Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure
Номер патента: EP3688815A1
Опубликовано: 05-08-2020
Автор(ы): Daniel H. Morris, Ian A. Young, Joshua M. HOWARD, Seiyon Kim, Uygar E. Avci
Принадлежит: Intel Corp
Опубликовано: 05-08-2020
Автор(ы): Daniel H. Morris, Ian A. Young, Joshua M. HOWARD, Seiyon Kim, Uygar E. Avci
Принадлежит: Intel Corp
Реферат: Field effect transistors having a ferroelectric or antiferroelectric gate dielectric structure are described. In an example, an integrated circuit structure includes a semiconductor channel structure includes a monocrystalline material. A gate dielectric is over the semiconductor channel structure. The gate dielectric includes a ferroelectric or antiferroelectric polycrystalline material layer. A gate electrode has a conductive layer on the ferroelectric or antiferroelectric polycrystalline material layer, the conductive layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side of the gate electrode opposite the first side.
A method of fabricating a field effect short channel transistor having less length fluctuation by using an amorphous electrode material during implantation
Номер патента: DE102009006801B4. Автор: Sven Beyer,Thilo Scheiper,Andy Wei. Владелец: AMD Fab 36 LLC and Co KG. Дата публикации: 2011-05-19.