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3-dimensional integrated circuit structures and circuits

Номер патента: WO2023200691A9
Опубликовано: 07-12-2023
Автор(ы): Eric S. Shapiro, Jean-Luc Erb, Jeffrey A. Dykstra, Kazuhiko Shibata, Kouassi Sebastien Kouassi, Shishir Ray, Simon Edward Willard, Sinan Goktepeli
Принадлежит: pSemi Corporation
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Heterogeneous metal line compositions for advanced integrated circuit structure fabrication

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Integrated circuit electrostatic discharge bus structure and related method

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Integrated Circuit Electrostatic Discharge Bus Structure and Related Method

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Integrated circuit structure with backside power staple

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Integrated circuit structure with backside via rail

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Integrated circuit structure with backside power staple

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Integrated circuit device

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Integrated circuit device

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Integrated circuit device

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Integrated circuit device

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Hybrid bonding technology for stacking integrated circuits

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Semiconductor integrated circuit layout structure

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Integrated circuit structures having recessed channel transistor

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Integrated circuit structures having airgaps for backside signal routing or power delivery

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Integrated circuit structures having vertical keeper or power gate for backside power delivery

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Integrated circuit device and electronic system including same

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Integrated circuit structures having vertical power gate transistor for backside power delivery

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Integrated circuit layout, method, structure, and system

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Fin end plug structures for advanced integrated circuit structure fabrication

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Fin end plug structures for advanced integrated circuit structure fabrication

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Gate-all-around integrated circuit structures having asymmetric source and drain contact structures

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Integrated circuit structures having dielectric anchor and confined epitaxial source or drain structure

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Integrated circuit structures having dielectric anchor and confined epitaxial source or drain structure

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Integrated circuit structures with backside self-aligned conductive source or drain contact

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Substrate-less vertical diode integrated circuit structures

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Integrated circuit structures with backside self-aligned conductive source or drain contact

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Integrated circuit structures having self-aligned uniform grid metal gate and trench contact plug for tub gates

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Integrated circuit structures having self-aligned uniform grid metal gate and trench contact plug for tub gates

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Integrated circuit structures having conductive structures in fin isolation regions

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Integrated circuit structures with full-wrap contact structure

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Integrated circuit structures with backside self-aligned penetrating conductive source or drain contact

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Integrated circuit structures with full-wrap contact structure

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Gate-all-around integrated circuit structures having backside contact with enhanced area relative to epitaxial source

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Integrated circuit structures with backside self-aligned penetrating conductive source or drain contact

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Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up approach

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Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches

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Gate stack for integrated circuit structure and method of forming same

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Fin cut and fin trim isolation for advanced integrated circuit structure fabrication

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Integrated circuit structures having differentiated channel sizing

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Integrated circuit structures including a titanium silicide material

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Integrated circuit structures including a titanium silicide material

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Fabrication of gate-all-around integrated circuit structures having adjacent island structures

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Integrated circuit structure with back-side contact selectivity

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Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

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Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

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Integrated circuit chips, integrated circuit packages including the integrated circuit chips, and display apparatuses including the integrated circuit chips

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Fabrication of gate-all-around integrated circuit structures having pre-spacer-deposition wide cut gates with non-merged spacers

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Integrated circuit structure with niobium-based silicide layer and methods to form same

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Gate-all-around integrated circuit structures having depopulated channel structures

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Gate-all-around integrated circuit structures having asymmetric source and drain contact structures

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Gate-all-around integrated circuit structures having depopulated channel structures

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Gate-all-around integrated circuit structures having asymmetric source and drain contact structures

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Gate-all-around integrated circuit structures having depopulated channel structures

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Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact

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Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

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