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Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

Номер патента: US09786785B2
Опубликовано: 10-10-2017
Автор(ы): Chul-Woong Lee, Ho-Sung Son, Ji-Hye Yi, Kook-Tae KIM, Seok-jun Won, Young-Tak Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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