Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

Interconnect structures and methods of fabrication

Номер патента: US09412695B1
Опубликовано: 09-08-2016
Автор(ы): Andreas Knorr, Hiroaki Niimi, Ruilong Xie
Принадлежит: Globalfoundries Inc
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Semiconductor devices including backside vias and methods of forming the same

Номер патента: US12040407B2. Автор: Wei-Yang Lee,Chia-Pin Lin,Che-Lun Chang,Yuan-Ching Peng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor Devices Including Backside Vias and Methods of Forming the Same

Номер патента: US20240339542A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Che-Lun Chang,Yuan-Ching Peng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Semiconductor device and method

Номер патента: US11757042B2. Автор: Hou-Yu Chen,Ching-Wei Tsai,Pei-Yu Wang,Cheng-Ting Chung,Yi-Bo Liao,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Source/Drain Contacts and Methods of Forming Same

Номер патента: US20240290852A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-29.

Self-aligned interconnect structures and methods of fabrication

Номер патента: EP4020527A1. Автор: Anand Murthy,Siddharth Chouksey,Jack Kavalieros,Kimin Jun,Willy Rachmady,Ashish Agrawal,Souvik Ghosh,Koustav Ganguly,Jessica TORRES,Mathew METZ,Ryab Keech. Владелец: Intel Corp. Дата публикации: 2022-06-29.

Structure and formation method of semiconductor device with gate stack

Номер патента: US20160049482A1. Автор: Yung-Tsun LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-02-18.

Structure and formation method of damascene structure

Номер патента: US09721836B2. Автор: Chia-Tien Wu,Jye-Yen Cheng,Tai-Yen PENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-01.

Interconnect structures and methods of fabrication thereof

Номер патента: US20230260900A1. Автор: Mei-Yun Wang,Shih-Hsien Huang,Fu-Kai Yang,Chao-Hsun Wang,Sheng-Hsiung Wang,Wang-Jung HSUEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-17.

Semiconductor device interconnects and methods of formation

Номер патента: US12087832B2. Автор: Te-Chih Hsiung,Yuan-Tien Tu,Yi-Ruei JHAN,I-Hung LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Interconnection structure and methods of forming the same

Номер патента: US12094823B2. Автор: Chung-Ju Lee,Chih Wei Lu,Hsi-Wen Tien,Hsin-Chieh Yao,Yu-Teng Dai,Wei-Hao Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Interconnect Structure and Methods Thereof

Номер патента: US20180350738A1. Автор: Yi-Hsiung Lin,Shang-Wen Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-12-06.

Local interconnect structure

Номер патента: US20190096909A1. Автор: Ru-Gun Liu,Chia-Tien Wu,Chih-Ming Lai,Wei-Cheng Lin,Cheng-Chi Chuang,Jiann-Tyng Tzeng,Chih-Liang Chen,Charles Chew-Yuen Young,Lei-Chun Chou,Wei-An Lai,Hui-Ting Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-03-28.

Method for forming an integrated circuit having transistor gates over an interconnection structure

Номер патента: US12062658B2. Автор: Yu-Lien Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Integrated circuit structure and manufacturing method thereof

Номер патента: US20240355820A1. Автор: Yu-Lien Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Middle-Of-Line Interconnect Structure Having Air Gap And Method Of Fabrication Thereof

Номер патента: US20230360966A1. Автор: Jyu-Horng Shieh,Yi-Nien Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-09.

Semiconductor device with multi-layer dielectric and methods of forming the same

Номер патента: US12057398B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Jia-Chuan You,Yu-Ming Lin,Tien-Lu Lin,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Manufacturing method of semiconductor device

Номер патента: US20190378757A1. Автор: Sheng Zhang,Li-Da Huang,Chee-Hau Ng,Chien-Kee Pang,Wei-Hui Gao,Wen-Bo Ding,Wen-Shen Li,Xiaoyuan Zhi. Владелец: United Microelectronics Corp. Дата публикации: 2019-12-12.

Interconnect structure and method of forming the same

Номер патента: US09385080B2. Автор: Chia-Lin Hsu,Yu-Hung Lin,Mei-Hui Fu,Shih-Chi Lin,Hon-Lin Huang,Wei-Jung Lin,You-Hua Chou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-05.

Methods of fabricating semiconductor devices having conductive pad structures with multi-barrier films

Номер патента: US20220238467A1. Автор: Po-Han Wang,Ing-Ju Lee,Cheng-Ming Wu,Chao-Lung Chen,Po-Hsun Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-28.

Interconnect structure and method for manufacturing the interconnect structure

Номер патента: US20220189871A1. Автор: KHADERBAD Mrunal Abhijith,Yu-Yun Peng,Keng-Chu Lin,Fu-Ting Yen,Tsu-Hsiu Perng,Chen-Han Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-06-16.

Interconnect structure and method for manufacturing the interconnect structure

Номер патента: US20230268268A1. Автор: KHADERBAD Mrunal Abhijith,Yu-Yun Peng,Keng-Chu Lin,Fu-Ting Yen,Tsu-Hsiu Perng,Chen-Han Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-24.

Interconnect structure and method for manufacturing the interconnect structure

Номер патента: US11637062B2. Автор: KHADERBAD Mrunal Abhijith,Yu-Yun Peng,Keng-Chu Lin,Fu-Ting Yen,Tsu-Hsiu Perng,Chen-Han Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-25.

Semiconductor device with an interconnect structure and method for forming the same

Номер патента: US09478626B2. Автор: Chih-Hung Lu,Wei-Chin Chen,Chia-Der Chang,Guo-Chiang CHI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-25.

Semiconductor interconnect structure and manufacturing method thereof

Номер патента: US20170025360A1. Автор: Po-Wen Chiu,Chao-Hui Yeh,Zheng-Yong Liang. Владелец: National Tsing Hua University NTHU. Дата публикации: 2017-01-26.

Low via resistance interconnect structure

Номер патента: WO2023136914A1. Автор: John Jianhong ZHU,Giridhar Nallapati,Junjing Bao. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2023-07-20.

Semiconductor structure and fabrication method thereof

Номер патента: US11908906B2. Автор: HAO Zhang,Tiantian Zhang,Hailong Yu,Xuezhen JING,Jinhui MENG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-02-20.

Methods of fabricating a semiconductor device having a via structure and an interconnection structure

Номер патента: US09905458B2. Автор: Seongho Park,Yongkong SIEW. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-02-27.

Interconnection structures for semiconductor devices and methods of fabricating the same

Номер патента: US09941206B2. Автор: Minsung Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-10.

Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant

Номер патента: US09530738B2. Автор: Byung Tai Do,Linda Pei Ee CHUA,Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-12-27.

Reliable packaging and interconnect structures

Номер патента: US09711401B2. Автор: Belgacem Haba,Cyprian Emeka Uzoh,Craig Mitchell. Владелец: Tessera LLC. Дата публикации: 2017-07-18.

Storage device, semiconductor structure and method for forming same

Номер патента: US12100654B2. Автор: Hsin-Pin Huang,Juanjuan HE. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-24.

Interconnection structure with confinement layer

Номер патента: US09673132B2. Автор: Wen-Chih Chiou,Yung-Chi Lin,Tsang-Jiuh Wu,Hsiao Yun Lo,Yang-Chih Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-06.

Interconnection structure, semiconductor package and method of manufacturing the same

Номер патента: US20200294929A1. Автор: Wen-Long Lu. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2020-09-17.

Semiconductor device including interconnection structure including mxene and method of manufacturing the same

Номер патента: US20230123138A1. Автор: Won Tae KOO,Jae Hyun Han. Владелец: SK hynix Inc. Дата публикации: 2023-04-20.

Semiconductor interconnect structure with TaN and method of forming the same

Номер патента: KR100465761B1. Автор: 김병희,최길현,최경인. Владелец: 삼성전자주식회사. Дата публикации: 2005-01-13.

Semiconductor interconnection structure with TaN and method of forming the same

Номер патента: US20050136652A1. Автор: Byung-hee Kim,Gil-heyun Choi,Kyung-In Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-06-23.

Semiconductor interconnection structure with TaN and method of forming the same

Номер патента: US20030230812A1. Автор: Byung-hee Kim,Gil-heyun Choi,Kyung-In Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2003-12-18.

Structure and formation method of semiconductor device with metal gate stack

Номер патента: US20210119012A1. Автор: Li-Te Lin,Chansyun David Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-22.

Semiconductor structure and manufacturing method for the same

Номер патента: US20150364564A1. Автор: Erh-Kun Lai. Владелец: Macronix International Co Ltd. Дата публикации: 2015-12-17.

Semiconductor device and method of fabricating the same

Номер патента: US20170092771A1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-30.

Semiconductor device and method of fabricating the same

Номер патента: US09608126B1. Автор: Chun-Yuan Wu,Chia-Fu Hsu,Zhibiao Zhou,Qinggang Xing,Xu Yang Shen. Владелец: United Microelectronics Corp. Дата публикации: 2017-03-28.

Structure and formation method of semiconductor device with metal gate stack

Номер патента: US20200343362A1. Автор: Xusheng Wu,Chang-Miao Liu,Huiling Shang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-10-29.

Structure and Formation Method of Semiconductor Device with Gate Stack

Номер патента: US20210028296A1. Автор: Che-Cheng Chang,Yi-Jen Chen,Sheng-Chi Shih. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-01-28.

Manufacture method, high k dielectric structure and its manufacture method of semiconductor devices

Номер патента: CN107316809A. Автор: 黄晨,刘继文,陈光鑫,陈庆育,巫勇贤,许一如,黄一晨,许如. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-03.

Interconnect structure and methods of forming the same

Номер патента: US20240282629A1. Автор: Chih-Yuan Ting,I-Chang Lee,Yu-An Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Heat dissipation for semiconductor devices and methods of manufacture

Номер патента: US20240266285A1. Автор: Yee-Chia Yeo,Huicheng Chang,Jyh-Cherng Sheu,Chen-Fong Tsai,Cheng-I Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Integrated circuit structure and method for forming the same

Номер патента: US12094930B2. Автор: Tze-Liang Lee,Su-Jen Sung,Guan-Yao TU,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Methods of forming reduced resistance local interconnect structures and the resulting devices

Номер патента: US09553028B2. Автор: Ruilong Xie,Ryan Ryoung-Han Kim. Владелец: Globalfoundries Inc. Дата публикации: 2017-01-24.

Semiconductor feature and method for manufacturing the same

Номер патента: US20220359269A1. Автор: Harry-Hak-Lay Chuang,Wei-Cheng Wu,Chung-Jen Huang,Wen-Tuo Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Semiconductor feature and method for manufacturing the same

Номер патента: US11764103B2. Автор: Harry-Hak-Lay Chuang,Wei-Cheng Wu,Chung-Jen Huang,Wen-Tuo Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

Semiconductor feature and method for manufacturing the same

Номер патента: US12107001B2. Автор: Harry-Hak-Lay Chuang,Wei-Cheng Wu,Chung-Jen Huang,Wen-Tuo Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-01.

Semiconductor feature and method for manufacturing the same

Номер патента: US20240371681A1. Автор: Harry-Hak-Lay Chuang,Wei-Cheng Wu,Chung-Jen Huang,Wen-Tuo Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Transistor with shield structure, packaged device, and method of manufacture

Номер патента: US09653410B1. Автор: Hernan Rueda,Ibrahim Khalil,David Burdeaux,Damon Holmes,Partha Chakraborty. Владелец: NXP USA Inc. Дата публикации: 2017-05-16.

Method of fabricating semiconductor device having contact structures

Номер патента: US09543202B2. Автор: Youngseok Kim,Jamin KOO,Kongsoo Lee,Goeun BAE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-10.

Backside connection structures for nanostructures and methods of forming the same

Номер патента: US12100656B2. Автор: Chih-Hao Wang,Chia-Hao Chang,Cheng-Chi Chuang,Li-Zhen YU,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-24.

Semiconductor device structure and methods of forming the same

Номер патента: US12132000B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Semiconductor device structure and methods of forming the same

Номер патента: US20240379560A1. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Interconnect structures and fabrication method thereof

Номер патента: US09978646B2. Автор: Yunchu Yu,Yihua Shen. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-22.

Field effect transistor devices having interconnect structures and manufacturing method thereof

Номер патента: US09627316B1. Автор: Che-Cheng Chang,Chih-Han Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-18.

Copper interconnection structure and method for forming copper interconnections

Номер патента: US20120003390A1. Автор: Akihiro Shibatomi,Junichi Koike. Владелец: Advanced Interconnect Materials LLC. Дата публикации: 2012-01-05.

Self aligned gratings for tight pitch interconnects and methods of fabrication

Номер патента: US20210074632A1. Автор: Gurpreet Singh,Noriyuki Sato,Charles Wallace,David Shykind,Manish Chandhok,Eungnak Han,Leonard GULER,Paul Nyhus,Gobind Bisht,Jonathan Laib,Jinnie Aloysius. Владелец: Intel Corp. Дата публикации: 2021-03-11.

Stacked semiconductor device and method

Номер патента: US12057446B2. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Min-Feng KAO,Hsing-Chih LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Stacked semiconductor device and method

Номер патента: US20240355815A1. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Min-Feng KAO,Hsing-Chih LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Self aligned gratings for tight pitch interconnects and methods of fabrication

Номер патента: US12131991B2. Автор: Gurpreet Singh,Noriyuki Sato,Charles Wallace,David Shykind,Manish Chandhok,Eungnak Han,Leonard GULER,Paul Nyhus,Gobind Bisht,Jonathan Laib,Jinnie Aloysius. Владелец: Intel Corp. Дата публикации: 2024-10-29.

Semiconductor structure and manufacturing method thereof

Номер патента: US12046659B2. Автор: Su Xing,PURAKH Raj Verma. Владелец: United Microelectronics Corp. Дата публикации: 2024-07-23.

Structure and formation method of dual damascene structure

Номер патента: US20200294849A1. Автор: Jyu-Horng Shieh,Tai-Yen PENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-09-17.

Self-aligned gate edge and local interconnect and method to fabricate same

Номер патента: US09831306B2. Автор: Tahir Ghani,Mark Bohr,Szuya S. LIAO,Milton Clair Webb. Владелец: Intel Corp. Дата публикации: 2017-11-28.

Self-aligned gate edge and local interconnect and method to fabricate same

Номер патента: MY182653A. Автор: Tahir Ghani,Mark Bohr,Milton Clair Webb,Szuya S LIAO. Владелец: Intel Corp. Дата публикации: 2021-01-27.

Apparatus and method for low contact resistance carbon nanotube interconnect

Номер патента: US20130334689A1. Автор: Hsien-Chang Wu,Shau-Lin Shue,Hsiang-Huan Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-12-19.

Graded layer for use in semiconductor circuits and method for making same

Номер патента: US20010033027A1. Автор: Salman Akram,Scott Meikle. Владелец: Individual. Дата публикации: 2001-10-25.

Three-dimensional source contact structure and fabrication process method of making the same

Номер патента: US20240096981A1. Автор: Bing-Yue Tsui,Jui-Cheng Wang,Li-Tien Hsueh,Jui-Tse Hsiao. Владелец: National Yang Ming Chiao Tung University NYCU. Дата публикации: 2024-03-21.

Field effect transistor with channel core modified for a backgate bias and method of fabrication

Номер патента: US20160027872A1. Автор: Tomohiro Hirai,Toshiharu Nagumo. Владелец: Renesas Electronics Corp. Дата публикации: 2016-01-28.

Interconnect Structures and Methods and Apparatuses for Forming the Same

Номер патента: US20230317459A1. Автор: Chun-Sheng Chen,Huei-Wen Hsieh,Yu-Cheng Hsiao,Chun-Hsu YANG,Nai-Hao YANG,Kuan-Chia Chen,Che-Wei Tien. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

Interconnection structure, semiconductor device, and method of manufacturing the same

Номер патента: US09524903B2. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2016-12-20.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: EP4235775A2. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-08-30.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: EP3876265A1. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2021-09-08.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: US20240279051A1. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2024-08-22.

Structure comprising tunable anti-reflective coating and method of forming thereof

Номер патента: WO2005053011A1. Автор: Dorel Ioan Toma,Jeffrey T. Wetzel,David C. Wang,Eric M. Lee. Владелец: TOKYO ELECTRON LIMITED. Дата публикации: 2005-06-09.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: EP3876265B1. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-07-12.

Implanted conductor and methods of making

Номер патента: US6017829A. Автор: Paul A. Farrar. Владелец: Micron Technology Inc. Дата публикации: 2000-01-25.

Structure and formation method of semiconductor device with conductive bumps

Номер патента: US11854964B2. Автор: Ming-Da Cheng,Po-Hao Tsai,Wei-Hung Lin,Hui-min Huang,Yung-Sheng Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-26.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: EP4235775A3. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2023-11-08.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: US11987493B2. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2024-05-21.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: EP3876265A4. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2022-08-24.

Damascene interconnect structure, actuator device, and method of manufacturing damascene interconnect structure

Номер патента: US20210387852A1. Автор: Nao Inoue,Katsumi Shibayama,Daiki Suzuki. Владелец: Hamamatsu Photonics KK. Дата публикации: 2021-12-16.

The interconnection structure and its manufacture method of a kind of integrated CNT and Graphene

Номер патента: CN106847790A. Автор: 李斌,严伟,李国元,周长见. Владелец: South China University of Technology SCUT. Дата публикации: 2017-06-13.

Method of manufacturing semiconductor structure including a planarization and semiconductor structure thereof

Номер патента: US20240347379A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

Method of manufacturing semiconductor structure including a planarization and semiconductor structure thereof

Номер патента: US20240347378A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

Method of manufacturing semiconductor structure including nitrogen treatment and semiconductor structure thereof

Номер патента: US20240347448A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

Structure and formation method of semiconductor device with embedded capacitor

Номер патента: US20160064385A1. Автор: Chun-Sheng Wu,Chun-Li Lin,Yung-Tsun LIU,Yi-Fang LI,Geng-Shuoh Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-03-03.

Method of manufacturing semiconductor structure including nitrogen treatment

Номер патента: US20240347449A1. Автор: Ying-Cheng Chuang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

Structure and formation method of semiconductor device with magnetic element

Номер патента: US20200075448A1. Автор: Chen-Shien Chen,Hon-Lin Huang,Chin-Yu Ku,Wei-Li Huang,Chih-Hung Su,Kuang-Yi Wu,Chi-Cheng Chen,Chun-Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-03-05.

Structure and formation method of chip package with fan-out feature

Номер патента: US11784091B2. Автор: Cheng-Lin Huang,Jung-Hua Chang,Ling-Wei Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-10.

Strained silicon on insulator structure and the fabrication method of the same

Номер патента: KR100601976B1. Автор: 박영수,선우문욱,타카시노구치. Владелец: 삼성전자주식회사. Дата публикации: 2006-07-18.

Semiconductor memory device and method of fabricating the same

Номер патента: US20210035910A1. Автор: Jiyoung Kim,Byungjin LEE,Woosung YANG,Jungsok LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-04.

Interconnect structure and electronic device employing the same

Номер патента: US20200035602A1. Автор: Changhyun KIM,Hyeonjin Shin,Kyung-Eun Byun,Keunwook SHIN,Changseok Lee,Seunggeol NAM,Yeonchoo CHO,Eunkyu Lee,Alum Jung,Hyunjae SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-30.

A nand flash memory array having a pillar structure and a fabricating method of the same

Номер патента: KR100777016B1. Автор: 박병국,조성재. Владелец: 재단법인서울대학교산학협력재단. Дата публикации: 2007-11-16.

Single diffusion break structure and cuts later method of making

Номер патента: US09543298B1. Автор: Min-Hwa Chi,Hui Zang,Jerome Ciavatti. Владелец: Globalfoundries Inc. Дата публикации: 2017-01-10.

Three-dimensional source contact structure and fabrication process method of making the same

Номер патента: US20240096982A1. Автор: Bing-Yue Tsui,Jui-Cheng Wang,Li-Tien Hsueh,Jui-Tse Hsiao. Владелец: National Yang Ming Chiao Tung University NYCU. Дата публикации: 2024-03-21.

Semiconductor structure and formation method thereof

Номер патента: US20240203877A1. Автор: BO Su,Hailong Yu. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-06-20.

Copper interconnection structure, semiconductor device, and method for forming copper interconnection structure

Номер патента: US20090243112A1. Автор: Akihiro Shibatomi,Junichi Koike. Владелец: Advanced Interconnect Materials LLC. Дата публикации: 2009-10-01.

Die and manufacturing method therefor, and chip packaging structure and manufacturing method therefor

Номер патента: US20230268299A1. Автор: Weiyuan Yang. Владелец: SIPLP Microelectronics Chongqing Ltd. Дата публикации: 2023-08-24.

Semiconductor device and method of fabricating 3D package with short cycle time and high yield

Номер патента: US09941207B2. Автор: Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-04-10.

Interconnect arrangement with stress-reducing structure and method of fabricating the same

Номер патента: US09472508B2. Автор: Yi-Ruei Lin,Yen-Ming Peng,Han-Wei Yang,Chen-Chung Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-18.

Interconnect structure and method of fabricating same

Номер патента: US09768136B2. Автор: Chung-Shi Liu,Wen-Hsiung LU,Ming-Da Cheng,Wei-Yu Chen,Hsuan-Ting Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-19.

Peripheral circuitry under array memory device and method of fabricating thereof

Номер патента: US20230371261A1. Автор: Chung-Te Lin,Sheng-Chih Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Peripheral circuitry under array memory device and method of fabricating thereof

Номер патента: US12137566B2. Автор: Chung-Te Lin,Sheng-Chih Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-05.

Package structure and method of fabricating the same

Номер патента: US20200020633A1. Автор: Jung-Hua Chang,Chin-Fu Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-16.

Metal-insulator-metal capacitor and methods of fabrication

Номер патента: US09818689B1. Автор: Min-Hwa Chi,Hui Zang. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-14.

Interconnects for stacked non-volatile memory device and method

Номер патента: US20120112155A1. Автор: Scott Brad Herner. Владелец: Crossbar Inc. Дата публикации: 2012-05-10.

Inverted damascene interconnect structures

Номер патента: US09984919B1. Автор: Peng Xu,Xunyuan Zhang,Yongan Xu,Chanro Park,Yann Mignot. Владелец: Globalfoundries Inc. Дата публикации: 2018-05-29.

Interconnection structure and method of manufacturing the same, and electronic device including the interconnection structure

Номер патента: US12027457B2. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-07-02.

Interconnection structure and method of manufacturing the same, and electronic device including the interconnection structure

Номер патента: US20240347445A1. Автор: Huilong Zhu. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2024-10-17.

Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof

Номер патента: US20240194525A1. Автор: Yu-Jen Chang,Hua Feng Chen,Kuo-Hua Pan,Min-Yann Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-13.

Semiconductor devices comprising interconnect structures and methods of fabrication

Номер патента: US20150357284A1. Автор: Nishant Sinha,Gurtej S. Sandhu,John A. Smythe. Владелец: Micron Technology Inc. Дата публикации: 2015-12-10.

Three-dimensional semiconductor device and method of fabricating the same

Номер патента: US20160049346A1. Автор: Woojin Cho,Hansoo Kim,Jaehoon Jang,Wonseok Cho,Jae-Joo Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-02-18.

Interconnect structure with capping layer and barrier layer

Номер патента: US09455182B2. Автор: Daniel C. Edelstein,Takeshi Nogami,Son V. Nguyen,Deepika Priyadarshini,Hosadurga K. Shobha. Владелец: International Business Machines Corp. Дата публикации: 2016-09-27.

Metal-insulator-metal structure and methods of fabrication thereof

Номер патента: US20240213305A1. Автор: Yen-Ming Chen,Hui-Chi CHEN,Hsiang-Ku Shen,Dian-Hau Chen,Chih-Fan Huang,Yuan-Yang HSIAO,Tsung-Chieh Hsiao,Hung-Chao Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-27.

Copper interconnect structure with manganese oxide barrier layer

Номер патента: US09947579B2. Автор: Daniel C. Edelstein,Takeshi Nogami,Son V. Nguyen,Deepika Priyadarshini,Hosadurga K. Shobha. Владелец: International Business Machines Corp. Дата публикации: 2018-04-17.

Interconnect structures and methods of forming same

Номер патента: US09935070B2. Автор: Chung-Shi Liu,Hsien-Wei Chen,Wen-Hsiung LU,Ming-Da Cheng,Tsung-Yuan Yu,Hsuan-Ting Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-03.

Interconnect structure with barrier layer

Номер патента: US09601371B2. Автор: Daniel C. Edelstein,Takeshi Nogami,Son V. Nguyen,Deepika Priyadarshini,Hosadurga K. Shobha. Владелец: International Business Machines Corp. Дата публикации: 2017-03-21.

Interconnect structure with improved dielectric line to via electromigration resistant interfacial layer and method of fabricating same

Номер патента: EP2356677A1. Автор: Veeraraghavan Basker,Chih-Chao Yang,Keith Kwong Hon Wong,William Robert Tonti. Владелец: International Business Machines Corp. Дата публикации: 2011-08-17.

Semiconductor Packages and Methods of Forming the Same

Номер патента: US20240332176A1. Автор: Ting-Chu Ko,Ching-Yu Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Wafer level package structure and method of forming same

Номер патента: US09870946B2. Автор: Chen-Hua Yu,Chien-Hsun Lee,Mirng-Ji Lii,Kuo-Chung Yee,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-16.

Middle-of-line interconnect structure having air gap and method of fabrication thereof

Номер патента: US12142520B2. Автор: Jyu-Horng Shieh,Yi-Nien Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-12.

Interconnect structure and method of forming the same

Номер патента: US09917048B2. Автор: Chien-Chih Chiu,Ming-Chung Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-13.

Semiconductor devices and methods of manufacture

Номер патента: US12142574B2. Автор: Yao-Te Huang,Jiing-Feng Yang,Yung-Shih Cheng,Hui LEE,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-12.

Interconnection structure and methods of forming the same

Номер патента: US20230268274A1. Автор: Ming-Han Lee,Shau-Lin Shue,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-24.

Interconnection structure and methods of forming the same

Номер патента: US20220359414A1. Автор: Ming-Han Lee,Shau-Lin Shue,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Interconnects for stacked non-volatile memory device and method

Номер патента: US20120273748A1. Автор: Scott Brad Herner. Владелец: Crossbar Inc. Дата публикации: 2012-11-01.

Interconnection structure and methods of forming the same

Номер патента: US12068254B2. Автор: Ming-Han Lee,Shau-Lin Shue,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Interconnects for stacked non-volatile memory device and method

Номер патента: US09659819B2. Автор: Scott Brad Herner. Владелец: Crossbar Inc. Дата публикации: 2017-05-23.

Interconnect structure for package-on-package devices and a method of fabricating

Номер патента: US09922903B2. Автор: Jing-Cheng Lin,Po-Hao Tsai,Jui-Pin Hung,Der-Chyang Yeh,Shuo-Mao Chen,Chiung-Han Yeh,Yi-Jou Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-20.

Interconnect structure and method of forming the same

Номер патента: US09564397B2. Автор: Shau-Lin Shue,Tien-I Bao,Cheng-Hsiung Tsai,Chung-Ju Lee,Hai-Ching Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-07.

Interconnect structure for package-on-package devices and a method of fabricating

Номер патента: US09460987B2. Автор: Jing-Cheng Lin,Po-Hao Tsai,Jui-Pin Hung,Der-Chyang Yeh,Shuo-Mao Chen,Chiung-Han Yeh,Yi-Jou Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-04.

Three dimensional semiconductor device containing composite contact via structures and methods of making the same

Номер патента: US20220246517A1. Автор: Raghuveer S. Makala,Rahul Sharangpani,Ramy Nashed Bassely SAID,Senaka Kanakamedala,Monica TITUS. Владелец: SanDisk Technologies LLC. Дата публикации: 2022-08-04.

Cap structure for interconnect dielectrics and methods of fabrication

Номер патента: WO2022132263A1. Автор: Charles Wallace,Sudipto NASKAR,Shashi Vyas. Владелец: Intel Corporation. Дата публикации: 2022-06-23.

Interconnect Structure and Method of Forming the Same

Номер патента: US20190326156A1. Автор: Minghsing Tsai,Jyu-Horng Shieh,Chih-Yuan Ting,Jeng-Shiou Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-10-24.

Carrier structure and methods of forming the same

Номер патента: US20240282761A1. Автор: Yu-Yun Peng,Keng-Chu Lin,Jyh-Cherng Sheu,Wei-Ting YEH,Zheng Yong Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Semiconductor structure and method of manufacturing the same

Номер патента: US12131992B2. Автор: Jian-Hong Lin,Chun-Wei Chang,Mingni Chang,Ming-Yih Wang,Ming-Hong Hsieh,Hsuan-Ming Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-29.

Interconnect structure and method of forming the same

Номер патента: US09892960B2. Автор: Minghsing Tsai,Jyu-Horng Shieh,Chih-Yuan Ting,Jeng-Shiou Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-02-13.

Interconnect structure having tungsten contact copper wiring

Номер патента: US09761526B2. Автор: Anthony K. Stamper,Baozhen Li. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-12.

Interconnect Structure and Method of Forming the Same

Номер патента: US20160329237A1. Автор: Minghsing Tsai,Jyu-Horng Shieh,Chih-Yuan Ting,Jeng-Shiou Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-10.

Interconnection structure and method for manufacturing the same

Номер патента: US20240347454A1. Автор: Zih-Hong Yang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

Die, memory and method of manufacturing die

Номер патента: US20220375824A1. Автор: ChihCheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-11-24.

Interconnection structure and method for manufacturing the same

Номер патента: US20240347451A1. Автор: Zih-Hong Yang. Владелец: Nanya Technology Corp. Дата публикации: 2024-10-17.

Die, memory and method of manufacturing die

Номер патента: US12119286B2. Автор: ChihCheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-10-15.

Interconnection structure and method for manufacturing the same

Номер патента: US20240194590A1. Автор: Tsu-Chieh AI. Владелец: Nanya Technology Corp. Дата публикации: 2024-06-13.

Graphite-Based Interconnects And Methods Of Fabrication Thereof

Номер патента: US20230275024A1. Автор: Chih-Chien Chi,Shu-Cheng Chin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-31.

Interconnection structure and methods of forming the same

Номер патента: US20240321733A1. Автор: Chia-Pang Kuo,Chi-Feng Lin,Jo-Lin Lan,Ming-Yuan Gao,Chun Hsiang YANG. Владелец: Ltd Taiwan Semiconductor Manufacturing Co. Дата публикации: 2024-09-26.

Interconnect structure and methods of making same

Номер патента: US09576851B2. Автор: Chung-Ju Lee,Tsung-Min Huang,Tsung-Jung Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-21.

Device and method for improving RF performance

Номер патента: US09478463B2. Автор: Qiang Zhou,Herb He Huang,Haiting Li,Hongtao Ge. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-10-25.

Semiconductor device and method for making the same

Номер патента: US20240250062A1. Автор: Heesoo Lee,Changoh Kim,JinHee Jung. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2024-07-25.

Semiconductor structure and method of manufacturing the same

Номер патента: US20240363538A1. Автор: Ming-Han Lee,Meng-Pei Lu,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Self aligned interconnect structures

Номер патента: US09922929B1. Автор: Hoon Kim,Xunyuan Zhang,Roderick A. Augur. Владелец: Globalfoundries Inc. Дата публикации: 2018-03-20.

Interconnect structure and methods of forming the same

Номер патента: US20220406718A1. Автор: Ming-Hsien Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-22.

Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication

Номер патента: US12029043B1. Автор: Sasikanth Manipatruni,Noriyuki Sato,Niloy Mukherjee,Rajeev Kumar Dokania,Amrita MATHURIYA,Tanay GOSAVI,Pratyush Pandey,Somilkumar J. Rathi,Jason Y. Wu. Владелец: Kepler Computing Inc. Дата публикации: 2024-07-02.

Trench capacitors with continuous dielectric layer and methods of fabrication

Номер патента: US12034086B1. Автор: Sasikanth Manipatruni,Noriyuki Sato,Niloy Mukherjee,Rajeev Kumar Dokania,Amrita MATHURIYA,Tanay GOSAVI,Pratyush Pandey,Somilkumar J. Rathi,Jason Y. Wu. Владелец: Kepler Computing Inc. Дата публикации: 2024-07-09.

Manufacturing method of semiconductor structure

Номер патента: US12080629B2. Автор: Ming-Fa Chen,Hsien-Wei Chen,Sen-Bor Jan,Chih-Chia Hu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Three-dimensional semiconductor device including a mold structure providing gap regions and an interconnection structure including a plurality of interconnection patterns formed in the gap regions

Номер патента: US8742466B2. Автор: Woojin Cho,Hansoo Kim,Jaehoon Jang,Wonseok Cho,Jae-Joo Shim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-06-03.

Interconnection structure and method of forming the same

Номер патента: US09780026B2. Автор: Horng-Huei Tseng,Che-Cheng Chang,Chih-Han Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-03.

Interconnect structure having a barrier layer along the sidewall of self-aligned via structures

Номер патента: US12046551B2. Автор: Chieh-Han Wu,Cheng-Hsiung Tsai,Chung-Ju Lee,Chih Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Interconnect structure and methods of forming the same

Номер патента: US20240274539A1. Автор: Yu-Yun Peng,Keng-Chu Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Interconnect structure and methods of forming the same

Номер патента: US20240312901A1. Автор: Hung-Wen Su,Ming-Hsing Tsai,Chun-Chieh Lin,Yen-Chun Lin,Chien Chang,Chih-Wei Chang,Jen-Wei Liu,Cheng-Hui Weng,Harry CHIEN,Chih-Han Tseng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Semiconductor devices including an air gap adjacent to an interconnect structure and methods of forming the same

Номер патента: US20240347380A1. Автор: Anthony Jeremy Villalon. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2024-10-17.

Interconnection structure, semiconductor device with interconnection structure and method for fabricating the same

Номер патента: US20230046051A1. Автор: Jong Su Kim. Владелец: SK hynix Inc. Дата публикации: 2023-02-16.

Methods of fabricating semiconductor devices with blocking layer patterns

Номер патента: US09559002B2. Автор: Eun-ji Kim,Seung-Taek Lee,Yeong-lyeol Park,Sung-Dong Cho,Sin-Woo Kang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-01-31.

Self-aligned via structures and methods

Номер патента: US20240339396A1. Автор: Chieh-Han Wu,Cheng-Hsiung Tsai,Chung-Ju Lee,Chih Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Semiconductor device with interconnect structure having graphene layer and method for preparing the same

Номер патента: US20230268303A1. Автор: Chun-Cheng Liao. Владелец: Nanya Technology Corp. Дата публикации: 2023-08-24.

Interconnect structure and methods of forming the same

Номер патента: US12094764B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Cherng-Shiaw Tsai,Kuang-Wei Yang,Hsiao-Kang Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Back-end-of-line (BEOL) interconnect structure

Номер патента: US09870944B2. Автор: Keng-Chu Lin,Joung-Wei Liou. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-16.

Integrated Circuit Package and Method of Forming Same

Номер патента: US20230253351A1. Автор: Chen-Hua Yu,Chuei-Tang Wang,Wei Ling Chang,Chieh-Yen Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-10.

Semiconductor device structure and methods of forming the same

Номер патента: US12033889B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Hsiaokang CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

Method of Forming an Interconnect Structure Having an Air Gap and Structure Thereof

Номер патента: US20230275025A1. Автор: Hung-Wen Su,Chih-Chien Chi,Szu-Ping Tung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-31.

Semiconductor device structure and methods of forming the same

Номер патента: US20240312835A1. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Hsiaokang CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Bonding structure and method of forming same

Номер патента: US12119318B2. Автор: Jie Chen,Ming-Fa Chen,Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Semiconductor interconnection structure and methods of forming the same

Номер патента: US12068248B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Ting-Ya Lo,Chi-Lin Teng,Hsiaokang CHANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-20.

Method of forming an interconnect structure having an air gap and structure thereof

Номер патента: US09917058B2. Автор: Hung-Wen Su,Chih-Chien Chi,Szu-Ping Tung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-03-13.

Method of forming high density, high shorting margin, and low capacitance interconnects by alternating recessed trenches

Номер патента: US09911694B2. Автор: Christopher J. Jezewski,Jasmeet S. Chawla. Владелец: Intel Corp. Дата публикации: 2018-03-06.

Semiconductor structure and method of forming the same

Номер патента: US09515021B1. Автор: Hung-Lung Hu,Yu-Chih Chen,Chia-Ching Tsai,Szu-Hung Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-06.

Method of forming an interconnect structure having an air gap and structure thereof

Номер патента: US09496169B2. Автор: Hung-Wen Su,Chih-Chien Chi,Szu-Ping Tung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-15.

Packaged semiconductor assemblies and methods for manufacturing such assemblies

Номер патента: US20200243444A1. Автор: Suan Jeung Boon,Yong Poo Chia,Meow Koon Eng. Владелец: Micron Technology Inc. Дата публикации: 2020-07-30.

Packaged semiconductor assemblies and methods for manufacturing such assemblies

Номер патента: US20180158778A1. Автор: Suan Jeung Boon,Yong Poo Chia,Meow Koon Eng. Владелец: Micron Technology Inc. Дата публикации: 2018-06-07.

Semiconductor structure and method of manufacturing the same

Номер патента: US20220216141A1. Автор: Tung-Jiun Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-07.

Packaged semiconductor assemblies and methods for manufacturing such assemblies

Номер патента: US09911696B2. Автор: Suan Jeung Boon,Yong Poo Chia,Meow Koon Eng. Владелец: Micron Technology Inc. Дата публикации: 2018-03-06.

Methods of Forming Interconnect Structures in Semiconductor Fabrication

Номер патента: US20210375756A1. Автор: Ming-Han Lee,Shau-Lin Shue. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Structure and formation method of package with integrated chips

Номер патента: US20240266340A1. Автор: Chih-Hao Wang,Ching-Wei Tsai,Yi-Hsun CHIU,Shang-Wen Chang,Chih-Chao CHOU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Semiconductor device structure and methods of forming the same

Номер патента: US12074060B2. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Packaged semiconductor assemblies and methods for manufacturing such assemblies

Номер патента: US20120241982A1. Автор: Chia Yong Poo,Boon Suan Jeung,Eng Meow Koon. Владелец: Micron Technology Inc. Дата публикации: 2012-09-27.

Interconnect Structure without Barrier Layer on Bottom Surface of Via

Номер патента: US20220262675A1. Автор: Ming-Han Lee,Tz-Jun Kuo,Chien-Hsin Ho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-08-18.

Semiconductor device structure and methods of forming the same

Номер патента: US20240371690A1. Автор: Shau-Lin Shue,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang,Hsiaokang CHANG,Cherng-Shiaw Tsai,Kuang-Wei Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Three-dimensional device with bonded structures including a support die and methods of making the same

Номер патента: US20200286875A1. Автор: Akio Nishida,Zhixin Cui,Mitsuteru Mushiga. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-09-10.

Semiconductor device structure with dielectric liner portions and method for preparing the same

Номер патента: US20240266294A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-08.

Interconnect structure and method for forming the same

Номер патента: US20240290718A1. Автор: Shau-Lin Shue,Hai-Ching Chen,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-29.

Semiconductor device structure with dielectric liner portions and method for preparing the same

Номер патента: US20240266293A1. Автор: Tse-Yao Huang. Владелец: Nanya Technology Corp. Дата публикации: 2024-08-08.

Copper interconnect structure and its formation

Номер патента: US09589894B2. Автор: Takeshi Nogami,Christopher Parks,Daniel Edelstein,Tsong Lin Leo Tai. Владелец: International Business Machines Corp. Дата публикации: 2017-03-07.

Semiconductor device structure and methods of forming the same

Номер патента: US20230275027A1. Автор: Ming-Han Lee,Shau-Lin Shue,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-31.

Interconnect Structure and Related Methods

Номер патента: US20200105667A1. Автор: Christian Witt,Houman Zahedmanesh,Victoria L. Calero diaz del castillo. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-04-02.

Interconnect structure of three-dimensional memory device

Номер патента: US12137567B2. Автор: Zhenyu Lu,Feng Pan,Wenguang Shi,Steve Weiyi Yang,Yongna LI,Lidong SONG. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-11-05.

Interconnect arrangement with stress-reducing structure and method of fabricating the same

Номер патента: US20160118350A1. Автор: Yi-Ruei Lin,Yen-Ming Peng,Han-Wei Yang,Chen-Chung Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-04-28.

Interconnect structure with low capacitance and high thermal conductivity

Номер патента: US12080650B1. Автор: Ming-Han Lee,Hsiao-Kang Chang,Kai-Fang CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Semiconductor device structure and methods of forming the same

Номер патента: US12062612B2. Автор: Ming-Han Lee,Shin-Yi Yang,Shu-Wei LI,Guanyu Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

Semiconductor device structure and methods of forming the same

Номер патента: US20240363534A1. Автор: Ming-Han Lee,Shin-Yi Yang,Shu-Wei LI,Guanyu Luo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Integrated circuit including a first semiconductor wafer and a second semiconductor wafer, semiconductor device including a first semiconductor wafer and a second semiconductor wafer and method of manufacturing same

Номер патента: US12062641B2. Автор: Fong-Yuan Chang,Chin-Chou Liu,Po-Hsiang Huang,Chih-Lin Chen,Hui-Yu Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-13.

System and method for an improved interconnect structure

Номер патента: US09633870B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Radio-frequency device package and method for fabricating the same

Номер патента: US09607894B2. Автор: Ming-Tzong Yang,Tung-Hsing Lee,Wei-Che Huang,Yu-Hua Huang,Cheng-Chou Hung. Владелец: MediaTek Inc. Дата публикации: 2017-03-28.

Interconnection structure and method for fabricating same

Номер патента: US20020142581A1. Автор: Mark Murray,Anthony Stamper,David Horak,William Klaasen,Thomas McDevitt. Владелец: International Business Machines Corp. Дата публикации: 2002-10-03.

Semiconductor Device and Method of Forming Inverted Pyramid Cavity Semiconductor Package

Номер патента: US20170133323A1. Автор: Kok Khoon Ho,Satyamoorthi Chinnusamy. Владелец: Semtech Corp. Дата публикации: 2017-05-11.

Semiconductor device and method of manufacture

Номер патента: US09859258B2. Автор: Hsien-Wei Chen,Wei-Yu Chen,An-Jhih Su,Tien-Chung Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-01-02.

Methods of forming connector pad structures, interconnect structures, and structures thereof

Номер патента: US09570410B1. Автор: Chung-Shi Liu,Hsien-Wei Chen,Hsiu-Jen Lin,Ming-Da Cheng,Wei-Yu Chen,Chia-Lun Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-14.

Interconnect structure and method of fabricating same

Номер патента: US20160284658A1. Автор: Chung-Shi Liu,Wen-Hsiung LU,Ming-Da Cheng,Wei-Yu Chen,Hsuan-Ting Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-29.

Redistribution layer metallic structure and method

Номер патента: US12040293B2. Автор: Yen-Yu Chen,Chih-Wei Lin,Wen-hao Cheng,Chun-Chih Lin,Sheng-Wei YEH,Shih Wei Bih. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor device and method of forming inverted pyramid cavity semiconductor package

Номер патента: US09601461B2. Автор: Kok Khoon Ho,Satyamoorthi Chinnusamy. Владелец: Semtech Corp. Дата публикации: 2017-03-21.

Hybrid via interconnect structure

Номер патента: US12051643B2. Автор: Ming-Han Lee,Shin-Yi Yang,Chin-Lung Chung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Standard cell device and method of forming an interconnect structure for a standard cell device

Номер патента: US20200328109A1. Автор: Juergen Boemmels,Julien Ryckaert. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2020-10-15.

Semiconductor structure and manufacturing method thereof

Номер патента: US11756920B2. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Min-Feng KAO,Hsing-Chih LIN,Zheng-Xun Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Semiconductor structure and method for forming the same

Номер патента: US20240332069A1. Автор: Chien-Han Chen,Chien-Chih Chiu,Da-Wei Lin,Shih-Yu Chang,Y.T. Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Metal interconnect structure and method for fabricating the same

Номер патента: US09875928B2. Автор: Chih-Wei Yang,Yu-Cheng Tung,En-Chiuan Liou. Владелец: United Microelectronics Corp. Дата публикации: 2018-01-23.

Interconnect structures and methods of forming same

Номер патента: US09793212B2. Автор: Ying-Wen Huang,Chih-Hsiang Yao,Yi-Chun Huang,Jye-Yen Cheng,Wen-Chuan Chiang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-17.

Interconnect structure and method of making same

Номер патента: US20090152723A1. Автор: Shom Ponoth,Terry A. Spooner,Ya Ou. Владелец: International Business Machines Corp. Дата публикации: 2009-06-18.

Interconnect structures and methods of fabrication

Номер патента: US11887887B2. Автор: Ramanan Chebiam,Richard Vreeland,Manish Chandhok,Nafees KABIR,Jeffery Bielefeld,Brennen Mueller,Colin Carver,William Brezinski. Владелец: Intel Corp. Дата публикации: 2024-01-30.

Semiconductor device including recessed interconnect structure

Номер патента: US12033935B2. Автор: Cheng-Chi Chuang,Yi-Hsun CHIU,Guo-Huei Wu,Hui-Zhong ZHUANG,Chih-Liang Chen,Shang-Wen Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-09.

Semiconductor device including recessed interconnect structure

Номер патента: US20240222269A1. Автор: Cheng-Chi Chuang,Yi-Hsun CHIU,Guo-Huei Wu,Hui-Zhong ZHUANG,Chih-Liang Chen,Shang-Wen Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-04.

Semiconductor Device and Method of Forming Hybrid Substrate with Uniform Thickness

Номер патента: US20240071885A1. Автор: Linda Pei Ee CHUA,Yaojian Lin,Jian Zuo,Hin Hwa Goh. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2024-02-29.

Two 2D capping layers on interconnect conductive structure to increase interconnect structure reliability

Номер патента: US12051645B2. Автор: Ming-Han Lee,Shin-Yi Yang,Yu-Chen Chan,Shu-Wei LI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Interconnection structure and methods of forming the same

Номер патента: US11756884B2. Автор: Chung-Ju Lee,Chih Wei Lu,Hsi-Wen Tien,Hsin-Chieh Yao,Yu-Teng Dai,Wei-Hao Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP

Номер патента: US09768155B2. Автор: KANG Chen,Yaojian Lin,Seung Wook Yoon. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-09-19.

Hybrid interconnects and method of forming the same

Номер патента: US09748173B1. Автор: Chih-Chao Yang,Conal E. Murray. Владелец: International Business Machines Corp. Дата публикации: 2017-08-29.

Semiconductor device and method of forming interconnect structure for encapsulated die having pre-applied protective layer

Номер патента: US09559029B2. Автор: Il Kwon Shim,Seng Guan Chow,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-01-31.

3D interconnect structure comprising fine pitch single damascene backside metal redistribution lines combined with through-silicon vias

Номер патента: US09449913B2. Автор: Mark T. Bohr,Kevin J. Lee,Hiten KOTHARI,Andrew W. Yeoh,Christopher M. PELTO,Seshu V. Sattiraju,Hang-Shing MA. Владелец: Intel Corp. Дата публикации: 2016-09-20.

Method for forming semiconductor structure and semiconductor structure

Номер патента: US12062610B2. Автор: ChihCheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-08-13.

Metal interconnect structure and method for fabricating the same

Номер патента: US20200373198A1. Автор: Chih-Sheng Chang,Yi-How Chou,Tzu-Hao Fu,Tsung-Yin HSIEH,Shih-Chun Tsai,Kun-Chen Ho,Yang-Chou Lin. Владелец: United Microelectronics Corp. Дата публикации: 2020-11-26.

Interconnect structure with enhanced corner connection

Номер патента: US20210287988A1. Автор: Chih-Chao Yang,Kangguo Cheng,Ruilong Xie,Christopher J. Waskiewicz. Владелец: International Business Machines Corp. Дата публикации: 2021-09-16.

Metal alloy capping layers for metallic interconnect structures

Номер патента: US09911698B1. Автор: Chih-Chao Yang. Владелец: International Business Machines Corp. Дата публикации: 2018-03-06.

Semiconductor device and method of forming DCALGA package using semiconductor die with micro pillars

Номер патента: US09875988B2. Автор: Kok Khoon Ho,Andrew Pan,Satyamoorthi Chinnusamy,Weng Hing TAN. Владелец: Semtech Corp. Дата публикации: 2018-01-23.

Semiconductor device and method of forming insulating layer disposed over the semiconductor die for stress relief

Номер патента: US09666500B2. Автор: Rui Huang,Xia Feng,KANG Chen,Yu Gu,Il Kwon Shim,Seng Guan Chow,Yaojian Lin,Jianmin Fang,Pandi C. Marimuthu,Hin Hwa Goh. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-05-30.

Method of fabricating a vertically oriented inductor within interconnect structures and capacitor structure thereof

Номер патента: US20150004770A1. Автор: Hsiu-Ying Cho. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-01-01.

Semiconductor die including fuse structure and methods for forming the same

Номер патента: US12107078B2. Автор: Jen-Yuan Chang,Chia-Ping Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-01.

Package-on-package structure and method

Номер патента: US09818729B1. Автор: Chung-Shi Liu,Ching-Hua Hsieh,Ming-Da Cheng,Meng-Tse Chen,Sheng-Hsiang Chiu,Sheng-Feng Weng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-14.

Interconnect structure

Номер патента: US09570389B1. Автор: WEN Liu,Chih-Chao Yang,Baozhen Li,Dinesh A. Badami. Владелец: International Business Machines Corp. Дата публикации: 2017-02-14.

Interconnect structure

Номер патента: US09514981B1. Автор: WEN Liu,Chih-Chao Yang,Baozhen Li,Dinesh A. Badami. Владелец: International Business Machines Corp. Дата публикации: 2016-12-06.

Package structure, semiconductor pacakge and method of fabricating the same

Номер патента: US20200135649A1. Автор: Jung-Hua Chang,Chin-Fu Kao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-04-30.

Interconnect structures with variable dopant levels

Номер патента: US09768065B1. Автор: Erdem Kaltalioglu,Ping-Chuan Wang,Cathryn J. Christiansen,Ronald G. Filippi. Владелец: Globalfoundries Inc. Дата публикации: 2017-09-19.

Stitch-derived via structures and methods of generating the same

Номер патента: US09454631B2. Автор: Stephen E. Greco,Vincent J. McGahay,Rasit O. TOPALOGLU. Владелец: International Business Machines Corp. Дата публикации: 2016-09-27.

Semiconductor structure and forming method therefor

Номер патента: US11967571B2. Автор: Yu-Cheng Tung,Xin You,Yi-Wang JHAN,Xiaopei FANG,Yung-Tai HUANG. Владелец: Fujian Jinhua Integrated Circuit Co Ltd. Дата публикации: 2024-04-23.

Interconnect structures

Номер патента: US12125784B2. Автор: Cyprian Emeka Uzoh,Jeremy Alfred Theil,Gaius Gillman Fountain, Jr.. Владелец: Adeia Semiconductor Bonding Technologies Inc. Дата публикации: 2024-10-22.

Semiconductor device and manufacturing method of semiconductor device

Номер патента: US20240304540A1. Автор: Nam Jae LEE. Владелец: SK hynix Inc. Дата публикации: 2024-09-12.

Transistor structures and fabrication methods thereof

Номер патента: US09647073B2. Автор: Min-Hwa Chi,Xusheng Wu,Jin Ping Liu. Владелец: Globalfoundries Inc. Дата публикации: 2017-05-09.

Semiconductor structure and forming method thereof

Номер патента: US20240222262A1. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Min-Feng KAO,Hsing-Chih LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-04.

Semiconductor structure and fabrication method

Номер патента: US20190273043A1. Автор: Xing Hua SONG. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-09-05.

Interconnect structure and manufacturing method thereof

Номер патента: US20200144175A1. Автор: ZUOPENG He,Ji Guang Zhu. Владелец: Ningbo Semiconductor International Corp. Дата публикации: 2020-05-07.

Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication

Номер патента: US09679990B2. Автор: Mitsuhiro Togo,Shesh Mani Pandey,Edmund Kenneth Banghart. Владелец: Globalfoundries Inc. Дата публикации: 2017-06-13.

Self-aligned airgap interconnect structures

Номер патента: US09490202B2. Автор: Qinghuang Lin,Cyril Cabral,Benjamin L. Fletcher. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-08.

Interconnect structure and electronic apparatus including the same

Номер патента: US20210125929A1. Автор: Hyeonjin Shin,Changseok Lee,Minhyun LEE,Hyeonsuk Shin,Seokmo Hong. Владелец: UNIST Academy Industry Research Corp. Дата публикации: 2021-04-29.

Barrier-free interconnect structure and manufacturing method thereof

Номер патента: US20240332169A1. Автор: Pei-Yu Wang,Cheng-Ting Chung,Wei Ju Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Radio-frequency device package and method for fabricating the same

Номер патента: US20140070346A1. Автор: Ming-Tzong Yang,Tung-Hsing Lee,Wei-Che Huang,Yu-Hua Huang,Cheng-Chou Hung. Владелец: MediaTek Inc. Дата публикации: 2014-03-13.

Semiconductor structure and forming method thereof

Номер патента: US12080596B2. Автор: JISONG Jin,Abraham Yoo. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-09-03.

Selective deposition for integrated circuit interconnect structures

Номер патента: US20240258166A1. Автор: Shau-Lin Shue,Hai-Ching Chen,Shao-Kuan Lee,Cheng-Chin Lee,Hsin-Yen Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-01.

Interconnection structure

Номер патента: US09761528B2. Автор: ZHONGSHAN Hong. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-09-12.

Electrical interconnection structure and fabrication method thereof

Номер патента: US09490210B2. Автор: ZHONGSHAN Hong. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2016-11-08.

Radio-frequency device package and method for fabricating the same

Номер патента: US09425098B2. Автор: Ming-Tzong Yang,Tung-Hsing Lee,Wei-Che Huang,Yu-Hua Huang,Cheng-Chou Hung. Владелец: MediaTek Inc. Дата публикации: 2016-08-23.

Vias for cobalt-based interconnects and methods of fabrication thereof

Номер патента: US11908735B2. Автор: Yu-Jen Chang,Hua Feng Chen,Kuo-Hua Pan,Min-Yann Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-20.

Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof

Номер патента: US20190067093A1. Автор: Yu-Jen Chang,Hua Feng Chen,Kuo-Hua Pan,Min-Yann Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-02-28.

Semiconductor structure and method for manufacturing semiconductor structure

Номер патента: US20240063260A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-02-22.

INTERCONNECTION STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20150091186A1. Автор: YANG Ki Hong. Владелец: SK hynix, Inc.. Дата публикации: 2015-04-02.

Semiconductor structure and formation method thereof

Номер патента: US20210280583A1. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-09-09.

Structure and formation method of fin-like field effect transistor

Номер патента: US12087643B2. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu-Kai LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-10.

Structure and formation method of fin-like field effect transistor

Номер патента: US20240363439A1. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu-Kai LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Structure and formation method of fin-like field effect transistor

Номер патента: US09502538B2. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu-Kai LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-22.

Structure and formation method of fin-like field effect transistor

Номер патента: US09490365B2. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu-Kai LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-08.

Structure and formation method of fin-like field effect transistor

Номер патента: US09490346B2. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu-Kai LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-11-08.

Semiconductor structure and fabrication method thereof

Номер патента: US11908865B2. Автор: Zhen Tian,Da Huang,Yao QI DONG,Xiaowan DAI. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-02-20.

Structure and formation method of fin-like field effect transistor

Номер патента: US20200266110A1. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu kai Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-08-20.

Structure and formation method of fin-like field effect transistor

Номер патента: US20230253262A9. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu-Kai LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-10.

Semiconductor structure and manufacturing method thereof

Номер патента: US20210202739A1. Автор: Kuang-Chu Chen,Peng-Chan HSIAO,Han-YING LIU,Ching-San Wang. Владелец: Nuvoton Technology Corp. Дата публикации: 2021-07-01.

Structure and formation method of fin-like field effect transistor

Номер патента: US20170076994A1. Автор: Chi-Cherng Jeng,Shiu-Ko Jangjian,Tzu-Kai LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-16.

Structure and Formation Method of Semiconductor Device with Fin Structures

Номер патента: US20210375697A1. Автор: Hsing-Hui Hsu,Po-Nien Chen,Yi-Hsuan CHUNG,Bo-Shiuan Shie,Chih-Yung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Structure and formation method of semiconductor device with fin structures

Номер патента: US11942375B2. Автор: Hsing-Hui Hsu,Po-Nien Chen,Yi-Hsuan CHUNG,Bo-Shiuan Shie,Chih-Yung Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-03-26.

Semiconductor structure and forming method of semiconductor structure

Номер патента: US20220037329A1. Автор: Yachao Xu. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-02-03.

Structure and formation method of package structure with stacked semiconductor dies

Номер патента: US20200035618A1. Автор: Szu-Wei Lu,Chin-Chuan Chang,Yi-Chao Mao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-30.

STRUCTURE AND A MANUFACTURING METHOD OF A MOSFET WITH AN ELEMENT OF IVA GROUP ION IMPLANTATION

Номер патента: US20200035810A1. Автор: Wang Sheng-Hong,Huang Chih-Fang,JIANG Jheng-Yi,HUNG Jia-Qing. Владелец: . Дата публикации: 2020-01-30.

Semiconductor structure and manufacturing method of the same

Номер патента: US09455270B1. Автор: Erh-Kun Lai. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-27.

Semiconductor device and methods of forming the same

Номер патента: US11769716B2. Автор: Wen-Hsiung LU,Ming-Da Cheng,Chin-Yu Ku,Cheng-Lung Yang,Yung-Sheng Lin,Fu Wei Liu,Tang-Wei Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-26.

Semiconductor package structure and method for forming the same

Номер патента: US09543232B2. Автор: Ming-Tzong Yang,Tung-Hsing Lee,Tzu-Hung Lin,Wei-Che Huang,Yu-Hua Huang,Cheng-Chou Hung. Владелец: MediaTek Inc. Дата публикации: 2017-01-10.

Semiconductor package structure and method for forming the same

Номер патента: US09899261B2. Автор: Ming-Tzong Yang,Tung-Hsing Lee,Tzu-Hung Lin,Wei-Che Huang,Yu-Hua Huang,Cheng-Chou Hung. Владелец: MediaTek Inc. Дата публикации: 2018-02-20.

Hybrid Copper Interconnect Structure and Method of Fabricating Same

Номер патента: US20130026635A1. Автор: Shom Ponoth,Chih-Chao Yang,David V. Horak,Charles W. Koburger, III. Владелец: International Business Machines Corp. Дата публикации: 2013-01-31.

Patternable dielectric film structure with improved lithography and method of fabricating same

Номер патента: US09484248B2. Автор: Qinghuang Lin,Deborah A. Neumayer. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-01.

Interconnect structure and method of manufacturing the same

Номер патента: US09807867B2. Автор: Chien-Hsun Lee,Fu-Lung Hsueh,Chewn-Pu Jou,Jiun-Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-31.

Methods of fabricating a semiconductor device

Номер патента: US09793158B2. Автор: Yong Kong Siew,Hyunsu KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-17.

Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same

Номер патента: US09431295B2. Автор: Qinghuang Lin. Владелец: Globalfoundries Inc. Дата публикации: 2016-08-30.

Method of manufacturing barrier-metal-free metal interconnect structure, and barrier-metal-free metal interconnect structure

Номер патента: US20230230878A1. Автор: Takeshi Iizumi,Shinro Ota,Ryota Koshino. Владелец: Ebara Corp. Дата публикации: 2023-07-20.

Fabrication method of interconnect structure

Номер патента: US09754799B2. Автор: HAIYANG Zhang,Chenglong Zhang. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-09-05.

Interconnect Structures with Liner Repair Layers and Methods for Forming Such Interconnection Structures

Номер патента: US20080122090A1. Автор: Chih-Chao Yang,Louis Lu-Chen Hsu,Jack Allan Mandelman,William Robert Tonti. Владелец: International Business Machines Corp. Дата публикации: 2008-05-29.

Semiconductor device and method of forming stepped interconnect layer for stacked semiconductor die

Номер патента: US09824975B2. Автор: Byung Tai Do,Linda Pei Ee CHUA,Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-11-21.

Semiconductor interconnect structure having a graphene-based barrier metal layer

Номер патента: US09324635B2. Автор: Junjing Bao,Xuesong Li,Shaoning Yao,Samuel S. S. Choi. Владелец: International Business Machines Corp. Дата публикации: 2016-04-26.

Interconnect structures comprising capping layers with low dielectric constants and methods of making the same

Номер патента: SG192319A1. Автор: Bonilla Griselda,Grunow Stephan,Yun Wang,Chao-Kun Hu,a clevenger Lawrence,Zhiguo Sun,Yiheng XU,Hyeok-Sang Oh,Tien Cheng,A Quon Roger,Wei-Tsui Tseng. Владелец: Globalfoundries Sg Pte Ltd. Дата публикации: 2013-08-30.

Memory device and method of manufacturing the same

Номер патента: US20230143211A1. Автор: Chih-Jen Huang,Chao-Yang Chen. Владелец: Memorist Co Ltd. Дата публикации: 2023-05-11.

Flip-chip stacking structures and methods for forming the same

Номер патента: US20220254755A1. Автор: Peng Chen,Meng Wang,Baohua Zhang,XinRu Zeng,Houde Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2022-08-11.

Ferroelectric structure lining conductive interconnect structure

Номер патента: US20240274532A1. Автор: Yu-Sheng Chen,Kuo-Ching Huang,Yi Ching Ong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Interconnect structure comprising fine pitch backside metal redistribution lines combined with vias

Номер патента: US09716066B2. Автор: Kevin J. Lee,Jiho KANG,Hsiao-Kang Chang,James Y. Jeong,Adwait TELANG,John Muirhead,Puneesh Puri,Nitin M. Patel. Владелец: Intel Corp. Дата публикации: 2017-07-25.

Memory device and method of fabricating the same

Номер патента: US20230061128A1. Автор: Chin-Cheng Yang. Владелец: Macronix International Co Ltd. Дата публикации: 2023-03-02.

Semiconductor Device and Method of Forming Shielding Layer Over Semiconductor Die Mounted to TSV Interposer

Номер патента: US20120299165A1. Автор: Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2012-11-29.

Semiconductor device and method of forming shielding layer over semiconductor die mounted to TSV interposer

Номер патента: US09685403B2. Автор: Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-06-20.

Packages with interposers and methods for forming the same

Номер патента: US09984981B2. Автор: Chen-Hua Yu,Shin-puu Jeng,Shang-Yun Hou,Wei-Cheng Wu,Ping-Kang Huang,Sao-Ling Chiu,Kuo-Ching Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-29.

Packages with interposers and methods for forming the same

Номер патента: US09633869B2. Автор: Chen-Hua Yu,Shin-puu Jeng,Shang-Yun Hou,Wei-Cheng Wu,Ping-Kang Huang,Sao-Ling Chiu,Kuo-Ching Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-25.

Copper interconnection, method for forming copper interconnection structure, and semiconductor device

Номер патента: US20120295438A1. Автор: Akihiro Shibatomi,Junichi Koike. Владелец: Advanced Interconnect Materials LLC. Дата публикации: 2012-11-22.

Method of fabricating a semiconductor chip having strength adjustment pattern in bonding layer

Номер патента: US20230369285A1. Автор: Yao-Te Huang,Jiing-Feng Yang,Yung-Shih Cheng,Hui LEE,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Method of fabricating a semiconductor chip having strength adjustment pattern in bonding layer

Номер патента: US11756924B2. Автор: Yao-Te Huang,Jiing-Feng Yang,Yung-Shih Cheng,Hui LEE,Hong-Wei Chan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-12.

Non-volatile memory device and method for manufacturing the same

Номер патента: US20220165884A1. Автор: Bo-An Tsai,Shiangshiou Yen. Владелец: Powerchip Semiconductor Manufacturing Corp. Дата публикации: 2022-05-26.

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Номер патента: US20200294928A1. Автор: Yonghoon Kim,Changhyun KIM,Hyeonjin Shin,Kyung-Eun Byun,Keunwook SHIN,Changseok Lee,Yeonchoo CHO,Hyunjae SONG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-09-17.

Semiconductor device structures and printed circuit boards comprising semiconductor devices

Номер патента: US20130228922A1. Автор: Mark E. Tuttle. Владелец: Micron Technology Inc. Дата публикации: 2013-09-05.

Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication

Номер патента: US11844225B1. Автор: Sasikanth Manipatruni,Noriyuki Sato,Niloy Mukherjee,Rajeev Kumar Dokania,Amrita MATHURIYA,Tanay GOSAVI,Mauricio Manfrini,Somilkumar J. Rathi. Владелец: Kepler Computing Inc. Дата публикации: 2023-12-12.

Methods of fabricating the same die stack structure and semiconductor structure

Номер патента: US12119328B2. Автор: Ming-Fa Chen,Sung-Feng Yeh,Chao-Wen Shih,Min-Chien Hsiao,Tzuan-Horng LIU,Nien-Fang Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Methods of fabricating package structure

Номер патента: US20240297151A1. Автор: Ming-Fa Chen,Sung-Feng Yeh,Chao-Wen Shih,Min-Chien Hsiao,Tzuan-Horng LIU,Nien-Fang Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-05.

Package structure and method of forming the same

Номер патента: US20140131887A1. Автор: Chia-Yen Lee,Hsin-Chang Tsai,Peng-Hsin Lee. Владелец: Delta Electronics Inc. Дата публикации: 2014-05-15.

Semiconductor device and method of forming athin wafer without a carrier

Номер патента: SG183779A1. Автор: Pandi Chelvam Marimuthu,Shuangwu Huang,Nathapong Suthiwongsunthorn. Владелец: Stats Chippac Ltd. Дата публикации: 2012-09-27.

Method of manufacturing package system

Номер патента: US09570324B2. Автор: Chen-Hua Yu,Shin-puu Jeng,Shang-Yun Hou,Wei-Cheng Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-02-14.

Through-silicon-via structure and method for preparing same, through-silicon-via interconnection structure and method for preparing same, and electronic device

Номер патента: US20230197572A1. Автор: Xiaowei Li,Weiwen Zheng,Dengfeng Li,Wenlong Zhang,Kanglin Xiong,Kunliang BU,Jiagui FENG. Владелец: Tencent Technology Shenzhen Co Ltd. Дата публикации: 2023-06-22.

Semiconductor device and method of forming a thin wafer without a carrier

Номер патента: US09842775B2. Автор: Pandi C. Marimuthu,Shuangwu Huang,Nathapong Suthiwongsunthorn. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-12-12.

Semiconductor device and method of forming a thin wafer without a carrier

Номер патента: US09443762B2. Автор: Pandi C. Marimuthu,Shuangwu Huang,Nathapong Suthiwongsunthorn. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-09-13.

Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask

Номер патента: US09899286B2. Автор: Rajendra D. Pendse. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-02-20.

Stackable fully molded semiconductor structure with through silicon via (TSV) vertical interconnects and method of making the same

Номер патента: US12057373B2. Автор: Craig Bishop,Clifford Sandstrom,Timothy L. Olson,Robin Davis. Владелец: Deca Technologies USA Inc. Дата публикации: 2024-08-06.

Die Stacking Structure and Method Forming Same

Номер патента: US20240274590A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Hung-Yi Kuo,Ming Hung TSENG,Tsung-Yuan Yu,Cheng-chieh Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Semiconductor device and method of confining conductive bump material with solder mask patch

Номер патента: US09679811B2. Автор: Rajendra D. Pendse. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-06-13.

Backside Source/Drain Contacts and Methods of Forming the Same

Номер патента: US20240379781A1. Автор: Yee-Chia Yeo,Kuan-Lun Cheng,Wei-Yang Lee,Chien-I Kuo,Li-Li Su,Ching-Wei Tsai,Yu-Xuan Huang,Wei Hao Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices

Номер патента: US8110485B2. Автор: SUNG Wook Jung,Kyung Soo Jang,Jae Hyun Cho,Byoung Deog Choi,Jun Sin Yi. Владелец: Sungkyunkwan University Foundation For Corporate Collaboration. Дата публикации: 2012-02-07.

Polycrystalline Si thin film structure and fabrication method thereof and method of fabricating TFT using the same

Номер патента: US20050263774A1. Автор: Jang-yeon Kwon,Do-Young Kim,Takashi Noguchi,Hans Cho. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2005-12-01.

Semiconductor packages and methods of packaging semiconductor devices

Номер патента: US09786625B2. Автор: Yongbo Yang,Antonio Jr. Bambalan Dimaano,Chun Hong WO. Владелец: United Test and Assembly Center Ltd. Дата публикации: 2017-10-10.

Die stack structure, semiconductor structure and method of fabricating the same

Номер патента: US12015013B2. Автор: Ming-Fa Chen,Sung-Feng Yeh,Chao-Wen Shih,Min-Chien Hsiao,Tzuan-Horng LIU,Nien-Fang Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-18.

Semiconductor structure and method of fabricating the same

Номер патента: US20210375826A1. Автор: Ming-Fa Chen,Sung-Feng Yeh,Chao-Wen Shih,Min-Chien Hsiao,Tzuan-Horng LIU,Nien-Fang Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-12-02.

Semiconductor device package and method of manufacture

Номер патента: US20220068862A1. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-03.

Through via structure and method of fabrication thereof

Номер патента: US20240312840A1. Автор: Dian-Hau Chen,Liang-Wei WANG,Chih-Pin CHIU,Lee-Wen Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Semiconductor structure and manufacturing method of the same

Номер патента: US20150194481A1. Автор: Erh-Kun Lai,Hang-Ting Lue,Guan-Ru Lee,An-Chyi Wei. Владелец: Macronix International Co Ltd. Дата публикации: 2015-07-09.

Semiconductor device and method of manufacturing the same

Номер патента: US20230411512A1. Автор: Masami Sawada,Akihiro Shimomura. Владелец: Renesas Electronics Corp. Дата публикации: 2023-12-21.

Semiconductor Structure With Contact Structure and Manufacturing Method of the Same

Номер патента: US20120104542A1. Автор: Shih-Hung Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2012-05-03.

Semiconductor structure with contact structure and manufacturing method of the same

Номер патента: US8492216B2. Автор: Shih-Hung Chen. Владелец: Macronix International Co Ltd. Дата публикации: 2013-07-23.

Low capacitance interconnect structures and associated systems and methods

Номер патента: US09911653B2. Автор: Jin Lu,Kevin Torek,Hongqi Li,Alex Schrinsky,Thy Tran. Владелец: Micron Technology Inc. Дата публикации: 2018-03-06.

Low capacitance interconnect structures and associated systems and methods

Номер патента: US09613864B2. Автор: Jin Lu,Kevin Torek,Hongqi Li,Alex Schrinsky,Thy Tran. Владелец: Micron Technology Inc. Дата публикации: 2017-04-04.

Graphene interconnect structure, electronic device including graphene interconnect structure, and method of preparing graphene interconnect structure

Номер патента: US20230114933A1. Автор: Changhyun KIM,Kyung-Eun Byun,Keunwook SHIN,Changseok Lee,Baekwon PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-04-13.

Interconnect structures and methods of formation

Номер патента: US09984976B2. Автор: Deenesh Padhi,Yong Cao,Yana Cheng,Xianmin Tang,Srinivas Guggilla,Sree Rangasai KESAPRAGADA. Владелец: Applied Materials Inc. Дата публикации: 2018-05-29.

Semiconductor device and method

Номер патента: US20240379439A1. Автор: Ming-Fa Chen,Chao-Wen Shih,Tzuan-Horng LIU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region

Номер патента: US09620557B2. Автор: Rui Huang,Seng Guan Chow,Lee Sun Lim,Ma Phoo Pwint Hlaing,Xu Sheng Bao. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-04-11.

Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures

Номер патента: EP1352421B1. Автор: Clifford Lee Henderson,Paul Albert Kohl,Sue Ann Bidstrup Allen,Dhananjay M. Bhusari,Hollie Ann Kelleher. Владелец: Georgia Tech Research Institute. Дата публикации: 2009-11-25.

Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures

Номер патента: EP1352421A2. Автор: Clifford Lee Henderson,Paul Albert Kohl,Sue Ann Bidstrup Allen,Dhananjay M. Bhusari,Hollie Anne Reed. Владелец: Georgia Tech Research Institute. Дата публикации: 2003-10-15.

Method of forming carbon layer and method of forming interconnect structure

Номер патента: US20220068633A1. Автор: Hyeonjin Shin,Keunwook SHIN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-03-03.

Methods of forming wire interconnect structures and related wire bonding tools

Номер патента: US12057431B2. Автор: Tomer Levinson,Basil Milton,Romeo Olida,Jonathan Geller. Владелец: Kulicke and Soffa Industries Inc. Дата публикации: 2024-08-06.

Methods of forming wire interconnect structures and related wire bonding tools

Номер патента: US20240363583A1. Автор: Tomer Levinson,Basil Milton,Romeo Olida,Jonathan Geller. Владелец: Kulicke and Soffa Industries Inc. Дата публикации: 2024-10-31.

Interconnect structure and method of fabricating

Номер патента: US8916978B2. Автор: Qinghuang Lin,Ratnam Sooriyakumaran,Dirk Pfeiffer. Владелец: International Business Machines Corp. Дата публикации: 2014-12-23.

Method of manufacturing multilevel interconnects including performing a surface treatment to form a hydrophilic surface layer

Номер патента: US6429115B1. Автор: Ming-Sheng Yang,Chin-Hsiang Lin,Cheng-Yuan Tsai. Владелец: United Microelectronics Corp. Дата публикации: 2002-08-06.

Dual damascene structure and method of making

Номер патента: US20040183199A1. Автор: Jianmin Qiao. Владелец: Cypress Semiconductor Corp. Дата публикации: 2004-09-23.

Interconnect structure having a via with a via gouging feature and dielectric liner sidewalls for beol integration

Номер патента: US20120199976A1. Автор: Chih-Chao Yang,Chao-Kun Hu. Владелец: International Business Machines Corp. Дата публикации: 2012-08-09.

Interconnect structure

Номер патента: US20040056358A1. Автор: ELLIS Lee,Tsing-Fong Hwang. Владелец: Individual. Дата публикации: 2004-03-25.

Method of forming an interconnect structure

Номер патента: US09502288B2. Автор: Son Van Nguyen,Alfred Grill,Hosadurga Shobha,Tuan A. Vo,Thomas J. Haigh, JR.. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-22.

Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication

Номер патента: US11955512B1. Автор: Sasikanth Manipatruni,Noriyuki Sato,Niloy Mukherjee,Rajeev Kumar Dokania,Amrita MATHURIYA,Tanay GOSAVI,Pratyush Pandey,Somilkumar J. Rathi,Jason Y. Wu. Владелец: Kepler Computing Inc. Дата публикации: 2024-04-09.

Stack structure and the manufacturing method of the same

Номер патента: US20170112001A1. Автор: Zhenqing ZHAO,Le Liang. Владелец: Delta Electronics Inc. Дата публикации: 2017-04-20.

The structure and its manufacture method of metal-insulating layer-metal capacitor

Номер патента: CN106847787A. Автор: 洪昌贤. Владелец: Powerchip Technology Corp. Дата публикации: 2017-06-13.

Structure and method to prevent charge damage from e-beam curing process

Номер патента: SG133471A1. Автор: Liu Huang,HSIA Liang Choo,Liu Wuping,ZHANG Bei Chao,John Leonard Sudijono. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2007-07-30.

Semiconductor device and method of testing the same

Номер патента: US20240371709A1. Автор: Wei Wang,Wei-Jen Chang,Chia-Chi Ho,Chung-Shi Chiang,Chang-Hung Yu,Ruei-Jyun Hsu,Hsin-Shan Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

The efficient white light LED epitaxial structure and its growing method of a kind of unstressed configuration powder

Номер патента: CN104900771B. Автор: 徐现刚,张恒,曲爽,王成新,肖成峰. Владелец: Shandong Inspur Huaguang Optoelectronics Co Ltd. Дата публикации: 2017-12-22.

Structure and Device fabrication method of high temperature Epitaxial layer growth on hetero substrate

Номер патента: KR101485908B1. Автор: 정주영,김종희,심규환,조덕호,최철종,길연호. Владелец: 주식회사 시지트로닉스. Дата публикации: 2015-01-26.

Method of making six transistor sram cell using connections between 3d transistor stacks

Номер патента: WO2021137945A1. Автор: H. Jim Fulford,Mark Gardner. Владелец: Tokyo Electron U.S. Holdings, Inc.. Дата публикации: 2021-07-08.

Wafer system-level fan-out packaging structure and manufacturing method

Номер патента: US11894243B2. Автор: Yenheng CHEN,Chengchung LIN. Владелец: SJ Semiconductor Jiangyin Corp. Дата публикации: 2024-02-06.

Alignment structures and methods of forming same

Номер патента: US09646944B2. Автор: Hsien-Wei Chen,Ching-Jung Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-05-09.

Alignment structures and methods of forming same

Номер патента: US09355979B2. Автор: Hsien-Wei Chen,Ching-Jung Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-05-31.

Semiconductor device and method of fabricating 3D package with short cycle time and high yield

Номер патента: US09653445B2. Автор: Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-05-16.

Method of fabricating semiconductor structure

Номер патента: US20240321765A1. Автор: Hao-Yi Tsai,Hsiu-Jen Lin,Hui-Jung TSAI,Hung-Yi Kuo,Cheng-chieh Hsieh,Yen-Liang Lin,Ming-Hung Tseng,Tzu-Sung Huang,Chung-Ming Weng,Chun-Ti LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Structure and formation method of chip package with reinforcing structures

Номер патента: US12040285B2. Автор: Ming-Chih Yew,Shin-puu Jeng,Yu-Sheng Lin,Po-Yao Lin,Po-Chen LAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Fan-out wafer level packages containing embedded ground plane interconnect structures and methods for the fabrication thereof

Номер патента: US09607918B2. Автор: Zhiwei Gong,Weng F. Yap. Владелец: NXP USA Inc. Дата публикации: 2017-03-28.

Semiconductor devices and methods of manufacturing thereof

Номер патента: US12046676B2. Автор: Yu-Lien Huang,Ming-Huan Tsai,Li-Te Lin,Han-Yu Lin,Yi-Shan Chen,Kuan-Da Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Package structure and packaging method of wafer level chip scale package

Номер патента: US20150262843A1. Автор: Chih-Cheng Hsieh,Hsiu-wen Hsu,Chun-Ying Yeh,Chung-Ming Leng. Владелец: Super Group Semiconductor Co Ltd. Дата публикации: 2015-09-17.

Structure and formation method of chip package with through vias

Номер патента: US20210066179A1. Автор: Cheng-Lin Huang,Jung-Hua Chang,Ling-Wei Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-03-04.

Structure and formation method of package with underfill

Номер патента: US11784130B2. Автор: Shin-puu Jeng,Yu-Sheng Lin,Po-Yao Lin,Shu-Shen Yeh,Chin-Hua Wang,Che-Chia Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-10.

Semiconductor packaging emi shielding structure and manufacturing method of the same

Номер патента: US20230420386A1. Автор: Chia Jen Chou. Владелец: Realtek Semiconductor Corp. Дата публикации: 2023-12-28.

Semiconductor structure and manufacturing method of the same

Номер патента: US20130214340A1. Автор: Shih-Hung Chen,Hang-Ting Lue,Yen-Hao Shih. Владелец: Macronix International Co Ltd. Дата публикации: 2013-08-22.

Structure and formation method of package structure with underfill

Номер патента: US20200203186A1. Автор: Shang-Yun Hou,Sung-Hui Huang,Kuan-Yu Huang,Jui-Hsieh LAI. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-06-25.

Structure and formation method of chip package with protective lid

Номер патента: US11764118B2. Автор: Chen-Shien Chen,Wen-Yi Lin,Chien-Chen Li,Kuang-Chun Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

Memory device having word line surrounding gate structure and manufacturing method thereof

Номер патента: US20240023321A1. Автор: Szu-Yao Chang. Владелец: Nanya Technology Corp. Дата публикации: 2024-01-18.

Semiconductor structure and manufacturing method thereof

Номер патента: US20240332201A1. Автор: Su Xing,PURAKH Raj Verma. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-03.

Interconnect structures and methods of forming same

Номер патента: US09589862B2. Автор: Chung-Shi Liu,Hsien-Wei Chen,Wen-Hsiung LU,Ming-Da Cheng,Tsung-Yuan Yu,Hsuan-Ting Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-03-07.

Semiconductor structure and formation method thereof

Номер патента: US11367774B2. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2022-06-21.

Semiconductor structure and formation method thereof

Номер патента: US20210280669A1. Автор: Fei Zhou. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2021-09-09.

INTERCONNECTION STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20160027730A1. Автор: LEE Nam Jae. Владелец: . Дата публикации: 2016-01-28.

Structure and formation method of semiconductor device with embedded capacitor

Номер патента: US09761592B2. Автор: Chun-Sheng Wu,Chun-Li Lin,Yung-Tsun LIU,Yi-Fang LI,Geng-Shuoh Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-12.

Structure and formation method of package structure with capacitor

Номер патента: US20240339369A1. Автор: Wen-Shiang Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Semiconductor structure and method for manufacturing same

Номер патента: EP4350767A1. Автор: Ling-Yi Chuang,Kaimin Lv. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-04-10.

Package structure and method of fabricating the same

Номер патента: US12046561B2. Автор: Tsung-Fu Tsai,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Package structure and method of fabricating the same

Номер патента: US20240339415A1. Автор: Tsung-Fu Tsai,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Structure and formation method of chip package with fan-out feature

Номер патента: US20210118757A1. Автор: Shin-puu Jeng,Yi-Wen WU,Po-Hao Tsai,Po-Yao Chuang,Meng-Liang Lin,Techi WONG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-22.

Structure and formation method of package containing chip structure with inclined sidewalls

Номер патента: US11978722B2. Автор: Shin-puu Jeng,Po-Yao Lin,Po-Chen LAI,Shu-Shen Yeh,Che-Chia Yang,Li-Ling Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-07.

Structure and formation method of package structure with underfill

Номер патента: US20200328185A1. Автор: Tsung-Fu Tsai,Shih-Ting Lin,Szu-Wei Lu,Chen-Hsuan Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-10-15.

Semiconductor Device and Method of Stacking Semiconductor Die on a Fan-Out WLCSP

Номер патента: US20150001709A1. Автор: Xusheng Bao,KwokKeung Szeto. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2015-01-01.

Semiconductor device and method of manufacture

Номер патента: US12057410B2. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Semiconductor Device and Method of Manufacture

Номер патента: US20240355762A1. Автор: Chen-Hua Yu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-24.

Semiconductor device and method of stacking semiconductor die on a fan-out WLCSP

Номер патента: US09478485B2. Автор: Xusheng Bao,KwokKeung Szeto. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-10-25.

Structure and formation method of chip package with protective lid

Номер патента: US11978715B2. Автор: Chih-Kung Huang,Hui-Chang Yu,Wei-Teng Chang,Meng-Tsung KUO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-07.

Semiconductor structure and manufacturing method thereof

Номер патента: US20240030099A1. Автор: Chuei-Tang Wang,Shih-Chang Ku,Chien-Yuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Semiconductor packages including through mold ball connectors and methods of manufacturing the same

Номер патента: US09847322B2. Автор: Jong Hoon Kim,Yeon Seung Jung,Ki Jun SUNG,Hyeong Seok Choi. Владелец: SK hynix Inc. Дата публикации: 2017-12-19.

A kind of fan-out packaging structure and its manufacturing method of Flash chip stacking

Номер патента: CN109585431A. Автор: 孙鹏,倪寿杰. Владелец: National Center for Advanced Packaging Co Ltd. Дата публикации: 2019-04-05.

The laminated packaging structure and lamination encapsulating method of chip

Номер патента: CN105261611B. Автор: 谭小春. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2018-06-26.

The laminated packaging structure and lamination encapsulating method of chip

Номер патента: CN107919345A. Автор: 谭小春. Владелец: Hangzhou Silergy Semiconductor Technology LTD. Дата публикации: 2018-04-17.

The encapsulating structure and its manufacturing method of irregular shape

Номер патента: CN105977223B. Автор: 锺启生,唐和明,张耿端. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-11-27.

RF amplifier module and methods of manufacture thereof

Номер патента: US09509251B2. Автор: Jeffrey K. Jones. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2016-11-29.

Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core

Номер патента: US09640504B2. Автор: Byung Tai Do,Reza A. Pagaila,Shuangwu Huang. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-05-02.

3d integrated circuit (3dic) structure and method for manufacturing the same

Номер патента: US20240258221A1. Автор: Jongkook Kim,Chengtar WU,ChoongBin YIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-01.

Package structure and manufacturing method thereof

Номер патента: US12074131B2. Автор: Jie Chen,Ming-Fa Chen,Hsien-Wei Chen,Sung-Feng Yeh,Sen-Bor Jan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-27.

Package structure and manufacturing method thereof

Номер патента: US20240371815A1. Автор: Jie Chen,Ming-Fa Chen,Hsien-Wei Chen,Sung-Feng Yeh,Sen-Bor Jan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and method of using a standardized carrier to form embedded wafer level chip scale packages

Номер патента: US09721862B2. Автор: Il Kwon Shim,Yaojian Lin,Pandi C. Marimuthu,Byung Joon Han. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-08-01.

Semiconductor device and method of forming embedded wafer level chip scale packages

Номер патента: US09704824B2. Автор: Il Kwon Shim,Yaojian Lin,Pandi C. Marimuthu,Byung Joon Han. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-07-11.

Interconnection structure and semiconductor package including the same

Номер патента: US20240290702A1. Автор: Jin Ho An,Dongjoon Oh,Jumyong Park,Chungsun Lee,Hyunsu Hwang,Junyun Kweon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

Oxidized film structure and method of making epitaxial metal oxide structure

Номер патента: US20020102418A1. Автор: Yong Liang,Shupan Gan. Владелец: Individual. Дата публикации: 2002-08-01.

Oxidized film structure and method of making epitaxial metal oxide structure

Номер патента: WO2002059945A2. Автор: Yong Liang,Shupan Gan. Владелец: BATTELLE MEMORIAL INSTITUTE. Дата публикации: 2002-08-01.

Interconnect structure for a microelectronic device, method of manfacturing same, and microelectronic structure containing same

Номер патента: US20090133908A1. Автор: Kevin J. Lee,Michael D. Goodner. Владелец: Intel Corp. Дата публикации: 2009-05-28.

Interconnection Structure, LED Module and Method

Номер патента: US20170092631A1. Автор: Standing Martin. Владелец: . Дата публикации: 2017-03-30.

Interconnection structure, LED module and method

Номер патента: US10361178B2. Автор: Martin Standing. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2019-07-23.

Chemical mechanical polishing (cmp) slurry, semiconductor structure, and manufacturing method of semiconductor structure

Номер патента: US20230057872A1. Автор: Chang-Yi Tsai. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-02-23.

Semiconductor structure and manufacturing method for the same

Номер патента: US09455155B2. Автор: Erh-Kun Lai. Владелец: Macronix International Co Ltd. Дата публикации: 2016-09-27.

Semiconductor structure and manufacturing method of the same

Номер патента: US20110248282A1. Автор: Huilong Zhu,Haizhou Yin,Zhijiong Luo. Владелец: Institute of Microelectronics of CAS. Дата публикации: 2011-10-13.

Semicondutor structure and manufacturing method thereof

Номер патента: US20240071761A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2024-02-29.

A kind of encapsulating structure and its packaging method of retina Using prosthesis chip

Номер патента: CN108172553A. Автор: 杨佳威,杨旭燕. Владелец: Hagnzhou Warm Caramel Core Electronic Technology Co Ltd. Дата публикации: 2018-06-15.

Package structure and method of fabricating the same

Номер патента: US12080681B2. Автор: Shang-Yun Hou,Wen-Wei Shen,Sung-Hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Method of fabricating package structure

Номер патента: US20240363587A1. Автор: Shang-Yun Hou,Wen-Wei Shen,Sung-Hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor device and method of forming topside and bottom-side interconnect structures around core die with TSV

Номер патента: US09478486B2. Автор: Sun Mi Kim,KyungHoon Lee,OhHan Kim. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-10-25.

Package structure and method of forming the same

Номер патента: US20240371778A1. Автор: Ming-Che Ho,Hung-Jui Kuo,Tzung-Hui Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Package structure and method of fabricating the same

Номер патента: US20220336416A1. Автор: Shang-Yun Hou,Wen-Wei Shen,Sung-Hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-10-20.

Package structure and method of fabricating the same

Номер патента: US20210225806A1. Автор: Shang-Yun Hou,Wen-Wei Shen,Sung-Hui Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-07-22.

Semiconductor Device and Method of Forming Three-Dimensional Vertically Oriented Integrated Capacitors

Номер патента: US20110233726A1. Автор: Rui Huang,Heap Hoe Kuan,Seng Guan Chow,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2011-09-29.

Semiconductor Package Having Semiconductor Die with Internal Vertical Interconnect Structure and Method Therefor

Номер патента: US20120104599A1. Автор: Rui Huang,Byung Tai Do,Heap Hoe Kuan,Linda Pei Ee CHUA,Seng Guan Chow. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2012-05-03.

Semiconductor structure and fabrication method thereof

Номер патента: US12096696B2. Автор: JISONG Jin. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2024-09-17.

Semiconductor structure and manufacturing method thereof

Номер патента: US20240178326A1. Автор: Kai Cheng,Weihua Liu. Владелец: Enkris Semiconductor Wuxi Ltd. Дата публикации: 2024-05-30.

Interposer substrate, package structure and manufacturing method of package structure

Номер патента: US20240071936A1. Автор: Chung-Te Lin,Hsin-Yu Lai,Katherine H Chiang,Chia-Yu Ling. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-29.

Semiconductor device and method of forming build-up interconnect structures over a temporary substrate

Номер патента: US09818734B2. Автор: KANG Chen,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-11-14.

Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structure

Номер патента: US09443829B2. Автор: Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-09-13.

Interposer including a copper edge seal ring structure and methods of forming the same

Номер патента: US12040289B2. Автор: Ching-Wen Hsiao,Chen-Shien Chen,Ming-Da Cheng,Hong-Seng Shue,Yao-Chun Chuang,Yu-Tse Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Interposer including a copper edge seal ring structure and methods of forming the same

Номер патента: US20240332220A1. Автор: Ching-Wen Hsiao,Chen-Shien Chen,Ming-Da Cheng,Hong-Seng Shue,Yao-Chun Chuang,Yu-Tse Su. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Organic interposer including intra-die structural reinforcement structures and methods of forming the same

Номер патента: US12040267B2. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Shu-Shen Yeh,Chia-Kuei Hsu,Li-Ling Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor device and method of forming electromagnetic (EM) shielding for LC circuits

Номер патента: US09754897B2. Автор: Linda Pei Ee CHUA,Il Kwon Shim,Rajendra D. Pendse,Yaojian Lin,Won Kyoung Choi,Pandi C. Marimuthu,Byung Joon Han. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-09-05.

Organic interposer including intra-die structural reinforcement structures and methods of forming the same

Номер патента: US20230223328A1. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Shu-Shen Yeh,Chia-Kuei Hsu,Li-Ling Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-13.

Seal rings structures in semiconductor device interconnect layers and methods of forming the same

Номер патента: US09780046B2. Автор: Han-Ping Pu,Pei-Haw Tsao,Hsin-Yu Pan,Yu-Chen Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-03.

Multi-chip package structure and method of forming same

Номер патента: US09748189B2. Автор: Chen-Hua Yu,Jing-Cheng Lin,Jui-Pin Hung,Der-Chyang Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-29.

Interconnect structures for semiconductor devices and methods of manufacturing the same

Номер патента: US12142532B2. Автор: Yu-Lien Huang,Ching-Feng Fu,Huan-Just Lin,Che-Ming Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-12.

Vertical semiconductor package including horizontally stacked dies and methods of forming the same

Номер патента: US20240371841A1. Автор: Jen-Yuan Chang,Chia-Ping Lai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Semiconductor device and method of forming low profile fan-out package with vertical interconnection units

Номер патента: US09704780B2. Автор: Il Kwon Shim,Yaojian Lin,Won Kyoung Choi,Pandi C. Marimuthu. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-07-11.

Organic interposer including a dual-layer inductor structure and methods of forming the same

Номер патента: US20240379589A1. Автор: Ching-Wen Hsiao,Ming-Da Cheng,Chun-Hung Chen,Hong-Seng Shue,Wei Sen CHANG,Wei-Han Chiang,Ching-Ho Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-14.

Organic interposer including a dual-layer inductor structure and methods of forming the same

Номер патента: US12142582B2. Автор: Hsiao Ching-Wen,Ming-Da Cheng,Chun-Hung Chen,Hong-Seng Shue,Wei Sen CHANG,Wei-Han Chiang,Ching-Ho Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-12.

Semiconductor device and method of forming microelectromechanical systems (MEMS) package

Номер патента: US09527723B2. Автор: KANG Chen,Yaojian Lin,Won Kyoung Choi,Ivan Micallef. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-12-27.

Semiconductor device and method of forming extended semiconductor device with fan-out interconnect structure to reduce complexity of substrate

Номер патента: US09484319B2. Автор: Rajendra D. Pendse. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-11-01.

Integrated circuit structure, and method for forming thereof

Номер патента: US20240274560A1. Автор: Szu-Wei Lu,Hung-Chih Chen,Chin-Chuan Chang,Yi-Chao Mao,Kun-Tong Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Interconnect structures and methods for fabricating interconnect structures

Номер патента: WO2017079394A9. Автор: Rabindra N. Das,William D. Oliver,Andrew J. Kerman,Donna-Ruth W. Yost,Danna Rosenberg,Mark A. Gouker. Владелец: Massachusetts Institute of Technology. Дата публикации: 2017-06-22.

Semiconductor package and method

Номер патента: US12051650B2. Автор: Chen-Hua Yu,Chung-Shi Liu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Integrated circuit structure, and method for forming thereof

Номер патента: US20220302054A1. Автор: Szu-Wei Lu,Hung-Chih Chen,Chin-Chuan Chang,Yi-Chao Mao,Kun-Tong Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-22.

Integrated circuit (IC) with reconstituted die interposer for improved connectivity, and related methods of fabrication

Номер патента: US11769732B2. Автор: Aniket Patil,Jonghae Kim. Владелец: Qualcomm Inc. Дата публикации: 2023-09-26.

Semiconductor Package and Method

Номер патента: US20240339408A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Jiun Yi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Semiconductor device and method of forming openings in thermally-conductive frame of FO-WLCSP to dissipate heat and reduce package height

Номер патента: US09508626B2. Автор: Yaojian Lin,Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-11-29.

Semiconductor device and method of forming PoP semiconductor device with RDL over top package

Номер патента: US09786623B2. Автор: Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-10-10.

Semiconductor device and method of forming TSV semiconductor wafer with embedded semiconductor die

Номер патента: US09754858B2. Автор: Seung Uk Yoon,Yaojian Lin,Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-09-05.

Semiconductor package including test pad and bonding pad structure for die connection and methods for forming the same

Номер патента: US12094844B2. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Semiconductor Device and Method of Forming Interconnect Structure with Graphene Core Shells for 3D Stacking Package

Номер патента: US20240332035A1. Автор: Heesoo Lee,Sujeong KWON,YongMoo SHIN. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2024-10-03.

Semiconductor Package Including Test Pad and Bonding Pad Structure for Die Connection and Methods for Forming the Same

Номер патента: US20240363565A1. Автор: Jen-Yuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Semiconductor packages including through mold ball connectors on elevated pads and methods of manufacturing the same

Номер патента: US09806015B1. Автор: Jong Hoon Kim,Han Jun Bae,Ki Jun SUNG. Владелец: SK hynix Inc. Дата публикации: 2017-10-31.

Semiconductor package and methods of fabricating a semiconductor package

Номер патента: US20240030157A1. Автор: Tsung-Ding Wang,Yu-Min LIANG,Chin-Liang Chen,Hao-Cheng Hou,Jung-Wei CHENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure

Номер патента: US09620455B2. Автор: Yaojian Lin,Reza A. Pagaila,Jun Mo Koo. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-04-11.

Chip package structure including a silicon substrate interposer and methods for forming the same

Номер патента: US20240290703A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Tin-Hao Kuo,Po-Yuan TENG,Kuo-Lung Pan,Yu-Chia Lai,Teng-Yuan Lo,Mao-Yen Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-29.

Semiconductor Device and Method of Forming Encapsulated Wafer Level Chip Scale Package (EWLCSP)

Номер патента: US20200006177A1. Автор: Yaojian Lin,Seung Wook Yoon,Thomas J. Strothmann. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2020-01-02.

Semiconductor Device and Method of Forming Air Gap Adjacent to Stress Sensitive Region of the Die

Номер патента: US20130093068A1. Автор: Reza A. Pagaila. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2013-04-18.

Package with metal-insulator-metal capacitor and method of manufacturing the same

Номер патента: US09960106B2. Автор: Der-Chyang Yeh,Shuo-Mao Chen,Chiung-Han Yeh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-01.

Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP

Номер патента: US09847324B2. Автор: KANG Chen,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-12-19.

Semiconductor device and method of forming fine pitch RDL over semiconductor die in fan-out package

Номер патента: US09721922B2. Автор: Il Kwon Shim,Yaojian Lin,Won Kyoung Choi,Pandi C. Marimuthu. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-08-01.

Semiconductor device and method of forming encapsulated wafer level chip scale package (EWLCSP)

Номер патента: US09704769B2. Автор: Yaojian Lin,Seung Wook Yoon,Thomas J. Strothmann. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-07-11.

Semiconductor Device and Method of Forming Encapsulated Wafer Level Chip Scale Package (EWLCSP)

Номер патента: US20170278765A1. Автор: Yaojian Lin,Seung Wook Yoon,Thomas J. Strothmann. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-09-28.

Semiconductor Device and Method of Forming Protective Coating Material Over Semiconductor Wafer to Reduce Lamination Tape Residue

Номер патента: US20110266656A1. Автор: WonJun Ko,JaEun Yun,HunTeak Lee,SeungYong Chai. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2011-11-03.

Semiconductor device and method of forming vertical interconnect in FO-WLCSP using leadframe disposed between semiconductor die

Номер патента: US09842808B2. Автор: HeeJo Chi,NamJu Cho,HanGil Shin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-12-12.

Semiconductor device, package structure and method of fabricating the same

Номер патента: US20230057113A1. Автор: Ying-Ching Shih,Tsung-Fu Tsai,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-23.

Semiconductor device, package structure and method of fabricating the same

Номер патента: US20240014162A1. Автор: Ying-Ching Shih,Tsung-Fu Tsai,Szu-Wei Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-11.

Semiconductor power device and a method of assembling a semiconductor power device

Номер патента: US20180286814A1. Автор: Jacques Pierre Henri FAVRE,Jean-Michel Francis REYNES,Renaud André LACABANNE. Владелец: Agile Power Switch 3d - Integration Apsi3d. Дата публикации: 2018-10-04.

Fan-Out Package Structure and Method

Номер патента: US20180190578A1. Автор: Sao-Ling Chiu,Tzu-Wei Chiu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-07-05.

Methods of forming conductive and insulating layers

Номер патента: US09865575B2. Автор: HeeJo Chi,HanGil Shin,KyungMoon Kim. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-01-09.

Package structure and method for forming same

Номер патента: US09520385B1. Автор: Hsien-Wei Chen,Kuo-Chuan Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-13.

Semiconductor device and method of wafer level package integration

Номер патента: US09460951B2. Автор: Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-10-04.

Semiconductor Device and Method of Forming Ultra Thin Multi-Die Face-to-Face WLCSP

Номер патента: US20170309572A1. Автор: HeeJo Chi,NamJu Cho,Junwoo Myung. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-10-26.

Semiconductor device and method of forming ultra thin multi-die face-to-face WLCSP

Номер патента: US09735113B2. Автор: HeeJo Chi,NamJu Cho,Junwoo Myung. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-08-15.

Structure and formation method of semiconductor device with conductive bumps

Номер патента: US11990440B2. Автор: Ming-Da Cheng,Wei-Hung Lin,Hui-min Huang,Kai-Jun Zhan,Yung-Sheng Lin,Chang-Jung Hsueh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-21.

Interconnection structure through substrate and method of manufacturing the same, and device package having interconnection structure through substrate and method of manufacturing the same

Номер патента: KR101323894B1. Автор: 박재형,이주용,이승기. Владелец: 단국대학교 산학협력단. Дата публикации: 2013-12-19.

Semiconductor structure and method for manufacturing semiconductor structure

Номер патента: EP4287243A1. Автор: Chih-Wei Chang. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2023-12-06.

Three-dimensional packaging structure and packaging method of power devices

Номер патента: US20190287876A1. Автор: YU Chen,CAI CHEN,Yong Kang,Zhizhao HUANG,Yuxiong LI. Владелец: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY. Дата публикации: 2019-09-19.

There is the circuit block of hollow bulb and attachment structure and the manufacture method of attachment structure

Номер патента: CN106170854A. Автор: 藤本正稔,桥本卓幸,石桥卓也. Владелец: Nagase Chemtex Corp. Дата публикации: 2016-11-30.

Encapsulation includes the encapsulation stacking structure and its manufacture method of the encapsulation

Номер патента: CN107039369A. Автор: 杜茂华. Владелец: Samsung Semiconductor China R&D Co Ltd. Дата публикации: 2017-08-11.

Electrode Structure and Package Forming Method of Semiconductor Integrated Circuit

Номер патента: KR970060464A. Автор: 료헤이 사토,마모루 미타,마사카즈 이시노. Владелец: 가부시키가이샤 히타치세이사쿠쇼. Дата публикации: 1997-08-12.

The encapsulating structure and its manufacture method of pressure sensor

Номер патента: CN105609472B. Автор: 尤文胜. Владелец: Hefei Zuan Investment Partnership Enterprise. Дата публикации: 2018-02-23.

Semiconductor die with interconnect bump design employing repurposed seed layer for forming additional signal paths to back end-of-line (beol) structure, and related integrated circuit (ic) package and fabrication method

Номер патента: EP4406014A1. Автор: Yue Li,Durodami Lisk,Jinying Sun. Владелец: Qualcomm Inc. Дата публикации: 2024-07-31.

Interconnection structure, method of fabricating the same, and semiconductor package including interconnection structure

Номер патента: US20230290718A1. Автор: Dongwoo Kim,Un-Byoung Kang,Chungsun Lee,Ji-Seok HONG,Hyunah KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-14.

Semiconductor apparatus including uncrowned and crowned cells and method of making

Номер патента: US20200050733A1. Автор: Wen-Hao Chen,Meng-Kai Hsu,Yuan-Te Hou,Lee-Chung Lu,Prasenjit Ray. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-02-13.

Method of fabricating semiconductor structure

Номер патента: US12040283B2. Автор: Hao-Yi Tsai,Hsiu-Jen Lin,Hui-Jung TSAI,Hung-Yi Kuo,Cheng-chieh Hsieh,Yen-Liang Lin,Ming-Hung Tseng,Tzu-Sung Huang,Chung-Ming Weng,Chun-Ti LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Semiconductor device and method of forming dual-sided interconnect structures in Fo-WLCSP

Номер патента: US09978654B2. Автор: KANG Chen,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-05-22.

Semiconductor device including structure connecting frontside and backside metal and method of manufacturing the same

Номер патента: US20230402367A1. Автор: Chia-Tien Wu,Wei-Cheng Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-12-14.

Integrated circuit packages and methods

Номер патента: US20240234210A1. Автор: Ching-Hua Hsieh,Chih-Wei Lin,Yen-Hung Chen,Kung-Chen Yeh,Sung-Yueh Wu,Jen-Chun Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Partially-overlapped interconnect structure and method of making

Номер патента: US20020111012A1. Автор: Kenneth Rodbell,Jeffrey Gambino,Evan Colgan. Владелец: International Business Machines Corp. Дата публикации: 2002-08-15.

Seal ring structures and methods of forming same

Номер патента: US20200350302A1. Автор: Kuan-Liang Liu,Wen-De Wang,Yung-Lung Lin,Kuo-Ming Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-11-05.

Seal ring structures and methods of forming same

Номер патента: US20190109125A1. Автор: Kuan-Liang Liu,Wen-De Wang,Yung-Lung Lin,Kuo-Ming Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-04-11.

Optical integrated circuit structure including edge coupling protective features and method of forming same

Номер патента: US20240201458A1. Автор: Hau-yan Lu,Chia-Ping Lai,Chien-Ying WU,YuehYing LEE,Sui-Ying Hsu,Chen-Hao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Seal ring structures and methods of forming same

Номер патента: US20220278090A1. Автор: Kuan-Liang Liu,Wen-De Wang,Yung-Lung Lin,Kuo-Ming Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-01.

Integrated package and method for making the same

Номер патента: US20240105569A1. Автор: ByungHyun Kwak. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2024-03-28.

Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same

Номер патента: US11756877B2. Автор: Hisaya Sakai,Yoshitaka Otsu,Kota Funayama,Kazuto Ohsawa. Владелец: SanDisk Technologies LLC. Дата публикации: 2023-09-12.

Semiconductor device package and method of manufacturing the same

Номер патента: US20220115339A1. Автор: Chih-Cheng LEE,Yu-Lin Shih. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-04-14.

Semiconductor packaging structure and method for forming the same

Номер патента: US09620468B2. Автор: Chang-Ming Lin,Yu-Juan Tao. Владелец: Tongfu Microelectronics Co Ltd. Дата публикации: 2017-04-11.

Manufacturing method of semiconductor structure and semiconductor structure thereof

Номер патента: US20230352351A1. Автор: Ling-Sung Wang,Kun-Ei Chen,Chen-Chieh Chiang,Hsueh-Han Lu,Pei-Lum MA,Kun Da Jhong. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-02.

Semiconductor packages including heat spreaders and methods of manufacturing the same

Номер патента: US09847285B1. Автор: Jong Hoon Kim,Han Jun Bae,Ki Jun SUNG. Владелец: SK hynix Inc. Дата публикации: 2017-12-19.

Stacked via structures and methods for forming the same

Номер патента: US20240145379A1. Автор: Mirng-Ji Lii,Chiang-Jui Chu,Kuo-Chin Chang,Yen-Kun Lai,Cheng-Nan Lin,Ching-Ho Cheng,Wei-Hsiang TU,Chien Hao HSU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-02.

Semiconductor Device with Post-Passivation Interconnect Structure and Method of Forming the Same

Номер патента: US20150228598A1. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-08-13.

Semiconductor device with post-passivation interconnect structure and method of forming the same

Номер патента: US09443812B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii,Tsung-Yuan Yu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-09-13.

Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure

Номер патента: US09524955B2. Автор: Rui Huang,Heap Hoe Kuan,Seng Guan Chow,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-12-20.

Semiconductor structure and method for manufacturing the same

Номер патента: US20240290669A1. Автор: Dohyun Kim,Hyoeun Kim,Sunkyoung Seo,Yeongseon Kim,Juhyeon KIM,JeongOh Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-29.

High density organic interconnect structures

Номер патента: US20240355641A1. Автор: Siddharth K. Alur,Sri Chaitra Jyotsna Chavali,Lilia May,Amanda E. Shuckman. Владелец: Intel Corp. Дата публикации: 2024-10-24.

Method of forming a semiconductor package

Номер патента: US09431367B2. Автор: Jing-Cheng Lin,Jui-Pin Hung,Chin-Chuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-30.

Method for manufacturing semiconductor structure and semiconductor structure thereof

Номер патента: US20230343789A1. Автор: Katherine H. Chiang,Yun-Feng KAO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-26.

Semiconductor die including edge ring structures and methods for making the same

Номер патента: US20210313240A1. Автор: Michimoto Kaminaga,Takahiro Tanamachi,Shuya HATAO,Hidetoshi Nakamoto. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-10-07.

Systems and methods of testing memory devices

Номер патента: US12107022B2. Автор: Chia-En HUANG,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-01.

High density organic interconnect structures

Номер патента: US12062551B2. Автор: Siddharth K. Alur,Sri Chaitra Jyotsna Chavali,Lilia May,Amanda E. Schuckman. Владелец: Intel Corp. Дата публикации: 2024-08-13.

Method of forming a semiconductor package

Номер патента: US09960125B2. Автор: Jing-Cheng Lin,Jui-Pin Hung,Chin-Chuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-01.

3d integrated circuit (3dic) structure and method for manufacturing the same

Номер патента: US20240379635A1. Автор: Jongkook Kim,Chengtar WU,ChoongBin YIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-11-14.

Electrostatic discharge circuit and method of forming the same

Номер патента: US12046567B2. Автор: Kuo-Ji Chen,Jam-Wem Lee,Wun-Jie Lin,Tao-Yi HUNG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-23.

Semiconductor structures and fabrication method thereof, memory device and memory system

Номер патента: US20240355736A1. Автор: Min WEN,Zhen Pan,Chengbao Zhou. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-24.

Wirebond interconnect structures for stacked die packages

Номер патента: MY204170A. Автор: Hann Sir Jiun,Huat Goh Eng,Suet Lim Min. Владелец: Intel Corp. Дата публикации: 2024-08-13.

Semiconductor structures and methods for forming the same

Номер патента: US12033933B2. Автор: Kaimin Lv. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-07-09.

Semiconductor device and method of forming wire bondable fan-out EWLB package

Номер патента: US09472533B2. Автор: Rajendra D. Pendse. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-10-18.

Integrated Circuit Structure and Method

Номер патента: US20230369254A1. Автор: Chen-Hua Yu,Hao-Yi Tsai,Tin-Hao Kuo,Kuo Lung Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Integrated circuit structure and method

Номер патента: US11764171B2. Автор: Chen-Hua Yu,Hao-Yi Tsai,Tin-Hao Kuo,Kuo Lung Pan. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-19.

Interconnect structure and method for on-chip information transfer

Номер патента: US20180151802A1. Автор: Tao Wang,Wei Du,Christian Albertus NIJHUIS. Владелец: NATIONAL UNIVERSITY OF SINGAPORE. Дата публикации: 2018-05-31.

Semiconductor device and method of forming interconnect substrate for FO-WLCSP

Номер патента: US09679863B2. Автор: Xia Feng,KANG Chen,Yaojian Lin,Jianmin Fang. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-06-13.

Semiconductor device and method of forming reduced surface roughness in molded underfill for improved C-SAM inspection

Номер патента: US09460972B2. Автор: KyungHoon Lee,Jaehyun Lee,KiYoun Jang,Seongwon Park. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2016-10-04.

Interconnection structure, method of fabricating the same, and semiconductor package including interconnection structure

Номер патента: US12014977B2. Автор: Dongwoo Kim,Un-Byoung Kang,Chungsun Lee,Ji-Seok HONG,Hyunah KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate

Номер патента: US09847309B2. Автор: Rajendra D. Pendse. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-12-19.

Method of fabricating a post-passivation interconnect structure

Номер патента: US20170338188A1. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-23.

Three-dimensional memory device having a shielding layer and method for forming the same

Номер патента: US11758729B2. Автор: Zhiliang Xia,Jun Chen,Zongliang Huo,Li Hong XIAO. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-09-12.

Three-dimensional (3D) semiconductor devices and methods of fabricating 3D semiconductor devices

Номер патента: US09768193B2. Автор: Youngwoo Park,Jaegoo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

Semiconductor structure and method of fabricating the same

Номер патента: US20210366833A1. Автор: Hao-Yi Tsai,Hsiu-Jen Lin,Hui-Jung TSAI,Hung-Yi Kuo,Cheng-chieh Hsieh,Yen-Liang Lin,Ming-Hung Tseng,Tzu-Sung Huang,Chung-Ming Weng,Chun-Ti LU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-11-25.

Adapter board and method for forming same, packaging method, and package structure

Номер патента: US20230223329A1. Автор: Chen Wei,CAI Qiaoming,Yang Lie Yong,Lu Xiao Yu. Владелец: Semiconductor Manufacturing North China Beijing Corp. Дата публикации: 2023-07-13.

Adapter board and method for forming same, packaging method, and package structure

Номер патента: US20210398892A1. Автор: Chen Wei,CAI Qiaoming,Yang Lie Yong,Lu Xiao Yu. Владелец: Semiconductor Manufacturing North China Beijing Corp. Дата публикации: 2021-12-23.

Adapter board and method for forming same, packaging method, and package structure

Номер патента: US12068233B2. Автор: Chen Wei,CAI Qiaoming,Yang Lie Yong,Lu Xiao Yu. Владелец: Semiconductor Manufacturing North China Beijing Corp. Дата публикации: 2024-08-20.

Interconnect structures

Номер патента: US20240379539A1. Автор: Cyprian Emeka Uzoh,Jeremy Alfred Theil,Gaius Gillman Fountain, Jr.. Владелец: Adeia Semiconductor Bonding Technologies Inc. Дата публикации: 2024-11-14.

Interconnect structure and method of fabrication therefor

Номер патента: WO2001048819A2. Автор: Bob Sankman. Владелец: Intel Corporation. Дата публикации: 2001-07-05.

Semiconductor device packages with exposed heat dissipating surfaces and methods of fabricating the same

Номер патента: WO2023249887A1. Автор: Alexander Komposch,Eng Wah Woo,Kok Meng KAM,Soon Lee Liew. Владелец: Wolfspeed, Inc.. Дата публикации: 2023-12-28.

Methods to prevent filler entrapment in microelectronic device to microelectronic substrate interconnection structures

Номер патента: US20140377916A1. Автор: Rajendra C. DIAS,Manish Dubey,Arjun Krishnan,Purushotham Kaushik Muthur Srinath,Yiqun Bai,Yonghao Xiu. Владелец: Intel Corp. Дата публикации: 2014-12-25.

Methods to prevent filler entrapment in microelectronic device to microelectronic substrate interconnection structures

Номер патента: US20150179479A1. Автор: Rajendra C. DIAS,Manish Dubey,Arjun Krishnan,Yiqun Bai,Yonghao Xiu,Purushothan Kaushik Muthur Srinath. Владелец: Intel Corp. Дата публикации: 2015-06-25.

Package structure and manufacturing method thereof

Номер патента: US20240282713A1. Автор: Yu-Lin Chiang,Ying-Ching Shih,Chen-Hsuan Tsai,Chin-Chuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Semiconductor device packages with exposed heat dissipating surfaces and methods of fabricating the same

Номер патента: US20230421119A1. Автор: Alexander Komposch,Eng Wah Woo,Kok Meng KAM,Soon Lee Liew. Владелец: Wolfspeed Inc. Дата публикации: 2023-12-28.

Fan-out structure and method of fabricating the same

Номер патента: US12020953B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Der-Chyang Yeh,Wei-Yu Chen,An-Jhih Su,Chi-Hsi Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

Semiconductor structure and forming method thereof

Номер патента: US20240222261A1. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Min-Feng KAO,Hsing-Chih LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-04.

Semiconductor Device and Method of Using Partial Wafer Singulation for Improved Wafer Level Embedded System in Package

Номер патента: US20140264817A1. Автор: Daesik Choi,KyungHoon Lee,SangMi Park,KyoungIl Huh. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2014-09-18.

Semiconductor device and method of using partial wafer singulation for improved wafer level embedded system in package

Номер патента: US09799590B2. Автор: Daesik Choi,KyungHoon Lee,SangMi Park,KyoungIl Huh. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-10-24.

Post-passivation interconnect structure

Номер патента: US09613914B2. Автор: Chen-Hua Yu,Hsien-Wei Chen,Hao-Yi Tsai,Mirng-Ji Lii. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-04-04.

Forming interconnect structures utilizing subtractive paterning techniques

Номер патента: US20170278780A1. Автор: Robert A. May. Владелец: Intel Corp. Дата публикации: 2017-09-28.

Chip assemblage, press pack cell and method for operating a press pack cell

Номер патента: US09972596B2. Автор: Olaf Hohlfeld,Juergen Hoegerl. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-05-15.

Forming interconnect structures utilizing subtractive paterning techniques

Номер патента: US09842800B2. Автор: Robert A. May. Владелец: Intel Corp. Дата публикации: 2017-12-12.

Semiconductor device and method of forming trench and disposing semiconductor die over substrate to control outward flow of underfill material

Номер патента: US09627229B2. Автор: Hoang Lan,Wang Zhenliang. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-04-18.

High density organic bridge device and method

Номер патента: US09548264B2. Автор: Mihir K. Roy,Wei-Lun Kane Jen,Stefanie M. Lotz. Владелец: Intel Corp. Дата публикации: 2017-01-17.

Magnetoresistive device and method of fabricating same

Номер патента: US20180248111A1. Автор: Praveen Raghavan,Davide Francesco CROTTI,Raf Appeltans. Владелец: Interuniversitair Microelektronica Centrum vzw IMEC. Дата публикации: 2018-08-30.

Structure and manufacturing method of semiconductor device having uneven surface at memory cell capacitor part

Номер патента: US6608344B2. Автор: Tomohiko Higashino. Владелец: NEC Electronics Corp. Дата публикации: 2003-08-19.

Structure and manufacturing method of semiconductor device having uneven surface at memory cell capacitor part

Номер патента: US6514812B2. Автор: Tomohiko Higashino. Владелец: NEC Corp. Дата публикации: 2003-02-04.

Structure and manufacturing method of semiconductor device having uneven surface at memory cell capacitor part

Номер патента: US20010008789A1. Автор: Tomohiko Higashino. Владелец: NEC Corp. Дата публикации: 2001-07-19.

Structure and manufacturing method of semiconductor device having uneven surface at memory cell capacitor part

Номер патента: US20020038881A1. Автор: Tomohiko Higashino. Владелец: Individual. Дата публикации: 2002-04-04.

Pixel structure and repairing method thereof

Номер патента: US7829895B2. Автор: Yuan-Hsin Tsou. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2010-11-09.

Pixel structure and repairing method thereof

Номер патента: US20080067518A1. Автор: Yuan-Hsin Tsou. Владелец: Chunghwa Picture Tubes Ltd. Дата публикации: 2008-03-20.

Glass packaging structure and glass packaging method of utilizing the same

Номер патента: US09966559B2. Автор: Yawei Liu. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-05-08.

Semiconductor stack structure and manufacturing method thereof

Номер патента: US12125824B2. Автор: Chuei-Tang Wang,Shih-Chang Ku,Chien-Yuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-22.

Semiconductor stack structure and manufacturing method thereof

Номер патента: US20240371828A1. Автор: Chuei-Tang Wang,Shih-Chang Ku,Chien-Yuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Carrier and chip package structure, and the manufacturing method of the same

Номер патента: TW564529B. Автор: Ming-Shiang Jeng. Владелец: Advanced Semiconductor Eng. Дата публикации: 2003-12-01.

Display panel, splicing screen, display device, and method for manufacturing display panel

Номер патента: US20240170494A1. Автор: Yongping Fan. Владелец: TCL China Star Optoelectronics Technology Co Ltd. Дата публикации: 2024-05-23.

Package structures and package methods of organic light emitting diode (oled) protection films

Номер патента: US20180190939A1. Автор: Wei Yu,Haohan MIN. Владелец: Wuhan China Star Optoelectronics Technology Co Ltd. Дата публикации: 2018-07-05.

Led structure and preparing method of led structure

Номер патента: US20230299118A1. Автор: Kai Cheng. Владелец: Enkris Semiconductor Inc. Дата публикации: 2023-09-21.

Electronic components mounting adhesive, manufacturing method of an electronic components mounting adhesive, electronic components mounted structure, and manufacturing method of an electronic components mounted structure

Номер патента: WO2008032866A1. Автор: Tadahiko Sakai,Kouji Motomura,Hideki Eifuku. Владелец: Panasonic Corporation. Дата публикации: 2008-03-20.

Electronic components mounting adhesive, manufacturing method of an electronic components mounting adhesive, electronic components mounted structure, and manufacturing method of an electronic components mounted structure

Номер патента: US20090161328A1. Автор: Tadahiko Sakai,Kouji Motomura,Hideki Eifuku. Владелец: Matsushita Electric Industrial Co Ltd. Дата публикации: 2009-06-25.

Package structure and packaging method of oled display device, and display device

Номер патента: US20190221775A1. Автор: Yulin Wang. Владелец: Hefei Xinsheng Optoelectronics Technology Co Ltd. Дата публикации: 2019-07-18.

Fabrication method of circuit board, circuit board, and chip package structure

Номер патента: US20110056736A1. Автор: Yuan-Chang Su,Shih-Fu Huang,Chia-Hsiung Hsieh. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2011-03-10.

Pixel structure and manufacturing method thereof

Номер патента: US20140008655A1. Автор: Chien-Han Chen,Shih-Fang Chen,Chih-Cheng Wang. Владелец: E Ink Holdings Inc. Дата публикации: 2014-01-09.

Semiconductor structure, resistive random access memory unit structure, and manufacturing method of the semiconductor structure

Номер патента: US20150357562A1. Автор: Yu-Yu Lin,Feng-Min Lee,Ming-Hsiu Lee. Владелец: Macronix International Co Ltd. Дата публикации: 2015-12-10.

Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

Номер патента: US11011674B2. Автор: Chun-Yi Wu,Chaoyu Wu,Duxiang Wang,Senlin Li,Jingfeng Bi,Shih-Yi Lien. Владелец: Xiamen Sanan Optoelectronics Technology Co Ltd. Дата публикации: 2021-05-18.

Programmable switch circuit and method, method of manufacture, and devices and systems including the same

Номер патента: TW201006131A. Автор: Madhukar B Vora. Владелец: DSM Solutions Inc. Дата публикации: 2010-02-01.

A kind of structure and its manufacturing method of the three-dimensional bonding sensor of high storage capacity

Номер патента: CN109148498A. Автор: 沈亮,程文静. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2019-01-04.

Semiconductor stack structure and manufacturing method thereof

Номер патента: US20240006379A1. Автор: Chuei-Tang Wang,Shih-Chang Ku,Chien-Yuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-04.

Electric connection structure and the manufacture method of trap and substrate is connected in RFLDMOS

Номер патента: CN103035610B. Автор: 蔡莹,周正良,遇寒. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Дата публикации: 2015-08-19.

Use high efficiency photovoltaic back knot back of the body contact solar cell structure and the manufacture method of semiconductor wafer

Номер патента: CN102763225B. Автор: M·M·穆斯利赫,K·J·克拉默,D·X·王,P·卡普尔,M·曼苏里,S·苏特,V·V·雷纳,A·卡尔卡特拉,E·范·科斯查伟,D·哈伍德,M·温格特. Владелец: Solexel Inc. Дата публикации: 2016-01-20.

The structure and its adjusting method of a kind of GaN base LED with colour change function

Номер патента: CN106784190A. Автор: 张建立,江风益,刘军林,陶喜霞. Владелец: NANCHANG HUANGLV LIGHTING CO Ltd. Дата публикации: 2017-05-31.

LED PACKAGE STRUCTURE AND THE MANUFACTURING METHOD OF THE SAME

Номер патента: US20160190397A1. Автор: LIN Kun-Cheng,WU Shang-Yi. Владелец: . Дата публикации: 2016-06-30.

GLASS PACKAGING STRUCTURE AND GLASS PACKAGING METHOD OF UTILIZING THE SAME

Номер патента: US20150194627A1. Автор: Liu Yawei. Владелец: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.. Дата публикации: 2015-07-09.

The reliability testing structure and its test method of semiconductor devices

Номер патента: CN106684008B. Автор: 冯军宏. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-09-27.

Prevent bump structure and the forming method of convex some side direction etching

Номер патента: CN103887276B. Автор: 于大全,戴风伟,李昭强. Владелец: National Center for Advanced Packaging Co Ltd. Дата публикации: 2016-06-01.

LED package structure and mass production method of making the same

Номер патента: TW200627667A. Автор: Dawson Liu,Pao-Chi Chi. Владелец: Lustrous Technology Ltd. Дата публикации: 2006-08-01.

Photosensor based on graphene-nanowire hybrid structures and the manufacturing method of the same

Номер патента: KR101227600B1. Автор: 이형우,홍승훈,허광. Владелец: 서울대학교산학협력단. Дата публикации: 2013-01-29.

A laminated structure and a manufacturing method of the laminated structure

Номер патента: KR20220050220A. Автор: 히로시 이와타. Владелец: 케이힌 람테크 가부시키가이샤. Дата публикации: 2022-04-22.

Semiconductor test structure and quality test method of semiconductor passivation layer

Номер патента: CN112103202B. Автор: 周山,王丽雅,俞佩佩. Владелец: Jingxincheng Beijing Technology Co Ltd. Дата публикации: 2021-02-12.

The CSP encapsulating structure and its manufacturing method of power device

Номер патента: CN105826288B. Автор: 黄平,鲍利华,张迪雄. Владелец: Shanghai Zhen Xin Microelectronics Science And Technology Ltd. Дата публикации: 2019-08-13.

LED package structure and mass production method of making the same

Номер патента: TWI261936B. Автор: Dawson Liu,Pao-Chi Chi. Владелец: Lustrous Technology Ltd. Дата публикации: 2006-09-11.

Semiconductor test structure and failure analysis method of semiconductor device

Номер патента: CN112018084B. Автор: 李桂花. Владелец: Wuhan Xinxin Semiconductor Manufacturing Co Ltd. Дата публикации: 2022-10-25.

Based on LED integrated encapsulation structure and the making method of two-sided silicon substrate

Номер патента: CN103337496B. Автор: 韦嘉,林洺锋,张春旺,法比奥·圣阿加塔,梁润园,包厚华,徐振雷,亨德里克斯·威廉默斯·范·蔡吉. Владелец: Guangdong Zhouming Energy Conservation Technology Co Ltd. Дата публикации: 2016-06-01.

Thin film solar cell structure and its patterned method of the same

Номер патента: TW201126734A. Автор: Chih-Hung Hsiao. Владелец: Nexpower Technology Corp. Дата публикации: 2011-08-01.

Photonic package and method of manufacture

Номер патента: US12038599B2. Автор: Chen-Hua Yu,Shang-Yun Hou,Hung-Yi Kuo,Jiun Yi Wu,Hsing-Kuo Hsia,Kuo-Chiang Ting. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-16.

Photonic Package and Method of Manufacture

Номер патента: US20240329302A1. Автор: Chen-Hua Yu,Shang-Yun Hou,Hung-Yi Kuo,Jiun Yi Wu,Hsing-Kuo Hsia,Kuo-Chiang Ting. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Photonic Semiconductor Device And Method

Номер патента: US20230305226A1. Автор: Mohammed Rabiul Islam,Weiwei SONG,Stefan Rusu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

Photonic semiconductor device and method

Номер патента: US12092862B2. Автор: Mohammed Rabiul Islam,Weiwei SONG,Stefan Rusu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Photonic Semiconductor Device And Method

Номер патента: US20240369761A1. Автор: Mohammed Rabiul Islam,Weiwei SONG,Stefan Rusu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Photonic semiconductor device and method

Номер патента: US11703639B2. Автор: Mohammed Rabiul Islam,Weiwei SONG,Stefan Rusu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-07-18.

Structures and methods to enable a full intermetallic interconnect

Номер патента: US09911711B2. Автор: Charles L. Arvin,Christopher D. Muzzy,Wolfgang Sauter. Владелец: International Business Machines Corp. Дата публикации: 2018-03-06.

Bonded semiconductor structure and method for forming the same

Номер патента: US09691733B1. Автор: Xu Yang Shen,Sin-Shien Lin. Владелец: United Microelectronics Corp. Дата публикации: 2017-06-27.

Interface interconnect structure for efficient heat dissipation of power electronic device and preparation method therefor

Номер патента: US20240145336A1. Автор: LIN ZHU,Jing Ren,Feifei Huang,Mingliang Huang. Владелец: Dalian University of Technology. Дата публикации: 2024-05-02.

Interface interconnect structure for efficient heat dissipation of power electronic device and preparation method therefor

Номер патента: US12068220B2. Автор: LIN ZHU,Jing Ren,Feifei Huang,Mingliang Huang. Владелец: Dalian University of Technology. Дата публикации: 2024-08-20.

Semiconductor packages including interposer and methods of manufacturing the same

Номер патента: US09716017B2. Автор: Tac Keun OH,Seung Taek Yang. Владелец: SK hynix Inc. Дата публикации: 2017-07-25.

Interconnected integrated circuit (ic) chip structure and packaging and method of forming same

Номер патента: US20190287879A1. Автор: Wolfgang Sauter,David B. Stone,Nicholas A. Polomoff,Mark W. Kuemerle,Jawahar P. Nayak,Eric W. Tremble,Seungman Choi,Eric S. Parent. Владелец: Globalfoundries Inc. Дата публикации: 2019-09-19.

Interposer with built-in wiring for testing an embedded integrated passive device and methods for forming the same

Номер патента: US20240266266A1. Автор: Hsiang-Tai Lu,Kuan-Lung Wu,Kuo-Ching Hsu,Ya Huei Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Integrated circuit packages with detachable interconnect structures

Номер патента: US09893034B2. Автор: Yuanlin Xie. Владелец: Altera Corp. Дата публикации: 2018-02-13.

A modifiable circuit, methods of use and making thereof

Номер патента: EP1494283A1. Автор: Vafa J. Rakshani,Edmund H. Spittles,Tim Sippel,Richard Unda,Manolito Catalasan. Владелец: Broadcom Corp. Дата публикации: 2005-01-05.

Semiconductor device and method of manufacturing the same

Номер патента: US09997442B1. Автор: Chih-Cheng LEE,Hsing Kuo TIEN,Chai-Chi Lin,Chih-Yung Yang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2018-06-12.

Power overlay structure and method of making same

Номер патента: US09704788B2. Автор: Arun Virupaksha Gowda,Paul Alan McConnelee,Shakti Singh Chauhan. Владелец: General Electric Co. Дата публикации: 2017-07-11.

Semiconductor device and method for making the same

Номер патента: US20220208698A1. Автор: Yu-Hsien Lin,Chao-Cheng Ting,Yu-An Li. Владелец: Pure Metallica Co Ltd. Дата публикации: 2022-06-30.

3d integrated circuit (3dic) structures and methods for manufacturing the same

Номер патента: US20240258222A1. Автор: Jongkook Kim,Chengtar WU,ChoongBin YIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-08-01.

Semiconductor device having wide tuning range varactor and method of manufacturing the same

Номер патента: US20230378169A1. Автор: HO-HSIANG Chen,Tzu-Jin Yeh,Ying-Ta Lu,Chi-Hsien Lin,Hsien-Yuan LIAO,Chiao-Han LEE,Hsiu-Wen Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-23.

Semiconductor package structure and method for manufacturing the same

Номер патента: US11901245B2. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-02-13.

Semiconductor package structure and method for manufacturing the same

Номер патента: US20220399240A1. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-12-15.

Semiconductor package structure and method for manufacturing the same

Номер патента: US20240186193A1. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2024-06-06.

Package stucture and method of fabricating the same

Номер патента: US09905503B2. Автор: Shih-Ping Hsu,Chao-Chung TSENG. Владелец: Phoenix Pioneer Technology Co Ltd. Дата публикации: 2018-02-27.

Semiconductor package structure and method for manufacturing the same

Номер патента: US20220115276A1. Автор: Chen-Chao Wang,Chih-Yi Huang,Keng-Tuan Chang. Владелец: Advanced Semiconductor Engineering Inc. Дата публикации: 2022-04-14.

Organic interposer including intra-die structural reinforcement structures and methods of forming the same

Номер патента: US20240321717A1. Автор: Ming-Chih Yew,Shin-puu Jeng,Po-Yao Lin,Shu-Shen Yeh,Chia-Kuei Hsu,Li-Ling Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-26.

Semiconductor Device and Method of Providing Electrostatic Discharge Protection for Integrated Passive Devices

Номер патента: US20100270549A1. Автор: Rui Huang,Yaojian Lin,Robert C. Frye. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2010-10-28.

Interconnect structure and method of forming same

Номер патента: US09679859B2. Автор: Ku-Feng Yang,Wen-Chih Chiou,Hsin-Yu Chen,Yung-Chi Lin,Tsang-Jiuh Wu,Lin-Chih Huang,Hsiao Yun Lo,Tasi-Jung Wu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-13.

Semiconductor package, semiconductor bonding structure, and method of fabricating the same

Номер патента: US20240120316A1. Автор: Yu-Jie Lin,Kai-Kuang Ho,Yi-Feng Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2024-04-11.

Microfeature assemblies including interconnect structures and methods for forming such interconnect structures

Номер патента: WO2007027417A2. Автор: Kia Heng Puah. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2007-03-08.

Microfeature assemblies including interconnect structures and methods for forming such interconnect structures

Номер патента: EP1938369A2. Автор: Kia Heng Puah. Владелец: Micron Technology Inc. Дата публикации: 2008-07-02.

Embedded memory device with reduced plasma-induced damage and methods of forming the same

Номер патента: US20240113043A1. Автор: Harry-Hak-Lay Chuang,Hung Cho Wang,Wen-Chun YOU. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-04.

Fully molded semiconductor structure with face mounted passives and method of making the same

Номер патента: US20220352106A1. Автор: Craig Bishop,Clifford Sandstrom,Timothy L. Olson,Benedict San Jose. Владелец: Deca Technologies USA Inc. Дата публикации: 2022-11-03.

Methods of forming trenches in packages structures and structures formed thereby

Номер патента: US20160381800A1. Автор: Pramod Malatkar,Robert Nickerson,Prasanna Raghavan,Naga Sivakumar Yagnamurthy,Huiyang FEI. Владелец: Intel Corp. Дата публикации: 2016-12-29.

Methods of forming trenches in packages structures and structures formed thereby

Номер патента: WO2016209475A1. Автор: Pramod Malatkar,Robert Nickerson,Prasanna Raghavan,Naga Sivakumar Yagnamurthy,Huiyang FEI. Владелец: Intel Corporation. Дата публикации: 2016-12-29.

Interconnect Structures, Packaged Semiconductor Devices, and Methods of Packaging Semiconductor Devices

Номер патента: US20230307399A1. Автор: Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

Interconnect Structures, Packaged Semiconductor Devices, and Methods of Packaging Semiconductor Devices

Номер патента: US20200013742A1. Автор: Hsien-Wei Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-01-09.

Fiber to chip coupler and method of making the same

Номер патента: US12050348B2. Автор: Hau-yan Lu,Chia-Ping Lai,Chien-Chang Lee,Chien-Ying WU,YuehYing LEE,Sui-Ying Hsu,Chen-Hao Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-30.

Interconnect structure for surface mounted devices

Номер патента: US20020130410A1. Автор: Krystyna Semkow,Edward Pillai,Linda Rapp. Владелец: International Business Machines Corp. Дата публикации: 2002-09-19.

Semiconductor Device and Method of Forming Vertically Offset Bond on Trace Interconnect Structure on Leadframe

Номер патента: US20130154067A1. Автор: Reza A. Pagaila,HunTeak Lee,KiYoun Jang. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2013-06-20.

Image sensor device and method of forming same

Номер патента: US09773828B2. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Jeng-Shyan Lin,Wen-De Wang,Chun-Chieh Chuang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-26.

Semiconductor Device and Method of Forming an Antenna-in-Package Structure

Номер патента: US20240321664A1. Автор: Heesoo Lee,Seunghyun Lee,Yejin PARK. Владелец: Jcet Stats Chippac Korea Ltd. Дата публикации: 2024-09-26.

Electronic power device with flat electronic interconnection structure

Номер патента: US09991191B2. Автор: Julie Widiez,Bastien LETOWSKI,Nicolas Rouger,Jean-Christophe Crebier. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2018-06-05.

Electromechanical device including a suspended structure and method of fabricating the same

Номер патента: US09650237B2. Автор: Navab Singh,Ilker E. OCAK,Julius Ming Lin TSAI. Владелец: Agency for Science Technology and Research Singapore. Дата публикации: 2017-05-16.

Photonic semiconductor device and method of manufacture

Номер патента: US11973074B2. Автор: Chen-Hua Yu,Hsing-Kuo Hsia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-30.

Photonic Semiconductor Device and Method of Manufacture

Номер патента: US20240266338A1. Автор: Chen-Hua Yu,Hsing-Kuo Hsia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-08.

Semiconductor structure and method of manufacturing the same

Номер патента: US20240113237A1. Автор: Yun-Wei Cheng,Kuo-Cheng Lee,Cheng-Ming Wu,Feng-Chien Hsieh,Ping Kuan Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-04.

Semiconductor devices and methods of forming the same

Номер патента: US20230041837A1. Автор: Wei-Lin Chen,Chun-Hao Chou,Kuo-Cheng Lee,Yu-Cheng Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-09.

Systems and methods of testing memory devices

Номер патента: US12020996B2. Автор: Chia-En HUANG,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

Systems and methods of testing memory devices

Номер патента: US20240312850A1. Автор: Chia-En HUANG,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-19.

Method of fabricating light pipe of image sensing device

Номер патента: US20170018595A1. Автор: Saysamone Pittikoun,Tzu-Wen Kao,Yu-Yuan Lai,Meng-Chieh Hsieh. Владелец: Powerchip Technology Corp. Дата публикации: 2017-01-19.

Layered molded direct contact and dielectric structure and method for making the same

Номер патента: US20240243089A1. Автор: Craig Bishop,Paul R. Hoffman,Clifford Sandstrom,Timothy L. Olson,Robin Davis. Владелец: Deca Technologies USA Inc. Дата публикации: 2024-07-18.

Solar module with optimized interconnection and method of manufacturing the same

Номер патента: US20240363780A1. Автор: Susanne Blankemeyer,Henning Schulte-Huxel,Marc Köntges,Thomas Daschinger. Владелец: Institut fuer Solarenergieforschung GmbH. Дата публикации: 2024-10-31.

Layered molded direct contact and dielectric structure and method for making the same

Номер патента: WO2024155549A1. Автор: Craig Bishop,Paul R. Hoffman,Clifford Sandstrom,Timothy L. Olson,Robin Davis. Владелец: Deca Technologies Usa, Inc.. Дата публикации: 2024-07-25.

Three-dimensional memory device including through-memory-level via structures and methods of making the same

Номер патента: US20210384206A1. Автор: Takaaki IWAI,Hirofumi TOKITA,Yoshitaka Otsu. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-09.

Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof

Номер патента: US09953992B1. Автор: Hiroyuki Ogawa,James Kai. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-04-24.

Interconnect structure configured to control solder flow and method of manufacturing of same

Номер патента: US09609752B1. Автор: Jack V. Ajoian,Daniel L. Blass. Владелец: Lockheed Martin Corp. Дата публикации: 2017-03-28.

Chip stack structure with conductive plug and method for forming the same

Номер патента: US20240203918A1. Автор: Chen-Hua Yu,Shih-Ping Lin,Chuei-Tang Wang,Chieh-Yen Chen,Jeng-Shien Hsieh,Tso-Jung Chang,Chih-Peng Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-20.

Optical interconnection structure and method for manufacturing the same

Номер патента: EP2112536A3. Автор: Yongtak Lee,Youngmin Song,Eunkyeong Min. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2013-03-27.

Optical interconnection structure and method for manufacturing the same

Номер патента: US20090269010A1. Автор: Yongtak Lee,Youngmin Song,Eunkyeong Min. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2009-10-29.

Optical interconnection structure and method for manufacturing the same

Номер патента: US8165429B2. Автор: Yongtak Lee,Youngmin Song,Eunkyeong Min. Владелец: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2012-04-24.

Structure and method for 3D image sensor

Номер патента: US09812487B2. Автор: Dun-Nian Yaung,Jen-Cheng Liu,Shuang-Ji Tsai,Jeng-Shyan Lin,Feng-Chi Hung,Chun-Chieh Chuang,Min-Feng KAO,Shu-Ting Tsai,Wen-I Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-11-07.

Semiconductor device and method of forming the same

Номер патента: US09911787B2. Автор: Gwanhyeob Koh,Yoonjong Song,Kiseok Suh. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-06.

Image sensor grid and method of fabrication of same

Номер патента: US20220359598A1. Автор: Chin-Yu Lin,Keng-Ying Liao,Po-Zen Chen,Su-Yu Yeh,Huai-Jen Tung,Hsien-Li CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-10.

Anisotropic Magnetoresistive Device and Method for Fabricating the Same

Номер патента: US20150340594A1. Автор: Chien-Min Lee,Fu-Tai Liou. Владелец: Voltafield Technology Corp. Дата публикации: 2015-11-26.

Interconnect structures with intermetallic palladium joints and associated systems and methods

Номер патента: US09905539B2. Автор: Jaspreet S. Gandhi. Владелец: Micron Technology Inc. Дата публикации: 2018-02-27.

Methods of forming semiconductor device assemblies and interconnect structures, and related semiconductor device assemblies and interconnect structures

Номер патента: US09520370B2. Автор: Jaspreet S. Gandhi. Владелец: Micron Technology Inc. Дата публикации: 2016-12-13.

Interconnection structures and methods for making the same

Номер патента: US09786634B2. Автор: Chun-Hsiang Yang,Cheng-Heng Kao,Han-Tang HUNG,Yan-Bin Chen. Владелец: National Taiwan University NTU. Дата публикации: 2017-10-10.

Interconnect structures for logic and memory devices and methods of fabrication

Номер патента: US20200303623A1. Автор: Oleg Golonzka,Christopher WIEGAND,Gokul Malyavanatham. Владелец: Intel Corp. Дата публикации: 2020-09-24.

Photonic Semiconductor Device and Method of Manufacture

Номер патента: US20220365278A1. Автор: Chen-Hua Yu,Shang-Yun Hou,Hsing-Kuo Hsia,Sung-Hui Huang,Chi-Hsi Wu,Kuo-Chiang Ting. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-11-17.

High specific area composite foam and an associated method of fabrication

Номер патента: US09534855B2. Автор: Faisal Razi Ahmad,Kaustubh Ravindra Nagarkar,Matthew Jeremiah Misner,Shakti Singh Chauhan. Владелец: General Electric Co. Дата публикации: 2017-01-03.

Resistive random access memory and method for manufacturing the same

Номер патента: US09478741B2. Автор: Mao-Teng Hsu. Владелец: Powerchip Technology Corp. Дата публикации: 2016-10-25.

Semiconductor device and method of forming MEMS package

Номер патента: US09701534B2. Автор: Il Kwon Shim,Yaojian Lin. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-07-11.

Structure and Method for Backside-Illuminated Image Device

Номер патента: US20230317760A1. Автор: Chen-Jong Wang,Dun-Nian Yaung,Ching-Chun Wang,Tzu-Jui WANG,Hao-Lin Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-05.

Resilient interconnect structure for electronic components and method for making the same

Номер патента: EP1200992A1. Автор: Gary W. Grube,Benjamin N. Eldridge,Gaetan L. Mathieu,Richard A. Larder. Владелец: Formfactor Inc. Дата публикации: 2002-05-02.

Determining geometrical configuration of interconnect structure

Номер патента: US20070298527A1. Автор: Essam Mina,Wayne H. Woods,William Piper. Владелец: International Business Machines Corp. Дата публикации: 2007-12-27.

Implant damage free image sensor and method of the same

Номер патента: US10177187B2. Автор: JHY-JYI SZE,Chen-Jong Wang,Dun-Nian Yaung,Yimin Huang,Alexander Kalnitsky,Yuichiro Yamashita. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-08.

Energy harvest and storage device for semiconductor chips and methods for forming the same

Номер патента: US12057516B2. Автор: Kuo-Ching Huang,Yi Ching Ong,Fu-Hai Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Devices and methods for ultra thin photodiode arrays on bonded supports

Номер патента: WO2010053881A1. Автор: Frederick A. Flitsch,Alexander O. Goushcha. Владелец: Array Optronix, Inc.. Дата публикации: 2010-05-14.

Sensor-enabled geosynthetic material and method of making and using the same

Номер патента: EP2697621A1. Автор: Brian Grady,Kianoosh Hatami. Владелец: University of Oklahoma . Дата публикации: 2014-02-19.

Catalyst particles comprising hollow multilayered base metal-precious metal core/shell particles and method of their manufacture

Номер патента: US09440224B2. Автор: Daniel Herein,Dan V. Goia,Igor V. Sevonkaev. Владелец: Umicore AG and Co KG. Дата публикации: 2016-09-13.

Packaging structure and packaging method of edge couplers and fiber array

Номер патента: US12085767B2. Автор: LIN ZHU,Jing Wang,Ben NIU. Владелец: Suteng Innovation Technology Co Ltd. Дата публикации: 2024-09-10.

Catalyst particles comprising hollow multilayered base metal-precious metal core/shell particles and method of their manufacture

Номер патента: US20140171297A1. Автор: Daniel Herein,Dan V. Goia,Igor V. Sevonkaev. Владелец: Umicore AG and Co KG. Дата публикации: 2014-06-19.

Detector Tube Stack with Integrated Electron Scrub System and Method of Manufacturing the Same

Номер патента: US20120175519A1. Автор: Nathaniel S. Hankel,Ken Jamison. Владелец: Individual. Дата публикации: 2012-07-12.

Method of making bipolar carbon-plastic electrode structure-containing multicell electrochemical device

Номер патента: US4164068A. Автор: Joseph A. Shropshire,Hsue C. Tsien. Владелец: Exxon Research and Engineering Co. Дата публикации: 1979-08-14.

Battery structure, electronic device and manufacturing method of battery structure

Номер патента: US20150064528A1. Автор: Chih-Kai Hu,Wan-Hsieh Liu,Shu-Feng Lin,Yung-Ling Chou. Владелец: HTC Corp. Дата публикации: 2015-03-05.

A kind of connection structure and the connection method of pillar rechargeable battery and pedestal

Номер патента: CN107994197A. Автор: 汪波,杨钢,王红斌. Владелец: Feng Feng Electronic Packaging Materials (wuhan) Co Ltd. Дата публикации: 2018-05-04.

Biological detection device, biological chip, microelectrode structure and manufacturing method thereof

Номер патента: US11892424B2. Автор: Kui Liang,Shuobin LIANG. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2024-02-06.

Biological detection device, biological chip, microelectrode structure and manufacturing method thereof

Номер патента: US20220196589A1. Автор: Kui Liang,Shuobin LIANG. Владелец: Beijing BOE Technology Development Co Ltd. Дата публикации: 2022-06-23.

The anode of solid oxide fuel cell with networking structure and the preparing method of it

Номер патента: KR100622711B1. Автор: 이종호,이해원,이기춘,고행진,김주선,송휴섭. Владелец: 한국과학기술연구원. Дата публикации: 2006-09-14.

A kind of the phase transformation soaking plate structure and its manufacturing method of integrated water-cooling system

Номер патента: CN110534841A. Автор: 李勇,杨世凡,邓励强,佘佩健. Владелец: South China University of Technology SCUT. Дата публикации: 2019-12-03.

Terminal crimping structure and terminal crimping method of crimping terminal to copper alloy wire and wire harness with the terminal crimping structure

Номер патента: US7985923B2. Автор: Kenji Suzuki,Shigeharu Suzuki,Tetsuro Ide,Satoshi Yagi,Hideto Kumakura. Владелец: Yazaki Corp. Дата публикации: 2011-07-26.

Terminal processing structure and terminal processing method of coaxial cable

Номер патента: US20130319761A1. Автор: Shouichi FURUKAWA. Владелец: Yazaki Corp. Дата публикации: 2013-12-05.

A structure and an operating method of switch using damping

Номер патента: KR100514876B1. Автор: 정웅철. Владелец: 현대자동차주식회사. Дата публикации: 2005-09-14.

Bottom plate structure and electrode formation method of color plasma display panel

Номер патента: KR19980077089A. Автор: 김건우. Владелец: 구자홍. Дата публикации: 1998-11-16.

Terminal processing structure and terminal processing method of coaxial cable

Номер патента: US9071045B2. Автор: Shouichi FURUKAWA. Владелец: Yazaki Corp. Дата публикации: 2015-06-30.

The antenna structure and its design method of mobile terminal

Номер патента: CN110417434A. Автор: 刘辉,陈笛. Владелец: Nubia Technology Co Ltd. Дата публикации: 2019-11-05.

Stretchable interconnect structure and method of fabricating the same

Номер патента: US12120814B2. Автор: Yue Zhao,Chee Keong Tee,Yu Jun TAN. Владелец: NATIONAL UNIVERSITY OF SINGAPORE. Дата публикации: 2024-10-15.

Vertical inductor and method of manufacturing the same

Номер патента: US09984819B2. Автор: Zheng Chen,Xin Li,Haifang Zhang,Xuanjie Liu,Dekui Qi. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2018-05-29.

Socket interconnect structures and related methods

Номер патента: US20240113479A1. Автор: Kai Xiao,Phil Geng,Raul Enriquez Shibayama,Steven A. Klein,Carlos Alberto Lizalde Moreno. Владелец: Intel Corp. Дата публикации: 2024-04-04.

Gas-diffusive electrode, method of its fabrication, membrane and electrode unit containing gas-diffusive electrode and method of fabrication of membrane and electrode unit containing gas-diffusive electrode

Номер патента: RU2559833C2. Автор: Вальтер АДРИАНСЕНС,ГАЙЕГО Иоланда АЛЬВАРЕС,Филиппе ВЕРМЕЙРЕН,Андре-Виктор КЛАЕС. Владелец: Вито Нв. Дата публикации: 2015-08-10.

Thin films having large temperature coefficient of resistance and methods of fabricating same

Номер патента: US09664572B2. Автор: WEI Tian,Eric Walter Singleton,Declan Macken,Venkateswara Rao Inturi,Huaqing Yin. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2017-05-30.

Mask structure and manufacturing method thereof

Номер патента: US20190250502A1. Автор: Yu-Hua Chen,Cheng-Ta Ko,Pu-Ju Lin,Shih-Lian Cheng,Jui-Jung Chien,Wei-Tse Ho. Владелец: Unimicron Technology Corp. Дата публикации: 2019-08-15.

Circuit board assembling structure, electronic device having the same and assembling method of electronic device

Номер патента: US20150103475A1. Автор: Jui-Lin Yang. Владелец: Getac Technology Corp. Дата публикации: 2015-04-16.

Focus detection apparatus and method, method of controlling focus detection apparatus, and image capturing apparatus

Номер патента: US09615017B2. Автор: Kengo Takeuchi. Владелец: Canon Inc. Дата публикации: 2017-04-04.

Slidable electronic apparatus having digitizer separation structure, and touch driving method of slidable electronic apparatus

Номер патента: EP4242803A1. Автор: Changryong HEO,Minuk Kim,Donghyun Yeom,Kwangtai Kim,Sungho Ahn,Joungmin CHO,Bongjun Ko,Bowon Jung,Jihyung JUNG,Sungdae Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-13.

Slidable electronic apparatus having digitizer separation structure, and touch driving method of slidable electronic apparatus

Номер патента: US20230305596A1. Автор: Changryong HEO,Minuk Kim,Donghyun Yeom,Kwangtai Kim,Sungho Ahn,Joungmin CHO,Bongjun Ko,Bowon Jung,Jihyung JUNG,Sungdae Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-09-28.

Semiconductor Structure and Manufacturing Method of the Same

Номер патента: US20120181699A1. Автор: Yi-Hsuan Hsiao,Shih-Hung Chen,Hang-Ting Lue. Владелец: Macronix International Co Ltd. Дата публикации: 2012-07-19.

Mask structure and manufacturing method thereof

Номер патента: US11366381B2. Автор: Yu-Hua Chen,Cheng-Ta Ko,Pu-Ju Lin,Shih-Lian Cheng,Jui-Jung Chien,Wei-Tse Ho. Владелец: Unimicron Technology Corp. Дата публикации: 2022-06-21.

Focus detection apparatus and method, method of controlling focus detection apparatus, and image capturing apparatus

Номер патента: US20140362279A1. Автор: Kengo Takeuchi. Владелец: Canon Inc. Дата публикации: 2014-12-11.

WIRE CONNECTING STRUCTURE AND WIRE CONNECTING METHOD OF THREE-PHASE MOTOR, AND THREE-PHASE MOTOR

Номер патента: US20190006963A1. Автор: ISAJI Naoya. Владелец: NIDEC SANKYO CORPORATION. Дата публикации: 2019-01-03.

The forming method of isolation structure and the forming method of semiconductor structure

Номер патента: CN107204339B. Автор: 洪中山,张翼英. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2019-11-01.

A kind of the P2P self-organization network structures and resource search method of structuring

Номер патента: CN108768690A. Автор: 叶双,叶剑虹. Владелец: HUAQIAO UNIVERSITY. Дата публикации: 2018-11-06.

A kind of theft-prevention structure and its construction method of cable convenient for safeguarding

Номер патента: CN107975067B. Автор: 闫相明. Владелец: Individual. Дата публикации: 2019-09-10.

The data cell array structure and its manufacture method of a kind of nand flash memory

Номер патента: CN107230677A. Автор: 刘红霞,肖磊,沈磊,刘岐,黄新运,沈晔晖. Владелец: Shanghai Fudan Microelectronics Group Co Ltd. Дата публикации: 2017-10-03.

Wire connecting structure and wire connecting method of three-phase motor, and three-phase motor

Номер патента: US10523137B2. Автор: Naoya ISAJI. Владелец: Nidec Sankyo Corp. Дата публикации: 2019-12-31.

The cementing structure and its adhering method of motor surface-mount type magnet steel and rotor

Номер патента: CN108183567A. Автор: 刘冬,吴波,周楠,徐正华,钱巍. Владелец: NANJING ESTUN AUTOMATIC CONTROL TECHNOLOGY Co Ltd. Дата публикации: 2018-06-19.

A printed circuit board embedding an antenna and a filter structure and a menufacturing method of the same

Номер патента: KR101134980B1. Автор: 김동수,유종인,이우성,유찬세. Владелец: 전자부품연구원. Дата публикации: 2012-04-10.

SUBFRAME STRUCTURE AND HARQ OPERATING METHOD OF WIRELESS COMMUNICATION SYSTEM

Номер патента: US20170201994A1. Автор: JUNG Kwang Ryul,LIM Soon Yong. Владелец: Electronics and Telecommunications Research Institute. Дата публикации: 2017-07-13.

HEAT DISSIPATION STRUCTURE AND HEAT DISSIPATION METHOD OF ELECTRONIC DEVICE

Номер патента: US20200214167A1. Автор: Saito Makoto,Nakamura Ken,HATANO Toshinobu. Владелец: Panasonic Intellectual Property Management Co., Ltd.. Дата публикации: 2020-07-02.

Nth-ORDER ARBITRARY-PHASE-SHIFT SINUSOIDAL OSCILLATOR STRUCTURE AND ANALYTICAL SYNTHESIS METHOD OF MAKING THE SAME

Номер патента: KR101197951B1. Автор: 충-밍 창,슈-후이 투. Владелец: 충 위엔 크리스찬 유니버시티. Дата публикации: 2012-11-05.

The encapsulating structure and its manufacture method of Organic Light Emitting Diode

Номер патента: CN104779354B. Автор: 林柏青,蔡奇哲,黄钰真,杨沁洁. Владелец: Innolux Display Corp. Дата публикации: 2017-11-24.

The embedded pad structure and its manufacturing method of three-dimensional storage part

Номер патента: CN109155320A. Автор: 陈俊,肖莉红,夏志良. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2019-01-04.

Energy transmission structure and energy transmission method of hollow non-contact transformer

Номер патента: CN112653253A. Автор: 刘强,黄勇,张丹,翟秋刚,高艳杰. Владелец: Beijing Ruisai Chang Cheng Aeronautical M & C Technology Co ltd. Дата публикации: 2021-04-13.

Speed regulation structure and speed regulation method of single-phase brushless direct current motor

Номер патента: CN114531067A. Автор: 潘兆铿. Владелец: Individual. Дата публикации: 2022-05-24.

Charging structure and charging control method of mobile terminal

Номер патента: KR101677619B1. Автор: 박재영. Владелец: 엘지전자 주식회사. Дата публикации: 2016-11-18.

Heat dissipation structure and heat dissipation method of electronic device

Номер патента: CN111385448A. Автор: 斋藤诚,秦野敏信,中村健. Владелец: Panasonic Intellectual Property Management Co Ltd. Дата публикации: 2020-07-07.

Nth-order arbitrary-phase-shift sinusoidal oscillator structure and analytical synthesis method of making the same

Номер патента: US8264289B2. Автор: Chun-Ming Chang,Shu-Hui Tu. Владелец: CHUNG YUAN CHRISTIAN UNIVERSITY. Дата публикации: 2012-09-11.

Packet structure and packet transmission method of network control protocol

Номер патента: CN101164285A. Автор: 李相均,李君锡,田雄,郑钟勋. Владелец: LG ELECTRONICS INC. Дата публикации: 2008-04-16.

Slidable electronic apparatus having digitizer separation structure, and touch driving method of slidable electronic apparatus

Номер патента: EP4242803A4. Автор: Changryong HEO,Minuk Kim,Donghyun Yeom,Kwangtai Kim,Sungho Ahn,Joungmin CHO,Bongjun Ko,Bowon Jung,Jihyung JUNG,Sungdae Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-01.

Micromechanical component with a separate, galvanic isolated active structure and an operating method of such a component

Номер патента: RU2653112C2. Автор: Гюнтер ШПАХЛИНГЕР. Владелец: Нортроп Грумман Литеф Гмбх. Дата публикации: 2018-05-07.

Unmanned survey vessel with anti-overturning structure and anti-overturning method of same

Номер патента: US20240116606A1. Автор: Lingyun Zhang,Jinliang Hou,Fenghua Wu,Jiudong YANG,Muyao SHI,Liwen YIN,Gui'e TIAN,Lipeng GONG. Владелец: North China University of Science and Technology. Дата публикации: 2024-04-11.

Structural and other components, method of manufacture

Номер патента: CA2136190C. Автор: John Kenton Britten. Владелец: Individual. Дата публикации: 1998-08-04.

Semiconductor device and method of fabricating the same

Номер патента: US20240365677A1. Автор: Rai-Min Huang,Jia-Rong Wu,Yi-An Shih,I-Fan Chang,Hsiu-Hao Hu,Po Kai Hsu. Владелец: United Microelectronics Corp. Дата публикации: 2024-10-31.

Structure and method of fabricating embedded vertical dram arrays with silicided bitline and polysilicon interconnect

Номер патента: WO2003005447A3. Автор: Carl Radens,Ulrike Gruening,Jack Mandelman,Ramachandra Divakaruni,Larry Nesbit. Владелец: Ibm Uk. Дата публикации: 2003-08-28.

Structure and method of fabricating embedded vertical dram arrays with silicided bitline and polysilicon interconnect

Номер патента: EP1402576A2. Автор: Carl Radens,Ulrike Gruening,Jack Mandelman,Ramachandra Divakaruni,Larry Nesbit. Владелец: IBM United Kingdom Ltd. Дата публикации: 2004-03-31.

Structure and method of fabricating embedded vertical dram arrays with silicided bitline and polysilicon interconnect

Номер патента: WO2003005447A2. Автор: Carl Radens,Ulrike Gruening,Jack Mandelman,Ramachandra Divakaruni,Larry Nesbit. Владелец: Ibm United Kingdom Limited. Дата публикации: 2003-01-16.

Structure and method of fabricating embedded vertical dram arrays with silicided bitline and polysilicon interconnect

Номер патента: WO2003005447A8. Автор: Carl Radens,Ulrike Gruening,Jack Mandelman,Ramachandra Divakaruni,Larry Nesbit. Владелец: Ibm Uk. Дата публикации: 2004-02-19.

3D NAND memory device and method of forming the same

Номер патента: US11737263B2. Автор: Fushan Zhang,Enbo Wang,Yushi Hu,Haohao YANG,Ruo Fang ZHANG,Qianbing Xu. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2023-08-22.

Scalable interconnect structure utilizing quality-of-service handling

Номер патента: EP1400068A2. Автор: John E. Hesse,Coke S. Reed. Владелец: Interactic Holdings LLC. Дата публикации: 2004-03-24.

Scalable interconnect structure utilizing quality-of-service handling

Номер патента: WO2002033899A3. Автор: Coke S Reed,John E Hess. Владелец: Interactic Holdings LLC. Дата публикации: 2004-01-08.

Photonic semiconductor device and method of manufacture

Номер патента: US12092861B2. Автор: Chen-Hua Yu,Hsing-Kuo Hsia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-17.

Photonic semiconductor device and method of manufacture

Номер патента: US20240361520A1. Автор: Chen-Hua Yu,Hsing-Kuo Hsia. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-31.

Connection region between adjacent memory arrays for three-dimensional memory device with terrace regions and method of making thereof

Номер патента: EP3631856A1. Автор: Hiroyuki Ogawa,James Kai. Владелец: SanDisk Technologies LLC. Дата публикации: 2020-04-08.

STRUCTURE AND METHOD TO GAIN SUBSTANTIAL RELIABILITY IMPROVEMENTS IN LEAD-FREE BGAs ASSEMBLED WITH LEAD-BEARING SOLDERS

Номер патента: US20060060638A1. Автор: Mukta Farooq,Charles Goldsmith. Владелец: International Business Machines Corp. Дата публикации: 2006-03-23.

Structure and method to gain substantial reliability improvements in lead-free BGAs assembled with lead-bearing solders

Номер патента: US7875806B2. Автор: Charles C. Goldsmith,Muta G. Farooq. Владелец: International Business Machines Corp. Дата публикации: 2011-01-25.

STRUCTURE AND METHOD TO GAIN SUBSTANTIAL RELIABILITY IMPROVEMENTS IN LEAD-FREE BGAs ASSEMBLED WITH LEAD-BEARING SOLDERS

Номер патента: US20100139958A1. Автор: Mukta G. Farooq,Charles C. Goldsmith. Владелец: International Business Machines Corp. Дата публикации: 2010-06-10.

STRUCTURE AND METHOD TO GAIN SUBSTANTIAL RELIABILITY IMPROVEMENTS IN LEAD-FREE BGAs ASSEMBLED WITH LEAD-BEARING SOLDERS

Номер патента: US20070228117A1. Автор: Mukta Farooq,Charles Goldsmith. Владелец: International Business Machines Corp. Дата публикации: 2007-10-04.

Semiconductor structure and method for forming the same

Номер патента: US20240268124A1. Автор: Chien-Ting Lin,Chin-Yang Hsieh,Hui-Lin WANG,Chen-Yi Weng,Jing-Yin Jhang,Yu-Ping Wang,I-Ming Tseng,Yi-Hui Lee,Ying-Cheng Liu,Yi-An Shih. Владелец: United Microelectronics Corp. Дата публикации: 2024-08-08.

Scalable apparatus and method for increasing throughput in multiple level minimum logic networks using a plurality of control lines

Номер патента: EP1261881A4. Автор: Coke S Reed,John E Hesse. Владелец: Interactic Holdings LLC. Дата публикации: 2005-07-27.

Scalable apparatus and method for increasing throughput in multiple level minimum logic networks using a plurality of control lines

Номер патента: EP1261881A1. Автор: John E. Hesse,Coke S. Reed. Владелец: Interactic Holdings LLC. Дата публикации: 2002-12-04.

Z interconnect structure and method

Номер патента: US20030127247A1. Автор: Mark Pierson,Lisa Jimarez. Владелец: International Business Machines Corp. Дата публикации: 2003-07-10.

Method of high speed and dynamic configuration of a transceiver system

Номер патента: US20210199718A1. Автор: Yogesh Sethi. Владелец: HUGHES NETWORK SYSTEMS LLC. Дата публикации: 2021-07-01.

Knitted bag and method of manufacturing the same

Номер патента: US12049715B2. Автор: William Roth Martin,La Vion Gibson,Shengquan Zhou. Владелец: Rothys Inc. Дата публикации: 2024-07-30.

Coating composition for forming gas barrier layer, gas barrier film, and method for producing gas barrier film

Номер патента: US09540537B2. Автор: Kazuya Kimura,Kenichi Takahashi,Kazuyuki Hanada,Manabu Uruno. Владелец: Ukima Chemicals and Color Mfg Co Ltd. Дата публикации: 2017-01-10.

System and method for recursively iterating over a loosely associated data structure

Номер патента: US09811563B2. Автор: David Gilder. Владелец: NetSuite Inc. Дата публикации: 2017-11-07.

Method of extracting a complex of biologically active substances from biomass of root cultures of potentilla alba l_ in vitro

Номер патента: RU2724487C1. Автор: Александр Юрьевич Просеков,Любовь Сергеевна Дышлюк,Ирина Сергеевна Милентьева,Ольга Олеговна Бабич,Людмила Константиновна Асякина,Александра Васильевна Заушинцена. Владелец: федеральное государственное бюджетное образовательное учреждение высшего образования "Кемеровский государственный университет" (КемГУ). Дата публикации: 2020-06-23.

Method of measuring flatness of metal article and corresponding device

Номер патента: RU2717741C2. Автор: Доминик ТЕЛЬЕ,Бастьен БУБИ,Флориан ТУРШЕ. Владелец: Прайметалз Текнолоджиз Франс Сас. Дата публикации: 2020-03-25.

Seal structure and mounting method of belt cover for internal combustion engine

Номер патента: US12031499B1. Автор: Osamu Yoda,Koichiro Asame. Владелец: Honda Motor Co Ltd. Дата публикации: 2024-07-09.

Metalized fabric that dissipates and scatters infrared light and methods or making and using the same

Номер патента: US11905648B2. Автор: Carl Jones,David Curry,Jodi Wallis,Bennett Fisher,Dino Aimino,Thomas Dougal,Greg Gianforcaro. Владелец: NOBLE BIOMATERIALS Inc. Дата публикации: 2024-02-20.

Metalized fabric that dissipates and scatters infrared light and methods or making and using the same

Номер патента: US20240150957A1. Автор: Carl Jones,David Curry,Jodi Wallis,Bennett Fisher,Dino Aimino,Thomas Dougal,Greg Gianforcaro. Владелец: NOBLE BIOMATERIALS Inc. Дата публикации: 2024-05-09.

Pixel structure and detection method of promoting defect detection rate

Номер патента: US09523899B2. Автор: Zui Wang. Владелец: Shenzhen China Star Optoelectronics Technology Co Ltd. Дата публикации: 2016-12-20.

Fusers, printing apparatuses and methods, and methods of fusing toner on media

Номер патента: US20100119267A1. Автор: David P. Van Bortel,Brendan H. Williamson,Brian J. McNamee. Владелец: Xerox Corp. Дата публикации: 2010-05-13.

Method of the cutting tool and its structure and corresponding method of machining rotors

Номер патента: US12138718B1. Автор: Yu-Ren Wu. Владелец: National Central University. Дата публикации: 2024-11-12.

Cord stopper and methods for using and manufacturing the same

Номер патента: US12117066B2. Автор: David Roberts. Владелец: Individual. Дата публикации: 2024-10-15.

Pile with an extended head and working method of the same

Номер патента: US20060104722A1. Автор: Yoon-Yong Song. Владелец: Individual. Дата публикации: 2006-05-18.

Inspection apparatus and methods, methods of manufacturing devices

Номер патента: US09753379B2. Автор: Henricus Petrus Maria Pellemans,Patrick Warnaar,Amandev SINGH. Владелец: ASML Netherlands BV. Дата публикации: 2017-09-05.

Circuit board assembling structure, electronic device having the same and assembling method of electronic device

Номер патента: US09535463B2. Автор: Jui-Lin Yang. Владелец: Getac Technology Corp. Дата публикации: 2017-01-03.

Metal packaging liquid or aerosol jet coating compositions, coated substrates, packaging, and methods

Номер патента: US20240287316A1. Автор: Charles I. Skillman,Boxin Tang. Владелец: SWIMC LLC. Дата публикации: 2024-08-29.

Manufacturing method of partially cured composite components

Номер патента: US09776386B2. Автор: Cyrille Collart,Bernard Duprieu,Victor Garcia Solares,Pilar Munoz Lopez,Mar Zuarzo Ruiz,Betty Fantina Llorente. Владелец: AIRBUS OPERATIONS SL. Дата публикации: 2017-10-03.

Structures and formation methods of micro-electro mechanical system device

Номер патента: US09725301B2. Автор: Shang-Ying Tsai,Chia-Hua Chu,Chun-Wen Cheng,Chin-Wei Liang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-08-08.

Fabric conditioning compositions and method fot treatment of fabrics

Номер патента: HU0402114A2. Автор: David Stephen Grainger,Mansur Sultan Mohammadi,Llyr Glyndwr Griffiths,Jane Howard. Владелец: Unilever N.V.,. Дата публикации: 2005-01-28.

Apparatus and method for shrinking textiles (APPARATUS AND METHOD FOR SHRINKING OF FABRICS)

Номер патента: KR20200077524A. Автор: 알레산드로 주치. Владелец: 페라로 에스.피.에이.. Дата публикации: 2020-06-30.

Apparatus and method for production of fabrics

Номер патента: US6640591B1. Автор: Eugene Haban. Владелец: Individual. Дата публикации: 2003-11-04.

System and method for recursively iterating over a loosely associated data structure

Номер патента: US20170235795A1. Автор: David Gilder. Владелец: NetSuite Inc. Дата публикации: 2017-08-17.

System and method for securing objects on a wall

Номер патента: US20090159774A1. Автор: Mary McPhail Douglas,Geord Douglas. Владелец: Individual. Дата публикации: 2009-06-25.

Structural and Other Elements, and Methods of Making the Same (STRUCTURAL AND OTHER COMPONENTS, METHOD OF MANUFACTURE)

Номер патента: KR950702903A. Автор: 켄톤 브리텐 존. Владелец: 켄톤 브리텐 존. Дата публикации: 1995-08-23.

Device and method of implementing subpass interleaving of tiled image rendering

Номер патента: US20240104685A1. Автор: Michael John Livesley,Mika Tuomi,Ruijin Wu,Kiia Kallio,Jan H. Achrenius. Владелец: Advanced Micro Devices Inc. Дата публикации: 2024-03-28.

Memory array, memory structure and operation method of memory array

Номер патента: US11901004B2. Автор: Hon-Sum Philip Wong,Jin Cai,Meng-Fan Chang,Kerem Akarvardar,Rawan NAOUS,Win-San Khwa. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-02-13.

Memory array, memory structure and operation method of memory array

Номер патента: US20230326525A1. Автор: Hon-Sum Philip Wong,Jin Cai,Meng-Fan Chang,Kerem Akarvardar,Rawan NAOUS,Win-San Khwa. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-12.

Solidified soil, underwater structure foundation protection structure, and construction method

Номер патента: EP4345081A1. Автор: Xiao Wang,Tianxue ZHONG. Владелец: Jiangsu Kunze Technology Co Ltd. Дата публикации: 2024-04-03.

Seal structure and mounting method of belt cover for internal combustion engine

Номер патента: US20240209811A1. Автор: Osamu Yoda,Koichiro Asame. Владелец: Honda Motor Co Ltd. Дата публикации: 2024-06-27.

Lens shape measurement device and method, method of producing eyeglass lens, and method of producing eyeglasses

Номер патента: WO2008016066A1. Автор: Masaaki Inoguchi. Владелец: HOYA CORPORATION. Дата публикации: 2008-02-07.

Soil Removal System and Method, Method of Manufacture of the System, and Use of a Cleaning Wipe

Номер патента: DE102019006721A1. Автор: Julia Becker,Julia Christina Gwendolin Thomas. Владелец: Individual. Дата публикации: 2021-03-25.

Structure and fabrication method of flat panel display comprising address line with mending layer

Номер патента: US20020030184A1. Автор: Biing-Seng Wu. Владелец: Chi Mei Optoelectronics Corp. Дата публикации: 2002-03-14.

Inspection Apparatus and Methods, Methods of Manufacturing Devices

Номер патента: US20160011523A1. Автор: WARNAAR Patrick,Pellemans Henricus Petrus Maria,SINGH Amandev. Владелец: ASML Netherlands B.V.. Дата публикации: 2016-01-14.

Cement mortar composite with excellent flowability and workability, repair method of concrete structure, injection repair method for the concrete structure, surface treating method of the concrete structure and surface protection method of the concrete structure using the composite

Номер патента: KR101352903B1. Автор: 박승종. Владелец: 박승종. Дата публикации: 2014-01-17.

Cement mortar composite with excellent workability and water resistance, repair method of concrete structure, injection repair method for the concrete structure, surface treating method of the concrete structure and surface protection method of the concrete structure using the composite

Номер патента: KR102088407B1. Автор: 백성진,김남섭. Владелец: 백성진. Дата публикации: 2020-03-13.

Inspection apparatus and methods, methods of manufacturing devices

Номер патента: TWI572992B. Автор: 阿曼帝 席恩,漢瑞克 皮杜斯 瑪利亞 皮勒曼,派翠克 華那爾. Владелец: Ａｓｍｌ荷蘭公司. Дата публикации: 2017-03-01.

THERMOPHONIC INSULATION MODULE FOR AIRCRAFT COMPRISING A MATTRESS AND A BEARING STRUCTURE, AND THERMOPHONIC INSULATION METHOD OF AN AIRCRAFT BY MEANS OF SUCH A MODULE

Номер патента: FR3061130B1. Автор: Bernard Guering,Kergommeaux Matthieu De. Владелец: AIRBUS OPERATIONS SAS. Дата публикации: 2021-07-02.

A kind of tunnel segment structure and its construction method of the anti-floating of shield tunnel

Номер патента: CN109973116A. Автор: 唐亮,石强,赵策,赵香萍,乔国强,凌贤长,徐加飞,刘创印,孔祥勋,邓长飞,蒋言佳,姚前伟. Владелец: Second Engineering Co Ltd of China Railway 12th Bureau Group Co Ltd. Дата публикации: 2019-07-05.

The Branches cut only with the top of the structure and And molding method of the blade

Номер патента: KR101429386B1. Автор: 김용만. Владелец: 김용만. Дата публикации: 2014-08-12.

A kind of attachment structure and its construction method of caisson and partition wall

Номер патента: CN107795017A. Автор: 张剑,李志强,熊育明. Владелец: Changsha Broad Homes Industrial Group Co Ltd. Дата публикации: 2018-03-13.

A kind of weaving method of preceding crotch structure and its weaving method of Briefs

Номер патента: CN108796807B. Автор: 杨静. Владелец: Guangzhou Comfort Technology Co Ltd. Дата публикации: 2019-11-15.

A kind of buried canal case and pipe gallery soil arch load-relieving structure and its construction method of drainning off floodwaters

Номер патента: CN107119697A. Автор: 蔡剑波,欧键灵. Владелец: Guangzhou City Engineering Design Studies Total Institute. Дата публикации: 2017-09-01.

A kind of connection structure and the connection method of carbon fibre composite and dissimilar material

Номер патента: CN108547836A. Автор: 张宁,熊建民,张然然,苏畅,苏一畅,王方玉,李韶茂,沈长海. Владелец: Zhejiang Zhongtai Automobile Manufacturing Co Ltd. Дата публикации: 2018-09-18.

The model sheetinstallat structure and its construction method of the attractive joint of outer wall of basement

Номер патента: CN107119902A. Автор: 李波,王振宇,张宇翔,张志威,高轩. Владелец: China Construction Eighth Engineering Division Co Ltd. Дата публикации: 2017-09-01.

A kind of nano particle dimer of sandwich structure and the preparation method of polymer

Номер патента: CN110201590A. Автор: 张若虎,崔一平,朱利,李可欣,陆辉,苏靖婷. Владелец: SOUTHEAST UNIVERSITY. Дата публикации: 2019-09-06.

Supporting structure and loading-transporting method of storage and transport container

Номер патента: US20160081471A1. Автор: Huanghe QUAN,Yuliang QIAN. Владелец: Nantong CIMC Tank Equipment Co Ltd. Дата публикации: 2016-03-24.

A kind of the protection structure and its closure method of unconventional storage capacity corral sea wall list Longkou

Номер патента: CN108517835A. Автор: 朱芳芳,袁晨晨,王兴超,王雪华,苏铖,郭成超,房世龙,陆天琳,赵华强. Владелец: Nanjing Changjiang Waterway Engineering Bureau. Дата публикации: 2018-09-11.

The connecting structure and its construction method of a kind of prefabricated regeneration monolith beam

Номер патента: CN107143040A. Автор: 吴波,何国晖. Владелец: South China University of Technology SCUT. Дата публикации: 2017-09-08.

A kind of tower body structure and its welding method of marine worker crane

Номер патента: CN106829757B. Автор: 姬红斌,任攀. Владелец: Wuhan Marine Machinery Plant Co Ltd. Дата публикации: 2018-12-14.

Permanent underdrainage structure and permanent underdrainage method of construction of ground

Номер патента: KR100736631B1. Автор: 김창근. Владелец: 김창근. Дата публикации: 2007-07-06.

A kind of horizontal connection structure and its construction method of assembled energy consumption frame-shear wall

Номер патента: CN110241946A. Автор: 李超,张皓,李宏男,章磊珉. Владелец: Shenyang Jianzhu University. Дата публикации: 2019-09-17.

Permeability structure and the construction method of this for sand beach shore maintenance and littoral nourishment facilities

Номер патента: KR100750883B1. Автор: 홍길표. Владелец: 주식회사 한국항만기술단. Дата публикации: 2007-08-22.

Joint of steel structure and its manufacturing method of the outsourcing from closing in

Номер патента: CN109281924A. Автор: 谢振宁. Владелец: Guangxi Tianzheng Steel Structure Co Ltd. Дата публикации: 2019-01-29.

A kind of the underwater grouting formwork structure and its construction method of pole section increasing

Номер патента: CN106522234B. Автор: 张伟,梁国栋,李洪斌,陈锦铭,李汉渤. Владелец: No 2 Engineering Co of CCCC Fourth Harbor Engineering Co Ltd. Дата публикации: 2019-08-02.

Parasitic capacity and storage capacity structure and its manufacturing method of thin film transistor liquid crystal display

Номер патента: KR0163933B1. Автор: 김동규. Владелец: 김광호. Дата публикации: 1999-01-15.

A kind of the draining anti-slide pile structure and its construction method of " rice " type stake core

Номер патента: CN110453699A. Автор: 王俊杰,黄达,肖衡林,裴向军,罗世林,吴礼舟. Владелец: HEBEI UNIVERSITY OF TECHNOLOGY. Дата публикации: 2019-11-15.

For forming the thin plate layer of enhanced cellular structure and the preparation method of honeycomb

Номер патента: CN105291491B. Автор: 杨艳,黄静波. Владелец: Beijing Jinlunwode Technology Co ltd. Дата публикации: 2018-02-13.

The reparation structure and its construction method of a kind of hollow slab girder bridge floor system damage

Номер патента: CN108547222A. Автор: 姚丽君,苏庆田,方亚非,周偲,周如明. Владелец: Shanghai Shenji Traffic Science & Technology Co Ltd. Дата публикации: 2018-09-18.

A kind of mounting structure and its installation method of external wall thermal insulation/decoration integration board material

Номер патента: CN107489253A. Автор: 刘爱华,刘虎山. Владелец: Jiangsu And All Over World Energy-Conservation Science And Technology Ltd. Дата публикации: 2017-12-19.

The steel pipe of steel pipe structuring and the welding method of connector

Номер патента: CN108712941A. Автор: 中谷光良,山田顺也,谷和彦,成山达也,汤藤尚人. Владелец: Hitachi Zosen Corp. Дата публикации: 2018-10-26.

A kind of fixed structure and its construction method of the external labeling type waterstop for piping lane gap location

Номер патента: CN109235497A. Автор: 李志路. Владелец: China MCC17 Group Co Ltd. Дата публикации: 2019-01-18.

A kind of structure and its manufacturing method of gas flow sensor

Номер патента: CN105526983B. Автор: 王伟军,康晓旭. Владелец: Shanghai Integrated Circuit Research and Development Center Co Ltd. Дата публикации: 2019-01-18.

A kind of the assembled secondary liner structure and its construction method of bored tunnel

Номер патента: CN105484765B. Автор: 李冰,王恒,陈滔,张玉芳,李松梅,王伟锋,杜玉峰,金淮,郝志宏,罗富荣,童利红. Владелец: Beijing Rail And Transit Design & Research Institute Co ltd. Дата публикации: 2018-12-11.

Enhance the low-light grid optical cavity structure and its manufacturing method of the response of silicon detector near-infrared

Номер патента: CN109052312A. Автор: 郭培,李华高. Владелец: CETC 44 Research Institute. Дата публикации: 2018-12-21.

The attachment structure and its construction method of asphaltic concrete core wall and concrete pedestal

Номер патента: CN105484209B. Автор: 陆素洁. Владелец: PowerChina Huadong Engineering Corp Ltd. Дата публикации: 2017-10-27.

A kind of the composite sandwich plate attachment structure and its design method of new no metal connecting piece

Номер патента: CN105500867B. Автор: 陆晓峰,朱晓磊,刘路维,刘杨,曾卓. Владелец: NANJING TECH UNIVERSITY. Дата публикации: 2017-12-08.

The welding structure and its welding method of Nitinol and different metal materials

Номер патента: CN105397293B. Автор: 刘威,陈庆福. Владелец: Faersheng-Peiersi Material Sciene-Technology Co Ltd Jiangyin City. Дата публикации: 2017-10-20.

The finger binding structure and its construction method of a kind of suspension type rail beam

Номер патента: CN106894300A. Автор: 刘建国,陈艳,王�义,唐丽,姜友荣,周元,王永景,廖兴国. Владелец: China MCC5 Group Corp Ltd. Дата публикации: 2017-06-27.

Beam body bearing structure and integrated construction method of assembled wall formwork and beam

Номер патента: CN113818631A. Автор: 盛雄,盛博. Владелец: Chen Tai Guangde Intelligent Assembly Building Ltd By Share Ltd. Дата публикации: 2021-12-21.

A kind of leakage preventing structure and its construction method of deformed concrete crack

Номер патента: CN110130401A. Автор: 张晓晖,朱志勇,陈绪港,谢民燕,黄正卿. Владелец: GUANGZHOU CHEMICAL GROUTING ENGINEERING Co Ltd CHINESE ACADEMY OF SCIENCES. Дата публикации: 2019-08-16.

Installation module of trolley hoist for vessel or marine structure and the operating method of it

Номер патента: KR101973038B1. Автор: 김종윤,윤대호,함영창,김호형. Владелец: 대우조선해양 주식회사. Дата публикации: 2019-04-26.

The attachment structure and its construction method of prefabricated regeneration monolith plate and composite beam

Номер патента: CN107740522A. Автор: 吴波,聂良珍. Владелец: South China University of Technology SCUT. Дата публикации: 2018-02-27.

The molding structure and its forming method of a kind of valve blade

Номер патента: CN108246942A. Автор: 田齐芳,郑春霞. Владелец: JIANGSU HUADONG ZHENGDA AIR CONDITIONING EQUIPMENT CO Ltd. Дата публикации: 2018-07-06.

The three-dimensional cell structure and energy dissipating method of a kind of sluicing gravity dam energy dissipating

Номер патента: CN107044111A. Автор: 王薇,李传奇,肖学,王德振,马梦蝶,崔佳伟,宋苏林,段明印,荆倩婧,杨幸子. Владелец: Shandong University. Дата публикации: 2017-08-15.

A kind of space index structure and its building method of supporting collaborative process to inquire

Номер патента: CN108509550A. Автор: 王国军,张少波,张雪艳. Владелец: CENTRAL SOUTH UNIVERSITY. Дата публикации: 2018-09-07.

The precast assembly bridge pier anti-seismic structure and its construction method of built-in replaceable viscous damper and energy consumption reinforcing bar

Номер патента: CN107974933B. Автор: 曹晓波,戴建国,王文炜,郑宇宙,朱忠锋,宋元印,石劭阳. Владелец: SOUTHEAST UNIVERSITY. Дата публикации: 2019-07-23.

A kind of detachable bail structure and its application method of bid panel fixed on the wall

Номер патента: CN106969016A. Автор: 欧阳刚. Владелец: Chongqing Industry Polytechnic College. Дата публикации: 2017-07-21.

A kind of server radiating noise-reduction fan structure and fan failure method of testing

Номер патента: CN107299919A. Автор: 翟文琼. Владелец: Zhengzhou Yunhai Information Technology Co Ltd. Дата публикации: 2017-10-27.

The well formula rib frame laminated floor slab structure and its construction method of the built-in anti-suspension positioning device of light plastid

Номер патента: CN106968377B. Автор: 刘波,陈建伟,闫文赏,车文鹏. Владелец: Hebei Shi Feng Green Construction Technology Development Co Ltd. Дата публикации: 2019-03-19.

The silo structure and its construction method of prestressed steel structure and Combined concrete

Номер патента: CN105625787B. Автор: 张国军,王明珠,高向前,王树,葛家琪,张曼生. Владелец: China Aviation Planning and Design Institute Group Co Ltd. Дата публикации: 2017-11-17.

A kind of welding structure and its welding method of steel bridge Beam Plate Elements ribbed stiffener end

Номер патента: CN108526741A. Автор: 张宏伟,裴雪峰,田刚毅. Владелец: China Railway Baoji Bridge Group Co Ltd. Дата публикации: 2018-09-14.

Column body bearing structure and integrated construction method of assembled wall formwork and column

Номер патента: CN113802768B. Автор: 盛雄,盛博. Владелец: Chen Tai Guangde Intelligent Assembly Building Ltd By Share Ltd. Дата публикации: 2023-03-14.

The transition runner structure and its design method of a kind of centrifugal multistage pump multiple centrifugal pump

Номер патента: CN107035720A. Автор: 张涛,吴应德,马柏青,杨德旭,马文生,王民祥. Владелец: Lanzhou Lan Pump Co Ltd. Дата публикации: 2017-08-11.

The fast joint structure and its using method of angle valve and pipeline

Номер патента: CN104676064B. Автор: 李章生,宋健毅. Владелец: Xiamen Runner Industrial Corp. Дата публикации: 2017-03-08.

Net twisting structure and net twisting method of simple and efficient gabion net machine

Номер патента: CN110788257A. Автор: 张锡堂. Владелец: Jiangyin Jin Lida Light Industrial Machinery Co Ltd. Дата публикации: 2020-02-14.

A kind of local mounting structure and its installation method of Hard Roll keel

Номер патента: CN110499874A. Автор: 张叶超. Владелец: Zhengzhou Dashan Architectural Design And Research Institute Co Ltd. Дата публикации: 2019-11-26.

the improvement structure and this formation method of the oscillation work outlet facilitating the input of the propulsion pipe

Номер патента: KR20230047673A. Автор: 조광래. Владелец: 주식회사 아이언몰. Дата публикации: 2023-04-10.

A kind of the set lever structure and its operating method of bench drill

Номер патента: CN108994347A. Автор: 周进,沈铖. Владелец: Gaoyou Xinshun Machinery Manufacturing Co ltd. Дата публикации: 2018-12-14.

VEHICLE BODY FRONT STRUCTURE AND IMPACT ABSORBING METHOD OF VEHICLE BODY FRONT STRUCTURE

Номер патента: US20190118863A1. Автор: Kobayashi Akira,Kobayashi Hirokazu,Yasui Ken,Takeda Tomoya,Sato Yasuhito,HARA Yukiyasu,ARIMA Tetsuhiro,IKEYA Akihiro,HIGUCHI Eisei. Владелец: HONDA MOTOR CO., LTD.. Дата публикации: 2019-04-25.

The supporting structure and its construction method of heat distribution pipeline in pipe gallery

Номер патента: CN106704708B. Автор: 曾毅,侯振华,郭鹏杰,林明钊,周立朋. Владелец: China State Construction Technology Beijing Co Ltd. Дата публикации: 2018-09-18.

Block for public works having a multiple coupling structure and carrying out method of using it

Номер патента: KR100317471B1. Автор: 한남수. Владелец: 한남수. Дата публикации: 2001-12-22.

Using the waterproof spray-up structure and its construction method of impervious gunite concrete

Номер патента: CN107916945A. Автор: 李�荣,罗朝廷,阳大福,罗小能. Владелец: China Railway Yanfeng Chendu Science and Technology Co Ltd. Дата публикации: 2018-04-17.

The middle point part continuous structure and the continuous method of prestressed concrete girder bridge

Номер патента: KR100566653B1. Автор: 노옥근,노실근,노윤근. Владелец: 우경건설 주식회사. Дата публикации: 2006-03-31.

Color filter structure and its manufacturing method of lcd device

Номер патента: KR100254870B1. Автор: 박재용,김웅권,임경남. Владелец: 론 위라하디락사. Дата публикации: 2000-05-01.

The mounting tool structure and its installation method of electric equipment products control assembly

Номер патента: CN107984207B. Автор: 茅忠群,诸永定,胡金伟,杨勇光,李立波. Владелец: Ningbo Fotile Kitchen Ware Co Ltd. Дата публикации: 2019-06-25.

The connection structure and its manufacturing method of wind turbine blade

Номер патента: CN109476099A. Автор: F·瑟伦森,J·霍内曼. Владелец: Paddle Blade Technology Center. Дата публикации: 2019-03-15.

Control the combination retaining structure and its construction method of biased deformation

Номер патента: CN107034905A. Автор: 高金龙,刘旭东,李建华,夏海军,徐建宁,尚武孝,雍金柱,曾凡福,文小永,谭学敏. Владелец: Xiamen Construction Engineering Co Ltd of of China Railway First Engineering Group Co Ltd. Дата публикации: 2017-08-11.

Clothes with constant temperature refrigeration structure and temperature control method of clothes

Номер патента: CN105876917A. Автор: 王金玲,佟奇,杨奕斌. Владелец: Shenzhen Renben Fashion Co Ltd. Дата публикации: 2016-08-24.

Vibration welding structure and vibration welding method of resin molded product

Номер патента: JP5377932B2. Автор: 修也 上瀧. Владелец: Daikyo Nishikawa Corp. Дата публикации: 2013-12-25.

Functional mortar composition for repairing-reinforcing concrete structure and repairing-reinforcing method of concrete structure

Номер патента: KR101936062B1. Автор: 김미정. Владелец: 주식회사 대호영이엔씨. Дата публикации: 2019-04-03.

Steel plate structure and the construction method of tunnel using the same

Номер патента: KR100890666B1. Автор: 허한구. Владелец: 허한구. Дата публикации: 2009-03-26.

Diaphragm valve structure and thermal isolation method of the diaphragm valve

Номер патента: KR102326810B1. Автор: 후안-잔 치엔,포-웬 첸,후안-치아오 홍. Владелец: 부에노 테크놀러지 코., 엘티디.. Дата публикации: 2021-11-16.

For protecting the subway station water sealing structure and its construction method of groundwater environment

Номер патента: CN105909260B. Автор: 张莉莉,韩琳,孙斌,何瑞,赵振华,李常锁,秦品瑞,胡克祯,武法伟,柳浩然,马雪莹. Владелец: Shandong Provincial Institute Of Geological And Mineral Engineering Investigation. Дата публикации: 2019-01-01.

Gasification furnace with explosion-proof enclosure structure and active protection method of coal gasification furnace

Номер патента: CN108587686B. Автор: 李伟,王庆,李卫民,赖波,李彦君,苟伟,汪映标,吴晓军,宋晓勇. Владелец: Vitalong Fire Safety Group Co Ltd. Дата публикации: 2020-08-28.

A Wine Coffee Bean With a Core-Shell Structure and A Preparing Method Of The Same

Номер патента: KR101882590B1. Автор: 김도현,이지은. Владелец: 이지은. Дата публикации: 2018-07-26.

Three-dimensional porous structures and the manufacturing method of the same

Номер патента: KR102497406B1. Автор: 박형호,김태희,강건욱,이규형,유상혁,최하령. Владелец: 연세대학교 산학협력단. Дата публикации: 2023-02-08.

Change desert soil structure and the chemical method of ecological environment

Номер патента: CN107237314A. Автор: 卢明全. Владелец: Dalian Jiuding Xiangrui Special Engineering Technology Research Institute Co Ltd. Дата публикации: 2017-10-10.

The underpinning structure and underpinning construction method of existing building base isolation reinforcement

Номер патента: CN107795144A. Автор: 李小敏,鲁风勇. Владелец: Nanjing 100 Seath Construction Technology Co Ltd. Дата публикации: 2018-03-13.

Three dimension box-type precast concrete elevation structure and the construction method of building using the same

Номер патента: KR102304405B1. Автор: 유광준. Владелец: (주)지산개발. Дата публикации: 2021-09-23.

Transparent ceramic structure and surface treatment method of the same

Номер патента: US20060093738A1. Автор: Yung-Jen Lin,Jung-Chang Hu,Chien-Ming Tseng,Hsuan-Peng Lin,Chih-Chao Hsu. Владелец: National Chung Shan Institute of Science and Technology NCSIST. Дата публикации: 2006-05-04.

Ceiling mounting structure and accurate mounting method of keel system thereof

Номер патента: CN112267610B. Автор: 张丽红. Владелец: Beijing Huayi Construction Group Co ltd. Дата публикации: 2021-10-26.

The anti-freeze expansion structure and its paving method of seasonal frozen soil region roadbed

Номер патента: CN108193575A. Автор: 张昆. Владелец: Individual. Дата публикации: 2018-06-22.

Fixation structure and the establishment method of screen door pillar

Номер патента: KR100802592B1. Автор: 김복만. Владелец: 김복만. Дата публикации: 2008-02-18.

The recyclable foundation structure and its construction method of container-type building

Номер патента: CN110206051A. Автор: 张斌,王亚军,孙皓,田强,张庆昱,谢荣岭,张洁洁. Владелец: Zhongjian Integrated House Co Ltd. Дата публикации: 2019-09-06.

One kind obtains β+O duplex structures and improves Ti2The method of AlNb alloy rigidities

Номер патента: CN106868328A. Автор: 蔡奇,刘永长,马宗青,李梦晨,王祖敏. Владелец: TIANJIN UNIVERSITY. Дата публикации: 2017-06-20.

Security kernel structure and security operation method of satellite-borne computer software

Номер патента: CN110673975A. Автор: 张国柱,陈浩,徐晨,方圆,王向,詹鹏宇. Владелец: SHANGHAI AEROSPACE CONTROL TECHNOLOGY INSTITUTE. Дата публикации: 2020-01-10.

Liner protection angle structure and pipe winding method of freezer liner

Номер патента: CN104482709B. Автор: 张朝辉. Владелец: Hefei Hualing Co Ltd. Дата публикации: 2017-01-25.

Data storage structure and data storage method of unstructured grid

Номер патента: CN112015735A. Автор: 凌空. Владелец: Xi'an Shufeng Information Technology Co ltd. Дата публикации: 2020-12-01.

Layout determination method, structure and stamping manufacturing method of composite shape sheet

Номер патента: CN106570224A. Автор: 张文涛,朱亮,彭永前,韦衍杰,周晓舟. Владелец: Dongfeng Motor Corp. Дата публикации: 2017-04-19.

Welding Structure and the welding method of being undertaken by electric resistance welding

Номер патента: CN102569709B. Автор: 河原敬二,小野濑伸,藤本浩,长谷川坚太. Владелец: HITACHI AUTOMOTIVE SYSTEMS LTD. Дата публикации: 2015-11-18.

Probe installation structure and probe installation method of steam turbine generator

Номер патента: CN111520199B. Автор: 李刚,黄滔,徐锋,何静,邓兴宏,欧希桥. Владелец: CGN Power Co Ltd. Дата публикации: 2022-10-18.

Semi-finished complete denture based on preformed dentition structure and rapid manufacturing method of complete denture

Номер патента: CN112618074A. Автор: 吴洋,吴瑛,张存莉,刘改丽,吴庚林. Владелец: Individual. Дата публикации: 2021-04-09.

A Sandwich plate comprising truss-structure and A manufacturing method of the same

Номер патента: KR20150014561A. Автор: 이정환,김세종,최정호. Владелец: 한국기계연구원. Дата публикации: 2015-02-09.

The template structure and its construction method of prefabricated subsection structure

Номер патента: CN106795701B. Автор: 李大龙. Владелец: Posco Co Ltd. Дата публикации: 2019-01-15.

The reinforced structure and its manufacture method of crash helmet

Номер патента: CN104413991B. Автор: 何昌宪. Владелец: Individual. Дата публикации: 2017-09-05.

The joint structure and its manufacturing method of cycle frame

Номер патента: CN108357614A. Автор: 罗际威,张智凱,辛旭斌,赖宏杰. Владелец: Giant Manufacturing Co Ltd. Дата публикации: 2018-08-03.

Coil structure and coil winding method of electrofusion type specials tube

Номер патента: KR102070825B1. Автор: 신영석. Владелец: 신영석. Дата публикации: 2020-01-29.

Radar apparatus including time-division iq structure and the operating method of the radar apparatus

Номер патента: KR102081148B1. Автор: 김병철,김병성,최승운,박세경. Владелец: 주식회사 바이다. Дата публикации: 2020-02-25.

The pier bottom structure and its assembly method of single track bridge pier, single track bridge pier

Номер патента: CN108411771A. Автор: 张崇斌,魏宇,杨喜文,徐升桥,任为东. Владелец: China Railway Engineering Consulting Group Co Ltd. Дата публикации: 2018-08-17.

Suitable for the rock foundation structure and its construction method of transmission line construction

Номер патента: CN106836261A. Автор: 王宇坤,宋浩然,聂厚勇,束峻峰,符骏. Владелец: Wuhu Power Supply Co of State Grid Anhui Electric Power Co Ltd. Дата публикации: 2017-06-13.

Improve structure and the manufacture method of perforation unit top surface property

Номер патента: CN106077097A. Автор: 张晖,李晓忠,王宏权,栗海峰,高瑞全,张东须,尹锡泉,陈廷俊. Владелец: Tianjin Pipe Group Corp. Дата публикации: 2016-11-09.

The mounting structure and its installation method of inclined curtain wall

Номер патента: CN110258876A. Автор: 李伟,陈刚,李黎,王军杰,魏高,吕永进,王显博,周良朋,孟天甫,肖传坤. Владелец: China Construction Eighth Engineering Division Co Ltd. Дата публикации: 2019-09-20.

Re-inforced shock resistant resin structure and its relative method of manufacture

Номер патента: PT70984B. Автор: . Владелец: Nava Pier Luigi. Дата публикации: 1981-11-02.

Circuit topological structure and operation control method of cooperative direct current power flow controller

Номер патента: CN107612011B. Автор: 朱淼,蔡旭,徐莉婷,钟旭. Владелец: Shanghai Jiaotong University. Дата публикации: 2021-08-03.

COOKED SHELL STRUCTURE AND THE PRODUCTION METHOD OF IT

Номер патента: TR201713297A2. Автор: Çoban Erdoğan. Владелец: Soelen Cikolata Gida Sanayi Ve Ticaret Anonim Sirketi. Дата публикации: 2019-03-21.

Modular space frame support system, work platform system and methods of erecting the same

Номер патента: CA3091511A1. Автор: Paul Jolicoeur,Mathieu Grumberg,Scott Tomlinson,Roy T. Scrafford,Alana MARTALOCK,Jerry DOLLY,Jonathan BURKHART. Владелец: Safway Services LLC. Дата публикации: 2019-07-25.

Systems and methods of testing memory devices

Номер патента: US12079152B2. Автор: Chia-En HUANG,Meng-Han LIN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Interconnect structure using through wafer vias and method of fabrication

Номер патента: WO2008042304A3. Автор: John S Foster,Kimon Rybnicek,Paul J Rubel,Steven H Hovey. Владелец: Steven H Hovey. Дата публикации: 2008-06-26.

MEMS pressure sensor and microphone devices having through-vias and methods of forming same

Номер патента: US09469527B2. Автор: Chia-Hua Chu,Chun-Wen Cheng. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-18.

Structure and method for embedding capacitors in Z-connected multi-chip modules

Номер патента: US20030089936A1. Автор: Mark McCormack,Mike Peters. Владелец: Individual. Дата публикации: 2003-05-15.

Blade spar of aerodynamic model of propeller and method of its manufacture

Номер патента: RU2652545C1. Автор: Владимир Алексеевич Козлов,Юрий Юрьевич Евдокимов,Сергей Владимирович Ходунов,Александр Викторович Усов,Антон Анатольевич Горский,Иван Владимирович Трифонов,Сергей Юрьевич Козырев. Владелец: Федеральное государственное унитарное предприятие "Центральный аэрогидродинамический институт имени профессора Н.Е. Жуковского" (ФГУП "ЦАГИ"). Дата публикации: 2018-04-26.

Connecting element of hollow hermetic product of integral structure and method of its manufacturing

Номер патента: RU2702564C1. Автор: Вячеслав Максимович Бушуев,Михаил Владимирович Никитин. Владелец: Михаил Владимирович Никитин. Дата публикации: 2019-10-08.

Modular semi-submerged structure and method of its fabrication

Номер патента: RU2558165C2. Автор: Роберто ГОНАН. Владелец: Финкантьери С.П.А.. Дата публикации: 2015-07-27.

Photonic Semiconductor Device and Method of Manufacture

Номер патента: US20230280558A1. Автор: Chen-Hua Yu,Chung-Shi Liu,Hao-Yi Tsai,Hung-Yi Kuo,Tsung-Yuan Yu,Cheng-chieh Hsieh,Chung-Ming Weng,Hua-Kuei Lin,Che-Hsiang Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-07.

Edge couplers including a rounded region adjacent to an opening in the interconnect structure

Номер патента: US11774686B2. Автор: Yusheng Bian,Edward Kiewra,Robert K. Leidy,Abdelsalam Aboketaf,Brett Cucci. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-10-03.

Composite bridge deck structural panel and method of fabrication

Номер патента: US20190106848A1. Автор: Scott Lewit,Ronnal P. Reichard. Владелец: Composites Intellectual Holdings Inc. Дата публикации: 2019-04-11.

Composite structural panel and method of fabrication

Номер патента: US20230279624A1. Автор: Scott Lewit,Ronnal P. Reichard. Владелец: Composites Intellectual Holdings Inc. Дата публикации: 2023-09-07.

Composite structural panel and method of fabrication

Номер патента: US12129611B2. Автор: Scott Lewit,Ronnal P. Reichard. Владелец: Composites Intellectual Holdings Inc. Дата публикации: 2024-10-29.

Z-axis test coupon structure and method for additive manufacturing process

Номер патента: US09689783B2. Автор: Michael W. Hayes,David M. Dietrich. Владелец: Boeing Co. Дата публикации: 2017-06-27.

Multi-core optical fiber interconnection structure and method for manufacturing multi-core optical fiber interconnection structure

Номер патента: US09568688B2. Автор: Eisuke Sasaoka. Владелец: Sumitomo Electric Industries Ltd. Дата публикации: 2017-02-14.

Disposable underwear with solution of continuity and methods of production

Номер патента: RU2336064C2. Автор: Юнг Х. ХУАНГ,ГОМПЕЛЬ Пол Т. ВАН,Расселл Е. ТОРСОН,Кеннет Дж. ВАГНЕР,Джин Ф. НИМАЙЕР,Джудит А. МЬЮЗИЛ,Хайди К. ВУДИ,Бриджет А. БЭЛОГ,Синди МААС,Джером Стив ВЕЙТ. Владелец: Кимберли-Кларк Ворлдвайд, Инк.. Дата публикации: 2008-10-20.

Flex circuit with dual sided interconnect structure

Номер патента: WO2013163409A1. Автор: Bradley J. Ver Meer,Ravishankar A. SHIVARAMA. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2013-10-31.

Method of fabricating three-dimensional structure and method of manufacturing substrate with spacer

Номер патента: US20090244126A1. Автор: Kazuaki Okamori. Владелец: Fujifilm Corp. Дата публикации: 2009-10-01.

ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE

Номер патента: US20120001267A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001308A1. Автор: FUKUTANI Keita,NISHIHATA Masayoshi,Mamitsu Kuniaki,Ookura Yasushi,Wado Hiroyuki,Sugiura Syun. Владелец: Denso Corporation. Дата публикации: 2012-01-05.

Frame of rapidly erected structure and method of its assembly

Номер патента: RU2449093C2. Автор: Борис Григорьевич Мухин. Владелец: Борис Григорьевич Мухин. Дата публикации: 2012-04-27.

MANUFACTURING METHOD OF ENERGY STORAGE DEVICE

Номер патента: US20120003383A1. Автор: . Владелец: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.. Дата публикации: 2012-01-05.

Apparatus and method for manufacture of fabric-like pile products

Номер патента: CA859686A. Автор: H. Erb George. Владелец: Velcro SA. Дата публикации: 1970-12-29.

Porous rubber shock-absorber with set stiffness, method of stiffness adjustment of porous rubber shock-absorbers, and method of manufacturing of porous rubber shock-absorbers with set stiffness

Номер патента: RU2552746C2. Автор: Владимир Дмитриевич Ленкин,Валерий Геннадьевич Климов. Владелец: ООО "ПКТИтрансстрой". Дата публикации: 2015-06-10.

Target to receive functional coatings and method of its manufacturing

Номер патента: RU2569293C1. Автор: Евгений Александрович Левашов,Юрий Сергеевич Погожев,Артем Юрьевич Потанин,Наталия Владимировна Швындина,Александр Валентинович Новиков. Владелец: Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС". Дата публикации: 2015-11-20.

Non-joint structure and its construction method of connection between structural walls with beams, columns, and floor decks in steel reinforced concrete (SRC) construction

Номер патента: TW419556B. Автор: Jin-Huei Shiau. Владелец: Shiau Jin Huei. Дата публикации: 2001-01-21.

The structure and its manufacturing method of the foamed shoe body and peripheral decorative bar as a whole-piece structure

Номер патента: TW401279B. Автор: Jeng-Shian Ji. Владелец: Ji Jeng Shian. Дата публикации: 2000-08-11.

Organic electroluminescent display apparatus, organic electroluminescent display panel, and pixel structure and pixel driving method of the organic electroluminescent display panel

Номер патента: TW200949797A. Автор: Hong-Ru Guo,Yu-Wen Chiou,Seok-Woon Lee. Владелец: Chi Mei El Corp. Дата публикации: 2009-12-01.

Transparent ceramic structure and surface treatment method of the same

Номер патента: TW200606126A. Автор: Yung-Jen Lin,Jung-Chang Hu,Chien-Ming Tseng,Hsuan-Peng Lin,Chih-Chao Hsu. Владелец: Chung Shan Inst Of Science. Дата публикации: 2006-02-16.

A structure and a pointing method of a wireless infrared sensor device

Номер патента: TW201232558A. Автор: Hong-Fa Ho,Chung-Yung HO,Chung-Chen HO. Владелец: Chung-Chen HO. Дата публикации: 2012-08-01.

Gate spacer structure and the manufacturing method of the same

Номер патента: TW434790B. Автор: Da-Cheng Lin,Ji-Shiang Liou,Jiun-Ji Shr. Владелец: United Semiconductor Corp. Дата публикации: 2001-05-16.

Structure and the manufacturing method of metal buttons

Номер патента: TW374698B. Автор: TONG Zheng. Владелец: TONG Zheng. Дата публикации: 1999-11-21.

Transparent ceramic structure and surface treatment method of the same

Номер патента: TWI256382B. Автор: Yung-Jen Lin,Jung-Chang Hu,Chien-Ming Tseng,Hsuan-Peng Lin,Chih-Chao Hsu. Владелец: Chung Shan Inst Of Science. Дата публикации: 2006-06-11.

A kind of attachment structure and its production method of pressure gauge adapter of plastic and bourdon tube

Номер патента: CN105136382B. Автор: 童纪国,高威定. Владелец: CIXI HUADONG PRESSURE GAUGE Co Ltd. Дата публикации: 2018-01-30.

A kind of based on the microcontroller of CISC structure and the implementation method of instruction set thereof

Номер патента: CN100545804C. Автор: 张文,朱建国,刘艳军,黄继颇,赵启山,贺理. Владелец: Shanghai Hair Group Integated Circuit Co Ltd. Дата публикации: 2009-09-30.

The sapphire fiber grating temperature of a kind of U-shape structure and the preparation method of strain gauge

Номер патента: CN103674085B. Автор: 谢阳,王军利,魏志义,朱江峰,贺博荣. Владелец: Xidian University. Дата публикации: 2016-08-17.

The charge share-type pixel structure and its driving method of a kind of bilateral scanning

Номер патента: CN104537989B. Автор: 周刘飞. Владелец: Nanjing CEC Panda LCD Technology Co Ltd. Дата публикации: 2017-06-13.

Method of installing RFID tag for quality control on concrete structure and quality control method of concrete structure

Номер патента: JP5889725B2. Автор: 貢一 佐藤,佐藤　貢一,成弘 坂本,さやか 五十嵐. Владелец: Taisei Corp. Дата публикации: 2016-03-22.

Splitting and assembling structure and assembling connecting method of assembled type concrete frame-shear wall

Номер патента: CN102900168B. Автор: 赵唯坚. Владелец: Shenyang Jianzhu University. Дата публикации: 2014-08-20.

The transmitting coil structure and its winding method of a kind of high quality factor

Номер патента: CN105845404B. Автор: 钟霞. Владелец: Ningbo Wei E Electronic Science And Technology Co Ltd. Дата публикации: 2017-12-12.

The transformer arrangement structure and its winding method of a kind of tertiary winding corner connection

Номер патента: CN107633942A. Автор: 许平,赵静,王晖,马志凯,廖金木. Владелец: TBEA Shenyang Transformer Group Co Ltd. Дата публикации: 2018-01-26.

Shaft sealing structure and shaft sealing method of roots blower for vacuum evaporator, and vacuum evaporation apparatus

Номер патента: JP5670072B2. Автор: 松下　哲也,哲也 松下,西村　靖史,靖史 西村,悟 平野,平野　悟,向田　民人,民人 向田. Владелец: Sasakura Engineering Co Ltd. Дата публикации: 2015-02-18.

Concrete structure, manufacturing method of concrete structure, and deterioration diagnosis method of concrete structure

Номер патента: JP6808354B2. Автор: 山本　貴士,貴士 山本. Владелец: MBS Corp. Дата публикации: 2021-01-06.

A kind of weighing structure and gravity detection method of rail traffic platform safety tread

Номер патента: CN105035096B. Автор: 赵忠,史和平. Владелец: SHANGHAI JIACHENG RAILWAY TRANSPORTATION SAFETY SYSTEM CO Ltd. Дата публикации: 2019-02-19.

A kind of Suspension hook structure and its construction method of later stage supplement

Номер патента: CN107605924A. Автор: 董俊,赵星,朱炎兵,雷崇. Владелец: China Railway Siyuan Survey and Design Group Co Ltd. Дата публикации: 2018-01-19.

A kind of expansion joint structure and its construction method of connecting plate-abutment parados combination

Номер патента: CN109853376A. Автор: 陈宝春,薛俊青,黄福云,林健辉,布鲁诺.布里斯杰拉. Владелец: FUZHOU UNIVERSITY. Дата публикации: 2019-06-07.

A kind of aeration structure and its installation method of elevator

Номер патента: CN109911744A. Автор: 刘东风,余兵,孟祥立. Владелец: Beijing Huanyu Elevator Engineering Co Ltd. Дата публикации: 2019-06-21.

A structure and a processing method of system with multi-beam and micro-beamforming

Номер патента: TWI706641B. Автор: 劉建宏,郭富彥. Владелец: 奔騰智慧生醫股份有限公司. Дата публикации: 2020-10-01.

It is a kind of for reconstructing the electric control structure and its reconstructing method of liquid metal

Номер патента: CN109950686A. Автор: 朱晓华,褚慧,李静锴. Владелец: Nanjing University of Science and Technology. Дата публикации: 2019-06-28.

The mesa structure and its assemble method of a kind of washing machine, dish-washing machine

Номер патента: CN107604599A. Автор: 蒲杰,姜战存,包自超,解婷. Владелец: Qingdao Haier Dishwasher Co Ltd. Дата публикации: 2018-01-19.

A kind of the tunnel bottom structure and its construction method of anti-pucking disaster

Номер патента: CN109736855A. Автор: 陈斌,汪泓,李涛涛,刘镐,金镖,左宇军,邬忠虎,孙文吉斌,郑禄璟,万入祯,伍兴维. Владелец: GUIZHOU UNIVERSITY. Дата публикации: 2019-05-10.

STRUCTURE AND PATTERN FORMING METHOD OF TRANSPARENT CONDUCTIVE CIRCUIT

Номер патента: US20120261172A1. Автор: . Владелец: . Дата публикации: 2012-10-18.

Structure and pull-down method of sub-barge

Номер патента: JPS5587688A. Автор: Yoshiyuki Yuzuriha,Yasusuke Okamoto. Владелец: Mitsui Engineering and Shipbuilding Co Ltd. Дата публикации: 1980-07-02.

Rotor structure and its manufacturing method of multistage axial flow rotary machine

Номер патента: JPS5471207A. Автор: Norio Matsumura. Владелец: Kawasaki Heavy Industries Ltd. Дата публикации: 1979-06-07.

Colored multilayer film structure and film coating method of same

Номер патента: CN102211437A. Автор: 陈杰良,王仲培,魏朝沧,洪新钦. Владелец: Hongfujin Precision Industry Shenzhen Co Ltd. Дата публикации: 2011-10-12.

Heat dissipation structure and heat dissipation method of LED module

Номер патента: CN103956358A. Автор: 杨华,王军喜,李晋闽,王国宏,李璟,伊晓燕,郑怀文,卢鹏志. Владелец: Institute of Semiconductors of CAS. Дата публикации: 2014-07-30.

Temperature-control cooling system for large-size concrete structure and cooling control method of temperature-control cooling system

Номер патента: CN104234431A. Автор: 伍小平,焦常科,李鑫奎,顾海欢. Владелец: Shanghai Construction Group Co Ltd. Дата публикации: 2014-12-24.

Anti-fouling device for underwater structure and electrochemical control method of organism

Номер патента: JPH11244861A. Автор: Tadashi Matsunaga,是 松永,Tsuruo Nakayama,Hitoshi Wake,仁志 和気,鶴雄 中山,欣一 小澤,Kinichi Ozawa,Tokuyuki Nakamura,徳幸 中村. Владелец: Pentel Co Ltd. Дата публикации: 1999-09-14.

Improve epitaxial structure and the growing method of wavelength concentration in GaN base epitaxial wafer

Номер патента: CN103337571B. Автор: 李刚,牛勇,杨奎,郭丽彬,蒋利民,吴礼清. Владелец: Hefei Irico Epilight Technology Co Ltd. Дата публикации: 2016-08-10.

Contact structure and contact formation method of semiconductor device

Номер патента: KR960026179A. Автор: 황준. Владелец: 현대전자산업 주식회사. Дата публикации: 1996-07-22.

Lens frame structure and optical centering method of lens frame

Номер патента: JP3996709B2. Автор: 和行 岩佐. Владелец: Olympus Corp. Дата публикации: 2007-10-24.

Load-bearing structure and load-bearing method of wooden buildings

Номер патента: JP6962681B2. Автор: 芳英 春城,俊彦 松. Владелец: 俊彦 松. Дата публикации: 2021-11-05.

Cutting structure and injection molding method of water gap in die

Номер патента: CN102744839B. Автор: 陈剑英,陈剑洪,黄木文,方红灯,金清华. Владелец: ZHUHAI YINGHAO ELECTRONICS TECHNOLOGY Co Ltd. Дата публикации: 2015-04-15.

Binary channels fetron reduces structure and the manufacture method of pinch-off voltage

Номер патента: CN103094319B. Автор: 宁开明. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Дата публикации: 2015-10-14.

Labor-saving track structure on soil structure, and settlement repair method of labor-saving track on soil structure

Номер патента: JPH11269801A. Автор: Takeshi Takahashi,武 高橋,Takahiro Sugano,忠良 石橋,貴浩 菅野,Tadayoshi Ishibashi,Yorio Yonekura,Hideyuki Iizuka,英之 飯塚,頼夫 米倉. Владелец: JR East Consultants Co. Дата публикации: 1999-10-05.

Prefabricated shear wall, building structure and the construction method of the building structure

Номер патента: CN109779090A. Автор: 王宁,王庆华,方园,孙占琦,王洪欣. Владелец: China Construction Science and Technology Co Ltd Shenzhen Branch. Дата публикации: 2019-05-21.

There is semiconductor structure and its formation method of stress protection structure

Номер патента: CN103378028B. Автор: 陈逸男,刘献文,徐文吉,叶绍文. Владелец: Nanya Technology Corp. Дата публикации: 2016-01-13.

The sealant sealing assembling structure and glue encapsulation method of auto electronic element

Номер патента: CN104319266B. Автор: 何元飞,程捷. Владелец: United Automotive Electronic Systems Co Ltd. Дата публикации: 2017-12-12.

The mounting structure and its separation method of tool, seal assembly

Номер патента: CN107642608A. Автор: 李飞飞. Владелец: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP LTD. Дата публикации: 2018-01-30.

Refrigerator illumination structure and assembly positioning method of refrigerator illumination structure

Номер патента: CN104101174A. Автор: 贺亚涛. Владелец: Suzhou Samsung Electronics Co Ltd. Дата публикации: 2014-10-15.

The damping foundation structure and its construction method of equipment

Номер патента: CN105064392B. Автор: 毛兴平. Владелец: China 19th Metallurgical Corp. Дата публикации: 2017-05-31.

Antenna structure and the manufacture method of antenna structure

Номер патента: CN106486764A. Автор: 吴子民,许渊钦. Владелец: Qiji Polytron Technologies Inc. Дата публикации: 2017-03-08.

Cushion block assembly structure for jacking structure and jacking implementation method of cushion block assembly structure

Номер патента: CN103194985A. Автор: 李方元,闫兴非,吴培峰. Владелец: Shanghai Urban Construction Design Research Institute Co ltd. Дата публикации: 2013-07-10.

Elastic joint structure and elastic joining method of box concrete block

Номер патента: JP4223430B2. Автор: 修 長谷川,幸美 荻野,利幸 辻. Владелец: ジオスター株式会社. Дата публикации: 2009-02-12.

Leadframe with pin holding structure and pin holding method of leadframe

Номер патента: JPS63258051A. Автор: Tetsuya Hojo,徹也 北城. Владелец: Fuji Plant Kogyo Kk. Дата публикации: 1988-10-25.

Based on field emission cathode structure and the manufacture method of sea urchin type nickel particles template

Номер патента: CN103198991B. Автор: 张永爱,郭太良,周雄图,张典,胡海龙,李福山,叶芸,杨尊先. Владелец: FUZHOU UNIVERSITY. Дата публикации: 2015-10-14.

The test structure and its manufacture method of flush memory device

Номер патента: CN104465618B. Автор: 柳会雄,刘良,高学,周志美. Владелец: Semiconductor Manufacturing International Shanghai Corp. Дата публикации: 2017-10-27.

Gas seal structure and gas seal method of vibratory mixer

Номер патента: CN105202197A. Автор: 刘云飞,高阳,林亮亮,王新亚,李晨光,赵悟,田建涛,武甜,董晨希,吕兴坤,曹鑫鑫,蒋文志. Владелец: Changan University. Дата публикации: 2015-12-30.

Scour prevention structure and scour prevention method of pier structure

Номер патента: JP2023097274A. Автор: Masanori Nakai,正則 中井,Norihiro Nishimura,宏春 谷田部,Hiroharu Yatabe,駆 渡辺,Kakeru Watanabe,孝之 中林,Takayuki Nakabayashi,規宏 西村. Владелец: Tokyo Kyuei Co Ltd. Дата публикации: 2023-07-07.

Structure and press molding method of eight-layered print circuit board

Номер патента: TW448710B. Автор: Yu-Chiang Jeng. Владелец: Mitac Int Corp. Дата публикации: 2001-08-01.

GATE STRUCTURES AND METHOD OF FABRICATING SAME

Номер патента: US20120001266A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AND METHOD OF MANUFACTURING SAME

Номер патента: US20120001238A1. Автор: Ouyang Hui,Fan Wei-Han,Tsai Ming-Huan,Cheng Chun-Fai. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

Alignment Mark and Method of Formation

Номер патента: US20120001337A1. Автор: Yu Chen-Hua,Lin Jing-Cheng,Jeng Shin-Puu,Chiou Wen-Chih,Wu Weng-Jin,Chen Chia-Ho,Tsai Fang Wen,Tsai Chen-Yu,Wang Shih-Hui,Chiu Chien-Ming. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

Semiconductor Device and Method of Forming Compliant Stress Relief Buffer Around Large Array WLCSP

Номер патента: US20120001325A1. Автор: Shim Il Kwon,Chow Seng Guan,Lin Yaojian. Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2012-01-05.

METHOD OF FABRICATING AN INTEGRATED CIRCUIT DEVICE

Номер патента: US20120003806A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

Structure and Process for the Formation of TSVs

Номер патента: US20120001334A1. Автор: Kuo Chen-Cheng,Ching Kai-Ming,Chen-Shien Chen. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

Semiconductor Package and Method of Forming Similar Structure for Top and Bottom Bonding Pads

Номер патента: US20120001326A1. Автор: . Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2012-01-05.

MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

Номер патента: US20120001150A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

RESISTIVE RAM DEVICES AND METHODS

Номер патента: US20120001144A1. Автор: . Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

ETCHANTS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME

Номер патента: US20120001264A1. Автор: YANG Jun-Kyu,Kim Hong-Suk,Hwang Ki-Hyun,Ahn Jae-Young,Lim Hun-Hyeong,KIM Jin-Gyun. Владелец: . Дата публикации: 2012-01-05.

Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays

Номер патента: US20120001147A1. Автор: . Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

APPARATUS INTEGRATING MICROELECTROMECHANICAL SYSTEM DEVICE WITH CIRCUIT CHIP AND METHODS FOR FABRICATING THE SAME

Номер патента: US20120001276A1. Автор: . Владелец: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE. Дата публикации: 2012-01-05.

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003815A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

Method of fabrication of apparatus for air cooling of gas, method of fabrication of apparatus heat exchanger section (versions), method of fabrication of apparatus chamber for gas inlet or outlet, method of hydraulic pressure testing of apparatus heat exchanger section and method of hydraulic pressure testing of apparatus manifold for gas supply and removal

Номер патента: RU2364811C2. Автор: Николай Павлович Селиванов. Владелец: Николай Павлович Селиванов. Дата публикации: 2009-08-20.

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003808A1. Автор: Lee Sang-yun. Владелец: BESANG INC.. Дата публикации: 2012-01-05.

CMOS Image Sensor Including PNP Triple Layer And Method Of Fabricating The CMOS Image Sensor

Номер патента: US20120001241A1. Автор: Park Won-je. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

ION-SENSING CHARGE-ACCUMULATION CIRCUITS AND METHODS

Номер патента: US20120000274A1. Автор: Fife Keith. Владелец: LIFE TECHNOLOGIES CORPORATION. Дата публикации: 2012-01-05.

METHOD OF REDUCING EROSION OF A METAL CAP LAYER DURING VIA PATTERNING IN SEMICONDUCTOR DEVICES

Номер патента: US20120003832A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

METHODS OF FORMING NANOSCALE FLOATING GATE

Номер патента: US20120001248A1. Автор: Sandhu Gurtej S.,Ramaswamy D.V. Nirmal. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-01-05.

THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120001345A1. Автор: Hwang Kihyun,YANG Junkyu,Choi Hanmei,Park ChanJin,Min Gyungjin,Yoo Dongchul,Kong Yoochul. Владелец: . Дата публикации: 2012-01-05.

CONNECTION AND ALIGNMENT DETECTION SYSTEMS AND METHODS

Номер патента: US20120004602A1. Автор: HANSON Ian B.,Bente,IV Paul F.. Владелец: . Дата публикации: 2012-01-05.

METHOD OF PRODUCING SEMICONDUCTOR DEVICE

Номер патента: US20120003841A1. Автор: . Владелец: ULVAC, INC.. Дата публикации: 2012-01-05.

THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME

Номер патента: US20120001190A1. Автор: Yaneda Takeshi,Aita Tetsuya,Harumoto Yoshiyuki,Inoue Tsuyoshi,OKABE Tohru. Владелец: SHARP KABUSHIKI KAISHA. Дата публикации: 2012-01-05.

METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND FABRICATION SYSTEM OF SEMICONDUCTOR DEVICE

Номер патента: US20120003761A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

RINSE ADDED AMINOSILICONE CONTAINING COMPOSITIONS AND METHODS OF USING SAME

Номер патента: US20120004156A1. Автор: Vetter Kerry Andrew,Panandiker Rajan Keshav,"ONeil Julie Ann",VETTER Nicholas David. Владелец: . Дата публикации: 2012-01-05.

COMPOSITE PRESSURE VESSEL AND METHOD OF ASSEMBLING THE SAME

Номер патента: US20120000916A1. Автор: Kleber Richard M.,Kia Hamid G.,Wang Chen-Shih,Carsley John E.,Berger Elisabeth J.,SUN Ce,Schultheis Valentin,Fell Stephan. Владелец: GM GLOBAL TECHNOLOGY OPERATIONS, INC.. Дата публикации: 2012-01-05.

WAFER STACKED PACKAGE WAVING BERTICAL HEAT EMISSION PATH AND METHOD OF FABRICATING THE SAME

Номер патента: US20120001348A1. Автор: . Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2012-01-05.

Systems and Methods for the Collection, Retention, and Redistribution of Rainwater and Methods of Construction of the Same

Номер патента: US20120000546A1. Автор: . Владелец: . Дата публикации: 2012-01-05.

INSULATING LAYER, ORGANIC THIN FILM TRANSISTOR USING THE INSULATING LAYER, AND METHOD OF FABRICATING THE ORGANIC THIN FILM TRANSISTOR

Номер патента: US20120001159A1. Автор: KANG Seung Youl,Baek Kyu Ha,Yoon Sung Min,Suh Kyung Soo,KIM Gi Heon,YOU In Kyu,AHN Seong Deok. Владелец: Electronics and Telecommunications Research Institute. Дата публикации: 2012-01-05.

QUANTUM DOT SENSITIZED WIDE BANDGAP SEMICONDUCTOR PHOTOVOLTAIC DEVICES & METHODS OF FABRICATING SAME

Номер патента: US20120003773A1. Автор: Harkness,IV Samuel D.,Richter Hans J.. Владелец: SEAGATE TECHNOLOGY LLC. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20120003805A1. Автор: Lee Tae-Jung,PARK MYOUNG-KYU,Bang Kee-In. Владелец: . Дата публикации: 2012-01-05.

METHOD OF FABRICATING AN ELECTROCHEMICAL DEVICE USING ULTRAFAST PULSED LASER DEPOSITION

Номер патента: US20120003395A1. Автор: CHE Yong,HU Zhendong. Владелец: IMRA AMERICA, INC.. Дата публикации: 2012-01-05.

ANODE-SUPPORTED SOLID OXIDE FUEL CELL COMPRISING A NANOPOROUS LAYER HAVING A PORE GRADIENT STRUCTURE, AND A PRODUCTION METHOD THEREFOR

Номер патента: US20120003565A1. Автор: Lee Jong Ho,KIM Jong Cheol,LEE Hae-Weon,SON Ji-Won,KIM Hae-Ryoung,Noh Ho-Sung. Владелец: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY. Дата публикации: 2012-01-05.

LIGHT EMITTING DIODE HAVING A THERMAL CONDUCTIVE SUBSTRATE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120003766A1. Автор: . Владелец: Seoul Opto Device Co., Ltd.. Дата публикации: 2012-01-05.

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120001329A1. Автор: Kim Young Lyong,Lee Jongho,AHN EUNCHUL,Kim Hyeongseob. Владелец: Samsung Electronics Co., Ltd. Дата публикации: 2012-01-05.

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Номер патента: US20120001333A1. Автор: HWANG Chang Youn. Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-01-05.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.