술원. Дата публикации: 2018-10-08.

Device and method for detecting a substance with a piezoelectric thin film resonator

Номер патента: EP1549937B1. Автор: Wolfram Wersing,Heinrich Zeininger,Hans-Dieter Feucht,Reinhard Gabl. Владелец: SIEMENS AG. Дата публикации: 2013-03-20.

DEVICE AND METHOD FOR MEASURING HEIGHT IN THE PRESENCE OF THIN FILMS

Номер патента: FR3045813B1. Автор: Benoit Thouy,Jean-Philippe Piel,Jeff WuYu SU. Владелец: Fogale Nanotech SA. Дата публикации: 2020-05-01.

Method for preparing ruthenium-core platinum-shell nanometer thin film having high catalytic activity

Номер патента: CN101038969A. Автор: 李巧霞,蔡文斌. Владелец: FUDAN UNIVERSITY. Дата публикации: 2007-09-19.

Method for in-situ growth of Cu2ZnSnS4 photovoltaic thin film

Номер патента: CN101805890A. Автор: 张坤,张治安,赖延清,李劼,李轶,刘芳洋,刘业翔,匡三双. Владелец: CENTRAL SOUTH UNIVERSITY. Дата публикации: 2010-08-18.

Thin film wound cover, suction assisted wound treatment system using the same, method of using the thin film wound cover and method of making the same

Номер патента: CA2703942A1. Автор: Christopher L. Radl,Trevor G. Smith,Lauren E. Bentley,Allison L. Lloyd. Владелец: Allison L. Lloyd. Дата публикации: 2009-04-30.

Method for addressing active matrix displays with ferroelectrical thin film transistor based pixels

Номер патента: WO2007057811A1. Автор: Edzer Huitema,Gerwin Gelinck. Владелец: Polymer Vision Limited. Дата публикации: 2007-05-24.

Method for studying chemical-physical properties of a thin film

Номер патента: WO2000055613A1. Автор: Patrik Dahlqvist. Владелец: Q-Sense Ab. Дата публикации: 2000-09-21.

Method for addressing active matrix displays with ferroelectrical thin film transistor based pixels

Номер патента: TW200731212A. Автор: Edzer Huitema,Gerwin Gelinck. Владелец: Koninkl Philips Electronics Nv. Дата публикации: 2007-08-16.

Method for measuring refractive index and thickness of thin film through laser modification based on PL interference phenomenon

Номер патента: CN110196240B. Автор: 姜澜,孙靖雅,谢钰铎. Владелец: Beijing Institute of Technology BIT. Дата публикации: 2020-05-19.

Method for addressing active matrix displays with ferroelectrical thin film transistor based pixels

Номер патента: EP1949353A1. Автор: Edzer Huitema,Gerwin Gelinck. Владелец: Polymer Vision BV. Дата публикации: 2008-07-30.

Method for ionically cross-linking polysaccharide material for thin film applications and products produced therefrom

Номер патента: WO2007065118A2. Автор: Yasushi Pedro Kato. Владелец: Innograft, Llc. Дата публикации: 2007-06-07.

Aqueous composition for metal surface treatment, metal surface treatment method using the same and manufacturing method for metal material with film, and metal surface treatment film using the composition and method

Номер патента: JP2013023524A. Автор: Masumi Hara,栄作 岡田,Eisaku Okada,幸誠 屋部,真純 原,Yukimasa Okube. Владелец: Nihon Parkerizing Co Ltd. Дата публикации: 2013-02-04.

Apparatus and method for carrying out thickness measurements of a thin film layer with deformations and local changes in inclination

Номер патента: DE69316275D1. Автор: Anthony M Ledger. Владелец: Ipec Precision Inc. Дата публикации: 1998-02-19.

Lithium cobaltate sintered body, sputtering target produced using the sintered body, method for producing lithium cobaltate sintered body, and thin film comprising lithium cobaltate

Номер патента: JP6585251B2. Автор: 和幸 佐藤,佐藤　和幸,瑶輔 遠藤,了 鈴木,鈴木　了. Владелец: JX Nippon Mining and Metals Corp. Дата публикации: 2019-10-02.

Method for preparing flexible copper indium gallium selenide thin-film solar cell

Номер патента: CN101859812B. Автор: 霍平,张�林,胡杰. Владелец: Zhejiang University ZJU. Дата публикации: 2012-01-04.

Methods for ionically cross-linking gellan gum for thin film applications and medical devices produced therefrom

Номер патента: WO2008067518A3. Автор: Leonard Pinchuk,Marc Ramer,Yasushi Pedro Kato. Владелец: Innograft Llc. Дата публикации: 2008-12-11.

Method for improving photovoltaic effect of carbon doped thin-film material

Номер патента: CN103247710A. Автор: 薛庆忠,王盛,杜永刚,夏富军. Владелец: China University of Petroleum East China. Дата публикации: 2013-08-14.

Methods for ionically cross-linking gellan gum for thin film applications and medical devices produced therefrom

Номер патента: CA2671050A1. Автор: Leonard Pinchuk,Marc Ramer,Yasushi Pedro Kato. Владелец: Innograft, Llc. Дата публикации: 2008-06-05.

Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices

Номер патента: US20150380024A1. Автор: Shigeru Matsuo,Yusuke Hara,Shinzoh Mitomi,Hidetaka Sakumichi. Владелец: Nippon Tungsten Co Ltd. Дата публикации: 2015-12-31.

TETRACARBOXYLIC DIANHYDRIDE, CARBONYL COMPOUND, POLYAMIC ACID, POLYIMIDE, METHODS FOR PRODUCING THE SAME, SOLUTION USING POLYAMIC ACID, AND FILM USING POLYIMIDE

Номер патента: US20180237638A1. Автор: Watanabe Daisuke,KOMATSU Shinichi,MATSUO Yusuke,Noguchi Masaki,UENO Ryuichi. Владелец: JXTG NIPPON OIL & ENERGY CORPORATION. Дата публикации: 2018-08-23.

Organometallic precursors for thin-film deposition of metal oxide or silicon-containing metal oxide, and deposition process of the thin films therefrom

Номер патента: KR101216068B1. Автор: 박정우,김준영,박미라,박민정,조보연,유경희. Владелец: 주식회사 한솔케미칼. Дата публикации: 2012-12-27.

Combustion chamber with a low contamination level and method for combustion control therefor

Номер патента: RU2766102C1. Автор: Хао ЧЭНЬ,Вэй Чэнь,Лунфэй ДАН,Пэй ХЭ,Жун СЮЙ,Яцзя Э,Пань ЧЭНЬ,Минмин СУ. Владелец: Аесс Кемешл Эйркрафт Энджин Ко., Лтд.. Дата публикации: 2022-02-07.

Method for erection of constructive elements of building/construction from monolithic concrete and technological equipment for implementation thereof (invention group, options)

Номер патента: RU2685586C1. Автор: Николае Попеску,Андрей Фурдуй,Анна Корецки,Павел ПОПЕСКУ. Владелец: Корецки Ана. Дата публикации: 2019-04-22.

MAGNESIUM FLUORIDE PARTICLES, METHOD FOR PRODUCING MAGNESIUM FLUORIDE PARTICLES, DISPERSION SOLUTION OF MAGNESIUM FLUORIDE PARTICLES, METHOD FOR PRODUCING DISPERSION SOLUTION OF MAGNESIUM FLUORIDE PARTICLES, COMPOSITION FOR FORMING LOW REFRACTIVE INDEX LAYER, METHOD FOR PRODUCING COMPOSITION FOR FORMING A LOW REFRACTIVE INDEX LAYER, SUBSTRATE WITH LOW REFRACTIVE INDEX LAYER, AND METHOD FOR MANUFACTURING SUBSTRATE WITH LOW REFRACTIVE INDEX LAYER

Номер патента: US20150072134A1. Автор: Yabune Tatsuhiro,Tomisaki Megumi,Uraya Masanori,Takatori Hiroaki. Владелец: STELLA CHEMIFA CORPORATION. Дата публикации: 2015-03-12.

Polarizing plate and method for manufacturing thereof, protective film for polarizing plates, optical film using polarizing plate, and visual display

Номер патента: KR100760488B1. Автор: 야노슈우지,마에다히로에,사이끼유우지. Владелец: 닛토덴코 가부시키가이샤. Дата публикации: 2007-09-20.

Functional Film Free Reduced Pressure Adhesive Tape, A Method For Preparing PDP Filer For 3D Display Without Functional Film Using Thereof, And PDP Filter For 3D Display Without Functional Film

Номер патента: KR101295509B1. Автор: 이승면,안치희,지상봉. Владелец: 주식회사 테이팩스. Дата публикации: 2013-08-09.

Gas sensor and method for manufacturing the same

Номер патента: US20220082523A1. Автор: Ting-Chang Chang,Shih-Kai Lin,Wen-Chung Chen,Yi-Ting Tseng,Chun-Chu Lin,Po-Hsun Chen. Владелец: National Sun Yat Sen University. Дата публикации: 2022-03-17.

Double-layered medical membrane and method for manufacturing the same

Номер патента: US20230105978A1. Автор: Te-Chao Liao,Ching-Yao Yuan,Wen-Jui Cheng,Min-Fan Chung. Владелец: Nan Ya Plastics Corp. Дата публикации: 2023-04-06.

Antimicrobial multilayer knitted fabric having air layer, and manufacturing method therefor

Номер патента: EP3910100A1. Автор: Jang Whan Kim. Владелец: Lsk Finetex Co ltd. Дата публикации: 2021-11-17.

METHODS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS USING GROUP 4 TRANSITION METAL-CONTAINING FILMS FORMING COMPOSITIONS

Номер патента: US20210221830A1. Автор: Girard Jean-Marc,Wan Zhiwen,WANGQ Ziyun. Владелец: . Дата публикации: 2021-07-22.

Methods for vapor deposition of group 4 transition metal-containing films using Group 4 transition metal-containing films forming compositions

Номер патента: US11008351B2. Автор: Jean-Marc Girard,Ziyun Wang,Zhiwen WAN. Владелец: LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude. Дата публикации: 2021-05-18.

Polycrystalline-silicon carbide lamination thin-film solar cell

Номер патента: CN101393942B. Автор: 吴天如,沈鸿烈,黄海宾,鲁林峰. Владелец: Nanjing University of Aeronautics and Astronautics. Дата публикации: 2010-11-10.

Method of forming a layer of silica to be eliminated subsequently and method for mounting an integrated optical component

Номер патента: US5736429A. Автор: Estelle Derouin,Claude Artigue,Denis Tregoat,Frederic Pommereau. Владелец: Alcatel NV. Дата публикации: 1998-04-07.

Method for manufacturing photo mask

Номер патента: US20100068630A1. Автор: Chia-Wei Lin,Teng-Yen Huang. Владелец: Nanya Technology Corp. Дата публикации: 2010-03-18.

Display device with protective anti-glare layers and method for manufacturing the same

Номер патента: US10884165B2. Автор: Huizhong ZHU. Владелец: Beijing BOE Special Display Technology Co Ltd. Дата публикации: 2021-01-05.

Polarizer, display panel, and method for manufacturing display panel

Номер патента: US20210325726A1. Автор: Lingxiao Du,Lingyan CHEN. Владелец: Kunshan Govisionox Optoelectronics Co Ltd. Дата публикации: 2021-10-21.

THIN FILM PHOTOELECTRIC COVERSION MODULE

Номер патента: US20120000505A1. Автор: Chan Chung-Pui,Yeh Hsieh-Hsin. Владелец: Du Pont Apollo Limited. Дата публикации: 2012-01-05.

Semiconductor Device and Method for Manufacturing the Same

Номер патента: US20120001180A1. Автор: Yoshizumi Kensuke,YOKOI Tomokazu. Владелец: . Дата публикации: 2012-01-05.

METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE

Номер патента: US20120001953A1. Автор: Yamazaki Shunpei,Hirakata Yoshiharu. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

METHODS FOR SPUTTERING A RESISTIVE TRANSPARENT BUFFER THIN FILM FOR USE IN CADMIUM TELLURIDE BASED PHOTOVOLTAIC DEVICES

Номер патента: US20120000768A1. Автор: . Владелец: PRIMESTAR SOLAR, INC.. Дата публикации: 2012-01-05.

Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate

Номер патента: US20120001183A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2012-01-05.

LAMINATE OPTICAL BODY, OPTICAL FILM, LIQUID CRYSTAL DISPLAY APPARATUS USING SAID OPTICAL FILM, AND METHOD FOR PRODUCING LAMINATE OPTICAL BODY

Номер патента: US20120003400A1. Автор: Takeda Kentarou,Kitagawa Takeharu,Nishimura Akinori,Inagaki Junichi,Yaginuma Hironori,YOSHIMI Hiroyuki,Kinoshita Ryoji. Владелец: NITTO DENKO CORPORATION. Дата публикации: 2012-01-05.

Method for manufacturing thin film capacitor and thin film capacitor obtained by the same

Номер патента: US20120001298A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

METHOD FOR PRODUCING METAL THIN FILM

Номер патента: US20120000382A1. Автор: . Владелец: SONY CORPORATION. Дата публикации: 2012-01-05.

INSULATING LAYER, ORGANIC THIN FILM TRANSISTOR USING THE INSULATING LAYER, AND METHOD OF FABRICATING THE ORGANIC THIN FILM TRANSISTOR

Номер патента: US20120001159A1. Автор: KANG Seung Youl,Baek Kyu Ha,Yoon Sung Min,Suh Kyung Soo,KIM Gi Heon,YOU In Kyu,AHN Seong Deok. Владелец: Electronics and Telecommunications Research Institute. Дата публикации: 2012-01-05.

THIN-FILM TRANSISTOR ARRAY AND IMAGE DISPLAY DEVICE IN WHICH THIN-FILM TRANSISTOR ARRAY IS USED

Номер патента: US20120001189A1. Автор: Matsubara Ryohei,ISHIZAKI Mamoru. Владелец: TOPPAN PRINTING CO., LTD.. Дата публикации: 2012-01-05.

LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME

Номер патента: US20120002142A1. Автор: Fujiwara Sayuri,Satoh Eiji,Asaoka Yasushi,Deguchi Kazuhiro,Tanimoto Kazunori,MATSUDA TAKAFUMI,MIKUMO KATSUHIRO. Владелец: SHARP KABUSHIKI KAISHA. Дата публикации: 2012-01-05.

STROBO THIN FILM CHEMICAL ANALYSIS APPARATUS AND ASSAY METHOD USING THE SAME

Номер патента: US20120003659A1. Автор: Yoo Jae Chern. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

METHOD FOR FORMING SEMICONDUCTOR REGION AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE

Номер патента: US20120003807A1. Автор: SHIMAZU Takashi,FURUNO Makoto. Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

Method for producing printhead interconnection structure incorporating thin-film resistor

Номер патента: RU2263998C2. Автор: В.А. Хрусталев,М.И. Лукасевич,А.Н. Еременко,М.И. Клычников,Д.Г. Кравченко,С.В. Нефедьев. Владелец: Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон". Дата публикации: 2005-11-10.

Method for producing thin film resistor

Номер патента: RU2583952C1. Автор: Илья Николаевич Малышев,Сергей Валерьевич Симаков,Александр Борисович Колосов. Владелец: Открытое акционерное общество "Научно-производственное объединение "ЭРКОН" (ОАО "НПО "ЭРКОН"). Дата публикации: 2016-05-10.

INTEGRATED THIN FILM SOLAR CELL INTERCONNECTION

Номер патента: US20120000502A1. Автор: Wiedeman Scott,Britt Jeffrey S.,Rhodes Zulima,Sheehan Eric. Владелец: Global Solar Energy, Inc.. Дата публикации: 2012-01-05.

Method for building vesicourethral anastomosis

Номер патента: RU2252718C1. Автор: В.И. Чиссов,ков В.А. Пол,В.А. Поляков,С.В. Быстров,И.Г. Русаков,Б.Я. Алексеев,Н.В. Воробьев. Владелец: Московский научно-исследовательский онкологический институт им. П.А. Герцена МЗ России. Дата публикации: 2005-05-27.

Method for the determination of physical parameters of thin films, preferably photoresist films, via the measurement of their waveguiding parameters

Номер патента: HU9904541D0. Автор: András Hámori. Владелец: . Дата публикации: 2000-02-28.

Method for the determination of physical parameters of thin films, preferably photoresist films, via the measurement of their waveguiding parameters

Номер патента: HU224773B1. Автор: András Hámori. Владелец: MTA MUESZAKI FIZ ES ANYAGTUDOM. Дата публикации: 2006-02-28.

METHOD FOR PRODUCING HIGH-ORDER AND LOW-ORDER THIN-FILM RESISTORS ON ONE SUBSTRATE

Номер патента: RU2010111034A. Автор: Иван Александрович Корж,Иван Александрович Корж (RU). Владелец: Федеральное государственное унитарное предприятие Омский научно-исследовательский институт приборостроения (ФГУП ОНИИП) (RU). Дата публикации: 2011-10-10.

Electrostatic adhesion tester for thin film conductors

Номер патента: WO1998044334A9. Автор: . Владелец: . Дата публикации: 1999-03-11.

Manufacturing method for anti-bacteria substrate with silver oxide thin film on surface

Номер патента: TW200640798A. Автор: zhao-ming Su. Владелец: Chinese United Semiconductor Equipment Mfg Inc. Дата публикации: 2006-12-01.

Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions

Номер патента: TW434875B. Автор: Min Zhu,Kai Shao,Shao-Fu Sauforu Chu. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2001-05-16.

SPUTTERING TARGET OF MULTI-COMPONENT SINGLE BODY AND METHOD FOR PREPARATION THEREOF, AND METHOD FOR PRODUCING MULTI-COMPONENT ALLOY-BASED NANOSTRUCTURED THIN FILMS USING SAME

Номер патента: US20120247948A1. Автор: Shin Seung Yong,Moon Kyoung II,Sun Ju Hyun,Lee Chang Hun,Bae Jung Chan. Владелец: . Дата публикации: 2012-10-04.

A self-supporting polymer thin film and a method for producing the same, and a method for releasing a self-supporting polymer precursor thin film, a closed container made of the self-supporting polymer thin film, and an encapsulant.

Номер патента: JP7078974B2. Автор: 淳 松井,康平 松永. Владелец: Yamagata University NUC. Дата публикации: 2022-06-01.

Thin-film heat sensor having waveguide input for measuring power of pulsed microwave radiation

Номер патента: RU2447453C1. Автор: Александр Сергеевич Сигов,Анатолий Александрович Иванов,Виктор Васильевич Денискин,Анатолий Алексеевич Шиляев,Виктор Николаевич Емохонов,Анастасия Анатольевна Шиляева,Лидия Федоровна Фомина,Алексей Николаевич Целебровский,Александр Леонидович Ушаков,Сергей Сергеевич Вербицкий,Юрий Алексеевич Матвеенко,Анатолий Алексеевич Шиляев (RU),Виктор Николаевич Емохонов (RU),Алексей Николаевич Целебровский (RU),Александр Сергеевич Сигов (RU),Анастасия Анатольевна Шиляева (RU),Лидия Федоровна Фомина (RU),Александр Леонидович Ушаков (RU),Виктор Васильевич Денискин (RU),Сергей Сергеевич Вербицкий (RU),Юрий Алексеевич Матвеенко (RU),Анатолий Александрович Иванов (RU). Владелец: Учреждение Российской академии наук Институт энергетических проблем химической физики РАН. Дата публикации: 2012-04-10.

Method for measuring film thickness of multi-layer thin film, and method and device for manufacturing optical information recording medium

Номер патента: JPH10253324A. Автор: Nobuo Akahira,Eiji Ono,Tetsuya Akiyama,鋭二 大野,信夫 赤平,哲也 秋山. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 1998-09-25.

Method of manufacture of high-temperature thin-film resistor

Номер патента: RU2326460C1. Автор: Игорь Валерь нович Волохов,Игорь Валерьянович Волохов,Евгений Владимирович Песков,Дмитрий Валентинович Попченков. Владелец: ФГУП "НИИ физических измерений". Дата публикации: 2008-06-10.

Method for producing indium gallium zinc oxide semiconductor thin film by using sol-gel method

Номер патента: CN102768945A. Автор: 张群,浦海峰. Владелец: FUDAN UNIVERSITY. Дата публикации: 2012-11-07.

METHOD FOR METERING GRANULAR SOURCE MATERIAL IN A THIN FILM VAPOR DEPOSITION APPARATUS

Номер патента: US20120052202A1. Автор: . Владелец: PRIMESTAR SOLAR, INC.. Дата публикации: 2012-03-01.

Method for Use in Making Electronic Devices Having Thin-Film Magnetic Components

Номер патента: US20120225499A1. Автор: Nozieres Jean Pierre,Reid Jason. Владелец: CROCUS TECHNOLOGIES. Дата публикации: 2012-09-06.

MANUFACTURING METHOD FOR DISPLAY DEVICE HAVING A PLURALITY OF THIN FILM TRANSISTORS AND DISPLAY DEVICE FORMED THEREBY

Номер патента: US20130069070A1. Автор: Ko Moo-Soon. Владелец: Samsung Mobile Display Co., Ltd.. Дата публикации: 2013-03-21.

Method for preparing porous polymer piezo-electric electret thin film

Номер патента: CN100435371C. Автор: 张晓青,夏钟福. Владелец: TONGJI UNIVERSITY. Дата публикации: 2008-11-19.

Method for flattening backing of wind-uproll in thin film production

Номер патента: CN101596984B. Автор: 张月恒,张玉安. Владелец: Tianjin Lucky Bopet Co Ltd. Дата публикации: 2011-01-05.

Hydro-thermal prepares large scale, the method for orthogonal unsymmetric structure platelike molybdenumdisulfide nano thin-film

Номер патента: CN104961353B. Автор: 张龙,王俊,张晓艳. Владелец: Shanghai Institute of Optics and Fine Mechanics of CAS. Дата публикации: 2018-01-12.

Device and method for measuring damage threshold value of optical thin film irradiated by dual-wavelength laser simultaneously

Номер патента: CN101806657A. Автор: 周明,邵建达,赵元安,李大伟,范正修. Владелец: Shanghai Institute of Optics and Fine Mechanics of CAS. Дата публикации: 2010-08-18.

Preparation method for heat-resisting and high-transparence polyimide thin film

Номер патента: CN103755987A. Автор: 朱浩,朱艾成,刘发喜,庄永兵. Владелец: Jiangsu Bingcheng Electrical Material Co Ltd. Дата публикации: 2014-04-30.

Method for forming Pb-based perovskite metal oxide thin film

Номер патента: JP4042276B2. Автор: 信幸 曽山,一誠 牧,悟史 藤田. Владелец: Mitsubishi Materials Corp. Дата публикации: 2008-02-06.

Sol-gel technology prepares the method for manganese, nickel co-doped bismuth ferrite thin film

Номер патента: CN103145192B. Автор: 李锦�,简基康,吴�荣,孙言飞,刘开通,闫灯周. Владелец: Xinjiang University. Дата публикации: 2016-04-27.

Magnetic material slurry, method for producing the magnetic material slurry, magnetic thin film, and magnetic body

Номер патента: JP5102154B2. Автор: 浩太郎 冨田,慎一 大越,和之 高見. Владелец: Dowa Electronics Materials Co Ltd. Дата публикации: 2012-12-19.

Preparation method for top-gate self-aligned zinc oxide thin film transistor

Номер патента: CN102437059B. Автор: 王薇,王亮亮,张盛东,王漪,康晋锋,刘晓彦,蔡剑,韩德栋,任奕成. Владелец: PEKING UNIVERSITY. Дата публикации: 2013-12-25.

Method for testing mechanical property and reliability of thin film material of micro-electromechanical system (MEMS) and device thereof

Номер патента: CN101520385A. Автор: 周威,杨富华,杨晋玲. Владелец: Institute of Semiconductors of CAS. Дата публикации: 2009-09-02.

Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby

Номер патента: CA2085289A1. Автор: Hiroshi Inada,Michitomo Iiyama,So Tanaka. Владелец: So Tanaka. Дата публикации: 1993-06-14.

Method for forming T-shaped gate electrode of thin film transistor

Номер патента: KR970052205A. Автор: 김근국. Владелец: 현대전자산업 주식회사. Дата публикации: 1997-07-29.

Method for measuring stress optical coefficient of optical thin film

Номер патента: CN104359600A. Автор: 刘丹丹,杨霄,刘华松,王利栓,姜玉刚,姜承慧,季一勤. Владелец: 8358 Research Institute of 3th Academy of CASC. Дата публикации: 2015-02-18.

Method for forming double-stress-layer silicon nitride thin film

Номер патента: CN102709178A. Автор: 徐强. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2012-10-03.

Method for measuring optical constant of Gel-xCx thin film infrared spectroscopy area

Номер патента: CN104406773B. Автор: 刘丹丹,孙鹏,赵志宏,季勤,刘华松,姜承慧,季一勤. Владелец: 8358 Research Institute of 3th Academy of CASC. Дата публикации: 2017-04-12.

Method for evaluating characteristics of write element of thin film magnetic head

Номер патента: JP4504928B2. Автор: 達也 清水,晃寛 小田,修 仲田. Владелец: SAE Magnetics HK Ltd. Дата публикации: 2010-07-14.

Method for producing zinc oxide-based homologous compound thin film

Номер патента: JP3694737B2. Автор: 裕 安達,肇 羽田,直樹 大橋,剛士 荻野,勲 坂口. Владелец: NATIONAL INSTITUTE FOR MATERIALS SCIENCE. Дата публикации: 2005-09-14.

Method for making electrochemical oriented growth Al2O3 super-thin film substrate

Номер патента: CN101070603A. Автор: 时强,郭建英,施云波,张洪泉,丁喜波,冯桥华. Владелец: Harbin University of Science and Technology. Дата публикации: 2007-11-14.

Preparation method for graphene and metal nanowire composite conductive thin film

Номер патента: CN104867618A. Автор: 徐秀芳,郑逸群. Владелец: JINING LEADER NANO TECHNOLOGY Co Ltd. Дата публикации: 2015-08-26.

Preparation method for fluorine-doped tin oxide transparent conductive thin film

Номер патента: CN104451610A. Автор: 李佳,范晓星,王绩伟,卢雪梅,康大为,谭天亚,徐洪芳. Владелец: Liaoning University. Дата публикации: 2015-03-25.

Method for reducing medium noise of information recording thin-film material by chemical corrosion and uses thereof

Номер патента: CN1277250C. Автор: 周照耀. Владелец: Individual. Дата публикации: 2006-09-27.

Method for synthesizing quantum dot using the metal thin film

Номер патента: KR100488896B1. Автор: 김영호,전형준,정윤,박환필. Владелец: 학교법인 한양학원. Дата публикации: 2005-05-10.

Method for preparing nano crystal iron-germanium particle thin-film magnetic-sensitive material

Номер патента: CN100387751C. Автор: 王健,王雅欣,刘晖,李志青,张德贤. Владелец: Nankai University. Дата публикации: 2008-05-14.

Method for forming double-stress-layer silicon nitride thin film

Номер патента: CN102623407A. Автор: 徐强. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2012-08-01.

Method for producing water-soluble poval air permeable thin film and products thereof

Номер патента: CN100525892C. Автор: 唐岷. Владелец: GRI TECHNOLOGY (JIAXING) MEDICAL ELECTRONIC Co Ltd. Дата публикации: 2009-08-12.

Method for preparing porous polymer piezo-electric electret thin film

Номер патента: CN1845353A. Автор: 张晓青,夏钟福. Владелец: TONGJI UNIVERSITY. Дата публикации: 2006-10-11.

Tris (diisobutyrylmethanate) neodymium and method for producing neodymium-substituted bismuth titanate ferroelectric thin film by chemical vapor deposition using the same

Номер патента: JP4042959B2. Автор: 秀公 門倉,弓恵 奥原. Владелец: Kojundo Kagaku Kenkyusho KK. Дата публикации: 2008-02-06.

Preparation method for carbon nano tube or graphene extra-thin film

Номер патента: CN102173406B. Автор: 刘瑞,丁海燕,王学文,费跃,张珽. Владелец: Suzhou Institute of Nano Tech and Nano Bionics of CAS. Дата публикации: 2013-09-25.

SYSTEMS AND METHODS FOR DEPOSITING MATERIALS ON EITHER SIDE OF A FREESTANDING FILM USING LASER-ASSISTED CHEMICAL VAPOR DEPOSITION (LA-CVD), AND STRUCTURES FORMED USING SAME

Номер патента: US20120248460A1. Автор: . Владелец: . Дата публикации: 2012-10-04.

Method for manufacturing of semiconductor device

Номер патента: RU2368031C1. Автор: Александр Владимирович Петров,Юрий Владимирович Колковский,Виктор Григорьевич Ральченко,Виталий Иванович Конов,Владимир Алексеевич Сидоров,Александр Андреевич Арендаренко,Валентин Николаевич Данилин,Андрей Георгиевич Васильев,Татьяна Александровна Жукова. Владелец: Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар". Дата публикации: 2009-09-20.

ZnO-based thin film for thermoelectric material of thermoelectric conversion element, thermoelectric conversion element using the ZnO-based thin film, and infrared sensor

Номер патента: JP4277506B2. Автор: 幸夫 吉野,一 山田,雅樹 竹内,忠志 野村,久保　　竜一,究 坂野. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 2009-06-10.

THIN-FILM BATTERIES WITH POLYMER AND LIPON ELECTROLYTE LAYERS AND METHOD

Номер патента: US20130071729A1. Автор: KLAASSEN JODY J.. Владелец: CYMBET CORPORATION. Дата публикации: 2013-03-21.

Metal-resin composite dispersion, thermal barrier coating, method for producing metal-containing resin film or infrared reflective film using the same, and method for producing metal-resin composite dispersion

Номер патента: JP6742637B2. Автор: 亀山　敦,敦 亀山. Владелец: KANAGAWA UNIVERSITY. Дата публикации: 2020-08-19.

Method for producing polarizing film, and polarizing film and optical film using the same

Номер патента: JP4198559B2. Автор: 洋一郎 杉野,守正 和田,忠幸 亀山,洋明 水嶋,直樹 塘口. Владелец: Nitto Denko Corp. Дата публикации: 2008-12-17.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.